DE69927967D1 - Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung - Google Patents

Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung

Info

Publication number
DE69927967D1
DE69927967D1 DE69927967T DE69927967T DE69927967D1 DE 69927967 D1 DE69927967 D1 DE 69927967D1 DE 69927967 T DE69927967 T DE 69927967T DE 69927967 T DE69927967 T DE 69927967T DE 69927967 D1 DE69927967 D1 DE 69927967D1
Authority
DE
Germany
Prior art keywords
regulating
gate voltage
bit memory
programming method
volatile multi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69927967T
Other languages
English (en)
Other versions
DE69927967T2 (de
Inventor
Guido Torelli
Alberto Modelli
Alessandro Manstretta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
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STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69927967D1 publication Critical patent/DE69927967D1/de
Application granted granted Critical
Publication of DE69927967T2 publication Critical patent/DE69927967T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
DE69927967T 1999-08-03 1999-08-03 Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung Expired - Lifetime DE69927967T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830501A EP1074995B1 (de) 1999-08-03 1999-08-03 Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung

Publications (2)

Publication Number Publication Date
DE69927967D1 true DE69927967D1 (de) 2005-12-01
DE69927967T2 DE69927967T2 (de) 2006-07-27

Family

ID=8243537

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69927967T Expired - Lifetime DE69927967T2 (de) 1999-08-03 1999-08-03 Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung

Country Status (4)

Country Link
US (1) US6366496B1 (de)
EP (1) EP1074995B1 (de)
JP (1) JP4469475B2 (de)
DE (1) DE69927967T2 (de)

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Also Published As

Publication number Publication date
DE69927967T2 (de) 2006-07-27
JP2001057091A (ja) 2001-02-27
EP1074995B1 (de) 2005-10-26
US6366496B1 (en) 2002-04-02
EP1074995A1 (de) 2001-02-07
JP4469475B2 (ja) 2010-05-26

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Representative=s name: LEINWEBER & ZIMMERMANN, 80331 MUENCHEN