EP0812477A4 - An improved laser ablateable material - Google Patents

An improved laser ablateable material

Info

Publication number
EP0812477A4
EP0812477A4 EP96908627A EP96908627A EP0812477A4 EP 0812477 A4 EP0812477 A4 EP 0812477A4 EP 96908627 A EP96908627 A EP 96908627A EP 96908627 A EP96908627 A EP 96908627A EP 0812477 A4 EP0812477 A4 EP 0812477A4
Authority
EP
European Patent Office
Prior art keywords
improved laser
ablateable
laser ablateable
improved
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP96908627A
Other languages
German (de)
French (fr)
Other versions
EP0812477A1 (en
Inventor
Meir Janai
Yoram Cassuto
Michael Stephen Silverstein
Sharone Zehavi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chip Express Corp
Original Assignee
Chip Express Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chip Express Corp filed Critical Chip Express Corp
Publication of EP0812477A1 publication Critical patent/EP0812477A1/en
Publication of EP0812477A4 publication Critical patent/EP0812477A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
EP96908627A 1995-02-28 1996-02-27 An improved laser ablateable material Withdrawn EP0812477A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IL11282695 1995-02-28
IL11282695A IL112826A (en) 1995-02-28 1995-02-28 Method for depositing a plasma deposited polymer
PCT/US1996/002920 WO1996027212A1 (en) 1995-02-28 1996-02-27 An improved laser ablateable material

Publications (2)

Publication Number Publication Date
EP0812477A1 EP0812477A1 (en) 1997-12-17
EP0812477A4 true EP0812477A4 (en) 1998-10-07

Family

ID=11067145

Family Applications (1)

Application Number Title Priority Date Filing Date
EP96908627A Withdrawn EP0812477A4 (en) 1995-02-28 1996-02-27 An improved laser ablateable material

Country Status (6)

Country Link
EP (1) EP0812477A4 (en)
JP (1) JPH11502060A (en)
KR (1) KR19980702598A (en)
CA (1) CA2214109A1 (en)
IL (1) IL112826A (en)
WO (1) WO1996027212A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
KR102399752B1 (en) * 2013-09-04 2022-05-20 도쿄엘렉트론가부시키가이샤 Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
GB2529620A (en) * 2014-08-18 2016-03-02 Flexenable Ltd Patterning layer stacks for electronic devices
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
CN109716485A (en) 2016-07-15 2019-05-03 布鲁尔科技公司 Laser ablation dielectric material

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371407A (en) * 1980-10-28 1983-02-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for producing semiconductor device
US4374179A (en) * 1980-12-18 1983-02-15 Honeywell Inc. Plasma polymerized ethane for interlayer dielectric
JPS5893241A (en) * 1981-11-30 1983-06-02 Sony Corp Semiconductor device
US4727234A (en) * 1984-06-20 1988-02-23 Gould Inc. Laser-based system for the total repair of photomasks
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5302547A (en) * 1993-02-08 1994-04-12 General Electric Company Systems for patterning dielectrics by laser ablation
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
WO1995006900A1 (en) * 1993-09-03 1995-03-09 Hitachi, Ltd. Method and apparatus for pattern formation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
US5470661A (en) * 1993-01-07 1995-11-28 International Business Machines Corporation Diamond-like carbon films from a hydrocarbon helium plasma

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371407A (en) * 1980-10-28 1983-02-01 Tokyo Shibaura Denki Kabushiki Kaisha Method for producing semiconductor device
US4374179A (en) * 1980-12-18 1983-02-15 Honeywell Inc. Plasma polymerized ethane for interlayer dielectric
JPS5893241A (en) * 1981-11-30 1983-06-02 Sony Corp Semiconductor device
US4727234A (en) * 1984-06-20 1988-02-23 Gould Inc. Laser-based system for the total repair of photomasks
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
US5302547A (en) * 1993-02-08 1994-04-12 General Electric Company Systems for patterning dielectrics by laser ablation
WO1995006900A1 (en) * 1993-09-03 1995-03-09 Hitachi, Ltd. Method and apparatus for pattern formation

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
JANAI M: "Re-engineering ASIC design with LPGAs", PROCEEDINGS EIGHTH ANNUAL IEEE INTERNATIONAL ASIC CONFERENCE AND EXHIBIT (CAT. NO.95TH8087), PROCEEDINGS OF EIGHTH INTERNATIONAL APPLICATION SPECIFIC INTEGRATED CIRCUITS CONFERENCE, AUSTIN, TX, USA, 18-22 SEPT. 1995, ISBN 0-7803-2707-1, 1995, NEW YORK, NY, USA, IEEE, USA, pages 60 - 63, XP002069880 *
MEIR JANAI: "TECHNOLOGIES FOR ECONOMIC PRODUCTION OF ASICS", SOLID STATE TECHNOLOGY, vol. 36, no. 3, 1 March 1993 (1993-03-01), pages 35 - 36, 38, XP000367056 *
MORINAKA A ET AL: "Heat-mode lithography with dye deposited films", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, MAY 1988, USA, vol. 135, no. 5, ISSN 0013-4651, pages 1275 - 1278, XP002060437 *
PATENT ABSTRACTS OF JAPAN vol. 007, no. 190 (E - 194) 19 August 1983 (1983-08-19) *
See also references of WO9627212A1 *

Also Published As

Publication number Publication date
CA2214109A1 (en) 1996-09-06
IL112826A (en) 1998-09-24
JPH11502060A (en) 1999-02-16
IL112826A0 (en) 1995-05-26
KR19980702598A (en) 1998-08-05
WO1996027212A1 (en) 1996-09-06
EP0812477A1 (en) 1997-12-17

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Legal Events

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