EP0015694A3 - Method for forming an insulating film on a semiconductor substrate surface - Google Patents
Method for forming an insulating film on a semiconductor substrate surface Download PDFInfo
- Publication number
- EP0015694A3 EP0015694A3 EP80300530A EP80300530A EP0015694A3 EP 0015694 A3 EP0015694 A3 EP 0015694A3 EP 80300530 A EP80300530 A EP 80300530A EP 80300530 A EP80300530 A EP 80300530A EP 0015694 A3 EP0015694 A3 EP 0015694A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- forming
- insulating film
- semiconductor substrate
- substrate surface
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27301/79 | 1979-03-09 | ||
| JP54027301A JPS5845177B2 (en) | 1979-03-09 | 1979-03-09 | Method for forming semiconductor surface insulating film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0015694A2 EP0015694A2 (en) | 1980-09-17 |
| EP0015694A3 true EP0015694A3 (en) | 1980-11-12 |
| EP0015694B1 EP0015694B1 (en) | 1986-05-07 |
Family
ID=12217260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP80300530A Expired EP0015694B1 (en) | 1979-03-09 | 1980-02-22 | Method for forming an insulating film on a semiconductor substrate surface |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4298629A (en) |
| EP (1) | EP0015694B1 (en) |
| JP (1) | JPS5845177B2 (en) |
| CA (1) | CA1141870A (en) |
| DE (1) | DE3071589D1 (en) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2967704D1 (en) * | 1978-06-14 | 1991-06-13 | Fujitsu Ltd | METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT WITH AN INSULATION LAYER. |
| JPS55134937A (en) * | 1979-04-09 | 1980-10-21 | Hitachi Ltd | Preparation of semiconductor device |
| JPS5737830A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS5767009A (en) * | 1980-10-02 | 1982-04-23 | Semiconductor Energy Lab Co Ltd | Formation of film |
| US4515755A (en) * | 1981-05-11 | 1985-05-07 | Toshiba Ceramics Co., Ltd. | Apparatus for producing a silicon single crystal from a silicon melt |
| GB2106709B (en) * | 1981-09-17 | 1986-11-12 | Itt Ind Ltd | Semiconductor processing |
| JPS58158915A (en) * | 1982-03-16 | 1983-09-21 | Fujitsu Ltd | Thin film producing device |
| US4448633A (en) * | 1982-11-29 | 1984-05-15 | United Technologies Corporation | Passivation of III-V semiconductor surfaces by plasma nitridation |
| US4583492A (en) * | 1983-12-19 | 1986-04-22 | United Technologies Corporation | High rate, low temperature silicon deposition system |
| US4595601A (en) * | 1984-05-25 | 1986-06-17 | Kabushiki Kaisha Toshiba | Method of selectively forming an insulation layer |
| US4510172A (en) * | 1984-05-29 | 1985-04-09 | International Business Machines Corporation | Technique for thin insulator growth |
| US4762728A (en) * | 1985-04-09 | 1988-08-09 | Fairchild Semiconductor Corporation | Low temperature plasma nitridation process and applications of nitride films formed thereby |
| US4640224A (en) * | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
| US4686113A (en) * | 1985-12-18 | 1987-08-11 | Fairchild Semiconductor Corporation | Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method |
| US4715937A (en) * | 1986-05-05 | 1987-12-29 | The Board Of Trustees Of The Leland Stanford Junior University | Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge |
| CH671407A5 (en) * | 1986-06-13 | 1989-08-31 | Balzers Hochvakuum | |
| ES2006119A6 (en) * | 1988-03-24 | 1989-04-01 | Union Explosivos Rio Tinto | Process for the preparation of silicon nitride. |
| DE3839177A1 (en) * | 1988-11-19 | 1990-06-13 | Roehm Gmbh | TEMPORARY PROTECTIVE COATS BASED ON POLYACRYLATE |
| JPH0663099B2 (en) * | 1989-03-06 | 1994-08-17 | 善八 小久見 | Thin film manufacturing method |
| US4902870A (en) * | 1989-03-31 | 1990-02-20 | General Electric Company | Apparatus and method for transfer arc cleaning of a substrate in an RF plasma system |
| US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
| US5010355A (en) * | 1989-12-26 | 1991-04-23 | Xerox Corporation | Ink jet printhead having ionic passivation of electrical circuitry |
| US5032545A (en) * | 1990-10-30 | 1991-07-16 | Micron Technology, Inc. | Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby |
| JP2687758B2 (en) * | 1991-05-27 | 1997-12-08 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US5290368A (en) * | 1992-02-28 | 1994-03-01 | Ingersoll-Rand Company | Process for producing crack-free nitride-hardened surface on titanium by laser beams |
| JP3660391B2 (en) * | 1994-05-27 | 2005-06-15 | 株式会社東芝 | Manufacturing method of semiconductor device |
| US5643639A (en) * | 1994-12-22 | 1997-07-01 | Research Triangle Institute | Plasma treatment method for treatment of a large-area work surface apparatus and methods |
| US5711891A (en) * | 1995-09-20 | 1998-01-27 | Lucent Technologies Inc. | Wafer processing using thermal nitride etch mask |
| JPH09307106A (en) * | 1996-05-20 | 1997-11-28 | Nec Corp | Manufacture of semiconductor device |
| TW317012B (en) * | 1996-10-19 | 1997-10-01 | United Microelectronics Corp | Process of improving semiconductor device degradation caused by hot carrier |
| US6207587B1 (en) | 1997-06-24 | 2001-03-27 | Micron Technology, Inc. | Method for forming a dielectric |
| US6555452B2 (en) * | 1997-11-18 | 2003-04-29 | Technologies And Devices International, Inc. | Method for growing p-type III-V compound material utilizing HVPE techniques |
| US6331468B1 (en) * | 1998-05-11 | 2001-12-18 | Lsi Logic Corporation | Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers |
| US6995097B1 (en) * | 1998-05-27 | 2006-02-07 | Texas Instruments Incorporated | Method for thermal nitridation and oxidation of semiconductor surface |
| US6759315B1 (en) * | 1999-01-04 | 2004-07-06 | International Business Machines Corporation | Method for selective trimming of gate structures and apparatus formed thereby |
| JP4606737B2 (en) * | 2001-08-02 | 2011-01-05 | 東京エレクトロン株式会社 | Substrate treatment method and electronic device material |
| US7297641B2 (en) * | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
| US7092287B2 (en) * | 2002-12-18 | 2006-08-15 | Asm International N.V. | Method of fabricating silicon nitride nanodots |
| TW589706B (en) * | 2003-07-11 | 2004-06-01 | Nanya Technology Corp | Method for forming a bottle trench |
| US7253084B2 (en) * | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
| US7966969B2 (en) | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
| US7674726B2 (en) * | 2004-10-15 | 2010-03-09 | Asm International N.V. | Parts for deposition reactors |
| US7427571B2 (en) * | 2004-10-15 | 2008-09-23 | Asm International, N.V. | Reactor design for reduced particulate generation |
| US7629267B2 (en) * | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
| US20070054048A1 (en) * | 2005-09-07 | 2007-03-08 | Suvi Haukka | Extended deposition range by hot spots |
| US7553516B2 (en) * | 2005-12-16 | 2009-06-30 | Asm International N.V. | System and method of reducing particle contamination of semiconductor substrates |
| WO2007075369A1 (en) * | 2005-12-16 | 2007-07-05 | Asm International N.V. | Low temperature doped silicon layer formation |
| US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
| US7544605B2 (en) * | 2006-11-21 | 2009-06-09 | Freescale Semiconductor, Inc. | Method of making a contact on a backside of a die |
| US7629256B2 (en) | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
| US7851307B2 (en) | 2007-08-17 | 2010-12-14 | Micron Technology, Inc. | Method of forming complex oxide nanodots for a charge trap |
| US8012876B2 (en) | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
| US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
| CN104078385B (en) * | 2013-03-28 | 2018-07-13 | 三菱综合材料株式会社 | The manufacturing method of silicon parts and silicon parts |
| CN107785270B (en) * | 2016-08-31 | 2021-05-07 | 株洲中车时代半导体有限公司 | Nitridation method of MOSFET device |
| RU2769276C1 (en) * | 2021-06-04 | 2022-03-29 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Образования "Чеченский Государственный Университет Имени Ахмата Абдулхамидовича Кадырова" | Silicon nitride manufacturing method |
| CN116768636B (en) * | 2023-06-06 | 2024-03-29 | 衡阳凯新特种材料科技有限公司 | Continuous nitriding method silicon nitride powder production line |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3421936A (en) * | 1964-12-21 | 1969-01-14 | Sprague Electric Co | Silicon nitride coating on semiconductor and method |
| DE1521353A1 (en) * | 1963-10-15 | 1969-07-24 | Licentia Gmbh | Arrangement for the production of surface protection for solids |
| CH490514A (en) * | 1966-08-23 | 1970-05-15 | Philips Nv | Process for the production of silicon nitride layers |
| DE1696625A1 (en) * | 1966-10-07 | 1972-01-13 | Shumpei Yamazaki | Process for the formation of a single or multilayer nitride protective layer on a semiconductor body or semiconductor component |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
| US3424661A (en) * | 1966-09-01 | 1969-01-28 | Bell Telephone Labor Inc | Method of conducting chemical reactions in a glow discharge |
| DE1964942A1 (en) * | 1969-12-24 | 1971-07-01 | Licentia Gmbh | Germanium nitride passivation layer for - planer ge transistors |
| CH519588A (en) * | 1970-02-13 | 1972-02-29 | Berghaus Elektrophysik Anst | Process for processing a workpiece by means of a glow discharge and apparatus for performing the process |
| US3728051A (en) * | 1970-11-16 | 1973-04-17 | G Humbert | Iron or steel components of a rotary piston machine |
| US4206190A (en) * | 1974-03-11 | 1980-06-03 | Westinghouse Electric Corp. | Plasma arc production of silicon nitride |
| NL7506594A (en) * | 1975-06-04 | 1976-12-07 | Philips Nv | PROCEDURE FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED USING THE PROCESS. |
| US4142004A (en) * | 1976-01-22 | 1979-02-27 | Bell Telephone Laboratories, Incorporated | Method of coating semiconductor substrates |
| JPS5319291A (en) * | 1976-08-07 | 1978-02-22 | Ibaragi Seiki Co Ltd | Method of wrapping |
| US4179618A (en) * | 1976-12-01 | 1979-12-18 | Kawasaki Jukogyo Kabushiki Kaisha | Apparatus for ion-nitriding treatment |
| FR2379615A1 (en) * | 1977-02-08 | 1978-09-01 | Vide & Traitement Sa | THERMOCHEMICAL TREATMENT PROCESS OF METALS |
| JPS5458637A (en) * | 1977-10-20 | 1979-05-11 | Kawasaki Heavy Ind Ltd | Ion nitriding method |
-
1979
- 1979-03-09 JP JP54027301A patent/JPS5845177B2/en not_active Expired
-
1980
- 1980-02-22 EP EP80300530A patent/EP0015694B1/en not_active Expired
- 1980-02-22 DE DE8080300530T patent/DE3071589D1/en not_active Expired
- 1980-03-06 CA CA000347175A patent/CA1141870A/en not_active Expired
- 1980-03-07 US US06/128,172 patent/US4298629A/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1521353A1 (en) * | 1963-10-15 | 1969-07-24 | Licentia Gmbh | Arrangement for the production of surface protection for solids |
| US3421936A (en) * | 1964-12-21 | 1969-01-14 | Sprague Electric Co | Silicon nitride coating on semiconductor and method |
| CH490514A (en) * | 1966-08-23 | 1970-05-15 | Philips Nv | Process for the production of silicon nitride layers |
| DE1696625A1 (en) * | 1966-10-07 | 1972-01-13 | Shumpei Yamazaki | Process for the formation of a single or multilayer nitride protective layer on a semiconductor body or semiconductor component |
Non-Patent Citations (3)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 14, No. 3, August 1971 New York (US) K. BRACK et al. :"Silicon nitride films by direct nitridation of silicon substrates" page 758 * |
| IBM TECHNICAL DISCLOSURE BULLETIN, Vol. 19, No. 8, January 1977 New York (US) A. BHATTACHARYYA et al.: "Low temperature plasma conversion of silicon nitride to silicon dioxide" page 2944 * |
| THIN SOLID FILMS, Vol. 30, No. 1, November 1975 Lausanne (CH) M. SOKOLOWSKI et al. :"Ion treatment of silicon in a glow discharge" pages 29-35 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55120143A (en) | 1980-09-16 |
| EP0015694B1 (en) | 1986-05-07 |
| CA1141870A (en) | 1983-02-22 |
| US4298629A (en) | 1981-11-03 |
| EP0015694A2 (en) | 1980-09-17 |
| DE3071589D1 (en) | 1986-06-12 |
| JPS5845177B2 (en) | 1983-10-07 |
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