EP0383768A1 - Ignition device for internal combustion engines. - Google Patents

Ignition device for internal combustion engines.

Info

Publication number
EP0383768A1
EP0383768A1 EP19880905693 EP88905693A EP0383768A1 EP 0383768 A1 EP0383768 A1 EP 0383768A1 EP 19880905693 EP19880905693 EP 19880905693 EP 88905693 A EP88905693 A EP 88905693A EP 0383768 A1 EP0383768 A1 EP 0383768A1
Authority
EP
European Patent Office
Prior art keywords
transistor
connection
ignition device
stage
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19880905693
Other languages
German (de)
French (fr)
Other versions
EP0383768B1 (en
Inventor
Horst Meinders
Ulrich Nelle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP0383768A1 publication Critical patent/EP0383768A1/en
Application granted granted Critical
Publication of EP0383768B1 publication Critical patent/EP0383768B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P15/00—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits
    • F02P15/12—Electric spark ignition having characteristics not provided for in, or of interest apart from, groups F02P1/00 - F02P13/00 and combined with layout of ignition circuits having means for strengthening spark during starting
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/0407—Opening or closing the primary coil circuit with electronic switching means
    • F02P3/0435—Opening or closing the primary coil circuit with electronic switching means with semiconductor devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/05—Layout of circuits for control of the magnitude of the current in the ignition coil
    • F02P3/051—Opening or closing the primary coil circuit with semiconductor devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P3/00—Other installations
    • F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
    • F02P3/04—Layout of circuits
    • F02P3/055—Layout of circuits with protective means to prevent damage to the circuit, e.g. semiconductor devices or the ignition coil
    • F02P3/0552—Opening or closing the primary coil circuit with semiconductor devices

Definitions

  • the invention relates to an ignition device according to the type of the main claim, which is known from D ⁇ -A-28 25 830.
  • the primary winding of an ignition transformer is connected to the collector terminal of the transistor, while the emitter terminal of the transistor is connected to the ground terminal, possibly via a current measuring resistor.
  • high power losses occur at the final stage of the ignition device, which have to be dissipated from the collector connection to the heat sink.
  • the collector connection must be electrically insulated from the heat sink during the clamp voltage occurring during the shutdown process.
  • the ignition device according to the invention with the characterizing features of the main claim has the advantage that a large power loss can be reliably discharged through the use of a pnp transistor in the output stage of the ignition device and the thermally and electrically conductive connection of its collector connection to the earth connection of the ignition device can. By saving insulating layers between the collector connection and the ground connection, the structure of the ignition device is also simplified and thereby cheaper. Finally, the predominant part of the ignition device can be integrated monolithically in a particularly advantageous manner, as a result of which large numbers of items with narrow electrical characteristics can also be produced.
  • FIG. 1 shows a block diagram of the ignition device
  • FIG. 2 shows the circuit diagram of a part of the ignition device with the output stage and the decoupling means
  • FIG. 3 shows a further exemplary embodiment of the ignition device with illustration of the output stage and the decoupling means
  • FIG. 4 shows the ignition device with an illustration of a Reclosure lock in the final stage and a decoupling diode in the preliminary stage
  • FIG. 5 shows a circuit diagram of an exemplary embodiment of the final stage of the ignition device using monolithically integrated technology
  • FIG. 6 shows a cross section through a semiconductor substrate. Description of the invention
  • FIG. 1 shows the ignition device 3, shown essentially as a block diagram, in particular for a spark-ignition internal combustion engine, with an ignition transformer 1 having a primary winding 1 a and a secondary winding 1 d, to whose primary winding 1 a a DC voltage source can be applied.
  • the ignition device 3 comprises a current control device for controlling the current flowing through the primary winding 1 a of the ignition transformer 1.
  • This current control device consists of a preliminary stage 3a and a final stage 3c.
  • the output stage 3c essentially consists of a transistor T100 of a first conductivity type, namely a pnp transistor or pnp Darlington transistor, the collector of which is connected to the ground connection of the ignition device 3.
  • Decoupling means 3b are provided between the preliminary stage 3a and the final stage 3c, which decouple the preliminary stage 3a from the final stage 3c and which in particular protect the preliminary stage 3a from the high clamp voltage that occurs at the final stage 3c during the switch-off process.
  • the decoupling means 3b comprise a transistor T20 of a second conductivity type, the collector connection of which is connected to the base connection of the transistor T100 provided in the output stage 3c, and the emitter connection of which is connected to the ground connection of the ignition device 3 ⁇ are.
  • the base connection of the transistor 20 is connected to the preamplifier 3a of the ignition device 3 and is controlled by it.
  • the decoupling means comprise, in addition to the transistor T20, whose collector terminal is connected to the base terminal of the transistor TIOO via a resistor R21, a further transistor T25 which is connected in parallel to the emitter base path of the Transistor T20 is connected.
  • the collector terminal of transistor T25 is thus connected to the base terminal of transistor T20, while the emitter terminal of transistor T25 is connected to the ground terminal of the ignition device, to which the emitter terminal of transistor T20 is also connected via resistor E22.
  • the resistor R22 has the function of a current sensor resistor, ie, when there is a current flowing through the transistor T20 and the resistor E22, a voltage drop occurs across the resistor R22, which can be used for control purposes.
  • the base connection of the transistor T25 lies at the tap of a voltage divider formed from the resistors R23 and R24, which is connected between the base connection of the transistor T20 and the ground connection of the ignition device.
  • the partial resistance R24 of the voltage divider R23, R24 which is connected to the ground connection of the ignition device, is expediently designed to be able to exactly determine the base voltage of the transistor T25.
  • the adjustment is carried out in a particularly advantageous manner by connecting suitable additional resistors in parallel, which are initially connected in series with Zener diodes. Overloading the zener diodes destroys them and the additional resistors are connected in parallel to the partial resistor R24.
  • a ittermitter current regulation for T100 can be realized with T30 and the resistors R31, R32.
  • the decoupling means comprise a diode D41, the anode connection of which with the emitter connection of a drive transistor T40 in the preliminary stage and the cathode connection of which has the base connection of transistor T100 and via the load resistor R42 of transistor T40 are connected to the ground connection of the ignition device.
  • the diode must have at least the blocking capacity of the clamp voltage occurring on the T100.
  • the ignition device has the particular advantage that the transistor T100 arranged in the output stage 3c is directly conductively connected with its collector connection to the ground connection and can thus be mounted directly on a heat sink connected to the ground connection.
  • the dissipation of the power loss occurring during the operation of the ignition device is thus made extremely easier, since there is no need to arrange insulating layers that prevent heat flow between the collector connection of the transistor TIOO and a heat sink to be insulated from the collector connection.
  • the decoupling means described above are provided which prevent the pre-stage 3a from being impaired by the high clamp voltage that occurs when the transistor TIOO is switched off. It must also be ensured that after a scheduled shutdown of the transistor T100 arranged in the output stage 3c, its uncontrolled restarting is reliably prevented.
  • transistor T43 (FIG. 4), the collector connection of which is connected to the base connection of transistor T100, the emitter connection of which is connected to the emitter connection of transistor TIOO, and the base connection of which is connected via a resistor R44 to the positive connection of the DC voltage source.
  • This circuit arrangement ensures that the transistor T43 is only activated and switched through via its base connection if the base connection has a more negative potential than the emitter connection of the transistor T43.
  • the clamp voltage which is in the order of magnitude of approximately 400 volts, occurs, which could lead to an unintentional restart of the transistor T100.
  • a resistor R12 is arranged for the purpose of current measurement between the positive connection of the DC voltage source and the connection of the primary winding 1a of the ignition transformer 1 remote from the ground. When current flows through the primary winding 1a, a voltage drops across this resistor R12, which voltage can be fed to the preliminary stage 3a for control purposes.
  • a current measuring resistor R12 ' is arranged between the emitter connection of the transistor T100 and the ground-side connection of the primary winding la of the ignition transformer.
  • the voltage drop across the measuring resistor R12 ' is tapped via two high-impedance resistors R13, R14 and fed to input connections of the preliminary stage 3a which are protected by Zener diodes ZI, Z2 connected to ground.
  • the high voltage occurring at the two phases of the measuring resistor R12 * during the switch-off phase is decoupled via R13, R14, ZI and Z2.
  • a further transistor T30 is provided, which is connected in parallel with the series connection of the emitter base section of the transistor T100 and the current measuring resistor R12 '.
  • the emitter connection of the transistor T30 is connected to the ground-side connection of the primary winding la of the ignition transformer 1, its collector connection to the base connection of the transistor T100 and finally its base connection to the tap of a voltage divider R31, R32 located between the emitter and collector connection of the transistor T30.
  • the partial resistor R32 closer to the ground connection is also designed to be adjustable in this voltage divider R31, R32.
  • preliminary stage 3a, final stage 3c and the decoupling means 3b of the ignition device 3 are implemented using monolithically integrated technology. This means that even in large-scale production, the scattering can be extremely low achieve essential electrical characteristics.
  • the current measuring resistor R12 ' is expediently arranged as a distributed resistor on the emitter teeth of the emitter region of the transistor T100, as a result of which a good current distribution is ensured over the entire active emitter region of the transistor TIOO.
  • the decoupling means shown in the exemplary embodiment according to FIG. 3 can also be integrated with the transistors T20 and T25.
  • the transistor T43 provided in the exemplary embodiment according to FIG. 4 of the ignition device and preventing an uncontrolled reclosing of the transistor TIOO can also be monolithically integrated as a lateral pnp transistor in the base-emitter path of the transistor TIOO arranged in the output stage 3c.
  • Both the control stage 3a and the transistors T20, T25 or the decoupling diode D41 provided for decoupling purposes must be brought to the thick-film circuit in the form of separate chips and connected to the rest of the circuit by means of bond connections.
  • the resistors R33, R44 and R12 can be implemented as thick film resistors.
  • FIGS. 5 and 6 show the configuration of the output stage 3c of the ignition device 3 using monolithically integrated technology.
  • 5 shows the circuit diagram of the final stage, while FIG. 6 shows a cross section through a semiconductor substrate.
  • the output stage transistor T100 is designed as a two-stage Darlington transistor with the components T101 and T102.
  • the short-circuit designed as a pnp lateral transistor transistor marked with the reference numeral 43.
  • the resistors R50 and R51 shown in the circuit diagram according to FIG. 5 are integrated in a manner known per se to the person skilled in the art and are therefore no longer shown in FIG. FIG.
  • FIG. 6 shows with reference numeral 60 a high-resistance p-type substrate into which n-type base troughs 62, 63 and 64 are diffused. Highly doped p-type emitter zones 65, 66, 67 and 68 are in turn diffused into the aforementioned base troughs.
  • the base wells 62 and 63 represent the bases of the two transistors T101 and T102 belonging to the Darlington, while 64 represents the base well comprising the lateral short-circuit transistor T43.
  • the additional wells 69, 70 and 71 consist of n-type silicon highly doped with phosphorus.
  • the transistor arrangement thus comprises the three outer connecting lands 612 (base of the Darlington transistor), 617 (base of the lateral transistor) and 615 (emitter of the Darlington transistor).

Abstract

Dans un dispositif d'allumage (3), notamment pour moteurs à combustion interne à allumage extérieur, un dispositif de commande du courant composé d'un étage préliminaire (3a) et d'un étage final (3c) commande le passage du courant à travers l'enroulement primaire (1a) d'un transformateur d'allumage (1). L'étage final (3c) du dispositif de commande du courant comprend un transistor pnp (T100), dont la borne collecteur est directement connectée à la borne de mise à la masse du dispositif d'allumage afin d'améliorer la sortie de la ligne de pertes. Des éléments de découplage (3b) qui protègent l'étage préliminaire (3a) de la tension de retenue sont agencés entre l'étage préliminaire (3a) et l'étage final (3c).In an ignition device (3), in particular for internal combustion engines with external ignition, a current control device composed of a preliminary stage (3a) and a final stage (3c) controls the passage of current to through the primary winding (1a) of an ignition transformer (1). The final stage (3c) of the current control device comprises a pnp transistor (T100), the collector terminal of which is directly connected to the ground terminal of the ignition device in order to improve the output of the line of losses. Decoupling elements (3b) which protect the preliminary stage (3a) from the restraining voltage are arranged between the preliminary stage (3a) and the final stage (3c).

Description

Zündeinrichtung für eine Brennkraftmaschine Ignition device for an internal combustion engine
Stand der TechnikState of the art
Die Erfindung geht aus von einer Zündeinrichtung nach der Gattung des Hauptanspruchs, die aus DΞ-A-28 25 830 bekannt ist. Bei den bisher bekannten Zündeinrichtungen, die einen pnp-Transistor in der Endstufe verwenden, ist mit dem Kollektoranschluß des Transistors die Primärwicklung eines Zündtransformators verbunden, während der Emitteranschluß des Transistors, gegebenenfalls über einen Stromme߬ widerstand, mit dem Masseanschluß verbunden ist. Während des Betriebs der Zündeinrichtung treten an der Endstufe der Zündeinrich¬ tung hohe Verlustleistungen auf, die vom Kollektoranschluß zum Kühl¬ körper abgeführt werden müssen. Gleichzeitig muß aber der Kollektor¬ anschluß während der beim Abschaltvorgang auftretenden Klammer¬ spannung gegen den Kühlkörper elektrisch isoliert werden. Diese beiden entgegengesetzten Forderungen lassen sich nur mit einer ther¬ misch gutleitenden, elektrisch isolierenden Keramikschicht zwischen Kollektoranschluß und Kühlkörper erfüllen, die jedoch den Aufbau der Zündeinrichtung erheblich verteuert und die insbesondere bei Hoch¬ leistungszündeinrichtungen den auftretenden thermischen Wechselbe¬ lastungen nicht gewachsen ist. Vorteile der ErfindungThe invention relates to an ignition device according to the type of the main claim, which is known from DΞ-A-28 25 830. In the previously known ignition devices which use a pnp transistor in the output stage, the primary winding of an ignition transformer is connected to the collector terminal of the transistor, while the emitter terminal of the transistor is connected to the ground terminal, possibly via a current measuring resistor. During the operation of the ignition device, high power losses occur at the final stage of the ignition device, which have to be dissipated from the collector connection to the heat sink. At the same time, however, the collector connection must be electrically insulated from the heat sink during the clamp voltage occurring during the shutdown process. These two opposite requirements can only be met with a thermally highly conductive, electrically insulating ceramic layer between the collector connection and the heat sink, which, however, makes the construction of the ignition device considerably more expensive and which, in particular in the case of high-power ignition devices, is not able to withstand the thermal alternating loads that occur. Advantages of the invention
Die erfindungsgemäße Zündeinrichtung mit den kennzeichnenden Merk¬ malen des Hauptanspruchs hat demgegenüber den Vorteil, daß durch die Verwendung eines pnp-Transistors in der Endstufe der Zündeinrichtung und die thermisch und elektrisch gut leitenden Verbindung seines Kollektoranschlusses mit dem Masseanschluß der Züneinrichtung eine große Verlustleistung betriebssicher abgeführt werden kann. Durch die Einsparung isolierender Schichten zwischen dem Kollektoranschluß und dem Masseanschluß wird zudem der Aufbau der Zündeinrichtung ver¬ einfacht und dadurch verbilligt. Schließlich läßt sich der über¬ wiegende Teil der Zündeinrichtung in besonders vorteilhafter Weise monolithisch integrieren, wodurch auch große Stückzahlen mit engen elektrischen Kennwerten herstellbar sind.The ignition device according to the invention with the characterizing features of the main claim has the advantage that a large power loss can be reliably discharged through the use of a pnp transistor in the output stage of the ignition device and the thermally and electrically conductive connection of its collector connection to the earth connection of the ignition device can. By saving insulating layers between the collector connection and the ground connection, the structure of the ignition device is also simplified and thereby cheaper. Finally, the predominant part of the ignition device can be integrated monolithically in a particularly advantageous manner, as a result of which large numbers of items with narrow electrical characteristics can also be produced.
Durch die in den Unteransprüchen aufgeführten Maßnahmen sind vor¬ teilhafte Weiterbildungen und Ausgestaltungen der im Hauptanspruch angegebenen Zündeinrichtung möglich.The measures listed in the subclaims allow advantageous developments and refinements of the ignition device specified in the main claim.
Zeichnungdrawing
Ausführungsbeispiele der Erfindung sind in der Zeichnung anhand mehrerer Figuren dargestellt und in der nachfolgenden Beschreibung näher erläutert. Es zeigen Figur 1 ein Blockschaltbild der Zündein¬ richtung, Figur 2 den Stromlaufplan eines Teiles der Zündeinrichtung mit der Endstufe und den Entkopplungsmitteln, Figur 3 ein weiteres Ausführungsbeispiel der Zündeinrichtung mit Darstellung der Endstufe und der Entkopplungsmittel, Figur 4 die Zündeinrichtung mit Dar¬ stellung einer Wiedereinschaltsperre in der Endstufe und einer Ent- koppelungεdiode in der Vorstufe, Figur 5 als Stromlaufplan ein Ausführungsbeispiel der Endstufe der Zündeinrichtung in monolithisch integrierter Technik und Figur 6 einen Querschnitt durch ein Halbleitersubstrat. Beschreibung der ErfindungExemplary embodiments of the invention are shown in the drawing using several figures and are explained in more detail in the following description. 1 shows a block diagram of the ignition device, FIG. 2 shows the circuit diagram of a part of the ignition device with the output stage and the decoupling means, FIG. 3 shows a further exemplary embodiment of the ignition device with illustration of the output stage and the decoupling means, FIG. 4 shows the ignition device with an illustration of a Reclosure lock in the final stage and a decoupling diode in the preliminary stage, FIG. 5 shows a circuit diagram of an exemplary embodiment of the final stage of the ignition device using monolithically integrated technology, and FIG. 6 shows a cross section through a semiconductor substrate. Description of the invention
Figur 1 zeigt die im wesentlichen als Blockschaltbild dargestellte Zündeinrichtung 3, insbesondere für eine fremdgezündete Brennkraft¬ maschine, mit einem eine Primärwicklung la und eine Sekundärwicklung ld aufweisenden Zündtransformator 1, an dessen Primärwicklung la eine Gleichspannungsquelle anlegbar ist. Die Zündeinrichtung 3 umfaßt eine Stromsteuereinrichtung zur Steuerung des durch die Primärwicklung la des Zündtransformators 1 fließenden Stromes. Diese Stromsteuereinrichtung besteht aus einer Vorstufe 3a und einer End¬ stufe 3c. Die Endstufe 3c besteht im wesentlichen aus einem Tran¬ sistor T100 eines ersten Leitfähigkeitstyps, nämlich einem pnp-Tran¬ sistor oder pnp-Darlington-Transistor, dessen Kollektor mit dem Masseanschluß der Zündeinrichtung 3 verbunden ist. Zwischen Vorstufe 3a und Endstufe 3c sind Entkopplungsmittel 3b vorgesehen, die die Vorstufe 3a von der Endstufe 3c entkoppeln und die insbesondere die Vorstufe 3a vor der jeweils beim Abschaltvorgang an der Endstufe 3c auftretenden hohen Klammerspannung schützen. Wie in Figur 2 darge¬ stellt, umfassen bei einem Ausführungsbeispiel der Zündeinrichtung die Entkopplungsmittel 3b einen Transistor T20 eines zweiten Leit¬ fähigkeitstyps, dessen Kollektoranschluß mit dem Basisanschluß des in der Endstufe 3c vorgesehenen Transistors T100, und dessen Emitteranschluß mit dem Masseanschluß der Zündeinrichtung 3 verbun¬ den sind. Der Basisanschluß des Transistors 20 ist mit der Vorstufe 3a der Zündeinrichtung 3 verbunden und wird von dieser angesteuert. Da der Transistor T100 ein pnp-Transistor ist, wird als Entkopp¬ lungstransistor T20 ein Transistor vom npn-Typ eingesetzt. Dieser muß mindestens das gleiche Sperrvermögen, wie die am T100 auftre¬ tende Klammerspannung haben. In einem weiteren Ausführungsbeispiel der Zündeinrichtung (Figur 3) umfassen die Entkopplungsmittel neben dem Transistor T20, dessen Kollektoranschluß über einen Widerstand R21 mit dem Basisanschluß des Transistors TIOO verbunden ist, einen weiteren Transistor T25, der parallel zur Emitter-Basisstrecke des Transistors T20 geschaltet ist. Der Kollektoranschluß des Tran¬ sistors T25 ist also mit dem Basisanschluß des Transistors T20 ver¬ bunden, während der Emitteranschluß des Transistors T25 mit dem Masseanschluß der Zündeinrichtung verbunden ist, an dem auch über den Widerstand E22 der Emitteranschluß des Transistors T20 liegt. Der Widerstand R22 hat die Funktion eines Stromfühlerwiderstandes, d. h., bei einem Stromfluß durch den Transistor T20 und den Wider¬ stand E22 tritt am Widerstand R22 ein Spannungsabfall auf, der für Steuerzwecke einsetzbar ist. Der Basisanschluß des Transistors T25 liegt am Abgriff eines aus den Widerständen R23 und R24 gebildeten Spannungsteilers, der zwischen dem Basisanschluß des Transistors T20 und den Masseanschluß der Zündeinrichtung geschaltet ist. Zweckmäßig ist dabei zur exakten Festlegung der Basisspannung des Transistors T25 der mit dem Masseanschluß der Zündeinrichtung verbundene Teil¬ widerstand R24 des Spannungsteilers R23, R24 abgleichbar ausge¬ bildet. Auf besonders vorteilhafte Weise erfolgt der Abgleich durch Parallelschaltung geeigneter Zusatzwiderstände, die zunächst mit Zenerdioden in Reihe geschaltet sind. Durch Überlastung der Zener- dioden werden diese zerstört und die Zusatzwiderstände parallel zum Teilwiderstand R24 geschaltet. In der gleichen Weise, wie mit T25 und T20 der Baustrom für T100 eingeregelt wird, läßt sich alternativ mit T30 und den Widerständen R31, R32 eine Ξmitterstromregelung für T100 realisieren.FIG. 1 shows the ignition device 3, shown essentially as a block diagram, in particular for a spark-ignition internal combustion engine, with an ignition transformer 1 having a primary winding 1 a and a secondary winding 1 d, to whose primary winding 1 a a DC voltage source can be applied. The ignition device 3 comprises a current control device for controlling the current flowing through the primary winding 1 a of the ignition transformer 1. This current control device consists of a preliminary stage 3a and a final stage 3c. The output stage 3c essentially consists of a transistor T100 of a first conductivity type, namely a pnp transistor or pnp Darlington transistor, the collector of which is connected to the ground connection of the ignition device 3. Decoupling means 3b are provided between the preliminary stage 3a and the final stage 3c, which decouple the preliminary stage 3a from the final stage 3c and which in particular protect the preliminary stage 3a from the high clamp voltage that occurs at the final stage 3c during the switch-off process. As shown in FIG. 2, in one embodiment of the ignition device, the decoupling means 3b comprise a transistor T20 of a second conductivity type, the collector connection of which is connected to the base connection of the transistor T100 provided in the output stage 3c, and the emitter connection of which is connected to the ground connection of the ignition device 3 ¬ are. The base connection of the transistor 20 is connected to the preamplifier 3a of the ignition device 3 and is controlled by it. Since the transistor T100 is a pnp transistor, a transistor of the npn type is used as the decoupling transistor T20. This must have at least the same blocking capacity as the clamp voltage occurring on the T100. In a further exemplary embodiment of the ignition device (FIG. 3), the decoupling means comprise, in addition to the transistor T20, whose collector terminal is connected to the base terminal of the transistor TIOO via a resistor R21, a further transistor T25 which is connected in parallel to the emitter base path of the Transistor T20 is connected. The collector terminal of transistor T25 is thus connected to the base terminal of transistor T20, while the emitter terminal of transistor T25 is connected to the ground terminal of the ignition device, to which the emitter terminal of transistor T20 is also connected via resistor E22. The resistor R22 has the function of a current sensor resistor, ie, when there is a current flowing through the transistor T20 and the resistor E22, a voltage drop occurs across the resistor R22, which can be used for control purposes. The base connection of the transistor T25 lies at the tap of a voltage divider formed from the resistors R23 and R24, which is connected between the base connection of the transistor T20 and the ground connection of the ignition device. The partial resistance R24 of the voltage divider R23, R24, which is connected to the ground connection of the ignition device, is expediently designed to be able to exactly determine the base voltage of the transistor T25. The adjustment is carried out in a particularly advantageous manner by connecting suitable additional resistors in parallel, which are initially connected in series with Zener diodes. Overloading the zener diodes destroys them and the additional resistors are connected in parallel to the partial resistor R24. In the same way as the construction current for T100 is regulated with T25 and T20, alternatively a ittermitter current regulation for T100 can be realized with T30 and the resistors R31, R32.
In einem weiteren Ausführungsbeispiel der Zündeinrichtung (Figur 4) umfassen die Entkopplungsmittel eine Diode D41, deren Anodenanschluß mit dem Emitteranschluß eines Ansteuertransistors T40 in der Vor¬ stufe und deren Kathodenanschluß mit dem Basisanschluß des Tran¬ sistors T100 und über den Lastwiderstand R42 des Transistors T40 mit dem Masseanschluß der Zündeinrichtung verbunden sind. Auch hier muß die Diode mindestens das Sperrvermögen der am T100 auftretenden Klammerspannung haben. Die Zündeinrichtung bietet den besonderen Vorteil, daß der in der Endstufe 3c angeordnete Transistor T100 mit seinem Kollektoranschluß unmittelbar mit dem Masseanschluß elektrisch leitend verbunden ist und somit unmittelbar auf einem mit dem Masseanschluß verbundenen Kühlkörper montiert werden kann. Im Gegensatz zu herkömmlichen Zündeinrichtungen wird somit die Ableitung der während des Betriebs der Zündeinrichtung auftretenden Verlustleistung außerordentlich erleichtert, da keine den Wärmefluß behindernden Isolierschichten zwischen dem Kollektoranschluß des Transistors TIOO und einem vom Kollektoranschluß zu isolierenden Kühlkörper angeordnet werden müssen. Zusätzlich ergibt sich dadurch der Vorteil, daß der Aufbau einer solchen Zündeinrichtung wesentlich vereinfacht wird, wodurch diese erheblich preisgünstiger herstellbar ist. Um einen störungs¬ freien Betrieb der Zündeinrichtung zu gewährleisten, werden die zuvor beschriebenen Entkopplungsmittel vorgesehen, die eine Beein¬ trächtigung der Vorstufe 3a durch die beim Abschalten des Tran¬ sistors TIOO auftretende hohe Klammerspannung verhindern. Weiter ist dafür zu sorgen, daß nach einem planmäßigen Abschalten des in der Endstufe 3c angeordneten Transistors T100 sein unkontrolliertes Wiedereinschalten zuverlässig verhindert wird. Dies wird durch einen weiteren Transistor T43 erreicht (Figur 4), dessen Kollektoranschluß mit dem Basisanschluß des Transistors T100, dessen Emitteranschluß mit dem Emitteranschluß des Transistors TIOO und dessen Basisan¬ schluß über einen Widerstand R44 mit dem positiven Anschluß der Gleichspannungsquelle verbunden ist. Durch diese Schaltungsanordnung wird gewährleistet, daß der Transistor T43 über seinen Basisanschluß nur dann angesteuert und durchgeschaltet wird, wenn der Basisan¬ schluß ein negativeres Potential aufweist als der Emitteranschluß des Transistors T43. Dies ist jedoch nur dann der Fall, wenn beim Abschalten des Transistors TIOO die in der Größenordnung von etwa 400 Volt liegende Klammerspannung auftritt, die zu einem ungewollten Wiedereinschalten des Transistors T100 führen könnte. In den Ausführungsbeispielen der Zündeinrichtung nach Figur 1 und Figur 4 ist zum Zwecke der Strommessung zwischen dem positiven An¬ schluß der Gleichspannungsquelle und dem massefernen Anschluß der Primärwicklung la des Zündtransformators 1 ein Widerstand R12 ange¬ ordnet. Bei Stromfluß durch die Primärwicklung la fällt an diesem Widerstand R12 eine Spannung ab, die der Vorstufe 3a für Steuer¬ zwecke zuführbar ist. In den Ausführungsbeispielen der Zündeinrich¬ tung nach Figur 2 und 3 ist ein Strommeßwiderstand R12' zwischen den Emitteranschluß des Transistors T100 und dem masseseitigen An¬ schluß der Primärwicklung la des Zündtransformators angeordnet. Im Ausführungsbeispiel nach Figur 2 wird der Spannungsabfall am Me߬ widerstand R12' über zwei hochohmige Widerstände R13, R14 abge¬ griffen und Eingangsanschlüssen der Vorstufe 3a zugeführt, die mit gegen Masse geschalteten Zenerdioden ZI, Z2 geschützt sind. Die bei der Abschaltphase an beiden Anschlüsen des Meßwiderstandes R12* auf¬ tretende Hochspannung wird über R13, R14, ZI und Z2 abgekoppelt. Im Ausführungsbeispiel nach Figur 3 ist ein weiterer Transistor T30 vorgesehen, der parallel zur Reihenschaltung von Emitter-Basis¬ strecke des Transistors T100 und Strommeßwiderstand R12' geschaltet ist. Dabei sind der Emitteranschluß des Transistors T30 mit dem masseseitigen Anschluß der Primärwicklung la des Zündtransformators 1, sein Kollektoranschluß mit dem Basisanschluß des Transistors T100 und schließlich sein Basisanschluß mit dem Abgriff eines zwischen Emitter- und Kollekteranschluß des Transistors T30 liegenden Spannungsteilers R31, R32 verbunden. Wie bereits zuvor im Zusammen¬ hang mit dem Entkoppeltransistor T25- beschrieben, wird auch bei diesem Spannungsteiler R31, R32 der dem Masseanschluß nähere Teil¬ widerstand R32 abgleichbar ausgebildet.In a further exemplary embodiment of the ignition device (FIG. 4), the decoupling means comprise a diode D41, the anode connection of which with the emitter connection of a drive transistor T40 in the preliminary stage and the cathode connection of which has the base connection of transistor T100 and via the load resistor R42 of transistor T40 are connected to the ground connection of the ignition device. Here too, the diode must have at least the blocking capacity of the clamp voltage occurring on the T100. The ignition device has the particular advantage that the transistor T100 arranged in the output stage 3c is directly conductively connected with its collector connection to the ground connection and can thus be mounted directly on a heat sink connected to the ground connection. In contrast to conventional ignition devices, the dissipation of the power loss occurring during the operation of the ignition device is thus made extremely easier, since there is no need to arrange insulating layers that prevent heat flow between the collector connection of the transistor TIOO and a heat sink to be insulated from the collector connection. In addition, this results in the advantage that the structure of such an ignition device is considerably simplified, as a result of which it can be produced at considerably lower cost. In order to ensure trouble-free operation of the ignition device, the decoupling means described above are provided which prevent the pre-stage 3a from being impaired by the high clamp voltage that occurs when the transistor TIOO is switched off. It must also be ensured that after a scheduled shutdown of the transistor T100 arranged in the output stage 3c, its uncontrolled restarting is reliably prevented. This is achieved by a further transistor T43 (FIG. 4), the collector connection of which is connected to the base connection of transistor T100, the emitter connection of which is connected to the emitter connection of transistor TIOO, and the base connection of which is connected via a resistor R44 to the positive connection of the DC voltage source. This circuit arrangement ensures that the transistor T43 is only activated and switched through via its base connection if the base connection has a more negative potential than the emitter connection of the transistor T43. However, this is only the case if, when the transistor TIOO is switched off, the clamp voltage, which is in the order of magnitude of approximately 400 volts, occurs, which could lead to an unintentional restart of the transistor T100. In the exemplary embodiments of the ignition device according to FIGS. 1 and 4, a resistor R12 is arranged for the purpose of current measurement between the positive connection of the DC voltage source and the connection of the primary winding 1a of the ignition transformer 1 remote from the ground. When current flows through the primary winding 1a, a voltage drops across this resistor R12, which voltage can be fed to the preliminary stage 3a for control purposes. In the exemplary embodiments of the ignition device according to FIGS. 2 and 3, a current measuring resistor R12 'is arranged between the emitter connection of the transistor T100 and the ground-side connection of the primary winding la of the ignition transformer. In the exemplary embodiment according to FIG. 2, the voltage drop across the measuring resistor R12 'is tapped via two high-impedance resistors R13, R14 and fed to input connections of the preliminary stage 3a which are protected by Zener diodes ZI, Z2 connected to ground. The high voltage occurring at the two phases of the measuring resistor R12 * during the switch-off phase is decoupled via R13, R14, ZI and Z2. In the exemplary embodiment according to FIG. 3, a further transistor T30 is provided, which is connected in parallel with the series connection of the emitter base section of the transistor T100 and the current measuring resistor R12 '. The emitter connection of the transistor T30 is connected to the ground-side connection of the primary winding la of the ignition transformer 1, its collector connection to the base connection of the transistor T100 and finally its base connection to the tap of a voltage divider R31, R32 located between the emitter and collector connection of the transistor T30. As already described above in connection with the decoupling transistor T25, the partial resistor R32 closer to the ground connection is also designed to be adjustable in this voltage divider R31, R32.
In besonders vorteilhafter Weise werden Vorstufe 3a, Endstufe 3c sowie die Entkopplungsmittel 3b der Zündeinrichtung 3 in mono¬ lithisch integrierter Technik ausgeführt. Dadurch lassen sich auch in Großserienherstellung außerordentlich geringe Streuungen der wesentlichen elektrischen Kennwerte erzielen. Bei Ausführung der Zündeinrichtung 3 in integrierter Technik wird der Strommeßwider¬ stand R12' zweckmäßig als verteilter Widerstand an den Emitterzähnen des Emitterbereichs des Transistors T100 angeordnet, wodurch für eine gute Stromgleichverteilung über das gesamte aktive Emitter¬ gebiet des Transistors TIOO gesorgt wird. Strommeßwiderstand R12' und die in Figur 3 in Zusammenhang mit der Endstufe dargestellte Stromregelschaltung werden dabei zweckmäßig in die Emitter-Basis¬ strecke des pnp-Transistors T100 integriert, wobei der Transistor T30 als lateraler pnp-Transistor ausgestaltet ist. In gleicher Weise können auch die im Ausführungsbeispiel nach Figur 3 dargestellten Entkopplungsmittel mit den Transistoren T20 und T25 integriert werden. Auch der im Ausführungsbeispiel nach Figur 4 der Zündein¬ richtung vorgesehene, eine unkontrollierte Wiedereinschaltung des Transistors TIOO verhindernde Transistor T43, kann als lateraler pnp-Transistor in die Basis-Emitterstrecke des in der Endstufe 3c angeordneten Transistors TIOO monolithisch integriert werden.In a particularly advantageous manner, preliminary stage 3a, final stage 3c and the decoupling means 3b of the ignition device 3 are implemented using monolithically integrated technology. This means that even in large-scale production, the scattering can be extremely low achieve essential electrical characteristics. When the ignition device 3 is designed using integrated technology, the current measuring resistor R12 'is expediently arranged as a distributed resistor on the emitter teeth of the emitter region of the transistor T100, as a result of which a good current distribution is ensured over the entire active emitter region of the transistor TIOO. Current measuring resistor R12 'and the current control circuit shown in FIG. 3 in connection with the output stage are expediently integrated into the emitter base section of the pnp transistor T100, the transistor T30 being designed as a lateral pnp transistor. In the same way, the decoupling means shown in the exemplary embodiment according to FIG. 3 can also be integrated with the transistors T20 and T25. The transistor T43 provided in the exemplary embodiment according to FIG. 4 of the ignition device and preventing an uncontrolled reclosing of the transistor TIOO can also be monolithically integrated as a lateral pnp transistor in the base-emitter path of the transistor TIOO arranged in the output stage 3c.
Sowohl die Ansteuerstufe 3a als auch die für Entkopplungszwecke vor¬ gesehenen Transistoren T20, T25 oder die Entkoppeldiode D41 müssen in Form von separaten Chips auf die Dickschichttschaltung gebracht und mittels Bondverbindungen an die übrige Schaltung angeschlossen werden. Die Widerstände R33, R44 und R12 sind als Dickschichtfilm¬ widerstände zu realisieren.Both the control stage 3a and the transistors T20, T25 or the decoupling diode D41 provided for decoupling purposes must be brought to the thick-film circuit in the form of separate chips and connected to the rest of the circuit by means of bond connections. The resistors R33, R44 and R12 can be implemented as thick film resistors.
Anhand von Figur 5 und Figur 6 wird beispielhaft die Ausgestaltung der Endstufe 3c der Zündeinrichtung 3 in monolithisch integrierter Technik erläutert. Dabei zeigt Figur 5 den Stromlaufplan der End¬ stufe, während Figur 6 einen Querschnitt durch ein Halbleitersub¬ strat darstellt. Der Endstufentransistor T100 ist dabei als zwei¬ stufiger Darlington-Transistor mit den Bestandteilen T101 und T102 ausgeführt. In Übereinstimmung mit dem Ausführungsbeispiel nach Figur 4 ist der als pnp-Lateraltransistor ausgestaltete Kurzschluß- transistor mit der Bezugsziffer 43 gekennzeichnet. Die Integration der im Stromlaufplan nach Figur 5 dargestellten Widerstände R50 und R51 erfolgt in einer dem Fachmann an sich bekannten Weise und ist daher in Figur 6 nicht mehr dargestellt. Figur 6 zeigt mit Bezugs¬ ziffer 60 ein hochohmiges p-leitendes Substrat, in die n-leitende Basiswannen 62, 63 und 64 eingediffundiert sind. In die vorgenannten Basiswannen sind wiederum hoch dotierte p-leitende Emitterzonen 65, 66, 67 und 68 eindiffundiert. Dabei stellen die Basiswannen 62 und 63 die Basen der beiden zum Darlington gehörenden Transistoren T101 und T102 dar, während 64 die den lateralen Kurzschlußtransistor T43 umfassende Basiswanne darstellt. Die zusätzlichen Wannen 69, 70 und 71 bestehen aus hoch mit Phosphor dotiertem n-leitenden Silicium. Sie dienen zunächst der Herstellung niederohmiger Kontakte 612, 614 und 617 auf den sonst hochohmig mit Phosphor dotierten Basiswannen. Zum anderen üben diese hochdotierten Phosphorschichten eine getternde Wirkung aus, die für das Sperrverhalten und gleichzeitig für die Verstärkung der Transistoren T43, T101 und T102 günstig ist. Die äußeren Verbindungsleitungen 612 bis 618 werden nun wie folgt miteinander verknüpft. Die Zusammenschaltung der Transistoren T101 und T102 zu einem Darlingtonpaar erfolgt in der Weise, daß die Anschlüsse 613 und 614 miteinander verbunden werden, während der Anschluß 612 der äußere Basisanschluß und der Anschluß 615 der äußere Emitteranschluß des Darlingtontransistors sind. Zur Inte¬ gration des pnp-Lateraltransistors T43 wird dessen lateraler Kollek¬ toranschluß 618 mit dem Basisanschluß 612 des Darlingtontransistors T101, T102 und der laterale Emitteranschluß 616 des Transistors T43 mit dem Emitteranschluß 615 des Darlingtontransistors verbunden. Somit umfaßt die Transistoranordnung die drei äußeren Anschlußlands 612 (Basis des Darlingtontransistors), 617 (Basis des Lateraltran¬ sistors) und 615 (Emitter des Darlingtontransistors). The configuration of the output stage 3c of the ignition device 3 using monolithically integrated technology is explained using FIGS. 5 and 6 as an example. 5 shows the circuit diagram of the final stage, while FIG. 6 shows a cross section through a semiconductor substrate. The output stage transistor T100 is designed as a two-stage Darlington transistor with the components T101 and T102. In accordance with the exemplary embodiment according to FIG. 4, the short-circuit designed as a pnp lateral transistor transistor marked with the reference numeral 43. The resistors R50 and R51 shown in the circuit diagram according to FIG. 5 are integrated in a manner known per se to the person skilled in the art and are therefore no longer shown in FIG. FIG. 6 shows with reference numeral 60 a high-resistance p-type substrate into which n-type base troughs 62, 63 and 64 are diffused. Highly doped p-type emitter zones 65, 66, 67 and 68 are in turn diffused into the aforementioned base troughs. The base wells 62 and 63 represent the bases of the two transistors T101 and T102 belonging to the Darlington, while 64 represents the base well comprising the lateral short-circuit transistor T43. The additional wells 69, 70 and 71 consist of n-type silicon highly doped with phosphorus. They are initially used to produce low-resistance contacts 612, 614 and 617 on the base troughs which are otherwise doped with high-resistance phosphorus. On the other hand, these highly doped phosphor layers exert a gettering effect which is favorable for the blocking behavior and at the same time for the amplification of the transistors T43, T101 and T102. The outer connecting lines 612 to 618 are now linked to one another as follows. The interconnection of transistors T101 and T102 to form a Darlington pair is such that connections 613 and 614 are connected to one another, while connection 612 is the outer base connection and connection 615 is the outer emitter connection of the Darlington transistor. To integrate the pnp lateral transistor T43, its lateral collector terminal 618 is connected to the base terminal 612 of the Darlington transistor T101, T102 and the lateral emitter terminal 616 of the transistor T43 is connected to the emitter terminal 615 of the Darlington transistor. The transistor arrangement thus comprises the three outer connecting lands 612 (base of the Darlington transistor), 617 (base of the lateral transistor) and 615 (emitter of the Darlington transistor).

Claims

Ansprüche Expectations
1. Zündeinrichtung, insbesondere für eine fremdgezündete Brennkraft¬ maschine, mit einem eine Primär- und eine Sekundärwicklung auf¬ weisenden Zündtransformator, mit einer an die Primärwicklung anleg¬ baren Gleichspannungsquelle, mit einer aus einer Vorstufe und einer Endstufe bestehenden Stromsteuereinrichtung zur Steuerung des durch die Primärwicklung fließenden Stromes, dadurch gekennzeichnet, daß die Endstufe (3c) der Stromsteuereinrichtung einen Transistor (TIOO) eines ersten Leitfähigkeitstyps umfaßt, dessen Kollektoranschluß mit dem Masseanschluß der Zündeinrichtung verbunden ist, daß zwischen der Vorstufe (3a) und der Endstufe (3c) Entkopplungsmittel (3b) sowie Mittel zur Veränderung des unkontrollierten Ξinschaltens der Endstufe (3c) vorgesehen sind.1. Ignition device, in particular for an externally ignited internal combustion engine, with an ignition transformer having a primary and a secondary winding, with a direct voltage source that can be applied to the primary winding, with a current control device consisting of a preliminary stage and a final stage for controlling the current through the Primary winding flowing current, characterized in that the output stage (3c) of the current control device comprises a transistor (TIOO) of a first conductivity type, the collector connection of which is connected to the ground connection of the ignition device, that between the preliminary stage (3a) and the output stage (3c) decoupling means ( 3b) and means for changing the uncontrolled switching on of the output stage (3c) are provided.
2. Zündeinrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die Entkopplungsmittel (3b) einen Transistor (T20) eines zweiten Leit¬ fähigkeitstyps umfassen, dessen Kollektoranschluß mit dem Basisan¬ schluß des Transistors (T100) und dessen Emitteranschluß mit dem Masseanschluß der Zündeinrichtung verbunden sind, und der über seinen Basisanschluß von der Vorstufe (3a) der Stromsteuereinrich¬ tung ansteuerbar ist. 2. Ignition device according to claim 1, characterized in that the decoupling means (3b) comprise a transistor (T20) of a second conductivity type, the collector connection of which is connected to the base connection of the transistor (T100) and the emitter connection of which is connected to the ground connection of the ignition device , and which can be controlled via its base connection by the preliminary stage (3a) of the current control device.
3. Zündeinrichtung nach einem der Ansprüche 1 und 2, dadurch gekenn¬ zeichnet, daß die Endstufe (3c) eine Strommeßeinrichtung umfaßt, deren Ausgangssignal der Vorstufe (3a) zugeführt wird.3. Ignition device according to one of claims 1 and 2, characterized gekenn¬ characterized in that the output stage (3c) comprises a current measuring device, the output signal of the preliminary stage (3a) is supplied.
4. Zündeinrichtung nach einem der Ansprüche 1 bis 3, dadurch gekenn¬ zeichnet, daß die Strommeßeinrichtung aus einem Widerstand (R12, R12' ) besteht und daß die bei Stromfluß durch die Primärwicklung (la) des Zündtransformators (1) an ihm abfallende Spannung der Vor¬ stufe (3a) zugeführt wird.4. Ignition device according to one of claims 1 to 3, characterized gekenn¬ characterized in that the current measuring device consists of a resistor (R12, R12 ') and that when the current flows through the primary winding (la) of the ignition transformer (1) dropping at him the voltage of Vor¬ stage (3a) is supplied.
5. Zündeinrichtung nach einem der Ansprüche 1 bis 4, dadurch gekenn¬ zeichnet, daß die Anschlüsse des Widerstandes (R12') über hochohmige Widerstände (R13, R14) mit Eingangsanschlüssen der Vorstufe (3a) verbunden sind, welche Eingangsanschlüsse durch mit Masse verbundene Zenerdioden (ZI, Z2) geschützt sind.5. Ignition device according to one of claims 1 to 4, characterized gekenn¬ characterized in that the connections of the resistor (R12 ') via high-resistance resistors (R13, R14) are connected to input connections of the preamplifier (3a), which input connections through Zener diodes connected to ground (ZI, Z2) are protected.
6. Zündeinrichtung nach einem der Ansprüche 1 bis 5, dadurch gekenn¬ zeichnet, daß die Vorstufe (3a) einen Ansteuertransistor (T40) um¬ faßt und daß zum Schutz der Vorstufe (3a) gegen primärseitig auf¬ tretende Spannungspitzen eine Diode (D41) vorgesehen ist, deren Anodenanschluß mit dem Emitteranschluß das Ansteuertransistors (40) und deren Kathodenanschluß mit dem Basisanschluß des Transistors (T100) und über den Lastwiderstand (R42) des Transistors (T40) mit dem Masseanschluß der Zündeinrichtung verbunden ist.6. Ignition device according to one of claims 1 to 5, characterized gekenn¬ characterized in that the preliminary stage (3a) comprises a drive transistor (T40) and that to protect the preliminary stage (3a) against voltage peaks occurring on the primary side a diode (D41) is provided, the anode connection of which is connected to the emitter connection of the drive transistor (40) and the cathode connection of which is connected to the base connection of the transistor (T100) and via the load resistor (R42) of the transistor (T40) to the ground connection of the ignition device.
7. Zündeinrichtung nach einem der Ansprüche 1 bis 6, dadurch gekenn¬ zeichnet, daß die Mittel zur Verhinderung des unkontrollierten Ein- schaltens der Endstufe (3c) einen Transistor (T43) umfassen, dessen Kollektoranschluß mit dem Basisanschluß des Transistors (T100), dessen Emitteranschluß mit dem Emitteranschluß des Transistors (T100), und dessen Basisanschluß über einen Widerstand (R44) mit dem positiven Anschluß der Gleichspannungsquelle verbunden sind. 7. Ignition device according to one of claims 1 to 6, characterized gekenn¬ characterized in that the means for preventing the uncontrolled switching on of the output stage (3c) comprise a transistor (T43), the collector terminal with the base terminal of the transistor (T100), the Emitter connection to the emitter connection of the transistor (T100), and the base connection of which is connected via a resistor (R44) to the positive connection of the DC voltage source.
8. Zündeinrichtung nach einem der Ansprüche 1 bis 7, dadurch gekenn¬ zeichnet, daß die Vorstufe (3a), die Endstufe (3c) und gegebenen¬ falls die Entkopplungsmittel (3b) in monolithisch integrierter Tech¬ nik hergestellt sind.8. Ignition device according to one of claims 1 to 7, characterized gekenn¬ characterized in that the preliminary stage (3a), the final stage (3c) and optionally the decoupling means (3b) are made in monolithically integrated technology.
9. Zündeinrichtung nach einem der Ansprüche 1 bis 8, dadurch gekenn¬ zeichnet, daß ein Strommeßwiderstand (R12') zwischen dem Emitter¬ anschluß des Transistors (T100) und dem masseseitigen Anschluß der Primärwicklung (la) angeordnet ist, daß der Emitteranschluß eines Transistors (T30) mit dem masseseitigen Anschluß der Primärwicklung (la), daß der Kollektoranschluß des Transistors (T30) mit dem Basis¬ anschluß des Transistors (T100) und des schließlich der Basisan¬ schluß des Transistors (T30) mit den Abgriff eines zwischen dem Emitter- und dem Kollektoranschluß des Transistors (T30) liegenden Spannungsteilers (R31, R32) verbunden ist. 9. Ignition device according to one of claims 1 to 8, characterized gekenn¬ characterized in that a current measuring resistor (R12 ') is arranged between the emitter connection of the transistor (T100) and the ground connection of the primary winding (la) that the emitter connection of a transistor (T30) with the ground connection of the primary winding (la), that the collector connection of the transistor (T30) with the base connection of the transistor (T100) and finally the base connection of the transistor (T30) with the tap one between the emitter - And the collector terminal of the transistor (T30) lying voltage divider (R31, R32) is connected.
EP88905693A 1987-10-21 1988-07-07 Ignition device for internal combustion engines Expired - Lifetime EP0383768B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873735631 DE3735631A1 (en) 1987-10-21 1987-10-21 IGNITION DEVICE FOR A COMBUSTION ENGINE
DE3735631 1987-10-21

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Publication Number Publication Date
EP0383768A1 true EP0383768A1 (en) 1990-08-29
EP0383768B1 EP0383768B1 (en) 1993-05-19

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JP (1) JPH03500673A (en)
DE (2) DE3735631A1 (en)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785720B1 (en) 1998-05-23 2004-08-31 Samsung Electronics Co., Ltd. Method for connecting to server devices in browser-based home network apparatus therefor

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3839039A1 (en) * 1988-11-18 1990-05-23 Bosch Gmbh Robert IGNITION STAGE OF A TRANSISTOR IGNITION SYSTEM
IT1239867B (en) * 1990-01-26 1993-11-15 Weber Srl IDENTIFICATION SYSTEM OF THE PHASES OF AN ENDOTHERMAL ENGINE
JP2568813Y2 (en) * 1992-02-19 1998-04-15 三菱電機株式会社 Ignition device for internal combustion engine
US5529046A (en) * 1995-01-06 1996-06-25 Xerox Corporation High voltage ignition control apparatus for an internal combustion engine
DE19624530A1 (en) * 1996-06-20 1998-01-02 Bosch Gmbh Robert Circuit arrangement of an ignition output stage, in particular for an ignition circuit of a motor vehicle

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1447597A (en) * 1965-09-16 1966-07-29 Rca Corp Transistor ignition circuits, in particular for motor vehicles
FR2217566A1 (en) * 1973-02-10 1974-09-06 Lucas Electrical Co Ltd
US3945362A (en) * 1973-09-17 1976-03-23 General Motors Corporation Internal combustion engine ignition system
DE2531337C3 (en) * 1975-07-12 1978-11-23 Robert Bosch Gmbh, 7000 Stuttgart Ignition device for an internal combustion engine
US4106462A (en) * 1976-03-18 1978-08-15 General Electric Company Ignition system control circuit
GB1594348A (en) * 1976-10-28 1981-07-30 Lucas Industries Ltd Ignition systems for internal combustion engines
DE2747819A1 (en) * 1977-10-25 1979-04-26 Siemens Aag PROCEDURE AND CIRCUIT ARRANGEMENT FOR CONTROLLING THE PRIMARY CURRENT IN COIL END SYSTEMS OF MOTOR VEHICLES
JPS57206776A (en) * 1981-06-16 1982-12-18 Nissan Motor Co Ltd Plasma ignition device
DE3231125A1 (en) * 1982-08-21 1984-02-23 Robert Bosch Gmbh, 7000 Stuttgart Ignition system for internal combustion engines
JPS5985483A (en) * 1982-11-04 1984-05-17 Otsupama Kogyo Kk Noncontact igniter for internal-combustion engine
US4480624A (en) * 1983-08-17 1984-11-06 Outboard Marine Corporation Capacitor discharge ignition system for internal combustion engine
JPH0676791B2 (en) * 1986-03-03 1994-09-28 日本電装株式会社 Ignition device for internal combustion engine
JPH0726607B2 (en) * 1987-02-23 1995-03-29 株式会社日立製作所 Electronic distribution ignition device for multi-cylinder internal combustion engine
JPH0299763A (en) * 1988-10-07 1990-04-11 Mitsubishi Electric Corp Ignitor for internal combustion engine
IT1223932B (en) * 1988-11-23 1990-09-29 Marelli Autronica IGNITION SYSTEM FOR AN INTERNAL COMBUSTION ENGINE USING THYRISTORS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO8903937A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6785720B1 (en) 1998-05-23 2004-08-31 Samsung Electronics Co., Ltd. Method for connecting to server devices in browser-based home network apparatus therefor

Also Published As

Publication number Publication date
DE3735631A1 (en) 1989-05-03
DE3881216D1 (en) 1993-06-24
US5050573A (en) 1991-09-24
WO1989003937A1 (en) 1989-05-05
EP0383768B1 (en) 1993-05-19
JPH03500673A (en) 1991-02-14

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