DE69625494T2 - Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle - Google Patents

Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle

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Publication number
DE69625494T2
DE69625494T2 DE69625494T DE69625494T DE69625494T2 DE 69625494 T2 DE69625494 T2 DE 69625494T2 DE 69625494 T DE69625494 T DE 69625494T DE 69625494 T DE69625494 T DE 69625494T DE 69625494 T2 DE69625494 T2 DE 69625494T2
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DE
Germany
Prior art keywords
integrated circuit
bits per
recovery
multiple digital
digital bits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69625494T
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English (en)
Other versions
DE69625494D1 (de
Inventor
M Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agate Semiconductor Inc
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Agate Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agate Semiconductor Inc filed Critical Agate Semiconductor Inc
Application granted granted Critical
Publication of DE69625494D1 publication Critical patent/DE69625494D1/de
Publication of DE69625494T2 publication Critical patent/DE69625494T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5624—Concurrent multilevel programming and programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5632—Multilevel reading using successive approximation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
DE69625494T 1995-10-06 1996-10-03 Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle Expired - Lifetime DE69625494T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/540,117 US5687114A (en) 1995-10-06 1995-10-06 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
PCT/US1996/015924 WO1997013250A1 (en) 1995-10-06 1996-10-03 Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell

Publications (2)

Publication Number Publication Date
DE69625494D1 DE69625494D1 (de) 2003-01-30
DE69625494T2 true DE69625494T2 (de) 2003-10-30

Family

ID=24154077

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69625494T Expired - Lifetime DE69625494T2 (de) 1995-10-06 1996-10-03 Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle

Country Status (9)

Country Link
US (3) US5687114A (de)
EP (3) EP1239490A3 (de)
JP (1) JPH11507464A (de)
KR (1) KR100303549B1 (de)
CN (1) CN1146918C (de)
AT (1) ATE230152T1 (de)
DE (1) DE69625494T2 (de)
TW (1) TW303466B (de)
WO (1) WO1997013250A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007022532A1 (de) * 2007-04-04 2008-10-09 Qimonda Ag Integrierte Schaltung, Speicherzellenarray, Speicherzellenmodul sowie Verfahren zum Betreiben einer integrierten Schaltung

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US6462986B1 (en) 2002-10-08
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US20020101778A1 (en) 2002-08-01
JPH11507464A (ja) 1999-06-29
TW303466B (de) 1997-04-21
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