DE69703957D1 - Verfahren zur Herstellung von kristallinen Ceroxidteilchen. - Google Patents
Verfahren zur Herstellung von kristallinen Ceroxidteilchen.Info
- Publication number
- DE69703957D1 DE69703957D1 DE69703957T DE69703957T DE69703957D1 DE 69703957 D1 DE69703957 D1 DE 69703957D1 DE 69703957 T DE69703957 T DE 69703957T DE 69703957 T DE69703957 T DE 69703957T DE 69703957 D1 DE69703957 D1 DE 69703957D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- oxide particles
- cerium oxide
- crystalline cerium
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20005696 | 1996-07-30 | ||
| JP20345096 | 1996-08-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69703957D1 true DE69703957D1 (de) | 2001-03-01 |
| DE69703957T2 DE69703957T2 (de) | 2001-08-30 |
Family
ID=26511940
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69703957T Expired - Lifetime DE69703957T2 (de) | 1996-07-30 | 1997-07-30 | Verfahren zur Herstellung von kristallinen Ceroxidteilchen. |
| DE69712637T Expired - Fee Related DE69712637T2 (de) | 1996-07-30 | 1997-07-30 | Schleifmittel |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69712637T Expired - Fee Related DE69712637T2 (de) | 1996-07-30 | 1997-07-30 | Schleifmittel |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5962343A (de) |
| EP (2) | EP0822164B1 (de) |
| DE (2) | DE69703957T2 (de) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100360787B1 (ko) * | 1996-02-07 | 2003-01-29 | 히다치 가세고교 가부시끼가이샤 | 산화세륨연마제,반도체칩및반도체장치,그들의제조법및기판의연마법 |
| US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
| US6692660B2 (en) * | 2001-04-26 | 2004-02-17 | Nanogram Corporation | High luminescence phosphor particles and related particle compositions |
| US6046112A (en) * | 1998-12-14 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Chemical mechanical polishing slurry |
| GB9903519D0 (en) * | 1999-02-16 | 1999-04-07 | Europ Economic Community | Precipitation process |
| US6752844B2 (en) * | 1999-03-29 | 2004-06-22 | Intel Corporation | Ceric-ion slurry for use in chemical-mechanical polishing |
| EP1201725A4 (de) * | 1999-06-28 | 2007-09-12 | Nissan Chemical Ind Ltd | Schleifmittel für harte glas plattenteller |
| FR2801298B1 (fr) * | 1999-11-19 | 2002-05-03 | Rhodia Terres Rares | Dispersion colloidale d'un compose de cerium et contenant du cerium iii, procede de preparation et utilisation |
| JP2001267273A (ja) * | 2000-01-11 | 2001-09-28 | Sumitomo Chem Co Ltd | 金属用研磨材、研磨組成物及び研磨方法 |
| EP1272580A2 (de) * | 2000-04-11 | 2003-01-08 | Cabot Microelectronics Corporation | System zur vorzugsweisenden abtrennung von siliziumoxid |
| WO2002028979A1 (fr) * | 2000-10-02 | 2002-04-11 | Mitsui Mining & Smelting Co.,Ltd. | Matiere abrasive a base de cerium et procede de production de ladite matiere |
| US7887714B2 (en) | 2000-12-25 | 2011-02-15 | Nissan Chemical Industries, Ltd. | Cerium oxide sol and abrasive |
| EP1369906B1 (de) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polierzusammensetzung und verfahren zum polieren eines substrats |
| TWI272249B (en) * | 2001-02-27 | 2007-02-01 | Nissan Chemical Ind Ltd | Crystalline ceric oxide sol and process for producing the same |
| US7666239B2 (en) * | 2001-11-16 | 2010-02-23 | Ferro Corporation | Hydrothermal synthesis of cerium-titanium oxide for use in CMP |
| US20060032836A1 (en) * | 2001-11-16 | 2006-02-16 | Ferro Corporation | Methods of controlling the properties of abrasive particles for use in chemical-mechanical polishing slurries |
| KR100575442B1 (ko) * | 2001-11-16 | 2006-05-03 | 쇼와 덴코 가부시키가이샤 | 세륨계 연마재 및 세륨계 연마재 슬러리 |
| US6596042B1 (en) | 2001-11-16 | 2003-07-22 | Ferro Corporation | Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process |
| AU2002359356A1 (en) * | 2001-11-16 | 2003-06-10 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
| AU2002365979A1 (en) * | 2001-11-20 | 2003-06-10 | Rensselaer Polytechnic Institute | Method for polishing a substrate surface |
| KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
| KR100477939B1 (ko) * | 2002-04-15 | 2005-03-18 | 주식회사 엘지화학 | 단결정 산화세륨 분말의 제조방법 |
| US7025943B2 (en) * | 2002-05-15 | 2006-04-11 | The Curators Of The University Of Missouri | Method for preparation of nanometer cerium-based oxide particles |
| US6729935B2 (en) * | 2002-06-13 | 2004-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for in-situ monitoring of mixing ratio of high selectivity slurry |
| SG168405A1 (en) * | 2002-09-06 | 2011-02-28 | Asahi Glass Co Ltd | Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit |
| US6863825B2 (en) | 2003-01-29 | 2005-03-08 | Union Oil Company Of California | Process for removing arsenic from aqueous streams |
| KR100511943B1 (ko) * | 2003-05-22 | 2005-09-01 | 한화석유화학 주식회사 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
| JP4285480B2 (ja) * | 2003-05-28 | 2009-06-24 | 日立化成工業株式会社 | 研磨剤及び研磨方法 |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| FR2872716B1 (fr) * | 2004-07-06 | 2006-11-03 | Altreg Sarl | Produit de stockage reversible de dihydrogene, procede de fabrication d'un tel produit, et utilisation d'un tel produit pour le stockage reversible de dihydrogene |
| EP2468682B1 (de) * | 2004-08-17 | 2014-01-15 | Nissan Chemical Industries, Ltd. | Verfahren zur Herstellung von Zirkonoxidsol |
| JP5012026B2 (ja) * | 2004-11-08 | 2012-08-29 | 旭硝子株式会社 | ＣｅＯ２微粒子の製造方法 |
| KR101134590B1 (ko) * | 2005-03-28 | 2012-04-09 | 삼성코닝정밀소재 주식회사 | 분산 안정성이 우수한 연마 슬러리의 제조방법 |
| KR100812052B1 (ko) * | 2005-11-14 | 2008-03-10 | 주식회사 엘지화학 | 탄산세륨 분말, 산화세륨 분말, 그 제조방법, 및 이를포함하는 ｃｍｐ 슬러리 |
| FR2906800B1 (fr) * | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage |
| US8066874B2 (en) | 2006-12-28 | 2011-11-29 | Molycorp Minerals, Llc | Apparatus for treating a flow of an aqueous solution containing arsenic |
| EP2105467B1 (de) * | 2006-12-28 | 2012-02-22 | Dow Corning Toray Co., Ltd. | Wärmehärtende silikonkautschukzusammensetzung |
| US8349764B2 (en) | 2007-10-31 | 2013-01-08 | Molycorp Minerals, Llc | Composition for treating a fluid |
| US8252087B2 (en) | 2007-10-31 | 2012-08-28 | Molycorp Minerals, Llc | Process and apparatus for treating a gas containing a contaminant |
| CN101952116A (zh) * | 2007-11-16 | 2011-01-19 | 瓦林格光催化股份有限公司 | 光催化板或面板及其制造方法 |
| KR100873945B1 (ko) * | 2008-07-16 | 2008-12-12 | (주) 뉴웰 | 미세 산화세륨 분말 그 제조 방법 및 이를 포함하는 씨엠피슬러리 |
| CN102361686B (zh) | 2009-03-23 | 2014-10-15 | 瓦林格光催化股份有限公司 | 使用具有微米级珠的珠磨机制备具有保持结晶度的二氧化钛纳米颗粒胶态悬浮体 |
| US9233863B2 (en) | 2011-04-13 | 2016-01-12 | Molycorp Minerals, Llc | Rare earth removal of hydrated and hydroxyl species |
| CA2839679C (en) | 2011-07-05 | 2020-12-01 | Valinge Photocatalytic Ab | Coated wood products and method of producing coated wood products |
| RU2643148C2 (ru) | 2012-03-20 | 2018-01-31 | Велинге Фотокаталитик Аб | Фотокаталитические композиции, содержащие диоксид титана и добавки против фотообесцвечивания |
| US9375750B2 (en) | 2012-12-21 | 2016-06-28 | Valinge Photocatalytic Ab | Method for coating a building panel and a building panel |
| CN105555882B (zh) | 2013-09-25 | 2021-04-27 | 瓦林格光催化股份有限公司 | 施加光催化分散体的方法和制板方法 |
| EP3113859A4 (de) | 2014-03-07 | 2017-10-04 | Secure Natural Resources LLC | Cerium-(iv)-oxid mit hervorragenden arsenentfernungseigenschaften |
| KR20170044522A (ko) | 2015-10-15 | 2017-04-25 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법 |
| JP7220114B2 (ja) * | 2019-04-01 | 2023-02-09 | 山口精研工業株式会社 | 窒化アルミニウム基板用研磨剤組成物および窒化アルミニウム基板の研磨方法 |
| KR102484635B1 (ko) * | 2020-08-31 | 2023-01-04 | 솔브레인 주식회사 | 산화 세륨 입자, 이를 포함하는 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE145853C (de) * | ||||
| US3713796A (en) * | 1969-01-02 | 1973-01-30 | Eastman Kodak Co | Lens polishing composition containing diamonds in an epoxide resin matrix |
| US3710517A (en) * | 1971-02-22 | 1973-01-16 | Eastman Kodak Co | Process for finish polishing of glass lenses |
