EP2612380A4 - Light emitting, power generating or other electronic apparatus and method of manufacturing same - Google Patents

Light emitting, power generating or other electronic apparatus and method of manufacturing same

Info

Publication number
EP2612380A4
EP2612380A4 EP11822653.9A EP11822653A EP2612380A4 EP 2612380 A4 EP2612380 A4 EP 2612380A4 EP 11822653 A EP11822653 A EP 11822653A EP 2612380 A4 EP2612380 A4 EP 2612380A4
Authority
EP
European Patent Office
Prior art keywords
light emitting
electronic apparatus
power generating
manufacturing same
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11822653.9A
Other languages
German (de)
French (fr)
Other versions
EP2612380A2 (en
Inventor
Mark D Lowenthal
William Johnstone Ray
Neil O Shotton
Richard A Blanchard
Brad Oraw
Mark Allan Lewandowski
Jeffrey Baldridge
Eric Anthony Perozziello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NthDegree Technologies Worldwide Inc
Original Assignee
NthDegree Technologies Worldwide Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/223,293 external-priority patent/US8877101B2/en
Priority claimed from US13/223,279 external-priority patent/US8809126B2/en
Priority claimed from US13/223,289 external-priority patent/US9018833B2/en
Priority claimed from US13/223,294 external-priority patent/US8674593B2/en
Priority claimed from US13/223,302 external-priority patent/US8846457B2/en
Priority claimed from US13/223,297 external-priority patent/US8415879B2/en
Priority claimed from US13/223,286 external-priority patent/US8852467B2/en
Application filed by NthDegree Technologies Worldwide Inc filed Critical NthDegree Technologies Worldwide Inc
Publication of EP2612380A2 publication Critical patent/EP2612380A2/en
Publication of EP2612380A4 publication Critical patent/EP2612380A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
    • H01L2224/95101—Supplying the plurality of semiconductor or solid-state bodies in a liquid medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
EP11822653.9A 2010-09-01 2011-09-01 Light emitting, power generating or other electronic apparatus and method of manufacturing same Withdrawn EP2612380A4 (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US37928410P 2010-09-01 2010-09-01
US37922510P 2010-09-01 2010-09-01
US37983010P 2010-09-03 2010-09-03
US37982010P 2010-09-03 2010-09-03
US13/223,293 US8877101B2 (en) 2007-05-31 2011-08-31 Method of manufacturing a light emitting, power generating or other electronic apparatus
US13/223,279 US8809126B2 (en) 2007-05-31 2011-08-31 Printable composition of a liquid or gel suspension of diodes
US13/223,289 US9018833B2 (en) 2007-05-31 2011-08-31 Apparatus with light emitting or absorbing diodes
US13/223,294 US8674593B2 (en) 2007-05-31 2011-08-31 Diode for a printable composition
US13/223,302 US8846457B2 (en) 2007-05-31 2011-08-31 Printable composition of a liquid or gel suspension of diodes
US13/223,297 US8415879B2 (en) 2007-05-31 2011-08-31 Diode for a printable composition
US13/223,286 US8852467B2 (en) 2007-05-31 2011-08-31 Method of manufacturing a printable composition of a liquid or gel suspension of diodes
PCT/US2011/050174 WO2012031096A2 (en) 2010-09-01 2011-09-01 Light emitting, power generating or other electronic apparatus and method of manufacturing same

Publications (2)

Publication Number Publication Date
EP2612380A2 EP2612380A2 (en) 2013-07-10
EP2612380A4 true EP2612380A4 (en) 2015-01-14

Family

ID=48607508

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11822653.9A Withdrawn EP2612380A4 (en) 2010-09-01 2011-09-01 Light emitting, power generating or other electronic apparatus and method of manufacturing same

Country Status (4)

Country Link
EP (1) EP2612380A4 (en)
KR (4) KR102030331B1 (en)
CN (1) CN103582962B (en)
WO (1) WO2012031096A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2954361B1 (en) 2009-12-23 2012-06-15 Arjo Wiggins Fine Papers Ltd ULTRA SMOOTH AND RECYCLABLE PRINTING SHEET AND METHOD OF MANUFACTURING THE SAME
US9648751B2 (en) 2012-01-13 2017-05-09 Arjo Wiggins Fine Papers Limited Method for producing a sheet
DE102015215599A1 (en) * 2015-08-14 2017-02-16 Audi Ag Energy storage arrangement, in particular for a motor vehicle, motor vehicle and method for producing an energy storage device
CN111261653B (en) * 2018-11-30 2023-08-01 成都辰显光电有限公司 Micro light emitting diode, display panel and transfer method thereof
CN111739789A (en) * 2020-06-30 2020-10-02 安徽安美半导体有限公司 Reworking and cleaning process of diode

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US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
EP0747948A2 (en) * 1995-06-07 1996-12-11 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
US20060278886A1 (en) * 2005-06-10 2006-12-14 Sony Corporation Light emitting diode, method of manufacturing light emitting diode, light emitting diode backlight, light emitting diode illuminating device, light emitting diode display, and electronic apparatus
WO2007149362A2 (en) * 2006-06-16 2007-12-27 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
US20080224153A1 (en) * 2006-12-04 2008-09-18 Sony Corporation Electronic device, method of producing the same, light-emitting diode display unit, and method of producing the same
EP2048704A1 (en) * 2006-07-12 2009-04-15 Sony Corporation Mounting method, mounting structure, method for manufacturing electronic equipment, electronic equipment, method for manufacturing light emitting diode display, and light emitting diode display
US20090230174A1 (en) * 2008-01-22 2009-09-17 Washington, University Of Self-assembly of elements using microfluidic traps

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US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
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US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
EP0747948A2 (en) * 1995-06-07 1996-12-11 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
WO2000045443A1 (en) * 1999-01-28 2000-08-03 Nova Crystals, Inc. High performance light emitting diodes
US20060278886A1 (en) * 2005-06-10 2006-12-14 Sony Corporation Light emitting diode, method of manufacturing light emitting diode, light emitting diode backlight, light emitting diode illuminating device, light emitting diode display, and electronic apparatus
WO2007149362A2 (en) * 2006-06-16 2007-12-27 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
EP2048704A1 (en) * 2006-07-12 2009-04-15 Sony Corporation Mounting method, mounting structure, method for manufacturing electronic equipment, electronic equipment, method for manufacturing light emitting diode display, and light emitting diode display
US20080224153A1 (en) * 2006-12-04 2008-09-18 Sony Corporation Electronic device, method of producing the same, light-emitting diode display unit, and method of producing the same
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HWANG ET AL: "Optical and electrical properties of GaN micron-scale light-emitting diode", JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, PERGAMON PRESS, LONDON, GB, vol. 69, no. 2-3, 1 February 2008 (2008-02-01), pages 752 - 758, XP022456345, ISSN: 0022-3697, DOI: 10.1016/J.JPCS.2007.07.111 *
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Also Published As

Publication number Publication date
CN103582962A (en) 2014-02-12
KR20210136146A (en) 2021-11-16
KR20190116535A (en) 2019-10-14
KR102321916B1 (en) 2021-11-05
WO2012031096A2 (en) 2012-03-08
EP2612380A2 (en) 2013-07-10
KR102404843B1 (en) 2022-06-07
KR102156532B1 (en) 2020-09-16
WO2012031096A3 (en) 2014-03-20
KR20130108575A (en) 2013-10-04
CN103582962B (en) 2017-03-22
KR102030331B1 (en) 2019-10-10
KR20200106995A (en) 2020-09-15

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