US20060097385A1 - Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same - Google Patents
Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same Download PDFInfo
- Publication number
- US20060097385A1 US20060097385A1 US10/972,910 US97291004A US2006097385A1 US 20060097385 A1 US20060097385 A1 US 20060097385A1 US 97291004 A US97291004 A US 97291004A US 2006097385 A1 US2006097385 A1 US 2006097385A1
- Authority
- US
- United States
- Prior art keywords
- light emitting
- mounting substrate
- substrate according
- semiconductor light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
- F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Definitions
- This invention relates to semiconductor light emitting devices and manufacturing methods therefor, and more particularly to packaging and packaging methods for semiconductor light emitting devices.
- a semiconductor light emitting device such as Light Emitting Diodes (LEDs) or laser diodes, are widely used for many applications.
- a semiconductor light emitting device includes one or more semiconductor layers that are configured to emit coherent and/or incoherent light upon energization thereof. It is also known that the semiconductor light emitting device generally is packaged to provide external electrical connections, heat sinking, lenses or waveguides, environmental protection and/or other functions.
- a two-piece package for a semiconductor light emitting device wherein the semiconductor light emitting device is mounted on a substrate that comprises alumina, aluminum nitride and/or other materials, which include electrical traces thereon, to provide external connections for the semiconductor light emitting device.
- a second substrate which may comprise silver plated copper, is mounted on the first substrate, for example using glue, surrounding the semiconductor light emitting device.
- a lens may be placed on the second substrate over the semiconductor light emitting device.
- Some embodiments of the present invention provide a mounting substrate for a semiconductor light emitting device that includes a solid metal block having first and second opposing metal faces.
- the first metal face includes therein a cavity that is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity.
- the second metal face includes therein a plurality of heat sink fins.
- a reflective coating is provided in the cavity.
- first and second conductive traces are provided in the cavity that are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity.
- an insulating layer is provided on the first metal face, and a conductive layer is provided on the insulating layer that is patterned to provide the reflective coating in the cavity and the first and second conductive traces in the cavity.
- the solid metal block can be a solid aluminum block with an aluminum oxide insulating layer. In other embodiments, the solid metal block is a solid steel block with a ceramic insulating layer.
- the first metal face includes a pedestal therein, and the cavity is in the pedestal.
- the solid metal block includes a through hole therein that extends from the first face to the second face.
- the through hole includes a conductive via therein that is electrically connected to the first or second conductive traces.
- a semiconductor light emitting device is mounted in the cavity.
- a lens extends across the cavity.
- the lens when the cavity is in a pedestal, the lens extends across the pedestal and across the cavity.
- a flexible film that includes an optical element therein is provided on the first metal face, wherein the optical element extends across the cavity or extends across the pedestal and across the cavity. Accordingly, semiconductor light emitting device packages may be provided.
- Phosphor also may also be provided according to various elements of the present invention.
- a coating including phosphor is provided on the inner and/or outer surface of the lens or optical element.
- the lens or optical element includes phosphor dispersed therein.
- a phosphor coating is provided on the semiconductor light emitting device itself. Combinations of these embodiments also may be provided.
- An integrated circuit also may be provided on the solid metal block that is electrically connected to the first and second traces.
- the integrated circuit may be a light emitting device driver integrated circuit.
- an optical coupling medium may be provided in the cavity and at least partially surrounding the light emitting device.
- the first metal face includes therein a plurality of cavities, a respective one of which is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by the at least one semiconductor light emitting device that is mounted therein away from the respective cavity.
- the second metal face includes a plurality of heat sink fins.
- a reflective coating, conductive traces, an insulating layer, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media also may be provided according to any of the embodiments that were described above, to provide semiconductor light emitting device packages.
- the cavities may be uniformly and/or nonuniformly spaced apart from one another in the first face.
- Semiconductor light emitting devices may be packaged according to some embodiments of the present invention by fabricating a solid metal block including one or more cavities in a first face thereof and a plurality of heat sink fins in a second face thereof, forming an insulating layer on the first face, forming a conductive layer and mounting a semiconductor light emitting device in at least one of the cavities.
- Pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media may be provided according to any of the embodiments that were described above.
- FIGS. 1A-1H are side cross-sectional views of mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention.
- FIG. 2 is a flowchart of steps that may be performed to fabricate mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention.
- FIGS. 3A and 3B are top and bottom perspective views of a semiconductor light emitting device package according to various embodiments of the present invention.
- FIG. 4 is an exploded perspective view of a packaged semiconductor light emitting device according to various embodiments of the present invention.
- FIG. 5 is an assembled perspective view of a packaged semiconductor light emitting device according to various embodiments of the present invention.
- FIGS. 6A-6H are cross-sectional views of transmissive optical elements according to various embodiments of the present invention that may be used with semiconductor light emitting devices.
- FIG. 7 is a cross-sectional view of a semiconductor light emitting device package according to other embodiments of the present invention.
- FIG. 8 is a schematic diagram of a molding apparatus that may be used to fabricate optical elements according to embodiments of the present invention.
- FIGS. 9 and 10 are flowcharts of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention.
- FIGS. 11A and 11B , 12 A and 12 B, and 13 A and 13 B are cross-sectional views of semiconductor light emitting device packages during intermediate fabrication steps according to various embodiments of the present invention.
- FIG. 14 is an exploded cross-sectional view of a semiconductor light emitting device package and fabrication methods therefor, according to various embodiments of the present invention.
- FIGS. 15-25 are cross-sectional views of semiconductor light emitting device packages according to various embodiments of the present invention.
- FIG. 26 is a perspective view of a semiconductor light emitting device package according to various embodiments of the present invention.
- FIG. 27 is a side cross-sectional view of a packaged semiconductor light emitting device according to various embodiments of the present invention.
- FIG. 28 is a perspective view of FIG. 27 .
- FIG. 29 is a side cross-sectional view of a packaged semiconductor light emitting device according to other embodiments of the present invention.
- FIG. 30 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention.
- first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
- relative terms such as “lower”, “base”, or “horizontal”, and “upper”, “top”, or “vertical” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure.
- Embodiments of the present invention are described herein with reference to cross section illustrations that are schematic illustrations of idealized-embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated, typically, may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present invention.
- FIGS. 1A-1H are side cross-sectional views of mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention.
- mounting substrates for semiconductor light emitting devices include a solid metal block 100 having a cavity 110 in a first metal face 100 a thereof, that is configured to mount a semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity 110 .
- the solid metal block 100 is a solid aluminum block or a solid steel block.
- the cavity 110 may be formed by machining, coining, etching and/or other conventional techniques.
- the size and shape of the cavity 110 may be configured to enhance or optimize the amount and/or direction of light that is reflected away from the cavity 110 from a semiconductor light emitting device that is mounted in the cavity 110 .
- a semiconductor light emitting device that is mounted in the cavity 110 .
- oblique sidewalls 110 a and or a semi-ellipsoidal cross-sectional profile may be provided, so as to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity 110 .
- An additional reflective layer also may be provided on the cavity sidewall and/or floor, as will be described below.
- the second metal face 100 b of the solid metal block 100 includes a plurality of heat sink fins 190 therein.
- the number, spacing and/or geometry of the heat sink fins 190 may be varied for desired heat dissipation, as is well known to those having skill in the art.
- the heat sink fins need not be uniformly spaced, need not be straight, need not be rectangular in cross-section, and can be provided in a one-dimensional elongated array and/or in a two-dimensional array of heat sink fin posts using techniques that are well known to those having skill in the art.
- Each fin may itself include one or more projecting fins thereon.
- the metal block 100 may be a rectangular solid metal block of aluminum or steel about 6 mm ⁇ about 9 mm, and about 2 mm thick, and the cavity 110 may be about 1.2 mm deep with a circular floor that is about 2.5 mm in diameter, with sidewalls 110 a that are of any simple or complex shape to obtain desired radiation patterns.
- the block 100 may have other polygonal and/or ellipsoidal shapes.
- an array of 12 heat sink fins 190 may be provided, wherein the heat sink fins have a width of 2 mm, a pitch of 5 mm and a depth of 9 mm.
- many other configurations of heat sink fins 190 may be provided. For example, many heat sink design profiles may be found on the Web at aavid.com.
- FIG. 1B illustrates mounting substrates according to other embodiments of the present invention.
- an electrically insulating coating 120 is provided on the surface of the solid metal block 100 .
- the insulating coating 120 may be provided on the entire exposed surface of the solid metal block, including the heat sink fins 190 , or excluding the heat sink fins 190 as shown in FIG. 1B , or on only a smaller portion of the exposed surface of the solid metal block.
- the insulating coating 120 includes a thin layer of aluminum oxide (A 2 O 3 ) that may be formed, for example, by anodic oxidation of the solid metal block 100 in embodiments where the solid metal block 100 is aluminum.
- the insulating coating 120 includes a ceramic coating on a solid steel block 100 .
- the coating 120 is sufficiently thick to provide an electrical insulator, but is maintained sufficiently thin so as not to unduly increase the thermal conductive path therethrough.
- Solid metal blocks 100 of aluminum including thin insulating coatings 120 of aluminum oxide may be provided using substrates that are marketed by the IRC Advanced Film Division of TT Electronics, Corpus Christi, Tex., under the designation AnothermTM, that are described, for example, in brochures entitled Thick Film Application Specific Capabilities and Insulated Aluminum Substrates, 2002, both of which are available on the Web at irctt.com.
- solid metal blocks 100 of steel with an insulating coating 120 of ceramic may be provided using substrates that are marketed by Heatron Inc., Leavenworth, Kans., under the designation ELPOR°, that are described, for example, in a brochure entitled Metal Core PCBs for LED Light Engines, available on the Web at heatron.com.
- Cavities 110 and heat sink fins 190 may be provided in these solid metal blocks according to any of the embodiments described herein.
- Other solid metal blocks 100 with insulating coatings 120 may be provided with at least one cavity 110 in a first metal face 100 a thereof, and a plurality of heat sink fins 190 in a second metal face 100 b thereof in other embodiments of the present invention.
- first and second spaced apart conductive traces 130 a, 130 b are provided on the insulating coating 120 in the cavity 110 .
- the first and second spaced apart conductive traces 130 a, 130 b are configured to connect to a semiconductor light emitting device that is mounted in the cavity 110 .
- the first and second spaced apart conductive traces 130 a and 130 b can extend from the cavity 110 onto the first face 100 a of the solid metal block 100 .
- the insulating coating 120 When the insulating coating 120 is provided on only a portion of the solid metal block 100 , it may be provided between the first and second spaced apart traces 130 a and 130 b and the solid metal block 100 , to thereby insulate the first and second metal traces 130 a and 130 b from the solid metal block 100 .
- FIG. 1D illustrates other embodiments of the present invention wherein the first and second spaced apart conductive traces 130 a ′, 130 b ′ extend from the cavity 110 to the first face 100 a around at least one side 100 c of the metal block and onto a second face 100 b of the metal block that is opposite the first face 110 a.
- backside contacts may be provided.
- the first and second spaced apart conductive traces 130 a, 130 b and/or 130 a ′, 130 b ′ comprise metal and, in some embodiments, a reflective metal such as silver.
- a conductive layer is provided on the insulating layer 120 that is patterned to provide a reflective coating in the cavity 110 and first and second conductive traces 130 a, 130 b that are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity 110 .
- one or more separate reflective layers 132 a, 132 b may be provided on the spaced apart conductive traces 130 a ′, 130 b ′ and/or in the cavity 110 .
- the conductive traces 130 a ′, 130 b ′ may comprise copper
- the reflective layers 132 a, 132 b may comprise silver.
- the conductive traces may comprise silver to provide an integral reflector.
- a separate reflector layer need not be provided. Rather, the surface of the cavity 110 including the sidewall 110 a may provide sufficient reflectance.
- the cavity 110 is configured geometrically to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein, for example, by providing oblique sidewall(s) 110 a, reflective oblique sidewall(s) 110 a and/or a reflective coating 132 a and/or 132 b on the oblique sidewall(s) 110 a and/or on the floor of the cavity 110 , such that the dimensions and/or sidewall geometry of the cavity act to reflect light that is emitted by at least one semiconductor light emitting device that is mounted in the cavity 110 , away from the cavity 110 . Reflection may be provided or enhanced by the addition of a reflective coating 132 a and/or 132 b in the cavity 110 .
- backside contacts may be provided by providing first and/or second through holes 140 a and/or 140 b, which may be formed in the solid metal block 100 by machining, etching and/or other conventional techniques.
- the insulating coating 120 extends into the through holes 140 a and 140 b.
- First and second conductive vias 142 a, 142 b are provided in the first and second through holes 140 a, 140 b, and are insulated from the solid metal block 100 by the insulating coating 120 in through holes 140 a, 140 b.
- the through holes 140 a and 140 b, and the conductive vias 142 a and 142 b extend from the cavity 110 to the second face 100 b.
- the through holes 140 a, 140 b may be orthogonal and/or oblique to the first and second faces 100 a, 100 b.
- First and second spaced apart conductive traces 130 a ′, 130 b ′ may be provided in the cavity 110 , and electrically connected to the respective first and second conductive vias 142 a, 142 b.
- third and fourth spaced apart conductive traces 130 c, 130 d also may be provided that are electrically connected to the respective first and second conductive vias 142 a, 142 b.
- a solder mask layer may be provided in some embodiments to isolate the third and fourth conductive traces 130 c, 130 d on the second face 100 b, to facilitate circuit board assembly. Solder mask layers are well known to those having skill in the art and need not be described further herein. As shown in FIG. 1F , heat sink fins 190 may be provided in the center and/or at the edges of the solid metal block 100 , i.e., adjacent the cavity 110 and/or offset from the cavity 110 .
- the first and second through holes 140 a, 140 b and the first and second conductive vias 142 a, 142 b extended from the cavity 110 to the second face 100 b.
- the first and second through holes 140 a ′, 140 b ′ and the first and second conductive vias 142 a ′, 142 b ′ extend from the first face 100 a outside the cavity 110 to the second face 100 b.
- the through holes 140 a ′, 140 b ′ may be orthogonal and/or oblique to the first and second faces 100 a, 100 b.
- First and second spaced apart conductive traces 130 a ′′, 130 b ′′ extend from the cavity 110 to the respective first and second conductive vias 142 a ′, 142 b ′ on the first face 100 a.
- Third and fourth traces 130 c ′, 130 d ′ are provided on the second face 100 b that electrically connect to the respective first and second conductive via 142 a ′, 142 b ′.
- heat sink fins 190 may be provided in the center and/or at the edges of the solid metal block 100 , i.e., adjacent the cavity 110 and/or offset from the cavity 110 .
- FIG. 1H illustrates embodiments of the invention that were described in connection with FIG. 1D , and which further include a semiconductor light emitting device 150 that is mounted in the cavity and that is connected to the first and second spaced apart electrical traces 130 a ′, 130 b ′. Moreover, FIG. 1H illustrates that in other embodiments, a lens 170 extends across the cavity. In still other embodiments, an encapsulant 160 is provided between the semiconductor light emitting device 150 and the lens 170 . The encapsulant 160 may comprise clear epoxy and can enhance optical coupling from the semiconductor light emitting device 150 to the lens 170 . The encapsulant 160 also may be referred to herein as an optical coupling media. In some embodiments, a lens retainer 180 is provided on the solid metal block 100 , to hold the lens 170 across the cavity 110 . In other embodiments, the lens retainer 180 may not be used.
- the semiconductor light emitting device 150 can comprise a light emitting diode, laser diode and/or other device which may include one or more semiconductor layers, which may comprise silicon, silicon carbide, gallium nitride and/or other semiconductor materials, a substrate which may comprise sapphire, silicon, silicon carbide, gallium nitride or other microelectronic substrates, and one or more contact layers which may comprise metal and/or other conductive layers.
- semiconductor layers which may comprise silicon, silicon carbide, gallium nitride and/or other semiconductor materials
- a substrate which may comprise sapphire, silicon, silicon carbide, gallium nitride or other microelectronic substrates
- contact layers which may comprise metal and/or other conductive layers.
- the light emitting device 150 may be gallium nitride based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, N.C.
- the present invention may be suitable for use with LEDs and/or lasers as described in U.S. Pat. Nos.
- the LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate.
- the substrate may be patterned so as to enhance light output of the devices as is described, for example, in the above-cited U.S. Patent Publication No. US 2002/0123164 A1.
- FIGS. 1A-1H have been illustrated as separate embodiments, various elements of FIGS. 1A-1H may be used together to provide various combinations and/or subcombinations of elements.
- the reflective layer 132 a, 132 b may be used in any of the embodiments shown, and the semiconductor light emitting device 150 , lens 170 , encapsulant 160 and/or the lens retainer 180 may be used in any of the embodiments shown. Accordingly, the present invention should not be limited to the separate embodiments that are shown in FIGS. 1A-1H .
- FIG. 2 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention.
- a solid block such as an aluminum or steel block 100 of FIGS. 1A-1H , is provided including a cavity, such as cavity 110 , in a face thereof, that is configured to mount a semiconductor light emitting device therein and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity 110 .
- the block 100 also includes therein a plurality of heat sink fins 190 on the second face 100 b thereof.
- the cavity may be provided by machining, coining, etching and/or other conventional techniques.
- the heat sink fins 190 may also be provided by these and/or other techniques.
- the solid metal block may also contain the first and second spaced apart through holes such as through holes 140 a, 140 b and/or 140 a ′, 140 b ′ that extend therethrough, and which may be fabricated by machining, etching and/or other conventional techniques.
- an insulating coating is formed on at least some of the surface of the solid metal block.
- a solid aluminum block is oxidized.
- a ceramic coating is provided on a solid steel block.
- Other insulating coatings and other solid metal blocks may be provided.
- the entire exposed surface of the solid metal block is coated.
- the inner surfaces of the through holes also may be coated.
- only portions of the metal block are coated, for example, by providing a masking layer on those portions which are desired not to be coated.
- Oxidization of aluminum is well known to those having skill in the art and may be performed, for example, using an anodic oxidation processes and/or other oxidation processes, to provide a thin layer of Al 2 O 3 on the aluminum. Ceramic coatings on steel are also well known to those having skill in the art and need not be described further herein.
- first and second spaced apart conductive traces are fabricated in the cavity on the first face, on the sides and/or on the second face, depending on the configuration, as was described above.
- conductive vias such as vias 142 a, 142 b and/or 142 a ′, 142 b ′ may be fabricated in through holes.
- the conductive vias and/or the reflector layer may be fabricated prior to, concurrent with and/or after the conductive traces.
- the fabrication of conductive traces on a solid metal block that is coated with an insulating layer is well known to provide circuit board-like structures with an aluminum, steel and/or other core, and accordingly need not be described in detail herein.
- Block 240 other operations are performed to mount the semiconductor device, lens, flexible film encapsulant and/or retainer on the substrate, as described herein. It also will be noted that in some alternate implementations, the functions/acts noted in the blocks of FIG. 2 may occur out of the order noted in the flowchart. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
- FIGS. 3A and 3B are top and bottom perspective views, respectively, of packages according to embodiments of the present invention, which may correspond to the cross-sectional view of FIG. 1D .
- FIGS. 3A and 3B illustrate the solid metal block 100 , the cavity 110 , the fins 190 , the first and second spaced apart conductive traces 130 a ′, 130 b ′ that wrap around the solid metal block, and the semiconductor light emitting device 150 mounted in the cavity 110 .
- the insulating coating 120 may be transparent and is not shown.
- a second insulating layer and/or solder mask may be provided on the first and/or second spaced apart conductive traces in these and/or any other embodiments.
- FIG. 4 illustrates an exploded perspective view of other embodiments of the present invention, which may correspond to FIG. 1H .
- the solid metal block 100 includes a cavity 110 therein, and a plurality of spaced apart electrical traces thereon.
- the first electrical trace 130 a ′ is shown.
- a plurality of second electrical traces 330 a ′, 330 b ′ and 330 c ′ may be provided to connect to a plurality of semiconductor light emitting devices 150 ′ that may be mounted in the cavity 110 to provide, for example, red, green and blue semiconductor light emitting devices for a white light source.
- the encapsulant 160 and lens retainer 180 are shown.
- lens retainers 180 can provide a ridge and/or other conventional mounting means for mounting a lens 170 on the solid metal block 100 . It also will be understood that an epoxy or other glue may be used in a lens retainer 180 . The lens retainer 180 may also provide additional top heat sinking capabilities in some embodiments of the present invention.
- FIG. 5 illustrates the assembled package of FIG. 4 .
- some embodiments of the present invention use a solid metal block as a mounting substrate for a semiconductor light emitting device and include one or more integral cavities and a plurality of integral heat sink fins.
- Aluminum or steel have sufficient thermal conductivity to be used as an effective heat sink when integral fins are provided. Additionally, the cost of the material and the cost of fabrication can be low. Moreover, the ability to grow high quality insulating oxides and/or provide ceramic coatings allows the desired electrical traces to be formed without a severe impact on the thermal resistance, since the thickness of the anodic oxidation or other coating can be precisely controlled.
- This insulating layer also can be selectively patterned, which can allow the addition of another plated metal to the substrate, such as plating silver on the cavity sidewalls only, for increased optical performance.
- Embodiments of the invention may be particularly useful for high power semiconductor light emitting devices such as high power LEDs and/or laser diodes.
- Phosphors may be included in a light emitting device using many conventional techniques. In one technique, phosphor is coated inside and/or outside a plastic shell of the device. In other techniques, phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition. In still other embodiments, a drop of a material such as epoxy that contains phosphor therein may be placed inside the plastic shell, on the semiconductor light emitting device and/or between the device and the shell. LEDs that employ phosphor coatings are described, for example, in U.S. Pat. Nos. 6,252,254; 6,069,440; 5,858,278; 5,813,753; 5,277,840; and 5,959,316.
- the lens includes phosphor dispersed therein.
- FIGS. 6A-6H are cross-sectional views of transmissive optical elements according to various embodiments of the present invention. These optical elements may be used to package semiconductor light emitting devices as will also be described below.
- transmissive optical elements include a lens 170 that comprises transparent plastic.
- transparent means that optical radiation from the semiconductor light emitting device can pass through the material without being totally absorbed or totally reflected.
- the lens 170 includes phosphor 610 dispersed therein.
- the lens 170 may comprise polycarbonate material and/or other conventional plastic materials that are used to fabricate transmissive optical elements.
- the phosphor 610 can comprise any conventional phosphor including cerium-doped YAG and/or other conventional phosphors.
- the phosphor comprises Cerium doped Yttrium Aluminum Garnet (YAG:Ce). In other embodiments, nano-phosphors may be used. Phosphors are well known to those having skill in the art and need not be described further herein.
- the phosphor 610 is uniformly dispersed within the lens 170 .
- the phosphor 620 is nonuniformly dispersed in the lens 170 .
- Various patterns of phosphor 620 may be formed, for example, to provide areas of higher intensity and/or different color and/or to provide various indicia on the lens 170 when illuminated.
- the lens 110 is a dome-shaped lens.
- dome and “dome-shaped” refer to structures having a generally arcuate surface profile, including regular hemispherical structures as well as other generally arcuate structures that do not form a regular hemisphere, which are eccentric in shape and/or have other features, structures and/or surfaces.
- one or more coatings 630 may be provided on the outside of the lens 170 .
- the coating may be a protective coating, a polarizing coating, a coating with indicia and/or any other conventional coating for an optical element that is well known to those having skill in the art.
- one or more inner coatings 640 is provided on the inner surface of the lens 170 . Again, any conventional coating or combination of coatings may be used.
- embodiments of the invention provide both an inner and an outer coating for the lens 170 that includes uniformly distributed phosphor 610 and/or nonuniformly distributed phosphor 620 therein.
- improved index matching to the phosphor may be provided.
- three layers may be injection molded according to some embodiments of the present invention.
- Other embodiments of the present invention can use an index matching media, such as a liquid and/or solid gel, within the shell, to assist in index matching.
- the use of inner and outer layers can reduce the number of photons that can be trapped in the phosphor-containing layer due to index matching issues.
- FIG. 6E describes other embodiments of the present invention wherein a transparent inner core 650 is provided inside the lens 170 .
- the transparent inner core 650 fills the lens 170 , to provide a hemispherical optical element.
- the transparent inner core 650 may be uniformly transparent and/or may include translucent and/or opaque regions therein.
- the transparent inner core 650 may comprise glass, plastic and/or other optical coupling media.
- FIG. 6F illustrates other embodiments of the present invention wherein a phosphor-containing lens 170 is combined with a semiconductor light emitting device 150 that is configured to emit light 662 into and through the transparent inner core 650 and through the lens 170 , to emerge from the lens 170 .
- FIG. 6G is a cross-sectional view of other embodiments of the present invention.
- a mounting substrate 100 is provided, such that the light emitting device 150 is between the mounting substrate 100 and the transparent inner core 650 .
- the mounting substrate 100 includes a cavity 110 therein and the light emitting device 150 is at least partially in the cavity 110 .
- Heat sink fins 190 also are provided.
- FIG. 6H illustrates yet other embodiments of the present invention.
- the cavity 110 may be filled with an encapsulant 680 , such as epoxy and/or other optical coupling media (e.g., silicon).
- the encapsulant 680 can enhance optical coupling from the light emitting device 150 to the transparent inner core 650 .
- Heat sink fins 190 also are provided.
- FIGS. 6A-6H have been illustrated as separate embodiments, various elements of FIGS. 6A-6H may be used together in various combinations and subcombinations of elements.
- combinations of inner and outer coatings 640 and 630 , uniformly distributed phosphor 610 and nonuniformly distributed phosphor 620 , light emitting devices 150 , mounting substrates 100 , cavities 110 , inner cores 650 and encapsulant 680 may be used together.
- embodiments of FIGS. 6A-6H may be combined with any other embodiments disclosed herein.
- FIG. 7 is a cross-sectional view of light emitting devices according to other embodiments of the present invention.
- these embodiments include a lens 170 which may be made of optically transparent material that is loaded with phosphor and/or other chemicals.
- An inner core 650 may be made of optically transparent material such as plastic or glass and may be placed on an encapsulating-containing cavity 110 in a mounting substrate 100 including heat sink fins 190 .
- the lens 170 and the inner core 650 form a composite lens for a light emitting diode 150 .
- FIG. 8 is a schematic block diagram of an apparatus for forming transmissive optical elements according to various embodiments of the present invention.
- FIG. 8 illustrates an injection molding apparatus that may be used to form transmissive optical elements according to various embodiments of the present invention.
- an injection molding apparatus includes a hopper 810 or other storage device in which a transparent plastic and/or phosphor additive 850 are provided.
- the transparent plastic and/or phosphor additive may be provided in pellet, powder and/or solid form.
- Other additives, such as solvents, binders, etc. may be included, as is well known to those having skill in the art.
- An injector 820 may include a heater and a screw mechanism that is used to melt the transparent plastic and phosphor additive and/or maintain these materials in a melted state, to provide a molten liquid that comprises transparent plastic and the phosphor additive.
- the injector 820 injects the molten liquid into a mold 840 via nozzle 830 .
- the mold 840 includes an appropriate channel 860 therein, which can be used to define the shape of the optical element, such as a dome or keypad key. Injection molding of optical elements is well known to those having skill in the art and is described, for example, in U.S. Pat. Nos.
- FIG. 9 is a flowchart of steps that may be used to package semiconductor light emitting devices according to various embodiments of the present invention.
- a mold such as mold 840 of FIG. 8
- molten liquid that comprises a transparent plastic and a phosphor additive.
- the molten liquid is allowed to solidify to produce the optical element having phosphor dispersed therein.
- the optical element is then removed from the mold and mounted across a cavity in a solid metal block.
- FIG. 10 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to embodiments of the present invention.
- a lens such as a dome-shaped lens 170 , that comprises a transparent plastic including a phosphor dispersed therein, is molded using injection molding, casting and/or other conventional techniques.
- a core such as a core 650 of FIG. 6E is formed.
- the core 650 is placed or formed inside the lens 170
- Block 1020 precedes Block 1010 by forming a transparent core 650 and filling a mold that includes a transparent core 650 with a molten liquid that comprises a transparent plastic and a phosphor additive, to form the lens 170 around the transparent core.
- a semiconductor light emitting device such as device 150
- a mounting substrate such as mounting substrate 100
- an encapsulant such as encapsulant 680 of FIG. 6H
- the lens or shell is mated to the mounting substrate using an epoxy, a snap-fit and/or other conventional mounting techniques.
- the inner core 650 may fill the entire lens, so as to reduce or minimize the amount of encapsulant 680 that may be used.
- the encapsulant 680 may have a different thermal expansion coefficient than the mounting substrate 100 and/or the inner core 650 .
- some embodiments of the present invention can form a composite optical element such as a lens using molding or casting techniques.
- injection molding can be used to place a phosphor layer dispersed in the molding material on the inner or outer surface and then completing the molding or casting process in the remaining volume, to form a desired optical element.
- These optical elements can, in some embodiments, convert a blue light emitting diode behind the lens, to create the appearance of white light.
- inventions of the present invention may use the phosphor to evenly disperse the light and/or to disperse the light in a desired pattern.
- conventional light emitting devices may emit light in a “Batwing” radiation pattern, in which greater optical intensity is provided at off-axis angles, such as angles of about 40° off-axis, compared to on-axis (0°) or at the sides (for example, angles greater than about 40°).
- Other light emitting diodes may provide a “Lambertian” radiation pattern, in which the greatest intensity is concentrated in a central area to about 40° off-axis and then rapidly drops off at larger angles.
- Still other conventional devices may provide a side emitting radiation pattern, wherein the greatest light intensity is provided at large angles, such as 90° from the axis, and falls rapidly at smaller angles approaching the axis.
- some embodiments of the present invention can reduce or eliminate angular-dependent radiation patterns of light output from a light emitting device, such as angular dependence of Color Correlated Temperature (CCT).
- CCT Color Correlated Temperature
- light intensity and the x,y chromaticity values/coordinates from all surfaces of the lens can remain relatively constant in some embodiments. This may be advantageous when used for illumination applications, such as a room where a spotlight effect is not desirable.
- Injection molding processes as described above can allow formation of a single optical element with multiple features, such as lensing and white conversion. Additionally, by using a two-molding or casting technique, according to some embodiments, one can shape the phosphor layer to its desired configuration, to reduce or minimize the angular dependence of color temperature with viewing angle.
- a coating including phosphor is provided on the semiconductor light emitting device 150 itself.
- a phosphor for an LED for example to provide solid-state lighting.
- LEDs that are used for solid-state white lighting may produce high radiant flux output at short wavelengths, for example in the range of about 380 nm to about 480 nm.
- One or more phosphors may be provided, wherein the short wavelength, high energy photon output of the LED is used to excite the phosphor, in part or entirely, to thereby down-convert in frequency some or all of the LED's output to create the appearance of white light.
- ultraviolet output from an LED at about 390 nm may be used in conjunction with red, green and blue phosphors, to create the appearance of white light.
- blue light output at about 470 nm from an LED may be used to excite a yellow phosphor, to create the appearance of white light by transmitting some of the 470 nm blue output along with some secondary yellow emission occurring when part of the LEDs output is absorbed by the phosphor.
- Phosphors may be included in a semiconductor light emitting device using many conventional techniques.
- phosphor is coated inside and/or outside the plastic shell of an LED.
- phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition.
- a drop of a material, such as epoxy that contains phosphor therein may be placed inside the plastic shell, on the semiconductor light emitting device and/or between the device and the shell. This technique may be referred to as a “glob top”.
- the phosphor coatings may also incorporate an index matching material and/or a separate index matching material may be provided.
- a light emitting diode that includes a substrate having first and second opposing faces and a sidewall between the first and second opposing faces that extends at an oblique angle from the second face towards the first face.
- a conformal phosphor layer is provided on the oblique sidewall. The oblique sidewall can allow more uniform phosphor coatings than conventional orthogonal sidewalls.
- Semiconductor light emitting devices are fabricated, according to other embodiments of the present invention, by placing a suspension comprising phosphor particles suspended in solvent on at least a portion of a light emitting surface of a semiconductor light emitting device, and evaporating at least some of the solvent to cause the phosphor particles to deposit on at least a portion of the light emitting surface. A coating comprising phosphor particles is thereby formed on at least a portion of the light emitting surface.
- a “suspension” means a two-phase solid-liquid system in which solid particles are mixed with, but undissolved (“suspended”), in liquid (“solvent”).
- a “solution” means a single-phase liquid system in which solid particles are dissolved in liquid (“solvent”).
- FIG. 11A is a cross-sectional view of a semiconductor light emitting device package during an intermediate fabrication step according to various embodiments of the present invention.
- a suspension 1120 including phosphor particles 1122 suspended in solvent 1124 is placed on at least a portion of a light emitting surface 150 a of a semiconductor light emitting device 150 .
- light refers to any radiation, visible and/or invisible (such as ultraviolet) that is emitted by a semiconductor light emitting element 150 .
- At least some of the solvent 1124 is then evaporated, as shown by the arrow linking FIGS.
- the suspension 1120 including phosphor particles 1122 suspended in solvent 1124 is agitated while performing the placing of FIG. 11A and/or while performing the evaporating.
- evaporating can be performed to cause the phosphor particles 122 to uniformly deposit on at least the portion of the light emitting surface 150 a, to thereby form a uniform coating 1130 of the phosphor particles 1122 .
- the phosphor particles 1122 uniformly deposit on all the light emitting surface 150 a.
- substantially all of the solvent 1124 can be evaporated.
- at least about 80% of the solvent can be evaporated.
- substantially all the solvent 1124 is evaporated to cause the phosphor particles 1122 to uniformly deposit on all the light emitting surface 150 a.
- the solvent 1124 comprises Methyl Ethyl Ketone (MEK), alcohol, toluene, Amyl Acetate and/or other conventional solvents.
- the phosphor particles 1122 may be about 3-4 ⁇ m in size, and about 0.2 gm of these phosphor particles 1122 may be mixed into about 5 cc of MEK solvent 1124 , to provide the suspension 1120 .
- the suspension 1120 may be dispensed via an eyedropper pipette, and evaporation may take place at room temperature or at temperatures above or below room temperature, such as at about 60° C. and/or at about 100° C.
- the phosphor particles 1122 may be Cerium-doped Yttrium Aluminum Garnet (YAG:Ce) and/or other conventional phosphors and may be mixed into the solvent 1124 using conventional mixing techniques, to thereby provide the suspension 1120 comprising phosphor particles 1122 .
- the phosphor is configured to convert at least some light that is emitted from the light emitting surface 150 a such that light that emerges from the semiconductor light emitting device appears as white light.
- FIG. 12A is a cross-sectional view of other embodiments of the present invention.
- a mounting substrate 100 is provided, and the semiconductor light emitting element 150 is mounted in a cavity 110 therein.
- Heat sink fins 190 also are provided.
- the suspension 1120 including phosphor particles 1122 suspended in solvent 1124 is placed in the cavity 110 .
- the cavity 110 can be used to confine the suspension 1120 and thereby provide a controlled amount and geometry for the suspension 1120 .
- evaporation is performed, to thereby evaporate at least some of the solvent 1124 to cause the phosphor particles 1122 to deposit on at least a portion of the light emitting surface 150 a, and form a coating 1130 including the phosphor particles 1122 .
- FIGS. 13A and 13B illustrate other embodiments of the present invention.
- the cavity 110 includes a cavity floor 110 b
- the semiconductor light emitting device 150 is mounted on the cavity floor 110 b.
- the semiconductor light emitting device 150 protrudes away from the cavity floor 110 b.
- the light emitting surface 150 a of the semiconductor light emitting device 150 includes a face 150 b that is remote from the cavity floor 110 b, and a sidewall 150 c that extends between the face 150 b and the cavity floor 110 b. As shown in FIG.
- evaporating is performed to evaporate at least some of the solvent 1124 , to cause the phosphor particles 1122 to uniformly deposit on at least a portion of the light emitting surface 150 a and thereby form a coating 1130 of uniform thickness comprising the phosphor particles 1122 .
- the coating may be of uniform thickness on the face 150 b and on the sidewall 150 c.
- the coating 1130 may extend uniformly on the floor 110 b outside the light emitting element 150 . In other embodiments, the coating 1130 also may extend at least partially onto sidewalls 110 a of the cavity 110 .
- a binder may be added to the suspension 1120 so that, upon evaporation, the phosphor particles 1122 and the binder deposit on at least the portion of the light emitting surface 150 a, and form a coating thereon comprising the phosphor particles 1122 and the binder.
- a cellulose material such as ethyl cellulose and/or nitro cellulose, may be used as a binder.
- at least some of the binder may evaporate along with the solvent.
- the suspension 1120 includes the phosphor particles 1122 and light scattering particles suspended, in solvent 1124 , and wherein at least some of the solvent 1124 is evaporated to cause the phosphor particles 1122 and the light scattering particles to deposit on at least a portion of the light emitting device 150 , and form a coating 1130 including the phosphor particles 1122 and the light scattering particles.
- the light scattering particles may include SiO 2 (glass) particles. By selecting the size of the scattering particles, blue light may be effectively scattered to make the emission source (for white applications) more uniform (more specifically, random), in some embodiments.
- FIGS. 11A-13B also may be provided, according to various embodiments of the invention.
- combinations and subcombinations of embodiments of FIGS. 11A-13B with any or all of the other figures also may be provided according to various embodiments of the invention.
- Other embodiments of coating a semiconductor light emitting device by evaporating solvents from a suspension are described in application Ser. No. 10/946,587, filed Sep. 21, 2004, entitled Methods of Coating Semiconductor Light Emitting Elements by Evaporating Solvent From a Suspension, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
- a flexible film that includes an optical element therein on the first metal face, wherein the optical element extends across the cavity.
- the optical element is a lens.
- the optical element may include a phosphor coating and/or may include phosphor dispersed therein.
- FIG. 14 is an exploded cross-sectional view of semiconductor light emitting device packages and assembling methods therefor, according to various embodiments of the present invention.
- these semiconductor light emitting device packages include a solid metal block 100 having a first face 100 a including a cavity 110 therein, and a second face 100 b, including a plurality of heat sink fins 190 therein.
- a flexible film 1420 including therein an optical element 1430 , is provided on the first face 100 a, and a semiconductor light emitting device 150 is provided between the metal block 100 and the flexible film 1120 , and configured to emit light 662 through the optical element.
- An attachment element 1450 may be used to attach the flexible film 1420 and the solid metal block 100 to one another.
- the flexible film 1420 can provide a cover slip that can be made of a flexible material such as a conventional Room Temperature Vulcanizing (RTV) silicone rubber. Other silicone-based and/or flexible materials may be used. By being made of a flexible material, the flexible film 1420 can conform to the solid metal block 100 as it expands and contracts during operations. Moreover, the flexible film 1420 can be made by simple low-cost techniques such as transfer molding, injection molding and/or other conventional techniques that are well known to those having skill in the art.
- RTV Room Temperature Vulcanizing
- the flexible film 1420 includes therein an optical element 1430 .
- the optical element can include a lens, a prism, an optical emission enhancing and/or converting element, such as a phosphor, an optical scattering element and/or other optical element.
- One or more optical elements 1430 also may be provided, as will be described in detail below.
- an optical coupling media 1470 such as an optical coupling gel and/or other index matching material, may be provided between the optical element 1430 and the semiconductor light emitting device 150 , in some embodiments.
- the attachment element 1450 can be embodied as an adhesive that may be placed around the periphery of the solid metal block 100 , around the periphery of the flexible film 1420 and/or at selected portions thereof, such as at the corners thereof.
- the solid metal block 100 may be coined around the flexible film 1420 , to provide an attachment element 1450 .
- Other conventional attaching techniques may be used.
- FIG. 14 also illustrates methods of assembling or packaging semiconductor light emitting devices according to various embodiments of the present invention.
- a semiconductor light emitting element 150 is mounted in a cavity 110 in a first face 100 a of a solid metal block 100 that includes fins 190 on a second face 100 b thereof.
- a flexible film 1420 that includes therein an optical element 1430 is attached to the first face 100 a, for example using an attachment element 1450 , such that, in operation, the semiconductor light emitting device 150 emits light 662 through the optical element 1430 .
- an optical coupling media 1470 is placed between the semiconductor light emitting device 150 and the optical element 1430 .
- FIG. 15 is a cross-sectional view of packaged semiconductor light emitting devices of FIG. 14 , according to other embodiments of the present invention.
- the flexible film 1420 extends onto the face 100 a beyond the cavity 110 .
- the optical element 1430 overlies the cavity 110 , and the semiconductor light emitting device 150 is in the cavity 110 , and is configured to emit light 662 through the optical element 1430 .
- the optical element 1430 includes a concave lens.
- an optical coupling media 1470 is provided in the cavity 110 between the optical element 1430 and the semiconductor light emitting device 150 .
- the optical coupling media 1470 fills the cavity 110 .
- FIG. 16 is a cross-sectional view of other embodiments of the present invention.
- two optical elements 1430 and 1630 are included in the flexible film 1420 .
- a first optical element 1430 includes a lens and a second optical element 1630 includes a prism.
- Light from the semiconductor light emitting device 150 passes through the prism 1630 and through the lens 1430 .
- An optical coupling media 1470 also may be provided. In some embodiments, the optical coupling media 1470 fills the cavity 110 .
- the optical coupling media 1470 may have a sufficient difference in index of refraction from the prism 1630 such that the prism 1630 can reduce shadowing. As shown in FIG.
- the semiconductor light emitting device 150 includes a wire 1650 that extends towards the flexible film 1420 , and the prism 1630 is configured to reduce shadowing by the wire 1650 of the light that is emitted from the semiconductor light emitting device 150 . More uniform light emissions thereby may be provided, with reduced shadowing of the wire 1650 .
- wire is used herein in a generic sense to encompass any electrical connection for the semiconductor light emitting device 150 .
- FIG. 17 is a cross-sectional view of other embodiments of the present invention.
- phosphor 1710 is provided on the flexible film 1320 between the lens 1430 and the semiconductor light emitting device 150 .
- the phosphor 410 can include cerium-doped Yttrium Aluminum Garnet (YAG) and/or other conventional phosphors.
- the phosphor comprises Cerium doped Yttrium Aluminum Garnet (YAG:Ce).
- nano-phosphors may be used. Phosphors are well known to those having skill in the art and need not be described further herein.
- An optical coupling media 1470 also may be provided that may fill the cavity 110 .
- FIG. 18 illustrates yet other embodiments of the present invention.
- the lens 1430 includes a concave inner surface 1430 a adjacent the semiconductor light emitting device 150
- the phosphor 1710 includes a conformal phosphor layer on the concave inner surface 1430 a.
- An optical coupling media 1470 also may be provided that may fill the cavity 110 .
- FIG. 19 is a cross-sectional view of other embodiments. As shown in FIG. 19 , at least a portion 1420 d of the flexible film 1420 that overlies the cavity 110 is transparent to the light. Moreover, at least a portion 1420 c of the flexible film 1420 that extends onto the face 100 a beyond the cavity 110 is opaque to the light, as shown by the dotted portions 1420 c of the flexible film 1420 . The opaque regions 1420 c can reduce or prevent bouncing of light rays, and thereby potentially produce a more desirable light pattern. An optical coupling media 1470 also may be provided that may fill the cavity 110 .
- FIG. 20 is a cross-sectional view of other embodiments of the present invention wherein the flexible film 1420 may be fabricated of multiple materials. As shown in FIG. 20 , at least a portion 1420 d of the flexible film 1420 that overlies the cavity 110 includes a first material, and at least a portion 1420 c of the flexible film 1420 that extends onto the face 100 a beyond the cavity 110 includes a second material. Two or more materials may be used in the flexible film 1420 in some embodiments, to provide different characteristics for the portion of the flexible film 1420 through which light is emitted and through which light is not emitted. Multiple materials may be used for other purposes in other embodiments. For example, an inflexible and/or flexible plastic lens may be attached to a flexible film.
- Such a flexible film 1420 with multiple materials may be fabricated using conventional multiple molding techniques, for example.
- the first material that is molded may not be fully cured, so as to provide a satisfactory bond that attaches to the second material that is subsequently molded.
- the same material may be used for the optical element and the flexible film, wherein the optical element is formed and then the flexible film is formed surrounding the optical element.
- An optical coupling media 1470 also may be provided that may fill the cavity 110 .
- FIG. 21 is a cross-sectional view of other embodiments of the present invention.
- the semiconductor light emitting element 150 includes a wire 1650 , that extends towards and contacts the flexible film 1420 in the cavity 110 .
- the flexible film 1420 includes a transparent conductor 2110 which can include Indium Tin Oxide (ITO) and/or other conventional transparent conductors.
- ITO Indium Tin Oxide
- the transparent conductor 2110 extends in the cavity 110 and electrically connects to the wire. Reduced shadowing-by the wire 1650 thereby may be provided. Moreover, a wire bond to the metal block 100 , and the potential consequent light distortion, may be reduced or eliminated.
- An optical coupling media 1470 also may be provided that may fill the cavity 110 .
- FIG. 22 is a cross-sectional view of other embodiments of the present invention.
- the optical element 1430 includes a lens that overlies the cavity 110 and protrudes away from the cavity 110 .
- the flexible film 1420 further includes a protruding element 2230 between the lens 1430 and the light emitting element 150 that protrudes towards the cavity 110 .
- a conformal phosphor layer 1710 is provided on the protruding element 2230 .
- optical coupling media 1470 in the device may be displaced. Arrangements of FIG. 22 may thus provide more uniform phosphor coating at desired distances from the light emitting element 150 , so as to provide more uniform illumination.
- the optical coupling media 1470 may fill the cavity 110 .
- FIGS. 23 and 24 illustrate packages including multiple semiconductor light emitting devices and/or multiple optical elements according to various embodiments of the present invention.
- the optical element 1430 is a first optical element
- the semiconductor light emitting device 150 is a first semiconductor light emitting device.
- the flexible film 1420 also includes therein a second optical element 1430 ′ that is spaced apart from the first optical element 1430 , and the device further includes a second semiconductor light emitting device 150 ′ between the substrate 100 and the flexible film 1420 , and configured to emit light through the second optical element 1430 ′.
- a third optical element 1430 ′′ and a third semiconductor light emitting device 150 ′′ also may be provided.
- the optical elements 1430 , 1430 ′ and 1430 ′′ may be the same and/or different from one another, and the semiconductor light emitting devices 150 , 150 ′ and 150 ′′ may be the same and/or different from one another.
- the cavity 110 is a first cavity, and second and third cavities 110 ′, 110 ′′, respectively, are provided for the second and third semiconductor light emitting devices 150 ′, 150 ′′, respectively.
- the cavities 110 , 110 ′ and 110 ′′ may be the same and/or may have different configurations from one another.
- An optical coupling media 1470 also may be provided that may fill the cavity or cavities. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments.
- the phosphor 1710 may be a first phosphor layer, and second and/or third phosphor layers 1710 ′ and 1710 ′′, respectively, may be provided on the flexible film 1420 between the second optical element 1430 ′ and the second semiconductor light emitting device 150 ′, and between the third optical element 1430 ′ and the third semiconductor light emitting device 150 ′′, respectively.
- the phosphor layers 1710 , 1710 ′, 1710 ′′ may be the same, may be different and/or may be eliminated.
- the first phosphor layer 1710 and the first semiconductor light emitting device 150 are configured to generate red light
- the second phosphor layer 1710 ′ and the second semiconductor light emitting device 150 ′ are configured to generate blue light
- the third phosphor layer 1710 ′′ and the third semiconductor light emitting device 150 ′′ are configured to generate green light.
- a Red, Green, Blue (RGB) light emitting element that can emit white light thereby may be provided in some embodiments.
- FIG. 24 is a cross-sectional view of other embodiments of the present invention.
- a single cavity 2400 is provided for the first, second and third semiconductor light emitting devices 150 , 150 ′ and 150 ′′, respectively.
- An optical coupling media 1470 also may be provided that may fill the cavity 2400 . It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments.
- FIG. 25 is a cross-sectional view of yet other embodiments of the present invention.
- the optical element 2530 comprises a lens having phosphor dispersed therein. Many embodiments of lenses including phosphor dispersed therein were described above and need not be repeated.
- an optical scattering element may be embedded in the lens as shown in FIG. 25 , and/or provided as a separating layer as shown, for example, in FIG. 22 , in addition or instead of phosphor.
- FIG. 26 is a perspective view of a semiconductor light emitting device package according to other embodiments of the present invention.
- FIGS. 14-26 It will be understood by those having skill in the art that various embodiments of the invention have been described individually in connection with FIGS. 14-26 . However, combinations and subcombinations of the embodiments of FIGS. 14-26 may be provided according to various embodiments of the present invention, and also may be combined with embodiments according to any of the other figures described herein.
- FIG. 27 is a cross-sectional view of a semiconductor light emitting device package according to various embodiments of the present invention.
- a solid metal block 100 includes a plurality of cavities 110 in a first metal face 100 a thereof, and a plurality of heat sink fins 190 in a second metal face 100 b thereof.
- An insulating layer 120 is provided on the first metal face 100 a.
- a conductive layer 130 is provided on the insulating layer, and is patterned to provide a reflective coating 2730 a in the cavity 110 , and first 2730 b and second 2730 c conductive traces in the cavity 110 that are configured to connect to at least one semiconductor light emitting device 150 that is mounted in the cavity.
- FIG. 1 is a cross-sectional view of a semiconductor light emitting device package according to various embodiments of the present invention.
- a solid metal block 100 includes a plurality of cavities 110 in a first metal face 100 a thereof, and a plurality of heat sink fins 190 in a second metal face
- the traces can provide series connection between the semiconductor light emitting devices.
- parallel and/or series/parallel or anti-parallel connections also may be provided. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments.
- Various embodiments of flexible films 1420 and optical elements 1430 may be provided as was described extensively above.
- phosphor may be integrated as was described extensively above.
- discrete lenses 170 also may be provided, instead of the flexible film 1420 containing optical elements 1430 .
- the conductor 130 is connected to an integrated circuit 2710 , such as the light emitting device driver integrated circuit, on the solid metal block 110 .
- a semiconductor light emitting package of FIG. 27 can be configured to provide a plug-in substitute for a conventional light bulb.
- FIG. 28 is a perspective view of embodiments according to FIG. 27 .
- an array of cavities 110 that are connected by a conductive layer 130 may be provided on the first face 100 a of a solid metal block 100 .
- a uniformly spaced 10 ⁇ 10 array of cavities and a corresponding 10 ⁇ 10 array of optical elements 1430 on a flexible film 1420 is shown.
- larger or smaller arrays may be provided and the arrays may be circular, randomly spaced and/or of other configuration.
- nonuniform spacing may be provided in some or all portions of the array of cavities 110 and optical elements 1430 . More specifically, uniform spacing may promote uniform light output, whereas nonuniform spacing may be provided to compensate for variations in heat dissipation abilities of the heat sink fins 190 across various portions of the solid metal block 100 .
- FIGS. 27 and 28 may be combined in various combinations and subcombinations with any of the other embodiments described herein.
- FIG. 29 is a side cross-sectional view of other embodiments of the present invention.
- the first metal face 100 a further includes a plurality of pedestals 2900 therein, and a respective one of the plurality of cavities 110 is in a respective one of the plurality of pedestals 2900 .
- the insulating layer 120 and conductive layer 130 are not illustrated in FIG. 29 for the sake of clarity. Multiple cavities 110 also may be provided in a given pedestal 2900 in other embodiments.
- the flexible film 1420 ′ includes a plurality of optical elements 1430 ′, such as lenses, a respective one of which extends across a respective pedestal 2900 and across a respective cavity 110 . It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments.
- the light emitting devices 150 may be placed closer to the radial center of the optical elements 1430 ′, to thereby allow the uniformity of emissions to be enhanced.
- embodiments of FIG. 29 may be provided with discrete optical elements, such as lenses, a respective one of which spans across a respective pedestal 2900 and cavity 110 , and that embodiments of FIG. 29 may be combined with any combination or subcombination of the other embodiments that were described above.
- FIG. 30 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention. Methods of FIG. 30 may be used to package one or more semiconductor light emitting devices, to provide structures that were described in any of the preceding figures.
- a solid metal block including cavities and heat sink fins is fabricated, as was described extensively above.
- An insulating layer is formed on at least a portion of the solid metal block, for example on the first metal face thereof, at Block 3020 , as was described extensively above.
- a conductive layer is formed on the insulating layer. The conductive layer may be patterned to provide a reflective coating in the cavities, and first and second conductive traces on the first face that extend into the cavities, as was described extensively above.
- at least one semiconductor light emitting device is mounted in a respective cavity, and electrically connected to the first and second conductive traces in the respective cavity, as was described extensively above.
- an optical coupling medium may be added, as was described above.
- a lens, optical element and/or flexible film is placed on the first face, as was described extensively above.
- through holes, reflector layers and/or other structures that were described extensively above, also may be provided.
- Embodiments of the present invention can provide a three-dimensional topside and backside topology on solid metal blocks, to thereby provide integral reflector cavities and integral heat sinks all in one piece.
- the integrated optical cavities may facilitate alignment and ease of manufacturing.
- the integral heat sink may enhance thermal efficiency.
- a three-dimensional topside topology to form reflectors for the LEDs, the need to individually package the LEDs, mount the package to a heat sink and add the desired drive electronics may be eliminated, according to some embodiments of the present invention.
- a “chip on integral reflector heat sink” may be provided as a single component. High optical efficiency and high thermal efficiency thereby may be provided.
- Adding the drive circuitry can provide a complete solution for a functional luminary that may only need a source voltage and a final luminary housing.
- Any shape or density device may be provided.
- a high density embodiment may have four high power LEDs such as are marketed under the designation XB900 by. Cree, Inc., the assignee of the present invention, to provide a 2 ⁇ 2 array, while a distributed thermal approach may have 100 lower power LEDs, such as are marketed under the designation XB290 by Cree, Inc., the assignee of the present invention, to provide a 10 ⁇ 10 array, to achieve the same lumen output.
- the XB900 and XB290 devices are described in a product brochure entitled Cree Optoelectronics LED Product Line, Publication CPR3AX, Rev. D, 2001-2002.
- Other devices that are described in this product brochure, such as XT290, XT230 and/or other devices from other manufacturers also may be used.
- the optical cavities may be either recessed or may be provided as optical cavities in pedestals.
- the conductive layer can provide die-attach pads and wire bond pads. Separate traces may be provided for red, green or blue LEDs, or all the LEDs may be connected in series or in parallel.
- Embodiments of the present invention can provide a configuration that may be able to replace a standard MR16 or other light fixture.
- 6.4 watts input may provide about 2.4 watts of optical power and 4 watts of heat dissipation.
Abstract
A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes a cavity that is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. The second metal face includes heat sink fins therein. One or more semiconductor light emitting devices are mounted in the cavity. Reflective coatings, conductive traces, insulating layers, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media also may be provided in the package. Related packaging methods also may be provided.
Description
- This invention relates to semiconductor light emitting devices and manufacturing methods therefor, and more particularly to packaging and packaging methods for semiconductor light emitting devices.
- Semiconductor light emitting devices, such as Light Emitting Diodes (LEDs) or laser diodes, are widely used for many applications. As is well known to those having skill in the art, a semiconductor light emitting device includes one or more semiconductor layers that are configured to emit coherent and/or incoherent light upon energization thereof. It is also known that the semiconductor light emitting device generally is packaged to provide external electrical connections, heat sinking, lenses or waveguides, environmental protection and/or other functions.
- For example, it is known to provide a two-piece package for a semiconductor light emitting device, wherein the semiconductor light emitting device is mounted on a substrate that comprises alumina, aluminum nitride and/or other materials, which include electrical traces thereon, to provide external connections for the semiconductor light emitting device. A second substrate which may comprise silver plated copper, is mounted on the first substrate, for example using glue, surrounding the semiconductor light emitting device. A lens may be placed on the second substrate over the semiconductor light emitting device. Light emitting diodes with two-piece packages as described above are described in Application Serial No. US 2004/0041222 A1 to Loh, entitled Power Surface Mount Light Emitting Die Package, published Mar. 4, 2004, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
- Some embodiments of the present invention provide a mounting substrate for a semiconductor light emitting device that includes a solid metal block having first and second opposing metal faces. The first metal face includes therein a cavity that is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity. The second metal face includes therein a plurality of heat sink fins.
- In some embodiments, a reflective coating is provided in the cavity. In other embodiments, first and second conductive traces are provided in the cavity that are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity. In yet other embodiments, an insulating layer is provided on the first metal face, and a conductive layer is provided on the insulating layer that is patterned to provide the reflective coating in the cavity and the first and second conductive traces in the cavity. The solid metal block can be a solid aluminum block with an aluminum oxide insulating layer. In other embodiments, the solid metal block is a solid steel block with a ceramic insulating layer.
- In still other embodiments of the invention, the first metal face includes a pedestal therein, and the cavity is in the pedestal. In yet other embodiments, the solid metal block includes a through hole therein that extends from the first face to the second face. The through hole includes a conductive via therein that is electrically connected to the first or second conductive traces.
- In some embodiments of the present invention, a semiconductor light emitting device is mounted in the cavity. In other embodiments, a lens extends across the cavity. In still other embodiments, when the cavity is in a pedestal, the lens extends across the pedestal and across the cavity. In still other embodiments, a flexible film that includes an optical element therein is provided on the first metal face, wherein the optical element extends across the cavity or extends across the pedestal and across the cavity. Accordingly, semiconductor light emitting device packages may be provided.
- Phosphor also may also be provided according to various elements of the present invention. In some embodiments, a coating including phosphor is provided on the inner and/or outer surface of the lens or optical element. In other embodiments, the lens or optical element includes phosphor dispersed therein. In yet other embodiments, a phosphor coating is provided on the semiconductor light emitting device itself. Combinations of these embodiments also may be provided.
- An integrated circuit also may be provided on the solid metal block that is electrically connected to the first and second traces. The integrated circuit may be a light emitting device driver integrated circuit. Finally, an optical coupling medium may be provided in the cavity and at least partially surrounding the light emitting device.
- Other embodiments of the present invention provide a mounting substrate for an array of semiconductor light emitting devices. In these embodiments, the first metal face includes therein a plurality of cavities, a respective one of which is configured to mount at least one semiconductor light emitting device therein, and to reflect light that is emitted by the at least one semiconductor light emitting device that is mounted therein away from the respective cavity. The second metal face includes a plurality of heat sink fins. A reflective coating, conductive traces, an insulating layer, pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media also may be provided according to any of the embodiments that were described above, to provide semiconductor light emitting device packages. Moreover, the cavities may be uniformly and/or nonuniformly spaced apart from one another in the first face.
- Semiconductor light emitting devices may be packaged according to some embodiments of the present invention by fabricating a solid metal block including one or more cavities in a first face thereof and a plurality of heat sink fins in a second face thereof, forming an insulating layer on the first face, forming a conductive layer and mounting a semiconductor light emitting device in at least one of the cavities. Pedestals, through holes, lenses, flexible films, optical elements, phosphor, integrated circuits and/or optical coupling media may be provided according to any of the embodiments that were described above.
-
FIGS. 1A-1H are side cross-sectional views of mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention. -
FIG. 2 is a flowchart of steps that may be performed to fabricate mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention. -
FIGS. 3A and 3B are top and bottom perspective views of a semiconductor light emitting device package according to various embodiments of the present invention. -
FIG. 4 is an exploded perspective view of a packaged semiconductor light emitting device according to various embodiments of the present invention. -
FIG. 5 is an assembled perspective view of a packaged semiconductor light emitting device according to various embodiments of the present invention. -
FIGS. 6A-6H are cross-sectional views of transmissive optical elements according to various embodiments of the present invention that may be used with semiconductor light emitting devices. -
FIG. 7 is a cross-sectional view of a semiconductor light emitting device package according to other embodiments of the present invention. -
FIG. 8 is a schematic diagram of a molding apparatus that may be used to fabricate optical elements according to embodiments of the present invention. -
FIGS. 9 and 10 are flowcharts of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention. -
FIGS. 11A and 11B , 12A and 12B, and 13A and 13B are cross-sectional views of semiconductor light emitting device packages during intermediate fabrication steps according to various embodiments of the present invention. -
FIG. 14 is an exploded cross-sectional view of a semiconductor light emitting device package and fabrication methods therefor, according to various embodiments of the present invention. -
FIGS. 15-25 are cross-sectional views of semiconductor light emitting device packages according to various embodiments of the present invention. -
FIG. 26 is a perspective view of a semiconductor light emitting device package according to various embodiments of the present invention. -
FIG. 27 is a side cross-sectional view of a packaged semiconductor light emitting device according to various embodiments of the present invention. -
FIG. 28 is a perspective view ofFIG. 27 . -
FIG. 29 is a side cross-sectional view of a packaged semiconductor light emitting device according to other embodiments of the present invention. -
FIG. 30 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention. - The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. As used herein the term “and/or” includes any and all combinations of one or more of the associated listed items and may be abbreviated as “/”.
- The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, regions, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, elements, components, and/or groups thereof.
- It will be understood that when an element such as a layer or region is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
- It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
- Furthermore, relative terms, such as “lower”, “base”, or “horizontal”, and “upper”, “top”, or “vertical” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below.
- Embodiments of the present invention are described herein with reference to cross section illustrations that are schematic illustrations of idealized-embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated, typically, may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present invention.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
-
FIGS. 1A-1H are side cross-sectional views of mounting substrates for semiconductor light emitting devices according to various embodiments of the present invention. Referring toFIG. 1A , mounting substrates for semiconductor light emitting devices according to various embodiments of the invention include asolid metal block 100 having acavity 110 in afirst metal face 100 a thereof, that is configured to mount a semiconductor light emitting device therein, and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from thecavity 110. In some embodiments, thesolid metal block 100 is a solid aluminum block or a solid steel block. Thecavity 110 may be formed by machining, coining, etching and/or other conventional techniques. The size and shape of thecavity 110 may be configured to enhance or optimize the amount and/or direction of light that is reflected away from thecavity 110 from a semiconductor light emitting device that is mounted in thecavity 110. For example,oblique sidewalls 110 a and or a semi-ellipsoidal cross-sectional profile may be provided, so as to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from thecavity 110. An additional reflective layer also may be provided on the cavity sidewall and/or floor, as will be described below. - Still referring to
FIG. 1A , thesecond metal face 100 b of thesolid metal block 100 includes a plurality ofheat sink fins 190 therein. The number, spacing and/or geometry of theheat sink fins 190 may be varied for desired heat dissipation, as is well known to those having skill in the art. Moreover, the heat sink fins need not be uniformly spaced, need not be straight, need not be rectangular in cross-section, and can be provided in a one-dimensional elongated array and/or in a two-dimensional array of heat sink fin posts using techniques that are well known to those having skill in the art. Each fin may itself include one or more projecting fins thereon. In some embodiments, themetal block 100 may be a rectangular solid metal block of aluminum or steel about 6 mm×about 9 mm, and about 2 mm thick, and thecavity 110 may be about 1.2 mm deep with a circular floor that is about 2.5 mm in diameter, withsidewalls 110 a that are of any simple or complex shape to obtain desired radiation patterns. However, theblock 100 may have other polygonal and/or ellipsoidal shapes. Moreover, in some embodiments, an array of 12heat sink fins 190 may be provided, wherein the heat sink fins have a width of 2 mm, a pitch of 5 mm and a depth of 9 mm. However, many other configurations ofheat sink fins 190 may be provided. For example, many heat sink design profiles may be found on the Web at aavid.com. -
FIG. 1B illustrates mounting substrates according to other embodiments of the present invention. As shown inFIG. 1B , an electrically insulatingcoating 120 is provided on the surface of thesolid metal block 100. The insulatingcoating 120 may be provided on the entire exposed surface of the solid metal block, including theheat sink fins 190, or excluding theheat sink fins 190 as shown inFIG. 1B , or on only a smaller portion of the exposed surface of the solid metal block. In some embodiments, as will be described below, the insulatingcoating 120 includes a thin layer of aluminum oxide (A2O3) that may be formed, for example, by anodic oxidation of thesolid metal block 100 in embodiments where thesolid metal block 100 is aluminum. In other embodiments, the insulatingcoating 120 includes a ceramic coating on asolid steel block 100. In some embodiments, thecoating 120 is sufficiently thick to provide an electrical insulator, but is maintained sufficiently thin so as not to unduly increase the thermal conductive path therethrough. - Solid metal blocks 100 of aluminum including thin
insulating coatings 120 of aluminum oxide may be provided using substrates that are marketed by the IRC Advanced Film Division of TT Electronics, Corpus Christi, Tex., under the designation Anotherm™, that are described, for example, in brochures entitled Thick Film Application Specific Capabilities and Insulated Aluminum Substrates, 2002, both of which are available on the Web at irctt.com. Moreover,solid metal blocks 100 of steel with an insulatingcoating 120 of ceramic may be provided using substrates that are marketed by Heatron Inc., Leavenworth, Kans., under the designation ELPOR°, that are described, for example, in a brochure entitled Metal Core PCBs for LED Light Engines, available on the Web at heatron.com.Cavities 110 andheat sink fins 190 may be provided in these solid metal blocks according to any of the embodiments described herein. Othersolid metal blocks 100 with insulatingcoatings 120 may be provided with at least onecavity 110 in afirst metal face 100 a thereof, and a plurality ofheat sink fins 190 in asecond metal face 100 b thereof in other embodiments of the present invention. - Referring now to
FIG. 1C , first and second spaced apartconductive traces coating 120 in thecavity 110. The first and second spaced apartconductive traces cavity 110. As shown inFIG. 1C , in some embodiments, the first and second spaced apartconductive traces cavity 110 onto thefirst face 100 a of thesolid metal block 100. When the insulatingcoating 120 is provided on only a portion of thesolid metal block 100, it may be provided between the first and second spaced apart traces 130 a and 130 b and thesolid metal block 100, to thereby insulate the first and second metal traces 130 a and 130 b from thesolid metal block 100. -
FIG. 1D illustrates other embodiments of the present invention wherein the first and second spaced apartconductive traces 130 a′, 130 b′ extend from thecavity 110 to thefirst face 100 a around at least oneside 100 c of the metal block and onto asecond face 100 b of the metal block that is opposite thefirst face 110 a. Thus, backside contacts may be provided. - In some embodiments of the invention, the first and second spaced apart
conductive traces layer 120 that is patterned to provide a reflective coating in thecavity 110 and first and secondconductive traces cavity 110. - In other embodiments, as shown in
FIG. 1 E , one or more separatereflective layers conductive traces 130 a′, 130 b′ and/or in thecavity 110. In these embodiments, the conductive traces 130 a′, 130 b′ may comprise copper, and thereflective layers FIGS. 1C and/or 1D, the conductive traces may comprise silver to provide an integral reflector. - In still other embodiments, a separate reflector layer need not be provided. Rather, the surface of the
cavity 110 including thesidewall 110 a may provide sufficient reflectance. Thus, thecavity 110 is configured geometrically to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein, for example, by providing oblique sidewall(s) 110 a, reflective oblique sidewall(s) 110 a and/or areflective coating 132 a and/or 132 b on the oblique sidewall(s) 110 a and/or on the floor of thecavity 110, such that the dimensions and/or sidewall geometry of the cavity act to reflect light that is emitted by at least one semiconductor light emitting device that is mounted in thecavity 110, away from thecavity 110. Reflection may be provided or enhanced by the addition of areflective coating 132 a and/or 132 b in thecavity 110. - In still other embodiments of the present invention, as illustrated in
FIG. 1F , backside contacts may be provided by providing first and/or second throughholes 140 a and/or 140 b, which may be formed in thesolid metal block 100 by machining, etching and/or other conventional techniques. Moreover, as shown inFIG. 1F , the insulatingcoating 120 extends into the throughholes conductive vias holes solid metal block 100 by the insulatingcoating 120 in throughholes - In
FIG. 1F , the throughholes conductive vias cavity 110 to thesecond face 100 b. The throughholes second faces conductive traces 130 a′, 130 b′ may be provided in thecavity 110, and electrically connected to the respective first and secondconductive vias second face 100 b, third and fourth spaced apartconductive traces conductive vias conductive traces second face 100 b, to facilitate circuit board assembly. Solder mask layers are well known to those having skill in the art and need not be described further herein. As shown inFIG. 1F ,heat sink fins 190 may be provided in the center and/or at the edges of thesolid metal block 100, i.e., adjacent thecavity 110 and/or offset from thecavity 110. - In embodiments of
FIG. 1F , the first and second throughholes conductive vias cavity 110 to thesecond face 100 b. In embodiments ofFIG. 1G , the first and second throughholes 140 a′, 140 b′ and the first and secondconductive vias 142 a′, 142 b′ extend from thefirst face 100 a outside thecavity 110 to thesecond face 100 b. The throughholes 140 a′, 140 b′ may be orthogonal and/or oblique to the first andsecond faces conductive traces 130 a″, 130 b″ extend from thecavity 110 to the respective first and secondconductive vias 142 a′, 142 b′ on thefirst face 100 a. Third andfourth traces 130 c′, 130 d′ are provided on thesecond face 100 b that electrically connect to the respective first and second conductive via 142 a′, 142 b′. As shown inFIG. 1G ,heat sink fins 190 may be provided in the center and/or at the edges of thesolid metal block 100, i.e., adjacent thecavity 110 and/or offset from thecavity 110. -
FIG. 1H illustrates embodiments of the invention that were described in connection withFIG. 1D , and which further include a semiconductorlight emitting device 150 that is mounted in the cavity and that is connected to the first and second spaced apartelectrical traces 130 a′, 130 b′. Moreover,FIG. 1H illustrates that in other embodiments, alens 170 extends across the cavity. In still other embodiments, anencapsulant 160 is provided between the semiconductorlight emitting device 150 and thelens 170. Theencapsulant 160 may comprise clear epoxy and can enhance optical coupling from the semiconductorlight emitting device 150 to thelens 170. Theencapsulant 160 also may be referred to herein as an optical coupling media. In some embodiments, alens retainer 180 is provided on thesolid metal block 100, to hold thelens 170 across thecavity 110. In other embodiments, thelens retainer 180 may not be used. - The semiconductor
light emitting device 150 can comprise a light emitting diode, laser diode and/or other device which may include one or more semiconductor layers, which may comprise silicon, silicon carbide, gallium nitride and/or other semiconductor materials, a substrate which may comprise sapphire, silicon, silicon carbide, gallium nitride or other microelectronic substrates, and one or more contact layers which may comprise metal and/or other conductive layers. The design and fabrication of semiconductor light emitting devices are well known to those having skill in the art. - For example, the
light emitting device 150 may be gallium nitride based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham, N.C. For example, the present invention may be suitable for use with LEDs and/or lasers as described in U.S. Pat. Nos. 6,201,262, 6,187,606, 6,120,600, 5,912,477, 5,739,554, 5,631,190, 5,604,135, 5,523,589, 5,416,342, 5,393,993, 5,338,944, 5,210,051, 5,027,168, 5,027,168, 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference as if set forth fully herein. Other suitable LEDs and/or lasers are described in published U.S. Patent Publication No. US 2003/0006418 A1 entitled Group III Nitride Based Light Emitting Diode Structures With a Quantum Well and Superlattice, Group III Nitride Based Quantum Well Structures and Group III Nitride Based Superlattice Structures, published Jan. 9, 2003, as well as published U.S. Patent Publication No. US 2002/0123164 A1 entitled Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor. Furthermore, phosphor coated LEDs, such as those described in United States Patent Application No. US 2004/0056260 A1, published on Mar. 25, 2004, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods Therefor, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in embodiments of the present invention. - The LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate. In such embodiments, the substrate may be patterned so as to enhance light output of the devices as is described, for example, in the above-cited U.S. Patent Publication No. US 2002/0123164 A1.
- It will be understood by those having skill in the art that, although the embodiments of
FIGS. 1A-1H have been illustrated as separate embodiments, various elements ofFIGS. 1A-1H may be used together to provide various combinations and/or subcombinations of elements. Thus, for example, thereflective layer light emitting device 150,lens 170,encapsulant 160 and/or thelens retainer 180 may be used in any of the embodiments shown. Accordingly, the present invention should not be limited to the separate embodiments that are shown inFIGS. 1A-1H . -
FIG. 2 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention. Referring toFIG. 2 , as shown atBlock 210, a solid block, such as an aluminum orsteel block 100 ofFIGS. 1A-1H , is provided including a cavity, such ascavity 110, in a face thereof, that is configured to mount a semiconductor light emitting device therein and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from thecavity 110. Theblock 100 also includes therein a plurality ofheat sink fins 190 on thesecond face 100 b thereof. As was described above, the cavity may be provided by machining, coining, etching and/or other conventional techniques. Theheat sink fins 190 may also be provided by these and/or other techniques. Moreover, in other embodiments, the solid metal block may also contain the first and second spaced apart through holes such as throughholes - Referring again to
FIG. 2 , atBlock 220, an insulating coating is formed on at least some of the surface of the solid metal block. In some embodiments, a solid aluminum block is oxidized. In other embodiments, a ceramic coating is provided on a solid steel block. Other insulating coatings and other solid metal blocks may be provided. In some embodiments, the entire exposed surface of the solid metal block is coated. Moreover, when through holes are provided, the inner surfaces of the through holes also may be coated. In other embodiments, only portions of the metal block are coated, for example, by providing a masking layer on those portions which are desired not to be coated. Oxidization of aluminum is well known to those having skill in the art and may be performed, for example, using an anodic oxidation processes and/or other oxidation processes, to provide a thin layer of Al2O3 on the aluminum. Ceramic coatings on steel are also well known to those having skill in the art and need not be described further herein. - Still referring to
FIG. 2 , atBlock 230, first and second spaced apart conductive traces, such astraces vias - Finally, at
Block 240, other operations are performed to mount the semiconductor device, lens, flexible film encapsulant and/or retainer on the substrate, as described herein. It also will be noted that in some alternate implementations, the functions/acts noted in the blocks ofFIG. 2 may occur out of the order noted in the flowchart. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. -
FIGS. 3A and 3B are top and bottom perspective views, respectively, of packages according to embodiments of the present invention, which may correspond to the cross-sectional view ofFIG. 1D .FIGS. 3A and 3B illustrate thesolid metal block 100, thecavity 110, thefins 190, the first and second spaced apartconductive traces 130 a′, 130 b′ that wrap around the solid metal block, and the semiconductorlight emitting device 150 mounted in thecavity 110. The insulatingcoating 120 may be transparent and is not shown. A second insulating layer and/or solder mask may be provided on the first and/or second spaced apart conductive traces in these and/or any other embodiments. -
FIG. 4 illustrates an exploded perspective view of other embodiments of the present invention, which may correspond toFIG. 1H . As shown inFIG. 4 , thesolid metal block 100 includes acavity 110 therein, and a plurality of spaced apart electrical traces thereon. InFIG. 4 , the firstelectrical trace 130 a′ is shown. However, rather than a single second electrical trace, a plurality of secondelectrical traces 330 a′, 330 b′ and 330 c′ may be provided to connect to a plurality of semiconductorlight emitting devices 150′ that may be mounted in thecavity 110 to provide, for example, red, green and blue semiconductor light emitting devices for a white light source. Theencapsulant 160 andlens retainer 180 are shown. Other configurations oflens retainers 180 can provide a ridge and/or other conventional mounting means for mounting alens 170 on thesolid metal block 100. It also will be understood that an epoxy or other glue may be used in alens retainer 180. Thelens retainer 180 may also provide additional top heat sinking capabilities in some embodiments of the present invention.FIG. 5 illustrates the assembled package ofFIG. 4 . - Accordingly, some embodiments of the present invention use a solid metal block as a mounting substrate for a semiconductor light emitting device and include one or more integral cavities and a plurality of integral heat sink fins. Aluminum or steel have sufficient thermal conductivity to be used as an effective heat sink when integral fins are provided. Additionally, the cost of the material and the cost of fabrication can be low. Moreover, the ability to grow high quality insulating oxides and/or provide ceramic coatings allows the desired electrical traces to be formed without a severe impact on the thermal resistance, since the thickness of the anodic oxidation or other coating can be precisely controlled. This insulating layer also can be selectively patterned, which can allow the addition of another plated metal to the substrate, such as plating silver on the cavity sidewalls only, for increased optical performance.
- The ability to form an optical cavity and heat sink fins in the solid metal block, rather than a separate reflector cup and a separate heat sink, can reduce the assembly cost, since the total number of elements for the package can be reduced. Additionally, the fact that the reflector (cavity) position is fixed with respect to the solid metal block can also reduce the assembly complexity. Finally, the integral heat sink fins can enhance thermal efficiency. Embodiments of the invention may be particularly useful for high power semiconductor light emitting devices such as high power LEDs and/or laser diodes.
- Other embodiments of solid metal block mounting substrates that may be used according to embodiments of the present invention are described in application Ser. No. 10/659,108, filed Sep. 9, 2003, entitled Solid Metal Block Mounting Substrates for Semiconductor Light Emitting Devices, and Oxidizing Methods For Fabricating Same, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein.
- It is often desirable to incorporate a phosphor into the light emitting device, to enhance the emitted radiation in a particular frequency band and/or to convert at least some of the radiation to another frequency band. Phosphors may be included in a light emitting device using many conventional techniques. In one technique, phosphor is coated inside and/or outside a plastic shell of the device. In other techniques, phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition. In still other embodiments, a drop of a material such as epoxy that contains phosphor therein may be placed inside the plastic shell, on the semiconductor light emitting device and/or between the device and the shell. LEDs that employ phosphor coatings are described, for example, in U.S. Pat. Nos. 6,252,254; 6,069,440; 5,858,278; 5,813,753; 5,277,840; and 5,959,316.
- Some embodiments of the present invention that will now be described provide a coating including phosphor on the lens. In other embodiments, the lens includes phosphor dispersed therein.
-
FIGS. 6A-6H are cross-sectional views of transmissive optical elements according to various embodiments of the present invention. These optical elements may be used to package semiconductor light emitting devices as will also be described below. - As shown in
FIG. 6A , transmissive optical elements according to some embodiments of the present invention include alens 170 that comprises transparent plastic. As used herein, the term “transparent” means that optical radiation from the semiconductor light emitting device can pass through the material without being totally absorbed or totally reflected. Thelens 170 includesphosphor 610 dispersed therein. As is well known to those having skill in the art, thelens 170 may comprise polycarbonate material and/or other conventional plastic materials that are used to fabricate transmissive optical elements. Moreover, thephosphor 610 can comprise any conventional phosphor including cerium-doped YAG and/or other conventional phosphors. In some specific embodiments, the phosphor comprises Cerium doped Yttrium Aluminum Garnet (YAG:Ce). In other embodiments, nano-phosphors may be used. Phosphors are well known to those having skill in the art and need not be described further herein. - In
FIG. 6A , thephosphor 610 is uniformly dispersed within thelens 170. In contrast, inFIG. 6B , thephosphor 620 is nonuniformly dispersed in thelens 170. Various patterns ofphosphor 620 may be formed, for example, to provide areas of higher intensity and/or different color and/or to provide various indicia on thelens 170 when illuminated. InFIGS. 6A-6B , thelens 110 is a dome-shaped lens. As used herein, the terms “dome” and “dome-shaped” refer to structures having a generally arcuate surface profile, including regular hemispherical structures as well as other generally arcuate structures that do not form a regular hemisphere, which are eccentric in shape and/or have other features, structures and/or surfaces. - Referring now to
FIG. 6C , one ormore coatings 630 may be provided on the outside of thelens 170. The coating may be a protective coating, a polarizing coating, a coating with indicia and/or any other conventional coating for an optical element that is well known to those having skill in the art. InFIG. 6D , one or moreinner coatings 640 is provided on the inner surface of thelens 170. Again, any conventional coating or combination of coatings may be used. - Moreover, other embodiments of the invention provide both an inner and an outer coating for the
lens 170 that includes uniformly distributedphosphor 610 and/or nonuniformly distributedphosphor 620 therein. By providing an inner and outer coating, improved index matching to the phosphor may be provided. Thus, three layers may be injection molded according to some embodiments of the present invention. Other embodiments of the present invention can use an index matching media, such as a liquid and/or solid gel, within the shell, to assist in index matching. The use of inner and outer layers can reduce the number of photons that can be trapped in the phosphor-containing layer due to index matching issues. -
FIG. 6E describes other embodiments of the present invention wherein a transparentinner core 650 is provided inside thelens 170. In some embodiments, as also shown inFIG. 6E , the transparentinner core 650 fills thelens 170, to provide a hemispherical optical element. The transparentinner core 650 may be uniformly transparent and/or may include translucent and/or opaque regions therein. The transparentinner core 650 may comprise glass, plastic and/or other optical coupling media. -
FIG. 6F illustrates other embodiments of the present invention wherein a phosphor-containinglens 170 is combined with a semiconductorlight emitting device 150 that is configured to emit light 662 into and through the transparentinner core 650 and through thelens 170, to emerge from thelens 170. -
FIG. 6G is a cross-sectional view of other embodiments of the present invention. As shown inFIG. 6G , a mountingsubstrate 100 is provided, such that thelight emitting device 150 is between the mountingsubstrate 100 and the transparentinner core 650. As also shown inFIG. 6G , the mountingsubstrate 100 includes acavity 110 therein and thelight emitting device 150 is at least partially in thecavity 110.Heat sink fins 190 also are provided. -
FIG. 6H illustrates yet other embodiments of the present invention. In these embodiments, thecavity 110 may be filled with anencapsulant 680, such as epoxy and/or other optical coupling media (e.g., silicon). Theencapsulant 680 can enhance optical coupling from thelight emitting device 150 to the transparentinner core 650.Heat sink fins 190 also are provided. - It will be understood by those having skill in the art that, although the embodiments of
FIGS. 6A-6H have been illustrated as separate embodiments, various elements ofFIGS. 6A-6H may be used together in various combinations and subcombinations of elements. Thus, for example, combinations of inner andouter coatings phosphor 610 and nonuniformly distributedphosphor 620, light emittingdevices 150, mountingsubstrates 100,cavities 110,inner cores 650 andencapsulant 680 may be used together. Moreover, embodiments ofFIGS. 6A-6H may be combined with any other embodiments disclosed herein. -
FIG. 7 is a cross-sectional view of light emitting devices according to other embodiments of the present invention. As shown inFIG. 7 , these embodiments include alens 170 which may be made of optically transparent material that is loaded with phosphor and/or other chemicals. Aninner core 650 may be made of optically transparent material such as plastic or glass and may be placed on an encapsulating-containingcavity 110 in a mountingsubstrate 100 includingheat sink fins 190. Thelens 170 and theinner core 650 form a composite lens for alight emitting diode 150. -
FIG. 8 is a schematic block diagram of an apparatus for forming transmissive optical elements according to various embodiments of the present invention. In particular,FIG. 8 illustrates an injection molding apparatus that may be used to form transmissive optical elements according to various embodiments of the present invention. As shown inFIG. 8 , an injection molding apparatus includes ahopper 810 or other storage device in which a transparent plastic and/orphosphor additive 850 are provided. The transparent plastic and/or phosphor additive may be provided in pellet, powder and/or solid form. Other additives, such as solvents, binders, etc. may be included, as is well known to those having skill in the art. Aninjector 820 may include a heater and a screw mechanism that is used to melt the transparent plastic and phosphor additive and/or maintain these materials in a melted state, to provide a molten liquid that comprises transparent plastic and the phosphor additive. Theinjector 820 injects the molten liquid into amold 840 vianozzle 830. Themold 840 includes anappropriate channel 860 therein, which can be used to define the shape of the optical element, such as a dome or keypad key. Injection molding of optical elements is well known to those having skill in the art and is described, for example, in U.S. Pat. Nos. 4,826,424; 5,110,278; 5,882,553; 5,968,422; 6,156,242 and 6,383,417, and need not be described in further detail herein. It also will be understood that casting techniques also may be used, wherein molten liquid that comprises a transparent plastic and a phosphor additive is provided in a female mold which is then coupled to a male mold (or vice versa) to cast the optical element. Casting of optical elements is described, for example, in U.S. Pat. Nos. 4,107,238; 4,042,552; 4,141,941; 4,562,018; 5,143,660; 5,374,668; 5,753,730 and 6,391,231, and need not be described in further detail herein. -
FIG. 9 is a flowchart of steps that may be used to package semiconductor light emitting devices according to various embodiments of the present invention. As shown inFIG. 9 , atBlock 910, a mold, such asmold 840 ofFIG. 8 , is filled with molten liquid that comprises a transparent plastic and a phosphor additive. AtBlock 920, the molten liquid is allowed to solidify to produce the optical element having phosphor dispersed therein. The optical element is then removed from the mold and mounted across a cavity in a solid metal block. -
FIG. 10 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to embodiments of the present invention. As shown inFIG. 10 atBlock 1010, a lens, such as a dome-shapedlens 170, that comprises a transparent plastic including a phosphor dispersed therein, is molded using injection molding, casting and/or other conventional techniques. AtBlock 1020, a core such as acore 650 ofFIG. 6E is formed. It will be understood that, in some embodiments, thecore 650 is placed or formed inside thelens 170, whereas, in other embodiments,Block 1020 precedesBlock 1010 by forming atransparent core 650 and filling a mold that includes atransparent core 650 with a molten liquid that comprises a transparent plastic and a phosphor additive, to form thelens 170 around the transparent core. - Still referring to
FIG. 10 , a semiconductor light emitting device, such asdevice 150, is placed in areflective cavity 110 of a mounting substrate such as mountingsubstrate 100. AtBlock 1040, an encapsulant, such asencapsulant 680 ofFIG. 6H , is applied to the mountingsubstrate 100, thelight emitting device 150 and/or thecore 650. Finally, atBlock 1050, the lens or shell is mated to the mounting substrate using an epoxy, a snap-fit and/or other conventional mounting techniques. - It may be desirable for the
inner core 650 to fill the entire lens, so as to reduce or minimize the amount ofencapsulant 680 that may be used. As is well known to those having skill in the art, theencapsulant 680 may have a different thermal expansion coefficient than the mountingsubstrate 100 and/or theinner core 650. By reducing or minimizing the amount ofencapsulant 680 that is used atBlock 1040, the effect of these thermal mismatches can be reduced or minimized. - It should also be noted that in some alternate implementations, the functions/acts noted in the blocks of FIGS. 9 and/or 10 may occur out of the order noted in the flowcharts. For example, two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved.
- Accordingly, some embodiments of the present invention can form a composite optical element such as a lens using molding or casting techniques. In some embodiments, injection molding can be used to place a phosphor layer dispersed in the molding material on the inner or outer surface and then completing the molding or casting process in the remaining volume, to form a desired optical element. These optical elements can, in some embodiments, convert a blue light emitting diode behind the lens, to create the appearance of white light.
- Other embodiments of the present invention may use the phosphor to evenly disperse the light and/or to disperse the light in a desired pattern. For example, conventional light emitting devices may emit light in a “Batwing” radiation pattern, in which greater optical intensity is provided at off-axis angles, such as angles of about 40° off-axis, compared to on-axis (0°) or at the sides (for example, angles greater than about 40°). Other light emitting diodes may provide a “Lambertian” radiation pattern, in which the greatest intensity is concentrated in a central area to about 40° off-axis and then rapidly drops off at larger angles. Still other conventional devices may provide a side emitting radiation pattern, wherein the greatest light intensity is provided at large angles, such as 90° from the axis, and falls rapidly at smaller angles approaching the axis. In contrast, some embodiments of the present invention can reduce or eliminate angular-dependent radiation patterns of light output from a light emitting device, such as angular dependence of Color Correlated Temperature (CCT). Thus, light intensity and the x,y chromaticity values/coordinates from all surfaces of the lens can remain relatively constant in some embodiments. This may be advantageous when used for illumination applications, such as a room where a spotlight effect is not desirable.
- Injection molding processes as described above, according to some embodiments of the invention, can allow formation of a single optical element with multiple features, such as lensing and white conversion. Additionally, by using a two-molding or casting technique, according to some embodiments, one can shape the phosphor layer to its desired configuration, to reduce or minimize the angular dependence of color temperature with viewing angle.
- Other embodiments of lenses including phosphor dispersed therein are described in application Ser. No. 10/659,240, filed Sep. 9, 2003, entitled Transmissive Optical Elements Including Transparent Plastic Shell Having a Phosphor Dispersed Therein, and Methods of Fabricating Same, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated by reference in its entirety as if set forth fully herein.
- In other embodiments of the present invention, a coating including phosphor is provided on the semiconductor
light emitting device 150 itself. In particular, it may be desirable to provide a phosphor for an LED, for example to provide solid-state lighting. In one example, LEDs that are used for solid-state white lighting may produce high radiant flux output at short wavelengths, for example in the range of about 380 nm to about 480 nm. One or more phosphors may be provided, wherein the short wavelength, high energy photon output of the LED is used to excite the phosphor, in part or entirely, to thereby down-convert in frequency some or all of the LED's output to create the appearance of white light. - As one specific example, ultraviolet output from an LED at about 390 nm may be used in conjunction with red, green and blue phosphors, to create the appearance of white light. As another specific example, blue light output at about 470 nm from an LED may be used to excite a yellow phosphor, to create the appearance of white light by transmitting some of the 470 nm blue output along with some secondary yellow emission occurring when part of the LEDs output is absorbed by the phosphor.
- Phosphors may be included in a semiconductor light emitting device using many conventional techniques. In one technique, phosphor is coated inside and/or outside the plastic shell of an LED. In other techniques, phosphor is coated on the semiconductor light emitting device itself, for example using electrophoretic deposition. In still other techniques, a drop of a material, such as epoxy that contains phosphor therein, may be placed inside the plastic shell, on the semiconductor light emitting device and/or between the device and the shell. This technique may be referred to as a “glob top”. The phosphor coatings may also incorporate an index matching material and/or a separate index matching material may be provided.
- Moreover, as was described above, published United States Patent Application No. US 2004/0056260 A1 describes a light emitting diode that includes a substrate having first and second opposing faces and a sidewall between the first and second opposing faces that extends at an oblique angle from the second face towards the first face. A conformal phosphor layer is provided on the oblique sidewall. The oblique sidewall can allow more uniform phosphor coatings than conventional orthogonal sidewalls.
- Semiconductor light emitting devices are fabricated, according to other embodiments of the present invention, by placing a suspension comprising phosphor particles suspended in solvent on at least a portion of a light emitting surface of a semiconductor light emitting device, and evaporating at least some of the solvent to cause the phosphor particles to deposit on at least a portion of the light emitting surface. A coating comprising phosphor particles is thereby formed on at least a portion of the light emitting surface.
- As used herein, a “suspension” means a two-phase solid-liquid system in which solid particles are mixed with, but undissolved (“suspended”), in liquid (“solvent”). Also, as used herein, a “solution” means a single-phase liquid system in which solid particles are dissolved in liquid (“solvent”).
-
FIG. 11A is a cross-sectional view of a semiconductor light emitting device package during an intermediate fabrication step according to various embodiments of the present invention. As shown inFIG. 1A , asuspension 1120 includingphosphor particles 1122 suspended in solvent 1124 is placed on at least a portion of alight emitting surface 150 a of a semiconductorlight emitting device 150. As used herein, “light” refers to any radiation, visible and/or invisible (such as ultraviolet) that is emitted by a semiconductorlight emitting element 150. At least some of the solvent 1124 is then evaporated, as shown by the arrow linkingFIGS. 11A and 11B , to cause thephosphor particles 1122 to deposit on at least the portion of thelight emitting surface 150 a, and form acoating 1130 thereon including thephosphor particles 1122. In some embodiments, thesuspension 1120 includingphosphor particles 1122 suspended in solvent 1124 is agitated while performing the placing ofFIG. 11A and/or while performing the evaporating. Moreover, as shown inFIG. 11B , evaporating can be performed to cause the phosphor particles 122 to uniformly deposit on at least the portion of thelight emitting surface 150 a, to thereby form auniform coating 1130 of thephosphor particles 1122. In some embodiments, thephosphor particles 1122 uniformly deposit on all thelight emitting surface 150 a. Moreover, in some embodiments, substantially all of the solvent 1124 can be evaporated. For example, in some embodiments, at least about 80% of the solvent can be evaporated. In some embodiments, substantially all the solvent 1124 is evaporated to cause thephosphor particles 1122 to uniformly deposit on all thelight emitting surface 150 a. - In some embodiments of the present invention, the solvent 1124 comprises Methyl Ethyl Ketone (MEK), alcohol, toluene, Amyl Acetate and/or other conventional solvents. Moreover, in other embodiments, the
phosphor particles 1122 may be about 3-4 μm in size, and about 0.2 gm of thesephosphor particles 1122 may be mixed into about 5 cc of MEK solvent 1124, to provide thesuspension 1120. Thesuspension 1120 may be dispensed via an eyedropper pipette, and evaporation may take place at room temperature or at temperatures above or below room temperature, such as at about 60° C. and/or at about 100° C. - Phosphors also are well known to those having skill in the art. As used herein, the
phosphor particles 1122 may be Cerium-doped Yttrium Aluminum Garnet (YAG:Ce) and/or other conventional phosphors and may be mixed into the solvent 1124 using conventional mixing techniques, to thereby provide thesuspension 1120 comprisingphosphor particles 1122. In some embodiments, the phosphor is configured to convert at least some light that is emitted from thelight emitting surface 150 a such that light that emerges from the semiconductor light emitting device appears as white light. -
FIG. 12A is a cross-sectional view of other embodiments of the present invention. As shown inFIG. 12A , a mountingsubstrate 100 is provided, and the semiconductorlight emitting element 150 is mounted in acavity 110 therein.Heat sink fins 190 also are provided. Thesuspension 1120 includingphosphor particles 1122 suspended in solvent 1124 is placed in thecavity 110. Thus, thecavity 110 can be used to confine thesuspension 1120 and thereby provide a controlled amount and geometry for thesuspension 1120. - Referring now to
FIG. 12B , evaporation is performed, to thereby evaporate at least some of the solvent 1124 to cause thephosphor particles 1122 to deposit on at least a portion of thelight emitting surface 150 a, and form acoating 1130 including thephosphor particles 1122. -
FIGS. 13A and 13B illustrate other embodiments of the present invention. As shown inFIG. 13A , in these embodiments, thecavity 110 includes acavity floor 110 b, and the semiconductorlight emitting device 150 is mounted on thecavity floor 110 b. Moreover, the semiconductorlight emitting device 150 protrudes away from thecavity floor 110 b. In some embodiments, thelight emitting surface 150 a of the semiconductorlight emitting device 150 includes aface 150 b that is remote from thecavity floor 110 b, and asidewall 150 c that extends between theface 150 b and thecavity floor 110 b. As shown inFIG. 13B , evaporating is performed to evaporate at least some of the solvent 1124, to cause thephosphor particles 1122 to uniformly deposit on at least a portion of thelight emitting surface 150 a and thereby form acoating 1130 of uniform thickness comprising thephosphor particles 1122. As also shown inFIG. 13B , in some embodiments, the coating may be of uniform thickness on theface 150 b and on thesidewall 150 c. In some embodiments, thecoating 1130 may extend uniformly on thefloor 110 b outside thelight emitting element 150. In other embodiments, thecoating 1130 also may extend at least partially ontosidewalls 110 a of thecavity 110. - In other embodiments of the present invention, a binder may be added to the
suspension 1120 so that, upon evaporation, thephosphor particles 1122 and the binder deposit on at least the portion of thelight emitting surface 150 a, and form a coating thereon comprising thephosphor particles 1122 and the binder. In some embodiments, a cellulose material, such as ethyl cellulose and/or nitro cellulose, may be used as a binder. Moreover, in other embodiments, at least some of the binder may evaporate along with the solvent. - In other embodiments of the present invention, the
suspension 1120 includes thephosphor particles 1122 and light scattering particles suspended, in solvent 1124, and wherein at least some of the solvent 1124 is evaporated to cause thephosphor particles 1122 and the light scattering particles to deposit on at least a portion of thelight emitting device 150, and form acoating 1130 including thephosphor particles 1122 and the light scattering particles. In some embodiments, the light scattering particles may include SiO2 (glass) particles. By selecting the size of the scattering particles, blue light may be effectively scattered to make the emission source (for white applications) more uniform (more specifically, random), in some embodiments. - It will also be understood that combinations and subcombinations of embodiments of
FIGS. 11A-13B also may be provided, according to various embodiments of the invention. Moreover, combinations and subcombinations of embodiments ofFIGS. 11A-13B with any or all of the other figures also may be provided according to various embodiments of the invention. Other embodiments of coating a semiconductor light emitting device by evaporating solvents from a suspension are described in application Ser. No. 10/946,587, filed Sep. 21, 2004, entitled Methods of Coating Semiconductor Light Emitting Elements by Evaporating Solvent From a Suspension, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. Other embodiments of coating a semiconductor light emitting device by coating a patternable film including transparent silicone and phosphor on a semiconductor light emitting device are described in application Ser. No. 10/947,704, filed Sep. 23, 2004, entitled Semiconductor Light Emitting Devices Including Patternable Films Comprising Transparent Silicone and Phosphor, and Methods of manufacturing Same, assigned to the assignee of the present invention, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. - Other embodiments of the invention provide a flexible film that includes an optical element therein on the first metal face, wherein the optical element extends across the cavity. In some embodiments, the optical element is a lens. In other embodiments, the optical element may include a phosphor coating and/or may include phosphor dispersed therein.
-
FIG. 14 is an exploded cross-sectional view of semiconductor light emitting device packages and assembling methods therefor, according to various embodiments of the present invention. Referring toFIG. 14 , these semiconductor light emitting device packages include asolid metal block 100 having afirst face 100 a including acavity 110 therein, and asecond face 100 b, including a plurality ofheat sink fins 190 therein. Aflexible film 1420, including therein anoptical element 1430, is provided on thefirst face 100 a, and a semiconductorlight emitting device 150 is provided between themetal block 100 and theflexible film 1120, and configured to emit light 662 through the optical element. Anattachment element 1450 may be used to attach theflexible film 1420 and thesolid metal block 100 to one another. - Still referring to
FIG. 14 , theflexible film 1420 can provide a cover slip that can be made of a flexible material such as a conventional Room Temperature Vulcanizing (RTV) silicone rubber. Other silicone-based and/or flexible materials may be used. By being made of a flexible material, theflexible film 1420 can conform to thesolid metal block 100 as it expands and contracts during operations. Moreover, theflexible film 1420 can be made by simple low-cost techniques such as transfer molding, injection molding and/or other conventional techniques that are well known to those having skill in the art. - As described above, the
flexible film 1420 includes therein anoptical element 1430. The optical element can include a lens, a prism, an optical emission enhancing and/or converting element, such as a phosphor, an optical scattering element and/or other optical element. One or moreoptical elements 1430 also may be provided, as will be described in detail below. Moreover, as shown inFIG. 14 , anoptical coupling media 1470, such as an optical coupling gel and/or other index matching material, may be provided between theoptical element 1430 and the semiconductorlight emitting device 150, in some embodiments. - Still referring to
FIG. 14 , theattachment element 1450 can be embodied as an adhesive that may be placed around the periphery of thesolid metal block 100, around the periphery of theflexible film 1420 and/or at selected portions thereof, such as at the corners thereof. In other embodiments, thesolid metal block 100 may be coined around theflexible film 1420, to provide anattachment element 1450. Other conventional attaching techniques may be used. -
FIG. 14 also illustrates methods of assembling or packaging semiconductor light emitting devices according to various embodiments of the present invention. As shown inFIG. 14 , a semiconductorlight emitting element 150 is mounted in acavity 110 in afirst face 100 a of asolid metal block 100 that includesfins 190 on asecond face 100 b thereof. Aflexible film 1420 that includes therein anoptical element 1430 is attached to thefirst face 100 a, for example using anattachment element 1450, such that, in operation, the semiconductorlight emitting device 150 emits light 662 through theoptical element 1430. In some embodiments, anoptical coupling media 1470 is placed between the semiconductorlight emitting device 150 and theoptical element 1430. -
FIG. 15 is a cross-sectional view of packaged semiconductor light emitting devices ofFIG. 14 , according to other embodiments of the present invention. Theflexible film 1420 extends onto theface 100 a beyond thecavity 110. Theoptical element 1430 overlies thecavity 110, and the semiconductorlight emitting device 150 is in thecavity 110, and is configured to emit light 662 through theoptical element 1430. InFIG. 15 , theoptical element 1430 includes a concave lens. In some embodiments, anoptical coupling media 1470 is provided in thecavity 110 between theoptical element 1430 and the semiconductorlight emitting device 150. In some embodiments, theoptical coupling media 1470 fills thecavity 110. -
FIG. 16 is a cross-sectional view of other embodiments of the present invention. As shown inFIG. 16 , twooptical elements flexible film 1420. A firstoptical element 1430 includes a lens and a secondoptical element 1630 includes a prism. Light from the semiconductorlight emitting device 150 passes through theprism 1630 and through thelens 1430. Anoptical coupling media 1470 also may be provided. In some embodiments, theoptical coupling media 1470 fills thecavity 110. Theoptical coupling media 1470 may have a sufficient difference in index of refraction from theprism 1630 such that theprism 1630 can reduce shadowing. As shown inFIG. 16 , the semiconductorlight emitting device 150 includes awire 1650 that extends towards theflexible film 1420, and theprism 1630 is configured to reduce shadowing by thewire 1650 of the light that is emitted from the semiconductorlight emitting device 150. More uniform light emissions thereby may be provided, with reduced shadowing of thewire 1650. It will be understood that the term “wire” is used herein in a generic sense to encompass any electrical connection for the semiconductorlight emitting device 150. -
FIG. 17 is a cross-sectional view of other embodiments of the present invention. As shown inFIG. 17 ,phosphor 1710 is provided on the flexible film 1320 between thelens 1430 and the semiconductorlight emitting device 150. The phosphor 410 can include cerium-doped Yttrium Aluminum Garnet (YAG) and/or other conventional phosphors. In some embodiments, the phosphor comprises Cerium doped Yttrium Aluminum Garnet (YAG:Ce). In other embodiments, nano-phosphors may be used. Phosphors are well known to those having skill in the art and need not be described further herein. Anoptical coupling media 1470 also may be provided that may fill thecavity 110. -
FIG. 18 illustrates yet other embodiments of the present invention. In these embodiments, thelens 1430 includes a concaveinner surface 1430 a adjacent the semiconductorlight emitting device 150, and thephosphor 1710 includes a conformal phosphor layer on the concaveinner surface 1430 a. Anoptical coupling media 1470 also may be provided that may fill thecavity 110. -
FIG. 19 is a cross-sectional view of other embodiments. As shown inFIG. 19 , at least aportion 1420 d of theflexible film 1420 that overlies thecavity 110 is transparent to the light. Moreover, at least aportion 1420 c of theflexible film 1420 that extends onto theface 100 a beyond thecavity 110 is opaque to the light, as shown by the dottedportions 1420 c of theflexible film 1420. Theopaque regions 1420 c can reduce or prevent bouncing of light rays, and thereby potentially produce a more desirable light pattern. Anoptical coupling media 1470 also may be provided that may fill thecavity 110. -
FIG. 20 is a cross-sectional view of other embodiments of the present invention wherein theflexible film 1420 may be fabricated of multiple materials. As shown inFIG. 20 , at least aportion 1420 d of theflexible film 1420 that overlies thecavity 110 includes a first material, and at least aportion 1420 c of theflexible film 1420 that extends onto theface 100 a beyond thecavity 110 includes a second material. Two or more materials may be used in theflexible film 1420 in some embodiments, to provide different characteristics for the portion of theflexible film 1420 through which light is emitted and through which light is not emitted. Multiple materials may be used for other purposes in other embodiments. For example, an inflexible and/or flexible plastic lens may be attached to a flexible film. Such aflexible film 1420 with multiple materials may be fabricated using conventional multiple molding techniques, for example. In some embodiments, the first material that is molded may not be fully cured, so as to provide a satisfactory bond that attaches to the second material that is subsequently molded. In other embodiments, the same material may be used for the optical element and the flexible film, wherein the optical element is formed and then the flexible film is formed surrounding the optical element. Anoptical coupling media 1470 also may be provided that may fill thecavity 110. -
FIG. 21 is a cross-sectional view of other embodiments of the present invention. In these embodiments, the semiconductorlight emitting element 150 includes awire 1650, that extends towards and contacts theflexible film 1420 in thecavity 110. Theflexible film 1420 includes atransparent conductor 2110 which can include Indium Tin Oxide (ITO) and/or other conventional transparent conductors. Thetransparent conductor 2110 extends in thecavity 110 and electrically connects to the wire. Reduced shadowing-by thewire 1650 thereby may be provided. Moreover, a wire bond to themetal block 100, and the potential consequent light distortion, may be reduced or eliminated. Anoptical coupling media 1470 also may be provided that may fill thecavity 110. -
FIG. 22 is a cross-sectional view of other embodiments of the present invention. As shown inFIG. 22 , theoptical element 1430 includes a lens that overlies thecavity 110 and protrudes away from thecavity 110. Theflexible film 1420 further includes a protrudingelement 2230 between thelens 1430 and thelight emitting element 150 that protrudes towards thecavity 110. As shown inFIG. 22 , aconformal phosphor layer 1710 is provided on the protrudingelement 2230. By providing the protrudingelement 2230 on the back of thelens 1430,optical coupling media 1470 in the device may be displaced. Arrangements ofFIG. 22 may thus provide more uniform phosphor coating at desired distances from thelight emitting element 150, so as to provide more uniform illumination. Theoptical coupling media 1470 may fill thecavity 110. -
FIGS. 23 and 24 illustrate packages including multiple semiconductor light emitting devices and/or multiple optical elements according to various embodiments of the present invention. For example, as shown inFIG. 23 , theoptical element 1430 is a first optical element, and the semiconductorlight emitting device 150 is a first semiconductor light emitting device. Theflexible film 1420 also includes therein a secondoptical element 1430′ that is spaced apart from the firstoptical element 1430, and the device further includes a second semiconductorlight emitting device 150′ between thesubstrate 100 and theflexible film 1420, and configured to emit light through the secondoptical element 1430′. Moreover, a thirdoptical element 1430″ and a third semiconductorlight emitting device 150″ also may be provided. Theoptical elements light emitting devices FIG. 23 , thecavity 110 is a first cavity, and second andthird cavities 110′, 110″, respectively, are provided for the second and third semiconductorlight emitting devices 150′, 150″, respectively. Thecavities optical coupling media 1470 also may be provided that may fill the cavity or cavities. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments. - As also shown in
FIG. 23 , thephosphor 1710 may be a first phosphor layer, and second and/orthird phosphor layers 1710′ and 1710″, respectively, may be provided on theflexible film 1420 between the secondoptical element 1430′ and the second semiconductorlight emitting device 150′, and between the thirdoptical element 1430′ and the third semiconductorlight emitting device 150″, respectively. The phosphor layers 1710, 1710′, 1710″ may be the same, may be different and/or may be eliminated. In particular, in some embodiments of the present invention, thefirst phosphor layer 1710 and the first semiconductorlight emitting device 150 are configured to generate red light, thesecond phosphor layer 1710′ and the second semiconductorlight emitting device 150′ are configured to generate blue light, and thethird phosphor layer 1710″ and the third semiconductorlight emitting device 150″ are configured to generate green light. A Red, Green, Blue (RGB) light emitting element that can emit white light thereby may be provided in some embodiments. -
FIG. 24 is a cross-sectional view of other embodiments of the present invention. In these embodiments, asingle cavity 2400 is provided for the first, second and third semiconductorlight emitting devices optical coupling media 1470 also may be provided that may fill thecavity 2400. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments. -
FIG. 25 is a cross-sectional view of yet other embodiments of the present invention. InFIG. 25 , theoptical element 2530 comprises a lens having phosphor dispersed therein. Many embodiments of lenses including phosphor dispersed therein were described above and need not be repeated. In still other embodiments of the present invention, an optical scattering element may be embedded in the lens as shown inFIG. 25 , and/or provided as a separating layer as shown, for example, inFIG. 22 , in addition or instead of phosphor. -
FIG. 26 is a perspective view of a semiconductor light emitting device package according to other embodiments of the present invention. - It will be understood by those having skill in the art that various embodiments of the invention have been described individually in connection with
FIGS. 14-26 . However, combinations and subcombinations of the embodiments ofFIGS. 14-26 may be provided according to various embodiments of the present invention, and also may be combined with embodiments according to any of the other figures described herein. -
FIG. 27 is a cross-sectional view of a semiconductor light emitting device package according to various embodiments of the present invention. As shown inFIG. 27 , asolid metal block 100 includes a plurality ofcavities 110 in afirst metal face 100 a thereof, and a plurality ofheat sink fins 190 in asecond metal face 100 b thereof. An insulatinglayer 120 is provided on thefirst metal face 100 a. Aconductive layer 130 is provided on the insulating layer, and is patterned to provide areflective coating 2730 a in thecavity 110, and first 2730 b and second 2730 c conductive traces in thecavity 110 that are configured to connect to at least one semiconductorlight emitting device 150 that is mounted in the cavity. As shown inFIG. 27 , the traces can provide series connection between the semiconductor light emitting devices. However, parallel and/or series/parallel or anti-parallel connections also may be provided. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments. - Still referring to
FIG. 27 , aflexible film 1420 that includes anoptical element 1430 such as a lens therein, is provided on thefirst metal face 100 a, wherein a respectiveoptical element 1430 extends across arespective cavity 110. Various embodiments offlexible films 1420 andoptical elements 1430 may be provided as was described extensively above. Moreover, phosphor may be integrated as was described extensively above. In other embodiments,discrete lenses 170 also may be provided, instead of theflexible film 1420 containingoptical elements 1430. In some embodiments, theconductor 130 is connected to anintegrated circuit 2710, such as the light emitting device driver integrated circuit, on thesolid metal block 110. In some embodiments, a semiconductor light emitting package ofFIG. 27 can be configured to provide a plug-in substitute for a conventional light bulb. -
FIG. 28 is a perspective view of embodiments according toFIG. 27 . As shown inFIG. 28 , an array ofcavities 110 that are connected by aconductive layer 130 may be provided on thefirst face 100 a of asolid metal block 100. InFIG. 28 , a uniformly spaced 10×10 array of cavities and a corresponding 10×10 array ofoptical elements 1430 on aflexible film 1420, is shown. However, larger or smaller arrays may be provided and the arrays may be circular, randomly spaced and/or of other configuration. Moreover, nonuniform spacing may be provided in some or all portions of the array ofcavities 110 andoptical elements 1430. More specifically, uniform spacing may promote uniform light output, whereas nonuniform spacing may be provided to compensate for variations in heat dissipation abilities of theheat sink fins 190 across various portions of thesolid metal block 100. - It will also be understood that embodiments of
FIGS. 27 and 28 may be combined in various combinations and subcombinations with any of the other embodiments described herein. -
FIG. 29 is a side cross-sectional view of other embodiments of the present invention. In these embodiments, thefirst metal face 100 a further includes a plurality ofpedestals 2900 therein, and a respective one of the plurality ofcavities 110 is in a respective one of the plurality ofpedestals 2900. The insulatinglayer 120 andconductive layer 130 are not illustrated inFIG. 29 for the sake of clarity.Multiple cavities 110 also may be provided in a givenpedestal 2900 in other embodiments. In embodiments ofFIG. 29 , theflexible film 1420′ includes a plurality ofoptical elements 1430′, such as lenses, a respective one of which extends across arespective pedestal 2900 and across arespective cavity 110. It will be understood that larger or smaller numbers of semiconductor light emitting devices and/or cavities may be provided in other embodiments. - By providing
pedestals 2900 according to some embodiments of the present invention, thelight emitting devices 150 may be placed closer to the radial center of theoptical elements 1430′, to thereby allow the uniformity of emissions to be enhanced. It will also be understood that embodiments ofFIG. 29 may be provided with discrete optical elements, such as lenses, a respective one of which spans across arespective pedestal 2900 andcavity 110, and that embodiments ofFIG. 29 may be combined with any combination or subcombination of the other embodiments that were described above. -
FIG. 30 is a flowchart of steps that may be performed to package semiconductor light emitting devices according to various embodiments of the present invention. Methods ofFIG. 30 may be used to package one or more semiconductor light emitting devices, to provide structures that were described in any of the preceding figures. - As shown in
FIG. 30 atBlock 3010, a solid metal block including cavities and heat sink fins is fabricated, as was described extensively above. An insulating layer is formed on at least a portion of the solid metal block, for example on the first metal face thereof, atBlock 3020, as was described extensively above. AtBlock 3030, a conductive layer is formed on the insulating layer. The conductive layer may be patterned to provide a reflective coating in the cavities, and first and second conductive traces on the first face that extend into the cavities, as was described extensively above. AtBlock 3040, at least one semiconductor light emitting device is mounted in a respective cavity, and electrically connected to the first and second conductive traces in the respective cavity, as was described extensively above. AtBlock 3050, an optical coupling medium may be added, as was described above. AtBlock 3060, a lens, optical element and/or flexible film is placed on the first face, as was described extensively above. In other embodiments, through holes, reflector layers and/or other structures that were described extensively above, also may be provided. - It also will be noted that in some alternate implementations, the functions/acts noted in the blocks of
FIG. 30 may occur out of the order noted in the flowchart. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. - Additional discussion of various embodiments of the present invention now will be provided. Embodiments of the present invention can provide a three-dimensional topside and backside topology on solid metal blocks, to thereby provide integral reflector cavities and integral heat sinks all in one piece. The integrated optical cavities may facilitate alignment and ease of manufacturing. The integral heat sink may enhance thermal efficiency. By adopting a three-dimensional topside topology to form reflectors for the LEDs, the need to individually package the LEDs, mount the package to a heat sink and add the desired drive electronics may be eliminated, according to some embodiments of the present invention. Thus, a “chip on integral reflector heat sink” may be provided as a single component. High optical efficiency and high thermal efficiency thereby may be provided. Adding the drive circuitry can provide a complete solution for a functional luminary that may only need a source voltage and a final luminary housing.
- Any shape or density device may be provided. For example, one may desire to have a high lumen intensity (lumen per square millimeter), or one may desire to enhance or optimize the thermal efficiency by distributing the cavity layout. A high density embodiment may have four high power LEDs such as are marketed under the designation XB900 by. Cree, Inc., the assignee of the present invention, to provide a 2×2 array, while a distributed thermal approach may have 100 lower power LEDs, such as are marketed under the designation XB290 by Cree, Inc., the assignee of the present invention, to provide a 10×10 array, to achieve the same lumen output. The XB900 and XB290 devices are described in a product brochure entitled Cree Optoelectronics LED Product Line, Publication CPR3AX, Rev. D, 2001-2002. Other devices that are described in this product brochure, such as XT290, XT230 and/or other devices from other manufacturers also may be used.
- As was described above, the optical cavities may be either recessed or may be provided as optical cavities in pedestals. The conductive layer can provide die-attach pads and wire bond pads. Separate traces may be provided for red, green or blue LEDs, or all the LEDs may be connected in series or in parallel.
- Embodiments of the present invention can provide a configuration that may be able to replace a standard MR16 or other light fixture. In some embodiments, 6.4 watts input may provide about 2.4 watts of optical power and 4 watts of heat dissipation.
- In the drawings and specification, there have been disclosed embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
Claims (88)
1. A mounting substrate for a semiconductor light emitting device comprising:
a solid metal block including first and second opposing metal faces;
the first metal face including therein a cavity that is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by at least one semiconductor light emitting device that is mounted therein away from the cavity; and
the second metal face including therein a plurality of heat sink fins.
2. A mounting substrate according to claim 1 further comprising a reflective coating in the cavity.
3. A mounting substrate according to claim 1 further comprising first and second conductive traces in the cavity that are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity.
4. A mounting substrate according to claim 1 further comprising:
an insulating layer on the first metal face; and
a conductive layer on the insulating layer that is patterned to provide a reflective coating in the cavity and first and second conductive traces in the cavity that are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity.
5. A mounting substrate according to claim 4 wherein the solid metal block comprises a solid aluminum block and wherein the insulating layer comprises aluminum oxide.
6. A mounting substrate according to claim 4 wherein the solid metal block comprises a solid steel block and wherein the insulating layer comprises ceramic.
7. A mounting substrate according to claim 1 wherein the first metal face further includes a pedestal therein and wherein the cavity is in the pedestal.
8. A mounting substrate according to claim 3 wherein the solid metal block includes a through hole therein that extends from the first face to the second face and wherein the through hole includes a conductive via therein that is electrically connected to the first or second conductive traces.
9. A mounting substrate according to claim 1 in combination with at least one semiconductor light emitting device that is mounted in the cavity.
10. A mounting substrate according to claim 9 in further combination with a lens that extends across the cavity.
11. A mounting substrate according to claim 7 in combination with at least one semiconductor light emitting device that is mounted in the cavity in the pedestal.
12. A mounting substrate according to claim 11 in further combination with a lens that extends across the pedestal and across the cavity.
13. A mounting substrate according to claim 9 in further combination with a flexible film that includes an optical element therein on the first metal face, wherein the optical element extends across the cavity.
14. A mounting substrate according to claim 11 in further combination with a flexible film that includes an optical element therein on the first metal face, wherein the optical element extends across the pedestal and across the cavity.
15. A mounting substrate according to claim 13 wherein the optical element comprises a lens.
16. A mounting substrate according to claim 14 wherein the optical element comprises a lens.
17. A mounting substrate according to claim 10 in further combination with a coating comprising phosphor on the lens.
18. A mounting substrate according to claim 12 in further combination with a coating comprising phosphor on the lens.
19. A mounting substrate according to claim 13 in further combination with a coating comprising phosphor on the optical element.
20. A mounting substrate according to claim 14 in further combination with a coating comprising phosphor on the optical element.
21. A mounting substrate according to claim 10 wherein the lens includes phosphor dispersed therein.
22. A mounting substrate according to claim 12 wherein the lens includes phosphor dispersed therein.
23. A mounting substrate according to claim 13 wherein the optical element includes phosphor dispersed therein.
24. A mounting substrate according to claim 14 wherein the optical element includes phosphor dispersed therein.
25. A mounting substrate according to claim 9 in further combination with a coating comprising phosphor on the at least one semiconductor light emitting device.
26. A mounting substrate according to claim 11 in further combination with a coating comprising phosphor on the at least one semiconductor light emitting device.
27. A mounting substrate according to claim 3 further comprising an integrated circuit on the solid metal block that is electrically connected to the first and second traces.
28. A mounting substrate according to claim 3 further comprising a semiconductor light emitting device driver integrated circuit on the solid metal block that is electrically connected to the first and second traces.
29. A mounting substrate according to claim 9 wherein the at least one semiconductor light emitting device comprises at least one light emitting diode.
30. A mounting substrate according to claim 9 in combination with an optical coupling media in the cavity at least partially surrounding the light emitting device.
31. A mounting substrate for semiconductor light emitting devices comprising:
a solid metal block including first and second opposing metal faces;
the first metal face including therein a plurality of cavities, a respective one of which is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by the at least one semiconductor light emitting device that is mounted therein away from the respective cavity; and
the second metal face including therein a plurality of heat sink fins.
32. A mounting substrate according to claim 31 further comprising a reflective coating in the plurality of cavities.
33. A mounting substrate according to claim 31 further comprising first and second conductive traces on the first face that extend into the plurality of cavities and are configured to connect to at least one semiconductor light emitting device that is mounted in the respective cavity.
34. A mounting substrate according to claim 31 further comprising:
an insulating layer on the first metal face; and
a conductive layer on the insulating layer that is patterned to provide a reflective coating in the plurality of cavities and first and second conductive traces on the first face that extend into the plurality of cavities and are configured to connect to at least one semiconductor light emitting device that is mounted in the cavity.
35. A mounting substrate according to claim 34 wherein the solid metal block comprises a solid aluminum block and wherein the insulating layer comprises aluminum oxide.
36. A mounting substrate according to claim 34 wherein the solid metal block comprises a solid steel block and wherein the insulating layer comprises ceramic.
37. A mounting substrate according to claim 31 wherein the first metal face further includes a plurality of pedestals therein and wherein a respective one of the plurality of cavities is in a respective one of the plurality of pedestals.
38. A mounting substrate according to claim 33 wherein the solid metal block includes a through hole therein that extends from the first face to the second face and wherein the through hole includes a conductive via therein that is electrically connected to the first or second conductive traces.
39. A mounting substrate according to claim 31 in combination with at least one semiconductor light emitting device that is mounted in a respective cavity.
40. A mounting substrate according to claim 39 in further combination with a plurality of lenses, a respective one of which extends across a respective one of the cavities.
41. A mounting substrate according to claim 37 in combination with at least one semiconductor light emitting device that is mounted in a respective cavity in a respective pedestal.
42. A mounting substrate according to claim 41 in further combination with a plurality of lenses, a respective one of which extends across a respective one of the pedestals and across a respective one of the cavities.
43. A mounting substrate according to claim 39 in further combination with a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective cavity.
44. A mounting substrate according to claim 41 in further combination with a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective pedestal and across a respective cavity.
45. A mounting substrate according to claim 43 wherein the optical element comprises a lens.
46. A mounting substrate according to claim 44 wherein the optical element comprises a lens.
47. A mounting substrate according to claim 40 in further combination with a coating comprising phosphor on the lenses.
48. A mounting substrate according to claim 42 in further combination with a coating comprising phosphor on the lenses.
49. A mounting substrate according to claim 43 in further combination with a coating comprising phosphor on the optical elements.
50. A mounting substrate according to claim 44 in further combination with a coating comprising phosphor on the optical elements.
51. A mounting substrate according to claim 40 wherein the lenses include phosphor dispersed therein.
52. A mounting substrate according to claim 42 wherein the lenses include phosphor dispersed therein.
53. A mounting substrate according to claim 43 wherein the optical elements include phosphor dispersed therein.
54. A mounting substrate according to claim 44 wherein the optical elements include phosphor dispersed therein.
55. A mounting substrate according to claim 39 in further combination with a coating comprising phosphor on the semiconductor light emitting device.
56. A mounting substrate according to claim 41 in further combination with a coating comprising phosphor on the semiconductor light emitting device.
57. A mounting substrate according to claim 33 further comprising an integrated circuit on the solid metal block that is electrically connected to the first and second traces.
58. A mounting substrate according to claim 33 further comprising a semiconductor light emitting device driver integrated circuit on the solid metal block that is electrically connected to the first and second traces.
59. A mounting substrate according to claim 39 wherein the semiconductor light emitting devices comprise light emitting diodes.
60. A mounting substrate according to claim 39 in combination with an optical coupling media in the cavities at least partially surrounding the light emitting devices.
61. A mounting substrate according to claim 31 wherein the plurality of cavities are uniformly and/or nonuniformly spaced apart from one another in the first face.
62. A semiconductor light emitting device packaging method comprising:
fabricating a solid metal block including first and second opposing metal faces, the first metal face including therein a plurality of cavities, a respective one of which is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by the at least one semiconductor light emitting device that is mounted therein away from the respective cavity, and the second metal face including therein a plurality of heat sink fins;
forming an insulating layer on the first metal face;
forming a conductive layer on the insulating layer that is patterned to provide a reflective coating in the plurality of cavities and first and second conductive traces on the first face that extend into the plurality of cavities and are configured to connect to a plurality of semiconductor light emitting devices that are mounted in the cavities; and
mounting at least one semiconductor light emitting device in a respective cavity, and electrically connected to the first and second conductive traces in the respective cavity.
63. A method according to claim 62 wherein mounting is preceded by:
fabricating a reflective coating in the plurality of cavities.
64. A method according to claim 62 wherein the first metal face further includes a plurality of pedestals therein and wherein a respective one of the plurality of cavities is in a respective one of the plurality of pedestals.
65. A method according to claim 62 wherein the solid metal block includes a through hole therein that extends from the first face to the second face, the method further comprising:
forming a conductive via in the through hole that is electrically connected to the first or second conductive traces.
66. A method according to claim 62 wherein mounting is followed by:
placing a respective lens across a respective one of the cavities.
67. A method according to claim 64 wherein mounting is followed by:
placing a respective lens across a respective one of the pedestals and across a respective one of the cavities.
68. A method according to claim 62 wherein mounting is followed by:
placing a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective cavity.
69. A method according to claim 64 wherein mounting is followed by:
placing a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective pedestal and across a respective cavity.
70. A method according to claim 66 further comprising:
coating the lenses with phosphor.
71. A method according to claim 67 further comprising:
coating the lenses with phosphor.
72. A method according to claim 68 further comprising:
coating the optical element with phosphor.
73. A method according to claim 69 further comprising:
coating the optical element with phosphor.
74. A method according to claim 62 further comprising:
coating the semiconductor light emitting devices with phosphor.
75. A method according to claim 62 further comprising:
electrically connecting an integrated circuit to the first and second traces.
76. A method according to claim 62 further comprising:
electrically connecting a semiconductor light emitting device driver integrated circuit to the first and second traces.
77. A method according to claim 62 further comprising:
placing an optical coupling media in the cavities at least partially surrounding the light emitting devices.
78. A semiconductor light emitting device package comprising:
a solid metal block including first and second opposing metal faces, the first metal face including therein a plurality of cavities, a respective one of which is configured to mount at least one semiconductor light emitting device therein and to reflect light that is emitted by the at least one semiconductor light emitting device that is mounted therein away from the respective cavity, and the second metal face including therein a plurality of heat sink fins;
an insulating layer on the first metal face;
at least one semiconductor light emitting device in a respective cavity; and
a conductive layer on the insulating layer that is patterned to provide a reflective coating in the plurality of cavities and first and second conductive traces on the first face that extend into the plurality of cavities and that electrically connect to the at least one semiconductor light emitting device in the respective cavity.
79. A package according to claim 78 further comprising:
a reflective coating in the plurality of cavities.
80. A package according to claim 78 wherein the first metal face further includes a plurality of pedestals therein and wherein a respective one of the plurality of cavities is in a respective one of the plurality of pedestals.
81. A package according to claim 78 wherein the solid metal block includes a through hole therein that extends from the first face to the second face, the package further comprising:
a conductive via in the through hole that is electrically connected to the first or second conductive traces.
82. A package according to claim 78 further comprising:
a plurality of lenses, a respective one of which extends across a respective one of the cavities.
83. A package according to claim 80 further comprising:
a plurality of lenses, a respective one of which extends across a respective one of the pedestals and across a respective one of the cavities.
84. A package according to claim 78 further comprising:
a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective cavity.
85. A package according to claim 80 further comprising:
a flexible film that includes a plurality of optical elements therein on the first metal face, wherein a respective optical element extends across a respective pedestal and across a respective cavity.
86. A package according to claim 78 further comprising:
an integrated circuit on the solid metal block that is electrically connected to the first and second traces.
87. A package according to claim 78 further comprising:
a semiconductor light emitting device driver integrated circuit on the solid metal block that is electrically connected to the first and second traces.
88. A package according to claim 78 further comprising:
an optical coupling media in the cavities at least partially surrounding the light emitting devices.
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/972,910 US20060097385A1 (en) | 2004-10-25 | 2004-10-25 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
PCT/US2005/023873 WO2006046981A2 (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
KR1020077009221A KR101203818B1 (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
EP09177126A EP2151873B1 (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages |
EP05770853A EP1805807A2 (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
TW094122643A TWI460877B (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
JP2007538890A JP2008518461A (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrate and package including cavity and heat sink and method for packaging them |
TW103106637A TW201424046A (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
AU2005300077A AU2005300077A1 (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
CNA2005800364558A CN101048880A (en) | 2004-10-25 | 2005-07-05 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US12/363,000 US8598606B2 (en) | 2004-10-25 | 2009-01-30 | Solid metal block semiconductor light emitting device mounting substrates and packages |
US12/484,713 US7906793B2 (en) | 2004-10-25 | 2009-06-15 | Solid metal block semiconductor light emitting device mounting substrates |
US13/074,942 US20110210360A1 (en) | 2004-10-25 | 2011-03-29 | Transmissive optical elements including phosphor patterns therein |
JP2011270840A JP2012089870A (en) | 2004-10-25 | 2011-12-12 | Solid metal block semiconductor light emitting device mounting substrates, package including cavity and heat sink, and method for packaging the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/972,910 US20060097385A1 (en) | 2004-10-25 | 2004-10-25 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/363,000 Continuation US8598606B2 (en) | 2004-10-25 | 2009-01-30 | Solid metal block semiconductor light emitting device mounting substrates and packages |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060097385A1 true US20060097385A1 (en) | 2006-05-11 |
Family
ID=36097284
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/972,910 Abandoned US20060097385A1 (en) | 2004-10-25 | 2004-10-25 | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US12/363,000 Active 2026-10-29 US8598606B2 (en) | 2004-10-25 | 2009-01-30 | Solid metal block semiconductor light emitting device mounting substrates and packages |
US12/484,713 Active US7906793B2 (en) | 2004-10-25 | 2009-06-15 | Solid metal block semiconductor light emitting device mounting substrates |
US13/074,942 Abandoned US20110210360A1 (en) | 2004-10-25 | 2011-03-29 | Transmissive optical elements including phosphor patterns therein |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/363,000 Active 2026-10-29 US8598606B2 (en) | 2004-10-25 | 2009-01-30 | Solid metal block semiconductor light emitting device mounting substrates and packages |
US12/484,713 Active US7906793B2 (en) | 2004-10-25 | 2009-06-15 | Solid metal block semiconductor light emitting device mounting substrates |
US13/074,942 Abandoned US20110210360A1 (en) | 2004-10-25 | 2011-03-29 | Transmissive optical elements including phosphor patterns therein |
Country Status (8)
Country | Link |
---|---|
US (4) | US20060097385A1 (en) |
EP (2) | EP1805807A2 (en) |
JP (2) | JP2008518461A (en) |
KR (1) | KR101203818B1 (en) |
CN (1) | CN101048880A (en) |
AU (1) | AU2005300077A1 (en) |
TW (2) | TWI460877B (en) |
WO (1) | WO2006046981A2 (en) |
Cited By (147)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060091788A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US20060091416A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US20060094137A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
US20060091415A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
US20060279962A1 (en) * | 2005-06-14 | 2006-12-14 | Loh Ban P | LED backlighting for displays |
US20060292747A1 (en) * | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
US20070108599A1 (en) * | 2005-11-15 | 2007-05-17 | Samsung Electronics Co., Ltd. | Semiconductor chip package with a metal substrate and semiconductor module having the same |
US20070200127A1 (en) * | 2003-05-27 | 2007-08-30 | Andrews Peter S | Power surface mount light emitting die package |
US20070241357A1 (en) * | 2004-10-29 | 2007-10-18 | Ledengin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US20080007953A1 (en) * | 2005-06-10 | 2008-01-10 | Cree, Inc. | High power solid-state lamp |
US20080030993A1 (en) * | 2004-05-05 | 2008-02-07 | Nadarajah Narendran | High Efficiency Light Source Using Solid-State Emitter and Down-Conversion Material |
US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
WO2008027093A2 (en) * | 2006-08-31 | 2008-03-06 | Rensselaer Polytechnic Institute | High-efficiency light- emitting apparatus using light emitting diodes |
US20080078524A1 (en) * | 2006-09-30 | 2008-04-03 | Ruud Lighting, Inc. | Modular LED Units |
US20080080196A1 (en) * | 2006-09-30 | 2008-04-03 | Ruud Lighting, Inc. | LED Floodlight Fixture |
US20080094829A1 (en) * | 2004-05-05 | 2008-04-24 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US20080105887A1 (en) * | 2005-06-23 | 2008-05-08 | Nadarajah Narendran | Package Design for Producing White Light With Short-Wavelength Leds and Down-Conversion Materials |
WO2008060335A1 (en) * | 2006-11-17 | 2008-05-22 | Rensselaer Polytechnic Institute | High-power white leds and manufacturing method thereof |
US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
US20080179612A1 (en) * | 2006-03-03 | 2008-07-31 | Kyung Ho Shin | Light-Emitting Diode Package and Manufacturing Method Thereof |
CN100433391C (en) * | 2006-11-30 | 2008-11-12 | 何永祥 | A large power LED using porous metal material as heat emission device |
US20080283864A1 (en) * | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
US20090026908A1 (en) * | 2006-01-24 | 2009-01-29 | Koninklijke Philips Electronics N.V. | Light-emitting device |
US20090039382A1 (en) * | 2007-08-10 | 2009-02-12 | Iintematix Technology Center Corp. | Light emitting diode package structure |
US20090052158A1 (en) * | 2007-08-23 | 2009-02-26 | Philips Lumileds Lighting Company, Llc | Light Source Including Reflective Wavelength-Converting Layer |
US20090059594A1 (en) * | 2007-08-31 | 2009-03-05 | Ming-Feng Lin | Heat dissipating apparatus for automotive LED lamp |
US20090078948A1 (en) * | 2004-11-18 | 2009-03-26 | Koninklijke Philips Electronics, N.V. | Illuminator and method for producing such illuminator |
US20090121244A1 (en) * | 2007-11-08 | 2009-05-14 | Steven Lo | LED packaging structure and production method thereof |
US20090134421A1 (en) * | 2004-10-25 | 2009-05-28 | Cree, Inc. | Solid metal block semiconductor light emitting device mounting substrates and packages |
US20090146158A1 (en) * | 2004-12-17 | 2009-06-11 | Jun Seok Park | Package for Light Emitting Device and Method for Packaging the Same |
US20090224653A1 (en) * | 2008-03-07 | 2009-09-10 | Bily Wang | LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same |
US20090252950A1 (en) * | 2008-04-04 | 2009-10-08 | Hong Kong Applied Science And Technology Research Institute | Alumina substrate and method of making an alumina substrate |
US20100001300A1 (en) * | 2008-06-25 | 2010-01-07 | Soraa, Inc. | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs |
US20100038666A1 (en) * | 2006-12-29 | 2010-02-18 | Stefan Groetsch | Lens Arrangement and LED Display Device |
US20100079994A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Multi-cup led assembly |
US20100091499A1 (en) * | 2008-10-14 | 2010-04-15 | Ledengin, Inc. | Total Internal Reflection Lens and Mechanical Retention and Locating Device |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
US20100124243A1 (en) * | 2008-11-18 | 2010-05-20 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same |
US20100155755A1 (en) * | 2008-12-24 | 2010-06-24 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US20100259924A1 (en) * | 2009-04-08 | 2010-10-14 | Ledengin, Inc. | Lighting Apparatus Having Multiple Light-Emitting Diodes With Individual Light-Conversion Layers |
US20100258827A1 (en) * | 2009-04-09 | 2010-10-14 | Lextar Electronics Corp. | Light-emitting diode package and wafer-level packaging process of light-emitting diode |
US20100301372A1 (en) * | 2003-05-27 | 2010-12-02 | Cree, Inc. | Power surface mount light emitting die package |
US20100320487A1 (en) * | 2010-08-30 | 2010-12-23 | Rene Peter Helbing | Light-emitting device array with individual cells |
US20100320486A1 (en) * | 2010-08-30 | 2010-12-23 | Rene Peter Helbing | Light-emitting device array with individual cells |
US20110069474A1 (en) * | 2008-05-30 | 2011-03-24 | Bridgelux, Inc. | Method and Apparatus for Generating White Light from Solid State Light Emitting Devices |
US20110149581A1 (en) * | 2009-12-17 | 2011-06-23 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
WO2011079387A1 (en) * | 2009-12-30 | 2011-07-07 | Lumenpulse Lighting Inc. | High powered light emitting diode lighting unit |
US7980731B2 (en) | 2006-05-30 | 2011-07-19 | Fujikura Ltd. | Light-emitting element mounting substrate, light source, lighting device, display device, traffic signal, and method of manufacturing light-emitting element mounting substrate |
US20110180925A1 (en) * | 2010-01-26 | 2011-07-28 | Qualcomm Incorporated | Microfabricated Pillar Fins For Thermal Management |
US20110186874A1 (en) * | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US20110215697A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp with active cooling element |
US20110215698A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp with active cooling element |
US20110215345A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Solid state lamp with thermal spreading elements and light directing optics |
US20110215701A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp incorporating remote phosphor with heat dissipation features |
US20110215699A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Solid state lamp and bulb |
US20110215355A1 (en) * | 2010-03-08 | 2011-09-08 | Van De Ven Antony P | Photonic crystal phosphor light conversion structures for light emitting devices |
US20110227102A1 (en) * | 2010-03-03 | 2011-09-22 | Cree, Inc. | High efficacy led lamp with remote phosphor and diffuser configuration |
US20110235306A1 (en) * | 2010-03-25 | 2011-09-29 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
US20120012156A1 (en) * | 2009-07-20 | 2012-01-19 | Ryan Linderman | Optoelectronic device with heat spreader unit |
US20120032200A1 (en) * | 2009-03-30 | 2012-02-09 | Sung Hoon Kwon | Method for coating light-emitting devices, light coupler, and method for manufacturing the light coupler |
US20120104447A1 (en) * | 2008-05-23 | 2012-05-03 | Kim Geun Ho | Light emitting device package |
US20120235190A1 (en) * | 2011-03-18 | 2012-09-20 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
US20120235201A1 (en) * | 2009-09-11 | 2012-09-20 | Soraa, Inc. | System and method for led packaging |
US8324641B2 (en) | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
CN102832313A (en) * | 2011-06-13 | 2012-12-19 | 隆达电子股份有限公司 | Heat dissipation packaging unit and support structure thereof |
US8384097B2 (en) | 2009-04-08 | 2013-02-26 | Ledengin, Inc. | Package for multiple light emitting diodes |
US20130062653A1 (en) * | 2009-12-26 | 2013-03-14 | Achrolux Inc. | Methods for packaging light emitting devices and related microelectronic devices |
US20130126922A1 (en) * | 2011-11-21 | 2013-05-23 | Foxsemicon Integrated Technology, Inc. | Light emitting diode incorporating light converting material |
US8450929B2 (en) | 2010-06-28 | 2013-05-28 | Panasonic Corporation | Light emitting device, backlight unit, liquid crystal display apparatus, and lighting apparatus |
EP2056364A4 (en) * | 2006-08-11 | 2013-07-24 | Mitsubishi Chem Corp | Illuminating apparatus |
US20130221826A1 (en) * | 2010-09-21 | 2013-08-29 | Nec Corporation | Phosphor-coated light-emitting device |
US8529104B2 (en) | 2006-05-23 | 2013-09-10 | Cree, Inc. | Lighting device |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US20130258713A1 (en) * | 2012-03-27 | 2013-10-03 | Shenzhen China Star Optoelectronics Technology Co. ,LTD. | Backlight Module, LCD Device and Light Source of Backlight Module |
US8563849B2 (en) | 2010-08-03 | 2013-10-22 | Sunpower Corporation | Diode and heat spreader for solar module |
US8562161B2 (en) | 2010-03-03 | 2013-10-22 | Cree, Inc. | LED based pedestal-type lighting structure |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
US8598793B2 (en) | 2011-05-12 | 2013-12-03 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
US8636198B1 (en) | 2012-09-28 | 2014-01-28 | Sunpower Corporation | Methods and structures for forming and improving solder joint thickness and planarity control features for solar cells |
US20140055989A1 (en) * | 2010-08-10 | 2014-02-27 | Relume Technologies, Inc. | L.e.d. light emitting assembly with composite heat sink |
US20140145221A1 (en) * | 2012-11-23 | 2014-05-29 | Helio Optoelectronics Corporation | Led lamp structure with heat sink |
US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
US20140268810A1 (en) * | 2013-03-15 | 2014-09-18 | Abl Ip Holding Llc | Optic for a Light Source |
US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US8882284B2 (en) | 2010-03-03 | 2014-11-11 | Cree, Inc. | LED lamp or bulb with remote phosphor and diffuser configuration with enhanced scattering properties |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8894251B2 (en) | 2010-07-05 | 2014-11-25 | Panasonic Corporation | Lighting device topology for reducing unevenness in LED luminance and color |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9024517B2 (en) | 2010-03-03 | 2015-05-05 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration utilizing red emitters |
US9028087B2 (en) | 2006-09-30 | 2015-05-12 | Cree, Inc. | LED light fixture |
US9046227B2 (en) | 2009-09-18 | 2015-06-02 | Soraa, Inc. | LED lamps with improved quality of light |
US9052416B2 (en) | 2008-11-18 | 2015-06-09 | Cree, Inc. | Ultra-high efficacy semiconductor light emitting devices |
US9057511B2 (en) | 2010-03-03 | 2015-06-16 | Cree, Inc. | High efficiency solid state lamp and bulb |
US9068701B2 (en) | 2012-01-26 | 2015-06-30 | Cree, Inc. | Lamp structure with remote LED light source |
US20150194576A1 (en) * | 2011-03-06 | 2015-07-09 | Mordehai MARGALIT | Light Emitting Diode Package and Method of Manufacture |
US9080729B2 (en) | 2010-04-08 | 2015-07-14 | Ledengin, Inc. | Multiple-LED emitter for A-19 lamps |
USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US20150325764A1 (en) * | 2012-09-08 | 2015-11-12 | Lumichip Limited | LED chip-on-board component and lighting module |
US9234655B2 (en) | 2011-02-07 | 2016-01-12 | Cree, Inc. | Lamp with remote LED light source and heat dissipating elements |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
US9243794B2 (en) | 2006-09-30 | 2016-01-26 | Cree, Inc. | LED light fixture with fluid flow to and from the heat sink |
US20160027709A1 (en) * | 2013-04-24 | 2016-01-28 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
US20160049342A1 (en) * | 2013-04-29 | 2016-02-18 | Abb Technology Ag | Module Arrangement For Power Semiconductor Devices |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US9310030B2 (en) | 2010-03-03 | 2016-04-12 | Cree, Inc. | Non-uniform diffuser to scatter light into uniform emission pattern |
US9316361B2 (en) | 2010-03-03 | 2016-04-19 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration |
US9345095B2 (en) | 2010-04-08 | 2016-05-17 | Ledengin, Inc. | Tunable multi-LED emitter module |
US9356200B2 (en) * | 2013-06-27 | 2016-05-31 | LG Inntotek Co., Ltd. | Light emitting device package |
US9406654B2 (en) | 2014-01-27 | 2016-08-02 | Ledengin, Inc. | Package for high-power LED devices |
US20160223184A1 (en) * | 2013-09-25 | 2016-08-04 | Iwasaki Electric Co., Ltd. | Lamp |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US9461024B2 (en) | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
US9528665B2 (en) | 2011-05-12 | 2016-12-27 | Ledengin, Inc. | Phosphors for warm white emitters |
US9541246B2 (en) | 2006-09-30 | 2017-01-10 | Cree, Inc. | Aerodynamic LED light fixture |
US20170009975A1 (en) * | 2015-07-06 | 2017-01-12 | Lg Electronics Inc. | Light source module, fabrication method therefor, and lighting device including the same |
US20170012178A1 (en) * | 2009-09-11 | 2017-01-12 | Rohm Co., Ltd. | Light emitting device |
US20170031115A1 (en) * | 2015-07-29 | 2017-02-02 | Corning Optical Communications LLC | Wafer-level integrated opto-electronic module |
US9642206B2 (en) | 2014-11-26 | 2017-05-02 | Ledengin, Inc. | Compact emitter for warm dimming and color tunable lamp |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9818919B2 (en) | 2012-06-11 | 2017-11-14 | Cree, Inc. | LED package with multiple element light source and encapsulant having planar surfaces |
US9887327B2 (en) | 2012-06-11 | 2018-02-06 | Cree, Inc. | LED package with encapsulant having curved and planar surfaces |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US10062822B1 (en) * | 2017-12-01 | 2018-08-28 | Lite-On Singapore Pte. Ltd. | Light-emitting diode package structure with an improved structure, light-emitting device using the same, and method of making the same |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
US10495268B1 (en) * | 2014-10-31 | 2019-12-03 | The Regents Of The University Of California | High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors |
US10575374B2 (en) | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
US20200063934A1 (en) * | 2015-02-23 | 2020-02-27 | Toshiba Lighting & Technology Corporation | Vehicle Lighting Device and Vehicle Lamp |
US10957830B2 (en) | 2011-06-24 | 2021-03-23 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
US11032884B2 (en) | 2012-03-02 | 2021-06-08 | Ledengin, Inc. | Method for making tunable multi-led emitter module |
CN113054042A (en) * | 2021-03-15 | 2021-06-29 | 河南城建学院 | Optoelectronic semiconductor component with substrate structure |
US20210336098A1 (en) * | 2020-04-24 | 2021-10-28 | Nichia Corporation | Light-emitting device and method of manufacturing the light-emitting device |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
Families Citing this family (151)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US7675145B2 (en) | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
US8497560B2 (en) * | 2006-10-06 | 2013-07-30 | Industrial Technology Research Institute | LED package and method of assembling the same |
US9711703B2 (en) | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
TW200847469A (en) * | 2007-05-23 | 2008-12-01 | Tysun Inc | Substrates of curved surface for light emitting diodes |
KR100888228B1 (en) * | 2007-06-22 | 2009-03-12 | (주)웨이브닉스이에스피 | Metal-Based Photonic Device Package Module and Process of The Same |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
US9754926B2 (en) | 2011-01-31 | 2017-09-05 | Cree, Inc. | Light emitting diode (LED) arrays including direct die attach and related assemblies |
US9660153B2 (en) | 2007-11-14 | 2017-05-23 | Cree, Inc. | Gap engineering for flip-chip mounted horizontal LEDs |
US9640737B2 (en) | 2011-01-31 | 2017-05-02 | Cree, Inc. | Horizontal light emitting diodes including phosphor particles |
TW200941761A (en) * | 2008-03-27 | 2009-10-01 | Liung Feng Ind Co Ltd | Packaging process of a light emitting component |
CN101552311B (en) * | 2008-04-03 | 2011-11-30 | 良峰塑胶机械股份有限公司 | Package process of light emitting element |
CN101598312A (en) * | 2008-06-06 | 2009-12-09 | 富准精密工业(深圳)有限公司 | Light emitting diode construction |
TW201000819A (en) * | 2008-06-30 | 2010-01-01 | Create Electronic Optical Co Ltd | LED illumination device |
US7728399B2 (en) * | 2008-07-22 | 2010-06-01 | National Semiconductor Corporation | Molded optical package with fiber coupling feature |
US9076951B2 (en) | 2008-08-26 | 2015-07-07 | Albeo Technologies, Inc. | Methods of integrating LED chips with heat sinks, and LED-based lighting assemblies made thereby |
US8981629B2 (en) * | 2008-08-26 | 2015-03-17 | Albeo Technologies, Inc. | Methods of integrating LED chips with heat sinks, and LED-based lighting assemblies made thereby |
JP4881358B2 (en) | 2008-08-28 | 2012-02-22 | 株式会社東芝 | Light emitting device |
TW201011936A (en) * | 2008-09-05 | 2010-03-16 | Advanced Optoelectronic Tech | Light emitting device and fabrication thereof |
US8188486B2 (en) * | 2008-09-16 | 2012-05-29 | Osram Sylvania Inc. | Optical disk for lighting module |
WO2010059748A1 (en) * | 2008-11-18 | 2010-05-27 | Ringdale, Inc. | Led light source assembly with heat sink and heat conductive glass cover |
US8368112B2 (en) | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
JP2010171270A (en) * | 2009-01-23 | 2010-08-05 | Denka Agsp Kk | Substrate for mounting light-emitting element and method of manufacturing the same |
KR101063997B1 (en) | 2009-02-18 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting device package and manufacturing method thereof |
US8089085B2 (en) * | 2009-02-26 | 2012-01-03 | Bridgelux, Inc. | Heat sink base for LEDS |
US8348460B2 (en) | 2009-05-01 | 2013-01-08 | Abl Ip Holding Llc | Lighting apparatus with several light units arranged in a heatsink |
JP2010267826A (en) * | 2009-05-15 | 2010-11-25 | Rohm Co Ltd | Led lighting system and liquid crystal display device |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
KR101027422B1 (en) * | 2009-06-08 | 2011-04-11 | 주식회사 이그잭스 | LED array board |
KR101172709B1 (en) | 2009-06-24 | 2012-08-09 | 주식회사 이그잭스 | a LED array board and a preparing method therefor |
WO2011022936A1 (en) * | 2009-08-23 | 2011-03-03 | Peng Yuntao | Combined high power led lamp |
KR101125296B1 (en) * | 2009-10-21 | 2012-03-27 | 엘지이노텍 주식회사 | Light unit |
US8502257B2 (en) | 2009-11-05 | 2013-08-06 | Visera Technologies Company Limited | Light-emitting diode package |
US8304644B2 (en) | 2009-11-20 | 2012-11-06 | Sunpower Corporation | Device and method for solar power generation |
US8809671B2 (en) | 2009-12-08 | 2014-08-19 | Sunpower Corporation | Optoelectronic device with bypass diode |
TW201124068A (en) * | 2009-12-29 | 2011-07-01 | Ying-Tong Chen | Heat dissipating unit having antioxidant nano-film and its method of depositing antioxidant nano-film. |
CN102194961A (en) * | 2010-03-04 | 2011-09-21 | 展晶科技(深圳)有限公司 | Semiconductor light-emitting component packaging structure |
JP2011204888A (en) * | 2010-03-25 | 2011-10-13 | Panasonic Corp | Light-emitting device and backlight module using the same |
JP5522462B2 (en) * | 2010-04-20 | 2014-06-18 | 東芝ライテック株式会社 | Light emitting device and lighting device |
US9048392B2 (en) * | 2010-04-23 | 2015-06-02 | Cree, Inc. | Light emitting device array assemblies and related methods |
US9911882B2 (en) | 2010-06-24 | 2018-03-06 | Sunpower Corporation | Passive flow accelerator |
JP2012015148A (en) * | 2010-06-29 | 2012-01-19 | Rohm Co Ltd | Led module and led lighting system |
US8604404B1 (en) | 2010-07-01 | 2013-12-10 | Sunpower Corporation | Thermal tracking for solar systems |
JP2012015466A (en) * | 2010-07-05 | 2012-01-19 | Panasonic Electric Works Co Ltd | Light emitting device |
US9897346B2 (en) | 2010-08-03 | 2018-02-20 | Sunpower Corporation | Opposing row linear concentrator architecture |
US8336539B2 (en) | 2010-08-03 | 2012-12-25 | Sunpower Corporation | Opposing row linear concentrator architecture |
CN101958393A (en) * | 2010-08-06 | 2011-01-26 | 敬俊 | Light-emitting semiconductor module structure and manufacturing method thereof |
DE102010045783A1 (en) * | 2010-09-17 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Carrier substrate for an optoelectronic component, method for its production and optoelectronic component |
JP2012069589A (en) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | Light-emitting device |
US8803452B2 (en) | 2010-10-08 | 2014-08-12 | Soraa, Inc. | High intensity light source |
JP5320374B2 (en) * | 2010-11-09 | 2013-10-23 | 株式会社東芝 | Method for manufacturing light emitting device |
US9246037B2 (en) | 2010-12-03 | 2016-01-26 | Sunpower Corporation | Folded fin heat sink |
KR101883839B1 (en) * | 2010-12-07 | 2018-08-30 | 엘지이노텍 주식회사 | Light emitting device module and bcklight unit including the same |
CN102537761A (en) * | 2010-12-15 | 2012-07-04 | 奇美电子股份有限公司 | Direct type light-emitting diode (LED) light source |
US8839784B2 (en) | 2010-12-22 | 2014-09-23 | Sunpower Corporation | Locating connectors and methods for mounting solar hardware |
US8893713B2 (en) | 2010-12-22 | 2014-11-25 | Sunpower Corporation | Locating connectors and methods for mounting solar hardware |
TW201227920A (en) * | 2010-12-31 | 2012-07-01 | Siliconware Precision Industries Co Ltd | LED package substrate and fabrication method thereof |
KR20120082192A (en) * | 2011-01-13 | 2012-07-23 | 삼성엘이디 주식회사 | Light emitting device package |
TWI449138B (en) * | 2011-01-19 | 2014-08-11 | Subtron Technology Co Ltd | Package carrier |
US9673363B2 (en) * | 2011-01-31 | 2017-06-06 | Cree, Inc. | Reflective mounting substrates for flip-chip mounted horizontal LEDs |
US8525396B2 (en) * | 2011-02-11 | 2013-09-03 | Soraa, Inc. | Illumination source with direct die placement |
US10036544B1 (en) | 2011-02-11 | 2018-07-31 | Soraa, Inc. | Illumination source with reduced weight |
US8643257B2 (en) * | 2011-02-11 | 2014-02-04 | Soraa, Inc. | Illumination source with reduced inner core size |
US8618742B2 (en) * | 2011-02-11 | 2013-12-31 | Soraa, Inc. | Illumination source and manufacturing methods |
US8324835B2 (en) * | 2011-02-11 | 2012-12-04 | Soraa, Inc. | Modular LED lamp and manufacturing methods |
TW201236225A (en) * | 2011-02-18 | 2012-09-01 | Chi Mei Lighting Tech Corp | Light-emitting diode device and method for manufacturing the same |
TWI464929B (en) * | 2011-03-16 | 2014-12-11 | Lextar Electronics Corp | Light source module with enhanced heat dissipation efficiency and embedded package structure thereof |
DE102011006643A1 (en) * | 2011-04-01 | 2012-10-04 | Osram Ag | Optical element and lighting device |
DE102011017580B4 (en) | 2011-04-27 | 2023-04-06 | Zumtobel Lighting Gmbh | lamp |
TWI435030B (en) * | 2011-05-06 | 2014-04-21 | Univ Nat Central | Highly directional light source device |
JP5828068B2 (en) * | 2011-06-17 | 2015-12-02 | パナソニックIpマネジメント株式会社 | LED unit |
US8480267B2 (en) * | 2011-06-28 | 2013-07-09 | Osram Sylvania Inc. | LED lighting apparatus, systems and methods of manufacture |
US9038421B2 (en) | 2011-07-01 | 2015-05-26 | Sunpower Corporation | Glass-bending apparatus and method |
US9845943B2 (en) * | 2011-07-22 | 2017-12-19 | Guardian Glass, LLC | Heat management subsystems for LED lighting systems, LED lighting systems including heat management subsystems, and/or methods of making the same |
JP2013030598A (en) * | 2011-07-28 | 2013-02-07 | Sumitomo Bakelite Co Ltd | Heat generation device |
TWI484672B (en) * | 2011-08-29 | 2015-05-11 | Genesis Photonics Inc | Light emitting diode structure and fabricating method thereof |
KR101880058B1 (en) * | 2011-08-30 | 2018-07-20 | 엘지이노텍 주식회사 | Light emitting device package and lighting apparatus having the same |
US9109760B2 (en) | 2011-09-02 | 2015-08-18 | Soraa, Inc. | Accessories for LED lamps |
US20130069218A1 (en) * | 2011-09-20 | 2013-03-21 | Stmicroelectronics Asia Pacific Pte Ltd. | High density package interconnect with copper heat spreader and method of making the same |
US8796535B2 (en) | 2011-09-30 | 2014-08-05 | Sunpower Corporation | Thermal tracking for solar systems |
US8884517B1 (en) | 2011-10-17 | 2014-11-11 | Soraa, Inc. | Illumination sources with thermally-isolated electronics |
CN102347438B (en) * | 2011-10-29 | 2013-06-05 | 华南师范大学 | Light-emitting diode illumination device using diamond powder-copper powder composite material to radiate heat |
CN102403418A (en) * | 2011-11-09 | 2012-04-04 | 东莞勤上光电股份有限公司 | Manufacturing method of high-power LED radiating structure |
US8617927B1 (en) | 2011-11-29 | 2013-12-31 | Hrl Laboratories, Llc | Method of mounting electronic chips |
CN104081545A (en) * | 2011-12-01 | 2014-10-01 | 夸克星有限责任公司 | Solid-state lighting device and method of manufacturing same |
WO2013085024A1 (en) * | 2011-12-07 | 2013-06-13 | 株式会社神戸製鋼所 | Led lighting heat sink and method for manufacturing same |
CN104066319B (en) | 2011-12-14 | 2017-09-05 | 万斯创新公司 | aquaculture lighting device and method |
US9035168B2 (en) | 2011-12-21 | 2015-05-19 | Sunpower Corporation | Support for solar energy collectors |
US8528366B2 (en) | 2011-12-22 | 2013-09-10 | Sunpower Corporation | Heat-regulating glass bending apparatus and method |
US9151457B2 (en) | 2012-02-03 | 2015-10-06 | Cree, Inc. | Lighting device and method of installing light emitter |
US9151477B2 (en) | 2012-02-03 | 2015-10-06 | Cree, Inc. | Lighting device and method of installing light emitter |
JP5992695B2 (en) * | 2012-02-29 | 2016-09-14 | スタンレー電気株式会社 | Semiconductor light emitting element array and vehicle lamp |
US9310038B2 (en) | 2012-03-23 | 2016-04-12 | Cree, Inc. | LED fixture with integrated driver circuitry |
US10054274B2 (en) | 2012-03-23 | 2018-08-21 | Cree, Inc. | Direct attach ceiling-mounted solid state downlights |
US9397611B2 (en) | 2012-03-27 | 2016-07-19 | Sunpower Corporation | Photovoltaic systems with local maximum power point tracking prevention and methods for operating same |
US9496197B1 (en) | 2012-04-20 | 2016-11-15 | Hrl Laboratories, Llc | Near junction cooling for GaN devices |
DE102012104035A1 (en) * | 2012-05-08 | 2013-11-14 | Osram Opto Semiconductors Gmbh | Method for manufacturing conversion layer utilized for conversion of electrically generated data into light emission, involves partially applying particles on mounting surface and maintaining main surfaces of chip remain free from particles |
US9995439B1 (en) | 2012-05-14 | 2018-06-12 | Soraa, Inc. | Glare reduced compact lens for high intensity light source |
US10436422B1 (en) | 2012-05-14 | 2019-10-08 | Soraa, Inc. | Multi-function active accessories for LED lamps |
US9360190B1 (en) | 2012-05-14 | 2016-06-07 | Soraa, Inc. | Compact lens for high intensity light source |
US9310052B1 (en) | 2012-09-28 | 2016-04-12 | Soraa, Inc. | Compact lens for high intensity light source |
JP6179516B2 (en) | 2012-08-02 | 2017-08-16 | 日亜化学工業株式会社 | Wavelength converter |
US9215764B1 (en) | 2012-11-09 | 2015-12-15 | Soraa, Inc. | High-temperature ultra-low ripple multi-stage LED driver and LED control circuits |
TWM450828U (en) * | 2012-12-14 | 2013-04-11 | Litup Technology Co Ltd | LED module with separate heat-dissipation and electrical conduction paths, and related heat dissipation board |
US9602807B2 (en) | 2012-12-19 | 2017-03-21 | Microsoft Technology Licensing, Llc | Single frequency time of flight de-aliasing |
TWI573245B (en) * | 2012-12-24 | 2017-03-01 | 鴻海精密工業股份有限公司 | Light emitting diode light bar |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
US9267661B1 (en) | 2013-03-01 | 2016-02-23 | Soraa, Inc. | Apportioning optical projection paths in an LED lamp |
US9435525B1 (en) | 2013-03-08 | 2016-09-06 | Soraa, Inc. | Multi-part heat exchanger for LED lamps |
WO2014160470A2 (en) * | 2013-03-13 | 2014-10-02 | Albeo Technologies, Inc. | Methods of integrating led chips with heat sinks, and led-based lighting assemblies made thereby |
US10079160B1 (en) | 2013-06-21 | 2018-09-18 | Hrl Laboratories, Llc | Surface mount package for semiconductor devices with embedded heat spreaders |
JP6265055B2 (en) * | 2014-01-14 | 2018-01-24 | ソニー株式会社 | LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND LIGHTING DEVICE |
CN104157775A (en) * | 2014-06-17 | 2014-11-19 | 京东方光科技有限公司 | LED lighting device and packaging method |
US9601670B2 (en) | 2014-07-11 | 2017-03-21 | Cree, Inc. | Method to form primary optic with variable shapes and/or geometries without a substrate |
CN104134740B (en) * | 2014-07-15 | 2017-01-25 | 华南理工大学 | Structurally integrated LED (Light Emitting Diode) packaging structure |
US9554562B2 (en) | 2014-08-07 | 2017-01-31 | Once Innovations, Inc. | Lighting system and control for experimenting in aquaculture |
TWI623117B (en) * | 2014-08-20 | 2018-05-01 | 鴻海精密工業股份有限公司 | Led encapsulation structure |
US10622522B2 (en) | 2014-09-05 | 2020-04-14 | Theodore Lowes | LED packages with chips having insulated surfaces |
US9337124B1 (en) | 2014-11-04 | 2016-05-10 | Hrl Laboratories, Llc | Method of integration of wafer level heat spreaders and backside interconnects on microelectronics wafers |
DE102015000063A1 (en) * | 2015-01-12 | 2016-07-14 | Micronas Gmbh | IC package |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
CA2979520C (en) * | 2015-02-16 | 2020-12-01 | Mitsubishi Electric Corporation | Semiconductor laser light source device, semiconductor laser light source system, and image display aparatus |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
US9385083B1 (en) | 2015-05-22 | 2016-07-05 | Hrl Laboratories, Llc | Wafer-level die to package and die to die interconnects suspended over integrated heat sinks |
FR3036918B1 (en) * | 2015-05-29 | 2018-08-10 | Thales | ELECTRONIC CARD AND METHOD OF MANUFACTURING THE SAME |
US10629513B2 (en) * | 2015-06-04 | 2020-04-21 | Eaton Intelligent Power Limited | Ceramic plated materials for electrical isolation and thermal transfer |
US10012354B2 (en) | 2015-06-26 | 2018-07-03 | Cree, Inc. | Adjustable retrofit LED troffer |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
CN110416382B (en) * | 2015-07-21 | 2023-03-31 | 福建天电光电有限公司 | Packaging method of LED light source |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
US10026672B1 (en) | 2015-10-21 | 2018-07-17 | Hrl Laboratories, Llc | Recursive metal embedded chip assembly |
US9508652B1 (en) | 2015-11-24 | 2016-11-29 | Hrl Laboratories, Llc | Direct IC-to-package wafer level packaging with integrated thermal heat spreaders |
WO2017131719A1 (en) * | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc. | Zoned optical cup |
US11044895B2 (en) | 2016-05-11 | 2021-06-29 | Signify North America Corporation | System and method for promoting survival rate in larvae |
CN106300006A (en) * | 2016-10-13 | 2017-01-04 | 中国科学院半导体研究所 | A kind of heat sink for chip of laser array package |
KR102369188B1 (en) * | 2017-07-26 | 2022-03-02 | 엘지전자 주식회사 | Display device using semiconductor light emitting device |
TWI688118B (en) * | 2017-09-29 | 2020-03-11 | 李宜臻 | Metal-ceramic lead frame structure and method for manufacturing thereof and led by using thereof |
WO2020095481A1 (en) * | 2018-11-08 | 2020-05-14 | 京セラ株式会社 | Light-emitting element accommodating substrate and light-emitting device |
US11145689B2 (en) * | 2018-11-29 | 2021-10-12 | Creeled, Inc. | Indicia for light emitting diode chips |
US10950562B1 (en) | 2018-11-30 | 2021-03-16 | Hrl Laboratories, Llc | Impedance-matched through-wafer transition using integrated heat-spreader technology |
KR102112327B1 (en) * | 2018-12-04 | 2020-05-18 | 주식회사 엠디엠 | Method for manufacturing electronic circuit on a surface of three-dimensional structure |
WO2021258006A1 (en) * | 2020-06-18 | 2021-12-23 | Myotek Industries | Multi-injection molded optical grade silicone lens and method for producing incorporating a glow in the dark phosphor material |
CN112420903B (en) * | 2021-01-22 | 2022-04-29 | 山东元旭光电股份有限公司 | Packaging structure of light-emitting device |
US11962129B2 (en) * | 2021-04-09 | 2024-04-16 | Lawrence Livermore National Security, Llc | Systems and methods for laser diode array having integrated microchannel cooling |
CN117678083A (en) * | 2021-05-28 | 2024-03-08 | 康宁公司 | Substrate for heat dissipation of LED display |
US20230142729A1 (en) * | 2021-11-08 | 2023-05-11 | Analog Devices, Inc. | Integrated device package with an integrated heat sink |
Citations (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4042552A (en) * | 1972-09-19 | 1977-08-16 | Warner-Lambert Company | Composition for hydrophilic lens blank and method of casting |
US4107238A (en) * | 1976-01-22 | 1978-08-15 | Exxon Research & Engineering Co. | Graft copolymerization process |
US4141941A (en) * | 1977-09-21 | 1979-02-27 | American Optical Corporation | Contact lens casting method |
US4650922A (en) * | 1985-03-11 | 1987-03-17 | Texas Instruments Incorporated | Thermally matched mounting substrate |
US4826424A (en) * | 1985-09-25 | 1989-05-02 | Canon Kabushiki Kaisha | Lens barrel made by injection molding |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4935665A (en) * | 1987-12-24 | 1990-06-19 | Mitsubishi Cable Industries Ltd. | Light emitting diode lamp |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5024966A (en) * | 1988-12-21 | 1991-06-18 | At&T Bell Laboratories | Method of forming a silicon-based semiconductor optical device mount |
US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5087949A (en) * | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US5110278A (en) * | 1990-11-30 | 1992-05-05 | Pilkington Visioncare, Inc. | Injection molding apparatus for producing a toric lens casting mold arbor |
US5143660A (en) * | 1988-11-02 | 1992-09-01 | National Research Development Corporation | Method of casting a contact lens |
US5166815A (en) * | 1991-02-28 | 1992-11-24 | Novatel Communications, Ltd. | Liquid crystal display and reflective diffuser therefor including a reflection cavity section and an illumination cavity section |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5277840A (en) * | 1988-03-16 | 1994-01-11 | Mitsubishi Rayon Co., Ltd. | Phosphor paste compositions and phosphor coatings obtained therefrom |
US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5669486A (en) * | 1995-08-07 | 1997-09-23 | Fuji Polymeritech Co., Ltd. | Illuminated switch |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5753730A (en) * | 1986-12-15 | 1998-05-19 | Mitsui Toatsu Chemicals, Inc. | Plastic lenses having a high-refractive index, process for the preparation thereof and casting polymerization process for preparing sulfur-containing urethane resin lens and lens prepared thereby |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US5857767A (en) * | 1996-09-23 | 1999-01-12 | Relume Corporation | Thermal management system for L.E.D. arrays |
US5858278A (en) * | 1996-02-29 | 1999-01-12 | Futaba Denshi Kogyo K.K. | Phosphor and method for producing same |
US5857797A (en) * | 1996-12-17 | 1999-01-12 | H.C. Miller Company | Loose leaf binder including an exterior picture frame |
US5882553A (en) * | 1997-06-09 | 1999-03-16 | Guide Corporation | Multi-color lens assembly injection molding process and apparatus |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US5968422A (en) * | 1997-06-30 | 1999-10-19 | Bausch & Lomb Incorporated | Injection molding process for rotationally asymmetric contact lens surfaces |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US6069440A (en) * | 1996-07-29 | 2000-05-30 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material |
US6177688B1 (en) * | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6184544B1 (en) * | 1998-01-29 | 2001-02-06 | Rohm Co., Ltd. | Semiconductor light emitting device with light reflective current diffusion layer |
US6187606B1 (en) * | 1997-10-07 | 2001-02-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure |
US6219223B1 (en) * | 1997-09-24 | 2001-04-17 | Nec Corporation | Solid electrolyte capacitor and method of producing the same |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US20020006044A1 (en) * | 2000-05-04 | 2002-01-17 | Koninklijke Philips Electronics N.V. | Assembly of a display device and an illumination system |
US6346973B1 (en) * | 1996-11-08 | 2002-02-12 | Casio Computer Co., Ltd. | Electroluminescent panel-attached electronic device |
US6373188B1 (en) * | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
US6383417B1 (en) * | 1997-12-26 | 2002-05-07 | Paulson Manufacturing Corporation | Method for injection molding a curvilinear lens |
US6391231B1 (en) * | 1998-11-23 | 2002-05-21 | Younger Mfg. Co. | Method for side-fill lens casting |
US6404125B1 (en) * | 1998-10-21 | 2002-06-11 | Sarnoff Corporation | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
US20020123164A1 (en) * | 2001-02-01 | 2002-09-05 | Slater David B. | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
US20020172354A1 (en) * | 2001-03-21 | 2002-11-21 | Kengo Nishi | Highly recyclable keypad with a key top and method of separating the same |
US20030006418A1 (en) * | 2001-05-30 | 2003-01-09 | Emerson David Todd | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US20030032212A1 (en) * | 2001-08-07 | 2003-02-13 | Bily Wang | LED focusing cup in a stacked substrate |
US6522065B1 (en) * | 2000-03-27 | 2003-02-18 | General Electric Company | Single phosphor for creating white light with high luminosity and high CRI in a UV led device |
US6521915B2 (en) * | 2000-03-14 | 2003-02-18 | Asahi Rubber Inc. | Light-emitting diode device |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
US20030067264A1 (en) * | 2001-10-09 | 2003-04-10 | Agilent Technologies, Inc. | Light-emitting diode and method for its production |
US20030080341A1 (en) * | 2001-01-24 | 2003-05-01 | Kensho Sakano | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
US6562643B2 (en) * | 2000-10-06 | 2003-05-13 | Solidlite Corporation | Packaging types of light-emitting diode |
US6576930B2 (en) * | 1996-06-26 | 2003-06-10 | Osram Opto Semiconductors Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US20030128313A1 (en) * | 2001-12-14 | 2003-07-10 | Eastman Kodak Company | Light diffusion material with color temperature correction |
US6599768B1 (en) * | 2002-08-20 | 2003-07-29 | United Epitaxy Co., Ltd. | Surface mounting method for high power light emitting diode |
US20030153861A1 (en) * | 2002-02-11 | 2003-08-14 | Royer George R. | Wound treatment bandage |
US20030173575A1 (en) * | 2000-02-15 | 2003-09-18 | Dominik Eisert | Radiation emitting semiconductor device |
US20030189830A1 (en) * | 2001-04-12 | 2003-10-09 | Masaru Sugimoto | Light source device using led, and method of producing same |
US20030189829A1 (en) * | 2001-08-09 | 2003-10-09 | Matsushita Electric Industrial Co., Ltd. | LED illumination apparatus and card-type LED illumination source |
US6639356B2 (en) * | 2002-03-28 | 2003-10-28 | Unity Opto Technology Co., Ltd. | Heat dissipating light emitting diode |
US6686609B1 (en) * | 2002-10-01 | 2004-02-03 | Ultrastar Limited | Package structure of surface mounting led and method of manufacturing the same |
US20040041757A1 (en) * | 2002-09-04 | 2004-03-04 | Ming-Hsiang Yang | Light emitting diode display module with high heat-dispersion and the substrate thereof |
US20040041222A1 (en) * | 2002-09-04 | 2004-03-04 | Loh Ban P. | Power surface mount light emitting die package |
US6707069B2 (en) * | 2001-12-24 | 2004-03-16 | Samsung Electro-Mechanics Co., Ltd | Light emission diode package |
US20040056260A1 (en) * | 2002-09-19 | 2004-03-25 | Slater David B. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US20040066556A1 (en) * | 2002-10-07 | 2004-04-08 | Eastman Kodak Company | Voided polymer film containing layered particulates |
US20040065894A1 (en) * | 2001-08-28 | 2004-04-08 | Takuma Hashimoto | Light emitting device using led |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
US20040095738A1 (en) * | 2002-11-15 | 2004-05-20 | Der-Ming Juang | Base plate for a light emitting diode chip |
US6744077B2 (en) * | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
US20040105264A1 (en) * | 2002-07-12 | 2004-06-03 | Yechezkal Spero | Multiple Light-Source Illuminating System |
US20040120155A1 (en) * | 2001-04-17 | 2004-06-24 | Ryoma Suenaga | Light-emitting apparatus |
US20040124429A1 (en) * | 2002-12-31 | 2004-07-01 | Edward Stokes | Layered phosphor coatings for led devices |
US6783362B2 (en) * | 1999-09-24 | 2004-08-31 | Cao Group, Inc. | Dental curing light using primary and secondary heat sink combination |
US6791151B2 (en) * | 2002-10-11 | 2004-09-14 | Highlink Technology Corporation | Base of optoelectronic device |
US20040211970A1 (en) * | 2003-04-24 | 2004-10-28 | Yoshiaki Hayashimoto | Semiconductor light emitting device with reflectors having cooling function |
US20050023551A1 (en) * | 2003-08-01 | 2005-02-03 | Fuji Photo Film Co., Ltd. | Light source unit |
US20050073846A1 (en) * | 2001-09-27 | 2005-04-07 | Kenji Takine | Lightemitting device and method of manufacturing the same |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US20050224830A1 (en) * | 2004-04-09 | 2005-10-13 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US20060065957A1 (en) * | 2004-09-24 | 2006-03-30 | Akihiko Hanya | Light emitting diode device |
US20070018181A1 (en) * | 2002-07-16 | 2007-01-25 | Steen Ronald L | White led headlight |
US7213940B1 (en) * | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
US7252408B2 (en) * | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
US7322732B2 (en) * | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
Family Cites Families (124)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4561004A (en) * | 1979-10-26 | 1985-12-24 | Texas Instruments | High density, electrically erasable, floating gate memory cell |
US4562018A (en) | 1985-01-28 | 1985-12-31 | Neefe Charles W | Method of casting optical surfaces on lens blanks |
US4794048A (en) | 1987-05-04 | 1988-12-27 | Allied-Signal Inc. | Ceramic coated metal substrates for electronic applications |
JPH01100175U (en) * | 1987-12-24 | 1989-07-05 | ||
CN1040810A (en) | 1988-04-30 | 1990-03-28 | 三井东圧化学株式会社 | Polysulfide base resin lens and preparation method thereof |
KR910003735B1 (en) * | 1988-12-17 | 1991-06-10 | 삼성전자 주식회사 | Thermal printing head |
JPH02229057A (en) * | 1989-03-01 | 1990-09-11 | Ricoh Co Ltd | Led array head |
NL9000161A (en) | 1990-01-23 | 1991-08-16 | Koninkl Philips Electronics Nv | SEMICONDUCTOR DEVICE CONTAINING A CARRIER AND METHOD FOR MANUFACTURING THE CARRIER. |
DE9207549U1 (en) * | 1992-06-04 | 1992-08-20 | Taiwan Liton Electronic Co., Ltd., Taipeh/T'ai-Pei, Tw | |
JP3316252B2 (en) * | 1993-04-27 | 2002-08-19 | 三洋電機株式会社 | Optical print head |
JP3315196B2 (en) * | 1993-05-24 | 2002-08-19 | 株式会社リコー | LED print head |
JPH06334167A (en) * | 1993-05-26 | 1994-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Photo-semiconductor element integrated circuit device |
JPH08156325A (en) * | 1994-12-08 | 1996-06-18 | Koudenshi Kogyo Kenkyusho:Kk | Dynamic drive type led print head |
ES2177198T3 (en) | 1995-12-29 | 2002-12-01 | Cree Inc | PIXEL PROVIDED WITH UPPER LED CONTACTS ON A FLAT AND SCREENS THAT INCLUDE IT. |
JP3264615B2 (en) | 1996-02-29 | 2002-03-11 | ホーヤ株式会社 | Plastic lens injection molding method |
JPH09293904A (en) * | 1996-04-26 | 1997-11-11 | Nichia Chem Ind Ltd | Led package |
JPH1098215A (en) * | 1996-09-24 | 1998-04-14 | Toyoda Gosei Co Ltd | Light-emitting diode device |
US5851063A (en) | 1996-10-28 | 1998-12-22 | General Electric Company | Light-emitting diode white light source |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
JP3241338B2 (en) | 1998-01-26 | 2001-12-25 | 日亜化学工業株式会社 | Semiconductor light emitting device |
JP3541709B2 (en) | 1998-02-17 | 2004-07-14 | 日亜化学工業株式会社 | Method of forming light emitting diode |
JP3490906B2 (en) | 1998-09-22 | 2004-01-26 | 日亜化学工業株式会社 | Semiconductor device and manufacturing method thereof |
WO2000019546A1 (en) | 1998-09-28 | 2000-04-06 | Koninklijke Philips Electronics N.V. | Lighting system |
JP3667125B2 (en) | 1998-12-07 | 2005-07-06 | 日亜化学工業株式会社 | Optical semiconductor device and manufacturing method thereof |
JP3613041B2 (en) | 1998-12-16 | 2005-01-26 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
US6329676B1 (en) | 1999-03-01 | 2001-12-11 | Toru Takayama | Flat panel solid state light source |
EP1059668A3 (en) | 1999-06-09 | 2007-07-18 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
JP2000353827A (en) | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
JP2000353826A (en) | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | Hybrid integrated circuit device and light irradiating device |
US6504301B1 (en) * | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
US6824294B2 (en) | 1999-09-24 | 2004-11-30 | Cao Group, Inc. | Light for use in activating light-activated materials, the light having a plurality of chips mounted in a gross well of a heat sink, and a dome covering the chips |
JP2001144334A (en) | 1999-11-17 | 2001-05-25 | Nichia Chem Ind Ltd | Optical semiconductor device and forming method therefor |
JP3685057B2 (en) | 1999-12-08 | 2005-08-17 | 日亜化学工業株式会社 | LED lamp and manufacturing method thereof |
WO2001043113A1 (en) | 1999-12-09 | 2001-06-14 | Koninklijke Philips Electronics N.V. | Display systems incorporating light-emitting diode light source |
US6517218B2 (en) * | 2000-03-31 | 2003-02-11 | Relume Corporation | LED integrated heat sink |
JP5152609B2 (en) | 2000-04-17 | 2013-02-27 | ナグラヴィジオン エスアー | System and method for securely transmitting data |
GB2361581A (en) * | 2000-04-20 | 2001-10-24 | Lite On Electronics Inc | A light emitting diode device |
EP1206802B1 (en) | 2000-05-29 | 2008-03-19 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Led-based white-light emitting lighting unit |
JP4386693B2 (en) | 2000-05-31 | 2009-12-16 | パナソニック株式会社 | LED lamp and lamp unit |
US6737801B2 (en) | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
JP3589187B2 (en) | 2000-07-31 | 2004-11-17 | 日亜化学工業株式会社 | Method for forming light emitting device |
US6355524B1 (en) * | 2000-08-15 | 2002-03-12 | Mosel Vitelic, Inc. | Nonvolatile memory structures and fabrication methods |
US6345903B1 (en) * | 2000-09-01 | 2002-02-12 | Citizen Electronics Co., Ltd. | Surface-mount type emitting diode and method of manufacturing same |
JP3636079B2 (en) | 2001-01-26 | 2005-04-06 | 日亜化学工業株式会社 | Package molded body and light emitting device |
GB2371629A (en) | 2001-01-30 | 2002-07-31 | Mark Johnson | Light diffuser of foamed polymer |
JP4066608B2 (en) | 2001-03-16 | 2008-03-26 | 日亜化学工業株式会社 | Package molded body and manufacturing method thereof |
JP3940596B2 (en) | 2001-05-24 | 2007-07-04 | 松下電器産業株式会社 | Illumination light source |
JP3736679B2 (en) | 2001-07-18 | 2006-01-18 | 日立エーアイシー株式会社 | Printed wiring board |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
JP2003110146A (en) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | Light-emitting device |
JP2003051620A (en) | 2001-08-08 | 2003-02-21 | Rohm Co Ltd | Semiconductor light-emitting device |
JP4014377B2 (en) * | 2001-09-03 | 2007-11-28 | 豊田合成株式会社 | LED lamp |
JP3645207B2 (en) | 2001-09-03 | 2005-05-11 | 日亜化学工業株式会社 | Light emitting diode |
JP4122743B2 (en) | 2001-09-19 | 2008-07-23 | 松下電工株式会社 | Light emitting device |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US7582351B2 (en) | 2001-10-25 | 2009-09-01 | Panasonic Electric Works Co., Ltd. | Composite thin film holding substrate, transparent conductive film holding substrate, and panel light emitting body |
JP4108318B2 (en) | 2001-11-13 | 2008-06-25 | シチズン電子株式会社 | Light emitting device |
JP2003163378A (en) | 2001-11-26 | 2003-06-06 | Citizen Electronics Co Ltd | Surface mount light emitting diode and its manufacturing method |
US7072096B2 (en) | 2001-12-14 | 2006-07-04 | Digital Optics International, Corporation | Uniform illumination system |
US6480389B1 (en) | 2002-01-04 | 2002-11-12 | Opto Tech Corporation | Heat dissipation structure for solid-state light emitting device package |
JP2003234509A (en) * | 2002-02-08 | 2003-08-22 | Citizen Electronics Co Ltd | Light emitting diode |
JP2003243718A (en) * | 2002-02-14 | 2003-08-29 | Matsushita Electric Works Ltd | Light emitting device |
JP4269709B2 (en) | 2002-02-19 | 2009-05-27 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
JP4023723B2 (en) | 2002-04-05 | 2007-12-19 | シチズン電子株式会社 | Surface mount type light emitting diode |
AU2003215839A1 (en) | 2002-04-25 | 2003-11-10 | Koninklijke Philips Electronics N.V. | Compact lighting system and display device |
DE10233050B4 (en) * | 2002-07-19 | 2012-06-14 | Osram Opto Semiconductors Gmbh | LED-based light source for generating light using the color mixing principle |
DE60330023D1 (en) * | 2002-08-30 | 2009-12-24 | Lumination Llc | HISTORIZED LED WITH IMPROVED EFFICIENCY |
US6747310B2 (en) * | 2002-10-07 | 2004-06-08 | Actrans System Inc. | Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
JP4294295B2 (en) | 2002-11-06 | 2009-07-08 | 株式会社小糸製作所 | Vehicle headlamp |
US7091653B2 (en) | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
JP4110524B2 (en) | 2003-03-20 | 2008-07-02 | 信越半導体株式会社 | Light emitting device and method for manufacturing light emitting device |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7095053B2 (en) * | 2003-05-05 | 2006-08-22 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
CN100511732C (en) * | 2003-06-18 | 2009-07-08 | 丰田合成株式会社 | Light emitting device |
KR101001040B1 (en) | 2003-06-30 | 2010-12-14 | 엘지디스플레이 주식회사 | Liquid crystal display module and driving apparatus thereof |
TWI233697B (en) | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
US6921927B2 (en) | 2003-08-28 | 2005-07-26 | Agilent Technologies, Inc. | System and method for enhanced LED thermal conductivity |
US7482638B2 (en) * | 2003-08-29 | 2009-01-27 | Philips Lumileds Lighting Company, Llc | Package for a semiconductor light emitting device |
US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
CN1601768A (en) * | 2003-09-22 | 2005-03-30 | 福建省苍乐电子企业有限公司 | LED structure |
JP4458804B2 (en) | 2003-10-17 | 2010-04-28 | シチズン電子株式会社 | White LED |
US6841804B1 (en) | 2003-10-27 | 2005-01-11 | Formosa Epitaxy Incorporation | Device of white light-emitting diode |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
KR100638611B1 (en) * | 2004-08-12 | 2006-10-26 | 삼성전기주식회사 | Light emitting diode having multiple lenses |
US7737459B2 (en) | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US20060124953A1 (en) | 2004-12-14 | 2006-06-15 | Negley Gerald H | Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
TWI256737B (en) | 2005-05-19 | 2006-06-11 | Pi-Fu Yang | One-block light-emitting device and manufacturing method thereof |
TWI421438B (en) | 2005-12-21 | 2014-01-01 | 克里公司 | Lighting device |
US8112921B2 (en) | 2005-12-21 | 2012-02-14 | Cree, Inc. | Sign and method for lighting |
EP2372224A3 (en) | 2005-12-21 | 2012-08-01 | Cree, Inc. | Lighting Device and Lighting Method |
JP2009527071A (en) | 2005-12-22 | 2009-07-23 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Lighting device |
KR101408622B1 (en) | 2006-01-20 | 2014-06-17 | 크리, 인코포레이티드 | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
US7852009B2 (en) | 2006-01-25 | 2010-12-14 | Cree, Inc. | Lighting device circuit with series-connected solid state light emitters and current regulator |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
TWI460880B (en) | 2006-04-18 | 2014-11-11 | Cree Inc | Lighting device and lighting method |
EP2008019B1 (en) | 2006-04-20 | 2015-08-05 | Cree, Inc. | Lighting device and lighting method |
US7722220B2 (en) | 2006-05-05 | 2010-05-25 | Cree Led Lighting Solutions, Inc. | Lighting device |
EP2027412B1 (en) | 2006-05-23 | 2018-07-04 | Cree, Inc. | Lighting device |
EP2027602A4 (en) | 2006-05-23 | 2012-11-28 | Cree Inc | Lighting device and method of making |
WO2007139894A2 (en) | 2006-05-26 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Solid state light emitting device and method of making same |
CN101573843B (en) | 2006-05-31 | 2012-09-12 | 科锐公司 | Lighting device and method of lighting |
KR20140116536A (en) | 2006-05-31 | 2014-10-02 | 크리, 인코포레이티드 | Lighting device and method of lighting |
EP2035745B1 (en) | 2006-05-31 | 2020-04-29 | IDEAL Industries Lighting LLC | Lighting device with color control, and method of lighting |
EP2060155A2 (en) | 2006-08-23 | 2009-05-20 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
EP2066968B1 (en) | 2006-09-18 | 2016-04-27 | Cree, Inc. | Lighting devices, lighting assemblies, fixtures and methods using same |
EP2076712B1 (en) | 2006-09-21 | 2020-08-12 | IDEAL Industries Lighting LLC | Lighting assembly, method of installing same, and method of removing same |
JP5351034B2 (en) | 2006-10-12 | 2013-11-27 | クリー インコーポレイテッド | LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF |
US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
WO2008067441A1 (en) | 2006-11-30 | 2008-06-05 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
WO2008073794A1 (en) | 2006-12-07 | 2008-06-19 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
CN101657671B (en) | 2007-02-22 | 2012-07-11 | 科锐公司 | Lighting devices, methods of lighting, light filters and methods of filtering light |
US7824070B2 (en) | 2007-03-22 | 2010-11-02 | Cree, Inc. | LED lighting fixture |
BRPI0811561A2 (en) | 2007-05-08 | 2015-06-16 | Cree Led Lighting Solutions | Lighting device and lighting method |
EP2142843B1 (en) | 2007-05-08 | 2016-12-14 | Cree, Inc. | Lighting device and lighting method |
EP2156090B1 (en) | 2007-05-08 | 2016-07-06 | Cree, Inc. | Lighting device and lighting method |
KR20100022969A (en) | 2007-05-08 | 2010-03-03 | 크리 엘이디 라이팅 솔루션즈, 인크. | Lighting device and lighting method |
EP2142844B1 (en) | 2007-05-08 | 2017-08-23 | Cree, Inc. | Lighting device and lighting method |
US8403531B2 (en) | 2007-05-30 | 2013-03-26 | Cree, Inc. | Lighting device and method of lighting |
EP2210036B1 (en) | 2007-10-10 | 2016-11-23 | Cree, Inc. | Lighting device and method of making |
US8350461B2 (en) | 2008-03-28 | 2013-01-08 | Cree, Inc. | Apparatus and methods for combining light emitters |
-
2004
- 2004-10-25 US US10/972,910 patent/US20060097385A1/en not_active Abandoned
-
2005
- 2005-07-05 EP EP05770853A patent/EP1805807A2/en not_active Ceased
- 2005-07-05 TW TW094122643A patent/TWI460877B/en active
- 2005-07-05 JP JP2007538890A patent/JP2008518461A/en active Pending
- 2005-07-05 KR KR1020077009221A patent/KR101203818B1/en active IP Right Grant
- 2005-07-05 AU AU2005300077A patent/AU2005300077A1/en not_active Abandoned
- 2005-07-05 TW TW103106637A patent/TW201424046A/en unknown
- 2005-07-05 EP EP09177126A patent/EP2151873B1/en active Active
- 2005-07-05 WO PCT/US2005/023873 patent/WO2006046981A2/en active Application Filing
- 2005-07-05 CN CNA2005800364558A patent/CN101048880A/en active Pending
-
2009
- 2009-01-30 US US12/363,000 patent/US8598606B2/en active Active
- 2009-06-15 US US12/484,713 patent/US7906793B2/en active Active
-
2011
- 2011-03-29 US US13/074,942 patent/US20110210360A1/en not_active Abandoned
- 2011-12-12 JP JP2011270840A patent/JP2012089870A/en active Pending
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4042552A (en) * | 1972-09-19 | 1977-08-16 | Warner-Lambert Company | Composition for hydrophilic lens blank and method of casting |
US4107238A (en) * | 1976-01-22 | 1978-08-15 | Exxon Research & Engineering Co. | Graft copolymerization process |
US4141941A (en) * | 1977-09-21 | 1979-02-27 | American Optical Corporation | Contact lens casting method |
US4650922A (en) * | 1985-03-11 | 1987-03-17 | Texas Instruments Incorporated | Thermally matched mounting substrate |
US4826424A (en) * | 1985-09-25 | 1989-05-02 | Canon Kabushiki Kaisha | Lens barrel made by injection molding |
US5753730A (en) * | 1986-12-15 | 1998-05-19 | Mitsui Toatsu Chemicals, Inc. | Plastic lenses having a high-refractive index, process for the preparation thereof and casting polymerization process for preparing sulfur-containing urethane resin lens and lens prepared thereby |
US4935665A (en) * | 1987-12-24 | 1990-06-19 | Mitsubishi Cable Industries Ltd. | Light emitting diode lamp |
US5277840A (en) * | 1988-03-16 | 1994-01-11 | Mitsubishi Rayon Co., Ltd. | Phosphor paste compositions and phosphor coatings obtained therefrom |
US5143660A (en) * | 1988-11-02 | 1992-09-01 | National Research Development Corporation | Method of casting a contact lens |
US4918497A (en) * | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5027168A (en) * | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5024966A (en) * | 1988-12-21 | 1991-06-18 | At&T Bell Laboratories | Method of forming a silicon-based semiconductor optical device mount |
US5087949A (en) * | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US4966862A (en) * | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5110278A (en) * | 1990-11-30 | 1992-05-05 | Pilkington Visioncare, Inc. | Injection molding apparatus for producing a toric lens casting mold arbor |
US5166815A (en) * | 1991-02-28 | 1992-11-24 | Novatel Communications, Ltd. | Liquid crystal display and reflective diffuser therefor including a reflection cavity section and an illumination cavity section |
US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5604135A (en) * | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) * | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5912477A (en) * | 1994-10-07 | 1999-06-15 | Cree Research, Inc. | High efficiency light emitting diodes |
US6120600A (en) * | 1995-05-08 | 2000-09-19 | Cree, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5669486A (en) * | 1995-08-07 | 1997-09-23 | Fuji Polymeritech Co., Ltd. | Illuminated switch |
US5858278A (en) * | 1996-02-29 | 1999-01-12 | Futaba Denshi Kogyo K.K. | Phosphor and method for producing same |
US6576930B2 (en) * | 1996-06-26 | 2003-06-10 | Osram Opto Semiconductors Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US6069440A (en) * | 1996-07-29 | 2000-05-30 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US5857767A (en) * | 1996-09-23 | 1999-01-12 | Relume Corporation | Thermal management system for L.E.D. arrays |
US6346973B1 (en) * | 1996-11-08 | 2002-02-12 | Casio Computer Co., Ltd. | Electroluminescent panel-attached electronic device |
US5857797A (en) * | 1996-12-17 | 1999-01-12 | H.C. Miller Company | Loose leaf binder including an exterior picture frame |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US5882553A (en) * | 1997-06-09 | 1999-03-16 | Guide Corporation | Multi-color lens assembly injection molding process and apparatus |
US5968422A (en) * | 1997-06-30 | 1999-10-19 | Bausch & Lomb Incorporated | Injection molding process for rotationally asymmetric contact lens surfaces |
US6219223B1 (en) * | 1997-09-24 | 2001-04-17 | Nec Corporation | Solid electrolyte capacitor and method of producing the same |
US6201262B1 (en) * | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6187606B1 (en) * | 1997-10-07 | 2001-02-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6383417B1 (en) * | 1997-12-26 | 2002-05-07 | Paulson Manufacturing Corporation | Method for injection molding a curvilinear lens |
US6184544B1 (en) * | 1998-01-29 | 2001-02-06 | Rohm Co., Ltd. | Semiconductor light emitting device with light reflective current diffusion layer |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6404125B1 (en) * | 1998-10-21 | 2002-06-11 | Sarnoff Corporation | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
US6391231B1 (en) * | 1998-11-23 | 2002-05-21 | Younger Mfg. Co. | Method for side-fill lens casting |
US6177688B1 (en) * | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
US6373188B1 (en) * | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
US6783362B2 (en) * | 1999-09-24 | 2004-08-31 | Cao Group, Inc. | Dental curing light using primary and secondary heat sink combination |
US20030173575A1 (en) * | 2000-02-15 | 2003-09-18 | Dominik Eisert | Radiation emitting semiconductor device |
US6521915B2 (en) * | 2000-03-14 | 2003-02-18 | Asahi Rubber Inc. | Light-emitting diode device |
US6853131B2 (en) * | 2000-03-27 | 2005-02-08 | General Electric Company | Single phosphor for creating white light with high luminosity and high CRI in a UV LED device |
US6522065B1 (en) * | 2000-03-27 | 2003-02-18 | General Electric Company | Single phosphor for creating white light with high luminosity and high CRI in a UV led device |
US20020006044A1 (en) * | 2000-05-04 | 2002-01-17 | Koninklijke Philips Electronics N.V. | Assembly of a display device and an illumination system |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US6562643B2 (en) * | 2000-10-06 | 2003-05-13 | Solidlite Corporation | Packaging types of light-emitting diode |
US20030080341A1 (en) * | 2001-01-24 | 2003-05-01 | Kensho Sakano | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
US20020123164A1 (en) * | 2001-02-01 | 2002-09-05 | Slater David B. | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
US20020172354A1 (en) * | 2001-03-21 | 2002-11-21 | Kengo Nishi | Highly recyclable keypad with a key top and method of separating the same |
US20030189830A1 (en) * | 2001-04-12 | 2003-10-09 | Masaru Sugimoto | Light source device using led, and method of producing same |
US20040120155A1 (en) * | 2001-04-17 | 2004-06-24 | Ryoma Suenaga | Light-emitting apparatus |
US20030006418A1 (en) * | 2001-05-30 | 2003-01-09 | Emerson David Todd | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US20030032212A1 (en) * | 2001-08-07 | 2003-02-13 | Bily Wang | LED focusing cup in a stacked substrate |
US20030189829A1 (en) * | 2001-08-09 | 2003-10-09 | Matsushita Electric Industrial Co., Ltd. | LED illumination apparatus and card-type LED illumination source |
US7259403B2 (en) * | 2001-08-09 | 2007-08-21 | Matsushita Electric Industrial Co., Ltd. | Card-type LED illumination source |
US20040065894A1 (en) * | 2001-08-28 | 2004-04-08 | Takuma Hashimoto | Light emitting device using led |
US20050073846A1 (en) * | 2001-09-27 | 2005-04-07 | Kenji Takine | Lightemitting device and method of manufacturing the same |
US20030067264A1 (en) * | 2001-10-09 | 2003-04-10 | Agilent Technologies, Inc. | Light-emitting diode and method for its production |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
US6734465B1 (en) * | 2001-11-19 | 2004-05-11 | Nanocrystals Technology Lp | Nanocrystalline based phosphors and photonic structures for solid state lighting |
US20030128313A1 (en) * | 2001-12-14 | 2003-07-10 | Eastman Kodak Company | Light diffusion material with color temperature correction |
US6707069B2 (en) * | 2001-12-24 | 2004-03-16 | Samsung Electro-Mechanics Co., Ltd | Light emission diode package |
US20030153861A1 (en) * | 2002-02-11 | 2003-08-14 | Royer George R. | Wound treatment bandage |
US6639356B2 (en) * | 2002-03-28 | 2003-10-28 | Unity Opto Technology Co., Ltd. | Heat dissipating light emitting diode |
US20040105264A1 (en) * | 2002-07-12 | 2004-06-03 | Yechezkal Spero | Multiple Light-Source Illuminating System |
US20070018181A1 (en) * | 2002-07-16 | 2007-01-25 | Steen Ronald L | White led headlight |
US6599768B1 (en) * | 2002-08-20 | 2003-07-29 | United Epitaxy Co., Ltd. | Surface mounting method for high power light emitting diode |
US20040041222A1 (en) * | 2002-09-04 | 2004-03-04 | Loh Ban P. | Power surface mount light emitting die package |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US20040041757A1 (en) * | 2002-09-04 | 2004-03-04 | Ming-Hsiang Yang | Light emitting diode display module with high heat-dispersion and the substrate thereof |
US20040056260A1 (en) * | 2002-09-19 | 2004-03-25 | Slater David B. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US6744077B2 (en) * | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
US6686609B1 (en) * | 2002-10-01 | 2004-02-03 | Ultrastar Limited | Package structure of surface mounting led and method of manufacturing the same |
US20040066556A1 (en) * | 2002-10-07 | 2004-04-08 | Eastman Kodak Company | Voided polymer film containing layered particulates |
US6791151B2 (en) * | 2002-10-11 | 2004-09-14 | Highlink Technology Corporation | Base of optoelectronic device |
US20040095738A1 (en) * | 2002-11-15 | 2004-05-20 | Der-Ming Juang | Base plate for a light emitting diode chip |
US20040124429A1 (en) * | 2002-12-31 | 2004-07-01 | Edward Stokes | Layered phosphor coatings for led devices |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US20040211970A1 (en) * | 2003-04-24 | 2004-10-28 | Yoshiaki Hayashimoto | Semiconductor light emitting device with reflectors having cooling function |
US20050023551A1 (en) * | 2003-08-01 | 2005-02-03 | Fuji Photo Film Co., Ltd. | Light source unit |
US20050224830A1 (en) * | 2004-04-09 | 2005-10-13 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US7252408B2 (en) * | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
US20060065957A1 (en) * | 2004-09-24 | 2006-03-30 | Akihiko Hanya | Light emitting diode device |
US7322732B2 (en) * | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US20070223219A1 (en) * | 2005-01-10 | 2007-09-27 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-cri warm white light and light fixtures including the same |
US7213940B1 (en) * | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
Cited By (290)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8530915B2 (en) | 2002-09-04 | 2013-09-10 | Cree, Inc. | Power surface mount light emitting die package |
US8167463B2 (en) | 2002-09-04 | 2012-05-01 | Cree, Inc. | Power surface mount light emitting die package |
US20110121345A1 (en) * | 2002-09-04 | 2011-05-26 | Peter Scott Andrews | Power surface mount light emitting die package |
US8608349B2 (en) | 2002-09-04 | 2013-12-17 | Cree, Inc. | Power surface mount light emitting die package |
US20110186897A1 (en) * | 2002-09-04 | 2011-08-04 | Loh Ban P | Power surface mount light emitting die package |
US8622582B2 (en) | 2002-09-04 | 2014-01-07 | Cree, Inc. | Power surface mount light emitting die package |
US8710514B2 (en) | 2002-09-04 | 2014-04-29 | Cree, Inc. | Power surface mount light emitting die package |
US20100301372A1 (en) * | 2003-05-27 | 2010-12-02 | Cree, Inc. | Power surface mount light emitting die package |
US7976186B2 (en) | 2003-05-27 | 2011-07-12 | Cree, Inc. | Power surface mount light emitting die package |
US20070200127A1 (en) * | 2003-05-27 | 2007-08-30 | Andrews Peter S | Power surface mount light emitting die package |
US8188488B2 (en) | 2003-05-27 | 2012-05-29 | Cree, Inc. | Power surface mount light emitting die package |
US7837348B2 (en) | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US11028979B2 (en) | 2004-05-05 | 2021-06-08 | Rensselaer Polytechnic Institute | Lighting source using solid state emitter and phosphor materials |
US7819549B2 (en) | 2004-05-05 | 2010-10-26 | Rensselaer Polytechnic Institute | High efficiency light source using solid-state emitter and down-conversion material |
US9447945B2 (en) | 2004-05-05 | 2016-09-20 | Rensselaer Polytechnic Institute | Lighting source using solid state emitter and phosphor materials |
US8764225B2 (en) | 2004-05-05 | 2014-07-01 | Rensselaer Polytechnic Institute | Lighting source using solid state emitter and phosphor materials |
US20080094829A1 (en) * | 2004-05-05 | 2008-04-24 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US8960953B2 (en) | 2004-05-05 | 2015-02-24 | Rensselaer Polytechnic Institute | Lighting source using solid state emitter and phosphor materials |
US20080030993A1 (en) * | 2004-05-05 | 2008-02-07 | Nadarajah Narendran | High Efficiency Light Source Using Solid-State Emitter and Down-Conversion Material |
US20110063830A1 (en) * | 2004-05-05 | 2011-03-17 | Rensselaer Polytechnic Institute | Lighting source using solid state emitter and phosphor materials |
US7906793B2 (en) | 2004-10-25 | 2011-03-15 | Cree, Inc. | Solid metal block semiconductor light emitting device mounting substrates |
US8598606B2 (en) | 2004-10-25 | 2013-12-03 | Cree, Inc. | Solid metal block semiconductor light emitting device mounting substrates and packages |
US20090134421A1 (en) * | 2004-10-25 | 2009-05-28 | Cree, Inc. | Solid metal block semiconductor light emitting device mounting substrates and packages |
US20100133555A1 (en) * | 2004-10-25 | 2010-06-03 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates |
US20110210360A1 (en) * | 2004-10-25 | 2011-09-01 | Cree, Inc. | Transmissive optical elements including phosphor patterns therein |
US7670872B2 (en) | 2004-10-29 | 2010-03-02 | LED Engin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
US20060091415A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
US7473933B2 (en) | 2004-10-29 | 2009-01-06 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US20060091416A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US20060094137A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
US9842973B2 (en) | 2004-10-29 | 2017-12-12 | Ledengin, Inc. | Method of manufacturing ceramic LED packages with higher heat dissipation |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
US8816369B2 (en) | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US9653663B2 (en) | 2004-10-29 | 2017-05-16 | Ledengin, Inc. | Ceramic LED package |
US20070241357A1 (en) * | 2004-10-29 | 2007-10-18 | Ledengin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US20060091788A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US7772609B2 (en) | 2004-10-29 | 2010-08-10 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
US8541797B2 (en) * | 2004-11-18 | 2013-09-24 | Koninklijke Philips N.V. | Illuminator and method for producing such illuminator |
US20090078948A1 (en) * | 2004-11-18 | 2009-03-26 | Koninklijke Philips Electronics, N.V. | Illuminator and method for producing such illuminator |
US20100220474A1 (en) * | 2004-12-17 | 2010-09-02 | Jun Seok Park | Package for light emitting device and method for packaging the same |
US20130229800A1 (en) * | 2004-12-17 | 2013-09-05 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US10677417B2 (en) | 2004-12-17 | 2020-06-09 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US20100220473A1 (en) * | 2004-12-17 | 2010-09-02 | Jun Seok Park | Package for light emitting device and method for packaging the same |
US8076691B2 (en) | 2004-12-17 | 2011-12-13 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US9671099B2 (en) * | 2004-12-17 | 2017-06-06 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US20090146158A1 (en) * | 2004-12-17 | 2009-06-11 | Jun Seok Park | Package for Light Emitting Device and Method for Packaging the Same |
US20100220475A1 (en) * | 2004-12-17 | 2010-09-02 | Jun Seok Park | Package for light emitting device and method for packaging the same |
US8415696B2 (en) * | 2004-12-17 | 2013-04-09 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US8357947B2 (en) * | 2004-12-17 | 2013-01-22 | Lg Innotek Co., Ltd. | Package for light emitting device and method for packaging the same |
US8035121B2 (en) * | 2004-12-17 | 2011-10-11 | Lg Innotek Co., Ltd. | Package for light emitting device having a lens spaced from a light emitting device module |
USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US9412926B2 (en) | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
US20080007953A1 (en) * | 2005-06-10 | 2008-01-10 | Cree, Inc. | High power solid-state lamp |
US7980743B2 (en) | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
US8308331B2 (en) * | 2005-06-14 | 2012-11-13 | Cree, Inc. | LED backlighting for displays |
US20060279962A1 (en) * | 2005-06-14 | 2006-12-14 | Loh Ban P | LED backlighting for displays |
US7750359B2 (en) | 2005-06-23 | 2010-07-06 | Rensselaer Polytechnic Institute | Package design for producing white light with short-wavelength LEDS and down-conversion materials |
US20080105887A1 (en) * | 2005-06-23 | 2008-05-08 | Nadarajah Narendran | Package Design for Producing White Light With Short-Wavelength Leds and Down-Conversion Materials |
US20060292747A1 (en) * | 2005-06-27 | 2006-12-28 | Loh Ban P | Top-surface-mount power light emitter with integral heat sink |
US20070108599A1 (en) * | 2005-11-15 | 2007-05-17 | Samsung Electronics Co., Ltd. | Semiconductor chip package with a metal substrate and semiconductor module having the same |
US20090026908A1 (en) * | 2006-01-24 | 2009-01-29 | Koninklijke Philips Electronics N.V. | Light-emitting device |
US7859185B2 (en) * | 2006-01-24 | 2010-12-28 | Koninklijke Philips Electronics N.V. | Light-emitting device |
US20100230707A1 (en) * | 2006-03-03 | 2010-09-16 | Kyung Ho Shin | Light-emitting diode package and manufacturing method thereof |
US20080179612A1 (en) * | 2006-03-03 | 2008-07-31 | Kyung Ho Shin | Light-Emitting Diode Package and Manufacturing Method Thereof |
US8212274B2 (en) * | 2006-03-03 | 2012-07-03 | Lg Innotek Co., Ltd. | Light-emitting diode package and manufacturing method thereof |
US20120248488A1 (en) * | 2006-03-03 | 2012-10-04 | LG Innotek., Ltd. | Light-Emitting Diode Package and Manufacturing Method Thereof |
US8796717B2 (en) * | 2006-03-03 | 2014-08-05 | Lg Innotek Co., Ltd. | Light-emitting diode package and manufacturing method thereof |
US7745844B2 (en) * | 2006-03-03 | 2010-06-29 | Lg Innotek Co., Ltd. | Light-emitting diode package and manufacturing method thereof |
US8529104B2 (en) | 2006-05-23 | 2013-09-10 | Cree, Inc. | Lighting device |
US7980731B2 (en) | 2006-05-30 | 2011-07-19 | Fujikura Ltd. | Light-emitting element mounting substrate, light source, lighting device, display device, traffic signal, and method of manufacturing light-emitting element mounting substrate |
US20100187556A1 (en) * | 2006-08-08 | 2010-07-29 | Kim Geun Ho | Light Emitting Device Package And Method For Manufacturing The Same |
US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
US9166123B2 (en) * | 2006-08-08 | 2015-10-20 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
EP2056364A4 (en) * | 2006-08-11 | 2013-07-24 | Mitsubishi Chem Corp | Illuminating apparatus |
WO2008027093A2 (en) * | 2006-08-31 | 2008-03-06 | Rensselaer Polytechnic Institute | High-efficiency light- emitting apparatus using light emitting diodes |
US20080054281A1 (en) * | 2006-08-31 | 2008-03-06 | Nadarajah Narendran | High-efficient light engines using light emitting diodes |
WO2008027093A3 (en) * | 2006-08-31 | 2008-04-24 | Rensselaer Polytech Inst | High-efficiency light- emitting apparatus using light emitting diodes |
US7703942B2 (en) * | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
US9541246B2 (en) | 2006-09-30 | 2017-01-10 | Cree, Inc. | Aerodynamic LED light fixture |
US8425071B2 (en) | 2006-09-30 | 2013-04-23 | Cree, Inc. | LED lighting fixture |
US20080078524A1 (en) * | 2006-09-30 | 2008-04-03 | Ruud Lighting, Inc. | Modular LED Units |
US9039223B2 (en) | 2006-09-30 | 2015-05-26 | Cree, Inc. | LED lighting fixture |
US20080080196A1 (en) * | 2006-09-30 | 2008-04-03 | Ruud Lighting, Inc. | LED Floodlight Fixture |
US9243794B2 (en) | 2006-09-30 | 2016-01-26 | Cree, Inc. | LED light fixture with fluid flow to and from the heat sink |
US9028087B2 (en) | 2006-09-30 | 2015-05-12 | Cree, Inc. | LED light fixture |
US9261270B2 (en) | 2006-09-30 | 2016-02-16 | Cree, Inc. | LED lighting fixture |
US7952262B2 (en) | 2006-09-30 | 2011-05-31 | Ruud Lighting, Inc. | Modular LED unit incorporating interconnected heat sinks configured to mount and hold adjacent LED modules |
US7686469B2 (en) | 2006-09-30 | 2010-03-30 | Ruud Lighting, Inc. | LED lighting fixture |
US8070306B2 (en) | 2006-09-30 | 2011-12-06 | Ruud Lighting, Inc. | LED lighting fixture |
US9534775B2 (en) | 2006-09-30 | 2017-01-03 | Cree, Inc. | LED light fixture |
US8164825B2 (en) | 2006-11-17 | 2012-04-24 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
WO2008060335A1 (en) * | 2006-11-17 | 2008-05-22 | Rensselaer Polytechnic Institute | High-power white leds and manufacturing method thereof |
US8031393B2 (en) | 2006-11-17 | 2011-10-04 | Renesselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
US10305001B2 (en) | 2006-11-17 | 2019-05-28 | Rensselaer Polytechnic Institute | High-power white LEDs |
US7889421B2 (en) | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
US20110102883A1 (en) * | 2006-11-17 | 2011-05-05 | Rensselaer Polytechnic Institute | High-power white leds and manufacturing method thereof |
US20080117500A1 (en) * | 2006-11-17 | 2008-05-22 | Nadarajah Narendran | High-power white LEDs and manufacturing method thereof |
CN103227267A (en) * | 2006-11-17 | 2013-07-31 | 伦斯勒工业学院 | High-Power White LEDS |
US9105816B2 (en) | 2006-11-17 | 2015-08-11 | Rensselaer Polytechnic Institute | High-power white LEDs |
US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
CN100433391C (en) * | 2006-11-30 | 2008-11-12 | 何永祥 | A large power LED using porous metal material as heat emission device |
TWI400820B (en) * | 2006-12-29 | 2013-07-01 | Osram Opto Semiconductors Gmbh | Lens arrangement and led indicator device |
US8754427B2 (en) | 2006-12-29 | 2014-06-17 | Osram Opto Semiconductors Gmbh | Lens arrangement and LED display device |
US20100038666A1 (en) * | 2006-12-29 | 2010-02-18 | Stefan Groetsch | Lens Arrangement and LED Display Device |
US20080283864A1 (en) * | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
US8324641B2 (en) | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
US20090039382A1 (en) * | 2007-08-10 | 2009-02-12 | Iintematix Technology Center Corp. | Light emitting diode package structure |
US20090052158A1 (en) * | 2007-08-23 | 2009-02-26 | Philips Lumileds Lighting Company, Llc | Light Source Including Reflective Wavelength-Converting Layer |
US7810956B2 (en) * | 2007-08-23 | 2010-10-12 | Koninklijke Philips Electronics N.V. | Light source including reflective wavelength-converting layer |
US20090059594A1 (en) * | 2007-08-31 | 2009-03-05 | Ming-Feng Lin | Heat dissipating apparatus for automotive LED lamp |
US20090121244A1 (en) * | 2007-11-08 | 2009-05-14 | Steven Lo | LED packaging structure and production method thereof |
US8198800B2 (en) * | 2008-03-07 | 2012-06-12 | Harvatek Corporation | LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same |
US20090224653A1 (en) * | 2008-03-07 | 2009-09-10 | Bily Wang | LED chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same |
US20110189803A1 (en) * | 2008-03-07 | 2011-08-04 | Harvatek Corporation | Led chip package structure in order to prevent the light-emitting efficiency of fluorescent powder from decreasing due to high temperature and method for making the same |
US20090252950A1 (en) * | 2008-04-04 | 2009-10-08 | Hong Kong Applied Science And Technology Research Institute | Alumina substrate and method of making an alumina substrate |
US8008682B2 (en) * | 2008-04-04 | 2011-08-30 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Alumina substrate and method of making an alumina substrate |
US9455375B2 (en) | 2008-05-23 | 2016-09-27 | Lg Innotek Co., Ltd. | Light emitting device package including a substrate having at least two recessed surfaces |
US9190450B2 (en) | 2008-05-23 | 2015-11-17 | Lg Innotek Co., Ltd. | Light emitting device package including a substrate having at least two recessed surfaces |
US20120104447A1 (en) * | 2008-05-23 | 2012-05-03 | Kim Geun Ho | Light emitting device package |
US8878229B2 (en) | 2008-05-23 | 2014-11-04 | Lg Innotek Co., Ltd. | Light emitting device package including a substrate having at least two recessed surfaces |
US8592855B2 (en) * | 2008-05-23 | 2013-11-26 | Lg Innotek Co., Ltd. | Light emitting device package including a substrate having at least two recessed surfaces |
US10263163B2 (en) * | 2008-05-30 | 2019-04-16 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
US20110069474A1 (en) * | 2008-05-30 | 2011-03-24 | Bridgelux, Inc. | Method and Apparatus for Generating White Light from Solid State Light Emitting Devices |
US20100001300A1 (en) * | 2008-06-25 | 2010-01-07 | Soraa, Inc. | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs |
US9252336B2 (en) * | 2008-09-26 | 2016-02-02 | Bridgelux, Inc. | Multi-cup LED assembly |
US20100079994A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Multi-cup led assembly |
US8430537B2 (en) | 2008-10-14 | 2013-04-30 | Ledengin, Inc. | Total internal reflection lens for color mixing |
US8246216B2 (en) | 2008-10-14 | 2012-08-21 | Ledengin, Inc. | Total internal reflection lens with pedestals for LED emitter |
US20100091499A1 (en) * | 2008-10-14 | 2010-04-15 | Ledengin, Inc. | Total Internal Reflection Lens and Mechanical Retention and Locating Device |
US8075165B2 (en) | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
US20100091491A1 (en) * | 2008-10-14 | 2010-04-15 | Ledengin, Inc. | Total internal reflection lens for color mixing |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
US9046248B2 (en) | 2008-11-18 | 2015-06-02 | Cree, Inc. | Semiconductor light emitting apparatus including bulb and screw-type base |
US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
US9052416B2 (en) | 2008-11-18 | 2015-06-09 | Cree, Inc. | Ultra-high efficacy semiconductor light emitting devices |
US8004172B2 (en) | 2008-11-18 | 2011-08-23 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same |
US8362681B2 (en) | 2008-11-18 | 2013-01-29 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes |
US20100124243A1 (en) * | 2008-11-18 | 2010-05-20 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same |
US8507300B2 (en) | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US20100155755A1 (en) * | 2008-12-24 | 2010-06-24 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US20120032200A1 (en) * | 2009-03-30 | 2012-02-09 | Sung Hoon Kwon | Method for coating light-emitting devices, light coupler, and method for manufacturing the light coupler |
US8455890B2 (en) * | 2009-03-30 | 2013-06-04 | Snu R&Db Foundation | Method for coating light-emitting devices, light coupler, and method for manufacturing the light coupler |
US20100259924A1 (en) * | 2009-04-08 | 2010-10-14 | Ledengin, Inc. | Lighting Apparatus Having Multiple Light-Emitting Diodes With Individual Light-Conversion Layers |
US7985000B2 (en) | 2009-04-08 | 2011-07-26 | Ledengin, Inc. | Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers |
US9554457B2 (en) | 2009-04-08 | 2017-01-24 | Ledengin, Inc. | Package for multiple light emitting diodes |
US8716725B2 (en) | 2009-04-08 | 2014-05-06 | Ledengin, Inc. | Package for multiple light emitting diodes |
US8384097B2 (en) | 2009-04-08 | 2013-02-26 | Ledengin, Inc. | Package for multiple light emitting diodes |
US8278681B2 (en) | 2009-04-09 | 2012-10-02 | Lextar Electronics Corp. | Light-emitting diode package and wafer-level packaging process of light-emitting diode |
US20100258827A1 (en) * | 2009-04-09 | 2010-10-14 | Lextar Electronics Corp. | Light-emitting diode package and wafer-level packaging process of light-emitting diode |
US8445327B2 (en) | 2009-04-09 | 2013-05-21 | Lextar Electronics Corp. | Light-emitting diode package and wafer-level packaging process of light-emitting diode |
US20120012156A1 (en) * | 2009-07-20 | 2012-01-19 | Ryan Linderman | Optoelectronic device with heat spreader unit |
US9466748B2 (en) | 2009-07-20 | 2016-10-11 | Sunpower Corporation | Optoelectronic device with heat spreader unit |
US8860162B2 (en) * | 2009-07-20 | 2014-10-14 | Sunpower Corporation | Optoelectronic device with heat spreader unit |
US20120235201A1 (en) * | 2009-09-11 | 2012-09-20 | Soraa, Inc. | System and method for led packaging |
US20170012178A1 (en) * | 2009-09-11 | 2017-01-12 | Rohm Co., Ltd. | Light emitting device |
US8674395B2 (en) * | 2009-09-11 | 2014-03-18 | Soraa, Inc. | System and method for LED packaging |
US10084117B2 (en) * | 2009-09-11 | 2018-09-25 | Rohm Co., Ltd. | Light emitting device |
US9046227B2 (en) | 2009-09-18 | 2015-06-02 | Soraa, Inc. | LED lamps with improved quality of light |
US10557595B2 (en) | 2009-09-18 | 2020-02-11 | Soraa, Inc. | LED lamps with improved quality of light |
US11105473B2 (en) | 2009-09-18 | 2021-08-31 | EcoSense Lighting, Inc. | LED lamps with improved quality of light |
US11662067B2 (en) | 2009-09-18 | 2023-05-30 | Korrus, Inc. | LED lamps with improved quality of light |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
US20110149581A1 (en) * | 2009-12-17 | 2011-06-23 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
US8303141B2 (en) | 2009-12-17 | 2012-11-06 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
US20130062653A1 (en) * | 2009-12-26 | 2013-03-14 | Achrolux Inc. | Methods for packaging light emitting devices and related microelectronic devices |
WO2011079387A1 (en) * | 2009-12-30 | 2011-07-07 | Lumenpulse Lighting Inc. | High powered light emitting diode lighting unit |
US8877563B2 (en) | 2010-01-26 | 2014-11-04 | Qualcomm Incorporated | Microfabricated pillar fins for thermal management |
US8283776B2 (en) * | 2010-01-26 | 2012-10-09 | Qualcomm Incorporated | Microfabricated pillar fins for thermal management |
US20110180925A1 (en) * | 2010-01-26 | 2011-07-28 | Qualcomm Incorporated | Microfabricated Pillar Fins For Thermal Management |
US20110186874A1 (en) * | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9500325B2 (en) | 2010-03-03 | 2016-11-22 | Cree, Inc. | LED lamp incorporating remote phosphor with heat dissipation features |
US9316361B2 (en) | 2010-03-03 | 2016-04-19 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration |
US20110215345A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Solid state lamp with thermal spreading elements and light directing optics |
US20110215701A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp incorporating remote phosphor with heat dissipation features |
US9625105B2 (en) | 2010-03-03 | 2017-04-18 | Cree, Inc. | LED lamp with active cooling element |
US20110215699A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Solid state lamp and bulb |
US8931933B2 (en) | 2010-03-03 | 2015-01-13 | Cree, Inc. | LED lamp with active cooling element |
US9024517B2 (en) | 2010-03-03 | 2015-05-05 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration utilizing red emitters |
US20110215697A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp with active cooling element |
US20110215698A1 (en) * | 2010-03-03 | 2011-09-08 | Cree, Inc. | Led lamp with active cooling element |
US20110227102A1 (en) * | 2010-03-03 | 2011-09-22 | Cree, Inc. | High efficacy led lamp with remote phosphor and diffuser configuration |
US10359151B2 (en) | 2010-03-03 | 2019-07-23 | Ideal Industries Lighting Llc | Solid state lamp with thermal spreading elements and light directing optics |
US8562161B2 (en) | 2010-03-03 | 2013-10-22 | Cree, Inc. | LED based pedestal-type lighting structure |
US9057511B2 (en) | 2010-03-03 | 2015-06-16 | Cree, Inc. | High efficiency solid state lamp and bulb |
US9062830B2 (en) * | 2010-03-03 | 2015-06-23 | Cree, Inc. | High efficiency solid state lamp and bulb |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
US9217544B2 (en) | 2010-03-03 | 2015-12-22 | Cree, Inc. | LED based pedestal-type lighting structure |
US9310030B2 (en) | 2010-03-03 | 2016-04-12 | Cree, Inc. | Non-uniform diffuser to scatter light into uniform emission pattern |
US8882284B2 (en) | 2010-03-03 | 2014-11-11 | Cree, Inc. | LED lamp or bulb with remote phosphor and diffuser configuration with enhanced scattering properties |
US9991427B2 (en) | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
US20110215355A1 (en) * | 2010-03-08 | 2011-09-08 | Van De Ven Antony P | Photonic crystal phosphor light conversion structures for light emitting devices |
US8846424B2 (en) | 2010-03-25 | 2014-09-30 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
US20110235306A1 (en) * | 2010-03-25 | 2011-09-29 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
US8552438B2 (en) * | 2010-03-25 | 2013-10-08 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
US9080729B2 (en) | 2010-04-08 | 2015-07-14 | Ledengin, Inc. | Multiple-LED emitter for A-19 lamps |
US9482407B2 (en) | 2010-04-08 | 2016-11-01 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US10149363B2 (en) | 2010-04-08 | 2018-12-04 | Ledengin, Inc. | Method for making tunable multi-LED emitter module |
US9345095B2 (en) | 2010-04-08 | 2016-05-17 | Ledengin, Inc. | Tunable multi-LED emitter module |
US8450929B2 (en) | 2010-06-28 | 2013-05-28 | Panasonic Corporation | Light emitting device, backlight unit, liquid crystal display apparatus, and lighting apparatus |
US8894251B2 (en) | 2010-07-05 | 2014-11-25 | Panasonic Corporation | Lighting device topology for reducing unevenness in LED luminance and color |
US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
US9685573B2 (en) | 2010-08-03 | 2017-06-20 | Sunpower Corporation | Diode and heat spreader for solar module |
US8563849B2 (en) | 2010-08-03 | 2013-10-22 | Sunpower Corporation | Diode and heat spreader for solar module |
US20140055989A1 (en) * | 2010-08-10 | 2014-02-27 | Relume Technologies, Inc. | L.e.d. light emitting assembly with composite heat sink |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US11611023B2 (en) | 2010-08-19 | 2023-03-21 | Korrus, Inc. | System and method for selected pump LEDs with multiple phosphors |
US10700244B2 (en) | 2010-08-19 | 2020-06-30 | EcoSense Lighting, Inc. | System and method for selected pump LEDs with multiple phosphors |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US20100320486A1 (en) * | 2010-08-30 | 2010-12-23 | Rene Peter Helbing | Light-emitting device array with individual cells |
US10756066B2 (en) | 2010-08-30 | 2020-08-25 | Bridgelux Inc. | Light-emitting device array with individual cells |
US8937324B2 (en) * | 2010-08-30 | 2015-01-20 | Bridgelux, Inc. | Light-emitting device array with individual cells |
US20100320487A1 (en) * | 2010-08-30 | 2010-12-23 | Rene Peter Helbing | Light-emitting device array with individual cells |
US9373606B2 (en) | 2010-08-30 | 2016-06-21 | Bridgelux, Inc. | Light-emitting device array with individual cells |
US20130221826A1 (en) * | 2010-09-21 | 2013-08-29 | Nec Corporation | Phosphor-coated light-emitting device |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
US9234655B2 (en) | 2011-02-07 | 2016-01-12 | Cree, Inc. | Lamp with remote LED light source and heat dissipating elements |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
US20150194576A1 (en) * | 2011-03-06 | 2015-07-09 | Mordehai MARGALIT | Light Emitting Diode Package and Method of Manufacture |
US9786822B2 (en) * | 2011-03-06 | 2017-10-10 | Mordehai MARGALIT | Light emitting diode package and method of manufacture |
US10147853B2 (en) * | 2011-03-18 | 2018-12-04 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
US20120235190A1 (en) * | 2011-03-18 | 2012-09-20 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
US8773024B2 (en) | 2011-05-12 | 2014-07-08 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
US9528665B2 (en) | 2011-05-12 | 2016-12-27 | Ledengin, Inc. | Phosphors for warm white emitters |
US9024529B2 (en) | 2011-05-12 | 2015-05-05 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
US8598793B2 (en) | 2011-05-12 | 2013-12-03 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
CN102832313A (en) * | 2011-06-13 | 2012-12-19 | 隆达电子股份有限公司 | Heat dissipation packaging unit and support structure thereof |
US10957830B2 (en) | 2011-06-24 | 2021-03-23 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
US11588083B2 (en) | 2011-06-24 | 2023-02-21 | Creeled, Inc. | High voltage monolithic LED chip with improved reliability |
US11843083B2 (en) | 2011-06-24 | 2023-12-12 | Creeled, Inc. | High voltage monolithic LED chip with improved reliability |
US11054117B2 (en) | 2011-09-02 | 2021-07-06 | EcoSense Lighting, Inc. | Accessories for LED lamp systems |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US20130126922A1 (en) * | 2011-11-21 | 2013-05-23 | Foxsemicon Integrated Technology, Inc. | Light emitting diode incorporating light converting material |
US9068701B2 (en) | 2012-01-26 | 2015-06-30 | Cree, Inc. | Lamp structure with remote LED light source |
US11032884B2 (en) | 2012-03-02 | 2021-06-08 | Ledengin, Inc. | Method for making tunable multi-led emitter module |
US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
US20130258713A1 (en) * | 2012-03-27 | 2013-10-03 | Shenzhen China Star Optoelectronics Technology Co. ,LTD. | Backlight Module, LCD Device and Light Source of Backlight Module |
US8746947B2 (en) * | 2012-03-27 | 2014-06-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Backlight module, LCD device and light source of backlight module |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
US9865780B2 (en) | 2012-06-11 | 2018-01-09 | Cree, Inc. | LED package with encapsulant having planar surfaces |
US9887327B2 (en) | 2012-06-11 | 2018-02-06 | Cree, Inc. | LED package with encapsulant having curved and planar surfaces |
US9818919B2 (en) | 2012-06-11 | 2017-11-14 | Cree, Inc. | LED package with multiple element light source and encapsulant having planar surfaces |
US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
US11424394B2 (en) | 2012-06-11 | 2022-08-23 | Creeled, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
US20150325764A1 (en) * | 2012-09-08 | 2015-11-12 | Lumichip Limited | LED chip-on-board component and lighting module |
US8991682B2 (en) | 2012-09-28 | 2015-03-31 | Sunpower Corporation | Methods and structures for forming and improving solder joint thickness and planarity control features for solar cells |
US8636198B1 (en) | 2012-09-28 | 2014-01-28 | Sunpower Corporation | Methods and structures for forming and improving solder joint thickness and planarity control features for solar cells |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US20140145221A1 (en) * | 2012-11-23 | 2014-05-29 | Helio Optoelectronics Corporation | Led lamp structure with heat sink |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9470395B2 (en) * | 2013-03-15 | 2016-10-18 | Abl Ip Holding Llc | Optic for a light source |
US10890313B2 (en) | 2013-03-15 | 2021-01-12 | Abl Ip Holding Llc | Optic for a light source |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
US20140268810A1 (en) * | 2013-03-15 | 2014-09-18 | Abl Ip Holding Llc | Optic for a Light Source |
US10578276B2 (en) | 2013-03-15 | 2020-03-03 | Abl Ip Holding Llc | Optic for a light source |
US9373555B2 (en) * | 2013-04-24 | 2016-06-21 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
US20160027709A1 (en) * | 2013-04-24 | 2016-01-28 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
US9601399B2 (en) * | 2013-04-29 | 2017-03-21 | Abb Schweiz Ag | Module arrangement for power semiconductor devices |
US20160049342A1 (en) * | 2013-04-29 | 2016-02-18 | Abb Technology Ag | Module Arrangement For Power Semiconductor Devices |
US9356200B2 (en) * | 2013-06-27 | 2016-05-31 | LG Inntotek Co., Ltd. | Light emitting device package |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9461024B2 (en) | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
US9879851B2 (en) * | 2013-09-25 | 2018-01-30 | Iwasaki Electric Co., Ltd. | Lamp having outwardly orientated light source units and inwardly orientated heat sinks with transversely orientated fins |
US20160223184A1 (en) * | 2013-09-25 | 2016-08-04 | Iwasaki Electric Co., Ltd. | Lamp |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US10529902B2 (en) | 2013-11-04 | 2020-01-07 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US9406654B2 (en) | 2014-01-27 | 2016-08-02 | Ledengin, Inc. | Package for high-power LED devices |
US10495268B1 (en) * | 2014-10-31 | 2019-12-03 | The Regents Of The University Of California | High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors |
US9642206B2 (en) | 2014-11-26 | 2017-05-02 | Ledengin, Inc. | Compact emitter for warm dimming and color tunable lamp |
US10172206B2 (en) | 2014-11-26 | 2019-01-01 | Ledengin, Inc. | Compact emitter for warm dimming and color tunable lamp |
US20200063934A1 (en) * | 2015-02-23 | 2020-02-27 | Toshiba Lighting & Technology Corporation | Vehicle Lighting Device and Vehicle Lamp |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
US9970648B2 (en) * | 2015-07-06 | 2018-05-15 | Lg Electronics Inc. | Light source module, fabrication method therefor, and lighting device including the same |
US20170009975A1 (en) * | 2015-07-06 | 2017-01-12 | Lg Electronics Inc. | Light source module, fabrication method therefor, and lighting device including the same |
US20170031115A1 (en) * | 2015-07-29 | 2017-02-02 | Corning Optical Communications LLC | Wafer-level integrated opto-electronic module |
US10082633B2 (en) * | 2015-07-29 | 2018-09-25 | Corning Optical Communications LLC | Wafer-level integrated opto-electronic module |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
US10062822B1 (en) * | 2017-12-01 | 2018-08-28 | Lite-On Singapore Pte. Ltd. | Light-emitting diode package structure with an improved structure, light-emitting device using the same, and method of making the same |
US10575374B2 (en) | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
US20210336098A1 (en) * | 2020-04-24 | 2021-10-28 | Nichia Corporation | Light-emitting device and method of manufacturing the light-emitting device |
US11710809B2 (en) * | 2020-04-24 | 2023-07-25 | Nichia Corporation | Light-emitting device and method of manufacturing the light-emitting device |
CN113054042A (en) * | 2021-03-15 | 2021-06-29 | 河南城建学院 | Optoelectronic semiconductor component with substrate structure |
Also Published As
Publication number | Publication date |
---|---|
JP2008518461A (en) | 2008-05-29 |
US20110210360A1 (en) | 2011-09-01 |
TW200618341A (en) | 2006-06-01 |
TWI460877B (en) | 2014-11-11 |
EP1805807A2 (en) | 2007-07-11 |
KR20070070183A (en) | 2007-07-03 |
WO2006046981A3 (en) | 2006-07-13 |
TW201424046A (en) | 2014-06-16 |
US20100133555A1 (en) | 2010-06-03 |
US20090134421A1 (en) | 2009-05-28 |
EP2151873A3 (en) | 2010-03-24 |
WO2006046981A2 (en) | 2006-05-04 |
EP2151873A2 (en) | 2010-02-10 |
AU2005300077A1 (en) | 2006-05-04 |
CN101048880A (en) | 2007-10-03 |
US8598606B2 (en) | 2013-12-03 |
US7906793B2 (en) | 2011-03-15 |
KR101203818B1 (en) | 2012-11-22 |
JP2012089870A (en) | 2012-05-10 |
EP2151873B1 (en) | 2012-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7906793B2 (en) | Solid metal block semiconductor light emitting device mounting substrates | |
US20060124953A1 (en) | Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same | |
US10879435B2 (en) | Light emitting diodes, components and related methods | |
US7777247B2 (en) | Semiconductor light emitting device mounting substrates including a conductive lead extending therein | |
US9842973B2 (en) | Method of manufacturing ceramic LED packages with higher heat dissipation | |
KR100620844B1 (en) | Light-emitting apparatus and illuminating apparatus | |
CN103688378B (en) | Optical element, opto-electronic device and their manufacture method | |
US10361349B2 (en) | Light emitting diodes, components and related methods | |
TW200950160A (en) | Solid state lighting component | |
US9929326B2 (en) | LED package having mushroom-shaped lens with volume diffuser |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: CREE, INC., NORTH CAROLINA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEGLEY, GERALD H.;REEL/FRAME:015605/0923 Effective date: 20041019 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |