US6160281A
(en)
*
|
1997-02-28 |
2000-12-12 |
Eastman Kodak Company |
Active pixel sensor with inter-pixel function sharing
|
US6107655A
(en)
*
|
1997-08-15 |
2000-08-22 |
Eastman Kodak Company |
Active pixel image sensor with shared amplifier read-out
|
JP3496918B2
(ja)
*
|
1997-12-26 |
2004-02-16 |
キヤノン株式会社 |
固体撮像装置
|
US6977684B1
(en)
*
|
1998-04-30 |
2005-12-20 |
Canon Kabushiki Kaisha |
Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
|
KR19990084630A
(ko)
*
|
1998-05-08 |
1999-12-06 |
김영환 |
씨모스 이미지 센서 및 그 구동 방법
|
FR2781929B1
(fr)
*
|
1998-07-28 |
2002-08-30 |
St Microelectronics Sa |
Capteur d'image a reseau de photodiodes
|
US6239456B1
(en)
|
1998-08-19 |
2001-05-29 |
Photobit Corporation |
Lock in pinned photodiode photodetector
|
US6734906B1
(en)
*
|
1998-09-02 |
2004-05-11 |
Canon Kabushiki Kaisha |
Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
|
US6657665B1
(en)
*
|
1998-12-31 |
2003-12-02 |
Eastman Kodak Company |
Active Pixel Sensor with wired floating diffusions and shared amplifier
|
US7116366B1
(en)
|
1999-08-31 |
2006-10-03 |
Micron Technology, Inc. |
CMOS aps pixel sensor dynamic range increase
|
US6486913B1
(en)
*
|
1999-09-30 |
2002-11-26 |
Intel Corporation |
Pixel array with shared reset circuitry
|
KR100683396B1
(ko)
*
|
1999-12-28 |
2007-02-15 |
매그나칩 반도체 유한회사 |
이미지센서의 화소어레이 주사 방법
|
US6624456B2
(en)
*
|
2000-02-23 |
2003-09-23 |
Micron Technology, Inc. |
Frame shutter pixel with an isolated storage node
|
US6552322B1
(en)
*
|
2000-05-16 |
2003-04-22 |
Micron Technology, Inc. |
Shared photodetector pixel image sensor
|
JP2002122887A
(ja)
*
|
2000-06-12 |
2002-04-26 |
Nec Corp |
液晶表示装置及びその製造方法
|
US6642961B1
(en)
*
|
2000-07-12 |
2003-11-04 |
Vanguard International Semiconductor Corp. |
Method of defective pixel address detection for image sensors having windowing function
|
US7154546B1
(en)
*
|
2000-08-07 |
2006-12-26 |
Micron Technology, Inc. |
Pixel optimization for color
|
US6541794B1
(en)
*
|
2000-08-31 |
2003-04-01 |
Motorola, Inc. |
Imaging device and method
|
US6365926B1
(en)
|
2000-09-20 |
2002-04-02 |
Eastman Kodak Company |
CMOS active pixel with scavenging diode
|
US6552323B2
(en)
*
|
2000-12-06 |
2003-04-22 |
Eastman Kodak Company |
Image sensor with a shared output signal line
|
FR2820883B1
(fr)
|
2001-02-12 |
2003-06-13 |
St Microelectronics Sa |
Photodiode a grande capacite
|
FR2820882B1
(fr)
|
2001-02-12 |
2003-06-13 |
St Microelectronics Sa |
Photodetecteur a trois transistors
|
FR2824665B1
(fr)
*
|
2001-05-09 |
2004-07-23 |
St Microelectronics Sa |
Photodetecteur de type cmos
|
CN1225897C
(zh)
*
|
2002-08-21 |
2005-11-02 |
佳能株式会社 |
摄像装置
|
US6919551B2
(en)
*
|
2002-08-29 |
2005-07-19 |
Micron Technology Inc. |
Differential column readout scheme for CMOS APS pixels
|
US7375748B2
(en)
*
|
2002-08-29 |
2008-05-20 |
Micron Technology, Inc. |
Differential readout from pixels in CMOS sensor
|
JP3792628B2
(ja)
*
|
2002-09-02 |
2006-07-05 |
富士通株式会社 |
固体撮像装置及び画像読み出し方法
|
FR2844398A1
(fr)
*
|
2002-09-11 |
2004-03-12 |
St Microelectronics Sa |
Photodetecteur d'un capteur d'images
|
US7489352B2
(en)
*
|
2002-11-15 |
2009-02-10 |
Micron Technology, Inc. |
Wide dynamic range pinned photodiode active pixel sensor (APS)
|
JP4208559B2
(ja)
|
2002-12-03 |
2009-01-14 |
キヤノン株式会社 |
光電変換装置
|
US7436010B2
(en)
*
|
2003-02-13 |
2008-10-14 |
Matsushita Electric Industrial Co., Ltd. |
Solid state imaging apparatus, method for driving the same and camera using the same
|
JP3794637B2
(ja)
*
|
2003-03-07 |
2006-07-05 |
松下電器産業株式会社 |
固体撮像装置
|
KR100523672B1
(ko)
*
|
2003-04-30 |
2005-10-24 |
매그나칩 반도체 유한회사 |
다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서
|
US7542085B2
(en)
*
|
2003-11-26 |
2009-06-02 |
Aptina Imaging Corporation |
Image sensor with a capacitive storage node linked to transfer gate
|
US7332786B2
(en)
*
|
2003-11-26 |
2008-02-19 |
Micron Technology, Inc. |
Anti-blooming storage pixel
|
US20050157194A1
(en)
*
|
2004-01-06 |
2005-07-21 |
Altice Peter P.Jr. |
Imager device with dual storage nodes
|
US7087883B2
(en)
*
|
2004-02-04 |
2006-08-08 |
Omnivision Technologies, Inc. |
CMOS image sensor using shared transistors between pixels with dual pinned photodiode
|
JP4067054B2
(ja)
*
|
2004-02-13 |
2008-03-26 |
キヤノン株式会社 |
固体撮像装置および撮像システム
|
JP4230406B2
(ja)
|
2004-04-27 |
2009-02-25 |
富士通マイクロエレクトロニクス株式会社 |
固体撮像装置
|
KR100674908B1
(ko)
*
|
2004-06-01 |
2007-01-26 |
삼성전자주식회사 |
필 팩터가 개선된 cmos 이미지 소자
|
JP4935354B2
(ja)
*
|
2004-07-20 |
2012-05-23 |
富士通セミコンダクター株式会社 |
Cmos撮像素子
|
JP4971586B2
(ja)
|
2004-09-01 |
2012-07-11 |
キヤノン株式会社 |
固体撮像装置
|
JP2006093263A
(ja)
*
|
2004-09-22 |
2006-04-06 |
Seiko Epson Corp |
固体撮像装置及びその駆動方法
|
JP2006147708A
(ja)
*
|
2004-11-17 |
2006-06-08 |
Omron Corp |
撮像デバイス
|
US20060125947A1
(en)
*
|
2004-12-09 |
2006-06-15 |
Packer Jimmy L |
Imaging with clustered photosite arrays
|
KR100690880B1
(ko)
*
|
2004-12-16 |
2007-03-09 |
삼성전자주식회사 |
픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
|
US20060255381A1
(en)
*
|
2005-05-10 |
2006-11-16 |
Micron Technology, Inc. |
Pixel with gate contacts over active region and method of forming same
|
US7830437B2
(en)
*
|
2005-05-11 |
2010-11-09 |
Aptina Imaging Corp. |
High fill factor multi-way shared pixel
|
US7446357B2
(en)
*
|
2005-05-11 |
2008-11-04 |
Micron Technology, Inc. |
Split trunk pixel layout
|
US7342213B2
(en)
*
|
2005-06-01 |
2008-03-11 |
Eastman Kodak Company |
CMOS APS shared amplifier pixel with symmetrical field effect transistor placement
|
KR100660865B1
(ko)
*
|
2005-06-08 |
2006-12-26 |
삼성전자주식회사 |
이미지 센서에서 공유된 배선/트랜지스터를 가지는 픽셀회로 및 구동 방법
|
KR100718781B1
(ko)
|
2005-06-15 |
2007-05-16 |
매그나칩 반도체 유한회사 |
콤팩트 픽셀 레이아웃을 갖는 cmos 이미지 센서
|
US7468532B2
(en)
*
|
2005-07-12 |
2008-12-23 |
Aptina Imaging Corporation |
Method and apparatus providing capacitor on an electrode of an imager photosensor
|
US7728896B2
(en)
*
|
2005-07-12 |
2010-06-01 |
Micron Technology, Inc. |
Dual conversion gain gate and capacitor and HDR combination
|
US7449736B2
(en)
*
|
2005-07-12 |
2008-11-11 |
Micron Technology, Inc. |
Pixel with transfer gate with no isolation edge
|
US7432540B2
(en)
*
|
2005-08-01 |
2008-10-07 |
Micron Technology, Inc. |
Dual conversion gain gate and capacitor combination
|
US20070035649A1
(en)
*
|
2005-08-10 |
2007-02-15 |
Micron Technology, Inc. |
Image pixel reset through dual conversion gain gate
|
US7511323B2
(en)
*
|
2005-08-11 |
2009-03-31 |
Aptina Imaging Corporation |
Pixel cells in a honeycomb arrangement
|
US20070040922A1
(en)
*
|
2005-08-22 |
2007-02-22 |
Micron Technology, Inc. |
HDR/AB on multi-way shared pixels
|
US7804117B2
(en)
*
|
2005-08-24 |
2010-09-28 |
Aptina Imaging Corporation |
Capacitor over red pixel
|
US7800146B2
(en)
*
|
2005-08-26 |
2010-09-21 |
Aptina Imaging Corporation |
Implanted isolation region for imager pixels
|
US7244918B2
(en)
*
|
2005-08-30 |
2007-07-17 |
Micron Technology, Inc. |
Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
|
US7714917B2
(en)
*
|
2005-08-30 |
2010-05-11 |
Aptina Imaging Corporation |
Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
|
JP4486015B2
(ja)
*
|
2005-09-13 |
2010-06-23 |
パナソニック株式会社 |
固体撮像装置
|
JP4752447B2
(ja)
*
|
2005-10-21 |
2011-08-17 |
ソニー株式会社 |
固体撮像装置およびカメラ
|
JP4851164B2
(ja)
*
|
2005-10-31 |
2012-01-11 |
シャープ株式会社 |
増幅型固体撮像装置
|
KR100778854B1
(ko)
*
|
2005-12-29 |
2007-11-22 |
동부일렉트로닉스 주식회사 |
씨모스 이미지 센서 및 그 제조방법
|
US7602429B2
(en)
*
|
2006-02-01 |
2009-10-13 |
Chi Wah Kok |
Paired differential active pixel sensor
|
US7667183B2
(en)
*
|
2006-03-10 |
2010-02-23 |
Samsung Electronics Co., Ltd. |
Image sensor with high fill factor pixels and method for forming an image sensor
|
US7608873B2
(en)
*
|
2006-04-27 |
2009-10-27 |
Aptina Imaging Corporation |
Buried-gated photodiode device and method for configuring and operating same
|
EP1887626A1
(de)
*
|
2006-08-09 |
2008-02-13 |
Tohoku University |
Optischer Sensor mit Ueberlaufgate und Speicherkondensator
|
US7764315B2
(en)
*
|
2006-08-24 |
2010-07-27 |
Dalsa Corporation |
CMOS imaging facility and a modular array for use in such a facility
|
US8026966B2
(en)
|
2006-08-29 |
2011-09-27 |
Micron Technology, Inc. |
Method, apparatus and system providing a storage gate pixel with high dynamic range
|
US7773138B2
(en)
*
|
2006-09-13 |
2010-08-10 |
Tower Semiconductor Ltd. |
Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme
|
US7916195B2
(en)
|
2006-10-13 |
2011-03-29 |
Sony Corporation |
Solid-state imaging device, imaging apparatus and camera
|
WO2008088981A1
(en)
|
2007-01-11 |
2008-07-24 |
Micron Technology, Inc. |
Missing pixel architecture
|
EP1971088A1
(de)
*
|
2007-03-12 |
2008-09-17 |
Nokia Corporation |
Ressourcenfreigabe in einem Kommunikationssystem
|
US7915702B2
(en)
*
|
2007-03-15 |
2011-03-29 |
Eastman Kodak Company |
Reduced pixel area image sensor
|
US8072513B2
(en)
|
2007-05-02 |
2011-12-06 |
Canon Kabushiki Kaisha |
Image capturing system, signal processing circuit, and signal processing method
|
US20080296639A1
(en)
*
|
2007-06-01 |
2008-12-04 |
Dalsa Corporation |
Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device
|
JP5298499B2
(ja)
*
|
2007-10-25 |
2013-09-25 |
住友電気工業株式会社 |
受光素子アレイおよび撮像装置
|
US8130300B2
(en)
|
2007-12-20 |
2012-03-06 |
Aptina Imaging Corporation |
Imager method and apparatus having combined select signals
|
JP4952601B2
(ja)
*
|
2008-02-04 |
2012-06-13 |
日本テキサス・インスツルメンツ株式会社 |
固体撮像装置
|
US8077236B2
(en)
|
2008-03-20 |
2011-12-13 |
Aptina Imaging Corporation |
Method and apparatus providing reduced metal routing in imagers
|
US8031247B2
(en)
*
|
2008-08-20 |
2011-10-04 |
Aptina Imaging Corporation |
Method and apparatus providing an imager with a shared power supply and readout line for pixels
|
TWI433307B
(zh)
|
2008-10-22 |
2014-04-01 |
Sony Corp |
固態影像感測器、其驅動方法、成像裝置及電子器件
|
US8130302B2
(en)
*
|
2008-11-07 |
2012-03-06 |
Aptina Imaging Corporation |
Methods and apparatus providing selective binning of pixel circuits
|
JP5149143B2
(ja)
*
|
2008-12-24 |
2013-02-20 |
シャープ株式会社 |
固体撮像素子およびその製造方法、電子情報機器
|
JP2010199450A
(ja)
|
2009-02-27 |
2010-09-09 |
Sony Corp |
固体撮像装置の製造方法、固体撮像装置および電子機器
|
US8405751B2
(en)
*
|
2009-08-03 |
2013-03-26 |
International Business Machines Corporation |
Image sensor pixel structure employing a shared floating diffusion
|
KR20110050063A
(ko)
*
|
2009-11-06 |
2011-05-13 |
삼성전자주식회사 |
픽셀과 이를 포함하는 이미지 처리 장치들
|
JP5537172B2
(ja)
|
2010-01-28 |
2014-07-02 |
ソニー株式会社 |
固体撮像装置及び電子機器
|
JP5688540B2
(ja)
*
|
2010-02-26 |
2015-03-25 |
パナソニックIpマネジメント株式会社 |
固体撮像装置およびカメラ
|
JP5541718B2
(ja)
|
2010-08-19 |
2014-07-09 |
キヤノン株式会社 |
撮像装置及びその欠陥画素検出方法
|
JP5458043B2
(ja)
*
|
2011-03-08 |
2014-04-02 |
株式会社東芝 |
固体撮像装置
|
JP5449242B2
(ja)
|
2011-03-29 |
2014-03-19 |
富士フイルム株式会社 |
固体撮像素子及び撮像装置
|
JP2013038174A
(ja)
*
|
2011-08-05 |
2013-02-21 |
Canon Inc |
軟x線検出装置、及び軟x線検出システム
|
JP5963450B2
(ja)
*
|
2012-01-18 |
2016-08-03 |
キヤノン株式会社 |
撮像装置および撮像システム
|
JP2014049727A
(ja)
*
|
2012-09-04 |
2014-03-17 |
Canon Inc |
固体撮像装置
|
US9160956B2
(en)
|
2013-02-11 |
2015-10-13 |
Tower Semiconductor Ltd. |
Shared readout low noise global shutter image sensor
|
US9210345B2
(en)
|
2013-02-11 |
2015-12-08 |
Tower Semiconductor Ltd. |
Shared readout low noise global shutter image sensor method
|
JP5874777B2
(ja)
*
|
2014-04-25 |
2016-03-02 |
ソニー株式会社 |
固体撮像装置及び電子機器
|
US9526468B2
(en)
|
2014-09-09 |
2016-12-27 |
General Electric Company |
Multiple frame acquisition for exposure control in X-ray medical imagers
|
JP2017175164A
(ja)
*
|
2017-06-12 |
2017-09-28 |
ソニー株式会社 |
固体撮像装置及び電子機器
|
CN109427287B
(zh)
|
2017-08-29 |
2020-12-22 |
昆山国显光电有限公司 |
适用于高像素密度的像素驱动电路、像素结构和制作方法
|
JP7086783B2
(ja)
*
|
2018-08-13 |
2022-06-20 |
株式会社東芝 |
固体撮像装置
|
JP6967173B1
(ja)
*
|
2021-07-19 |
2021-11-17 |
テックポイント インクTechpoint, Inc. |
撮像素子及び撮像装置
|