US20040207063A1 - Semiconductor component in a wafer assembly - Google Patents
Semiconductor component in a wafer assembly Download PDFInfo
- Publication number
- US20040207063A1 US20040207063A1 US10/845,848 US84584804A US2004207063A1 US 20040207063 A1 US20040207063 A1 US 20040207063A1 US 84584804 A US84584804 A US 84584804A US 2004207063 A1 US2004207063 A1 US 2004207063A1
- Authority
- US
- United States
- Prior art keywords
- frame
- holder
- wafer
- semiconductor component
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Definitions
- the invention also relates to a method for fabricating semiconductor components in a wafer assembly of this type.
- the individual components together with a frame and a holder which connects the component to the frame, are produced from a single silicon wafer.
- the holder comprises a bar which extends transversely across the component and is fixed to the frame on both sides. These bars, the only purpose of which is to fix the components to the frame, are fabricated by photolithographic patterning of the wafer front surface with subsequent dry or wet chemical etching processes for shaping.
- the opening up of the components and of the frame i.e. the separation of the components from the frame, is effected by photolithographic patterning of the wafer front surface and/or the wafer back surface with subsequent dry or wet chemical etching processes for shaping.
- the component itself is then broken out of the frame by applying pressure to the component until the bar breaks.
- the bar may also be broken by the application of a torsional load by rotating the component out of the wafer plane.
- the bars are fabricated from the wafer front surface, so that all the fabrication and machining processes carried out on the semiconductor component have to be adapted to the fabrication process used for the bars. Consequently, there is a considerable interdependency between fabrication of the bars and processing of the semiconductor component. There are generally no crystallographically preferred breaking edges, since these require additional process steps. Therefore, during the breaking-out operation, there are no reproducible broken edges formed on the bars, or the bars may splinter when the semiconductor component is broken out, and these splinters may cause damage to the semiconductor component.
- a further drawback is that the thickness of the bars usually has to be defined by time-controlled etching during the opening up of the semiconductor components.
- the present invention is therefore based on the object of proposing a possible way of eliminating the above-mentioned drawbacks.
- this object is achieved by the semiconductor components in a wafer assembly in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer, wherein the holder on one side connects the respective component to the frame and has a desired breaking point and by a method for fabricating semiconductor components having semiconductor components which are connected to a frame by holder means and are formed from the same silicon wafer, comprising the following steps: photolithographic patterning of the wafer back surface with a holder on one side, wherein the holder connects the semiconductor component to the frame; producing a desired breaking point on the holder by means of an etching operation between the frame and the semiconductor component; and opening up the semiconductor component and the frame by photolithographic patterning of the wafer front surface or back surface with subsequent chemical etching for shaping.
- the semiconductor components in a wafer assembly have a holder which connects the respective component to the frame on one side and has a desired breaking point.
- this desired breaking point may be designed in various ways in the form of a thinning of the material in the region of the holder.
- the desired breaking point is advantageously formed by a groove between the frame and the component, which is preferably of V-shaped design.
- the surfaces of the V-groove form (111) crystal planes According to the method, a single-sided holder is produced, which holder in each case connects the component to the frame, by photolithographic patterning of the wafer back surface with subsequent etching of a groove in a region in which the frame has a thickened portion.
- the opening up of the component and of the frame is effected by photolithographic patterning of the wafer front surface and/or back surface with subsequent dry or wet chemical etching processes for shaping. If the process sequence is selected in a suitable way, the opening-up operation may take place at the same time as the fabrication of the holder.
- the production of the desired breaking point may in principle be effected by means of a known etching operation, in which, according to a preferred configuration of the method, the V-groove is produced by wet chemical anisotropic etching.
- the holder described above it is also conceivable for the holder described above to be provided on a plurality of sides, for example on both sides of the semiconductor component in accordance with the prior art, but in this case the above-described advantages relating to the breaking out of the semiconductor component no longer apply in the manner which has been described above, and consequently the semiconductor component may once again be damaged.
- the method provides an inexpensive way, which entails reduced scrap, of fabricating semiconductor components in a wafer assembly.
- FIG. 1 shows a plan view of a semiconductor component in the. wafer assembly in accordance with the prior art
- FIG. 2 shows a plan view of a semiconductor component in the wafer assembly in accordance with the invention
- FIG. 3 shows an exemplary embodiment for fabrication of the holder of a semiconductor component in the wafer assembly in accordance with the invention, including the individual process steps required for this purpose.
- FIG. 1 shows part of a silicon wafer (not shown) having a frame 1 , in which the semiconductor component 2 is secured.
- the semiconductor component 2 is connected to the frame by means of a bar 3 . It can be seen from the enlarged view that the bar 3 connects the frame 1 and the semiconductor component 2 with a certain gap, i.e. semiconductor component 2 and frame 1 are spaced apart from one another.
- FIG. 2 shows an arrangement corresponding to that shown in FIG. 1, but with the fabrication of the semiconductor component 2 in the frame 1 having taken place using the method according to the invention.
- the semiconductor component 2 is connected on one side by means of a holder 4 .
- the holder 4 comprises a thickened portion 5 of the frame 1 , so that the thickened portion 5 directly adjoins the semiconductor component 2 .
- a V-groove 6 the surfaces of which converge in the silicon in such a way that a residual wall thickness d remains, is arranged between the thickened portion 5 of the holder 4 and the semiconductor component 2 .
- the depth etching is stopped on account of the crystallographic properties of the silicon and the fact that the surfaces form (111) crystal planes. Consequently, the desired breaking point can be produced in a defined way.
- FIGS. 3A to 3 E explain the individual process steps involved in the fabrication of a holder for semiconductor components in the wafer assembly in accordance with the invention.
- the processing of the component from the front surface has already been completed.
- the opening up of the component may take place together with the fabrication of the holding device. This means that there is no need for additional process steps in order to open up the component.
- FIG. 3A shows a (100) silicon wafer 11 , on the front surface of which (corresponding to the top side in the illustration) the active surface of the component or sensor is to be located.
- This silicon wafer 11 is covered by a masking layer 12 on both sides.
- This masking layer may, for example, be a silicon oxide layer produced by oxidation or a silicon nitride layer produced by vapor deposition. In general, they must be layers which are suitable to act as an etching mask for anisotropic silicon etching.
- a photosensitive resist 13 is applied to the back surface of the silicon wafer 11 .
- the mask for fabrication of the holder 4 is transferred to this resist 13 by photolithographic patterning.
- a resist 13 is also applied to the wafer front surface 7 , in order to protect the latter, but this resist is not patterned. It is also possible to use a different resist from the resist which was applied to the wafer back surface 8 .
- FIG. 3C shows the next step, in which the mask structure which has been transferred to the photoresist 13 is transferred to the masking layer 12 on the wafer back surface 8 by wet or dry chemical etching techniques. If the masking layer consists of silicon oxide or silicon nitride, this may be achieved by etching in dilute hydrofluoric acid.
- the photoresist 13 is removed again from both sides of the silicon wafer 11 .
- This may, for example, take place in a solvent, such as acetone.
- a subsequent anisotropic silicon etching step which may, for example, take place in dilute, heated potassium hydroxide solution, causes a V-groove 6 to be etched into the silicon wafer 11 .
- the boundary surfaces of this V-groove 6 form (111) crystal planes of the silicon.
- the depth etching stops automatically when the two (111) crystal planes meet. This is illustrated in FIG. 3D.
- FIG. 3E shows a plan view of the back surface of the silicon wafer 11 after the anisotropic silicon etching has ended.
- the shape of the etching mask 12 which is required in order to fabricate a holder 4 in accordance with the invention can also be seen from this figure.
- the etch masking located on the wafer front surface 7 is not illustrated in this figure.
- the etching masks 12 on the front and back surfaces of the silicon wafer 11 are removed again. If these masking layers consist of silicon oxide or silicon nitride, this can once again take place by etching in dilute hydrofluoric acid. If a silicon etching step of sufficient length is carried out, contact between component 2 and frame 1 remains only in the region of the thickened portion 5 of the frame 1 which has been produced. Otherwise, the component 2 is completely separate from the frame 1 (cf. FIG. 2).
Abstract
Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.
Description
- The instant application is a divisional of U.S. patent application Ser. No. 10/178,636 filed on Jun. 21, 2002 which is currently pending.
- Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The invention also relates to a method for fabricating semiconductor components in a wafer assembly of this type.
- During fabrication of semiconductor components from a silicon wafer ((100) silicon wafer), the individual components, together with a frame and a holder which connects the component to the frame, are produced from a single silicon wafer. The holder comprises a bar which extends transversely across the component and is fixed to the frame on both sides. These bars, the only purpose of which is to fix the components to the frame, are fabricated by photolithographic patterning of the wafer front surface with subsequent dry or wet chemical etching processes for shaping. The opening up of the components and of the frame, i.e. the separation of the components from the frame, is effected by photolithographic patterning of the wafer front surface and/or the wafer back surface with subsequent dry or wet chemical etching processes for shaping. The component itself is then broken out of the frame by applying pressure to the component until the bar breaks. Alternatively, the bar may also be broken by the application of a torsional load by rotating the component out of the wafer plane.
- In this method of fabricating the semiconductor component, the bars are fabricated from the wafer front surface, so that all the fabrication and machining processes carried out on the semiconductor component have to be adapted to the fabrication process used for the bars. Consequently, there is a considerable interdependency between fabrication of the bars and processing of the semiconductor component. There are generally no crystallographically preferred breaking edges, since these require additional process steps. Therefore, during the breaking-out operation, there are no reproducible broken edges formed on the bars, or the bars may splinter when the semiconductor component is broken out, and these splinters may cause damage to the semiconductor component. A further drawback is that the thickness of the bars usually has to be defined by time-controlled etching during the opening up of the semiconductor components.
- The present invention is therefore based on the object of proposing a possible way of eliminating the above-mentioned drawbacks.
- According to the invention, this object is achieved by the semiconductor components in a wafer assembly in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer, wherein the holder on one side connects the respective component to the frame and has a desired breaking point and by a method for fabricating semiconductor components having semiconductor components which are connected to a frame by holder means and are formed from the same silicon wafer, comprising the following steps: photolithographic patterning of the wafer back surface with a holder on one side, wherein the holder connects the semiconductor component to the frame; producing a desired breaking point on the holder by means of an etching operation between the frame and the semiconductor component; and opening up the semiconductor component and the frame by photolithographic patterning of the wafer front surface or back surface with subsequent chemical etching for shaping.
- Accordingly, the semiconductor components in a wafer assembly have a holder which connects the respective component to the frame on one side and has a desired breaking point. In principle, this desired breaking point may be designed in various ways in the form of a thinning of the material in the region of the holder. The desired breaking point is advantageously formed by a groove between the frame and the component, which is preferably of V-shaped design. According to a preferred embodiment, the surfaces of the V-groove form (111) crystal planes. According to the method, a single-sided holder is produced, which holder in each case connects the component to the frame, by photolithographic patterning of the wafer back surface with subsequent etching of a groove in a region in which the frame has a thickened portion. The opening up of the component and of the frame is effected by photolithographic patterning of the wafer front surface and/or back surface with subsequent dry or wet chemical etching processes for shaping. If the process sequence is selected in a suitable way, the opening-up operation may take place at the same time as the fabrication of the holder.
- The production of the desired breaking point may in principle be effected by means of a known etching operation, in which, according to a preferred configuration of the method, the V-groove is produced by wet chemical anisotropic etching.
- The last of the three method steps mentioned above in connection with the opening up corresponds to the measures which are also employed in the prior art and is generally known. However, the lithographic patterning of the single-sided holder takes place on the wafer back surface. Therefore, the fabrication of the holder is completely independent of the processing of the wafer front surface. The cut edge of the converging crystallographic (111) planes of the V-groove according to a preferred configuration defines a desired breaking edge. The application of pressure to a component leads to the component tilting and therefore to the semiconductor component breaking out of the frame along the desired breaking edge. The result is the formation of a defined broken edge. Splintering of the silicon crystal is considerably reduced if not completely prevented. The risk of the component being damaged when it is being broken out is therefore likewise considerably reduced.
- When the two surfaces of the V-groove converge, the depth etching stops on account of the crystallographic properties of the silicon. Consequently, very simple, time independent control of the thickness of the desired breaking point can be achieved during production.
- In principle, it is also conceivable for the holder described above to be provided on a plurality of sides, for example on both sides of the semiconductor component in accordance with the prior art, but in this case the above-described advantages relating to the breaking out of the semiconductor component no longer apply in the manner which has been described above, and consequently the semiconductor component may once again be damaged.
- The method provides an inexpensive way, which entails reduced scrap, of fabricating semiconductor components in a wafer assembly.
- The invention is explained in more detail below with reference to an exemplary embodiment and in conjunction with the accompanying drawings, in which:
- FIG. 1 shows a plan view of a semiconductor component in the. wafer assembly in accordance with the prior art;
- FIG. 2 shows a plan view of a semiconductor component in the wafer assembly in accordance with the invention, and
- FIG. 3 shows an exemplary embodiment for fabrication of the holder of a semiconductor component in the wafer assembly in accordance with the invention, including the individual process steps required for this purpose.
- FIG. 1 shows part of a silicon wafer (not shown) having a frame1, in which the
semiconductor component 2 is secured. Thesemiconductor component 2 is connected to the frame by means of abar 3. It can be seen from the enlarged view that thebar 3 connects the frame 1 and thesemiconductor component 2 with a certain gap,i.e. semiconductor component 2 and frame 1 are spaced apart from one another. - FIG. 2 shows an arrangement corresponding to that shown in FIG. 1, but with the fabrication of the
semiconductor component 2 in the frame 1 having taken place using the method according to the invention. Thesemiconductor component 2 is connected on one side by means of a holder 4. In this area, the holder 4 comprises a thickened portion 5 of the frame 1, so that the thickened portion 5 directly adjoins thesemiconductor component 2. As can be seen from the enlarged illustration shown in FIG. 2, a V-groove 6, the surfaces of which converge in the silicon in such a way that a residual wall thickness d remains, is arranged between the thickened portion 5 of the holder 4 and thesemiconductor component 2. As has already been mentioned above, the depth etching is stopped on account of the crystallographic properties of the silicon and the fact that the surfaces form (111) crystal planes. Consequently, the desired breaking point can be produced in a defined way. - FIGS. 3A to3E explain the individual process steps involved in the fabrication of a holder for semiconductor components in the wafer assembly in accordance with the invention. In this specific exemplary embodiment, it is assumed that the processing of the component from the front surface has already been completed. In this case, the opening up of the component may take place together with the fabrication of the holding device. This means that there is no need for additional process steps in order to open up the component.
- FIG. 3A shows a (100)
silicon wafer 11, on the front surface of which (corresponding to the top side in the illustration) the active surface of the component or sensor is to be located. Thissilicon wafer 11 is covered by amasking layer 12 on both sides. This masking layer may, for example, be a silicon oxide layer produced by oxidation or a silicon nitride layer produced by vapor deposition. In general, they must be layers which are suitable to act as an etching mask for anisotropic silicon etching. - Then, as illustrated in FIG. 3B, a photosensitive resist13 is applied to the back surface of the
silicon wafer 11. The mask for fabrication of the holder 4 is transferred to this resist 13 by photolithographic patterning. Then, a resist 13 is also applied to thewafer front surface 7, in order to protect the latter, but this resist is not patterned. It is also possible to use a different resist from the resist which was applied to the wafer backsurface 8. - FIG. 3C shows the next step, in which the mask structure which has been transferred to the
photoresist 13 is transferred to themasking layer 12 on the wafer backsurface 8 by wet or dry chemical etching techniques. If the masking layer consists of silicon oxide or silicon nitride, this may be achieved by etching in dilute hydrofluoric acid. - Then, the
photoresist 13 is removed again from both sides of thesilicon wafer 11. This may, for example, take place in a solvent, such as acetone. To completely remove residues of resist, it is then possible for cleaning to take place in a heated mixture of sulfuric acid and hydrogen peroxide. A subsequent anisotropic silicon etching step, which may, for example, take place in dilute, heated potassium hydroxide solution, causes a V-groove 6 to be etched into thesilicon wafer 11. The boundary surfaces of this V-groove 6 form (111) crystal planes of the silicon. The depth etching stops automatically when the two (111) crystal planes meet. This is illustrated in FIG. 3D. - FIG. 3E shows a plan view of the back surface of the
silicon wafer 11 after the anisotropic silicon etching has ended. The shape of theetching mask 12 which is required in order to fabricate a holder 4 in accordance with the invention can also be seen from this figure. The etch masking located on thewafer front surface 7 is not illustrated in this figure. - Finally, the etching masks12 on the front and back surfaces of the
silicon wafer 11 are removed again. If these masking layers consist of silicon oxide or silicon nitride, this can once again take place by etching in dilute hydrofluoric acid. If a silicon etching step of sufficient length is carried out, contact betweencomponent 2 and frame 1 remains only in the region of the thickened portion 5 of the frame 1 which has been produced. Otherwise, thecomponent 2 is completely separate from the frame 1 (cf. FIG. 2). - It is to be understood that the invention is not limited to the illustrations described and shown herein, which are deemed to be merely illustrative of the best modes of carrying out the invention, and which are susceptible of modification of form, size, arrangement of parts and details of operation. The invention rather is intended to encompass all such modifications which are within its spirit and scope as defined by the claims.
Claims (5)
1. A wafer assembly comprises a frame, at least one semiconductor component, holder means for connecting the at least one semiconductor component to the frame wherein the holder means and the semiconductor component are formed of the same material, the holder means has one end connected to the frame and is provided with a desired breaking point.
2. The wafer assembly as claimed in claim 1 , wherein the holder means has a large-area thickened portion connected to the frame and the desired breaking point is formed by a groove between the frame and the semiconductor component.
3. The wafer assembly as claimed in claim 2 , wherein the groove is of V-shaped design.
4. The wafer assembly as claimed in claim 3 , wherein the groove has surfaces which form crystal planes.
5-9. (canceled)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/845,848 US20040207063A1 (en) | 2001-06-22 | 2004-05-14 | Semiconductor component in a wafer assembly |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01115136.2 | 2001-06-22 | ||
EP01115136A EP1270504B1 (en) | 2001-06-22 | 2001-06-22 | Semiconductor device joint to a wafer |
US10/178,636 US6780767B2 (en) | 2001-06-22 | 2002-06-21 | Semiconductor component in a wafer assembly |
US10/845,848 US20040207063A1 (en) | 2001-06-22 | 2004-05-14 | Semiconductor component in a wafer assembly |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/178,636 Division US6780767B2 (en) | 2001-06-22 | 2002-06-21 | Semiconductor component in a wafer assembly |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040207063A1 true US20040207063A1 (en) | 2004-10-21 |
Family
ID=8177787
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/178,636 Expired - Lifetime US6780767B2 (en) | 2001-06-22 | 2002-06-21 | Semiconductor component in a wafer assembly |
US10/845,848 Abandoned US20040207063A1 (en) | 2001-06-22 | 2004-05-14 | Semiconductor component in a wafer assembly |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/178,636 Expired - Lifetime US6780767B2 (en) | 2001-06-22 | 2002-06-21 | Semiconductor component in a wafer assembly |
Country Status (4)
Country | Link |
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US (2) | US6780767B2 (en) |
EP (1) | EP1270504B1 (en) |
JP (1) | JP2003115536A (en) |
DE (1) | DE50102415D1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098708A1 (en) * | 2006-03-14 | 2009-04-16 | Burghartz Joachim N | Method for producing a thin chip comprising an integrated circuit |
JP2017502284A (en) * | 2013-12-20 | 2017-01-19 | ロレックス・ソシエテ・アノニムRolex Sa | Manufacturing method for watch parts |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070072338A1 (en) | 2005-09-26 | 2007-03-29 | Advanced Chip Engineering Technology Inc. | Method for separating package of WLP |
JP2007123330A (en) * | 2005-10-25 | 2007-05-17 | Fujitsu Ltd | Manufacturing method of semiconductor device |
DE102006013419B4 (en) * | 2006-03-14 | 2008-05-29 | Institut Für Mikroelektronik Stuttgart | Method for producing an integrated circuit |
US7884445B2 (en) * | 2006-11-22 | 2011-02-08 | Applied Nanostructures, Inc. | Semiconductor device in wafer assembly |
US8307461B2 (en) | 2011-01-20 | 2012-11-06 | Primenano, Inc. | Fabrication of a microcantilever microwave probe |
US9770771B2 (en) * | 2011-12-22 | 2017-09-26 | Csem Centre Suisse D'electronique Et De Microtechnique Sa-Recherche Et Developpement | Method for freeing a micromechanical part and a micromechanical part comprising sacrificial fasteners |
EP2801830B1 (en) | 2013-05-08 | 2016-11-30 | NanoWorld AG | Wafer with probes for a scanning force microscope |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04102066A (en) * | 1990-08-20 | 1992-04-03 | Mitsubishi Electric Corp | Acceleration sensor and its manufacture |
JPH09320996A (en) * | 1996-03-29 | 1997-12-12 | Denso Corp | Manufacturing method for semiconductor device |
US6448624B1 (en) * | 1996-08-09 | 2002-09-10 | Denso Corporation | Semiconductor acceleration sensor |
JPH11186565A (en) * | 1997-12-25 | 1999-07-09 | Japan Aviation Electron Ind Ltd | Semiconductor acceleration sensor and manufacture thereof |
-
2001
- 2001-06-22 DE DE50102415T patent/DE50102415D1/en not_active Expired - Lifetime
- 2001-06-22 EP EP01115136A patent/EP1270504B1/en not_active Expired - Lifetime
-
2002
- 2002-06-21 US US10/178,636 patent/US6780767B2/en not_active Expired - Lifetime
- 2002-06-24 JP JP2002183019A patent/JP2003115536A/en active Pending
-
2004
- 2004-05-14 US US10/845,848 patent/US20040207063A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098708A1 (en) * | 2006-03-14 | 2009-04-16 | Burghartz Joachim N | Method for producing a thin chip comprising an integrated circuit |
US8466037B2 (en) | 2006-03-14 | 2013-06-18 | Institut Fuer Mikroelektronik Stuttgart | Method for producing a thin chip comprising an integrated circuit |
JP2017502284A (en) * | 2013-12-20 | 2017-01-19 | ロレックス・ソシエテ・アノニムRolex Sa | Manufacturing method for watch parts |
US10209676B2 (en) | 2013-12-20 | 2019-02-19 | Rolex Sa | Method for manufacturing a timepiece component |
US11385596B2 (en) | 2013-12-20 | 2022-07-12 | Rolex Sa | Method for manufacturing a timepiece component |
Also Published As
Publication number | Publication date |
---|---|
EP1270504A1 (en) | 2003-01-02 |
DE50102415D1 (en) | 2004-07-01 |
EP1270504B1 (en) | 2004-05-26 |
JP2003115536A (en) | 2003-04-18 |
US6780767B2 (en) | 2004-08-24 |
US20020197862A1 (en) | 2002-12-26 |
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