US20050285609A1 - Probe unit and its manufacturing method - Google Patents
Probe unit and its manufacturing method Download PDFInfo
- Publication number
- US20050285609A1 US20050285609A1 US11/168,319 US16831905A US2005285609A1 US 20050285609 A1 US20050285609 A1 US 20050285609A1 US 16831905 A US16831905 A US 16831905A US 2005285609 A1 US2005285609 A1 US 2005285609A1
- Authority
- US
- United States
- Prior art keywords
- layer
- probe unit
- substrate
- layers
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Abstract
A probe unit comprises a substrate and a lead formed on the substrate and having a tip part projecting from an edge of the substrate and contacting to an electrode of a sample, and a thick part of which thickness is thicker than the tip part. The probe unit can make continuity with a sample firmly with a proper contact pressure while lowering electrical resistance of leads.
Description
- This application is based on Japanese Patent Application 2004-190963, filed on Jun. 29, 2004, the entire contents of which are incorporated herein by reference.
- A) Field of the Invention
- The present invention relates to a probe unit and a manufacturing method thereof.
- B) Description of the Related Art
- Conventionally a probe unit having a plurality of leads projecting from a substrate and contacting with electrodes of a sample is known. In a probe unit disclosed in Japanese Laid-open Patent No.2002-286755 (hereinafter called the Patent Document 1), tips of leads and their peripheral areas are bent by overdrive because the leads are projecting from a substrate. Therefore, the tips of the leads and the electrodes of the sample can be conducted firmly with a proper contacting pressure.
- In the conventional probe unit as disclosed in the
Patent Document 1, thicknesses of the leads are uniformed. Moreover, material for the leads and the thicknesses of the leads are designed in accordance with durability of the projection parts of the leads from the substrate and the above-described contacting pressure. Therefore, it is not easy for the probe unit according to thePatent Document 1 to be designed to have low electric resistance by forming the leads with material having low electric resistance and by making the thicknesses thick. In addition to that, widths of the leads are designed in accordance with a pitch of the electrodes of the sample. Therefore, narrowing the widths of the leads cannot lower the electric resistance of the leads. In this type of the probe unit, a frequency range that can be used in a continuity test will be narrow because of a high conductor loss. - On the other hand, Japanese Laid-open Patent No.2003-57266 discloses a probe unit wherein leads are formed on a film, tips of the leads are projecting from the film, and the tips and the middle parts of the leads are made of different materials. In the probe unit according to the
Patent Document 2, middle parts of the leads can be made of material having lower electrical resistance than their tips. That is, the frequency range of a signal that can be used in a continuity test can be widened by lowering conductor losses because the electrical resistance of the leads can be lowered. - However, the probe unit according to the
Patent Document 2 is manufactured by forming leads on a supporting metal plate, contacting parts of the leads that are not projecting from a film with the film by adhesive, and separating the supporting metal plate. The leads on the supporting metal plate side will be plane because they are formed on the supporting metal plate. Moreover, the adhesive contacts the leads and the film; therefore, large steps cannot be formed on the film side of the leads. That is, widths of the leads in the probe unit according to thePatent Document 2 cannot be designed freely to lower the electrical resistance of the leads. - It is an object of the present invention to provide a probe unit and its manufacturing method which can make continuity with a sample firmly with a proper contact pressure while lowering electrical resistance of leads.
- According to one aspect of the present invention, there is provided a probe unit, comprising: a substrate; and a lead formed on the substrate and having a tip part projecting from an edge of the substrate and contacting to an electrode of a sample, and a thick part of which thickness is thicker than the tip part.
-
FIG. 1A is a cross sectional view showing a probe cut in line X1-X1 inFIG. 1B according to a first embodiment of a probe unit of the present invention, andFIG. 1B is a plan view showing the probe. -
FIG. 2A is a side view of the probe according to the first embodiment of the probe unit of the present invention, andFIG. 2B is a plan view showing the probe. -
FIG. 3A is a side view showing a first layer of the probe according to the first embodiment of the probe unit of the present invention, andFIG. 38 is a plan view. -
FIG. 4 is a schematic diagram of the probe of a probe unit according to the first embodiment of the probe unit of the present invention. -
FIG. 5 is a schematic diagram of the probe of the probe unit according to the first embodiment of the probe unit of the present invention, -
FIG. 6 is a schematic diagram of the probe of the probe unit according to the first embodiment of the probe unit of the present invention. -
FIG. 1 to7A FIG. 2 are schematic diagrams showing a continuity test by the probe of the probe unit according to the first embodiment of the probe unit of the present invention.7B -
FIG. 8 is a schematic diagram of the probe of the probe unit according to the first embodiment of the probe unit of the present invention. -
FIG. 9A is a cross sectional view showing a probe cut in line X2-X2 inFIG. 9B according to a second embodiment of the probe unit of the present Invention, andFIG. 9B is a plan view showing the probe. -
FIG. 10A andFIG. 10B are schematic diagrams showing a continuity test by the probe of the probe unit according to the second embodiment of the probe unit of the present invention. -
FIG. 11 is a schematic diagram of the probe of a probe unit according to a third embodiment of the probe unit of the present invention. -
FIG. 12 is a schematic diagram of the probe of the probe unit according to the third embodiment of the probe unit of the present invention. -
FIG. 13 is a schematic diagram of the probe of the probe unit according to the third embodiment of the probe unit of the present invention. -
FIG. 14 are schematic diagrams for explaining a manufacturing method according to a first embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 15 are schematic diagrams for explaining a manufacturing method according to the first embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 16 are schematic diagrams for explaining a manufacturing method according to a second embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 17 are schematic diagrams for explaining a manufacturing method according to a third embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 18 are schematic diagrams for explaining a manufacturing method according to a fourth embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 19 are schematic diagrams for explaining a manufacturing method according to a fifth embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 20 are schematic diagrams for explaining a manufacturing method according to a sixth embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 21 are schematic diagrams for explaining a manufacturing method according to a seventh embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 22 are schematic diagrams for explaining a manufacturing method according to the seventh embodiment of the method for manufacturing the probe unit of the present invention. -