| AT339253B (de) * | 1975-07-25 | 1977-10-10 | Treibacher Chemische Werke Ag | Verfahren zur herstellung eines reinen ceroxids |
| WO1979000248A1 (en) * | 1977-11-01 | 1979-05-17 | Atomic Energy Authority Uk | Production of dispersions |
| GB2075478B (en) * | 1980-05-09 | 1983-10-12 | Atomic Energy Authority Uk | Improvements in or relating to cerium compounds |
| GB2102780B (en) * | 1981-08-07 | 1985-04-03 | Atomic Energy Authority Uk | Improvements in or relating to compounds |
| DE3271142D1 (en) * | 1981-08-07 | 1986-06-19 | Atomic Energy Authority Uk | Cerium compounds |
| US4647401A (en) * | 1983-01-24 | 1987-03-03 | Rhone Poulenc Inc. | Process for preparing colloidal ceric oxide and complexes thereof with free organic acids |
| FR2545830B1 (fr) * | 1983-05-13 | 1986-01-03 | Rhone Poulenc Spec Chim | Nouvelle composition de polissage a base de cerium et son procede de fabrication |
| JPS6013847A (ja) * | 1983-07-04 | 1985-01-24 | Shin Etsu Chem Co Ltd | 放射線硬化性オルガノポリシロキサン組成物 |
| US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
| FR2583034A1 (fr) * | 1985-06-10 | 1986-12-12 | Rhone Poulenc Spec Chim | Nouvel oxyde cerique, son procede de fabrication et ses applications |
| FR2593195B1 (fr) * | 1986-01-22 | 1988-08-12 | Centre Nat Rech Scient | Nouvelles compositions particulaires d'oxyde de terre rare, leur preparation et leur application |
| FR2604443A1 (fr) * | 1986-09-26 | 1988-04-01 | Rhone Poulenc Chimie | Composition de polissage a base de cerium destinee au polissage des verres organiques |
| FR2624519A1 (fr) * | 1987-12-09 | 1989-06-16 | Rhone Poulenc Chimie | Composition de polissage perfectionnee a base de cerium et son procede de preparation |
| FR2669028B1 (fr) * | 1990-11-13 | 1992-12-31 | Rhone Poulenc Chimie | Procede de fabrication d'oxalates doubles de terres rares et d'ammonium et leurs utilisations pour la fabrication d'oxydes de terres rares. |
| JPH062582A (ja) * | 1992-04-15 | 1994-01-11 | Nippondenso Co Ltd | 内燃機関の燃料噴射装置 |
| JP3335667B2 (ja) * | 1992-05-26 | 2002-10-21 | 株式会社東芝 | 半導体装置の製造方法 |
| US5389352A (en) * | 1993-07-21 | 1995-02-14 | Rodel, Inc. | Oxide particles and method for producing them |
| JP3098661B2 (ja) * | 1993-07-28 | 2000-10-16 | キヤノン株式会社 | 研磨剤組成物及びそれを用いる研磨方法 |
| JP3440505B2 (ja) * | 1993-09-14 | 2003-08-25 | 昭和電工株式会社 | 酸化第二セリウムの製造方法 |
| JPH081218A (ja) | 1994-06-16 | 1996-01-09 | Nisshin Steel Co Ltd | 金属帯の焼鈍、脱スケール、圧延操業方法 |
| JPH083541A (ja) * | 1994-06-17 | 1996-01-09 | Taki Chem Co Ltd | 精密研磨剤 |
| JP3837754B2 (ja) * | 1994-07-11 | 2006-10-25 | 日産化学工業株式会社 | 結晶性酸化第二セリウムの製造方法 |
| TW311905B (de) * | 1994-07-11 | 1997-08-01 | Nissan Chemical Ind Ltd | |
| US5542126A (en) * | 1994-11-08 | 1996-08-06 | Harvanek; Daniel | Instructional hand glove |
| FR2727328A1 (fr) * | 1994-11-25 | 1996-05-31 | Rhone Poulenc Chimie | Procede d'oxydation ou de thermohydrolyse d'un element chimique par chauffage par micro-ondes |
| JP2746861B2 (ja) * | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
| US5962343A (en) * | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
-
1997
- 1997-07-24 US US08/899,796 patent/US5962343A/en not_active Expired - Lifetime
- 1997-07-30 DE DE69703957T patent/DE69703957T2/de not_active Expired - Lifetime
- 1997-07-30 DE DE69712637T patent/DE69712637T2/de not_active Expired - Fee Related
- 1997-07-30 EP EP97810545A patent/EP0822164B1/de not_active Expired - Lifetime
- 1997-07-30 EP EP99113404A patent/EP0947469B1/de not_active Expired - Lifetime
-
1999
- 1999-07-09 US US09/350,147 patent/US6372003B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0822164A3 (de) | 1998-08-26 |
| US5962343A (en) | 1999-10-05 |
| US6372003B1 (en) | 2002-04-16 |
| DE69712637D1 (de) | 2002-06-20 |
| EP0947469A3 (de) | 2000-01-12 |
| EP0822164A2 (de) | 1998-02-04 |
| EP0947469B1 (de) | 2002-05-15 |
| DE69703957T2 (de) | 2001-08-30 |
| EP0947469A2 (de) | 1999-10-06 |
| DE69712637T2 (de) | 2003-01-30 |
| EP0822164B1 (de) | 2001-01-24 |
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