EP1497857A1 - Procede de manipulation de couches semiconductrices pour leur amincissement - Google Patents
Procede de manipulation de couches semiconductrices pour leur amincissementInfo
- Publication number
- EP1497857A1 EP1497857A1 EP03727614A EP03727614A EP1497857A1 EP 1497857 A1 EP1497857 A1 EP 1497857A1 EP 03727614 A EP03727614 A EP 03727614A EP 03727614 A EP03727614 A EP 03727614A EP 1497857 A1 EP1497857 A1 EP 1497857A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plate
- bonding
- face
- thin layer
- support handle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Definitions
- ultra-thin components have a number of advantages, the main ones the small footprint and flexible 'use.
- Such electronic components can for example be integrated on plastic or paper supports.
- the first area of application is that of smart cards and electronic labels.
- Ultra-thin electronic components are also increasingly in demand in fields such as encapsulation in order to obtain circuits in ultra-flat housings.
- ultra-thin components are also essential for making vertically integrated circuits or 3D circuits.
- the transfer of an ultra-thin circuit to another circuit thus increases the integration density.
- the applications of these 3D circuits concern the new integrated power systems, radio frequency, optoelectronics and also the field of microprocessors.
- microsystem type in the broad sense EMS for "Micro-Electro-Mechanical Systems” or OEMS for "Micro-Optical-Electro-echanical Systems"
- active layer of microelectronic components is only a thickness of a few ⁇ m (or even less) to a few tens of ⁇ m.
- the interesting part of the component is therefore produced only on the surface of the semiconductor material wafers.
- the thickness of the substrate plays an essential mechanical role during the manufacture of integrated circuits.
- the thickness of the substrate gives it sufficient mechanical strength, allows it to be handled by standard automated equipment and allows the control of its flatness to ensure necessary compatibility with the equipment and high resolution photolithography processes. In other words, production of integrated circuits directly on films of semiconductor material a few ⁇ m thick is not possible.
- Thinning of plates to very thin thicknesses is today extremely difficult and poses yield problems. For such small thicknesses, the plate becomes flexible and often breaks during the thinning operation before the stresses are relaxed.
- a support handle glues the wafer to an intermediate support, known as a support handle, in order to be able to maintain and handle the thinned wafer without breaking it.
- This support handle allows the thinning of the plate containing the components to a very small thickness. After thinning, the thin layer obtained and which is integral with the support handle can be manipulated and transferred to another support which may be the final support.
- the first problem is that the solvent is not always compatible with the final support, for example if the final support is. a plastic smart card.
- the second problem is that there is glue residue which is sometimes difficult to remove.
- One method which has a great advantage is the method of joining by molecular adhesion ("direct wafer bonding" in English). This technique is used in many fields to obtain certain substrates, for example SOI substrates. We can cite the now well-known example of the process.
- the method of bonding by molecular adhesion is also used in fields other than microelectronics, for example for the manufacture of microsensors or M ⁇ MS.
- certain devices are produced from a joining by molecular adhesion of plates having a local recess or cavities.
- T. GESSNER et al. Proc. of second Internat. Symp. on microstructures and microfabricated Systems (Ele ⁇ . Soc. Inc. Pennington, NJ, USA, 1995), pages 297-308 (Chicago, IL, USA, October 8-13, 1995).
- the surfaces to be joined are prepared in such a way that the bonding forces are very high.
- the prior art teaches how to thin a plate by sticking it to a holding handle by different means.
- the prior art does not include any method for reversibly bonding a plate, comprising components and having a relief which must be partly preserved, on an intermediate support serving as a handle, this bonding making it possible to thin the plate. and manipulate the thinned plate on its handle.
- the invention overcomes the problem set out above.
- It relates to a process for obtaining a thin layer from a plate comprising a front face divided into surface elements and having a given relief and a rear face, comprising the steps consisting in: a) obtaining a support handle having a face serving as a bonding face; b) preparing the front face of the plate, this preparation comprising an incomplete planarization of the front face of the plate, in order to obtain, with respect to the bonding face of the support handle, a bonding energy E 0 of between a first value , corresponding to the minimum bonding energy compatible with the posterior thinning step, and a second value, corresponding to the maximum bonding energy compatible with the posterior decoupling operation, the bonding energy E 0 being such that E 0 ⁇ OC-E, E being the bonding energy which would be obtained if the front face of the plate were completely planarized, 06 being the ratio between the planarized surface incompletely of the front face of the plate and the surface of the front face of the plate if it were planarized completely;
- step e all of the surface elements are transferred to the support for use.
- step e) the transfer of the surface elements being carried out individually, step b) is carried out so as to obtain for each surface element a bonding energy E 0 , l step e) being preceded by a step of cutting the thin layer into surface elements.
- step e) the transfer of the surface elements being done by group of surface elements, step b) is carried out so as to obtain for each group of surface elements a bonding energy E 0 , step e) being preceded by a step of cutting the thin layer into a group of surface elements.
- the cutting of the thin layer can be accompanied by the cutting of the support handle.
- the cutting step can be carried out by combining a deep etching step of the thin layer and a sawing step.
- the part of the. plate intended to provide the thin layer may in particular comprise semiconductor material.
- the surface elements may constitute electronic components, complete or not;
- step b) the incomplete planarization can be carried out by a chemical mechanical polishing method.
- step d) the thinning of the plate can be carried out by a mechanical, chemical or mechanical-chemical thinning method.
- step e) the separation from the support handle can be achieved in particular by mechanical and / or pneumatic means.
- step e the transfer takes place before the separation from the support handle.
- FIG. 1 is a cross-sectional view of a support handle intended for implementing the method according to the invention
- FIG. 2 is a cross-sectional view of a plate intended to provide a thin layer by means of the method according to the invention
- Figure 1 shows, in cross section, a support handle 10 for example consisting of a silicon or glass plate. Glass has the advantage of being transparent, which makes it possible to visually check the objects deposited on the rear face.
- the support handle 10 has a face 11 prepared to serve as a bonding face.
- Figure 2 shows, in cross section, a plate 20 of semiconductor material, for example silicon.
- One of its main faces has undergone treatments intended to produce electronic components.
- - Figure 2 which is a partial view, shows three components 21 completed or not. The presence of these components means that the treated flat face has significant relief with several zones of different heights and different roughness. When the plate includes completed components, a part of this relief corresponds to the presence of openings making it possible to resume electrical contacts.
- the chemical nature of the plates to be bonded by molecular adhesion, the chemical cleanings before bonding and the heat treatment to consolidate the bonding are fixed in such a way that a bonding energy E is obtained if the plate comprising the components is totally planarized.
- a surface is completely planarized if its roughness is less than approximately 0.5 nm on any element of 100 ⁇ m 2 of this surface (AFM measurement).
- Ei is the minimum bonding energy which is compatible with thinning.
- E 2 is the maximum bonding energy below which the joining of the bonded parts is reversible.
- the coefficient ⁇ is advantageously between 0.4 and 0.8. This coefficient is the ratio between the planarized surface and the total surface of the plate. In practice, the planarized surface is equal to the sum of the planarized surface elements.
- planarized surface element any connected part of the surface where the roughness measured in AFM is less than approximately 0.5 n on any element of 100 ⁇ m 2 .
- the total thickness of the glued parts is not changed and thinning can be carried out with great precision. This precision then depends on the equipment used. If mechanical thinning is achieved, an accuracy of + or - l ⁇ m can be obtained.
- FIGS. 3A to 3D illustrate different stages of the method according to the invention.
- FIG. 3A shows the plate 20 after the planarization operation carried out until reaching level 22.
- the planarization is preferably carried out by chemical mechanical polishing (CMP), so as to clip the tops of the relief sufficiently to obtain a molecular adhesion but without totally planarizing the plate contrary to the usual practice.
- Relief remains on the plate on several levels. Only two levels are shown in Figure 3A, but more than two levels may exist.
- the bonding energy Ei corresponds to the minimum bonding energy which allows thinning. This minimum energy is of course a function of the thinning method which can be mechanical, chemical, mechanical-chemical or other. For example, Ei is worth 500 mJ / m 2 for thinning by chemical-mechanical grinding and polishing.
- FIG. 3B shows the structure obtained when the plate 20 is secured by molecular adhesion, on the component side, with the support handle 10.
- the bonding energy E depends on the temperature at which the structure has been optionally annealed, the nature of the materials which are brought into contact (Si 3 N 4 , Si0 2 , Si ...) and the chemical cleaning which is carried out before contacting.
- the thermal and chemical treatments are, in all cases, chosen so as not to degrade the structure and in particular the components present. For example, for a hydrophilic bonding of two totally planarized Si0 - Si0 2 surfaces, an energy of 1 J / m 2 is obtained after annealing at 300 ° C for two hours.
- the bonding energy E 2 is the maximum bonding energy below which the joining is reversible. It obviously depends on the method which is used to separate the two plates at the bonding interface after thinning. For example, if a blade is used to separate the two pieces of . the structure, E 2 is worth approximately 800 ' mJ / m 2 (the bonding energies are measured by the blade method).
- the plate 20, glued to the support handle 10, is thinned by its rear face to provide a thin layer 23. This is shown in FIG. 3C.
- This thinning can be mechanical: polishing or rectification ("grinding" in English). It can be chemical: by etching using a solution that attacks the material to be thinned. It can also be mechanical-chemical: by mechanical-chemical polishing.
- a barrier layer may also be present in the initial substrate (for example a buried oxide layer in the case of an SOI substrate). In this case, the thinning is carried out up to this stop layer. After thinning, the thin layer secured to the support handle can be handled. The components of the thin layer can then be transferred collectively to another support of the same diameter. They can also be carried over individually.
- FIG. 3C the cutting axes 24 of the components 21 have been indicated.
- FIG. 3D the components and their cut support have been shown. These cut components can be handled with conventional tools because. --thinned components are on their handling support.
- Figure 3D shows a component 21 and the part of the support handle 10 which corresponds to it, during manipulation.
- FIG. 3E represents a component 21 transferred onto its final support 25, the component 21 still being integral with its support handle part 10.
- FIG. 3F represents the component 21 fixed on its final support 25 and separated from its support handle part 10
- the separation can be carried out by any mechanical or pneumatic means used alone or in combination. Include separation by inserting a tool (blade Teflon ®, metal), by injecting a gas stream, by exerting a tensile force and / or shearing.
- a variant of the process consists in cutting out only the thin layer containing the elements to be transferred or only this layer and part of the handle. The removal of the element to be transferred is then simultaneous with the separation between the element and the support handle.
- a manipulator for example a vacuum micropipette is used to transfer the element.
- the component can be separated from the support handle during the transfer. This is the case when a needle is used through a perforated support handle.
- the invention applies to the thinning of any type of semiconductor, for example silicon, germanium, III-V semiconductors (AsGa, InP,
- GaN GaN
- the plate is * planarized in an incomplete way so as to clip the vertices of the relief and obtain plates whose surface is approximately 2 mm 2 and whose roughness on this surface is less than 0.5 nm.
- This surface is for example made of silicon oxide or silicon nitride.
- the planarized surface represents 60% of the total surface.
- the planarization is carried out by CMP and, after chemical cleaning, the plate is brought into contact with its support handle which can be a silicon plate oxidized on the surface or a glass plate with possibly a deposit of silicon oxide on the surface. Annealing at 250 ° C. for two hours is carried out for this plate in order to obtain a bonding energy of the order of 600 mJ / m 2 .
- the rear face of the plate containing the integrated circuits is thinned to a thickness of 10 ⁇ m, for example by grinding followed by chemical mechanical polishing.
- the circuits are then cut on their support handle using a standard saw.
- a variant consists in carrying out a deep etching of the thin layer carrying the components in a pattern such that it facilitates sawing, for example an etching of the entire thin layer over a length greater than the saw cut. The whole is handled with standard "pick and place” tools.
- a circuit can then be transferred, for example, to a smart card by gluing the rear face of the circuit to the final support with an adhesive.
- the rear face of the circuit is bonded by molecular adhesion to a wafer containing other circuits in order to produce 3D circuits.
- the joining of the rear face of the circuit can be done with a bonding energy for example of 1.5 J / m 2 . Such energy can be obtained by plasma cleaning.
- the intermediate support can be removed by introducing a blade at the bonding interface. A small recess may have been provided at the interface to facilitate the introduction of the blade.
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0203909A FR2837981B1 (fr) | 2002-03-28 | 2002-03-28 | Procede de manipulation de couches semiconductrices pour leur amincissement |
FR0203909 | 2002-03-28 | ||
PCT/FR2003/000954 WO2003083930A1 (fr) | 2002-03-28 | 2003-03-26 | Procede de manipulation de couches semiconductrices pour leur amincissement |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1497857A1 true EP1497857A1 (fr) | 2005-01-19 |
EP1497857B1 EP1497857B1 (fr) | 2010-05-19 |
Family
ID=27839282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03727614A Expired - Lifetime EP1497857B1 (fr) | 2002-03-28 | 2003-03-26 | Procede de manipulation de couches semiconductrices pour leur amincissement |
Country Status (7)
Country | Link |
---|---|
US (1) | US7205211B2 (fr) |
EP (1) | EP1497857B1 (fr) |
JP (1) | JP4593116B2 (fr) |
AT (1) | ATE468605T1 (fr) |
DE (1) | DE60332613D1 (fr) |
FR (1) | FR2837981B1 (fr) |
WO (1) | WO2003083930A1 (fr) |
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FR2857502B1 (fr) | 2003-07-10 | 2006-02-24 | Soitec Silicon On Insulator | Substrats pour systemes contraints |
FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
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US20070029043A1 (en) * | 2005-08-08 | 2007-02-08 | Silicon Genesis Corporation | Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer process |
US7166520B1 (en) | 2005-08-08 | 2007-01-23 | Silicon Genesis Corporation | Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process |
US20070032044A1 (en) * | 2005-08-08 | 2007-02-08 | Silicon Genesis Corporation | Method and structure for fabricating devices using one or more films provided by a layer transfer process and etch back |
DE102005048153B4 (de) * | 2005-10-06 | 2010-08-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauteils mit Halbleiterchip und Klebstofffolie |
FR2899594A1 (fr) | 2006-04-10 | 2007-10-12 | Commissariat Energie Atomique | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
US8124499B2 (en) * | 2006-11-06 | 2012-02-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
US20080128641A1 (en) * | 2006-11-08 | 2008-06-05 | Silicon Genesis Corporation | Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials |
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FR2919959B1 (fr) * | 2007-08-07 | 2009-12-18 | Commissariat Energie Atomique | Procede de transfert a basse temperature a partir d'une couche de molecules auto-assemblees |
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FR2936357B1 (fr) * | 2008-09-24 | 2010-12-10 | Commissariat Energie Atomique | Procede de report de puces sur un substrat. |
FR2938117B1 (fr) * | 2008-10-31 | 2011-04-15 | Commissariat Energie Atomique | Procede d'elaboration d'un substrat hybride ayant une couche continue electriquement isolante enterree |
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FR2953065A1 (fr) * | 2009-11-20 | 2011-05-27 | Commissariat Energie Atomique | Procede de realisation d'empilements sur plusieurs niveaux d'ensembles de puces electroniques |
US8481406B2 (en) | 2010-07-15 | 2013-07-09 | Soitec | Methods of forming bonded semiconductor structures |
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FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
US6303469B1 (en) * | 2000-06-07 | 2001-10-16 | Micron Technology, Inc. | Thin microelectronic substrates and methods of manufacture |
FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
US7407869B2 (en) * | 2000-11-27 | 2008-08-05 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material |
US6989314B2 (en) * | 2003-02-12 | 2006-01-24 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Semiconductor structure and method of making same |
JP2004319538A (ja) * | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
FR2867310B1 (fr) * | 2004-03-05 | 2006-05-26 | Soitec Silicon On Insulator | Technique d'amelioration de la qualite d'une couche mince prelevee |
US20060014363A1 (en) * | 2004-03-05 | 2006-01-19 | Nicolas Daval | Thermal treatment of a semiconductor layer |
JP2008513990A (ja) * | 2004-09-21 | 2008-05-01 | エス.オー.アイ.テック シリコン オン インシュレータ テクノロジーズ | 共注入および続いて注入を行うことにより薄層を得るための方法 |
-
2002
- 2002-03-28 FR FR0203909A patent/FR2837981B1/fr not_active Expired - Fee Related
-
2003
- 2003-03-26 EP EP03727614A patent/EP1497857B1/fr not_active Expired - Lifetime
- 2003-03-26 JP JP2003581250A patent/JP4593116B2/ja not_active Expired - Lifetime
- 2003-03-26 DE DE60332613T patent/DE60332613D1/de not_active Expired - Lifetime
- 2003-03-26 WO PCT/FR2003/000954 patent/WO2003083930A1/fr active Application Filing
- 2003-03-26 US US10/509,007 patent/US7205211B2/en not_active Expired - Lifetime
- 2003-03-26 AT AT03727614T patent/ATE468605T1/de not_active IP Right Cessation
Non-Patent Citations (1)
Title |
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See references of WO03083930A1 * |
Also Published As
Publication number | Publication date |
---|---|
FR2837981A1 (fr) | 2003-10-03 |
JP2005528779A (ja) | 2005-09-22 |
DE60332613D1 (de) | 2010-07-01 |
EP1497857B1 (fr) | 2010-05-19 |
US20050124138A1 (en) | 2005-06-09 |
FR2837981B1 (fr) | 2005-01-07 |
ATE468605T1 (de) | 2010-06-15 |
JP4593116B2 (ja) | 2010-12-08 |
US7205211B2 (en) | 2007-04-17 |
WO2003083930A1 (fr) | 2003-10-09 |
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