DE69836308D1 - Halbleiterschaltung mit Kompensation für Verzerrungen aufgrund von Umgebungstemperaturveränderungen - Google Patents

Halbleiterschaltung mit Kompensation für Verzerrungen aufgrund von Umgebungstemperaturveränderungen

Info

Publication number
DE69836308D1
DE69836308D1 DE69836308T DE69836308T DE69836308D1 DE 69836308 D1 DE69836308 D1 DE 69836308D1 DE 69836308 T DE69836308 T DE 69836308T DE 69836308 T DE69836308 T DE 69836308T DE 69836308 D1 DE69836308 D1 DE 69836308D1
Authority
DE
Germany
Prior art keywords
compensation
ambient temperature
temperature changes
semiconductor circuit
distortion due
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69836308T
Other languages
English (en)
Other versions
DE69836308T2 (de
Inventor
Yuji Kakuta
Yoshiaki Fukasawa
Yuichi Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Publication of DE69836308D1 publication Critical patent/DE69836308D1/de
Application granted granted Critical
Publication of DE69836308T2 publication Critical patent/DE69836308T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
DE69836308T 1997-11-27 1998-11-26 Halbleiterschaltung mit Kompensation für Verzerrungen aufgrund von Umgebungstemperaturveränderungen Expired - Fee Related DE69836308T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32644497 1997-11-27
JP32644497 1997-11-27

Publications (2)

Publication Number Publication Date
DE69836308D1 true DE69836308D1 (de) 2006-12-14
DE69836308T2 DE69836308T2 (de) 2007-06-06

Family

ID=18187882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836308T Expired - Fee Related DE69836308T2 (de) 1997-11-27 1998-11-26 Halbleiterschaltung mit Kompensation für Verzerrungen aufgrund von Umgebungstemperaturveränderungen

Country Status (5)

Country Link
US (2) US6437634B1 (de)
EP (1) EP0920123B1 (de)
KR (1) KR100330954B1 (de)
CN (1) CN1093335C (de)
DE (1) DE69836308T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6496069B1 (en) * 1999-10-01 2002-12-17 Koninklijke Philips Electronics N.V. Cascode circuit capable of contributing a comparatively low intermodulation distortion in the amplified signals
JP3790704B2 (ja) * 2001-12-18 2006-06-28 三菱電機株式会社 高周波信号用トランジスタの位相調整回路、及び、半導体集積回路
CN100407572C (zh) * 2004-08-02 2008-07-30 阎跃军 场效应管偏置电路
US7443225B2 (en) * 2006-06-30 2008-10-28 Alpha & Omega Semiconductor, Ltd. Thermally stable semiconductor power device
JP4425262B2 (ja) * 2006-12-07 2010-03-03 株式会社日立国際電気 フィードフォワード増幅器
CN101345512B (zh) * 2008-07-08 2010-09-29 无锡友达电子有限公司 利用集电极穿透电流监测功率管结温进行过温保护的方法
TW201003356A (en) * 2008-07-10 2010-01-16 Mobien Corp Resistor device and circuit using the same
US9667063B1 (en) * 2016-02-19 2017-05-30 Wilsun Xu Harmonic filter for multipulse converter systems
US10003322B2 (en) * 2016-10-06 2018-06-19 Psemi Corporation Temperature compensated digital step attenuator
CN108287587B (zh) * 2018-01-16 2021-01-26 成都京东方光电科技有限公司 温度补偿电路及显示装置
CN116526985B (zh) * 2023-03-13 2023-09-01 成都天成电科科技有限公司 一种温度补偿电路及射频功率放大器芯片

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011518A (en) 1975-10-28 1977-03-08 The United States Of America As Represented By The Secretary Of The Navy Microwave GaAs FET amplifier circuit
US4207538A (en) 1978-08-29 1980-06-10 Rca Corporation Temperature compensation circuit
JPS5564405A (en) 1978-11-08 1980-05-15 Seiko Instr & Electronics Ltd Receiver circuit with temperature compensating function
JPS56153810A (en) 1980-04-28 1981-11-28 Fujitsu Ltd Electric circuit having temperature compensating function
EP0108409B1 (de) 1980-04-28 1987-03-25 Fujitsu Limited Generatorschaltung einer Temperaturkompensationsspannung
JPS57157606A (en) 1981-03-24 1982-09-29 Nec Corp Fet amplifier
JPS6291008A (ja) 1985-10-17 1987-04-25 Nec Corp Ｆｅｔ増幅器
DE3612809A1 (de) * 1986-04-16 1987-10-22 Bosch Gmbh Robert Schaltungsanordnung zur erzeugung eines von der temperatur nichtlinear abhaengigen ausgangssignals
US4760285A (en) * 1987-03-30 1988-07-26 Honeywell Inc. Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity
US4853646A (en) 1988-07-19 1989-08-01 Fairchild Semiconductor Corporation Temperature compensated bipolar circuits
US4905056A (en) * 1988-09-30 1990-02-27 Berndt Dale F Superlattice precision voltage reference
FR2641127B1 (de) * 1988-12-23 1993-12-24 Thomson Hybrides Microondes
JPH03283458A (ja) 1990-03-30 1991-12-13 Hitachi Ltd Ｉｃの温度補償回路
US5408697A (en) 1993-06-14 1995-04-18 Qualcomm Incorporated Temperature-compensated gain-controlled amplifier having a wide linear dynamic range
JPH0746082A (ja) * 1993-07-30 1995-02-14 Nippondenso Co Ltd フィルタ回路
CA2150502A1 (en) * 1994-08-05 1996-02-06 Michael F. Mattes Method and apparatus for measuring temperature
US5742205A (en) 1995-07-27 1998-04-21 Scientific-Atlanta, Inc. Field effect transistor cable television line amplifier
WO1997035390A1 (en) * 1996-03-20 1997-09-25 Philips Electronics N.V. Predistortion circuit for an analog signal in a video communication network

Also Published As

Publication number Publication date
KR100330954B1 (ko) 2002-06-20
CN1093335C (zh) 2002-10-23
EP0920123B1 (de) 2006-11-02
EP0920123A3 (de) 2001-10-17
DE69836308T2 (de) 2007-06-06
EP0920123A2 (de) 1999-06-02
CN1219024A (zh) 1999-06-09
KR19990045611A (ko) 1999-06-25
US6437634B1 (en) 2002-08-20
US6278313B1 (en) 2001-08-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee