US20040214368A1 - Microlens array with improved fill factor - Google Patents
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- US20040214368A1 US20040214368A1 US10/851,090 US85109004A US2004214368A1 US 20040214368 A1 US20040214368 A1 US 20040214368A1 US 85109004 A US85109004 A US 85109004A US 2004214368 A1 US2004214368 A1 US 2004214368A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Definitions
- the present invention relates generally to a microlens array for use in a solid-state image sensor and in particular to a microlens array having an improved fill factor, and a method for producing the same.
- Solid-state image sensors also known as imagers, were developed in the late 1960s and early 1970s primarily for television image acquisition, transmission, and display.
- An imager absorbs incident radiation of a particular wavelength (such as optical photons, x-rays, or the like) and generates an electrical signal corresponding to the absorbed radiation.
- semiconductor-based imagers including charge coupled devices (CCDs), photodiode arrays, charge injection devices (CIDs), hybrid focal plan arrays, and CMOS imagers.
- Current applications of solid-state imagers include cameras, scanners, machine vision systems, vehicle navigation systems, video telephones, computer input devices, surveillance systems, auto focus systems, star trackers, motion detector systems, image stabilization systems and data compression systems for high-definition television.
- These imagers typically consist of an array of pixel cells containing photosensors, where each pixel produces a signal corresponding to the intensity of light impinging on that element when an image is focused on the array. These signals may then be used, for example, to display a corresponding image on a monitor or otherwise used to provide information about the optical image.
- the photosensors are typically phototransistors, photoconductors or photodiodes, where the conductivity of the photosensor or the charge stored in a diffusion corresponds to the intensity of light impinging on the photosensor. The magnitude of the signal produced by each pixel, therefore, is proportional to the amount of light impinging on the photosensor.
- microlens array with an imager array, wherein the microlens array comprises a convex microlens for each pixel.
- the microlenses refract incident radiation from the circuitry region of the pixel to the photosensor region, thereby increasing the amount of light reaching the photosensor and thereby increasing the fill factor of the pixels.
- Other uses of microlens arrays include intensifying illuminating light on the pixels of a nonluminescent display device such as a liquid crystal display device to increase the brightness of the display, forming an image to be printed in a liquid crystal or light emitting diode printer, and as focusing means for coupling a luminescent device or a receptive device to an optical fiber.
- microlens arrays Despite the use of microlens arrays, a large amount of light incident on an imager is not directed onto the photosensor due to the geometry of the microlens array. In particular, light incident on the space between individual lenses (the lens-lens space), and on the edges of the pixel beyond the edges of an individual lens remains uncaptured by the microlens, and never impacts the photosensor. Additionally, the typical practice of forming the microlens array on a separate substrate from the pixel array leads to problems of lens-pixel alignment that results in additional lost light.
- microlens array having an improved fill factor formed on the same substrate as a pixel array.
- a simple method of fabricating a microlens array having an improved fill factor is also needed.
- the present invention provides a microlens array for use in a solid-state imager having a pixel array, wherein each microlens of the microlens array may correspond to a pixel cell of the imager pixel array.
- Each microlens consists of two layers: a lower refractive layer, and an upper insulation layer.
- the refractive layer is formed of transparent material with a suitable refractive index, which may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate.
- the insulation layer is radiation-transparent and assists in capturing light at the edges of the pixel, thereby improving the fill factor of the microlens array.
- Suitable materials for the insulation layer include silicon insulators such as silicon oxide, silicon nitride, or silicon oxynitride that have been formed by a low temperature process. Also provided are methods for forming the microlens array of the present invention.
- FIG. 1 is a side cross-sectional view showing the principal elements of a solid-state imager having a microlens array according to one embodiment of the present invention.
- FIG. 2 is a top view of the microlens array of FIG. 1.
- FIG. 3 is a cross-sectional view of a CMOS imager pixel cell having a microlens constructed in accordance with an embodiment of the present invention.
- FIG. 4 is a representative diagram of the CMOS imager pixel cell of FIG. 3.
- FIG. 5 is a cross-sectional view of a semiconductor wafer undergoing the process of a preferred embodiment of the invention.
- FIG. 6 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 5.
- FIG. 7 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 6.
- FIG. 8 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 7.
- FIG. 9 is an illustration of a computer system having an imager with a microlens array according to the present invention.
- wafer and substrate are to be understood as including silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. Furthermore, when reference is made to a “wafer” or “substrate” in the following description, previous process steps may have been utilized to form regions or junctions in the base semiconductor structure or foundation. In addition, the semiconductor need not be silicon-based, but could be based on silicon-germanium, germanium, or gallium arsenide.
- pixel refers to a picture element unit cell containing a photosensor and transistors for converting electromagnetic radiation to an electrical signal.
- CMOS imager pixel For purposes of illustration, a representative CMOS imager pixel is illustrated in the figures and description herein. However, this is just one example of the type of imagers and pixel cells thereof with which the invention may be used. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
- FIGS. 1 and 2 a solid-state imager 20 containing an embodiment of the microlens array 22 of the present invention is shown in FIGS. 1 and 2.
- the imager 20 comprises a microlens array or light condensing layer 22 formed over a pixel array 26 as part of the same substrate 30 , which may be any of the types of substrate described above.
- the pixel array 26 is comprised of a plurality of pixel sensor cells 28 formed in the substrate, and is covered by a protective layer 24 that acts as a passivation and planarization layer for the imager 20 .
- Protective layer 24 may be a layer of BPSG, PSG, BSG, silicon dioxide, silicon nitride, polyimide, or other well-known light transmissive insulator.
- the microlens array or light condensing layer 22 is formed on the protective layer 24 , and is comprised of a plurality of microlenses 32 .
- the microlens array 22 is formed so that a microlens 32 is formed above each pixel cell 28 .
- the microlens array 22 is formed such that the focal point of the array is centered over the photosensitive elements in each pixel cell 28 .
- the device also includes a spacer layer 25 under the mircolens array 22 .
- spacer layer 25 is adjusted such that the photosensitive element is at a focal point for the light traveling through microlens array 22 .
- the spacer layer 25 may have a thickness of from about 1 ⁇ m to about 20 ⁇ m.
- a color filter, fluorescent material film, or other device for converting the wavelength of incident light may be used with the pixel array 26 by placing the device on top of the protective layer 24 and beneath the microlens array 22 .
- each pixel sensor cell 28 contains a photosensor 34 , which may be a photodiode, photogate, or the like.
- a photogate photosensor 34 is depicted in FIGS. 3 through 4.
- An applied control signal PG is applied to the photogate 34 so that when incident radiation 100 in the form of photons strikes the photosensor 34 the photo-generated electrons accumulate in the doped region 36 under the photosensor 34 .
- a transfer transistor 38 is located next to the photosensor 34 , and has source and drain regions 36 , 40 and a gate stack 42 controlled by a transfer signal TX.
- the drain region 40 is also called a floating diffusion region or a floating diffusion node, and it passes charge received from the photosensor 34 to output transistors 44 , 46 and then to readout circuitry 48 .
- a reset transistor 50 comprised of doped regions 40 , 52 and gate stack 54 is controlled by a reset signal RST which operates to reset the floating diffusion region 40 to a predetermined initial voltage just prior to signal readout.
- the gate stacks 42 , 54 of the pixel cell 28 include a silicon dioxide or silicon nitride insulator 56 on the substrate 30 , which in this example is a p-type substrate, a conductive layer 58 of doped polysilicon, tungsten, or other suitable material over the insulating layer 56 , and an insulating cap layer 60 of, for example, silicon dioxide, silicon nitride, or ONO (oxide-nitride-oxide).
- a silicide layer 59 may be used between the polysilicon layer 58 and the cap 60 , if desired.
- Insulating sidewalls 62 are also formed on the sides of the gate stacks 42 , 54 .
- a field oxide layer 64 around the pixel cell 28 serves to isolate it from other pixel cells in the array.
- a second gate oxide layer 57 may be grown on the silicon substrate and the photogate semi-transparent conductor 66 is patterned. In the case that the photosensor is a photodiode, no second gate oxide layer 57 and no photogate semi-transparent conductor 66 is required. Furthermore, for the case of a photodiode, a transfer gate is optional.
- the microlens array 22 of a preferred embodiment is formed so that a microlens 32 is formed above each pixel cell 28 , as can be seen in FIGS. 3 through 5.
- the microlens 32 has three transparent layers, a refractive layer 70 and an insulation layer 72 and spacer layer 25 .
- the refractive layer 70 is fashioned from transparent material with a suitable refractive index which may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate.
- a suitable refractive index which may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate.
- an optical thermoplastic such as polymethylmethacrylate, polycarbon
- the insulation layer 72 is also transparent, and is made from a silicon insulator such as silicon oxide, silicon nitride, or silicon oxynitride that has been formed by a low temperature process, such as a plasma enhanced chemical vapor deposition process conducted at a temperature within the range of approximately 200 to 400 degrees Celsius.
- a silicon insulator such as silicon oxide, silicon nitride, or silicon oxynitride that has been formed by a low temperature process, such as a plasma enhanced chemical vapor deposition process conducted at a temperature within the range of approximately 200 to 400 degrees Celsius.
- the shape of the microlens 32 as seen from above may be circular, lenticular, ovoid, rectangular, hexagonal or any other suitable shape.
- the microlens 32 operates to refract incident radiation 100 from the circuitry region of the pixel cell 28 to the photosensor region.
- the microlens 32 is a plano-convex lens having a generally semi-circular cross-section.
- Light radiation 100 is typically perpendicularly incident to the pixel cell 28 , and if no microlens were used, light radiation not directed at the photosensor 34 would not ever strike it, i.e., light radiation directed at the reset gate 54 , for example, would strike the reset gate 54 and not the photosensor 34 .
- microlens which because of its convex shape acts to condense or focus incident radiation 100 into a smaller area than that of the microlens 32 , enables light radiation not originally directed at the photosensor 34 to be redirected towards the photosensor 34 .
- light radiation 100 incident on an outer edge of the microlens 32 is refracted as it passes through the microlens towards the optical axis of the microlens 32 , which is positioned over the photosensor 34 , and therefore strikes the photosensor 34 , whereas an unrefracted beam would not strike the photosensor 34 .
- the present invention provides an insulation layer 72 covering the refractive layer 70 , thereby effectively expanding the area of the pixel cell 28 that is covered by a refractive surface, so that a greater proportion of radiation incident on the pixel cell 28 is directed to the photosensor 34 , thereby improving the fill factor of the pixel sensor cell 28 .
- the microlens array 22 can be used in a CMOS imager 20 , as is shown in FIGS. 1, 3 and 4 , or may be used in a CCD imager.
- the microlens array 22 is manufactured through a process described as follows, and illustrated by FIGS. 6 through 9.
- a substrate 30 which may be any of the types of substrates described above, having a pixel array 26 , peripheral circuits, contacts and wiring formed thereon by well-known methods, is provided.
- a protective layer 24 of BPSG, BSG, PSG, silicon dioxide, silicon nitride or the like is formed over the pixel array 26 to passivate it and to provide a planarized surface.
- a spacing layer 25 is formed over the protective layer 24 .
- a lens forming layer 80 is formed on the spacer layer 25 by spin-coating or other suitable means.
- the lens forming layer 80 may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate.
- an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene
- a polyimide such as an epoxy resin
- a photosensitive gelatin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate.
- the lens forming layer 80 is patterned by conventional photolithography, or other suitable means, to form a plurality of lens forming regions 82 .
- each lens forming region 82 overlies a pixel cell 28 , although alternative constructions in which a lens forming region 82 overlies multiple pixel cells 28 are foreseen.
- the shape of the lens forming regions 82 as seen from above may be circular, lenticular, ovoid, rectangular, hexagonal or any other suitable shape.
- the substrate 30 is then treated, by heat treatment or other suitable treatment, to form refractive lenses 70 from the lens forming regions 82 .
- the treatment used to form the refractive lenses 70 depends on the material used to form the lens forming layer 80 . If the material of the lens forming layer 80 may be heat treated, then heat treatment processes such as baking may be used. If the material is extremely photosensitive, then special light exposure techniques may be used, as further described below.
- Heat treatment relies on the use of flowable materials such as optical thermoplastics, polyimides, and thermoset resins, which may be melted at relatively low temperatures to produce a smooth-surfaced lens.
- a typical baking process involves heating the substrate 30 at a temperature of approximately 100 to 350 degrees Celsius for a suitable length of time, such as 30 minutes.
- the lens forming regions 82 melt and surface tension in the resultant liquid results in the formation of a smooth convex lens 70 with a semi-circular cross-section.
- Certain photosensitive materials such as gelatin and radiation curable resins exhibit a phenomenon in which, when selectively exposed to light, unreacted compounds move from the unexposed regions to the exposed regions, resulting in a swelling of the exposed regions. This phenomenon may be used to form refractive lenses 70 from the lens forming regions 82 .
- the lens forming regions 82 are selectively illuminated with light from a mercury lamp or the like through the top or bottom of the substrate, which has been masked with a photomask or other suitable device for creating a lens pattern.
- the illumination time depends on the thickness of the lens forming regions 82 , the degree of parallelism of the light beams, and the intensity of the light used, but should be sufficient to cause the lens forming regions 82 to swell into smooth convex lenses 70 having a generally semi-circular cross-section.
- FIG. 9 shows the next step of the process, in which a transparent insulation layer 72 is formed on the lenses 70 via a low temperature deposition process such as plasma enhanced chemical vapor deposition (CVD).
- the low temperatures are within the range of approximately 200 to 400 degrees Celsius.
- the transparent insulation layer 72 may be formed of a silicon insulator such as silicon oxide, silicon nitride, or silicon oxynitride that is transparent to radiation.
- a CVD process is especially preferred if the transparent insulation layer 72 is formed from silicon oxide, because the CVD process permits the use of tetraethylorthosilicate (TEOS) as the silicon source, as opposed to silane, and therefore results in improved conformal deposition.
- TEOS tetraethylorthosilicate
- the microlens array 22 is essentially complete at this stage, and conventional processing methods may now be performed to package the imager 20 .
- Pixel arrays having the microlens arrays of the present invention, and described with reference to FIGS. 1-9, may be further processed as known in the art to arrive at CMOS, CCD, or other imagers.
- the imager 20 may be combined with a processor, such as a CPU, digital signal processor or microprocessor, in a single integrated circuit, and may be used in a processor system such as the typical processor-based system illustrated generally at 400 in FIG. 10.
- a processor based system is exemplary of a system having digital circuits which could include CMOS or other imager devices.
- such a system could include a computer system, camera system, scanner, machine vision system, vehicle navigation system, video telephone, surveillance system, auto focus system, star tracker system, motion detection system, image stabilization system and data compression system for high-definition television, all of which can utilize the present invention.
- a processor system such as a computer system, for example, generally comprises a central processing unit (CPU) 444 , e.g., a microprocessor, that communicates with an input/output (I/O) device 446 over a bus 452 .
- the imager 20 also communicates with the system over bus 452 .
- the computer system 400 also includes random access memory (RAM) 448 , and, in the case of a computer system may include peripheral devices such as a floppy disk drive 454 and a compact disk (CD) ROM drive 456 which also communicate with CPU 444 over the bus 452 .
- the imager 20 is preferably constructed as an integrated circuit, with or without memory storage, which includes a microlens array 22 having an improved fill factor, as previously described with respect to FIGS. 1 through 9.
- the present invention encompasses a microlens array for use in a solid-state imager such as a CMOS imager or CCD imager.
- the microlens array has an improved fill factor due to the presence of multi-layer lenses having an insulation layer over a refractive layer.
Abstract
A microlens array for use in a solid-state imager having an improved fill factor. The microlens array includes a plurality of microlenses, each consisting of two layers: a lower refractive layer, and an upper insulation layer. The refractive layer is formed of transparent material with a suitable refractive index which may be optical thermoplastic, polyimide, thermoset resin, photosensitive gelatin, or radiation curable resin. The insulation layer is formed of transparent insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. Due to the refraction of light through the insulation layer, more light at the pixel edges is captured by each microlens, thereby improving the fill factor of the microlens array. Also disclosed are methods for forming the microlens array.
Description
- The present invention relates generally to a microlens array for use in a solid-state image sensor and in particular to a microlens array having an improved fill factor, and a method for producing the same.
- Solid-state image sensors, also known as imagers, were developed in the late 1960s and early 1970s primarily for television image acquisition, transmission, and display. An imager absorbs incident radiation of a particular wavelength (such as optical photons, x-rays, or the like) and generates an electrical signal corresponding to the absorbed radiation. There are a number of different types of semiconductor-based imagers, including charge coupled devices (CCDs), photodiode arrays, charge injection devices (CIDs), hybrid focal plan arrays, and CMOS imagers. Current applications of solid-state imagers include cameras, scanners, machine vision systems, vehicle navigation systems, video telephones, computer input devices, surveillance systems, auto focus systems, star trackers, motion detector systems, image stabilization systems and data compression systems for high-definition television.
- These imagers typically consist of an array of pixel cells containing photosensors, where each pixel produces a signal corresponding to the intensity of light impinging on that element when an image is focused on the array. These signals may then be used, for example, to display a corresponding image on a monitor or otherwise used to provide information about the optical image. The photosensors are typically phototransistors, photoconductors or photodiodes, where the conductivity of the photosensor or the charge stored in a diffusion corresponds to the intensity of light impinging on the photosensor. The magnitude of the signal produced by each pixel, therefore, is proportional to the amount of light impinging on the photosensor.
- It is known in the art to use a microlens array with an imager array, wherein the microlens array comprises a convex microlens for each pixel. The microlenses refract incident radiation from the circuitry region of the pixel to the photosensor region, thereby increasing the amount of light reaching the photosensor and thereby increasing the fill factor of the pixels. Other uses of microlens arrays include intensifying illuminating light on the pixels of a nonluminescent display device such as a liquid crystal display device to increase the brightness of the display, forming an image to be printed in a liquid crystal or light emitting diode printer, and as focusing means for coupling a luminescent device or a receptive device to an optical fiber.
- Despite the use of microlens arrays, a large amount of light incident on an imager is not directed onto the photosensor due to the geometry of the microlens array. In particular, light incident on the space between individual lenses (the lens-lens space), and on the edges of the pixel beyond the edges of an individual lens remains uncaptured by the microlens, and never impacts the photosensor. Additionally, the typical practice of forming the microlens array on a separate substrate from the pixel array leads to problems of lens-pixel alignment that results in additional lost light.
- There is needed, therefore, a microlens array having an improved fill factor formed on the same substrate as a pixel array. A simple method of fabricating a microlens array having an improved fill factor is also needed.
- The present invention provides a microlens array for use in a solid-state imager having a pixel array, wherein each microlens of the microlens array may correspond to a pixel cell of the imager pixel array. Each microlens consists of two layers: a lower refractive layer, and an upper insulation layer. The refractive layer is formed of transparent material with a suitable refractive index, which may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate. The insulation layer is radiation-transparent and assists in capturing light at the edges of the pixel, thereby improving the fill factor of the microlens array. Suitable materials for the insulation layer include silicon insulators such as silicon oxide, silicon nitride, or silicon oxynitride that have been formed by a low temperature process. Also provided are methods for forming the microlens array of the present invention.
- Additional advantages and features of the present invention will be apparent from the following detailed description and drawings which illustrate preferred embodiments of the invention.
- FIG. 1 is a side cross-sectional view showing the principal elements of a solid-state imager having a microlens array according to one embodiment of the present invention.
- FIG. 2 is a top view of the microlens array of FIG. 1.
- FIG. 3 is a cross-sectional view of a CMOS imager pixel cell having a microlens constructed in accordance with an embodiment of the present invention.
- FIG. 4 is a representative diagram of the CMOS imager pixel cell of FIG. 3.
- FIG. 5 is a cross-sectional view of a semiconductor wafer undergoing the process of a preferred embodiment of the invention.
- FIG. 6 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 5.
- FIG. 7 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 6.
- FIG. 8 shows the wafer of FIG. 5 at a processing step subsequent to that shown in FIG. 7.
- FIG. 9 is an illustration of a computer system having an imager with a microlens array according to the present invention.
- In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized, and that structural, logical and electrical changes may be made without departing from the spirit and scope of the present invention.
- The terms “wafer” and “substrate” are to be understood as including silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. Furthermore, when reference is made to a “wafer” or “substrate” in the following description, previous process steps may have been utilized to form regions or junctions in the base semiconductor structure or foundation. In addition, the semiconductor need not be silicon-based, but could be based on silicon-germanium, germanium, or gallium arsenide. The term “pixel” refers to a picture element unit cell containing a photosensor and transistors for converting electromagnetic radiation to an electrical signal. For purposes of illustration, a representative CMOS imager pixel is illustrated in the figures and description herein. However, this is just one example of the type of imagers and pixel cells thereof with which the invention may be used. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
- Referring now to the drawings, where like elements are designated by like reference numerals, a solid-
state imager 20 containing an embodiment of themicrolens array 22 of the present invention is shown in FIGS. 1 and 2. Theimager 20 comprises a microlens array orlight condensing layer 22 formed over apixel array 26 as part of thesame substrate 30, which may be any of the types of substrate described above. Thepixel array 26 is comprised of a plurality ofpixel sensor cells 28 formed in the substrate, and is covered by aprotective layer 24 that acts as a passivation and planarization layer for theimager 20.Protective layer 24 may be a layer of BPSG, PSG, BSG, silicon dioxide, silicon nitride, polyimide, or other well-known light transmissive insulator. The microlens array orlight condensing layer 22 is formed on theprotective layer 24, and is comprised of a plurality ofmicrolenses 32. In a preferred embodiment, depicted in FIGS. 1 and 2, themicrolens array 22 is formed so that amicrolens 32 is formed above eachpixel cell 28. Themicrolens array 22 is formed such that the focal point of the array is centered over the photosensitive elements in eachpixel cell 28. The device also includes aspacer layer 25 under themircolens array 22. The thickness ofspacer layer 25 is adjusted such that the photosensitive element is at a focal point for the light traveling throughmicrolens array 22. Thespacer layer 25 may have a thickness of from about 1 μm to about 20 μm. If desired, a color filter, fluorescent material film, or other device for converting the wavelength of incident light may be used with thepixel array 26 by placing the device on top of theprotective layer 24 and beneath themicrolens array 22. - As can be seen in FIGS. 3 through 4, each
pixel sensor cell 28 contains aphotosensor 34, which may be a photodiode, photogate, or the like. Aphotogate photosensor 34 is depicted in FIGS. 3 through 4. An applied control signal PG is applied to thephotogate 34 so that whenincident radiation 100 in the form of photons strikes thephotosensor 34 the photo-generated electrons accumulate in thedoped region 36 under thephotosensor 34. Atransfer transistor 38 is located next to thephotosensor 34, and has source anddrain regions gate stack 42 controlled by a transfer signal TX. Thedrain region 40 is also called a floating diffusion region or a floating diffusion node, and it passes charge received from thephotosensor 34 tooutput transistors circuitry 48. Areset transistor 50 comprised of dopedregions gate stack 54 is controlled by a reset signal RST which operates to reset thefloating diffusion region 40 to a predetermined initial voltage just prior to signal readout. - As can best be seen in FIG. 3, the
gate stacks pixel cell 28 include a silicon dioxide orsilicon nitride insulator 56 on thesubstrate 30, which in this example is a p-type substrate, a conductive layer 58 of doped polysilicon, tungsten, or other suitable material over theinsulating layer 56, and aninsulating cap layer 60 of, for example, silicon dioxide, silicon nitride, or ONO (oxide-nitride-oxide). Asilicide layer 59 may be used between the polysilicon layer 58 and thecap 60, if desired. Insulatingsidewalls 62 are also formed on the sides of the gate stacks 42, 54. These sidewalls may be formed of, for example, silicon dioxide, silicon nitride, or ONO. Afield oxide layer 64 around thepixel cell 28 serves to isolate it from other pixel cells in the array. A secondgate oxide layer 57 may be grown on the silicon substrate and the photogatesemi-transparent conductor 66 is patterned. In the case that the photosensor is a photodiode, no secondgate oxide layer 57 and no photogatesemi-transparent conductor 66 is required. Furthermore, for the case of a photodiode, a transfer gate is optional. - The
microlens array 22 of a preferred embodiment is formed so that amicrolens 32 is formed above eachpixel cell 28, as can be seen in FIGS. 3 through 5. Themicrolens 32 has three transparent layers, arefractive layer 70 and aninsulation layer 72 andspacer layer 25. Therefractive layer 70 is fashioned from transparent material with a suitable refractive index which may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate. Theinsulation layer 72 is also transparent, and is made from a silicon insulator such as silicon oxide, silicon nitride, or silicon oxynitride that has been formed by a low temperature process, such as a plasma enhanced chemical vapor deposition process conducted at a temperature within the range of approximately 200 to 400 degrees Celsius. The shape of themicrolens 32 as seen from above may be circular, lenticular, ovoid, rectangular, hexagonal or any other suitable shape. - The
microlens 32 operates to refractincident radiation 100 from the circuitry region of thepixel cell 28 to the photosensor region. As can be seen in FIG. 3, themicrolens 32 is a plano-convex lens having a generally semi-circular cross-section.Light radiation 100 is typically perpendicularly incident to thepixel cell 28, and if no microlens were used, light radiation not directed at the photosensor 34 would not ever strike it, i.e., light radiation directed at thereset gate 54, for example, would strike thereset gate 54 and not thephotosensor 34. Use of a microlens, which because of its convex shape acts to condense or focusincident radiation 100 into a smaller area than that of themicrolens 32, enables light radiation not originally directed at the photosensor 34 to be redirected towards thephotosensor 34. For example,light radiation 100 incident on an outer edge of themicrolens 32 is refracted as it passes through the microlens towards the optical axis of themicrolens 32, which is positioned over thephotosensor 34, and therefore strikes thephotosensor 34, whereas an unrefracted beam would not strike thephotosensor 34. - As
pixel sensor cells 28 decrease in size due to the demand for increased array density, complications in conventional photolithography and other patterning processes result in the formation of conventional microlenses that do not completely cover thepixel sensor cell 28. This can be seen mostly clearly in FIG. 3, wherein therefractive layer 70 extends across a large portion of thepixel cell 28, but due to the limitations of the patterning process does not cover theentire pixel cell 28. The present invention provides aninsulation layer 72 covering therefractive layer 70, thereby effectively expanding the area of thepixel cell 28 that is covered by a refractive surface, so that a greater proportion of radiation incident on thepixel cell 28 is directed to thephotosensor 34, thereby improving the fill factor of thepixel sensor cell 28. Themicrolens array 22 can be used in aCMOS imager 20, as is shown in FIGS. 1, 3 and 4, or may be used in a CCD imager. - The
microlens array 22 is manufactured through a process described as follows, and illustrated by FIGS. 6 through 9. Referring now to FIG. 6, asubstrate 30, which may be any of the types of substrates described above, having apixel array 26, peripheral circuits, contacts and wiring formed thereon by well-known methods, is provided. Aprotective layer 24 of BPSG, BSG, PSG, silicon dioxide, silicon nitride or the like is formed over thepixel array 26 to passivate it and to provide a planarized surface. Aspacing layer 25 is formed over theprotective layer 24. Alens forming layer 80 is formed on thespacer layer 25 by spin-coating or other suitable means. Thelens forming layer 80 may be an optical thermoplastic such as polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, or polystyrene, a polyimide, a thermoset resin such as an epoxy resin, a photosensitive gelatin, or a radiation curable resin such as acrylate, methacrylate, urethane acrylate, epoxy acrylate, or polyester acrylate. - Next, as shown in FIG. 7, the
lens forming layer 80 is patterned by conventional photolithography, or other suitable means, to form a plurality oflens forming regions 82. In the exemplary embodiment illustrated, eachlens forming region 82 overlies apixel cell 28, although alternative constructions in which alens forming region 82 overliesmultiple pixel cells 28 are foreseen. The shape of thelens forming regions 82 as seen from above may be circular, lenticular, ovoid, rectangular, hexagonal or any other suitable shape. - Referring now to FIG. 8, the
substrate 30 is then treated, by heat treatment or other suitable treatment, to formrefractive lenses 70 from thelens forming regions 82. The treatment used to form therefractive lenses 70 depends on the material used to form thelens forming layer 80. If the material of thelens forming layer 80 may be heat treated, then heat treatment processes such as baking may be used. If the material is extremely photosensitive, then special light exposure techniques may be used, as further described below. - Heat treatment relies on the use of flowable materials such as optical thermoplastics, polyimides, and thermoset resins, which may be melted at relatively low temperatures to produce a smooth-surfaced lens. A typical baking process involves heating the
substrate 30 at a temperature of approximately 100 to 350 degrees Celsius for a suitable length of time, such as 30 minutes. As a result of the heat applied, thelens forming regions 82 melt and surface tension in the resultant liquid results in the formation of a smoothconvex lens 70 with a semi-circular cross-section. - Certain photosensitive materials such as gelatin and radiation curable resins exhibit a phenomenon in which, when selectively exposed to light, unreacted compounds move from the unexposed regions to the exposed regions, resulting in a swelling of the exposed regions. This phenomenon may be used to form
refractive lenses 70 from thelens forming regions 82. Thelens forming regions 82 are selectively illuminated with light from a mercury lamp or the like through the top or bottom of the substrate, which has been masked with a photomask or other suitable device for creating a lens pattern. The illumination time depends on the thickness of thelens forming regions 82, the degree of parallelism of the light beams, and the intensity of the light used, but should be sufficient to cause thelens forming regions 82 to swell into smoothconvex lenses 70 having a generally semi-circular cross-section. - FIG. 9 shows the next step of the process, in which a
transparent insulation layer 72 is formed on thelenses 70 via a low temperature deposition process such as plasma enhanced chemical vapor deposition (CVD). The low temperatures are within the range of approximately 200 to 400 degrees Celsius. Thetransparent insulation layer 72 may be formed of a silicon insulator such as silicon oxide, silicon nitride, or silicon oxynitride that is transparent to radiation. A CVD process is especially preferred if thetransparent insulation layer 72 is formed from silicon oxide, because the CVD process permits the use of tetraethylorthosilicate (TEOS) as the silicon source, as opposed to silane, and therefore results in improved conformal deposition. - The
microlens array 22 is essentially complete at this stage, and conventional processing methods may now be performed to package theimager 20. Pixel arrays having the microlens arrays of the present invention, and described with reference to FIGS. 1-9, may be further processed as known in the art to arrive at CMOS, CCD, or other imagers. If desired, theimager 20 may be combined with a processor, such as a CPU, digital signal processor or microprocessor, in a single integrated circuit, and may be used in a processor system such as the typical processor-based system illustrated generally at 400 in FIG. 10. A processor based system is exemplary of a system having digital circuits which could include CMOS or other imager devices. Without being limiting, such a system could include a computer system, camera system, scanner, machine vision system, vehicle navigation system, video telephone, surveillance system, auto focus system, star tracker system, motion detection system, image stabilization system and data compression system for high-definition television, all of which can utilize the present invention. - As shown in FIG. 10, a processor system such as a computer system, for example, generally comprises a central processing unit (CPU)444, e.g., a microprocessor, that communicates with an input/output (I/O)
device 446 over abus 452. Theimager 20 also communicates with the system overbus 452. Thecomputer system 400 also includes random access memory (RAM) 448, and, in the case of a computer system may include peripheral devices such as afloppy disk drive 454 and a compact disk (CD)ROM drive 456 which also communicate withCPU 444 over thebus 452. Theimager 20 is preferably constructed as an integrated circuit, with or without memory storage, which includes amicrolens array 22 having an improved fill factor, as previously described with respect to FIGS. 1 through 9. - As can be seen by the embodiments described herein, the present invention encompasses a microlens array for use in a solid-state imager such as a CMOS imager or CCD imager. The microlens array has an improved fill factor due to the presence of multi-layer lenses having an insulation layer over a refractive layer.
- It should again be noted that although the invention has been described with specific reference to imaging circuits having a pixel array, the invention has broader applicability and may be used in any imaging apparatus. Similarly, the process described above is but one method of many that could be used. The above description and drawings illustrate preferred embodiments which achieve the objects, features and advantages of the present invention. It is not intended that the present invention be limited to the illustrated embodiments. Any modification of the present invention which comes within the spirit and scope of the following claims should be considered part of the present invention.
Claims (15)
1-59. (Cancelled).
60. A method of forming a microlens array for use in an imaging device, said method comprising the steps of:
providing a substrate having an array of pixel sensor cells formed thereon and a protective layer over the cells;
forming a spacer layer in contact with the protective layer;
forming a lens forming layer over and in contact with the spacer layer;
forming microlens array from said lens forming layer; and
forming a radiation transparent insulation layer on said microlens array for increasing the proportion of radiation incident on said pixel sensor cells, by extending the light-capturing capabilities beyond a periphery area surrounding each individual microlens of sand microlens array, wherein said insulation layer includes silicon insulator material.
61. The method of claim 60 , wherein the substrate further comprises a CMOS pixel array formed thereon.
62. The method of claim 60 , wherein the substrate further comprises a CCD pixel array formed thereon.
63. The method of claim 60 , wherein said step of forming the lens forming layer comprises a spin-coating process.
64. The method of claim 60 , wherein the lens forming layer is a layer of material selected from the group consisting of optical thermoplastic, polyimide, thermoset resin, photosensitive gelatin, and radiation curable resin.
65. The method of claim 64 , wherein the optical thermoplastic is selected from the group consisting of polymethylmethacrylate, polycarbonate, polyolefin, cellulose acetate butyrate, and polystyrene.
66. The method of claim 64 , wherein the radiation curable resin is selected from the group consisting of acrylate, methacrylate, urethane acrylate, epoxy acrylate, and polyester acrylate.
67. The method of claim 60 , wherein the insulation layer is a layer of material selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride.
68. The method of claim 60 , wherein said insulation layer forming step comprises a chemical vapor deposition step.
69. The method of claim 60 , wherein said insulation layer forming step comprises a low temperature plasma deposition step.
70. The method of claim 69 , wherein said silicon insulator material is formed by a low temperature process operation within the range of approximately 200 to 400 degrees Celsius.
71. The method according to claim 60 , further comprising forming a spacer layer under said microlens array.
72. The method according to claim 71 , wherein said spacer layer has a thickness of from about 1 μm to about 20 μm.
73-99. (Cancelled).