FIG. 23 are schematic diagrams for explaining a manufacturing method according to an eighth embodiment of the method for manufacturing the probe unit of the present invention. -
FIGS. 1A and 1B are schematic diagram showing a structure of aprobe unit 1 according to a first embodiment of a probe unit of the present invention. Theprobe unit 1 is used for testing an electrical property of asample 5 such as a liquid crystal panel, an integrated circuit (IC), etc. by electrically contactingprobes 4 withelectrodes 5 a of the sample 5 (refer toFIG. 7 ). Theprobe unit 1 hasthin parts 4 b designed in accordance with a contact pressure with theelectrodes 5 a of thesample 5 at a time of later-described overdrive andthick parts 4 c designed in accordance with electric resistance of theprobes 4. Therefore, theprobe unit 1 can electrically contact theprobes 4 with theelectrodes 5 a of thesample 5 at a proper contact pressure, and the electrical resistance of theprobes 4 can be lowered. - A
substrate 2 is made of ceramic and formed in a shape of a plate. Thesubstrate 2 may be made of non-organic material such as glass ceramic, glass, silicon and metal or resin. - The plurality of
probes 4 are formed on thesubstrate 2. Each one of theprobes 4 as leads has atip 4 a, thethin part 4 b and thethick part 4 c. Thetip 4 a is projecting from anedge 2 a of thesubstrate 2. Thethin part 4 b is formed between thetip 4 a and thethick part 4 c. Thethin part 4 b is formed to have the same thickness as thetip 4, and thethick part 4 c is thicker than thetip 4 a and thethin part 4 b. Although in this embodiment, aboundary 40 between thethin part 4 b and thethick part 4 c is positioned on thesubstrate 2, and a step (difference in levels) 42 between thethin part 4 b and thethick part 4 c is formed on a surface of theprobe 4 on the opposite side of thesubstrate 2, an outline shape of theprobe unit 1 is not limited to that. For example, theboundary 40 between thethin part 4 b and thethick part 4 c may not be positioned on thesubstrate 2 as In the later-describedprobe unit 161 according to a second embodiment (refer toFIG. 9 ), or aslope 42 may be formed on the surface of theprobe 4 on thesubstrate 2 side as aprobe unit 111 shown inFIG. 2 . - The
probe 4 has afirst layer 6, asecond layer 8 and asurface layer 10. The first layer as a lower layer of thetip 4 a, thethin part 4 b and thethick part 4 c is formed on thesubstrate 2. Anedge 6 a of thefirst layer 6 as thetip 4 a is projecting from theedge 2 a of thesubstrate 2. The part of thefirst layer 6 projecting from theedge 2 a of thesubstrate 2 will bend in a condition that thetip 4 a of theprobe 4 contacts with theelectrode 5 a of thesample 5 by the later-described overdrive (refer toFIG. 7 ). Therefore, material and thickness of thefirst layer 6 is designed preferably in accordance with a contact pressure between thetip 4 a and theelectrode 5 a of thesample 5 by the overdrive and its durability. - Table 1 shows a result of an experiment testing a relationship between a contact pressure (W) and stress (a) for each overdrive distance (OD). The experiment used the
first layer 6 having width (B) of 50 □m, of which the part projecting from theedge 2 a of thesubstrate 2 is set to have length (L) of 1.2 mm, Young's modulus (E) of NiFe is 21414 kgf/mm2, and the yield point strength is 130 kgf/mm2.TABLE 1 L B E T OD W □ mm □m kgf/mm2 mm mm gf kgf/mm2 1.2 50 21414 0.02 0.05 0.062 22.306 1.2 50 21414 0.02 0.10 0.124 44.613 1.2 50 21414 0.02 0,15 0.186 66.919 1.2 50 21414 0.02 0.20 0.248 89.225 1.2 50 21414 0.03 0.05 0.209 33.459 1.2 50 21414 0.03 0.10 0.418 66.919 1.2 50 21414 0.03 0.15 0.627 100.378 1.2 50 21414 0.03 0.20 0.836 133.838 - According to the result, the stress (a) is smaller than the yield point strength when the overdrive distance (OD) is in a range from 0.05 mm to 0.2 mm in the
first layer 6 with the thickness (T) of 0.02 mm. For example, the stress (a) is 89.225 kgf/mm2 and smaller than the yield point strength of 130 kgf/mm2 when the overdrive distance (OD) is 0.2 mm. On the other hand, in thefirst layer 6 with the thickness (T) of 0.03 mm, the stress (a) is 133.838 kgf/mm2 and larger than the yield point strength of 130 kgf/mm2 when the overdrive distance (OD) is 0.2 mm. That is, thefirst layer 6 of theprobe unit 1 will be made of NiFe and designed to have the thickness of 0.02 mm and the width of 50 □m, and the length of the part projecting from theedge 2 a of thesubstrate 2 is designed to 1.2 mm. Further, material for forming thefirst layer 6 is not limited to NiFe. For example, the material for forming thefirst layer 6 may be Ni alloy such as NiCo, NiMn, etc. or Ni. - The
second layer 8 is formed on thefirst layer 6. Thesecond layer 8 as an upper layer of thethick part 4 c will not bent by the overdrive. Therefore, material and thickness of thesecond layer 8 is preferably designed in accordance with electrical resistance of theprobe 4. For example, thesecond layer 8 is formed of Cu. Moreover, thesecond layer 8 is preferably formed of material having electrical resistance lower than that of the material used for thefirst layer 6, but the material is not limited to Cu. For example, the material for thesecond layer 8 may be the same material as for thefirst layer 6, i.e., NiFe, or may be Ni alloy such as NiMn, etc., or Ni, Au, Al, etc. - The
surface layer 10 is formed of Au on thefirst layer 6 and on thesecond layer 8. Further, thesurface layer 10 is preferably formed of material having lower electric resistance, but it is not limited to Au. For example, the material for thesurface layer 10 may be Au alloy, Pd, Rh, Ir, etc. The shape and the position of thesurface layer 10 is not limited to those shown InFIG. 1 . For example, thesurface layer 10 covering the surfaces of thefirst layer 6 and thesecond layer 8 as in aprobe unit 121 shown inFIG. 4 . Moreover, afirst surface layer 10 a and asecond surface layer 10 b may be formed respectively on thefirst layer 6 and thesecond layer 8 as in aprobe unit 131 shown inFIG. 5 , or thesurface layer 10 may be formed on either one of thefirst layer 6 and thesecond layer 8. Furthermore, as long as satisfying a specification of testing thesample 5, a surface layer may be omitted as in aprobe unit 141 shown inFIG. 6 . - Table 2 shows relationships between thickness (T1) of the
first layer 6, thickness (T2) of thesecond layer 8 and thickness (T3) of thesurface layer 10 and electrical resistance (R) of probes A to C. The probes' width is 50 □m, length of the part (projection) projecting from theedge 2 a of thesubstrate 2 is 1.2 mm, and length of a part (wiring) formed on thesubstrate 2 is 3.0 mm. Electrical resistance (R1) of thefirst layer 6 formed of NiFe is calculated by assuming that resistivity of NiFe is 20 □□cm. Electrical resistance (R2) of thesecond layer 8 formed of Cu is calculated by assuming that resistivity of Cu is 2 □□cm. Electrical resistance (R3) of thesurface layer 10 formed of Au is calculated by assuming that resistivity of Au is 3 □□cm. Further, the layer having the thickness of “0” means that the probe does not have the layer. R4 represents resistance of each of the projection and the wiring.TABLE 2 PROBE A PROBE B PROBE C PROJECT WIRING PROJECT WIRING PROJECT WIRING T1 (□m) 20 20 20 20 20 20 T2 (□m) 0 0 0 40 0 40 T3 (□m) 0 0 0 0 3 3 R1 (□) 0.240 0.600 0.240 0.600 0.240 0.600 R2 (□) 0.030 0.030 R3 (□) 0.240 0.600 R4 (□) 0.240 0.600 0.240 0.029 0.120 0.027 R (□) 0.840 0.269 0.147 - According to the result shown in TABLE 2, the probe C having the
second layer 8 and thesurface layer 10 can lower the electric resistance by 0.693 □ comparing to the probe A without the second layer and the surface layer. The probe B having thesecond layer 8 without thesurface layer 10 can lower the electric resistance by 0.571 □ comparing to the probe A without the second layer and the surface layer. -
FIG. 1 to7A FIG. 2 are schematic diagram for explaining a testing method of an electric property of the7B sample 5 using theprobe unit 1. Theprobes 4 are electrically continued with theelectrodes 5 a of thesample 5 by contacting eachtip 4 a of theprobes 4 with eachelectrode 5 a of thesample 5 one by one. - First, as shown in
FIG. 1 and7A FIG. 1, the7B probe unit 1 is aligned toward thesample 5 so that eachtip 4 a of theprobes 4 corresponds to eachelectrode 5 a of thesample 5 one by one. - Next, as shown in
FIG. 2 and7A FIG. 2, the7B probe unit 1 is approached to thesample 5 so that thetips 4 a of theprobes 4 are contacted to theelectrodes 5 a. By further approaching theprobe unit 1 to thesample 5, i.e., overdriven theprobe unit 1, thetips 4 a and parts of thethin parts 4 b of theprobes 4 are bent by the overdrive. At that time, thetips 4 a of theprobes 4 and theelectrodes 5 a of thesample 5 can be contacted at a proper contact pressure if the material and thickness of thefirst layer 6 are designed in accordance with the contact pressure of the overdrive. - Next, while the
probes 4 and theelectrodes 5 a of thesample 5 are electrically continued, test signals are input from a testing device to theelectrodes 5 a via theprobes 4 to test an electric property of thesample 5. At that time, if the electrical resistance of theprobes 4 is low, thesample 5 can be tested by using the testing signal at a wide range of frequencies. - When the
sample 5 and theprobe unit 1 are separated after the test, the shape of theprobes 4 will return to a condition before the test by their elasticity. - By the
probe unit 1 according to the first embodiment of the probe unit of the present invention, thetips 4 a of theprobes 4 and the parts of thethin parts 4 b are bent by the overdrive in the condition that thetips 4 a are contacted to theelectrodes 5 a of thesample 5 because thetips 4 a and the parts of thethin parts 4 b of theprobes 4 are projecting from theedge 2 a of thesubstrate 2. Therefore, if the material and thickness of thefirst layer 6 are designed in accordance with the contact pressure of the overdrive, thetips 4 a of theprobes 4 and theelectrodes 5 a of thesample 5 can be contacted firmly at a proper contact pressure. - If the material and thickness of the
first layer 6 are designed in accordance with the contact pressure of the overdrive, it is not easy to design theprobes 4 to have small electric resistance. However, each of thethick part 4 c of theprobe unit 1 has thesecond layer 8. Therefore, thickness of thethick part 4 c will be thickened by the thickness of thesecond layer 8. In addition to that, the material and thickness of thesecond layer 8 can be designed in accordance with the electrical resistance of the probes 4: therefore, the electrical resistance of theprobes 4 can be lowered. That is, the conductor losses of theprobes 4 can be deceased. - Moreover, each of the
probes 4 has thesurface layer 10 formed of Au having lower electrical resistance. Therefore, the electrical resistance of theprobe 4 can be lowered. Especially, an electrical signal at a high frequency flows in thesurface layer 10 near the surface of theprobe 4 by the skin effect; therefore, conductor losses toward the high frequency signal can be effectively decreased. - Further, although the
probe 4 has thefirst layer 6, thesecond layer 8 and thesurface layer 10 in the above-described embodiment, the structure of theprobe 4 is not limited to that, For example, as in aprobe unit 151 shown inFIG. 8 , theprobes 4 may have a third layer as an upper layer of thethick part 4 c. - Next, a second embodiment of a probe unit of the present invention will be explained. A
probe unit 161 according to the second embodiment is different from theprobe unit 1 according to the first embodiment in its shape of probes. The similar parts as in the first embodiment are marked with the same reference numbers as in the first embodiment and their explanation will be omitted. -
FIG. 9A andFIG. 5B schematically show a structure of theprobe unit 161 according to the second embodiment of the probe unit of the present invention. Thethick part 4 c of eachprobe 4 of theprobe unit 161 is projecting from theedge 2 a of thesubstrate 2. That is, the boundary between thethin part 4 b and thethick part 4 c is positioned in a part where theprobe 4 is projecting from theedge 2 a of thesubstrate 2. Although thesecond layer 8 and thesurface layer 10 as thethick part 4 c are projecting from theedge 2 a of thesubstrate 2, the structure of theprobe 4 is not limited to that. For example, only thesurface layer 10 may be projecting from theedge 2 a of thesubstrate 2, or only thesecond layer 8 may be projecting from theedge 2 a of thesubstrate 2 in a probe unit without thesurface layer 10 as in theprobe unit 141. -
FIG. 10A andFIG. 10B are schematic diagrams showing conditions when theprobe unit 161 is overdriven in a continuity test of thesample 5. Thetips 4 a and thethin parts 4 of theprobes 4 are bent by the overdrive; however, the parts of thethick parts 4 c projecting from theedge 2 a of thesubstrate 2 are hardly bent by the overdrive. That is, bending near theedge 2 a of thesubstrate 2 is small. - When the parts projecting from the
edge 2 a of thesubstrate 2 are bent by the overdrive, force in a direction to separate theprobes 4 from thesubstrate 2 will be imposed on theprobes 4. Especially, when theprobes 4 near theedge 2 a of thesubstrate 2 are bent, the force will be increased. However, thethick parts 4 c are projecting from theedge 2 a of thesubstrate 2 in theprobe unit 161 according to the second embodiment of the probe unit of the present invention, bending of theprobes 4 near theedge 2 a of thesubstrate 2 is small. Therefore, the force in a direction to separate theprobes 4 from thesubstrate 2 will be decreased, and the separation of theprobes 4 from thesubstrate 2 can be avoided. - Next, a third embodiment of a probe unit of the present invention will be explained. A
probe unit 171 according to the third embodiment is different from theprobe unit 1 according to the first embodiment in its shape of probes. The similar parts as in the first embodiment are marked with the same reference numbers as in the first embodiment and their explanation will be omitted. -
FIG. 11 schematically shows a structure of theprobe unit 171 according to the third embodiment of the probe unit of the present invention. - Each
thin layer 12 is formed of NiFe and on thesubstrate 2. Oneend 12 a of thethin layer 12 as thetip 4 a is projecting from theedge 2 a of thesubstrate 2. Since the part projecting from theedge 2 a of thesubstrate 2 is bent by the overdrive, material and thickness of thethin layer 12 are designed preferably in accordance with the contact pressure of thetips 4 a and theelectrodes 5 a of thesample 5 at the time of the overdrive and their durability. Further, the material for thethin layer 12 is not limited to NiFe, For example, the material for thethin layer 12 may be Ni alloy such as NiCo, NiMn, etc. or Ni. - A
thick layer 14 is formed of Cu to be thicker than thethin layer 12. Thethick layer 14 is connected to anotherend 12 b of thethin layer 12. Although it is preferable to form thethick layer 14 of the material having lower electrical resistance than that used for forming thethin layer 12, it is not limited to Cu. For example, the material for thethick layer 14 may be the same material used for forming thethin layer 12, Ni alloy such as NiCo, NiMn, etc, or Ni, Au, Al, etc. As in aprobe unit 12 shown inFIG. 12 , the anotherend 12 b of thethin layer 12 may be buried in thethick layer 14. Moreover, as in aprobe unit 191 shown inFIG. 13 , thethin layer 12 may be formed to cover a part on the side of oneend 14 a of thethick layer 14. - By the
probe unit 171 according to the third embodiment of the probe unit of the present invention, thethin layer 12 corresponding to thetips 4 a and thethin parts 4 b of theprobes 4 are projecting from theedge 2 a of thesubstrate 2. Therefore, if the material and thickness of thethin layer 12 are designed in accordance with the contact pressure between thetips 4 a and theelectrodes 5 a of thesample 5 at the time of the overdrive, thetips 4 a of theprobes 4 and theelectrodes 5 a of thesample 5 can be contacted firmly at a proper contact pressure. - Moreover, since the
thick layer 14 is formed thicker than thethin layer 12, the electrical resistance of theprobes 4 can be decreased. Furthermore, if the material and thickness of thethick layer 14 are designed in accordance with the electrical resistance of theprobes 4, the electrical resistance of theprobes 4 can be further decreased. - Although the
probe 4 has thesurface layer 10 formed of the material having the lower electrical resistance (e.g., Au) in the above-described embodiment, thesurface layer 10 may be formed on the surface of thetip 4 a with material harder than the inside of thetip 4 a. When theprobe 4 is overdriven, thehard surface layer 10 is contacted with theelectrode 5 a of thesample 5; therefore, wearing down of thetip 4 a of theprobe 4 by the contact with theelectrode 5 a of the sample can be restrained. - Next, manufacturing methods of the probe units according to a plurality of embodiments will be explained.
-
FIGS. 14 and 15 are schematic diagrams for explaining a manufacturing method according to a first embodiment of the method for manufacturing theprobe unit 1 according to the first embodiment of the probe unit of the present invention. The similar parts as in the first embodiment are marked with the same reference numbers as in the first embodiment and their explanation will be omitted. - First, a
hollow part 200 in a shape of a groove is formed on thesubstrate 2 made of ceramic as shown inFIG. 1. The14A substrate 2 may be formed of non-organic material such as glass ceramic, glass, silicon, metal, etc., or resin. The hollow part may be formed by removing a part of the substrate In a shape of a plate by a cutting process or may be formed by forming thesubstrate 2 having thehollow part 200. - Next, a
sacrificial layer 204 is formed of Cu for filling up the hollow 200 as shown inFIG. 1. The14A sacrificial layer 204 may be formed of material other than Cu if the material can be removed in the later-described removing process for removing thesacrificial layer 204. - Next, on the
substrate 2 and thesacrificial layer 204,first layers 6, each of which is in a shape of long bar (or stick), are formed in a direction crossing a longitudinal direction of thehollow part 200 to position oneend 6 a of eachfirst layer 6 on thesacrificial layer 204. For example, afirst seed layer 206 is formed on thesubstrate 2 and thesacrificial layer 204 by a sputter, and a first resistlayer 208 exposing regions where thefirst layers 6 will be formed is formed on theseed layer 206 as shown inFIG. 2. Thereafter, the14A first layers 6 are formed as shown inFIG. 14A 3 by plating NiFe on theseed layer 206 exposing through the first resistlayer 208. The first resistlayer 208 is formed by arranging a mask with a predetermined shape to a resist film formed by applying photo resist on the first resistlayer 206 and removing unnecessary resist film after a development process. Thefirst layer 6 may be formed of Ni, NiCo, NiMn, etc. and may be formed not only by plating. When thefirst layer 6 is formed by a process other than the plating, thefirst seed layer 206 may not be formed. Hereinafter, all the seed layer will be formed by the similar process for forming thefirst seed layer 208, and all the resist layers are formed by the similar process for forming the first resistlayer 208. - Next, the
second layers 8 will be formed on the first layers 6. For example, thesecond layer 8 is formed as shown inFIG. 4 by plating Cu on the14A first layers 6 exposing from the first resistlayer 208. Thesecond layers 8 may be formed of Ni, Ni alloy, Au, Al, etc. and may be formed not only by plating. - Thereafter, a part of the second layer from one
end 8 a on thesacrificial layer 204 to a predetermined point on thesubstrate 2 is removed. For example, a second resist layer exposing the part of the second layer from oneend 8 a on thesacrificial layer 204 to a predetermined point on thesubstrate 2 is formed on thefirst layer 6 as shown inFIG. 5, and the14A second layer 8 exposing through the second resistlayer 210 is removed by etching or the like as shown inFIG. 6.14A - Then, the firs resist
layer 208 and the second resistlayer 210 are removed, and thefirst seed layer 206 exposing on thesacrificial layer 204 side through thefirst layers 6 by milling or the like as shown inFIG. 14A 7. In order to remove the firs resistlayer 208 and the second resistlayer 210, chemical such as N-Methyl-2-pyrrolidone, etc. Hereinafter, all the resist layers are removed the similar process as for removing the first resistlayer 208 and the second resistlayer 210. - Next, the surface layers 10 will be formed on the
first layers 6 and on the second layers 8. The thickness of thesurface layer 10 is preferably in a range from about 0.01 □m to about 10 □m. For example, the third resistlayer 212 is formed on a part of thesubstrate 2 and thesacrificial layer 204 where thefirst layers 6 are not formed as shown inFIG. 8, and the surface layers 10 are formed by plating Au on the15A first layers 6 and thesecond layer 8 exposing through the third resistlayer 212 as shown inFIG. 15A 9. Thereafter, the third resistlayer 212 is removed. The surface layers 10 may be formed of Au alloy, Pd, Rh, Ir, etc. and may be formed not only by plating. - Next, the
sacrificial layer 204 will be removed. For example, aprotection film 214 covering thesecond layers 8 is formed as shownFIG. 10, the15A sacrificial layer 204 is removed by wet-etching or the like as shown inFIG. 15A 11, and then theprotection film 214 is removed. Theprotection film 214 is a film for protecting thesecond layers 8 not to be removed together with thesacrificial layer 204 when thesacrificial layer 204 is removed. Therefore, theprotection film 214 is formed of material not to be removed with thesacrificial layer 204. When thesecond layer 8 and thesacrificial layer 204 are formed of the same material such as Cu, theprotection film 214 must be formed as described in the above; however, when thesecond layer 8 and thesacrificial layer 204 are formed of different materials that can be selectively removed, theprotection film 214 will be unnecessary. - Finally, the
substrate 2 and thefirst seed layer 206 are cut by dicing into chips (probe units) as shown inFIG. 12. Further, the15A substrate 2 and thefirst seed layer 206 may be cut by processes other than the dicing. -
FIG. 16 are schematic diagrams for explaining a manufacturing method according to a second embodiment of the method for manufacturing theprobe unit 1 according to the first embodiment of the probe unit of the present invention. The similar parts as in the first embodiment of the probe unit and the first embodiment of the method are marked with the same reference numbers as in the first embodiments and their explanation will be omitted. - First, a fourth resist
layer 216 exposing regions where thesecond layers 8 are formed is formed on the first layers 6 (FIG. 14A 3) as shown inFIG. 1. For example, the fourth resist16A layer 216 is formed from oneend 6 a above thesacrificial layer 204 to a predetermined position above thesubstrate 2 on the firs t layers 6. - Next, the
second layers 8 are formed by plating Cu on thefirst layers 6 exposing through the fourth resistlayer 216 as shown inFIG. 2.16A - Then, the first resist
layer 208 and the fourth resistlayer 216 are removed, and thefirst seed layer 206 exposing through thefirst layer 6 on thesacrificial layer 204 side as shown inFIG. 16A 3. Thereafter, the similar processes as in the above-described first embodiment of the method are executed as inFIG. 15 . - By the above-described first and second methods of the manufacturing the probe unit, each of the
first layers 6 of which oneend 6 a is positioned on thesacrificial layer 204 is formed on thesacrificial layer 204 and thesubstrate 2, and thesacrificial layer 204 is removed thereafter; therefore, each of the oneend 6 a of thefirst layer 6 is projecting to thehollow part 200 of thesubstrate 2. - Moreover, the part from the one
end 8 a of eachsecond layer 8 on thesacrificial layer 204 to the predetermined position on thesubstrate 2 is removed, or thesecond layers 8 are formed by masking areas of thefirst layers 6 from the one ends 6 a to the predetermined position on thesubstrate 2 with the fourth resistlayer 216; therefore, thesecond layer 8 is not formed at least on each oneend 6 a of thefirst layer 6, whereas thesecond layer 2 is formed on a part of eachfirs layer 6 from the predetermined position of thesubstrate 2 to the another end of thefirst layer 6. - Furthermore, the
surface layer 10 is formed on each of thefirst layers 6 and thesecond layers 8 exposing through the third resistlayer 212 formed on the region of thesubstrate 2 and thesacrificial layer 204 where thefirst layers 6 are not formed; therefore, thesurface layer 10 can be formed on each of thefirst layers 6 and thesecond layers 8 as in theprobe unit 1 according to the first embodiment of the probe unit of the present invention. -
FIG. 17 are schematic diagrams for explaining a manufacturing method according to a third embodiment of the method for manufacturing theprobe unit 121. The difference between the first and the third embodiments of the method is in the forming process of the surface layers 10. The similar parts as in the above-described embodiments are marked with the same reference numbers as in the embodiments and their explanation will be omitted. - First, the
seed layer 206, thefirst layers 6 and thesecond layers 8 are formed on thesubstrate 2, and the first resistlayer 208, etc. are removed as same as the above described first and the second embodiments of the method (refer toFIG. 14A 7 andFIG. 16A 3). - Next, the
sacrificial layer 204 is removed. For example, theprotection film 214 covering thesecond layers 8 is formed as shown inFIG. 1, and the17A sacrificial layer 204 is removed by the wet-etching or the like as shown inFIG. 2. Then the17A protection film 214 is removed as shown inFIG. 17A 3. - Next, the surface layers 10, each covering the surfaces of the
first layer 6 and thesecond layer 8, are formed as shown inFIG. 4. For example, Au is plated by turning on electricity to the region of the17A seed layer 206 where thefirst layers 6 are not formed. Thesurface layer 10 may be formed by other process than the plating. Further, the region turned on electricity can be not only on thefirst layer 6 but also on thesecond layer 8. - Finally, the
substrate 2, thefirst seed layer 206 and the surface layers 10 are cut by dicing into chips (probe units) as in the first embodiment of the method (refer toFIG. 17A 5). - By forming the surface layers 10 as described in the above, the
probe unit 121 according to the third embodiment of the probe unit having the surface layers 10 covering the surfaces of thefirst layers 6 and thesecond layers 8 can be manufactured. - A fourth and a fifth embodiments of the method for manufacturing the probe unit will be described. The difference between the first to the third embodiments of the method and the fourth and the fifth embodiments of the method is in the forming process of the surface layers 10. The similar parts as in the above-described embodiments are marked with the same reference numbers as in the embodiments and their explanation will be omitted.
-
FIG. 18 are schematic diagrams for explaining a manufacturing method according to the fourth embodiment of the method for manufacturing theprobe unit 131. - First, first surface layers 10 a are formed as shown in
FIG. 1 on the18A first layers 6 by the similar process as in the first embodiment of the method as shown inFIG. 14A 3. The first surface layers 10 a are formed by the same process and of the same material as in the surface layers 10. For example, the first surface layers 10 a are formed by plating Au on thefirst layers 6 exposing through the first resistlayer 208. - Next, the
second layers 8 are formed on the first surface layers 10 a. Then, second surface layers 10 b are formed on the second layers 8. The second surface layers 10 b are formed by the same process and of the same material as in the surface layers 10. - Then, the second resist
layer 210 is formed on the second surface layers 10 b by the similar process as in the first embodiment of the method, and parts of the second surface layers 10 b and the parts of thesecond layers 8 exposing through the second resistlayer 210 are removed by the etching or the like as shown inFIG. 18A 3. The processes after that are the same as in the above-described embodiments of the method (refer toFIG. 15 andFIG. 17 ). -
FIG. 19 are schematic diagrams for explaining a manufacturing method according to the fifth embodiment of the method for manufacturing theprobe unit 131. - First, first surface layers 10 a are formed as shown in
FIG. 1 on the19A first layers 6 by the similar process as in the first embodiment of the method as shown inFIG. 14A 3. For example, the first surface layers 10 a are formed on thefirst layers 6 exposing through the first resistlayer 208. - Next, the
second layers 8 are formed on the first surface layers 10 a. For example, the fourth resistlayer 216 is formed on the first surface layers 10 a as shown inFIG. 1 by the similar process as in the second embodiment of the method, and the19A second layers 8 are formed on the first surface layers 10 a exposing through the fourth resistlayer 216 as shown inFIG. 2.19A - Then, second surface layers 10 b are formed on the second layers 8. For example, the second surface layers 10 b are formed on the
second layers 8 exposing through the fourth resistlayer 216. - Next, the first resist
layer 208 and the fourth resistlayer 216 are removed, and thefirst seed layer 206 exposing from the firs layers 6 on thesacrificial layer 204 is removed as shown inFIG. 19A 3. The processes after that are the same as in the above-described embodiments of the method (refer toFIG. 15 andFIG. 17 ). -
FIG. 20 are schematic diagrams for explaining a manufacturing method according to a sixth embodiment of the method for manufacturing theprobe unit 171. The similar parts as in the above-described embodiments are marked with the same reference numbers as in the embodiments and their explanation will be omitted. - First, as same as the firs embodiment of the method, the
sacrificial layer 204 is formed on thesubstrate 2 as shown inFIG. 1.14A - Next, on the
substrate 2 and thesacrificial layer 204,thin layers 12, each of which is in a shape of long bar (or stick), are formed in a direction crossing a longitudinal direction of thehollow part 200 to position oneend 12 a of eachthin layer 12 on thesacrificial layer 204. For example, thefirs seed layer 206 is formed on thesubstrate 2 and thesacrificial layer 204, and a fifth resistlayer 218 exposing regions where thethin layers 12 will be formed is formed in a bar shape on thefirst seed layer 206 as shown inFIG. 1. Then the20A thin layers 12 are formed by plating NiFe on thefirst seed layer 206 exposing through the fifth resistlayer 218 as shown inFIG. 2. The thin layers 12 may be formed of Ni alloy such as NiCo, NiMn, etc. or Ni.20A - Next,
