US20060237061A1 - In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration - Google Patents

In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration Download PDF

Info

Publication number
US20060237061A1
US20060237061A1 US11/453,700 US45370006A US2006237061A1 US 20060237061 A1 US20060237061 A1 US 20060237061A1 US 45370006 A US45370006 A US 45370006A US 2006237061 A1 US2006237061 A1 US 2006237061A1
Authority
US
United States
Prior art keywords
gas
active
active gas
dispensing
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US11/453,700
Other versions
US7325560B2 (en
Inventor
Jose Arno
James Dietz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/453,700 priority Critical patent/US7325560B2/en
Publication of US20060237061A1 publication Critical patent/US20060237061A1/en
Application granted granted Critical
Publication of US7325560B2 publication Critical patent/US7325560B2/en
Assigned to GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT reassignment GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ADVANCED TECHNOLOGY MATERIALS, INC., ATMI PACKAGING, INC., ATMI, INC., ENTEGRIS, INC., POCO GRAPHITE, INC.
Assigned to GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT reassignment GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ADVANCED TECHNOLOGY MATERIALS, INC., ATMI PACKAGING, INC., ATMI, INC., ENTEGRIS, INC., POCO GRAPHITE, INC.
Assigned to ENTEGRIS, INC. reassignment ENTEGRIS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ADVANCED TECHNOLOGY MATERIALS, INC.
Assigned to ENTEGRIS, INC., ADVANCED TECHNOLOGY MATERIALS, INC., POCO GRAPHITE, INC., ATMI, INC., ATMI PACKAGING, INC. reassignment ENTEGRIS, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Assigned to POCO GRAPHITE, INC., ENTEGRIS, INC., ATMI, INC., ADVANCED TECHNOLOGY MATERIALS, INC., ATMI PACKAGING, INC. reassignment POCO GRAPHITE, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Assigned to GOLDMAN SACHS BANK USA reassignment GOLDMAN SACHS BANK USA SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ENTEGRIS, INC., SAES PURE GAS, INC.
Assigned to MORGAN STANLEY SENIOR FUNDING, INC. reassignment MORGAN STANLEY SENIOR FUNDING, INC. ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Assignors: GOLDMAN SACHS BANK USA
Assigned to TRUIST BANK, AS NOTES COLLATERAL AGENT reassignment TRUIST BANK, AS NOTES COLLATERAL AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CMC MATERIALS, INC., ENTEGRIS GP, INC., ENTEGRIS, INC., INTERNATIONAL TEST SOLUTIONS, LLC, POCO GRAPHITE, INC., QED TECHNOLOGIES INTERNATIONAL, INC.
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/0318Processes
    • Y10T137/0324With control of flow by a condition or characteristic of a fluid
    • Y10T137/0329Mixing of plural fluids of diverse characteristics or conditions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/2496Self-proportioning or correlating systems
    • Y10T137/2499Mixture condition maintaining or sensing
    • Y10T137/2509By optical or chemical property
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/87571Multiple inlet with single outlet
    • Y10T137/87676With flow control

Definitions

  • the present invention relates to apparatus and method for supplying dilute gases at predetermined concentrations, e.g., as source gas for ion implantation doping of semiconductor materials.
  • the semiconductor industry uses a wide variety of dilute gases in applications where the source material is highly toxic or hazardous and the dosage of active gas species is small.
  • source gases such as arsine, phosphine, and germane in highly dilute states.
  • arsenic may be introduced in a semiconductor film for doping thereof, from a dilute arsine/hydrogen gas mixture.
  • a source gas of low arsine content e.g., 50 parts per million (ppm) may be further diluted with hydrogen to achieve a desired hydrogen/arsine gas mixture.
  • the flows of the dilute arsine starting material and the diluent hydrogen that is added thereto to form the final dilute arsine gas mixture can be controlled by mass flow controllers, to deliver a metered amount of the final diluted arsine to the vapor deposition tool.
  • a first category of dilute gas supply techniques utilizes pre-mixed high-pressure gas mixtures (containing the low-concentration active gas component) as the source gas medium, as dispensed for use from high-pressure gas supply vessels such as pressurized gas cylinders.
  • This gas supply approach has the following deficiencies:
  • the second general category of dilute gas supply techniques involves in-situ generation of gas, using solids or liquid raw materials to generate the desired gas species through chemical reaction.
  • In-situ gas generation has the following associated deficiencies:
  • the present invention relates to apparatus and method for delivery of dilute active gas, e.g., to a downstream active gas-consuming process unit of a semiconductor manufacturing plant.
  • the present invention relates to an system for delivery of dilute gases, comprising:
  • a gas flow metering device for dispensing of the active gas at a predetermined flow rate
  • a mixing device arranged to mix active gas from the neat active gas source that is dispensed at said predetermined flow rate by the gas flow metering device, with diluent gas to form a diluted active gas mixture;
  • a monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively adjust the gas flow metering device, to control the dispensing rate of the active gas, and maintain a predetermined concentration of active gas in the diluted active gas mixture.
  • the invention relates to a system for delivery of dilute fluid, comprising:
  • a fluid flow metering device for dispensing of the neat active gas at a predetermined flow rate
  • a mixing device arranged to mix active fluid from the active fluid source that is dispensed at said predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture
  • a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.
  • Yet another aspect of the invention relates to a method for delivery of dilute gas, comprising:
  • a still further aspect of the invention relates to a method for delivery of dilute fluid, comprising:
  • FIG. 1 is a schematic representation of a dilute gas supply system according to one embodiment of the present invention.
  • FIG. 2 is a graph of vacuum pressure, in torr as a function of flow rate in liters per minute, illustrating the vacuum levels achieved using a mini-venturi in the practice of the present invention.
  • FIG. 3 is a graph showing FT-IR signal of carbon tetrafluoride concentration in parts per million as a function of time, in hours: minutes: seconds, and corresponding IR photometer signal (reference/active) as a function of time.
  • FIG. 4 is a calibration curve plotted as carbon tetrafluoride concentration, in parts per million, as a function of FT-IR response (reference/active) and showing the corresponding calibration algorithm.
  • the present invention is based on the discovery of a highly efficient and cost-effective system for delivery of dilute gases, utilizing a neat active gas source, a diluent gas source, a gas flow metering device for dispensing of the neat active gas, a dynamic mixing device arranged to mix the neat active gas and the diluent gas for forming a diluted active gas mixture, and a monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively control the dispensing rate of the neat active gas, to achieve a predetermined concentration of active gas in the diluted active gas mixture.
  • the gas flow metering device comprises a mass flow controller in a gas flow line interconnecting the neat active gas source and the dynamic mixing device
  • the monitor comprises an in-line gas analyzer arranged to produce an output control signal correlative to the sensed active gas concentration in the diluted active gas mixture, with the control signal being transmitted to the mass flow controller to modulate the set point thereof to achieve a predetermined constant active gas concentration for the desired application of the diluted active gas mixture.
  • the gas flow metering device can be of any suitable type, including for example a mass flow controller, a micro-valve element actuatable for dispensing very low flow rates of the active gas component from the active gas supply, a flowmeter coupled with a flow control valve in the dispensing line, or any other element or assembly that is effective to provide a selected flow rate of the active gas from the active gas source.
  • the active gas source can likewise be of any suitable type, e.g., a high-pressure or low-pressure gas storage and dispensing vessel or container holding the neat active gas to be diluted for use.
  • the neat active gas source comprises a sub-atmospheric pressure neat active gas storage and dispensing vessel of the type described in U.S. Pat. No. 5,518,528 to Glenn M. Tom et al. and commercially available from ATMI, Inc. (Danbury, Conn.) under the trademark SDS, wherein active gas is sorptively retained on a physical adsorbent and selectively desorbed therefrom for dispensing of active gas from the vessel.
  • the neat active gas source comprises a gas storage and dispensing vessel of the type described in U.S. Pat. No. 6,089,027 to Luping Wang, et al. and commercially available from ATMI, Inc. (Danbury, Conn.) under the trademark VAC, featuring an interiorly disposed regulator element for dispensing of the active gas at a pressure determined by the regulator set point.
  • the dynamic mixing device arranged to mix the neat active gas and the diluent gas for forming a diluted active gas mixture can be of any suitable type, whereby the neat active gas and the diluent gas are intermixed with one another for discharge at a desired dilute concentration of the active gas, e.g., for flow to the downstream dilute gas mixture-consuming process.
  • the dynamic mixing device can for example comprise a venturi, static mixer, pump, compressor, rotary mixer, ejector, eductor, opposed jet-equipped mixing chamber, or other device, structure or assembly that effects mixing of the neat active gas and the diluent gas to produce the diluted active gas mixture.
  • the monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively control the dispensing rate of the neat active gas, to achieve a predetermined concentration of active gas in the diluted active gas mixture can be of any suitable type, including spectrometric, chromatographic, calorimetric, surface acoustic wave (SAW), photonic and flame ionizer types.
  • Preferred monitor types include Fourier Transform-Infrared (FT-IR) and IR photometric monitors.
  • the monitor can be arranged in any suitable manner, e.g., disposed in-line in the diluted active gas mixture discharge line, or disposed to sample gas via a side-stream sampling arrangement, or in any other suitable fashion.
  • the monitor can include one or multiple monitoring devices or components, as desired in a given application of the invention.
  • the signals generated by each of the constituent monitoring devices or components that are indicative of the concentration of the active gas in the diluted active gas mixture can be processed to provide an average or corrected output signal correlative to the concentration of the active gas in the diluted active gas mixture.
  • Such signal processing can be carried out by a programmable general purpose computer that is programmed to process the respective output signals of the respective monitoring devices or components according to a suitable algorithm or computational procedure to provide a net output signal correlative of the concentration of the active gas in the diluted active gas mixture.
  • the signal processing can be carried out by a comparator or bridge circuit, microprocessor, central processing unit (CPU) or other processor, to provide appropriate output for modulating the gas flow metering device to achieve the desired active gas concentration in the diluted active gas mixture.
  • the monitor type includes an infrared thermopile detector system such as the type discussed in U.S. patent application Ser. No. 10/140,484, having a United States filing date of May 8, 2002, which is hereby incorporated herein by reference in its entirety.
  • a radiation source transmits infrared radiation through a sample of the gas stream
  • a thermopile detector receives the infrared radiation after transmission through the gas sample.
  • a signal correlative of concentration of at least one component in the gas sample, which is preferably the active gas component is output to a control means arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the system.
  • the active gas in the dilute gas supply system of the invention can be of any suitable type, depending on the specific diluted active gas mixture-using process for which the diluted active gas mixture is to be provided.
  • the gas can for example be a gas that is a source material for forming a dopant or trace reagent species, for manufacturing of semiconductor products.
  • the gas alternatively could be diluted for use as a calibration standard, as a sterilant for use below hazardous concentration levels, as a reactant for nano-concentration chemical reactions, for preparation of low concentration mutagenic agent samples, for research and testing purposes, etc.
  • the diluted active gas mixture-using process can be correspondingly varied, and can variously include industrial processes (e.g., chemical vapor deposition), medical diagnostics, research investigations, agricultural assays, treatment of the body with dilute radiological therapeutic agents, etc.
  • industrial processes e.g., chemical vapor deposition
  • medical diagnostics e.g., medical diagnostics, research investigations, agricultural assays, treatment of the body with dilute radiological therapeutic agents, etc.
  • the diluent gas can be of any suitable type, and can variously include single component diluent compositions, as well as multi-component diluent formulations.
  • Illustrative of potentially suitable diluent gases in specific applications of the invention are nitrogen, argon, helium, air, krypton, xenon, xenon halides, hydrogen, oxygen, ammonia, and gaseous organometallic compounds, etc.
  • FIG. 1 is a schematic representation of a dilute gas supply system 10 including a neat active gas source 12 , which may for example compromise a fluid storage and dispensing vessel such as a conventional high-pressure gas cylinder or alternatively a sub-atmospheric pressure gas dispensing system, e.g., of the type disclosed in U.S. Pat. No. 5,518,528 to Glenn M. Tom, et al and U.S. Pat. No. 6,089,027 to Luping Wang, et al, the disclosures of which hereby are incorporated herein by reference in their respective entireties.
  • a fluid storage and dispensing vessel such as a conventional high-pressure gas cylinder or alternatively a sub-atmospheric pressure gas dispensing system, e.g., of the type disclosed in U.S. Pat. No. 5,518,528 to Glenn M. Tom, et al and U.S. Pat. No. 6,089,027 to Luping Wang, et al, the disclosure
  • the neat active gas source 12 thus may comprise a vessel equipped with a valve head 50 , as shown, or alternatively coupled with an external regulator, restricted orifice flow control element(s) 13 , and other conventional flow circuitry elements.
  • the valve head 50 can contain a conventional flow control valve (head valve) controllable by a hand wheel actuator, as illustrated, or alternatively by an automatic valve controller, e.g., a pneumatic actuator, or electrical solenoid valve actuator, etc.
  • the neat active gas source 12 is coupled in closed gas flow communication with discharge line 14 having mass flow controller 16 disposed therein.
  • the discharge line 14 downstream of the mass flow controller 16 is coupled to venturi 18 , with the venturi providing suction for inducing flow of neat active gas from discharge line 14 into the throat of the venturi.
  • a dilute gas source 20 is provided in the system, and arranged to discharge diluting gas in line 22 , which may optionally include a mass flow controller, to venturi 18 for flow therethrough and discharge from the venturi in line 24 containing in-line gas analyzer 26 therein.
  • the in-line gas analyzer 26 is constructed and arranged to generate an output control signal indicative of the concentration of the active gas in the diluted gas stream flowing through the analyzer from fine 24 and dispensed from the analyzer 26 in line 28 for flow to downstream gas-using process unit 30 , e.g., an epitaxial growth facility or other semiconductor process tool or installation.
  • downstream gas-using process unit 30 e.g., an epitaxial growth facility or other semiconductor process tool or installation.
  • the electronic signal generated by in-line analyzer 26 is transmitted in signal transmission line 32 to mass flow controller 16 , which responsively adjusts flow rate of the neat active gas in discharge line 14 that is flowed to the venturi 18 for dilution to produce the product gas for downstream use.
  • neat (100% concentration) active gas is dispensed from neat gas source 12 into discharge line 14 containing mass flow controller 16 , which operates to control the delivery rate of the neat gas.
  • the resulting modulated flow rate neat gas in discharge line 14 is mixed with the diluting gas stream flowed from diluting gas source 20 through line 22 to venturi 18 .
  • a device such as an eductor or pump, with or without a static mizer, can alternatively be employed to mix the diluting gas with the active gas.
  • the venturi or other mixing device provides necessary pressure differential across the mass flow controller 16 to flow the active gas through the flow circuit of the overall supply system.
  • the resulting mixed dilute gas stream (including the active gas and diluting gas) is flowed in line 24 to the in-line gas analyzer 26 , where concentration of active gas in the gas mixture is determined and used to responsively generate the control signal transmitted in signal transmission line 32 to the mass transfer controller, with the mass flow controller responsively being modulated by the control signal to increase or decrease the active gas delivery rate to achieve the desired diluted active gas concentration in the diluted active gas mixture in line 28 flowed to the downstream process unit 30 .
  • the in-line gas monitor/analyzer 26 can operate by any suitable mode of operation, including for example, photometry, spectroscopy, electrochemistry, acoustic monitoring, thermal monitoring, etc., or a combination of two or more of such modes of operation, to determine concentration of active gas in the gas mixture as diluted for flow to the downstream gas-using process.
  • any suitable mode of operation including for example, photometry, spectroscopy, electrochemistry, acoustic monitoring, thermal monitoring, etc., or a combination of two or more of such modes of operation, to determine concentration of active gas in the gas mixture as diluted for flow to the downstream gas-using process.
  • the process system can alternatively or additionally utilize a bypass or side-stream loop including take-off line 36 interconnecting line 24 with monitor 38 and recycle line 40 joining monitor 38 with line 28 .
  • the monitor 38 generates an output control signal correlative of the concentration of the active gas in the bypass loop and such output control signal is transmitted by signal transmission line 44 to the central processing unit (CPU) 46 .
  • the central processing unit 46 processes the concentration signal from line 44 and transmits a correspondingly processed signal in signal transmission line 48 to the mass flow controller 16 .
  • the CPU 46 can also be arranged to concurrently receive concentration output signal in line 42 from the in-line monitor 26 , whereby the signals from both concentration-monitoring monitors 26 and 38 are processed in CPU 46 and used to generate a unitary control signal that is transmitted in signal transmission line 48 to the mass flow controller 16 .
  • the system is arranged to process two concentration-sensing signals from the corresponding monitors 26 and 38 , e.g., with the respective monitors operating by a same or different monitoring modality in relation to one another, to enhance the accuracy and reliability of the control signal sent to the mass flow controller 16 .
  • the active gas as mentioned can be of any suitable type, including for example, in the case of semiconductor process usage, gases such as hydrides (e.g., arsine, phosphine, germane, etc.), acid gases (e.g., SiHCl 3 , SiF 4 , SiH 2 Cl 2 ), boranes, etc.
  • Diluting gases for such semiconductor manufacturing applications can include, for example, homonuclear diatomic species (e.g., H 2 , N 2 , O 2 ) or atomic gases (e.g., argon, helium, and the like).
  • the dilute fluid supply system of the invention can be operated and arranged to supply a plurality of active species, e.g., a blend of complex dopants.
  • the active gas source is a sub-atmospheric gas source such as those of the aforementioned Tom, et al and Wang, et al patents.
  • the present invention by virtue of utilizing a real-time gas monitor provides a continuous measure of the gas mixture, thereby ensuring a constant diluted active gas concentration in the delivered dilute gas mixture, in contrast to the conventional methods described earlier herein in the Background of the Invention section hereof. If active gas concentration deviates from a set point value, a control signal is sent from the gas monitor to the active gas metering device to increase or decrease the active gas delivery rate to maintain the desired concentration value.
  • the active gas source was a sub-atmospheric pressure VAC® gas source vessel (commercially available from ATMI, Inc., Danbury, Conn.) equipped with an internal gas regulator for constant delivery pressure of carbon tetrafluoride at 500 torr.
  • the gas was dosed using a micro-valve connected to the gas source vessel and capable of delivering a sub-milliliter per minute flow rate, to produce the low concentration mixtures desired.
  • the fluid dispensing operation was controlled by adjusting the rate of valve opening and closing a valve using a fast-speed solenoid.
  • a pressure differential between the inlet and outlet of the valve was required.
  • This pressure differential was provided by a small venturi pump driven with a 60-psi supply of nitrogen gas, with the nitrogen gas being the diluent gas for the diluted product gas mixture.
  • the turbulence created in the high-to-low pressure interface of the venturi pump provided the necessary mixing of the neat gas and the diluent gas.
  • FIG. 2 illustrates the vacuum pressure levels that were achieved using the venturi pump, with the vacuum pressure being shown as a function of diluent nitrogen flow rate.
  • a flow of nitrogen gas at 4 standard liters per minute (slpm) at 60 psi (equivalent to 7.8 slpm at 14.7 psi) produced a vacuum of 250 torr.
  • the pressure differential between the inlet of the micro-valve (at 500 torr) and the outlet of the micro-valve (at 250 torr) was adequate to produce the desired gas flow.
  • the resulting carbon tetrafluoride/nitrogen gas mixture was introduced to two in-line gas analyzers.
  • the first analyzer was a commercially available Fourier Transform-Infrared (FT-IR) spectrometer.
  • the second gas analyzer was an infrared photometer including a broad band infrared (IR) light source and a dual channel filtered thermopile detector.
  • one filter element was employed to block all IR energy except for the region where the active species (carbon tetrafluoride) absorbed light.
  • the second filter element in the photometer filtered out all IR energy with the exception of a narrow band at a region where no common materials absorbed light, thereby enabling the second filter element to be employed for reference signal purposes.
  • This photometer system is of a simple character, involving no moving parts, and provided an analog signal proportional to the concentration of the active gas (CF 4 ).
  • FIG. 3 shows the time-dependent signals from the IR photometer and FT-IR analyzer with changing CF 4 delivery rates. While the FT-IR signal was of a delayed nature due to computational duration associated with the FT-IR device, the IR photometer provided accurate and fast response to changing conditions.
  • FIG. 3 also illustrates the utility of the micro-valve for controlling the delivery rate of small flows of the active gas.
  • a concentration of 100 parts per million by volume (ppmv) of CF 4 per standard liter per minute (slpm) of N 2 corresponded to delivery of 0.7 standard cubic centimeters per minute (sccm) of CF 4 .
  • Smaller flow rates are achievable by reducing the pressure inside the valve, or by introducing a flow restriction between the outlet of the valve and the inlet of the venturi.
  • FIG. 4 shows a calibration curve of the IR photometer, generated by comparing the FT-IR calibrated signal to the reference signal from the IR photometer.
  • the foregoing example illustrates the utility of the invention in delivering small flow rates of an active gas, as mixed, measured and dynamically controlled using a simple feedback loop between an analyzer and a gas flow metering component.

Abstract

Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This is a continuation of U.S. patent application Ser. No. 10/402,759 filed Mar. 28, 2003 in the names of Jose I. Arno, et al. for “In-Situ Gas Blending and Dilution System for Delivery of Dilute Gas at a Predetermined Concentration,” the entirety of which is incorporated herein by reference for all purposes. Priority of said U.S. patent application Ser. No. 10/402,759 is claimed under the provisions of 35 USC 120.
  • FIELD OF THE INVENTION
  • The present invention relates to apparatus and method for supplying dilute gases at predetermined concentrations, e.g., as source gas for ion implantation doping of semiconductor materials.
  • DESCRIPTION OF THE RELATED ART
  • The semiconductor industry uses a wide variety of dilute gases in applications where the source material is highly toxic or hazardous and the dosage of active gas species is small.
  • For instance, chemical vapor deposition doping of epitaxial films requires source gases such as arsine, phosphine, and germane in highly dilute states. As an example, arsenic may be introduced in a semiconductor film for doping thereof, from a dilute arsine/hydrogen gas mixture. In such arsenic doping application, a source gas of low arsine content e.g., 50 parts per million (ppm) may be further diluted with hydrogen to achieve a desired hydrogen/arsine gas mixture. The flows of the dilute arsine starting material and the diluent hydrogen that is added thereto to form the final dilute arsine gas mixture can be controlled by mass flow controllers, to deliver a metered amount of the final diluted arsine to the vapor deposition tool.
  • Generally, two primary approaches are utilized in the semiconductor industry for supplying an active gas (such term being used hereinafter to designate the gas component of interest, such as the dopant gas species) in diluted form in a gas mixture useful for a desired application.
  • A first category of dilute gas supply techniques utilizes pre-mixed high-pressure gas mixtures (containing the low-concentration active gas component) as the source gas medium, as dispensed for use from high-pressure gas supply vessels such as pressurized gas cylinders. This gas supply approach has the following deficiencies:
      • (1) the gas supply vessels are exhausted at a high rate, requiring numerous change-outs of the gas supply vessels during the operation of the active gas-consuming process;
      • (2) when gas supply vessels are changed out as they are exhausted, the active gas-consuming process may need to be re-qualified, since the concentration of active gas supplied from a freshly installed gas supply vessel may be different from the concentration dispensed from a previously installed gas supply vessel;
      • (3) in addition to deficiency (2), the gas concentration of the active gas dispensed from any given gas supply vessel is fixed by the gas supply vessel manufacturer, and there is no capability of delivering varying concentrations depending on time-varying conditions in the downstream active gas-consuming process;
      • (4) the concentration of the active gas in the gas mixture stored in the gas supply vessel can change with time due to decomposition of the active gas component, or the concentration of the active gas can vary with successive change-outs of gas supply vessels, in an unknown and unexpected manner; and
      • (5) the gas supply vessel typically is at high atmospheric pressure to maximize inventory of the active gas in the vessel, entailing a potentially unsafe situation if the gas supply vessel ruptures or leakage from the associated head assembly, valves, etc. of the vessel occurs.
  • The second general category of dilute gas supply techniques involves in-situ generation of gas, using solids or liquid raw materials to generate the desired gas species through chemical reaction. In-situ gas generation has the following associated deficiencies:
      • (1) the time required to initiate gas generation and achieve steady-state gas production is generally substantial and does not permit a quick-response turn-on of gas dispensing to be achieved;
      • (2) the raw materials used as reactants for in-situ gas generation are frequently highly toxic in character, thereby raising safety and operational issues;
      • (3) in-situ gas generators are typically relatively complex systems, including for example, gas generation chambers, reactant supplies, reactant flow circuitry (since even in the case of solid reactant sources, there is typically a fluid co-reactant), dispensing lines, and associated in-line filters, purifiers, interlocks, etc.;
      • (4) in-situ gas generators as conventionally employed involve consumable parts requiring periodic replacement, e.g., filters and purifiers; and
      • (5) in-situ gas generation systems are relatively expensive, both in capital expenditure and in overall cost of ownership.
  • Accordingly, the semiconductor industry has continuing need for improved gas supply sources for delivery of dilute gases to process equipment.
  • SUMMARY OF THE INVENTION
  • The present invention relates to apparatus and method for delivery of dilute active gas, e.g., to a downstream active gas-consuming process unit of a semiconductor manufacturing plant.
  • In one aspect, the present invention relates to an system for delivery of dilute gases, comprising:
  • an active gas source;
  • a diluent gas source;
  • a gas flow metering device for dispensing of the active gas at a predetermined flow rate;
  • a mixing device arranged to mix active gas from the neat active gas source that is dispensed at said predetermined flow rate by the gas flow metering device, with diluent gas to form a diluted active gas mixture; and
  • a monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively adjust the gas flow metering device, to control the dispensing rate of the active gas, and maintain a predetermined concentration of active gas in the diluted active gas mixture.
  • In another aspect, the invention relates to a system for delivery of dilute fluid, comprising:
  • an active fluid source;
  • a diluent fluid source;
  • a fluid flow metering device for dispensing of the neat active gas at a predetermined flow rate;
  • a mixing device arranged to mix active fluid from the active fluid source that is dispensed at said predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture; and
  • a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.
  • Yet another aspect of the invention relates to a method for delivery of dilute gas, comprising:
  • providing an active gas source and a diluent gas source;
  • controllably dispensing active gas from the active gas source at a predetermined flow rate;
  • mixing active gas from the active gas source that is dispensed at said predetermined flow rate, with diluent gas from the diluent gas source, to form a diluted active gas mixture; and
  • monitoring concentration of active gas in the diluted active gas mixture, and responsively adjusting the dispensing rate of the neat active gas, to maintain a predetermined concentration of active gas in the diluted active gas mixture.
  • A still further aspect of the invention relates to a method for delivery of dilute fluid, comprising:
  • providing an active fluid source and a diluent fluid source;
  • controllably dispensing active fluid from the active fluid source at a predetermined flow rate;
  • mixing active fluid from the active fluid source that is dispensed at said predetermined flow rate, with diluent fluid from the diluent fluid source, to form a diluted active fluid mixture; and
  • monitoring concentration of active fluid in the diluted active fluid mixture, and responsively adjusting the dispensing rate of the active fluid, to maintain a predetermined concentration of active fluid in the diluted active fluid mixture.
  • Other aspects, features and embodiments will be more fully apparent from the ensuing disclosure and appended claims.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic representation of a dilute gas supply system according to one embodiment of the present invention.
  • FIG. 2 is a graph of vacuum pressure, in torr as a function of flow rate in liters per minute, illustrating the vacuum levels achieved using a mini-venturi in the practice of the present invention.
  • FIG. 3 is a graph showing FT-IR signal of carbon tetrafluoride concentration in parts per million as a function of time, in hours: minutes: seconds, and corresponding IR photometer signal (reference/active) as a function of time.
  • FIG. 4. is a calibration curve plotted as carbon tetrafluoride concentration, in parts per million, as a function of FT-IR response (reference/active) and showing the corresponding calibration algorithm.
  • DETAILED DESCRIPTION OF THE INVENTION AND PREFERRED EMBODIMENTS THEREOF
  • The disclosures of copending U.S. patent application Ser. No. 10/402,759 filed Mar. 28, 2003 is hereby incorporated herein by reference in its respective entirety, for all purposes.
  • The present invention is based on the discovery of a highly efficient and cost-effective system for delivery of dilute gases, utilizing a neat active gas source, a diluent gas source, a gas flow metering device for dispensing of the neat active gas, a dynamic mixing device arranged to mix the neat active gas and the diluent gas for forming a diluted active gas mixture, and a monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively control the dispensing rate of the neat active gas, to achieve a predetermined concentration of active gas in the diluted active gas mixture.
  • In a specific embodiment, as hereinafter described in greater detail, the gas flow metering device comprises a mass flow controller in a gas flow line interconnecting the neat active gas source and the dynamic mixing device, and the monitor comprises an in-line gas analyzer arranged to produce an output control signal correlative to the sensed active gas concentration in the diluted active gas mixture, with the control signal being transmitted to the mass flow controller to modulate the set point thereof to achieve a predetermined constant active gas concentration for the desired application of the diluted active gas mixture.
  • The gas flow metering device can be of any suitable type, including for example a mass flow controller, a micro-valve element actuatable for dispensing very low flow rates of the active gas component from the active gas supply, a flowmeter coupled with a flow control valve in the dispensing line, or any other element or assembly that is effective to provide a selected flow rate of the active gas from the active gas source.
  • The active gas source can likewise be of any suitable type, e.g., a high-pressure or low-pressure gas storage and dispensing vessel or container holding the neat active gas to be diluted for use. In one embodiment, the neat active gas source comprises a sub-atmospheric pressure neat active gas storage and dispensing vessel of the type described in U.S. Pat. No. 5,518,528 to Glenn M. Tom et al. and commercially available from ATMI, Inc. (Danbury, Conn.) under the trademark SDS, wherein active gas is sorptively retained on a physical adsorbent and selectively desorbed therefrom for dispensing of active gas from the vessel. In another embodiment, the neat active gas source comprises a gas storage and dispensing vessel of the type described in U.S. Pat. No. 6,089,027 to Luping Wang, et al. and commercially available from ATMI, Inc. (Danbury, Conn.) under the trademark VAC, featuring an interiorly disposed regulator element for dispensing of the active gas at a pressure determined by the regulator set point.
  • The dynamic mixing device arranged to mix the neat active gas and the diluent gas for forming a diluted active gas mixture can be of any suitable type, whereby the neat active gas and the diluent gas are intermixed with one another for discharge at a desired dilute concentration of the active gas, e.g., for flow to the downstream dilute gas mixture-consuming process. The dynamic mixing device can for example comprise a venturi, static mixer, pump, compressor, rotary mixer, ejector, eductor, opposed jet-equipped mixing chamber, or other device, structure or assembly that effects mixing of the neat active gas and the diluent gas to produce the diluted active gas mixture.
  • The monitor arranged to measure concentration of active gas in the diluted active gas mixture, and responsively control the dispensing rate of the neat active gas, to achieve a predetermined concentration of active gas in the diluted active gas mixture, can be of any suitable type, including spectrometric, chromatographic, calorimetric, surface acoustic wave (SAW), photonic and flame ionizer types. Preferred monitor types include Fourier Transform-Infrared (FT-IR) and IR photometric monitors. The monitor can be arranged in any suitable manner, e.g., disposed in-line in the diluted active gas mixture discharge line, or disposed to sample gas via a side-stream sampling arrangement, or in any other suitable fashion.
  • The monitor can include one or multiple monitoring devices or components, as desired in a given application of the invention. In instances where multiple monitor devices are employed, to provide monitoring via different sensing modalities, the signals generated by each of the constituent monitoring devices or components that are indicative of the concentration of the active gas in the diluted active gas mixture can be processed to provide an average or corrected output signal correlative to the concentration of the active gas in the diluted active gas mixture.
  • Such signal processing can be carried out by a programmable general purpose computer that is programmed to process the respective output signals of the respective monitoring devices or components according to a suitable algorithm or computational procedure to provide a net output signal correlative of the concentration of the active gas in the diluted active gas mixture. Alternatively, the signal processing can be carried out by a comparator or bridge circuit, microprocessor, central processing unit (CPU) or other processor, to provide appropriate output for modulating the gas flow metering device to achieve the desired active gas concentration in the diluted active gas mixture.
  • In a preferred embodiment, the monitor type includes an infrared thermopile detector system such as the type discussed in U.S. patent application Ser. No. 10/140,484, having a United States filing date of May 8, 2002, which is hereby incorporated herein by reference in its entirety. In such a system a radiation source transmits infrared radiation through a sample of the gas stream, and a thermopile detector receives the infrared radiation after transmission through the gas sample. A signal correlative of concentration of at least one component in the gas sample, which is preferably the active gas component, is output to a control means arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the system.
  • The active gas in the dilute gas supply system of the invention can be of any suitable type, depending on the specific diluted active gas mixture-using process for which the diluted active gas mixture is to be provided. The gas can for example be a gas that is a source material for forming a dopant or trace reagent species, for manufacturing of semiconductor products. The gas alternatively could be diluted for use as a calibration standard, as a sterilant for use below hazardous concentration levels, as a reactant for nano-concentration chemical reactions, for preparation of low concentration mutagenic agent samples, for research and testing purposes, etc.
  • The diluted active gas mixture-using process can be correspondingly varied, and can variously include industrial processes (e.g., chemical vapor deposition), medical diagnostics, research investigations, agricultural assays, treatment of the body with dilute radiological therapeutic agents, etc.
  • The diluent gas can be of any suitable type, and can variously include single component diluent compositions, as well as multi-component diluent formulations. Illustrative of potentially suitable diluent gases in specific applications of the invention are nitrogen, argon, helium, air, krypton, xenon, xenon halides, hydrogen, oxygen, ammonia, and gaseous organometallic compounds, etc.
  • Referring now to the drawings, FIG. 1 is a schematic representation of a dilute gas supply system 10 including a neat active gas source 12, which may for example compromise a fluid storage and dispensing vessel such as a conventional high-pressure gas cylinder or alternatively a sub-atmospheric pressure gas dispensing system, e.g., of the type disclosed in U.S. Pat. No. 5,518,528 to Glenn M. Tom, et al and U.S. Pat. No. 6,089,027 to Luping Wang, et al, the disclosures of which hereby are incorporated herein by reference in their respective entireties.
  • The neat active gas source 12 thus may comprise a vessel equipped with a valve head 50, as shown, or alternatively coupled with an external regulator, restricted orifice flow control element(s) 13, and other conventional flow circuitry elements. The valve head 50 can contain a conventional flow control valve (head valve) controllable by a hand wheel actuator, as illustrated, or alternatively by an automatic valve controller, e.g., a pneumatic actuator, or electrical solenoid valve actuator, etc.
  • The neat active gas source 12 is coupled in closed gas flow communication with discharge line 14 having mass flow controller 16 disposed therein. The discharge line 14 downstream of the mass flow controller 16 is coupled to venturi 18, with the venturi providing suction for inducing flow of neat active gas from discharge line 14 into the throat of the venturi.
  • A dilute gas source 20 is provided in the system, and arranged to discharge diluting gas in line 22, which may optionally include a mass flow controller, to venturi 18 for flow therethrough and discharge from the venturi in line 24 containing in-line gas analyzer 26 therein.
  • The in-line gas analyzer 26 is constructed and arranged to generate an output control signal indicative of the concentration of the active gas in the diluted gas stream flowing through the analyzer from fine 24 and dispensed from the analyzer 26 in line 28 for flow to downstream gas-using process unit 30, e.g., an epitaxial growth facility or other semiconductor process tool or installation.
  • The electronic signal generated by in-line analyzer 26 is transmitted in signal transmission line 32 to mass flow controller 16, which responsively adjusts flow rate of the neat active gas in discharge line 14 that is flowed to the venturi 18 for dilution to produce the product gas for downstream use.
  • In operation, neat (100% concentration) active gas is dispensed from neat gas source 12 into discharge line 14 containing mass flow controller 16, which operates to control the delivery rate of the neat gas. The resulting modulated flow rate neat gas in discharge line 14 is mixed with the diluting gas stream flowed from diluting gas source 20 through line 22 to venturi 18. In lieu of a venturi device, a device such as an eductor or pump, with or without a static mizer, can alternatively be employed to mix the diluting gas with the active gas. The venturi or other mixing device provides necessary pressure differential across the mass flow controller 16 to flow the active gas through the flow circuit of the overall supply system. The resulting mixed dilute gas stream (including the active gas and diluting gas) is flowed in line 24 to the in-line gas analyzer 26, where concentration of active gas in the gas mixture is determined and used to responsively generate the control signal transmitted in signal transmission line 32 to the mass transfer controller, with the mass flow controller responsively being modulated by the control signal to increase or decrease the active gas delivery rate to achieve the desired diluted active gas concentration in the diluted active gas mixture in line 28 flowed to the downstream process unit 30.
  • The in-line gas monitor/analyzer 26 can operate by any suitable mode of operation, including for example, photometry, spectroscopy, electrochemistry, acoustic monitoring, thermal monitoring, etc., or a combination of two or more of such modes of operation, to determine concentration of active gas in the gas mixture as diluted for flow to the downstream gas-using process.
  • In a variation of the process just described, in which the dilute gas mixture monitor comprises in-line monitor 26, the process system can alternatively or additionally utilize a bypass or side-stream loop including take-off line 36 interconnecting line 24 with monitor 38 and recycle line 40 joining monitor 38 with line 28. The monitor 38 generates an output control signal correlative of the concentration of the active gas in the bypass loop and such output control signal is transmitted by signal transmission line 44 to the central processing unit (CPU) 46. The central processing unit 46 in turn processes the concentration signal from line 44 and transmits a correspondingly processed signal in signal transmission line 48 to the mass flow controller 16.
  • As a still further variation of the system described above, the CPU 46 can also be arranged to concurrently receive concentration output signal in line 42 from the in-line monitor 26, whereby the signals from both concentration-monitoring monitors 26 and 38 are processed in CPU 46 and used to generate a unitary control signal that is transmitted in signal transmission line 48 to the mass flow controller 16. By such arrangement, the system is arranged to process two concentration-sensing signals from the corresponding monitors 26 and 38, e.g., with the respective monitors operating by a same or different monitoring modality in relation to one another, to enhance the accuracy and reliability of the control signal sent to the mass flow controller 16.
  • The active gas as mentioned can be of any suitable type, including for example, in the case of semiconductor process usage, gases such as hydrides (e.g., arsine, phosphine, germane, etc.), acid gases (e.g., SiHCl3, SiF4, SiH2Cl2), boranes, etc. Diluting gases for such semiconductor manufacturing applications can include, for example, homonuclear diatomic species (e.g., H2, N2, O2) or atomic gases (e.g., argon, helium, and the like).
  • It will be recognized that while the invention is illustratively shown with reference to delivery of dilute gas species, the invention is also amenable to delivery of blends of materials in the liquid phase including an active liquid of a desired concentration.
  • It will also be recognized that the dilute fluid supply system of the invention can be operated and arranged to supply a plurality of active species, e.g., a blend of complex dopants.
  • The safety advantages of utilizing the system of the present invention are enhanced when the active gas source is a sub-atmospheric gas source such as those of the aforementioned Tom, et al and Wang, et al patents.
  • Thus, the present invention, by virtue of utilizing a real-time gas monitor provides a continuous measure of the gas mixture, thereby ensuring a constant diluted active gas concentration in the delivered dilute gas mixture, in contrast to the conventional methods described earlier herein in the Background of the Invention section hereof. If active gas concentration deviates from a set point value, a control signal is sent from the gas monitor to the active gas metering device to increase or decrease the active gas delivery rate to maintain the desired concentration value.
  • The features and advantages of the invention are more fully shown by the following non-limiting example.
  • EXAMPLE 1
  • Utilizing a system of the type shown in FIG. 1, the operation of the invention was demonstrated with carbon tetrafluoride (CF4) as the active gas. The active gas source was a sub-atmospheric pressure VAC® gas source vessel (commercially available from ATMI, Inc., Danbury, Conn.) equipped with an internal gas regulator for constant delivery pressure of carbon tetrafluoride at 500 torr.
  • The gas was dosed using a micro-valve connected to the gas source vessel and capable of delivering a sub-milliliter per minute flow rate, to produce the low concentration mixtures desired. The fluid dispensing operation was controlled by adjusting the rate of valve opening and closing a valve using a fast-speed solenoid.
  • In order for the micro-valve to deliver gas, a pressure differential between the inlet and outlet of the valve was required. This pressure differential was provided by a small venturi pump driven with a 60-psi supply of nitrogen gas, with the nitrogen gas being the diluent gas for the diluted product gas mixture. The turbulence created in the high-to-low pressure interface of the venturi pump provided the necessary mixing of the neat gas and the diluent gas.
  • FIG. 2 illustrates the vacuum pressure levels that were achieved using the venturi pump, with the vacuum pressure being shown as a function of diluent nitrogen flow rate. As an illustrative example, a flow of nitrogen gas at 4 standard liters per minute (slpm) at 60 psi (equivalent to 7.8 slpm at 14.7 psi) produced a vacuum of 250 torr. The pressure differential between the inlet of the micro-valve (at 500 torr) and the outlet of the micro-valve (at 250 torr) was adequate to produce the desired gas flow.
  • The resulting carbon tetrafluoride/nitrogen gas mixture was introduced to two in-line gas analyzers. The first analyzer was a commercially available Fourier Transform-Infrared (FT-IR) spectrometer. The second gas analyzer was an infrared photometer including a broad band infrared (IR) light source and a dual channel filtered thermopile detector.
  • In the photometer, one filter element was employed to block all IR energy except for the region where the active species (carbon tetrafluoride) absorbed light. The second filter element in the photometer filtered out all IR energy with the exception of a narrow band at a region where no common materials absorbed light, thereby enabling the second filter element to be employed for reference signal purposes. This photometer system is of a simple character, involving no moving parts, and provided an analog signal proportional to the concentration of the active gas (CF4).
  • FIG. 3 shows the time-dependent signals from the IR photometer and FT-IR analyzer with changing CF4 delivery rates. While the FT-IR signal was of a delayed nature due to computational duration associated with the FT-IR device, the IR photometer provided accurate and fast response to changing conditions.
  • FIG. 3 also illustrates the utility of the micro-valve for controlling the delivery rate of small flows of the active gas. For example, a concentration of 100 parts per million by volume (ppmv) of CF4 per standard liter per minute (slpm) of N2 corresponded to delivery of 0.7 standard cubic centimeters per minute (sccm) of CF4. Smaller flow rates are achievable by reducing the pressure inside the valve, or by introducing a flow restriction between the outlet of the valve and the inlet of the venturi.
  • FIG. 4 shows a calibration curve of the IR photometer, generated by comparing the FT-IR calibrated signal to the reference signal from the IR photometer.
  • The foregoing example illustrates the utility of the invention in delivering small flow rates of an active gas, as mixed, measured and dynamically controlled using a simple feedback loop between an analyzer and a gas flow metering component.
  • While the invention has been described herein with reference to specific aspects, features and embodiments, it will be recognized that the invention is not thus limited, but is susceptible to implementation in numerous other variations, modifications, and alternative embodiments.
  • Accordingly, the invention is intended to be broadly construed as encompassing such variations, modifications and alternative embodiments, within the spirit and scope of the invention as hereinafter claimed.

Claims (25)

1. A system for delivery of dilute gases, comprising:
an active gas source for providing at least one active gas selected from the group consisting of hydride, acid gas, and borane;
a diluent gas source;
a gas flow metering device for dispensing of the active gas;
a mixing device arranged to mix active gas from the active gas source that is dispensed by the gas flow metering device, with diluent gas to form a diluted active gas mixture; and
a monitor arranged to continuously measure concentration of active gas in the diluted active gas mixture, and responsively adjust the gas flow metering device, to control the dispensing rate of the active gas, and maintain a predetermined concentration of active gas in the diluted active gas mixture,
wherein at least one of the active gas and the diluent gas is flowed to said mixing device without passage through a mass flow controller.
2. The system of claim 1, wherein the gas flow metering device comprises a mass flow controller.
3. The system of claim 2, further comprising a gas flow line interconnecting the active gas source and the mixing device, and wherein the mass flow controller is disposed in the gas flow line.
4. The system of claim 1, wherein the monitor comprises an in-line gas analyzer.
5. The system of claim 1, wherein the monitor comprises a gas analyzer in a bypass gas flow loop.
6. The system of claim 1, wherein the gas flow metering device comprises a micro-valve.
7. The system of claim 1, wherein the mixing device comprises a venturi and the gas flow metering device comprises a valve and a restricted flow orifice between the valve and the venturi.
8. The system of claim 1, wherein the active gas source comprises a gas storage and dispensing vessel holding the active gas.
9. The system of claim 8, wherein the gas storage and dispensing vessel contains a sorbent medium sorptively retaining active gas, and from which active gas is desorbed for dispensing of active gas from the vessel.
10. The system of claim 9, wherein said sorbent medium is a solid.
11. The system of claim 8, wherein the gas storage and dispensing vessel contains an interiorly disposed regulator for dispensing of active gas from the vessel at a pressure determined by set point of the regulator.
12. The system of claim 1, wherein the mixing device comprises a device selected from the group consisting of venturis, static mixers, pumps, compressors, rotary mixers, ejectors, eductors, and opposed jet-equipped mixing chambers.
13. The system of claim 1, wherein the mixing device comprises a venturi.
14. The system of claim 1, wherein the monitor comprises a gas monitoring device selected from the group consisting of spectrometric, chromatographic, colorimetric, surface acoustic wave (SAW), photonic and flame ionizer gas monitors.
15. The system of claim 1, wherein the monitor comprises a Fourier Transform-Infrared (FT-IR) gas analyzer.
16. The system of claim 1, wherein the monitor comprises an IR photometer.
17. The system of claim 1, wherein the monitor comprises a Fourier Transform-Infrared (FT-IR) gas analyzer and an IR photometer.
18. The system of claim 1, wherein the monitor comprises multiple gas monitoring devices.
19. The system of claim 18, wherein said multiple monitoring devices comprise gas monitoring devices having a differing gas concentration sensing modality.
20. The system of claim 1, further comprising a dilute active gas mixture discharge line connected with a dilute active gas mixture-using facility.
21. The system of claim 20, wherein the dilute active gas mixture-using facility comprises a semiconductor manufacturing plant.
22. The system of claim 21, wherein the semiconductor manufacturing plant comprises an ion implantation unit, a chemical vapor deposition process unit or combinations thereof.
23. The system of claim 1, wherein the diluent gas is selected from the group consisting of nitrogen, argon, helium, air, krypton, xenon, xenon halides, hydrogen, oxygen, ammonia, gaseous organometallic compounds and mixtures of two or more of the foregoing.
24. The system of claim 1, wherein the active gas is selected from the group consisting of arsine, phosphine, germane, SiHCl3, SiF4, SiH2Cl2, and mixtures of two or more of the foregoing.
25. The system of claim 1, wherein the active gas comprises a hydride selected from the group consisting of arsine, phosphine and germane.
US11/453,700 2003-03-28 2006-06-15 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration Expired - Lifetime US7325560B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/453,700 US7325560B2 (en) 2003-03-28 2006-06-15 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/402,759 US7063097B2 (en) 2003-03-28 2003-03-28 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US11/453,700 US7325560B2 (en) 2003-03-28 2006-06-15 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/402,759 Continuation US7063097B2 (en) 2003-03-28 2003-03-28 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration

Publications (2)

Publication Number Publication Date
US20060237061A1 true US20060237061A1 (en) 2006-10-26
US7325560B2 US7325560B2 (en) 2008-02-05

Family

ID=33130450

Family Applications (6)

Application Number Title Priority Date Filing Date
US10/402,759 Expired - Fee Related US7063097B2 (en) 2003-03-28 2003-03-28 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US10/641,576 Expired - Lifetime US6909973B2 (en) 2003-03-28 2003-08-14 Photometrically modulated delivery of reagents
US11/453,700 Expired - Lifetime US7325560B2 (en) 2003-03-28 2006-06-15 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US12/120,101 Expired - Fee Related US7711496B2 (en) 2003-03-28 2008-05-13 Photometrically modulated delivery of reagents
US12/773,666 Expired - Lifetime US7925450B2 (en) 2003-03-28 2010-05-04 Photometrically modulated delivery of reagents
US13/085,476 Expired - Lifetime US8244482B2 (en) 2003-03-28 2011-04-12 Photometrically modulated delivery of reagents

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US10/402,759 Expired - Fee Related US7063097B2 (en) 2003-03-28 2003-03-28 In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US10/641,576 Expired - Lifetime US6909973B2 (en) 2003-03-28 2003-08-14 Photometrically modulated delivery of reagents

Family Applications After (3)

Application Number Title Priority Date Filing Date
US12/120,101 Expired - Fee Related US7711496B2 (en) 2003-03-28 2008-05-13 Photometrically modulated delivery of reagents
US12/773,666 Expired - Lifetime US7925450B2 (en) 2003-03-28 2010-05-04 Photometrically modulated delivery of reagents
US13/085,476 Expired - Lifetime US8244482B2 (en) 2003-03-28 2011-04-12 Photometrically modulated delivery of reagents

Country Status (6)

Country Link
US (6) US7063097B2 (en)
EP (1) EP1627265A4 (en)
JP (1) JP2006521707A (en)
KR (1) KR101016856B1 (en)
CN (1) CN1768312A (en)
WO (1) WO2004088718A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US20060217896A1 (en) * 2003-03-28 2006-09-28 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US20080213925A1 (en) * 2003-03-28 2008-09-04 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050048195A1 (en) * 2003-08-26 2005-03-03 Akihiro Yanagita Dispensing system and method of controlling the same
US7328629B2 (en) * 2004-04-22 2008-02-12 Gas Technology Institute Method and apparatus for maintaining multi-component sample gas constituents in vapor phase during sample extraction and cooling
JP3945519B2 (en) * 2004-06-21 2007-07-18 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method and storage medium for object to be processed
KR100634376B1 (en) * 2004-07-07 2006-10-16 삼성전자주식회사 Apparatus drying substrates
US7955797B2 (en) * 2004-10-25 2011-06-07 Advanced Technology Materials, Inc. Fluid storage and dispensing system including dynamic fluid monitoring of fluid storage and dispensing vessel
JP4494942B2 (en) * 2004-11-19 2010-06-30 積水化学工業株式会社 Plasma processing equipment
TWI552797B (en) * 2005-06-22 2016-10-11 恩特葛瑞斯股份有限公司 Apparatus and process for integrated gas blending
TW200722344A (en) * 2005-08-22 2007-06-16 Advanced Tech Materials Material containment system
JP4798774B2 (en) * 2006-03-14 2011-10-19 株式会社山武 Mixed gas supply system
FR2901894B1 (en) * 2006-05-31 2008-12-26 Total France Sa METHOD AND DEVICE FOR CONTROLLING THE PREPARATION OF A MIXTURE OF CONSTITUENTS, IN PARTICULAR A MIXTURE WITH DEADLY VOLUMES OF PRE-MIXING
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US20080201053A1 (en) * 2007-02-20 2008-08-21 Esco Technologies (Asia) Pte Ltd System and method for mixed gas chamber with automatic recovery
US7670964B2 (en) * 2007-03-22 2010-03-02 Tokyo Electron Limited Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
US9383138B2 (en) * 2007-03-30 2016-07-05 Tokyo Electron Limited Methods and heat treatment apparatus for uniformly heating a substrate during a bake process
US20080241400A1 (en) * 2007-03-31 2008-10-02 Tokyo Electron Limited Vacuum assist method and system for reducing intermixing of lithography layers
US7772110B2 (en) * 2007-09-28 2010-08-10 Tokyo Electron Limited Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing
KR101130277B1 (en) * 2010-07-23 2012-03-26 (주) 텔트론 Mixing device of solution
PL2458348T3 (en) 2010-11-29 2014-01-31 Air Prod & Chem Method of, and apparatus for, measuring the mass flow rate of a gas
ES2749877T3 (en) 2010-11-29 2020-03-24 Air Prod & Chem Method and apparatus for measuring the molecular weight of a gas
US20120227816A1 (en) * 2011-03-10 2012-09-13 Xuemei Song Dynamic gas blending
DE102011013698A1 (en) * 2011-03-11 2012-09-13 Testo Ag Hand-held sampling head, analytical assembly and method for characterizing an aerosol
EP2667159B1 (en) 2012-05-24 2021-12-01 Air Products And Chemicals, Inc. Method of, and Apparatus for, Measuring the Mass Flow Rate of a Gas
ES2845173T3 (en) 2012-05-24 2021-07-26 Air Prod & Chem Procedure and apparatus for regulating the mass flow rate of a gas
EP2667277B1 (en) * 2012-05-24 2017-12-27 Air Products And Chemicals, Inc. Method of, and apparatus for, providing a gas mixture
PL2667162T3 (en) 2012-05-24 2016-03-31 Air Prod & Chem Method of, and apparatus for, measuring the physical properties of two-phase fluids
PL2667176T3 (en) 2012-05-24 2015-07-31 Air Prod & Chem Apparatus for measuring the true contents of a cylinder of gas under pressure
EP2667276B1 (en) * 2012-05-24 2017-11-08 Air Products And Chemicals, Inc. Method of, and apparatus for, providing a gas mixture
JP5998826B2 (en) * 2012-10-11 2016-09-28 東横化学株式会社 Mixed gas supply device
CN104871286B (en) * 2012-12-21 2018-06-26 普莱克斯技术有限公司 Storage and negative pressure transportation for the dopant combinations object of carbon ion implantation
CN103760929B (en) * 2013-12-31 2017-08-22 北京七星华创电子股份有限公司 A kind of silicon chip bearing area Control for Oxygen Content method of semiconductor equipment
KR20160119088A (en) 2014-02-06 2016-10-12 프랙스에어 테크놀로지, 인코포레이티드 Improved dynamics gas blending system and process for producing mixtures with minimal variation within tolerance limits and increased gas utilization
CN110085499B (en) * 2014-09-01 2022-03-04 恩特格里斯公司 Phosphorous or arsenic ion implantation using enhanced source technology
US9612221B2 (en) * 2014-10-14 2017-04-04 Chem-Aqua, Inc. + Pyxis Lab, Inc. Opto-electrochemical sensing system for monitoring and controlling industrial fluids
US10007275B2 (en) 2014-12-29 2018-06-26 Diversey, Inc. Dilution adjustment system and method
US10145269B2 (en) 2015-03-04 2018-12-04 General Electric Company System and method for cooling discharge flow
DE102016000518A1 (en) * 2016-01-19 2017-07-20 Linde Aktiengesellschaft Gas dilution system
JPWO2018052074A1 (en) * 2016-09-15 2019-06-27 株式会社堀場エステック Absorbance meter and semiconductor manufacturing apparatus using the same
US10214702B2 (en) * 2016-12-02 2019-02-26 Mustang Sampling Llc Biogas blending and verification systems and methods
CN109423622B (en) * 2017-08-29 2020-10-13 胜高股份有限公司 Gas supply device and gas supply method
US10975470B2 (en) * 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
CN110389602B (en) * 2018-04-19 2022-09-23 中国石油化工股份有限公司 Method for controlling content of specific gas in target container
EP3599463B1 (en) * 2018-07-26 2023-05-10 Inficon GmbH Method for adapting the concentration of sample gas in a gas mixture to be analysed by a gas chromatograph assembly, and chromatograph assembly therefore
CN109331703A (en) * 2018-10-18 2019-02-15 滁州市云米工业设计有限公司 A kind of gas phase mixed organization device based on spectrum analysis
CN109508049A (en) * 2018-10-31 2019-03-22 上海仪器仪表自控系统检验测试所有限公司 The bottled calibrating gas preparation method that gas test uses
CN109585885A (en) * 2018-12-14 2019-04-05 中国汽车技术研究中心有限公司 A kind of fuel cell automobile hydrogen ann test variable-volume concentration hydrogen gas generation system
CN112540149A (en) * 2019-09-20 2021-03-23 中国石油化工股份有限公司 Gas generating device and method
US11318431B2 (en) 2019-11-27 2022-05-03 Diversified Fluid Solutions, Llc On-demand in-line-blending and supply of chemicals
CN111346531B (en) * 2020-03-03 2022-04-15 国机铸锻机械有限公司 Double-loop double-station magnesium alloy low-pressure casting gas mixing process and device thereof
CN115032339B (en) * 2022-05-31 2023-03-17 中国矿业大学 High-concentration flue gas dilution measuring device and method

Citations (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342199A (en) * 1965-07-07 1967-09-19 Foxboro Co Digital blend system
US4042344A (en) * 1975-05-09 1977-08-16 The Broken Hill Proprietary Company Limited Process for the production of gaseous mixtures
US4275752A (en) * 1978-09-22 1981-06-30 Collier Nigel A Fluid flow apparatus and method
US4564761A (en) * 1982-03-05 1986-01-14 C.I. Ltd. Method and apparatus for the enhanced detection of a component of a material
US4705669A (en) * 1985-10-19 1987-11-10 Horiba, Ltd. Gas analyzer for simultaneously measuring many ingredients
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
US4936877A (en) * 1989-07-18 1990-06-26 Advanced Technology Materials, Inc. Dopant delivery system for semiconductor manufacture
US5054309A (en) * 1988-11-21 1991-10-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for producing low-concentration gas mixtures, and apparatus for producing the same
US5118945A (en) * 1989-04-24 1992-06-02 Siemens Aktiengesellschaft Photothermal test process, apparatus for performing the process and heat microscope
US5129412A (en) * 1991-05-08 1992-07-14 Saes Pure Gas, Inc. Aerodynamic blender
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5239856A (en) * 1988-11-21 1993-08-31 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Apparatus for producing standard gas mixtures
US5279146A (en) * 1991-08-17 1994-01-18 Horiba Ltd. Method and apparatus for real time measurement of particulate matter in combustion gases
US5376409A (en) * 1992-12-21 1994-12-27 The Research Foundation Of State University Of New York Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
US5403089A (en) * 1989-09-27 1995-04-04 Union Carbide Chemicals & Plastics Technology Corporation Method and apparatus for metering and mixing non-compressible and compressible fluids
US5436457A (en) * 1993-06-10 1995-07-25 Horiba, Ltd. Infrared gas analyzer
US5470390A (en) * 1993-05-07 1995-11-28 Teisan Kabushiki Kaisha Mixed gas supply system with a backup supply system
US5508934A (en) * 1991-05-17 1996-04-16 Texas Instruments Incorporated Multi-point semiconductor wafer fabrication process temperature control system
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5570743A (en) * 1993-06-03 1996-11-05 Halliburton Company Continuous multi-component slurrying process at oil or gas well
US5641245A (en) * 1995-05-22 1997-06-24 Westinghouse Savannah River Company, Inc. Apparatus for passive removal of subsurface contaminants
US5707500A (en) * 1991-08-12 1998-01-13 Hitachi, Ltd Vacuum processing equipment, film coating equipment and deposition method
US5826607A (en) * 1996-11-25 1998-10-27 Sony Corporation Dual exhaust controller
US5887611A (en) * 1996-12-31 1999-03-30 The University Of Florida Gas blender
US6050283A (en) * 1995-07-07 2000-04-18 Air Liquide America Corporation System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
US6067840A (en) * 1997-08-04 2000-05-30 Texas Instruments Incorporated Method and apparatus for infrared sensing of gas
US6070600A (en) * 1997-07-01 2000-06-06 Motorola, Inc. Point of use dilution tool and method
US6089027A (en) * 1998-04-28 2000-07-18 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6171641B1 (en) * 1989-12-11 2001-01-09 Hitachi, Ltd. Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus
US6190436B1 (en) * 1999-03-05 2001-02-20 The Boc Group, Inc. Ozone purification process
US20010032668A1 (en) * 2000-02-04 2001-10-25 Doty Dean L. Apparatus and method for mixing gases
US20020048213A1 (en) * 2000-07-31 2002-04-25 Wilmer Jeffrey Alexander Method and apparatus for blending process materials
US6453924B1 (en) * 2000-07-24 2002-09-24 Advanced Technology Materials, Inc. Fluid distribution system and process, and semiconductor fabrication facility utilizing same
US6612317B2 (en) * 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6617175B1 (en) * 2002-05-08 2003-09-09 Advanced Technology Materials, Inc. Infrared thermopile detector system for semiconductor process monitoring and control
US6631334B2 (en) * 2000-12-26 2003-10-07 Mks Instruments, Inc. Pressure-based mass flow controller system
US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US6689252B1 (en) * 1999-07-28 2004-02-10 Applied Materials, Inc. Abatement of hazardous gases in effluent
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US6780319B1 (en) * 1999-12-07 2004-08-24 Ondeo Degremont Method and installation for treating effluents, comprising an additional treatment of the sludge by ozonization
US6810821B2 (en) * 2002-05-08 2004-11-02 Benjamin Chun Pong Chan Hazardous waste treatment method and apparatus
US20050006799A1 (en) * 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
US6909973B2 (en) * 2003-03-28 2005-06-21 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US6953731B2 (en) * 2002-06-19 2005-10-11 Tokyo Electron Limited Fabrication process of a semiconductor device
US7058519B2 (en) * 2003-03-28 2006-06-06 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7122797B2 (en) * 2002-09-09 2006-10-17 Sensors Unlimited, Inc. Method for making an infrared detector and infrared detector

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5047352A (en) 1985-05-20 1991-09-10 Arch Development Corporation Selective chemical detection by energy modulation of sensors
US4647777A (en) * 1985-05-31 1987-03-03 Ametrek, Inc. Selective gas detector
US4935345A (en) * 1987-04-07 1990-06-19 Arizona Board Of Regents Implantable microelectronic biochemical sensor incorporating thin film thermopile
US4816294A (en) 1987-05-04 1989-03-28 Midwest Research Institute Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes
JPH06317475A (en) * 1991-07-19 1994-11-15 Terumo Corp Infrared sensor and fabrication thereof
US5288649A (en) * 1991-09-30 1994-02-22 Texas Instruments Incorporated Method for forming uncooled infrared detector
US5282473A (en) * 1992-11-10 1994-02-01 Critikon, Inc. Sidestream infrared gas analyzer requiring small sample volumes
JPH0767151B2 (en) 1993-02-25 1995-07-19 日本電気株式会社 Infrared imaging device
US5549756A (en) 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5747808A (en) 1994-02-14 1998-05-05 Engelhard Sensor Technologies NDIR gas sensor
JPH07307301A (en) * 1994-03-17 1995-11-21 Hitachi Ltd Semiconductor device and its manufacture
US5464983A (en) 1994-04-05 1995-11-07 Industrial Scientific Corporation Method and apparatus for determining the concentration of a gas
FI98325C (en) * 1994-07-07 1997-05-26 Vaisala Oy Selective infrared detector
JP4117407B2 (en) * 1995-01-31 2008-07-16 株式会社堀場製作所 CVD apparatus and film forming method using CVD apparatus
US6673533B1 (en) * 1995-03-10 2004-01-06 Meso Scale Technologies, Llc. Multi-array multi-specific electrochemiluminescence testing
US5650624A (en) 1995-04-13 1997-07-22 Engelhard Sensor Technologies, Inc. Passive infrared analysis gas sensor
US5721430A (en) 1995-04-13 1998-02-24 Engelhard Sensor Technologies Inc. Passive and active infrared analysis gas sensors and applicable multichannel detector assembles
JPH09232274A (en) * 1996-02-21 1997-09-05 Sony Corp Method for treatment surface of semiconductor substrate and surface treatment device of semiconductor substrate
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
US6544193B2 (en) 1996-09-04 2003-04-08 Marcio Marc Abreu Noninvasive measurement of chemical substances
US5874736A (en) 1996-10-25 1999-02-23 Exergen Corporation Axillary infrared thermometer and method of use
US6122042A (en) 1997-02-07 2000-09-19 Wunderman; Irwin Devices and methods for optically identifying characteristics of material objects
NL1008665C1 (en) * 1998-03-20 1999-09-21 Berkin Bv Medium flow meter.
US6444474B1 (en) 1998-04-22 2002-09-03 Eltron Research, Inc. Microfluidic system for measurement of total organic carbon
US5967992A (en) * 1998-06-03 1999-10-19 Trutex, Inc. Radiometric temperature measurement based on empirical measurements and linear functions
JP4234835B2 (en) * 1999-02-17 2009-03-04 シヤチハタ株式会社 Oil-based ink
TW479123B (en) * 1999-03-24 2002-03-11 Ishizuka Electronics Corp Thermopile-type infrared sensor and process for producing the same
US6614000B1 (en) * 1999-04-12 2003-09-02 Mitsubishi Heavy Industries, Ltd. Organic halogen compound decomposing device and operation control method therefor, and organic halogen compound decomposing method
US6396056B1 (en) 1999-07-08 2002-05-28 Air Instruments And Measurements, Inc. Gas detectors and gas analyzers utilizing spectral absorption
US7179653B2 (en) * 2000-03-31 2007-02-20 Showa Denko K.K. Measuring method for concentration of halogen and fluorine compound, measuring equipment thereof and manufacturing method of halogen compound
US6469303B1 (en) 2000-05-17 2002-10-22 Rae Systems, Inc. Non-dispersive infrared gas sensor
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
US6576972B1 (en) * 2000-08-24 2003-06-10 Heetronix High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device
US6930041B2 (en) * 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
WO2002075262A1 (en) 2001-03-16 2002-09-26 Seiko Epson Corporation Infrared detection element and method for fabricating the same and equipment for measuring temperature
US6766818B2 (en) * 2001-04-06 2004-07-27 Akrion, Llc Chemical concentration control device
EP1385558B1 (en) * 2001-05-11 2004-12-22 Steris Inc. Non-dispersive mid-infrared sensor for vaporized hydrogen peroxide
US6984584B2 (en) * 2001-12-21 2006-01-10 University Of Massachusetts Contamination suppression in chemical fluid deposition
US6828172B2 (en) * 2002-02-04 2004-12-07 Delphi Technologies, Inc. Process for a monolithically-integrated micromachined sensor and circuit
US20050211555A1 (en) * 2002-02-14 2005-09-29 Solus Biosystems, Inc. Method for multiple sample screening using IR spectroscopy
US7033542B2 (en) * 2002-02-14 2006-04-25 Archibald William B High throughput screening with parallel vibrational spectroscopy
EP1347290B1 (en) 2002-03-22 2007-07-25 Instrumentarium Corporation Gas analyzer using thermal detectors
US7129519B2 (en) * 2002-05-08 2006-10-31 Advanced Technology Materials, Inc. Monitoring system comprising infrared thermopile detector
US20040038442A1 (en) * 2002-08-26 2004-02-26 Kinsman Larry D. Optically interactive device packages and methods of assembly
US7080545B2 (en) * 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
JP3991018B2 (en) * 2003-09-01 2007-10-17 シャープ株式会社 Semiconductor device
JP2006275980A (en) * 2005-03-30 2006-10-12 Denso Corp Infrared-type gas detector
JP2009232274A (en) 2008-03-24 2009-10-08 Fuji Xerox Co Ltd Image forming system, and data transfer processing program

Patent Citations (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342199A (en) * 1965-07-07 1967-09-19 Foxboro Co Digital blend system
US4042344A (en) * 1975-05-09 1977-08-16 The Broken Hill Proprietary Company Limited Process for the production of gaseous mixtures
US4275752A (en) * 1978-09-22 1981-06-30 Collier Nigel A Fluid flow apparatus and method
US4564761A (en) * 1982-03-05 1986-01-14 C.I. Ltd. Method and apparatus for the enhanced detection of a component of a material
US4705669A (en) * 1985-10-19 1987-11-10 Horiba, Ltd. Gas analyzer for simultaneously measuring many ingredients
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
US5239856A (en) * 1988-11-21 1993-08-31 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Apparatus for producing standard gas mixtures
US5054309A (en) * 1988-11-21 1991-10-08 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for producing low-concentration gas mixtures, and apparatus for producing the same
US5118945A (en) * 1989-04-24 1992-06-02 Siemens Aktiengesellschaft Photothermal test process, apparatus for performing the process and heat microscope
US4936877A (en) * 1989-07-18 1990-06-26 Advanced Technology Materials, Inc. Dopant delivery system for semiconductor manufacture
US5403089A (en) * 1989-09-27 1995-04-04 Union Carbide Chemicals & Plastics Technology Corporation Method and apparatus for metering and mixing non-compressible and compressible fluids
US6171641B1 (en) * 1989-12-11 2001-01-09 Hitachi, Ltd. Vacuum processing apparatus, and a film deposition apparatus and a film deposition method both using the vacuum processing apparatus
US5129412A (en) * 1991-05-08 1992-07-14 Saes Pure Gas, Inc. Aerodynamic blender
US5508934A (en) * 1991-05-17 1996-04-16 Texas Instruments Incorporated Multi-point semiconductor wafer fabrication process temperature control system
US5815396A (en) * 1991-08-12 1998-09-29 Hitachi, Ltd. Vacuum processing device and film forming device and method using same
US5707500A (en) * 1991-08-12 1998-01-13 Hitachi, Ltd Vacuum processing equipment, film coating equipment and deposition method
US5279146A (en) * 1991-08-17 1994-01-18 Horiba Ltd. Method and apparatus for real time measurement of particulate matter in combustion gases
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5376409B1 (en) * 1992-12-21 1997-06-03 Univ New York State Res Found Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
US5376409A (en) * 1992-12-21 1994-12-27 The Research Foundation Of State University Of New York Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
US5470390A (en) * 1993-05-07 1995-11-28 Teisan Kabushiki Kaisha Mixed gas supply system with a backup supply system
US5570743A (en) * 1993-06-03 1996-11-05 Halliburton Company Continuous multi-component slurrying process at oil or gas well
US5436457A (en) * 1993-06-10 1995-07-25 Horiba, Ltd. Infrared gas analyzer
US5518528A (en) * 1994-10-13 1996-05-21 Advanced Technology Materials, Inc. Storage and delivery system for gaseous hydride, halide, and organometallic group V compounds
US5641245A (en) * 1995-05-22 1997-06-24 Westinghouse Savannah River Company, Inc. Apparatus for passive removal of subsurface contaminants
US6050283A (en) * 1995-07-07 2000-04-18 Air Liquide America Corporation System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing
US5826607A (en) * 1996-11-25 1998-10-27 Sony Corporation Dual exhaust controller
US5887611A (en) * 1996-12-31 1999-03-30 The University Of Florida Gas blender
US6406555B1 (en) * 1997-07-01 2002-06-18 Motorola Inc. Point of use dilution tool and method
US6070600A (en) * 1997-07-01 2000-06-06 Motorola, Inc. Point of use dilution tool and method
US6067840A (en) * 1997-08-04 2000-05-30 Texas Instruments Incorporated Method and apparatus for infrared sensing of gas
US6089027A (en) * 1998-04-28 2000-07-18 Advanced Technology Materials, Inc. Fluid storage and dispensing system
US6190436B1 (en) * 1999-03-05 2001-02-20 The Boc Group, Inc. Ozone purification process
US6689252B1 (en) * 1999-07-28 2004-02-10 Applied Materials, Inc. Abatement of hazardous gases in effluent
US6780319B1 (en) * 1999-12-07 2004-08-24 Ondeo Degremont Method and installation for treating effluents, comprising an additional treatment of the sludge by ozonization
US20010032668A1 (en) * 2000-02-04 2001-10-25 Doty Dean L. Apparatus and method for mixing gases
US6772781B2 (en) * 2000-02-04 2004-08-10 Air Liquide America, L.P. Apparatus and method for mixing gases
US6612317B2 (en) * 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6453924B1 (en) * 2000-07-24 2002-09-24 Advanced Technology Materials, Inc. Fluid distribution system and process, and semiconductor fabrication facility utilizing same
US20020048213A1 (en) * 2000-07-31 2002-04-25 Wilmer Jeffrey Alexander Method and apparatus for blending process materials
US6631334B2 (en) * 2000-12-26 2003-10-07 Mks Instruments, Inc. Pressure-based mass flow controller system
US6617175B1 (en) * 2002-05-08 2003-09-09 Advanced Technology Materials, Inc. Infrared thermopile detector system for semiconductor process monitoring and control
US6810821B2 (en) * 2002-05-08 2004-11-02 Benjamin Chun Pong Chan Hazardous waste treatment method and apparatus
US6953731B2 (en) * 2002-06-19 2005-10-11 Tokyo Electron Limited Fabrication process of a semiconductor device
US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US20050006799A1 (en) * 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
US7122797B2 (en) * 2002-09-09 2006-10-17 Sensors Unlimited, Inc. Method for making an infrared detector and infrared detector
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US6909973B2 (en) * 2003-03-28 2005-06-21 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7058519B2 (en) * 2003-03-28 2006-06-06 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7063097B2 (en) * 2003-03-28 2006-06-20 Advanced Technology Materials, Inc. In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US20060217896A1 (en) * 2003-03-28 2006-09-28 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040007180A1 (en) * 2002-07-10 2004-01-15 Tokyo Electron Limited Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method
US20060217896A1 (en) * 2003-03-28 2006-09-28 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7373257B2 (en) 2003-03-28 2008-05-13 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US20080213925A1 (en) * 2003-03-28 2008-09-04 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7711496B2 (en) 2003-03-28 2010-05-04 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US20100217415A1 (en) * 2003-03-28 2010-08-26 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents
US7925450B2 (en) 2003-03-28 2011-04-12 Advanced Technology Materials, Inc. Photometrically modulated delivery of reagents

Also Published As

Publication number Publication date
US7325560B2 (en) 2008-02-05
CN1768312A (en) 2006-05-03
WO2004088718A2 (en) 2004-10-14
US7711496B2 (en) 2010-05-04
EP1627265A2 (en) 2006-02-22
US20080213925A1 (en) 2008-09-04
US20100217415A1 (en) 2010-08-26
US7925450B2 (en) 2011-04-12
US20050257828A1 (en) 2005-11-24
EP1627265A4 (en) 2006-07-26
KR101016856B1 (en) 2011-02-22
JP2006521707A (en) 2006-09-21
WO2004088718A3 (en) 2005-04-28
US8244482B2 (en) 2012-08-14
US7063097B2 (en) 2006-06-20
US20110189797A1 (en) 2011-08-04
KR20060032134A (en) 2006-04-14
US20040204897A1 (en) 2004-10-14
US6909973B2 (en) 2005-06-21

Similar Documents

Publication Publication Date Title
US7325560B2 (en) In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration
US9666435B2 (en) Apparatus and process for integrated gas blending
US5214952A (en) Calibration for ultra high purity gas analysis
KR101367575B1 (en) System for producing primary standard gas mixtures
JP2006521707A5 (en)
US5661225A (en) Dynamic dilution system
US20020152797A1 (en) Gas delivery apparatus and method for monitoring a gas phase species therein
US20060243207A1 (en) Fluid mixing and delivery system
US7003215B2 (en) Vapor flow controller
JP2001133366A (en) Reference gas generator
JP3804798B2 (en) Evaporation supply device for liquid organometallic compounds

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;POCO GRAPHITE, INC.;ATMI, INC.;AND OTHERS;REEL/FRAME:032815/0852

Effective date: 20140430

Owner name: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT, NEW Y

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;POCO GRAPHITE, INC.;ATMI, INC.;AND OTHERS;REEL/FRAME:032815/0852

Effective date: 20140430

AS Assignment

Owner name: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;POCO GRAPHITE, INC.;ATMI, INC.;AND OTHERS;REEL/FRAME:032812/0192

Effective date: 20140430

Owner name: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT, NEW Y

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;POCO GRAPHITE, INC.;ATMI, INC.;AND OTHERS;REEL/FRAME:032812/0192

Effective date: 20140430

AS Assignment

Owner name: ENTEGRIS, INC., MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ADVANCED TECHNOLOGY MATERIALS, INC.;REEL/FRAME:034894/0025

Effective date: 20150204

FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: POCO GRAPHITE, INC., MASSACHUSETTS

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0032

Effective date: 20181106

Owner name: ATMI PACKAGING, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0032

Effective date: 20181106

Owner name: ADVANCED TECHNOLOGY MATERIALS, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0032

Effective date: 20181106

Owner name: ATMI, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0032

Effective date: 20181106

Owner name: ENTEGRIS, INC., MASSACHUSETTS

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0032

Effective date: 20181106

Owner name: ATMI PACKAGING, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0151

Effective date: 20181106

Owner name: POCO GRAPHITE, INC., MASSACHUSETTS

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0151

Effective date: 20181106

Owner name: ATMI, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0151

Effective date: 20181106

Owner name: ENTEGRIS, INC., MASSACHUSETTS

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0151

Effective date: 20181106

Owner name: ADVANCED TECHNOLOGY MATERIALS, INC., CONNECTICUT

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT;REEL/FRAME:047477/0151

Effective date: 20181106

AS Assignment

Owner name: GOLDMAN SACHS BANK USA, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;SAES PURE GAS, INC.;REEL/FRAME:048811/0679

Effective date: 20181106

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12

AS Assignment

Owner name: MORGAN STANLEY SENIOR FUNDING, INC., MARYLAND

Free format text: ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679;ASSIGNOR:GOLDMAN SACHS BANK USA;REEL/FRAME:050965/0035

Effective date: 20191031

AS Assignment

Owner name: TRUIST BANK, AS NOTES COLLATERAL AGENT, NORTH CAROLINA

Free format text: SECURITY INTEREST;ASSIGNORS:ENTEGRIS, INC.;ENTEGRIS GP, INC.;POCO GRAPHITE, INC.;AND OTHERS;REEL/FRAME:060613/0072

Effective date: 20220706