US20040245112A1 - Apparatus and method for plating a substrate - Google Patents
Apparatus and method for plating a substrate Download PDFInfo
- Publication number
- US20040245112A1 US20040245112A1 US10/843,557 US84355704A US2004245112A1 US 20040245112 A1 US20040245112 A1 US 20040245112A1 US 84355704 A US84355704 A US 84355704A US 2004245112 A1 US2004245112 A1 US 2004245112A1
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- plating
- substrate
- vessel
- plating solution
- nozzle
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- 238000007747 plating Methods 0.000 title claims abstract description 508
- 239000000758 substrate Substances 0.000 title claims abstract description 448
- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000001035 drying Methods 0.000 claims abstract description 21
- 238000011068 loading method Methods 0.000 claims abstract description 16
- 230000033228 biological regulation Effects 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 8
- 230000008595 infiltration Effects 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 description 65
- 230000008569 process Effects 0.000 description 57
- 238000004140 cleaning Methods 0.000 description 45
- 238000009713 electroplating Methods 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000008367 deionised water Substances 0.000 description 17
- 229910021641 deionized water Inorganic materials 0.000 description 17
- 238000005498 polishing Methods 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000007772 electroless plating Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000009736 wetting Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000000866 electrolytic etching Methods 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- -1 copper complex compound Chemical class 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000013043 chemical agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
Definitions
- the present invention relates to an apparatus and method for plating a substrate, and more particularly to an apparatus and method used for plating metal films on a surface of a substrate such as a semiconductor wafer having fine interconnection grooves, holes or apertures of resist films thereon, or for forming solder bumps or protruding electrodes for electrically connecting to electrodes of semiconductor chip packages.
- the surface of a semiconductor chip having interconnects is formed with bumps or protruding electrodes comprised of gold, copper, solder, or nickel, or a layered structure of the above-mentioned materials, for electrically connecting with other chip package electrodes or TAB electrodes.
- bumps or protruding electrodes comprised of gold, copper, solder, or nickel, or a layered structure of the above-mentioned materials, for electrically connecting with other chip package electrodes or TAB electrodes.
- Such bumps can be formed by processes such as electroplating, vapor deposition, printing, and ball-bumping. Recent trends of increasing number in I/O terminals on semiconductor chips, and smaller pitches of interconnections have lead to a wide use of electroplating, which can provide a fine structure metallization and relatively stable operation.
- Electroplating processes can be generally categorized in two types; a fountain type or cup type process in which a substrate such as a semiconductor wafer is plated while the surface to be plated faces downward and a plating solution flows upward to metallize the surface; and a dip type process in which the substrate is vertically placed in a plating vessel (container, cell, or the like) and the solution is supplied from the bottom to overflow from the top of the plating vessel.
- a plating vessel container, cell, or the like
- FIG. 28 shows an example of a conventional dip type electroplating unit.
- the electroplating unit comprises: a substrate holder 10 for detachably holding a substrate W such as semiconductor wafer; a plating vessel 16 containing a plating solution 12 , in which the substrate W supported by a substrate holder 10 and an anode 14 are immersed so as to confront each other; and a power source 18 for applying plating voltage between the anode 14 and feeder layer (seed layer) formed on the surface to be plated of the substrate W to supply plating current.
- An overflow vessel 22 is provided beside the plating vessel 16 for receiving a plating solution 12 which has flown over an upper edge of an overflow weir 20 of the plating vessel 16 .
- the overflow vessel 22 and the plating vessel 16 is communicated through a circulation line 24 provided with a circulation pump 26 , a thermostat unit 28 , and a filter 30 .
- the plating solution 12 driven by the circulation pump 26 is supplied to and fills the plating vessel 16 , and then overflows the weir 20 to flow into the overflow vessel 22 and returns to the circulation pump 26 for circulation.
- a plurality of puddles are vertically suspended from a lower surface of a puddle shaft 32 , which is arranged above the plating vessel 16 , horizontally between the substrate holder 10 and the anode 14 , and parallel to their surfaces.
- the puddles are reciprocated horizontally in a direction parallel to the substrate W via the puddle shaft 32 to agitate the plating solution 12 within the plating vessel 16 , so as to facilitate the formation of a plating film with uniform thickness.
- the substrate holder 10 used in the conventional dip type electroplating unit can detachably holds the substrate W while sealing the peripheral edge surface and the rear surface to expose the front surface to be plated.
- the substrate W is immersed in the plating solution 12 together with the holder for plating.
- a conventional substrate holder comprises a pair of supports (holding members) which are open-and closeable to each other, and one support is provided with a fixer ring.
- the substrate holder is used to hold a substrate by driving the fixer ring to rotate, while the substrate is held between the supports, to push the one support toward the other so that the a seal ring attached to the one support is pressed against the peripheral region of the substrate surface for sealing.
- the substrate is held by the holder and the holder having the substrate is transferred to plating or processing vessels, and the substrate is immersed into the plating solution or other processing solutions together with the holder.
- the first object of this invention is to provide a plating apparatus and method in which bubbles generated at the plating surfaces are easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved by controlling the flow of the plating solution within the plating vessel.
- Another object of the invention is to provide a plating apparatus and method which can plate a substrate while the peripheral portion is securely sealed, which is suitable for a small number and small lot production, and can facilitate to produce a compact plating apparatus.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with one aspect of the present invention comprises: a cassette table for loading a cassette containing therein a substrate; an aligner for aligning the substrate; a rinser-dryer for rinsing and drying the substrate; and a plating unit for plating the substrate, the plating unit comprising a plating vessel containing a plating solution, a holder for holding the substrate while being immersed in the plating solution in the plating vessel so as to expose the plating surface to the plating solution, and a nozzle for ejecting the plating solution toward the plating surface.
- the nozzle may be movable parallel to the plating surface.
- the nozzle may be provided between an anode placed within the plating vessel to confront the plating surface, and the nozzle may be provided between the anode and the plating surface.
- the nozzle may be provided on a puddle, which is movably arranged within the plating vessel for agitating the plating solution within the plating vessel.
- the nozzle may be provided on a regulation plate arranged between an anode placed in the plating vessel and the plating surface.
- An ejecting angle of the nozzle relative to the plating surface may be adjustable.
- the nozzle may be supplied with a plating solution within the plating vessel circulated by a circulation line.
- the nozzle may be provided with a flow controller for controlling a flow rate of the plating solution ejected by the nozzle.
- the nozzle may comprise a nozzle assembly comprising a plurality of nozzles.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with another aspect of the present invention comprises: a plating vessel containing a plating solution; a holder for holding the substrate while exposing the plating surface to the plating solution within the plating vessel; a nozzle provided in the plating vessel to confront to the plating surface for ejecting a plating solution toward the plating surface.
- the nozzle may be movable relative to the plating surface.
- the nozzle may be arranged to eject the plating solution at a substantially right angle relative to the plating surface.
- the nozzle may be arranged to eject the plating solution at an oblique angle relative to the plating surface.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with another aspect of the present invention comprises: a plating vessel accommodating a plating solution and an anode therein and having a lateral opening; a substrate holder for holding the substrate while exposing the plating surface to the plating solution within the plating vessel and sealing the substrate to prevent infiltration of plating solution to a surface of the substrate other than the exposed plating surface; and a holder driving assembly for driving the substrate holder to a position where the plating surface covers the opening of the plating vessel.
- the substrate holder may be laterally slidable.
- the plating vessel may comprise a weir member for confining a reservoir surrounding the anode within the plating vessel, which can contain plating solution therein for immersing the anode.
- the apparatus may further comprise a rapid drain system for rapidly draining plating solution from the plating vessel.
- the apparatus may further comprise a nozzle for ejecting plating solution toward the plating surface of the substrate held by the substrate holder.
- the substrate holder may comprise a detachable seal unit comprising a seal ring and a cathode integrated together.
- the seal unit may comprise a seal member for water-tightly sealing the opening of the plating vessel.
- a method of plating a substrate having a plating surface to be plated comprising: accommodating a plating solution and an anode in a plating vessel having a lateral opening; holding the substrate with a substrate holder while exposing the plating surface to the plating solution within the plating vessel and sealing the substrate to prevent infiltration of plating solution to a surface of the substrate other than the exposed plating surface; and driving the substrate holder to a position where the plating surface covers the opening of the plating vessel.
- the plating vessel may comprise a weir member for confining a reservoir surrounding the anode within the plating vessel, the method comprising immersing the anode by introducing plating solution within the reservoir.
- the method may further comprise rapidly draining plating solution from the plating vessel after plating is finished.
- FIG. 1 is a vertical cross-sectional view of an embodiment of the present invention applied to an electroplating unit
- FIG. 2 is a plan view of the plating apparatus shown in FIG. 1;
- FIG. 3 is an enlarged view of another embodiment of a nozzle
- FIG. 4 is a plan view of another embodiment of the present invention applied to an electroless plating unit
- FIG. 5 is a vertical cross-sectional view of another embodiment of the present invention applied to an electroplating unit
- FIG. 6 is a plan view of a substrate plating apparatus having a plating unit according to an embodiment of the present invention.
- FIG. 7 is a schematic view showing airflow within the substrate plating apparatus of FIG. 6;
- FIG. 8 is an embodiment of an interconnect formation apparatus having an electroplating unit and electrolytic etching unit according to the present invention
- FIG. 9 is a flow chart showing a step flow in the interconnect formation apparatus of FIG. 8;
- FIG. 10 is a cross-sectional view schematically showing the process of plating a substrate
- FIG. 11 is a plan view of a semiconductor manufacturing apparatus having an electroplating apparatus and an electroless plating apparatus according to an embodiment of the present invention
- FIGS. 12 ( a ) to 12 ( c ) are cross-sectional views showing the process of making a semiconductor device
- FIG. 13 is a plan view of another plating apparatus having an electroplating unit
- FIG. 14 is a cross-sectional view schematically showing the process of plating a bump on a substrate
- FIG. 15 is a plan view of another plating apparatus having an electroplating unit
- FIG. 16 is a plan view of another substrate plating apparatus having a plating unit according to an embodiment of the present invention.
- FIG. 17 is a schematic view showing a plating unit when a substrate is inserted in the substrate holder
- FIG. 18 is a schematic view showing a plating unit when it is plating a substrate
- FIG. 19 is a schematic rear view showing a plating unit during maintenance
- FIG. 20 is a schematic front view showing a plating unit during maintenance
- FIG. 21 is a view showing a cross section of a plating vessel and a flow diagram of a plating solution regulation supply system
- FIG. 22 is a partial enlarged view of FIG. 21;
- FIG. 23 is a vertical cross-sectional view showing a substrate holder
- FIGS. 24 ( a ) to 24 ( e ) are schematic views showing the process of holding a substrate with a substrate holder
- FIGS. 25 ( a ) to 25 ( d ) are schematic views showing the process of preparing for plating a substrate while blocking an opening of a substrate plating vessel;
- FIGS. 26 ( a ) to 26 ( d ) are schematic views showing the process of plating a substrate while blocking an opening of a substrate plating vessel;
- FIGS. 27 ( a ) to 27 ( e ) are schematic views showing the process of plating a bump on a substrate.
- FIG. 28 is a schematic view showing a conventional substrate plating unit.
- FIGS. 1 and 2 show an embodiment of the invention applied to an electroplating unit.
- the electroplating unit comprises: a vertically movable substrate holder 10 for detachably holding a substrate W to be plated such as a semiconductor wafer; a plating vessel or a plating cell 16 for accommodating a plating solution 12 , a substrate W vertically held by the substrate holder 10 , and an anode 14 (positive electrode) so that the substrate W and anode 14 are immersed in the plating solution 12 to confront each other; a plating power source 18 for applying plating voltage between the anode 14 and a feeding layer (seed layer) formed on the surface to be plated of the substrate W to supply plating current.
- a plating power source 18 for applying plating voltage between the anode 14 and a feeding layer (seed layer) formed on the surface to be plated of the substrate W to supply plating current.
- a plurality of puddles (agitating rods) 34 are vertically suspended from a lower surface of a puddle shaft 32 , which is arranged above the plating vessel 16 , horizontally located between the substrate holder 10 and the anode 14 , and parallel to the surface of the substrate W.
- the puddle shaft 32 is provided with a drive assembly 46 comprising a rack 40 attached to the puddle shaft 32 , a worm gear 44 attached to a drive shaft of a motor 42 and engaging with the rack 40 , to thereby traverse the vessel 16 along with normal and reverse rotations of the motor 42 .
- the drive assembly 46 can be constructed by any component such as combination of a rack and a pinion, a linkage, or a linear slider.
- Plating solution nozzles 48 are provided to each of the puddles 34 at the edge facing the substrate W held by the holder 10 and at mutual distances along a vertical direction to open toward the substrate W held by the holder 10 for ejecting or spurting the plating solution. 12 thereto.
- plating solution passages 50 are provided to mutually communicate and reach to the plating solution nozzles 48 .
- the plating solution passages 50 have an open end connected to a plating solution circulation line 56 having a circulation pump 52 and a flow regulator 54 , and the other end of the plating solution circulation line 56 is opening in the plating vessel 16 .
- the plating solution 12 within the plating vessel 16 is pumped up by the circulation pump 52 and the flow rate in the circulation line 56 is adjusted by the flow regulator 54 .
- the plating solution 12 is then supplied to each nozzles 48 through the line 50 to be ejected toward the substrate W held by the holder 10 .
- the nozzles 48 are provided on the puddle 34 which reciprocates parallel to the substrate W to agitate the plating solution 12 within the plating vessel 16 , different members for carrying and moving the plating solution nozzles 48 are not necessary so as to simplify the structure of the unit.
- the embodiment uses a flow regulator 54 as a flow regulating device for plating solution 12 , this can be dispensed with by using a positive displacement pump which may dual-purposely function as a flow regulator. Also, the embodiment employs a straight nozzle system in which the plating solution 12 is linearly ejected from the nozzle 48 , different system can be used such as a showering system in which the solution is sprayed in a shower or as an atomized mist.
- plating process by the above described plating unit will be explained below. Initially, a predetermined amount of plating solution 12 is supplied to the plating vessel 16 , and the holder 10 holding a substrate W is lowered to a predetermined position where the substrate W confronts the anode 14 readily immersed in the plating solution 12 . Then, a predetermined plating voltage is applied between the anode 14 and the substrate W by the plating power source 18 for forming a plating film on the substrate surface.
- the drive assembly 46 drives the puddle 34 to reciprocatingly traverse the bath within the vessel 16 parallel to the substrate W to agitate the plating solution 12 , and the circulation pump 52 is simultaneously driven to eject the plating solution 12 from the nozzles 48 toward the substrate W held by the holder 10 .
- Such processes of agitation of the plating solution 12 by the reciprocating puddles 34 and ejecting of the plating solution 12 from the nozzles 48 are synchronized with the reciprocating movement of the puddles 34 and provides adequate amount of ions uniformly to the substrate W while directing the ejecting flow of the plating solution 12 against the substrate W from approximately orthogonal direction, thereby facilitating thickness uniformity of the plating film within the plated area.
- the anode 14 and the substrate W are disconnected from the plating power source 18 , and the holder 10 carrying the substrate W is lifted out of the plating vessel 16 . After treating necessary processes such as rinsing with deionized water, the plated substrate W is transferred to a next stage.
- the puddles 34 may be attached to the puddle shaft 32 through a ball joint, e.g., so that the attachment angle of the puddle 34 is adjustable for enabling adjustment of the angle of the plating solution 12 ejecting from the nozzle relative to the substrate surface.
- the angle of the plating solution 12 bumping to the substrate surface can be optionally adjusted in accordance with the dimension of the recesses formed on the substrate surface, e.g., to make the plating solution 12 effectively contact the recess surface.
- the apparatus can be provided with an overflow vessel as shown in a conventional apparatus of FIG. 28, and make the plating solution 12 having flown into the overflow vessel be ejected from the nozzles to thereafter be circulated.
