US20050116276A1 - Metal-insulator-metal (MIM) capacitor and fabrication method for making the same - Google Patents
Metal-insulator-metal (MIM) capacitor and fabrication method for making the same Download PDFInfo
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- US20050116276A1 US20050116276A1 US10/707,225 US70722503A US2005116276A1 US 20050116276 A1 US20050116276 A1 US 20050116276A1 US 70722503 A US70722503 A US 70722503A US 2005116276 A1 US2005116276 A1 US 2005116276A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
A metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
Description
- 1. Field of the Invention
- The present invention relates generally to a metal-insulator-metal (MIM) capacitor. More specifically, the present invention relates to a MIM capacitor having high capacitance density and fabrication method for making the same.
- 2. Description of the Prior Art
- Various capacitive structures are used as electronic elements in integrated circuits such as radio frequency integrated circuits (RFIC), and monolithic microwave integrated circuits (MMIC). Such capacitive structures include, for example, metal-oxide-semiconductor (MOS) capacitors, p-n junction capacitors and metal-insulator-metal (MIM) capacitors. For some applications, MIM capacitors can provide certain advantages over MOS and p-n junction capacitors because the frequency characteristics of MOS and p-n junction capacitors may be restricted as a result of depletion layers that form in the semiconductor electrodes. An MIM capacitor can exhibit improved frequency and temperature characteristics. Furthermore, MIM capacitors are formed in the metal interconnect layers, thereby reducing CMOS transistor process integration interactions or complications.
- An MIM capacitor typically includes an insulating layer, such as a PECVD dielectric, disposed between lower and upper electrodes. To increase the circuit density and reduce the cost, large capacitance density is highly desirable. One known method to increase the capacitance density (ε0k/td) is reducing the dielectric thickness (td). However, this attempt is unsuccessful since reducing the dielectric thickness (td) generates undesired high leakage current and poor RF loss tangent.
- Another approach to increasing the capacitance density is using high dielectric constant (k) dielectrics for MIM capacitors. For example, U.S. Pat. No. 6,232,197, filed Apr. 7, 1999 by Tsai, assigned to United Microelectronics Corp. discloses a metal-insulator-metal for improved mixed-mode capacitor in a logic circuit. The bottom electrode of the capacitor is polycide and the top electrode is metal. The capacitor dielectric layer may be composed of silicon oxide, silicon nitride, silicon oxy-nitride, or tantalum oxide. Silicon oxide, silicon nitride and silicon oxy-nitride may be formed by using low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), or high-density plasma CVD (HDPCVD). The thickness of the capacitor dielectric layer is about from 100 to 500 angstroms.
- U.S. Pat. No. 6,459,117, filed Nov. 26, 2001 by Liou, assigned to Winbond Electronics Corp. discloses an integrated circuit device with high Q MIM capacitor. The MIM capacitor dielectric layer is formed of silicon oxy-nitride (SiOxNy) which has a high dielectric constant relative to that of silicon dioxide. U.S. Pat. No. 6,468,858, filed Mar. 23, 2001 by Lou, assigned to Taiwan Semiconductor Manufacturing Company discloses a process for forming an MIM capacitor structure. Platinum is employed for both the capacitor top plate and storage node structures. A high dielectric constant material such as Ta2O5 or BaTiO3 is used for the capacitor dielectric layer. The Ta2O5 or BaTiO3 capacitor dielectric layer, which is deposited via chemical vapor deposition (CVD), has a thickness between about 50 to 200 Angstroms.
- However, the above-mentioned prior art methods are costly since different dielectric materials are introduced. In light of the forgoing, there is a constant need to provide a new MIM capacitor structure that has high capacitance density and is cost-effective.
- Accordingly, it is the primary object of the present invention to provide an improved MIM capacitor structure and a method for making the same.
- Another object of the present invention is to provide an MIM capacitor having doubled capacitance per unit capacitor and a method for making the same.
