EP0617363B1
(de)
|
1989-04-13 |
2000-01-26 |
SanDisk Corporation |
Austausch von fehlerhaften Speicherzellen einer EEprommatritze
|
US5430859A
(en)
*
|
1991-07-26 |
1995-07-04 |
Sundisk Corporation |
Solid state memory system including plural memory chips and a serialized bus
|
US5673417A
(en)
*
|
1995-07-20 |
1997-09-30 |
Inventec Corporation |
Electronic organizer with a flash memory and associated data archiving
|
JP3941149B2
(ja)
*
|
1996-12-03 |
2007-07-04 |
ソニー株式会社 |
半導体不揮発性記憶装置
|
KR100200922B1
(ko)
*
|
1995-12-27 |
1999-06-15 |
윤종용 |
반도체 메모리장치의 펌핑전압발생기
|
US5890192A
(en)
|
1996-11-05 |
1999-03-30 |
Sandisk Corporation |
Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
|
JP3411186B2
(ja)
*
|
1997-06-06 |
2003-05-26 |
シャープ株式会社 |
不揮発性半導体記憶装置
|
DE19731954C2
(de)
*
|
1997-07-24 |
2000-08-24 |
Bosch Gmbh Robert |
Verfahren zur Erkennung von fehlprogrammierten Speicherzellen eines Speichers
|
US5930167A
(en)
*
|
1997-07-30 |
1999-07-27 |
Sandisk Corporation |
Multi-state non-volatile flash memory capable of being its own two state write cache
|
TW337607B
(en)
|
1997-08-06 |
1998-08-01 |
Mos Electronics Taiwan Inc |
Process for forming a contact hole in an EEPROM with NOR construction
|
US6040216A
(en)
*
|
1997-08-11 |
2000-03-21 |
Mosel Vitelic, Inc. |
Method (and device) for producing tunnel silicon oxynitride layer
|
US6000006A
(en)
*
|
1997-08-25 |
1999-12-07 |
Bit Microsystems, Inc. |
Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
|
JPH11176158A
(ja)
*
|
1997-12-10 |
1999-07-02 |
Fujitsu Ltd |
ラッチ回路、データ出力回路及びこれを有する半導体装置
|
TW425660B
(en)
*
|
1997-12-12 |
2001-03-11 |
Mosel Vitelic Inc |
Method of forming uniform dielectric layer between two conductive layers in integrated circuit
|
TW374939B
(en)
|
1997-12-19 |
1999-11-21 |
Promos Technologies Inc |
Method of formation of 2 gate oxide layers of different thickness in an IC
|
KR100266748B1
(ko)
*
|
1997-12-31 |
2000-10-02 |
윤종용 |
반도체 메모리 장치 및 그 장치의 에러 정정 방법
|
TW382801B
(en)
|
1998-02-25 |
2000-02-21 |
Mosel Vitelic Inc |
Method of forming two transistors having different threshold voltage in integrated circuit
|
TW480713B
(en)
*
|
1998-03-03 |
2002-03-21 |
Mosel Vitelic Inc |
Method for forming different thickness of field oxide in integrated circuit and the structure of the same
|
US6136653A
(en)
*
|
1998-05-11 |
2000-10-24 |
Mosel Vitelic, Inc. |
Method and device for producing undercut gate for flash memory
|
US6261903B1
(en)
|
1998-05-14 |
2001-07-17 |
Mosel Vitelic, Inc. |
Floating gate method and device
|
US6365455B1
(en)
|
1998-06-05 |
2002-04-02 |
Mosel Vitelic, Inc. |
Flash memory process using polysilicon spacers
|
KR20010053128A
(ko)
*
|
1998-06-24 |
2001-06-25 |
인피니언 테크놀로지스 아게 |
전자 테스트 메모리 장치
|
JP3999900B2
(ja)
|
1998-09-10 |
2007-10-31 |
株式会社東芝 |
不揮発性半導体メモリ
|
US6088268A
(en)
*
|
1998-09-17 |
2000-07-11 |
Atmel Corporation |
Flash memory array with internal refresh
|
JP4074029B2
(ja)
|
1999-06-28 |
2008-04-09 |
株式会社東芝 |
フラッシュメモリ
|
FR2798767B1
(fr)
*
|
1999-09-16 |
2001-12-14 |
St Microelectronics Sa |
Procede d'ecriture en mode page d'une memoire non volatile electriquement programmable/effacable et architecture correspondante
|
FR2802012B1
(fr)
*
|
1999-12-07 |
2002-02-15 |
St Microelectronics Sa |
Memoire dram rapide
|
US6728913B1
(en)
*
|
2000-02-25 |
2004-04-27 |
Advanced Micro Devices, Inc. |
Data recycling in memory
|
US6731538B2
(en)
*
|
2000-03-10 |
2004-05-04 |
Kabushiki Kaisha Toshiba |
Semiconductor memory device including page latch circuit
|
JP2001297038A
(ja)
|
2000-04-11 |
2001-10-26 |
Toshiba Corp |
データ記憶装置および記録媒体並びに記録媒体制御方法
|
US6950336B2
(en)
*
|
2000-05-03 |
2005-09-27 |
Emosyn America, Inc. |
Method and apparatus for emulating an electrically erasable programmable read only memory (EEPROM) using non-volatile floating gate memory cells
|
US6400603B1
(en)
|
2000-05-03 |
2002-06-04 |
Advanced Technology Materials, Inc. |
Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
|
FR2809222A1
(fr)
*
|
2000-05-17 |
2001-11-23 |
St Microelectronics Sa |
Memoire eeprom comprenant un systeme de correction d'erreur
|
DE60129294D1
(de)
*
|
2001-02-19 |
2007-08-23 |
St Microelectronics Srl |
Verfahren zur Auffrischung der gespeicherten Daten in einem elektrisch lösch- und programmierbaren nichtflüchtigen Speicher
|
JP4530562B2
(ja)
*
|
2001-03-27 |
2010-08-25 |
ローム株式会社 |
不揮発性メモリ
|
US6717847B2
(en)
*
|
2001-09-17 |
2004-04-06 |
Sandisk Corporation |
Selective operation of a multi-state non-volatile memory system in a binary mode
|
US6456528B1
(en)
|
2001-09-17 |
2002-09-24 |
Sandisk Corporation |
Selective operation of a multi-state non-volatile memory system in a binary mode
|
US6683817B2
(en)
|
2002-02-21 |
2004-01-27 |
Qualcomm, Incorporated |
Direct memory swapping between NAND flash and SRAM with error correction coding
|
US6751127B1
(en)
|
2002-04-24 |
2004-06-15 |
Macronix International, Co. Ltd. |
Systems and methods for refreshing non-volatile memory
|
US6633500B1
(en)
|
2002-04-26 |
2003-10-14 |
Macronix International Co., Ltd. |
Systems and methods for refreshing a non-volatile memory using a token
|
JP4257824B2
(ja)
*
|
2002-07-03 |
2009-04-22 |
シャープ株式会社 |
半導体記憶装置
|
US7061792B1
(en)
*
|
2002-08-10 |
2006-06-13 |
National Semiconductor Corporation |
Low AC power SRAM architecture
|
US20040153902A1
(en)
*
|
2003-01-21 |
2004-08-05 |
Nexflash Technologies, Inc. |
Serial flash integrated circuit having error detection and correction
|
US6996688B2
(en)
*
|
2003-03-11 |
2006-02-07 |
International Business Machines Corporation |
Method, system, and program for improved throughput in remote mirroring systems
|
CN1311366C
(zh)
*
|
2003-05-22 |
2007-04-18 |
群联电子股份有限公司 |
快闪存储器的平行双轨使用方法
|
DE60322387D1
(de)
*
|
2003-08-27 |
2008-09-04 |
Advanced Risc Mach Ltd |
Vorrichtung und Verfahren zur Verwaltung von Transaktionen zum Schreiben und Lesen auf EEPROM-Speicher oder Flash-Speicher
|
US7640370B1
(en)
*
|
2003-11-25 |
2009-12-29 |
Marvell International Ltd. |
Method and apparatus for controlling data transfer between EEPROM and a physical layer device
|
US7173863B2
(en)
*
|
2004-03-08 |
2007-02-06 |
Sandisk Corporation |
Flash controller cache architecture
|
US7099221B2
(en)
|
2004-05-06 |
2006-08-29 |
Micron Technology, Inc. |
Memory controller method and system compensating for memory cell data losses
|
JP4135680B2
(ja)
*
|
2004-05-31 |
2008-08-20 |
ソニー株式会社 |
半導体記憶装置および信号処理システム
|
US20060010339A1
(en)
*
|
2004-06-24 |
2006-01-12 |
Klein Dean A |