- FIG. 4 shows another embodiment of the present invention applied to an electroless plating unit. This embodiment is different from the first embodiment in not having an anode 14 and a power source 18 since electroless plating does not use electricity and in using an electroless plating solution including reducing agent as the plating solution 12 for deposition of a metal film. Other structure is the same as the previously described embodiment.
- FIG. 5 shows another embodiment of the present invention applied to an electroplating unit.
- a regulation plate 60 having a central aperture 60 a of a size conforming to that of the substrate W is arranged between the substrate W held by the holder 10 and the anode 14 .
- the regulation plate 60 having the central aperture 60 a is widely used in the industry which functions to locally decrease the potential at the periphery of the substrate surface held by the holder 10 to thereby provide more uniform film thickness distribution.
- four nozzles 48 are provided on the surface of the regulation plate 60 facing the holder 10 at locations proximate to the central aperture 60 a and at catercorner locations, for example, for ejecting plating solution 12 toward the substrate W held by the holder 10 .
- the nozzles 48 may be provided on the inner surface of the central aperture 60 a .
- Plating solution passages (not shown) are provided within the regulation plate 60 which communicate with the nozzles 48 .
- the puddles 34 can be provided between the regulation plate 60 and the holder 10 .
- the regulation plate 60 which is generally used for the electroplating units is also used as a member for supporting nozzles 48 so that the nozzles 48 can be arranged at their positions by a relatively simple structure.
- FIG. 6 is a plan view of a plating apparatus comprising the above-described plating unit.
- the plating apparatus comprises: a loading/unloading unit 510 ; a pair of cleaning/drying process units 512 ; a pair of first substrate stages 514 ; a pair of bevel-etching/chemical-cleaning units 516 ; a pair of second substrate stages 518 ; a water-cleaning unit 520 capable of reversing the substrate 180 degrees; and four plating process units (electroplating units) 522 .
- the plating apparatus further comprises; a first transfer unit 524 for transferring the substrate W between the loading/unloading unit 510 , the cleaning/drying process units 512 , and the first substrate stages 514 ; a second transfer unit 526 for transferring the substrate W between the first substrate stages 514 , the bevel-etching/chemical-cleaning units 516 , and the second substrate stages 518 ; and a third transfer unit 528 for transferring the substrate W between the second substrate stages 518 , the water-cleaning unit 520 , and the plating process units 522 .
- Interior of the plating apparatus is partitioned by a partition wall 523 into a plating space 530 and a clean space 540 , and these spaces 530 , 540 are capable of being independently air-supplied and exhausted.
- the partition wall 523 is provided with an open/closeable shutter (not shown).
- the pressure within the clean space 540 is conditioned lower than the atmospheric pressure and higher than the plating space 530 pressure so that the air within the clean space 540 does not flow out of the plating apparatus and air within the plating space 530 does not flow into the clean space 540 .
- FIG. 7 shows air flows within the substrate plating apparatus.
- fresh air is introduced from the exterior through a duct 543 , forced through high-performance filters 544 by fans into the clean space 540 , and supplied from the ceiling 545 a as downward clean air flows around the cleaning/drying units 512 and the bevel-etching/chemical-cleaning units 516 .
- Most of the supplied clean air is returned from a floor 545 b through a circulation duct 552 to the ceiling 545 a , from which the clean air is forced again through the filters 544 by the fans into the clean space 540 to be circulated within the clean space 540 .
- a part of the clean air is exhausted from the cleaning/drying units 512 and the bevel-etching/chemical-cleaning units 516 through a duct 546 to the exterior.
- the clean space 540 pressure is conditioned lower than the atmospheric pressure.
- the plating space 530 is dirty and not a clean space due to the water-cleaning units 520 and the plating process units 522 , particles are not allowed to adhere to the surfaces of the substrates W.
- clean air is introduced through the duct 547 , filtered by high-performance filters 544 , forced into the plating space 530 to flow downward by fans. If the entire amount of clean downward flow air should be afforded by the supply from the exterior, a large amount of air is necessarily introduced and exhausted.
- air having returned to the ceiling 549 a through circulation duct 550 is forced again through the high-performance filters 544 and supplied to the plating space 530 as a clean air to be circulated.
- air including chemical mists or gases generated in the water-cleaning units 520 , plating process units 522 , transfer units and a plating solution conditioning tank 551 is exhausted through the duct 553 so that the plating space 530 is maintained in a lower pressure than the clean space 540 .
- FIG. 8 An interconnect formation apparatus comprising the electroplating apparatus described above and an additional electrolytic etching apparatus is shown in FIG. 8.
- the interconnect formation apparatus comprises the followings in pairs: loading/unloading units 210 ; cleaning/drying process units 212 ; temporary storage units 214 ; plating units 216 ; water-cleaning units 218 ; and etching process units 220 .
- the interconnect formation apparatus further comprises: a first transfer assembly 222 for transferring the substrate W between the loading/unloading units 210 , the cleaning/drying process units 212 , and the temporary storage units 214 ; and a second transfer assembly 224 for transferring the substrate W between the temporary storage units 214 , the plating process units 222 , the water-cleaning units 218 , and the etching process units 220 .
- Formation process of an interconnect will be described by further referring to FIGS. 9 and 10.
- a substrate W formed with a seed layer on the surface is picked up from the loading/unloading unit 210 by the first transfer assembly 222 to import to the plating process unit 216 one by one via the temporary storage unit 214 (step 1 ).
- the plating process unit 216 provides plating to the substrate W to form a copper layer 7 on the surface of the substrate W as shown in FIG. 10 (step 2 ).
- Plating solutions having a superior leveling ability is selected, in consideration of moderating a wide recess 7 a on the copper layer 7 , as a primary concern, resulting from a large recess existing on the substrate surface.
- Such plating solution may have a high concentration of copper sulfate and a low concentration of sulfuric acid, and one exemplified composition comprises 100 ⁇ 300 g/l of copper sulfate and 10 ⁇ 100 g/l of sulfuric acid, with an additive agent for promoting leveling ability containing poly-alkylene-imine, 4-grade ammonium salts, or cationic dyes, for example.
- leveling ability is used to mean a property enhancing plating growth from the bottom of recesses formed on the substrate surface.
- the substrate W finished with plating is transferred to the water-cleaning unit 218 when it is necessary to be water-cleaned, and is transferred to the etching process unit 220 (step 3 ).
- Etching solution used here may include additive agents for promoting etching such as pyrophoric acid, ethylene diamine, amino-carboxylic acid, EDTA, DTPA, imino-diacetic-acid, TETA, and NTA, or additive agents for suppressing etching such as 4-grade ammonium salts, a copper complex compound such as polymers, organic complexes or their derivatives, or additive agents for rendering corrosion potential of copper ignoble such as thiocarbamide or its derivatives.
- the base bath used here may comprise acids such as sulfuric acid, hydrochloric acid, sulfuric acid hydrogen peroxide, or hydrofluoric acid hydrogen peroxide, or alkalis such as ammonia hydrogen peroxide, but not be limited thereto.
- This etching process selectively etches the build-up portions of the copper layer to enhance flatness of the copper layer.
- CMP Chemical Mechanical Planarization
- the substrate W finished with etching is transferred to the water-cleaning unit 218 (step 5 ) when it is necessary so as to be water-cleaned, transferred to the cleaning/drying unit to be cleaned and dried (step 6 ), and returned to the cassette in the loading/unloading unit 210 by the first transfer assembly 222 (step 7 ).
- the plating process and etching process may be repeated to selectively etch the build-up portion of the copper film for every plating process, to thereby further enhance the flatness of the copper film. While this embodiment employs a continuous process of plating and etching performed within a same interconnect formation apparatus, these processes can be performed individually in each independent apparatuses.
- the electroplating unit and electrolytic etching unit are individually provided to have the same structure and are operated using different electrolytes by applying different polarity potentials between the substrate W and the electrode (anode or cathode).
- a single apparatus can be used for both processes by exchanging the polarity so that the electroplating unit can be dual-purposely used as an electrolytic etching unit.
- This apparatus is assembled on a generally rectangular space on a floor and comprises a first polishing unit 324 a and a second polishing unit 324 b confronting each other at one end of the space, and a pair of loading/unloading units at the other end for placing thereon substrate cassettes 326 a , 326 b for carrying substrates W such as semiconductor wafers.
- two transfer robots 328 a , 328 b are provided.
- a first plating unit (electroplating unit) 330 On one side of the transfer line, a first plating unit (electroplating unit) 330 , a copper film thickness inspection unit 332 , and a pre-plating process unit 334 having a reversing machine are provided.
- a rinsing/drying unit 336 On the other side of the transfer line, a rinsing/drying unit 336 , a second (electroless) plating unit 338 for forming a protection film and a cleaning unit 339 having a sponge roller are provided.
- a vertically movable pusher for delivering substrate W to and from the polishing units 324 a , 324 b are provided between the polishing units 324 a , 324 b and the transfer line.
- a semiconductor substrate W is prepared by: forming semiconductor devices on a semiconductor substrate 1 ; depositing a SiO 2 insulating film 2 on a conductive layer 1 a ; forming a contact hole 3 and a trench 4 for interconnects on the insulating film 2 by using a lithography/etching technique; forming a barrier layer 5 comprising Ta or TaN on the inner surface of the trench 4 ; and forming a seed layer 6 as a feeder layer for electroplating on the barrier layer 5 by sputtering or the like.
- the substrates W formed with the seed layer 6 are delivered from substrate cassettes 326 a , 326 b by the transfer robot 328 a one by one and are transferred to the first plating unit 330 .
- a copper layer 7 is deposited on the surface of the substrate W to fill the trench 4 .
- the substrate W is subjected to a hydrophilic treatment of the surface prior to plating. This process may be performed by using the plating unit 330 as an electrolytic etching unit by changing the polarity of the power supplied to etch the copper layer 7 surface as described above.
- the substrate W is rinsed or washed by the copper plating unit 330 , and may be dried if time allows.
- the substrate W is transferred to the film thickness inspection unit 332 to measure the thickness of the plated copper film 7 , reversed if necessary, and transferred to a pusher 324 adjacent to the polishing unit 324 a or 324 b.
- the surface of the substrate W is pressed against a polishing table while supplying polishing solution to the polishing surface of the table to polish the substrate surface. Polishing is finished when a finish detection monitor has detected an endpoint.
- the substrate W is then returned to the pusher 324 and washed by spraying deionized water.
- the substrate W is transferred to the cleaning unit 339 by the transfer robot 328 b for cleaning using a sponge roller, for example.
- This process provides an interconnect comprising seed layer 6 and a copper layer 7 in the insulating layer 2 , as shown in FIG. 12(C).
- the substrate W is transferred to the pretreatment unit 334 in which the substrate W is subjected to application of Pd catalyst or removal of oxides from exposed surfaces, and is transferred to the second plating unit 338 to provide electroless plating.
- a protection film 9 comprising a Co—W—P alloy film is selectively formed by the electroless plating process on an outer surface of the interconnect which has been exposed through the polishing process to thereby protect the interconnect.
- the thickness of the interconnect protection film is 0.1 ⁇ 500 nm, preferably 1 ⁇ 200 nm, and more preferably 10 ⁇ 100 nm.
- the substrate W is spin-dried through high speed rotation, and is extracted from the second plating unit 338 . Then, the substrate W is transferred to the cleaning unit 339 by the transfer robot 328 b to be cleaned with the sponge roller, and is transferred to the rinsing/drying unit 336 by the transfer robot 328 a . Then, after rinsing and drying the substrate W by the rinsing/drying unit 336 , the substrate W is returned to the same position of the substrate cassette 326 a , 326 b.
- FIG. 13 Another plating apparatus according to an embodiment of the present invention is shown in FIG. 13, in which the plating vessel 16 shown in FIGS. 1 and 2 is used to form bumps on the substrates W.
- the plating apparatus comprises: two cassette tables 112 for loading a cassette 110 containing substrates W such as semiconductor wafers; an aligner 114 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a spin-dryer 116 for drying the substrate W after plating through high speed rotation, which are arranged on a same circle.
- a substrate mounting/demounting unit 120 is provided along one tangential line of the circle for mounting or demounting the substrate W from the holder 118 placed on the unit
- a transfer unit 122 comprising a transfer robot is provided to transfer the substrate W between these units.
- the following units are provided in an linear alignment in the order: a stocker 124 for preserving or temporarily storing a substrate holder 118 ; a pre-wetting vessel 126 for wetting the substrate W by immersing the substrate W within a deionized water to enhance hydrophilicity of the surface of the substrate W; a pre-soaking vessel 128 for removing an oxide film of a high electrical resistance formed on a seed layer on the substrate surface by etching with a chemical agent such as sulfuric acid or hydrochloric acid; a first water-cleaning vessel 130 a for cleaning the substrate surface with deionized water; a blowing vessel 132 for dewatering the substrate W after cleaning; a second water-cleaning vessel 130 b ; and a plating unit 134 .
- the plating unit 134 comprises a plurality of plating vessels 16 shown in FIGS. 1 and 2 within an overflow vessel 136 , and each plating vessel 16 can contain a single substrate W for plating.
- each plating vessel 16 can contain a single substrate W for plating.
- a process of plating copper is described, while other metals or alloys such as nickel, solder, or gold can be plated in the same manner.
- a substrate holder transfer unit 140 is provided on one side of those units for transferring substrate holders 118 together with the substrate W held thereon.
- the substrate holder transfer unit 140 comprises; a first transporter 142 for transferring substrates W between the substrate mounting/demounting unit 120 and the stocker 124 ; and a second transporter 144 for transferring substrates W between the stocker 124 , pre-wetting vessel 126 , pre-soaking vessel 128 , water-cleaning vessels 130 a , 130 b , blowing vessel 132 , and the plating unit 134 .
- the first transporter 142 is movable as far as the water-cleaning vessel 130 a
- the movable range of the second transporter 144 is adjustable
- the second transporter 144 is optional and can be dispensed with.
- a puddle drive unit 146 is provided for driving puddles 34 (shown in FIGS. 1 and 2) arranged within each plating vessel 16 for agitating the plating solution 12 .
- the substrate mounting/demounting unit 120 comprises a flat mounting plate 152 laterally slidable along rails 150 , which can mount thereon two substrate holders 118 horizontally juxtaposed so that, after one of the substrate holder 118 has transferred substrate W to or from the substrate transfer unit 122 , the mounting plate 152 is laterally slid to allow the other substrate holder 118 to transfer a substrate W to or from the substrate transfer unit 122 .
- Substrates W are prepared, as shown in FIG. 14( a ), by depositing a seed layer 500 as a feeder on the surface of the substrate W, and, after coating a resist film 502 having a thickness H of 20 ⁇ 120 ⁇ m on the whole surface, forming apertures 502 a having a diameter D of 20 ⁇ 200 ⁇ m. Substrates W are stored in the cassette 110 so as to face the surface to be plated upward, and the cassette 110 is then mounted on the cassette table 112 .
- the substrate transfer unit 122 takes one substrate W out of the cassette 110 mounted on the table 112 and load it on the aligner 114 to align the orientation flat or notch to a predetermined direction.
- the substrate W is then transferred to the substrate mounting/demounting unit 120 by the substrate transfer unit 122 .
- the transporter 142 grasps two substrate holders 118 at a time with a grasp assembly (not shown) and elevates them, transfers them to the substrate mounting/demounting unit 120 , and rotate the substrate holder 118 , 90 degrees to a horizontal state. Then, the two substrate holders 118 are lowered and are placed concurrently on the mounting plate 152 of the substrate mounting/demounting unit 120 . At this time, a cylinder (not shown) is actuated to keep the substrate holder 118 open.
- the substrate holder transfer unit 140 grasps two substrate holders 118 at a time with the grasp assembly of the transporter 142 , and after elevating the holders 118 , transfers them to the substrate mounting/demounting unit 120 and rotate them 90 degrees to a vertical state, to thereby support them with the stocker 124 in a suspended manner for temporary storage.
- the above operations are sequentially repeated to mount the substrates W on the substrate holder 116 stored in the stocker 124 and suspend them in a certain position in the stocker 124 to temporarily store the substrate W.
- the other transporter 144 of the substrate holder transfer unit 140 grasps a pair of substrate holders 118 loaded with a substrate W and temporarily stored in the stocker 124 concurrently with a grasping assembly (not-shown), and after elevating them, transfers them to the pre-wetting vessel 126 , lowers them to dip into a wetting liquid such as deionized water contained in the pre-wetting vessel 126 for wetting the surface to enhance hydrophilicity.
- the wetting liquid is not limited to deionized water as long as it can improve hydrophilicity so as to wet the substrate surface and replace the air within fine recesses or holes.
- a substrate holder 118 loaded with a substrate W is transferred to the pre-soaking vessel 128 in the same manner as above, so that the substrate W is dipped in the chemical agent held in the pre-soaking vessel 128 such as sulfuric acid or hydrochloric acid for etching a high electrical resistance oxide film on the seed layer 500 surface to expose a clean metal surface. Further, the holder 118 holding a substrate W is transferred to the water-cleaning vessel 130 a in the same manner as above, to clean the substrate surface with deionized water held in the water-cleaning vessel 130 a.
- the chemical agent held in the pre-soaking vessel 128 such as sulfuric acid or hydrochloric acid for etching a high electrical resistance oxide film on the seed layer 500 surface to expose a clean metal surface.
- the substrate holder 118 is then transferred to the plating unit 134 and is supported in the plating vessel 16 a suspended manner.
- the transporter 144 of the substrate holder transfer unit 140 operates the above steps repeatedly to transfer the holders 118 and sequentially suspend them in a predetermined position within the plating vessel 16 .
- the plating vessel 16 is readily filled with a plating solution, which may be filled after finishing installation of the substrate holders 118 .
- the substrate holder 118 is then transferred to the water-cleaning vessel 130 b in the same manner as above, and immersed in the deionized water held in the water-cleaning vessel 130 b to clean the surface. Then, the substrate holder 118 holding the substrate W is transferred to the blowing vessel 132 and water droplets on the substrate holder 118 is removed by air blow. Then, the substrate holder 118 is returned to the stocker 124 at a predetermined position to be suspended.
- the other transporter 142 of the substrate holder transfer unit 140 holds two of the substrate holders 118 at a time, which hold respective substrates W and have been returned to the stocker 124 after plating, and places them on the mounting plate 152 of the substrate mounting/demounting unit 120 . Then, the substrate holder 118 on a central side is opened, and the substrate W finished with plating is demounted by substrate transfer unit 122 and is transferred to the spin-dryer 116 to be dewatered with a high speed rotation of the spin-dryer 116 after rinsing, and is returned to the cassette 110 by the substrate transfer unit 122 . After returning substrate W held by one of the substrate holder 118 or simultaneously with the returning process, the mounting plate 152 is slid laterally for returning the substrate W held by the other substrate holder 118 to the cassette 110 after rinsing and spin-drying.
- the mounting plate 152 is returned to an initial state, and the substrate holders 118 removed of the substrate W is returned to the stocker 124 , and another pair of substrate holders 118 holding the substrate W finished with plating are held by the transporter 142 and with a grasp assembly and are placed on the mounting plate 152 of the substrate mounting/demounting unit 120 to repeat the same operation.
- the substrate W finished with plating are demounted from the substrate holder 118 , spin-dried and returned to the cassette 110 , the operation is finished.
- the substrate W is provided with a plated film within the openings 502 a formed on the resist film 502 , as shown in FIG. 14( b ).
- the spin-dried substrates W are immersed into a solvent such as acetone held at a temperature of 50 ⁇ 60° C. to remove the resist films 502 formed on the substrate W as shown in FIG. 14( c ).
- the substrate W is further subjected to a process for removing the exposed seed layer 500 as shown in FIG. 14( d ).
- the plated film is reflowed to form a bump which has been rounded by surface tension.
- the substrate W is annealed at a temperature higher than 100° C. to remove residual stress within the bump.
- FIG. 15 is a plan view of another embodiment of the plating apparatus according to the present invention for forming bumps or the like.
- the plating apparatus comprises: two cassette tables 410 for loading a cassette containing substrates W such as semiconductor wafers; an aligner 412 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a rinser-dryer 414 for rinsing and drying the substrate W after plating through high speed rotation.
- a first transfer robot 416 is provided capable of traveling between the two cassette tables 410 , aligner 412 , and rinser-dryer 414 to transfer substrates W between them.
- the first transfer robot 416 comprises a vacuum suction type hand or a drop-in type hand to deliver substrate W in a horizontal state.
- this embodiment comprises four plating units 420 serially arranged.
- Each of these plating units 420 comprises a plating vessel 422 and water-cleaning vessel 424 contiguously arranged to each other, and a substrate holder 426 arranged above these plating vessel 422 and water-cleaning vessel 424 for detachably holding substrates W in a vertical state.
- the substrate holder 426 is vertically movable by a vertical drive section 428 and laterally movable by a lateral drive section 430 .
- an aligner 412 , a rinser-dryer 414 , and a second transfer robot 432 for delivering substrates W between the substrate holder 426 of each plating unit 134 are provided.
- the second transfer robot 432 comprises a hand for holding a substrate W with a mechanical chuck and having a reversing assembly 434 for tilting a substrate W between a horizontal state and a vertical state, so that it holds substrates W in a horizontal state when delivering between the aligner 412 and rinser-dryer 414 , and in a vertical state between the substrate holder 426 .
- each plating vessel 422 an anode 436 is provided at a predetermined position to confront the substrate W held by the substrate holder 426 .
- Each plating vessel 422 further comprises puddles 440 arranged between the substrate W and anode 436 to reciprocatingly move parallel to the substrate W to equalize the plating solution flow, and a regulation plate 442 having a central aperture of a size corresponding to the substrate W for lowering potentials about the periphery of the substrate W to equalize thickness of the plated film on the substrate W.
- a nozzle as shown in FIGS. 1, 2 and 5 is provided to eject plating solution toward the substrate W held by the substrate holder 426 .
- Substrates W are prepared, as shown in FIG. 14( a ), by depositing a seed layer 500 as a feeder on the surface of the substrate W, and, after coating a resist film 502 having a thickness H of 20 ⁇ 120 ⁇ m on the whole surface, forming apertures having a diameter D of 20 ⁇ 200 ⁇ m. Substrates W are stored in the cassette so as to face the surface to be plated upward, and the cassette is then mounted on the cassette table 410 .
- the first transfer robot 416 takes one substrate W out of the cassette mounted on the table 410 and put it on the aligner 412 to align the orientation flat or notch to a predetermined direction.
- the aligned substrate W is then tilted in the reversing assembly 434 from a horizontal state to a vertical state, and is delivered to the substrate holder 426 of one of the plating units 420 .
- transfer of the substrate W is performed at a region above the water-cleaning vessel 424 .
- Substrate holder 426 is elevated by the vertical drive section 428 , and positioned beside the water-cleaning vessel 424 by lateral drive section 430 to receive the substrate W from the second transfer robot 432 in a vertical state.
- the substrate holder 426 is moved to the plating vessel 422 by the lateral drive section 430 .
- the plating vessel 422 is readily filled with a plating solution.
- the substrate holder 426 is lowered by the vertical drive section 428 and the substrate W held by the substrate holder 426 is immersed into the plating solution within the plating vessel 422 .
- plating voltage between the anode 436 and the substrate W moving the puddles 440 reciprocatingly parallel to the substrate surface, and concurrently ejecting the plating solution from the nozzles 48 provided on at least one of the puddles 440 or regulation plate 442 , the surface of the substrate W is plated.
- the substrate holder 426 is transferred to the water-cleaning vessel 424 by the lateral drive assembly 430 , and lowered into the water-cleaning vessel 424 to be washed by deionized water.
- the washing process is performed by ejecting deionized water toward the substrate W from nozzle (not shown) arranged within the water-cleaning vessel 424 while lifting the substrate W upward within the vessel 424 .
- Another possible washing process is to rapidly pull up the substrate holder 426 through a deionized water which is readily supplied to the water-cleaning vessel 424 in advance. It is naturally possible to combine both processes.
- the second transfer robot 432 receives the washed substrate W from the substrate holder 426 in a vertical state at a region above the water-cleaning vessel 424 , rotates it 90 degrees to a horizontal position, and transfers it to the rinser-dryer 414 for loading there. After rinsing and dewatering by high speed rotation of the rinser-dryer 414 , the substrate W is returned to the cassette loaded on the cassette table 410 to finish operation. Thus, the substrate W is provided with a plated film 504 within the openings 502 a formed on resist films 502 , as shown in FIG. 14( b ).
- the plating apparatus comprises: one or plural cassette tables 610 for loading a cassette containing substrates W such as semiconductor wafers; an aligner 612 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a rinser-dryer 614 for rinsing and drying the substrate W through high speed rotation after plating.
- a first transfer robot 616 is provided between the one or plural cassette tables 610 , aligner 612 , and rinser-dryer 614 which is capable of traveling and transferring substrates W between these units.
- the first transfer robot 616 comprises a vacuum suction type hand or a drop-in type hand to deliver substrate W in a horizontal state.
- the plating apparatus comprises four plating units 620 serially arranged. The number or arrangement of these plating units 620 can be optionally selected. In front of these plating units 620 , an aligner 612 , a rinser-dryer 614 , and a second transfer robot 632 for delivering substrates W between the substrate holder 634 of each plating unit 620 are provided.
- the second transfer robot 632 comprises a hand 626 for holding a substrate W by a mechanical chuck and having a reversing assembly 624 for tilting a substrate W between a horizontal state and a vertical state, so that it holds substrates W in a horizontal state when delivering to the aligner 612 and rinser-dryer 614 , and in a vertical state to the substrate holder 634 .
- each plating unit 620 comprises a plating vessel 632 mounted on a pedestal 630 and a substrate holder 634 arranged in a confronting position to the plating vessel 632 .
- the substrate holder 634 is fixed on an upper surface of a slide plate 638 laterally slidable along rails 636 via a bracket 640 .
- the plating vessel 632 comprises: a vessel body 642 shaped as a box opening upward and having a plating solution inlet port 642 a , a plating solution inlet/drain port 642 b , and a front aperture 642 c formed on a front surface facing the substrate holder 634 ; and an overflow vessel 643 as shown in FIG. 21 provided on the upper portion of the vessel body 642 .
- the vessel body 642 is partitioned by a partition plate 644 having a plating solution flow-in port 644 a and a plating solution flow-through port 644 b .
- anode 636 is vertically arranged by being held by an anode support 648 .
- a weir member 652 having a rectangular box shape and opening in both upward and downward directions is provided vertically movable and to surround the anode 636 when it is lowered.
- a seal member 650 is attached to the lower edge of the weir member 652 .
- the seal member 650 pressingly contacts the upper surface of the partition plate 644 when the weir member 652 is lowered to define an enclosed reservoir chamber 654 within the vessel body 642 .
- This reservoir chamber 654 is used to reserve plating solution even when the apparatus is not plating, and the anode 636 is immersed in the reserved plating solution within the reservoir chamber 654 to prevent it from drying. This prevents a black film deposited on the surface of the anode 636 from drying, being oxidized, peeling off and sticking to the plating surface of the substrate W.
- the weir member 652 is lifted up when the apparatus is in operation to open the front face of the anode 636 .
- a regulation plate 656 having a central aperture 656 a of a size conforming to the size of the substrate W is arranged between the weir member 652 and the front aperture 642 c of the vessel body 642 for lowering the potentials at the periphery of the substrate surface held by the holder 634 to provide more uniform film thickness distribution.
- Nozzles 662 are provided on the surface of the regulation plate 656 at locations proximate to the central aperture and along a circumferential direction, for example, for ejecting plating solution toward the center of the substrate W held by the holder 634 .
- Puddles 640 are arranged between the weir member 652 and aperture 642 c of the vessel body 642 to reciprocatingly move parallel to the substrate W held by the substrate holder 634 by being driven by the puddle drive motor to thereby control (or disturb) the plating solution flow between the regulation plate 656 and the substrate W held by the substrate holder 634 .
- a nozzle head 664 is provided within the vessel body 642 and in front of the aperture 642 c , which extends vertically and comprises nozzles 662 at a predetermined pitch along the longitudinal direction.
- the nozzle head 664 is reciprocatingly movable parallel to the aperture 642 c by a nozzle head drive motor.
- the nozzle head 664 is retracted at a standby position beside the substrate holder 634 while plating is operated to avoid interference with the fore and aft movement of the substrate holder 634 , and when the plating is finished, moves forward ahead of the substrate holder 634 to move reciprocatingly and parallel to the plating surface of the substrate W while ejecting cleaning liquid such as deionized water, for example, and inert gas such as N 2 .
- the substrate W is showered by the ejected deionized water and inert gas and is washed away of plating solution remaining on the surfaces of the substrate W and substrate holder 634 , and finally, the remaining deionized water is removed from the surface by being blown away by the inert gas.
- an intermediate plate 666 and a surface plate 669 are laminated or built-up at the periphery of the aperture 642 c of the vessel body 642 .
- the intermediate plate 666 comprises an annular communication groove 666 a , which communicates with a vacuum source (not shown), and the surface plate 669 comprises a suction port 668 a communicating with the communication groove 666 a and attached with an annular seal plate 668 .
- the plating vessel 632 is provided with a plating solution regulation and supply system as shown in FIG. 21.
- the plating solution regulation and supply system comprises: a plating solution supply tank 670 ; a plating solution supply system 672 and an auxiliary plating solution supply system 674 for supplying and circulating the plating solution within the plating solution supply tank 670 to the plating vessel 632 ; a plating solution regulation system 676 for circulating the plating solution within the plating solution supply tank 670 for regulation of a plating bath by controlling the temperature or removing impurities.
- the plating solution supply system 672 comprises: a main supply line 678 extending from the plating solution supply tank 670 and connected to the plating solution inlet port 642 a of the vessel body 642 ; and a return line 680 communicating the overflow vessel 643 and plating solution supply tank 670 .
- the main supply line 678 comprises a feeder pump 682 , a filter 684 , a first flow controller 688 a , a shutter valve 686 a , and a second flow controller 686 b .
- a branch line 690 is provided to bifurcate from the main supply line 678 at an upstream of the shutter valve 686 a and communicates to plating solution nozzles 659 arranged on the inside of the regulation plate 656 through a shutter valve 686 b and a flow controller 668 c .
- the plating solution supply system 672 further comprises: a rapid supply line 692 connected to the main supply line 678 , comprising a shutter valve 686 c , and connected to the plating solution inlet/drain port 642 b of the vessel body 642 ; and a rapid drain line 694 directly connecting the plating solution inlet/drain port 642 b of the vessel body 642 and the plating solution supply tank 670 and comprising a shutter valve 686 d.
- the auxiliary plating solution supply system 674 comprises an auxiliary supply line 696 bifurcating from the main supply line 678 at an upstream of the shutter valve 686 a and communicates to the plating solution flow-in port 644 a of the partition plate 644 through a shutter valve 686 e , so that the rapid drain line 694 works dual-purposely as a return line 696 .
- the plating solution regulation system 676 comprises a circulation line having a circulation pump 700 , a heat-exchanger 702 , and a filter 704 .
- a circulation pump 700 a heat-exchanger 702 , and a filter 704 .
- the plating solution within the plating solution supply tank 670 is filtered by passing through the filter 704 as the circulation pump 700 is operated.
- the substrate holder 634 is constructed to move back and forth along a rail 712 in accordance with the activation of a pushing cylinder 710 arranged between the slide plate 638 and the bracket 640 .
- the substrate holder 634 comprises: a disc-shaped supporting head 714 of approximately the same size with the substrate W to be plated; and a seal unit 716 arranged in front of the supporting head 714 on a side facing the plating vessel 632 , and detachably attached to the opening end of a casing 718 which surrounds the supporting head 714 .
- the supporting head 714 is connected to a piston rod 721 of a horizontally arranged cross drive cylinder 720 which is fixed to the casing 718 , and comprises one or more guiding rods 722 connected thereto at positions along a circumferential line. These guiding rods 722 are supported by a slide bearing 724 provided on the casing 718 so as to be movable in a cross direction to the supporting head 714 . Thus, the supporting head 714 is moved back and forth while being guided by the guiding rods 722 .
- One side of the supporting head 714 facing the plating vessel 632 comprises a flat surface 714 a which is formed with a recess 714 b for receiving a hand 626 of the transfer robot 622 , which extends horizontally and employs vacuum chucking for holding a substrate W for example.
- a plurality of holder pins 728 are arranged at locations to surround the periphery of the supporting head 714 , whose tip ends protrude from the flat surface 714 a toward the plating vessel 632 and horizontally extend rearward.
- the inner surface of the holder pin 728 protruding from the flat surface 714 a is provided with a recess 714 b for receiving the outer peripheral edge of the substrate W so as to temporarily position the substrate W while preventing displacement.
- the proximal end of the holder pin 728 is connected to a temporary positioning cylinder 730 provided on the rear surface of the supporting head 714 , so that the temporary positioning cylinder 730 drives the holder pin 728 to move along a radial direction of the supporting head 714 .
- the transfer robot 622 holds the substrate W with the vacuum chucking type hand 626 and transfers it to the front surface of the supporting head 714 . Then, the robot moves the hand 626 toward the supporting head 714 and locates it within the recess 714 b close to the flat surface 714 .
- the holder pins 728 are moved radially inside the supporting head 714 so that the peripheral edge of the substrate W is received in the recess 714 b .
- the hand 626 is extracted so that the substrate W is held in front of the supporting head 714 by the holder pins 728 .
- the seal unit 716 comprises a generally cylindrical support member 732 , which can be attached or detached to the opening of the casing 718 by using, for example, a cramp type fastener 734 (shown in FIG. 19) with a single manipulative action.
- a cramp type fastener 734 shown in FIG. 19
- expendable items such as seal ring 740 or seal member 736 can be easily and rapidly exchanged together with the cathode 762 .
- the seal unit 716 can be attached/detached by using a plunger for example, to exchange the seal ring 740 or seal member 736 more easily.
- the annular seal member 736 is provided on the front surface of the support member 732 facing the plating vessel 632 , and at a position opposite to the seal plate 668 provided on the surface plate 669 .
- the seal member 736 is formed with a pair of projections 736 a , 736 b at the inner and outer edges.
- these projections 736 a , 736 b abut with the seal plate 668 so that the space defined by the projections 736 a , 736 b communicates with the suction port 668 a .
- the aperture 642 c of the vessel body 642 is water-tightly sealed so as to block the aperture 642 c with the substrate holder 634 .
- the support member 732 of the seal unit 716 comprises a cylindrical portion of a size through which the supporting head 714 holding the substrate W can pass, and on which the annular seal ring 740 and cathode electrodes 742 are integrally attached. That is, the seal ring 740 is pressed against the periphery of the substrate W, which is temporarily held by the supporting head 714 , so as to seal the region.
- the seal ring 740 is fixed by being supported from both sides of the outer periphery with the front surface of the support member 732 facing the plating vessel 632 and a stopper ring so as to project inside the cylindrical portion.
- the inner edge of the seal ring 740 is formed to cuspidally project toward the supporting head 714 .
- the cathode electrodes 742 are elastically pressed against the periphery of the substrate W which is temporarily held by the supporting head 714 , thereby allowing to feed electricity to the seed layer 500 formed on the surface of the substrate W.
- the cathode electrodes 742 are located at circumferentially spaced positions at a predetermined pitch, and the edge facing the plating vessel 632 is circularly curved toward the inside of the support member 732 , and the curved portions are covered by the seal ring 740 .
- the seed layer 800 formed on the surface of the substrate W contacts with the cathode electrodes 742 at the periphery of the substrate W, and further progress of the supporting head 714 makes the cathode electrodes 742 bend to secure the contact as well as the periphery of the substrate W be pressed toward the seal ring 740 to provide a water-tight seal.
- the substrate W is in close contact with the flat surface 714 a of the supporting head 714 to be fixed thereto.
- the cathode electrodes 742 are located outside the seal formed by the seal ring 740 so as to prevent the cathode electrodes 742 from contacting the plating solution.
- the supporting head 714 of the substrate holder 634 is retracted away from the plating vessel 632 , and the substrate W is transferred between the substrate holder 634 and the seal unit 716 , which is held by the hand 626 of the transfer robot 622 (shown in FIG. 16) through suction force or by mechanical chucking and vertically arranged after reversing. Subsequently, the hand 626 holding the substrate W with a vacuum suction force, for example, is transferred to the supporting head 714 and brought into the recess 714 b of the supporting head 714 to make the substrate W approach to the flat surface 714 a of the supporting head 714 , as shown in FIG. 24( b ).
- FIG. 17 shows this state.
- the hand 626 releases the substrate W and is retracted from the substrate holder 634 .
- the cross drive cylinder 720 is actuated to move the supporting head 714 toward the plating vessel 632 .
- the seed layer 800 As shown in FIG. 24( d ), the seed layer 800 , as shown in FIG. 27, formed on the substrate W is contacted by the cathode electrode 742 at the periphery of the substrate W. As the supporting head 714 further moves forward, the periphery of the substrate W is pressed against the seal ring 740 to provide a water-tight seal and, concurrently, is secured through a close contact with the flat surface 714 a of the supporting head 714 .
- the weir member 652 is lowered so as to press the seal member 650 at the lower edge against the upper surface of the partition plate 644 , to thereby define a reservoir chamber 654 with the weir member 652 .
- Plating solution is introduced through the plating solution auxiliary supply system 674 to the reservoir chamber 654 and immerses the anode 636 in the plating solution within the reservoir chamber 654 before starting plating. This process prevents the anode 636 and the a black film deposited on the surface of the anode 636 from drying, being oxidized, peeling off and sticking to the plating surface of the substrate W.
- the plating solution introduced to the reservoir chamber 654 and having overflowed the weir member 652 is returned to the plating solution supply tank 670 through the return line 698 so as to circulate the plating solution within the reservoir chamber 654 even when the apparatus is not in operation. By doing so, the plating solution within the reservoir chamber 654 does not suffer from variation of composition or deterioration.
- the pushing cylinder 710 is actuated to move the substrate holder 634 toward the plating vessel 632 as shown in FIG. 24( e ), and when the projections 736 a , 736 b abut with the seal plate 668 (cell body 642 ) provided on the surface plate 669 , the space defined by the projections 736 a , 736 b are vacuumed to provide a water-tight seal to the aperture 642 c of the vessel body 642 to block there.
- the substrate holder 634 is continuously pressed at a constant pressure against the vessel body 642 with the pushing cylinder 710 .
- the state of the plating vessel 632 is shown in FIG. 25( b ).
- the plating solution is rapidly supplied into the vessel body 642 through the rapid supply line 692 of the plating solution supply system 672 as shown in FIG. 25( c ).
- the weir member 652 is lifted as shown in FIG. 25( d ), and the anode 636 is confronted by the surface of the substrate W held in the substrate holder 634 .
- the plating power source applies plating voltage between the anode 636 and the cathode 762 which conducts to the seed layer 800 (see FIG. 27), and the predetermined amount of plating solution is supplied to the interior of the vessel body 642 , through the plating solution supply system 672 .
- plating solution is supplied to the nozzles 662 provided on the regulation plate 656 through the branch line 690 so as to eject the plating solution toward the substrate W held by the substrate holder 634 , and the puddles 660 (see FIG. 21) are reciprocatingly moved parallel to the substrate surface.
- the plating solution having overflowed to the overflow vessel 643 is returned to the plating solution supply tank 670 through the return line 680 for circulation to thereby plate the substrate surface.
- the state here is shown in FIG. 18.
- the plating solution within the vessel body 642 except within the reservoir chamber 654 is rapidly drained through the rapid drain line 694 by opening the shutter valve 686 d , as shown in FIG. 26( c ). This rapid drainage decreases waiting time necessary for transition to a following plating process.
- the pushing cylinder 710 is reversely actuated to move the substrate holder 634 away from the plating vessel 632 , and the nozzle head 664 is moved from the retracted position and parallel to the surface of the substrate W held by the substrate holder 634 , and cleaning liquid such as deionized water is ejected from the nozzles 662 toward the substrate surface to rinse off the plating solution remaining on the substrate W.
- the deionized water is removed by blowing inert gas such as N 2 gas.
- the plated substrate W is delivered to the hand 626 of the transfer robot 622 by reversely performing the processes described above.
- FIGS. 19 and 20 show a state where the substrate holder 634 is subjected to maintenance.
- the substrate holder 634 is slid together with the slide plate 638 along the rail 712 to a lateral position of the plating vessel 632 , so that the space necessary for the maintenance is reserved to facilitate operations such as exchanging the seal unit 716 or maintaining the substrate holder 634 .
- Substrates W are prepared, as shown in FIG. 27( a ), by depositing a seed layer 800 as a feeder on the surface of the substrate W, and, after coating a resist film 802 having a thickness H of 20 ⁇ 120 ⁇ m on the whole surface, forming apertures having a diameter D of 20 ⁇ 200 ⁇ m. Substrates W are stored in the cassette so as to face the surface to be plated upward, and the cassette is then mounted on the cassette table 610 .
- the first transfer robot 616 takes one substrate W out of the cassette mounted on the table 610 and put it on the aligner 612 to align the orientation flat or notch to a predetermined direction.
- the second transfer robot 622 takes the aligned substrate W from the aligner 612 and tilts the substrate W 90 degrees from a horizontal position to a vertical position with the reversing assembly 624 and delivers the substrate W to a substrate holder 634 of one of the plating units 620 .
- the substrate W held by the substrate holder 634 is plated, washed by deionized water, and air-blown, and is delivered to the second transfer robot 622 .
- the second transfer robot 622 tilts the substrate W 90 degrees from a vertical position to a horizontal position and transfers the substrate W to the rinser-dryer 614 to place it.
- the rinser-dryer 614 rinses and dewaters the substrate W and returns it to the cassette loaded on the table 610 to finish the operation.
- the substrate W is formed with a deposited film 804 developed within the aperture 802 a of the resist film 802 , as shown in FIG. 27( b ).
- the spin-dried substrates W are immersed into a solvent such as acetone held at a temperature of 50 ⁇ 60° C. to remove resist films 802 formed on the substrate W as shown in FIG. 27( c ).
- the substrate W is further subjected to a process for removing the exposed and unnecessary seed layer 800 as shown in FIG. 27( d ).
- the plated film 804 is reflowed to form a bump 806 which has been rounded by surface tension, as shown in FIG. 27( e ).
- the substrate W is annealed at a temperature higher than 100° C. to remove residual stress within the bump 806 .
Abstract
The present invention is directed to a plating apparatus and method in which bubbles generated at the plating surfaces are easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved. The plating apparatus comprises a cassette table for loading a cassette in which a substrate having a plating surface is contained. An aligner for aligning the substrate, a rinser-dryer for rinsing and drying the substrate, and a plating unit for plating the substrate are also provided. The plating unit comprises a plating vessel containing a plating solution, a holder for holding the substrate to immerse the substrate in the plating solution in the plating vessel. The plating surface is exposed to a nozzle which ejects the plating solution toward the plating surface.
Description
- 1. Field of the Invention
- The present invention relates to an apparatus and method for plating a substrate, and more particularly to an apparatus and method used for plating metal films on a surface of a substrate such as a semiconductor wafer having fine interconnection grooves, holes or apertures of resist films thereon, or for forming solder bumps or protruding electrodes for electrically connecting to electrodes of semiconductor chip packages.
- 2. Description of the Related Art
- In a TAB (Tape Automated Bonding) process or “flip-chip” process, the surface of a semiconductor chip having interconnects is formed with bumps or protruding electrodes comprised of gold, copper, solder, or nickel, or a layered structure of the above-mentioned materials, for electrically connecting with other chip package electrodes or TAB electrodes.
- Such bumps can be formed by processes such as electroplating, vapor deposition, printing, and ball-bumping. Recent trends of increasing number in I/O terminals on semiconductor chips, and smaller pitches of interconnections have lead to a wide use of electroplating, which can provide a fine structure metallization and relatively stable operation.
- Electroplating processes can be generally categorized in two types; a fountain type or cup type process in which a substrate such as a semiconductor wafer is plated while the surface to be plated faces downward and a plating solution flows upward to metallize the surface; and a dip type process in which the substrate is vertically placed in a plating vessel (container, cell, or the like) and the solution is supplied from the bottom to overflow from the top of the plating vessel.
- FIG. 28 shows an example of a conventional dip type electroplating unit. The electroplating unit comprises: a
substrate holder 10 for detachably holding a substrate W such as semiconductor wafer; aplating vessel 16 containing aplating solution 12, in which the substrate W supported by asubstrate holder 10 and ananode 14 are immersed so as to confront each other; and apower source 18 for applying plating voltage between theanode 14 and feeder layer (seed layer) formed on the surface to be plated of the substrate W to supply plating current. Anoverflow vessel 22 is provided beside theplating vessel 16 for receiving aplating solution 12 which has flown over an upper edge of anoverflow weir 20 of theplating vessel 16. Theoverflow vessel 22 and theplating vessel 16 is communicated through acirculation line 24 provided with acirculation pump 26, athermostat unit 28, and afilter 30. Thus, theplating solution 12 driven by thecirculation pump 26 is supplied to and fills theplating vessel 16, and then overflows theweir 20 to flow into theoverflow vessel 22 and returns to thecirculation pump 26 for circulation. - With the plating unit, and by supplying the
plating solution 12 into theplating vessel 16 from the bottom portion to overflow theweir 20, arranging thesubstrate holder 10 in theplating solution 12 within theplating vessel 16 so as to confront theanode 14, and applying prescribed plating voltage between theanode 14 and the substrate W, a plated film is formed on the surface of the substrate W. - A plurality of puddles (agitating rods) are vertically suspended from a lower surface of a
puddle shaft 32, which is arranged above theplating vessel 16, horizontally between thesubstrate holder 10 and theanode 14, and parallel to their surfaces. The puddles are reciprocated horizontally in a direction parallel to the substrate W via thepuddle shaft 32 to agitate theplating solution 12 within theplating vessel 16, so as to facilitate the formation of a plating film with uniform thickness. - Also, the
substrate holder 10 used in the conventional dip type electroplating unit can detachably holds the substrate W while sealing the peripheral edge surface and the rear surface to expose the front surface to be plated. The substrate W is immersed in theplating solution 12 together with the holder for plating. - It is necessary to securely seal the peripheral portion of the substrate to prevent the plating solution from infiltrating to the rear surface of the substrate which confront the surface to be plated when the holder is immersed into the plating solution. A conventional substrate holder comprises a pair of supports (holding members) which are open-and closeable to each other, and one support is provided with a fixer ring. The substrate holder is used to hold a substrate by driving the fixer ring to rotate, while the substrate is held between the supports, to push the one support toward the other so that the a seal ring attached to the one support is pressed against the peripheral region of the substrate surface for sealing.
- When the substrate is subjected to a series of steps including plating and other accompanying processes, the substrate is held by the holder and the holder having the substrate is transferred to plating or processing vessels, and the substrate is immersed into the plating solution or other processing solutions together with the holder.
- The first object of this invention is to provide a plating apparatus and method in which bubbles generated at the plating surfaces are easily removed and the uniformity of the thickness of the plated film within the plated surface can be improved by controlling the flow of the plating solution within the plating vessel.
- Another object of the invention is to provide a plating apparatus and method which can plate a substrate while the peripheral portion is securely sealed, which is suitable for a small number and small lot production, and can facilitate to produce a compact plating apparatus.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with one aspect of the present invention comprises: a cassette table for loading a cassette containing therein a substrate; an aligner for aligning the substrate; a rinser-dryer for rinsing and drying the substrate; and a plating unit for plating the substrate, the plating unit comprising a plating vessel containing a plating solution, a holder for holding the substrate while being immersed in the plating solution in the plating vessel so as to expose the plating surface to the plating solution, and a nozzle for ejecting the plating solution toward the plating surface.
- The nozzle may be movable parallel to the plating surface.
- The nozzle may be provided between an anode placed within the plating vessel to confront the plating surface, and the nozzle may be provided between the anode and the plating surface.
- The nozzle may be provided on a puddle, which is movably arranged within the plating vessel for agitating the plating solution within the plating vessel.
- The nozzle may be provided on a regulation plate arranged between an anode placed in the plating vessel and the plating surface.
- An ejecting angle of the nozzle relative to the plating surface may be adjustable.
- The nozzle may be supplied with a plating solution within the plating vessel circulated by a circulation line.
- The nozzle may be provided with a flow controller for controlling a flow rate of the plating solution ejected by the nozzle.
- The nozzle may comprise a nozzle assembly comprising a plurality of nozzles.
- A method of plating a substrate having a plating surface to be plated in accordance with one aspect of the present invention comprises: holding the substrate with a substrate holder; immersing the holder in a plating solution contained in a plating vessel so as to expose the plating surface to the plating solution; placing a nozzle in the plating vessel to confront to the plating surface; ejecting a plating solution from the nozzle toward the plating surface.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with another aspect of the present invention comprises: a plating vessel containing a plating solution; a holder for holding the substrate while exposing the plating surface to the plating solution within the plating vessel; a nozzle provided in the plating vessel to confront to the plating surface for ejecting a plating solution toward the plating surface.
- The nozzle may be movable relative to the plating surface.
- The nozzle may be arranged to eject the plating solution at a substantially right angle relative to the plating surface.
- The nozzle may be arranged to eject the plating solution at an oblique angle relative to the plating surface.
- An apparatus for plating a substrate having a plating surface to be plated in accordance with another aspect of the present invention comprises: a plating vessel accommodating a plating solution and an anode therein and having a lateral opening; a substrate holder for holding the substrate while exposing the plating surface to the plating solution within the plating vessel and sealing the substrate to prevent infiltration of plating solution to a surface of the substrate other than the exposed plating surface; and a holder driving assembly for driving the substrate holder to a position where the plating surface covers the opening of the plating vessel.
- The substrate holder may be laterally slidable.
- The plating vessel may comprise a weir member for confining a reservoir surrounding the anode within the plating vessel, which can contain plating solution therein for immersing the anode.
- The apparatus may further comprise an auxiliary plating solution supply system for circulating the plating solution within the reservoir chamber.
- The apparatus may further comprise a rapid drain system for rapidly draining plating solution from the plating vessel.
- The apparatus may further comprise a nozzle for ejecting plating solution toward the plating surface of the substrate held by the substrate holder.
- The substrate holder may comprise a detachable seal unit comprising a seal ring and a cathode integrated together.
- The seal unit may comprise a seal member for water-tightly sealing the opening of the plating vessel.
- A method of plating a substrate having a plating surface to be plated, the method comprising: accommodating a plating solution and an anode in a plating vessel having a lateral opening; holding the substrate with a substrate holder while exposing the plating surface to the plating solution within the plating vessel and sealing the substrate to prevent infiltration of plating solution to a surface of the substrate other than the exposed plating surface; and driving the substrate holder to a position where the plating surface covers the opening of the plating vessel.
- The plating vessel may comprise a weir member for confining a reservoir surrounding the anode within the plating vessel, the method comprising immersing the anode by introducing plating solution within the reservoir.
- The method may further comprise rapidly draining plating solution from the plating vessel after plating is finished.
- FIG. 1 is a vertical cross-sectional view of an embodiment of the present invention applied to an electroplating unit;
- FIG. 2 is a plan view of the plating apparatus shown in FIG. 1;
- FIG. 3 is an enlarged view of another embodiment of a nozzle;
- FIG. 4 is a plan view of another embodiment of the present invention applied to an electroless plating unit;
- FIG. 5 is a vertical cross-sectional view of another embodiment of the present invention applied to an electroplating unit;
- FIG. 6 is a plan view of a substrate plating apparatus having a plating unit according to an embodiment of the present invention;
- FIG. 7 is a schematic view showing airflow within the substrate plating apparatus of FIG. 6;
- FIG. 8 is an embodiment of an interconnect formation apparatus having an electroplating unit and electrolytic etching unit according to the present invention;
- FIG. 9 is a flow chart showing a step flow in the interconnect formation apparatus of FIG. 8;
- FIG. 10 is a cross-sectional view schematically showing the process of plating a substrate;
- FIG. 11 is a plan view of a semiconductor manufacturing apparatus having an electroplating apparatus and an electroless plating apparatus according to an embodiment of the present invention;
- FIGS.12(a) to 12(c) are cross-sectional views showing the process of making a semiconductor device;
- FIG. 13 is a plan view of another plating apparatus having an electroplating unit;
- FIG. 14 is a cross-sectional view schematically showing the process of plating a bump on a substrate;
- FIG. 15 is a plan view of another plating apparatus having an electroplating unit;
- FIG. 16 is a plan view of another substrate plating apparatus having a plating unit according to an embodiment of the present invention;
- FIG. 17 is a schematic view showing a plating unit when a substrate is inserted in the substrate holder;
- FIG. 18 is a schematic view showing a plating unit when it is plating a substrate;
- FIG. 19 is a schematic rear view showing a plating unit during maintenance;
- FIG. 20 is a schematic front view showing a plating unit during maintenance;
- FIG. 21 is a view showing a cross section of a plating vessel and a flow diagram of a plating solution regulation supply system;
- FIG. 22 is a partial enlarged view of FIG. 21;
- FIG. 23 is a vertical cross-sectional view showing a substrate holder;
- FIGS.24(a) to 24(e) are schematic views showing the process of holding a substrate with a substrate holder;
- FIGS.25(a) to 25(d) are schematic views showing the process of preparing for plating a substrate while blocking an opening of a substrate plating vessel;
- FIGS.26(a) to 26(d) are schematic views showing the process of plating a substrate while blocking an opening of a substrate plating vessel;
- FIGS.27(a) to 27(e) are schematic views showing the process of plating a bump on a substrate; and
- FIG. 28 is a schematic view showing a conventional substrate plating unit.
- Preferred embodiments of the present invention will be described by referring to the attached drawings.
- FIGS. 1 and 2 show an embodiment of the invention applied to an electroplating unit. The electroplating unit comprises: a vertically
movable substrate holder 10 for detachably holding a substrate W to be plated such as a semiconductor wafer; a plating vessel or a platingcell 16 for accommodating aplating solution 12, a substrate W vertically held by thesubstrate holder 10, and an anode 14 (positive electrode) so that the substrate W andanode 14 are immersed in theplating solution 12 to confront each other; aplating power source 18 for applying plating voltage between theanode 14 and a feeding layer (seed layer) formed on the surface to be plated of the substrate W to supply plating current. - A plurality of puddles (agitating rods)34 are vertically suspended from a lower surface of a
puddle shaft 32, which is arranged above the platingvessel 16, horizontally located between thesubstrate holder 10 and theanode 14, and parallel to the surface of the substrate W. Thepuddle shaft 32 is provided with adrive assembly 46 comprising arack 40 attached to thepuddle shaft 32, aworm gear 44 attached to a drive shaft of amotor 42 and engaging with therack 40, to thereby traverse thevessel 16 along with normal and reverse rotations of themotor 42. Thus, thepuddles 34 also move parallel to the substrate W along with the movement of thepuddle shaft 32 to agitate theplating solution 12 within the platingvessel 16. Thedrive assembly 46 can be constructed by any component such as combination of a rack and a pinion, a linkage, or a linear slider. -
Plating solution nozzles 48 are provided to each of thepuddles 34 at the edge facing the substrate W held by theholder 10 and at mutual distances along a vertical direction to open toward the substrate W held by theholder 10 for ejecting or spurting the plating solution.12 thereto. Within thepuddle shaft 32 and each of the puddles 36, platingsolution passages 50 are provided to mutually communicate and reach to theplating solution nozzles 48. Theplating solution passages 50 have an open end connected to a platingsolution circulation line 56 having acirculation pump 52 and aflow regulator 54, and the other end of the platingsolution circulation line 56 is opening in theplating vessel 16. Thus, theplating solution 12 within the platingvessel 16 is pumped up by thecirculation pump 52 and the flow rate in thecirculation line 56 is adjusted by theflow regulator 54. Theplating solution 12 is then supplied to eachnozzles 48 through theline 50 to be ejected toward the substrate W held by theholder 10. - Since the
nozzles 48 are provided on thepuddle 34 which reciprocates parallel to the substrate W to agitate theplating solution 12 within the platingvessel 16, different members for carrying and moving theplating solution nozzles 48 are not necessary so as to simplify the structure of the unit. - Although the embodiment uses a
flow regulator 54 as a flow regulating device for platingsolution 12, this can be dispensed with by using a positive displacement pump which may dual-purposely function as a flow regulator. Also, the embodiment employs a straight nozzle system in which theplating solution 12 is linearly ejected from thenozzle 48, different system can be used such as a showering system in which the solution is sprayed in a shower or as an atomized mist. - The plating process by the above described plating unit will be explained below. Initially, a predetermined amount of plating
solution 12 is supplied to theplating vessel 16, and theholder 10 holding a substrate W is lowered to a predetermined position where the substrate W confronts theanode 14 readily immersed in theplating solution 12. Then, a predetermined plating voltage is applied between theanode 14 and the substrate W by theplating power source 18 for forming a plating film on the substrate surface. Thedrive assembly 46 drives thepuddle 34 to reciprocatingly traverse the bath within thevessel 16 parallel to the substrate W to agitate theplating solution 12, and thecirculation pump 52 is simultaneously driven to eject theplating solution 12 from thenozzles 48 toward the substrate W held by theholder 10. - Such processes of agitation of the
plating solution 12 by the reciprocating puddles 34 and ejecting of theplating solution 12 from thenozzles 48 are synchronized with the reciprocating movement of thepuddles 34 and provides adequate amount of ions uniformly to the substrate W while directing the ejecting flow of theplating solution 12 against the substrate W from approximately orthogonal direction, thereby facilitating thickness uniformity of the plating film within the plated area. - After the plating process is finished, the
anode 14 and the substrate W are disconnected from theplating power source 18, and theholder 10 carrying the substrate W is lifted out of the platingvessel 16. After treating necessary processes such as rinsing with deionized water, the plated substrate W is transferred to a next stage. - The
puddles 34 may be attached to thepuddle shaft 32 through a ball joint, e.g., so that the attachment angle of thepuddle 34 is adjustable for enabling adjustment of the angle of theplating solution 12 ejecting from the nozzle relative to the substrate surface. Thus, the angle of theplating solution 12 bumping to the substrate surface can be optionally adjusted in accordance with the dimension of the recesses formed on the substrate surface, e.g., to make theplating solution 12 effectively contact the recess surface. - The apparatus can be provided with an overflow vessel as shown in a conventional apparatus of FIG. 28, and make the
plating solution 12 having flown into the overflow vessel be ejected from the nozzles to thereafter be circulated. - FIG. 4 shows another embodiment of the present invention applied to an electroless plating unit. This embodiment is different from the first embodiment in not having an
anode 14 and apower source 18 since electroless plating does not use electricity and in using an electroless plating solution including reducing agent as theplating solution 12 for deposition of a metal film. Other structure is the same as the previously described embodiment. - FIG. 5 shows another embodiment of the present invention applied to an electroplating unit. In the embodiment, a
regulation plate 60 having acentral aperture 60 a of a size conforming to that of the substrate W is arranged between the substrate W held by theholder 10 and theanode 14. Theregulation plate 60 having thecentral aperture 60 a is widely used in the industry which functions to locally decrease the potential at the periphery of the substrate surface held by theholder 10 to thereby provide more uniform film thickness distribution. In the embodiment, fournozzles 48 are provided on the surface of theregulation plate 60 facing theholder 10 at locations proximate to thecentral aperture 60 a and at catercorner locations, for example, for ejectingplating solution 12 toward the substrate W held by theholder 10. Thenozzles 48 may be provided on the inner surface of thecentral aperture 60 a. Plating solution passages (not shown) are provided within theregulation plate 60 which communicate with thenozzles 48. Thepuddles 34 can be provided between theregulation plate 60 and theholder 10. - In the embodiment, the
regulation plate 60 which is generally used for the electroplating units is also used as a member for supportingnozzles 48 so that thenozzles 48 can be arranged at their positions by a relatively simple structure. - FIG. 6 is a plan view of a plating apparatus comprising the above-described plating unit. The plating apparatus comprises: a loading/
unloading unit 510; a pair of cleaning/drying process units 512; a pair of first substrate stages 514; a pair of bevel-etching/chemical-cleaningunits 516; a pair of second substrate stages 518; a water-cleaning unit 520 capable of reversing the substrate 180 degrees; and four plating process units (electroplating units) 522. The plating apparatus further comprises; afirst transfer unit 524 for transferring the substrate W between the loading/unloading unit 510, the cleaning/drying process units 512, and the first substrate stages 514; asecond transfer unit 526 for transferring the substrate W between the first substrate stages 514, the bevel-etching/chemical-cleaningunits 516, and the second substrate stages 518; and athird transfer unit 528 for transferring the substrate W between the second substrate stages 518, the water-cleaning unit 520, and theplating process units 522. - Interior of the plating apparatus is partitioned by a
partition wall 523 into aplating space 530 and aclean space 540, and thesespaces partition wall 523 is provided with an open/closeable shutter (not shown). The pressure within theclean space 540 is conditioned lower than the atmospheric pressure and higher than theplating space 530 pressure so that the air within theclean space 540 does not flow out of the plating apparatus and air within theplating space 530 does not flow into theclean space 540. - FIG. 7 shows air flows within the substrate plating apparatus. As shown in FIG. 7, fresh air is introduced from the exterior through a
duct 543, forced through high-performance filters 544 by fans into theclean space 540, and supplied from theceiling 545 a as downward clean air flows around the cleaning/dryingunits 512 and the bevel-etching/chemical-cleaningunits 516. Most of the supplied clean air is returned from afloor 545 b through acirculation duct 552 to theceiling 545 a, from which the clean air is forced again through thefilters 544 by the fans into theclean space 540 to be circulated within theclean space 540. A part of the clean air is exhausted from the cleaning/dryingunits 512 and the bevel-etching/chemical-cleaningunits 516 through aduct 546 to the exterior. Thus, theclean space 540 pressure is conditioned lower than the atmospheric pressure. - Even though the
plating space 530 is dirty and not a clean space due to the water-cleaningunits 520 and theplating process units 522, particles are not allowed to adhere to the surfaces of the substrates W. To prevent particles from adhering to the substrates W, clean air is introduced through theduct 547, filtered by high-performance filters 544, forced into theplating space 530 to flow downward by fans. If the entire amount of clean downward flow air should be afforded by the supply from the exterior, a large amount of air is necessarily introduced and exhausted. Thus, only partial air is exhausted to the exterior through theduct 553 for maintaining theplating space 530 pressure lower than theclean space 540, and most of the down flow air is provided by circulation air flowing through thecirculation duct 550 extending from thefloor 549 b. - Thus, air having returned to the
ceiling 549 a throughcirculation duct 550 is forced again through the high-performance filters 544 and supplied to theplating space 530 as a clean air to be circulated. In the process, air including chemical mists or gases generated in the water-cleaningunits 520, platingprocess units 522, transfer units and a platingsolution conditioning tank 551 is exhausted through theduct 553 so that theplating space 530 is maintained in a lower pressure than theclean space 540. - Thus, when the shutter (not shown) is opened, air within these areas flows from the loading/
unloading units 510,clean space 540 and to theplating space 530 in this order. The exhausted air is discharged through theducts - An interconnect formation apparatus comprising the electroplating apparatus described above and an additional electrolytic etching apparatus is shown in FIG. 8. The interconnect formation apparatus comprises the followings in pairs: loading/
unloading units 210; cleaning/drying process units 212;temporary storage units 214; platingunits 216; water-cleaningunits 218; andetching process units 220. The interconnect formation apparatus further comprises: afirst transfer assembly 222 for transferring the substrate W between the loading/unloading units 210, the cleaning/drying process units 212, and thetemporary storage units 214; and asecond transfer assembly 224 for transferring the substrate W between thetemporary storage units 214, theplating process units 222, the water-cleaningunits 218, and theetching process units 220. - Formation process of an interconnect will be described by further referring to FIGS. 9 and 10. To start with, a substrate W formed with a seed layer on the surface is picked up from the loading/
unloading unit 210 by thefirst transfer assembly 222 to import to theplating process unit 216 one by one via the temporary storage unit 214 (step 1). - Then, the
plating process unit 216 provides plating to the substrate W to form acopper layer 7 on the surface of the substrate W as shown in FIG. 10 (step 2). Plating solutions having a superior leveling ability is selected, in consideration of moderating awide recess 7 a on thecopper layer 7, as a primary concern, resulting from a large recess existing on the substrate surface. Such plating solution may have a high concentration of copper sulfate and a low concentration of sulfuric acid, and one exemplified composition comprises 100˜300 g/l of copper sulfate and 10˜100 g/l of sulfuric acid, with an additive agent for promoting leveling ability containing poly-alkylene-imine, 4-grade ammonium salts, or cationic dyes, for example. The word “leveling ability” is used to mean a property enhancing plating growth from the bottom of recesses formed on the substrate surface. - By using the plating solution with superior leveling ability, growth from the bottom of large recesses is enhanced, as shown in FIG. 10, to obtain a copper layer of a film thickness t2 which is larger than the thickness t1 of a film formed on a flat surface. Thus, the large recess can be filled with a film having a smaller thickness t1.
- The substrate W finished with plating is transferred to the water-
cleaning unit 218 when it is necessary to be water-cleaned, and is transferred to the etching process unit 220 (step 3). - Then, the substrate W is subjected to an electrolytic etching process in the
etching process unit 220 to etch the copper layer formed on the substrate surface (step 4). Etching solution used here may include additive agents for promoting etching such as pyrophoric acid, ethylene diamine, amino-carboxylic acid, EDTA, DTPA, imino-diacetic-acid, TETA, and NTA, or additive agents for suppressing etching such as 4-grade ammonium salts, a copper complex compound such as polymers, organic complexes or their derivatives, or additive agents for rendering corrosion potential of copper ignoble such as thiocarbamide or its derivatives. The base bath used here may comprise acids such as sulfuric acid, hydrochloric acid, sulfuric acid hydrogen peroxide, or hydrofluoric acid hydrogen peroxide, or alkalis such as ammonia hydrogen peroxide, but not be limited thereto. - This etching process selectively etches the build-up portions of the copper layer to enhance flatness of the copper layer. Thus, the following CMP (Chemical Mechanical Planarization) process requires less process rate so that CMP can be completed in a shorter period while preventing generation of so called “dishing”.
- Subsequently, the substrate W finished with etching is transferred to the water-cleaning unit218 (step 5) when it is necessary so as to be water-cleaned, transferred to the cleaning/drying unit to be cleaned and dried (step 6), and returned to the cassette in the loading/
unloading unit 210 by the first transfer assembly 222 (step 7). - The plating process and etching process may be repeated to selectively etch the build-up portion of the copper film for every plating process, to thereby further enhance the flatness of the copper film. While this embodiment employs a continuous process of plating and etching performed within a same interconnect formation apparatus, these processes can be performed individually in each independent apparatuses.
- Further, in the above embodiment, the electroplating unit and electrolytic etching unit are individually provided to have the same structure and are operated using different electrolytes by applying different polarity potentials between the substrate W and the electrode (anode or cathode). However, a single apparatus can be used for both processes by exchanging the polarity so that the electroplating unit can be dual-purposely used as an electrolytic etching unit.
- Next, semiconductor device manufacturing apparatus using the electroplating unit described above will be explained by referring to FIG. 11. This apparatus is assembled on a generally rectangular space on a floor and comprises a
first polishing unit 324 a and asecond polishing unit 324 b confronting each other at one end of the space, and a pair of loading/unloading units at the other end for placing thereonsubstrate cassettes units transfer robots thickness inspection unit 332, and apre-plating process unit 334 having a reversing machine are provided. On the other side of the transfer line, a rinsing/drying unit 336, a second (electroless)plating unit 338 for forming a protection film and acleaning unit 339 having a sponge roller are provided. A vertically movable pusher for delivering substrate W to and from the polishingunits units - An example of an interconnect forming process using the above-described semiconductor device manufacturing apparatus will be described by further referring to FIG. 12. In the first place, a semiconductor substrate W is prepared by: forming semiconductor devices on a
semiconductor substrate 1; depositing a SiO2 insulating film 2 on aconductive layer 1 a; forming acontact hole 3 and atrench 4 for interconnects on the insulatingfilm 2 by using a lithography/etching technique; forming abarrier layer 5 comprising Ta or TaN on the inner surface of thetrench 4; and forming aseed layer 6 as a feeder layer for electroplating on thebarrier layer 5 by sputtering or the like. - The substrates W formed with the
seed layer 6 are delivered fromsubstrate cassettes transfer robot 328 a one by one and are transferred to thefirst plating unit 330. Here, acopper layer 7 is deposited on the surface of the substrate W to fill thetrench 4. The substrate W is subjected to a hydrophilic treatment of the surface prior to plating. This process may be performed by using theplating unit 330 as an electrolytic etching unit by changing the polarity of the power supplied to etch thecopper layer 7 surface as described above. After forming thecopper layer 7, the substrate W is rinsed or washed by thecopper plating unit 330, and may be dried if time allows. - Then, the substrate W is transferred to the film
thickness inspection unit 332 to measure the thickness of the platedcopper film 7, reversed if necessary, and transferred to a pusher 324 adjacent to thepolishing unit - At the
polishing unit cleaning unit 339 by thetransfer robot 328 b for cleaning using a sponge roller, for example. This process provides an interconnect comprisingseed layer 6 and acopper layer 7 in the insulatinglayer 2, as shown in FIG. 12(C). - Subsequently, the substrate W is transferred to the
pretreatment unit 334 in which the substrate W is subjected to application of Pd catalyst or removal of oxides from exposed surfaces, and is transferred to thesecond plating unit 338 to provide electroless plating. By this process, a protection film 9 comprising a Co—W—P alloy film is selectively formed by the electroless plating process on an outer surface of the interconnect which has been exposed through the polishing process to thereby protect the interconnect. The thickness of the interconnect protection film is 0.1˜500 nm, preferably 1˜200 nm, and more preferably 10˜100 nm. - After finishing the electroless plating, the substrate W is spin-dried through high speed rotation, and is extracted from the
second plating unit 338. Then, the substrate W is transferred to thecleaning unit 339 by thetransfer robot 328 b to be cleaned with the sponge roller, and is transferred to the rinsing/drying unit 336 by thetransfer robot 328 a. Then, after rinsing and drying the substrate W by the rinsing/drying unit 336, the substrate W is returned to the same position of thesubstrate cassette - Another plating apparatus according to an embodiment of the present invention is shown in FIG. 13, in which the
plating vessel 16 shown in FIGS. 1 and 2 is used to form bumps on the substrates W. The plating apparatus comprises: two cassette tables 112 for loading acassette 110 containing substrates W such as semiconductor wafers; analigner 114 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a spin-dryer 116 for drying the substrate W after plating through high speed rotation, which are arranged on a same circle. Further, a substrate mounting/demounting unit 120 is provided along one tangential line of the circle for mounting or demounting the substrate W from theholder 118 placed on the unit At a central portion of these units, atransfer unit 122 comprising a transfer robot is provided to transfer the substrate W between these units. - Starting from the substrate mounting/
demounting unit 120, the following units are provided in an linear alignment in the order: astocker 124 for preserving or temporarily storing asubstrate holder 118; apre-wetting vessel 126 for wetting the substrate W by immersing the substrate W within a deionized water to enhance hydrophilicity of the surface of the substrate W; apre-soaking vessel 128 for removing an oxide film of a high electrical resistance formed on a seed layer on the substrate surface by etching with a chemical agent such as sulfuric acid or hydrochloric acid; a first water-cleaningvessel 130 a for cleaning the substrate surface with deionized water; a blowingvessel 132 for dewatering the substrate W after cleaning; a second water-cleaningvessel 130 b; and aplating unit 134. Theplating unit 134 comprises a plurality of platingvessels 16 shown in FIGS. 1 and 2 within anoverflow vessel 136, and each platingvessel 16 can contain a single substrate W for plating. In the following, a process of plating copper is described, while other metals or alloys such as nickel, solder, or gold can be plated in the same manner. - A substrate
holder transfer unit 140 is provided on one side of those units for transferringsubstrate holders 118 together with the substrate W held thereon. The substrateholder transfer unit 140 comprises; afirst transporter 142 for transferring substrates W between the substrate mounting/demounting unit 120 and thestocker 124; and asecond transporter 144 for transferring substrates W between thestocker 124,pre-wetting vessel 126,pre-soaking vessel 128, water-cleaningvessels vessel 132, and theplating unit 134. In the embodiment, thefirst transporter 142 is movable as far as the water-cleaningvessel 130 a, and the movable range of thesecond transporter 144 is adjustable, Thesecond transporter 144 is optional and can be dispensed with. - On the opposite side of the substrate
holder transfer unit 140 relative to theoverflow vessel 136, apuddle drive unit 146 is provided for driving puddles 34 (shown in FIGS. 1 and 2) arranged within each platingvessel 16 for agitating theplating solution 12. - The substrate mounting/
demounting unit 120 comprises aflat mounting plate 152 laterally slidable alongrails 150, which can mount thereon twosubstrate holders 118 horizontally juxtaposed so that, after one of thesubstrate holder 118 has transferred substrate W to or from thesubstrate transfer unit 122, the mountingplate 152 is laterally slid to allow theother substrate holder 118 to transfer a substrate W to or from thesubstrate transfer unit 122. - Next, sequential processes of bump plating using the above plating apparatus are described. Substrates W are prepared, as shown in FIG. 14(a), by depositing a
seed layer 500 as a feeder on the surface of the substrate W, and, after coating a resistfilm 502 having a thickness H of 20˜120 μm on the whole surface, formingapertures 502 a having a diameter D of 20˜200 μm. Substrates W are stored in thecassette 110 so as to face the surface to be plated upward, and thecassette 110 is then mounted on the cassette table 112. - Subsequently, the
substrate transfer unit 122 takes one substrate W out of thecassette 110 mounted on the table 112 and load it on thealigner 114 to align the orientation flat or notch to a predetermined direction. The substrate W is then transferred to the substrate mounting/demounting unit 120 by thesubstrate transfer unit 122. - At the substrate mounting/
demounting unit 120, thetransporter 142 grasps twosubstrate holders 118 at a time with a grasp assembly (not shown) and elevates them, transfers them to the substrate mounting/demounting unit 120, and rotate thesubstrate holder 118, 90 degrees to a horizontal state. Then, the twosubstrate holders 118 are lowered and are placed concurrently on the mountingplate 152 of the substrate mounting/demounting unit 120. At this time, a cylinder (not shown) is actuated to keep thesubstrate holder 118 open. - At this state, a substrate W carried by the
substrate transfer unit 122 is inserted and thesubstrate holder 118 is closed so that the substrate W is loaded. Then, the mountingplate 152 is slid laterally and theother substrate holder 118 is loaded with the substrate W and the mountingplate 152 is returned to the previous position. - Then, the substrate
holder transfer unit 140 grasps twosubstrate holders 118 at a time with the grasp assembly of thetransporter 142, and after elevating theholders 118, transfers them to the substrate mounting/demounting unit 120 and rotate them 90 degrees to a vertical state, to thereby support them with thestocker 124 in a suspended manner for temporary storage. In thesubstrate transfer unit 122, substrate mounting/demounting unit 120, and thetransporter 142 of the substrateholder transfer unit 140, the above operations are sequentially repeated to mount the substrates W on thesubstrate holder 116 stored in thestocker 124 and suspend them in a certain position in thestocker 124 to temporarily store the substrate W. - Meanwhile, the
other transporter 144 of the substrateholder transfer unit 140 grasps a pair ofsubstrate holders 118 loaded with a substrate W and temporarily stored in thestocker 124 concurrently with a grasping assembly (not-shown), and after elevating them, transfers them to thepre-wetting vessel 126, lowers them to dip into a wetting liquid such as deionized water contained in thepre-wetting vessel 126 for wetting the surface to enhance hydrophilicity. The wetting liquid is not limited to deionized water as long as it can improve hydrophilicity so as to wet the substrate surface and replace the air within fine recesses or holes. - Then, a
substrate holder 118 loaded with a substrate W is transferred to thepre-soaking vessel 128 in the same manner as above, so that the substrate W is dipped in the chemical agent held in thepre-soaking vessel 128 such as sulfuric acid or hydrochloric acid for etching a high electrical resistance oxide film on theseed layer 500 surface to expose a clean metal surface. Further, theholder 118 holding a substrate W is transferred to the water-cleaningvessel 130 a in the same manner as above, to clean the substrate surface with deionized water held in the water-cleaningvessel 130 a. - After finishing water-cleaning, the
substrate holder 118 is then transferred to theplating unit 134 and is supported in the plating vessel 16 a suspended manner. Thetransporter 144 of the substrateholder transfer unit 140 operates the above steps repeatedly to transfer theholders 118 and sequentially suspend them in a predetermined position within the platingvessel 16. The platingvessel 16 is readily filled with a plating solution, which may be filled after finishing installation of thesubstrate holders 118. - After finishing installation of all the
holders 118, voltage is applied between theanode 14 and the substrate W as shown in FIGS. 1 and 2, and thepuddles 34 are reciprocated parallel to the substrate surface bypuddle drive unit 146, and concurrently ejecting plating solution from thenozzles 48 provided on thepuddles 34 to plate the surface of the substrate W. Thesubstrate holder 118 is suspended from and secured to the upper portion of the platingvessel 16 and electricity is fed from theplating power source 18 to the seed layer 500 (see FIG. 14). - After finishing plating, supply of plating current and plating solution, as well as
puddle 34 reciprocation is ceased and thesubstrate holders 118 loaded with a substrate W are held by the grasp assembly of thetransporter 144 two at a time and are lifted from the platingvessel 16 and halted. - The
substrate holder 118 is then transferred to the water-cleaningvessel 130 b in the same manner as above, and immersed in the deionized water held in the water-cleaningvessel 130 b to clean the surface. Then, thesubstrate holder 118 holding the substrate W is transferred to the blowingvessel 132 and water droplets on thesubstrate holder 118 is removed by air blow. Then, thesubstrate holder 118 is returned to thestocker 124 at a predetermined position to be suspended. - Meanwhile, the
other transporter 142 of the substrateholder transfer unit 140 holds two of thesubstrate holders 118 at a time, which hold respective substrates W and have been returned to thestocker 124 after plating, and places them on the mountingplate 152 of the substrate mounting/demounting unit 120. Then, thesubstrate holder 118 on a central side is opened, and the substrate W finished with plating is demounted bysubstrate transfer unit 122 and is transferred to the spin-dryer 116 to be dewatered with a high speed rotation of the spin-dryer 116 after rinsing, and is returned to thecassette 110 by thesubstrate transfer unit 122. After returning substrate W held by one of thesubstrate holder 118 or simultaneously with the returning process, the mountingplate 152 is slid laterally for returning the substrate W held by theother substrate holder 118 to thecassette 110 after rinsing and spin-drying. - The mounting
plate 152 is returned to an initial state, and thesubstrate holders 118 removed of the substrate W is returned to thestocker 124, and another pair ofsubstrate holders 118 holding the substrate W finished with plating are held by thetransporter 142 and with a grasp assembly and are placed on the mountingplate 152 of the substrate mounting/demounting unit 120 to repeat the same operation. When all of the substrates W finished with plating are demounted from thesubstrate holder 118, spin-dried and returned to thecassette 110, the operation is finished. Thus, the substrate W is provided with a plated film within theopenings 502 a formed on the resistfilm 502, as shown in FIG. 14(b). - The spin-dried substrates W are immersed into a solvent such as acetone held at a temperature of 50˜60° C. to remove the resist
films 502 formed on the substrate W as shown in FIG. 14(c). The substrate W is further subjected to a process for removing the exposedseed layer 500 as shown in FIG. 14(d). Then, the plated film is reflowed to form a bump which has been rounded by surface tension. The substrate W is annealed at a temperature higher than 100° C. to remove residual stress within the bump. - FIG. 15 is a plan view of another embodiment of the plating apparatus according to the present invention for forming bumps or the like. As shown in FIG. 15, the plating apparatus comprises: two cassette tables410 for loading a cassette containing substrates W such as semiconductor wafers; an
aligner 412 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a rinser-dryer 414 for rinsing and drying the substrate W after plating through high speed rotation. Further, afirst transfer robot 416 is provided capable of traveling between the two cassette tables 410,aligner 412, and rinser-dryer 414 to transfer substrates W between them. Thefirst transfer robot 416 comprises a vacuum suction type hand or a drop-in type hand to deliver substrate W in a horizontal state. - Further, this embodiment comprises four plating
units 420 serially arranged. Each of these platingunits 420 comprises a plating vessel 422 and water-cleaning vessel 424 contiguously arranged to each other, and asubstrate holder 426 arranged above these plating vessel 422 and water-cleaning vessel 424 for detachably holding substrates W in a vertical state. Thesubstrate holder 426 is vertically movable by avertical drive section 428 and laterally movable by alateral drive section 430. In front of the platingunits 420, analigner 412, a rinser-dryer 414, and asecond transfer robot 432 for delivering substrates W between thesubstrate holder 426 of eachplating unit 134 are provided. Thesecond transfer robot 432 comprises a hand for holding a substrate W with a mechanical chuck and having a reversingassembly 434 for tilting a substrate W between a horizontal state and a vertical state, so that it holds substrates W in a horizontal state when delivering between thealigner 412 and rinser-dryer 414, and in a vertical state between thesubstrate holder 426. - Within each plating vessel422, an anode 436 is provided at a predetermined position to confront the substrate W held by the
substrate holder 426. Each plating vessel 422 further comprises puddles 440 arranged between the substrate W and anode 436 to reciprocatingly move parallel to the substrate W to equalize the plating solution flow, and aregulation plate 442 having a central aperture of a size corresponding to the substrate W for lowering potentials about the periphery of the substrate W to equalize thickness of the plated film on the substrate W. On either one of the puddle 440 orregulation plate 442, a nozzle as shown in FIGS. 1, 2 and 5 is provided to eject plating solution toward the substrate W held by thesubstrate holder 426. - Here, sequential processes for plating the substrate W to form bumps by using the plating apparatus constructed as above will be described. Substrates W are prepared, as shown in FIG. 14(a), by depositing a
seed layer 500 as a feeder on the surface of the substrate W, and, after coating a resistfilm 502 having a thickness H of 20˜120 μm on the whole surface, forming apertures having a diameter D of 20˜200 μm. Substrates W are stored in the cassette so as to face the surface to be plated upward, and the cassette is then mounted on the cassette table 410. - Subsequently, the
first transfer robot 416 takes one substrate W out of the cassette mounted on the table 410 and put it on thealigner 412 to align the orientation flat or notch to a predetermined direction. The aligned substrate W is then tilted in the reversingassembly 434 from a horizontal state to a vertical state, and is delivered to thesubstrate holder 426 of one of theplating units 420. - In this embodiment, transfer of the substrate W is performed at a region above the water-cleaning vessel424.
Substrate holder 426 is elevated by thevertical drive section 428, and positioned beside the water-cleaning vessel 424 bylateral drive section 430 to receive the substrate W from thesecond transfer robot 432 in a vertical state. - Then, the
substrate holder 426 is moved to the plating vessel 422 by thelateral drive section 430. The plating vessel 422 is readily filled with a plating solution. Thesubstrate holder 426 is lowered by thevertical drive section 428 and the substrate W held by thesubstrate holder 426 is immersed into the plating solution within the plating vessel 422. By applying plating voltage between the anode 436 and the substrate W, moving the puddles 440 reciprocatingly parallel to the substrate surface, and concurrently ejecting the plating solution from thenozzles 48 provided on at least one of the puddles 440 orregulation plate 442, the surface of the substrate W is plated. - When plating is finished, application of voltage, supply of plating solution and reciprocation of the puddle440 are ceased, and the
substrate holder 426 holding the substrate W is elevated and withdrawn from the plating vessel 422. - The
substrate holder 426 is transferred to the water-cleaning vessel 424 by thelateral drive assembly 430, and lowered into the water-cleaning vessel 424 to be washed by deionized water. The washing process is performed by ejecting deionized water toward the substrate W from nozzle (not shown) arranged within the water-cleaning vessel 424 while lifting the substrate W upward within the vessel 424. Another possible washing process is to rapidly pull up thesubstrate holder 426 through a deionized water which is readily supplied to the water-cleaning vessel 424 in advance. It is naturally possible to combine both processes. - The
second transfer robot 432 receives the washed substrate W from thesubstrate holder 426 in a vertical state at a region above the water-cleaning vessel 424, rotates it 90 degrees to a horizontal position, and transfers it to the rinser-dryer 414 for loading there. After rinsing and dewatering by high speed rotation of the rinser-dryer 414, the substrate W is returned to the cassette loaded on the cassette table 410 to finish operation. Thus, the substrate W is provided with a platedfilm 504 within theopenings 502 a formed on resistfilms 502, as shown in FIG. 14(b). - Now, another embodiment of the present invention will be described by referring to the attached drawings.
- As shown in FIG. 16, the plating apparatus comprises: one or plural cassette tables610 for loading a cassette containing substrates W such as semiconductor wafers; an
aligner 612 for aligning the substrate W by directing an orientation flat or notch formed on the substrate W to a certain direction; and a rinser-dryer 614 for rinsing and drying the substrate W through high speed rotation after plating. Further, afirst transfer robot 616 is provided between the one or plural cassette tables 610,aligner 612, and rinser-dryer 614 which is capable of traveling and transferring substrates W between these units. Thefirst transfer robot 616 comprises a vacuum suction type hand or a drop-in type hand to deliver substrate W in a horizontal state. - Further, the plating apparatus comprises four plating
units 620 serially arranged. The number or arrangement of these platingunits 620 can be optionally selected. In front of these platingunits 620, analigner 612, a rinser-dryer 614, and asecond transfer robot 632 for delivering substrates W between thesubstrate holder 634 of eachplating unit 620 are provided. Thesecond transfer robot 632 comprises ahand 626 for holding a substrate W by a mechanical chuck and having a reversingassembly 624 for tilting a substrate W between a horizontal state and a vertical state, so that it holds substrates W in a horizontal state when delivering to thealigner 612 and rinser-dryer 614, and in a vertical state to thesubstrate holder 634. - As shown in FIGS.17 to 23, each
plating unit 620 comprises aplating vessel 632 mounted on apedestal 630 and asubstrate holder 634 arranged in a confronting position to theplating vessel 632. Thesubstrate holder 634 is fixed on an upper surface of aslide plate 638 laterally slidable alongrails 636 via abracket 640. - The
plating vessel 632 comprises: avessel body 642 shaped as a box opening upward and having a platingsolution inlet port 642 a, a plating solution inlet/drain port 642 b, and afront aperture 642 c formed on a front surface facing thesubstrate holder 634; and anoverflow vessel 643 as shown in FIG. 21 provided on the upper portion of thevessel body 642. Thevessel body 642 is partitioned by apartition plate 644 having a plating solution flow-inport 644 a and a plating solution flow-throughport 644 b. Within thevessel body 642 and above the plating solution flow-inport 644 a, ananode 636 is vertically arranged by being held by ananode support 648. Aweir member 652 having a rectangular box shape and opening in both upward and downward directions is provided vertically movable and to surround theanode 636 when it is lowered. Aseal member 650 is attached to the lower edge of theweir member 652. - The
seal member 650 pressingly contacts the upper surface of thepartition plate 644 when theweir member 652 is lowered to define anenclosed reservoir chamber 654 within thevessel body 642. Thisreservoir chamber 654 is used to reserve plating solution even when the apparatus is not plating, and theanode 636 is immersed in the reserved plating solution within thereservoir chamber 654 to prevent it from drying. This prevents a black film deposited on the surface of theanode 636 from drying, being oxidized, peeling off and sticking to the plating surface of the substrate W. Theweir member 652 is lifted up when the apparatus is in operation to open the front face of theanode 636. - A
regulation plate 656 having acentral aperture 656 a of a size conforming to the size of the substrate W is arranged between theweir member 652 and thefront aperture 642 c of thevessel body 642 for lowering the potentials at the periphery of the substrate surface held by theholder 634 to provide more uniform film thickness distribution.Nozzles 662 are provided on the surface of theregulation plate 656 at locations proximate to the central aperture and along a circumferential direction, for example, for ejecting plating solution toward the center of the substrate W held by theholder 634. -
Puddles 640 are arranged between theweir member 652 andaperture 642 c of thevessel body 642 to reciprocatingly move parallel to the substrate W held by thesubstrate holder 634 by being driven by the puddle drive motor to thereby control (or disturb) the plating solution flow between theregulation plate 656 and the substrate W held by thesubstrate holder 634. - Further, a
nozzle head 664 is provided within thevessel body 642 and in front of theaperture 642 c, which extends vertically and comprisesnozzles 662 at a predetermined pitch along the longitudinal direction. Thenozzle head 664 is reciprocatingly movable parallel to theaperture 642 c by a nozzle head drive motor. Thenozzle head 664 is retracted at a standby position beside thesubstrate holder 634 while plating is operated to avoid interference with the fore and aft movement of thesubstrate holder 634, and when the plating is finished, moves forward ahead of thesubstrate holder 634 to move reciprocatingly and parallel to the plating surface of the substrate W while ejecting cleaning liquid such as deionized water, for example, and inert gas such as N2. Thus, the substrate W is showered by the ejected deionized water and inert gas and is washed away of plating solution remaining on the surfaces of the substrate W andsubstrate holder 634, and finally, the remaining deionized water is removed from the surface by being blown away by the inert gas. - As shown in FIG. 22 in detail, an
intermediate plate 666 and asurface plate 669 are laminated or built-up at the periphery of theaperture 642 c of thevessel body 642. Theintermediate plate 666 comprises anannular communication groove 666 a, which communicates with a vacuum source (not shown), and thesurface plate 669 comprises asuction port 668 a communicating with thecommunication groove 666 a and attached with anannular seal plate 668. - The
plating vessel 632 is provided with a plating solution regulation and supply system as shown in FIG. 21. The plating solution regulation and supply system comprises: a platingsolution supply tank 670; a platingsolution supply system 672 and an auxiliary plating solution supply system 674 for supplying and circulating the plating solution within the platingsolution supply tank 670 to theplating vessel 632; a platingsolution regulation system 676 for circulating the plating solution within the platingsolution supply tank 670 for regulation of a plating bath by controlling the temperature or removing impurities. - The plating
solution supply system 672 comprises: amain supply line 678 extending from the platingsolution supply tank 670 and connected to the platingsolution inlet port 642 a of thevessel body 642; and areturn line 680 communicating theoverflow vessel 643 and platingsolution supply tank 670. Themain supply line 678 comprises afeeder pump 682, afilter 684, a first flow controller 688 a, ashutter valve 686 a, and a second flow controller 686 b. Abranch line 690 is provided to bifurcate from themain supply line 678 at an upstream of theshutter valve 686 a and communicates to platingsolution nozzles 659 arranged on the inside of theregulation plate 656 through a shutter valve 686 b and a flow controller 668 c. The platingsolution supply system 672 further comprises: arapid supply line 692 connected to themain supply line 678, comprising ashutter valve 686 c, and connected to the plating solution inlet/drain port 642 b of thevessel body 642; and arapid drain line 694 directly connecting the plating solution inlet/drain port 642 b of thevessel body 642 and the platingsolution supply tank 670 and comprising ashutter valve 686 d. - The auxiliary plating solution supply system674 comprises an
auxiliary supply line 696 bifurcating from themain supply line 678 at an upstream of theshutter valve 686 a and communicates to the plating solution flow-inport 644 a of thepartition plate 644 through ashutter valve 686 e, so that therapid drain line 694 works dual-purposely as areturn line 696. - The plating
solution regulation system 676 comprises a circulation line having acirculation pump 700, a heat-exchanger 702, and afilter 704. Thus, the plating solution within the platingsolution supply tank 670 is filtered by passing through thefilter 704 as thecirculation pump 700 is operated. - The
substrate holder 634 is constructed to move back and forth along arail 712 in accordance with the activation of a pushingcylinder 710 arranged between theslide plate 638 and thebracket 640. Thesubstrate holder 634 comprises: a disc-shaped supportinghead 714 of approximately the same size with the substrate W to be plated; and aseal unit 716 arranged in front of the supportinghead 714 on a side facing theplating vessel 632, and detachably attached to the opening end of acasing 718 which surrounds the supportinghead 714. - The supporting
head 714 is connected to apiston rod 721 of a horizontally arrangedcross drive cylinder 720 which is fixed to thecasing 718, and comprises one ormore guiding rods 722 connected thereto at positions along a circumferential line. These guidingrods 722 are supported by aslide bearing 724 provided on thecasing 718 so as to be movable in a cross direction to the supportinghead 714. Thus, the supportinghead 714 is moved back and forth while being guided by the guidingrods 722. - One side of the supporting
head 714 facing theplating vessel 632 comprises aflat surface 714 a which is formed with arecess 714 b for receiving ahand 626 of thetransfer robot 622, which extends horizontally and employs vacuum chucking for holding a substrate W for example. A plurality of holder pins 728 are arranged at locations to surround the periphery of the supportinghead 714, whose tip ends protrude from theflat surface 714 a toward theplating vessel 632 and horizontally extend rearward. The inner surface of theholder pin 728 protruding from theflat surface 714 a is provided with arecess 714 b for receiving the outer peripheral edge of the substrate W so as to temporarily position the substrate W while preventing displacement. The proximal end of theholder pin 728 is connected to atemporary positioning cylinder 730 provided on the rear surface of the supportinghead 714, so that thetemporary positioning cylinder 730 drives theholder pin 728 to move along a radial direction of the supportinghead 714. - Thus, the
transfer robot 622 holds the substrate W with the vacuum chuckingtype hand 626 and transfers it to the front surface of the supportinghead 714. Then, the robot moves thehand 626 toward the supportinghead 714 and locates it within therecess 714 b close to theflat surface 714. The holder pins 728 are moved radially inside the supportinghead 714 so that the peripheral edge of the substrate W is received in therecess 714 b. Thehand 626 is extracted so that the substrate W is held in front of the supportinghead 714 by the holder pins 728. - The
seal unit 716 comprises a generallycylindrical support member 732, which can be attached or detached to the opening of thecasing 718 by using, for example, a cramp type fastener 734 (shown in FIG. 19) with a single manipulative action. As is described below, by using theseal unit 716, in which aseal ring 740, a cathode 762, and, additionally, aseal member 736 are integrally incorporated, expendable items such asseal ring 740 orseal member 736 can be easily and rapidly exchanged together with the cathode 762. Instead of using thecramp type fastener 734, theseal unit 716 can be attached/detached by using a plunger for example, to exchange theseal ring 740 orseal member 736 more easily. - The
annular seal member 736 is provided on the front surface of thesupport member 732 facing theplating vessel 632, and at a position opposite to theseal plate 668 provided on thesurface plate 669. Theseal member 736 is formed with a pair ofprojections head 714 moves toward theplating vessel 632, theseprojections seal plate 668 so that the space defined by theprojections suction port 668 a. Thus, by vacuuming the space through thesuction port 668 a, theaperture 642 c of thevessel body 642 is water-tightly sealed so as to block theaperture 642 c with thesubstrate holder 634. - The
support member 732 of theseal unit 716 comprises a cylindrical portion of a size through which the supportinghead 714 holding the substrate W can pass, and on which theannular seal ring 740 andcathode electrodes 742 are integrally attached. That is, theseal ring 740 is pressed against the periphery of the substrate W, which is temporarily held by the supportinghead 714, so as to seal the region. Theseal ring 740 is fixed by being supported from both sides of the outer periphery with the front surface of thesupport member 732 facing theplating vessel 632 and a stopper ring so as to project inside the cylindrical portion. The inner edge of theseal ring 740 is formed to cuspidally project toward the supportinghead 714. On the other hand, thecathode electrodes 742 are elastically pressed against the periphery of the substrate W which is temporarily held by the supportinghead 714, thereby allowing to feed electricity to theseed layer 500 formed on the surface of the substrate W. Thecathode electrodes 742 are located at circumferentially spaced positions at a predetermined pitch, and the edge facing theplating vessel 632 is circularly curved toward the inside of thesupport member 732, and the curved portions are covered by theseal ring 740. - With such arrangement, when the supporting
head 714 temporarily holding the substrate W moves toward theplating vessel 632, theseed layer 800 formed on the surface of the substrate W contacts with thecathode electrodes 742 at the periphery of the substrate W, and further progress of the supportinghead 714 makes thecathode electrodes 742 bend to secure the contact as well as the periphery of the substrate W be pressed toward theseal ring 740 to provide a water-tight seal. At this time, the substrate W is in close contact with theflat surface 714 a of the supportinghead 714 to be fixed thereto. Thecathode electrodes 742 are located outside the seal formed by theseal ring 740 so as to prevent thecathode electrodes 742 from contacting the plating solution. - Next, a series of operations are explained in which the
substrate holder 634 holds the substrate W and thesubstrate holder 634 then water-tightly seals theaperture 642 c of thevessel body 642 of theplating vessel 632 for plating the substrate W by referring to FIGS. 24 to 26. - As shown in FIG. 24(a), the supporting
head 714 of thesubstrate holder 634 is retracted away from theplating vessel 632, and the substrate W is transferred between thesubstrate holder 634 and theseal unit 716, which is held by thehand 626 of the transfer robot 622 (shown in FIG. 16) through suction force or by mechanical chucking and vertically arranged after reversing. Subsequently, thehand 626 holding the substrate W with a vacuum suction force, for example, is transferred to the supportinghead 714 and brought into therecess 714 b of the supportinghead 714 to make the substrate W approach to theflat surface 714 a of the supportinghead 714, as shown in FIG. 24(b). Then, the holder pins 728 are radially moved toward inside the supportinghead 714, and the peripheral edge of the substrate W is located within therecess 714 b to temporarily hold the substrate W. FIG. 17 shows this state. Then, thehand 626 releases the substrate W and is retracted from thesubstrate holder 634. After that, thecross drive cylinder 720 is actuated to move the supportinghead 714 toward theplating vessel 632. - As the supporting
head 714 moves forward, as shown in FIG. 24(d), theseed layer 800, as shown in FIG. 27, formed on the substrate W is contacted by thecathode electrode 742 at the periphery of the substrate W. As the supportinghead 714 further moves forward, the periphery of the substrate W is pressed against theseal ring 740 to provide a water-tight seal and, concurrently, is secured through a close contact with theflat surface 714 a of the supportinghead 714. - In the
plating vessel 632, as shown in FIG. 25(a), theweir member 652 is lowered so as to press theseal member 650 at the lower edge against the upper surface of thepartition plate 644, to thereby define areservoir chamber 654 with theweir member 652. Plating solution is introduced through the plating solution auxiliary supply system 674 to thereservoir chamber 654 and immerses theanode 636 in the plating solution within thereservoir chamber 654 before starting plating. This process prevents theanode 636 and the a black film deposited on the surface of theanode 636 from drying, being oxidized, peeling off and sticking to the plating surface of the substrate W. - At the same time, the plating solution introduced to the
reservoir chamber 654 and having overflowed theweir member 652 is returned to the platingsolution supply tank 670 through thereturn line 698 so as to circulate the plating solution within thereservoir chamber 654 even when the apparatus is not in operation. By doing so, the plating solution within thereservoir chamber 654 does not suffer from variation of composition or deterioration. - To start plating, the pushing
cylinder 710 is actuated to move thesubstrate holder 634 toward theplating vessel 632 as shown in FIG. 24(e), and when theprojections surface plate 669, the space defined by theprojections aperture 642 c of thevessel body 642 to block there. At this state, thesubstrate holder 634 is continuously pressed at a constant pressure against thevessel body 642 with the pushingcylinder 710. The state of theplating vessel 632 is shown in FIG. 25(b). - Then, the plating solution is rapidly supplied into the
vessel body 642 through therapid supply line 692 of the platingsolution supply system 672 as shown in FIG. 25(c). When a certain amount of the plating solution is introduced to thevessel body 642, theweir member 652 is lifted as shown in FIG. 25(d), and theanode 636 is confronted by the surface of the substrate W held in thesubstrate holder 634. Here, the plating power source applies plating voltage between theanode 636 and the cathode 762 which conducts to the seed layer 800 (see FIG. 27), and the predetermined amount of plating solution is supplied to the interior of thevessel body 642, through the platingsolution supply system 672. Meanwhile, as shown in FIG. 26(a), plating solution is supplied to thenozzles 662 provided on theregulation plate 656 through thebranch line 690 so as to eject the plating solution toward the substrate W held by thesubstrate holder 634, and the puddles 660 (see FIG. 21) are reciprocatingly moved parallel to the substrate surface. The plating solution having overflowed to theoverflow vessel 643 is returned to the platingsolution supply tank 670 through thereturn line 680 for circulation to thereby plate the substrate surface. The state here is shown in FIG. 18. - When the plating is finished, the application of the plating voltage is stopped, and the supply of the plating solution is ceased and the
weir member 652 is lowered as shown in FIG. 26(b), and the plating solution is introduced into thereservoir chamber 654 confined by theweir member 652 through the auxiliary supply system. - Then, the plating solution within the
vessel body 642 except within thereservoir chamber 654 is rapidly drained through therapid drain line 694 by opening theshutter valve 686 d, as shown in FIG. 26(c). This rapid drainage decreases waiting time necessary for transition to a following plating process. - Then, the pushing
cylinder 710 is reversely actuated to move thesubstrate holder 634 away from theplating vessel 632, and thenozzle head 664 is moved from the retracted position and parallel to the surface of the substrate W held by thesubstrate holder 634, and cleaning liquid such as deionized water is ejected from thenozzles 662 toward the substrate surface to rinse off the plating solution remaining on the substrate W. The deionized water is removed by blowing inert gas such as N2 gas. Then, the plated substrate W is delivered to thehand 626 of thetransfer robot 622 by reversely performing the processes described above. - FIGS. 19 and 20 show a state where the
substrate holder 634 is subjected to maintenance. During maintenance, thesubstrate holder 634 is slid together with theslide plate 638 along therail 712 to a lateral position of theplating vessel 632, so that the space necessary for the maintenance is reserved to facilitate operations such as exchanging theseal unit 716 or maintaining thesubstrate holder 634. - Next, sequential processes of bump plating using the above plating apparatus are described. Substrates W are prepared, as shown in FIG. 27(a), by depositing a
seed layer 800 as a feeder on the surface of the substrate W, and, after coating a resistfilm 802 having a thickness H of 20˜120 μm on the whole surface, forming apertures having a diameter D of 20˜200 μm. Substrates W are stored in the cassette so as to face the surface to be plated upward, and the cassette is then mounted on the cassette table 610. - Subsequently, the
first transfer robot 616 takes one substrate W out of the cassette mounted on the table 610 and put it on thealigner 612 to align the orientation flat or notch to a predetermined direction. Thesecond transfer robot 622 takes the aligned substrate W from thealigner 612 and tilts the substrate W 90 degrees from a horizontal position to a vertical position with the reversingassembly 624 and delivers the substrate W to asubstrate holder 634 of one of theplating units 620. Then, the substrate W held by thesubstrate holder 634 is plated, washed by deionized water, and air-blown, and is delivered to thesecond transfer robot 622. Thesecond transfer robot 622 tilts the substrate W 90 degrees from a vertical position to a horizontal position and transfers the substrate W to the rinser-dryer 614 to place it. - The rinser-
dryer 614 rinses and dewaters the substrate W and returns it to the cassette loaded on the table 610 to finish the operation. Thus, the substrate W is formed with a depositedfilm 804 developed within theaperture 802 a of the resistfilm 802, as shown in FIG. 27(b). - The spin-dried substrates W are immersed into a solvent such as acetone held at a temperature of 50˜60° C. to remove resist
films 802 formed on the substrate W as shown in FIG. 27(c). The substrate W is further subjected to a process for removing the exposed andunnecessary seed layer 800 as shown in FIG. 27(d). Then, the platedfilm 804 is reflowed to form abump 806 which has been rounded by surface tension, as shown in FIG. 27(e). The substrate W is annealed at a temperature higher than 100° C. to remove residual stress within thebump 806.
Claims (26)
1. An apparatus for plating a substrate, said substrate having a plating surface to be plated, said apparatus comprising:
a cassette table for loading a cassette containing therein a substrate;
an aligner for aligning said substrate;
a rinser-dryer for rinsing and drying said substrate; and
a plating unit for plating said substrate, said plating unit comprising a plating vessel containing a plating solution, a holder for holding said substrate while being immersed in said plating solution in said plating vessel so as to expose said plating surface to said plating solution, and a nozzle for ejecting said plating solution toward said plating surface.
2. The apparatus of claim 1 , wherein said nozzle is movable parallel to said plating surface.
3. The apparatus of claim 1 , wherein said nozzle is provided between an anode, which is placed within said plating vessel to confront said plating surface, and said plating surface.
4. The apparatus of claim 1 , wherein said nozzle is provided on a puddle movably arranged within said plating vessel for agitating said plating solution within said plating vessel.
5. The apparatus of claim 1 , wherein said nozzle is provided on a regulation plate arranged between an anode placed in said plating vessel and said plating surface.
6. The apparatus of claim 1 , wherein an ejecting angle of said nozzle relative to said plating surface is adjustable.
7. The apparatus of claim 1 , wherein said nozzle is supplied with a plating solution within said plating vessel circulated by a circulation line.
8. The apparatus of claim 1 , wherein said nozzle is provided with a flow controller for controlling a flow rate of said plating solution ejected by said nozzle.
9. The apparatus of claim 1 , wherein said nozzle comprises a nozzle assembly comprising a plurality of nozzles.
10. A method of plating a substrate having a plating surface to be plated, said method comprising:
holding said substrate with a substrate holder;
immersing said holder in a plating solution contained in a plating vessel so as to expose said plating surface to said plating solution;
placing a nozzle in said plating vessel to confront to said plating surface;
ejecting a plating solution from said nozzle toward said plating surface.
11. The method of claim 10 , wherein aid nozzle is moved while ejecting said plating solution.
12. An apparatus for plating a substrate having a plating surface to be plated, said apparatus comprising:
a plating vessel containing a plating solution;
a holder for holding said substrate while exposing said plating surface to said plating solution within said plating vessel;
a nozzle provided in said plating vessel for ejecting a plating solution toward said plating surface.
13. The apparatus of claim 12 , wherein said nozzle is movable relative to said plating surface.
14. The apparatus of claim 12 , wherein said nozzle is arranged to eject said plating solution at a substantially right angle relative to said plating surface.
15. The apparatus of claim 12 , wherein said nozzle is arranged to eject said plating solution at an oblique angle relative to said plating surface.
16. An apparatus for plating a substrate having a plating surface to be plated, said apparatus comprising:
a plating vessel accommodating a plating solution and an anode therein and having a lateral opening;
a substrate holder for holding said substrate while exposing said plating surface to said plating solution within said plating vessel and sealing said substrate to prevent infiltration of plating solution to a surface of said substrate other than said exposed plating surface; and
holder driving assembly for driving said substrate holder to a position where said plating surface covers said opening of said plating vessel.
17. The apparatus of claim 16 , wherein said substrate holder is laterally slidable.
18. The apparatus of claim 16 , wherein said plating vessel comprises a weir member for confining a reservoir surrounding said anode within said plating vessel, which can contain plating solution therein for immersing said anode.
19. The apparatus of claim 18 , further comprising an auxiliary plating solution supply system for circulating said plating solution within said reservoir chamber.
20. The apparatus of claim 16 , further comprising a rapid drain system for rapidly draining plating solution from said plating vessel.
21. The apparatus of claim 16 , further comprising a nozzle for ejecting plating solution toward said plating surface of said substrate held by said substrate holder.
22. The apparatus of claim 16 , wherein said substrate holder comprises a detachable seal unit comprising a seal ring and a cathode integrated together.
23. The apparatus of claim 22 , wherein said seal unit comprises a seal member for water-tightly sealing said opening of said plating vessel.
24. A method of plating a substrate having a plating surface to be plated, said method comprising:
accommodating a plating solution and an anode in a plating vessel having a lateral opening;
holding said substrate with a substrate holder while exposing said plating surface to said plating solution within said plating vessel and sealing said substrate to prevent infiltration of plating solution to a surface of said substrate other than said exposed plating surface; and
driving said substrate holder to a position where said plating surface covers said opening of said plating vessel.
25. The method of claim 24 , wherein said plating vessel comprises a weir member for confining a reservoir surrounding said anode within said plating vessel, said method comprising immersing said anode by introducing plating solution within said reservoir.
26. The method of claim 24 , further comprising rapidly draining plating solution from said plating vessel after plating is finished.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/071,353 US8048282B2 (en) | 2002-11-13 | 2008-02-20 | Apparatus and method for plating a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003153420A JP4330380B2 (en) | 2003-05-29 | 2003-05-29 | Plating apparatus and plating method |
JPJP2003-153420 | 2003-05-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US12/071,353 Division US8048282B2 (en) | 2002-11-13 | 2008-02-20 | Apparatus and method for plating a substrate |
Publications (1)
Publication Number | Publication Date |
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US20040245112A1 true US20040245112A1 (en) | 2004-12-09 |
Family
ID=33487292
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/843,557 Abandoned US20040245112A1 (en) | 2002-11-13 | 2004-05-12 | Apparatus and method for plating a substrate |
US12/071,353 Expired - Fee Related US8048282B2 (en) | 2002-11-13 | 2008-02-20 | Apparatus and method for plating a substrate |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US12/071,353 Expired - Fee Related US8048282B2 (en) | 2002-11-13 | 2008-02-20 | Apparatus and method for plating a substrate |
Country Status (4)
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US (2) | US20040245112A1 (en) |
JP (1) | JP4330380B2 (en) |
CN (2) | CN1572911B (en) |
TW (1) | TWI363813B (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN1572911A (en) | 2005-02-02 |
CN1572911B (en) | 2010-10-27 |
CN101922034A (en) | 2010-12-22 |
TW200506104A (en) | 2005-02-16 |
TWI363813B (en) | 2012-05-11 |
JP4330380B2 (en) | 2009-09-16 |
US20090045068A1 (en) | 2009-02-19 |
JP2004353048A (en) | 2004-12-16 |
CN101922034B (en) | 2013-03-27 |
US8048282B2 (en) | 2011-11-01 |
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