thick layers 14, each of which Is connected with each of thethin layers 12 at anotherend 12 b and having the same width as thethin layer 12, is formed in a shape of a bar. For example, a sixth resistlayer 220 exposing regions where thethick layers 14 will be formed is formed in a bar shape on thefirst seed layer 206 as shown inFIG. 20A 3. The sixth resistlayer 220 is burying thethin layers 12 in a condition that the surfaces of the another ends 12 are exposed. Then by plating Cu on thefirst seed layer 206 exposing through the sixth resistlayer 220, thethick layers 14 are formed as shown inFIG. 4. The thick layers 14 are preferably formed to be thicker than the thin layers 12. The material for the20A thick layers 14 is not limited to Cu. The material for thethick layers 14 may be NiFe as same as thethin layers 12, Ni alloy such as NiCo, NiMn, etc., or Ni, Au, Al, etc. Further, thethin layers 12 and thethick layers 14 can be formed by a process other than the plating. When they are formed by the process other than the plating, thefirst seed layer 206 may not be formed. - Next, the sixth resist
layer 220 is removed, and thefirst seed layer 206 exposing from thethin layers 12 on thesacrificial layer 204 side is removed by milling or the like as shown inFIG. 5. The processes after that are the same as in the above-described embodiments of the method (refer to20A FIG. 15 andFIG. 17 ). -
FIG. 21 are schematic diagrams for explaining a manufacturing method according to a seventh embodiment of the method for manufacturing theprobe unit 191. The difference from the sixth embodiment of the method is in the forming processes of thethin layers 12 and the thick layers 14. The similar parts as in the above-described embodiments are marked with the same reference numbers as in the embodiments and their explanation will be omitted. - First, as same as the firs embodiment of the method, the
sacrificial layer 204 is formed on thesubstrate 2 as shown inFIG. 1.14A - Next, on the
substrate 2,thick layers 14, each of which is in a shape of long bar (or stick), are formed in a direction crossing a longitudinal direction of thehollow part 200. For example, thefirs seed layer 206 is formed on thesubstrate 2 and thesacrificial layer 204, and a seventh resistlayer 222 exposing regions where thethick layers 14 will be formed is formed in a bar shape on thefirst seed layer 206 as shown inFIG. 1. Then the21A thick layers 14 are formed by plating Cu on thefirst seed layer 206 exposing through the seventh resistlayer 222 as shown inFIG. 2. Thereafter, the seventh resist21A layer 222 is removed. - Next, bar-shaped
thin layers 12, of which thicknesses are thinner than those of thethick layers 14 but widths are the same as those of thethick layers 14, are formed. Oneend 12 a of eachthin layer 12 is formed on thesacrificial layer 204, and anotherend 12 b of eachthin layer 12 is formed on a part of the oneedge 14 a of thethick layer 14. For example, an eighth resistlayer 224 exposing regions where thethin layers 12 are formed in a bar-shape and burying thethick layers 14 excepting parts of the one ends 14 a is formed as shown inFIG. 21A 3. Then thethin layers 12 are formed on thefirst seed layer 206 and thethick layers 14 exposing through the eighth resistlayer 224 as shown inFIG. 4.21A - Next, the eighth resist
layer 224 is removed, and thefirst seed layer 206 exposing from thethin layers 12 on thesacrificial layer 204 is removed by milling or the like as shown inFIG. 5. The processes after that are the same as in the above described embodiments of the method (refer to21A FIG. 15 andFIG. 17 ). - In the above-described sixth and the seventh embodiment of the method, the
thin layers 12 of which one ends 12 a are positioned on thesacrificial layer 204 are formed on thesubstrate 2 and thesacrificial layer 204, and thesacrificial layer 204 is removed, so that the one ends 12 a of thethin layers 12 are projecting to thehollow part 200 of thesubstrate 2. Moreover, the probe unit has thethin layers 12 and thethick layers 14; therefore, theprobe unit 171 or theprobe unit 191 having thethick layers 14 formed thicker than thethin layers 12 can be manufactured. - Although in the sixth embodiment of the method the sixth resist
layer 220 for burying thethin layers 12 is formed in that condition that the another ends 12 b of thethin layers 12 are exposed, the sixth resistlayer 220 exposing a part of the another ends of thethin layers 12 may be formed as shown inFIG. 2 . 22 so that theprobe unit 181 wherein the part of another ends of thethin layers 12 are buried in the one ends 14 a of thethick layers 14 can be formed. -
FIG. 23 are schematic diagrams for explaining a manufacturing method according to an eighth embodiment of the method for manufacturing theprobe unit 111. The similar parts as in the above-described embodiments are marked with the same reference numbers as in the embodiments and their explanation will be omitted. - First, as same as the firs embodiment of the method, the
first seed layer 206 is formed on thesubstrate 2, and the ninth resistlayer 228 exposing regions where thesecond layers 8 will be formed is formed In a bar shape on thefirst seed layer 206 as shown inFIG. 1. Then the23A second layers 8 are formed on thefirst seed layer 206 exposing through the ninth resistlayer 228 as shown inFIG. 2. Thereafter, the ninth resist23A layer 228 is removed. - Then the
first seed layer 206 exposing from thesecond layers 8 on thesacrificial layer 204 is removed as shown inFIG. 23A 3. - Next, a tenth resist
layer 230 burying thesecond layers 8 is formed, and the upper surfaces of thesecond layers 8 and the tenth resistlayers 230 are planarized by polishing or the like as shown inFIG. 4. The planarization of the upper surfaces of the23A second layers 8 and the tenth resistlayers 230 is not limited to the polishing. Further, if the upper surfaces of thesecond layers 8 and the tenth resistlayers 230 are formed to be enough planalized for the manufacturing processes, the polishing may be omitted. - Next, on the
second layers 8, thefirst layers 6, each of which is in a shape of long bar (or stick), are formed in a direction crossing a longitudinal direction of thehollow part 200. Thefirst layers 6 are formed to position their one ends 6 a are projecting from the one ends 8 a of thesecond layers 8 and on thesacrificial layer 204. For example, asecond seed layer 234 is formed on thesecond layers 8 and the tenth resistlayer 230 by the sputtering or the like, and an eleventh resist layer exposing the regions where thefirst layers 6 will be formed in a bar-shape is formed as shown inFIG. 5. Then, the23A first layers 6 are formed on thesecond seed layer 234 exposing through the eleventh resistlayer 236 as shown inFIG. 6. Thereafter, the eleventh resist23A layer 236 is removed. - Next, the
second seed layer 234 exposing through thefirst layers 6 are removed as shown inFIG. 23A 7, and then the tenth resistlayer 230 is removed as shown inFIG. 8. The processes after that are the same as in the above-described embodiments of the method (refer to23A FIG. 15 andFIG. 17 ). - In the above-described eighth embodiment of the method, the one ends 6 a of the
first layers 6 are formed above thehollow part 200 via thesacrificial layer 204 and the tenth resistlayer 230, and thesacrificial layer 204 and the tenth resistlayer 230 are removed thereafter; therefore, the firs layers 6 formed on thesecond layers 8 are projecting to thehollow part 200. That is, theprobe unit 111 can be manufactured. - The present invention has been described in connection with the preferred embodiments. The invention is not limited only to the above embodiments. It is apparent that various modifications, improvements, combinations, and the like can be made by those skilled In the art.
Claims (10)
1. A probe unit, comprising:
a substrate; and
a lead formed on the substrate and having a tip part projecting from an edge of the substrate and contacting to an electrode of a sample, and a thick part of which thickness is thicker than the tip part.
2. A probe unit according to claim 1 , wherein the lead further comprises a thin part having same thickness as the tip and formed between the tip and the thick part.
3. A probe unit according to claim 2 , wherein a boundary between the thin part and the thick part is positioned on the substrate.
4. A probe unit according to claim 2 , wherein a boundary between the thin part and the thick part is positioned on a point projecting from the substrate.
5. A probe unit according to claim 2 , wherein a step is formed between the thin part and the thick part on a surface of the lead that is opposite side of the substrate.
6. A probe unit according to claim 2 , wherein the lead comprises a first layer corresponding to the tip, the thin part and a lower layer of the thick part, and a second layer formed of a different material from the first layer and corresponding to an upper layer of the thick part.
7. A probe unit according to claim 2 , wherein
the thin part comprises a thin layer of which one end is positioned at a boundary of the thin part and the thick part, and
the thick part contacts with the one end of the thin part at the boundary and comprises a thick layer formed of different material from the thin layer.
8. A probe unit according to claim 1 , wherein the lead comprises a surface layer formed of different material from inside of the surface layer.
9. A method for manufacturing a probe unit, comprising the steps of:
(a) preparing a substrate;
(b) forming a hollow part in the substrate;
(c) forming a sacrificial layer that buries the hollow part on the substrate;
(d) forming a first layer of which one end is positioned on the sacrificial layer on the substrate and the sacrificial layer;
(e) forming a second layer on the first layer at least excepting the one end; and
(f) removing the sacrificial layer.
10. A method for manufacturing a probe unit, comprising the steps of:
(a) preparing a substrate;
(b) forming a hollow part in the substrate;
(c) forming a sacrificial layer that buries the hollow part on the substrate;
(d) forming a thin layer of which one end is positioned on the sacrificial layer;
(e) forming a thick layer of which one end is contacted with another end of the thin layer; and
(f) removing the sacrificial layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/970,704 US7559139B2 (en) | 2004-06-29 | 2008-01-08 | Method for manufacturing a probe unit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-190963 | 2004-06-29 | ||
JP2004190963A JP4382593B2 (en) | 2004-06-29 | 2004-06-29 | Probe unit and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/970,704 Division US7559139B2 (en) | 2004-06-29 | 2008-01-08 | Method for manufacturing a probe unit |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050285609A1 true US20050285609A1 (en) | 2005-12-29 |
Family
ID=35505000
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/168,319 Abandoned US20050285609A1 (en) | 2004-06-29 | 2005-06-29 | Probe unit and its manufacturing method |
US11/970,704 Active US7559139B2 (en) | 2004-06-29 | 2008-01-08 | Method for manufacturing a probe unit |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/970,704 Active US7559139B2 (en) | 2004-06-29 | 2008-01-08 | Method for manufacturing a probe unit |
Country Status (4)
Country | Link |
---|---|
US (2) | US20050285609A1 (en) |
JP (1) | JP4382593B2 (en) |
KR (2) | KR100715413B1 (en) |
TW (1) | TWI275804B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9168153B2 (en) | 2011-06-16 | 2015-10-27 | Smith & Nephew, Inc. | Surgical alignment using references |
US20150355235A1 (en) * | 2014-06-06 | 2015-12-10 | Mpi Corporation | Probe and method for manufacturing the probe |
CN107689379A (en) * | 2016-08-05 | 2018-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Scan probe and preparation method thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI332086B (en) * | 2006-10-24 | 2010-10-21 | Ind Tech Res Inst | Multi-layer electric probe and fabricating method |
JP5123533B2 (en) * | 2007-02-01 | 2013-01-23 | 株式会社日本マイクロニクス | Probe for energization test and manufacturing method thereof |
JP5414158B2 (en) * | 2007-06-13 | 2014-02-12 | 日本電子材料株式会社 | Contact probe manufacturing method |
TWI444625B (en) * | 2012-03-20 | 2014-07-11 | Mpi Corp | High frequency probe card |
JP6103821B2 (en) | 2012-05-29 | 2017-03-29 | 株式会社日本マイクロニクス | Probe for current test |
US10514391B2 (en) * | 2016-08-22 | 2019-12-24 | Kla-Tencor Corporation | Resistivity probe having movable needle bodies |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011261A (en) * | 1997-03-04 | 2000-01-04 | Canon Kabushiki Kaisha | Probe formed of mono-crystalline SI, the manufacturing method thereof, and an information processing device using the probe |
US6111418A (en) * | 1997-02-20 | 2000-08-29 | Soshotech Co., Ltd. | Method for building and a structure of a contact end in a contact probe |
US6245444B1 (en) * | 1997-10-02 | 2001-06-12 | New Jersey Institute Of Technology | Micromachined element and method of fabrication thereof |
US6466042B1 (en) * | 1995-12-02 | 2002-10-15 | Jae Woo Nam | Wafer type probe card with micro tips for testing integrated circuit chips |
US20030010615A1 (en) * | 2001-07-11 | 2003-01-16 | Xerox Corporation | Microspring with conductive coating deposited on tip after release |
US6788086B2 (en) * | 2002-03-29 | 2004-09-07 | Xerox Corporation | Scanning probe system with spring probe |
US6809539B2 (en) * | 2000-05-18 | 2004-10-26 | Advantest Corporation | Probe card for testing an integrated circuit |
US6827584B2 (en) * | 1999-12-28 | 2004-12-07 | Formfactor, Inc. | Interconnect for microelectronic structures with enhanced spring characteristics |
US7082684B2 (en) * | 2004-08-04 | 2006-08-01 | Palo Alto Research Center Incorporated | Intermetallic spring structure |
US7238031B2 (en) * | 2005-02-14 | 2007-07-03 | Alps Electric Co., Ltd. | Contact structure and manufacturing method thereof, and electronic member to which the contact structure is attached and manufacturing method thereof |
US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06342011A (en) * | 1993-06-01 | 1994-12-13 | Nitto Denko Corp | Probe structure and continuity inspection method |
JP2680556B2 (en) * | 1995-03-02 | 1997-11-19 | 株式会社双晶テック | Probe unit |
US6218203B1 (en) * | 1999-06-28 | 2001-04-17 | Advantest Corp. | Method of producing a contact structure |
JP2002286755A (en) | 2001-03-23 | 2002-10-03 | Yamaha Corp | Method of manufacturing for probe unit |
JP2002286758A (en) * | 2001-03-28 | 2002-10-03 | Yamaha Corp | Probe unit and its manufacturing method |
JP2003057266A (en) | 2001-08-20 | 2003-02-26 | Mitsubishi Materials Corp | Contact probe and manufacturing method therefor |
JP2003185676A (en) * | 2001-12-17 | 2003-07-03 | Yamaha Corp | Probe unit |
JP2004198352A (en) * | 2002-12-20 | 2004-07-15 | Yamaha Corp | Continuity test method, and probe unit used therefor |
-
2004
- 2004-06-29 JP JP2004190963A patent/JP4382593B2/en not_active Expired - Fee Related
-
2005
- 2005-06-28 KR KR1020050055998A patent/KR100715413B1/en not_active IP Right Cessation
- 2005-06-29 TW TW094121771A patent/TWI275804B/en not_active IP Right Cessation
- 2005-06-29 US US11/168,319 patent/US20050285609A1/en not_active Abandoned
-
2007
- 2007-03-02 KR KR1020070021011A patent/KR100747961B1/en not_active IP Right Cessation
-
2008
- 2008-01-08 US US11/970,704 patent/US7559139B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6466042B1 (en) * | 1995-12-02 | 2002-10-15 | Jae Woo Nam | Wafer type probe card with micro tips for testing integrated circuit chips |
US6111418A (en) * | 1997-02-20 | 2000-08-29 | Soshotech Co., Ltd. | Method for building and a structure of a contact end in a contact probe |
US6011261A (en) * | 1997-03-04 | 2000-01-04 | Canon Kabushiki Kaisha | Probe formed of mono-crystalline SI, the manufacturing method thereof, and an information processing device using the probe |
US6245444B1 (en) * | 1997-10-02 | 2001-06-12 | New Jersey Institute Of Technology | Micromachined element and method of fabrication thereof |
US6827584B2 (en) * | 1999-12-28 | 2004-12-07 | Formfactor, Inc. | Interconnect for microelectronic structures with enhanced spring characteristics |
US6809539B2 (en) * | 2000-05-18 | 2004-10-26 | Advantest Corporation | Probe card for testing an integrated circuit |
US7247035B2 (en) * | 2000-06-20 | 2007-07-24 | Nanonexus, Inc. | Enhanced stress metal spring contactor |
US20030010615A1 (en) * | 2001-07-11 | 2003-01-16 | Xerox Corporation | Microspring with conductive coating deposited on tip after release |
US6788086B2 (en) * | 2002-03-29 | 2004-09-07 | Xerox Corporation | Scanning probe system with spring probe |
US7082684B2 (en) * | 2004-08-04 | 2006-08-01 | Palo Alto Research Center Incorporated | Intermetallic spring structure |
US7238031B2 (en) * | 2005-02-14 | 2007-07-03 | Alps Electric Co., Ltd. | Contact structure and manufacturing method thereof, and electronic member to which the contact structure is attached and manufacturing method thereof |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9168153B2 (en) | 2011-06-16 | 2015-10-27 | Smith & Nephew, Inc. | Surgical alignment using references |
US20150355235A1 (en) * | 2014-06-06 | 2015-12-10 | Mpi Corporation | Probe and method for manufacturing the probe |
CN107689379A (en) * | 2016-08-05 | 2018-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Scan probe and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR100715413B1 (en) | 2007-05-07 |
JP2006010605A (en) | 2006-01-12 |
US7559139B2 (en) | 2009-07-14 |
TW200613742A (en) | 2006-05-01 |
KR100747961B1 (en) | 2007-08-08 |
TWI275804B (en) | 2007-03-11 |
JP4382593B2 (en) | 2009-12-16 |
KR20070037724A (en) | 2007-04-06 |
KR20060048573A (en) | 2006-05-18 |
US20080115354A1 (en) | 2008-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7559139B2 (en) | Method for manufacturing a probe unit | |
US7271015B2 (en) | Manufacturing method of semiconductor integrated circuit device and probe card | |
TWI645196B (en) | Electrical contactor | |
US7548082B2 (en) | Inspection probe | |
JP5046909B2 (en) | Contact for electrical test, electrical connection device using the contact, and method for manufacturing contact | |
DE112007001350T5 (en) | A method for producing a cantilever-type probe and method for producing a probe card using the same | |
JP5123508B2 (en) | Probe for current test and probe assembly for current test | |
JP5123533B2 (en) | Probe for energization test and manufacturing method thereof | |
KR101306654B1 (en) | probe module and method of manufacturing the same, and probe card having the probe module and method of manufacturing the same | |
US6660541B2 (en) | Semiconductor device and a manufacturing method thereof | |
US20070069749A1 (en) | Method for fabricating a plurality of elastic probes in a row | |
JP3936600B2 (en) | Contact probe and manufacturing method thereof | |
JP2003057266A (en) | Contact probe and manufacturing method therefor | |
US20080191727A1 (en) | Probe and probe assembly | |
JP5203136B2 (en) | Contact probe manufacturing method | |
KR101847064B1 (en) | Thin film resistor line manufacturing method of apparatus for inspecting electric condition, and thin film resistor line structure manufactured by the same method | |
JP2009300079A (en) | Contact probe and probe card | |
JP2007085877A (en) | Probe unit | |
JP2006090926A (en) | Probe unit, and producing method and inspecting method of probe unit | |
JP2000155131A (en) | Contact probe | |
JP2004045187A (en) | Contact probe and its manufacturing method | |
JP2005249527A (en) | Probe unit | |
JPH11174086A (en) | Contact probe and manufacture therefor | |
JP2004207412A (en) | Inspection device and manufacturing method for semiconductor device | |
JP2009216554A (en) | Manufacturing method of contact probe |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: YAMAHA CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SUGIURA, MASAHIRO;HIYAMA, KUNIO;OGINO, SUSUMU;REEL/FRAME:016742/0664;SIGNING DATES FROM 20040622 TO 20050621 |
|
AS | Assignment |
Owner name: YAMAICHI ELECTRONICS CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:YAMAHA CORPORATION;REEL/FRAME:017794/0721 Effective date: 20060602 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |