DE69904856T2 - Ein verfahren zum löschen von seiten und löschprüfung in einem nichtflüchtigen speichermatrix - Google Patents

Ein verfahren zum löschen von seiten und löschprüfung in einem nichtflüchtigen speichermatrix

Info

Publication number
DE69904856T2
DE69904856T2 DE69904856T DE69904856T DE69904856T2 DE 69904856 T2 DE69904856 T2 DE 69904856T2 DE 69904856 T DE69904856 T DE 69904856T DE 69904856 T DE69904856 T DE 69904856T DE 69904856 T2 DE69904856 T2 DE 69904856T2
Authority
DE
Germany
Prior art keywords
volatile storage
storage matrix
delete method
deletion check
page delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69904856T
Other languages
English (en)
Other versions
DE69904856D1 (de
Inventor
Pau-Ling Chen
S Chung
Charles Hollmer
Vincent Leung
Quang Le
Masaru Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Fujitsu Ltd
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Advanced Micro Devices Inc filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69904856D1 publication Critical patent/DE69904856D1/de
Publication of DE69904856T2 publication Critical patent/DE69904856T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436Arrangements for verifying correct programming or erasure
    • G11C16/344Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445Circuits or methods to verify correct erasure of nonvolatile memory cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/14Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436Arrangements for verifying correct programming or erasure
    • G11C16/344Arrangements for verifying correct erasure or for detecting overerased cells
DE69904856T 1998-10-20 1999-10-05 Ein verfahren zum löschen von seiten und löschprüfung in einem nichtflüchtigen speichermatrix Expired - Lifetime DE69904856T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/175,646 US5995417A (en) 1998-10-20 1998-10-20 Scheme for page erase and erase verify in a non-volatile memory array
PCT/US1999/023109 WO2000024002A1 (en) 1998-10-20 1999-10-05 A scheme for page erase and erase verify in a non-volatile memory array

Publications (2)

Publication Number Publication Date
DE69904856D1 DE69904856D1 (de) 2003-02-13
DE69904856T2 true DE69904856T2 (de) 2003-11-06

Family

ID=22641071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904856T Expired - Lifetime DE69904856T2 (de) 1998-10-20 1999-10-05 Ein verfahren zum löschen von seiten und löschprüfung in einem nichtflüchtigen speichermatrix

Country Status (7)

Country Link
US (1) US5995417A (de)
EP (1) EP1125302B1 (de)
JP (1) JP2002528841A (de)
KR (1) KR100564378B1 (de)
DE (1) DE69904856T2 (de)
TW (1) TW455873B (de)
WO (1) WO2000024002A1 (de)

Families Citing this family (146)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914904A (en) * 1996-10-01 1999-06-22 Altera Corporation Compact electrically erasable memory cells and arrays
US6671769B1 (en) * 1999-07-01 2003-12-30 Micron Technology, Inc. Flash memory with fast boot block access
US6172915B1 (en) * 1999-09-30 2001-01-09 Eon Silicon Devices, Inc. Unified erase method in flash EEPROM
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6400603B1 (en) * 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
FR2816751A1 (fr) * 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
JP3940570B2 (ja) * 2001-07-06 2007-07-04 株式会社東芝 半導体記憶装置
US7057935B2 (en) * 2001-08-30 2006-06-06 Micron Technology, Inc. Erase verify for non-volatile memory
JP4053825B2 (ja) * 2002-01-22 2008-02-27 株式会社東芝 半導体集積回路装置
US6587383B1 (en) * 2002-03-19 2003-07-01 Micron Technology, Inc. Erase block architecture for non-volatile memory
KR100495308B1 (ko) * 2002-07-18 2005-06-14 주식회사 하이닉스반도체 플래시 메모리 소자의 로우 디코더
US6735114B1 (en) * 2003-02-04 2004-05-11 Advanced Micro Devices, Inc. Method of improving dynamic reference tracking for flash memory unit
US7180785B2 (en) 2003-04-17 2007-02-20 Spansion Llc Nonvolatile semiconductor memory device with a plurality of sectors
US20050227049A1 (en) * 2004-03-22 2005-10-13 Boyack James R Process for fabrication of printed circuit boards
JP4157065B2 (ja) * 2004-03-29 2008-09-24 株式会社東芝 半導体記憶装置
KR100705221B1 (ko) * 2004-09-03 2007-04-06 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자 및 이를 이용한 플래쉬 메모리 셀의소거 방법
US7450433B2 (en) * 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
US7457166B2 (en) * 2005-03-31 2008-11-25 Sandisk Corporation Erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
ATE457518T1 (de) * 2005-03-31 2010-02-15 Sandisk Corp Löschen eines nichtflüchtigen speichers unter verwendung veränderlicher wortleitungsbedingungen zum ausgleichen langsamer schreibender speicherzellen
US7522457B2 (en) * 2005-03-31 2009-04-21 Sandisk Corporation Systems for erase voltage manipulation in non-volatile memory for controlled shifts in threshold voltage
US7430138B2 (en) 2005-03-31 2008-09-30 Sandisk Corporation Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells
KR100706797B1 (ko) * 2005-08-23 2007-04-12 삼성전자주식회사 각각의 워드 라인에 다른 레벨의 소거 전압을 인가하는낸드 플래시 메모리 장치
EP1932158A4 (de) 2005-09-30 2008-10-15 Mosaid Technologies Inc Speicher mit ausgangssteuerung
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
US11948629B2 (en) 2005-09-30 2024-04-02 Mosaid Technologies Incorporated Non-volatile memory device with concurrent bank operations
US7747833B2 (en) * 2005-09-30 2010-06-29 Mosaid Technologies Incorporated Independent link and bank selection
US20070076502A1 (en) * 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US8335868B2 (en) * 2006-03-28 2012-12-18 Mosaid Technologies Incorporated Apparatus and method for establishing device identifiers for serially interconnected devices
US8069328B2 (en) * 2006-03-28 2011-11-29 Mosaid Technologies Incorporated Daisy chain cascade configuration recognition technique
US8364861B2 (en) * 2006-03-28 2013-01-29 Mosaid Technologies Incorporated Asynchronous ID generation
US7551492B2 (en) 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
US7760552B2 (en) * 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
DE602007010439D1 (de) * 2006-03-31 2010-12-23 Mosaid Technologies Inc Flash-speichersystem-steuerverfahren
JP5183946B2 (ja) * 2006-03-31 2013-04-17 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
WO2007132456A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
KR100739256B1 (ko) * 2006-05-12 2007-07-12 주식회사 하이닉스반도체 소거 동작시 메모리 셀 블록의 크기를 선택적으로 변경하는기능을 가지는 플래시 메모리 장치 및 그 소거 동작 방법
WO2007132457A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7904639B2 (en) * 2006-08-22 2011-03-08 Mosaid Technologies Incorporated Modular command structure for memory and memory system
US8060806B2 (en) * 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
US8700818B2 (en) * 2006-09-29 2014-04-15 Mosaid Technologies Incorporated Packet based ID generation for serially interconnected devices
US7499338B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation Partitioned soft programming in non-volatile memory
US7499317B2 (en) * 2006-10-13 2009-03-03 Sandisk Corporation System for partitioned erase and erase verification in a non-volatile memory to compensate for capacitive coupling
US7495954B2 (en) * 2006-10-13 2009-02-24 Sandisk Corporation Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory
US7535766B2 (en) * 2006-10-13 2009-05-19 Sandisk Corporation Systems for partitioned soft programming in non-volatile memory
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
KR100781980B1 (ko) 2006-11-02 2007-12-06 삼성전자주식회사 불휘발성 메모리 장치에서의 디코더 및 그에 의한 디코딩방법
US7817470B2 (en) * 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
US7924648B2 (en) * 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7853727B2 (en) * 2006-12-06 2010-12-14 Mosaid Technologies Incorporated Apparatus and method for producing identifiers regardless of mixed device type in a serial interconnection
US8010709B2 (en) * 2006-12-06 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
US7818464B2 (en) * 2006-12-06 2010-10-19 Mosaid Technologies Incorporated Apparatus and method for capturing serial input data
US8331361B2 (en) * 2006-12-06 2012-12-11 Mosaid Technologies Incorporated Apparatus and method for producing device identifiers for serially interconnected devices of mixed type
US8271758B2 (en) * 2006-12-06 2012-09-18 Mosaid Technologies Incorporated Apparatus and method for producing IDS for interconnected devices of mixed type
US7529149B2 (en) * 2006-12-12 2009-05-05 Mosaid Technologies Incorporated Memory system and method with serial and parallel modes
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8984249B2 (en) * 2006-12-20 2015-03-17 Novachips Canada Inc. ID generation apparatus and method for serially interconnected devices
US7539066B2 (en) * 2006-12-28 2009-05-26 Intel Corporation Method, apparatus, and system for improved erase operation in flash memory
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7518923B2 (en) 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8010710B2 (en) * 2007-02-13 2011-08-30 Mosaid Technologies Incorporated Apparatus and method for identifying device type of serially interconnected devices
EP2109862A4 (de) * 2007-02-16 2010-08-04 Mosaid Technologies Inc Halbleiterbauelement und verfahren zur veringerung des stromverbrauchs in einem system mit verbundenen bauelementen
WO2008101316A1 (en) 2007-02-22 2008-08-28 Mosaid Technologies Incorporated Apparatus and method for using a page buffer of a memory device as a temporary cache
US7796462B2 (en) * 2007-02-22 2010-09-14 Mosaid Technologies Incorporated Data flow control in multiple independent port
US8086785B2 (en) * 2007-02-22 2011-12-27 Mosaid Technologies Incorporated System and method of page buffer operation for memory devices
US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
KR100826653B1 (ko) * 2007-04-06 2008-05-06 주식회사 하이닉스반도체 낸드 플래시 메모리소자의 소거검증 방법
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US7577029B2 (en) * 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
WO2008139441A2 (en) * 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) * 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009050703A2 (en) 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
WO2009063450A2 (en) 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US7913128B2 (en) * 2007-11-23 2011-03-22 Mosaid Technologies Incorporated Data channel test apparatus and method thereof
US8225181B2 (en) * 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) * 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US7983099B2 (en) 2007-12-20 2011-07-19 Mosaid Technologies Incorporated Dual function compatible non-volatile memory device
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US7940572B2 (en) * 2008-01-07 2011-05-10 Mosaid Technologies Incorporated NAND flash memory having multiple cell substrates
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) * 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US7978527B2 (en) 2008-06-03 2011-07-12 Sandisk Technologies Inc. Verification process for non-volatile storage
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8254174B2 (en) 2009-02-04 2012-08-28 Micron Technology, Inc. Memory segment accessing in a memory device
US8228701B2 (en) * 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
EP2498259B1 (de) * 2011-03-08 2018-11-07 Linear Technology Corporation Verfahren und System zum Löschen von Daten in nichtflüchtigem Speicher in Anwendungen mit niedrigem Stromverbrauch
KR101753767B1 (ko) 2011-07-12 2017-07-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
US8713406B2 (en) * 2012-04-30 2014-04-29 Freescale Semiconductor, Inc. Erasing a non-volatile memory (NVM) system having error correction code (ECC)
JP2014053056A (ja) * 2012-09-06 2014-03-20 Toshiba Corp 半導体記憶装置
US9225356B2 (en) 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
US8923054B1 (en) 2013-06-14 2014-12-30 Sandisk Technologies Inc. Pseudo block operation mode in 3D NAND
KR20210111051A (ko) * 2020-03-02 2021-09-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
TWI761183B (zh) * 2021-04-19 2022-04-11 旺宏電子股份有限公司 對記憶體裝置執行操作之方法
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62266798A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US4931997A (en) * 1987-03-16 1990-06-05 Hitachi Ltd. Semiconductor memory having storage buffer to save control data during bulk erase
US5283758A (en) * 1989-06-13 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture
KR930000869B1 (ko) * 1989-11-30 1993-02-08 삼성전자 주식회사 페이지 소거 가능한 플래쉬형 이이피롬 장치
JP2563702B2 (ja) * 1990-09-25 1996-12-18 株式会社東芝 不揮発性半導体メモリ
US5185718A (en) * 1991-02-19 1993-02-09 Catalyst Semiconductor Corporation Memory array architecture for flash memory
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
DE69319162T2 (de) * 1992-03-26 1999-03-25 Hitachi Ltd Flash-Speicher
EP0596198B1 (de) * 1992-07-10 2000-03-29 Sony Corporation Flash-EPROM mit Löschprüfung und Architektur zum Adresszerhacken
JP3199882B2 (ja) * 1993-01-13 2001-08-20 株式会社東芝 不揮発性半導体記憶装置
US5365484A (en) * 1993-08-23 1994-11-15 Advanced Micro Devices, Inc. Independent array grounds for flash EEPROM array with paged erase architechture
KR0142367B1 (ko) * 1995-02-04 1998-07-15 김광호 열 리던던씨를 가지는 불휘발성 반도체 메모리의 소거 검증회로
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치
JP2838993B2 (ja) * 1995-11-29 1998-12-16 日本電気株式会社 不揮発性半導体記憶装置
US5835414A (en) * 1996-06-14 1998-11-10 Macronix International Co., Ltd. Page mode program, program verify, read and erase verify for floating gate memory device with low current page buffer
US5801994A (en) * 1997-08-15 1998-09-01 Programmable Microelectronics Corporation Non-volatile memory array architecture

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EP1125302B1 (de) 2003-01-08
JP2002528841A (ja) 2002-09-03
WO2000024002A1 (en) 2000-04-27
US5995417A (en) 1999-11-30
KR100564378B1 (ko) 2006-03-27
TW455873B (en) 2001-09-21
DE69904856D1 (de) 2003-02-13
KR20010102910A (ko) 2001-11-17
EP1125302A1 (de) 2001-08-22

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