DE69627241D1 - Plasmabearbeitungsgerät - Google Patents

Plasmabearbeitungsgerät

Info

Publication number
DE69627241D1
DE69627241D1 DE69627241T DE69627241T DE69627241D1 DE 69627241 D1 DE69627241 D1 DE 69627241D1 DE 69627241 T DE69627241 T DE 69627241T DE 69627241 T DE69627241 T DE 69627241T DE 69627241 D1 DE69627241 D1 DE 69627241D1
Authority
DE
Germany
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69627241T
Other languages
English (en)
Other versions
DE69627241T2 (de
Inventor
Takeshi Akimoto
Katsuo Katayama
Kyouichi Komachi
Kouichi Iio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Sumitomo Metal Industries Ltd filed Critical NEC Corp
Application granted granted Critical
Publication of DE69627241D1 publication Critical patent/DE69627241D1/de
Publication of DE69627241T2 publication Critical patent/DE69627241T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
DE69627241T 1995-06-15 1996-06-14 Plasmabearbeitungsgerät Expired - Lifetime DE69627241T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP14847395 1995-06-15
JP14847395 1995-06-15
JP32763795A JP3164200B2 (ja) 1995-06-15 1995-12-15 マイクロ波プラズマ処理装置
JP32763795 1995-12-15

Publications (2)

Publication Number Publication Date
DE69627241D1 true DE69627241D1 (de) 2003-05-15
DE69627241T2 DE69627241T2 (de) 2004-01-08

Family

ID=26478663

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627241T Expired - Lifetime DE69627241T2 (de) 1995-06-15 1996-06-14 Plasmabearbeitungsgerät

Country Status (6)

Country Link
US (1) US5911852A (de)
EP (1) EP0749149B1 (de)
JP (1) JP3164200B2 (de)
KR (1) KR100260218B1 (de)
DE (1) DE69627241T2 (de)
TW (1) TW302593B (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3430053B2 (ja) * 1999-02-01 2003-07-28 東京エレクトロン株式会社 プラズマ処理装置
TW469534B (en) * 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
JP4488551B2 (ja) * 1999-06-29 2010-06-23 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及び封止部材
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
US6652763B1 (en) * 2000-04-03 2003-11-25 Hrl Laboratories, Llc Method and apparatus for large-scale diamond polishing
JP2002249864A (ja) * 2000-04-18 2002-09-06 Ngk Insulators Ltd 耐ハロゲンガスプラズマ用部材およびその製造方法
US6613442B2 (en) * 2000-12-29 2003-09-02 Lam Research Corporation Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
US7670688B2 (en) 2001-06-25 2010-03-02 Applied Materials, Inc. Erosion-resistant components for plasma process chambers
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
TW551782U (en) * 2002-10-09 2003-09-01 Ind Tech Res Inst Microwave plasma processing device
TW200423195A (en) * 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
JP4532479B2 (ja) * 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
JP4597972B2 (ja) 2003-03-31 2010-12-15 東京エレクトロン株式会社 処理部材上に隣接するコーティングを接合する方法。
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
TW200640301A (en) * 2005-05-12 2006-11-16 Shimadzu Corp Surface wave plasma processing apparatus
US7938081B2 (en) * 2006-09-12 2011-05-10 Tokyo Electron Limited Radial line slot antenna having a conductive layer
US7998307B2 (en) * 2006-09-12 2011-08-16 Tokyo Electron Limited Electron beam enhanced surface wave plasma source
JP2008181710A (ja) * 2007-01-23 2008-08-07 Canon Inc プラズマ処理装置及び方法
WO2008093389A1 (ja) * 2007-01-29 2008-08-07 Sumitomo Electric Industries, Ltd. マイクロ波プラズマｃｖｄ装置
JP5204476B2 (ja) * 2007-12-19 2013-06-05 アプライド マテリアルズ インコーポレイテッド プラズマ装置
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
JP5136574B2 (ja) * 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN102577629B (zh) * 2009-09-15 2015-04-29 三菱电机株式会社 等离子体生成装置
TW201239130A (en) * 2011-03-16 2012-10-01 I-Nan Lin Microwave plasma system
JP2016086099A (ja) * 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
JP6695705B2 (ja) * 2016-02-17 2020-05-20 東京エレクトロン株式会社 プラズマ処理装置
JP2022526851A (ja) 2019-04-05 2022-05-26 ヘレーウス コナミック ノース アメリカ エルエルシー エッチング用途向けの制御された多孔質酸化イットリウム
CN114746377A (zh) 2019-11-18 2022-07-12 贺利氏科纳米北美有限责任公司 耐等离子体的钇铝氧化物体
WO2022072705A2 (en) 2020-10-03 2022-04-07 Heraeus Conamic North America Llc Sintered ceramic body of large dimension and method of making
US20240010510A1 (en) 2020-10-03 2024-01-11 Heraeus Conamic North America Llc Sintered yttrium oxide body of large dimension
KR20230079382A (ko) 2020-10-03 2023-06-07 헤레우스 코나믹 노스 아메리카 엘엘씨 큰 치수의 소결 세라믹체의 제조를 위한 장치
CN116209648A (zh) 2020-10-15 2023-06-02 贺利氏科纳米北美有限责任公司 多层烧结陶瓷体及制备方法
US20240059616A1 (en) 2020-12-18 2024-02-22 Heraeus Conamic North America Llc Plasma resistant yttrium aluminum oxide chamber components
KR20230104668A (ko) 2020-12-18 2023-07-10 헤레우스 코나믹 노스 아메리카 엘엘씨 다층 소결 세라믹체
KR20220099004A (ko) * 2021-01-05 2022-07-12 삼성전자주식회사 웨이퍼 처리 장치
KR20240010724A (ko) 2021-07-07 2024-01-24 헤레우스 코나믹 노스 아메리카 엘엘씨 플라즈마 저항성 재료를 위한 이트리아-지르코니아 소결 세라믹
WO2023039357A1 (en) 2021-09-10 2023-03-16 Heraeus Conamic North America Llc Uv-activated red ceramic bodies comprising yag for use in semiconductor processing chambers
WO2023122597A1 (en) 2021-12-23 2023-06-29 Heraeus Conamic North America Llc Multilayer sintered ceramic body and method of making
EP4215360A1 (de) 2022-01-24 2023-07-26 Heraeus Conamic North America LLC Mehrschichtiger gesinterter keramischer körper und verfahren zu seiner herstellung
TW202340123A (zh) 2022-03-31 2023-10-16 美商賀利氏科納米北美有限責任公司 陶瓷之高頻率拋光
EP4269024A1 (de) 2022-04-29 2023-11-01 Heraeus Conamic North America LLC Hochfrequenzpolieren von keramik
WO2024019940A2 (en) 2022-07-21 2024-01-25 Heraeus Conamic North America Llc Process for sintering large diameter yag layers substantially free of unreacted yttrium oxide and yttrium rich phases

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122273A (ja) * 1989-10-06 1991-05-24 Hitachi Ltd マイクロ波を用いた成膜装置
JPH03272136A (ja) * 1990-03-22 1991-12-03 Hitachi Ltd ドライエッチング装置
JPH04192325A (ja) * 1990-11-24 1992-07-10 Hitachi Ltd マイクロ波プラズマ処理装置およびマイクロ波導入窓のクリーニング方法
EP0502269A1 (de) * 1991-03-06 1992-09-09 Hitachi, Ltd. Verfahren und Anordnung zum Behandeln mittels Mikrowellenplasmas
US5432315A (en) * 1991-05-31 1995-07-11 Hitachi, Ltd. Plasma process apparatus including ground electrode with protection film
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
JP2570090B2 (ja) * 1992-10-08 1997-01-08 日本電気株式会社 ドライエッチング装置
JP3042208B2 (ja) * 1992-09-22 2000-05-15 住友金属工業株式会社 マイクロ波プラズマ処理装置
JP2611732B2 (ja) * 1993-12-13 1997-05-21 日本電気株式会社 プラズマ処理装置
JPH07263348A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
JP3171222B2 (ja) * 1994-06-14 2001-05-28 日本電気株式会社 マイクロ波プラズマ処理装置
US5545258A (en) * 1994-06-14 1996-08-13 Sumitomo Metal Industries, Ltd. Microwave plasma processing system

Also Published As

Publication number Publication date
DE69627241T2 (de) 2004-01-08
TW302593B (de) 1997-04-11
EP0749149B1 (de) 2003-04-09
JPH0963794A (ja) 1997-03-07
JP3164200B2 (ja) 2001-05-08
KR100260218B1 (ko) 2000-07-01
US5911852A (en) 1999-06-15
EP0749149A3 (de) 1999-01-20
EP0749149A2 (de) 1996-12-18

Similar Documents

Publication Publication Date Title
DE69635640D1 (de) Plasmabearbeitungsgerät
DE69635124D1 (de) Plasmabearbeitungsgerät
DE69627241D1 (de) Plasmabearbeitungsgerät
DE69500565D1 (de) Plasmabearbeitungsvorrichtung
IL118342A (en) Plasma etching apparatus
DE69635972D1 (de) Plasma-Ätz-Verfahren
NO981108D0 (no) Freseapparat
DE69318480D1 (de) Plasmabearbeitungsgerät
DE69405080D1 (de) Plasmabearbeitungsgerät
BR9607366A (pt) Aparelho transportador
TW514336U (en) Plasma processing device
SG66424A1 (en) Plasma processing apparatus
DE69626446T2 (de) Plasmabearbeitungsgerät
EP0731430A3 (de) Verkaufsdatenregistriervorrichtung
DE69413159T2 (de) Plasma-Entladungs-Bearbeitungsvorrichtung
DE69630086D1 (de) Dokumentenverarbeitungsvorrichtung
GB2302743B (en) Processing apparatus
GB9714341D0 (en) Plasma processing apparatus
DE69500830T2 (de) Plasmabearbeitungsgerät
DE9405808U1 (de) Plasma-Bearbeitungsgerät
DE69512376D1 (de) Plasma-bearbeitungsvorrichtung
KR970004385U (ko) 잔반 처리장치
GB2306017B (en) Photographic processing apparatus
EP0723197A3 (de) Photographisches Behandlungsgerät
DE69501095D1 (de) Plasmabearbeitungsgerät

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

Owner name: SUMITOMO METAL INDUSTRIES, LTD., OSAKA, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

R082 Change of representative

Ref document number: 749149

Country of ref document: EP

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

R081 Change of applicant/patentee

Ref document number: 749149

Country of ref document: EP

Owner name: RENESAS ELECTRONICS CORPORATION, JP

Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP

Effective date: 20120828

R082 Change of representative

Ref document number: 749149

Country of ref document: EP

Representative=s name: STREHL, SCHUEBEL-HOPF & PARTNER, DE

Effective date: 20120828