- According to the claimed invention, a metal-insulator-metal (MIM) capacitor includes a first metal plate; a first capacitor dielectric layer disposed on the first metal plate and a second metal plate stacked on the first capacitor dielectric layer. The first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor. A second capacitor dielectric layer is disposed on the second metal plate. A third metal plate is stacked on the second capacitor dielectric layer. The second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor. The first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
- According to one aspect of the claimed invention, a method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: providing a substrate; forming, in the order of, a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, and a cap layer over the substrate; etching the cap layer, the third metal layer, the second dielectric layer, the second metal layer, and the first dielectric layer to form an upper capacitor structure consisting of a second metal plate, a second capacitor dielectric layer, and third metal plate; partially covering the upper capacitor structure with a photo mask that defines a first metal plate to formed in the underlying first metal layer; simultaneously etching the first metal layer, a portion of the cap layer atop the second metal plate and the second metal plate of the upper capacitor structure that are not covered by the photo mask; and stripping the photo mask.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary, but are not restrictive, of the invention. Other objects, advantages, and novel features of the claimed invention will become more clearly and readily apparent from the following detailed description when taken in conjunction with the accompanying drawings.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:
-
FIG. 1 is a schematic cross-sectional diagram illustrating an MIM capacitor in accordance with one preferred embodiment of the present invention; and -
FIG. 2 toFIG. 11 are schematic cross-sectional diagrams illustrating the method for making theMIM capacitor 10 as set forth inFIG. 1 in accordance with one preferred embodiment of the present invention. - Please refer to
FIG. 1 .FIG. 1 is a schematic cross-sectional diagram illustrating anMIM capacitor 10 in accordance with one preferred embodiment of the present invention. TheMIM capacitor 10 comprises afirst metal plate 12, which may be defined on abase layer 100 such as an inter-metal dielectric (IMD) layer, but not limited thereto. Thefirst metal plate 12 may be one of the layers of metal interconnection of an integrated circuit. For example, thefirst metal plate 12 may be defined simultaneously with the third layer metal (Metal-3) or fourth layer metal (Metal-4) of metal interconnection of the integrated circuit. Asecond metal plate 14, which is thinner than thefirst metal plate 12, is stacked above thefirst metal plate 12 and is electrically isolated from thefirst metal plate 12 with a first capacitordielectric layer 13. Athird metal plate 16 is stacked above thesecond metal plate 14 and is electrically isolated from thesecond metal plate 14 with a second capacitordielectric layer 15. Acap layer 22 is deposited on thethird metal plate 16. Thecap layer 22 may be made of silicon dioxide or silicon nitride, preferably silicon nitride. The above-saidMIM capacitor 10 is covered with anIMD layer 120. Thefirst metal plate 12, the first capacitordielectric layer 13, and thesecond metal plate 14 constitute a first capacitor (C1) or lower capacitor. Thesecond metal plate 14, the second capacitordielectric layer 15, and thethird metal plate 16 constitute a second capacitor (C2) or upper capacitor. - A plurality of conductive vias are formed in the
IMD layer 120. Thefirst metal plate 12 of the above-saidMIM capacitor 10 is electrically connected to a firstconductive terminal 42 through at least one conductive via 31 that penetrates through theIMD layer 120. Thesecond metal plate 14 is electrically connected to a secondconductive terminal 44 through at least one conductive via 32. Thethird metal plate 16 is electrically connected to the firstconductive terminal 42 through at least one conductive via 33 that penetrates through theIMD layer 120 and thecap layer 22. This invention features a sandwich-like MIM capacitor structure consists of the lower capacitor C1 and the upper capacitor C2. Thefirst metal plate 12, namely, one electrode of the lower capacitor C1, is electrically coupled with thethird metal plate 16, namely, one electrode of the upper capacitor C2. Thesecond metal plate 14 serves as a common electrode of the lower capacitor C1 and the upper capacitor C2 and is interposed between thefirst metal plate 12 and thesecond metal plate 16. - Please refer to
FIG. 2 toFIG. 11 .FIG. 2 toFIG. 11 are schematic cross-sectional diagrams illustrating the method for making theMIM capacitor 10 as set forth inFIG. 1 in accordance with one preferred embodiment of the present invention, wherein like reference numerals refer to similar or corresponding elements, regions, and portions. As shown inFIG. 1 , a substrate (not shown) having thereon abase layer 100 is provided. Thebase layer 100 may be an IMD layer, but not limited thereto. Afirst metal layer 12, a firstcapacitor dielectric layer 13, asecond metal layer 14, a secondcapacitor dielectric layer 15, athird metal layer 16, and acap layer 22 are sequentially deposited on thebase layer 100. According to the preferred embodiment, for example, thefirst metal layer 12 is the third layer metal (Metal-3) of the layers of metal interconnection of the integrated circuit, and thefirst metal layer 12 has a thickness of about 5000 angstroms. Thesecond metal layer 14 and thethird metal layer 16 may be made of any suitable metals such as titanium or titanium nitride alloys. Thesecond metal layer 14 and thethird metal layer 16 has thickness that is thinner than the thickness of thefirst metal layer 12, say 1000 angstroms. Preferably, thecap layer 22 is made of silicon nitride. According to the preferred embodiment, the first capacitor dielectric layer and second capacitor dielectric layer are both made of PECVD dielectric materials. - As shown in
FIG. 3 , a conventional lithographic process and an anisotropic dry etching process are carried out to formed anupper capacitor stack 50 consisting of the firstcapacitor dielectric layer 13, thesecond metal plate 14, the secondcapacitor dielectric layer 15, the third metal plate, and thecap layer 22. Theupper capacitor stack 50 is defined on thefirst metal layer 12. In other words, after etching through the firstcapacitor dielectric layer 13, the dry etching stops on thefirst metal layer 12. - As shown in
FIG. 4 , a photoresist layer (not shown) is then coated on thefirst metal layer 12 and covers theupper capacitor stack 50. The photoresist layer is subjected to exposure and development procedures, thereby formingphoto masks photo mask 60 a defines the pattern and dimension of a first metal plate that serves as one electrode of a lower capacitor to be formed, while thephoto mask 60 b may define the wiring line pattern of Metal-3. Referring toFIG. 5 , a top view presenting thephoto mask 60 a, thefirst metal layer 12, and theperspective cap layer 22 of theupper capacitor stack 50 ofFIG. 4 is illustrated. As specifically indicated inFIG. 5 , thephoto mask 60 a covers most portion of theupper capacitor stack 50. A small portion of thecap layer 22 of theupper capacitor stack 50 is therefore exposed and will be etched away in the following etching process. - As shown in
FIG. 6 , a dry etching process is carried out to etch thefirst metal layer 12 that is not masked by the photo masks 60 a and 60 b andcap layer 22, thereby forming alower capacitor stack 70 andwiring line structure 210. Theupper capacitor stack 50 and thelower capacitor stack 70, which consists of thefirst metal plate 12, the firstcapacitor dielectric layer 13, and thesecond metal plate 14, constitute a sandwichedcapacitor structure 10. Referring briefly toFIG. 7 , a 90-degree rotated view of the sandwichedcapacitor structure 10 ofFIG. 6 and thephoto mask 60 a thereon is illustrated. A portion of thecap layer 22 and the underlyingthird metal plate 16 of theupper capacitor stack 50 that are not covered with thephoto mask 60 a are also etched away in this dry etching process. Using thecap layer 22 as an etching buffer, the dry etching can be stopped on the secondcapacitor dielectric layer 15. In another case, the secondcapacitor dielectric layer 15 may be further etched through and the dry etching stops on thesecond metal plate 14. As best seen inFIG. 5 , it is noted that thethird metal plate 16 has a surface area that is smaller than the surface area of thesecond metal plate 14. The surface area of thesecond metal plate 14 is smaller than the surface area of thefirst metal plate 12. - As shown in
FIG. 8 andFIG. 9 , whereinFIG. 9 shows a 90-degree rotated cross-sectional view of thecapacitor structure 10 ofFIG. 8 , after stripping the photo masks, anIMD layer 120 is deposited on thecapacitor structure 10, thebase layer 100, and on thewiring line structure 210. TheIMD layer 120 may be formed by CVD methods or other suitable techniques. After this, a plurality ofmetal vias IMD layer 120, wherein the metal vias 31 electrically connects with thefirst metal plate 12, the metal via 32 electrically connects with the second metal plate 14 (seeFIG. 9 ), the metal vias 33 electrical connects with thethird metal plate 16, and the metal via 310 electrically connects with thewiring line structure 210. - Finally, as shown in
FIG. 10 andFIG. 11 , whereinFIG. 11 shows a 90-degree rotated cross-sectional view of thecapacitor structure 10 ofFIG. 10 , definition of Metal-4 interconnection is carried out on theIMD layer 120. A firstconductive terminal 42 and a secondconductive terminal 44 are formed above thecapacitor structure 10 on theIMD layer 120. A fourthlevel interconnection line 410 is also defined above the metal via 310. The firstconductive terminal 42 is electrically connected to thefirst metal plate 12 and thethird metal plate 16 through themetal vias second metal plate 14 of thecapacitor structure 10 is electrically connected to the secondconductive terminal 44 through the metal via 32. - Those skilled in the art will readily observe that numerous modifications and alterations of the present invention may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (9)
1. A metal-insulator-metal (MIM) capacitor, comprising:
a first metal plate;
a first capacitor dielectric layer disposed on the first metal plate;
a second metal plate stacked on the first capacitor dielectric layer, wherein the first metal plate, the first capacitor dielectric layer, and the second metal plate constitute a lower capacitor;
a second capacitor dielectric layer disposed on the second metal plate; and
a third metal plate stacked on the second capacitor dielectric layer, wherein the second metal plate, the second capacitor dielectric layer, and the third metal plate constitute an upper capacitor;
and wherein the first metal plate and the third metal plate are electrically connected to a first terminal of the MIM capacitor, while the second metal plate is electrically connected to a second terminal of the MIM capacitor.
2. The MIM capacitor according to claim 1 wherein the second metal plate has a surface area that is smaller than that of the first metal plate.
3. The MIM capacitor according to claim 1 wherein the third metal plate has a surface area that is smaller than that of the second metal plate.
4. The MIM capacitor according to claim 1 wherein the first capacitor dielectric layer is made of PECVD dielectric.
5. The MIM capacitor according to claim 1 wherein the second capacitor dielectric layer is made of PECVD dielectric.
6. The MIM capacitor according to claim 1 wherein the second metal plate has a thickness that is thinner than that of the first metal plate.
7. The MIM capacitor according to claim 6 wherein the second metal plate has a thickness of about 1000 angstroms.
8. The MIM capacitor according to claim 6 wherein the second metal plate comprises titanium.
9-12. (canceled)
Priority Applications (2)
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US10/707,225 US20050116276A1 (en) | 2003-11-28 | 2003-11-28 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
US10/905,472 US6977198B2 (en) | 2003-11-28 | 2005-01-06 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
Applications Claiming Priority (1)
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US10/707,225 US20050116276A1 (en) | 2003-11-28 | 2003-11-28 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
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US10/905,472 Division US6977198B2 (en) | 2003-11-28 | 2005-01-06 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
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US10/707,225 Abandoned US20050116276A1 (en) | 2003-11-28 | 2003-11-28 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
US10/905,472 Expired - Lifetime US6977198B2 (en) | 2003-11-28 | 2005-01-06 | Metal-insulator-metal (MIM) capacitor and fabrication method for making the same |
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US20060160319A1 (en) * | 2004-12-16 | 2006-07-20 | Stmicroelectronics S.A. | Method of fabricating a capacitor by using a metallic deposit in an interconnection dielectric layer of an integrated circuit |
US20060234464A1 (en) * | 2005-04-19 | 2006-10-19 | Stmicroelectronics S.A. | Method for fabricating an integrated circuit comprising a three-dimensional capacitor |
US20060258111A1 (en) * | 2005-04-19 | 2006-11-16 | Stmicroelectronics S.A. | Process for producing an integrated circuit comprising a capacitor |
US20080054329A1 (en) * | 2006-06-08 | 2008-03-06 | Kim Yoon-Hae | Semiconductor device and method of fabricating the same |
US20090059466A1 (en) * | 2007-08-29 | 2009-03-05 | Jeong-Ho Park | Metal-insulator-metal capacitor and method for manufacturing the same |
US20100320568A1 (en) * | 2005-06-27 | 2010-12-23 | Renesas Electronics Corporation | Semiconductor device, rf-ic and manufacturing method of the same |
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US20060160319A1 (en) * | 2004-12-16 | 2006-07-20 | Stmicroelectronics S.A. | Method of fabricating a capacitor by using a metallic deposit in an interconnection dielectric layer of an integrated circuit |
US7563687B2 (en) * | 2004-12-16 | 2009-07-21 | Stmicroelectronics S.A. | Method of fabricating a capacitor by using a metallic deposit in an interconnection dielectric layer of an integrated circuit |
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US20060234464A1 (en) * | 2005-04-19 | 2006-10-19 | Stmicroelectronics S.A. | Method for fabricating an integrated circuit comprising a three-dimensional capacitor |
US20060258111A1 (en) * | 2005-04-19 | 2006-11-16 | Stmicroelectronics S.A. | Process for producing an integrated circuit comprising a capacitor |
US7479424B2 (en) | 2005-04-19 | 2009-01-20 | Stmicroelectronics S.A. | Method for fabricating an integrated circuit comprising a three-dimensional capacitor |
US20100320568A1 (en) * | 2005-06-27 | 2010-12-23 | Renesas Electronics Corporation | Semiconductor device, rf-ic and manufacturing method of the same |
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US20080054329A1 (en) * | 2006-06-08 | 2008-03-06 | Kim Yoon-Hae | Semiconductor device and method of fabricating the same |
US7884409B2 (en) * | 2006-06-08 | 2011-02-08 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US20090059466A1 (en) * | 2007-08-29 | 2009-03-05 | Jeong-Ho Park | Metal-insulator-metal capacitor and method for manufacturing the same |
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US11114524B2 (en) | 2018-10-30 | 2021-09-07 | Samsung Electronics Co., Ltd. | Semiconductor device |
CN110164851A (en) * | 2019-05-08 | 2019-08-23 | 中国科学院微电子研究所 | Manufacturing method, three-dimensional solid-state capacitor and the electronic equipment of three-dimensional solid-state capacitor |
DE102020208681A1 (en) | 2020-07-10 | 2022-01-13 | Robert Bosch Gesellschaft mit beschränkter Haftung | Capacitor arrangement and method for producing a capacitor arrangement |
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US6977198B2 (en) | 2005-12-20 |
US20050118778A1 (en) | 2005-06-02 |
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