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6376868B1 (en) * | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
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US20050211665A1 (en) * | 2004-03-26 | 2005-09-29 | Sharp Laboratories Of America, Inc. | Methods of forming a microlens array |
US7158181B2 (en) * | 2004-05-04 | 2007-01-02 | Andrew G. Cartlidge | System and methods for increasing fill-factor on pixelated sensor arrays |
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US7508431B2 (en) * | 2004-06-17 | 2009-03-24 | Hoya Corporation | Solid state imaging device |
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US20060261385A1 (en) * | 2005-05-23 | 2006-11-23 | Micron Technology, Inc. | Phase shift transparent structures for imaging devices |
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US7352511B2 (en) * | 2006-04-24 | 2008-04-01 | Micron Technology, Inc. | Micro-lenses for imagers |
US7393477B2 (en) * | 2006-08-15 | 2008-07-01 | United Microelectronics Corp. | Method of fabricating microlens structure |
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JP5030215B2 (en) * | 2007-01-17 | 2012-09-19 | 国立大学法人 東京大学 | Microdevice and manufacturing method thereof |
FR2911404B1 (en) * | 2007-01-17 | 2009-04-10 | Essilor Int | TRANSPARENT OPTICAL COMPONENT WITH CELLS FILLED WITH OPTICAL MATERIAL |
JP4931160B2 (en) * | 2007-09-05 | 2012-05-16 | 国立大学法人東北大学 | Solid-state image sensor |
US7923298B2 (en) | 2007-09-07 | 2011-04-12 | Micron Technology, Inc. | Imager die package and methods of packaging an imager die on a temporary carrier |
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US7968923B2 (en) * | 2008-03-12 | 2011-06-28 | Omnivision Technologies, Inc. | Image sensor array with conformal color filters |
US7894143B2 (en) * | 2008-11-12 | 2011-02-22 | Visera Technologies Company Limited | Image capture lens |
KR20120029727A (en) * | 2010-09-17 | 2012-03-27 | 엘지이노텍 주식회사 | Light emitting device package |
US8602308B2 (en) * | 2011-12-22 | 2013-12-10 | Symbol Technologies, Inc. | Imaging device having light field sensor |
US9128218B2 (en) * | 2011-12-29 | 2015-09-08 | Visera Technologies Company Limited | Microlens structure and fabrication method thereof |
TWI500926B (en) * | 2012-11-23 | 2015-09-21 | Innocom Tech Shenzhen Co Ltd | Flat panel x-ray detector |
US10249661B2 (en) * | 2014-08-22 | 2019-04-02 | Visera Technologies Company Limited | Imaging devices with dummy patterns |
TWI664722B (en) * | 2016-12-20 | 2019-07-01 | 精材科技股份有限公司 | Semiconductor structure and method for manufacturing semiconductor structure |
Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5118924A (en) * | 1990-10-01 | 1992-06-02 | Eastman Kodak Company | Static control overlayers on opto-electronic devices |
US5298366A (en) * | 1990-10-09 | 1994-03-29 | Brother Kogyo Kabushiki Kaisha | Method for producing a microlens array |
US5300263A (en) * | 1992-10-28 | 1994-04-05 | Minnesota Mining And Manufacturing Company | Method of making a microlens array and mold |
US5384231A (en) * | 1993-08-24 | 1995-01-24 | Eastman Kodak Company | Fabricating lens array structures for imaging devices |
US5420634A (en) * | 1991-04-01 | 1995-05-30 | Olympus Optical Co., Ltd. | Solid state imaging device |
US5453876A (en) * | 1988-08-30 | 1995-09-26 | Sharp Kabushiki Kaisha | Microlens array |
US5479049A (en) * | 1993-02-01 | 1995-12-26 | Sharp Kabushiki Kaisha | Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof |
US5559336A (en) * | 1994-07-05 | 1996-09-24 | Santa Barbara Research Center | Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands |
US5610390A (en) * | 1994-10-03 | 1997-03-11 | Fuji Photo Optical Co., Ltd. | Solid-state image pickup device having microlenses each with displaced optical axis |
US5666175A (en) * | 1990-12-31 | 1997-09-09 | Kopin Corporation | Optical systems for displays |
US5691548A (en) * | 1993-09-28 | 1997-11-25 | Sharp Kabushiki Kaisha | Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same |
US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
US5701008A (en) * | 1996-11-29 | 1997-12-23 | He Holdings, Inc. | Integrated infrared microlens and gas molecule getter grating in a vacuum package |
US5796154A (en) * | 1995-05-22 | 1998-08-18 | Matsushita Electronics Corporation | Solid-state imaging device with dual lens structure |
US5844289A (en) * | 1996-05-21 | 1998-12-01 | Nec Corporation | Solid-state image sensor with microlens and optical fiber bundle |
US5887049A (en) * | 1996-11-12 | 1999-03-23 | California Institute Of Technology | Self-triggered X-ray sensor |
US5997621A (en) * | 1992-10-06 | 1999-12-07 | Minnesota Mining And Manufacturing Co. | Coating composition having anti-reflective and anti-fogging properties |
US6040591A (en) * | 1997-03-25 | 2000-03-21 | Sony Corporation | Solid state imaging device having refractive index adjusting layer and method for making same |
US6071443A (en) * | 1996-11-27 | 2000-06-06 | Dai Nippon Printing Co., Ltd. | Method of producing lens sheet and projection screen |
US6104021A (en) * | 1997-04-09 | 2000-08-15 | Nec Corporation | Solid state image sensing element improved in sensitivity and production cost, process of fabrication thereof and solid state image sensing device using the same |
US6171883B1 (en) * | 1999-02-18 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof |
US6274917B1 (en) * | 1999-10-12 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US6583438B1 (en) * | 1999-04-12 | 2003-06-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
US6617189B1 (en) * | 2002-02-07 | 2003-09-09 | United Microelectronics Corp. | Method of fabricating an image sensor |
-
1999
- 1999-07-19 US US09/357,168 patent/US6307243B1/en not_active Expired - Lifetime
-
2004
- 2004-05-24 US US10/851,090 patent/US20040214368A1/en not_active Abandoned
Patent Citations (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5453876A (en) * | 1988-08-30 | 1995-09-26 | Sharp Kabushiki Kaisha | Microlens array |
US5118924A (en) * | 1990-10-01 | 1992-06-02 | Eastman Kodak Company | Static control overlayers on opto-electronic devices |
US5298366A (en) * | 1990-10-09 | 1994-03-29 | Brother Kogyo Kabushiki Kaisha | Method for producing a microlens array |
US5666175A (en) * | 1990-12-31 | 1997-09-09 | Kopin Corporation | Optical systems for displays |
US5420634A (en) * | 1991-04-01 | 1995-05-30 | Olympus Optical Co., Ltd. | Solid state imaging device |
US5997621A (en) * | 1992-10-06 | 1999-12-07 | Minnesota Mining And Manufacturing Co. | Coating composition having anti-reflective and anti-fogging properties |
US5300263A (en) * | 1992-10-28 | 1994-04-05 | Minnesota Mining And Manufacturing Company | Method of making a microlens array and mold |
US5479049A (en) * | 1993-02-01 | 1995-12-26 | Sharp Kabushiki Kaisha | Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof |
US5384231A (en) * | 1993-08-24 | 1995-01-24 | Eastman Kodak Company | Fabricating lens array structures for imaging devices |
US5691548A (en) * | 1993-09-28 | 1997-11-25 | Sharp Kabushiki Kaisha | Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same |
US5559336A (en) * | 1994-07-05 | 1996-09-24 | Santa Barbara Research Center | Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands |
US5610390A (en) * | 1994-10-03 | 1997-03-11 | Fuji Photo Optical Co., Ltd. | Solid-state image pickup device having microlenses each with displaced optical axis |
US5796154A (en) * | 1995-05-22 | 1998-08-18 | Matsushita Electronics Corporation | Solid-state imaging device with dual lens structure |
US5693967A (en) * | 1995-08-10 | 1997-12-02 | Lg Semicon Co., Ltd. | Charge coupled device with microlens |
US5844289A (en) * | 1996-05-21 | 1998-12-01 | Nec Corporation | Solid-state image sensor with microlens and optical fiber bundle |
US5887049A (en) * | 1996-11-12 | 1999-03-23 | California Institute Of Technology | Self-triggered X-ray sensor |
US6071443A (en) * | 1996-11-27 | 2000-06-06 | Dai Nippon Printing Co., Ltd. | Method of producing lens sheet and projection screen |
US5701008A (en) * | 1996-11-29 | 1997-12-23 | He Holdings, Inc. | Integrated infrared microlens and gas molecule getter grating in a vacuum package |
US6040591A (en) * | 1997-03-25 | 2000-03-21 | Sony Corporation | Solid state imaging device having refractive index adjusting layer and method for making same |
US6104021A (en) * | 1997-04-09 | 2000-08-15 | Nec Corporation | Solid state image sensing element improved in sensitivity and production cost, process of fabrication thereof and solid state image sensing device using the same |
US6171883B1 (en) * | 1999-02-18 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof |
US6583438B1 (en) * | 1999-04-12 | 2003-06-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
US6274917B1 (en) * | 1999-10-12 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
US6617189B1 (en) * | 2002-02-07 | 2003-09-09 | United Microelectronics Corp. | Method of fabricating an image sensor |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8263995B2 (en) * | 2004-04-01 | 2012-09-11 | Cree, Inc. | Three dimensional features on light emitting diodes for improved light extraction |
US20110068351A1 (en) * | 2004-04-01 | 2011-03-24 | Matthew Donofrio | Method of Forming Three Dimensional Features on Light Emitting Diodes for Improved Light Extraction |
US7554143B2 (en) * | 2004-06-22 | 2009-06-30 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method of fabricating the same |
US20070018213A1 (en) * | 2004-06-22 | 2007-01-25 | Dongbuanam Semiconductor Inc. | CMOS image sensor and method of fabricating the same |
US8692267B2 (en) * | 2004-09-22 | 2014-04-08 | Cree, Inc. | High efficiency Group III nitride LED with lenticular surface |
US20110284875A1 (en) * | 2004-09-22 | 2011-11-24 | Cree, Inc. | High efficiency group iii nitride led with lenticular surface |
US8878209B2 (en) | 2004-09-22 | 2014-11-04 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US20060071149A1 (en) * | 2004-09-30 | 2006-04-06 | Stmicroelectronics, Inc. | Microlens structure for opto-electric semiconductor device, and method of manufacture |
US20060067607A1 (en) * | 2004-09-30 | 2006-03-30 | Stmicroelectronics, Inc. | Method and system for vertical optical coupling on semiconductor substrate |
US7389013B2 (en) | 2004-09-30 | 2008-06-17 | Stmicroelectronics, Inc. | Method and system for vertical optical coupling on semiconductor substrate |
US20080206919A1 (en) * | 2004-09-30 | 2008-08-28 | Stmicroelectronics, Inc. | Method of manufacture of a microlens structure for opto-electric semiconductor device |
US7704780B2 (en) | 2004-11-09 | 2010-04-27 | Aptina Imaging Corporation | Optical enhancement of integrated circuit photodetectors |
US20090081822A1 (en) * | 2004-11-09 | 2009-03-26 | Aptina Imaging Corporation | Optical enhancement of integrated circuit photodetectors |
GB2455224A (en) * | 2004-11-09 | 2009-06-03 | Micron Technology Inc | Integrated circuit photodetector with an embedded microlens |
US7459733B2 (en) | 2004-11-09 | 2008-12-02 | Aptina Imaging Corporation | Optical enhancement of integrated circuit photodetectors |
GB2420224B (en) * | 2004-11-09 | 2009-09-09 | Agilent Technologies Inc | Integrated circuit photodetectors |
GB2455224B (en) * | 2004-11-09 | 2009-11-18 | Micron Technology Inc | Integrated circuit photodetetectors |
US20070158696A1 (en) * | 2004-11-09 | 2007-07-12 | Chintamani Palsule | Optical enhancement of integrated circuit photodetectors |
US7208783B2 (en) | 2004-11-09 | 2007-04-24 | Micron Technology, Inc. | Optical enhancement of integrated circuit photodetectors |
US20060097244A1 (en) * | 2004-11-09 | 2006-05-11 | Chintamani Palsule | Optical enhancement of integrated circuit photodetectors |
US20090032714A1 (en) * | 2005-04-19 | 2009-02-05 | Deutsches Krebsforschungszentrum Stiftung des öffentlichen Rechts | Optical imaging detector |
JP2012237759A (en) * | 2005-04-19 | 2012-12-06 | Deutsches Krebsforschungszentrum Stiftung Des Offentlichen Rechts | Optical imaging detector |
WO2006111486A1 (en) * | 2005-04-19 | 2006-10-26 | Dkfz Deutsches Krebsforschungszentrum | Optical imaging detector |
US8227754B2 (en) | 2005-04-19 | 2012-07-24 | Deutsches Krebforschungszentrum Stiftung Des Oeffentlichen Rechts | Optical imaging detector |
US20080019168A1 (en) * | 2006-07-24 | 2008-01-24 | Cha-Hsin Lin | Memory structure and data writing method thereof |
US20080274580A1 (en) * | 2007-05-03 | 2008-11-06 | Chung-Kyung Jung | Method for manufacturing image sensor |
US20120050599A1 (en) * | 2010-08-25 | 2012-03-01 | Pixart Imaging Inc. | Image sensing device |
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US11760046B2 (en) | 2019-12-31 | 2023-09-19 | Semiconductor Components Industries, Llc | Multi-layered microlens systems and related methods |
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