US20010018242A1 - Method for regenerating semiconductor wafers - Google Patents
Method for regenerating semiconductor wafers Download PDFInfo
- Publication number
- US20010018242A1 US20010018242A1 US09/796,209 US79620901A US2001018242A1 US 20010018242 A1 US20010018242 A1 US 20010018242A1 US 79620901 A US79620901 A US 79620901A US 2001018242 A1 US2001018242 A1 US 2001018242A1
- Authority
- US
- United States
- Prior art keywords
- wafer
- blast material
- wet blasting
- semiconductor wafers
- regenerating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
- B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
Definitions
- a method for regenerating semiconductor wafers used in tests for process and equipment control purposes and for other semiconductor wafers having damaged surfaces includes the step of regenerating a wafer used in circuit fabrication by removing previously applied layers on the wafer.
- the previously applied layers are removed by wet blasting using a blast material finely distributed in water and having a predetermined and substantially uniform granularity.
- the applied layers can be removed cost-effectively because it is no longer necessary to use different etching solutions.
- the burden on the environment is reduced by virtue of reduced pollutant quantities and lower water consumption.
- One embodiment provides the use of a blast material predominantly containing silicon dioxide, corundum or mixtures thereof. These substances support the removal effect of the wet blasting on account of their nature which is particularly suitable for the method, in particular through their hardness.
- a further embodiment of the invention provides for a blast material having a granularity ⁇ 100 ⁇ m to be used. This ensures optimization of the removal effect with regard to the uniformity of the removal.
- a further embodiment of the invention provides for the wet blasting with the blast material to impinge on the surface at an angle of between 60 and 90 degrees. This also contributes to increased uniformity and target accuracy of the removal process.
- Coated semiconductor wafers or semiconductor wafers whose surfaces are damaged enter a method sequence starting with a visual quality inspection, which is followed by a thickness measurement. The wafer is rejected at a thickness >680 ⁇ m. If the parameters for continuing the method are satisfied, the actual regeneration of the wafers begins in such a way that the applied layers are removed by wet blasting using a blast material which is finely distributed in water and has a predetermined and essentially uniform granularity. In this case, blast material containing silicon dioxide, corundum or mixtures thereof and having a granularity ⁇ 100 ⁇ m has proved to be particularly suitable.
- the wet blasting with the blast material impinge on the surface under a water pressure of between 2-5 bar and at an angle of between 60 and 90 degrees.
- the layers on the entire surface are removed by uniformly moving the semiconductor wafer under the blasting jet, or the blasting jet over the wafer.
- the method step is repeated, if needed, after a further visual inspection. Provided that the semiconductor wafer is not rejected because predetermined parameters have not been met, the wafer is then subsequently polished, a removal of at least 3 ⁇ m being provided.
- abrasive dust is removed (“brush clean”). This is followed by a further thickness measurement. In this case, rejection is envisaged at a thickness of less than 665 ⁇ m.
- the semiconductor wafers are subjected to fine cleaning.
- the substances hydrofluoric acid, SC1 and SC2 are employed.
- the concluding defect density determination is crucial for sorting the wafers in the test wafer store.
Abstract
Description
- The invention relates to a method for regenerating semiconductor wafers which are used in tests for process and equipment control purposes or whose surfaces are damaged to a greater or lesser extent and which are usually composed of silicon. In the context of the fabrication of circuits on semiconductor wafers, the regeneration taking place by removal of the previously applied layers.
- In chip production facilities for fabricating electronic circuits on semiconductor wafers that are preferably composed of silicon, not only the wafers on which the chip structures are produced but also a number of test wafers, usually composed of silicon, pass through the production sequence in order thus to make possible effective process and equipment control. On both wafers, thin layers composed of various materials are applied on the surface, which layers have to satisfy stringent requirements with regard to layer thickness, homogeneity, etc.
- Since layer fabrication with patterning thereof is a very difficult and cost-intensive process, attempts are made to regenerate the test wafers, or alternatively severely damaged wafers, and to return them to the process sequence as test wafers.
- It is known for silicon layers applied on semiconductor wafers to be processed by various chemical etching methods (see German Patent DE 196 24 315 C2 and Published, Non-Prosecuted German Patent Application DE 197 21 493 A1). On the one hand, the technique of chemical etching is predominantly used to eliminate unevennesses produced in the process of first obtaining the semiconductor wafer from a single-crystal rod (so-called damage). The technique is also used to pattern layers situated on the semiconductor wafer.
- In addition to this method, the technique of so-called lapping is also used to eliminate relatively coarse unevennesses of a wafer (see German Patent DE 197 55 705). This involves a mechanical surface treatment in which the semiconductor wafers are processed with rotary movements and a supply of abrasives.
- It is furthermore known for the aforementioned methods to be used in the recovery process of wafers used for test purposes. In the case of multilayer and patterned wafers, in particular, chemical etching is complicated and thus highly cost-intensive. Moreover, the required use of different etching solutions and the high water consumption result in a considerable burden on the environment. The lapping method has the disadvantage of being highly time-consuming.
- It is accordingly an object of the invention to provide a method for regenerating semiconductor wafers which overcomes the above-mentioned disadvantages of the prior art methods of this general type, which is cost-effective, environmentally friendly and is less time-consuming.
- With the foregoing and other objects in view there is provided, in accordance with the invention, a method for regenerating semiconductor wafers used in tests for process and equipment control purposes and for other semiconductor wafers having damaged surfaces. The method includes the step of regenerating a wafer used in circuit fabrication by removing previously applied layers on the wafer. The previously applied layers are removed by wet blasting using a blast material finely distributed in water and having a predetermined and substantially uniform granularity.
- In the case of the method of the type mentioned in the introduction, the problem is solved by virtue of the fact that the applied layers are removed by wet blasting using a blast material which is finely distributed in water and has a predetermined and essentially uniform granularity.
- Therefor, the applied layers can be removed cost-effectively because it is no longer necessary to use different etching solutions. At the same time, the burden on the environment is reduced by virtue of reduced pollutant quantities and lower water consumption.
- One embodiment provides the use of a blast material predominantly containing silicon dioxide, corundum or mixtures thereof. These substances support the removal effect of the wet blasting on account of their nature which is particularly suitable for the method, in particular through their hardness.
- A further embodiment of the invention provides for a blast material having a granularity <100 μm to be used. This ensures optimization of the removal effect with regard to the uniformity of the removal.
- A particularly favorable embodiment provides for the wet blasting to impinge on the plates under a water pressure of between 2-5 bar. This ensures layer removal that is as accurately targeted as possible, under optimized time conditions.
- A further embodiment of the invention provides for the wet blasting with the blast material to impinge on the surface at an angle of between 60 and 90 degrees. This also contributes to increased uniformity and target accuracy of the removal process.
- In order to meet the surface quality of the semiconductor wafers which is required for applied chip production, a chemical mechanical polishing process and fine cleaning follow the wet blasting. The fine cleaning is carried out using HF, SC1, and SC2.
- The method according to the invention is easy to realize and ensures fast and uniform layer removal.
- Other features which are considered as characteristic for the invention are set forth in the appended claims.
- Although the invention is described herein as embodied in a method for regenerating semiconductor wafers, it is nevertheless not intended to be limited to the description, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
- The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments.
- Coated semiconductor wafers or semiconductor wafers whose surfaces are damaged enter a method sequence starting with a visual quality inspection, which is followed by a thickness measurement. The wafer is rejected at a thickness >680 μm. If the parameters for continuing the method are satisfied, the actual regeneration of the wafers begins in such a way that the applied layers are removed by wet blasting using a blast material which is finely distributed in water and has a predetermined and essentially uniform granularity. In this case, blast material containing silicon dioxide, corundum or mixtures thereof and having a granularity <100 μm has proved to be particularly suitable. In this case, the wet blasting with the blast material impinge on the surface under a water pressure of between 2-5 bar and at an angle of between 60 and 90 degrees. The layers on the entire surface are removed by uniformly moving the semiconductor wafer under the blasting jet, or the blasting jet over the wafer.
- The method step is repeated, if needed, after a further visual inspection. Provided that the semiconductor wafer is not rejected because predetermined parameters have not been met, the wafer is then subsequently polished, a removal of at least 3 μm being provided.
- After the polishing, abrasive dust is removed (“brush clean”). This is followed by a further thickness measurement. In this case, rejection is envisaged at a thickness of less than 665 μm.
- Finally, the semiconductor wafers are subjected to fine cleaning. The substances hydrofluoric acid, SC1 and SC2 are employed. The concluding defect density determination is crucial for sorting the wafers in the test wafer store.
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10010820A DE10010820C1 (en) | 2000-02-29 | 2000-02-29 | Process for the regeneration of semiconductor wafers |
DE10010820 | 2000-02-29 | ||
DE10010820.2 | 2000-02-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010018242A1 true US20010018242A1 (en) | 2001-08-30 |
US6458712B2 US6458712B2 (en) | 2002-10-01 |
Family
ID=7633663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/796,209 Expired - Lifetime US6458712B2 (en) | 2000-02-29 | 2001-02-28 | Method for regenerating semiconductor wafers |
Country Status (3)
Country | Link |
---|---|
US (1) | US6458712B2 (en) |
EP (1) | EP1129823B1 (en) |
DE (1) | DE10010820C1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050029642A1 (en) * | 2003-07-30 | 2005-02-10 | Minoru Takaya | Module with embedded semiconductor IC and method of fabricating the module |
US20060057341A1 (en) * | 2004-09-16 | 2006-03-16 | Tdk Corporation | Multilayer substrate and manufacturing method thereof |
US20070069363A1 (en) * | 2005-09-28 | 2007-03-29 | Tdk Corporation | Semiconductor IC-embedded substrate and method for manufacturing same |
US20080138989A1 (en) * | 2006-12-12 | 2008-06-12 | Codding Steven R | Method to recover patterned semiconductor wafers for rework |
US20090242255A1 (en) * | 2008-03-27 | 2009-10-01 | Ibiden Co., Ltd | Wiring board with built-in electronic component and method of manufacturing same |
US20120097184A1 (en) * | 2010-10-20 | 2012-04-26 | Ki Ho Park | Method for recycling wafer |
US20130217208A1 (en) * | 2012-02-21 | 2013-08-22 | Chih-hao Chen | Method of Processing Wafers for Saving Material and Protecting Environment |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100460311B1 (en) * | 2001-08-22 | 2004-12-08 | 참엔지니어링(주) | Method for making mask or mask blank by using wasted mask |
JP2003243403A (en) * | 2002-02-13 | 2003-08-29 | Mitsubishi Electric Corp | Method of reclaiming semiconductor wafer |
US7727782B2 (en) * | 2007-06-25 | 2010-06-01 | Applied Materials, Inc. | Apparatus for improving incoming and outgoing wafer inspection productivity in a wafer reclaim factory |
US20080318343A1 (en) * | 2007-06-25 | 2008-12-25 | Krishna Vepa | Wafer reclaim method based on wafer type |
US7775856B2 (en) * | 2007-09-27 | 2010-08-17 | Applied Materials, Inc. | Method for removal of surface films from reclaim substrates |
US7851374B2 (en) | 2007-10-31 | 2010-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon wafer reclamation process |
US20090233447A1 (en) * | 2008-03-11 | 2009-09-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Control wafer reclamation process |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61159371A (en) * | 1984-12-28 | 1986-07-19 | Fuji Seiki Seizosho:Kk | Lapping method for silicone wafer for substrate of integrated circuit, etc. and blasting device therefor |
US4631250A (en) * | 1985-03-13 | 1986-12-23 | Research Development Corporation Of Japan | Process for removing covering film and apparatus therefor |
US5170245A (en) * | 1988-06-15 | 1992-12-08 | International Business Machines Corp. | Semiconductor device having metallic interconnects formed by grit blasting |
US5308404A (en) * | 1993-01-21 | 1994-05-03 | Church & Dwight Co., Inc. | Less aggressive blast media formed from compacted particles |
US5622875A (en) * | 1994-05-06 | 1997-04-22 | Kobe Precision, Inc. | Method for reclaiming substrate from semiconductor wafers |
US5855735A (en) * | 1995-10-03 | 1999-01-05 | Kobe Precision, Inc. | Process for recovering substrates |
JP3605927B2 (en) * | 1996-02-28 | 2004-12-22 | 株式会社神戸製鋼所 | Method for reclaiming wafer or substrate material |
DE19624315C2 (en) * | 1996-06-18 | 1998-06-10 | Fraunhofer Ges Forschung | Process for etching structures in a silicon layer |
JPH1027971A (en) * | 1996-07-10 | 1998-01-27 | Nec Corp | Dicing method for organic thin film multilayer wiring board |
DE19721493A1 (en) * | 1997-05-22 | 1998-11-26 | Wacker Siltronic Halbleitermat | Process for etching semiconductor wafers |
TW358764B (en) * | 1997-07-07 | 1999-05-21 | Super Silicon Crystal Res Inst | A method of double-side lapping a wafer and an apparatus therefor |
US6004363A (en) * | 1998-02-25 | 1999-12-21 | Wilshire Technologies, Inc. | Abrasive article and method for making the same |
US6287879B1 (en) * | 1999-08-11 | 2001-09-11 | Micron Technology, Inc. | Endpoint stabilization for polishing process |
-
2000
- 2000-02-29 DE DE10010820A patent/DE10010820C1/en not_active Expired - Fee Related
-
2001
- 2001-01-24 EP EP01101549A patent/EP1129823B1/en not_active Expired - Lifetime
- 2001-02-28 US US09/796,209 patent/US6458712B2/en not_active Expired - Lifetime
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7547975B2 (en) | 2003-07-30 | 2009-06-16 | Tdk Corporation | Module with embedded semiconductor IC and method of fabricating the module |
US20050029642A1 (en) * | 2003-07-30 | 2005-02-10 | Minoru Takaya | Module with embedded semiconductor IC and method of fabricating the module |
US20060057341A1 (en) * | 2004-09-16 | 2006-03-16 | Tdk Corporation | Multilayer substrate and manufacturing method thereof |
US7868464B2 (en) | 2004-09-16 | 2011-01-11 | Tdk Corporation | Multilayer substrate and manufacturing method thereof |
US20070069363A1 (en) * | 2005-09-28 | 2007-03-29 | Tdk Corporation | Semiconductor IC-embedded substrate and method for manufacturing same |
US7544537B2 (en) * | 2005-09-28 | 2009-06-09 | Tdk Corporation | Semiconductor IC-embedded substrate and method for manufacturing same |
US8034718B2 (en) * | 2006-12-12 | 2011-10-11 | International Business Machines Corporation | Method to recover patterned semiconductor wafers for rework |
US20080138989A1 (en) * | 2006-12-12 | 2008-06-12 | Codding Steven R | Method to recover patterned semiconductor wafers for rework |
US20090242255A1 (en) * | 2008-03-27 | 2009-10-01 | Ibiden Co., Ltd | Wiring board with built-in electronic component and method of manufacturing same |
US8347493B2 (en) * | 2008-03-27 | 2013-01-08 | Ibiden Co., Ltd. | Wiring board with built-in electronic component and method of manufacturing same |
US20120097184A1 (en) * | 2010-10-20 | 2012-04-26 | Ki Ho Park | Method for recycling wafer |
US20130217208A1 (en) * | 2012-02-21 | 2013-08-22 | Chih-hao Chen | Method of Processing Wafers for Saving Material and Protecting Environment |
US8956954B2 (en) * | 2012-02-21 | 2015-02-17 | Chih-hao Chen | Method of processing wafers for saving material and protecting environment |
Also Published As
Publication number | Publication date |
---|---|
DE10010820C1 (en) | 2001-09-13 |
US6458712B2 (en) | 2002-10-01 |
EP1129823A2 (en) | 2001-09-05 |
EP1129823B1 (en) | 2004-11-03 |
EP1129823A3 (en) | 2002-11-20 |
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