DE69613266T2 - Leseverfahren eines ferroelektrischen Speichers unter Verwendung von unterschiedlichen Lese- und Schreibespannungen - Google Patents

Leseverfahren eines ferroelektrischen Speichers unter Verwendung von unterschiedlichen Lese- und Schreibespannungen

Info

Publication number
DE69613266T2
DE69613266T2 DE69613266T DE69613266T DE69613266T2 DE 69613266 T2 DE69613266 T2 DE 69613266T2 DE 69613266 T DE69613266 T DE 69613266T DE 69613266 T DE69613266 T DE 69613266T DE 69613266 T2 DE69613266 T2 DE 69613266T2
Authority
DE
Germany
Prior art keywords
ferroelectric memory
reading method
memory reading
different read
write voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69613266T
Other languages
English (en)
Other versions
DE69613266D1 (de
Inventor
Manooch Golabi
Rodney A Ruesch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ramtron International Corp
Original Assignee
Ramtron International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ramtron International Corp filed Critical Ramtron International Corp
Application granted granted Critical
Publication of DE69613266D1 publication Critical patent/DE69613266D1/de
Publication of DE69613266T2 publication Critical patent/DE69613266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
DE69613266T 1995-03-29 1996-03-12 Leseverfahren eines ferroelektrischen Speichers unter Verwendung von unterschiedlichen Lese- und Schreibespannungen Expired - Fee Related DE69613266T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/413,083 US5532953A (en) 1995-03-29 1995-03-29 Ferroelectric memory sensing method using distinct read and write voltages

Publications (2)

Publication Number Publication Date
DE69613266D1 DE69613266D1 (de) 2001-07-19
DE69613266T2 true DE69613266T2 (de) 2001-09-20

Family

ID=23635749

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613266T Expired - Fee Related DE69613266T2 (de) 1995-03-29 1996-03-12 Leseverfahren eines ferroelektrischen Speichers unter Verwendung von unterschiedlichen Lese- und Schreibespannungen

Country Status (4)

Country Link
US (1) US5532953A (de)
EP (1) EP0735541B1 (de)
JP (1) JP3200009B2 (de)
DE (1) DE69613266T2 (de)

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KR100333153B1 (ko) * 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
TW322578B (de) * 1996-03-18 1997-12-11 Matsushita Electron Co Ltd
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
KR100206713B1 (ko) * 1996-10-09 1999-07-01 윤종용 강유전체 메모리 장치에서의 비파괴적 억세싱 방법 및 그 억세싱 회로
KR100248355B1 (ko) * 1997-04-09 2000-03-15 김영환 반도체 메모리 소자의 가변 비교전압 발생장치
US6118688A (en) * 1997-06-05 2000-09-12 Matsushita Electronics Corporation Ferroelectric memory device and method for driving it
JP3877336B2 (ja) * 1997-06-27 2007-02-07 松下電器産業株式会社 強誘電体メモリ装置及びその駆動方法
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100252052B1 (ko) * 1997-12-03 2000-04-15 윤종용 셀 테스트 패턴을 사용하여 강유전체 기억소자의 특성을 평가하는 방법
US6157979A (en) * 1998-03-14 2000-12-05 Advanced Technology Materials, Inc. Programmable controlling device with non-volatile ferroelectric state-machines for restarting processor when power is restored with execution states retained in said non-volatile state-machines on power down
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6219270B1 (en) * 1999-05-24 2001-04-17 U.S. Philips Corporation Integrated circuit having dynamic memory with boosted plateline
JP2001093286A (ja) * 1999-09-21 2001-04-06 Nec Corp 強誘電体記憶装置及びその製造方法
JP3916837B2 (ja) * 2000-03-10 2007-05-23 株式会社東芝 強誘電体メモリ
KR100382546B1 (ko) * 2000-12-04 2003-05-09 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한 불량셀검출방법
JP2002269972A (ja) * 2000-12-27 2002-09-20 Seiko Epson Corp 強誘電体メモリ装置および強誘電体キャパシタからなるメモリセルに対する動作方法
US6430093B1 (en) 2001-05-24 2002-08-06 Ramtron International Corporation CMOS boosting circuit utilizing ferroelectric capacitors
US6535446B2 (en) 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP3650077B2 (ja) * 2002-03-29 2005-05-18 沖電気工業株式会社 半導体記憶装置
US6741504B2 (en) * 2002-07-19 2004-05-25 Micron Technology, Inc. Method and apparatus for reducing gate-induced diode leakage in semiconductor devices
KR100469153B1 (ko) * 2002-08-30 2005-02-02 주식회사 하이닉스반도체 강유전체 메모리 장치
KR100492800B1 (ko) * 2002-11-12 2005-06-07 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 제어 장치
JP2004220705A (ja) * 2003-01-15 2004-08-05 Seiko Epson Corp 強誘電体記憶装置
JP4041054B2 (ja) * 2003-11-06 2008-01-30 株式会社東芝 半導体集積回路装置
JP4511377B2 (ja) * 2005-01-28 2010-07-28 パナソニック株式会社 強誘電体記憶装置
JP4667888B2 (ja) * 2005-02-01 2011-04-13 パナソニック株式会社 半導体記憶装置
KR100694406B1 (ko) * 2005-04-21 2007-03-12 주식회사 하이닉스반도체 불량 셀 처리 회로를 포함하는 불휘발성 강유전체 메모리장치 및 제어 방법
US7609559B2 (en) * 2007-01-12 2009-10-27 Micron Technology, Inc. Word line drivers having a low pass filter circuit in non-volatile memory device
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US8842460B2 (en) 2012-11-26 2014-09-23 Cypress Semiconductor Corporation Method for improving data retention in a 2T/2C ferroelectric memory
US9361972B1 (en) * 2015-03-20 2016-06-07 Intel Corporation Charge level maintenance in a memory
US9697882B1 (en) * 2016-08-30 2017-07-04 Radiant Technologies, Inc. Analog ferroelectric memory with improved temperature range

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270967A (en) * 1991-01-16 1993-12-14 National Semiconductor Corporation Refreshing ferroelectric capacitors
FR2688090B1 (fr) * 1992-02-27 1994-04-08 Commissariat A Energie Atomique Cellule memoire non volatile du type metal-ferroelectrique semi-conducteur.
US5309391A (en) * 1992-10-02 1994-05-03 National Semiconductor Corporation Symmetrical polarization enhancement in a ferroelectric memory cell

Also Published As

Publication number Publication date
EP0735541A2 (de) 1996-10-02
EP0735541B1 (de) 2001-06-13
JP3200009B2 (ja) 2001-08-20
JPH08273375A (ja) 1996-10-18
EP0735541A3 (de) 1998-07-22
DE69613266D1 (de) 2001-07-19
US5532953A (en) 1996-07-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee