DE69726304D1 - Nichtflüchtiger schreibbarer speicher mit programmierungsaufhebungsbefehl - Google Patents

Nichtflüchtiger schreibbarer speicher mit programmierungsaufhebungsbefehl

Info

Publication number
DE69726304D1
DE69726304D1 DE69726304T DE69726304T DE69726304D1 DE 69726304 D1 DE69726304 D1 DE 69726304D1 DE 69726304 T DE69726304 T DE 69726304T DE 69726304 T DE69726304 T DE 69726304T DE 69726304 D1 DE69726304 D1 DE 69726304D1
Authority
DE
Germany
Prior art keywords
writable memory
unlock command
nonvolatile writable
nonvolatile
unlock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726304T
Other languages
English (en)
Other versions
DE69726304T2 (de
Inventor
A Leak
G Bekele
C Price
W Brown
K Hazen
Prakash Dalvi
R Rozman
John Haid
Jerry Kreifels
E Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE69726304D1 publication Critical patent/DE69726304D1/de
Application granted granted Critical
Publication of DE69726304T2 publication Critical patent/DE69726304T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/20—Suspension of programming or erasing cells in an array in order to read other cells in it
DE69726304T 1996-09-20 1997-09-18 Nichtflüchtiger schreibbarer speicher mit programmierungsaufhebungsbefehl Expired - Lifetime DE69726304T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US718216 1996-09-20
US08/718,216 US6148360A (en) 1996-09-20 1996-09-20 Nonvolatile writeable memory with program suspend command
PCT/US1997/016765 WO1998012704A2 (en) 1996-09-20 1997-09-18 Nonvolatile writeable memory with program suspend command

Publications (2)

Publication Number Publication Date
DE69726304D1 true DE69726304D1 (de) 2003-12-24
DE69726304T2 DE69726304T2 (de) 2004-04-22

Family

ID=24885252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726304T Expired - Lifetime DE69726304T2 (de) 1996-09-20 1997-09-18 Nichtflüchtiger schreibbarer speicher mit programmierungsaufhebungsbefehl

Country Status (9)

Country Link
US (2) US6148360A (de)
EP (1) EP0931289B1 (de)
KR (1) KR100328426B1 (de)
CN (1) CN1137440C (de)
AU (1) AU4428997A (de)
DE (1) DE69726304T2 (de)
HK (1) HK1021761A1 (de)
TW (1) TW365659B (de)
WO (1) WO1998012704A2 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010011318A1 (en) 1997-02-27 2001-08-02 Vishram P. Dalvi Status indicators for flash memory
US6081870A (en) * 1997-11-06 2000-06-27 Micron Technology, Inc. Method and apparatus to achieve fast suspend in flash memories
KR100257868B1 (ko) * 1997-12-29 2000-06-01 윤종용 노어형 플래시 메모리 장치의 소거 방법
US6330638B1 (en) * 1998-09-18 2001-12-11 Agere Systems Guardian Corp. Synchronous audio DRAM storing audio and code data
EP1703520B1 (de) * 1999-02-01 2011-07-27 Renesas Electronics Corporation Integrierte Halbleiterschaltung und nichtflüchtiges Speicherelement
EP1073063A1 (de) 1999-07-30 2001-01-31 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit die funktioneller Fähigkeit von Burst- und Seitenmoduslesung während der Aufhängung einer elektrischen Veränderungswirkung
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
DE10015693A1 (de) * 2000-03-29 2001-10-18 Fujitsu Siemens Computers Gmbh Anordnung und Verfahren zur Reduzierung der Interruptverarbeitungszeit einer Datenverarbeitungseinrichtung
US7080205B2 (en) 2000-03-29 2006-07-18 Fujitsu Siemens Computer Gmbh Arrangement and method for reducing the processing time of a data processing device
US6418059B1 (en) 2000-06-26 2002-07-09 Intel Corporation Method and apparatus for non-volatile memory bit sequence program controller
WO2002067268A1 (en) * 2001-02-20 2002-08-29 Micron Technology, Inc. Write state machine architecture for flash memory internal instructions
ITMI20010342A1 (it) * 2001-02-20 2002-08-20 Micron Technology Inc Sistema di memoria non volatile per memorizzare valori di dati
WO2002073622A1 (fr) * 2001-03-09 2002-09-19 Thomson Licensing S.A. Dispositif electronique a memoire et procedes de commande d"un tel dispositif
US6879522B2 (en) * 2001-03-12 2005-04-12 Micron Technology, Inc. Method for making a memory device with plural substrates each having a memory array, a read only memory, and a write state machine
US7062616B2 (en) * 2001-06-12 2006-06-13 Intel Corporation Implementing a dual partition flash with suspend/resume capabilities
AU2003214624A1 (en) * 2002-04-25 2003-11-10 Kashya Israel Ltd. An apparatus for continuous compression of large volumes of data
KR100506061B1 (ko) * 2002-12-18 2005-08-03 주식회사 하이닉스반도체 특성 조정 장치를 부가한 메모리 장치
US6930925B2 (en) * 2003-10-14 2005-08-16 Atmel Corporation Suspend-resume programming method for flash memory
US7158411B2 (en) * 2004-04-01 2007-01-02 Macronix International Co., Ltd. Integrated code and data flash memory
KR101051703B1 (ko) 2004-08-09 2011-07-25 삼성전자주식회사 서스펜드/리쥼 기능을 갖는 집적 회로 카드 및 집적 회로카드 시스템
US20060053247A1 (en) * 2004-09-08 2006-03-09 Hugo Cheung Incremental erasing of flash memory to improve system performance
ITMI20041904A1 (it) * 2004-10-07 2005-01-07 Atmel Corp "metodo e sistema per un approccio di programmazione per un dispositivo elettronico non volatile"
ITMI20050063A1 (it) * 2005-01-20 2006-07-21 Atmel Corp Metodo e sistema per la gestione di una richiesta di sospensione in una memoria flash
WO2006078744A2 (en) * 2005-01-20 2006-07-27 Atmel Corporation Method and system for managing a suspend request in a flash memory
KR100687424B1 (ko) * 2005-08-29 2007-02-26 주식회사 하이닉스반도체 비휘발성 메모리 장치
US7881123B2 (en) * 2005-09-23 2011-02-01 Macronix International Co., Ltd. Multi-operation mode nonvolatile memory
KR100673027B1 (ko) * 2006-01-31 2007-01-24 삼성전자주식회사 고온 스트레스로 인해 감소된 읽기 마진을 보상할 수 있는불 휘발성 메모리 장치
US8156403B2 (en) 2006-05-12 2012-04-10 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
US8239735B2 (en) 2006-05-12 2012-08-07 Apple Inc. Memory Device with adaptive capacity
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
WO2008026203A2 (en) * 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) * 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US8370562B2 (en) * 2007-02-25 2013-02-05 Sandisk Il Ltd. Interruptible cache flushing in flash memory systems
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
WO2008139441A2 (en) * 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) * 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8527819B2 (en) 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8270246B2 (en) 2007-11-13 2012-09-18 Apple Inc. Optimized selection of memory chips in multi-chips memory devices
US8225181B2 (en) * 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) * 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) * 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
CN101630300B (zh) * 2009-05-18 2014-09-10 上海闻泰电子科技有限公司 一种利用sram总线扩展t卡的方法
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
KR20120082292A (ko) * 2011-01-13 2012-07-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 동작 방법
US9076528B2 (en) * 2011-05-31 2015-07-07 Micron Technology, Inc. Apparatus including memory management control circuitry and related methods for allocation of a write block cluster
US9813080B1 (en) 2013-03-05 2017-11-07 Microsemi Solutions (U.S.), Inc. Layer specific LDPC decoder
US10230396B1 (en) 2013-03-05 2019-03-12 Microsemi Solutions (Us), Inc. Method and apparatus for layer-specific LDPC decoding
US9007841B1 (en) 2013-10-24 2015-04-14 Western Digital Technologies, Inc. Programming scheme for improved voltage distribution in solid-state memory
KR102226367B1 (ko) * 2014-01-02 2021-03-12 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 불휘발성 메모리 시스템
KR102187637B1 (ko) * 2014-02-03 2020-12-07 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법
US10290342B2 (en) * 2014-08-22 2019-05-14 Alacrity Semiconductors, Inc. Methods and apparatus for memory programming
CN111857813A (zh) * 2015-05-18 2020-10-30 北京忆芯科技有限公司 调度微指令序列的方法及装置
US10332613B1 (en) 2015-05-18 2019-06-25 Microsemi Solutions (Us), Inc. Nonvolatile memory system with retention monitor
US9799405B1 (en) 2015-07-29 2017-10-24 Ip Gem Group, Llc Nonvolatile memory system with read circuit for performing reads using threshold voltage shift read instruction
KR102312404B1 (ko) * 2015-09-07 2021-10-13 에스케이하이닉스 주식회사 저장 장치 및 이의 동작 방법
KR102314137B1 (ko) * 2015-11-04 2021-10-18 삼성전자 주식회사 리커버리 동작을 선택적으로 수행하는 불휘발성 메모리 장치 및 그 동작방법
US9886214B2 (en) 2015-12-11 2018-02-06 Ip Gem Group, Llc Nonvolatile memory system with erase suspend circuit and method for erase suspend management
US9892794B2 (en) 2016-01-04 2018-02-13 Ip Gem Group, Llc Method and apparatus with program suspend using test mode
US9899092B2 (en) 2016-01-27 2018-02-20 Ip Gem Group, Llc Nonvolatile memory system with program step manager and method for program step management
US10291263B2 (en) 2016-07-28 2019-05-14 Ip Gem Group, Llc Auto-learning log likelihood ratio
US10283215B2 (en) 2016-07-28 2019-05-07 Ip Gem Group, Llc Nonvolatile memory system with background reference positioning and local reference positioning
US10236915B2 (en) 2016-07-29 2019-03-19 Microsemi Solutions (U.S.), Inc. Variable T BCH encoding
KR102639697B1 (ko) 2017-01-09 2024-02-21 삼성전자주식회사 비휘발성 메모리 장치 및 그 프로그램 방법
KR102447465B1 (ko) 2017-09-08 2022-09-27 삼성전자주식회사 호스트로부터의 읽기 요청에 대한 짧은 읽기 응답 시간을 제공하기 위해 내부 동작을 일시적으로 중단하는 스토리지 장치
KR102420161B1 (ko) 2017-12-01 2022-07-12 삼성전자주식회사 메모리 컨트롤러 및 그것의 제어 방법
CN111863096B (zh) * 2019-04-29 2022-08-30 北京兆易创新科技股份有限公司 一种NOR flash存储器读数据的方法和装置
KR20210012818A (ko) * 2019-07-26 2021-02-03 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
JP2021022414A (ja) * 2019-07-29 2021-02-18 キオクシア株式会社 半導体記憶装置
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
US11626163B2 (en) * 2021-09-02 2023-04-11 Micron Technology, Inc. Program voltage step based on program-suspend time

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318123A1 (de) * 1983-05-18 1984-11-22 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung mit einem datenspeicher und einer ansteuereinheit zum auslesen, schreiben und loeschen des speichers
JPS61169941A (ja) * 1985-01-22 1986-07-31 Sony Corp 記憶装置
US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
DE68913695T2 (de) * 1988-12-27 1994-10-20 Nec Corp Mikrorechner mit einem elektrisch löschbaren und programmierbaren nichtflüchtigen Speicher.
JP2636449B2 (ja) * 1988-12-27 1997-07-30 日本電気株式会社 マイクロコンピュータ
US4965828A (en) * 1989-04-05 1990-10-23 Quadri Corporation Non-volatile semiconductor memory with SCRAM hold cycle prior to SCRAM-to-E2 PROM backup transfer
EP0617363B1 (de) * 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH04221496A (ja) * 1990-03-29 1992-08-11 Intel Corp 単一基板上に設けられるコンピュータメモリ回路およびコンピュータメモリを消去するためのシーケンスを終らせる方法
AU8908691A (en) * 1990-10-12 1992-05-20 Intel Corporation Slow memory refresh in a computer with a limited supply of power
US5355464A (en) * 1991-02-11 1994-10-11 Intel Corporation Circuitry and method for suspending the automated erasure of a non-volatile semiconductor memory
JP3408552B2 (ja) * 1991-02-11 2003-05-19 インテル・コーポレーション 不揮発性半導体メモリをプログラム及び消去する回路とその方法
US5255314A (en) * 1991-03-29 1993-10-19 At&T Bell Laboratories Switch adjunct integration arrangement
US5542076A (en) * 1991-06-14 1996-07-30 Digital Equipment Corporation Method and apparatus for adaptive interrupt servicing in data processing system
JP2816062B2 (ja) * 1992-10-05 1998-10-27 株式会社東芝 メモリセルの情報の消去方法
US5351216A (en) * 1993-03-05 1994-09-27 Microchip Technology Incorporated Premature termination of microcontroller EEPROM write
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
US5424992A (en) * 1993-08-25 1995-06-13 Texas Instruments Incorporated, A Delaware Corporation Method and device for detecting and controlling an array source signal discharge for a memory erase operation
US5424993A (en) * 1993-11-15 1995-06-13 Micron Technology, Inc. Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
JPH07153286A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体不揮発性記憶装置
JPH07226097A (ja) * 1994-02-15 1995-08-22 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5742787A (en) * 1995-04-10 1998-04-21 Intel Corporation Hardware reset of a write state machine for flash memory
US5568644A (en) * 1995-05-05 1996-10-22 Apple Computer, Inc. Method and apparatus using a tree structure for the dispatching of interrupts
JPH09114678A (ja) * 1995-10-17 1997-05-02 Sanyo Electric Co Ltd マイクロコンピュータの割り込み処理装置
US5805929A (en) * 1996-01-29 1998-09-08 International Business Machines Corporation Multiple independent I/O functions on a PCMCIA card share a single interrupt request signal using an AND gate for triggering a delayed RESET signal
JPH09231065A (ja) * 1996-02-21 1997-09-05 Matsushita Electric Ind Co Ltd プログラム変更可能な電子制御装置
US5687121A (en) * 1996-03-29 1997-11-11 Aplus Integrated Circuits, Inc. Flash EEPROM worldline decoder

Also Published As

Publication number Publication date
CN1137440C (zh) 2004-02-04
EP0931289A2 (de) 1999-07-28
WO1998012704A3 (en) 1998-06-04
CN1238049A (zh) 1999-12-08
TW365659B (en) 1999-08-01
EP0931289B1 (de) 2003-11-19
KR20000036243A (ko) 2000-06-26
HK1021761A1 (en) 2000-06-30
US6148360A (en) 2000-11-14
WO1998012704A2 (en) 1998-03-26
US5937424A (en) 1999-08-10
EP0931289A4 (de) 2000-10-04
KR100328426B1 (ko) 2002-03-16
AU4428997A (en) 1998-04-14
DE69726304T2 (de) 2004-04-22

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