DE69830883D1 - Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte - Google Patents

Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte

Info

Publication number
DE69830883D1
DE69830883D1 DE69830883T DE69830883T DE69830883D1 DE 69830883 D1 DE69830883 D1 DE 69830883D1 DE 69830883 T DE69830883 T DE 69830883T DE 69830883 T DE69830883 T DE 69830883T DE 69830883 D1 DE69830883 D1 DE 69830883D1
Authority
DE
Germany
Prior art keywords
circuit board
semiconductor device
device circuit
semiconductor
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69830883T
Other languages
English (en)
Other versions
DE69830883T2 (de
Inventor
Nobuaki Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69830883D1 publication Critical patent/DE69830883D1/de
Application granted granted Critical
Publication of DE69830883T2 publication Critical patent/DE69830883T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06524—Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
DE69830883T 1997-03-10 1998-03-10 Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte Expired - Fee Related DE69830883T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7261497 1997-03-10
JP7261497 1997-03-10
PCT/JP1998/000973 WO1998040915A1 (fr) 1997-03-10 1998-03-10 Composant electronique et dispositif a semi-conducteurs, procede de fabrication correspondant, carte a circuit imprime ainsi equipee, et equipement electronique comportant cette carte a circuit imprime

Publications (2)

Publication Number Publication Date
DE69830883D1 true DE69830883D1 (de) 2005-08-25
DE69830883T2 DE69830883T2 (de) 2006-04-20

Family

ID=13494452

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69830883T Expired - Fee Related DE69830883T2 (de) 1997-03-10 1998-03-10 Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte

Country Status (8)

Country Link
US (8) US6515370B2 (de)
EP (3) EP1427016A3 (de)
JP (2) JP3963484B2 (de)
KR (1) KR100563585B1 (de)
AU (1) AU6121598A (de)
DE (1) DE69830883T2 (de)
TW (1) TW392262B (de)
WO (1) WO1998040915A1 (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870272B2 (en) * 1994-09-20 2005-03-22 Tessera, Inc. Methods of making microelectronic assemblies including compliant interfaces
US6284563B1 (en) 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US6211572B1 (en) 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
TW448524B (en) 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
US6515370B2 (en) 1997-03-10 2003-02-04 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing the same, circuit board have the same mounted thereon, and electronic equipment having the circuit board
JP3661444B2 (ja) * 1998-10-28 2005-06-15 株式会社ルネサステクノロジ 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法
JP4822019B2 (ja) * 1999-03-25 2011-11-24 セイコーエプソン株式会社 配線基板、半導体装置及びこれらの製造方法、回路基板並びに電子機器
KR100319624B1 (ko) * 1999-05-20 2002-01-09 김영환 반도체 칩 패키지 및 그 제조방법
US6228687B1 (en) * 1999-06-28 2001-05-08 Micron Technology, Inc. Wafer-level package and methods of fabricating
JP3526788B2 (ja) * 1999-07-01 2004-05-17 沖電気工業株式会社 半導体装置の製造方法
US6770547B1 (en) * 1999-10-29 2004-08-03 Renesas Technology Corporation Method for producing a semiconductor device
JP2001320014A (ja) * 2000-05-11 2001-11-16 Seiko Epson Corp 半導体装置及びその製造方法
US7247932B1 (en) 2000-05-19 2007-07-24 Megica Corporation Chip package with capacitor
JP2002050716A (ja) * 2000-08-02 2002-02-15 Dainippon Printing Co Ltd 半導体装置及びその作製方法
US6862189B2 (en) * 2000-09-26 2005-03-01 Kabushiki Kaisha Toshiba Electronic component, circuit device, method for manufacturing the circuit device, and semiconductor device
JP4505983B2 (ja) * 2000-12-01 2010-07-21 日本電気株式会社 半導体装置
JP4051893B2 (ja) * 2001-04-18 2008-02-27 株式会社日立製作所 電子機器
JP4149377B2 (ja) 2001-06-07 2008-09-10 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4631223B2 (ja) * 2001-07-04 2011-02-16 パナソニック株式会社 半導体実装体およびそれを用いた半導体装置
JP4917225B2 (ja) * 2001-09-28 2012-04-18 ローム株式会社 半導体装置
US6777648B2 (en) * 2002-01-11 2004-08-17 Intel Corporation Method and system to manufacture stacked chip devices
JP2003243604A (ja) * 2002-02-13 2003-08-29 Sony Corp 電子部品及び電子部品の製造方法
US7423336B2 (en) * 2002-04-08 2008-09-09 Micron Technology, Inc. Bond pad rerouting element, rerouted semiconductor devices including the rerouting element, and assemblies including the rerouted semiconductor devices
US20050104211A1 (en) * 2002-05-07 2005-05-19 Shinji Baba Semiconductor device having semiconductor chips mounted on package substrate
JP2003324183A (ja) * 2002-05-07 2003-11-14 Mitsubishi Electric Corp 半導体装置
JP3529050B2 (ja) 2002-07-12 2004-05-24 沖電気工業株式会社 半導体装置の製造方法
US6964881B2 (en) * 2002-08-27 2005-11-15 Micron Technology, Inc. Multi-chip wafer level system packages and methods of forming same
WO2004049439A1 (ja) * 2002-11-26 2004-06-10 Renesas Technology Corp. 半導体装置
TW569416B (en) * 2002-12-19 2004-01-01 Via Tech Inc High density multi-chip module structure and manufacturing method thereof
US7253510B2 (en) * 2003-01-16 2007-08-07 International Business Machines Corporation Ball grid array package construction with raised solder ball pads
US20040187976A1 (en) * 2003-03-31 2004-09-30 Fay Hua Phase change lead-free super plastic solders
US20050029675A1 (en) * 2003-03-31 2005-02-10 Fay Hua Tin/indium lead-free solders for low stress chip attachment
JP3968051B2 (ja) * 2003-05-14 2007-08-29 富士通株式会社 半導体装置とその製造方法、および半導体装置前駆体とその製造方法
US20040262728A1 (en) * 2003-06-30 2004-12-30 Sterrett Terry L. Modular device assemblies
DE10345391B3 (de) * 2003-09-30 2005-02-17 Infineon Technologies Ag Verfahren zur Herstellung eines Multi-Chip-Moduls und Multi-Chip-Modul
TW200520123A (en) * 2003-10-07 2005-06-16 Matsushita Electric Ind Co Ltd Method for mounting semiconductor chip and semiconductor chip-mounted board
US7060601B2 (en) * 2003-12-17 2006-06-13 Tru-Si Technologies, Inc. Packaging substrates for integrated circuits and soldering methods
US7049170B2 (en) * 2003-12-17 2006-05-23 Tru-Si Technologies, Inc. Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities
TW200721932A (en) * 2004-01-30 2007-06-01 Hitachi Chemical Co Ltd Adhesion assisting agent-bearing metal foil, printed wiring board, and production method of printed wiring board
