US20010010444A1 - Method of producing a surface acoustic wave component - Google Patents

Method of producing a surface acoustic wave component Download PDF

Info

Publication number
US20010010444A1
US20010010444A1 US09/795,099 US79509901A US2001010444A1 US 20010010444 A1 US20010010444 A1 US 20010010444A1 US 79509901 A US79509901 A US 79509901A US 2001010444 A1 US2001010444 A1 US 2001010444A1
Authority
US
United States
Prior art keywords
component
substrate
surface acoustic
layer
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/795,099
Other versions
US6449828B2 (en
Inventor
Wolfgang Pahl
Alois Stelzl
Hans Kruger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Siemens Matsushita Components GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19548062A external-priority patent/DE19548062A1/en
Application filed by Siemens Matsushita Components GmbH and Co KG filed Critical Siemens Matsushita Components GmbH and Co KG
Priority to US09/795,099 priority Critical patent/US6449828B2/en
Publication of US20010010444A1 publication Critical patent/US20010010444A1/en
Application granted granted Critical
Publication of US6449828B2 publication Critical patent/US6449828B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02913Measures for shielding against electromagnetic fields
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/0538Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/002Casings with localised screening
    • H05K9/0039Galvanic coupling of ground layer on printed circuit board [PCB] to conductive casing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49016Antenna or wave energy "plumbing" making

Definitions

  • the present invention relates to a method of producing a surface acoustic wave component.
  • Electrically conductive structures are disposed on a substrate and encapsulated, i.e., sealed against environmental influences, by a cap cover.
  • the SAW component is provided with a cover metallization which acts as an RF shield.
  • An earlier, commonly owned application No. 08/743,540 (see international published application WO 95/30276) describes an encapsulation for electronic components with a cap that seals component structures on a substrate.
  • the cap is formed by a cover which is provided on the substrate and has cutouts accommodating the component structures in regions thereof.
  • Such an encapsulation protects the component structures against environmental influences, with the result that electronic components encapsulated in such a way can be used directly in further applications, without the need for an additional housing.
  • German published non-prosecuted patent application DE 31 38 743 A1 discloses a SAW filter enclosed in a metallic casing and sealed on all sides which avoids the above disadvantages.
  • an electrical component in particular a SAW component operating with surface acoustic waves, comprising:
  • a substrate electrically conductive structures disposed on the substrate, and a cap cover encapsulating and sealing the electrically conductive structures against environmental influences;
  • an RF shielding metallization disposed on the cap cover, the metallization being a layer sequence formed with a layer of titanium/tungsten, a layer of a metal selected from the group consisting of copper and nickel, and a layer of gold.
  • the layer of titanium/tungsten and the copper layer have a layer thickness of less than 0.1 ⁇ m
  • the layer of nickel has a layer thickness of approximately 1 ⁇ m
  • the layer of gold has a layer thickness of about 0.05 ⁇ m.
  • the conductive structures include a ground connecting pad for electrically connecting the conductive structures
  • the cap cover has a window formed therein, and the metallization is electrically connected to the pad via a through-plated hole through the window in the cap cover.
  • a method of producing a surface acoustic wave component which comprises:
  • the metallization is formed by vapor depositing the layer sequence of TiW, Cu or Ni and Au, structuring the metal layer by pulsed laser radiation, and non-electrically reinforcing the vapor deposited layer with Cu.
  • FIG. 1 is a partial schematic side elevation of a SAW component with shielding according to the invention
  • FIG. 2 is a partial schematic plan view of the component according to FIG. 1;
  • FIG. 3 is a similar view of a SAW component suitable for SMD mounting and provided with an RF shield according to the invention.
  • FIG. 4 is a partial schematic side elevation of a SAW component which is suitable for flip-chip mounting and has RF shielding according to the invention.
  • a surface acoustic wave (SAW) component which, in principle, comprises a piezoelectric substrate 1 and conductive structures 3 disposed on the substrate.
  • conductive structures 3 which may be, for example, the electrode fingers of interdigital transducers, resonators or reflectors.
  • the electrically conductive structures 3 are covered by a cap 2 which protects the structures against environmental influences.
  • the component, together with the cover 2 and the substrate 1 may be directly used as a “casing”, or it can be fitted into a casing.
  • a metallization 6 which is used for RF shielding is provided on the cap 2 .
  • the metallization 6 is formed by a material layer sequence of TiW, Cu or Ni and Au and is conductively connected to a pad 4 (the connecting surface 4 of the component structures 3 ) via a through-plated hole 5 which passes through a window 7 in the cap 2 .
  • the metallization 6 which is used for RF shielding can be connected to ground via the pad 4 .
  • FIG. 2 shows as a detail a part of the component according to FIG. 1 with the pad 4 and the through-plated hole 5 , as well as the metallization 6 which covers the surface.
  • FIG. 3 shows a plan view of one embodiment of an RF shielded component which is suitable for SMD mounting.
  • a solderable metallization 8 is provided on the surface of the cap 2 according to FIG. 1 and is conductively connected to a pad 4 via the through-plated hole 5 .
  • the multilayer metallization 6 which is used for RF shielding is thereby electrically insulated from the solderable metallization 8 .
  • FIG. 4 shows a schematic illustration of an RF-shielded embodiment of a SAW component that is suitable for flip-chip mounting.
  • a bump 9 is provided in the window 7 and is soldered on the substrate surface to a pad, which is not illustrated per se.
  • the component can be mounted in an electrical circuit via such bumps 9 . Additional information in this regard may be gleaned from our published international application WO 97/23950 (and copending, concurrently filed application No. (atty. docket number GR 95 P 2262 P)), which is herewith incorporated by reference.
  • the titanium and tungsten layer ensures the adhesion capability on the cover 2
  • the nickel layer ensures the soldering capability
  • the gold layer ensures oxidation protection.
  • the layer thicknesses of titanium/tungsten are preferably less than 0.1 ⁇ m, that of nickel is about 1 ⁇ m and that of gold is about 0.1 or 0.05 ⁇ m.
  • the metallization 6 can be produced in such a manner that a thin metallic layer is initially vapor-deposited onto the cover 2 and is then galvanically reinforced.
  • a particularly cost-effective variant comprises vapor-deposition of a layer sequence of TiW, Cu or Ni and Au, whose overall thickness is less than 10 ⁇ m, preferably being equal to 0.3 ⁇ m.
  • the layer is structured by pulsed laser radiation and current-less reinforcement with Cu.
  • the through-plated hole 5 is also produced at the same time.
  • Au can be deposited with a thickness of 0.05 ⁇ m for passivation.
  • the through-plated holes 5 are produced on a substrate wafer which contains a multiplicity of components, they can also be positioned such that some of the through-plated hole is in each case associated with a component system, that is to say one through-plated hole is sufficient for two component systems.
  • the reliability can likewise be improved by providing redundant through-plated holes, that is to say by allocating two through-plated holes to one pad.

Abstract

The SAW component has electrically conductive structures on a substrate. A cap cover encapsulates and seals the structures against environmental influences. An RF shield is placed on the cap cover. The RF shield is a metallization formed of a material layer sequence of TiW, Cu or Ni and Au which may be reinforced with current-less or galvanic deposition.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • This is a division of U.S. application Ser. No. 09/103,166, filed Jun. 22, 1998, which was a continuation of copending international application PCT/DE96/02408, filed Dec. 16, 1996, which designated the United States. [0001]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • The present invention relates to a method of producing a surface acoustic wave component. Electrically conductive structures are disposed on a substrate and encapsulated, i.e., sealed against environmental influences, by a cap cover. The SAW component is provided with a cover metallization which acts as an RF shield. [0003]
  • An earlier, commonly owned application No. 08/743,540 (see international published application WO 95/30276) describes an encapsulation for electronic components with a cap that seals component structures on a substrate. The cap is formed by a cover which is provided on the substrate and has cutouts accommodating the component structures in regions thereof. Such an encapsulation protects the component structures against environmental influences, with the result that electronic components encapsulated in such a way can be used directly in further applications, without the need for an additional housing. [0004]
  • When such components are fitted in a ceramic casing and the casing is sealed with glass solder for cost reasons, then the component is not effectively RF shielded since the cover is then composed of ceramic and there is no conductive connection to the cover. When the casing is formed of plastic material, then an analogous situation results. [0005]
  • German published non-prosecuted patent application DE 31 38 743 A1 discloses a SAW filter enclosed in a metallic casing and sealed on all sides which avoids the above disadvantages. [0006]
  • SUMMARY OF THE INVENTION
  • It is accordingly an object of the invention to provide a method of producing a surface acoustic wave component, which overcomes the above-mentioned disadvantages of the prior art devices and methods of this general type and which provides for an effective RF shield for electronic components of this type. [0007]
  • With the foregoing and other objects in view there is provided, in accordance with the invention, an electrical component, in particular a SAW component operating with surface acoustic waves, comprising: [0008]
  • a substrate, electrically conductive structures disposed on the substrate, and a cap cover encapsulating and sealing the electrically conductive structures against environmental influences; and [0009]
  • an RF shielding metallization disposed on the cap cover, the metallization being a layer sequence formed with a layer of titanium/tungsten, a layer of a metal selected from the group consisting of copper and nickel, and a layer of gold. [0010]
  • In accordance with an added feature of the invention, the layer of titanium/tungsten and the copper layer have a layer thickness of less than 0.1 μm, the layer of nickel has a layer thickness of approximately 1 μm, and the layer of gold has a layer thickness of about 0.05 μm. [0011]
  • In accordance with an additional feature of the invention, the conductive structures include a ground connecting pad for electrically connecting the conductive structures, the cap cover has a window formed therein, and the metallization is electrically connected to the pad via a through-plated hole through the window in the cap cover. [0012]
  • With the above and other objects in view there is also provided, in accordance with the invention, a method of producing a surface acoustic wave component, which comprises: [0013]
  • providing a substrate and forming electrically conductive SAW structures on the substrate, encapsulating and sealing the structures against environmental influences with a cap cover; and [0014]
  • forming an RF-shielding metallization on the cap cover, by initially vapor-depositing a material layer sequence of TiW, Cu or Ni and Au, and reinforcing with a process selected from the group consisting of a current-less process and a galvanic process. [0015]
  • In accordance with a concomitant feature of the invention, the metallization is formed by vapor depositing the layer sequence of TiW, Cu or Ni and Au, structuring the metal layer by pulsed laser radiation, and non-electrically reinforcing the vapor deposited layer with Cu. [0016]
  • Other features which are considered as characteristic for the invention are set forth in the appended claims. [0017]
  • Although the invention is illustrated and described herein as embodied in a method of producing a surface acoustic wave component, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims. [0018]
  • The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings. [0019]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a partial schematic side elevation of a SAW component with shielding according to the invention; [0020]
  • FIG. 2 is a partial schematic plan view of the component according to FIG. 1; [0021]
  • FIG. 3 is a similar view of a SAW component suitable for SMD mounting and provided with an RF shield according to the invention; and [0022]
  • FIG. 4 is a partial schematic side elevation of a SAW component which is suitable for flip-chip mounting and has RF shielding according to the invention. [0023]
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Referring now to the figures of the drawing in detail and first, particularly, to FIG. 1 thereof, there is seen a surface acoustic wave (SAW) component which, in principle, comprises a piezoelectric substrate [0024] 1 and conductive structures 3 disposed on the substrate. Such conductive structures 3 which may be, for example, the electrode fingers of interdigital transducers, resonators or reflectors. As already described in the above-mentioned copending application No. 08/743,540 (herewith incorporated by reference), the electrically conductive structures 3 are covered by a cap 2 which protects the structures against environmental influences. The component, together with the cover 2 and the substrate 1, may be directly used as a “casing”, or it can be fitted into a casing.
  • A [0025] metallization 6 which is used for RF shielding is provided on the cap 2. The metallization 6 is formed by a material layer sequence of TiW, Cu or Ni and Au and is conductively connected to a pad 4 (the connecting surface 4 of the component structures 3) via a through-plated hole 5 which passes through a window 7 in the cap 2. The metallization 6 which is used for RF shielding can be connected to ground via the pad 4.
  • FIG. 2 shows as a detail a part of the component according to FIG. 1 with the [0026] pad 4 and the through-plated hole 5, as well as the metallization 6 which covers the surface.
  • FIG. 3 shows a plan view of one embodiment of an RF shielded component which is suitable for SMD mounting. In this case, a [0027] solderable metallization 8 is provided on the surface of the cap 2 according to FIG. 1 and is conductively connected to a pad 4 via the through-plated hole 5. The multilayer metallization 6 which is used for RF shielding is thereby electrically insulated from the solderable metallization 8.
  • FIG. 4 shows a schematic illustration of an RF-shielded embodiment of a SAW component that is suitable for flip-chip mounting. In this embodiment, in which identical elements to those in the embodiment according to FIG. 1 are provided with the same reference symbols, a [0028] bump 9 is provided in the window 7 and is soldered on the substrate surface to a pad, which is not illustrated per se. The component can be mounted in an electrical circuit via such bumps 9. Additional information in this regard may be gleaned from our published international application WO 97/23950 (and copending, concurrently filed application No. (atty. docket number GR 95 P 2262 P)), which is herewith incorporated by reference.
  • In the [0029] multilayer metallization 6 that forms the RF shield, the titanium and tungsten layer ensures the adhesion capability on the cover 2, the nickel layer ensures the soldering capability, and the gold layer ensures oxidation protection. The layer thicknesses of titanium/tungsten are preferably less than 0.1 μm, that of nickel is about 1 μm and that of gold is about 0.1 or 0.05 μm. The metallization 6 can be produced in such a manner that a thin metallic layer is initially vapor-deposited onto the cover 2 and is then galvanically reinforced.
  • A particularly cost-effective variant comprises vapor-deposition of a layer sequence of TiW, Cu or Ni and Au, whose overall thickness is less than 10 μm, preferably being equal to 0.3 μm. The layer is structured by pulsed laser radiation and current-less reinforcement with Cu. The through-plated [0030] hole 5 is also produced at the same time. Finally, Au can be deposited with a thickness of 0.05 μm for passivation.
  • Since the through-plated [0031] holes 5 are produced on a substrate wafer which contains a multiplicity of components, they can also be positioned such that some of the through-plated hole is in each case associated with a component system, that is to say one through-plated hole is sufficient for two component systems.
  • The reliability can likewise be improved by providing redundant through-plated holes, that is to say by allocating two through-plated holes to one pad. [0032]

Claims (2)

We claim:
1. A method of producing a surface acoustic wave component, which comprises:
providing a substrate and forming electrically conductive SAW structures on the substrate, encapsulating and sealing the structures against environmental influences with a cap cover; and
forming an RF-shielding metallization on the cap cover, by initially vapor-depositing a material layer sequence of TiW, Cu or Ni and Au, and reinforcing with a process selected from the group consisting of a current-less process and a galvanic process.
2. The method according to
claim 1
, wherein the forming step comprises vapor depositing the layer sequence of TiW, Cu or Ni and Au, structuring by pulsed laser radiation, and non-electrically reinforcing with Cu.
US09/795,099 1995-12-21 2001-02-28 Method of producing a surface acoustic wave component Expired - Fee Related US6449828B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/795,099 US6449828B2 (en) 1995-12-21 2001-02-28 Method of producing a surface acoustic wave component

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE19548062 1995-12-21
DE19548062.7 1995-12-21
DE19548062A DE19548062A1 (en) 1995-12-21 1995-12-21 Electrical component, in particular component working with surface acoustic waves - SAW component - and a method for its production
PCT/DE1996/002408 WO1997023949A1 (en) 1995-12-21 1996-12-16 Electrical component, especially one operating with acoustic surface waves (sw component) and process for its production
US09/103,166 US6242842B1 (en) 1996-12-16 1998-06-22 Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US09/795,099 US6449828B2 (en) 1995-12-21 2001-02-28 Method of producing a surface acoustic wave component

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/103,166 Division US6242842B1 (en) 1995-12-21 1998-06-22 Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production

Publications (2)

Publication Number Publication Date
US20010010444A1 true US20010010444A1 (en) 2001-08-02
US6449828B2 US6449828B2 (en) 2002-09-17

Family

ID=6918428

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/103,166 Expired - Fee Related US6242842B1 (en) 1995-12-21 1998-06-22 Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US09/795,099 Expired - Fee Related US6449828B2 (en) 1995-12-21 2001-02-28 Method of producing a surface acoustic wave component

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US09/103,166 Expired - Fee Related US6242842B1 (en) 1995-12-21 1998-06-22 Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production

Country Status (1)

Country Link
US (2) US6242842B1 (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029632A1 (en) * 1997-04-08 2003-02-13 Anthony Anthony A. Arrangement for energy conditioning
US20030138986A1 (en) * 2001-09-13 2003-07-24 Mike Bruner Microelectronic mechanical system and methods
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
WO2005099088A1 (en) * 2004-03-26 2005-10-20 Cypress Semiconductor Corp. Integrated circuit having one or more conductive devices formed over a saw and/or mems device
US20080038577A1 (en) * 2004-08-12 2008-02-14 Epcos Ag Component Arrangement Provided With a Carrier Substrate
US7675729B2 (en) 2003-12-22 2010-03-09 X2Y Attenuators, Llc Internally shielded energy conditioner
US7688565B2 (en) 1997-04-08 2010-03-30 X2Y Attenuators, Llc Arrangements for energy conditioning
US7733621B2 (en) 1997-04-08 2010-06-08 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7768763B2 (en) 1997-04-08 2010-08-03 X2Y Attenuators, Llc Arrangement for energy conditioning
US7782587B2 (en) 2005-03-01 2010-08-24 X2Y Attenuators, Llc Internally overlapped conditioners
US7817397B2 (en) 2005-03-01 2010-10-19 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
US8026777B2 (en) * 2006-03-07 2011-09-27 X2Y Attenuators, Llc Energy conditioner structures
US8169041B2 (en) 2005-11-10 2012-05-01 Epcos Ag MEMS package and method for the production thereof
US8184845B2 (en) 2005-02-24 2012-05-22 Epcos Ag Electrical module comprising a MEMS microphone
US8229139B2 (en) 2005-11-10 2012-07-24 Epcos Ag MEMS microphone, production method and method for installing
WO2012136544A1 (en) * 2011-04-08 2012-10-11 Epcos Ag Wafer-level package and method for production thereof
US8582788B2 (en) 2005-02-24 2013-11-12 Epcos Ag MEMS microphone
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US20170077900A1 (en) * 2015-09-14 2017-03-16 Samsung Electro-Mechanics Co., Ltd. Acoustic wave device and method of manufacturing the same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
DE10016867A1 (en) * 2000-04-05 2001-10-18 Epcos Ag Component with labeling
US6953985B2 (en) * 2002-06-12 2005-10-11 Freescale Semiconductor, Inc. Wafer level MEMS packaging
JP2004222244A (en) * 2002-12-27 2004-08-05 Toshiba Corp Thin film piezoelectric resonator and manufacturing method thereof
DE10331322A1 (en) * 2003-07-10 2005-02-03 Epcos Ag Electronic component and method of manufacture
US20050116344A1 (en) * 2003-10-29 2005-06-02 Tessera, Inc. Microelectronic element having trace formed after bond layer
US20080112151A1 (en) * 2004-03-04 2008-05-15 Skyworks Solutions, Inc. Overmolded electronic module with an integrated electromagnetic shield using SMT shield wall components
US8399972B2 (en) 2004-03-04 2013-03-19 Skyworks Solutions, Inc. Overmolded semiconductor package with a wirebond cage for EMI shielding
US20060183270A1 (en) * 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
DE102005008514B4 (en) * 2005-02-24 2019-05-16 Tdk Corporation Microphone membrane and microphone with the microphone membrane
US8143095B2 (en) 2005-03-22 2012-03-27 Tessera, Inc. Sequential fabrication of vertical conductive interconnects in capped chips
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US8604605B2 (en) 2007-01-05 2013-12-10 Invensas Corp. Microelectronic assembly with multi-layer support structure
JP2008176567A (en) * 2007-01-18 2008-07-31 Fujitsu Ltd Printed circuit board assembly, casing for information technology device and information technology device
JP4638530B2 (en) * 2008-08-19 2011-02-23 日本電波工業株式会社 Piezoelectric component and manufacturing method thereof
US8948712B2 (en) 2012-05-31 2015-02-03 Skyworks Solutions, Inc. Via density and placement in radio frequency shielding applications
KR101983959B1 (en) 2012-06-14 2019-05-29 스카이워크스 솔루션즈, 인코포레이티드 Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods
PT2674413T (en) 2012-06-15 2017-09-18 Scipharm Sàrl Process for the preparation of treprostinil and derivatives thereof
CN104885216B (en) 2012-07-13 2017-04-12 天工方案公司 Racetrack design in radio frequency shielding applications
DE102013106353B4 (en) * 2013-06-18 2018-06-28 Tdk Corporation Method for applying a structured coating to a component
WO2017110994A1 (en) * 2015-12-25 2017-06-29 株式会社村田製作所 High frequency module

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037176A (en) * 1975-03-18 1977-07-19 Matsushita Electric Industrial Co., Ltd. Multi-layered substrate for a surface-acoustic-wave device
JPS5478693A (en) 1977-12-05 1979-06-22 Matsushima Kogyo Co Ltd Crystal vibrator
US4356423A (en) * 1980-11-28 1982-10-26 Teledyne Industries, Inc., Geotech Division Pressure sensitive intrusion sensing line
DE3138743A1 (en) 1981-09-29 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Surface acoustic wave filter and the like, mounted in a tight casing
US5392006A (en) * 1987-02-27 1995-02-21 Seiko Epson Corporation Pressure seal type piezoelectric resonator
US4925524A (en) * 1987-06-12 1990-05-15 Hewlett-Packard Company Method for forming tungsten structures in a semiconductor
US4890369A (en) * 1988-10-28 1990-01-02 United Technologies Corporation Method of manufacturing saw devices
US5177324A (en) * 1991-08-19 1993-01-05 Motorola, Inc. In situ RF shield for printed circuit board
JPH0590872A (en) * 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd Surface acoustic wave element
JP3188546B2 (en) * 1993-03-23 2001-07-16 キヤノン株式会社 Bonded body of insulator and conductor and bonding method
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
US5701645A (en) * 1994-04-06 1997-12-30 Motorola, Inc. Acoustic wave device manufacturing method
US5815900A (en) * 1995-03-06 1998-10-06 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave module
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
DE19548048C2 (en) * 1995-12-21 1998-01-15 Siemens Matsushita Components Electronic component, in particular component working with surface acoustic waves (SAW component)
DE19548051A1 (en) * 1995-12-21 1997-06-26 Siemens Matsushita Components Electronic component, in particular component working with surface acoustic waves - SAW component -
EP0794616B1 (en) * 1996-03-08 2003-01-29 Matsushita Electric Industrial Co., Ltd. An electronic part and a method of production thereof
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
JP3520853B2 (en) * 2001-01-26 2004-04-19 株式会社村田製作所 Surface acoustic wave device and method of manufacturing the same

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7768763B2 (en) 1997-04-08 2010-08-03 X2Y Attenuators, Llc Arrangement for energy conditioning
US8023241B2 (en) 1997-04-08 2011-09-20 X2Y Attenuators, Llc Arrangement for energy conditioning
US9036319B2 (en) 1997-04-08 2015-05-19 X2Y Attenuators, Llc Arrangement for energy conditioning
US20050016761A9 (en) * 1997-04-08 2005-01-27 Anthony Anthony A. Arrangement for energy conditioning
US7916444B2 (en) 1997-04-08 2011-03-29 X2Y Attenuators, Llc Arrangement for energy conditioning
US20030029632A1 (en) * 1997-04-08 2003-02-13 Anthony Anthony A. Arrangement for energy conditioning
US7688565B2 (en) 1997-04-08 2010-03-30 X2Y Attenuators, Llc Arrangements for energy conditioning
US8004812B2 (en) 1997-04-08 2011-08-23 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7920367B2 (en) 1997-04-08 2011-04-05 X2Y Attenuators, Llc Method for making arrangement for energy conditioning
US8587915B2 (en) 1997-04-08 2013-11-19 X2Y Attenuators, Llc Arrangement for energy conditioning
US7733621B2 (en) 1997-04-08 2010-06-08 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US8018706B2 (en) 1997-04-08 2011-09-13 X2Y Attenuators, Llc Arrangement for energy conditioning
US9019679B2 (en) 1997-04-08 2015-04-28 X2Y Attenuators, Llc Arrangement for energy conditioning
US9373592B2 (en) 1997-04-08 2016-06-21 X2Y Attenuators, Llc Arrangement for energy conditioning
US20030138986A1 (en) * 2001-09-13 2003-07-24 Mike Bruner Microelectronic mechanical system and methods
US20040053434A1 (en) * 2001-09-13 2004-03-18 Silicon Light Machines Microelectronic mechanical system and methods
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US7675729B2 (en) 2003-12-22 2010-03-09 X2Y Attenuators, Llc Internally shielded energy conditioner
WO2005099088A1 (en) * 2004-03-26 2005-10-20 Cypress Semiconductor Corp. Integrated circuit having one or more conductive devices formed over a saw and/or mems device
US7750420B2 (en) 2004-03-26 2010-07-06 Cypress Semiconductor Corporation Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device
US7608789B2 (en) 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
US20080038577A1 (en) * 2004-08-12 2008-02-14 Epcos Ag Component Arrangement Provided With a Carrier Substrate
US8582788B2 (en) 2005-02-24 2013-11-12 Epcos Ag MEMS microphone
US8184845B2 (en) 2005-02-24 2012-05-22 Epcos Ag Electrical module comprising a MEMS microphone
US8014119B2 (en) 2005-03-01 2011-09-06 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
US7974062B2 (en) 2005-03-01 2011-07-05 X2Y Attenuators, Llc Internally overlapped conditioners
US7782587B2 (en) 2005-03-01 2010-08-24 X2Y Attenuators, Llc Internally overlapped conditioners
US8547677B2 (en) 2005-03-01 2013-10-01 X2Y Attenuators, Llc Method for making internally overlapped conditioners
US7817397B2 (en) 2005-03-01 2010-10-19 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
US9001486B2 (en) 2005-03-01 2015-04-07 X2Y Attenuators, Llc Internally overlapped conditioners
US8169041B2 (en) 2005-11-10 2012-05-01 Epcos Ag MEMS package and method for the production thereof
US8229139B2 (en) 2005-11-10 2012-07-24 Epcos Ag MEMS microphone, production method and method for installing
US8432007B2 (en) 2005-11-10 2013-04-30 Epcos Ag MEMS package and method for the production thereof
US8026777B2 (en) * 2006-03-07 2011-09-27 X2Y Attenuators, Llc Energy conditioner structures
WO2012136544A1 (en) * 2011-04-08 2012-10-11 Epcos Ag Wafer-level package and method for production thereof
KR101560961B1 (en) * 2011-04-08 2015-10-15 에프코스 아게 Wafer-level package and method for production thereof
US9647196B2 (en) 2011-04-08 2017-05-09 Snaptrack, Inc. Wafer-level package and method for production thereof
US20170077900A1 (en) * 2015-09-14 2017-03-16 Samsung Electro-Mechanics Co., Ltd. Acoustic wave device and method of manufacturing the same
US10164602B2 (en) * 2015-09-14 2018-12-25 Samsung Electro-Mechanics Co., Ltd. Acoustic wave device and method of manufacturing the same

Also Published As

Publication number Publication date
US6449828B2 (en) 2002-09-17
US6242842B1 (en) 2001-06-05

Similar Documents

Publication Publication Date Title
US6449828B2 (en) Method of producing a surface acoustic wave component
US6310420B1 (en) Electronic component in particular an saw component operating with surface acoustic waves and a method for its production
US6057222A (en) Method for the production of flip-chip mounting-ready contacts of electrical components
KR100691632B1 (en) Semiconductor chip, method of manufacturing the semiconductor chip and semiconductor chip package
US6528924B1 (en) Electronic component, in particular a component operating with surface acoustic waves
US6492194B1 (en) Method for the packaging of electronic components
KR100590382B1 (en) Emi shielding for electronic packages
EP0637871B1 (en) Surface acoustic wave device mounted module
US7094626B2 (en) Method for encapsulating an electrical component
US20040237299A1 (en) Method for hermetically encapsulating a component
US20040026361A1 (en) Surface acoustic wave device its manufacturing method and electronic circuit device
US6519822B1 (en) Method for producing an electronic component
US10298199B2 (en) Acoustic wave device and method for manufacturing the same
US20060194370A1 (en) Radio frequency module and fabrication method thereof
US6685168B1 (en) Surface acoustic wave component
GB2297424A (en) Surface acoustic wave device
JP4412123B2 (en) Surface acoustic wave device
CA2241100A1 (en) Electrical component, especially one operating with acoustic surface waves (sw component) and process for its production
CN1205809A (en) Electronic component, esp. one operating with acoustic surface waves (OFW component) and process for its prodn.
US20230189429A1 (en) Module

Legal Events

Date Code Title Description
REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20060917