DE69717525T2 - Leseschaltung mit Grob-Feinbetrieb zur Bestimmung der Schwellspannung einer Speicherzelle - Google Patents

Leseschaltung mit Grob-Feinbetrieb zur Bestimmung der Schwellspannung einer Speicherzelle

Info

Publication number
DE69717525T2
DE69717525T2 DE69717525T DE69717525T DE69717525T2 DE 69717525 T2 DE69717525 T2 DE 69717525T2 DE 69717525 T DE69717525 T DE 69717525T DE 69717525 T DE69717525 T DE 69717525T DE 69717525 T2 DE69717525 T2 DE 69717525T2
Authority
DE
Germany
Prior art keywords
coarse
memory cell
threshold voltage
read circuit
fine operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69717525T
Other languages
English (en)
Other versions
DE69717525D1 (de
Inventor
Frank M Dunlap
Hock C So
Sau C Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of DE69717525D1 publication Critical patent/DE69717525D1/de
Application granted granted Critical
Publication of DE69717525T2 publication Critical patent/DE69717525T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642Sensing or reading circuits; Data output circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
DE69717525T 1996-03-26 1997-03-17 Leseschaltung mit Grob-Feinbetrieb zur Bestimmung der Schwellspannung einer Speicherzelle Expired - Lifetime DE69717525T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/622,332 US5748533A (en) 1996-03-26 1996-03-26 Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell

Publications (2)

Publication Number Publication Date
DE69717525D1 DE69717525D1 (de) 2003-01-16
DE69717525T2 true DE69717525T2 (de) 2003-07-10

Family

ID=24493794

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717525T Expired - Lifetime DE69717525T2 (de) 1996-03-26 1997-03-17 Leseschaltung mit Grob-Feinbetrieb zur Bestimmung der Schwellspannung einer Speicherzelle

Country Status (4)

Country Link
US (1) US5748533A (de)
EP (1) EP0798739B1 (de)
JP (1) JP4037482B2 (de)
DE (1) DE69717525T2 (de)

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Also Published As

Publication number Publication date
JP4037482B2 (ja) 2008-01-23
DE69717525D1 (de) 2003-01-16
EP0798739A2 (de) 1997-10-01
US5748533A (en) 1998-05-05
JPH10116495A (ja) 1998-05-06
EP0798739A3 (de) 1998-07-29
EP0798739B1 (de) 2002-12-04

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