EP1739739A4 (de) * 2004-03-26 2010-02-24 Fujikura Ltd Durchverdrahtungs-board und herstellungsverfahren dafür
JP2006041401A (ja) * 2004-07-29 2006-02-09 Sharp Corp 半導体装置及びその製造方法
US20060038272A1 (en) * 2004-08-17 2006-02-23 Texas Instruments Incorporated Stacked wafer scale package
JP2006303408A (ja) * 2004-09-09 2006-11-02 Seiko Epson Corp 電子装置及びその製造方法
JP2006100385A (ja) 2004-09-28 2006-04-13 Rohm Co Ltd 半導体装置
US11842972B2 (en) 2004-09-28 2023-12-12 Rohm Co., Ltd. Semiconductor device with a semiconductor chip connected in a flip chip manner
JP2006179570A (ja) * 2004-12-21 2006-07-06 Renesas Technology Corp 半導体装置の製造方法
EP1851798B1 (de) 2005-02-25 2016-08-03 Tessera, Inc. Mikroelektronische baugruppe mit nachgiebigkeit
JP4142041B2 (ja) * 2005-03-23 2008-08-27 セイコーエプソン株式会社 半導体装置の製造方法
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7354800B2 (en) * 2005-04-29 2008-04-08 Stats Chippac Ltd. Method of fabricating a stacked integrated circuit package system
US7470927B2 (en) * 2005-05-18 2008-12-30 Megica Corporation Semiconductor chip with coil element over passivation layer
JP4548264B2 (ja) * 2005-08-01 2010-09-22 株式会社デンソー 車両用交流発電機
KR100893558B1 (ko) * 2005-08-10 2009-04-17 세이코 엡슨 가부시키가이샤 반도체 장치, 반도체 장치의 제조 방법 및 전자 부품
JP4289335B2 (ja) 2005-08-10 2009-07-01 セイコーエプソン株式会社 電子部品、回路基板及び電子機器
US7456088B2 (en) 2006-01-04 2008-11-25 Stats Chippac Ltd. Integrated circuit package system including stacked die
US7768125B2 (en) * 2006-01-04 2010-08-03 Stats Chippac Ltd. Multi-chip package system
US7750482B2 (en) 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
US8704349B2 (en) 2006-02-14 2014-04-22 Stats Chippac Ltd. Integrated circuit package system with exposed interconnects
US7385299B2 (en) * 2006-02-25 2008-06-10 Stats Chippac Ltd. Stackable integrated circuit package system with multiple interconnect interface
US7915081B2 (en) 2006-03-31 2011-03-29 Intel Corporation Flexible interconnect pattern on semiconductor package
JP5177625B2 (ja) 2006-07-11 2013-04-03 独立行政法人産業技術総合研究所 半導体チップの電極接続構造および導電部材、並びに半導体装置およびその製造方法
US7538429B2 (en) * 2006-08-21 2009-05-26 Intel Corporation Method of enabling solder deposition on a substrate and electronic package formed thereby
US20080054496A1 (en) 2006-08-30 2008-03-06 Neill Thornton High temperature operating package and circuit design
TWI414580B (zh) 2006-10-31 2013-11-11 Sumitomo Bakelite Co 黏著帶及使用該黏著帶而成之半導體裝置
US7749886B2 (en) 2006-12-20 2010-07-06 Tessera, Inc. Microelectronic assemblies having compliancy and methods therefor
US20090032972A1 (en) * 2007-03-30 2009-02-05 Kabushiki Kaisha Toshiba Semiconductor device
TWI368978B (en) * 2007-09-21 2012-07-21 Unimicron Technology Corp Method for fabricating ball-implantation side surface structure of package substrate
US20090102050A1 (en) * 2007-10-17 2009-04-23 Phoenix Precision Technology Corporation Solder ball disposing surface structure of package substrate
KR20090042574A (ko) * 2007-10-26 2009-04-30 삼성전자주식회사 반도체 모듈 및 이를 구비하는 전자 장치
JP4759582B2 (ja) 2008-02-15 2011-08-31 Ｏｋｉセミコンダクタ株式会社 半導体デバイスの製造方法及び半導体デバイス
DE102008039360B4 (de) * 2008-08-22 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP4881369B2 (ja) * 2008-12-24 2012-02-22 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5170134B2 (ja) * 2010-03-16 2013-03-27 日本電気株式会社 半導体装置及びその製造方法
JP5271402B2 (ja) * 2011-10-31 2013-08-21 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US20130228916A1 (en) * 2012-03-02 2013-09-05 Texas Instruments Incorporated Two-solder method for self-aligning solder bumps in semiconductor assembly
US11213690B2 (en) * 2012-06-15 2022-01-04 Medtronic, Inc. Wafer level packages of high voltage units for implantable medical devices
US10479474B2 (en) * 2016-07-14 2019-11-19 The Boeing Company Friction stir welded wingtip torque box
US10950511B2 (en) 2018-10-30 2021-03-16 Medtronic, Inc. Die carrier package and method of forming same
CN113557556B (zh) * 2019-03-13 2023-09-08 公立大学法人公立诹访东京理科大学 头部佩戴装置、中暑预防系统以及水分补充警告系统
US11404365B2 (en) * 2019-05-07 2022-08-02 International Business Machines Corporation Direct attachment of capacitors to flip chip dies
CN112201647A (zh) * 2020-09-09 2021-01-08 苏州通富超威半导体有限公司 一种高密度互连芯片结构
JP2022129553A (ja) * 2021-02-25 2022-09-06 セイコーエプソン株式会社 センサーモジュール

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US376825A (en) * 1888-01-24 Painter s combination pot-hook
US573974A (en) * 1896-12-29 henery
JPS5337383A (en) 1976-09-20 1978-04-06 Hitachi Ltd Semiconductor integrated circuit
JPS5339068A (en) 1976-09-22 1978-04-10 Hitachi Ltd Semiconductor device
JPS58140143A (ja) * 1982-02-15 1983-08-19 Seiko Epson Corp 複合型半導体装置
JPS5952859A (ja) * 1982-09-20 1984-03-27 Nec Corp 半導体装置
JPS5988863A (ja) * 1982-11-12 1984-05-22 Matsushita Electric Ind Co Ltd 半導体装置
JPS59218744A (ja) 1983-05-27 1984-12-10 Hitachi Ltd ボンデイング方法
JPS60150668A (ja) 1984-01-18 1985-08-08 Seiko Epson Corp 半導体装置
JPS59210649A (ja) 1984-05-07 1984-11-29 Hitachi Ltd 半導体装置の実装構造
JPS6189657A (ja) * 1984-10-08 1986-05-07 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS63142663A (ja) 1986-12-04 1988-06-15 Sharp Corp 半導体装置とその製造方法
JPH01209746A (ja) 1988-02-17 1989-08-23 Nec Corp 半導体装置
JPH0750759B2 (ja) * 1988-07-01 1995-05-31 シャープ株式会社 半導体装置
JPH02241045A (ja) 1989-03-15 1990-09-25 Matsushita Electric Works Ltd 半導体装置およびその製造方法
US5399898A (en) 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
JPH0442957A (ja) * 1990-06-06 1992-02-13 Matsushita Electron Corp 半導体集積回路装置の製造方法
US5148265A (en) * 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5136365A (en) 1990-09-27 1992-08-04 Motorola, Inc. Anisotropic conductive adhesive and encapsulant material
JP2876773B2 (ja) 1990-10-22 1999-03-31 セイコーエプソン株式会社 プログラム命令語長可変型計算装置及びデータ処理装置
US5173764A (en) * 1991-04-08 1992-12-22 Motorola, Inc. Semiconductor device having a particular lid means and encapsulant to reduce die stress
JP3016910B2 (ja) * 1991-07-19 2000-03-06 富士通株式会社 半導体モジュール構造
JPH05129373A (ja) 1991-10-31 1993-05-25 Nec Corp 半導体装置及びその製造方法
JPH05129516A (ja) 1991-11-01 1993-05-25 Hitachi Ltd 半導体装置
JP3119927B2 (ja) 1992-03-18 2000-12-25 株式会社東芝 半導体装置
JP3339881B2 (ja) 1992-07-16 2002-10-28 株式会社日立製作所 半導体集積回路装置およびその製造方法
JPH06209071A (ja) 1993-01-12 1994-07-26 Sharp Corp 樹脂封止半導体装置およびその製造方法
JPH06224334A (ja) 1993-01-26 1994-08-12 Hitachi Ltd マルチチップモジュール
US5477611A (en) 1993-09-20 1995-12-26 Tessera, Inc. Method of forming interface between die and chip carrier
US5366933A (en) * 1993-10-13 1994-11-22 Intel Corporation Method for constructing a dual sided, wire bonded integrated circuit chip package
JPH07263620A (ja) 1994-03-22 1995-10-13 Hitachi Ltd 半導体装置
US5776796A (en) * 1994-05-19 1998-07-07 Tessera, Inc. Method of encapsulating a semiconductor package
JP3278533B2 (ja) 1994-07-28 2002-04-30 三菱電機株式会社 樹脂封止型半導体装置の製造方法
JPH0864049A (ja) 1994-08-19 1996-03-08 Takaoka Electric Mfg Co Ltd 傾斜ブラシ式碍子清掃装置
JP2616565B2 (ja) * 1994-09-12 1997-06-04 日本電気株式会社 電子部品組立体
JPH08115174A (ja) * 1994-10-17 1996-05-07 Nippon Telegr & Teleph Corp <Ntt> ライブラリ装置のデータアクセス制御方法
JP3259562B2 (ja) 1995-01-27 2002-02-25 富士電機株式会社 バンプ付き半導体装置の製造方法
JP3186941B2 (ja) 1995-02-07 2001-07-11 シャープ株式会社 半導体チップおよびマルチチップ半導体モジュール
JPH08222571A (ja) 1995-02-13 1996-08-30 Sony Corp フリップチップｉｃとその製造方法
JP3356921B2 (ja) 1995-03-24 2002-12-16 新光電気工業株式会社 半導体装置およびその製造方法
JPH08279591A (ja) 1995-04-07 1996-10-22 Nec Corp 半導体装置とその製造方法
TW520816U (en) 1995-04-24 2003-02-11 Matsushita Electric Ind Co Ltd Semiconductor device
JP3211659B2 (ja) 1995-04-24 2001-09-25 松下電器産業株式会社 半導体装置およびその製造方法
US5721452A (en) * 1995-08-16 1998-02-24 Micron Technology, Inc. Angularly offset stacked die multichip device and method of manufacture
US5777379A (en) * 1995-08-18 1998-07-07 Tessera, Inc. Semiconductor assemblies with reinforced peripheral regions
JP3313547B2 (ja) 1995-08-30 2002-08-12 沖電気工業株式会社 チップサイズパッケージの製造方法
KR0182073B1 (ko) * 1995-12-22 1999-03-20 황인길 반도체 칩 스케일 반도체 패키지 및 그 제조방법
KR100443484B1 (ko) * 1996-02-19 2004-09-18 마츠시타 덴끼 산교 가부시키가이샤 반도체장치및그제조방법
JP3262728B2 (ja) 1996-02-19 2002-03-04 松下電器産業株式会社 半導体装置及びその製造方法
US5917242A (en) * 1996-05-20 1999-06-29 Micron Technology, Inc. Combination of semiconductor interconnect
US5677567A (en) * 1996-06-17 1997-10-14 Micron Technology, Inc. Leads between chips assembly
US5990545A (en) * 1996-12-02 1999-11-23 3M Innovative Properties Company Chip scale ball grid array for integrated circuit package
US6054337A (en) * 1996-12-13 2000-04-25 Tessera, Inc. Method of making a compliant multichip package
US6057598A (en) * 1997-01-31 2000-05-02 Vlsi Technology, Inc. Face on face flip chip integration
US6515370B2 (en) * 1997-03-10 2003-02-04 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing the same, circuit board have the same mounted thereon, and electronic equipment having the circuit board
US5898223A (en) * 1997-10-08 1999-04-27 Lucent Technologies Inc. Chip-on-chip IC packages
JP4158565B2 (ja) 2003-03-18 2008-10-01 日産自動車株式会社 内燃機関の触媒劣化診断装置

Also Published As

Publication number Publication date
JP3963484B2 (ja) 2007-08-22
EP1447849A2 (de) 2004-08-18
US6803663B2 (en) 2004-10-12
EP0913866A1 (de) 1999-05-06
US7932612B2 (en) 2011-04-26
TW392262B (en) 2000-06-01
US20030116859A1 (en) 2003-06-26
US7119445B2 (en) 2006-10-10
DE69830883T2 (de) 2006-04-20
US20110180927A1 (en) 2011-07-28
US6515370B2 (en) 2003-02-04
US7598619B2 (en) 2009-10-06
US8134237B2 (en) 2012-03-13
US20090302467A1 (en) 2009-12-10
KR100563585B1 (ko) 2006-03-22
JP4973878B2 (ja) 2012-07-11
US20050023652A1 (en) 2005-02-03
AU6121598A (en) 1998-09-29
EP1447849A3 (de) 2005-07-20
US6989605B2 (en) 2006-01-24
US7436071B2 (en) 2008-10-14
US20060284320A1 (en) 2006-12-21
US20020024124A1 (en) 2002-02-28
EP1427016A2 (de) 2004-06-09
WO1998040915A1 (fr) 1998-09-17
EP0913866B1 (de) 2005-07-20
US20090026631A1 (en) 2009-01-29
KR20050026049A (ko) 2005-03-14
EP0913866A4 (de) 2000-03-22
US20060065968A1 (en) 2006-03-30
JP2009010436A (ja) 2009-01-15
EP1427016A3 (de) 2005-07-20

Similar Documents

Publication Publication Date Title
DE69830883D1 (de) Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte
DE69832359D1 (de) Halbleitervorrichtung -anordnung und -schaltungen
DE69827863D1 (de) Integriertes Halbleiterschaltkreisbauelement
DE69812570T2 (de) Gerät mit Leiterplatte und dessen Zusammenbauverfahren
DE69729673D1 (de) Chipträger und Halbleiteranordnung mit diesem Chipträger
SG68687A1 (en) Semiconductor integrated circuit device
SG68683A1 (en) Semiconductor integrated circuit device
DE69824972D1 (de) Integrierter halbleiterschaltkreis
DE69830962D1 (de) Integrierte Halbleiterschaltungsanordnung
SG76582A1 (en) Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit
DE69841264D1 (de) Elektronisches Gerät
DE69830772D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69825668D1 (de) Ultraschallmotor und mit diesem Ultraschallmotor ausgerüstetes elektronisches Gerät
DE69809623T2 (de) Logische MOS-Schaltung und Halbleitervorrichtung
FI19991946A (fi) Piiri puolijohdekytkinlaitteen estotilan saattamiseksi ylivirtatapauksessa
DE69502546T2 (de) Schalteinrichtung und mit der Schalteinrichtung ausgestattete elektronische Geräte
DE69837135D1 (de) Integrierte Halbleiterschaltungsanordnung
TW540827U (en) Semiconductor integrated circuit device
KR970004347A (ko) 반도체 집적회로 장치
DE69728919D1 (de) Schaltungsplatine und Halbleiterbauteil mit dieser
DE69830878D1 (de) Integrierte Halbleiterschaltungsanordnung
DE29715925U1 (de) Schaltungsvorrichtung
SG65738A1 (en) Semiconductor device and electronic device having the same
DE69838660D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69823574D1 (de) Halbleitervorrichtung, Leiterplatte und deren Kombination

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee