US20020102798A1 - Method for fabricating a self aligned s/d cmos device on insulated layer by forming a trench along the sti and fill with oxide - Google Patents

Method for fabricating a self aligned s/d cmos device on insulated layer by forming a trench along the sti and fill with oxide Download PDF

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US20020102798A1
US20020102798A1 US09/769,830 US76983001A US2002102798A1 US 20020102798 A1 US20020102798 A1 US 20020102798A1 US 76983001 A US76983001 A US 76983001A US 2002102798 A1 US2002102798 A1 US 2002102798A1
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spacers
forming
regions
elevated
substrate
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US6417054B1 (en
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Jia Zheng
Lap Chan
Elgin Quek
Ravi Sundaresan
Yang Pan
James Meng Lee
Ying Leung
Yelehanka Pradeep
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GlobalFoundries Singapore Pte Ltd
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Chartered Semiconductor Manufacturing Pte Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled

Definitions

  • This invention relates generally to fabrication of MOS semiconductor devices and more particularly to the fabrication of a self aligned elevated S/D for a MOS Transistor.
  • S/D source/drain
  • U.S. Pat. No. 6,015,727 shows a damascene process for Poly S/D contacts and Gate.
  • U.S. Pat. No. 5,804,846 (Fuller) teaches a method for a self aligned elevated S/D by W layer and CMP.
  • the present invention provides a method for a self aligned transitor with elevated S/D regions on an insulated oxide by forming a trench along side the STI and filling the trench with oxide.
  • a method for a self aligned transitor with elevated S/D regions on an insulated oxide by forming a trench along side the STI and filling the trench with oxide.
  • STI regions are formed in a substrate.
  • a gate structure is preferably comprised of: a gate dielectric layer, a gate, and a hard mask.
  • LDD regions adjacent to the gate structure in the substrate.
  • first spacers on the sidewall of the gate structure.
  • S/D trenches between the STI regions and the first spacers.
  • the S/D trenches are filled with a S/D insulating layer.
  • the first and second preferred embodiment shows different method for performing the remaining steps.
  • the invention has many advantages over the prior arts.
  • the invention effectively isolated the raised source/drain (S/D) regions from the other elements and reduces junction leakage.
  • the invention particularly improves junction leakage in Transistors with salicide processes as the salicide and silicon interface is placed away from the elevated S/D junction.
  • the invention reduces the hot carrier degradation to the gate oxide as the peak electric field is reduced.
  • FIGS. 1 through 3A and 3 B are cross sectional views for illustrating the beginning steps for the invention's method of forming a elevated S/D over a S/D insulating layer.
  • FIGS. 4 to 6 show cross sectional views for illustrating the final steps for the first preferred embodiment of invention's method of forming a S/D insulating layer under elevated S/D regions.
  • FIGS. 7 to 9 show cross sectional views for illustrating the final steps for the second preferred embodiment of invention's method of forming a S/D insulating layer under elevated S/D regions.
  • FIGS. 1 to 5 The first preferred embodiment of the invention is shown in FIGS. 1 to 5 .
  • the steps shown in FIGS. 1 to 3 A and 3 B are common to both the first and second embodiments.
  • the method can be described as follows.
  • STI regions are formed in a substrate 10 .
  • the gate structure is preferably comprised of: a gate dielectric layer 18 , a gate 22 , and a hard mask 26 .
  • the hard mask is preferably comprised of boron nitride, Silicon oxynitride, or SiN and is more preferably comprised of silicon nitride.
  • the gate is preferably comprised of polysilicon, polysilicon with a WSi x layer on top, polysilicon with Ti or TiN and is most preferably comprised of polysilicon with a WSi x layer on top.
  • first spacers 30 on the sidewall of the gate structure.
  • the first spacers 30 preferably having a width of between about 500 and 5000 ⁇ .
  • the first spacer are preferably made of silicon nitride or silicon oxide.
  • S/D trenches 38 between the STI regions and the first spacers 30 that are self aligned to the spacer and STI edge. No mask is required.
  • the S/D trenches 38 preferably having a depth beneath the substrate surface between 200 and 2000 ⁇ .
  • the S/D trenches 38 preferably having a width between 0.05 and 0.5 ⁇ m.
  • the S/D trenches 38 are filled with a “S/D insulating layer” 42 .
  • the S/D insulating layer 42 can preferably be comprised of silicon oxide (formed by oxidation), or liquid phase epitaxy (LPE).
  • the S/D insulating layer 42 is preferably comprised of oxide formed by oxidation with atomic oxygen generated by microwave power.
  • second spacers 30 on the sidewall of the gate structure.
  • the second spacers 30 have a narrower width than the first spacers.
  • the second spacers 46 have a width preferably of between about 200 and 2000 ⁇ .
  • the conductive layer is preferably comprised of polysilicon or Si x Ge 1-x .
  • planarize the conductive layer to a level of the hard mask is preferably performed using chemical-mechanical polish (CMP).
  • CMP chemical-mechanical polish
  • the conductive layer is patterned to form elevated S/D regions 54 by an isolation mask 50 having opening over the STI regions 14 and etching the conductive layer using an isolation mask 50 as an etch mask. The mask 50 is then removed.
  • the dielectric layer preferably acts as an interlevel dielectric (IDL layer).
  • IDL layer interlevel dielectric
  • silicide regions 62 can be formed over the elevated S/D regions and the gate.
  • the silicide regions can be TiSi 2 , CoSi2 or NiSi.
  • FIGS. 1 to 3 B and FIG. 6 to 9 The second preferred embodiment is shown in FIGS. 1 to 3 B and FIG. 6 to 9 .
  • top isolation layer 70 is preferably composed of silicon oxide and preferably has a thickness of between about 1000 and 8000 ⁇ .
  • the planarization process is preferably a chemical-mechanical polish (CMP).
  • a photoresist layer 74 is formed with opening over the source and drains.
  • the photoresist layers is removed.
  • FIG. 8 shows the step of forming a conductive layer 82 over the substrate 10 .
  • the filling of the elevated S/D openings 78 with elevated S/D regions 86 preferably comprises the steps of: (FIG. 8) (a) form a conductive layer 82 over the substrate 10 , and (b) chemical-mechanical polish (CMP) the conductive layer 82 and etching back the elevated S/D regions 86 to a level below the top surface of the top isolation layer 70 .
  • CMP chemical-mechanical polish
  • the elevated S/D regions 86 can be etched back to recess the top surface of the elevated S/D regions below the top isolation layer 70 surface.
  • silicide regions 90 can be formed over the elevated S/D regions and the gate (for example, see FIG. 5 b ).
  • a semiconductor includes a variety of different materials which are known to have the behavioral characteristics of a semiconductor.
  • Silicon as used in this application, includes polysilicon (polycrystalline silicon), amorphous silicon (noncrystalline silicon), monocrystalline silicon and silicon/germanium materials. Such silicon may be n- or p-doped, or undoped.

Abstract

A method for a self aligned TX with elevated source/drain (S/D) regions on an insulated layer (oxide) by forming a trench along side the STI and filling the trench with oxide. STI regions are formed in a substrate. A gate structure is formed. LDD regions are formed adjacent to the gate structure in the substrate. Spacers are formed on the sidewall of the gate structure. We etch S/D trenches between the STI regions and the first spacers. The S/D trenches are filled with a S/D insulating layer. Elevated S/D regions are formed over the S/D insulating layer and the LDD regions. A top isolation layer is formed over the STI regions. The invention builds the raised source/drain (S/D) regions on an insulating layer and reduces junction leakage and hot carrier degradation to gate oxide.

Description

    BACKGROUND OF INVENTION
  • 1) Field of the Invention [0001]
  • This invention relates generally to fabrication of MOS semiconductor devices and more particularly to the fabrication of a self aligned elevated S/D for a MOS Transistor. [0002]
  • 2) Description of the Prior Art [0003]
  • As devices are scaled down, source/drain (S/D) formation needs to be improved in order to avoid junction leakage due to the shallow junction and the salicide formation. [0004]
  • The importance of overcoming the various deficiencies noted above is evidenced by the extensive technological development directed to the subject, as documented by the relevant patent and technical literature. The closest and apparently more relevant technical developments in the patent literature can be gleaned by considering U.S. Pat. No. 5,422,289 (Pierce) shows elevated S/D formed by CMP a poly layer. [0005]
  • U.S. Pat. No. 6,015,727 (Wanlass) shows a damascene process for Poly S/D contacts and Gate. [0006]
  • U.S. Pat. No. 5,804,846 (Fuller) teaches a method for a self aligned elevated S/D by W layer and CMP. [0007]
  • However, better isolation for elevated source/drain (S/D) regions is still required. [0008]
    • SUMMARY OF THE INVENTION
  • It is an object of the present invention to provide a method for fabricating a MOS transistor with elevated S/D regions that has reduced junction leakage. [0009]
  • It is an object of the present invention to provide a method for fabricating a MOS transistor with elevated S/D regions that are formed over an S/D insulating layer. [0010]
  • It is an object of the present invention to provide a method for fabricating a MOS transistor with elevated S/D regions that are salicided. [0011]
  • It is an object of the present invention to provide a method for fabricating a MOS transistor with elevated S/D regions that has improved hot carrier integrity. [0012]
  • To accomplish the above objectives, the present invention provides a method for a self aligned transitor with elevated S/D regions on an insulated oxide by forming a trench along side the STI and filling the trench with oxide. There are two preferred embodiment of the invention. [0013]
  • The method can be described as follows. STI regions are formed in a substrate. Next, we form a gate structure. The gate structure is preferably comprised of: a gate dielectric layer, a gate, and a hard mask. We then form LDD regions adjacent to the gate structure in the substrate. We form first spacers on the sidewall of the gate structure. We etch S/D trenches between the STI regions and the first spacers. The S/D trenches are filled with a S/D insulating layer. [0014]
  • The first and second preferred embodiment shows different method for performing the remaining steps. Next, we form elevated S/D regions over the S/D insulating layer and the LDD regions. We also, form a top isolation layer over the STI regions. [0015]
  • The invention has many advantages over the prior arts. The invention effectively isolated the raised source/drain (S/D) regions from the other elements and reduces junction leakage. The invention particularly improves junction leakage in Transistors with salicide processes as the salicide and silicon interface is placed away from the elevated S/D junction. [0016]
  • The invention reduces the hot carrier degradation to the gate oxide as the peak electric field is reduced. [0017]
  • Additional objects and advantages of the invention will be set forth in the description that follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of instrumentalities and combinations particularly pointed out in the append claims.[0018]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The features and advantages of a semiconductor device according to the present invention and further details of a process of fabricating such a semiconductor device in accordance with the present invention will be more clearly understood from the following description taken in conjunction with the accompanying drawings in which like reference numerals designate similar or corresponding elements, regions and portions and in which: [0019]
  • FIGS. 1 through 3A and [0020] 3B are cross sectional views for illustrating the beginning steps for the invention's method of forming a elevated S/D over a S/D insulating layer.
  • FIGS. [0021] 4 to 6 show cross sectional views for illustrating the final steps for the first preferred embodiment of invention's method of forming a S/D insulating layer under elevated S/D regions.
  • FIGS. [0022] 7 to 9 show cross sectional views for illustrating the final steps for the second preferred embodiment of invention's method of forming a S/D insulating layer under elevated S/D regions.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • A. First Preferred Embodiment—FIGS. [0023] 1 to 4B.
  • The first preferred embodiment of the invention is shown in FIGS. [0024] 1 to 5. The steps shown in FIGS. 1 to 3A and 3B are common to both the first and second embodiments. The method can be described as follows.
  • As shown in FIG. 1, STI regions are formed in a [0025] substrate 10.
  • Next, we form a gate structure. The gate structure is preferably comprised of: a gate [0026] dielectric layer 18, a gate 22, and a hard mask 26. The hard mask is preferably comprised of boron nitride, Silicon oxynitride, or SiN and is more preferably comprised of silicon nitride.
  • The gate is preferably comprised of polysilicon, polysilicon with a WSi[0027] x layer on top, polysilicon with Ti or TiN and is most preferably comprised of polysilicon with a WSix layer on top.
  • We then form [0028] LDD regions 32 adjacent to the gate structure in the substrate 10.
  • Still referring to FIG. 1, we form [0029] first spacers 30 on the sidewall of the gate structure. The first spacers 30 preferably having a width of between about 500 and 5000 Å. The first spacer are preferably made of silicon nitride or silicon oxide.
  • As shown in FIG. 2 we etch S/[0030] D trenches 38 between the STI regions and the first spacers 30 that are self aligned to the spacer and STI edge. No mask is required. The S/D trenches 38 preferably having a depth beneath the substrate surface between 200 and 2000 Å. The S/D trenches 38 preferably having a width between 0.05 and 0.5 μm.
  • As shown in FIG. 3A the S/[0031] D trenches 38 are filled with a “S/D insulating layer” 42. The S/D insulating layer 42 can preferably be comprised of silicon oxide (formed by oxidation), or liquid phase epitaxy (LPE). The S/D insulating layer 42 is preferably comprised of oxide formed by oxidation with atomic oxygen generated by microwave power.
  • Next, we etch back the [0032] first spacers 30 to form thinner second spacers 46 and expose some of the surface of the LDD regions 48.
  • As shown in FIG. 3B, we form [0033] second spacers 30 on the sidewall of the gate structure. The second spacers 30 have a narrower width than the first spacers. The second spacers 46 have a width preferably of between about 200 and 2000 Å.
  • Next, we form a conductive layer (not shown) over the STI regions, S/D regions, the gate structure and the substrate. The conductive layer is preferably comprised of polysilicon or Si[0034] xGe1-x.
  • We planarize the conductive layer to a level of the hard mask. The planarizing of the conductive layer is preferably performed using chemical-mechanical polish (CMP). [0035]
  • Next, we etch back the conductive layer to a level below the top surface of the hard mask. [0036]
  • As shown in FIG. 4, we pattern the conductive layer using the [0037] mask 50 to form elevated S/D regions 54 over the S/D insulating layer 42 and the substrate adjacent to the second spacers.
  • The conductive layer is patterned to form elevated S/[0038] D regions 54 by an isolation mask 50 having opening over the STI regions 14 and etching the conductive layer using an isolation mask 50 as an etch mask. The mask 50 is then removed.
  • As shown in FIG. 5A, we form a [0039] dielectric layer 58 over the substrate 10. The dielectric layer preferably acts as an interlevel dielectric (IDL layer).
  • As shown in FIG. 5B, optionally, [0040] silicide regions 62 can be formed over the elevated S/D regions and the gate. The silicide regions can be TiSi2, CoSi2 or NiSi.
  • B. Second Embodiment [0041]
  • The second preferred embodiment is shown in FIGS. [0042] 1 to 3B and FIG. 6 to 9.
  • The process is the same as first embodiment as shown in FIGS. [0043] 1 to 3B and as described above. After the second spacers 46 are formed (See FIG. 3B), the second embodiment begins.
  • As shown in FIG. 6, we form a [0044] top isolation layer 70 over the substrate 10. The top isolation layer 70 is preferably composed of silicon oxide and preferably has a thickness of between about 1000 and 8000 Å.
  • As shown in FIG. 6, we planarize the [0045] top isolation layer 70 to the level of the hard mask. The planarization process is preferably a chemical-mechanical polish (CMP).
  • Next, a [0046] photoresist layer 74 is formed with opening over the source and drains.
  • As shown in FIG. 7, next we pattern/etch the [0047] top isolation layer 70 through the openings in the resist 74 to form elevated S/D openings 78 over the S/D insulating layer 42 and the LDD regions 32. The photoresist layers is removed.
  • FIG. 8 shows the step of forming a [0048] conductive layer 82 over the substrate 10.
  • As shown in FIG. 9, we fill the elevated S/[0049] D openings 78 with elevated S/D regions 86. The filling of the elevated S/D openings 78 with elevated S/D regions 86 preferably comprises the steps of: (FIG. 8) (a) form a conductive layer 82 over the substrate 10, and (b) chemical-mechanical polish (CMP) the conductive layer 82 and etching back the elevated S/D regions 86 to a level below the top surface of the top isolation layer 70.
  • Optionally, as shown in FIG. 9, the elevated S/[0050] D regions 86 can be etched back to recess the top surface of the elevated S/D regions below the top isolation layer 70 surface.
  • Optionally, silicide regions [0051] 90 can be formed over the elevated S/D regions and the gate (for example, see FIG. 5b).
  • As a preface to the detailed description, it should be noted that, as used in this specification and the appended claims, the singular forms “a”, “an”, and “the” include plural referents, unless the context clearly dictates otherwise. Thus, for example, the term “a semiconductor” includes a variety of different materials which are known to have the behavioral characteristics of a semiconductor. [0052]
  • Silicon, as used in this application, includes polysilicon (polycrystalline silicon), amorphous silicon (noncrystalline silicon), monocrystalline silicon and silicon/germanium materials. Such silicon may be n- or p-doped, or undoped. [0053]
  • In the above description numerous specific details are set forth such as flow rates, pressure settings, thicknesses, etc., in order to provide a more thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that the present invention may be practiced without these details. In other instances, well known process have not been described in detail in order to not unnecessarily obscure the present invention. Also, the flow rates in the specification can be scaled up or down keeping the same molar % or ratios to accommodate difference sized reactors as is known to those skilled in the art. [0054]
  • While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention. It is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.[0055]

Claims (21)

What is claimed is:
1. A method of fabrication of an elevated S/D for a MOS device; comprising the steps of
a) forming STI regions in a substrate;
b) forming a gate structure comprised of: a gate dielectric layer 18, a gate, and a hard mask;
c) forming LDD regions adjacent to said gate structure in said substrate;
d) forming first spacers on the sidewall of said gate structure;
e) etching S/D trenches between said STI regions and said first spacers;
f) filling said S/D trenches with a S/D insulating layer;
g) forming a conductive layer over said STI regions, said gate structure and said substrate;
h) planarizing said conductive layer to a level of said hard mask;
i) patterning said conductive layer to form elevated S/D regions over said S/D insulating layer and said substrate adjacent to said second spacers; and
j) forming a dielectric layer over the substrate.
2. The method of claim 1 which further includes: planarizing said dielectric layer to the level of said hard mask; and forming silicide on said elevated SID regions.
3. The method of claim 1 wherein said first spacers having a width of between about 500 and 5000 Å.
4. The method of claim 1 wherein said S/D trenches having a depth beneath the substrate surface between 200 and 2000 Å.
5. The method of claim 1 wherein said S/D trenches having a width between 0.05 and 0.5 μm.
6. The method of claim 1 wherein said S/D insulating layer comprised of liquid phase epitaxy oxide or oxide by low temperature oxidation by atomic oxygen.
7. The method of claim 1 wherein said conductive layer comprised of polysilicon or SiGe.
8. The method of claim 1 wherein the planarizing of said conductive layer performed using chemical-mechanical polish (CMP).
9. The method of claim 1 wherein said conductive layer is patterned to form elevated S/D regions by forming an isolation mask having opening over the STI regions and etching said conductive layer using an isolation mask as an etch mask.
10. The method of claim 1 wherein after step (f) and before step g) the following steps are performed : etching said first spacers to form second spacers on the sidewall of said gate structure.
11. The method of claim 1 wherein after step (f) and before step (g) the following steps are performed : removing said first spacers; and forming second spacers on the sidewall of said gate structure; and said second spacers have a narrower width than said first spacers and said second spacers have a width of between about 200 and 2000 Å.
12. A method of fabrication of an elevated S/D for a MOS device; comprising the steps of
a) forming STI regions in a substrate;
b) forming a gate structure comprised of: a gate dielectric layer, a gate, and a hard mask;
c) forming LDD regions adjacent to said gate structure in said substrate;
d) forming first spacers on the sidewall of said gate structure;
(1) said first spacers having a width of between about 500 and 5000 Å;
e) etching S/D trenches between said STI regions and said first spacers;
(1) said S/D trenches having a depth beneath the substrate surface between 200 and 2000 Å;
(2) said S/D trenches having a width between 0.05 and 0.5 μm;
f) filling said S/D trenches with a S/D insulating layer;
(1) said S/D insulating layer comprised of liquid phase epitaxy oxide;
g) etching said first spacers to form second spacers on the sidewall of said gate structure; said second spacers have a narrower width than said first spacers;
h) forming a conductive layer over said STI regions, said gate structure and said substrate;
(1) said conductive layer comprised of polysilicon;
i) planarizing said conductive layer to a level of said hard mask;
(1) the planarizing of said conductive layer performed using chemical-mechanical polish (CMP);
j) etching back said conductive layer to a level of said hard mask to a level below said hard mask;
k) patterning said conductive layer to form elevated S/D regions over said S/D insulating layer and said substrate adjacent to said second spacers;
(1) said conductive layer is patterned to form elevated S/D regions by forming an isolation mask having opening over the STI regions and etching said conductive layer using an isolation mask as an etch mask.
l) forming a dielectric layer over the substrate; planarizing said dielectric layer to the level of said hard mask; and
m) forming silicide on said elevated S/D regions.
13. A method of fabrication of an elevated S/D for a MOS device; comprising the steps of:
a) forming STI regions in a substrate;
b) forming a gate structure comprised of: a gate dielectric layer, a gate, and a hard mask;
c) forming LDD regions adjacent to said gate structure in said substrate;
d) forming first spacers on the sidewall of said gate structure;
e) etching S/D trenches between said STI regions and said first spacers;
f) filling said S/D trenches with a S/D insulating layer;
g) etching back said first spacers to form second spacers on the sidewall of said gate structure;
h) forming a top isolation layer over said substrate;
i) planarizing said top isolation layer to the level of said hard mask;
j) patterning said top isolation layer to form elevated S/D openings over said S/D insulating layer and said LDD regions;
k) filling said elevated S/D openings with elevated S/D regions.
14. The method of claim 13 wherein said first spacers having a width of between about 500 and 5000 Å.
15. The method of claim 13 wherein said S/D trenches having a depth beneath the substrate surface between 200 and 2000 Å.
16. The method of claim 13 wherein said S/D trenches having a width between 0.05 and 0.5 μm.
17. The method of claim 13 wherein said S/D insulating layer comprised of liquid phase epitaxy oxide.
18. The method of claim 13 wherein said second spacers have a narrower width than said first spacers.
19. The method of claim 13 wherein said second spacers have a width of between about 200 and 2000 Å.
20. The method of claim 13 wherein the filling of said elevated S/D openings with elevated S/D regions comprises the steps of: forming a conductive layer over said substrate; and chemical-mechanical polish (CMP) said a conductive layer and etching back said elevated S/D regions to a level below the top surface of said top isolation layer.
21. A method of fabrication of an elevated S/D for a MOS device; comprising the steps of :
a) forming STI regions in a substrate;
b) forming a gate structure comprised of: a gate dielectric layer18, a gate, and a hard mask;
c) forming LDD regions adjacent to said gate structure in said substrate;
d) forming first spacers on the sidewall of said gate structure;
(1) said first spacers having a width of between about 500 and 5000 Å;
e) etching S/D trenches between said STI regions and said first spacers;
(1) said SID trenches having a depth beneath the substrate surface between 200 and 20000 Å;
(2) said S/D trenches having a width between 0.05 and 0.5 μm;
(3) said S/D trenches are etched by forming a S/D trench mask (e.g., photoresist) having opening over the areas were said between said S/D trenches are to be formed and etching the substrate using the S/D trench mask as an etch mask;
f) filling said S/D trenches with a S/D insulating layer;
(1) said S/D insulating layer comprised of liquid epitaxy oxide;
g) etching back said first spacers to form second spacers on the sidewall of said gate structure; said second spacers have a narrower width than said first spacers;
(1) said second spacers have a width of between about 200 and 2000 Å;
h) forming a top isolation layer over said substrate;
i) planarizing said top isolation layer to the level of said hard mask;
j) patterning said top isolation layer to form elevated S/D openings over said S/D insulating layer and said LDD regions; and
k) filling said elevated S/D openings with elevated S/D regions;
(1) the filling of said elevated S/D openings with elevated S/D regions comprises the steps of forming a conductive layer over said substrate; and chemical-mechanical polish (CMP) said a conductive layer and etching back said elevated S/D regions to a level below the top surface of said top isolation layer.
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