US20040033760A1 - Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile - Google Patents
Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile Download PDFInfo
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- US20040033760A1 US20040033760A1 US10/640,209 US64020903A US2004033760A1 US 20040033760 A1 US20040033760 A1 US 20040033760A1 US 64020903 A US64020903 A US 64020903A US 2004033760 A1 US2004033760 A1 US 2004033760A1
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- pad
- reliefs
- wear
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- polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Definitions
- the present invention relates to an apparatus for performing chemical mechanical polishing (CMP) during manufacture of a semiconductor device on a semiconductor substrate.
- CMP chemical mechanical polishing
- the present invention has particular applicability to monitoring CMP to ensure process quality.
- CMP Chemical mechanical polishing
- a rotating holder 12 supports a wafer 14 , while a rotating platen 11 holds a polishing pad 17 , usually via an adhesive.
- a first supply nozzle 15 drips a polishing solution in the form of an abrasive slurry onto polishing pad 17
- a second supply nozzle 16 drips water onto polishing pad 17 for rinsing.
- pad 17 is larger than wafer 14 (e.g., pad 17 has a 10-inch radius and wafer 14 has an 8-inch diameter), and the wafer and pad are rotated in the same direction at the same speed while they are urged against each other, to effect polishing of wafer 14 .
- wafer 14 is typically moved across pad 17 during polishing, but kept away from the center of pad 17 to avoid unwanted torque effects and uneven polishing. As a result, the footprint of polishing pad 17 on wafer 14 during polishing is equivalent to a belt, and the same amount of material is removed across the surface of wafer 14 .
- Pad wear is also affected by “conditioning” of the pad, a procedure wherein the polishing pad surface is restored to an abrasive condition after being glazed (i.e., made smoother and less abrasive) by normal use.
- the unevenness of pad wear is expressed graphically in FIG. 2 as a “wear gradient” line W 1 .
- wear is likely to be non-uniform; e.g., pad wear may increase towards the outer radius of pad 17 , while the center may not wear at all. This is in contrast to the ideal wear gradient W 2 , which is even across the pad.
- Prior art techniques for monitoring the condition of CMP polishing pads include removing the pad from the platen, cutting a strip from the pad, and measuring its thickness.
- a more advanced, non-destructive pad testing methodology comprises running a stylus across the polishing pad while it is attached to the platen to measure the pad's thickness. This method requires that the stylus be stably mounted relative to the pad and platen, and requires that the stylus run across the pad in a reproducible manner, since the stylus must be run across the pad before polishing, and again after polishing, and its measurements compared. However, the reproducibility necessary for accurate measurements can be difficult to achieve.
- the pad is abraded, exposed to the slurry and exposed to water, resulting in different frictional properties across the pad that cause the stylus to rock and produce inconsistent measurements.
- the relatively rigid polishing pad is often “stacked” with a compliant foam underlayer between the pad and the platen.
- the underlayer can swell during operation as it absorbs liquids such as water and/or slurry, and can become compressed during polishing due to the pressure applied between the pad and the wafer, thereby adversely affecting the accuracy of pad thickness measurements.
- An aspect of the present invention is a simplified method of monitoring pad wear, pad profile and pad wear profile that does not depend on location of the pad or location of the measuring device for accuracy.
- a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad.
- Another aspect of the present invention is a method for measuring wear of the thickness of a chemical mechanical polishing pad, the method comprising providing a plurality of reliefs in a main polishing surface of the pad, and measuring a distance from the main polishing surface to a bottom surface of the reliefs.
- FIG. 1 illustrates a conventional CMP apparatus.
- FIG. 2 graphically illustrates CMP pad wear gradient.
- FIG. 3A is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 3B is a cross-sectional view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 3C is a cross-sectional view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 4 is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 5 is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 6 is a flow chart illustrating the methodology of an embodiment of the present invention.
- a plurality of strategically located reliefs are provided in the polishing surface of a CMP polishing pad, the reliefs extending either partially or completely through the thickness of the pad.
- the reliefs may include trenches in the pad that have an upper “lip” at the surface of the pad and a lower “ledge” at the bottom of the relief.
- the reliefs are scanned, as by a conventional stylus-type instrument or a conventional contactless displacement sensor such as a laser.
- the instrument detects one flat surface (the lip) and then detects another flat surface (the ledge), thus enabling the instrument to accurately measure the depth of the relief independent of the position of the pad or the position of the measuring hardware.
- the reliefs are scanned before the pad is used and then scanned again after use to measure the difference in the depth of the reliefs, thereby indicating pad wear. Such information is then used to monitor total pad wear, and to generate a pad profile and a pad wear profile.
- the present invention provides accurate pad thickness measurements quickly and easily, thereby enabling the pad wear profile to be closely monitored; e.g., measured every 50-100 wafers, in a cost-effective manner. Consequently, process monitoring can be improved by utilizing the present invention in a feedback loop to reduce variation in process quality, to indicate that process changes are required, and to modify conditioning residence times, conditioning load and/or relative conditioning velocity as a function of pad location.
- FIGS. 3 A- 3 C An embodiment of the present invention is illustrated in FIGS. 3 A- 3 C.
- a plurality of reliefs 310 are provided in a predetermined pattern in a conventional polishing pad 300 having a thickness t, such as the IC1000 polishing pad available from Rodel Corporation of Phoenix, Ariz.
- Reliefs 310 extend partially through pad 300 to a depth d as shown in FIG. 3B or, in an alternative embodiment of the present invention shown in FIG. 3C, reliefs 320 extend completely through pad 300 , exposing underlayer 330 .
- Reliefs 310 , 320 can be formed by cutting, embossing or machining pad 300 , or are integrally molded with pad 300 .
- through-hole type reliefs 320 can be formed by punching or stamping.
- Reliefs 310 , 320 have a length 1 , width w and shape (e.g., rectangular, square, triangular, circular) such that they can be probed with a conventional stylus-type instrument such as an LVDT (Linear Velocity Differential Transformer) available from Lucas/Signatone Corp. of Gilroy, Calif., or a conventional laser interferometer such as available from MTI Instruments of Albany, N.Y.
- LVDT Linear Velocity Differential Transformer
- Reliefs 310 , 320 are spaced apart a distance s such that a quantity of reliefs adequate to indicate pad wear accurately are provided.
- pad 300 has a thickness t of about 50 mil
- rectangular or square reliefs 310 are formed to a depth d of about 30 mil, width w of about 20 mil to about 500 mil, and length l of about 20 mil to about 500 mil, and are spaced about 250 mil to about 10,000 mil apart.
- the trench-type reliefs 310 of the embodiment of FIG. 3B can be utilized rather than the through-hole type reliefs 320 of FIG. 3C if a stylus probe is used having a limited range of travel.
- a laser probe can adequately handle deep reliefs and through-hole type reliefs 320 .
- Through-hole reliefs 320 are advantageous in that they enable direct measurement of the physical pad dimension t, although accuracy may be affected by the necessity of measuring to the compliant underlayer 330 which, as discussed above, is compressible, and may swell due to absorption of liquid.
- Trench-type reliefs 310 avoid dependence on underlayer 330 since the measurement of depth d of trench-type reliefs 310 is made from one stable surface 300 a to another stable surface 300 b.
- reliefs 310 , 410 , 510 can be arranged in a pattern enabling pad wear to be measured at a plurality of locations on pad 300 , 400 , 500 , respectively, such that pad wear profile is determinable as a function of pad radius (e.g., to determine if the pad is wearing more at the outer edge due to sweeping of the wafer relative to the pad during polishing). Furthermore, reliefs 310 , 410 , 510 can be distributed to also enable development of a two-dimensional pad wear profile; for example, to enable monitoring of whether one portion of pad 300 , 400 , 500 is wearing at a higher rate than another portion. Such information is useful in determining the evenness of the platen (not shown), the evenness of the pad, the presence of air bubbles under the pad, and the consistency of adhesion between the pad and platen.
- FIG. 4 illustrates an alternative embodiment of the present invention, wherein reliefs 410 are provided in pad 400 in a spiral pattern. A wafer being polished by pad 400 sees only one relief 410 at a time (rather than the line of reliefs 310 seen by a wafer being polished by pad 300 ).
- the spiral relief pattern distributes pad stress originating from reliefs 410 across the surface of pad 400 , avoiding stress concentrations that may arise from the line of reliefs of pad 300 .
- the combination of the spiral pattern, rotational speed and wafer sweep can be chosen to avoid having the pattern look like a line to the wafer.
- the pattern of reliefs 510 is a non-symmetrical pseudo-random spiral distribution. This distribution is typically computer-designed and mapped such that the location of each relief 510 is known, and so that reliefs 510 are advantageously located to accurately measure pad wear and pad wear profile without introducing undesirable stress-inducing symmetry into the system.
- the methodology of an embodiment of present invention will now be described with reference to FIGS. 3A, 3B and the flow chart of FIG. 6.
- the reliefs of a polishing pad e.g., reliefs 310 of pad 300 in FIGS. 3A and 3B
- polishing pad 300 is then used to polish a predetermined number of wafers at step 620 ; for example, 50 wafers.
- reliefs 310 are scanned again by the laser or LVDT stylus to measure their depth d.
- steps 610 and 630 are used to calculate the pad wear at each relief 310 (see step 640 ), and the pad wear measurements are used at step 650 to generate a pad wear profile.
- the calculations of steps 640 and 650 can be carried out electronically by a computer processor.
- step 660 the process parameters are changed for the next group of wafers to be processed by pad 300 , as desired by the user. For example, to improve the flatness of the pad wear profile, one or more of the following variables is typically adjusted:
- the present invention provides a feedback loop to monitor pad flatness, platen flatness, consistency of pad to platen adhesion and the presence of air bubbles between pad and platen, and improve the quality of the CMP process.
- the present invention is also useful for controlling pad flatness to attain an ideal pad wear gradient after process parameters that affect pad wear have been changed.
- pad wear and pad wear profile can be measured by the techniques of FIG. 6 when a different slurry, conditioner or pad is introduced, or after a mechanical change to the appaatus such as a different size pad or wafer.
- the present invention extends the useful life of a polishing pad after pad wear problems have occurred. For example, since the pad wear rates and wear profile is determinable by the present invention, excessively worn areas of the pad can be avoided while “good” areas are used for polishing, rather than discarding the pad. Alternatively, the above-discussed variables can be adjusted based on the pad wear profile or wear rate to maintain the polishing rate at a problematic portion of the pad.
- the present invention is applicable to the manufacture of various types of semiconductor devices, particularly high-density semiconductor devices having a design rule of about 0.18 ⁇ and under.
- the present invention can be practiced by employing conventional materials, methodology and equipment. Accordingly, the details of such materials, equipment and methodology are not set forth herein in detail. In the previous descriptions, numerous specific details are set forth, such as specific materials, structures, chemicals, processes, etc., in order to provide a thorough understanding of the present invention. However, it should be recognized that the present invention can be practiced without resorting to the details specifically set forth. In other instances, well known processing structures have not been described in detail, in order not to unnecessarily obscure the present invention.
Abstract
A method and apparatus for measuring wear of the thickness of a chemical mechanical polishing pad are provided. The apparatus includes a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad. In one aspect, the pad reliefs comprise through-holes in the pad or extend partially through a thickness of the pad. The method for measuring wear of the thickness of a chemical mechanical polishing pad includes providing a plurality of reliefs in a main polishing surface of the pad and measuring a distance from the main polishing surface to a bottom surface of each of a plurality of the reliefs.
Description
- This application is a continuation of co-pending U.S. patent application Ser. No. 09/826,419, filed Apr. 5, 2001, which claims benefit of U.S. Provisional Patent Application Serial No. 60/195,523, filed Apr. 7, 2000. Each of the aforementioned related patent applications is herein incorporated by reference.
- 1. Field of the Invention
- The present invention relates to an apparatus for performing chemical mechanical polishing (CMP) during manufacture of a semiconductor device on a semiconductor substrate. The present invention has particular applicability to monitoring CMP to ensure process quality.
- 2. Description of the Related Art
- Chemical mechanical polishing (CMP) is a conventional semiconductor device manufacturing technique employed to flatten films, such as interlayer insulating films, and to form metal plugs and interconnections in multiple-layer interconnection processes. As shown in FIG. 1, in a typical CMP apparatus, a rotating
holder 12 supports awafer 14, while a rotatingplaten 11 holds apolishing pad 17, usually via an adhesive. Afirst supply nozzle 15 drips a polishing solution in the form of an abrasive slurry ontopolishing pad 17, and asecond supply nozzle 16 drips water ontopolishing pad 17 for rinsing. Typically,pad 17 is larger than wafer 14 (e.g.,pad 17 has a 10-inch radius andwafer 14 has an 8-inch diameter), and the wafer and pad are rotated in the same direction at the same speed while they are urged against each other, to effect polishing ofwafer 14. Additionally,wafer 14 is typically moved acrosspad 17 during polishing, but kept away from the center ofpad 17 to avoid unwanted torque effects and uneven polishing. As a result, the footprint ofpolishing pad 17 onwafer 14 during polishing is equivalent to a belt, and the same amount of material is removed across the surface ofwafer 14. - As
wafer 14 is swept acrosspad 17 during polishing, some portions ofpad 17 may wear to a greater extent than other portions ofpad 17. Pad wear is also affected by “conditioning” of the pad, a procedure wherein the polishing pad surface is restored to an abrasive condition after being glazed (i.e., made smoother and less abrasive) by normal use. The unevenness of pad wear is expressed graphically in FIG. 2 as a “wear gradient” line W1. Depending on the conditioning of the pad, wear is likely to be non-uniform; e.g., pad wear may increase towards the outer radius ofpad 17, while the center may not wear at all. This is in contrast to the ideal wear gradient W2, which is even across the pad. Disadvantageously, ifpad 17 is worn unevenly, whether due to polishing or conditioning,wafer 14 will see a pressure gradient across pad 17 (e.g., less pressure or “load” towards the edge of pad 17), resulting in less polishing at the edge ofpad 17, and uneven polishing of the wafer surface. Moreover, even if the CMP process parameters are optimized so pad wear is even, the rate of wear changes from pad to pad. Thus, it is desirable for process control purposes to monitor pad thickness in situ. - Prior art techniques for monitoring the condition of CMP polishing pads include removing the pad from the platen, cutting a strip from the pad, and measuring its thickness. A more advanced, non-destructive pad testing methodology comprises running a stylus across the polishing pad while it is attached to the platen to measure the pad's thickness. This method requires that the stylus be stably mounted relative to the pad and platen, and requires that the stylus run across the pad in a reproducible manner, since the stylus must be run across the pad before polishing, and again after polishing, and its measurements compared. However, the reproducibility necessary for accurate measurements can be difficult to achieve. During polishing, the pad is abraded, exposed to the slurry and exposed to water, resulting in different frictional properties across the pad that cause the stylus to rock and produce inconsistent measurements. Furthermore, the relatively rigid polishing pad is often “stacked” with a compliant foam underlayer between the pad and the platen. The underlayer can swell during operation as it absorbs liquids such as water and/or slurry, and can become compressed during polishing due to the pressure applied between the pad and the wafer, thereby adversely affecting the accuracy of pad thickness measurements.
- An improved methodology for inspecting pad wear is disclosed in copending U.S. application Ser. No. 09/338,357, filed Jun. 22, 1999, wherein a pad wear profile is generated using a contactless displacement sensor, such as a laser displacement sensor. The method of the copending application solves some of the problems inherent in stylus-type pad measurement techniques; however, the measuring apparatus must still be stably mounted relative to the pad, and reproducibility of measurements is still problematic due to stacking of the pad on a compliant underlayer.
- As semiconductor devices become more complex and process windows shrink, the need for in-process monitoring of manufacturing techniques such as CMP has become increasingly critical. There exists a need for a simplified, accurate methodology for monitoring CMP pad wear and pad wear profile, thereby reducing manufacturing costs and increasing production throughput.
- An aspect of the present invention is a simplified method of monitoring pad wear, pad profile and pad wear profile that does not depend on location of the pad or location of the measuring device for accuracy.
- Additional aspects and other features of the present invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from the practice of the invention. Aspects of the invention may be realized and obtained as particularly pointed out in the appended claims.
- According to the present invention, the foregoing and other aspects are achieved in part by a chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad.
- Another aspect of the present invention is a method for measuring wear of the thickness of a chemical mechanical polishing pad, the method comprising providing a plurality of reliefs in a main polishing surface of the pad, and measuring a distance from the main polishing surface to a bottom surface of the reliefs.
- Additional aspects of the present invention will become readily apparent to those skilled in this art from the following detailed description, wherein only the preferred embodiment of the present invention is shown and described, simply by way of illustration of the best mode contemplated for carrying out the present invention. As will be realized, the present invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, all without departing from the invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
- Reference is made to the attached drawings, wherein elements having the same reference numeral designations represent like elements throughout, and wherein:
- FIG. 1 illustrates a conventional CMP apparatus.
- FIG. 2 graphically illustrates CMP pad wear gradient.
- FIG. 3A is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 3B is a cross-sectional view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 3C is a cross-sectional view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 4 is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 5 is a top view of a CMP polishing pad according to an embodiment of the present invention.
- FIG. 6 is a flow chart illustrating the methodology of an embodiment of the present invention.
- Conventional methodologies for monitoring CMP polishing pad wear either require destruction of the pad, require accurate placement of the pad and measuring device for accuracy, and/or can be adversely affected by the condition of the pad underlayer. The present invention addresses and solves these problems stemming from conventional techniques, enabling monitoring and control of the CMP process to maintain even polishing over a range of changing process conditions.
- According to embodiments of the present invention, a plurality of strategically located reliefs are provided in the polishing surface of a CMP polishing pad, the reliefs extending either partially or completely through the thickness of the pad. The reliefs may include trenches in the pad that have an upper “lip” at the surface of the pad and a lower “ledge” at the bottom of the relief. In operation, the reliefs are scanned, as by a conventional stylus-type instrument or a conventional contactless displacement sensor such as a laser. When the stylus or laser scans it, the instrument detects one flat surface (the lip) and then detects another flat surface (the ledge), thus enabling the instrument to accurately measure the depth of the relief independent of the position of the pad or the position of the measuring hardware. The reliefs are scanned before the pad is used and then scanned again after use to measure the difference in the depth of the reliefs, thereby indicating pad wear. Such information is then used to monitor total pad wear, and to generate a pad profile and a pad wear profile.
- The present invention provides accurate pad thickness measurements quickly and easily, thereby enabling the pad wear profile to be closely monitored; e.g., measured every 50-100 wafers, in a cost-effective manner. Consequently, process monitoring can be improved by utilizing the present invention in a feedback loop to reduce variation in process quality, to indicate that process changes are required, and to modify conditioning residence times, conditioning load and/or relative conditioning velocity as a function of pad location.
- An embodiment of the present invention is illustrated in FIGS.3A-3C. Referring to FIGS. 3A-3C, a plurality of
reliefs 310 are provided in a predetermined pattern in aconventional polishing pad 300 having a thickness t, such as the IC1000 polishing pad available from Rodel Corporation of Phoenix, Ariz.Reliefs 310 extend partially throughpad 300 to a depth d as shown in FIG. 3B or, in an alternative embodiment of the present invention shown in FIG. 3C,reliefs 320 extend completely throughpad 300, exposingunderlayer 330.Reliefs machining pad 300, or are integrally molded withpad 300. Additionally, through-hole type reliefs 320 can be formed by punching or stamping.Reliefs Reliefs pad 300 has a thickness t of about 50 mil, rectangular orsquare reliefs 310 are formed to a depth d of about 30 mil, width w of about 20 mil to about 500 mil, and length l of about 20 mil to about 500 mil, and are spaced about 250 mil to about 10,000 mil apart. - The trench-
type reliefs 310 of the embodiment of FIG. 3B can be utilized rather than the through-hole type reliefs 320 of FIG. 3C if a stylus probe is used having a limited range of travel. However, a laser probe can adequately handle deep reliefs and through-hole type reliefs 320. Through-hole reliefs 320 are advantageous in that they enable direct measurement of the physical pad dimension t, although accuracy may be affected by the necessity of measuring to thecompliant underlayer 330 which, as discussed above, is compressible, and may swell due to absorption of liquid. Trench-type reliefs 310 avoid dependence onunderlayer 330 since the measurement of depth d of trench-type reliefs 310 is made from onestable surface 300 a to another stable surface 300 b. - Referring to FIGS. 3A, 4 and5,
reliefs pad reliefs pad - Referring again to FIG. 3A,
reliefs 310 are arranged along a diameter ofpad 300. Thus, the wafer (not shown) “sees” a line ofreliefs 310 when it is being polished, and a pad wear profile as a function of pad position is generated using the methodology of the present invention. FIG. 4 illustrates an alternative embodiment of the present invention, whereinreliefs 410 are provided inpad 400 in a spiral pattern. A wafer being polished bypad 400 sees only onerelief 410 at a time (rather than the line ofreliefs 310 seen by a wafer being polished by pad 300). Thus, the spiral relief pattern distributes pad stress originating fromreliefs 410 across the surface ofpad 400, avoiding stress concentrations that may arise from the line of reliefs ofpad 300. When employing a spiral pattern of reliefs as shown in FIG. 4, the combination of the spiral pattern, rotational speed and wafer sweep can be chosen to avoid having the pattern look like a line to the wafer. - Referring now to FIG. 5, in a further embodiment of the present invention, the pattern of
reliefs 510 is a non-symmetrical pseudo-random spiral distribution. This distribution is typically computer-designed and mapped such that the location of eachrelief 510 is known, and so thatreliefs 510 are advantageously located to accurately measure pad wear and pad wear profile without introducing undesirable stress-inducing symmetry into the system. - The methodology of an embodiment of present invention will now be described with reference to FIGS. 3A, 3B and the flow chart of FIG. 6. At
step 610, the reliefs of a polishing pad (e.g.,reliefs 310 ofpad 300 in FIGS. 3A and 3B) are scanned, as by a laser interferometer or LVDT stylus, to measure the depth of the reliefs, such as the depth d ofrelief 310.Polishing pad 300 is then used to polish a predetermined number of wafers atstep 620; for example, 50 wafers. Next, atstep 630,reliefs 310 are scanned again by the laser or LVDT stylus to measure their depth d. The depth measurements ofsteps step 650 to generate a pad wear profile. The calculations ofsteps - If the pad wear is unacceptably fast or if the profile is unacceptably non-flat, at
step 660 the process parameters are changed for the next group of wafers to be processed bypad 300, as desired by the user. For example, to improve the flatness of the pad wear profile, one or more of the following variables is typically adjusted: - conditioning residence time, load and/or relative velocity as a function of pad location or pad thickness
- residence time of the wafer over different parts of pad300 (e.g., more or less time at the edge of pad 300)
- load (pressure) on the wafer vs. location on
pad 300 or thickness ofpad 300 - rotational velocity of the wafer vs. location on
pad 300 or thickness of pad - sweep range of wafer vs. thickness of
pad 300 or location on pad 300 (e.g., if a problem occurs at the edge ofpad 300, avoid polishing with edge) - retaining ring pressure vs. pad thickness
- Thus, the present invention provides a feedback loop to monitor pad flatness, platen flatness, consistency of pad to platen adhesion and the presence of air bubbles between pad and platen, and improve the quality of the CMP process.
- The present invention is also useful for controlling pad flatness to attain an ideal pad wear gradient after process parameters that affect pad wear have been changed. For example, pad wear and pad wear profile can be measured by the techniques of FIG. 6 when a different slurry, conditioner or pad is introduced, or after a mechanical change to the appaatus such as a different size pad or wafer.
- Still further, the present invention extends the useful life of a polishing pad after pad wear problems have occurred. For example, since the pad wear rates and wear profile is determinable by the present invention, excessively worn areas of the pad can be avoided while “good” areas are used for polishing, rather than discarding the pad. Alternatively, the above-discussed variables can be adjusted based on the pad wear profile or wear rate to maintain the polishing rate at a problematic portion of the pad.
- The present invention is applicable to the manufacture of various types of semiconductor devices, particularly high-density semiconductor devices having a design rule of about 0.18μ and under.
- The present invention can be practiced by employing conventional materials, methodology and equipment. Accordingly, the details of such materials, equipment and methodology are not set forth herein in detail. In the previous descriptions, numerous specific details are set forth, such as specific materials, structures, chemicals, processes, etc., in order to provide a thorough understanding of the present invention. However, it should be recognized that the present invention can be practiced without resorting to the details specifically set forth. In other instances, well known processing structures have not been described in detail, in order not to unnecessarily obscure the present invention.
- Various embodiments of the present invention and but a few examples of its versatility are shown and described in the present disclosure. It is to be understood that the present invention is capable of use in various other combinations and environments and is capable of changes or modifications within the scope of the inventive concept as expressed herein.
Claims (20)
1. A chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad, wherein the reliefs are disposed in a predetermined pattern such that the wear of the pad is determinable as a function of pad radius.
2. The pad of claim 1 , wherein the reliefs extend partially through a thickness of the pad.
3. The pad of claim 2 , wherein the pad is round.
4. The pad of claim 3 , wherein the plurality of reliefs in have a rectangular, square, triangular or round shape.
5. A chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad, wherein the reliefs comprise through-holes in the pad.
6. The pad of claim 5 , wherein the reliefs are distributed in a predetermined pattern to enable monitoring the pad wear as a function of pad radius.
7. The pad of claim 6 , wherein the predetermined pattern is configured to enable monitoring of the pad wear to discern whether two or more regions of the pad are wearing at different rates.
8. The pad of claim 6 , wherein at least some of the reliefs are individually monitored to establish a wear pattern specific to a pattern of at least some of the reliefs.
9. The pad of claim 6 , wherein the pad is round.
10. The pad of claim 9 , wherein the plurality of reliefs in have a rectangular, square, triangular or round shape.
11. A chemical mechanical polishing pad having a plurality of reliefs disposed in a predetermined pattern thereon, wherein the predetermined pattern is configured to indicate the wear of at least one region of the pad with respect to the pad radius.
12. The pad of claim 11 , wherein the predetermined pattern is configured to enable monitoring of the pad wear to discern whether two or more regions of the pad are wearing at different rates.
13. The pad of claim 11 , wherein the predetermined pattern is selected from inline, spiral, non-symmetrical pseudo-random, and combinations thereof.
14. The pad of claim 13 , wherein the pad is round.
15. The pad of claim 14 , wherein the plurality of reliefs in have a rectangular, square, triangular or round shape.
16. A chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad, wherein the reliefs have a rectangular, square, triangular or round shape.
17. The pad of claim 16 , wherein the pad is round.
18. A chemical mechanical polishing pad having a plurality of reliefs in a main polishing surface for determining wear of the pad, wherein the reliefs comprise through-holes in the pad or extend partially through a thickness of the pad.
19. The pad of claim 18 , wherein the pad is round.
20. The pad of claim 19 , wherein the plurality of reliefs in have a rectangular, square, triangular or round shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/640,209 US20040033760A1 (en) | 2000-04-07 | 2003-08-12 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US19552300P | 2000-04-07 | 2000-04-07 | |
US09/826,419 US6616513B1 (en) | 2000-04-07 | 2001-04-05 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
US10/640,209 US20040033760A1 (en) | 2000-04-07 | 2003-08-12 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
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US09/826,419 Continuation US6616513B1 (en) | 2000-04-07 | 2001-04-05 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
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US20040033760A1 true US20040033760A1 (en) | 2004-02-19 |
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US09/826,419 Expired - Lifetime US6616513B1 (en) | 2000-04-07 | 2001-04-05 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
US10/640,209 Abandoned US20040033760A1 (en) | 2000-04-07 | 2003-08-12 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
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US09/826,419 Expired - Lifetime US6616513B1 (en) | 2000-04-07 | 2001-04-05 | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
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US20030037090A1 (en) * | 2001-08-14 | 2003-02-20 | Koh Horne L. | Tool services layer for providing tool service functions in conjunction with tool functions |
US6984198B2 (en) * | 2001-08-14 | 2006-01-10 | Applied Materials, Inc. | Experiment management system, method and medium |
JP3843933B2 (en) * | 2002-02-07 | 2006-11-08 | ソニー株式会社 | Polishing pad, polishing apparatus and polishing method |
US7272459B2 (en) | 2002-11-15 | 2007-09-18 | Applied Materials, Inc. | Method, system and medium for controlling manufacture process having multivariate input parameters |
US6872132B2 (en) * | 2003-03-03 | 2005-03-29 | Micron Technology, Inc. | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces |
TWI229381B (en) * | 2003-12-11 | 2005-03-11 | Promos Technologies Inc | Chemical mechanical polishing apparatus, profile control system and conditioning method of polishing pad thereof |
JP2005262406A (en) * | 2004-03-19 | 2005-09-29 | Toshiba Corp | Polishing apparatus, and method for manufacturing semiconductor device |
US7198546B2 (en) * | 2004-06-29 | 2007-04-03 | Lsi Logic Corporation | Method to monitor pad wear in CMP processing |
US7407433B2 (en) * | 2005-11-03 | 2008-08-05 | Applied Materials, Inc. | Pad characterization tool |
US20100173567A1 (en) * | 2006-02-06 | 2010-07-08 | Chien-Min Sung | Methods and Devices for Enhancing Chemical Mechanical Polishing Processes |
US7749050B2 (en) * | 2006-02-06 | 2010-07-06 | Chien-Min Sung | Pad conditioner dresser |
US8142261B1 (en) | 2006-11-27 | 2012-03-27 | Chien-Min Sung | Methods for enhancing chemical mechanical polishing pad processes |
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US11794305B2 (en) | 2020-09-28 | 2023-10-24 | Applied Materials, Inc. | Platen surface modification and high-performance pad conditioning to improve CMP performance |
Citations (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2073167A (en) * | 1936-10-23 | 1937-03-09 | American Floor Surfacing Mach | Surface cleaning means |
US5014468A (en) * | 1989-05-05 | 1991-05-14 | Norton Company | Patterned coated abrasive for fine surface finishing |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5022191A (en) * | 1988-11-22 | 1991-06-11 | Lam-Plan S.A. | Polishing plate |
US5152917A (en) * | 1991-02-06 | 1992-10-06 | Minnesota Mining And Manufacturing Company | Structured abrasive article |
US5243790A (en) * | 1992-06-25 | 1993-09-14 | Abrasifs Vega, Inc. | Abrasive member |
US5437754A (en) * | 1992-01-13 | 1995-08-01 | Minnesota Mining And Manufacturing Company | Abrasive article having precise lateral spacing between abrasive composite members |
US5453312A (en) * | 1993-10-29 | 1995-09-26 | Minnesota Mining And Manufacturing Company | Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface |
US5454844A (en) * | 1993-10-29 | 1995-10-03 | Minnesota Mining And Manufacturing Company | Abrasive article, a process of making same, and a method of using same to finish a workpiece surface |
US5456627A (en) * | 1993-12-20 | 1995-10-10 | Westech Systems, Inc. | Conditioner for a polishing pad and method therefor |
US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
US5486129A (en) * | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5516400A (en) * | 1992-07-10 | 1996-05-14 | Lsi Logic Corporation | Techniques for assembling polishing pads for chemical-mechanical polishing of silicon wafers |
US5527424A (en) * | 1995-01-30 | 1996-06-18 | Motorola, Inc. | Preconditioner for a polishing pad and method for using the same |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
US5578362A (en) * | 1992-08-19 | 1996-11-26 | Rodel, Inc. | Polymeric polishing pad containing hollow polymeric microelements |
US5584789A (en) * | 1994-09-06 | 1996-12-17 | Sealright Co., Inc. | Method and apparatus for forming non-round containers |
US5595527A (en) * | 1994-07-27 | 1997-01-21 | Texas Instruments Incorporated | Application of semiconductor IC fabrication techniques to the manufacturing of a conditioning head for pad conditioning during chemical-mechanical polish |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5618447A (en) * | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US5628862A (en) * | 1993-12-16 | 1997-05-13 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5645469A (en) * | 1996-09-06 | 1997-07-08 | Advanced Micro Devices, Inc. | Polishing pad with radially extending tapered channels |
US5655951A (en) * | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5681217A (en) * | 1994-02-22 | 1997-10-28 | Minnesota Mining And Manufacturing Company | Abrasive article, a method of making same, and a method of using same for finishing |
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
US5743784A (en) * | 1995-12-19 | 1998-04-28 | Applied Materials, Inc. | Apparatus and method to determine the coefficient of friction of a chemical mechanical polishing pad during a pad conditioning process and to use it to control the process |