Memory system and method having selective ECC during low power refresh
|
US7340668B2
(en)
*
|
2004-06-25 |
2008-03-04 |
Micron Technology, Inc. |
Low power cost-effective ECC memory system and method
|
US7116602B2
(en)
|
2004-07-15 |
2006-10-03 |
Micron Technology, Inc. |
Method and system for controlling refresh to avoid memory cell data losses
|
US6965537B1
(en)
|
2004-08-31 |
2005-11-15 |
Micron Technology, Inc. |
Memory system and method using ECC to achieve low power refresh
|
US7882299B2
(en)
*
|
2004-12-21 |
2011-02-01 |
Sandisk Corporation |
System and method for use of on-chip non-volatile memory write cache
|
US7212440B2
(en)
*
|
2004-12-30 |
2007-05-01 |
Sandisk Corporation |
On-chip data grouping and alignment
|
TWI263229B
(en)
*
|
2005-03-17 |
2006-10-01 |
Sunplus Technology Co Ltd |
Memory device with interface for serial transmission and error correction method for serial transmission interface
|
KR100680473B1
(ko)
*
|
2005-04-11 |
2007-02-08 |
주식회사 하이닉스반도체 |
액세스 시간이 감소된 플래시 메모리 장치
|
JP4761910B2
(ja)
*
|
2005-10-05 |
2011-08-31 |
株式会社東芝 |
不揮発性半導体記憶装置及びそれを用いた不揮発性メモリシステム
|
JP4910360B2
(ja)
*
|
2005-10-20 |
2012-04-04 |
ソニー株式会社 |
記憶装置、コンピュータシステム、およびデータ書き込み方法
|
US7447096B2
(en)
*
|
2006-05-05 |
2008-11-04 |
Honeywell International Inc. |
Method for refreshing a non-volatile memory
|
US7471562B2
(en)
*
|
2006-05-08 |
2008-12-30 |
Macronix International Co., Ltd. |
Method and apparatus for accessing nonvolatile memory with read error by changing read reference
|
US8077516B2
(en)
*
|
2006-05-08 |
2011-12-13 |
Macronix International Co., Ltd. |
Method and apparatus for accessing memory with read error by changing comparison
|
US7773421B2
(en)
*
|
2006-05-08 |
2010-08-10 |
Macronix International Co., Ltd. |
Method and apparatus for accessing memory with read error by changing comparison
|
US8997255B2
(en)
|
2006-07-31 |
2015-03-31 |
Inside Secure |
Verifying data integrity in a data storage device
|
US7567461B2
(en)
|
2006-08-18 |
2009-07-28 |
Micron Technology, Inc. |
Method and system for minimizing number of programming pulses used to program rows of non-volatile memory cells
|
US8352752B2
(en)
*
|
2006-09-01 |
2013-01-08 |
Inside Secure |
Detecting radiation-based attacks
|
US7894289B2
(en)
|
2006-10-11 |
2011-02-22 |
Micron Technology, Inc. |
Memory system and method using partial ECC to achieve low power refresh and fast access to data
|
US7900120B2
(en)
|
2006-10-18 |
2011-03-01 |
Micron Technology, Inc. |
Memory system and method using ECC with flag bit to identify modified data
|
WO2008068706A1
(en)
*
|
2006-12-07 |
2008-06-12 |
Nxp B.V. |
Method and device for reconfiguration of reliability data in flash eeprom storage pages
|
JP5018074B2
(ja)
*
|
2006-12-22 |
2012-09-05 |
富士通セミコンダクター株式会社 |
メモリ装置,メモリコントローラ及びメモリシステム
|
KR100819102B1
(ko)
|
2007-02-06 |
2008-04-03 |
삼성전자주식회사 |
개선된 멀티 페이지 프로그램 동작을 갖는 불휘발성 반도체메모리 장치
|
KR100914265B1
(ko)
*
|
2007-05-10 |
2009-08-27 |
삼성전자주식회사 |
비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 읽기 방법
|
KR100888482B1
(ko)
|
2007-05-11 |
2009-03-12 |
삼성전자주식회사 |
비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법
|
KR101472797B1
(ko)
*
|
2007-07-16 |
2014-12-15 |
삼성전자주식회사 |
데이터를 읽거나 쓰기 위한 방법 및 장치
|
KR101425957B1
