US20060054497A1 - Apparatus, method and system for monitoring chamber parameters associated with a deposition process - Google Patents
Apparatus, method and system for monitoring chamber parameters associated with a deposition process Download PDFInfo
- Publication number
- US20060054497A1 US20060054497A1 US11/264,235 US26423505A US2006054497A1 US 20060054497 A1 US20060054497 A1 US 20060054497A1 US 26423505 A US26423505 A US 26423505A US 2006054497 A1 US2006054497 A1 US 2006054497A1
- Authority
- US
- United States
- Prior art keywords
- energy beam
- sensor
- evaluation surface
- target
- target surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3482—Detecting or avoiding eroding through
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Definitions
- the present invention relates generally to sputter deposition of materials on substrate surfaces. More specifically, the present invention relates to methods and apparatus for measuring characteristics of a sputtering target and other surfaces within a sputtering vacuum chamber.
- FIG. 1 illustrates a cross-sectional schematic of a conventional sputtering apparatus 10 comprising a vacuum chamber 12 having inner chamber walls 13 , a gas inlet 14 and a gas outlet 16 .
- the vacuum chamber 12 may further include a window 15 comprising a material that is transparent to predetermined wavelengths of electromagnetic radiation.
- the sputtering apparatus 10 further comprises a substrate support pedestal 24 and a metallic target 22 attached to a sputtering cathode assembly 18 , each located within the vacuum chamber 12 .
- the pedestal 24 may be configured to secure a substrate 26 thereto with a biasable electrostatic chuck, a vacuum chuck, a clamping structure, or a combination of methods.
- the substrate 26 may be transported to and from the pedestal 24 manually or with a robotic arm or blade (not shown).
- the vacuum chamber 12 is filled with an inert gas, such as argon, through the gas inlet 14 and then reduced to a near vacuum through the gas outlet 16 .
- the target 22 is negatively charged to cause electrons to be emitted from an exposed surface 23 of the target 22 and move toward an anode (not shown). A portion of the moving electrons strike atoms of the inert gas, causing the atoms to become positively ionized and move towards the negatively charged target 22 .
- the electrons, inert gas atoms, and ions form a plasma which is typically intensified and confined over the target surface 23 by a magnetic field generated by a magnet assembly 20 located proximate the target 22 .
- the magnet assembly 20 may comprise one or more permanent magnets or electromagnets located behind and/or to the side of the target 22 .
- a portion of the ions discharging from the plasma strikes the target surface 23 at a high velocity, causing atoms or small particles of the target 22 material to be ejected from the target surface 23 .
- the ejected atoms or small particles then travel through the vacuum chamber 12 until they strike a surface, such as the surface of the substrate 26 , forming a thin metallic film thereon.
- Residue deposits comprising the ejected atoms or small particles and byproducts are also deposited on the inner chamber walls 13 and other surfaces within the sealed vacuum chamber 12 during the deposition process.
- the accumulation of the residue deposits on the inner chamber walls 13 may be a source of contamination as a plurality of substrates 26 is successively processed in the vacuum chamber 12 .
- the vacuum chamber 12 must be opened to atmosphere and cleaned after a predetermined amount of operation time has elapsed under vacuum or when contamination is detected on a substrate 26 that has undergone the deposition process. Opening and cleaning the vacuum chamber 12 is costly and time consuming. Therefore, it would be advantageous to clean the vacuum chamber 12 only when a predetermined amount of residue deposits have accumulated on the inner chamber walls 13 and other surfaces within the vacuum chamber 12 .
- the magnetic field formed over the target surface 23 by the magnet assembly 20 confines the electrons emitted from the target 22 to an area near the target surface 23 . This greatly increases the electron density and the likelihood of collisions between the electrons and the atoms of the inert gas in the space near the target surface 23 . Therefore, there is a higher rate of ion production in plasma regions near the target surface 23 where the magnetic field intensity is stronger. Varying rates of ion production in different plasma regions causes the target surface 23 to erode unevenly.
- the configuration of the magnet assembly 20 produces a radial variation of thick and thin areas, or grooves, within a diameter of the target surface 23 .
- FIG. 2 illustrates a cross-sectional perspective view of a typical erosion profile of a cylindrical metallic target 22 , such as the metallic target 22 shown in FIG. 1 , which has been used in a sputtering process.
- FIG. 2 illustrates a target surface 23 before erosion has occurred as well as an eroded target surface 32 that has eroded unevenly across the length of a diameter of the target 22 . Due to the geometry of a magnetic field surrounding the target 22 , the target surface 32 has eroded nearly symmetrically about a center line 30 dividing the length of the diameter.
- the target 22 may comprise a rare metal, such as gold, platinum, palladium or silver, or may comprise, for example, aluminum, titanium, tungsten or any other target material conventionally employed in the semiconductor industry. Therefore, it is advantageous to consume as much of the target 22 material during sputter deposition processes as possible before replacing an eroded target 22 . Further, replacing an eroded target 22 before the end of its useful life may be a difficult and time-consuming task. However, it is important to replace the target 22 before a groove “punches through” the target 22 material and exposes portions of the cathode assembly 18 to erosion, causing damage to the cathode assembly 18 and contaminating the sputtering apparatus 10 . For example, the target 22 material in the area of grooves 28 shown in FIG. 2 may erode before the remainder of the target 22 material and expose the cathode assembly 18 to ionic bombardment from the surrounding plasma.
- a rare metal such as gold, platinum, palladium or silver
- the sputtering target 22 may also be advantageous to replace or condition the sputtering target 22 when certain characteristics of the target surface 23 become degraded during the sputtering process. For example, the smoothness of the target surface 23 may degrade over time.
- the roughened target surface 23 may affect the consistency of the deposition formation on the substrate 26 and may also be an indication of the amount of target 22 consumption. Therefore, it may be advantageous to replace the target 22 when the target surface 23 reaches a predetermined roughness level.
- certain targets 22 such as targets 22 comprising Ag 2 Se (hereinafter “silver selenide”), may exhibit hair-like growths or asperities (not shown) during the sputtering process. A portion of the asperities may be ejected from the target surface 23 during the plasma ion bombardment and land on substrate 26 , forming defects therein. Typically, by the time the asperities have grown on the target surface 23 so as to create noticeable defects on the substrate 26 , the target 22 is no longer useful and must be replaced. Therefore, to avoid forming defects on the substrate 26 and to prolong the useful life of the target 22 , it may be advantageous to detect the asperities while the vacuum chamber 12 is under vacuum.
- the useful life of a metallic sputtering target 22 is typically estimated by determining the cumulative deposition time for the target 22 .
- a deposition time is chosen in an attempt to guarantee that the target 22 material will never be completely removed at any given location and may take into account the thickness of the target 22 , the material used for the target 22 , and the effect of intensifying and confining the plasma over the target surface 23 by a magnetic field generated by the magnet assembly 20 in a predetermined configuration.
- the erosion of the target surface 23 may be changed and could result in localized enhanced metal removal and the possible punching through of target 22 to the cathode assembly 18 before the expiration of the estimated deposition time.
- Directly measuring the characteristics of the target surface 23 or the vacuum chamber 12 is difficult and time consuming. Opening the vacuum chamber 12 to inspect the target surface 23 or inner chamber walls 13 requires several hours of idle time while the vacuum chamber 12 is baked out under post-vacuum inspection. Accurate measurement of the target surface 23 while the sputtering apparatus 10 is under vacuum is difficult because the gap distance d between the target 22 and the pedestal 24 may be as small as 25 millimeters. Typical measurement devices are too large to be inserted into the gap between the target 22 and the pedestal 24 to profile the target surface 23 while the vacuum chamber 12 is under vacuum. Further, measurement devices placed near the target 22 during a sputtering process may be damaged by exposure to metal deposition.
- the present invention in a number of embodiments, relates to methods and apparatus for measuring the characteristics of a metallic sputtering target and other surfaces within a sputtering chamber.
- An apparatus may comprise a sensor configured to emit a first energy beam toward a target surface and to detect a second energy beam emitted from the target surface.
- the sensor may be coupled to a thin profile arm configured to move or transport the sensor over the target surface between the target and a substrate support pedestal to a plurality of measurement locations.
- the arm may be configured to attach to a robotic device.
- the sensor and the arm are configured, positioned and sized to be inserted into a narrow gap existing between the target surface and the pedestal.
- the arm may also be configured to remove the sensor from the gap and to shield the sensor during a sputtering process.
- the senor may comprise a source element configured to emit a collimated light beam and at least one detector.
- the at least one detector is arranged as a linear array of detection elements and the source element is positioned so as to emit the collimated light beam at an acute angle with respect to the linear array.
- the linear array is positioned relative to the source element so as to be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target surface or the percentage of target erosion may be calculated by determining the location in the array of the detection element or elements illuminated by the reflection of the collimated light beam.
- the at least one detector may be configured, positioned and sized to collect a coherent reflection of the collimated light beam and a substantial portion of scattered light beams from the target surface.
- the roughness of the target surface may be calculated by comparing the coherent reflection and scattered light beams.
- the sensor may comprise a source configured to emit an energy beam substantially parallel to the target surface toward the at least one detector. The presence of asperities on the target surface may be detected by analyzing the energy beam after passing proximate to the target surface.
- An apparatus may comprise a sensor configured to emit a first energy beam toward a surface in a chamber and to detect a second energy beam emitted from the surface to analyze residue deposits thereon.
- the sensor may be coupled to a thin profile arm configured to move or transport the sensor proximate to the surface.
- the sensor may be positioned outside the chamber and configured to emit the energy beam through a window in the chamber.
- the sensor may be configured to perform a spectral analysis on the second energy beam.
- a sensor may comprise a transmitter optically coupled to a source collimator configured to collimate a light beam as it exits an optical fiber.
- the sensor may further comprise a receiver optically coupled to one or more collection collimators, each collection collimator being configured to collect a light beam incident thereon into a corresponding optical fiber.
- the present invention in additional embodiments, also encompasses a sputter deposition system incorporating the sensors of the present invention and methods of measuring surface characteristics.
- One method according to the present invention comprises emitting an energy beam, illuminating a first location on a target surface, detecting a reflection of the energy beam from the first location, and analyzing the detected reflection of the energy beam to determine a distance from the point of emission to the first location.
- Another method according to the present invention comprises detecting a coherently reflected portion of an energy beam from a target surface, detecting a scattered portion of the energy beam, and relating the coherently reflected portion and the scattered portion to a surface roughness.
- Yet another method according to the present invention comprises emitting an energy beam substantially parallel to a target surface, measuring a change to the energy beam, and relating the change to a presence of asperities on the target surface.
- a further method according to the present invention comprises performing a spectral analysis on an energy beam received from a surface.
- FIG. 1 is a cross-sectional side view schematic of a sputtering apparatus
- FIG. 2 is a cross-sectional perspective side view of an erosion profile of a cylindrical, metallic target
- FIGS. 3A-3C are cross-sectional side view schematics according to the present invention of a portion of a sputtering apparatus comprising a sensor configured, sized and positioned to be inserted between a target surface and a pedestal or near a vacuum chamber wall;
- FIG. 4 is a top view schematic of a sensor configured to measure the erosion of a sputtering target surface according to one embodiment of the present invention
- FIG. 5 is a side view schematic of the sensor of FIG. 4 and a portion of a sputtering apparatus
- FIG. 6 is a top view schematic of a sensor comprising a transceiver and detectors, the sensor configured to the roughness of a sputtering target surface according to another embodiment of the present invention
- FIG. 7 is a side view schematic of the transceiver of FIG. 6 and a roughened target surface
- FIG. 8 is a partial side view schematic of the sensor of FIG. 6 and the roughened target surface shown in FIG. 7 ;
- FIG. 9 is a top view schematic of a sensor configured to detect asperities on a sputtering target surface according to yet another embodiment of the present invention.
- FIG. 10 is a side view schematic of the sensor of FIG. 9 and a portion of a target surface having asperities;
- FIG. 11 is a block diagram of a sputter deposition system comprising a sensor assembly according to one embodiment of the present invention.
- FIGS. 12A-12C are block diagrams of sensor assemblies according to one embodiment of the present invention.
- FIG. 13 is a block diagram of a receiver suitable for use in the sensor assembly of FIG. 12C .
- FIGS. 3A-3C each illustrate a cross-sectional schematic according to the present invention of a portion of a sputtering apparatus, such as the sputtering apparatus 10 shown in FIG. 1 , wherein a sensor 50 is positioned relative to a surface of an inner chamber wall 13 , a surface of pedestal 24 or surface 23 of target 22 to be analyzed.
- a sensor 50 coupled to a thin profile arm 44 is configured and sized to be inserted into a gap between a target 22 and a pedestal 24 .
- the arm 44 may be configured to detachably attach to a chamber robot 40 configured to translate the sensor 50 over the target surface 23 , or at least a portion thereof.
- the chamber robot 40 may further be configured to protect the sensor 50 during the sputtering process by removing the sensor 50 from the sputtering area or by shielding the sensor 50 .
- the arm 44 may be interconnected to the chamber robot 40 through an articulating arm 42 configured to provide movement in at least one plane.
- the sensor 50 may detachably attach to a substrate pickup arm (not shown) connected to the chamber robot 40 and configured to transport a substrate (not shown) to and from the pedestal 24 using a pickup device (not shown), such as a clamp, vacuum chuck or electrostatic chuck, to attach the substrate thereto.
- the sensor 50 may be configured to attach directly to the pickup device.
- the sensor 50 is sized, positioned and configured to measure the characteristics of the target surface 23 by transmitting a signal 46 toward the target 22 and receiving a reflected or emitted signal 48 from the target surface 23 .
- the transmitted signal 46 may be an energy beam selected from the group comprising a visible light beam, an ultraviolet light beam, an infrared (hereinafter “IR”) light beam, a radio frequency (hereinafter “RF”) beam, a microwave beam and an ultrasound beam.
- IR infrared
- RF radio frequency
- the chamber robot 40 may be configured to position the sensor 50 at a plurality of locations relative to the target surface 23 .
- the sensor 50 may be configured, such as by using a multiplexor, to scan a portion (as opposed to a single point) on the target surface 23 while positioned at one location relative to the target surface 23 .
- the senor 50 may be sized, positioned and configured to measure the characteristics of the pedestal 24 by transmitting the signal 46 toward the pedestal 24 and receiving the reflected or emitted signal 48 from the pedestal 24 .
- the sensor 50 may be positioned and configured to measure the characteristics of the substrate 26 shown in FIG. 1 or deposits thereon.
- the sensor 50 may be configured to detect deposition defects on the substrate 26 or to detect when the deposition process is complete.
- the sensor 50 is sized, positioned and configured to measure the characteristics of an inner chamber wall 13 by transmitting the signal 46 toward the inner chamber wall 13 and receiving the reflected or emitted signal 48 from the inner chamber wall 13 .
- the sensor 50 may be sized, positioned and configured to measure the characteristics of any surface in the vacuum chamber 12 .
- the sensor 50 may be positioned outside the vacuum chamber 12 and configured to pass the transmitted signal 46 through the window 15 shown in FIG. 1 such that the transmitted signal 46 may reflect off one or more surfaces within the vacuum chamber 12 and exit the vacuum chamber 12 as reflected or emitted signal 48 through the same window 15 , or a different window (not shown).
- the surface characteristics measured by the sensor 50 shown in FIGS. 3A-3C may be obtained, for example, through spectroscopy techniques utilizing the absorption, emission, or scattering of electromagnetic radiation by atoms or molecules on the surface being analyzed to qualitatively or quantitatively study the atoms or molecules, or to analyze physical processes occurring on the surface.
- spectroscopy may be used to measure the amount and composition of residue deposits on the inner chamber wall 13 .
- the signal 46 transmitted toward the inner chamber wall 13 is an IR light beam and the absorption spectrum of the residue deposits on the inner chamber wall 13 is measured using IR absorption spectroscopy.
- IR absorption spectroscopy is the measurement of the wavelength and intensity of the absorption of the IR light by the inner chamber wall 13 and the residue deposits thereon.
- FTIR Fourier-transform infrared
- Raman spectroscopy is used to measure the amount and composition of residue deposits on the inner chamber wall 13 .
- the transmitted signal 46 illuminates the surface of the inner chamber wall 13
- a portion of the transmitted signal 46 is scattered in various directions.
- Light scattered due to vibrations in molecules or optical phonons in solids is Raman scattered light.
- the transmitted signal 46 strikes the inner chamber wall 13 or the residue deposits thereon, the light is scattered elastically (i.e., Rayleigh scattering) and inelastically (i.e., Raman scattering), generating Stokes and anti-Stokes lines.
- the reflected or emitted signal 48 represents a Raman scattered beam.
- Raman spectroscopy is the measurement of the wavelength and intensity of the inelastically scattered light of reflected or emitted signal 48 from the inner chamber wall 13 or the residue deposits thereon.
- the Raman scattered light of reflected or emitted signal 48 occurs at wavelengths that are shifted from the transmitted signal 46 by the energies of molecular vibrations.
- Raman spectroscopy may provide structure determination, multicomponent qualitative analysis, and quantitative analysis of the residue deposits on the inner chamber wall 13 .
- the mechanism of Raman scattering is different from that of IR absorption. Therefore, Raman spectroscopy and IR absorption spectroscopy may each be used to provide complementary information about the residue deposits on the inner chamber wall 13 .
- the reflected or emitted signal 48 may be analyzed to determine a relative distance between the sensor 50 and the target surface 23 . It may not be necessary to measure the relative distance between the sensor 50 and the target surface 23 at every point on the target surface 23 . Due to the radial symmetry of the erosion of the target surface 23 , it is only necessary to determine the relative distance between the sensor 50 and the target surface 23 at points located linearly between the center line 30 of the target surface 23 and an outside edge 25 of the target surface 23 , as shown in FIG. 2 . Thus, measuring the relative distance between the sensor 50 and the target surface 23 approximately every ten millimeters linearly between the center line 30 and an outside edge 25 may provide sufficient resolution to prevent punching through a target 22 having a diameter of approximately thirty centimeters.
- the relative distance between the sensor 50 and the target surface 23 is measured by measuring the time delay between the emission of the transmitted signal 46 and detection of the reflected or emitted signal 48 , multiplying the measured time delay by the speed of the transmitted signal 46 and dividing by two.
- the distance between the sensor 50 and the target surface 23 may be determined by indirectly establishing the time delay by measuring a phase difference between the transmitted signal 46 and the reflected or emitted signal 48 .
- the transmitted signal 46 may comprise a modulated signal.
- the transmitted signal 46 may be a pulsed signal and the reflected or emitted pulse signal 48 may be detected only during a predetermined time window such that increased time delay between transmission and detection causes less of the pulse to be detected.
- the detected power level of the reflected or emitted pulse signal 48 is inversely proportional to the distance traveled.
- Other embodiments for measuring the distance between the sensor 50 and the target surface 23 may also be employed.
- FIG. 4 illustrates a top view schematic of a sensor 52 according to one embodiment of the present invention.
- the sensor 52 is attached to a thin profile arm 44 , such as the arm 44 shown in FIG. 3A .
- Sensor 52 comprises a source element 54 and a detector array 55 .
- the source element 54 has a thin profile so as to fit between the target 22 and the pedestal 24 , as shown in FIG. 3A .
- the source element 54 is configured to generate a collimated light beam.
- the source element 54 may comprise a laser diode.
- the source element 54 may comprise a collimator, such as a lens, configured to collimate or focus light exiting an optical fiber to a desired beam diameter or spot size.
- the collimated light emitted from the source element 54 minimizes extraneous reflections and enhances signal detection.
- Use of a collimated light beam as an energy beam is currently preferred, although the invention is not so limited.
- the detector array 55 comprises a plurality of detectors or detector elements 56 (ten shown) disposed side by side in a linear array, each detector 56 having a thin profile so as to fit between the target 22 and the pedestal 24 , as shown in FIG. 3A .
- Each detector 56 in the detector array 55 is configured to produce an electronic sensory signal related to the magnitude of the radiation received thereon.
- each detector may comprise a photodiode or a charge coupled device (hereinafter “CCD”).
- CCD charge coupled device
- each detector 56 in the detector array 55 may comprise a collimator, such as a lens, configured to collect light into an optical fiber.
- FIG. 5 illustrates a side view schematic of the sensor 52 and arm 44 shown in FIG. 4 .
- the source element 54 is positioned so as to emit a transmitted beam 60 at a predetermined transmission angle ⁇ in relation to the arm 44 .
- ⁇ transmission angle
- FIG. 5 also illustrates the sensor 52 positioned in relation to a portion of a target 22 , such as the target 22 shown in FIG. 2 .
- the number of detectors 56 in the detector array 55 and the position of each detector 56 relative to the source element 54 are dependent upon the distance between the sensor 52 and the target 22 .
- three surfaces 23 , 32 , 70 are referenced in FIG. 5 corresponding to different target 22 erosion states.
- the first target surface 23 corresponds to a new or unused target 22 that has not yet been exposed to a sputtering process.
- the transmitted beam 60 illuminates the new target surface 23 and reflects back toward the detector array 55 as reflected beam 62 .
- the vertical distance z between the new target surface 23 and the sensor 52 may be predetermined.
- the incident angle ⁇ of the transmitted beam 60 and the reflected angle ⁇ ′ of the reflected beam 62 are equal
- the next target surface 32 shown in FIG. 5 corresponds to a target 22 that has been used in a sputtering process wherein approximately one-third of the target 22 material has been eroded.
- the target surface 32 has eroded unevenly.
- the transmitted beam 60 now represented by dashed line 64 , illuminates the eroded target surface 32 and reflects back toward the detector array 55 as reflected beam 66 .
- the reflected beam 66 illuminates a detector 56 in the detector array 55 located approximately one-third of the distance between the detector 56 located nearest the source element 54 and the detector 56 located farthest from the source element 54 . Therefore, it may be determined that approximately one-third of the target 22 material has been eroded at the measured location along the target surface 32 .
- the next target surface 70 shown in FIG. 5 corresponds to the interface between the target 22 and the cathode assembly 18 , as shown in FIG. 1 .
- the transmitted beam 60 now represented by dashed line 68 , illuminates the target interface surface 70 and reflects back toward the detector array 55 as reflected beam 72 .
- the reflected beam 72 illuminates a detector 56 in the detector array 55 located farthest from the source element 54 .
- it may be determined that substantially all of the target 22 material has been eroded at the measured location along the target interface surface 70 .
- use of the present invention to detect target consumption prevents the target interface surface 70 from being punched through and exposing portions of the cathode assembly 18 to erosion from the sputtering process. Therefore, it may be advantageous to replace the target 22 before the target interface surface 70 is detected.
- FIG. 6 illustrates a top view schematic of a sensor 80 according to another embodiment of the present invention.
- the sensor 80 is attached to a thin profile arm 44 , such as the arm 44 shown in FIG. 3A .
- the sensor 80 comprises a transceiver 82 and a two-dimensional detector matrix 86 comprising a plurality of detectors 84 ( 24 shown).
- the transceiver 82 and the detectors 84 each have a thin profile so as to fit between the target 22 and the pedestal 24 , as shown in FIG. 3A .
- the transceiver 82 is positioned in row 87 of the detector matrix 86 .
- Each detector 84 in the detector matrix 86 is configured to produce an electronic sensory signal related to the magnitude of the radiation received thereon.
- each detector 84 may comprise a photodiode or a CCD.
- each detector 84 may comprise a collimator, such as a lens, configured to collect light into an optical fiber.
- FIG. 7 illustrates a side view schematic of the transceiver 82 shown in FIG. 6 positioned in relation to a portion of a target surface 88 .
- the target surface 88 has roughened during a deposition process.
- the transceiver 82 comprises a source element 92 and a detector 94 .
- the transceiver 82 may also comprise a light-directing element 96 , such as a mirror.
- the source element 92 is configured to transmit a coherent light beam 97 of wavelength ⁇ toward the roughened target surface 88 .
- Use of a collimated coherent light beam as an energy beam is presently preferred, although the invention is not so limited.
- the source element 92 may comprise a laser diode.
- the source element may comprise a collimator, such as a lens, configured to collimate or focus coherent light exiting an optical fiber to a desired beam diameter or spot size.
- a first portion of the transmitted coherent light beam 97 is coherently reflected by the roughened target surface 88 in the specular direction back toward the transceiver 82 as reflected coherent beam 98 (offset for illustration only).
- the reflected coherent beam 98 is directed to the detector 94 by the light-directing element 96 where the power of the reflected coherent beam 98 is measured.
- the detector 94 may comprise a photodiode or a CCD.
- the detector 94 may comprise a collimator, such as a lens, configured to collect the coherent light into an optical fiber.
- FIG. 8 illustrates a side view schematic of the sensor 80 and arm 44 shown in FIG. 6 .
- FIG. 8 also illustrates the sensor 80 positioned in relation to a portion of the roughened target surface 88 .
- FIG. 8 shows a cross-sectional view of the sensor 80 along row 87 of the detector matrix 86 .
- the transceiver 82 is positioned and configured to illuminate a portion of the roughened target surface 88 with the transmitted coherent light beam 97 and to detect the reflected coherent beam 98 .
- a second portion of the transmitted coherent light beam 97 is reflected and scattered by the roughened target surface 88 in a three-dimensional cone-like direction back toward the detectors 84 in the detector matrix 86 as scattered light beams 90 (four beams shown).
- the dimensions of the detector matrix 86 are configured and positioned to detect a substantial portion of the scattered light beams 90 .
- the roughness of the target surface 88 may be expressed as a root-mean-square surface roughness (hereinafter “RMS_Roughness”) and may be determined as a function of the wavelength ⁇ of the transmitted coherent light beam 97 , the detected power of the reflected coherent beam 98 , and the detected power of the scattered light beams 90 .
- RMS_Roughness root-mean-square surface roughness
- P Coherent the detected coherent reflected beam 98 power
- P Scattered the detected scattered light 90 power
- the ratio of the RMS_Roughness divided by the wavelength ⁇ of the transmitted coherent light beam 97 is related to the scattering ratio in equation (2). If the target surface 88 is relatively smooth, P Coherent will be large compared to P Scattered . Thus, the scattering ratio will be relatively small and the ratio RMS_Roughness/ ⁇ will also be relatively small. As the target surface 88 becomes increasingly rough, P Scattered increases and P Coherent approaches zero. Thus, the scattering ratio becomes increasingly large and the ratio RMS_Roughness/ ⁇ will also become increasingly large. Thus, for a given wavelength ⁇ of the transmitted coherent light beam 97 , the RMS_Roughness may be characterized.
- FIG. 9 illustrates a top view schematic of a sensor 100 according to another embodiment of the present invention.
- the sensor 100 is attached to a thin profile arm 44 , such as the arm 44 shown in FIG. 3A .
- the sensor 100 comprises a source element 102 and a detector 104 .
- the source element 102 and the detector 104 each have a thin profile so as to fit between the target 22 and the pedestal 24 , as shown in FIG. 3A .
- the source element 102 is configured to generate an energy beam.
- the source element 102 may comprise a laser diode.
- the source element 102 may comprise a collimator configured to collimate or focus light exiting an optical fiber to a desired beam diameter or spot size.
- the detector 104 is configured to produce an electronic sensory signal related to the magnitude of the energy beam received thereon.
- the detector 104 may comprise a photodiode or a CCD.
- the detector 104 may comprise a collimator, such as a lens, configured to collect light into an optical fiber.
- FIG. 10 illustrates a side view schematic of the sensor 100 shown in FIG. 9 positioned in relation to a portion of a target surface 110 .
- the target surface 110 comprises a plurality of asperities 112 that have grown thereon during a deposition process.
- the target surface 110 may comprise silver selenide or any target material which manifests protrusion defects.
- the source element 102 is positioned and configured to emit an energy beam 114 substantially parallel to the target surface 110 toward the detector 104 .
- the sensor 100 is configured and positioned such that the energy beam 114 illuminates or otherwise interacts with a portion of the asperities 112 .
- the sensor 100 may be moved in a plane perpendicular to the target surface 110 as well as in a plane parallel to the target surface 110 .
- the presence of the asperities 112 on the target surface 110 is detected by an interruption of the energy beam 114 by a portion of the asperities 112 between the source element 102 and the detector 104 .
- the presence of the asperities 112 may be detected by a reduction in the intensity or power of the detected energy beam 114 caused by interactions with a portion of the asperities 112 .
- the presence of the asperities 112 may be detected by measuring the roughness of the target surface 110 as described above in relation to FIGS. 6-8 .
- FIG. 11 is a block diagram of a sputter deposition system 180 according to the present invention.
- the sputter deposition system 180 comprises a controller 182 electrically coupled to chamber circuitry 190 , a sensor assembly 200 , an input device 184 , an output device 186 and a data storage device 188 .
- the controller 182 is configured to communicate an electronic transmit signal to the sensor assembly 200 .
- the sensor assembly 200 Upon receipt of the transmit signal from the controller 182 , the sensor assembly 200 is configured to transmit a beam of energy.
- the sensor assembly 200 is configured to generate electronic sensory signals related to the magnitude of an emitted, reflected or scattered energy beam received thereon.
- the controller 182 is configured to receive and analyze the sensory signals.
- the sensor assembly 200 may be located substantially within the vacuum chamber 12 .
- the sensor assembly 200 may be located substantially outside of the vacuum chamber 12 or partially outside the vacuum chamber 12 .
- the sensor assembly 200 or a portion thereof, may be located outside of the vacuum chamber 12 and configured to transmit the energy beam through the window 15 .
- the sensor assembly 200 may be configured to receive the emitted, reflected or scattered energy beam as it exits the same window 15 or a different window (not shown).
- the controller 182 may be configured to interface with the chamber circuitry 190 , including chamber robot circuitry 192 , to control the position of the sensor assembly 200 or a portion thereof relative to a surface in the vacuum chamber 12 , the placement and removal of a substrate 26 on the pedestal 24 , sputter processing times, and other sputtering process and vacuum chamber 12 operations.
- the controller 182 may further be configured to perform computer functions such as executing software to perform desired calculations and tasks.
- the input device 184 may include, by way of example only, an Internet or other network connection, a mouse, a keypad or any device that allows an operator to enter data into the controller 182 .
- the output device 186 may include, by way of example only, a printer or a video display device.
- the data storage device 188 may include, by way of example only, drives that accept hard and floppy discs, tape cassettes, CD-ROM or DVD-ROM.
- the sensor assembly 200 may comprise a sensor (not shown) such as the sensors discussed above or the embodiments disclosed below in FIGS. 12A-13 .
- the sensor assembly 200 may comprise the sensor 52 attached to the arm 44 shown in FIGS. 4 and 5 .
- the controller 182 is configured to communicate an electronic transmit signal to the source element 54 .
- the source element 54 Upon receipt of the transmit signal from the controller 182 , the source element 54 is configured to transmit a beam of collimated light.
- the beam of collimated light may be a pulsed beam of collimated light.
- Each detector 56 is configured to generate an electronic sensory signal related to the magnitude of the radiation received thereon.
- the controller 182 is configured to receive and compare each of the sensory signals to determine which one of the detectors 56 was illuminated with the greatest magnitude of radiation.
- the controller 182 may be configured to receive the sensory signals during a predefined time window in relation to the communication of the transmit signal to the source element 54 .
- the controller 182 is further configured to determine the relative distance from the sensor 52 to a target surface 23 , 32 , 70 . As described above in relation to FIG. 5 , the controller 182 may be configured to estimate the relative amount of erosion at a location along the target surface 23 , 32 , 70 according to the relative position of the detector 56 in the detector array 55 illuminated with the greatest amount of radiation. For example, if a detector 56 located at the center of the detector array 55 is determined by the controller 182 to be illuminated by a reflected beam, then the controller 182 may be configured to estimate that half of the target 22 material has been eroded at the position along the target surface 23 , 32 , 70 being measured.
- FIGS. 12A-12C illustrate block diagrams of sensor assemblies 202 , 230 , and 260 , suitable for use as the sensor assembly 200 shown in FIG. 11 .
- the sensor assemblies 202 , 230 , 260 shown in FIGS. 12A-12C employ fiber optics to reduce the size of a portion of the sensor assemblies 202 , 230 , 260 to be positioned within a sealed chamber (not shown), such as the vacuum chamber 12 shown in FIG. 1 .
- FIG. 12A illustrates a block diagram of sensor assembly 202 according to one embodiment of the present invention.
- the sensor assembly 202 comprises a source element 210 and a plurality of reception elements 212 (four shown) attached to a thin profile arm 214 , such as the arm 44 shown in FIGS. 4 and 5 .
- the source element 210 comprises a collimator, such as a lens, configured to collimate or focus light exiting an optical fiber 216 to a desired beam diameter or spot size.
- Each reception element 212 comprises a collimator, such as a lens, configured to collect light incident thereon into an optical fiber assembly 218 .
- the sensor assembly 202 further comprises a transmitter 204 coupled to the source element 210 through the optical fiber 216 and a receiver 206 coupled to each of the plurality of reception elements 212 through the optical fiber assembly 218 .
- the optical fiber assembly 218 comprises a plurality of optical fibers, each optical fiber configured to couple to one reception element 212 .
- the transmitter 204 is configured to receive a transmit signal from the controller 182 and to transmit a beam of collimated light to the source element 210 through the optical fiber 216 .
- the beam of collimated light may be a pulsed beam of collimated light.
- the receiver 206 is configured to receive a light beam through the optical fiber assembly 218 and to generate an electronic sensory signal related to the magnitude of the radiation collected at the respective reception element 212 .
- the receiver 206 is further configured to transmit each of the sensory signals to the controller 182 .
- the controller 182 is configured to receive and compare each of the sensory signals to determine which one of the reception elements 212 was illuminated with the greatest magnitude of radiation.
- the controller 182 may be configured to receive the sensory signals during a predefined time window in relation to the communication of the transmit signal to the source element 210 from the transmitter 204 .
- the controller 182 is further configured to determine the relative distance from the source element 210 to an object (not shown), as described above.
- FIG. 12B illustrates a block diagram of sensor assembly 230 according to another embodiment of the present invention.
- the sensor assembly 230 comprises an imaging device 236 , a transceiver 238 and a scattered light reception element 240 attached to a thin profile arm 242 .
- the imaging device 236 may comprise a lens.
- the transceiver 238 is configured to emit a coherent light beam 250 and to receive a reflected coherent light beam 251 (offset for illustration only).
- the transceiver 238 comprises a source collimator (not shown), such as a lens, configured to collimate or focus the coherent light beam 250 exiting an optical fiber 244 to a desired beam diameter or spot size.
- the transceiver 238 also comprises a coherent light reception element (not shown).
- the transceiver 238 may also comprise a light-directing element (not shown), such as a mirror, configured to direct the coherent light beam 250 from the source collimator out of the transceiver 238 and/or to direct the reflected coherent light beam 251 into the transceiver 238 to the coherent light reception element.
- the coherent light reception element in the transceiver 238 and the scattered light reception element 240 each comprise a collimator, such as a lens, configured to collect light incident thereon into an optical fiber assembly 246 .
- the sensor assembly 230 further comprises a transmitter 232 coupled to the transceiver 238 through the optical fiber 244 and a receiver 234 coupled to the transceiver 238 and to the scattered light reception element 240 through the optical fiber assembly 246 .
- the transmitter 232 is configured to receive a transmit signal from the controller 182 and to transmit the coherent light beam 250 to the transceiver 238 through the optical fiber 244 where the source collimator emits the coherent light beam 250 through the imaging device 236 .
- the imaging device 236 is configured to direct the reflected coherent light beam 251 to the transceiver 238 where it is passed to the receiver 234 through the optical fiber assembly 246 .
- the imaging device 236 is further configured to direct scattered light beams 252 (two shown) to the scattered light reception element 240 where they are passed to the receiver 234 through the optical fiber assembly 246 .
- the receiver 234 is configured to generate an electronic sensory signal in response to each of the received reflected coherent light beam 251 and scattered light beams 252 .
- the receiver 234 is further configured to transmit each of the sensory signals to the controller 182 .
- the controller 182 is configured to receive and analyze the sensory signals as described above in relation to FIGS. 6-8 to determine the roughness of a surface (not shown) illuminated by the coherent light beam 250 .
- FIG. 12C illustrates a block diagram of sensor assembly 260 according to yet another embodiment of the present invention.
- the sensor assembly 260 comprises a source element 266 and a reception element 268 attached to a thin profile arm 270 .
- the source element 266 comprises a collimator, such as a lens, configured to collimate or focus light exiting an optical fiber 272 to a desired beam diameter or spot size.
- the reception element 268 also comprises a collimator, such as a lens, configured to collect emitted, reflected or scattered light incident thereon into an optical fiber 274 .
- the sensor assembly 260 further comprises a transmitter 262 coupled to the source element 266 through the optical fiber 272 and a spectrometer 264 coupled to the reception element 268 through the optical fiber 274 .
- the transmitter 262 is configured to receive a transmit signal from the controller 182 and to transmit a beam of collimated light to the source element 266 through the optical fiber 272 .
- the beam of collimated light may comprise multiple wavelengths.
- the spectrometer 264 is configured to receive the collected light incident upon the reception element 268 through the optical fiber 274 and to analyze the collected light using spectroscopy techniques.
- the spectrometer 264 is further configured to generate electronic sensory signals related to the spectroscopic analysis and to transmit the sensory signals to the controller 182 .
- the controller 182 is configured to receive the sensory signals and to correlate the sensory signals to spectra previously stored in a database in the data storage device 188 .
- the sensory signals may be correlated to compositional data to determine elemental, isotropic and structural characteristics of a surface (not shown) illuminated by the transmitted beam of collimated light. For example, as discussed above, the sensory signals may be correlated to determine the amount and composition of residue deposits on the inner chamber wall 13 shown in FIG. 3C .
- the spectrometer 264 shown in FIG. 12C employs a Michelson interferometer.
- the spectrometer 264 comprises a beam splitter 280 , a moving mirror 282 , a fixed mirror 284 and a receiver 286 .
- the spectrometer 264 may be used with Fourier-transform techniques to perform FTIR spectroscopy on the collected light incident upon the reception element 268 .
- the collimated light beam transmitted by source element 266 is an IR light beam and that the collected light incident upon the reception element 268 is a reflection of the IR light beam from a surface, such as the inner chamber wall 13 shown in FIG. 3C .
- the reflected IR light beam exiting the optical fiber 274 is directed onto the beam splitter 280 .
- the beam splitter 280 directs approximately half of the reflected IR light beam to the moving mirror 282 and approximately half of the reflected IR light beam to the fixed mirror 284 . After reflecting off the moving mirror 282 and the fixed mirror 284 , the components of the reflected IR light beam are recombined by the beam splitter 280 and directed to the receiver 286 .
- the moving mirror 282 and the fixed mirror 284 produce constructive and destructive interference in the recombined IR light beam which is detected by the receiver 286 .
- the receiver 286 is configured to convert the detected interference into sensory signals, which are then analyzed by the controller 182 in FIG. 11 to determine the concentration and composition of the surface being analyzed.
- the spectrometer 264 may be used to perform Raman spectroscopy on the collected light incident upon the reception element 268 .
- the collimated light beam transmitted by source element 266 comprises multiple wavelengths and that the collected light incident upon the reception element 268 is Raman scattered light from a surface illuminated with the collimated light beam, such as the inner chamber wall 13 shown in FIG. 3C .
- the Raman scattered light is processed by the spectrometer 264 as described above. However, the Raman scattered light undergoes additional Raman spectroscopy once it reaches the receiver 286 .
- FIG. 13 illustrates a receiver 300 , such as the receiver 286 shown in FIG. 12C , configured to perform Raman spectroscopy.
- the receiver 300 comprises a first lens 306 , a grating 308 , a second lens 310 , and a detector 312 .
- the Raman scattered light is directed onto the grating 308 by the first lens 306 .
- the grating 308 disperses the Raman scattered light through the second lens 310 where it is focused onto the detector 312 .
- the detector 312 may be selected from the group comprising a CCD camera, an intensified CCD detector, a charge injection device, a photomultiplier tube detector array, a photodiode array (hereinafter “PDA”), an intensified PDA, or an avalanche photodiode array.
- the detector 312 is configured to generate sensory signals representative of the Raman spectra received thereon.
- the sensory signals are then analyzed by the controller 182 in FIG. 11 and compared to Raman spectra previously stored in a database in the data storage device 188 .
- structural analysis, multicomponent qualitative analysis, and quantitative analysis may be performed to determine the characteristics of the surface being analyzed.
Abstract
Apparatus and methods for measuring characteristics of a metallic target as well as other interior surfaces of a sputtering chamber. The apparatus includes a sensor configured to emit an energy beam toward a surface of interest and to detect an energy beam therefrom, the detected energy beam being indicative of parameters of a characteristic of interest of the surface of interest. Quantitative and qualitative characteristics of interest may be determined. A sputtering system including the apparatus and operable according to the methods of the invention is also disclosed.
Description
- This application is a continuation of application Ser. No. 10/609,297, filed Jun. 27, 2003, pending, which is a continuation-in-part of U.S. patent application Ser. No. 10/352,699, entitled “Device for Measuring the Profile of a Metal Film Sputter Deposition Target, and System and Method Employing Same,” filed Jan. 27, 2003, now U.S. Pat. No. 6,811,657, issued Nov. 2, 2004, the disclosure of which is incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates generally to sputter deposition of materials on substrate surfaces. More specifically, the present invention relates to methods and apparatus for measuring characteristics of a sputtering target and other surfaces within a sputtering vacuum chamber.
- 2. State of the Art
- A thin film of metallic material may be deposited on a substrate using a sputter deposition process wherein a metallic target is attacked with ions, causing atoms or small particles of the target to be ejected from the target and deposited on the substrate surface.
FIG. 1 illustrates a cross-sectional schematic of aconventional sputtering apparatus 10 comprising avacuum chamber 12 havinginner chamber walls 13, agas inlet 14 and agas outlet 16. Thevacuum chamber 12 may further include awindow 15 comprising a material that is transparent to predetermined wavelengths of electromagnetic radiation. The sputteringapparatus 10 further comprises asubstrate support pedestal 24 and ametallic target 22 attached to a sputteringcathode assembly 18, each located within thevacuum chamber 12. Thepedestal 24 may be configured to secure asubstrate 26 thereto with a biasable electrostatic chuck, a vacuum chuck, a clamping structure, or a combination of methods. Thesubstrate 26 may be transported to and from thepedestal 24 manually or with a robotic arm or blade (not shown). - During the sputtering process, the
vacuum chamber 12 is filled with an inert gas, such as argon, through thegas inlet 14 and then reduced to a near vacuum through thegas outlet 16. Thetarget 22 is negatively charged to cause electrons to be emitted from an exposedsurface 23 of thetarget 22 and move toward an anode (not shown). A portion of the moving electrons strike atoms of the inert gas, causing the atoms to become positively ionized and move towards the negativelycharged target 22. The electrons, inert gas atoms, and ions form a plasma which is typically intensified and confined over thetarget surface 23 by a magnetic field generated by amagnet assembly 20 located proximate thetarget 22. Themagnet assembly 20 may comprise one or more permanent magnets or electromagnets located behind and/or to the side of thetarget 22. A portion of the ions discharging from the plasma strikes thetarget surface 23 at a high velocity, causing atoms or small particles of thetarget 22 material to be ejected from thetarget surface 23. The ejected atoms or small particles then travel through thevacuum chamber 12 until they strike a surface, such as the surface of thesubstrate 26, forming a thin metallic film thereon. - Residue deposits comprising the ejected atoms or small particles and byproducts are also deposited on the
inner chamber walls 13 and other surfaces within the sealedvacuum chamber 12 during the deposition process. The accumulation of the residue deposits on theinner chamber walls 13 may be a source of contamination as a plurality ofsubstrates 26 is successively processed in thevacuum chamber 12. Thus, thevacuum chamber 12 must be opened to atmosphere and cleaned after a predetermined amount of operation time has elapsed under vacuum or when contamination is detected on asubstrate 26 that has undergone the deposition process. Opening and cleaning thevacuum chamber 12 is costly and time consuming. Therefore, it would be advantageous to clean thevacuum chamber 12 only when a predetermined amount of residue deposits have accumulated on theinner chamber walls 13 and other surfaces within thevacuum chamber 12. - The magnetic field formed over the
target surface 23 by themagnet assembly 20 confines the electrons emitted from thetarget 22 to an area near thetarget surface 23. This greatly increases the electron density and the likelihood of collisions between the electrons and the atoms of the inert gas in the space near thetarget surface 23. Therefore, there is a higher rate of ion production in plasma regions near thetarget surface 23 where the magnetic field intensity is stronger. Varying rates of ion production in different plasma regions causes thetarget surface 23 to erode unevenly. Typically, the configuration of themagnet assembly 20 produces a radial variation of thick and thin areas, or grooves, within a diameter of thetarget surface 23.FIG. 2 illustrates a cross-sectional perspective view of a typical erosion profile of a cylindricalmetallic target 22, such as themetallic target 22 shown inFIG. 1 , which has been used in a sputtering process.FIG. 2 illustrates atarget surface 23 before erosion has occurred as well as aneroded target surface 32 that has eroded unevenly across the length of a diameter of thetarget 22. Due to the geometry of a magnetic field surrounding thetarget 22, thetarget surface 32 has eroded nearly symmetrically about acenter line 30 dividing the length of the diameter. - Referring now to
FIGS. 1 and 2 , thetarget 22 may comprise a rare metal, such as gold, platinum, palladium or silver, or may comprise, for example, aluminum, titanium, tungsten or any other target material conventionally employed in the semiconductor industry. Therefore, it is advantageous to consume as much of thetarget 22 material during sputter deposition processes as possible before replacing aneroded target 22. Further, replacing aneroded target 22 before the end of its useful life may be a difficult and time-consuming task. However, it is important to replace thetarget 22 before a groove “punches through” thetarget 22 material and exposes portions of thecathode assembly 18 to erosion, causing damage to thecathode assembly 18 and contaminating thesputtering apparatus 10. For example, thetarget 22 material in the area ofgrooves 28 shown inFIG. 2 may erode before the remainder of thetarget 22 material and expose thecathode assembly 18 to ionic bombardment from the surrounding plasma. - It may also be advantageous to replace or condition the sputtering
target 22 when certain characteristics of thetarget surface 23 become degraded during the sputtering process. For example, the smoothness of thetarget surface 23 may degrade over time. The roughenedtarget surface 23 may affect the consistency of the deposition formation on thesubstrate 26 and may also be an indication of the amount oftarget 22 consumption. Therefore, it may be advantageous to replace thetarget 22 when thetarget surface 23 reaches a predetermined roughness level. - As another example of
degraded target surface 23 characteristics,certain targets 22, such astargets 22 comprising Ag2Se (hereinafter “silver selenide”), may exhibit hair-like growths or asperities (not shown) during the sputtering process. A portion of the asperities may be ejected from thetarget surface 23 during the plasma ion bombardment and land onsubstrate 26, forming defects therein. Typically, by the time the asperities have grown on thetarget surface 23 so as to create noticeable defects on thesubstrate 26, thetarget 22 is no longer useful and must be replaced. Therefore, to avoid forming defects on thesubstrate 26 and to prolong the useful life of thetarget 22, it may be advantageous to detect the asperities while thevacuum chamber 12 is under vacuum. - The useful life of a
metallic sputtering target 22 is typically estimated by determining the cumulative deposition time for thetarget 22. A deposition time is chosen in an attempt to guarantee that thetarget 22 material will never be completely removed at any given location and may take into account the thickness of thetarget 22, the material used for thetarget 22, and the effect of intensifying and confining the plasma over thetarget surface 23 by a magnetic field generated by themagnet assembly 20 in a predetermined configuration. However, if the characteristics of the plasma distribution change due, for example, to reconfiguring themagnet assembly 20 to produce a magnetic field with a different geometry, the erosion of thetarget surface 23 may be changed and could result in localized enhanced metal removal and the possible punching through oftarget 22 to thecathode assembly 18 before the expiration of the estimated deposition time. - Directly measuring the characteristics of the
target surface 23 or thevacuum chamber 12 is difficult and time consuming. Opening thevacuum chamber 12 to inspect thetarget surface 23 orinner chamber walls 13 requires several hours of idle time while thevacuum chamber 12 is baked out under post-vacuum inspection. Accurate measurement of thetarget surface 23 while thesputtering apparatus 10 is under vacuum is difficult because the gap distance d between thetarget 22 and thepedestal 24 may be as small as 25 millimeters. Typical measurement devices are too large to be inserted into the gap between thetarget 22 and thepedestal 24 to profile thetarget surface 23 while thevacuum chamber 12 is under vacuum. Further, measurement devices placed near thetarget 22 during a sputtering process may be damaged by exposure to metal deposition. - In view of the above-noted shortcomings in the art, it would be advantageous to prevent contamination from residue deposits on the
inner chamber walls 13 and other surfaces and to prevent premature replacement, over-consumption or degradation of thetarget 22 by providing a technique and device to measure theinner chamber walls 13 and thetarget surface 23 while thevacuum chamber 12 is under vacuum. - The present invention, in a number of embodiments, relates to methods and apparatus for measuring the characteristics of a metallic sputtering target and other surfaces within a sputtering chamber.
- An apparatus according to one embodiment of the present invention may comprise a sensor configured to emit a first energy beam toward a target surface and to detect a second energy beam emitted from the target surface. The sensor may be coupled to a thin profile arm configured to move or transport the sensor over the target surface between the target and a substrate support pedestal to a plurality of measurement locations. The arm may be configured to attach to a robotic device. The sensor and the arm are configured, positioned and sized to be inserted into a narrow gap existing between the target surface and the pedestal. The arm may also be configured to remove the sensor from the gap and to shield the sensor during a sputtering process.
- In another embodiment of the present invention, the sensor may comprise a source element configured to emit a collimated light beam and at least one detector. According to one aspect of the invention, the at least one detector is arranged as a linear array of detection elements and the source element is positioned so as to emit the collimated light beam at an acute angle with respect to the linear array. The linear array is positioned relative to the source element so as to be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target surface or the percentage of target erosion may be calculated by determining the location in the array of the detection element or elements illuminated by the reflection of the collimated light beam. According to another aspect of the invention, the at least one detector may be configured, positioned and sized to collect a coherent reflection of the collimated light beam and a substantial portion of scattered light beams from the target surface. The roughness of the target surface may be calculated by comparing the coherent reflection and scattered light beams. According to a further aspect of the invention, the sensor may comprise a source configured to emit an energy beam substantially parallel to the target surface toward the at least one detector. The presence of asperities on the target surface may be detected by analyzing the energy beam after passing proximate to the target surface.
- An apparatus according to yet another embodiment of the present invention may comprise a sensor configured to emit a first energy beam toward a surface in a chamber and to detect a second energy beam emitted from the surface to analyze residue deposits thereon. The sensor may be coupled to a thin profile arm configured to move or transport the sensor proximate to the surface. Alternatively, the sensor may be positioned outside the chamber and configured to emit the energy beam through a window in the chamber. The sensor may be configured to perform a spectral analysis on the second energy beam.
- In yet another embodiment of the present invention, a sensor may comprise a transmitter optically coupled to a source collimator configured to collimate a light beam as it exits an optical fiber. The sensor may further comprise a receiver optically coupled to one or more collection collimators, each collection collimator being configured to collect a light beam incident thereon into a corresponding optical fiber.
- The present invention, in additional embodiments, also encompasses a sputter deposition system incorporating the sensors of the present invention and methods of measuring surface characteristics.
- One method according to the present invention comprises emitting an energy beam, illuminating a first location on a target surface, detecting a reflection of the energy beam from the first location, and analyzing the detected reflection of the energy beam to determine a distance from the point of emission to the first location. Another method according to the present invention comprises detecting a coherently reflected portion of an energy beam from a target surface, detecting a scattered portion of the energy beam, and relating the coherently reflected portion and the scattered portion to a surface roughness. Yet another method according to the present invention comprises emitting an energy beam substantially parallel to a target surface, measuring a change to the energy beam, and relating the change to a presence of asperities on the target surface. A further method according to the present invention comprises performing a spectral analysis on an energy beam received from a surface.
- Other features and advantages of the present invention will become apparent to those of ordinary skill in the art through consideration of the ensuing description, the accompanying drawings, and the appended claims.
- In the drawings, which illustrate what are currently considered to be best modes for carrying out the invention:
-
FIG. 1 is a cross-sectional side view schematic of a sputtering apparatus; -
FIG. 2 is a cross-sectional perspective side view of an erosion profile of a cylindrical, metallic target; -
FIGS. 3A-3C are cross-sectional side view schematics according to the present invention of a portion of a sputtering apparatus comprising a sensor configured, sized and positioned to be inserted between a target surface and a pedestal or near a vacuum chamber wall; -
FIG. 4 is a top view schematic of a sensor configured to measure the erosion of a sputtering target surface according to one embodiment of the present invention; -
FIG. 5 is a side view schematic of the sensor ofFIG. 4 and a portion of a sputtering apparatus; -
FIG. 6 is a top view schematic of a sensor comprising a transceiver and detectors, the sensor configured to the roughness of a sputtering target surface according to another embodiment of the present invention; -
FIG. 7 is a side view schematic of the transceiver ofFIG. 6 and a roughened target surface; -
FIG. 8 is a partial side view schematic of the sensor ofFIG. 6 and the roughened target surface shown inFIG. 7 ; -
FIG. 9 is a top view schematic of a sensor configured to detect asperities on a sputtering target surface according to yet another embodiment of the present invention; -
FIG. 10 is a side view schematic of the sensor ofFIG. 9 and a portion of a target surface having asperities; -
FIG. 11 is a block diagram of a sputter deposition system comprising a sensor assembly according to one embodiment of the present invention; -
FIGS. 12A-12C are block diagrams of sensor assemblies according to one embodiment of the present invention; and -
FIG. 13 is a block diagram of a receiver suitable for use in the sensor assembly ofFIG. 12C . -
FIGS. 3A-3C each illustrate a cross-sectional schematic according to the present invention of a portion of a sputtering apparatus, such as thesputtering apparatus 10 shown inFIG. 1 , wherein asensor 50 is positioned relative to a surface of aninner chamber wall 13, a surface ofpedestal 24 orsurface 23 oftarget 22 to be analyzed. As shown inFIG. 3A , asensor 50 coupled to athin profile arm 44 is configured and sized to be inserted into a gap between atarget 22 and apedestal 24. Thearm 44 may be configured to detachably attach to achamber robot 40 configured to translate thesensor 50 over thetarget surface 23, or at least a portion thereof. Thechamber robot 40 may further be configured to protect thesensor 50 during the sputtering process by removing thesensor 50 from the sputtering area or by shielding thesensor 50. Thearm 44 may be interconnected to thechamber robot 40 through an articulatingarm 42 configured to provide movement in at least one plane. In another embodiment of the present invention, thesensor 50 may detachably attach to a substrate pickup arm (not shown) connected to thechamber robot 40 and configured to transport a substrate (not shown) to and from thepedestal 24 using a pickup device (not shown), such as a clamp, vacuum chuck or electrostatic chuck, to attach the substrate thereto. In yet another embodiment, thesensor 50 may be configured to attach directly to the pickup device. - As shown in
FIG. 3A , thesensor 50 is sized, positioned and configured to measure the characteristics of thetarget surface 23 by transmitting asignal 46 toward thetarget 22 and receiving a reflected or emittedsignal 48 from thetarget surface 23. The transmittedsignal 46 may be an energy beam selected from the group comprising a visible light beam, an ultraviolet light beam, an infrared (hereinafter “IR”) light beam, a radio frequency (hereinafter “RF”) beam, a microwave beam and an ultrasound beam. To profile thetarget surface 23, thechamber robot 40 may be configured to position thesensor 50 at a plurality of locations relative to thetarget surface 23. Further, thesensor 50 may be configured, such as by using a multiplexor, to scan a portion (as opposed to a single point) on thetarget surface 23 while positioned at one location relative to thetarget surface 23. - As shown in
FIG. 3B , thesensor 50 may be sized, positioned and configured to measure the characteristics of thepedestal 24 by transmitting thesignal 46 toward thepedestal 24 and receiving the reflected or emittedsignal 48 from thepedestal 24. Alternatively, although not shown inFIG. 3B , thesensor 50 may be positioned and configured to measure the characteristics of thesubstrate 26 shown inFIG. 1 or deposits thereon. For example thesensor 50 may be configured to detect deposition defects on thesubstrate 26 or to detect when the deposition process is complete. - As shown in
FIG. 3C , thesensor 50 is sized, positioned and configured to measure the characteristics of aninner chamber wall 13 by transmitting thesignal 46 toward theinner chamber wall 13 and receiving the reflected or emittedsignal 48 from theinner chamber wall 13. Similarly, thesensor 50 may be sized, positioned and configured to measure the characteristics of any surface in thevacuum chamber 12. Alternatively, although not shown inFIGS. 3A-3C , thesensor 50 may be positioned outside thevacuum chamber 12 and configured to pass the transmittedsignal 46 through thewindow 15 shown inFIG. 1 such that the transmittedsignal 46 may reflect off one or more surfaces within thevacuum chamber 12 and exit thevacuum chamber 12 as reflected or emittedsignal 48 through thesame window 15, or a different window (not shown). - The surface characteristics measured by the
sensor 50 shown inFIGS. 3A-3C may be obtained, for example, through spectroscopy techniques utilizing the absorption, emission, or scattering of electromagnetic radiation by atoms or molecules on the surface being analyzed to qualitatively or quantitatively study the atoms or molecules, or to analyze physical processes occurring on the surface. Referring toFIG. 3C , spectroscopy may be used to measure the amount and composition of residue deposits on theinner chamber wall 13. In one embodiment of the present invention, thesignal 46 transmitted toward theinner chamber wall 13 is an IR light beam and the absorption spectrum of the residue deposits on theinner chamber wall 13 is measured using IR absorption spectroscopy. IR absorption spectroscopy is the measurement of the wavelength and intensity of the absorption of the IR light by theinner chamber wall 13 and the residue deposits thereon. As discussed in relation toFIG. 12C below, Fourier-transform infrared (hereinafter “FTIR”) spectroscopy may be used, for example, to measure the absorption spectrum using Fourier-transform techniques and a Michelson interferometer. - In another embodiment of the present invention, Raman spectroscopy is used to measure the amount and composition of residue deposits on the
inner chamber wall 13. When the transmittedsignal 46 illuminates the surface of theinner chamber wall 13, a portion of the transmittedsignal 46 is scattered in various directions. Light scattered due to vibrations in molecules or optical phonons in solids is Raman scattered light. When the transmittedsignal 46 strikes theinner chamber wall 13 or the residue deposits thereon, the light is scattered elastically (i.e., Rayleigh scattering) and inelastically (i.e., Raman scattering), generating Stokes and anti-Stokes lines. In the present embodiment, the reflected or emittedsignal 48 represents a Raman scattered beam. Raman spectroscopy is the measurement of the wavelength and intensity of the inelastically scattered light of reflected or emittedsignal 48 from theinner chamber wall 13 or the residue deposits thereon. The Raman scattered light of reflected or emittedsignal 48 occurs at wavelengths that are shifted from the transmittedsignal 46 by the energies of molecular vibrations. Raman spectroscopy may provide structure determination, multicomponent qualitative analysis, and quantitative analysis of the residue deposits on theinner chamber wall 13. The mechanism of Raman scattering is different from that of IR absorption. Therefore, Raman spectroscopy and IR absorption spectroscopy may each be used to provide complementary information about the residue deposits on theinner chamber wall 13. - Returning to
FIG. 3A , to determine the amount of erosion at any location on thetarget surface 23, the reflected or emittedsignal 48 may be analyzed to determine a relative distance between thesensor 50 and thetarget surface 23. It may not be necessary to measure the relative distance between thesensor 50 and thetarget surface 23 at every point on thetarget surface 23. Due to the radial symmetry of the erosion of thetarget surface 23, it is only necessary to determine the relative distance between thesensor 50 and thetarget surface 23 at points located linearly between thecenter line 30 of thetarget surface 23 and anoutside edge 25 of thetarget surface 23, as shown inFIG. 2 . Thus, measuring the relative distance between thesensor 50 and thetarget surface 23 approximately every ten millimeters linearly between thecenter line 30 and anoutside edge 25 may provide sufficient resolution to prevent punching through atarget 22 having a diameter of approximately thirty centimeters. - In one embodiment of the present invention, the relative distance between the
sensor 50 and thetarget surface 23 is measured by measuring the time delay between the emission of the transmittedsignal 46 and detection of the reflected or emittedsignal 48, multiplying the measured time delay by the speed of the transmittedsignal 46 and dividing by two. In another embodiment, the distance between thesensor 50 and thetarget surface 23 may be determined by indirectly establishing the time delay by measuring a phase difference between the transmittedsignal 46 and the reflected or emittedsignal 48. In aphase measurement sensor 50, the transmittedsignal 46 may comprise a modulated signal. In yet another embodiment, the transmittedsignal 46 may be a pulsed signal and the reflected or emittedpulse signal 48 may be detected only during a predetermined time window such that increased time delay between transmission and detection causes less of the pulse to be detected. Thus, the detected power level of the reflected or emittedpulse signal 48 is inversely proportional to the distance traveled. Other embodiments for measuring the distance between thesensor 50 and thetarget surface 23, as presently known in the art, may also be employed. -
FIG. 4 illustrates a top view schematic of asensor 52 according to one embodiment of the present invention. Thesensor 52 is attached to athin profile arm 44, such as thearm 44 shown inFIG. 3A .Sensor 52 comprises asource element 54 and adetector array 55. Thesource element 54 has a thin profile so as to fit between thetarget 22 and thepedestal 24, as shown inFIG. 3A . Thesource element 54 is configured to generate a collimated light beam. By way of example only, and not by limitation, thesource element 54 may comprise a laser diode. Alternatively, thesource element 54 may comprise a collimator, such as a lens, configured to collimate or focus light exiting an optical fiber to a desired beam diameter or spot size. As will be seen below, the collimated light emitted from thesource element 54 minimizes extraneous reflections and enhances signal detection. Use of a collimated light beam as an energy beam is currently preferred, although the invention is not so limited. - The
detector array 55 comprises a plurality of detectors or detector elements 56 (ten shown) disposed side by side in a linear array, eachdetector 56 having a thin profile so as to fit between thetarget 22 and thepedestal 24, as shown inFIG. 3A . Eachdetector 56 in thedetector array 55 is configured to produce an electronic sensory signal related to the magnitude of the radiation received thereon. By way of example only, and not by limitation, each detector may comprise a photodiode or a charge coupled device (hereinafter “CCD”). Alternatively, eachdetector 56 in thedetector array 55 may comprise a collimator, such as a lens, configured to collect light into an optical fiber. -
FIG. 5 illustrates a side view schematic of thesensor 52 andarm 44 shown inFIG. 4 . As shown inFIG. 5 , thesource element 54 is positioned so as to emit a transmittedbeam 60 at a predetermined transmission angle α in relation to thearm 44. Although not shown, it may also be advantageous to position eachdetector 56 of thedetector array 55 at an angle in relation to thearm 44 so as to align with a corresponding reflected beam, such as reflectedbeams -
FIG. 5 also illustrates thesensor 52 positioned in relation to a portion of atarget 22, such as thetarget 22 shown inFIG. 2 . The number ofdetectors 56 in thedetector array 55 and the position of eachdetector 56 relative to thesource element 54 are dependent upon the distance between thesensor 52 and thetarget 22. For illustration purposes, threesurfaces FIG. 5 corresponding todifferent target 22 erosion states. Thefirst target surface 23 corresponds to a new orunused target 22 that has not yet been exposed to a sputtering process. The transmittedbeam 60 illuminates thenew target surface 23 and reflects back toward thedetector array 55 as reflectedbeam 62. To configure the dimensions of thedetector array 55, the vertical distance z between thenew target surface 23 and thesensor 52 may be predetermined. Thus, assuming the incident angle β of the transmittedbeam 60 and the reflected angle β′ of the reflectedbeam 62 are equal, the distance x between thesource element 54 and thenearest detector 56 in the detector array 55 (i.e., thedetector 56 illuminated by the reflected beam 62) is given by: - The
next target surface 32 shown inFIG. 5 corresponds to atarget 22 that has been used in a sputtering process wherein approximately one-third of thetarget 22 material has been eroded. As discussed above in relation toFIG. 2 , thetarget surface 32 has eroded unevenly. The transmittedbeam 60, now represented by dashedline 64, illuminates the erodedtarget surface 32 and reflects back toward thedetector array 55 as reflectedbeam 66. The reflectedbeam 66 illuminates adetector 56 in thedetector array 55 located approximately one-third of the distance between thedetector 56 located nearest thesource element 54 and thedetector 56 located farthest from thesource element 54. Therefore, it may be determined that approximately one-third of thetarget 22 material has been eroded at the measured location along thetarget surface 32. - The
next target surface 70 shown inFIG. 5 corresponds to the interface between thetarget 22 and thecathode assembly 18, as shown inFIG. 1 . The transmittedbeam 60, now represented by dashedline 68, illuminates thetarget interface surface 70 and reflects back toward thedetector array 55 as reflectedbeam 72. The reflectedbeam 72 illuminates adetector 56 in thedetector array 55 located farthest from thesource element 54. Thus, it may be determined that substantially all of thetarget 22 material has been eroded at the measured location along thetarget interface surface 70. As discussed above, use of the present invention to detect target consumption prevents thetarget interface surface 70 from being punched through and exposing portions of thecathode assembly 18 to erosion from the sputtering process. Therefore, it may be advantageous to replace thetarget 22 before thetarget interface surface 70 is detected. -
FIG. 6 illustrates a top view schematic of asensor 80 according to another embodiment of the present invention. Thesensor 80 is attached to athin profile arm 44, such as thearm 44 shown inFIG. 3A . Thesensor 80 comprises atransceiver 82 and a two-dimensional detector matrix 86 comprising a plurality of detectors 84 (24 shown). Thetransceiver 82 and thedetectors 84 each have a thin profile so as to fit between thetarget 22 and thepedestal 24, as shown inFIG. 3A . As shown inFIG. 6 , thetransceiver 82 is positioned inrow 87 of thedetector matrix 86. Eachdetector 84 in thedetector matrix 86 is configured to produce an electronic sensory signal related to the magnitude of the radiation received thereon. By way of example only, and not by limitation, eachdetector 84 may comprise a photodiode or a CCD. Alternatively, eachdetector 84 may comprise a collimator, such as a lens, configured to collect light into an optical fiber. -
FIG. 7 illustrates a side view schematic of thetransceiver 82 shown inFIG. 6 positioned in relation to a portion of atarget surface 88. As shown inFIGS. 7 and 8 , thetarget surface 88 has roughened during a deposition process. Thetransceiver 82 comprises asource element 92 and adetector 94. Thetransceiver 82 may also comprise a light-directingelement 96, such as a mirror. Thesource element 92 is configured to transmit acoherent light beam 97 of wavelength λ toward the roughenedtarget surface 88. Use of a collimated coherent light beam as an energy beam is presently preferred, although the invention is not so limited. By way of example only, and not by limitation, thesource element 92 may comprise a laser diode. Alternatively, the source element may comprise a collimator, such as a lens, configured to collimate or focus coherent light exiting an optical fiber to a desired beam diameter or spot size. - A first portion of the transmitted
coherent light beam 97 is coherently reflected by the roughenedtarget surface 88 in the specular direction back toward thetransceiver 82 as reflected coherent beam 98 (offset for illustration only). The reflectedcoherent beam 98 is directed to thedetector 94 by the light-directingelement 96 where the power of the reflectedcoherent beam 98 is measured. By way of example only, and not by limitation, thedetector 94 may comprise a photodiode or a CCD. Alternatively, thedetector 94 may comprise a collimator, such as a lens, configured to collect the coherent light into an optical fiber. -
FIG. 8 illustrates a side view schematic of thesensor 80 andarm 44 shown inFIG. 6 .FIG. 8 also illustrates thesensor 80 positioned in relation to a portion of the roughenedtarget surface 88. For illustrative purposes,FIG. 8 shows a cross-sectional view of thesensor 80 alongrow 87 of thedetector matrix 86. As discussed above in relation toFIG. 7 , thetransceiver 82 is positioned and configured to illuminate a portion of the roughenedtarget surface 88 with the transmittedcoherent light beam 97 and to detect the reflectedcoherent beam 98. A second portion of the transmittedcoherent light beam 97 is reflected and scattered by the roughenedtarget surface 88 in a three-dimensional cone-like direction back toward thedetectors 84 in thedetector matrix 86 as scattered light beams 90 (four beams shown). The dimensions of thedetector matrix 86 are configured and positioned to detect a substantial portion of the scattered light beams 90. - The roughness of the
target surface 88 may be expressed as a root-mean-square surface roughness (hereinafter “RMS_Roughness”) and may be determined as a function of the wavelength λ of the transmittedcoherent light beam 97, the detected power of the reflectedcoherent beam 98, and the detected power of the scattered light beams 90. From the detected coherent reflectedbeam 98 power (hereinafter “PCoherent”) and the detected scattered light 90 power (hereinafter “PScattered”), a scattering ratio is given by: - The ratio of the RMS_Roughness divided by the wavelength λ of the transmitted
coherent light beam 97, or RMS_Roughness/λ, is related to the scattering ratio in equation (2). If thetarget surface 88 is relatively smooth, PCoherent will be large compared to PScattered. Thus, the scattering ratio will be relatively small and the ratio RMS_Roughness/λ will also be relatively small. As thetarget surface 88 becomes increasingly rough, PScattered increases and PCoherent approaches zero. Thus, the scattering ratio becomes increasingly large and the ratio RMS_Roughness/λ will also become increasingly large. Thus, for a given wavelength λ of the transmittedcoherent light beam 97, the RMS_Roughness may be characterized. -
FIG. 9 illustrates a top view schematic of asensor 100 according to another embodiment of the present invention. Thesensor 100 is attached to athin profile arm 44, such as thearm 44 shown inFIG. 3A . Thesensor 100 comprises asource element 102 and adetector 104. Thesource element 102 and thedetector 104 each have a thin profile so as to fit between thetarget 22 and thepedestal 24, as shown inFIG. 3A . Thesource element 102 is configured to generate an energy beam. By way of example only, and not by limitation, thesource element 102 may comprise a laser diode. Alternatively, thesource element 102 may comprise a collimator configured to collimate or focus light exiting an optical fiber to a desired beam diameter or spot size. Thedetector 104 is configured to produce an electronic sensory signal related to the magnitude of the energy beam received thereon. By way of example only, and not by limitation, thedetector 104 may comprise a photodiode or a CCD. Alternatively, thedetector 104 may comprise a collimator, such as a lens, configured to collect light into an optical fiber. -
FIG. 10 illustrates a side view schematic of thesensor 100 shown inFIG. 9 positioned in relation to a portion of atarget surface 110. As shown inFIG. 10 , thetarget surface 110 comprises a plurality ofasperities 112 that have grown thereon during a deposition process. As discussed above, thetarget surface 110 may comprise silver selenide or any target material which manifests protrusion defects. As shown inFIG. 10 , thesource element 102 is positioned and configured to emit anenergy beam 114 substantially parallel to thetarget surface 110 toward thedetector 104. Thesensor 100 is configured and positioned such that theenergy beam 114 illuminates or otherwise interacts with a portion of theasperities 112. Thus, it may be advantageous to move thesensor 100 in a plane perpendicular to thetarget surface 110 as well as in a plane parallel to thetarget surface 110. The presence of theasperities 112 on thetarget surface 110 is detected by an interruption of theenergy beam 114 by a portion of theasperities 112 between thesource element 102 and thedetector 104. Similarly, the presence of theasperities 112 may be detected by a reduction in the intensity or power of the detectedenergy beam 114 caused by interactions with a portion of theasperities 112. Alternatively, the presence of theasperities 112 may be detected by measuring the roughness of thetarget surface 110 as described above in relation toFIGS. 6-8 . -
FIG. 11 is a block diagram of asputter deposition system 180 according to the present invention. Thesputter deposition system 180 comprises acontroller 182 electrically coupled tochamber circuitry 190, asensor assembly 200, aninput device 184, anoutput device 186 and adata storage device 188. Thecontroller 182 is configured to communicate an electronic transmit signal to thesensor assembly 200. Upon receipt of the transmit signal from thecontroller 182, thesensor assembly 200 is configured to transmit a beam of energy. Thesensor assembly 200 is configured to generate electronic sensory signals related to the magnitude of an emitted, reflected or scattered energy beam received thereon. Thecontroller 182 is configured to receive and analyze the sensory signals. - Referring to
FIGS. 1 and 11 , thesensor assembly 200 may be located substantially within thevacuum chamber 12. Alternatively, thesensor assembly 200 may be located substantially outside of thevacuum chamber 12 or partially outside thevacuum chamber 12. For example, thesensor assembly 200, or a portion thereof, may be located outside of thevacuum chamber 12 and configured to transmit the energy beam through thewindow 15. Similarly, thesensor assembly 200 may be configured to receive the emitted, reflected or scattered energy beam as it exits thesame window 15 or a different window (not shown). - The
controller 182 may be configured to interface with thechamber circuitry 190, includingchamber robot circuitry 192, to control the position of thesensor assembly 200 or a portion thereof relative to a surface in thevacuum chamber 12, the placement and removal of asubstrate 26 on thepedestal 24, sputter processing times, and other sputtering process andvacuum chamber 12 operations. Thecontroller 182 may further be configured to perform computer functions such as executing software to perform desired calculations and tasks. - The
input device 184 may include, by way of example only, an Internet or other network connection, a mouse, a keypad or any device that allows an operator to enter data into thecontroller 182. Theoutput device 186 may include, by way of example only, a printer or a video display device. Thedata storage device 188 may include, by way of example only, drives that accept hard and floppy discs, tape cassettes, CD-ROM or DVD-ROM. - The
sensor assembly 200 may comprise a sensor (not shown) such as the sensors discussed above or the embodiments disclosed below inFIGS. 12A-13 . For example, thesensor assembly 200 may comprise thesensor 52 attached to thearm 44 shown inFIGS. 4 and 5 . Referring toFIGS. 4, 5 and 11, thecontroller 182 is configured to communicate an electronic transmit signal to thesource element 54. Upon receipt of the transmit signal from thecontroller 182, thesource element 54 is configured to transmit a beam of collimated light. The beam of collimated light may be a pulsed beam of collimated light. Eachdetector 56 is configured to generate an electronic sensory signal related to the magnitude of the radiation received thereon. Thecontroller 182 is configured to receive and compare each of the sensory signals to determine which one of thedetectors 56 was illuminated with the greatest magnitude of radiation. Thecontroller 182 may be configured to receive the sensory signals during a predefined time window in relation to the communication of the transmit signal to thesource element 54. - The
controller 182 is further configured to determine the relative distance from thesensor 52 to atarget surface FIG. 5 , thecontroller 182 may be configured to estimate the relative amount of erosion at a location along thetarget surface detector 56 in thedetector array 55 illuminated with the greatest amount of radiation. For example, if adetector 56 located at the center of thedetector array 55 is determined by thecontroller 182 to be illuminated by a reflected beam, then thecontroller 182 may be configured to estimate that half of thetarget 22 material has been eroded at the position along thetarget surface sensor 52 to thetarget surface source element 54 and thedetector 56 being illuminated. For example, if the transmission angle α and the distance x between thesource element 54 and thenearest detector 56 inFIG. 5 are known, then equation (1) above may be used (assuming the incident angle β of the transmittedbeam 60 and the reflected angle β′ of the reflectedbeam 62 are equal) to determine the distance z between thesensor 52 and thetarget surface 23 as: -
FIGS. 12A-12C illustrate block diagrams ofsensor assemblies sensor assembly 200 shown inFIG. 11 . Thesensor assemblies FIGS. 12A-12C employ fiber optics to reduce the size of a portion of thesensor assemblies vacuum chamber 12 shown inFIG. 1 .FIG. 12A illustrates a block diagram ofsensor assembly 202 according to one embodiment of the present invention. Thesensor assembly 202 comprises asource element 210 and a plurality of reception elements 212 (four shown) attached to athin profile arm 214, such as thearm 44 shown inFIGS. 4 and 5 . Thesource element 210 comprises a collimator, such as a lens, configured to collimate or focus light exiting anoptical fiber 216 to a desired beam diameter or spot size. Eachreception element 212 comprises a collimator, such as a lens, configured to collect light incident thereon into anoptical fiber assembly 218. Thesensor assembly 202 further comprises atransmitter 204 coupled to thesource element 210 through theoptical fiber 216 and areceiver 206 coupled to each of the plurality ofreception elements 212 through theoptical fiber assembly 218. Theoptical fiber assembly 218 comprises a plurality of optical fibers, each optical fiber configured to couple to onereception element 212. - Referring to
FIGS. 11 and 12 A, thetransmitter 204 is configured to receive a transmit signal from thecontroller 182 and to transmit a beam of collimated light to thesource element 210 through theoptical fiber 216. The beam of collimated light may be a pulsed beam of collimated light. For eachreception element 212, thereceiver 206 is configured to receive a light beam through theoptical fiber assembly 218 and to generate an electronic sensory signal related to the magnitude of the radiation collected at therespective reception element 212. Thereceiver 206 is further configured to transmit each of the sensory signals to thecontroller 182. Thecontroller 182 is configured to receive and compare each of the sensory signals to determine which one of thereception elements 212 was illuminated with the greatest magnitude of radiation. Thecontroller 182 may be configured to receive the sensory signals during a predefined time window in relation to the communication of the transmit signal to thesource element 210 from thetransmitter 204. Thecontroller 182 is further configured to determine the relative distance from thesource element 210 to an object (not shown), as described above. -
FIG. 12B illustrates a block diagram ofsensor assembly 230 according to another embodiment of the present invention. Thesensor assembly 230 comprises animaging device 236, atransceiver 238 and a scatteredlight reception element 240 attached to athin profile arm 242. Theimaging device 236 may comprise a lens. Thetransceiver 238 is configured to emit acoherent light beam 250 and to receive a reflected coherent light beam 251 (offset for illustration only). Thetransceiver 238 comprises a source collimator (not shown), such as a lens, configured to collimate or focus thecoherent light beam 250 exiting anoptical fiber 244 to a desired beam diameter or spot size. Thetransceiver 238 also comprises a coherent light reception element (not shown). Thetransceiver 238 may also comprise a light-directing element (not shown), such as a mirror, configured to direct thecoherent light beam 250 from the source collimator out of thetransceiver 238 and/or to direct the reflectedcoherent light beam 251 into thetransceiver 238 to the coherent light reception element. The coherent light reception element in thetransceiver 238 and the scatteredlight reception element 240 each comprise a collimator, such as a lens, configured to collect light incident thereon into anoptical fiber assembly 246. Thesensor assembly 230 further comprises atransmitter 232 coupled to thetransceiver 238 through theoptical fiber 244 and areceiver 234 coupled to thetransceiver 238 and to the scatteredlight reception element 240 through theoptical fiber assembly 246. - Referring to
FIGS. 11 and 12 B, thetransmitter 232 is configured to receive a transmit signal from thecontroller 182 and to transmit thecoherent light beam 250 to thetransceiver 238 through theoptical fiber 244 where the source collimator emits thecoherent light beam 250 through theimaging device 236. Theimaging device 236 is configured to direct the reflectedcoherent light beam 251 to thetransceiver 238 where it is passed to thereceiver 234 through theoptical fiber assembly 246. Theimaging device 236 is further configured to direct scattered light beams 252 (two shown) to the scatteredlight reception element 240 where they are passed to thereceiver 234 through theoptical fiber assembly 246. Thereceiver 234 is configured to generate an electronic sensory signal in response to each of the received reflectedcoherent light beam 251 and scattered light beams 252. Thereceiver 234 is further configured to transmit each of the sensory signals to thecontroller 182. Thecontroller 182 is configured to receive and analyze the sensory signals as described above in relation toFIGS. 6-8 to determine the roughness of a surface (not shown) illuminated by thecoherent light beam 250. -
FIG. 12C illustrates a block diagram ofsensor assembly 260 according to yet another embodiment of the present invention. Thesensor assembly 260 comprises asource element 266 and areception element 268 attached to athin profile arm 270. Thesource element 266 comprises a collimator, such as a lens, configured to collimate or focus light exiting anoptical fiber 272 to a desired beam diameter or spot size. Thereception element 268 also comprises a collimator, such as a lens, configured to collect emitted, reflected or scattered light incident thereon into anoptical fiber 274. Thesensor assembly 260 further comprises atransmitter 262 coupled to thesource element 266 through theoptical fiber 272 and aspectrometer 264 coupled to thereception element 268 through theoptical fiber 274. - Referring to
FIGS. 11 and 12 C, thetransmitter 262 is configured to receive a transmit signal from thecontroller 182 and to transmit a beam of collimated light to thesource element 266 through theoptical fiber 272. The beam of collimated light may comprise multiple wavelengths. Thespectrometer 264 is configured to receive the collected light incident upon thereception element 268 through theoptical fiber 274 and to analyze the collected light using spectroscopy techniques. Thespectrometer 264 is further configured to generate electronic sensory signals related to the spectroscopic analysis and to transmit the sensory signals to thecontroller 182. Thecontroller 182 is configured to receive the sensory signals and to correlate the sensory signals to spectra previously stored in a database in thedata storage device 188. Thus, the sensory signals may be correlated to compositional data to determine elemental, isotropic and structural characteristics of a surface (not shown) illuminated by the transmitted beam of collimated light. For example, as discussed above, the sensory signals may be correlated to determine the amount and composition of residue deposits on theinner chamber wall 13 shown inFIG. 3C . - The
spectrometer 264 shown inFIG. 12C employs a Michelson interferometer. However, the scope of the present invention includes all spectrometers and spectroscopy techniques presently known in the art. Thespectrometer 264 comprises abeam splitter 280, a movingmirror 282, a fixedmirror 284 and areceiver 286. As an example of one spectroscopy technique suitable for use with the present invention, thespectrometer 264 may be used with Fourier-transform techniques to perform FTIR spectroscopy on the collected light incident upon thereception element 268. In this example, it is assumed that the collimated light beam transmitted bysource element 266 is an IR light beam and that the collected light incident upon thereception element 268 is a reflection of the IR light beam from a surface, such as theinner chamber wall 13 shown inFIG. 3C . The reflected IR light beam exiting theoptical fiber 274 is directed onto thebeam splitter 280. Thebeam splitter 280 directs approximately half of the reflected IR light beam to the movingmirror 282 and approximately half of the reflected IR light beam to the fixedmirror 284. After reflecting off the movingmirror 282 and the fixedmirror 284, the components of the reflected IR light beam are recombined by thebeam splitter 280 and directed to thereceiver 286. The movingmirror 282 and the fixedmirror 284 produce constructive and destructive interference in the recombined IR light beam which is detected by thereceiver 286. Thereceiver 286 is configured to convert the detected interference into sensory signals, which are then analyzed by thecontroller 182 inFIG. 11 to determine the concentration and composition of the surface being analyzed. - As another example of a spectroscopy technique suitable for use with the present invention, the
spectrometer 264 may be used to perform Raman spectroscopy on the collected light incident upon thereception element 268. In this example, it is assumed that the collimated light beam transmitted bysource element 266 comprises multiple wavelengths and that the collected light incident upon thereception element 268 is Raman scattered light from a surface illuminated with the collimated light beam, such as theinner chamber wall 13 shown inFIG. 3C . In this example, the Raman scattered light is processed by thespectrometer 264 as described above. However, the Raman scattered light undergoes additional Raman spectroscopy once it reaches thereceiver 286.FIG. 13 illustrates areceiver 300, such as thereceiver 286 shown inFIG. 12C , configured to perform Raman spectroscopy. - The
receiver 300 comprises afirst lens 306, agrating 308, asecond lens 310, and adetector 312. The Raman scattered light is directed onto the grating 308 by thefirst lens 306. The grating 308 disperses the Raman scattered light through thesecond lens 310 where it is focused onto thedetector 312. Thedetector 312 may be selected from the group comprising a CCD camera, an intensified CCD detector, a charge injection device, a photomultiplier tube detector array, a photodiode array (hereinafter “PDA”), an intensified PDA, or an avalanche photodiode array. Thedetector 312 is configured to generate sensory signals representative of the Raman spectra received thereon. The sensory signals are then analyzed by thecontroller 182 inFIG. 11 and compared to Raman spectra previously stored in a database in thedata storage device 188. Thus, structural analysis, multicomponent qualitative analysis, and quantitative analysis may be performed to determine the characteristics of the surface being analyzed. - While the invention may be susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. However, it should be understood that the invention is not intended to be limited to the particular forms disclosed. Rather, the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the following appended claims.
Claims (27)
1. An apparatus for measuring at least one characteristic of a surface in a chamber, the apparatus comprising:
a sensor configured to emit a first energy beam relative to an evaluation surface, detect a second energy beam therefrom and provide an output signal from which at least one characteristic associated with the evaluation surface may be determined; and
an arm coupled to the sensor, the arm configured to transport the sensor relative to the surface.
2. The apparatus of claim 1 , wherein the evaluation surface is a surface in the chamber selected from the group consisting of a target surface, a chamber wall, a pedestal positioned proximate the target surface, and a substrate disposed on the pedestal.
3. The apparatus of claim 1 , wherein the at least one characteristic of the evaluation surface is selected from the group consisting of erosion of the evaluation surface, roughness of the evaluation surface, a presence of asperities on the evaluation surface, a composition of deposits on the evaluation surface, and a concentration of deposits on the evaluation surface.
4. The apparatus of claim 1 , wherein the first energy beam comprises a visible light beam, an ultraviolet light beam, an infrared light beam, a radio frequency beam, a microwave beam or an ultrasound beam.
5. The apparatus of claim 1 , further comprising a pedestal positioned proximate a target surface, the target surface comprising the evaluation surface in the chamber, wherein the sensor and the arm coupled thereto are configured, positioned and sized to enter a gap between the target surface and the pedestal, wherein the arm is further configured to transport the sensor into the gap without contacting the pedestal or the target surface.
6. The apparatus of claim 1 , wherein the sensor comprises:
a transceiver configured to emit the first energy beam toward the evaluation surface and to detect a first portion of the second energy beam; and
at least one first detector configured to detect a second portion of the second energy beam.
7. The apparatus of claim 6 , wherein the first portion of the second energy beam comprises a coherently reflected portion of the first energy beam from the evaluation surface, and the second portion of the second energy beam comprises a scattered portion of the first energy beam from the evaluation surface.
8. The apparatus of claim 6 , further comprising an imaging device configured to direct the first portion of the second energy beam to the transceiver and to direct the second portion of the second energy beam to the at least one first detector.
9. The apparatus of claim 6 , wherein the transceiver comprises a second detector and a source element configured to emit the first energy beam.
10. The apparatus of claim 1 , further comprising:
a transmitter optically coupled to the sensor, the transmitter configured to transmit the first energy beam to the sensor; and
a spectrometer optically coupled to the sensor, the spectrometer configured to generate sensory signals related to spectra of the second energy beam incident thereon.
11. The apparatus of claim 10 , wherein the spectrometer is selected from the group consisting of a Raman spectrometer and an infrared absorption spectrometer.
12. The apparatus of claim 10 , wherein the spectrometer comprises:
a first mirror;
a second mirror configured to move relative to the first mirror;
a beam splitter interposed between the first mirror and the second mirror; and
a receiver configured to generate the sensory signals.
13. A method for measuring surface characteristics, the method comprising:
selectively positioning a sensor relative to an evaluation surface;
illuminating a portion of the evaluation surface with a first energy beam;
detecting a second energy beam from the portion of the evaluation surface illuminated; and
analyzing the second energy beam to determine at least one characteristic of the evaluation surface.
14. The method of claim 13 , wherein the at least one characteristic of the evaluation surface is selected from the group consisting of erosion of the evaluation surface, roughness of the evaluation surface, a presence of asperities on the evaluation surface, a composition of deposits on the evaluation surface, and a concentration of deposits on the evaluation surface.
15. The method of claim 13 , wherein selectively positioning the sensor comprises moving the sensor to a location proximate the portion of the evaluation surface.
16. The method of claim 13 , wherein selectively positioning the sensor comprises inserting the sensor into a gap between a target surface and a pedestal positioned proximate the target surface.
17. The method of claim 13 , wherein selectively positioning the sensor comprises placing the sensor proximate a window outside the sputtering chamber.
18. The method of claim 17 , further comprising emitting the first energy beam into the sputtering chamber through the window.
19. The method of claim 13 , wherein detecting the second energy beam further comprises:
detecting a coherently reflected portion of the energy beam; and
detecting a scattered portion of the energy beam.
20. The method of claim 19 , further comprising collecting the coherently reflected portion of the energy beam and the scattered portion of the energy beam into a plurality of optical fibers.
21. The method of claim 19 , wherein illuminating the portion of the evaluation surface with the energy beam comprises emitting a coherent light beam from the sensor.
22. The method of claim 21 , wherein emitting the coherent light beam comprises collimating the coherent light beam as it exits an optical fiber.
23. The method of claim 13 , wherein illuminating the portion of the evaluation surface with the first energy beam comprises illumination with a visible light beam, an ultraviolet light beam, an infrared light beam, a radio frequency beam, a microwave beam or an ultrasound beam.
24. The method of claim 13 , wherein detecting the second energy beam comprises receiving at least a Raman scattered light beam as the second energy beam.
25. The method of claim 13 , wherein analyzing the second energy beam further comprises performing a spectral analysis.
26. The method of claim 25 , wherein performing the spectral analysis comprises employing Raman spectroscopy.
27. The method of claim 25 , wherein performing the spectral analysis comprises employing a Fourier-transform analysis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/264,235 US20060054497A1 (en) | 2003-01-27 | 2005-11-01 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/352,699 US6811657B2 (en) | 2003-01-27 | 2003-01-27 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US10/609,297 US6974524B1 (en) | 2003-01-27 | 2003-06-27 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
US11/264,235 US20060054497A1 (en) | 2003-01-27 | 2005-11-01 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/609,297 Continuation US6974524B1 (en) | 2003-01-27 | 2003-06-27 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060054497A1 true US20060054497A1 (en) | 2006-03-16 |
Family
ID=32736041
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/352,699 Expired - Fee Related US6811657B2 (en) | 2003-01-27 | 2003-01-27 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US10/609,297 Expired - Fee Related US6974524B1 (en) | 2003-01-27 | 2003-06-27 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
US10/923,233 Abandoned US20050023132A1 (en) | 2003-01-27 | 2004-08-19 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US11/264,235 Abandoned US20060054497A1 (en) | 2003-01-27 | 2005-11-01 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/352,699 Expired - Fee Related US6811657B2 (en) | 2003-01-27 | 2003-01-27 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US10/609,297 Expired - Fee Related US6974524B1 (en) | 2003-01-27 | 2003-06-27 | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
US10/923,233 Abandoned US20050023132A1 (en) | 2003-01-27 | 2004-08-19 | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
Country Status (1)
Country | Link |
---|---|
US (4) | US6811657B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060157698A1 (en) * | 2005-01-14 | 2006-07-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing system, semiconductor device and method of manufacture |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6811657B2 (en) * | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US7243548B2 (en) * | 2004-04-07 | 2007-07-17 | Ut-Battelle, Llc | Surface wave chemical detector using optical radiation |
US20060021870A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Profile detection and refurbishment of deposition targets |
US20060081459A1 (en) * | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
JP4629051B2 (en) * | 2004-11-17 | 2011-02-09 | Jx日鉱日石金属株式会社 | Sputtering target-backing plate assembly and film forming apparatus |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7566384B2 (en) * | 2005-07-22 | 2009-07-28 | Praxair Technology, Inc. | System and apparatus for real-time monitoring and control of sputter target erosion |
US8795486B2 (en) * | 2005-09-26 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | PVD target with end of service life detection capability |
US7388498B2 (en) * | 2005-09-30 | 2008-06-17 | Weyerhaeuser Company | Method and system for producing and reading labels based on magnetic resonance techniques |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8790499B2 (en) | 2005-11-25 | 2014-07-29 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
JP5147083B2 (en) * | 2007-03-30 | 2013-02-20 | 国立大学法人東北大学 | Rotating magnet sputtering equipment |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
KR101337306B1 (en) * | 2008-04-21 | 2013-12-09 | 허니웰 인터내셔널 인코포레이티드 | Design and Use of DC Magnetron Sputtering Systems |
CN101334352B (en) * | 2008-07-30 | 2011-06-22 | 哈尔滨工业大学 | Hall thruster life-span estimation method |
US20130017316A1 (en) * | 2011-07-15 | 2013-01-17 | Intermolecular, Inc. | Sputter gun |
US20140183036A1 (en) * | 2012-12-27 | 2014-07-03 | Intermolecular, Inc. | In Situ Sputtering Target Measurement |
US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
CN108962709B (en) * | 2017-05-17 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Magnetron sputtering cavity and tray position error detection method |
BE1027175B1 (en) * | 2019-04-05 | 2020-11-03 | Soleras Advanced Coatings Bv | Magnetic rod with attached sensor |
US20220154330A1 (en) * | 2020-11-13 | 2022-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for detecting abnormality of thin-film deposition process |
Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4274722A (en) * | 1977-08-31 | 1981-06-23 | Fuji Photo Optical Co., Ltd. | Automatic flash light control device for camera |
US4407708A (en) * | 1981-08-06 | 1983-10-04 | Eaton Corporation | Method for operating a magnetron sputtering apparatus |
US4545882A (en) * | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
US4894132A (en) * | 1987-10-21 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Sputtering method and apparatus |
US4957605A (en) * | 1989-04-17 | 1990-09-18 | Materials Research Corporation | Method and apparatus for sputter coating stepped wafers |
US4983269A (en) * | 1986-12-23 | 1991-01-08 | Balzers Aktiengesellschaft | Method for erosion detection of a sputtering target and target arrangement |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5380419A (en) * | 1986-09-10 | 1995-01-10 | U.S. Philips Corp. | Cathode-sputtering apparatus comprising a device for measuring critical target consumption |
US5382342A (en) * | 1993-01-14 | 1995-01-17 | The United States Of America As Represented By The Department Of Energy | Fabrication process for a gradient index x-ray lens |
US5534997A (en) * | 1994-07-15 | 1996-07-09 | Bruker Analytische Messtechnik Gmbh | Raman spectrometer using a remote probe with enhanced efficiency |
US5540821A (en) * | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
US5665214A (en) * | 1995-05-03 | 1997-09-09 | Sony Corporation | Automatic film deposition control method and system |
US5719495A (en) * | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US5858464A (en) * | 1997-02-13 | 1999-01-12 | Applied Materials, Inc. | Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers |
US6008888A (en) * | 1999-03-16 | 1999-12-28 | Wizard Of Ink & Co. | Laser verification and authentication Raman spectrometer (LVARS) |
US6330253B1 (en) * | 1998-09-11 | 2001-12-11 | New Focus, Inc. | Passive thermal stabilization of the tuning element in a tunable laser |
US6351075B1 (en) * | 1997-11-20 | 2002-02-26 | Hana Barankova | Plasma processing apparatus having rotating magnets |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6416635B1 (en) * | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
US6421132B1 (en) * | 1999-10-15 | 2002-07-16 | Vladimir M. Brajovic | Method and apparatus for rapid range imaging |
US6480265B2 (en) * | 2001-03-26 | 2002-11-12 | Deep Optic Ltd. | Active target distance measurement |
US6486948B1 (en) * | 1999-09-14 | 2002-11-26 | Haishan Zeng | Apparatus and methods relating to high speed Raman spectroscopy |
US6811657B2 (en) * | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE10512T1 (en) | 1980-08-08 | 1984-12-15 | Battelle Development Corporation | DEVICE FOR COATING SUBSTRATES USING HIGH POWER CATHODE SPRAYING AND SPRAYING CATHODE FOR THIS DEVICE. |
-
2003
- 2003-01-27 US US10/352,699 patent/US6811657B2/en not_active Expired - Fee Related
- 2003-06-27 US US10/609,297 patent/US6974524B1/en not_active Expired - Fee Related
-
2004
- 2004-08-19 US US10/923,233 patent/US20050023132A1/en not_active Abandoned
-
2005
- 2005-11-01 US US11/264,235 patent/US20060054497A1/en not_active Abandoned
Patent Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4274722A (en) * | 1977-08-31 | 1981-06-23 | Fuji Photo Optical Co., Ltd. | Automatic flash light control device for camera |
US4407708A (en) * | 1981-08-06 | 1983-10-04 | Eaton Corporation | Method for operating a magnetron sputtering apparatus |
US4545882A (en) * | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
US5380419A (en) * | 1986-09-10 | 1995-01-10 | U.S. Philips Corp. | Cathode-sputtering apparatus comprising a device for measuring critical target consumption |
US4983269A (en) * | 1986-12-23 | 1991-01-08 | Balzers Aktiengesellschaft | Method for erosion detection of a sputtering target and target arrangement |
US4894132A (en) * | 1987-10-21 | 1990-01-16 | Mitsubishi Denki Kabushiki Kaisha | Sputtering method and apparatus |
US4957605A (en) * | 1989-04-17 | 1990-09-18 | Materials Research Corporation | Method and apparatus for sputter coating stepped wafers |
US5091320A (en) * | 1990-06-15 | 1992-02-25 | Bell Communications Research, Inc. | Ellipsometric control of material growth |
US5719495A (en) * | 1990-12-31 | 1998-02-17 | Texas Instruments Incorporated | Apparatus for semiconductor device fabrication diagnosis and prognosis |
US5382342A (en) * | 1993-01-14 | 1995-01-17 | The United States Of America As Represented By The Department Of Energy | Fabrication process for a gradient index x-ray lens |
US5540821A (en) * | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
US5534997A (en) * | 1994-07-15 | 1996-07-09 | Bruker Analytische Messtechnik Gmbh | Raman spectrometer using a remote probe with enhanced efficiency |
US5665214A (en) * | 1995-05-03 | 1997-09-09 | Sony Corporation | Automatic film deposition control method and system |
US5955139A (en) * | 1995-05-03 | 1999-09-21 | Sony Corporation | Automatic film deposition control |
US6416635B1 (en) * | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
US20020144891A1 (en) * | 1995-07-24 | 2002-10-10 | Tokyo Electron Limited Of Tbs Broadcast Center | Method and apparatus for sputter coating with variable target to substrate spacing |
US5858464A (en) * | 1997-02-13 | 1999-01-12 | Applied Materials, Inc. | Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers |
US6351075B1 (en) * | 1997-11-20 | 2002-02-26 | Hana Barankova | Plasma processing apparatus having rotating magnets |
US6390019B1 (en) * | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6330253B1 (en) * | 1998-09-11 | 2001-12-11 | New Focus, Inc. | Passive thermal stabilization of the tuning element in a tunable laser |
US6008888A (en) * | 1999-03-16 | 1999-12-28 | Wizard Of Ink & Co. | Laser verification and authentication Raman spectrometer (LVARS) |
US6486948B1 (en) * | 1999-09-14 | 2002-11-26 | Haishan Zeng | Apparatus and methods relating to high speed Raman spectroscopy |
US6421132B1 (en) * | 1999-10-15 | 2002-07-16 | Vladimir M. Brajovic | Method and apparatus for rapid range imaging |
US6480265B2 (en) * | 2001-03-26 | 2002-11-12 | Deep Optic Ltd. | Active target distance measurement |
US6811657B2 (en) * | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060157698A1 (en) * | 2005-01-14 | 2006-07-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing system, semiconductor device and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
US6974524B1 (en) | 2005-12-13 |
US20050023132A1 (en) | 2005-02-03 |
US20040144638A1 (en) | 2004-07-29 |
US6811657B2 (en) | 2004-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060054497A1 (en) | Apparatus, method and system for monitoring chamber parameters associated with a deposition process | |
US6873419B2 (en) | Method and apparatus for three-dimensional compositional mapping of heterogeneous materials | |
US6532068B2 (en) | Method and apparatus for depth profile analysis by laser induced plasma spectros copy | |
US5778039A (en) | Method and apparatus for the detection of light elements on the surface of a semiconductor substrate using x-ray fluorescence (XRF) | |
US5225888A (en) | Plasma constituent analysis by interferometric techniques | |
US5943130A (en) | In situ sensor for near wafer particle monitoring in semiconductor device manufacturing equipment | |
US5798832A (en) | Process and device for determining element compositions and concentrations | |
KR19980032091A (en) | Patent application title: PARTICLE MONITOR DEVICE AND PARTICLE NOISE EVALUATION PROCESSING DEVICE WITH THE SAME | |
KR20020012476A (en) | A method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device | |
WO1992008120A1 (en) | Pulsed laser flow cytometry | |
US7391508B2 (en) | Arc/spark optical emission spectroscopy correlated with spark location | |
JP4165797B2 (en) | Method and apparatus for real-time determination of the composition of a solid sample as a function of depth within the sample | |
JPH0913171A (en) | Apparatus for monitoring in-process film thickness therefor | |
JP6653906B2 (en) | Target wear detecting mechanism, sputtering apparatus having the same, and target wear detecting method | |
CA2353014A1 (en) | Method and apparatus for depth profile analysis by laser induced plasma spectroscopy | |
CA2178467A1 (en) | Process and device for real time control of ionizing radiation dosage | |
US6546784B2 (en) | Laser apparatus for measuring dirt density on steel plates | |
FR2825468A1 (en) | METHOD FOR THE OPTICAL DETECTION OF CHEMICAL SPECIES CONTAINED IN CONDENSED MEDIA | |
JP2002526767A (en) | Method and system for isotope-selective measurement of chemical elements present in substances | |
KR101833764B1 (en) | Filtering device in vacuum deposition chamber and System for preventing optical fiber's surface contaminants | |
EP4211447A1 (en) | Kinematics path method for laser-induced breakdown spectroscopy | |
JP2004226376A (en) | In situ analyzing method and device of thin film | |
Noll et al. | LIBS Instruments | |
JPH10122963A (en) | Capillary tube for raman spectrophotometry, its manufacture, and raman spectrophotometry using the capillary tube | |
JP2001066256A (en) | Fine particle component analyzing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |