EP2160735A4 - Intelligent control of program pulse duration - Google Patents

Intelligent control of program pulse duration

Info

Publication number
EP2160735A4
EP2160735A4 EP08771368A EP08771368A EP2160735A4 EP 2160735 A4 EP2160735 A4 EP 2160735A4 EP 08771368 A EP08771368 A EP 08771368A EP 08771368 A EP08771368 A EP 08771368A EP 2160735 A4 EP2160735 A4 EP 2160735A4
Authority
EP
European Patent Office
Prior art keywords
intelligent control
pulse duration
program pulse
program
duration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08771368A
Other languages
German (de)
French (fr)
Other versions
EP2160735A1 (en
Inventor
Yupin Fong
Jun Wan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/766,583 external-priority patent/US7630249B2/en
Priority claimed from US11/766,580 external-priority patent/US7580290B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of EP2160735A1 publication Critical patent/EP2160735A1/en
Publication of EP2160735A4 publication Critical patent/EP2160735A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
EP08771368A 2007-06-21 2008-06-18 Intelligent control of program pulse duration Withdrawn EP2160735A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/766,583 US7630249B2 (en) 2007-06-21 2007-06-21 Intelligent control of program pulse duration
US11/766,580 US7580290B2 (en) 2007-06-21 2007-06-21 Non-volatile storage system with intelligent control of program pulse duration
PCT/US2008/067347 WO2008157606A1 (en) 2007-06-21 2008-06-18 Intelligent control of program pulse duration

Publications (2)

Publication Number Publication Date
EP2160735A1 EP2160735A1 (en) 2010-03-10
EP2160735A4 true EP2160735A4 (en) 2011-04-20

Family

ID=40156678

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08771368A Withdrawn EP2160735A4 (en) 2007-06-21 2008-06-18 Intelligent control of program pulse duration

Country Status (6)

Country Link
EP (1) EP2160735A4 (en)
JP (1) JP2010530596A (en)
KR (1) KR20100050471A (en)
CN (1) CN101779250B (en)
TW (1) TWI378457B (en)
WO (1) WO2008157606A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101635504B1 (en) 2009-06-19 2016-07-04 삼성전자주식회사 Program method of non-volatile memory device with three-dimentional vertical channel structure
US8432740B2 (en) * 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
JP2013041654A (en) * 2011-08-19 2013-02-28 Toshiba Corp Nonvolatile storage device
KR101989792B1 (en) 2012-11-01 2019-06-17 삼성전자주식회사 Memory system including nonvolatile memory and method for operating nonvolatile memory
WO2015056683A1 (en) * 2013-10-16 2015-04-23 富士フイルム株式会社 Nitrogen-containing heterocyclic compound salt or crystal thereof, pharmaceutical composition, and flt3 inhibitor
JP2017168156A (en) * 2016-03-14 2017-09-21 東芝メモリ株式会社 Semiconductor storage device
TWI604449B (en) * 2016-08-31 2017-11-01 旺宏電子股份有限公司 Memory device and programming method thereof
JP6503395B2 (en) * 2016-10-12 2019-04-17 イーメモリー テクノロジー インコーポレイテッド Electrostatic discharge circuit
CN110189783B (en) * 2019-04-15 2021-04-06 华中科技大学 Multi-value programming method and system of nonvolatile three-dimensional semiconductor memory device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621404A (en) * 1992-07-06 1994-01-28 Toshiba Corp Nonvolatile semiconductor storage device
JPH08329694A (en) * 1995-03-29 1996-12-13 Toshiba Corp Non-volatile semiconductor storage device
US5751637A (en) * 1995-06-07 1998-05-12 Macronix International Co., Ltd. Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
US20050057969A1 (en) * 2003-09-12 2005-03-17 Renesas Technology Corp. Nonvolatile semiconductor memory device
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US20050105373A1 (en) * 2002-02-28 2005-05-19 Yoshinori Takase Nonvolatile semiconductor memory device
WO2005057585A2 (en) * 2003-12-05 2005-06-23 Sandisk 3D Llc Nand memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027491A (en) * 1996-07-12 1998-01-27 Denso Corp Method for measuring writing threshold value of nonvolatile memory
KR100525910B1 (en) * 2003-03-31 2005-11-02 주식회사 하이닉스반도체 Method of programming a flash memory cell and method of programing an NAND flash memory using the same
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
KR100626377B1 (en) * 2004-06-07 2006-09-20 삼성전자주식회사 Non-volatile memory device capable of changing increment of program voltage according to mode of operation
KR100705220B1 (en) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 Erasing and Programming methods of a flash memory device for increasing program speed of the flash memory device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621404A (en) * 1992-07-06 1994-01-28 Toshiba Corp Nonvolatile semiconductor storage device
JPH08329694A (en) * 1995-03-29 1996-12-13 Toshiba Corp Non-volatile semiconductor storage device
US5751637A (en) * 1995-06-07 1998-05-12 Macronix International Co., Ltd. Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
US20050105373A1 (en) * 2002-02-28 2005-05-19 Yoshinori Takase Nonvolatile semiconductor memory device
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
US20050057969A1 (en) * 2003-09-12 2005-03-17 Renesas Technology Corp. Nonvolatile semiconductor memory device
WO2005057585A2 (en) * 2003-12-05 2005-06-23 Sandisk 3D Llc Nand memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KAWAHARA T ET AL: "HIGH RELIABILITY ELECTRON-EJECTION METHOD FOR HIGH DENSITY FLASH MEMORIES", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 30, no. 12, 1 December 1995 (1995-12-01), pages 1554 - 1561, XP000557264, ISSN: 0018-9200, DOI: 10.1109/4.482206 *
NAOKI MIYAMOTO ET AL: "HIGH-RELIABILITY PROGRAMMING METHOD SUITABLE FOR FLASH MEMORIES OF MORE THAN 256 MB", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLIDSTATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, 21 August 1995 (1995-08-21), pages 67 - 69, XP000544566 *
See also references of WO2008157606A1 *

Also Published As

Publication number Publication date
EP2160735A1 (en) 2010-03-10
CN101779250B (en) 2014-01-08
KR20100050471A (en) 2010-05-13
JP2010530596A (en) 2010-09-09
CN101779250A (en) 2010-07-14
TW200907976A (en) 2009-02-16
WO2008157606A1 (en) 2008-12-24
TWI378457B (en) 2012-12-01

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