(ko)
*
|
2007-08-21 |
2014-08-06 |
삼성전자주식회사 |
이씨씨 제어 회로 및 그것을 포함하는 멀티채널 메모리시스템
|
JP2009104757A
(ja)
*
|
2007-10-02 |
2009-05-14 |
Panasonic Corp |
半導体記憶装置
|
JP5049733B2
(ja)
*
|
2007-10-17 |
2012-10-17 |
株式会社東芝 |
情報処理システム
|
US8959307B1
(en)
|
2007-11-16 |
2015-02-17 |
Bitmicro Networks, Inc. |
Reduced latency memory read transactions in storage devices
|
US8762620B2
(en)
|
2007-12-27 |
2014-06-24 |
Sandisk Enterprise Ip Llc |
Multiprocessor storage controller
|
KR101483190B1
(ko)
*
|
2008-09-05 |
2015-01-19 |
삼성전자주식회사 |
메모리 시스템 및 그것의 데이터 처리 방법
|
EP2267724A1
(de)
*
|
2009-06-26 |
2010-12-29 |
STMicroelectronics Rousset SAS |
EEPROM Speicher-Architektur optimiert für eingebettete Speicher
|
US8665601B1
(en)
|
2009-09-04 |
2014-03-04 |
Bitmicro Networks, Inc. |
Solid state drive with improved enclosure assembly
|
US9135190B1
(en)
|
2009-09-04 |
2015-09-15 |
Bitmicro Networks, Inc. |
Multi-profile memory controller for computing devices
|
US8447908B2
(en)
|
2009-09-07 |
2013-05-21 |
Bitmicro Networks, Inc. |
Multilevel memory bus system for solid-state mass storage
|
US8560804B2
(en)
|
2009-09-14 |
2013-10-15 |
Bitmicro Networks, Inc. |
Reducing erase cycles in an electronic storage device that uses at least one erase-limited memory device
|
JP5549956B2
(ja)
|
2009-12-02 |
2014-07-16 |
マイクロン テクノロジー, インク. |
不揮発性メモリ用のリフレッシュアーキテクチャおよびアルゴリズム
|
US20120246384A1
(en)
*
|
2011-03-21 |
2012-09-27 |
Winbond Electronics Corp. |
Flash memory and flash memory accessing method
|
CN102339644B
(zh)
*
|
2011-07-27 |
2014-12-24 |
聚辰半导体(上海)有限公司 |
存储器及其操作方法
|
US9372755B1
(en)
|
2011-10-05 |
2016-06-21 |
Bitmicro Networks, Inc. |
Adaptive power cycle sequences for data recovery
|
US9058289B2
(en)
*
|
2011-11-07 |
2015-06-16 |
Sandisk Enterprise Ip Llc |
Soft information generation for memory systems
|
EP2608036A1
(de)
*
|
2011-12-22 |
2013-06-26 |
Thomson Licensing |
Verfahren und System zum Verwalten der Fehlererkennung und -korrektur
|
US9043669B1
(en)
|
2012-05-18 |
2015-05-26 |
Bitmicro Networks, Inc. |
Distributed ECC engine for storage media
|
CN102768859A
(zh)
*
|
2012-07-12 |
2012-11-07 |
深圳市锐能微科技有限公司 |
一种eeprom擦写控制装置
|
US9699263B1
(en)
|
2012-08-17 |
2017-07-04 |
Sandisk Technologies Llc. |
Automatic read and write acceleration of data accessed by virtual machines
|
JP5853906B2
(ja)
*
|
2012-08-24 |
2016-02-09 |
ソニー株式会社 |
記憶制御装置、記憶装置、情報処理システムおよび記憶制御方法
|
US9123401B2
(en)
*
|
2012-10-15 |
2015-09-01 |
Silicon Storage Technology, Inc. |
Non-volatile memory array and method of using same for fractional word programming
|
US9472284B2
(en)
|
2012-11-19 |
2016-10-18 |
Silicon Storage Technology, Inc. |
Three-dimensional flash memory system
|
US9501398B2
(en)
|
2012-12-26 |
2016-11-22 |
Sandisk Technologies Llc |
Persistent storage device with NVRAM for staging writes
|
US9239751B1
(en)
|
2012-12-27 |
2016-01-19 |
Sandisk Enterprise Ip Llc |
Compressing data from multiple reads for error control management in memory systems
|
US9612948B2
(en)
|
2012-12-27 |
2017-04-04 |
Sandisk Technologies Llc |
Reads and writes between a contiguous data block and noncontiguous sets of logical address blocks in a persistent storage device
|
US9454420B1
(en)
|
2012-12-31 |
2016-09-27 |
Sandisk Technologies Llc |
Method and system of reading threshold voltage equalization
|
US9003264B1
(en)
|
2012-12-31 |
2015-04-07 |
Sandisk Enterprise Ip Llc |
Systems, methods, and devices for multi-dimensional flash RAID data protection
|
US9870830B1
(en)
|
2013-03-14 |
2018-01-16 |
Sandisk Technologies Llc |
Optimal multilevel sensing for reading data from a storage medium
|
US9423457B2
(en)
|
2013-03-14 |
2016-08-23 |
Bitmicro Networks, Inc. |
Self-test solution for delay locked loops
|
US9842024B1
(en)
|
2013-03-15 |
2017-12-12 |
Bitmicro Networks, Inc. |
Flash electronic disk with RAID controller
|
US9136877B1
(en)
|
2013-03-15 |
2015-09-15 |
Sandisk Enterprise Ip Llc |
Syndrome layered decoding for LDPC codes
|
US9400617B2
(en)
|
2013-03-15 |
2016-07-26 |
Bitmicro Networks, Inc. |
Hardware-assisted DMA transfer with dependency table configured to permit-in parallel-data drain from cache without processor intervention when filled or drained
|
US9244763B1
(en)
|
2013-03-15 |
2016-01-26 |
Sandisk Enterprise Ip Llc |
System and method for updating a reading threshold voltage based on symbol transition information
|
US9092350B1
(en)
|
2013-03-15 |
2015-07-28 |
Sandisk Enterprise Ip Llc |
Detection and handling of unbalanced errors in interleaved codewords
|
US9934045B1
(en)
|
2013-03-15 |
2018-04-03 |
Bitmicro Networks, Inc. |
Embedded system boot from a storage device
|
US9430386B2
(en)
|
2013-03-15 |
2016-08-30 |
Bitmicro Networks, Inc. |
Multi-leveled cache management in a hybrid storage system
|
US9798688B1
(en)
|
2013-03-15 |
2017-10-24 |
Bitmicro Networks, Inc. |
Bus arbitration with routing and failover mechanism
|
US9916213B1
(en)
|
2013-03-15 |
2018-03-13 |
Bitmicro Networks, Inc. |
Bus arbitration with routing and failover mechanism
|
US10489318B1
(en)
|
2013-03-15 |
2019-11-26 |
Bitmicro Networks, Inc. |
Scatter-gather approach for parallel data transfer in a mass storage system
|
US9875205B1
(en)
|
2013-03-15 |
2018-01-23 |
Bitmicro Networks, Inc. |
Network of memory systems
|
US9734067B1
(en)
|
2013-03-15 |
2017-08-15 |
Bitmicro Networks, Inc. |
Write buffering
|
US9720603B1
(en)
|
2013-03-15 |
2017-08-01 |
Bitmicro Networks, Inc. |
IOC to IOC distributed caching architecture
|
US9971524B1
(en)
|
2013-03-15 |
2018-05-15 |
Bitmicro Networks, Inc. |
Scatter-gather approach for parallel data transfer in a mass storage system
|
US10120694B2
(en)
|
2013-03-15 |
2018-11-06 |
Bitmicro Networks, Inc. |
Embedded system boot from a storage device
|
US9236886B1
(en)
|
2013-03-15 |
2016-01-12 |
Sandisk Enterprise Ip Llc |
Universal and reconfigurable QC-LDPC encoder
|
US9672178B1
(en)
|
2013-03-15 |
2017-06-06 |
Bitmicro Networks, Inc. |
Bit-mapped DMA transfer with dependency table configured to monitor status so that a processor is not rendered as a bottleneck in a system
|
US9501436B1
(en)
|
2013-03-15 |
2016-11-22 |
Bitmicro Networks, Inc. |
Multi-level message passing descriptor
|
US9367246B2
(en)
|
2013-03-15 |
2016-06-14 |
Sandisk Technologies Inc. |
Performance optimization of data transfer for soft information generation
|
US9159437B2
(en)
|
2013-06-11 |
2015-10-13 |
Sandisk Enterprise IP LLC. |
Device and method for resolving an LM flag issue
|
US9524235B1
