US20060289116A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- US20060289116A1 US20060289116A1 US11/488,059 US48805906A US2006289116A1 US 20060289116 A1 US20060289116 A1 US 20060289116A1 US 48805906 A US48805906 A US 48805906A US 2006289116 A1 US2006289116 A1 US 2006289116A1
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- process gas
- plasma
- substrate
- gas supply
- processing vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Definitions
- the present invention generally related to plasma processing apparatus and more particularly to a microwave plasma processing apparatus.
- Plasma process and plasma processing apparatus are indispensable technology for fabricating ultrafine semiconductor devices of these days called deep submicron devices or deep subquarter micron devices characterized by a gate length of near 0.1 ⁇ m or less, or for fabricating ultra high-resolution flat-panel display devices including liquid crystal display devices.
- Such a conventional plasma processing device has several inherent problems, associated with its high electron temperature, in that the semiconductor devices formed on the substrate undergo damaging and that significant metal contamination is caused as a result of sputtering of a chamber wall.
- a microwave plasma processing apparatus that uses high-density plasma excited by a microwave electric field, in place of a direct-current magnetic field.
- a plasma processing apparatus that causes excitation of plasma by radiating a microwave into a processing vessel from a planar antenna (radial line slot antenna) having a number of slots disposed so as to form a uniform microwave, such that the microwave electric field causes ionization of a gas in a vacuum vessel.
- the microwave plasma thus formed is characterized by low electron temperature, and damaging or metal contamination of the substrate is avoided. Further, it is possible to form uniform plasma over a large surface area, and it can be easily applied to the fabrication process of a semiconductor device using a large diameter semiconductor substrate or large size liquid crystal display device.
- FIGS. 1A and 1B show the construction of a conventional microwave plasma processing apparatus 100 having such a radial line slot antenna, wherein FIG. 1A shows the microwave plasmas processing apparatus in a cross-sectional view while FIG. 1B shows the construction of the radial line slot antenna.
- the microwave plasma processing apparatus 100 has a processing chamber 101 evacuated from plural evacuation ports 116 , and there is formed a stage 115 for holding a substrate 114 to be processed.
- a ring-shaped space 101 A is formed around the stage 115 , and the plural evacuation ports 116 are formed in communication with the foregoing space 101 A with a uniform interval, and hence in axial symmetry with regard to the substrate. Thereby, it becomes possible to evacuate the processing chamber 101 uniformly through the space 101 A and the evacuation ports 116 .
- a plate 103 of plate-like form at the location corresponding to the substrate 114 on the stage 115 as a part of the outer wall of the processing chamber 101 via a seal ring 109 , wherein the shower plate 103 is formed of a dielectric material of small loss and includes a large number of apertures 107 . Further, a cover plate 102 also of a dielectric material of small loss is provided on the outer side of the shower plate 103 via another seal ring 108 .
- the shower plate 103 is formed with a passage 104 of a plasma gas on the top surface thereof, and each of the plural apertures 107 are formed in communication with the foregoing plasma gas passage 104 . Further, there is formed a plasma gas supply passage 106 in the interior of the shower plate 103 in communication with a plasma gas supply port 105 provided on the outer wall of the processing vessel 101 .
- the plasma gas of Ar, Kr or the like supplied to the foregoing plasma gas supply port 105 is supplied to the foregoing apertures 107 from the supply passage 106 via the passage 104 and is released into a space 101 B right underneath the shower plate 103 in the processing vessel 101 from the apertures 107 with substantially uniform concentration.
- a radial line slot antenna 110 having a radiation surface shown in FIG. 1B on the outer side of the cover plate 102 with a separation of 4-5 mm from the cover plate 102 .
- the radial line slot antenna 110 is connected to an external microwave source (not shown) via a coaxial waveguide 110 A and causes excitation of the plasma gas released into the space 101 B by the microwave from the microwave source. It should be noted that the gap between the cover plate 102 and the radiation surface of the radial line slot antenna 110 is filled with the air.
- the radial line slot antenna 110 is formed of a flat disk-like antenna body 110 B connected to an outer waveguide of the coaxial waveguide 110 A and a radiation plate 110 C is provided on the mouth of the antenna body 110 B, wherein the radiation plate 110 C is formed with a number of slots 110 a and slots 110 b wherein slots 110 b are formed in a direction crossing the slots 110 a perpendicularly as represented in FIG. 1B . Further, a retardation plate 110 D of a dielectric film of uniform thickness is inserted between the antenna body 110 B and the radiation plate 110 C.
- the microwave supplied from the coaxial waveguide 110 spreads between the disk-like antenna body 110 B and the radiation plate 110 C as it is propagated in the radial direction, wherein there occurs a compression of wavelength as a result of the action of the retardation plate 110 D.
- the slots 110 a and 110 b in concentric relationship in correspondence to the wavelength of the radially propagating microwave so as to cross perpendicularly with each other, it becomes possible to emit a plane wave having a circular polarization state in a direction substantially perpendicular to the radiation plate 110 C.
- the high-density plasma thus formed is characterized by a low electron temperature and thus, there is caused no damaging of the substrate 114 and there is caused no metal contamination as a result of the sputtering of the vessel wall of the processing vessel 101 .
- a conductive structure 111 in the processing vessel 101 between the shower plate 103 and the substrate 114 wherein the conductive structure is formed with a number of nozzles 113 supplied with a processing gas from an external processing gas source (not shown) via a processing gas passage 112 formed in the processing vessel 101 , and each of the nozzles 113 releases the processing gas supplied thereto into a space 101 C between the conductive structure 111 and the substrate 114 .
- the conductive structure 111 is formed with openings between adjacent nozzles 113 with a size such that the plasma formed in the space 101 B passes efficiently from the space 101 B to the space 101 C by way of diffusion.
- the processing gas is excited by the high-density plasma formed in the space 101 B and a uniform plasma processing is conducted on the substrate 114 efficiently and with high rate, without damaging the substrate or the devices on the substrate, and without contaminating the substrate.
- the microwave emitted from the radial line slot antenna is blocked by the conductive structure and there is no possibility of such a microwave causes damaging in the substrate 114 .
- FIG. 2 is a bottom view showing a construction of the conventional process gas supply part 111 .
- the process gas supply part 111 is a disk-like plate formed of a stainless steel added with Al or the like.
- the process gas supply part 111 there are formed a number of large apertures 111 B disposed in a matrix form to pass high-density plasma in the space 101 B.
- a process gas distribute passage 112 A in communication with the process gas passage 112 along the outer circumference of the disk-like plate 111 .
- a lattice-shaped gas passage 113 A in communication with the process gas distribute passage 112 A.
- a process gas is released almost uniformly from a number of the nozzle apertures 113 to a surface of the substrate 114 to be processed represented in FIG. 2 by a broken line.
- the nozzle apertures 113 are formed toward the substrate 114 in the bottom view of FIG. 2 .
- the process gas is mainly released on the fringe of the substrate 114 . Accordingly, it is likely that the process gas is scarce around the center of the substrate 114 .
- a distance between the shower plate 103 and the substrate 114 is shortened in order to evacuate the spaces 101 B and 101 C immediately. Therefore, the process gas released from the nozzle apertures 113 cannot diffuse sufficiently because the process gas reaches the substrate 113 immediately.
- the plasma processing apparatus 100 in FIGS. 1A and 1B has the problem that the temperature thereof rises because the process gas supply part 111 is exposed to a large amount of thermal flux caused by high-density plasma.
- Another and more specific object of the present invention is to provide a plasma processing apparatus comprising a process gas supply part capable of supplying a process gas uniformly.
- Another object of the present invention is to provide a plasma processing apparatus capable of avoiding a rise in temperature thereof.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed on the stage; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed on the stage; and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
- the diffusion part corresponding to a nozzle aperture releasing the process gas, thereby curving a flow of the process gas in a lateral direction and facilitating diffusion and mixture of the process gas.
- the process gas supply part comprises a first part having the process gas passage and the nozzle aperture and a second part having the diffusion part, it becomes possible to form easily the diffusion part in a depression form corresponding to the nozzle aperture.
- the diffusion part makes it possible to further curve the flow of the process gas that has been curved in the lateral direction, thereby further facilitating diffusion and mixture of the process gas.
- the first part and the second part are formed of different members and there is provided a coolant passage in the second part. As a result, it is possible to suppress a rise in temperature of the process gas supply part.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed on the stage; and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in communication with the process gas passage, the second aperture releasing the process gas in a slanting direction with respect to the substrate to be processed.
- the process gas supplied from the process gas supply part bounces on a surface of the substrate to be processed, thereby reaching a microwave window and the process gas supply part. As a result, it becomes possible to avoid the problem that deposition arises.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave window provided on a part of the outer wall of the processing vessel so as to face the substrate to be processed on the stage, the microwave window being formed of a dielectric material; a microwave antenna coupled to the microwave window; a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage; and a temperature control part controlling a surface temperature of the microwave window around 150° C. with respect to a side faced on the substrate to be processed.
- the temperature control of the microwave window around 150° C. suppresses formation of deposition on a surface of the microwave window.
- FIGS. 1A and 1B are diagrams showing a structure of a conventional microwave plasma processing apparatus that uses a radial line slot antenna
- FIG. 2 is a bottom diagram showing a structure of a process gas supply mechanism of the microwave plasma processing apparatus of FIG. 1 ;
- FIGS. 3A and 3B are diagrams showing a structure of a microwave plasma processing apparatus according to a first embodiment of the present invention
- FIG. 4 is a perspective view showing a structure of a process gas supply mechanism of the microwave plasma processing apparatus of FIG. 3 ;
- FIG. 5 is a bottom view showing a disk-like conductive body constituting a portion of the process gas supply mechanism in FIG. 4 ;
- FIG. 6 is a plane view showing a disk-like conductive body constituting another portion of the process gas supply mechanism in FIG. 4 ;
- FIG. 7 is a diagram explaining functions of the process gas supply mechanism in FIG. 4 ;
- FIG. 8 is an enlarged view showing a portion of the disk-like conductive body in FIG. 5 ;
- FIG. 9 is a diagram explaining functions of the disk-like conductive body in FIG. 5 ;
- FIG. 10 is a diagram showing a structure of a process gas supply mechanism according to a second embodiment of the present invention.
- FIG. 11 is a diagram showing a structure of a plasma processing apparatus according to a third embodiment of the present invention.
- FIG. 12 is a diagram showing a structure of a plasma processing apparatus according to a fourth embodiment of the present invention.
- FIG. 13 is a diagram showing a structure of a plasma processing apparatus according to a fifth embodiment of the present invention.
- FIG. 14 is a diagram showing a structure of a plasma processing apparatus according to a sixth embodiment of the present invention.
- FIG. 15 is a diagram showing a structure of a plasma processing apparatus according to a seventh embodiment of the present invention.
- FIG. 16 is a diagram showing a structure of a plasma processing apparatus according to an eighth embodiment of the present invention.
- FIGS. 17A and 17B are diagrams showing portions of a plasma processing apparatus according to a ninth embodiment of the present invention.
- FIGS. 3A and 3B are diagrams showing a construction of a microwave plasma processing apparatus 10 according to a first embodiment of the present invention.
- the microwave plasma processing apparatus 10 includes a processing vessel 11 and a stage 13 provided in the processing vessel 11 for holding a substrate 12 to be processed by an electrostatic chuck, wherein the stage 13 is preferably formed of AlN or Al 2 O 3 by a hot isostatic pressing (HIP) process.
- the processing vessel 11 there are formed at least two or preferably more than or equal to three evacuation ports 11 a in a space 11 A surrounding the stage 13 with an equal distance, and hence with an axial symmetry with respect to the substrate 12 on the stage 13 .
- the processing vessel 11 is evacuated to a low pressure via the evacuation port 11 a by a gradational lead screw pump to be explained later.
- the processing vessel 11 is preferably formed of an austenite stainless steel containing Al, and there is formed a protective film of aluminum oxide on the inner wall surface by an oxidizing process. Further, there is formed a disk-like shower plate 14 of dense Al 2 O 3 , formed by a HIP process, in the part of the outer wall of the processing vessel 11 corresponding to the substrate 12 as a part of the outer wall, wherein the shower plate 14 includes a large number of nozzle apertures 14 A.
- the Al 2 O 3 shower plate 14 thus formed by a HIP process is formed by using an Y 2 O 3 additive and has porosity of 0.03% or less. This means that the Al 2 O 3 shower plate is substantially free from pores or pinholes and has a very large, while not so large as that of AlN, thermal conductivity for a ceramic of 30 W/m ⁇ K.
- the shower plate 14 is mounted on the processing vessel 11 via a seal ring 11 s , and a cover plate 15 of dense Al 2 O 3 formed also of an HIP process is provided on the shower plate 14 via a seal ring 11 t .
- the shower plate 14 is formed with a depression 14 B communicating with each of the nozzle apertures 14 A and serving for the plasma gas passage, at the side thereof contacting with the cover plate 15 , wherein the depression 14 B also communicates with another plasma gas passage 14 C formed in the interior of the shower plate 14 in communication with a plasma gas inlet 11 p formed on the outer wall of the processing vessel 11 .
- the shower plate 14 is held by an extending part lib formed on the inner wall of the processing vessel 11 , wherein the extending part 11 b is formed with a round surface at the part holding the shower plate 14 so as to suppress electric discharge.
- the plasma gas such as Ar or Kr supplied to the plasma gas inlet 11 p is supplied to a space 11 B right underneath the shower plate 14 uniformly via the apertures 14 A after being passed through the passages 14 C and 14 B in the shower plate 14 .
- a radial line slot antenna 20 formed of a disk-like slot plate 16 formed with a number of slots 16 a and 16 b shown in FIG. 3B in intimate contact with the cover plate 15 , a disk-like antenna body 17 holding the slot plate 16 , and a retardation plate 18 of a dielectric material of low loss such as Al 2 O 3 , SiO 2 or Si 3 N 4 sandwiched between the slot plate 16 and the antenna body 17 .
- the radial line slot antenna 20 is mounted on the processing vessel 11 by way of a seal ring 11 u , and a microwave of 2.45 GHz or 8.3 GHz frequency is fed to the radial line slot antenna 20 from an external microwave source (not shown) via a coaxial waveguide 21 .
- the microwave thus supplied is radiated into the interior of the processing vessel from the slots 16 a and 16 b on the slot plate 16 via the cover plate 15 and the shower plate 14 .
- the microwave causes excitation of plasma in the plasma gas supplied from the apertures 14 A in the space 11 B right underneath the shower plate 14 .
- the cover plate 15 and the shower plate 14 are formed of Al 2 O 3 and function as an efficient microwave-transmitting window.
- the plasma gas is held at the pressure of about 6666 Pa-13332 Pa (about 50-100 Torr) in the foregoing passages 14 A- 14 C.
- the microwave plasma processing apparatus 10 of the present embodiment has a ring-shaped groove 15 g on a part of the processing vessel 11 so as to engage with the slot plate 16 .
- the pressure in the gap formed between the slot plate 16 and the cover plate 15 is reduced and the radial line slot antenna 20 is urged firmly upon the cover plate 15 by the atmospheric pressure.
- a gap includes not only the slots 16 a and 16 b formed in the slot plate 16 but also a gap formed by other various reasons. It should be noted further that such a gap is sealed by the seal ring 11 u provided between the radial line slot antenna 20 and the processing vessel 11 .
- an outer waveguide tube 21 A of the coaxial waveguide 21 A is connected to the disk-like antenna body 17 while a central conductor 21 B is connected to the slot plate 16 via an opening formed in the retardation plate 18 .
- the microwave fed to the coaxial waveguide 21 A is propagated in the radial direction between the antenna body 17 and the slot plate 16 and is emitted from the slots 16 a and 16 b.
- FIG. 3B shows the slots 16 a and 16 b formed on the slot plate 16 .
- the slots 16 a are arranged in a concentric manner such that there is provided a slot 16 b for each slot 16 a such that the slot 16 b crosses the slot 16 a perpendicularly and such that the slot 16 b is aligned concentrically with the slot 16 a .
- the slots 16 a and 16 b are formed with an interval corresponding to the wavelength of the microwave compressed by the radiation plate 16 in the radial direction of the slot plate 16 , and as a result, the microwave is radiated from the slot plate 16 in the form of a near plane wave. Because the slots 16 a and the slots 16 b are formed in the mutually perpendicular relationship, the microwave thus radiated forms a circularly polarized wave including two perpendicular polarization components.
- a coolant block 19 formed with a coolant water passage 19 A on the antenna body 17 , and the heat accumulated in the shower plate 14 is absorbed via the radial line slot antenna 20 by cooling the coolant block 19 by the coolant water in the coolant water passage 19 A.
- the coolant water passage 19 A is formed on the coolant block 19 in a spiral form, and coolant water having a controlled oxidation-reduction potential is supplied thereto, wherein the control of the oxidation reduction potential is achieved by eliminating oxygen dissolved in the coolant water by way of bubbling of an H 2 gas.
- a process gas supply mechanism 31 in the processing vessel 11 between the shower plate 14 and the substrate 12 on the stage 13 wherein the process gas supply mechanism 31 has gas passages 31 A arranged in a lattice shape and releases a process gas supplied from a process gas inlet port 11 r provided on the outer wall of the processing vessel 11 through a large number of process gas nozzle apertures.
- desired uniform substrate processing is achieved in a space 11 C between the process gas supply structure 31 and the substrate 12 .
- Such substrate processing includes plasma oxidation processing, plasma nitridation processing, plasma oxynitridation processing, and plasma CVD processing.
- a reactive ion etching of the substrate 12 by supplying a readily decomposing fluorocarbon gas such as C 4 F 8 , C 5 F 8 or C 4 F 6 or an etching gas containing F or Cl and further by applying a high-frequency voltage to the stage 13 from a high-frequency power source 13 A.
- a readily decomposing fluorocarbon gas such as C 4 F 8 , C 5 F 8 or C 4 F 6 or an etching gas containing F or Cl
- the microwave plasma processing apparatus 10 of the present embodiment it is possible to avoid deposition of reaction byproducts on the inner wall of the processing vessel by heating the outer wall of the processing vessel 11 to a temperature of about 150° C. Thereby, the microwave plasma processing apparatus 10 can be operated constantly and with reliability, by merely conducing a dry cleaning process once a day or so.
- FIG. 4 is a bottom view showing a structure of the process gas supply mechanism 31 of FIG. 3A .
- the process gas supply mechanism 31 is formed in a stack of disk-like conductive members 31 1 and 31 2 such as an Al alloy containing Mg or a stainless steel added with Al.
- the apertures 31 A disposed in a matrix form to serve for a plasma gas passage.
- the aperture 31 A has a size of 19 mm ⁇ 19 mm and is provided iteratively at a pitch of 24 mm both in the row direction and in the column direction.
- the process gas supply mechanism 31 has a total thickness of about 8.5 mm and is typically mounted with a separation of about 16 mm from the surface of the substrate 12 .
- FIG. 5 is a bottom diagram showing a structure of the disk-like conductive member 31 1 in FIG. 4 .
- a lattice-shaped process gas passage 31 B in communication with the process gas supply passage 31 C formed along an outer circumference of the disk-like conductive member 31 1 represented by a broken line in FIG. 5 .
- the process gas supply passage 31 C is connected to the process gas inlet port 11 r .
- a large number of process gas nozzle apertures 31 D in communication with the process gas passage 31 B. The process gas is released from the process gas nozzle apertures 31 D to the disk-like conductive member 31 2 .
- FIG. 6 is a plane view showing a structure of the disk-like conductive member 31 2 .
- process gas apertures 31 A′ disposed in a matrix form corresponding to the process gas apertures 31 A in the disk-like conductive member 31 1 .
- the process gas apertures 31 A′ are defined by a lattice-shaped structure 31 E in the disk-like conductive member 31 2 .
- FIG. 6 in the lattice-shaped structure 31 , there are formed depressions 31 F of a typical depth of about 1 mm for each of the process gas nozzle apertures 31 D in the disk-like conductive member 31 1 , wherein the depression 31 F prevents a process gas released from the process gas nozzle apertures 31 D from going straight, whereby a flow of the process gas flows is curved as shown in FIG. 7 .
- the depression 31 F is provided as a diffusion part.
- FIG. 7 is a sectional view of a portion of the process gas supply mechanism 31 in FIG. 4 , wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- FIG. 8 is an enlarging view showing a portion of the disk-like conductive member 31 2 in FIG. 6 .
- depressions 31 F 1 through 31 F 4 as a diffusion part 31 F, wherein a pair of depressions being mutually faced with respect to the process gas aperture 31 A′, for example, a pair of the depressions 31 F 1 and 31 F 2 , or a pair of the depressions 31 F 3 and 31 F 4 , is formed alternately.
- a flow of a process gas curved laterally by the depression 31 F 2 hits a portion 31 E 1 of the lattice-shaped structure 31 E in which the depression 31 F 1 is not formed, thereby curving.
- a flow of a process gas curved laterally by the depression 31 F 3 hits a portion 31 E 4 of the lattice-shaped structure 31 E in which the depression 31 F 4 is not formed, thereby curving.
- a flow of a process gas curved laterally by the depression 31 F 4 hits a portion 31 E 3 of the lattice-shaped structure 31 E in which the depression 31 F 3 is not formed, thereby curving.
- the lattice-shaped process gas passage 31 B and the process gas nozzle apertures 31 D are provided to cover a slightly larger range than the substrate 12 represented by a broken line in FIG. 5 .
- the plasma-excited process gas makes it possible to perform a uniform process.
- an iterated pitch of the lattice-shaped process gas apertures is set shorter than a wavelength of the foregoing microwave, whereby the process gas supply mechanism 31 forms a surface of short circuit of the microwave.
- microwave excitation of plasma occurs only in the space 11 B and a process gas is activated in the space 11 C including a surface of the substrate 12 by plasma diffusing from the excited space 11 B.
- the microwave plasma processing apparatus 10 uses the process gas supply mechanism 31 to control the uniform supply of a process gas, thereby eliminating an excessive amount of dissociation of the process gas on the surface of the substrate 12 . Even if there is formed a structure of a large aspect ratio on the surface of the substrate 12 , it is possible to process a desirable substrate as far as an inner portion of such an aspect structure. Thus, the microwave plasma processing apparatus 10 is useful for fabricating a plurality of generations of semiconductor apparatuses differing in designing rules.
- the disk-like conductive members 31 1 and 31 2 may be formed of an Al alloy containing Mg or a stainless steel added with Al.
- the Al alloy containing Mg it is preferable to form membrane of fluoride on surfaces of the members.
- the disk-like conductive members 31 1 and 31 2 are formed of the stainless steel added with Al, it is desirable to form insulating membrane of alumina on the surfaces of the members.
- incident energy is small because of a low electron temperature in the excited plasma, thereby avoiding the problem that metal contamination occurs to the substrate 12 by sputtering of the process gas supply mechanism 31 .
- the process. gas supply mechanism 31 may be formed of a ceramic such as alumina.
- either of the disk-like conductive members 31 1 or 31 2 is formed of a conductive material and the other is formed of an insulator.
- FIG. 10 shows a structure of a process gas supply mechanism 41 according to a second embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- FIG. 10 there are additionally formed L-shaped spacers 31 L 1 through 31 L 4 on the lattice-shaped structure 31 E, wherein the depressions 31 F 1 through 31 F 4 are defined by the spacers 31 L 1 through 31 L 4 .
- FIG. 10 The structure of FIG. 10 is easy to construct. As a result, it is possible to decrease manufacturing cost of the plasma processing apparatus.
- FIG. 11 shows a structure of a plasma processing apparatus 10 A according to a third embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the foregoing shower plate 14 is removed and there are instead formed a plurality of plasma gas supply pipes 11 P in the process vessel 11 in communication with a gas passage 11 p , preferably with symmetry.
- the plasma processing apparatus 10 A it is possible to simplify the structure thereof and decrease the manufacturing cost thereof.
- FIG. 12 shows a plasma processing apparatus 10 B according to a fourth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- a taper part at a connecting part between the coaxial waveguide 21 and the radial line slot antenna 20 in the plasma processing apparatus shown in FIGS. 3A and 3B , thereby decreasing rapid change of impedance in the connecting part and the reflection of microwave thereof.
- a taper part 21 b at an edge of a central conductive body 21 B in the coaxial waveguide 21 and a taper part 21 a at a connecting part between a coaxial waveguide 21 A and an antenna body 17 .
- FIG. 13 shows a plasma processing apparatus 10 C according to a fifth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the foregoing shower plate 14 is removed from the plasma processing apparatus 10 B in FIG. 12 and there are formed a plurality of plasma gas supply pipes 11 P in the process vessel 11 in communication with the gas passage 11 p , preferably with symmetry.
- the plasma processing apparatus 10 A there is formed a taper part at a connecting part between the coaxial waveguide 21 and the radial line slot antenna 20 , thereby suppressing reflection of microwave caused by rapid change of impedance.
- FIG. 14 shows a structure of a plasma processing apparatus 10 D according to a fourth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the retardation plate 18 between the edge 21 b of the central conductive body 21 B of the coaxial waveguide 21 and the slot plate 16 , wherein the retardation plate 18 is detached from the slot plate 16 .
- FIG. 15 shows a structure of a plasma processing apparatus 10 E according to a seventh embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the shower plate 14 is removed from the plasma processing apparatus 10 D in FIG. 14 , and there are formed a plurality of plasma gas supply pipes 11 P in the process vessel 11 in communication with the gas passage 11 p , preferably with symmetry.
- the plasma processing apparatus 10 E it is possible to make the structure thereof simpler than that of the plasma processing apparatus 10 D and decrease considerably manufacturing cost of the plasma processing apparatus.
- FIG. 16 shows a structure of a plasma processing apparatus 10 F according to an eighth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the cover plate 15 is removed from the plasma processing apparatus 10 E and the slot plate 16 of the radial line slot antenna 20 is exposed to the interior of the processing vessel 11 .
- FIGS. 17A and 17B are a bottom view and a sectional view showing a structure of the process gas supply mechanism 51 according to a ninth embodiment of the present invention, respectively, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted.
- the process gas supply mechanism 31 includes a spoke part 51 B that is provided as a process gas passage and is extended in the radial direction and a concentric ring-shaped part 51 A that is formed as a process gas passage and is held by the spoke part 51 B, wherein there are formed a large number of process gas supply nozzle apertures 51 C on a bottom surface of the concentric ring-shaped part 51 A.
- the process gas supply nozzle apertures 51 C are formed with a slant and releases a process gas in a slanting direction with respect to the substrate 12 .
- the process gas When the process gas is released in the slanting direction from the process gas supply nozzle apertures 51 C to the substrate 12 , the released process gas bounces off the substrate 12 , thereby avoiding the problem that there is formed deposition of reaction byproducts on a surface of the shower plate 103 .
- the concentric ring-shaped part 51 A has a structure such that a section in which there are formed grooves corresponding to process gas supply passages covers a surface of a U-shaped part 51 a with a lid 51 b .
- the process gas nozzle apertures 51 C can be formed by a slanting processing of the U-shaped part 51 a.
- the foregoing coolant block 19 serves as a temperature control apparatus under a substrate processing apparatus 10 in FIG. 3A , a substrate processing apparatus 10 A in FIG. 11 , a substrate processing apparatus 10 B in FIG. 12 , a substrate processing apparatus 10 C in FIG. 13 , a substrate processing apparatus 10 D in FIG. 14 or a substrate processing apparatus 10 E in FIG. 15 , wherein the coolant block 19 controls a surface temperature of the shower plate 13 or the cover plate 15 with respect to the side faced on the substrate 12 around 150° C. via the radial line slot antenna 20 .
- a process gas supply mechanism shown in FIGS. 17A and 17B may be used.
- a microwave plasma processing apparatus in a microwave plasma processing apparatus, it is possible to supply a process gas to an interior of a processing vessel uniformly and perform a uniform plasma process.
Abstract
A plasma processing apparatus comprises a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a plasma gas supply part for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed, and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
Description
- This application is a divisional of application Ser. No. 10/276,673, filed Nov. 18, 2002, which is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-094272, filed Mar. 28, 2001; and PCT International Application No. PCT/JP02/03108, filed Mar. 28, 2002, the entire contents of both of which are incorporated by herein by reference.
- The present invention generally related to plasma processing apparatus and more particularly to a microwave plasma processing apparatus.
- Plasma process and plasma processing apparatus are indispensable technology for fabricating ultrafine semiconductor devices of these days called deep submicron devices or deep subquarter micron devices characterized by a gate length of near 0.1 μm or less, or for fabricating ultra high-resolution flat-panel display devices including liquid crystal display devices.
- Conventionally, various plasma excitation methods have been used in plasma processing apparatuses used for fabrication of semiconductor devices or liquid crystal display devices. Particularly, a parallel-plate type high-frequency excitation plasma processing apparatus or an induction-coupled plasma processing apparatus are used commonly. However, such conventional plasma processing apparatuses have a drawback of non-uniform plasma formation in that the region of high electron density is limited, and it has been difficult to conduct a uniform process high electron density is limited, and it has been difficult to conduct a uniform process over the entire substrate surface with large processing rate, and hence with large throughput. This problem becomes particularly acute when processing a large diameter substrate. Further, such a conventional plasma processing device has several inherent problems, associated with its high electron temperature, in that the semiconductor devices formed on the substrate undergo damaging and that significant metal contamination is caused as a result of sputtering of a chamber wall. Thus, there are increasing difficulties in such conventional plasma processing apparatuses to meet for the stringent demand of further device miniaturization and further improvement of productivity of semiconductor devices or liquid crystal display devices.
- Meanwhile, there are proposals of a microwave plasma processing apparatus that uses high-density plasma excited by a microwave electric field, in place of a direct-current magnetic field. For example, there is a proposal of a plasma processing apparatus that causes excitation of plasma by radiating a microwave into a processing vessel from a planar antenna (radial line slot antenna) having a number of slots disposed so as to form a uniform microwave, such that the microwave electric field causes ionization of a gas in a vacuum vessel. (See for example Japanese Laid-Open Patent Application 9-63793). In the microwave plasma thus excited, it is possible to realize a high plasma density over a wide area right underneath the antenna, and it becomes possible to conduct uniform plasma processing in a short duration. The microwave plasma thus formed is characterized by low electron temperature, and damaging or metal contamination of the substrate is avoided. Further, it is possible to form uniform plasma over a large surface area, and it can be easily applied to the fabrication process of a semiconductor device using a large diameter semiconductor substrate or large size liquid crystal display device.
-
FIGS. 1A and 1B show the construction of a conventional microwaveplasma processing apparatus 100 having such a radial line slot antenna, whereinFIG. 1A shows the microwave plasmas processing apparatus in a cross-sectional view whileFIG. 1B shows the construction of the radial line slot antenna. - Referring to
FIG. 1A , the microwaveplasma processing apparatus 100 has aprocessing chamber 101 evacuated fromplural evacuation ports 116, and there is formed astage 115 for holding asubstrate 114 to be processed. In order to realize uniform processing in theprocessing chamber 101, a ring-shaped space 101A is formed around thestage 115, and theplural evacuation ports 116 are formed in communication with theforegoing space 101A with a uniform interval, and hence in axial symmetry with regard to the substrate. Thereby, it becomes possible to evacuate theprocessing chamber 101 uniformly through thespace 101A and theevacuation ports 116. - On the
processing chamber 101, there is formed aplate 103 of plate-like form at the location corresponding to thesubstrate 114 on thestage 115 as a part of the outer wall of theprocessing chamber 101 via aseal ring 109, wherein theshower plate 103 is formed of a dielectric material of small loss and includes a large number ofapertures 107. Further, acover plate 102 also of a dielectric material of small loss is provided on the outer side of theshower plate 103 via anotherseal ring 108. - The
shower plate 103 is formed with apassage 104 of a plasma gas on the top surface thereof, and each of theplural apertures 107 are formed in communication with the foregoingplasma gas passage 104. Further, there is formed a plasmagas supply passage 106 in the interior of theshower plate 103 in communication with a plasmagas supply port 105 provided on the outer wall of theprocessing vessel 101. Thus, the plasma gas of Ar, Kr or the like supplied to the foregoing plasmagas supply port 105 is supplied to theforegoing apertures 107 from thesupply passage 106 via thepassage 104 and is released into aspace 101B right underneath theshower plate 103 in theprocessing vessel 101 from theapertures 107 with substantially uniform concentration. - On the
processing vessel 101, there is provided a radialline slot antenna 110 having a radiation surface shown inFIG. 1B on the outer side of thecover plate 102 with a separation of 4-5 mm from thecover plate 102. The radialline slot antenna 110 is connected to an external microwave source (not shown) via acoaxial waveguide 110A and causes excitation of the plasma gas released into thespace 101B by the microwave from the microwave source. It should be noted that the gap between thecover plate 102 and the radiation surface of the radialline slot antenna 110 is filled with the air. - The radial
line slot antenna 110 is formed of a flat disk-like antenna body 110B connected to an outer waveguide of thecoaxial waveguide 110A and aradiation plate 110C is provided on the mouth of theantenna body 110B, wherein theradiation plate 110C is formed with a number ofslots 110 a andslots 110 b whereinslots 110 b are formed in a direction crossing theslots 110 a perpendicularly as represented inFIG. 1B . Further, aretardation plate 110D of a dielectric film of uniform thickness is inserted between theantenna body 110B and theradiation plate 110C. - In the radial
line slot antenna 110 of such a construction, the microwave supplied from thecoaxial waveguide 110 spreads between the disk-like antenna body 110B and theradiation plate 110C as it is propagated in the radial direction, wherein there occurs a compression of wavelength as a result of the action of theretardation plate 110D. Thus, by forming theslots radiation plate 110C. - By using such a radial
line slot antenna 110, uniform plasma is formed in thespace 101B right underneath theshower plate 103. The high-density plasma thus formed is characterized by a low electron temperature and thus, there is caused no damaging of thesubstrate 114 and there is caused no metal contamination as a result of the sputtering of the vessel wall of theprocessing vessel 101. - In the plasma processing apparatus of
FIG. 1 , it should further be noted that there is provided aconductive structure 111 in theprocessing vessel 101 between theshower plate 103 and thesubstrate 114, wherein the conductive structure is formed with a number ofnozzles 113 supplied with a processing gas from an external processing gas source (not shown) via aprocessing gas passage 112 formed in theprocessing vessel 101, and each of thenozzles 113 releases the processing gas supplied thereto into aspace 101C between theconductive structure 111 and thesubstrate 114. It should be noted that theconductive structure 111 is formed with openings betweenadjacent nozzles 113 with a size such that the plasma formed in thespace 101B passes efficiently from thespace 101B to thespace 101C by way of diffusion. - Thus, in the case a processing gas is released into the
space 101C from theconductive structure 111 via thenozzles 113, the processing gas is excited by the high-density plasma formed in thespace 101B and a uniform plasma processing is conducted on thesubstrate 114 efficiently and with high rate, without damaging the substrate or the devices on the substrate, and without contaminating the substrate. Further, it should be noted that the microwave emitted from the radial line slot antenna is blocked by the conductive structure and there is no possibility of such a microwave causes damaging in thesubstrate 114. - Meanwhile, in the
plasma processing apparatus 100 mentioned inFIGS. 1A and 1B , it is important to supply a process gas uniformly from the processgas supply part 111. Also, it is necessary that the processgas supply part 111 enable plasma excited in thespace 101B to pass to thespace 101C right above thesubstrate 114 without delay. -
FIG. 2 is a bottom view showing a construction of the conventional processgas supply part 111. - Referring to
FIG. 2 , the processgas supply part 111 is a disk-like plate formed of a stainless steel added with Al or the like. In the processgas supply part 111, there are formed a number oflarge apertures 111B disposed in a matrix form to pass high-density plasma in thespace 101B. Also, there is formed a processgas distribute passage 112A in communication with theprocess gas passage 112 along the outer circumference of the disk-like plate 111. There is formed a lattice-shaped gas passage 113A in communication with the processgas distribute passage 112A. In the lattice-shaped gas passage 113A, there are a number ofnozzle apertures 113. - According to the construction, a process gas is released almost uniformly from a number of the
nozzle apertures 113 to a surface of thesubstrate 114 to be processed represented inFIG. 2 by a broken line. On the other hand, thenozzle apertures 113 are formed toward thesubstrate 114 in the bottom view ofFIG. 2 . As a result, even if thenozzle apertures 113 are formed densely, it is difficult to diffuse the process gas enough to reach the surface of thesubstrate 114. On the other hand, if thenozzle apertures 113 are provided too densely, the process gas is mainly released on the fringe of thesubstrate 114. Accordingly, it is likely that the process gas is scarce around the center of thesubstrate 114. In addition, in theplasma processing apparatus 100, a distance between theshower plate 103 and thesubstrate 114 is shortened in order to evacuate thespaces nozzle apertures 113 cannot diffuse sufficiently because the process gas reaches thesubstrate 113 immediately. - Furthermore, the
plasma processing apparatus 100 inFIGS. 1A and 1B has the problem that the temperature thereof rises because the processgas supply part 111 is exposed to a large amount of thermal flux caused by high-density plasma. - Accordingly, it is an object of the present invention to provide a novel and useful plasma processing apparatus in which the foregoing problems are eliminated.
- Another and more specific object of the present invention is to provide a plasma processing apparatus comprising a process gas supply part capable of supplying a process gas uniformly.
- Another object of the present invention is to provide a plasma processing apparatus capable of avoiding a rise in temperature thereof.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed on the stage; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed on the stage; and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, a plurality of second apertures in communication with the process gas passage and a diffusion part provided opposite to the second aperture for diffusing process gas released from the second aperture.
- According to the present invention, in the process gas supply part, there is provided the diffusion part corresponding to a nozzle aperture releasing the process gas, thereby curving a flow of the process gas in a lateral direction and facilitating diffusion and mixture of the process gas. At the time, if the process gas supply part comprises a first part having the process gas passage and the nozzle aperture and a second part having the diffusion part, it becomes possible to form easily the diffusion part in a depression form corresponding to the nozzle aperture. When such a diffusion part is provided at both sides of a nozzle aperture to pass through plasma alternately, the diffusion part makes it possible to further curve the flow of the process gas that has been curved in the lateral direction, thereby further facilitating diffusion and mixture of the process gas. Also, the first part and the second part are formed of different members and there is provided a coolant passage in the second part. As a result, it is possible to suppress a rise in temperature of the process gas supply part.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave antenna provided on the processing vessel in correspondence to the substrate to be processed on the stage; and a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage, wherein the process gas supply part comprises a plurality of first apertures for passing through plasma formed in the interior of the processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in communication with the process gas passage, the second aperture releasing the process gas in a slanting direction with respect to the substrate to be processed.
- According to the present invention, the process gas supplied from the process gas supply part bounces on a surface of the substrate to be processed, thereby reaching a microwave window and the process gas supply part. As a result, it becomes possible to avoid the problem that deposition arises.
- Another object of the present invention is to provide a plasma processing apparatus, comprising: a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed; an evacuation system coupled to the processing vessel; a plasma gas supply part for supplying plasma gas to an interior of the processing vessel; a microwave window provided on a part of the outer wall of the processing vessel so as to face the substrate to be processed on the stage, the microwave window being formed of a dielectric material; a microwave antenna coupled to the microwave window; a process gas supply part provided between the substrate to be processed on the stage and the plasma gas supply part so as to face the substrate to be processed on the stage; and a temperature control part controlling a surface temperature of the microwave window around 150° C. with respect to a side faced on the substrate to be processed.
- According to the present invention, the temperature control of the microwave window around 150° C. suppresses formation of deposition on a surface of the microwave window.
- Other objects, features and advantages of the present invention will become more apparent from the following detailed description when read in conjunction with the accompanying drawings.
-
FIGS. 1A and 1B are diagrams showing a structure of a conventional microwave plasma processing apparatus that uses a radial line slot antenna; -
FIG. 2 is a bottom diagram showing a structure of a process gas supply mechanism of the microwave plasma processing apparatus ofFIG. 1 ; -
FIGS. 3A and 3B are diagrams showing a structure of a microwave plasma processing apparatus according to a first embodiment of the present invention; -
FIG. 4 is a perspective view showing a structure of a process gas supply mechanism of the microwave plasma processing apparatus ofFIG. 3 ; -
FIG. 5 is a bottom view showing a disk-like conductive body constituting a portion of the process gas supply mechanism inFIG. 4 ; -
FIG. 6 is a plane view showing a disk-like conductive body constituting another portion of the process gas supply mechanism inFIG. 4 ; -
FIG. 7 is a diagram explaining functions of the process gas supply mechanism inFIG. 4 ; -
FIG. 8 is an enlarged view showing a portion of the disk-like conductive body inFIG. 5 ; -
FIG. 9 is a diagram explaining functions of the disk-like conductive body inFIG. 5 ; -
FIG. 10 is a diagram showing a structure of a process gas supply mechanism according to a second embodiment of the present invention; -
FIG. 11 is a diagram showing a structure of a plasma processing apparatus according to a third embodiment of the present invention; -
FIG. 12 is a diagram showing a structure of a plasma processing apparatus according to a fourth embodiment of the present invention; -
FIG. 13 is a diagram showing a structure of a plasma processing apparatus according to a fifth embodiment of the present invention; -
FIG. 14 is a diagram showing a structure of a plasma processing apparatus according to a sixth embodiment of the present invention; -
FIG. 15 is a diagram showing a structure of a plasma processing apparatus according to a seventh embodiment of the present invention; -
FIG. 16 is a diagram showing a structure of a plasma processing apparatus according to an eighth embodiment of the present invention; and -
FIGS. 17A and 17B are diagrams showing portions of a plasma processing apparatus according to a ninth embodiment of the present invention. - Hereinafter, the present invention will be described in detail with reference to embodiments.
- [First Embodiment]
-
FIGS. 3A and 3B are diagrams showing a construction of a microwaveplasma processing apparatus 10 according to a first embodiment of the present invention. - Referring to
FIG. 3A , the microwaveplasma processing apparatus 10 includes aprocessing vessel 11 and astage 13 provided in theprocessing vessel 11 for holding asubstrate 12 to be processed by an electrostatic chuck, wherein thestage 13 is preferably formed of AlN or Al2O3 by a hot isostatic pressing (HIP) process. In theprocessing vessel 11, there are formed at least two or preferably more than or equal to threeevacuation ports 11 a in aspace 11A surrounding thestage 13 with an equal distance, and hence with an axial symmetry with respect to thesubstrate 12 on thestage 13. Theprocessing vessel 11 is evacuated to a low pressure via theevacuation port 11 a by a gradational lead screw pump to be explained later. - The
processing vessel 11 is preferably formed of an austenite stainless steel containing Al, and there is formed a protective film of aluminum oxide on the inner wall surface by an oxidizing process. Further, there is formed a disk-like shower plate 14 of dense Al2O3, formed by a HIP process, in the part of the outer wall of theprocessing vessel 11 corresponding to thesubstrate 12 as a part of the outer wall, wherein theshower plate 14 includes a large number ofnozzle apertures 14A. The Al2O3 shower plate 14 thus formed by a HIP process is formed by using an Y2O3 additive and has porosity of 0.03% or less. This means that the Al2O3 shower plate is substantially free from pores or pinholes and has a very large, while not so large as that of AlN, thermal conductivity for a ceramic of 30 W/m·K. - The
shower plate 14 is mounted on theprocessing vessel 11 via aseal ring 11 s, and acover plate 15 of dense Al2O3 formed also of an HIP process is provided on theshower plate 14 via aseal ring 11 t. Theshower plate 14 is formed with adepression 14B communicating with each of thenozzle apertures 14A and serving for the plasma gas passage, at the side thereof contacting with thecover plate 15, wherein thedepression 14B also communicates with anotherplasma gas passage 14C formed in the interior of theshower plate 14 in communication with aplasma gas inlet 11 p formed on the outer wall of theprocessing vessel 11. - The
shower plate 14 is held by an extending part lib formed on the inner wall of theprocessing vessel 11, wherein the extendingpart 11 b is formed with a round surface at the part holding theshower plate 14 so as to suppress electric discharge. - Thus, the plasma gas such as Ar or Kr supplied to the
plasma gas inlet 11 p is supplied to aspace 11 B right underneath theshower plate 14 uniformly via theapertures 14A after being passed through thepassages shower plate 14. - On the
cover plate 15, there is provided a radialline slot antenna 20 formed of a disk-like slot plate 16 formed with a number ofslots FIG. 3B in intimate contact with thecover plate 15, a disk-like antenna body 17 holding theslot plate 16, and aretardation plate 18 of a dielectric material of low loss such as Al2O3, SiO2 or Si3N4 sandwiched between theslot plate 16 and theantenna body 17. The radialline slot antenna 20 is mounted on theprocessing vessel 11 by way of aseal ring 11 u, and a microwave of 2.45 GHz or 8.3 GHz frequency is fed to the radialline slot antenna 20 from an external microwave source (not shown) via acoaxial waveguide 21. The microwave thus supplied is radiated into the interior of the processing vessel from theslots slot plate 16 via thecover plate 15 and theshower plate 14. Thereby, the microwave causes excitation of plasma in the plasma gas supplied from theapertures 14A in thespace 11B right underneath theshower plate 14. It should be noted that thecover plate 15 and theshower plate 14 are formed of Al2O3 and function as an efficient microwave-transmitting window. In order to avoid plasma excitation in theplasma gas passages 14A-14C, the plasma gas is held at the pressure of about 6666 Pa-13332 Pa (about 50-100 Torr) in the foregoingpassages 14A-14C. - In order to improve intimate contact between the radial
line slot antenna 20 and thecover plate 15, the microwaveplasma processing apparatus 10 of the present embodiment has a ring-shaped groove 15 g on a part of theprocessing vessel 11 so as to engage with theslot plate 16. By evacuating the groove 15 g via anevacuation port 11G communicating therewith, the pressure in the gap formed between theslot plate 16 and thecover plate 15 is reduced and the radialline slot antenna 20 is urged firmly upon thecover plate 15 by the atmospheric pressure. It should be noted that such a gap includes not only theslots slot plate 16 but also a gap formed by other various reasons. It should be noted further that such a gap is sealed by theseal ring 11 u provided between the radialline slot antenna 20 and theprocessing vessel 11. - By filling the gap between the
slot plate 16 and thecover plate 15 with an inert gas of small molecular weight via theevacuation port 11G and thegroove 11 g, heat transfer from thecover plate 15 to theslot plate 16 is facilitated. Thereby, it is preferable to use He for such an inert gas in view of large thermal conductivity and large ionization energy. In the case the gap is filled with He, it is preferable to set the pressure to about 0.8 atm. In the construction ofFIG. 3 , there is provided avalve 11V on theevacuation port 11 G for the evacuation of thegroove 11 g and filling of the inert gas into thegroove 11 g. - It should be noted that an
outer waveguide tube 21A of thecoaxial waveguide 21A is connected to the disk-like antenna body 17 while acentral conductor 21B is connected to theslot plate 16 via an opening formed in theretardation plate 18. Thus, the microwave fed to thecoaxial waveguide 21A is propagated in the radial direction between theantenna body 17 and theslot plate 16 and is emitted from theslots -
FIG. 3B shows theslots slot plate 16. - Referring to
FIG. 3B , theslots 16 a are arranged in a concentric manner such that there is provided aslot 16 b for eachslot 16 a such that theslot 16 b crosses theslot 16 a perpendicularly and such that theslot 16 b is aligned concentrically with theslot 16 a. Theslots radiation plate 16 in the radial direction of theslot plate 16, and as a result, the microwave is radiated from theslot plate 16 in the form of a near plane wave. Because theslots 16 a and theslots 16 b are formed in the mutually perpendicular relationship, the microwave thus radiated forms a circularly polarized wave including two perpendicular polarization components. - In the
plasma processing apparatus 10 ofFIG. 3A , there is provided acoolant block 19 formed with acoolant water passage 19A on theantenna body 17, and the heat accumulated in theshower plate 14 is absorbed via the radialline slot antenna 20 by cooling thecoolant block 19 by the coolant water in thecoolant water passage 19A. Thecoolant water passage 19A is formed on thecoolant block 19 in a spiral form, and coolant water having a controlled oxidation-reduction potential is supplied thereto, wherein the control of the oxidation reduction potential is achieved by eliminating oxygen dissolved in the coolant water by way of bubbling of an H2 gas. - In the microwave
plasma processing apparatus 10 ofFIG. 3A , there is further provided a processgas supply mechanism 31 in theprocessing vessel 11 between theshower plate 14 and thesubstrate 12 on thestage 13, wherein the processgas supply mechanism 31 hasgas passages 31A arranged in a lattice shape and releases a process gas supplied from a processgas inlet port 11 r provided on the outer wall of theprocessing vessel 11 through a large number of process gas nozzle apertures. Thereby, desired uniform substrate processing is achieved in aspace 11C between the processgas supply structure 31 and thesubstrate 12. Such substrate processing includes plasma oxidation processing, plasma nitridation processing, plasma oxynitridation processing, and plasma CVD processing. Further, it is possible to conduct a reactive ion etching of thesubstrate 12 by supplying a readily decomposing fluorocarbon gas such as C4F8, C5F8 or C4F6 or an etching gas containing F or Cl and further by applying a high-frequency voltage to thestage 13 from a high-frequency power source 13A. - In the microwave
plasma processing apparatus 10 of the present embodiment, it is possible to avoid deposition of reaction byproducts on the inner wall of the processing vessel by heating the outer wall of theprocessing vessel 11 to a temperature of about 150° C. Thereby, the microwaveplasma processing apparatus 10 can be operated constantly and with reliability, by merely conducing a dry cleaning process once a day or so. -
FIG. 4 is a bottom view showing a structure of the processgas supply mechanism 31 ofFIG. 3A . - Referring to
FIG. 4 , the processgas supply mechanism 31 is formed in a stack of disk-likeconductive members apertures 31A disposed in a matrix form to serve for a plasma gas passage. For example, theaperture 31A has a size of 19 mm×19 mm and is provided iteratively at a pitch of 24 mm both in the row direction and in the column direction. The processgas supply mechanism 31 has a total thickness of about 8.5 mm and is typically mounted with a separation of about 16 mm from the surface of thesubstrate 12. -
FIG. 5 is a bottom diagram showing a structure of the disk-likeconductive member 31 1 inFIG. 4 . - Referring to
FIG. 5 , in the disk-likeconductive member 31 1, there is provided a lattice-shapedprocess gas passage 31B in communication with the processgas supply passage 31C formed along an outer circumference of the disk-likeconductive member 31 1 represented by a broken line inFIG. 5 . The processgas supply passage 31C is connected to the processgas inlet port 11 r. In the opposite surface of the disk-likeconductive member 31 1, there are formed a large number of processgas nozzle apertures 31D in communication with theprocess gas passage 31B. The process gas is released from the processgas nozzle apertures 31D to the disk-likeconductive member 31 2. -
FIG. 6 is a plane view showing a structure of the disk-likeconductive member 31 2. - Referring to
FIG. 6 , in the disk-likeconductive member 31 2, there are formedprocess gas apertures 31A′ disposed in a matrix form corresponding to theprocess gas apertures 31A in the disk-likeconductive member 31 1. Theprocess gas apertures 31A′ are defined by a lattice-shapedstructure 31E in the disk-likeconductive member 31 2. - As shown in
FIG. 6 , in the lattice-shapedstructure 31, there are formeddepressions 31F of a typical depth of about 1 mm for each of the processgas nozzle apertures 31D in the disk-likeconductive member 31 1, wherein thedepression 31F prevents a process gas released from the processgas nozzle apertures 31D from going straight, whereby a flow of the process gas flows is curved as shown inFIG. 7 . Thus, thedepression 31F is provided as a diffusion part. Here,FIG. 7 is a sectional view of a portion of the processgas supply mechanism 31 inFIG. 4 , wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. -
FIG. 8 is an enlarging view showing a portion of the disk-likeconductive member 31 2 inFIG. 6 . - Referring to
FIG. 8 , around theprocess gas apertures 31A′, there are formeddepressions 31F1 through 31F4 as adiffusion part 31F, wherein a pair of depressions being mutually faced with respect to theprocess gas aperture 31A′, for example, a pair of thedepressions depressions - As a result, as shown in
FIG. 9 , a flow of a process gas curved laterally by thedepression 31F1 hits aportion 31E2 of the lattice-shapedstructure 31E in which thedepression 31F2 is not formed, thereby curving. - Similarly, a flow of a process gas curved laterally by the
depression 31F2 hits aportion 31E1 of the lattice-shapedstructure 31E in which thedepression 31F1 is not formed, thereby curving. A flow of a process gas curved laterally by thedepression 31F3 hits aportion 31E4 of the lattice-shapedstructure 31E in which thedepression 31F4 is not formed, thereby curving. A flow of a process gas curved laterally by thedepression 31F4 hits aportion 31E3 of the lattice-shapedstructure 31E in which thedepression 31F3 is not formed, thereby curving. - As a result of complicated curved flows of the process gas shown in
FIG. 9 , the flows of the process gas diffuse uniformly and are supplied to thespace 11C. - The lattice-shaped
process gas passage 31B and the processgas nozzle apertures 31D are provided to cover a slightly larger range than thesubstrate 12 represented by a broken line inFIG. 5 . There is provided such a processgas supply mechanism 31 between theshower plate 14 and thesubstrate 12, thereby exciting plasma for the process gas. The plasma-excited process gas makes it possible to perform a uniform process. - In a case that the process
gas supply mechanism 31 is formed of a conductive material such as metal, an iterated pitch of the lattice-shaped process gas apertures is set shorter than a wavelength of the foregoing microwave, whereby the processgas supply mechanism 31 forms a surface of short circuit of the microwave. In this case, microwave excitation of plasma occurs only in thespace 11B and a process gas is activated in thespace 11C including a surface of thesubstrate 12 by plasma diffusing from theexcited space 11B. - The microwave
plasma processing apparatus 10 according to this embodiment of the present invention uses the processgas supply mechanism 31 to control the uniform supply of a process gas, thereby eliminating an excessive amount of dissociation of the process gas on the surface of thesubstrate 12. Even if there is formed a structure of a large aspect ratio on the surface of thesubstrate 12, it is possible to process a desirable substrate as far as an inner portion of such an aspect structure. Thus, the microwaveplasma processing apparatus 10 is useful for fabricating a plurality of generations of semiconductor apparatuses differing in designing rules. - In the
plasma processing apparatus 10 according to this embodiment of the present invention, the disk-likeconductive members conductive members plasma processing apparatus 10 according to the present invention, incident energy is small because of a low electron temperature in the excited plasma, thereby avoiding the problem that metal contamination occurs to thesubstrate 12 by sputtering of the processgas supply mechanism 31. It should be noted that the process.gas supply mechanism 31 may be formed of a ceramic such as alumina. - Also, in this embodiment of the present invention, it is possible that either of the disk-like
conductive members - [Second Embodiment]
-
FIG. 10 shows a structure of a processgas supply mechanism 41 according to a second embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 10 , in this embodiment, there is formed acoolant passage 31 e in the lattice-shapedstructure 31E of the disk-likeconductive member 31 2, thereby suppressing an excessive rise of temperature in the processgas supply mechanism 41. - In
FIG. 10 , there are additionally formed L-shaped spacers 31L1 through 31L4 on the lattice-shapedstructure 31E, wherein thedepressions 31F1 through 31F4 are defined by the spacers 31L1 through 31L4. - The structure of
FIG. 10 is easy to construct. As a result, it is possible to decrease manufacturing cost of the plasma processing apparatus. - [Third Embodiment]
-
FIG. 11 shows a structure of aplasma processing apparatus 10A according to a third embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 11 , in theplasma processing apparatus 10A, the foregoingshower plate 14 is removed and there are instead formed a plurality of plasmagas supply pipes 11P in theprocess vessel 11 in communication with agas passage 11 p, preferably with symmetry. In theplasma processing apparatus 10A according to this embodiment of the present invention, it is possible to simplify the structure thereof and decrease the manufacturing cost thereof. - Also in such a
plasma processing apparatus 10A, it is possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, by using the processgas supply mechanism 41, it becomes possible to avoid an excessive rise in temperature in the process gas supply mechanism. - [Fourth Embodiment]
-
FIG. 12 shows aplasma processing apparatus 10B according to a fourth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 12 , in theplasma processing apparatus 10B according to this embodiment of the present invention, there is formed a taper part at a connecting part between thecoaxial waveguide 21 and the radialline slot antenna 20 in the plasma processing apparatus shown inFIGS. 3A and 3B , thereby decreasing rapid change of impedance in the connecting part and the reflection of microwave thereof. For these purposes, there is formed ataper part 21 b at an edge of a centralconductive body 21B in thecoaxial waveguide 21 and ataper part 21 a at a connecting part between acoaxial waveguide 21A and anantenna body 17. - Also in such a
plasma processing apparatus 10B, it is possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, it becomes possible to avoid an excessive rise in temperature in the process gas supply mechanism by using the processgas supply mechanism 41. - [Fifth Embodiment]
-
FIG. 13 shows aplasma processing apparatus 10C according to a fifth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 13 , in theplasma processing apparatus 10C, the foregoingshower plate 14 is removed from theplasma processing apparatus 10B inFIG. 12 and there are formed a plurality of plasmagas supply pipes 11P in theprocess vessel 11 in communication with thegas passage 11 p, preferably with symmetry. In theplasma processing apparatus 10A according to this embodiment of the present invention, there is formed a taper part at a connecting part between thecoaxial waveguide 21 and the radialline slot antenna 20, thereby suppressing reflection of microwave caused by rapid change of impedance. Additionally, it becomes possible to simplify the structure thereof by providing the plasmagas supply pipes 11 p instead of theshower plate 14 and decrease considerably manufacturing cost of the plasma processing apparatus. - Also in such a
plasma processing apparatus 10C, it becomes possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, it becomes possible to avoid an excessive rise in temperature in the process gas supply mechanism by using the processgas supply mechanism 41. - [Sixth Embodiment]
-
FIG. 14 shows a structure of aplasma processing apparatus 10D according to a fourth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 14 , in theplasma processing apparatus 10D according to this embodiment of the present invention, there is provided theretardation plate 18 between theedge 21 b of the centralconductive body 21B of thecoaxial waveguide 21 and theslot plate 16, wherein theretardation plate 18 is detached from theslot plate 16. In such aplasma processing apparatus 10D, it is not necessary to screw theedge 21 b of the centralconductive body 21B on theslot plate 16, whereby a surface of theslot plate 16 becomes definitely flat. As a result, it is possible to contact the radialline slot antenna 20 with thecover plate 15 with high precision and suppress efficiently a rise in temperature of theshower plate 14 and thecover plate 15 by cooling the radialline slot antenna 20. - In such a
plasma processing apparatus 10D, it is possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, it becomes possible to avoid an excessive rise in temperature in the process gas supply mechanism by using the processgas supply mechanism 41. - [Seventh Embodiment]
-
FIG. 15 shows a structure of aplasma processing apparatus 10E according to a seventh embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 15 , in theplasma processing apparatus 10E, theshower plate 14 is removed from theplasma processing apparatus 10D inFIG. 14 , and there are formed a plurality of plasmagas supply pipes 11P in theprocess vessel 11 in communication with thegas passage 11 p, preferably with symmetry. As a result, in theplasma processing apparatus 10E, it is possible to make the structure thereof simpler than that of theplasma processing apparatus 10D and decrease considerably manufacturing cost of the plasma processing apparatus. - In such a
plasma processing apparatus 10E, it is possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, it becomes possible to avoid an excessive rise in temperature in the process gas supply mechanism by using the processgas supply mechanism 41. - [Eighth Embodiment]
-
FIG. 16 shows a structure of aplasma processing apparatus 10F according to an eighth embodiment of the present invention, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 16 , in theplasma processing apparatus 10F, thecover plate 15 is removed from theplasma processing apparatus 10E and theslot plate 16 of the radialline slot antenna 20 is exposed to the interior of theprocessing vessel 11. - In such a
plasma processing apparatus 10F, although theslot plate 16 is mounted on theprocessing vessel 11 via the seal ring lit, it is not necessary to provide a seal ring to seal theedge 21 b of the centralconductive body 21B toward an air pressure because theedge 21 b of the centralconductive body 21B is formed behind theretardation plate 18. According to this embodiment of the present invention, it becomes possible to excite efficiently microwave in theprocessing vessel 11 without loss of the microwave because theslot plate 16 of the radialline slot antenna 20 is exposed to the interior of theprocessing vessel 11. - Also in such a
plasma processing apparatus 10F, it is possible to supply a process gas to thespace 11C on thesubstrate 12 uniformly and with reliability by using the processgas supply mechanism FIG. 4 . Especially, it becomes possible to avoid an excessive rise in temperature in the process gas supply-mechanism by using the processgas supply mechanism 41. - [Ninth Embodiment]
-
FIGS. 17A and 17B are a bottom view and a sectional view showing a structure of the processgas supply mechanism 51 according to a ninth embodiment of the present invention, respectively, wherein those parts explained previously are designated by the same reference numerals and the description thereof will be omitted. - Referring to
FIG. 17A , according to this embodiment of the present invention, the processgas supply mechanism 31 includes aspoke part 51B that is provided as a process gas passage and is extended in the radial direction and a concentric ring-shapedpart 51A that is formed as a process gas passage and is held by thespoke part 51B, wherein there are formed a large number of process gassupply nozzle apertures 51C on a bottom surface of the concentric ring-shapedpart 51A. - Referring to
FIG. 17B , according to this embodiment of the present invention, the process gassupply nozzle apertures 51C are formed with a slant and releases a process gas in a slanting direction with respect to thesubstrate 12. - When the process gas is released in the slanting direction from the process gas
supply nozzle apertures 51C to thesubstrate 12, the released process gas bounces off thesubstrate 12, thereby avoiding the problem that there is formed deposition of reaction byproducts on a surface of theshower plate 103. - As shown in
FIG. 17B , the concentric ring-shapedpart 51A has a structure such that a section in which there are formed grooves corresponding to process gas supply passages covers a surface of aU-shaped part 51 a with alid 51 b. As a result, the processgas nozzle apertures 51C can be formed by a slanting processing of theU-shaped part 51 a. - [Tenth Embodiment]
- A description will be given of a tenth embodiment of the present invention.
- According to this embodiment of the present invention, in order to suppress the deposition of reaction byproducts on the surface of the
shower plate 103, the foregoingcoolant block 19 serves as a temperature control apparatus under asubstrate processing apparatus 10 inFIG. 3A , asubstrate processing apparatus 10A inFIG. 11 , asubstrate processing apparatus 10B inFIG. 12 , asubstrate processing apparatus 10C inFIG. 13 , asubstrate processing apparatus 10D inFIG. 14 or asubstrate processing apparatus 10E inFIG. 15 , wherein thecoolant block 19 controls a surface temperature of theshower plate 13 or thecover plate 15 with respect to the side faced on thesubstrate 12 around 150° C. via the radialline slot antenna 20. At the time, a process gas supply mechanism shown inFIGS. 17A and 17B may be used. - As a result of the temperature control of the
shower plate 13 or thecover plate 15 around 150° C., even if CVD coating process or plasma etching process is performed in theprocessing space 11C, it becomes possible to suppress deposition on the surface of theshower plate 13 or thecover plate 15. - On the other hand, when the foregoing temperature is substantially above 150° C., it is likely that process gas supplied from the process
gas supply mechanism shower plate 13 or thecover plate 15 less than 150° C. - By letting a medium such as galden in a
coolant passage 19A of thecoolant block 19, it is possible to control the temperature. - Further, the present invention is not limited to the specific embodiments noted above but various variations and modifications may be made within the scope of the invention set forth in claims.
- According to the present invention, in a microwave plasma processing apparatus, it is possible to supply a process gas to an interior of a processing vessel uniformly and perform a uniform plasma process.
- Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (6)
1-17. (canceled)
18. A plasma processing apparatus, comprising:
a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;
an evacuation system coupled to said processing vessel;
a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;
a microwave antenna provided on said processing vessel; and
a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage,
wherein said process gas supply part comprises:
a first component comprising a plurality of first apertures configured to provide flow communication for passing plasma formed in the interior of said processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in flow communication with said process gas passage; and
a second component comprising a plurality of third apertures corresponding to and being in substantially axial alignment with said first apertures of said first component and a plurality of diffusion surfaces upon recessed areas of said second component positioned opposite to said second apertures in said first component,
wherein said first component and said second component comprise a first member and a second member, respectively, and a coolant passage is provided in said second member.
19. A plasma processing apparatus, comprising:
a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;
an evacuation system coupled to said processing vessel;
a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;
a microwave antenna provided on said processing vessel in correspondence to said substrate to be processed on said stage; and
a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage,
wherein said process gas supply part comprises:
a first component comprising a plurality of first apertures configured to provide flow communication for passing plasma formed in the interior of said processing vessel, a process gas passage capable of connecting to a process gas source, and a plurality of second apertures in flow communication with said process gas passage; and
a second component comprising a plurality of third apertures corresponding to and being in substantially axial alignment with said first apertures of said first component and a plurality of diffusion surfaces upon recessed areas of said second component positioned opposite to said second apertures in said first component,
wherein said plurality of second aperture are configured to release said process gas in a slanting direction.
20. A plasma processing apparatus, comprising:
a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;
an evacuation system coupled to said processing vessel; a plasma gas supply part for supplying plasma gas to an interior of said processing vessel;
a microwave window formed of a dielectric material and provided on a part of said outer wall of said processing vessel so as to face said substrate to be processed on said stage and;
a microwave antenna coupled to said microwave window;
a process gas supply part provided between said substrate to be processed on said stage and said plasma gas supply part so as to face said substrate to be processed on said stage; and
a temperature control part controlling a surface temperature of said microwave window around 150° C. with respect to a side faced on said substrate to be processed on said stage.
21. The microwave plasma processing apparatus as claimed in claim 20 , wherein said temperature control part is provided on said microwave antenna and controls a temperature of said microwave window via said microwave antenna.
22. The microwave plasma processing apparatus as claimed in claim 20 , wherein said microwave window is a shower plate formed of a dielectric plate forming said plasma gas supply part.
Priority Applications (1)
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PCT/JP2002/003108 WO2002080249A1 (en) | 2001-03-28 | 2002-03-28 | Plasma processing device |
US11/488,059 US20060289116A1 (en) | 2001-03-28 | 2006-07-18 | Plasma processing apparatus |
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PCT/JP2002/003108 Division WO2002080249A1 (en) | 2001-03-28 | 2002-03-28 | Plasma processing device |
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EP (2) | EP1804274A3 (en) |
JP (1) | JP4012466B2 (en) |
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CN (1) | CN1229855C (en) |
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US20100170438A1 (en) * | 2007-06-06 | 2010-07-08 | Victor Saywell | Gas distributor comprising a plurality of diffusion-welded panes and a method for the production of such a gas distributor |
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Also Published As
Publication number | Publication date |
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EP1804274A3 (en) | 2007-07-18 |
JP4012466B2 (en) | 2007-11-21 |
CN1229855C (en) | 2005-11-30 |
CN1460286A (en) | 2003-12-03 |
EP1300876A4 (en) | 2005-12-07 |
IL153154A (en) | 2007-03-08 |
KR100501778B1 (en) | 2005-07-20 |
JPWO2002080249A1 (en) | 2004-07-22 |
EP1300876A1 (en) | 2003-04-09 |
IL153154A0 (en) | 2003-06-24 |
KR20030004427A (en) | 2003-01-14 |
US7115184B2 (en) | 2006-10-03 |
US20030178144A1 (en) | 2003-09-25 |
EP1804274A2 (en) | 2007-07-04 |
WO2002080249A1 (en) | 2002-10-10 |
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