US20050181567A1 - Double blanket ion implant method and structure - Google Patents
Double blanket ion implant method and structure Download PDFInfo
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- US20050181567A1 US20050181567A1 US11/094,377 US9437705A US2005181567A1 US 20050181567 A1 US20050181567 A1 US 20050181567A1 US 9437705 A US9437705 A US 9437705A US 2005181567 A1 US2005181567 A1 US 2005181567A1
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000007943 implant Substances 0.000 title claims abstract description 35
- 238000009792 diffusion process Methods 0.000 claims abstract description 54
- 239000002019 doping agent Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims description 23
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- -1 phosphorous ion Chemical class 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
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Abstract
A double blanket ion implant method for forming diffulsion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffulsion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.
Description
- 1. Field of the Invention
- The present invention relates to the field of semiconductor memory devices and, more particularly to a structure having improved static refresh properties in dynamic random access memory devices and a method of making it.
- 2. Description of the Related Art
- Metal oxide semiconductor (MOS) structures are basic electronic devices used in many integrated circuits. One such structure is the metal oxide semiconductor field effect transistor (MOSFET), which is typically formed in a semiconductor substrate by providing a gate structure over the substrate to define a channel region, and by forming source and drain regions on opposing sides of the channel region.
- To keep pace with the current trend toward maximizing the number of circuit devices contained in a single chip, integrated circuit designers continue to design integrated circuit devices with smaller and smaller feature sizes. For example, not too long ago it was not uncommon to have MOSFET devices (including CMOS devices) having channel lengths of 2 microns or more. The current state of the art for production MOSFET devices includes channel lengths of less than a ¼ micron.
- As the channel lengths of MOSFET devices have been reduced, MOSFETS have become more susceptible to certain problems. One common problem is increased junction leakage, a condition affecting the refresh characteristics of a dynamic random access memory (DRAM) memory cell. DRAM is a specific category of random access memory (RAM) containing an array of individual memory cells, where each cell includes a capacitor for holding a charge and a transistor for accessing the charge held in the capacitor. Due to junction leakage, the stored charge must be re-stored in the capacitor on a periodic basis through a process known as refresh. Increased junction leakage leads to a premature depletion of the capacitor's stored charge, necessitating more frequent refresh cycles. Because resources are expended in refreshing the DRAM cells, the longer the period between refresh cycles, the better. The term “pause” is often used to represent the amount of time that a DRAM cell, or group of cells, can maintain their charge without undergoing a refresh operation. That is, how long can the DRAM control circuitry pause between refresh operations and still maintain the stored state of the DRAM memory cell. It is desirable to extend the pause period of, and improve the static refresh of, the DRAM.
- A manufacturer may want to improve static refresh performance of the DRAM to provide customers with the capability to perform more memory operations (e.g., reads and writes) between refresh cycles. This reduces the overhead required to utilize the DRAM. Moreover, a manufacturer may want to improve static refresh performance to improve the operating specifications of the DRAM. For example, DRAMs typically have a low-power or standby specification requiring the DRAM to operate within a maximum current during a low-power mode. Since memory cells must be refreshed during the lower-power mode, reducing the frequency of the refresh operations will improve the DRAM's operational performance for the low-power mode.
-
FIG. 1 illustrates a prior art MOSFETmemory array device 5. Thedevice 5 and its fabrication method are described in U.S. Pat. No. 5,534,449 (Dennison et al.), which is hereby incorporated by reference in its entirety. Briefly, the fabrication of thedevice 5 is initiated by forming agate structure 10 on asubstrate 8. Thesubstrate 8 is typically a bulk silicon substrate, which may have a doped well therein in which transistors are formed. The gate structure 10 (referred to in the '449 patent as a gate line) typically comprises agate oxide 12, aconductive polysilicon layer 14, an overlying WSix layer 16, an overlyingnovellus oxide layer 18 and a Si3N4 capping layer 20. The cross sectional width of this priorart gate structure 10 is 0.40 microns. - Once the
gate structure 10 is formed, thedevice 5 is subjected to oxidizing conditions. This process step is often referred to as a “re-ox” step or a thermal re-ox step. Oxidizedsidewalls gate structure 10, andoxide regions diffusion regions diffusion regions prior art device 5, this blanket phosphorous implant step is performed after the re-ox step to prevent the phosphorous from diffusing too far underneath thegate structure 10, which could cause transistor leakage problems. - The fabrication process of the
device 5 typically includes the formation of oxide ornitride sidewall spacers gate structure 10. Further processing may be performed as described in the '449 patent. Although the MOSFETmemory array device 5 is a vast improvement over earlier memory array devices, it can still benefit from improved static refresh performance. Thus, it is still desirable to improve as much as possible the static refresh performance of the memory device. - The present invention provides a memory array device having improved static refresh over prior art memory array devices.
- The above and other features and advantages of the invention are achieved by a double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device. The method provides a semiconductor substrate with a gate structure formed on its surface. Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices. In addition, the first and second energy levels and doses are substantially lower than an energy level and dose used in a prior art single implantation process.
- The foregoing and other advantages and features of the invention will become more apparent from the detailed description of the preferred embodiments of the invention given below with reference to the accompanying drawings in which:
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FIG. 1 is a fragmentary vertical cross-sectional view of a prior art memory array device conventional diffusion regions; -
FIG. 2 is a fragmentary vertical cross sectional view of an integrated circuit memory array device formed in accordance with the present invention; -
FIG. 3 is a fragmentary vertical cross sectional view of the device illustrated inFIG. 2 at an early stage of formation; -
FIG. 4 is a fragmentary vertical cross sectional view of the device illustrated inFIG. 3 at a later stage of formation; -
FIG. 5 is a fragmentary vertical cross sectional view of the device illustrated inFIG. 4 at a later stage of formation; -
FIG. 6 is a fragmentary vertical cross sectional view of the device illustrated inFIG. 5 at a later stage of formation; -
FIG. 7 is a fragmentary vertical cross sectional view of the device illustrated inFIG. 6 at a later stage of formation; -
FIG. 8 is a graph illustrating the dopant concentration of diffusion regions within the devices illustrated inFIGS. 1 and 2 ; -
FIGS. 9 and 10 are graphs illustrating the static refresh performance of the devices illustrated inFIGS. 1 and 2 ; and -
FIG. 11 is block diagram of a processor-based system including a memory device formed in accordance with the present invention. - The present invention will be described as set forth in the preferred embodiments illustrated in
FIGS. 2-7 and 11. Other embodiments may be utilized and structural or logical changes may be made without departing from the spirit or scope of the present invention. Like items are referred to by like reference numerals. -
FIG. 2 illustrates a portion of an integrated circuit MOSFETmemory array device 105 constructed in accordance with the present invention. Thedevice 105 is preferably used as an access device of a DRAM memory cell. As will be described with reference to FIGS. 3 to 7, thedevice 105 includingdiffusion regions diffusion region 130 comprises tworegions diffusion region 132 comprises tworegions FIGS. 9 and 10 , the uniquely formeddiffusion regions device 105 with improved static refresh performance over the prior device 5 (illustrated inFIG. 1 ). Since the method uses two separate blanket phosphorous ion implant steps, it will be referred to hereinafter as a “double blanket ion implant method.” - Hereinafter, the terms “wafer” and “substrate” are used interchangeably and are to be understood as including silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. Furthermore, when reference is made to a “wafer” or “substrate” in the following description, previous process steps may have been utilized to form regions or junctions in the base semiconductor structure or foundation.
- In addition, no particular order is required for the method steps described below, with the exception of those logically requiring the results of prior steps, for example formation of
spacers gate structure 10 logically requires the prior formation of thegate structure 10 and its sidewalls. Otherwise, enumerated steps are provided below in an exemplary order which may be altered, for instance the several ion implant steps may be rearranged using masking and etching steps as is known in the art. -
FIG. 3 shows the integrated circuit MOSFETmemory array device 105 in accordance with the present invention at an early stage of formation. Agate structure 110 is provided on thesubstrate 8 as is known in the art and described in the '449 patent to Dennison et al. Thesubstrate 8 is typically a bulk silicon substrate, which may have a doped well in which access transistors are to be formed. Thegate structure 110 comprises agate oxide 12, aconductive polysilicon layer 14, an overlying WSix layer 16, anoverlying oxide layer 18 and a Si3N4 capping layer 20. Unlike thegate structure 10 of theprior art device 5 illustrated inFIG. 1 , the cross sectional length of thegate structure 110 may be substantially reduced. For example, the cross sectional length of thegate structure 110 can be substantially reduced to approximately 0.20 microns. An advantage of the present invention is that the length of thegate structure 110 is reduced in comparison to the prior art due to the unique fabrication processing of the present invention (described below). - Referring now to
FIG. 4 ,diffusion regions substrate 8 adjacent the sidewalls of thegate structure 110 and extend laterally away from thegate structure 110. It should be noted that a portion of thediffusion regions gate structure 110. To create thediffusion regions substrate 8 undergoes a first blanket implant step. It is desirable that an n-type be used, which makes thedevice 105 an NMOS device. It is desirable that the n-type dopant be phosphorous. However, it should be noted that other dopants can be used if so desired. For example, other n-type dopants such as arsenic or antimony could be used. If it were desirable for thedevice 105 to be a PMOS device, a p-type dopant such as boron, boron bifluoride (BF2) or borane (B2H10) could be used. This first blanket phosphorous implant may be performed, for example, at an energy level of approximately 15 Kev with a dose of approximately 2×1012 ions/cm2. It should be appreciated that any other suitable dose and energy level can be used for this step. One exemplary range for the first blanket phosphorous implant may include an energy level between approximately 5 Kev to 45 Kev with a dose of approximately 1×1012 ions/cm2 to slightly less than 7×1012 ions/cm2. - It must be noted that this blanket phosphorous implant step is performed prior to a subsequent re-ox step since the energy level and dose is substantially lower than the dose used in the prior art (i.e., energy level ranging from 30 Kev to 60 Kev with a dose ranging from 7×1012 ions/cm2 to 1.5×103 ions/cm2 to provide an average dopant concentration for the
diffusion regions gate structure 110 and without causing subsequent transistor leakage problems. - Referring now to
FIG. 5 , a re-ox step is performed forming oxidizedsidewalls gate structure 110 andoxide regions substrate 8. It should be appreciated that any conventional re-ox process can be performed at this point, such as a thermal re-ox process or a source/drain thermal re-ox process. Referring toFIG. 6 ,diffusion regions substrate 8 at the same location asdiffusion regions second diffusion regions substrate 8 undergoes a second blanket implant step. As with the first blanket implant step, it is desirable that the dopant used is phosphorous. However, it should be noted that other dopants can be used if so desired, particularly if a different conductivity type of thedevice 105 is desired. This second blanket phosphorous implant may be performed at an energy level of approximately 20 Kev with a dose of approximately 4×1012 ions/cm2. It should be appreciated that any other suitable dose and energy level can be used for this step. One exemplary range for the second blanket phosphorous implant may include an energy level between approximately 5 Kev to 60 Kev with a dose of approximately 1×1012 ions/cm2 to 1×1013 ions/cm2. - The oxidized
sidewalls gate structure 110 prevent the second implant from diff-using underneath thegate structure 110, which helps in the formation of theindividual diffusion regions diffusion regions diffusion region 130. Theresultant diffusion region 130 will have two different dopant concentrations, one fromregion 130 a and one fromregion 130 b. There will be a smooth transition between the dopant concentrations of the tworegions diffusion regions diffusion region 132. Theresultant diffulsion region 132 will have two different dopant concentrations, one fromregion 132 a and one fromregion 132 b. There will be a smooth transition between the dopant concentrations of the tworegions diffusion regions device 105 to have substantially better static refresh performance in comparison to the prior art device 5 (FIG. 1 ). - Referring to
FIG. 7 , oxide ornitride sidewall spacers device 105 has twodiffusion regions diffusion regions -
FIG. 8 illustrates anexemplary phosphorous concentration 150 of thesecond diffusion region 132 with respect to its length (illustrated by arrow X). It should be noted that thefirst diffusion region 130 would have a similar concentration, but in a direction opposite the direction indicated by arrow X. Anexemplary phosphorous concentration 152 of the prior art device is also illustrated. From thecurves second diffusion region 132 has a more graded concentration of phosphorous than the prior art diffusion regions (e.g.,region 32 inFIG. 1 ). By more graded, we mean that the net doping concentration versus distance changes gradually. By contrast, as shown bycurve 152, the diffusion region 32 (FIG. 1 ) of the prior art device has an abrupt change in concentration of phosphorous versus distance. That is, the net doping concentration of theprior art curve 152 undergoes a steep change with respect to distance. With a graded dopant concentration of the diffusion regions, the resistance to current flow is less than the diffusion regions of the prior art. Although the invention is not to be bound to any specific theory, it is believed that the more graded concentration of the present invention improves the static refresh of thedevice 105 by improving the junction at the storage node of the DRAM memory cell. - Referring again to
FIG. 7 , it can be seen that the twodiffusion regions gate structure 110. That is, there is afirst region 140 of thefirst diffusion region 130 that resides underneath a portion of thegate structure 110. Similarly, there is asecond region 142 of thesecond diffusion region 132 that resides underneath a portion of thegate structure 110. Theseregions device 105 more robust to reliability stressing. That is, theoverlap regions regions FIG. 1 ), are formed by the first blanket phosphorous implant step (FIG. 4 ). That is, by having the first blanket phosphorous implant step (FIG. 4 ) prior to the re-ox step (FIG. 5 ) some dopant can diffuse underneath thegate structure 110 formingregion device 105 to have the above-mentioned robustness. This is another benefit of the present invention. - A standard measure of refresh performance is known as a “time to un-repairable calculation.” The term “repair” is sometimes used to indicate that a memory cell or memory bit has been repaired by electrical replacement with a redundant element. The terms “un repaired” or “un-repairable” are often used to indicate that the number of failing bits exceeds the capability of repair by redundant elements. In the time to un-repairable test, data is written into the bits of memory cells in the DRAM array. Measurements are taken to determine when a predetermined number of bits have lost their charge and within what time. The time it takes for the bits to lose their charge is commonly referred to as the “time to un-repairable” (TTUR).
- Referring now to
FIGS. 1, 2 and 9. The inventors ran experiments to compare TTUR results using the prior art device 5 (FIG. 1 ) with the results using the device 105 (FIG. 2 ) constructed in accordance with the present invention.FIG. 9 illustrates results from TTUR tests based on finding 100 bits that have lost their charge. The y-axis indicates the probability that 100 bits have lost their charge. The x-axis indicates the time when the charge was lost (and when a refresh operation became necessary). The first set ofdata 160 illustrates the results using thedevice 105 of the present invention. The second set ofdata 162 illustrates the results using thedevice 5 of the prior art. From thedata prior art device 5 at approximately 120 milliseconds, while 100 bits lost their charge using thedevice 105 at approximately 210 milliseconds. That is, there is almost a 90 millisecond improvement in thedevice 105 constructed in accordance with the present invention. It is believed that this improvement is due to the uniquely formeddiffusion regions device 105. - Referring now to
FIGS. 1, 2 and 10.FIG. 10 illustrates results from TTUR tests based on finding 200 bits that have lost their charge. The y-axis indicates the probability that 200 bits have lost their charge. The x-axis indicates the time when the charge was lost (and when a refresh operation became necessary). The first set ofdata 170 illustrates the results using thedevice 105 while the second set ofdata 172 illustrates the results using thedevice 5. From thedata device 105 at approximately 310 milliseconds. That is, there is almost a 70 millisecond improvement. -
FIG. 11 illustrates a block diagram of a processor basedsystem 200 utilizing aDRAM memory circuit 208 constructed in accordance with the present invention. That is, thememory circuit 208 utilizes the MOSFET memory array device 105 (FIG. 2 ) constructed in accordance with the present invention (FIGS. 3 to 7). The processor-basedsystem 200 may be a computer system, a process control system or any other system employing a processor and associated memory. Thesystem 200 includes a central processing unit (CPU) 202, e.g., a microprocessor, that communicates with theDRAM memory circuit 208 and an I/O device 204 over abus 220. It must be noted that thebus 220 may be a series of buses and bridges commonly used in a processor-based system, but for convenience purposes only, thebus 220 has been illustrated as a single bus. A second I/O device 206 is illustrated, but is not necessary to practice the invention. The processor-basedsystem 200 also includes a read-only memory (ROM)circuit 210 and may include peripheral devices such as afloppy disk drive 212 and a compact disk (CD)ROM drive 214 that also communicates with theCPU 202 over thebus 220 as is well known in the art. It should be noted that theCPU 202 can be combined on a single chip with one or moreDRAM memory circuits 208 andROM circuits 210. - While the invention has been described in detail in connection with the preferred embodiments known at the time, it should be readily understood that the invention is not limited to such disclosed embodiments. Rather, the invention can be modified to incorporate any number of variations, alterations, substitutions or equivalent arrangements not heretofore described, but which are commensurate with the spirit and scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is only limited by the scope of the appended claims.
Claims (22)
1-39. (canceled)
40. A method for forming a semiconductor device, said method comprising:
forming a gate structure having sidewalls over a semiconductor substrate;
performing a first blanket implant with a first dopant on said substrate to form a plurality of first diffusion regions adjacent to the sidewalls of said gate structure;
performing a re-ox to oxidize at least a portion of sidewalls of said gate structure; and
performing a second blanket implant with a second dopant on said substrate to form a plurality of second diffusion regions, each of said second diffusion regions being formed within a space previously occupied by a respective one of said plurality of first diffusion regions;
wherein
each of said first diffusion regions is associated with and located beneath a respective second diffusion region;
each of said first diffusion regions includes a portion extending beneath said gate structure; and
none of said plurality of second diffusion regions include any portion which extends beneath said gate structure.
41. The method of claim 40 , wherein said first dopant is a n-type dopant.
42. The method of claim 41 , wherein said first dopant is chosen from a group consisting of phosphorous, arsenic, and antimony.
43. The method of claim 40 , wherein said first dopant is a p-type dopant.
44. The method of claim 43 , wherein said first dopant is chosen from a group consisting of boron, boron bifloride, and borane.
45. The method of claim 40 , wherein said first blanket implant is performed using an energy level ranging between 5 KeV to 45 KeV.
46. The method of claim 45 , wherein said first blanket implant is performed using an energy level of 15 KeV.
47. The method of claim 40 , wherein said first blanket implant is performed using an dosage ranging between 1×1012 ions/cm2 to 7×1012 ions/cm2.
48. The method of claim 47 , wherein said first blanket implant is performed using a dosage of 2×1012 ions/cm2.
49. The method of claim 40 , wherein said second dopant is the same as said first dopant.
50. The method of claim 40 , wherein said second dopant is different from said first.
51. The method of claim 50 , wherein said second dopant is of a different conductivity type as said first dopant.
52. The method of claim 40 , wherein said second blanket implant is performed using an energy level ranging from 5 KeV to 60 KeV.
53. The method of claim 52 , wherein said second blanket implant is performed using an energy level of 20 KeV.
54. The method of claim 40 , wherein said second blanket implant is performed using a dosage ranging from 1×1012 ions/cm2 to 10×1012 ions/cm2.
55. The method of claim 54 , wherein said second blanket implant is performed using a dosage of 4×1012 ions/cm2.
56. A method of forming a semiconductor device, comprising:
providing a gate structure disposed over a surface of said semiconductor substrate;
performing a first blanket implant into the substrate to form a plurality of diffusion regions underneath the surface of the substrate adjacent to the gate structure, with a portion of each diffusion regions extending underneath a portion of said gate structure, thereby forming respective first and second overlap regions;
performing a re-ox step to form oxidized sidewalls on the gate structure and oxide regions on the substrate; and
performing a second blanket implant through the oxide regions and into the substrate at locations of the first and second diffusion regions to add additional dopant to the first and second diffusion regions, wherein the oxidized sidewalls on the gate structure prevents the additional dopant from diffusing underneath the gate structure, thereby forming respective diffusion regions on opposite sides of the gate structure each having a graded dopant concentration.
57. The method of claim 56 , wherein said first dopant is chosen from a group consisting of: phosphorous, arsenic, and antimony.
58. The method of claim 56 , wherein said second dopant is chosen from a group consisting of: phosphorous, arsenic, and antimony.
59. The method of claim 56 , wherein said first dopant is chosen from a group consisting of: boron, boron bifloride, and borane.
60. The method of claim 56 , wherein said second dopant is chosen from a group consisting of: boron, boron bifloride, and borane.
Priority Applications (1)
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US11/094,377 US20050181567A1 (en) | 2000-03-21 | 2005-03-31 | Double blanket ion implant method and structure |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US09/532,094 US6482707B1 (en) | 2000-03-21 | 2000-03-21 | Method of improving static refresh |
US10/285,488 US6693014B2 (en) | 2000-03-21 | 2002-11-01 | Method of improving static refresh |
US10/768,081 US7119397B2 (en) | 2000-03-21 | 2004-02-02 | Double blanket ion implant method and structure |
US11/094,377 US20050181567A1 (en) | 2000-03-21 | 2005-03-31 | Double blanket ion implant method and structure |
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US10/768,081 Division US7119397B2 (en) | 2000-03-21 | 2004-02-02 | Double blanket ion implant method and structure |
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US20050181567A1 true US20050181567A1 (en) | 2005-08-18 |
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US09/822,249 Expired - Lifetime US6410951B2 (en) | 2000-03-21 | 2001-04-02 | Structure for improving static refresh |
US10/285,488 Expired - Lifetime US6693014B2 (en) | 2000-03-21 | 2002-11-01 | Method of improving static refresh |
US10/768,081 Expired - Lifetime US7119397B2 (en) | 2000-03-21 | 2004-02-02 | Double blanket ion implant method and structure |
US11/094,377 Abandoned US20050181567A1 (en) | 2000-03-21 | 2005-03-31 | Double blanket ion implant method and structure |
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US10/285,488 Expired - Lifetime US6693014B2 (en) | 2000-03-21 | 2002-11-01 | Method of improving static refresh |
US10/768,081 Expired - Lifetime US7119397B2 (en) | 2000-03-21 | 2004-02-02 | Double blanket ion implant method and structure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100009506A1 (en) * | 2008-07-10 | 2010-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dopant implantation method and integrated circuits formed thereby |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482707B1 (en) * | 2000-03-21 | 2002-11-19 | Micron Technology, Inc. | Method of improving static refresh |
US6670682B1 (en) * | 2002-08-29 | 2003-12-30 | Micron Technology, Inc. | Multilayered doped conductor |
JP2004363486A (en) * | 2003-06-06 | 2004-12-24 | Renesas Technology Corp | Semiconductor device with trench isolation and its manufacturing method |
KR100541373B1 (en) * | 2003-06-30 | 2006-01-11 | 주식회사 하이닉스반도체 | Method for improved refresh time of semiconductor device |
US7135373B2 (en) * | 2003-09-23 | 2006-11-14 | Texas Instruments Incorporated | Reduction of channel hot carrier effects in transistor devices |
FR2872958B1 (en) * | 2004-07-12 | 2008-05-02 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING STRUCTURED THIN FILM AND THIN FILM OBTAINED BY SUCH A METHOD |
US8674434B2 (en) * | 2008-03-24 | 2014-03-18 | Micron Technology, Inc. | Impact ionization devices |
CN104425359B (en) * | 2013-09-04 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4366613A (en) * | 1980-12-17 | 1983-01-04 | Ibm Corporation | Method of fabricating an MOS dynamic RAM with lightly doped drain |
US5376566A (en) * | 1993-11-12 | 1994-12-27 | Micron Semiconductor, Inc. | N-channel field effect transistor having an oblique arsenic implant for lowered series resistance |
US5439835A (en) * | 1993-11-12 | 1995-08-08 | Micron Semiconductor, Inc. | Process for DRAM incorporating a high-energy, oblique P-type implant for both field isolation and punchthrough |
US5534449A (en) * | 1995-07-17 | 1996-07-09 | Micron Technology, Inc. | Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry |
US5719424A (en) * | 1995-10-05 | 1998-02-17 | Micron Technology, Inc. | Graded LDD implant process for sub-half-micron MOS devices |
US5757045A (en) * | 1996-07-17 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company Ltd. | CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation |
US5998274A (en) * | 1997-04-10 | 1999-12-07 | Micron Technology, Inc. | Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor |
US6078071A (en) * | 1998-06-11 | 2000-06-20 | Fujitsu Quantum Devices Limited | High-speed compound semiconductor device having an improved gate structure |
US6291280B1 (en) * | 1998-11-12 | 2001-09-18 | Micron Technology, Inc. | CMOS imager cell having a buried contact and method of fabrication |
US6410951B2 (en) * | 2000-03-21 | 2002-06-25 | Micron Technology, Inc. | Structure for improving static refresh |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR940004446B1 (en) * | 1990-11-05 | 1994-05-25 | 미쓰비시뎅끼 가부시끼가이샤 | Method of making semiconductor device |
US5811338A (en) * | 1996-08-09 | 1998-09-22 | Micron Technology, Inc. | Method of making an asymmetric transistor |
-
2000
- 2000-03-21 US US09/532,094 patent/US6482707B1/en not_active Expired - Lifetime
-
2001
- 2001-04-02 US US09/822,249 patent/US6410951B2/en not_active Expired - Lifetime
-
2002
- 2002-11-01 US US10/285,488 patent/US6693014B2/en not_active Expired - Lifetime
-
2004
- 2004-02-02 US US10/768,081 patent/US7119397B2/en not_active Expired - Lifetime
-
2005
- 2005-03-31 US US11/094,377 patent/US20050181567A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4366613A (en) * | 1980-12-17 | 1983-01-04 | Ibm Corporation | Method of fabricating an MOS dynamic RAM with lightly doped drain |
US5376566A (en) * | 1993-11-12 | 1994-12-27 | Micron Semiconductor, Inc. | N-channel field effect transistor having an oblique arsenic implant for lowered series resistance |
US5439835A (en) * | 1993-11-12 | 1995-08-08 | Micron Semiconductor, Inc. | Process for DRAM incorporating a high-energy, oblique P-type implant for both field isolation and punchthrough |
US5534449A (en) * | 1995-07-17 | 1996-07-09 | Micron Technology, Inc. | Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry |
US5747855A (en) * | 1995-07-17 | 1998-05-05 | Micron Technology, Inc. | CMOS integrated circuitry with Halo and LDD regions |
US5719424A (en) * | 1995-10-05 | 1998-02-17 | Micron Technology, Inc. | Graded LDD implant process for sub-half-micron MOS devices |
US5757045A (en) * | 1996-07-17 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company Ltd. | CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation |
US5998274A (en) * | 1997-04-10 | 1999-12-07 | Micron Technology, Inc. | Method of forming a multiple implant lightly doped drain (MILDD) field effect transistor |
US6078071A (en) * | 1998-06-11 | 2000-06-20 | Fujitsu Quantum Devices Limited | High-speed compound semiconductor device having an improved gate structure |
US6291280B1 (en) * | 1998-11-12 | 2001-09-18 | Micron Technology, Inc. | CMOS imager cell having a buried contact and method of fabrication |
US6410951B2 (en) * | 2000-03-21 | 2002-06-25 | Micron Technology, Inc. | Structure for improving static refresh |
US6482707B1 (en) * | 2000-03-21 | 2002-11-19 | Micron Technology, Inc. | Method of improving static refresh |
US6693014B2 (en) * | 2000-03-21 | 2004-02-17 | Micron Technology, Inc. | Method of improving static refresh |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100009506A1 (en) * | 2008-07-10 | 2010-01-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dopant implantation method and integrated circuits formed thereby |
US8008158B2 (en) * | 2008-07-10 | 2011-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dopant implantation method using multi-step implants |
Also Published As
Publication number | Publication date |
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US6410951B2 (en) | 2002-06-25 |
US20030054603A1 (en) | 2003-03-20 |
US6693014B2 (en) | 2004-02-17 |
US20010023948A1 (en) | 2001-09-27 |
US6482707B1 (en) | 2002-11-19 |
US20040150035A1 (en) | 2004-08-05 |
US7119397B2 (en) | 2006-10-10 |
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