US5778481A (en) * | 1996-02-15 | 1998-07-14 | International Business Machines Corporation | Silicon wafer cleaning and polishing pads |
US5779521A (en) * | 1995-03-03 | 1998-07-14 | Sony Corporation | Method and apparatus for chemical/mechanical polishing |
US5787595A (en) * | 1996-08-09 | 1998-08-04 | Memc Electric Materials, Inc. | Method and apparatus for controlling flatness of polished semiconductor wafer |
US5804507A (en) * | 1995-10-27 | 1998-09-08 | Applied Materials, Inc. | Radially oscillating carousel processing system for chemical mechanical polishing |
US5810964A (en) * | 1995-12-06 | 1998-09-22 | Nec Corporation | Chemical mechanical polishing device for a semiconductor wafer |
US5823855A (en) * | 1996-01-22 | 1998-10-20 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5833519A (en) * | 1996-08-06 | 1998-11-10 | Micron Technology, Inc. | Method and apparatus for mechanical polishing |
US5857899A (en) * | 1997-04-04 | 1999-01-12 | Ontrak Systems, Inc. | Wafer polishing head with pad dressing element |
US5868605A (en) * | 1995-06-02 | 1999-02-09 | Speedfam Corporation | In-situ polishing pad flatness control |
US5875559A (en) * | 1995-10-27 | 1999-03-02 | Applied Materials, Inc. | Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system |
US5879226A (en) * | 1996-05-21 | 1999-03-09 | Micron Technology, Inc. | Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5888121A (en) * | 1997-09-23 | 1999-03-30 | Lsi Logic Corporation | Controlling groove dimensions for enhanced slurry flow |
US5899745A (en) * | 1997-07-03 | 1999-05-04 | Motorola, Inc. | Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor |
US5899800A (en) * | 1993-12-27 | 1999-05-04 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with orbital polishing |
US5904609A (en) * | 1995-04-26 | 1999-05-18 | Fujitsu Limited | Polishing apparatus and polishing method |
US5904615A (en) * | 1997-07-18 | 1999-05-18 | Hankook Machine Tools Co., Ltd. | Pad conditioner for chemical mechanical polishing apparatus |
US5906754A (en) * | 1995-10-23 | 1999-05-25 | Texas Instruments Incorporated | Apparatus integrating pad conditioner with a wafer carrier for chemical-mechanical polishing applications |
US5908530A (en) * | 1995-05-18 | 1999-06-01 | Obsidian, Inc. | Apparatus for chemical mechanical polishing |
US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US5916010A (en) * | 1997-10-30 | 1999-06-29 | International Business Machines Corporation | CMP pad maintenance apparatus and method |
US5916012A (en) * | 1996-04-26 | 1999-06-29 | Lam Research Corporation | Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
US5941762A (en) * | 1998-01-07 | 1999-08-24 | Ravkin; Michael A. | Method and apparatus for improved conditioning of polishing pads |
US5944583A (en) * | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
US5951380A (en) * | 1996-12-24 | 1999-09-14 | Lg Semicon Co.,Ltd. | Polishing apparatus for a semiconductor wafer |
US5951370A (en) * | 1997-10-02 | 1999-09-14 | Speedfam-Ipec Corp. | Method and apparatus for monitoring and controlling the flatness of a polishing pad |
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5961372A (en) * | 1995-12-05 | 1999-10-05 | Applied Materials, Inc. | Substrate belt polisher |
US5975994A (en) * | 1997-06-11 | 1999-11-02 | Micron Technology, Inc. | Method and apparatus for selectively conditioning a polished pad used in planarizng substrates |
US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
US5990010A (en) * | 1997-04-08 | 1999-11-23 | Lsi Logic Corporation | Pre-conditioning polishing pads for chemical-mechanical polishing |
US6012968A (en) * | 1998-07-31 | 2000-01-11 | International Business Machines Corporation | Apparatus for and method of conditioning chemical mechanical polishing pad during workpiece polishing cycle |
US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
US6022264A (en) * | 1997-02-10 | 2000-02-08 | Rodel Inc. | Polishing pad and methods relating thereto |
US6059636A (en) * | 1997-07-11 | 2000-05-09 | Tokyo Seimitsu Co., Ltd. | Wafer polishing apparatus |
US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
US6093085A (en) * | 1998-09-08 | 2000-07-25 | Advanced Micro Devices, Inc. | Apparatuses and methods for polishing semiconductor wafers |
US6106661A (en) * | 1998-05-08 | 2000-08-22 | Advanced Micro Devices, Inc. | Polishing pad having a wear level indicator and system using the same |
US6106382A (en) * | 1996-06-27 | 2000-08-22 | 3M Innovative Properties Company | Abrasive product for dressing |
US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
US6123607A (en) * | 1998-01-07 | 2000-09-26 | Ravkin; Michael A. | Method and apparatus for improved conditioning of polishing pads |
US6129609A (en) * | 1997-12-18 | 2000-10-10 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method for achieving a wear performance which is as linear as possible and tool having a wear performance which is as linear as possible |
US6168508B1 (en) * | 1997-08-25 | 2001-01-02 | Lsi Logic Corporation | Polishing pad surface for improved process control |
US6186864B1 (en) * | 1997-11-10 | 2001-02-13 | International Business Machines Corporation | Method and apparatus for monitoring polishing pad wear during processing |
US6190236B1 (en) * | 1996-10-16 | 2001-02-20 | Vlsi Technology, Inc. | Method and system for vacuum removal of chemical mechanical polishing by-products |
US6193587B1 (en) * | 1999-10-01 | 2001-02-27 | Taiwan Semicondutor Manufacturing Co., Ltd | Apparatus and method for cleansing a polishing pad |
US6196899B1 (en) * | 1999-06-21 | 2001-03-06 | Micron Technology, Inc. | Polishing apparatus |
US6197692B1 (en) * | 1998-06-09 | 2001-03-06 | Oki Electric Industry Co., Ltd. | Semiconductor wafer planarizing device and method for planarizing a surface of semiconductor wafer by polishing it |
US6213856B1 (en) * | 1998-04-25 | 2001-04-10 | Samsung Electronics Co., Ltd. | Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk |
US6241596B1 (en) * | 2000-01-14 | 2001-06-05 | Applied Materials, Inc. | Method and apparatus for chemical mechanical polishing using a patterned pad |
US6244935B1 (en) * | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US6277015B1 (en) * | 1998-01-27 | 2001-08-21 | Micron Technology, Inc. | Polishing pad and system |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6364749B1 (en) * | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
US6517414B1 (en) * | 2000-03-10 | 2003-02-11 | Appied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
US6645264B2 (en) * | 2000-10-24 | 2003-11-11 | Jsr Corporation | Composition for forming polishing pad, crosslinked body for polishing pad, polishing pad using the same and method for producing thereof |
US6685548B2 (en) * | 2000-06-29 | 2004-02-03 | International Business Machines Corporation | Grooved polishing pads and methods of use |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0861949A (en) | 1994-08-24 | 1996-03-08 | Speedfam Co Ltd | Surface contour measuring device for surface plate and polishing pad |
US5842912A (en) | 1996-07-15 | 1998-12-01 | Speedfam Corporation | Apparatus for conditioning polishing pads utilizing brazed diamond technology |
JP2001512375A (en) | 1997-03-07 | 2001-08-21 | ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー | Abrasive article for providing a transparent surface finish on glass |
US5842910A (en) | 1997-03-10 | 1998-12-01 | International Business Machines Corporation | Off-center grooved polish pad for CMP |
AU6887898A (en) | 1997-04-04 | 1998-10-30 | Obsidian, Inc. | Polishing media magazine for improved polishing |
BR9809311A (en) | 1997-04-30 | 2000-07-04 | Minnesota Mining & Mfg | Process of modifying a tablet surface suitable for the manufacture of a semiconductor device, and, tablet suitable for the manufacture of semiconductors |
US5928394A (en) | 1997-10-30 | 1999-07-27 | Minnesota Mining And Manufacturing Company | Durable abrasive articles with thick abrasive coatings |
US6004196A (en) | 1998-02-27 | 1999-12-21 | Micron Technology, Inc. | Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates |
US6413149B1 (en) | 1998-04-28 | 2002-07-02 | Ebara Corporation | Abrading plate and polishing method using the same |
JP3295888B2 (en) | 1998-04-22 | 2002-06-24 | 株式会社藤森技術研究所 | Polishing dresser for polishing machine of chemical machine polisher |
US6331137B1 (en) * | 1998-08-28 | 2001-12-18 | Advanced Micro Devices, Inc | Polishing pad having open area which varies with distance from initial pad surface |
-
2001
- 2001-04-05 US US09/826,419 patent/US6616513B1/en not_active Expired - Lifetime
-
2003
- 2003-08-12 US US10/640,209 patent/US20040033760A1/en not_active Abandoned
Patent Citations (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2073167A (en) * | 1936-10-23 | 1937-03-09 | American Floor Surfacing Mach | Surface cleaning means |
US5022191A (en) * | 1988-11-22 | 1991-06-11 | Lam-Plan S.A. | Polishing plate |
US5014468A (en) * | 1989-05-05 | 1991-05-14 | Norton Company | Patterned coated abrasive for fine surface finishing |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5297364A (en) * | 1990-01-22 | 1994-03-29 | Micron Technology, Inc. | Polishing pad with controlled abrasion rate |
US5152917A (en) * | 1991-02-06 | 1992-10-06 | Minnesota Mining And Manufacturing Company | Structured abrasive article |
US5152917B1 (en) * | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
US5472371A (en) * | 1991-07-09 | 1995-12-05 | Hitachi, Ltd. | Method and apparatus for truing and trued grinding tool |
US5437754A (en) * | 1992-01-13 | 1995-08-01 | Minnesota Mining And Manufacturing Company | Abrasive article having precise lateral spacing between abrasive composite members |
US5820450A (en) * | 1992-01-13 | 1998-10-13 | Minnesota Mining & Manufacturing Company | Abrasive article having precise lateral spacing between abrasive composite members |
US5243790A (en) * | 1992-06-25 | 1993-09-14 | Abrasifs Vega, Inc. | Abrasive member |
US5516400A (en) * | 1992-07-10 | 1996-05-14 | Lsi Logic Corporation | Techniques for assembling polishing pads for chemical-mechanical polishing of silicon wafers |
US5578362A (en) * | 1992-08-19 | 1996-11-26 | Rodel, Inc. | Polymeric polishing pad containing hollow polymeric microelements |
US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
US5486129A (en) * | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5454844A (en) * | 1993-10-29 | 1995-10-03 | Minnesota Mining And Manufacturing Company | Abrasive article, a process of making same, and a method of using same to finish a workpiece surface |
US5453312A (en) * | 1993-10-29 | 1995-09-26 | Minnesota Mining And Manufacturing Company | Abrasive article, a process for its manufacture, and a method of using it to reduce a workpiece surface |
US5628862A (en) * | 1993-12-16 | 1997-05-13 | Motorola, Inc. | Polishing pad for chemical-mechanical polishing of a semiconductor substrate |
US5456627A (en) * | 1993-12-20 | 1995-10-10 | Westech Systems, Inc. | Conditioner for a polishing pad and method therefor |
US5899800A (en) * | 1993-12-27 | 1999-05-04 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with orbital polishing |
US5681217A (en) * | 1994-02-22 | 1997-10-28 | Minnesota Mining And Manufacturing Company | Abrasive article, a method of making same, and a method of using same for finishing |
US5489233A (en) * | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5595527A (en) * | 1994-07-27 | 1997-01-21 | Texas Instruments Incorporated | Application of semiconductor IC fabrication techniques to the manufacturing of a conditioning head for pad conditioning during chemical-mechanical polish |
US5584789A (en) * | 1994-09-06 | 1996-12-17 | Sealright Co., Inc. | Method and apparatus for forming non-round containers |
US5527424A (en) * | 1995-01-30 | 1996-06-18 | Motorola, Inc. | Preconditioner for a polishing pad and method for using the same |
US5779521A (en) * | 1995-03-03 | 1998-07-14 | Sony Corporation | Method and apparatus for chemical/mechanical polishing |
US5904609A (en) * | 1995-04-26 | 1999-05-18 | Fujitsu Limited | Polishing apparatus and polishing method |
US5985090A (en) * | 1995-05-17 | 1999-11-16 | Ebara Corporation | Polishing cloth and polishing apparatus having such polishing cloth |
US5908530A (en) * | 1995-05-18 | 1999-06-01 | Obsidian, Inc. | Apparatus for chemical mechanical polishing |
US5868605A (en) * | 1995-06-02 | 1999-02-09 | Speedfam Corporation | In-situ polishing pad flatness control |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
US5605760A (en) * | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5655951A (en) * | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5906754A (en) * | 1995-10-23 | 1999-05-25 | Texas Instruments Incorporated | Apparatus integrating pad conditioner with a wafer carrier for chemical-mechanical polishing applications |
US6126517A (en) * | 1995-10-27 | 2000-10-03 | Applied Materials, Inc. | System for chemical mechanical polishing having multiple polishing stations |
US5804507A (en) * | 1995-10-27 | 1998-09-08 | Applied Materials, Inc. | Radially oscillating carousel processing system for chemical mechanical polishing |
US6080046A (en) * | 1995-10-27 | 2000-06-27 | Applied Materials, Inc. | Underwater wafer storage and wafer picking for chemical mechanical polishing |
US6086457A (en) * | 1995-10-27 | 2000-07-11 | Applied Materials, Inc. | Washing transfer station in a system for chemical mechanical polishing |
US5875559A (en) * | 1995-10-27 | 1999-03-02 | Applied Materials, Inc. | Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system |
US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
US5961372A (en) * | 1995-12-05 | 1999-10-05 | Applied Materials, Inc. | Substrate belt polisher |
US5810964A (en) * | 1995-12-06 | 1998-09-22 | Nec Corporation | Chemical mechanical polishing device for a semiconductor wafer |
US5743784A (en) * | 1995-12-19 | 1998-04-28 | Applied Materials, Inc. | Apparatus and method to determine the coefficient of friction of a chemical mechanical polishing pad during a pad conditioning process and to use it to control the process |
US5823855A (en) * | 1996-01-22 | 1998-10-20 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5879222A (en) * | 1996-01-22 | 1999-03-09 | Micron Technology, Inc. | Abrasive polishing pad with covalently bonded abrasive particles |
US5618447A (en) * | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US5778481A (en) * | 1996-02-15 | 1998-07-14 | International Business Machines Corporation | Silicon wafer cleaning and polishing pads |
US5690540A (en) * | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5916012A (en) * | 1996-04-26 | 1999-06-29 | Lam Research Corporation | Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher |
US5879226A (en) * | 1996-05-21 | 1999-03-09 | Micron Technology, Inc. | Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
US6106382A (en) * | 1996-06-27 | 2000-08-22 | 3M Innovative Properties Company | Abrasive product for dressing |
US5833519A (en) * | 1996-08-06 | 1998-11-10 | Micron Technology, Inc. | Method and apparatus for mechanical polishing |
US5692950A (en) * | 1996-08-08 | 1997-12-02 | Minnesota Mining And Manufacturing Company | Abrasive construction for semiconductor wafer modification |
US5787595A (en) * | 1996-08-09 | 1998-08-04 | Memc Electric Materials, Inc. | Method and apparatus for controlling flatness of polished semiconductor wafer |
US5645469A (en) * | 1996-09-06 | 1997-07-08 | Advanced Micro Devices, Inc. | Polishing pad with radially extending tapered channels |
US6190236B1 (en) * | 1996-10-16 | 2001-02-20 | Vlsi Technology, Inc. | Method and system for vacuum removal of chemical mechanical polishing by-products |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5951380A (en) * | 1996-12-24 | 1999-09-14 | Lg Semicon Co.,Ltd. | Polishing apparatus for a semiconductor wafer |
US6022264A (en) * | 1997-02-10 | 2000-02-08 | Rodel Inc. | Polishing pad and methods relating thereto |
US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
US5944583A (en) * | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
US5857899A (en) * | 1997-04-04 | 1999-01-12 | Ontrak Systems, Inc. | Wafer polishing head with pad dressing element |
US5990010A (en) * | 1997-04-08 | 1999-11-23 | Lsi Logic Corporation | Pre-conditioning polishing pads for chemical-mechanical polishing |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6645061B1 (en) * | 1997-05-15 | 2003-11-11 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in chemical mechanical polishing |
US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US5984769A (en) * | 1997-05-15 | 1999-11-16 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US5975994A (en) * | 1997-06-11 | 1999-11-02 | Micron Technology, Inc. | Method and apparatus for selectively conditioning a polished pad used in planarizng substrates |
US5899745A (en) * | 1997-07-03 | 1999-05-04 | Motorola, Inc. | Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor |
US6059636A (en) * | 1997-07-11 | 2000-05-09 | Tokyo Seimitsu Co., Ltd. | Wafer polishing apparatus |
US5904615A (en) * | 1997-07-18 | 1999-05-18 | Hankook Machine Tools Co., Ltd. | Pad conditioner for chemical mechanical polishing apparatus |
US5913713A (en) * | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US6168508B1 (en) * | 1997-08-25 | 2001-01-02 | Lsi Logic Corporation | Polishing pad surface for improved process control |
US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
US5888121A (en) * | 1997-09-23 | 1999-03-30 | Lsi Logic Corporation | Controlling groove dimensions for enhanced slurry flow |
US5951370A (en) * | 1997-10-02 | 1999-09-14 | Speedfam-Ipec Corp. | Method and apparatus for monitoring and controlling the flatness of a polishing pad |
US5916010A (en) * | 1997-10-30 | 1999-06-29 | International Business Machines Corporation | CMP pad maintenance apparatus and method |
US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
US6186864B1 (en) * | 1997-11-10 | 2001-02-13 | International Business Machines Corporation | Method and apparatus for monitoring polishing pad wear during processing |
US6129609A (en) * | 1997-12-18 | 2000-10-10 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag | Method for achieving a wear performance which is as linear as possible and tool having a wear performance which is as linear as possible |
US6123607A (en) * | 1998-01-07 | 2000-09-26 | Ravkin; Michael A. | Method and apparatus for improved conditioning of polishing pads |
US5941762A (en) * | 1998-01-07 | 1999-08-24 | Ravkin; Michael A. | Method and apparatus for improved conditioning of polishing pads |
US6277015B1 (en) * | 1998-01-27 | 2001-08-21 | Micron Technology, Inc. | Polishing pad and system |
US6213856B1 (en) * | 1998-04-25 | 2001-04-10 | Samsung Electronics Co., Ltd. | Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk |
US6106661A (en) * | 1998-05-08 | 2000-08-22 | Advanced Micro Devices, Inc. | Polishing pad having a wear level indicator and system using the same |
US6197692B1 (en) * | 1998-06-09 | 2001-03-06 | Oki Electric Industry Co., Ltd. | Semiconductor wafer planarizing device and method for planarizing a surface of semiconductor wafer by polishing it |
US6012968A (en) * | 1998-07-31 | 2000-01-11 | International Business Machines Corporation | Apparatus for and method of conditioning chemical mechanical polishing pad during workpiece polishing cycle |
US6093085A (en) * | 1998-09-08 | 2000-07-25 | Advanced Micro Devices, Inc. | Apparatuses and methods for polishing semiconductor wafers |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6244935B1 (en) * | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
US6196899B1 (en) * | 1999-06-21 | 2001-03-06 | Micron Technology, Inc. | Polishing apparatus |
US6364749B1 (en) * | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
US6193587B1 (en) * | 1999-10-01 | 2001-02-27 | Taiwan Semicondutor Manufacturing Co., Ltd | Apparatus and method for cleansing a polishing pad |
US20020068516A1 (en) * | 1999-12-13 | 2002-06-06 | Applied Materials, Inc | Apparatus and method for controlled delivery of slurry to a region of a polishing device |
US6241596B1 (en) * | 2000-01-14 | 2001-06-05 | Applied Materials, Inc. | Method and apparatus for chemical mechanical polishing using a patterned pad |
US6517414B1 (en) * | 2000-03-10 | 2003-02-11 | Appied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
US6685548B2 (en) * | 2000-06-29 | 2004-02-03 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US6645264B2 (en) * | 2000-10-24 | 2003-11-11 | Jsr Corporation | Composition for forming polishing pad, crosslinked body for polishing pad, polishing pad using the same and method for producing thereof |
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