DE69827687D1 - Träger für integrierte Schaltung und seine Herstellung - Google Patents

Träger für integrierte Schaltung und seine Herstellung

Info

Publication number
DE69827687D1
DE69827687D1 DE69827687T DE69827687T DE69827687D1 DE 69827687 D1 DE69827687 D1 DE 69827687D1 DE 69827687 T DE69827687 T DE 69827687T DE 69827687 T DE69827687 T DE 69827687T DE 69827687 D1 DE69827687 D1 DE 69827687D1
Authority
DE
Germany
Prior art keywords
manufacture
integrated circuit
circuit carrier
carrier
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69827687T
Other languages
English (en)
Other versions
DE69827687T2 (de
Inventor
Hirokazu Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69827687D1 publication Critical patent/DE69827687D1/de
Publication of DE69827687T2 publication Critical patent/DE69827687T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16237Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
DE69827687T 1997-03-03 1998-03-03 Träger für integrierte Schaltung und seine Herstellung Expired - Fee Related DE69827687T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4829597 1997-03-03
JP04829597A JP3176307B2 (ja) 1997-03-03 1997-03-03 集積回路装置の実装構造およびその製造方法

Publications (2)

Publication Number Publication Date
DE69827687D1 true DE69827687D1 (de) 2004-12-30
DE69827687T2 DE69827687T2 (de) 2005-12-01

Family

ID=12799458

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69827687T Expired - Fee Related DE69827687T2 (de) 1997-03-03 1998-03-03 Träger für integrierte Schaltung und seine Herstellung

Country Status (5)

Country Link
US (2) US6037665A (de)
EP (1) EP0863548B1 (de)
JP (1) JP3176307B2 (de)
CA (1) CA2230903C (de)
DE (1) DE69827687T2 (de)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE207243T1 (de) * 1996-05-17 2001-11-15 Infineon Technologies Ag Trägerelement für einen halbleiterchip
JP2000208698A (ja) 1999-01-18 2000-07-28 Toshiba Corp 半導体装置
US6406939B1 (en) 1998-05-02 2002-06-18 Charles W. C. Lin Flip chip assembly with via interconnection
SG75841A1 (en) 1998-05-02 2000-10-24 Eriston Invest Pte Ltd Flip chip assembly with via interconnection
EP1202348A3 (de) * 1998-06-04 2004-05-12 Matsushita Electric Industrial Co., Ltd. Halbleiteranordnung und Verfahren zu deren Herstellung
JP3447961B2 (ja) * 1998-08-26 2003-09-16 富士通株式会社 半導体装置の製造方法及び半導体製造装置
TW522536B (en) 1998-12-17 2003-03-01 Wen-Chiang Lin Bumpless flip chip assembly with strips-in-via and plating
TW396462B (en) * 1998-12-17 2000-07-01 Eriston Technologies Pte Ltd Bumpless flip chip assembly with solder via
SG82590A1 (en) 1998-12-17 2001-08-21 Eriston Technologies Pte Ltd Bumpless flip chip assembly with strips and via-fill
US6388335B1 (en) * 1999-12-14 2002-05-14 Atmel Corporation Integrated circuit package formed at a wafer level
DE10014379A1 (de) 2000-03-23 2001-10-11 Infineon Technologies Ag Verfahren und Vorrichtung zum Verbinden mindestens eines Chips mit einer Umverdrahtungsanordnung
US6569753B1 (en) * 2000-06-08 2003-05-27 Micron Technology, Inc. Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same
US6551861B1 (en) 2000-08-22 2003-04-22 Charles W. C. Lin Method of making a semiconductor chip assembly by joining the chip to a support circuit with an adhesive
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6402970B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6403460B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a semiconductor chip assembly
US6436734B1 (en) 2000-08-22 2002-08-20 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6562709B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6660626B1 (en) 2000-08-22 2003-12-09 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6562657B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US7271491B1 (en) * 2000-08-31 2007-09-18 Micron Technology, Inc. Carrier for wafer-scale package and wafer-scale package including the carrier
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US6580165B1 (en) * 2000-11-16 2003-06-17 Fairchild Semiconductor Corporation Flip chip with solder pre-plated leadframe including locating holes
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
KR100384834B1 (ko) * 2001-03-30 2003-05-23 주식회사 하이닉스반도체 다중 기판 상에 형성되는 반도체 장치 및 그 제조 방법
SG104293A1 (en) 2002-01-09 2004-06-21 Micron Technology Inc Elimination of rdl using tape base flip chip on flex for die stacking
SG115455A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Methods for assembly and packaging of flip chip configured dice with interposer
SG115456A1 (en) 2002-03-04 2005-10-28 Micron Technology Inc Semiconductor die packages with recessed interconnecting structures and methods for assembling the same
SG111935A1 (en) 2002-03-04 2005-06-29 Micron Technology Inc Interposer configured to reduce the profiles of semiconductor device assemblies and packages including the same and methods
SG115459A1 (en) * 2002-03-04 2005-10-28 Micron Technology Inc Flip chip packaging using recessed interposer terminals
SG121707A1 (en) * 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
US20040036170A1 (en) * 2002-08-20 2004-02-26 Lee Teck Kheng Double bumping of flexible substrate for first and second level interconnects
US20040088855A1 (en) * 2002-11-11 2004-05-13 Salman Akram Interposers for chip-scale packages, chip-scale packages including the interposers, test apparatus for effecting wafer-level testing of the chip-scale packages, and methods
US7147141B2 (en) * 2002-11-13 2006-12-12 Intel Corporation Preconditioning via plug material for a via-in-pad ball grid array package
FI20031341A (fi) 2003-09-18 2005-03-19 Imbera Electronics Oy Menetelmä elektroniikkamoduulin valmistamiseksi
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
FI117814B (fi) * 2004-06-15 2007-02-28 Imbera Electronics Oy Menetelmä elektroniikkamoduulin valmistamiseksi
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
FR2884049B1 (fr) * 2005-04-01 2007-06-22 3D Plus Sa Sa Module electronique de faible epaisseur comprenant un empilement de boitiers electroniques a billes de connexion
US20060281303A1 (en) * 2005-06-14 2006-12-14 John Trezza Tack & fuse chip bonding
US7838997B2 (en) * 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7942182B2 (en) * 2005-06-14 2011-05-17 Cufer Asset Ltd. L.L.C. Rigid-backed, membrane-based chip tooling
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US7687400B2 (en) * 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US7560813B2 (en) * 2005-06-14 2009-07-14 John Trezza Chip-based thermo-stack
US7851348B2 (en) * 2005-06-14 2010-12-14 Abhay Misra Routingless chip architecture
US7521806B2 (en) * 2005-06-14 2009-04-21 John Trezza Chip spanning connection
US7781886B2 (en) * 2005-06-14 2010-08-24 John Trezza Electronic chip contact structure
US7534722B2 (en) * 2005-06-14 2009-05-19 John Trezza Back-to-front via process
US8456015B2 (en) * 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7215032B2 (en) 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US20060278996A1 (en) * 2005-06-14 2006-12-14 John Trezza Active packaging
FI119714B (fi) 2005-06-16 2009-02-13 Imbera Electronics Oy Piirilevyrakenne ja menetelmä piirilevyrakenteen valmistamiseksi
JP2008544512A (ja) * 2005-06-16 2008-12-04 イムベラ エレクトロニクス オサケユキチュア 回路基板構造体およびその製造方法
FI122128B (fi) * 2005-06-16 2011-08-31 Imbera Electronics Oy Menetelmä piirilevyrakenteen valmistamiseksi
US20070281460A1 (en) * 2006-06-06 2007-12-06 Cubic Wafer, Inc. Front-end processed wafer having through-chip connections
US7687397B2 (en) * 2006-06-06 2010-03-30 John Trezza Front-end processed wafer having through-chip connections
KR101175393B1 (ko) * 2006-10-17 2012-08-20 쿠퍼 에셋 엘티디. 엘.엘.씨. 웨이퍼 비아 형성
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
KR101332861B1 (ko) * 2007-01-03 2013-11-22 삼성전자주식회사 아이씨 패키지 및 그 제조방법
US7705613B2 (en) * 2007-01-03 2010-04-27 Abhay Misra Sensitivity capacitive sensor
US7598163B2 (en) * 2007-02-15 2009-10-06 John Callahan Post-seed deposition process
US7705632B2 (en) * 2007-02-15 2010-04-27 Wyman Theodore J Ted Variable off-chip drive
US7803693B2 (en) * 2007-02-15 2010-09-28 John Trezza Bowed wafer hybridization compensation
US7670874B2 (en) * 2007-02-16 2010-03-02 John Trezza Plated pillar package formation
US7747223B2 (en) * 2007-03-29 2010-06-29 Research In Motion Limited Method, system and mobile device for prioritizing a discovered device list
US7850060B2 (en) * 2007-04-05 2010-12-14 John Trezza Heat cycle-able connection
US7748116B2 (en) * 2007-04-05 2010-07-06 John Trezza Mobile binding in an electronic connection
US7960210B2 (en) * 2007-04-23 2011-06-14 Cufer Asset Ltd. L.L.C. Ultra-thin chip packaging
US20080261392A1 (en) * 2007-04-23 2008-10-23 John Trezza Conductive via formation
WO2011154062A1 (fr) * 2010-06-08 2011-12-15 Johnson Controls Technology Company Raccordement electrique entre un element de support et un element electrique, methode de fabrication d'un raccordement electrique, element de support et element electrique
US8946072B2 (en) * 2012-02-02 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. No-flow underfill for package with interposer frame
US9691636B2 (en) * 2012-02-02 2017-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Interposer frame and method of manufacturing the same
KR20140059489A (ko) * 2012-11-08 2014-05-16 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US9159652B2 (en) 2013-02-25 2015-10-13 Stmicroelectronics S.R.L. Electronic device comprising at least a chip enclosed in a package and a corresponding assembly process
US10867959B2 (en) * 2016-11-30 2020-12-15 Shenzhen Xiuyuan Electronic Technology Co., Ltd Integrated circuit packaging method and integrated packaged circuit
WO2018098648A1 (zh) * 2016-11-30 2018-06-07 深圳修远电子科技有限公司 集成电路封装方法以及集成封装电路
IT201700073501A1 (it) * 2017-06-30 2018-12-30 St Microelectronics Srl Prodotto a semiconduttore e corrispondente procedimento
US20210358883A1 (en) * 2018-10-11 2021-11-18 Shenzhen Xiuyi Investment Development Partnership (Limited Partnership) Fan-out packaging method employing combined process
JP7102481B2 (ja) * 2020-10-09 2022-07-19 Nissha株式会社 射出成形品及びその製造方法
US11948807B2 (en) 2021-03-30 2024-04-02 International Business Machines Corporation Feature selection through solder-ball population
US11963307B2 (en) * 2021-03-30 2024-04-16 International Business Machines Corporation Vacuum-assisted BGA joint formation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738401B2 (ja) * 1986-10-13 1995-04-26 株式会社日立製作所 Lsiチツプ実装構造体
JPH02168662A (ja) 1988-09-07 1990-06-28 Hitachi Ltd チップキャリア
US5148265A (en) * 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
DE69118308T2 (de) * 1990-10-24 1996-08-08 Nec Corp Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung
WO1992021150A1 (en) * 1991-05-23 1992-11-26 Motorola, Inc. Integrated circuit chip carrier
US5489750A (en) * 1993-03-11 1996-02-06 Matsushita Electric Industrial Co., Ltd. Method of mounting an electronic part with bumps on a circuit board
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
JPH088293A (ja) * 1994-06-16 1996-01-12 Casio Comput Co Ltd 電子部品の接続構造およびその接続方法
US5742100A (en) * 1995-03-27 1998-04-21 Motorola, Inc. Structure having flip-chip connected substrates
JPH08316271A (ja) * 1995-05-12 1996-11-29 Nitto Denko Corp フィルムキャリアおよびこれを用いた半導体装置
JPH0945805A (ja) * 1995-07-31 1997-02-14 Fujitsu Ltd 配線基板、半導体装置及び半導体装置を配線基板から取り外す方法並びに半導体装置の製造方法
US5971253A (en) * 1995-07-31 1999-10-26 Tessera, Inc. Microelectronic component mounting with deformable shell terminals
US5784262A (en) * 1995-11-06 1998-07-21 Symbios, Inc. Arrangement of pads and through-holes for semiconductor packages
JP3610999B2 (ja) * 1996-06-07 2005-01-19 松下電器産業株式会社 半導体素子の実装方法

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CA2230903A1 (en) 1998-09-03
US6297141B1 (en) 2001-10-02
JP3176307B2 (ja) 2001-06-18
DE69827687T2 (de) 2005-12-01
CA2230903C (en) 2002-09-03
EP0863548B1 (de) 2004-11-24
US6037665A (en) 2000-03-14
EP0863548A2 (de) 1998-09-09
JPH10242210A (ja) 1998-09-11
EP0863548A3 (de) 1999-04-14

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