(en)
|
2013-07-25 |
2016-12-20 |
Sandisk Technologies Llc |
Local hash value generation in non-volatile data storage systems
|
US9384126B1
(en)
|
2013-07-25 |
2016-07-05 |
Sandisk Technologies Inc. |
Methods and systems to avoid false negative results in bloom filters implemented in non-volatile data storage systems
|
US9043517B1
(en)
|
2013-07-25 |
2015-05-26 |
Sandisk Enterprise Ip Llc |
Multipass programming in buffers implemented in non-volatile data storage systems
|
US9639463B1
(en)
|
2013-08-26 |
2017-05-02 |
Sandisk Technologies Llc |
Heuristic aware garbage collection scheme in storage systems
|
US9361221B1
(en)
|
2013-08-26 |
2016-06-07 |
Sandisk Technologies Inc. |
Write amplification reduction through reliable writes during garbage collection
|
US9442662B2
(en)
|
2013-10-18 |
2016-09-13 |
Sandisk Technologies Llc |
Device and method for managing die groups
|
US9298608B2
(en)
|
2013-10-18 |
2016-03-29 |
Sandisk Enterprise Ip Llc |
Biasing for wear leveling in storage systems
|
US9436831B2
(en)
|
2013-10-30 |
2016-09-06 |
Sandisk Technologies Llc |
Secure erase in a memory device
|
US9263156B2
(en)
|
2013-11-07 |
2016-02-16 |
Sandisk Enterprise Ip Llc |
System and method for adjusting trip points within a storage device
|
US9244785B2
(en)
|
2013-11-13 |
2016-01-26 |
Sandisk Enterprise Ip Llc |
Simulated power failure and data hardening
|
US9703816B2
(en)
|
2013-11-19 |
2017-07-11 |
Sandisk Technologies Llc |
Method and system for forward reference logging in a persistent datastore
|
US9520197B2
(en)
|
2013-11-22 |
2016-12-13 |
Sandisk Technologies Llc |
Adaptive erase of a storage device
|
US9520162B2
(en)
|
2013-11-27 |
2016-12-13 |
Sandisk Technologies Llc |
DIMM device controller supervisor
|
US9582058B2
(en)
|
2013-11-29 |
2017-02-28 |
Sandisk Technologies Llc |
Power inrush management of storage devices
|
US9235245B2
(en)
|
2013-12-04 |
2016-01-12 |
Sandisk Enterprise Ip Llc |
Startup performance and power isolation
|
US9129665B2
(en)
|
2013-12-17 |
2015-09-08 |
Sandisk Enterprise Ip Llc |
Dynamic brownout adjustment in a storage device
|
US9703636B2
(en)
|
2014-03-01 |
2017-07-11 |
Sandisk Technologies Llc |
Firmware reversion trigger and control
|
US9685242B2
(en)
*
|
2014-03-11 |
2017-06-20 |
Kabushiki Kaisha Toshiba |
Memory system
|
US9390814B2
(en)
|
2014-03-19 |
2016-07-12 |
Sandisk Technologies Llc |
Fault detection and prediction for data storage elements
|
US9454448B2
(en)
|
2014-03-19 |
2016-09-27 |
Sandisk Technologies Llc |
Fault testing in storage devices
|
US9448876B2
(en)
|
2014-03-19 |
2016-09-20 |
Sandisk Technologies Llc |
Fault detection and prediction in storage devices
|
US9626400B2
(en)
|
2014-03-31 |
2017-04-18 |
Sandisk Technologies Llc |
Compaction of information in tiered data structure
|
US9390021B2
(en)
|
2014-03-31 |
2016-07-12 |
Sandisk Technologies Llc |
Efficient cache utilization in a tiered data structure
|
US9626399B2
(en)
|
2014-03-31 |
2017-04-18 |
Sandisk Technologies Llc |
Conditional updates for reducing frequency of data modification operations
|
US9697267B2
(en)
|
2014-04-03 |
2017-07-04 |
Sandisk Technologies Llc |
Methods and systems for performing efficient snapshots in tiered data structures
|
US10055150B1
(en)
|
2014-04-17 |
2018-08-21 |
Bitmicro Networks, Inc. |
Writing volatile scattered memory metadata to flash device
|
US10078604B1
(en)
|
2014-04-17 |
2018-09-18 |
Bitmicro Networks, Inc. |
Interrupt coalescing
|
US9811461B1
(en)
|
2014-04-17 |
2017-11-07 |
Bitmicro Networks, Inc. |
Data storage system
|
US10042792B1
(en)
|
2014-04-17 |
2018-08-07 |
Bitmicro Networks, Inc. |
Method for transferring and receiving frames across PCI express bus for SSD device
|
US9952991B1
(en)
|
2014-04-17 |
2018-04-24 |
Bitmicro Networks, Inc. |
Systematic method on queuing of descriptors for multiple flash intelligent DMA engine operation
|
US10025736B1
(en)
|
2014-04-17 |
2018-07-17 |
Bitmicro Networks, Inc. |
Exchange message protocol message transmission between two devices
|
US9093160B1
(en)
|
2014-05-30 |
2015-07-28 |
Sandisk Technologies Inc. |
Methods and systems for staggered memory operations
|
US9070481B1
(en)
|
2014-05-30 |
2015-06-30 |
Sandisk Technologies Inc. |
Internal current measurement for age measurements
|
US9703491B2
(en)
|
2014-05-30 |
2017-07-11 |
Sandisk Technologies Llc |
Using history of unaligned writes to cache data and avoid read-modify-writes in a non-volatile storage device
|
US10372613B2
(en)
|
2014-05-30 |
2019-08-06 |
Sandisk Technologies Llc |
Using sub-region I/O history to cache repeatedly accessed sub-regions in a non-volatile storage device
|
US10114557B2
(en)
|
2014-05-30 |
2018-10-30 |
Sandisk Technologies Llc |
Identification of hot regions to enhance performance and endurance of a non-volatile storage device
|
US10656842B2
(en)
|
2014-05-30 |
2020-05-19 |
Sandisk Technologies Llc |
Using history of I/O sizes and I/O sequences to trigger coalesced writes in a non-volatile storage device
|
US10656840B2
(en)
|
2014-05-30 |
2020-05-19 |
Sandisk Technologies Llc |
Real-time I/O pattern recognition to enhance performance and endurance of a storage device
|
US10146448B2
(en)
|
2014-05-30 |
2018-12-04 |
Sandisk Technologies Llc |
Using history of I/O sequences to trigger cached read ahead in a non-volatile storage device
|
US10162748B2
(en)
|
2014-05-30 |
2018-12-25 |
Sandisk Technologies Llc |
Prioritizing garbage collection and block allocation based on I/O history for logical address regions
|
US9652381B2
(en)
|
2014-06-19 |
2017-05-16 |
Sandisk Technologies Llc |
Sub-block garbage collection
|
US9443601B2
(en)
|
2014-09-08 |
2016-09-13 |
Sandisk Technologies Llc |
Holdup capacitor energy harvesting
|
JP6411282B2
(ja)
*
|
2015-05-15 |
2018-10-24 |
ラピスセミコンダクタ株式会社 |
半導体メモリ及びデータ書込方法
|
FR3039922B1
(fr)
*
|
2015-08-06 |
2018-02-02 |
Stmicroelectronics (Rousset) Sas |
Procede d'ecriture dans une memoire du type eeprom et dispositif de memoire correspondant
|
US9910749B2
(en)
|
2016-06-23 |
2018-03-06 |
Sandisk Technologies Llc |
Non-volatile memory with dynamic repurpose of word line
|
US10290353B2
(en)
|
2016-09-06 |
2019-05-14 |
Western Digital Technologies, Inc. |
Error mitigation for 3D NAND flash memory
|
US10552050B1
(en)
|
2017-04-07 |
2020-02-04 |
Bitmicro Llc |
Multi-dimensional computer storage system
|
US11256616B2
(en)
*
|
2019-12-24 |
2022-02-22 |
Micron Technology, Inc. |
Power loss data protection in a memory sub-system
|