DE69932589D1 - Magnetischer tunnelübergang mit geringer umschalt-feldstärke für magnetische mehrzustands-speicherzelle - Google Patents
Magnetischer tunnelübergang mit geringer umschalt-feldstärke für magnetische mehrzustands-speicherzelleInfo
- Publication number
- DE69932589D1 DE69932589D1 DE69932589T DE69932589T DE69932589D1 DE 69932589 D1 DE69932589 D1 DE 69932589D1 DE 69932589 T DE69932589 T DE 69932589T DE 69932589 T DE69932589 T DE 69932589T DE 69932589 D1 DE69932589 D1 DE 69932589D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetic
- memory cell
- state memory
- field thickness
- tunnel transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5615—Multilevel magnetic memory cell using non-magnetic non-conducting interlayer, e.g. MTJ
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US118979 | 1998-07-20 | ||
| US09/118,979 US5953248A (en) | 1998-07-20 | 1998-07-20 | Low switching field magnetic tunneling junction for high density arrays |
| PCT/US1999/016314 WO2000004552A1 (en) | 1998-07-20 | 1999-07-19 | Low switching field magnetic tunneling junction usable for multi-state magnetic memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69932589D1 true DE69932589D1 (de) | 2006-09-14 |
| DE69932589T2 DE69932589T2 (de) | 2006-12-07 |
Family
ID=22381922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69932589T Expired - Fee Related DE69932589T2 (de) | 1998-07-20 | 1999-07-19 | Magnetischer tunnelübergang mit geringer umschaltfeldstärke für magnetische mehrzustandsspeicherzelle |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5953248A (de) |
| EP (1) | EP1038299B1 (de) |
| JP (1) | JP4815051B2 (de) |
| DE (1) | DE69932589T2 (de) |
| TW (1) | TW451192B (de) |
| WO (1) | WO2000004552A1 (de) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215695B1 (en) * | 1998-12-08 | 2001-04-10 | Canon Kabushiki Kaisha | Magnetoresistance element and magnetic memory device employing the same |
| US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
| DE19946490A1 (de) * | 1999-09-28 | 2001-04-19 | Infineon Technologies Ag | Magnetoresistiver Schreib/Lese-Speicher sowie Verfahren zum Beschreiben und Auslesen eines solchen Speichers |
| US6172904B1 (en) * | 2000-01-27 | 2001-01-09 | Hewlett-Packard Company | Magnetic memory cell with symmetric switching characteristics |
| DE10106860A1 (de) * | 2000-02-17 | 2001-08-30 | Sharp Kk | MTJ-Element und Magnetspeicher unter Verwendung eines solchen |
| US6727105B1 (en) * | 2000-02-28 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |
| US6911710B2 (en) * | 2000-03-09 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Multi-bit magnetic memory cells |
| US6469926B1 (en) * | 2000-03-22 | 2002-10-22 | Motorola, Inc. | Magnetic element with an improved magnetoresistance ratio and fabricating method thereof |
| DE10113853B4 (de) * | 2000-03-23 | 2009-08-06 | Sharp K.K. | Magnetspeicherelement und Magnetspeicher |
| US6538921B2 (en) | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
| US6767655B2 (en) | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
| US6544801B1 (en) | 2000-08-21 | 2003-04-08 | Motorola, Inc. | Method of fabricating thermally stable MTJ cell and apparatus |
| FR2817999B1 (fr) * | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
| JP3576111B2 (ja) | 2001-03-12 | 2004-10-13 | 株式会社東芝 | 磁気抵抗効果素子 |
| JP4458703B2 (ja) | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
| US6730949B2 (en) * | 2001-03-22 | 2004-05-04 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device |
| JP2002334971A (ja) * | 2001-05-09 | 2002-11-22 | Nec Corp | 磁性メモリ及びその動作方法 |
| US6657888B1 (en) | 2001-05-11 | 2003-12-02 | Board Of Regents Of The University Of Nebraska | Application of high spin polarization materials in two terminal non-volatile bistable memory devices |
| US6744086B2 (en) | 2001-05-15 | 2004-06-01 | Nve Corporation | Current switched magnetoresistive memory cell |
| US6963543B2 (en) | 2001-06-29 | 2005-11-08 | Qualcomm Incorporated | Method and system for group call service |
| US6430085B1 (en) | 2001-08-27 | 2002-08-06 | Motorola, Inc. | Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture |
| US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
| US6633498B1 (en) * | 2002-06-18 | 2003-10-14 | Motorola, Inc. | Magnetoresistive random access memory with reduced switching field |
| US6693824B2 (en) * | 2002-06-28 | 2004-02-17 | Motorola, Inc. | Circuit and method of writing a toggle memory |
| US6850433B2 (en) * | 2002-07-15 | 2005-02-01 | Hewlett-Packard Development Company, Lp. | Magnetic memory device and method |
| JP3837102B2 (ja) * | 2002-08-20 | 2006-10-25 | Ｔｄｋ株式会社 | 電磁変換素子、薄膜磁気ヘッド、磁気ヘッドアセンブリおよび磁気再生装置、ならびに電磁変換素子の製造方法 |
| JP2004128237A (ja) * | 2002-10-03 | 2004-04-22 | Sony Corp | 磁気抵抗効果素子および磁気メモリ装置 |
| US6873542B2 (en) | 2002-10-03 | 2005-03-29 | International Business Machines Corporation | Antiferromagnetically coupled bi-layer sensor for magnetic random access memory |
| US6870758B2 (en) * | 2002-10-30 | 2005-03-22 | Hewlett-Packard Development Company, L.P. | Magnetic memory device and methods for making same |
| JP3863484B2 (ja) * | 2002-11-22 | 2006-12-27 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
| DE10258860A1 (de) * | 2002-12-17 | 2004-07-15 | Robert Bosch Gmbh | Magnetoresistives Schichtsystem und Sensorelement mit diesem Schichtsystem |
| US6714446B1 (en) * | 2003-05-13 | 2004-03-30 | Motorola, Inc. | Magnetoelectronics information device having a compound magnetic free layer |
| JP4253225B2 (ja) * | 2003-07-09 | 2009-04-08 | 株式会社東芝 | 磁気抵抗効果素子および磁気メモリ |
| US6956764B2 (en) * | 2003-08-25 | 2005-10-18 | Freescale Semiconductor, Inc. | Method of writing to a multi-state magnetic random access memory cell |
| US7310265B2 (en) * | 2003-10-14 | 2007-12-18 | Agency For Science, Technology And Research | Magnetic memory device |
| US6985383B2 (en) * | 2003-10-20 | 2006-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reference generator for multilevel nonlinear resistivity memory storage elements |
| JP4581394B2 (ja) * | 2003-12-22 | 2010-11-17 | ソニー株式会社 | 磁気メモリ |
| KR100528341B1 (ko) * | 2003-12-30 | 2005-11-15 | 삼성전자주식회사 | 자기 램 및 그 읽기방법 |
| US7105372B2 (en) | 2004-01-20 | 2006-09-12 | Headway Technologies, Inc. | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy |
| US7436700B2 (en) * | 2004-02-06 | 2008-10-14 | Infineon Technologies Ag | MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same |
| DE102005004126B4 (de) * | 2004-02-06 | 2008-05-08 | Qimonda Ag | MRAM-Speicherzelle mit schwacher intrinsisch anisotroper Speicherschicht |
| FR2869445B1 (fr) * | 2004-04-26 | 2006-07-07 | St Microelectronics Sa | Element de memoire vive magnetique |
| US7372116B2 (en) * | 2004-06-16 | 2008-05-13 | Hitachi Global Storage Technologies Netherlands B.V. | Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh |
| US7477490B2 (en) * | 2004-06-30 | 2009-01-13 | Seagate Technology Llc | Single sensor element that is naturally differentiated |
| US7187576B2 (en) * | 2004-07-19 | 2007-03-06 | Infineon Technologies Ag | Read out scheme for several bits in a single MRAM soft layer |
| WO2006038193A2 (en) * | 2004-10-05 | 2006-04-13 | Csi Technology, Inc. | Transferring arbitrary binary data over a fieldbus network |
| US7355884B2 (en) * | 2004-10-08 | 2008-04-08 | Kabushiki Kaisha Toshiba | Magnetoresistive element |
| US7599156B2 (en) * | 2004-10-08 | 2009-10-06 | Kabushiki Kaisha Toshiba | Magnetoresistive element having specially shaped ferromagnetic layer |
| JP4388008B2 (ja) * | 2004-11-30 | 2009-12-24 | 株式会社東芝 | 半導体記憶装置 |
| JP4012196B2 (ja) * | 2004-12-22 | 2007-11-21 | 株式会社東芝 | 磁気ランダムアクセスメモリのデータ書き込み方法 |
| JP2007081280A (ja) * | 2005-09-16 | 2007-03-29 | Fujitsu Ltd | 磁気抵抗効果素子及び磁気メモリ装置 |
| TWI307507B (en) * | 2006-10-20 | 2009-03-11 | Ind Tech Res Inst | Magnetic tunnel junction devices and magnetic random access memory |
| FR2925747B1 (fr) | 2007-12-21 | 2010-04-09 | Commissariat Energie Atomique | Memoire magnetique a ecriture assistee thermiquement |
| US8242776B2 (en) * | 2008-03-26 | 2012-08-14 | Everspin Technologies, Inc. | Magnetic sensor design for suppression of barkhausen noise |
| KR102034210B1 (ko) * | 2013-03-15 | 2019-10-18 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이의 제조 방법, 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08510095A (ja) * | 1994-02-21 | 1996-10-22 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 磁性体の磁化方向を部分的に変える方法及び装置 |
| US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
| JP3293437B2 (ja) * | 1995-12-19 | 2002-06-17 | 松下電器産業株式会社 | 磁気抵抗効果素子、磁気抵抗効果型ヘッド及びメモリー素子 |
| US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| JP3691898B2 (ja) * | 1996-03-18 | 2005-09-07 | 株式会社東芝 | 磁気抵抗効果素子、磁気情報読み出し方法、及び記録素子 |
| US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| US5745408A (en) * | 1996-09-09 | 1998-04-28 | Motorola, Inc. | Multi-layer magnetic memory cell with low switching current |
| US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
| US5768183A (en) * | 1996-09-25 | 1998-06-16 | Motorola, Inc. | Multi-layer magnetic memory cells with improved switching characteristics |
| JP3392657B2 (ja) * | 1996-09-26 | 2003-03-31 | 株式会社東芝 | 半導体記憶装置 |
| US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
| US5801984A (en) * | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
| US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
| US5768181A (en) * | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
| US5828598A (en) * | 1997-05-23 | 1998-10-27 | Motorola, Inc. | MRAM with high GMR ratio |
-
1998
- 1998-07-20 US US09/118,979 patent/US5953248A/en not_active Expired - Lifetime
-
1999
- 1999-07-19 EP EP99935700A patent/EP1038299B1/de not_active Expired - Lifetime
- 1999-07-19 WO PCT/US1999/016314 patent/WO2000004552A1/en active IP Right Grant
- 1999-07-19 DE DE69932589T patent/DE69932589T2/de not_active Expired - Fee Related
- 1999-07-19 JP JP2000560586A patent/JP4815051B2/ja not_active Expired - Lifetime
- 1999-11-16 TW TW088112229A patent/TW451192B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1038299A1 (de) | 2000-09-27 |
| TW451192B (en) | 2001-08-21 |
| US5953248A (en) | 1999-09-14 |
| JP2002520873A (ja) | 2002-07-09 |
| JP4815051B2 (ja) | 2011-11-16 |
| EP1038299B1 (de) | 2006-08-02 |
| DE69932589T2 (de) | 2006-12-07 |
| WO2000004552A1 (en) | 2000-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69932589D1 (de) | Magnetischer tunnelübergang mit geringer umschalt-feldstärke für magnetische mehrzustands-speicherzelle | |
| DE69921737D1 (de) | Magnetische Speicherzelle | |
| DE69923244D1 (de) | Magnetoresistiven Speicheranordnungen | |
| AU3125300A (en) | Avalanche programmed floating gate memory cell structure with program element inpolysilicon | |
| DE60125784D1 (de) | Graben-mosfet-struktur mit geringer gate-ladung | |
| ATE365424T1 (de) | Elektronische programmübersicht mit digitaler speicherung | |
| DE59912387D1 (de) | Magnetischer Speicher | |
| DE60108543D1 (de) | Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle | |
| DE60038240D1 (de) | Alkalische zelle mit isolator | |
| DE59901952D1 (de) | Magnetoresistiver speicher mit niedriger stromdichte | |
| DE69917835D1 (de) | Datenpfadstrukturen mit Rotatorumschalter | |
| ATE259100T1 (de) | Alkalische zelle mit verbesserter kathode | |
| DE69614787T2 (de) | Speichermatrix mit mehrzustandsspeicherzellen | |
| DE60036745D1 (de) | Magnetventilblock mit seriellem Datenbus | |
| DE69807036D1 (de) | Seltenerd Dauermagnet mit hohem Korrosionswiderstand | |
| DE69920351D1 (de) | Bistabile Betätigungsvorrichtung | |
| DE60036747D1 (de) | Magnetventilblock mit seriellem Datenbus | |
| DE69629669D1 (de) | Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung | |
| DE60036656D1 (de) | Magnetventilblock mit seriellem Datenbus | |
| DE69825031D1 (de) | Magnetfeldsensor mit spin tunnelübergang | |
| SG84558A1 (en) | Split gate memory cell | |
| DE60040203D1 (de) | Ferromagnetisches doppelquantentopf-tunnelmagnetwiderstandsbauelement | |
| AU2001276046A1 (en) | High density giant magnetoresistive memory cell | |
| DE69942862D1 (de) | Herstellungsverfahren für nicht-flüchtige Schwebegatespeicherzellen und Kontrollschaltkreis | |
| DE69906541D1 (de) | Mosfet-schalter mit geringer ladungsinjektion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |