US20060232753A1 - Liquid immersion lithography system with tilted liquid flow - Google Patents
Liquid immersion lithography system with tilted liquid flow Download PDFInfo
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- US20060232753A1 US20060232753A1 US11/108,673 US10867305A US2006232753A1 US 20060232753 A1 US20060232753 A1 US 20060232753A1 US 10867305 A US10867305 A US 10867305A US 2006232753 A1 US2006232753 A1 US 2006232753A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Definitions
- the present invention is related to liquid immersion lithography, and more particularly, to efficient recirculation of liquid in immersion lithography systems.
- An integrated circuit integrates a large number of electronic circuit elements, including transistors.
- the circuit elements are manufactured and interconnected on a semiconductor substrate, e.g., on a single crystalline silicon wafer.
- the wafers undergo cycles of film deposition and lithography, in addition to other processing.
- Film deposition is the process of depositing a layer of material, e.g., insulating or metallic, over the entire substrate;
- lithography is the process of patterning the deposited layer.
- the first step in lithography involves coating the wafer with photoresist that is sensitive to particular radiation, typically ultra-violet light.
- exposure the substrate is exposed to a radiation pattern stored on a mask, also called a reticle.
- Radiation locally changes the physical or chemical properties of the photoresist, and the exposed (or unexposed) areas are selectively dissolved during a developing step that leaves behind a pattern of photoresist.
- the patterned photoresist provides a pattern for a subsequent etching step.
- the etching step removes undesired areas of the deposited layer, leaving behind structures associated with circuit elements, such as wires, resistors and transistors, and the like.
- the resolution can be decreased, i.e., improved, in one of three ways.
- the wavelength ⁇ of the projected light can be decreased. A shorter wavelength, however, may require new photoresist and a number of changes in the projection device, such as using a different light source and light filters, and special lenses for the projection optics.
- the resolution can be decreased by decreasing the adjustment factor k 1 . Decreasing k 1 may also require the use of different photoresist and high precision tools.
- the marginal angle ⁇ can be increased by increasing the size of the projection optics. The effect of this increase, however, is limited by the sine function above.
- One way to reduce the wavelength ⁇ of the projected light is through the use of immersion lithography, where a liquid is injected between the projection optics and the wafer, taking advantage of the higher refractive index of the liquid compared to air (and, therefore, resulting in a smaller effective wavelength ⁇ ).
- the immersion liquid is generally recirculated, using some form of an injection system to inject the liquid into the volume between the projection optics and the substrate, and extracted using some form of a extraction, or suction system to extract the liquid from the exposure area back into recirculation.
- the liquid can get contaminated, for example, due to pickup of particles from the air, or due to pickup of material from the photo resist that is being exposed.
- filtering systems are in place to remove the contaminants.
- not all of the liquid that is injected into the exposure area can actually be recirculated. This is due to the surface tension that exists between the liquid and the substrate surface.
- the present invention is directed to liquid immersion lithography system with tilted liquid flow that substantially obviates one or more of the problems and disadvantages of the related art.
- a liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate.
- the showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.
- a liquid immersion lithography system in another aspect, includes a projection optical system for exposing a substrate, an injection nozzle and a retrieval nozzle for delivering tilted liquid flow between the projection optical system and the substrate.
- the liquid flow is tilted at approximately 1 to 2 degrees relative to the substrate.
- an exposure system in order of light propagation, an illumination source, a condenser lens, a mask (or contrast device) and projection optics.
- a liquid delivery system provides liquid to an exposure area below the projection optics.
- the exposure system also includes means for providing tilted liquid flow of the liquid.
- an exposure system in another aspect, includes, in order of light propagation, an illumination source, a condenser lens, a mask and projection optics.
- a liquid delivery system provides liquid to an exposure area of a substrate. The substrate is tilted relative to a horizontal.
- FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid.
- FIG. 2 illustrates a close-up view of the tilted showerhead arrangement of FIG. 1 .
- FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system with a liquid in the exposure area.
- FIG. 4 illustrates a meniscus region A of FIG. 3 .
- FIG. 5 illustrates a meniscus region B of FIG. 3 .
- FIG. 6 illustrates a three-dimensional isometric view of the embodiment illustrated in FIGS. 1 -5.
- FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead.
- FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead.
- the lithographic system 700 (shown in side view) includes a light source (illumination source) 710 , such as a laser or a lamp, illumination optics 712 (such as a condenser lens), and a reticle (i.e., a, mask, or a contrast device) 714 , which is usually mounted on a reticle stage (not shown).
- the reticle 714 can be a plate with an exposure pattern on it, or a spatial light modulator array, such as used in maskless lithography.
- Light from the reticle 714 is imaged onto a wafer 718 using projection optics 716 .
- the wafer 718 is mounted on a wafer stage 720 .
- FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid.
- the projection optics 716 is mounted above a substrate, such as the semiconductor wafer 718 .
- One portion of a showerhead is used for liquid injection, and a second portion of the showerhead is used for liquid extraction.
- FIG. 1 thus illustrates a cross-sectional view (at the top) and a plan view (at the bottom) of one embodiment of the immersion lithography system with tilted liquid flow arrangement.
- a lower portion of the projection optical system 716 is located above the wafer 718 (note that the last element of the projection optical system 716 can be a prism, or a lens, or a glass window).
- a immersion head, or shower head 110 which is shown in cross section.
- Liquid flow enters the exposure area through an injection nozzle 106 , and exits through a retrieval, or suction, nozzle 108 . Note the different heights of the injection nozzle 106 and the retrieval nozzle 108 in the exposure area illustrated in more detail in FIG. 2 , which provides for a height differential, and therefore for a tilted liquid flow.
- the dimension of the gap between the lowest element of the projection optics 716 (which can be either a lens or a prism) and the surface of the substrate 718 is usually on the order of approximately one millimeter (typically ranging between about 0.5 millimeters and 2 millimeters).
- the relative arrangement of the two nozzles is such that there is a natural gravity-induced liquid flow from the injection showerhead to the extraction showerhead.
- the tilt can be relatively small, even as little as one or two degrees. Note that the important aspect is the relative arrangement of the injection and extraction nozzles, such that there is a relative tilt of the liquid flow compared to the plane of the wafer 102 (which is normally horizontal).
- FIG. 2 illustrates a close up view of the tilted nozzle arrangement. Note in particular the bottom surface of the showerhead, labeled X in FIG. 2 , which is tilted at approximately one or two degrees as shown in the figure. Note also that the suction nozzle 108 is located below a bottom surface 202 of the projection optical system 716 by a distance t (see left hand side of the figure).
- FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system, similar to FIG. 2 , but showing a liquid 302 in the exposure area, as would be the case during actual operation of the device. Note also a withdrawal pressure p w , and two regions A and B, which include two meniscus regions, discussed further below.
- FIG. 4 illustrates a meniscus region A from FIG. 3 .
- FIG. 6 is another illustration of the embodiment illustrated in FIGS. 1-5 , in this case, a three-dimensional isometric view. Shown in FIG. 6 is the wafer 718 positioned below the projection system 716 (only a portion of which is shown). The showerhead 110 is visible in the figure, with the liquid 302 flowing under the projection optical system 716 .
- the wafer 718 is kept perfectly horizontal (or, as horizontal as practical), to ensure good image quality.
- Such an approach is more complicated to implement than the embodiment described above, since tilting the entire lithographic tool may be undesirable or mechanically problematic.
- such a tilting of the entire lithographic tool will accomplish the same purpose—creation of a preferred direction of liquid flow even in the absence of suction pressure for extraction.
- the tilting effect can be simulated using forced air flow.
- an air pressure gradient in the direction from the injection port to the extraction port will also achieve a similar effect—that is, overcoming the surface tension forces that otherwise impede liquid flow.
Abstract
A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.
Description
- 1. Field of the Invention
- The present invention is related to liquid immersion lithography, and more particularly, to efficient recirculation of liquid in immersion lithography systems.
- 2. Description of the Related Art
- An integrated circuit (“IC”) integrates a large number of electronic circuit elements, including transistors. The circuit elements are manufactured and interconnected on a semiconductor substrate, e.g., on a single crystalline silicon wafer. During manufacturing, the wafers undergo cycles of film deposition and lithography, in addition to other processing. Film deposition is the process of depositing a layer of material, e.g., insulating or metallic, over the entire substrate; lithography is the process of patterning the deposited layer. The first step in lithography involves coating the wafer with photoresist that is sensitive to particular radiation, typically ultra-violet light. During the next step—exposure—the substrate is exposed to a radiation pattern stored on a mask, also called a reticle. Radiation locally changes the physical or chemical properties of the photoresist, and the exposed (or unexposed) areas are selectively dissolved during a developing step that leaves behind a pattern of photoresist. The patterned photoresist provides a pattern for a subsequent etching step. The etching step removes undesired areas of the deposited layer, leaving behind structures associated with circuit elements, such as wires, resistors and transistors, and the like.
- Highly integrated circuits require small circuit elements. Since the radiation pattern shapes the circuit elements, the smallest feature size depends on the resolution achieved in the lithography exposure step, or the resolution of the projection device used to project the radiation pattern onto the substrate. According to the Raleigh criterion, this resolution is proportional to the wavelength λ of the projected light and to an adjustment factor k1, and inversely proportional to the sine function of the marginal, or capture, angle θ of the projection optics, where:
Resolution=k 1*λ/sin(θ) - The resolution can be decreased, i.e., improved, in one of three ways. First, the wavelength λ of the projected light can be decreased. A shorter wavelength, however, may require new photoresist and a number of changes in the projection device, such as using a different light source and light filters, and special lenses for the projection optics. Second, the resolution can be decreased by decreasing the adjustment factor k1. Decreasing k1 may also require the use of different photoresist and high precision tools. Third, the marginal angle θ can be increased by increasing the size of the projection optics. The effect of this increase, however, is limited by the sine function above.
- One way to reduce the wavelength λ of the projected light is through the use of immersion lithography, where a liquid is injected between the projection optics and the wafer, taking advantage of the higher refractive index of the liquid compared to air (and, therefore, resulting in a smaller effective wavelength λ).
- One of the persistent problems in immersion lithography relates to ensuring purity and lack of contamination of the immersion liquid. The immersion liquid is generally recirculated, using some form of an injection system to inject the liquid into the volume between the projection optics and the substrate, and extracted using some form of a extraction, or suction system to extract the liquid from the exposure area back into recirculation. However, the liquid can get contaminated, for example, due to pickup of particles from the air, or due to pickup of material from the photo resist that is being exposed. Normally, filtering systems are in place to remove the contaminants. However, not all of the liquid that is injected into the exposure area can actually be recirculated. This is due to the surface tension that exists between the liquid and the substrate surface. Although most of the liquid can be extracted, using the suction pressure of the extraction/recirculation system, some droplets of liquid remain on the surface of the way of the substrate, together with their contaminants. Increasing the suction pressure generally does not help past a certain point, since this will increase the recirculation speed, but will not address the problems caused by the surface tension of the liquid.
- Even with the current designs, many liquid injection and extraction systems utilize a fairly complex showerhead design to deliver and extract the immersion liquid. However, even in such complex designs, the problem of the surface tension of the liquid is not entirely solved.
- Accordingly, what is needed is an approach that ensures that all of the injected liquid is collected by the extraction system in an immersion lithography tool.
- The present invention is directed to liquid immersion lithography system with tilted liquid flow that substantially obviates one or more of the problems and disadvantages of the related art.
- There is provided a liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.
- In another aspect, a liquid immersion lithography system includes a projection optical system for exposing a substrate, an injection nozzle and a retrieval nozzle for delivering tilted liquid flow between the projection optical system and the substrate. The liquid flow is tilted at approximately 1 to 2 degrees relative to the substrate.
- In another aspect, an exposure system includes, in order of light propagation, an illumination source, a condenser lens, a mask (or contrast device) and projection optics. A liquid delivery system provides liquid to an exposure area below the projection optics. The exposure system also includes means for providing tilted liquid flow of the liquid.
- In another aspect, an exposure system includes, in order of light propagation, an illumination source, a condenser lens, a mask and projection optics. A liquid delivery system provides liquid to an exposure area of a substrate. The substrate is tilted relative to a horizontal.
- Additional features and advantages of the invention will be set forth in the description that follows. Yet further features and advantages will be apparent to a person skilled in the art based on the description set forth herein or may be learned by practice of the invention. The advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the exemplary embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
-
FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid. -
FIG. 2 illustrates a close-up view of the tilted showerhead arrangement ofFIG. 1 . -
FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system with a liquid in the exposure area. -
FIG. 4 illustrates a meniscus region A ofFIG. 3 . -
FIG. 5 illustrates a meniscus region B ofFIG. 3 . -
FIG. 6 illustrates a three-dimensional isometric view of the embodiment illustrated in FIGS. 1-5. -
FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead. - Reference will now be made in detail to the embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
- The inventors have discovered a rather unexpected phenomenon:
- when the liquid flow in an immersion lithography system is tilted, even by a relatively small angle, as little as one or two degrees, the tilt, and the corresponding effect of gravity on the liquid flow, is sufficient to overcome the residual surface tension forces acting on the liquid. Accordingly, with such a tilted arrangement, the pooling of the immersion liquid in certain portions of the exposure area can be avoided, reducing the possibility of contamination.
-
FIG. 7 shows an exemplary photolithographic system that uses the tilted showerhead. As shown inFIG. 7 , the lithographic system 700 (shown in side view) includes a light source (illumination source) 710, such as a laser or a lamp, illumination optics 712 (such as a condenser lens), and a reticle (i.e., a, mask, or a contrast device) 714, which is usually mounted on a reticle stage (not shown). Note that thereticle 714 can be a plate with an exposure pattern on it, or a spatial light modulator array, such as used in maskless lithography. Light from thereticle 714 is imaged onto awafer 718 usingprojection optics 716. Thewafer 718 is mounted on awafer stage 720. -
FIG. 1 illustrates one embodiment of the invention that uses a tilted showerhead for injection and extraction of the immersion liquid. As shown inFIG. 1 , theprojection optics 716 is mounted above a substrate, such as thesemiconductor wafer 718. One portion of a showerhead is used for liquid injection, and a second portion of the showerhead is used for liquid extraction. -
FIG. 1 thus illustrates a cross-sectional view (at the top) and a plan view (at the bottom) of one embodiment of the immersion lithography system with tilted liquid flow arrangement. A lower portion of the projectionoptical system 716 is located above the wafer 718 (note that the last element of the projectionoptical system 716 can be a prism, or a lens, or a glass window). Also shown inFIG. 1 is a immersion head, orshower head 110, which is shown in cross section. Liquid flow enters the exposure area through aninjection nozzle 106, and exits through a retrieval, or suction,nozzle 108. Note the different heights of theinjection nozzle 106 and theretrieval nozzle 108 in the exposure area illustrated in more detail inFIG. 2 , which provides for a height differential, and therefore for a tilted liquid flow. - The dimension of the gap between the lowest element of the projection optics 716 (which can be either a lens or a prism) and the surface of the
substrate 718 is usually on the order of approximately one millimeter (typically ranging between about 0.5 millimeters and 2 millimeters). Thus, it is possible to leave one of the nozzles (either injection or extraction) in its original place and correspondingly raise or lower the other nozzle, so as to create a tilt. - The relative arrangement of the two nozzles is such that there is a natural gravity-induced liquid flow from the injection showerhead to the extraction showerhead. As noted above, the tilt can be relatively small, even as little as one or two degrees. Note that the important aspect is the relative arrangement of the injection and extraction nozzles, such that there is a relative tilt of the liquid flow compared to the plane of the wafer 102 (which is normally horizontal).
-
FIG. 2 illustrates a close up view of the tilted nozzle arrangement. Note in particular the bottom surface of the showerhead, labeled X inFIG. 2 , which is tilted at approximately one or two degrees as shown in the figure. Note also that thesuction nozzle 108 is located below abottom surface 202 of the projectionoptical system 716 by a distance t (see left hand side of the figure). -
FIG. 3 is another illustration of the exposure area of a liquid immersion lithography system, similar toFIG. 2 , but showing a liquid 302 in the exposure area, as would be the case during actual operation of the device. Note also a withdrawal pressure pw, and two regions A and B, which include two meniscus regions, discussed further below. -
FIG. 4 illustrates a meniscus region A fromFIG. 3 . Note a height “h,” which refers to a gap height, and the shape of the meniscus, which is outward. - The pressure in the liquid adjacent to the meniscus (pm) will be reduced due to the effect of surface tension. The exact pressure at this location will depend on the detailed shape of the meniscus and include effects related to the contact angles. However, an order of magnitude estimate of this pressure depression is given by:
- where pamb is the ambient pressure, pw is the withdrawal pressure, σ is the surface tension and h is the gap height (see
FIG. 4 ). (See generally J. Fay, Introduction to Fluid Mechanics, MIT Press, Cambridge, Mass. (1994), which is incorporated herein by reference. -
FIG. 5 illustrates a region B fromFIG. 3 with a gap height “H” between theshowerhead 110 and thewafer 718. Note that the meniscus is inward shaped, with the pressure in the liquid given by: - Because H>h, pM>pm and liquid will start flowing from the side that has the bigger gap.
-
FIG. 6 is another illustration of the embodiment illustrated inFIGS. 1-5 , in this case, a three-dimensional isometric view. Shown inFIG. 6 is thewafer 718 positioned below the projection system 716 (only a portion of which is shown). Theshowerhead 110 is visible in the figure, with the liquid 302 flowing under the projectionoptical system 716. - In another embodiment, it is possible to accomplish the tilting effect by tilting the wafer surface. Normally, in conventional systems, the
wafer 718 is kept perfectly horizontal (or, as horizontal as practical), to ensure good image quality. However, it is possible to tilt the wafer 718 (and, correspondingly, the rest of the exposure optics, such that the wafer surface is tilted by approximately one or two degrees, so as to encourage liquid flow in the direction from the injection port to the extraction port. Such an approach is more complicated to implement than the embodiment described above, since tilting the entire lithographic tool may be undesirable or mechanically problematic. However, such a tilting of the entire lithographic tool will accomplish the same purpose—creation of a preferred direction of liquid flow even in the absence of suction pressure for extraction. - As yet a third embodiment, the tilting effect can be simulated using forced air flow. In other words, even if the injection and extraction ports are level with each other, and the substrate is also oriented perfectly horizontally, an air pressure gradient in the direction from the injection port to the extraction port will also achieve a similar effect—that is, overcoming the surface tension forces that otherwise impede liquid flow.
- While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example, and not limitation. It will be apparent to persons skilled in the relevant art that various changes in form and detail can be made therein without departing from the spirit and scope of the invention.
Claims (8)
1. A liquid immersion lithography system, comprising:
a projection optical system to direct electromagnetic radiation onto a substrate; and
a showerhead to deliver liquid flow between the projection optical system and the substrate,
wherein the showerhead includes an injection nozzle and a retrieval nozzle located at different heights.
2. The liquid immersion lithography system of claim 1 , wherein the liquid flow is tilted relative to the substrate.
3. The liquid immersion lithography system of claim 1 , wherein a direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.
4. A liquid immersion lithography system comprising:
a projection optical system to expose a substrate; and
an injection nozzle and a retrieval nozzle to deliver tilted liquid flow between the projection optical system and the substrate.
5. The liquid immersion lithography system of claim 4 , wherein the tilted liquid flow is tilted at approximately 1 to 2 degrees relative to the substrate.
6. An exposure system comprising:
in order of light propagation, an illumination source, a condenser lens, a contrast device and projection optics;
a liquid delivery system to provide liquid to an exposure area below the projection optics; and
means for providing tilted liquid flow of the liquid.
7. An exposure system comprising:
in order of light propagation, an illumination source, a condenser lens, a contrast device and projection optics;
a liquid delivery system to provide liquid to an exposure area of a substrate; and
means for tilting the substrate relative to a horizontal.
8. The system of claim 6 , wherein the means for tilting also tilts the projection optics.
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
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US11/108,673 US20060232753A1 (en) | 2005-04-19 | 2005-04-19 | Liquid immersion lithography system with tilted liquid flow |
US11/403,196 US7256864B2 (en) | 2005-04-19 | 2006-04-13 | Liquid immersion lithography system having a tilted showerhead relative to a substrate |
TW099116721A TWI421652B (en) | 2005-04-19 | 2006-04-18 | Immersion lithography system and method |
TW095113826A TWI336426B (en) | 2005-04-19 | 2006-04-18 | Immersion lithography system and method for manufacturing a device in a lithography apparatus |
JP2008507572A JP4848003B2 (en) | 2005-04-19 | 2006-04-19 | Immersion lithography system with tilted showerhead and immersion lithography method |
CN2006800132610A CN101164015B (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead |
KR1020087025416A KR101131477B1 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system and liquid immersion lithography method |
EP06733009A EP1872175A1 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead |
PCT/NL2006/000202 WO2006112699A1 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead |
US11/911,704 US8203693B2 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
KR1020077023958A KR100897863B1 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system and liquid immersion lithography method |
CN2010101174178A CN101776848B (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system |
US11/586,639 US7253879B2 (en) | 2005-04-19 | 2006-10-26 | Liquid immersion lithography system with tilted liquid flow |
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US11/108,673 US20060232753A1 (en) | 2005-04-19 | 2005-04-19 | Liquid immersion lithography system with tilted liquid flow |
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US11/403,196 Continuation-In-Part US7256864B2 (en) | 2005-04-19 | 2006-04-13 | Liquid immersion lithography system having a tilted showerhead relative to a substrate |
US11/586,639 Continuation US7253879B2 (en) | 2005-04-19 | 2006-10-26 | Liquid immersion lithography system with tilted liquid flow |
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US11/403,196 Expired - Fee Related US7256864B2 (en) | 2005-04-19 | 2006-04-13 | Liquid immersion lithography system having a tilted showerhead relative to a substrate |
US11/911,704 Expired - Fee Related US8203693B2 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
US11/586,639 Expired - Fee Related US7253879B2 (en) | 2005-04-19 | 2006-10-26 | Liquid immersion lithography system with tilted liquid flow |
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US11/403,196 Expired - Fee Related US7256864B2 (en) | 2005-04-19 | 2006-04-13 | Liquid immersion lithography system having a tilted showerhead relative to a substrate |
US11/911,704 Expired - Fee Related US8203693B2 (en) | 2005-04-19 | 2006-04-19 | Liquid immersion lithography system comprising a tilted showerhead relative to a substrate |
US11/586,639 Expired - Fee Related US7253879B2 (en) | 2005-04-19 | 2006-10-26 | Liquid immersion lithography system with tilted liquid flow |
Country Status (7)
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US (4) | US20060232753A1 (en) |
EP (1) | EP1872175A1 (en) |
JP (1) | JP4848003B2 (en) |
KR (2) | KR100897863B1 (en) |
CN (2) | CN101776848B (en) |
TW (2) | TWI421652B (en) |
WO (1) | WO2006112699A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20080032234A1 (en) * | 2004-09-17 | 2008-02-07 | Takeyuki Mizutani | Exposure Apparatus, Exposure Method, and Method for Producing Device |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
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NL2004362A (en) * | 2009-04-10 | 2010-10-12 | Asml Netherlands Bv | A fluid handling device, an immersion lithographic apparatus and a device manufacturing method. |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
Citations (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
US3648587A (en) * | 1967-10-20 | 1972-03-14 | Eastman Kodak Co | Focus control for optical instruments |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
US4396705A (en) * | 1980-09-19 | 1983-08-02 | Hitachi, Ltd. | Pattern forming method and pattern forming apparatus using exposures in a liquid |
US4405701A (en) * | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
US4480910A (en) * | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
US5715039A (en) * | 1995-05-19 | 1998-02-03 | Hitachi, Ltd. | Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6236634B1 (en) * | 1996-08-26 | 2001-05-22 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US20020020821A1 (en) * | 2000-08-08 | 2002-02-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6560032B2 (en) * | 2000-03-27 | 2003-05-06 | Olympus Optical Co., Ltd. | Liquid immersion lens system and optical apparatus using the same |
US20030123040A1 (en) * | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6603130B1 (en) * | 1999-04-19 | 2003-08-05 | Asml Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses |
US20030174408A1 (en) * | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6633365B2 (en) * | 2000-12-11 | 2003-10-14 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US20040000627A1 (en) * | 2002-06-28 | 2004-01-01 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Method for focus detection and an imaging system with a focus-detection system |
US20040075895A1 (en) * | 2002-10-22 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US20040103950A1 (en) * | 2002-04-04 | 2004-06-03 | Seiko Epson Corporation | Liquid quantity determination unit, photolithography apparatus, and liquid quantity determination method |
US20040109237A1 (en) * | 2002-12-09 | 2004-06-10 | Carl Zeiss Smt Ag | Projection objective, especially for microlithography, and method for adjusting a projection objective |
US20040114117A1 (en) * | 2002-11-18 | 2004-06-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040118184A1 (en) * | 2002-12-19 | 2004-06-24 | Asml Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
US20040119954A1 (en) * | 2002-12-10 | 2004-06-24 | Miyoko Kawashima | Exposure apparatus and method |
US20040125351A1 (en) * | 2002-12-30 | 2004-07-01 | Krautschik Christof Gabriel | Immersion lithography |
US20040136494A1 (en) * | 2002-11-12 | 2004-07-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040135099A1 (en) * | 2002-11-29 | 2004-07-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040160582A1 (en) * | 2002-11-12 | 2004-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040165159A1 (en) * | 2002-11-12 | 2004-08-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040207824A1 (en) * | 2002-11-12 | 2004-10-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US20040211920A1 (en) * | 2002-11-12 | 2004-10-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040224265A1 (en) * | 2003-05-09 | 2004-11-11 | Matsushita Electric Industrial Co., Ltd | Pattern formation method and exposure system |
US20040233405A1 (en) * | 2003-05-23 | 2004-11-25 | Takashi Kato | Projection optical system, exposure apparatus, and device manufacturing method |
US20040239954A1 (en) * | 2003-05-28 | 2004-12-02 | Joerg Bischoff | Resolution enhanced optical metrology |
US20040253547A1 (en) * | 2003-06-12 | 2004-12-16 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
US20040257544A1 (en) * | 2003-06-19 | 2004-12-23 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US20050002004A1 (en) * | 2003-06-27 | 2005-01-06 | Asml Nitherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050007569A1 (en) * | 2003-05-13 | 2005-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050007570A1 (en) * | 2003-05-30 | 2005-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US20050018155A1 (en) * | 2003-06-27 | 2005-01-27 | Asml Netherlands B. V. | Lithographic apparatus and device manufacturing method |
US20050018156A1 (en) * | 2003-06-30 | 2005-01-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050024609A1 (en) * | 2003-06-11 | 2005-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050030498A1 (en) * | 2003-07-28 | 2005-02-10 | Asml Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US20050030501A1 (en) * | 2003-06-30 | 2005-02-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050030506A1 (en) * | 2002-03-08 | 2005-02-10 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US20050036184A1 (en) * | 2003-08-11 | 2005-02-17 | Yee-Chia Yeo | Lithography apparatus for manufacture of integrated circuits |
US20050037269A1 (en) * | 2003-08-11 | 2005-02-17 | Levinson Harry J. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US20050036121A1 (en) * | 2002-11-12 | 2005-02-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050036183A1 (en) * | 2003-08-11 | 2005-02-17 | Yee-Chia Yeo | Immersion fluid for immersion Lithography, and method of performing immersion lithography |
US20050046934A1 (en) * | 2003-08-29 | 2005-03-03 | Tokyo Electron Limited | Method and system for drying a substrate |
US20050048223A1 (en) * | 2003-09-02 | 2005-03-03 | Pawloski Adam R. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
US20050068499A1 (en) * | 2003-05-30 | 2005-03-31 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
US20050078287A1 (en) * | 2003-08-29 | 2005-04-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050078286A1 (en) * | 2003-08-29 | 2005-04-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050231695A1 (en) * | 2004-04-15 | 2005-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for immersion lithography using high PH immersion fluid |
US20060077367A1 (en) * | 2003-05-23 | 2006-04-13 | Nikon Corporation | Exposure apparatus and method for producing device |
US20060098178A1 (en) * | 2002-12-10 | 2006-05-11 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE206607C (en) | ||||
DE224448C (en) | ||||
DE242880C (en) | ||||
DE221563C (en) | ||||
ATE1462T1 (en) | 1979-07-27 | 1982-08-15 | Werner W. Dr. Tabarelli | OPTICAL LITHOGRAPHY PROCESS AND DEVICE FOR COPYING A PATTERN ONTO A SEMICONDUCTOR DISC. |
FR2474708B1 (en) | 1980-01-24 | 1987-02-20 | Dme | HIGH-RESOLUTION MICROPHOTOLITHOGRAPHY PROCESS |
JPS58202448A (en) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | Exposing device |
DD206607A1 (en) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | METHOD AND DEVICE FOR ELIMINATING INTERFERENCE EFFECTS |
DD242880A1 (en) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
DD221563A1 (en) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | IMMERSIONS OBJECTIVE FOR THE STEP-BY-STEP PROJECTION IMAGING OF A MASK STRUCTURE |
DD224448A1 (en) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | DEVICE FOR PHOTOLITHOGRAPHIC STRUCTURAL TRANSMISSION |
JPS6265326A (en) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | Exposure device |
JPS62121417A (en) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | Liquid-immersion objective lens device |
JPS63157419A (en) | 1986-12-22 | 1988-06-30 | Toshiba Corp | Fine pattern transfer apparatus |
JPH03209479A (en) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | Exposure method |
JPH04305915A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH04305917A (en) | 1991-04-02 | 1992-10-28 | Nikon Corp | Adhesion type exposure device |
JPH06124873A (en) | 1992-10-09 | 1994-05-06 | Canon Inc | Liquid-soaking type projection exposure apparatus |
JP2520833B2 (en) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | Immersion type liquid treatment device |
JPH07220990A (en) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | Pattern forming method and exposure apparatus therefor |
JP3612920B2 (en) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | Exposure apparatus for producing an optical recording medium master |
JPH10255319A (en) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | Master disk exposure device and method therefor |
JP3747566B2 (en) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | Immersion exposure equipment |
JP3817836B2 (en) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | EXPOSURE APPARATUS, ITS MANUFACTURING METHOD, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | Projection exposure method and projection aligner |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP2000058436A (en) | 1998-08-11 | 2000-02-25 | Nikon Corp | Projection aligner and exposure method |
JP4504479B2 (en) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | Immersion objective lens for microscope |
DE10043315C1 (en) * | 2000-09-02 | 2002-06-20 | Zeiss Carl | Projection exposure system |
TWI242691B (en) | 2002-08-23 | 2005-11-01 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10253679A1 (en) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optical arrangement used in the production of semiconductor components comprises a lens system arranged behind a mask, and a medium having a specified refractive index lying between the mask and the lens system |
SG115590A1 (en) * | 2002-11-27 | 2005-10-28 | Asml Netherlands Bv | Lithographic projection apparatus and device manufacturing method |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
JP4232449B2 (en) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
WO2004053950A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
DE10257766A1 (en) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Method for setting a desired optical property of a projection lens and microlithographic projection exposure system |
EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | Exposure apparatus and method for manufacturing device |
WO2004053957A1 (en) | 2002-12-10 | 2004-06-24 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
KR101157002B1 (en) | 2002-12-10 | 2012-06-21 | 가부시키가이샤 니콘 | Exposure apparatus and method for manufacturing device |
KR20050085026A (en) | 2002-12-10 | 2005-08-29 | 가부시키가이샤 니콘 | Optical device and projection exposure apparatus using such optical device |
SG2011031200A (en) | 2002-12-10 | 2014-09-26 | Nippon Kogaku Kk | Exposure apparatus and device manufacturing method |
JP4352874B2 (en) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | Exposure apparatus and device manufacturing method |
SG150388A1 (en) | 2002-12-10 | 2009-03-30 | Nikon Corp | Exposure apparatus and method for producing device |
WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
USRE46433E1 (en) | 2002-12-19 | 2017-06-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
DE10261775A1 (en) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Device for the optical measurement of an imaging system |
KR20180126102A (en) | 2003-02-26 | 2018-11-26 | 가부시키가이샤 니콘 | Exposure apparatus and method, and method of producing apparatus |
KR101345474B1 (en) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | Exposure system and device production method |
ATE426914T1 (en) | 2003-04-07 | 2009-04-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR PRODUCING AN APPARATUS |
KR20110104084A (en) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | Immersion lithography fluid control system |
WO2004090634A2 (en) * | 2003-04-10 | 2004-10-21 | Nikon Corporation | Environmental system including vaccum scavange for an immersion lithography apparatus |
JP4656057B2 (en) | 2003-04-10 | 2011-03-23 | 株式会社ニコン | Electro-osmotic element for immersion lithography equipment |
EP1611486B1 (en) | 2003-04-10 | 2016-03-16 | Nikon Corporation | Environmental system including a transport region for an immersion lithography apparatus |
EP1611482B1 (en) | 2003-04-10 | 2015-06-03 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG2013077797A (en) | 2003-04-11 | 2017-02-27 | Nippon Kogaku Kk | Cleanup method for optics in immersion lithography |
SG139736A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
KR101369582B1 (en) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | Optical arrangement of autofocus elements for use with immersion lithography |
TWI237307B (en) | 2003-05-01 | 2005-08-01 | Nikon Corp | Optical projection system, light exposing apparatus and light exposing method |
KR101516141B1 (en) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | Projection optical system, and exposure apparatus and exposure method |
EP1477856A1 (en) | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100437358C (en) | 2003-05-15 | 2008-11-26 | 株式会社尼康 | Exposure apparatus and device manufacturing method |
TWI470671B (en) | 2003-05-23 | 2015-01-21 | 尼康股份有限公司 | Exposure method and exposure apparatus, and device manufacturing method |
KR20110110320A (en) | 2003-05-28 | 2011-10-06 | 가부시키가이샤 니콘 | Exposure method, exposure device, and device manufacturing method |
KR101290021B1 (en) | 2003-06-13 | 2013-07-30 | 가부시키가이샤 니콘 | Exposure method, substrate stage, exposure apparatus and method for manufacturing device |
KR101931923B1 (en) | 2003-06-19 | 2018-12-21 | 가부시키가이샤 니콘 | Exposure device and device producing method |
JP3862678B2 (en) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | Exposure apparatus and device manufacturing method |
EP1498777A1 (en) * | 2003-07-15 | 2005-01-19 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
JP2006528835A (en) | 2003-07-24 | 2006-12-21 | カール・ツアイス・エスエムテイ・アーゲー | Microlithography projection exposure apparatus and method for introducing immersion liquid into immersion space |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
CN101303536B (en) | 2003-08-29 | 2011-02-09 | 株式会社尼康 | Exposure apparatus and device producing method |
CN100498533C (en) * | 2003-09-25 | 2009-06-10 | 英飞凌科技股份公司 | Immersion lithography method and device for illuminating a substrate |
EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | Substrate transporting apparatus and method, exposure apparatus and method, and device producing method |
JP4323946B2 (en) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | Exposure equipment |
US20060232753A1 (en) * | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
-
2005
- 2005-04-19 US US11/108,673 patent/US20060232753A1/en not_active Abandoned
-
2006
- 2006-04-13 US US11/403,196 patent/US7256864B2/en not_active Expired - Fee Related
- 2006-04-18 TW TW099116721A patent/TWI421652B/en not_active IP Right Cessation
- 2006-04-18 TW TW095113826A patent/TWI336426B/en not_active IP Right Cessation
- 2006-04-19 US US11/911,704 patent/US8203693B2/en not_active Expired - Fee Related
- 2006-04-19 WO PCT/NL2006/000202 patent/WO2006112699A1/en active Application Filing
- 2006-04-19 KR KR1020077023958A patent/KR100897863B1/en not_active IP Right Cessation
- 2006-04-19 KR KR1020087025416A patent/KR101131477B1/en not_active IP Right Cessation
- 2006-04-19 CN CN2010101174178A patent/CN101776848B/en not_active Expired - Fee Related
- 2006-04-19 JP JP2008507572A patent/JP4848003B2/en not_active Expired - Fee Related
- 2006-04-19 CN CN2006800132610A patent/CN101164015B/en not_active Expired - Fee Related
- 2006-04-19 EP EP06733009A patent/EP1872175A1/en not_active Withdrawn
- 2006-10-26 US US11/586,639 patent/US7253879B2/en not_active Expired - Fee Related
Patent Citations (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648587A (en) * | 1967-10-20 | 1972-03-14 | Eastman Kodak Co | Focus control for optical instruments |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
US4396705A (en) * | 1980-09-19 | 1983-08-02 | Hitachi, Ltd. | Pattern forming method and pattern forming apparatus using exposures in a liquid |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
US4480910A (en) * | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
US4405701A (en) * | 1981-07-29 | 1983-09-20 | Western Electric Co. | Methods of fabricating a photomask |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
US5715039A (en) * | 1995-05-19 | 1998-02-03 | Hitachi, Ltd. | Projection exposure apparatus and method which uses multiple diffraction gratings in order to produce a solid state device with fine patterns |
US6236634B1 (en) * | 1996-08-26 | 2001-05-22 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US6191429B1 (en) * | 1996-10-07 | 2001-02-20 | Nikon Precision Inc. | Projection exposure apparatus and method with workpiece area detection |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
US6603130B1 (en) * | 1999-04-19 | 2003-08-05 | Asml Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatuses |
US6560032B2 (en) * | 2000-03-27 | 2003-05-06 | Olympus Optical Co., Ltd. | Liquid immersion lens system and optical apparatus using the same |
US20020020821A1 (en) * | 2000-08-08 | 2002-02-21 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
US6649093B2 (en) * | 2000-08-08 | 2003-11-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing an optically scannable information carrier |
US6633365B2 (en) * | 2000-12-11 | 2003-10-14 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US6844919B2 (en) * | 2000-12-11 | 2005-01-18 | Yutaka Suenaga | Projection optical system and exposure apparatus having the projection optical system |
US20040021844A1 (en) * | 2000-12-11 | 2004-02-05 | Nikon Corporation | Projection optical system and exposure apparatus having the projection optical system |
US20020163629A1 (en) * | 2001-05-07 | 2002-11-07 | Michael Switkes | Methods and apparatus employing an index matching medium |
US6600547B2 (en) * | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US20030123040A1 (en) * | 2001-11-07 | 2003-07-03 | Gilad Almogy | Optical spot grid array printer |
US20030174408A1 (en) * | 2002-03-08 | 2003-09-18 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US20050030506A1 (en) * | 2002-03-08 | 2005-02-10 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
US20040103950A1 (en) * | 2002-04-04 | 2004-06-03 | Seiko Epson Corporation | Liquid quantity determination unit, photolithography apparatus, and liquid quantity determination method |
US20040000627A1 (en) * | 2002-06-28 | 2004-01-01 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Method for focus detection and an imaging system with a focus-detection system |
US20040075895A1 (en) * | 2002-10-22 | 2004-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
US20040160582A1 (en) * | 2002-11-12 | 2004-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050036121A1 (en) * | 2002-11-12 | 2005-02-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040136494A1 (en) * | 2002-11-12 | 2004-07-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040165159A1 (en) * | 2002-11-12 | 2004-08-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040207824A1 (en) * | 2002-11-12 | 2004-10-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040211920A1 (en) * | 2002-11-12 | 2004-10-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040114117A1 (en) * | 2002-11-18 | 2004-06-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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US20040109237A1 (en) * | 2002-12-09 | 2004-06-10 | Carl Zeiss Smt Ag | Projection objective, especially for microlithography, and method for adjusting a projection objective |
US20040119954A1 (en) * | 2002-12-10 | 2004-06-24 | Miyoko Kawashima | Exposure apparatus and method |
US20060098178A1 (en) * | 2002-12-10 | 2006-05-11 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20040118184A1 (en) * | 2002-12-19 | 2004-06-24 | Asml Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US20040125351A1 (en) * | 2002-12-30 | 2004-07-01 | Krautschik Christof Gabriel | Immersion lithography |
US20040224265A1 (en) * | 2003-05-09 | 2004-11-11 | Matsushita Electric Industrial Co., Ltd | Pattern formation method and exposure system |
US20050007569A1 (en) * | 2003-05-13 | 2005-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060077367A1 (en) * | 2003-05-23 | 2006-04-13 | Nikon Corporation | Exposure apparatus and method for producing device |
US20040233405A1 (en) * | 2003-05-23 | 2004-11-25 | Takashi Kato | Projection optical system, exposure apparatus, and device manufacturing method |
US20040239954A1 (en) * | 2003-05-28 | 2004-12-02 | Joerg Bischoff | Resolution enhanced optical metrology |
US20050007570A1 (en) * | 2003-05-30 | 2005-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050068499A1 (en) * | 2003-05-30 | 2005-03-31 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus |
US20050024609A1 (en) * | 2003-06-11 | 2005-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20040253547A1 (en) * | 2003-06-12 | 2004-12-16 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
US20040257544A1 (en) * | 2003-06-19 | 2004-12-23 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
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US6844206B1 (en) * | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US20050046934A1 (en) * | 2003-08-29 | 2005-03-03 | Tokyo Electron Limited | Method and system for drying a substrate |
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Also Published As
Publication number | Publication date |
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KR100897863B1 (en) | 2009-05-18 |
WO2006112699A1 (en) | 2006-10-26 |
US8203693B2 (en) | 2012-06-19 |
US20060238721A1 (en) | 2006-10-26 |
US20070041002A1 (en) | 2007-02-22 |
US20100053574A1 (en) | 2010-03-04 |
KR20070114215A (en) | 2007-11-29 |
US7253879B2 (en) | 2007-08-07 |
CN101164015A (en) | 2008-04-16 |
TW200702947A (en) | 2007-01-16 |
JP4848003B2 (en) | 2011-12-28 |
TWI336426B (en) | 2011-01-21 |
JP2008537356A (en) | 2008-09-11 |
CN101776848B (en) | 2012-07-04 |
TWI421652B (en) | 2014-01-01 |
EP1872175A1 (en) | 2008-01-02 |
CN101776848A (en) | 2010-07-14 |
CN101164015B (en) | 2010-11-24 |
KR101131477B1 (en) | 2012-04-12 |
KR20080096609A (en) | 2008-10-30 |
TW201102770A (en) | 2011-01-16 |
US7256864B2 (en) | 2007-08-14 |
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