US20070164376A1 - Method for edge sealing barrier films - Google Patents

Method for edge sealing barrier films Download PDF

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Publication number
US20070164376A1
US20070164376A1 US11/693,022 US69302207A US2007164376A1 US 20070164376 A1 US20070164376 A1 US 20070164376A1 US 69302207 A US69302207 A US 69302207A US 2007164376 A1 US2007164376 A1 US 2007164376A1
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Prior art keywords
barrier
layer
sensitive device
edge
sealed
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US11/693,022
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US7727601B2 (en
Inventor
Paul Burrows
Eric Mast
Peter Martin
Gordon Graff
Mark Gross
Charles Bonham
Wendy Bennett
Michael Hall
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Samsung Display Co Ltd
Original Assignee
Burrows Paul E
Mast Eric S
Martin Peter M
Graff Gordon L
Gross Mark E
Bonham Charles C
Bennett Wendy D
Hall Michael G
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Priority claimed from US09/427,138 external-priority patent/US6522067B1/en
Priority claimed from US09/966,163 external-priority patent/US6866901B2/en
Application filed by Burrows Paul E, Mast Eric S, Martin Peter M, Graff Gordon L, Gross Mark E, Bonham Charles C, Bennett Wendy D, Hall Michael G filed Critical Burrows Paul E
Priority to US11/693,022 priority Critical patent/US7727601B2/en
Publication of US20070164376A1 publication Critical patent/US20070164376A1/en
Priority to US12/345,912 priority patent/US20090208754A1/en
Priority to US12/345,787 priority patent/US20090191342A1/en
Priority to US12/758,244 priority patent/US20100193468A1/en
Publication of US7727601B2 publication Critical patent/US7727601B2/en
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Assigned to SAMSUNG MOBILE DISPLAY CO., LTD. reassignment SAMSUNG MOBILE DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: VITEX SYSTEMS, INC.
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG MOBILE DISPLAY CO., LTD.
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/564Details not otherwise provided for, e.g. protection against moisture
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • H10K59/8731Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/05Bonding or intermediate layer characterised by chemical composition, e.g. sealant or spacer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133337Layers preventing ion diffusion, e.g. by ion absorption
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor

Definitions

  • the invention relates generally to multilayer, thin film barrier composites, and more particularly, to multilayer, thin film barrier composites having the edges sealed against lateral moisture and gas diffusion.
  • Multilayer, thin film barrier composites having alternating layers of barrier material and polymer material are known. These composites are typically formed by depositing alternating layers of barrier material and polymer material, such as by vapor deposition. If the polymer layers are deposited over the entire surface of the substrate, then the edges of the polymer layers are exposed to oxygen, moisture, and other contaminants. This potentially allows the moisture, oxygen, or other contaminants to diffuse laterally into an encapsulated environmentally sensitive device from the edge of the composite, as shown in FIG. 1 .
  • the multilayer, thin film barrier composite 100 includes a substrate 105 and alternating layers of decoupling material 110 and barrier material 115 . The scale of FIG. 1 is greatly expanded in the vertical direction.
  • the area of the substrate 105 will typically vary from a few square centimeters to several square meters.
  • the barrier layers 115 are typically a few hundred Angstroms thick, while the decoupling layers 110 are generally less than ten microns thick.
  • the lateral diffusion rate of moisture and oxygen is finite, and this will eventually compromise the encapsulation.
  • One way to reduce the problem of edge diffusion is to provide long edge diffusion paths. However, this decreases the area of the substrate which is usable for active environmentally sensitive devices. In addition, it only lessens the problem, but does not eliminate it.
  • a similar edge diffusion problem will arise when a substrate containing a multilayer, thin film barrier composite is scribed and separated to create individual components.
  • the present invention solves this need by providing an edge-sealed, encapsulated environmentally sensitive device.
  • the edge-sealed, environmentally sensitive device includes at least one initial barrier stack comprising at least one decoupling layer and at least one barrier layer.
  • a first decoupling layer of a first initial barrier stack has an area and a first barrier layer of the first initial barrier stack has an area, the area of the first barrier layer of the first initial barrier stack being greater than the area of the first decoupling layer of the first initial barrier stack.
  • the first barrier layer of the first initial barrier stack is in contact with a third barrier layer or an optional substrate, sealing the first decoupling layer of the first initial barrier stack between the first barrier layer of the first initial barrier stack and the third barrier layer or the optional substrate.
  • An environmentally sensitive device is adjacent to the at least one initial barrier stack.
  • At least one additional barrier stack is adjacent to the environmentally sensitive device on a side opposite the at least one initial barrier stack.
  • the at least one additional barrier stack comprises at least one decoupling layer and at least one barrier layer.
  • a first decoupling layer of a first additional barrier stack has an area and a first barrier layer of the first additional barrier stack has an area, the area of the first barrier layer of the first additional barrier stack being greater than the area of the first decoupling layer of the first additional barrier stack.
  • the first barrier layer of the first additional barrier stack is in contact with a fourth barrier layer, sealing the first decoupling layer of the first additional barrier stack between the first barrier layer of the first additional barrier stack and the fourth barrier layer.
  • At least one barrier layer of at least one initial barrier stack is in contact with at least one barrier layer of at least one additional barrier stack, sealing the environmentally sensitive device between the at least one initial barrier stack and the at least one additional barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m 2 /day at 23° C. and 0% relative humidity.
  • Another aspect of the invention is a method of making an edge-sealed, encapsulated environmentally sensitive device.
  • the method includes providing at least one initial barrier stack, the at least one initial barrier stack comprising at least one decoupling layer and at least one barrier layer, wherein a first decoupling layer of a first initial barrier stack has an area and wherein a first barrier layer of the first initial barrier stack has an area, the area of the first barrier layer of the first initial barrier stack being greater than the area of the first decoupling layer of the first initial barrier stack, and wherein the first barrier layer of the first initial barrier stack is in contact with a third barrier layer or an optional substrate, sealing the first decoupling layer of the first initial barrier stack between the first barrier layer of the first initial barrier stack and the third barrier layer or the optional substrate; placing an environmentally sensitive device adjacent to the at least one initial barrier stack; and placing at least one additional barrier stack adjacent to the environmentally sensitive device on a side opposite the at least one initial barrier stack, the at least one additional barrier stack comprising at least one decoupling layer and at least
  • FIG. 1 is a cross-section of a barrier composite of the prior art.
  • FIG. 2 is a cross-section of one embodiment of an edge-sealed, encapsulated environmentally sensitive device of the present invention.
  • FIG. 3 shows a successful barrier layer without a seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 4 shows a successful edge seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 5 shows a failed edge seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 6 shows a cross-section of one embodiment of a substrate and mask arrangement and a plan view of the resulting seal.
  • FIG. 7 shows a cross-section of another embodiment of a substrate and mask arrangement and a plan view of the resulting seal.
  • FIG. 2 shows an edge-sealed, encapsulated environmentally sensitive device 400 .
  • a substrate 405 which can be removed after the device is made, if desired.
  • the environmentally sensitive device 430 is encapsulated between initial barrier stack 422 on one side and additional barrier stack 440 on the other side.
  • the environmentally sensitive device can be any device requiring protection from moisture, gas, or other contaminants.
  • Environmentally sensitive devices include, but are not limited to, organic light emitting devices, liquid crystal displays, displays using electrophoretic inks, light emitting diodes, light emitting polymers, electroluminescent devices, phosphorescent devices, organic solar cells, inorganic solar cells, thin film batteries, and thin film devices with vias, and combinations thereof.
  • the substrate which is optional, can be any suitable substrate, and can be either rigid or flexible.
  • Suitable substrates include, but are not limited to: polymers, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or high temperature polymers, such as polyether sulfone (PES), polyimides, or TransphanTM (a high glass transition temperature cyclic olefin polymer available from Lofo High Tech Film, GMBH of Weil am Rhein, Germany); metals and metal foils; paper; fabric; glass, including thin, flexible, glass sheet (for example, flexible glass sheet available from Corning Inc. under the glass code 0211. This particular thin, flexible glass sheet has a thickness of less than 0.6 mm and will bend at a radium of about 8 inches.); ceramics; semiconductors; silicon; and combinations thereof.
  • Barrier stack 420 has a barrier layer 415 which has an area greater than the area of the decoupling layer 410 which seals the decoupling layer 410 within the area of the barrier layer 415 .
  • Barrier stack 422 has two barrier layers 415 , 417 and two decoupling layers 410 , 412 .
  • Barrier layer 415 has an area greater than that of the decoupling layers 410 , 412 which seals the decoupling layers 410 , 412 within the area of the barrier layer 415 .
  • Barrier stack 440 includes two decoupling layers 410 and two barrier layers 415 which may be of approximately the same size. Barrier stack 440 also includes barrier layer 435 which has an area greater than the area of the decoupling layers 410 which seals the decoupling layers 410 within the area of barrier layer 435 .
  • the barrier layers It is not required that all of the barrier layers have an area greater than all of the decoupling layers, but at least one of the barrier layers must have an area greater than at least one of the decoupling layers. If not all of the barrier layers have an area greater than of the decoupling layers, the barrier layers which do have an area greater than the decoupling layers should form a seal around those which do not so that there are no exposed decoupling layers within the barrier composite, although, clearly it is a matter of degree. The fewer the edge areas of decoupling layers exposed, the less the edge diffusion. If some diffusion is acceptable, then a complete barrier is not required.
  • the barrier stacks of the present invention on polymeric substrates, such as PET, have measured oxygen transmission rate (OTR) and water vapor transmission rate (WVTR) values well below the detection limits of current industrial instrumentation used for permeation measurements (Mocon Ox Tran 2/20L and Permatran).
  • Table 1 shows the OTR and WVTR values (measured according to ASTM F 1927-98 and ASTM F 1249-90, respectively) measured at Mocon (Minneapolis, Minn.) for several barrier stacks on 7 mil PET, along with reported values for other materials.
  • OTR oxygen transmission rate
  • WVTR water vapor transmission rate
  • the barrier stacks of the present invention provide oxygen and water vapor permeation rates several orders of magnitude better than PET coated with aluminum, silicon oxide, or aluminum oxide.
  • Typical oxygen permeation rates for other barrier coatings range from about 1 to about 0.1 cc/m 2 /day.
  • the oxygen transmission rate for the barrier stacks of the present invention is less than 0.005 cc/m 2 /day at 23° C. and 0% relative humidity, and at 38° C. and 90% relative humidity.
  • the water vapor transmission rate is less than 0.005 g/m 2 /day at 38° C. and 100% relative humidity. The actual transmission rates are lower, but cannot be measured with existing equipment.
  • a good edge seal should be no more permeable than the overall barrier layer. This should result in failure at the edges occurring at a rate statistically the same as that observed anywhere else. In practice, the areas closest to the edge show failure first, and the inference is that edge failure is involved.
  • the Mocon test for the barrier layers requires significant surface area, and cannot be used to test the edge seal directly.
  • a test using a layer of calcium was developed to measure barrier properties.
  • the calcium test is described in Nisato et al., “Thin Film Encapsulation for OLEDs: Evaluation of Multi-layer Barriers using the Ca Test,” SID 03 Digest, 2003, p. 550-553, which is incorporated herein by reference.
  • the calcium test can be used to evaluate edge seal performance for both oxygen transmission rate and water vapor transmission rate. An encapsulated device is made, and the edges are observed for degradation in response to permeation by oxygen and water. The determination is qualitative: pass/fail. Failure is noted at the edges, and the failure progresses inwards from the edges over time.
  • An edge seal which passes the calcium test has an oxygen transmission rate for the edge seal of less than 0.005 cc/m 2 /day at 23° C. and 0% relative humidity, and at 38° C. and 90% relative humidity. It would also have a water vapor transmission rate of less than 0.005 g/m 2 /day at 38° C. and 100% relative humidity.
  • FIGS. 3-5 show results from calcium tests after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 3 shows a successful barrier layer without a seal. The edge of the barrier layer is more than 50 mm from the calcium edge.
  • FIG. 4 shows a successful edge seal. The edge of the barrier layer is 3 mm from the calcium edge, and no degradation is observed.
  • FIG. 5 shows an edge seal which failed. The edge of the barrier layer is 3 mm from the calcium edge, and severe degradation can be seen.
  • barrier stacks are not limited. The number of barrier stacks needed depends on the substrate material used and the level of permeation resistance needed for the particular application. One or two barrier stacks may provide sufficient barrier properties for some applications. The most stringent applications may require five or more barrier stacks.
  • the barrier stacks can have one or more decoupling layers and one or more barrier layers. There could be one decoupling layer and one barrier layer, there could be one or more decoupling layers on one side of one or more barrier layers, there could be one or more decoupling layers on both sides of one or more barrier layers, or there could be one or more barrier layers on both sides of one or more decoupling layers.
  • the important feature is that the barrier stack have at least one decoupling layer and at least one barrier layer.
  • the barrier layers in the barrier stacks can be made of the same material or of a different material, as can the decoupling layers.
  • the barrier layers are typically about 100-400 ⁇ thick, and the decoupling layers are typically about 1000-10,000 ⁇ thick.
  • the barrier stacks can have the same or different layers, and the layers can be in the same or different sequences.
  • the decoupling layer must be first in order for the barrier layer to seal it.
  • the decoupling layer will be sealed between the substrate (or the upper layer of the previous barrier stack) and the barrier layer.
  • a device can be made with a single barrier stack having one decoupling layer and one barrier layer on each side of the environmentally sensitive device, there will typically be at least two barrier stacks on each side, each stack having one (or more) decoupling layer and one (or more) barrier layer.
  • the first layer in the stack can be either a decoupling layer or a barrier layer, as can the last layer.
  • the barrier layer which seals the decoupling layer may be the first barrier layer in the barrier stack, as shown in barrier stack 420 . It may also be a second (or later) barrier layer as shown in barrier stack 440 . Barrier layer 435 which seals the barrier stack 440 is the third barrier layer in the barrier stack following two barrier layers 415 which do not seal the barrier stack.
  • first decoupling layer and first barrier layer in the claims does not refer to the actual sequence of layers, but to layers which meet the limitations.
  • first initial barrier stack and first additional barrier stack do not refer to the actual sequence of the initial and additional barrier stacks.
  • the decoupling layers may be made from the same decoupling material or different decoupling material.
  • the decoupling layer can be made of any suitable decoupling material, including, but not limited to, organic polymers, inorganic polymers, organometallic polymers, hybrid organic/inorganic polymer systems, silicates, and combinations thereof.
  • Organic polymers include, but are not limited to, urethanes, polyamides, polyimides, polybutylenes, isobutylene isoprene, polyolefins, epoxies, parylenes, benzocyclobutadiene, polynorbornenes, polyarylethers, polycarbonates, alkyds, polyaniline, ethylene vinyl acetate, ethylene acrylic acid, and combinations thereof.
  • Inorganic polymers include, but are not limited to, silicones, polyphosphazenes, polysilazanes, polycarbosilanes, polycarboranes, carborane siloxanes, polysilanes, phosphonitriles, sulfur nitride polymers, siloxanes, and combinations thereof.
  • Organometallic polymers include, but are not limited to, organometallic polymers of main group metals, transition metals, and lanthanide/actinide metals, or combinations thereof.
  • Hybrid organic/inorganic polymer systems include, but are not limited to, organically modified silicates, preceramic polymers, polyimide-silica hybrids, (meth)acrylate-silica hybrids, polydimethylsiloxane-silica hybrids, ceramers, and combinations thereof.
  • the barrier layers may be made from the same barrier material or different barrier material.
  • the barrier layer can be made from any suitable barrier material.
  • the barrier material can be transparent or opaque depending on what the composite is to be used for.
  • Suitable barrier materials include, but are not limited to, metals, metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, and combinations thereof.
  • Metals include, but are not limited to, aluminum, titanium, indium, tin, tantalum, zirconium, niobium, hafnium, yttrium, nickel, tungsten, chromium, zinc, alloys thereof, and combinations thereof.
  • Metal oxides include, but are not limited to, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, hafnium oxide, yttrium oxide, nickel oxide, tungsten oxide, chromium oxide, zinc oxide, and combinations thereof.
  • Metal nitrides include, but are not limited to, aluminum nitride, silicon nitride, boron nitride, germanium nitride, chromium nitride, nickel nitride, and combinations thereof.
  • Metal carbides include, but are not limited to, boron carbide, tungsten carbide, silicon carbide, and combinations thereof.
  • Metal oxynitrides include, but are not limited to, aluminum oxynitride, silicon oxynitride, boron oxynitride, and combinations thereof.
  • Metal oxyborides include, but are limited to, zirconium oxyboride, titanium oxyboride, and combinations thereof.
  • Suitable barrier materials also include, but are not limited to, opaque metals, opaque ceramics, opaque polymers, and opaque cermets, and combinations thereof.
  • Opaque cermets include, but are not limited to, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, niobium nitride, tungsten disilicide, titanium diboride, and zirconium diboride, and combinations thereof.
  • the barrier layers may be deposited by any suitable process including, but not limited to, conventional vacuum processes such as sputtering, evaporation, sublimation, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance-plasma enhanced vapor deposition (ECR-PECVD), and combinations thereof.
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • ECR-PECVD electron cyclotron resonance-plasma enhanced vapor deposition
  • the decoupling layer can be produced by a number of known processes which provide improved surface planarity, including both atmospheric processes and vacuum processes.
  • the decoupling layer may be formed by depositing a layer of liquid and subsequently processing the layer of liquid into a solid film. Depositing the decoupling layer as a liquid allows the liquid to flow over the defects in the substrate or previous layer, filling in low areas, and covering up high points, providing a surface with significantly improved planarity. When the decoupling layer is processed into a solid film, the improved surface planarity is retained.
  • Suitable processes for depositing a layer of liquid material and processing it into a solid film include, but are not limited to, vacuum processes and atmospheric processes.
  • Suitable vacuum processes include, but are not limited to, those described in U.S. Pat. Nos.
  • Suitable atmospheric processes include, but are not limited to, spin coating, printing, ink jet printing, and/or spraying.
  • atmospheric processes we mean processes run at pressures of about 1 atmosphere that can employ the ambient atmosphere.
  • the use of atmospheric processes presents a number of difficulties including the need to cycle between a vacuum environment for depositing the barrier layer and ambient conditions for the decoupling layer, and the exposure of the environmentally sensitive device to environmental contaminants, such as oxygen and moisture.
  • One way to alleviate these problems is to use a specific gas (purge gas) during the atmospheric process to control exposure of the receiving substrate to the environmental contaminants.
  • the process could include cycling between a vacuum environment for barrier layer deposition and an ambient pressure nitrogen environment for the atmospheric process.
  • Printing processes including ink jet printing, allow the deposition of the decoupling layer in a precise area without the use of masks.
  • One way to make a decoupling layer involves depositing a polymer precursor, such as a (meth)acrylate containing polymer precursor, and then polymerizing it in situ to form the decoupling layer.
  • a polymer precursor means a material which can be polymerized to form a polymer, including, but not limited to, monomers, oligomers, and resins.
  • a preceramic precursor could be deposited as a liquid by spin coating and then converted to a solid layer. Full thermal conversion is possible for a film of this type directly on a glass or oxide coated substrate.
  • Electron beam techniques could be used to crosslink and/or densify some of these types of polymers and can be combined with thermal techniques to overcome some of the substrate thermal limitations, provided the substrate can handle the electron beam exposure.
  • a decoupling layer involves depositing a material, such as a polymer precursor, as a liquid at a temperature above its melting point and subsequently freezing it in place.
  • One method of making the composite of the present invention includes providing a substrate, and depositing a barrier layer adjacent to the substrate at a barrier deposition station.
  • the substrate with the barrier layer is moved to a decoupling material deposition station.
  • a mask is provided with an opening which limits the deposition of the decoupling layer to an area which is smaller than, and contained within, the area covered by the barrier layer.
  • the first layer deposited could be either the barrier layer or the decoupling layer, depending on the design of the composite.
  • the decoupling material may be deposited through multiple openings in a single shadow mask, or through multiple shadow masks. This allows the motherglass to be subsequently diced into individual environmentally sensitive devices, each of which is edge sealed.
  • the mask may be in the form of a rectangle with the center removed (like a picture frame).
  • the decoupling material is then deposited through the opening in the mask.
  • the layer of decoupling material formed in this way will cover an area less than the area covered by the layer of barrier material.
  • This type of mask can be used in either a batch process or a roll coating process operated in a step and repeat mode. With these processes, all four edges of the decoupling layer will be sealed by the barrier material when a second barrier layer which has an area greater than the area of the decoupling layer is deposited over the decoupling layer.
  • the method can also be used in a continuous roll to roll process using a mask having two sides which extend inward over the substrate.
  • the opening is formed between the two sides of the mask which allows continuous deposition of decoupling material.
  • the mask may have transverse connections between the two sides so long as they are not in the deposition area for the decoupling layer.
  • the mask is positioned laterally and at a distance from the substrate so as to cause the decoupling material to be deposited over an area less than that of the barrier layer. In this arrangement, the lateral edges of the decoupling layer are sealed by the barrier layer.
  • the substrate can then be moved to a barrier deposition station (either the original barrier deposition station or a second one), and a second layer of barrier material deposited on the decoupling layer. Since the area covered by the first barrier layer is greater than the area of the decoupling layer, the decoupling layer is sealed between the two barrier layers. These deposition steps can be repeated if necessary until sufficient barrier material is deposited for the particular application.
  • a barrier deposition station either the original barrier deposition station or a second one
  • the substrate can be passed by one or more decoupling material deposition stations one or more times before being moved to the barrier deposition station.
  • the decoupling layers can be made from the same decoupling material or different decoupling material.
  • the decoupling layers can be deposited using the same process or using different processes.
  • one or more barrier stacks can include two or more barrier layers.
  • the barrier layers can be formed by passing the substrate (either before or after the decoupling layers have been deposited) past one or more barrier deposition stations one or more times, building up the number of layers desired.
  • the layers can be made of the same or different barrier material, and they can be deposited using the same or different processes.
  • the method involves providing a substrate and depositing a layer of barrier material on the surface of the substrate at a barrier deposition station.
  • the substrate with the barrier layer is moved to a decoupling material deposition station where a layer of decoupling material is deposited over substantially the whole surface of the barrier layer.
  • a solid mask is then placed over the substrate with the barrier layer and the decoupling layer. The mask protects the central area of the surface, which would include the areas covered by the active environmentally sensitive devices.
  • a reactive plasma can be used to etch away the edges of the layer of decoupling material outside the mask, which results in the layer of etched decoupling material covering an area less than the area covered by the layer of barrier material.
  • Suitable reactive plasmas include, but are not limited to, O 2 , CF 4 , and H 2 , and combinations thereof.
  • a layer of barrier material covering an area greater than that covered by the etched decoupling layer can then be deposited, sealing the etched decoupling layer between the layers of barrier material.
  • the deposition and etching steps can be repeated until sufficient barrier material is deposited.
  • This method can be used in a batch process or in a roll coating process operated in a step and repeat mode. In these processes, all four edges of the decoupling layer may be etched.
  • This method can also be used in continuous roll to roll processes. In this case, only the edges of the decoupling material in the direction of the process are etched.
  • two masks can be used, one for the decoupling material and one for the barrier material. This would allow encapsulation with an edge seal of device which has electrical contacts which extend outside the encapsulation.
  • the electrical contacts can remain uncoated (or require only minimal post-encapsulation cleaning.)
  • the electrical contacts will typically be thin layer constructions that are sensitive to post-encapsulation cleaning or may be difficult to expose by selective etching of the encapsulation.
  • a mask is applied only for the decoupling material, a thick barrier layer could extend over the areas between the devices and cover the contacts. Furthermore, cutting through the thick barrier layer could be difficult.
  • the mask 500 for the decoupling material has a smaller opening than the mask 505 for the barrier material. This allows the barrier layer 510 to encapsulate the decoupling layer 515 .
  • the masks 500 , 505 can optionally have an undercut 520 , 525 that keeps the deposited decoupling material and/or barrier material from contacting the mask at the point where the mask contacts the substrate 530 .
  • the undercut 520 for the decoupling mask 500 can be sufficient to place the decoupling mask contact point 535 outside edge of barrier layer 510 , as shown in FIG. 7 .
  • the cut edges will expose the edges of the decoupling layers. These cut edges may require additional sealing if the exposure compromises barrier performance.
  • One method for sealing edges which are to be cut involves depositing a ridge on the substrate before depositing the barrier stack.
  • the ridge interferes with the deposition of the decoupling layer so that the area of barrier material is greater than the area of decoupling material and the decoupling layer is sealed by the barrier layer within the area of barrier material.
  • the ridge should be fairly pointed, for example, triangular shaped, in order to interrupt the deposition and allow the layers of barrier material to extend beyond the layers of decoupling material.
  • the ridge can be deposited anywhere that a cut will need to be made, such as around individual environmentally sensitive devices.
  • the ridge can be made of any suitable material, including, but not limited to, photoresist and barrier materials, such as described previously.

Abstract

An edge-sealed, encapsulated environmentally sensitive device. The device includes an environmentally sensitive device, and at least one edge-sealed barrier stack. The edge-sealed barrier stack includes a decoupling layer and at least two barrier layers. The environmentally sensitive device is sealed between an edge-sealed barrier stack and either a substrate or another edge-sealed barrier stack. A method of making the edge-sealed, encapsulated environmentally sensitive device is also disclosed.

Description

    CROSS REFERENCE OF RELATED APPLICATIONS
  • This application is a continuation of application Ser. No. 11/112,860, filed Apr. 22, 2005, entitled Method for Edge Sealing Barrier Films, which is continuation-in-part of application Ser. No. 11/068,356, filed Feb. 28, 2005, entitled Method for Edge Sealing Barrier Films, which is a division of application Ser. No. 09/966,163, filed Sep. 28, 2001, entitled Method for Edge Sealing Barrier Films, now U.S. Pat. No. 6,866,901, which is a continuation-in-part of application Ser. No. 09/427,138, filed Oct. 25, 1999, entitled Environmental Barrier Material for Organic Light Emitting Device and Method of Making, now U.S. Pat. No. 6,522,067.
  • BACKGROUND OF THE INVENTION
  • The invention relates generally to multilayer, thin film barrier composites, and more particularly, to multilayer, thin film barrier composites having the edges sealed against lateral moisture and gas diffusion.
  • Multilayer, thin film barrier composites having alternating layers of barrier material and polymer material are known. These composites are typically formed by depositing alternating layers of barrier material and polymer material, such as by vapor deposition. If the polymer layers are deposited over the entire surface of the substrate, then the edges of the polymer layers are exposed to oxygen, moisture, and other contaminants. This potentially allows the moisture, oxygen, or other contaminants to diffuse laterally into an encapsulated environmentally sensitive device from the edge of the composite, as shown in FIG. 1. The multilayer, thin film barrier composite 100 includes a substrate 105 and alternating layers of decoupling material 110 and barrier material 115. The scale of FIG. 1 is greatly expanded in the vertical direction. The area of the substrate 105 will typically vary from a few square centimeters to several square meters. The barrier layers 115 are typically a few hundred Angstroms thick, while the decoupling layers 110 are generally less than ten microns thick. The lateral diffusion rate of moisture and oxygen is finite, and this will eventually compromise the encapsulation. One way to reduce the problem of edge diffusion is to provide long edge diffusion paths. However, this decreases the area of the substrate which is usable for active environmentally sensitive devices. In addition, it only lessens the problem, but does not eliminate it.
  • A similar edge diffusion problem will arise when a substrate containing a multilayer, thin film barrier composite is scribed and separated to create individual components.
  • SUMMARY OF THE INVENTION
  • Thus, there is a need for an edge-sealed barrier film composite, and for a method of making such a composite.
  • The present invention solves this need by providing an edge-sealed, encapsulated environmentally sensitive device. The edge-sealed, environmentally sensitive device includes at least one initial barrier stack comprising at least one decoupling layer and at least one barrier layer. A first decoupling layer of a first initial barrier stack has an area and a first barrier layer of the first initial barrier stack has an area, the area of the first barrier layer of the first initial barrier stack being greater than the area of the first decoupling layer of the first initial barrier stack. The first barrier layer of the first initial barrier stack is in contact with a third barrier layer or an optional substrate, sealing the first decoupling layer of the first initial barrier stack between the first barrier layer of the first initial barrier stack and the third barrier layer or the optional substrate. An environmentally sensitive device is adjacent to the at least one initial barrier stack. At least one additional barrier stack is adjacent to the environmentally sensitive device on a side opposite the at least one initial barrier stack. The at least one additional barrier stack comprises at least one decoupling layer and at least one barrier layer. A first decoupling layer of a first additional barrier stack has an area and a first barrier layer of the first additional barrier stack has an area, the area of the first barrier layer of the first additional barrier stack being greater than the area of the first decoupling layer of the first additional barrier stack. The first barrier layer of the first additional barrier stack is in contact with a fourth barrier layer, sealing the first decoupling layer of the first additional barrier stack between the first barrier layer of the first additional barrier stack and the fourth barrier layer. At least one barrier layer of at least one initial barrier stack is in contact with at least one barrier layer of at least one additional barrier stack, sealing the environmentally sensitive device between the at least one initial barrier stack and the at least one additional barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity.
  • By adjacent, we mean next to, but not necessarily directly next to. There can be additional layers intervening between the substrate and the barrier stacks, and between the barrier stacks and the environmentally sensitive device, etc.
  • Another aspect of the invention is a method of making an edge-sealed, encapsulated environmentally sensitive device. The method includes providing at least one initial barrier stack, the at least one initial barrier stack comprising at least one decoupling layer and at least one barrier layer, wherein a first decoupling layer of a first initial barrier stack has an area and wherein a first barrier layer of the first initial barrier stack has an area, the area of the first barrier layer of the first initial barrier stack being greater than the area of the first decoupling layer of the first initial barrier stack, and wherein the first barrier layer of the first initial barrier stack is in contact with a third barrier layer or an optional substrate, sealing the first decoupling layer of the first initial barrier stack between the first barrier layer of the first initial barrier stack and the third barrier layer or the optional substrate; placing an environmentally sensitive device adjacent to the at least one initial barrier stack; and placing at least one additional barrier stack adjacent to the environmentally sensitive device on a side opposite the at least one initial barrier stack, the at least one additional barrier stack comprising at least one decoupling layer and at least one barrier layer, wherein a first decoupling layer of a first additional barrier stack has an area and wherein a first barrier layer of the first additional barrier stack has an area, the area of the first barrier layer of the first additional barrier stack being greater than the area of the first decoupling layer of the first additional barrier stack, wherein the first barrier layer of the first additional barrier stack is in contact with a fourth barrier layer, sealing the first decoupling layer of the first additional barrier stack between the first barrier layer of the first additional barrier stack and the fourth barrier layer, and wherein at least one barrier layer of at least one initial barrier stack is in contact with at least one barrier layer of at least one additional barrier stack, sealing the environmentally sensitive device between the at least one initial barrier stack and the at least one additional barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-section of a barrier composite of the prior art.
  • FIG. 2 is a cross-section of one embodiment of an edge-sealed, encapsulated environmentally sensitive device of the present invention.
  • FIG. 3 shows a successful barrier layer without a seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 4 shows a successful edge seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 5 shows a failed edge seal after 750 hours at 60° C. and 90% relative humidity.
  • FIG. 6 shows a cross-section of one embodiment of a substrate and mask arrangement and a plan view of the resulting seal.
  • FIG. 7 shows a cross-section of another embodiment of a substrate and mask arrangement and a plan view of the resulting seal.
  • DETAILED DESCRIPTION OF THE INVENTION
  • FIG. 2 shows an edge-sealed, encapsulated environmentally sensitive device 400. There is a substrate 405 which can be removed after the device is made, if desired. The environmentally sensitive device 430 is encapsulated between initial barrier stack 422 on one side and additional barrier stack 440 on the other side. There is another initial barrier stack 420 between the substrate 405 and initial barrier stack 422.
  • The environmentally sensitive device can be any device requiring protection from moisture, gas, or other contaminants. Environmentally sensitive devices include, but are not limited to, organic light emitting devices, liquid crystal displays, displays using electrophoretic inks, light emitting diodes, light emitting polymers, electroluminescent devices, phosphorescent devices, organic solar cells, inorganic solar cells, thin film batteries, and thin film devices with vias, and combinations thereof.
  • The substrate, which is optional, can be any suitable substrate, and can be either rigid or flexible. Suitable substrates include, but are not limited to: polymers, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or high temperature polymers, such as polyether sulfone (PES), polyimides, or Transphan™ (a high glass transition temperature cyclic olefin polymer available from Lofo High Tech Film, GMBH of Weil am Rhein, Germany); metals and metal foils; paper; fabric; glass, including thin, flexible, glass sheet (for example, flexible glass sheet available from Corning Inc. under the glass code 0211. This particular thin, flexible glass sheet has a thickness of less than 0.6 mm and will bend at a radium of about 8 inches.); ceramics; semiconductors; silicon; and combinations thereof.
  • Barrier stack 420 has a barrier layer 415 which has an area greater than the area of the decoupling layer 410 which seals the decoupling layer 410 within the area of the barrier layer 415. Barrier stack 422 has two barrier layers 415, 417 and two decoupling layers 410, 412. Barrier layer 415 has an area greater than that of the decoupling layers 410, 412 which seals the decoupling layers 410, 412 within the area of the barrier layer 415. There is a second barrier layer 417. Because the decoupling layers 410, 412 are sealed within the area covered by the barrier layer 415, ambient moisture, oxygen, and other contaminants cannot diffuse through the decoupling layers to the environmentally sensitive device.
  • On the other side of the environmentally sensitive device 430, there is an additional barrier stack 440. Barrier stack 440 includes two decoupling layers 410 and two barrier layers 415 which may be of approximately the same size. Barrier stack 440 also includes barrier layer 435 which has an area greater than the area of the decoupling layers 410 which seals the decoupling layers 410 within the area of barrier layer 435.
  • It is not required that all of the barrier layers have an area greater than all of the decoupling layers, but at least one of the barrier layers must have an area greater than at least one of the decoupling layers. If not all of the barrier layers have an area greater than of the decoupling layers, the barrier layers which do have an area greater than the decoupling layers should form a seal around those which do not so that there are no exposed decoupling layers within the barrier composite, although, clearly it is a matter of degree. The fewer the edge areas of decoupling layers exposed, the less the edge diffusion. If some diffusion is acceptable, then a complete barrier is not required.
  • The barrier stacks of the present invention on polymeric substrates, such as PET, have measured oxygen transmission rate (OTR) and water vapor transmission rate (WVTR) values well below the detection limits of current industrial instrumentation used for permeation measurements (Mocon Ox Tran 2/20L and Permatran). Table 1 shows the OTR and WVTR values (measured according to ASTM F 1927-98 and ASTM F 1249-90, respectively) measured at Mocon (Minneapolis, Minn.) for several barrier stacks on 7 mil PET, along with reported values for other materials.
    TABLE 1
    Oxygen Water Vapor
    Permeation Rate Permeation
    (cc/m2/day) (g/m2/day)+
    Sample 23° C. 38° C. 23° C. 38° C.
    Native 7 mil PET 7.62
    1-barrier stack <0.005 <0.005* 0.46+
    1-barrier stack with ITO <0.005 <0.005* 0.011+
    2-barrier stacks <0.005 <0.005* <0.005+
    2-barrier stacks with ITO <0.005 <0.005* <0.005+
    5-barrier stacks <0.005 <0.005* <0.005+
    5-barrier stacks with ITO <0.005 <0.005* <0.005+
    DuPont film1 0.3
    (PET/Si3N4 or PEN/Si3N4)
    Polaroid3 <1.0
    PET/Al2 0.6 0.17
    PET/silicon oxide2 0.7-1.5 0.15-0.9
    Teijin LCD film <2 <5
    (HA grade - TN/STN)3

    *38° C., 90% RH, 100% O2

    +38° C., 100% RH

    1P. F. Carcia, 46th International Symposium of the American Vacuum Society, Oct. 1999

    2Langowski, H. C., 39th Annual Technical Conference Proceedings, SVC, pp. 398-401 (1996)

    3Technical Data Sheet
  • As the data in Table 1 shows, the barrier stacks of the present invention provide oxygen and water vapor permeation rates several orders of magnitude better than PET coated with aluminum, silicon oxide, or aluminum oxide. Typical oxygen permeation rates for other barrier coatings range from about 1 to about 0.1 cc/m2/day. The oxygen transmission rate for the barrier stacks of the present invention is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity, and at 38° C. and 90% relative humidity. The water vapor transmission rate is less than 0.005 g/m2/day at 38° C. and 100% relative humidity. The actual transmission rates are lower, but cannot be measured with existing equipment.
  • In theory, a good edge seal should be no more permeable than the overall barrier layer. This should result in failure at the edges occurring at a rate statistically the same as that observed anywhere else. In practice, the areas closest to the edge show failure first, and the inference is that edge failure is involved.
  • The Mocon test for the barrier layers requires significant surface area, and cannot be used to test the edge seal directly. A test using a layer of calcium was developed to measure barrier properties. The calcium test is described in Nisato et al., “Thin Film Encapsulation for OLEDs: Evaluation of Multi-layer Barriers using the Ca Test,” SID 03 Digest, 2003, p. 550-553, which is incorporated herein by reference. The calcium test can be used to evaluate edge seal performance for both oxygen transmission rate and water vapor transmission rate. An encapsulated device is made, and the edges are observed for degradation in response to permeation by oxygen and water. The determination is qualitative: pass/fail. Failure is noted at the edges, and the failure progresses inwards from the edges over time. An edge seal which passes the calcium test has an oxygen transmission rate for the edge seal of less than 0.005 cc/m2/day at 23° C. and 0% relative humidity, and at 38° C. and 90% relative humidity. It would also have a water vapor transmission rate of less than 0.005 g/m2/day at 38° C. and 100% relative humidity.
  • FIGS. 3-5 show results from calcium tests after 750 hours at 60° C. and 90% relative humidity. FIG. 3 shows a successful barrier layer without a seal. The edge of the barrier layer is more than 50 mm from the calcium edge. FIG. 4 shows a successful edge seal. The edge of the barrier layer is 3 mm from the calcium edge, and no degradation is observed. FIG. 5 shows an edge seal which failed. The edge of the barrier layer is 3 mm from the calcium edge, and severe degradation can be seen.
  • The number of barrier stacks is not limited. The number of barrier stacks needed depends on the substrate material used and the level of permeation resistance needed for the particular application. One or two barrier stacks may provide sufficient barrier properties for some applications. The most stringent applications may require five or more barrier stacks.
  • The barrier stacks can have one or more decoupling layers and one or more barrier layers. There could be one decoupling layer and one barrier layer, there could be one or more decoupling layers on one side of one or more barrier layers, there could be one or more decoupling layers on both sides of one or more barrier layers, or there could be one or more barrier layers on both sides of one or more decoupling layers. The important feature is that the barrier stack have at least one decoupling layer and at least one barrier layer. The barrier layers in the barrier stacks can be made of the same material or of a different material, as can the decoupling layers. The barrier layers are typically about 100-400 Å thick, and the decoupling layers are typically about 1000-10,000 Å thick.
  • The barrier stacks can have the same or different layers, and the layers can be in the same or different sequences.
  • If there is only one barrier stack and it has only one decoupling layer and one barrier layer, then the decoupling layer must be first in order for the barrier layer to seal it. The decoupling layer will be sealed between the substrate (or the upper layer of the previous barrier stack) and the barrier layer. Although a device can be made with a single barrier stack having one decoupling layer and one barrier layer on each side of the environmentally sensitive device, there will typically be at least two barrier stacks on each side, each stack having one (or more) decoupling layer and one (or more) barrier layer. In this case, the first layer in the stack can be either a decoupling layer or a barrier layer, as can the last layer.
  • The barrier layer which seals the decoupling layer may be the first barrier layer in the barrier stack, as shown in barrier stack 420. It may also be a second (or later) barrier layer as shown in barrier stack 440. Barrier layer 435 which seals the barrier stack 440 is the third barrier layer in the barrier stack following two barrier layers 415 which do not seal the barrier stack. Thus, the use of the terms first decoupling layer and first barrier layer in the claims does not refer to the actual sequence of layers, but to layers which meet the limitations. Similarly, the terms first initial barrier stack and first additional barrier stack do not refer to the actual sequence of the initial and additional barrier stacks.
  • The decoupling layers may be made from the same decoupling material or different decoupling material. The decoupling layer can be made of any suitable decoupling material, including, but not limited to, organic polymers, inorganic polymers, organometallic polymers, hybrid organic/inorganic polymer systems, silicates, and combinations thereof. Organic polymers include, but are not limited to, urethanes, polyamides, polyimides, polybutylenes, isobutylene isoprene, polyolefins, epoxies, parylenes, benzocyclobutadiene, polynorbornenes, polyarylethers, polycarbonates, alkyds, polyaniline, ethylene vinyl acetate, ethylene acrylic acid, and combinations thereof. Inorganic polymers include, but are not limited to, silicones, polyphosphazenes, polysilazanes, polycarbosilanes, polycarboranes, carborane siloxanes, polysilanes, phosphonitriles, sulfur nitride polymers, siloxanes, and combinations thereof. Organometallic polymers include, but are not limited to, organometallic polymers of main group metals, transition metals, and lanthanide/actinide metals, or combinations thereof. Hybrid organic/inorganic polymer systems include, but are not limited to, organically modified silicates, preceramic polymers, polyimide-silica hybrids, (meth)acrylate-silica hybrids, polydimethylsiloxane-silica hybrids, ceramers, and combinations thereof.
  • The barrier layers may be made from the same barrier material or different barrier material. The barrier layer can be made from any suitable barrier material. The barrier material can be transparent or opaque depending on what the composite is to be used for. Suitable barrier materials include, but are not limited to, metals, metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, and combinations thereof. Metals include, but are not limited to, aluminum, titanium, indium, tin, tantalum, zirconium, niobium, hafnium, yttrium, nickel, tungsten, chromium, zinc, alloys thereof, and combinations thereof. Metal oxides include, but are not limited to, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, hafnium oxide, yttrium oxide, nickel oxide, tungsten oxide, chromium oxide, zinc oxide, and combinations thereof. Metal nitrides include, but are not limited to, aluminum nitride, silicon nitride, boron nitride, germanium nitride, chromium nitride, nickel nitride, and combinations thereof. Metal carbides include, but are not limited to, boron carbide, tungsten carbide, silicon carbide, and combinations thereof. Metal oxynitrides include, but are not limited to, aluminum oxynitride, silicon oxynitride, boron oxynitride, and combinations thereof. Metal oxyborides include, but are limited to, zirconium oxyboride, titanium oxyboride, and combinations thereof. Suitable barrier materials also include, but are not limited to, opaque metals, opaque ceramics, opaque polymers, and opaque cermets, and combinations thereof. Opaque cermets include, but are not limited to, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, niobium nitride, tungsten disilicide, titanium diboride, and zirconium diboride, and combinations thereof.
  • The barrier layers may be deposited by any suitable process including, but not limited to, conventional vacuum processes such as sputtering, evaporation, sublimation, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance-plasma enhanced vapor deposition (ECR-PECVD), and combinations thereof.
  • The decoupling layer can be produced by a number of known processes which provide improved surface planarity, including both atmospheric processes and vacuum processes. The decoupling layer may be formed by depositing a layer of liquid and subsequently processing the layer of liquid into a solid film. Depositing the decoupling layer as a liquid allows the liquid to flow over the defects in the substrate or previous layer, filling in low areas, and covering up high points, providing a surface with significantly improved planarity. When the decoupling layer is processed into a solid film, the improved surface planarity is retained. Suitable processes for depositing a layer of liquid material and processing it into a solid film include, but are not limited to, vacuum processes and atmospheric processes. Suitable vacuum processes include, but are not limited to, those described in U.S. Pat. Nos. 5,260,095, 5,395,644, 5,547,508, 5,691,615, 5,902,641, 5,440,446, and 5,725,909, which are incorporated herein by reference. The liquid spreading apparatus described in U.S. Pat. Nos. 5,260,095, 5,395,644, and 5,547,508 can be further configured to print liquid monomer in discrete, precisely placed regions of the receiving substrate.
  • Suitable atmospheric processes include, but are not limited to, spin coating, printing, ink jet printing, and/or spraying. By atmospheric processes, we mean processes run at pressures of about 1 atmosphere that can employ the ambient atmosphere. The use of atmospheric processes presents a number of difficulties including the need to cycle between a vacuum environment for depositing the barrier layer and ambient conditions for the decoupling layer, and the exposure of the environmentally sensitive device to environmental contaminants, such as oxygen and moisture. One way to alleviate these problems is to use a specific gas (purge gas) during the atmospheric process to control exposure of the receiving substrate to the environmental contaminants. For example, the process could include cycling between a vacuum environment for barrier layer deposition and an ambient pressure nitrogen environment for the atmospheric process. Printing processes, including ink jet printing, allow the deposition of the decoupling layer in a precise area without the use of masks.
  • One way to make a decoupling layer involves depositing a polymer precursor, such as a (meth)acrylate containing polymer precursor, and then polymerizing it in situ to form the decoupling layer. As used herein, the term polymer precursor means a material which can be polymerized to form a polymer, including, but not limited to, monomers, oligomers, and resins. As another example of a method of making a decoupling layer, a preceramic precursor could be deposited as a liquid by spin coating and then converted to a solid layer. Full thermal conversion is possible for a film of this type directly on a glass or oxide coated substrate. Although it cannot be fully converted to a ceramic at temperatures compatible with some flexible substrates, partial conversion to a cross-lined network structure would be satisfactory. Electron beam techniques could be used to crosslink and/or densify some of these types of polymers and can be combined with thermal techniques to overcome some of the substrate thermal limitations, provided the substrate can handle the electron beam exposure. Another example of making a decoupling layer involves depositing a material, such as a polymer precursor, as a liquid at a temperature above its melting point and subsequently freezing it in place.
  • One method of making the composite of the present invention includes providing a substrate, and depositing a barrier layer adjacent to the substrate at a barrier deposition station. The substrate with the barrier layer is moved to a decoupling material deposition station. A mask is provided with an opening which limits the deposition of the decoupling layer to an area which is smaller than, and contained within, the area covered by the barrier layer. The first layer deposited could be either the barrier layer or the decoupling layer, depending on the design of the composite.
  • In order to encapsulate multiple small environmentally sensitive devices contained on a single large motherglass, the decoupling material may be deposited through multiple openings in a single shadow mask, or through multiple shadow masks. This allows the motherglass to be subsequently diced into individual environmentally sensitive devices, each of which is edge sealed.
  • For example, the mask may be in the form of a rectangle with the center removed (like a picture frame). The decoupling material is then deposited through the opening in the mask. The layer of decoupling material formed in this way will cover an area less than the area covered by the layer of barrier material. This type of mask can be used in either a batch process or a roll coating process operated in a step and repeat mode. With these processes, all four edges of the decoupling layer will be sealed by the barrier material when a second barrier layer which has an area greater than the area of the decoupling layer is deposited over the decoupling layer.
  • The method can also be used in a continuous roll to roll process using a mask having two sides which extend inward over the substrate. The opening is formed between the two sides of the mask which allows continuous deposition of decoupling material. The mask may have transverse connections between the two sides so long as they are not in the deposition area for the decoupling layer. The mask is positioned laterally and at a distance from the substrate so as to cause the decoupling material to be deposited over an area less than that of the barrier layer. In this arrangement, the lateral edges of the decoupling layer are sealed by the barrier layer.
  • The substrate can then be moved to a barrier deposition station (either the original barrier deposition station or a second one), and a second layer of barrier material deposited on the decoupling layer. Since the area covered by the first barrier layer is greater than the area of the decoupling layer, the decoupling layer is sealed between the two barrier layers. These deposition steps can be repeated if necessary until sufficient barrier material is deposited for the particular application.
  • When one of the barrier stacks includes two or more decoupling layers, the substrate can be passed by one or more decoupling material deposition stations one or more times before being moved to the barrier deposition station. The decoupling layers can be made from the same decoupling material or different decoupling material. The decoupling layers can be deposited using the same process or using different processes.
  • Similarly, one or more barrier stacks can include two or more barrier layers. The barrier layers can be formed by passing the substrate (either before or after the decoupling layers have been deposited) past one or more barrier deposition stations one or more times, building up the number of layers desired. The layers can be made of the same or different barrier material, and they can be deposited using the same or different processes.
  • In another embodiment, the method involves providing a substrate and depositing a layer of barrier material on the surface of the substrate at a barrier deposition station. The substrate with the barrier layer is moved to a decoupling material deposition station where a layer of decoupling material is deposited over substantially the whole surface of the barrier layer. A solid mask is then placed over the substrate with the barrier layer and the decoupling layer. The mask protects the central area of the surface, which would include the areas covered by the active environmentally sensitive devices. A reactive plasma can be used to etch away the edges of the layer of decoupling material outside the mask, which results in the layer of etched decoupling material covering an area less than the area covered by the layer of barrier material. Suitable reactive plasmas include, but are not limited to, O2, CF4, and H2, and combinations thereof. A layer of barrier material covering an area greater than that covered by the etched decoupling layer can then be deposited, sealing the etched decoupling layer between the layers of barrier material.
  • To ensure good coverage of the edge of the decoupling layer by the barrier layer, techniques for masking and etching the decoupling layer to produce a feathered edge, i.e., a gradual slope instead of a sharp step, may be employed. Several such techniques are known to those in the art, including, but not limited to, standing off the mask a short distance above a polymer surface to be etched.
  • The deposition and etching steps can be repeated until sufficient barrier material is deposited. This method can be used in a batch process or in a roll coating process operated in a step and repeat mode. In these processes, all four edges of the decoupling layer may be etched. This method can also be used in continuous roll to roll processes. In this case, only the edges of the decoupling material in the direction of the process are etched.
  • Alternatively, two masks can be used, one for the decoupling material and one for the barrier material. This would allow encapsulation with an edge seal of device which has electrical contacts which extend outside the encapsulation. The electrical contacts can remain uncoated (or require only minimal post-encapsulation cleaning.) The electrical contacts will typically be thin layer constructions that are sensitive to post-encapsulation cleaning or may be difficult to expose by selective etching of the encapsulation. In addition, if a mask is applied only for the decoupling material, a thick barrier layer could extend over the areas between the devices and cover the contacts. Furthermore, cutting through the thick barrier layer could be difficult.
  • As shown in FIGS. 6 and 7, the mask 500 for the decoupling material has a smaller opening than the mask 505 for the barrier material. This allows the barrier layer 510 to encapsulate the decoupling layer 515.
  • The masks 500, 505 can optionally have an undercut 520, 525 that keeps the deposited decoupling material and/or barrier material from contacting the mask at the point where the mask contacts the substrate 530. The undercut 520 for the decoupling mask 500 can be sufficient to place the decoupling mask contact point 535 outside edge of barrier layer 510, as shown in FIG. 7.
  • If a composite is made using a continuous process and the edged sealed composite is cut in the transverse direction, the cut edges will expose the edges of the decoupling layers. These cut edges may require additional sealing if the exposure compromises barrier performance.
  • One method for sealing edges which are to be cut involves depositing a ridge on the substrate before depositing the barrier stack. The ridge interferes with the deposition of the decoupling layer so that the area of barrier material is greater than the area of decoupling material and the decoupling layer is sealed by the barrier layer within the area of barrier material. The ridge should be fairly pointed, for example, triangular shaped, in order to interrupt the deposition and allow the layers of barrier material to extend beyond the layers of decoupling material. The ridge can be deposited anywhere that a cut will need to be made, such as around individual environmentally sensitive devices. The ridge can be made of any suitable material, including, but not limited to, photoresist and barrier materials, such as described previously.
  • While certain representative embodiments and details have been shown for purposes of illustrating the invention, it will be apparent to those skilled in the art that various changes in the compositions and methods disclosed herein may be made without departing from the scope of the invention, which is defined in the appended claims.

Claims (31)

1. An edge-sealed, encapsulated environmentally sensitive device comprising:
a substrate;
an environmentally sensitive device adjacent to the substrate; and
an edge-sealed barrier stack adjacent to the environmentally sensitive device, the edge-sealed barrier stack comprising a decoupling layer and at least two barrier layers, wherein the decoupling layer has an area, wherein the first barrier layer has an area, and wherein the second barrier layer has an area, the area of the first and second barrier layers being greater than the area of the decoupling layer, and wherein the decoupling layer is sealed between the first and second barrier layers; and
wherein at least one barrier layer of the edge-sealed barrier stack is in contact with the substrate, sealing the environmentally sensitive device between the substrate and the edge-sealed barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity.
2. The edge-sealed, encapsulated environmentally sensitive device of claim 1 wherein at least one of the decoupling layers is selected from organic polymers, inorganic polymers, organometallic polymers, hybrid organic/inorganic polymer systems, silicates, or combinations thereof.
3. The edge-sealed, encapsulated environmentally sensitive device of claim 1 wherein at least one of the barrier layers comprises a barrier material selected from metals, metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, or combinations thereof.
4. The edge-sealed, encapsulated environmentally sensitive device of claim 1 wherein at least one of the barrier layers comprises a barrier material selected from aluminum, titanium, indium, tin, tantalum, zirconium, niobium, hafnium, yttrium, nickel, tungsten, chromium, zinc, alloys thereof, silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, hafnium oxide, yttrium oxide, nickel oxide, tungsten oxide, chromium oxide, zinc oxide, aluminum nitride, silicon nitride, boron nitride, germanium nitride, chromium nitride, nickel nitride, boron carbide, tungsten carbide, silicon carbide, aluminum oxynitride, silicon oxynitride, boron oxynitride, zirconium oxyboride, titanium oxyboride, and combinations thereof.
5. The edge-sealed, encapsulated environmentally sensitive device of claim 1 wherein the environmentally sensitive device is selected from organic light emitting devices, liquid crystal displays, displays using electrophoretic inks, light emitting diodes, displays using light emitting polymers, electroluminescent devices, phosphorescent devices, organic solar cells, inorganic solar cells, thin film batteries, or thin film devices with vias, or combinations thereof.
6. The edge-sealed, encapsulated environmentally sensitive device of claim 1 wherein the substrate is flexible.
7. The edge-sealed, encapsulated environmentally sensitive device of claim 1 further comprising a barrier stack positioned between the substrate and the environmentally sensitive device, the barrier stack comprising at least one decoupling layer and at least one barrier layer, and wherein at least one barrier layer of the edge-sealed barrier stack is in contact with at least one barrier layer of the barrier stack, sealing the environmentally sensitive device between the at least one barrier layer of the barrier stack and the edge-sealed barrier stack forming the environmentally sensitive device seal.
8. The edge-sealed environmentally sensitive device of claim 7 wherein the substrate is flexible.
9. An edge-sealed, encapsulated environmentally sensitive device comprising:
a substrate;
an environmentally sensitive device adjacent to the substrate; and
an edge-sealed barrier stack adjacent to the environmentally sensitive device, the edge-sealed barrier stack comprising a decoupling layer and a barrier layer, wherein the decoupling layer has an area, wherein the first barrier layer has an area, the area of the first barrier layer being greater than the area of the decoupling layer; and
wherein the barrier layer of the edge-sealed barrier stack is in contact with the substrate, sealing the environmentally sensitive device and the decoupling layer between the substrate and the barrier layer of the edge sealed barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity.
10. The edge-sealed, encapsulated environmentally sensitive device of claim 9 wherein at least one of the decoupling layers is selected from organic polymers, inorganic polymers, organometallic polymers, hybrid organic/inorganic polymer systems, silicates, or combinations thereof.
11. The edge-sealed, encapsulated environmentally sensitive device of claim 9 wherein at least one of the barrier layers comprises a barrier material selected from metals, metal oxides, metal nitrides, metal carbides, metal oxynitrides, metal oxyborides, or combinations thereof.
12. The edge-sealed, encapsulated environmentally sensitive device of claim 9 wherein the environmentally sensitive device is selected from organic light emitting devices, liquid crystal displays, displays using electrophoretic inks, light emitting diodes, displays using light emitting polymers, electroluminescent devices, phosphorescent devices, organic solar cells, inorganic solar cells, thin film batteries, or thin film devices with vias, or combinations thereof.
13. The edge-sealed, encapsulated environmentally sensitive device of claim 9 wherein the substrate is flexible.
14. The edge-sealed, encapsulated environmentally sensitive device of claim 9 further comprising a barrier stack positioned between the substrate and the environmentally sensitive device, the barrier stack comprising at least one decoupling layer and at least one barrier layer, and wherein the barrier layer of the edge-sealed barrier stack is in contact with at least one barrier layer of the barrier stack, sealing the environmentally sensitive device and the decoupling layer between the at least one barrier layer of the barrier stack and the barrier layer of the edge-sealed barrier stack forming the environmentally sensitive device seal.
15. The edge-sealed, encapsulated environmentally sensitive device of claim 14 wherein the substrate is flexible.
16. A method of making an edge-sealed, encapsulated environmentally sensitive device comprising:
providing an environmentally sensitive device on a substrate;
placing an edge-sealed barrier stack adjacent to the environmentally sensitive device, the edge-sealed barrier stack comprising a decoupling layer and at least two barrier layers, wherein the decoupling layer has an area, wherein the first barrier layer has an area, and wherein the second barrier layer has an area, the area of the first and second barrier layers being greater than the area of the decoupling layer, and wherein the decoupling layer is sealed between the first and second barrier layers;
wherein at least one barrier layer of the edge-sealed barrier stack is in contact with the substrate, sealing the environmentally sensitive device between the substrate and the edge-sealed barrier stack forming an environmentally sensitive device seal, wherein an oxygen transmission rate through the environmentally sensitive device seal is less than 0.005 cc/m2/day at 23° C. and 0% relative humidity.
17. The method of claim 16 wherein the edge-sealed barrier stack is formed by:
depositing a first barrier layer having an area;
depositing a decoupling layer having an area;
depositing a second barrier layer having an area;
the area of the first and second barrier layers being greater than the area of the decoupling layer wherein the first decoupling layer is sealed between the first and second barrier layers.
18. The method of claim 17 wherein depositing the decoupling layer comprises:
providing a mask with an opening; and
depositing the decoupling layer through the opening in the mask so that the area of the decoupling layer is less than the area of the first and second barrier layers.
19. The method of claim 18 wherein the mask has an undercut.
20. The method of claim 17 wherein depositing the first or second barrier layer comprises:
providing a mask with an opening; and
depositing the first or second barrier layer through the opening in the mask so that the area of the first or second barrier layer is greater than the area of the decoupling layer.
21. The method of claim 20 wherein the mask has an undercut.
22. The method of claim 17 wherein depositing the decoupling layer comprises:
depositing the decoupling layer having an initial area of decoupling material which is greater than the area of the decoupling layer; and
etching the decoupling layer having the initial area to remove a portion of the decoupling material so that the decoupling layer has the area of the decoupling layer.
23. The method of claim 22 wherein etching the decoupling layer comprises:
providing a solid mask over the decoupling layer having the initial area of decoupling material; and
etching the decoupling layer having the initial area of decoupling material to remove the portion of the decoupling material outside the solid mask so that the decoupling layer has the area of the decoupling layer.
24. The method of claim 22 wherein the decoupling layer is etched so that at least one edge of the decoupling layer has a gradual slope.
25. The method of claim 24 wherein the decoupling layer is etched using a reactive plasma.
26. The method of claim 25 wherein the reactive plasma is selected from O2, CF4, H2, or combinations thereof.
27. The method of claim 16 wherein placing the edge-sealed barrier stack adjacent to the environmentally sensitive device comprises laminating the edge-sealed barrier stack adjacent to the environmentally sensitive device.
28. The method of claim 27 wherein the edge-sealed barrier stack is laminated adjacent to the environmentally sensitive device using a process selected from heating, soldering, using an adhesive, ultrasonic welding, and applying pressure.
29. The method of claim 17 wherein the first and second barrier layers are depositing using a vacuum process.
30. The method of claim 17 wherein the decoupling layer is deposited using a process selected from vacuum processes or atmospheric processes.
31. The method of claim 17 wherein the decoupling layer is deposited using an atmospheric process selected from spin coating, printing, ink jet printing, spraying, or combinations thereof.
US11/693,022 1999-10-25 2007-03-29 Method for edge sealing barrier films Expired - Fee Related US7727601B2 (en)

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US11/693,022 US7727601B2 (en) 1999-10-25 2007-03-29 Method for edge sealing barrier films
US12/345,787 US20090191342A1 (en) 1999-10-25 2008-12-30 Method for edge sealing barrier films
US12/345,912 US20090208754A1 (en) 2001-09-28 2008-12-30 Method for edge sealing barrier films
US12/758,244 US20100193468A1 (en) 1999-10-25 2010-04-12 Method for edge sealing barrier films

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US09/427,138 US6522067B1 (en) 1998-12-16 1999-10-25 Environmental barrier material for organic light emitting device and method of making
US09/966,163 US6866901B2 (en) 1999-10-25 2001-09-28 Method for edge sealing barrier films
US11/068,356 US20050176181A1 (en) 1999-10-25 2005-02-28 Method for edge sealing barrier films
US11/112,860 US7198832B2 (en) 1999-10-25 2005-04-22 Method for edge sealing barrier films
US11/693,022 US7727601B2 (en) 1999-10-25 2007-03-29 Method for edge sealing barrier films

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US12/758,244 Division US20100193468A1 (en) 1999-10-25 2010-04-12 Method for edge sealing barrier films

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Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7420208B2 (en) 2001-06-20 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US20080305360A1 (en) * 2007-06-05 2008-12-11 Dong-Won Han Organic light emitting device and method of manufacturing the same
WO2009017032A1 (en) 2007-07-31 2009-02-05 Sumitomo Chemical Company, Limited Substrate having barrier layer, display element and display element manufacturing method
WO2009055529A1 (en) * 2007-10-25 2009-04-30 Applied Materials, Inc. Method for high volume manufacturing of thin film batteries
WO2009061704A2 (en) * 2007-11-06 2009-05-14 Hcf Partners, L.P. Atomic layer deposition encapsulation
WO2009134211A1 (en) * 2008-04-29 2009-11-05 Agency For Science, Technology And Research Inorganic graded barrier film and methods for their manufacture
WO2010011390A2 (en) * 2008-05-07 2010-01-28 The Trustees Of Princeton University Hybrid layers for use in coatings on electronic devices or other articles
US20100031997A1 (en) * 2008-08-11 2010-02-11 Basol Bulent M Flexible thin film photovoltaic modules and manufacturing the same
US7675074B2 (en) 2002-05-15 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device including a lamination layer
US20100090655A1 (en) * 2008-10-08 2010-04-15 Keating Joseph A Environmentally-Powered Wireless Sensor Module
US7728326B2 (en) 2001-06-20 2010-06-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
WO2010078405A1 (en) * 2008-12-30 2010-07-08 Vitex Systems, Inc. Method of making an edge-sealed, encapsulated environmentally sensitive device
US20100224859A1 (en) * 2007-10-16 2010-09-09 Hcf Partners, Lp Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots
US20100297474A1 (en) * 2007-11-06 2010-11-25 Hcf Partners, Lp. Atomic Layer Deposition Process
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20110198620A1 (en) * 2009-12-31 2011-08-18 Samsung Mobile Display Co., Ltd. Barrier film composite and display apparatus including the barrier film composite
US20110212304A1 (en) * 2009-12-31 2011-09-01 Samsung Mobile Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US20110210344A1 (en) * 2009-12-31 2011-09-01 Samsung Mobile Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8062708B2 (en) 2006-09-29 2011-11-22 Infinite Power Solutions, Inc. Masking of and material constraint for depositing battery layers on flexible substrates
US20120132953A1 (en) * 2009-03-24 2012-05-31 Dirk Becker Thin-Layer Encapsulation for an Optoelectronic Component, Method for the Production Thereof, and Optoelectronic Component
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8260203B2 (en) 2008-09-12 2012-09-04 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US8599572B2 (en) 2009-09-01 2013-12-03 Infinite Power Solutions, Inc. Printed circuit board with integrated thin film battery
CN103427040A (en) * 2012-05-23 2013-12-04 海洋王照明科技股份有限公司 Organic electroluminescent device and production method thereof
US8636876B2 (en) 2004-12-08 2014-01-28 R. Ernest Demaray Deposition of LiCoO2
CN103718649A (en) * 2011-08-04 2014-04-09 3M创新有限公司 Edge protected barrier assemblies
CN103733726A (en) * 2011-08-04 2014-04-16 3M创新有限公司 Edge protected barrier assemblies
CN103733725A (en) * 2011-08-04 2014-04-16 3M创新有限公司 Barrier assemblies
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US8906523B2 (en) 2008-08-11 2014-12-09 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US20150176416A1 (en) * 2013-12-19 2015-06-25 Robert Bosch Gmbh Method for Producing a Rotor Wheel and a Rotor
TWI490953B (en) * 2008-12-30 2015-07-01 Samsung Display Co Ltd Edge-sealed, encapsulated environmentally sensitive device and method of making the same
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9337446B2 (en) 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
US9614113B2 (en) 2011-08-04 2017-04-04 3M Innovative Properties Company Edge protected barrier assemblies
US9634296B2 (en) 2002-08-09 2017-04-25 Sapurast Research Llc Thin film battery on an integrated circuit or circuit board and method thereof
TWI581446B (en) * 2011-08-04 2017-05-01 3M新設資產公司 Method of making delamination resistant assemblies
US9839940B2 (en) 2002-04-15 2017-12-12 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US10217961B2 (en) 2015-12-22 2019-02-26 Samsung Display Co., Ltd. Method of manufacturing display apparatus and display apparatus manufactured using the same
US10680277B2 (en) 2010-06-07 2020-06-09 Sapurast Research Llc Rechargeable, high-density electrochemical device
US10950821B2 (en) 2007-01-26 2021-03-16 Samsung Display Co., Ltd. Method of encapsulating an environmentally sensitive device

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070196682A1 (en) * 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
EP1492387A1 (en) * 2002-03-29 2004-12-29 Pioneer Corporation Organic electroluminescence display panel
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7510913B2 (en) * 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US20070020451A1 (en) * 2005-07-20 2007-01-25 3M Innovative Properties Company Moisture barrier coatings
US7829147B2 (en) * 2005-08-18 2010-11-09 Corning Incorporated Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device
US7722929B2 (en) * 2005-08-18 2010-05-25 Corning Incorporated Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device
US20070040501A1 (en) 2005-08-18 2007-02-22 Aitken Bruce G Method for inhibiting oxygen and moisture degradation of a device and the resulting device
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US20080006819A1 (en) * 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
KR100906284B1 (en) * 2007-11-02 2009-07-06 주식회사 실트론 Semiconductor single crystal growth method improved in oxygen concentration characteristics
US20090139567A1 (en) * 2007-11-29 2009-06-04 Philip Chihchau Liu Conformal protective coating for solar panel
KR100832847B1 (en) * 2007-12-21 2008-05-28 (주)누리셀 Multi layer for encapsulation comprising a planarizing organic thin layer and a comformal organic thin layer
EP2091096A1 (en) * 2008-02-15 2009-08-19 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Encapsulated electronic device and method of manufacturing
US20110032704A1 (en) * 2008-04-08 2011-02-10 Sang Keun Oh Lighting display apparatus and the method for manufacturing the same
JP2010087339A (en) * 2008-10-01 2010-04-15 Fujifilm Corp Organic solar cell element
TWI360862B (en) * 2008-10-31 2012-03-21 Ind Tech Res Inst Methods of forming gas barriers on electronic devi
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
US8823154B2 (en) * 2009-05-08 2014-09-02 The Regents Of The University Of California Encapsulation architectures for utilizing flexible barrier films
KR101791580B1 (en) 2009-10-17 2017-10-30 삼성전자주식회사 An optical component, products including same, and methods for making same
US8590338B2 (en) * 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
EP2383817A1 (en) 2010-04-29 2011-11-02 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Light-emitting device and method for manufacturing the same
US20150027533A1 (en) * 2011-08-04 2015-01-29 3M Innovative Properties Company Edge protected barrier assemblies
JP2013122903A (en) * 2011-11-10 2013-06-20 Nitto Denko Corp Organic el device and method for manufacturing the same
KR101900362B1 (en) 2012-01-16 2018-11-09 삼성디스플레이 주식회사 Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus
KR20130089039A (en) 2012-02-01 2013-08-09 삼성디스플레이 주식회사 Deposition source, deposition apparatus and method of manufacturing organic light emitting display apparatus
US8891222B2 (en) 2012-02-14 2014-11-18 Danfoss A/S Capacitive transducer and a method for manufacturing a transducer
US8692442B2 (en) 2012-02-14 2014-04-08 Danfoss Polypower A/S Polymer transducer and a connector for a transducer
US20130240232A1 (en) * 2012-03-15 2013-09-19 Danfoss Polypower A/S Stretchable protection cover
KR101937258B1 (en) 2012-09-04 2019-01-11 삼성디스플레이 주식회사 Organic light emitting display apparatus
US8957579B2 (en) 2012-09-14 2015-02-17 Universal Display Corporation Low image sticking OLED display
KR101980231B1 (en) * 2012-09-18 2019-05-21 삼성디스플레이 주식회사 Flat display device including thin film encapsulation and the manufacturing method thereof
US8912018B2 (en) 2012-12-17 2014-12-16 Universal Display Corporation Manufacturing flexible organic electronic devices
CN104051357B (en) 2013-03-15 2017-04-12 财团法人工业技术研究院 Environmentally sensitive electronic device and packaging method thereof
KR102133433B1 (en) * 2013-05-24 2020-07-14 삼성디스플레이 주식회사 TFT substrate including barrier layer including silicon oxide layer and silicon silicon nitride layer, Organic light-emitting device comprising the TFT substrate, and the manufacturing method of the TFT substrate
US20140370228A1 (en) * 2013-06-13 2014-12-18 Industrial Technology Research Institute Substrate structure
US9241872B2 (en) 2013-06-28 2016-01-26 Eastman Kodak Company Timed sequence indicators
JP6374188B2 (en) * 2014-03-14 2018-08-15 東京エレクトロン株式会社 Method for forming sealing structure, manufacturing apparatus for sealing structure, manufacturing method for organic EL element structure, and manufacturing apparatus therefor
TWM512870U (en) 2014-07-11 2015-11-21 Ind Tech Res Inst Substrate structure and electric device employing the same
US9909022B2 (en) 2014-07-25 2018-03-06 Kateeva, Inc. Organic thin film ink compositions and methods
US9594287B2 (en) * 2014-08-24 2017-03-14 Royole Corporation Substrate-less flexible display and method of manufacturing the same
US10573856B2 (en) * 2015-05-14 2020-02-25 GM Global Technology Operations LLC Barrier layer coatings for battery pouch cell seal
WO2017039857A1 (en) 2015-08-31 2017-03-09 Kateeva, Inc. Di- and mono(meth)acrylate based organic thin film ink compositions
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
KR102550694B1 (en) * 2016-07-12 2023-07-04 삼성디스플레이 주식회사 Flexible display device and method for manufacturing the same
US11751426B2 (en) 2016-10-18 2023-09-05 Universal Display Corporation Hybrid thin film permeation barrier and method of making the same
JP7144864B2 (en) 2017-04-21 2022-09-30 カティーバ, インコーポレイテッド Compositions and techniques for forming organic thin films
CN208478316U (en) * 2018-06-08 2019-02-05 汉能新材料科技有限公司 Thin-film package device and solar battery
US11085111B2 (en) 2018-10-11 2021-08-10 The Boeing Company Laminate composite structural components and methods for the same
US10923680B2 (en) 2018-10-11 2021-02-16 The Boeing Company Multifunctional composite panels and methods for the same
CN110048017A (en) * 2019-04-01 2019-07-23 深圳市华星光电半导体显示技术有限公司 The packaging method of display panel and display panel
KR20200119454A (en) 2019-04-09 2020-10-20 삼성디스플레이 주식회사 Display apparatus and method of manufacturing the same
US11539088B2 (en) 2020-03-09 2022-12-27 International Business Machines Corporation Ultra-thin microbattery packaging and handling
KR102247137B1 (en) * 2020-04-24 2021-05-04 에스케이이노베이션 주식회사 Window cover film and flexible display panel including the same
US11522243B2 (en) 2020-12-21 2022-12-06 International Business Machines Corporation Hermetic packaging of a micro-battery device

Citations (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496427A (en) * 1966-01-13 1970-02-17 Gen Electric Semiconductor device with composite encapsulation
US3661117A (en) * 1969-12-03 1972-05-09 Stanford Research Inst Apparatus for depositing thin lines
US4843036A (en) * 1987-06-29 1989-06-27 Eastman Kodak Company Method for encapsulating electronic devices
US5578141A (en) * 1993-07-01 1996-11-26 Canon Kabushiki Kaisha Solar cell module having excellent weather resistance
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5736207A (en) * 1994-10-27 1998-04-07 Schott Glaswerke Vessel of plastic having a barrier coating and a method of producing the vessel
US5821138A (en) * 1995-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding
US5861658A (en) * 1996-10-03 1999-01-19 International Business Machines Corporation Inorganic seal for encapsulation of an organic layer and method for making the same
US6004660A (en) * 1998-03-12 1999-12-21 E.I. Du Pont De Nemours And Company Oxygen barrier composite film structure
US6137221A (en) * 1998-07-08 2000-10-24 Agilent Technologies, Inc. Organic electroluminescent device with full color characteristics
US6264747B1 (en) * 1995-03-20 2001-07-24 3M Innovative Properties Company Apparatus for forming multicolor interference coating
US6268695B1 (en) * 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
US20010044035A1 (en) * 2000-03-21 2001-11-22 Seika Epson Corporation Organic EL element and method of manufacturing the same
US20020015818A1 (en) * 2000-05-08 2002-02-07 Futaba Denshi Kogyo Kabushiki Kaisha Organic EL element
US6387732B1 (en) * 1999-06-18 2002-05-14 Micron Technology, Inc. Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby
US20030045021A1 (en) * 2001-08-30 2003-03-06 Tomonori Akai Production method for organic electroluminescent device
US20030117068A1 (en) * 2001-12-20 2003-06-26 Stephen Forrest Organic optoelectronic device structures
US20030134487A1 (en) * 2002-01-15 2003-07-17 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
US6660409B1 (en) * 1999-09-16 2003-12-09 Panasonic Communications Co., Ltd Electronic device and process for producing the same
US6737753B2 (en) * 2001-09-28 2004-05-18 Osram Opto Semiconductor Gmbh Barrier stack
US20040187999A1 (en) * 2002-12-27 2004-09-30 Wilkinson Matthew C. Method for encapsulation of light emitting polymer devices and apparatus made by same
US6803245B2 (en) * 2001-09-28 2004-10-12 Osram Opto Semiconductors Gmbh Procedure for encapsulation of electronic devices
US6827788B2 (en) * 2000-12-27 2004-12-07 Anelva Corporation Substrate processing device and through-chamber
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US20050115603A1 (en) * 2003-11-28 2005-06-02 Sharp Kabushiki Kaisha Solar cell module edge face sealing member and solar cell module employing same
US20050202646A1 (en) * 1999-10-25 2005-09-15 Burrows Paul E. Method for edge sealing barrier films
US20050224935A1 (en) * 2004-04-02 2005-10-13 Marc Schaepkens Organic electronic packages having hermetically sealed edges and methods of manufacturing such packages
US20060001040A1 (en) * 2004-06-30 2006-01-05 General Electric Company High integrity protective coatings
US6994933B1 (en) * 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
US20060132461A1 (en) * 2004-11-08 2006-06-22 Kyodo Printing Co., Ltd. Flexible display and manufacturing method thereof
US7122418B2 (en) * 2002-10-04 2006-10-17 Au Optronics Corporation Method of fabricating organic light emitting diode device
US20060291034A1 (en) * 2005-06-23 2006-12-28 E Ink Corporation Edge seals for, and processes for assembly of, electro-optic displays
US7166007B2 (en) * 1999-12-17 2007-01-23 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
US7183197B2 (en) * 2004-06-25 2007-02-27 Applied Materials, Inc. Water-barrier performance of an encapsulating film
US7221093B2 (en) * 2002-06-10 2007-05-22 Institute Of Materials Research And Engineering Patterning of electrodes in OLED devices
US7255823B1 (en) * 2000-09-06 2007-08-14 Institute Of Materials Research And Engineering Encapsulation for oled devices
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US20080032076A1 (en) * 2004-12-27 2008-02-07 Cfs Kempten Gmbh Shrinkable Multilayered Film Comprising a Release Layer
US20090258235A1 (en) * 2008-04-14 2009-10-15 Tomomi Tateishi Barrier laminate, barrier film substrate and device
US7621794B2 (en) * 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device

Family Cites Families (240)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2382432A (en) 1940-08-02 1945-08-14 Crown Cork & Seal Co Method and apparatus for depositing vaporized metal coatings
US2384500A (en) 1942-07-08 1945-09-11 Crown Cork & Seal Co Apparatus and method of coating
US3475307A (en) 1965-02-04 1969-10-28 Continental Can Co Condensation of monomer vapors to increase polymerization rates in a glow discharge
FR1393629A (en) 1965-09-13 1965-03-26 Continental Oil Co Method and apparatus for coating solid sheets
US3607365A (en) 1969-05-12 1971-09-21 Minnesota Mining & Mfg Vapor phase method of coating substrates with polymeric coating
US3941630A (en) 1974-04-29 1976-03-02 Rca Corporation Method of fabricating a charged couple radiation sensing device
US4055530A (en) * 1975-02-27 1977-10-25 Standard Oil Company (Indiana) Aqueous dispersion of addition polymer of an alpha-beta-ethylenically unsaturated monomer and suspended polypropylene particles
US4098965A (en) * 1977-01-24 1978-07-04 Polaroid Corporation Flat batteries and method of making the same
JPS5925215Y2 (en) * 1978-06-10 1984-07-25 ワイケイケイ株式会社 Slide fastener tape
US4266223A (en) * 1978-12-08 1981-05-05 W. H. Brady Co. Thin panel display
JPS55129345A (en) 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development
US4313254A (en) 1979-10-30 1982-02-02 The Johns Hopkins University Thin-film silicon solar cell with metal boride bottom electrode
US4581337A (en) * 1983-07-07 1986-04-08 E. I. Du Pont De Nemours And Company Polyether polyamines as linking agents for particle reagents useful in immunoassays
US4426275A (en) * 1981-11-27 1984-01-17 Deposition Technology, Inc. Sputtering device adaptable for coating heat-sensitive substrates
JPS58156848A (en) * 1982-03-15 1983-09-17 Fuji Photo Film Co Ltd Ion selective electrode and its manufacture
JPS59138440A (en) * 1983-01-27 1984-08-08 豊田合成株式会社 Resin shape with ceramics coating layer
US4521458A (en) * 1983-04-01 1985-06-04 Nelson Richard C Process for coating material with water resistant composition
DE3324106A1 (en) * 1983-07-05 1985-01-17 Draiswerke Gmbh, 6800 Mannheim METHOD FOR GLUING WOOD CHIPS AND THE LIKE WITH LIQUID GLUE AND DEVICE FOR CARRYING OUT THE METHOD
US4710426A (en) * 1983-11-28 1987-12-01 Polaroid Corporation, Patent Dept. Solar radiation-control articles with protective overlayer
US4557978A (en) * 1983-12-12 1985-12-10 Primary Energy Research Corporation Electroactive polymeric thin films
US4842893A (en) * 1983-12-19 1989-06-27 Spectrum Control, Inc. High speed process for coating substrates
US5032461A (en) 1983-12-19 1991-07-16 Spectrum Control, Inc. Method of making a multi-layered article
DE3571772D1 (en) * 1984-03-21 1989-08-31 Ulvac Corp Improvements in or relating to the covering of substrates with synthetic resin films
DE3427057A1 (en) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart SYSTEM FOR THE PRODUCTION OF SEMICONDUCTOR LAYER STRUCTURES BY EPITACTIC GROWTH
US4722515A (en) * 1984-11-06 1988-02-02 Spectrum Control, Inc. Atomizing device for vaporization
US4695618A (en) * 1986-05-23 1987-09-22 Ameron, Inc. Solventless polyurethane spray compositions and method for applying them
US4954371A (en) 1986-06-23 1990-09-04 Spectrum Control, Inc. Flash evaporation of monomer fluids
DE3707214A1 (en) * 1987-03-06 1988-09-15 Hoechst Ag COATED PLASTIC FILM AND PLASTIC LAMINATE MADE THEREOF
US4768666A (en) * 1987-05-26 1988-09-06 Milton Kessler Tamper proof container closure
US4847469A (en) 1987-07-15 1989-07-11 The Boc Group, Inc. Controlled flow vaporizer
JPH0193129A (en) * 1987-10-02 1989-04-12 Mitsubishi Electric Corp Chemical vapor growth device
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
US4977013A (en) * 1988-06-03 1990-12-11 Andus Corporation Tranparent conductive coatings
JP2742057B2 (en) * 1988-07-14 1998-04-22 シャープ株式会社 Thin film EL panel
US4889609A (en) 1988-09-06 1989-12-26 Ovonic Imaging Systems, Inc. Continuous dry etching system
US5189405A (en) * 1989-01-26 1993-02-23 Sharp Kabushiki Kaisha Thin film electroluminescent panel
JP2678055B2 (en) 1989-03-30 1997-11-17 シャープ株式会社 Manufacturing method of organic compound thin film
US5792550A (en) 1989-10-24 1998-08-11 Flex Products, Inc. Barrier film having high colorless transparency and method
US5047131A (en) 1989-11-08 1991-09-10 The Boc Group, Inc. Method for coating substrates with silicon based compounds
US5036249A (en) 1989-12-11 1991-07-30 Molex Incorporated Electroluminescent lamp panel and method of fabricating same
CA2038117A1 (en) * 1990-03-29 1991-09-30 Mahfuza B. Ali Controllable radiation curable photoiniferter prepared adhesives for attachment of microelectronic devices and a method of attaching microelectronic devices therewith
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5059861A (en) * 1990-07-26 1991-10-22 Eastman Kodak Company Organic electroluminescent device with stabilizing cathode capping layer
FR2666190B1 (en) * 1990-08-24 1996-07-12 Thomson Csf METHOD AND DEVICE FOR HERMETIC ENCAPSULATION OF ELECTRONIC COMPONENTS.
JP2755844B2 (en) 1991-09-30 1998-05-25 シャープ株式会社 Plastic substrate liquid crystal display
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
US5372851A (en) 1991-12-16 1994-12-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a chemically adsorbed film
US5203898A (en) * 1991-12-16 1993-04-20 Corning Incorporated Method of making fluorine/boron doped silica tubes
US5759329A (en) * 1992-01-06 1998-06-02 Pilot Industries, Inc. Fluoropolymer composite tube and method of preparation
US5393607A (en) * 1992-01-13 1995-02-28 Mitsui Toatsu Chemiclas, Inc. Laminated transparent plastic material and polymerizable monomer
US5402314A (en) * 1992-02-10 1995-03-28 Sony Corporation Printed circuit board having through-hole stopped with photo-curable solder resist
JP3203623B2 (en) * 1992-03-06 2001-08-27 ソニー株式会社 Organic electrolyte battery
JP2958186B2 (en) 1992-04-20 1999-10-06 シャープ株式会社 Plastic substrate liquid crystal display
US5427638A (en) * 1992-06-04 1995-06-27 Alliedsignal Inc. Low temperature reaction bonding
US5652192A (en) * 1992-07-10 1997-07-29 Battelle Memorial Institute Catalyst material and method of making
GB9215928D0 (en) * 1992-07-27 1992-09-09 Cambridge Display Tech Ltd Manufacture of electroluminescent devices
US5260095A (en) 1992-08-21 1993-11-09 Battelle Memorial Institute Vacuum deposition and curing of liquid monomers
DE4232390A1 (en) 1992-09-26 1994-03-31 Roehm Gmbh Process for producing silicon oxide scratch-resistant layers on plastics by plasma coating
JPH06182935A (en) 1992-12-18 1994-07-05 Bridgestone Corp Gas barrier rubber laminate and manufacture thereof
EP0608620B1 (en) * 1993-01-28 1996-08-14 Applied Materials, Inc. Vacuum Processing apparatus having improved throughput
GB9311092D0 (en) 1993-01-28 1993-07-14 Du Pont Int Extrusion process
DE69426227T2 (en) * 1993-05-17 2001-03-29 Kyoei Automatic Control Techno Measurement of a dynamic weight with a positively moved base plate
US5510173A (en) * 1993-08-20 1996-04-23 Southwall Technologies Inc. Multiple layer thin films with improved corrosion resistance
JP3183759B2 (en) 1993-08-26 2001-07-09 株式会社三協精機製作所 Load measuring device
US5440446A (en) 1993-10-04 1995-08-08 Catalina Coatings, Inc. Acrylate coating material
BR9407741A (en) 1993-10-04 1997-02-12 Catalina Coatings Inc Acrylate coating
US20040241454A1 (en) 1993-10-04 2004-12-02 Shaw David G. Barrier sheet and method of making same
US5451449A (en) * 1994-05-11 1995-09-19 The Mearl Corporation Colored iridescent film
US5934856A (en) 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
US5795399A (en) 1994-06-30 1998-08-18 Kabushiki Kaisha Toshiba Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product
US5654084A (en) 1994-07-22 1997-08-05 Martin Marietta Energy Systems, Inc. Protective coatings for sensitive materials
US5464667A (en) 1994-08-16 1995-11-07 Minnesota Mining And Manufacturing Company Jet plasma process and apparatus
TW295677B (en) 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
JP3274292B2 (en) * 1994-09-30 2002-04-15 富士写真フイルム株式会社 Storage case for cassette
US6083628A (en) * 1994-11-04 2000-07-04 Sigma Laboratories Of Arizona, Inc. Hybrid polymer film
US5607789A (en) * 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
US5620524A (en) * 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US5811183A (en) 1995-04-06 1998-09-22 Shaw; David G. Acrylate polymer release coated sheet materials and method of production thereof
GB9507862D0 (en) 1995-04-18 1995-05-31 Cambridge Display Tech Ltd Fabrication of organic light-emitting devices
US5771562A (en) * 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
US5554220A (en) 1995-05-19 1996-09-10 The Trustees Of Princeton University Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
US5629389A (en) * 1995-06-06 1997-05-13 Hewlett-Packard Company Polymer-based electroluminescent device with improved stability
CZ415997A3 (en) 1995-06-30 1998-04-15 Commonwealth Scientific And Industrial Research Organisation Method of improving surface of a polymer
US5681615A (en) 1995-07-27 1997-10-28 Battelle Memorial Institute Vacuum flash evaporated polymer composites
DE19603746A1 (en) 1995-10-20 1997-04-24 Bosch Gmbh Robert Electroluminescent layer system
US5811177A (en) 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
US5684084A (en) 1995-12-21 1997-11-04 E. I. Du Pont De Nemours And Company Coating containing acrylosilane polymer to improve mar and acid etch resistance
US6195142B1 (en) * 1995-12-28 2001-02-27 Matsushita Electrical Industrial Company, Ltd. Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element
US5660961A (en) * 1996-01-11 1997-08-26 Xerox Corporation Electrophotographic imaging member having enhanced layer adhesion and freedom from reflection interference
US5955161A (en) 1996-01-30 1999-09-21 Becton Dickinson And Company Blood collection tube assembly
US5683771A (en) * 1996-01-30 1997-11-04 Becton, Dickinson And Company Blood collection tube assembly
US6106627A (en) 1996-04-04 2000-08-22 Sigma Laboratories Of Arizona, Inc. Apparatus for producing metal coated polymers
US5731948A (en) 1996-04-04 1998-03-24 Sigma Labs Inc. High energy density capacitor
US5731661A (en) * 1996-07-15 1998-03-24 Motorola, Inc. Passivation of electroluminescent organic devices
US5902688A (en) * 1996-07-16 1999-05-11 Hewlett-Packard Company Electroluminescent display device
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
US5844363A (en) 1997-01-23 1998-12-01 The Trustees Of Princeton Univ. Vacuum deposited, non-polymeric flexible organic light emitting devices
US5948552A (en) 1996-08-27 1999-09-07 Hewlett-Packard Company Heat-resistant organic electroluminescent device
US5895228A (en) * 1996-11-14 1999-04-20 International Business Machines Corporation Encapsulation of organic light emitting devices using Siloxane or Siloxane derivatives
US5821692A (en) 1996-11-26 1998-10-13 Motorola, Inc. Organic electroluminescent device hermetic encapsulation package
US5912069A (en) * 1996-12-19 1999-06-15 Sigma Laboratories Of Arizona Metal nanolaminate composite
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
US5872355A (en) * 1997-04-09 1999-02-16 Hewlett-Packard Company Electroluminescent device and fabrication method for a light detection system
JP3290375B2 (en) * 1997-05-12 2002-06-10 松下電器産業株式会社 Organic electroluminescent device
US5920080A (en) 1997-06-23 1999-07-06 Fed Corporation Emissive display using organic light emitting diodes
US6198220B1 (en) * 1997-07-11 2001-03-06 Emagin Corporation Sealing structure for organic light emitting devices
FR2766200B1 (en) 1997-07-17 1999-09-24 Toray Plastics Europ Sa METAL COMPOSITE POLYESTER FILMS WITH BARRIER PROPERTIES
US6203898B1 (en) * 1997-08-29 2001-03-20 3M Innovatave Properties Company Article comprising a substrate having a silicone coating
US6224948B1 (en) * 1997-09-29 2001-05-01 Battelle Memorial Institute Plasma enhanced chemical deposition with low vapor pressure compounds
US5965907A (en) 1997-09-29 1999-10-12 Motorola, Inc. Full color organic light emitting backlight device for liquid crystal display applications
US5902641A (en) * 1997-09-29 1999-05-11 Battelle Memorial Institute Flash evaporation of liquid monomer particle mixture
DE69813144T2 (en) 1997-11-07 2003-12-04 Rohm & Haas Plastic substrates for use in electronic display systems
EP0916394B1 (en) 1997-11-14 2004-03-10 Sharp Kabushiki Kaisha Method of manufacturing modified particles and manufacturing device therefor
KR100249784B1 (en) 1997-11-20 2000-04-01 정선종 Encapsulation of the polymeric or organic light light emitting device using multiple polymer layers
US6013538A (en) * 1997-11-24 2000-01-11 The Trustees Of Princeton University Method of fabricating and patterning OLEDs
DE69830198T2 (en) 1997-12-31 2006-02-23 Kimberly-Clark Worldwide, Inc., Neenah BREATHABLE FILMS WITH MICROSCREENS OF DECOMPOSABLE PLASTICS AND THERMOPLASTIC ELASTOMERS
DE19802740A1 (en) 1998-01-26 1999-07-29 Leybold Systems Gmbh Process for treating surfaces of plastic substrates
US5996498A (en) 1998-03-12 1999-12-07 Presstek, Inc. Method of lithographic imaging with reduced debris-generated performance degradation and related constructions
US6066826A (en) * 1998-03-16 2000-05-23 Yializis; Angelo Apparatus for plasma treatment of moving webs
GB2335884A (en) 1998-04-02 1999-10-06 Cambridge Display Tech Ltd Flexible substrates for electronic or optoelectronic devices
US6146462A (en) 1998-05-08 2000-11-14 Astenjohnson, Inc. Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same
US6146225A (en) 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
JP4267097B2 (en) 1998-08-24 2009-05-27 特許機器株式会社 Piping holding structure for seismic isolation structures
US6040017A (en) * 1998-10-02 2000-03-21 Sigma Laboratories, Inc. Formation of multilayered photonic polymer composites
WO2000026973A1 (en) 1998-11-02 2000-05-11 Presstek, Inc. Transparent conductive oxides for plastic flat panel displays
US6837950B1 (en) * 1998-11-05 2005-01-04 Interface, Inc. Separation of floor covering components for recycling
US6274204B1 (en) 1998-12-16 2001-08-14 Battelle Memorial Institute Method of making non-linear optical polymer
US6207239B1 (en) * 1998-12-16 2001-03-27 Battelle Memorial Institute Plasma enhanced chemical deposition of conjugated polymer
US6228434B1 (en) * 1998-12-16 2001-05-08 Battelle Memorial Institute Method of making a conformal coating of a microtextured surface
TW439308B (en) 1998-12-16 2001-06-07 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
US6217947B1 (en) * 1998-12-16 2001-04-17 Battelle Memorial Institute Plasma enhanced polymer deposition onto fixtures
US6228436B1 (en) 1998-12-16 2001-05-08 Battelle Memorial Institute Method of making light emitting polymer composite material
US6207238B1 (en) * 1998-12-16 2001-03-27 Battelle Memorial Institute Plasma enhanced chemical deposition for high and/or low index of refraction polymers
JP3817081B2 (en) * 1999-01-29 2006-08-30 パイオニア株式会社 Manufacturing method of organic EL element
US6118218A (en) 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
US6440277B1 (en) 1999-03-10 2002-08-27 American Bank Note Holographic Techniques of printing micro-structure patterns such as holograms directly onto final documents or other substrates in discrete areas thereof
US6358570B1 (en) * 1999-03-31 2002-03-19 Battelle Memorial Institute Vacuum deposition and curing of oligomers and resins
TW463528B (en) * 1999-04-05 2001-11-11 Idemitsu Kosan Co Organic electroluminescence element and their preparation
ID30404A (en) 1999-04-28 2001-11-29 Du Pont FLEXIBLE ORGANIC ELECTRONIC DEVICES WITH RESISTANCE FOR BETTER OXYGEN AND WATER
JP4261680B2 (en) * 1999-05-07 2009-04-30 株式会社クレハ Moisture-proof multilayer film
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US20020036297A1 (en) 2000-02-04 2002-03-28 Karl Pichler Low absorption sputter protection layer for OLED structure
US6492026B1 (en) 2000-04-20 2002-12-10 Battelle Memorial Institute Smoothing and barrier layers on high Tg substrates
US6465953B1 (en) 2000-06-12 2002-10-15 General Electric Company Plastic substrates with improved barrier properties for devices sensitive to water and/or oxygen, such as organic electroluminescent devices
US6867539B1 (en) * 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
US7094690B1 (en) 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
CN1341644A (en) 2000-09-07 2002-03-27 上海博德基因开发有限公司 A novel polypeptide-human heterogeneous nuclear-nucleoprotein 32.01 and polynucleotide for coding said polypeptide
CA2357324A1 (en) * 2000-09-15 2002-03-15 James D. Huggins Continuous feed coater
JP2002100469A (en) * 2000-09-25 2002-04-05 Pioneer Electronic Corp Organic electroluminescence display panel
US6537688B2 (en) * 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6541098B2 (en) 2000-12-22 2003-04-01 Avery Dennison Corporation Three-dimensional flexible adhesive film structures
CN100430515C (en) 2001-02-01 2008-11-05 株式会社半导体能源研究所 Sediment appts. and sediment method
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
WO2002071506A1 (en) 2001-02-15 2002-09-12 Emagin Corporation Thin film encapsulation of organic light emitting diode devices
US6576351B2 (en) * 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6822391B2 (en) * 2001-02-21 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic equipment, and method of manufacturing thereof
US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
TWI222838B (en) * 2001-04-10 2004-10-21 Chi Mei Optoelectronics Corp Packaging method of organic electroluminescence light-emitting display device
JP2002343580A (en) 2001-05-11 2002-11-29 Pioneer Electronic Corp Light-emitting display device and its manufacturing method
JP3678361B2 (en) 2001-06-08 2005-08-03 大日本印刷株式会社 Gas barrier film
US6397776B1 (en) * 2001-06-11 2002-06-04 General Electric Company Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
CA2352567A1 (en) * 2001-07-06 2003-01-06 Mohamed Latreche Translucent material displaying ultra-low transport of gases and vapors, and method for its production
KR100413450B1 (en) 2001-07-20 2003-12-31 엘지전자 주식회사 protecting film structure for display device
KR20040027940A (en) * 2001-08-20 2004-04-01 노바-플라즈마 인크. Coatings with low permeation of gases and vapors
US6888307B2 (en) * 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
TW519853B (en) * 2001-10-17 2003-02-01 Chi Mei Electronic Corp Organic electro-luminescent display and its packaging method
US6888305B2 (en) * 2001-11-06 2005-05-03 Universal Display Corporation Encapsulation structure that acts as a multilayer mirror
US6597111B2 (en) * 2001-11-27 2003-07-22 Universal Display Corporation Protected organic optoelectronic devices
US6681716B2 (en) * 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
US6948448B2 (en) * 2001-11-27 2005-09-27 General Electric Company Apparatus and method for depositing large area coatings on planar surfaces
KR100472502B1 (en) 2001-12-26 2005-03-08 삼성에스디아이 주식회사 Organic electro luminescence display device
US7012363B2 (en) * 2002-01-10 2006-03-14 Universal Display Corporation OLEDs having increased external electroluminescence quantum efficiencies
US6936131B2 (en) 2002-01-31 2005-08-30 3M Innovative Properties Company Encapsulation of organic electronic devices using adsorbent loaded adhesives
JP2003253434A (en) * 2002-03-01 2003-09-10 Sanyo Electric Co Ltd Vapor deposition method, and method for manufacturing display device
JP2003258189A (en) * 2002-03-01 2003-09-12 Toshiba Corp Semiconductor device and method of manufacturing the same
JP2003272827A (en) * 2002-03-13 2003-09-26 Matsushita Electric Ind Co Ltd Organic light emitting element, and manufacturing method of the same
JP4180831B2 (en) 2002-03-25 2008-11-12 パイオニア株式会社 Organic electroluminescence display panel and manufacturing method
JP2003292394A (en) * 2002-03-29 2003-10-15 Canon Inc Liquid phase-growing method and liquid phase-growing apparatus
US6891330B2 (en) * 2002-03-29 2005-05-10 General Electric Company Mechanically flexible organic electroluminescent device with directional light emission
US20050174045A1 (en) 2002-04-04 2005-08-11 Dielectric Systems, Inc. Organic light-emitting device display having a plurality of passive polymer layers
US6835950B2 (en) 2002-04-12 2004-12-28 Universal Display Corporation Organic electronic devices with pressure sensitive adhesive layer
US6897474B2 (en) * 2002-04-12 2005-05-24 Universal Display Corporation Protected organic electronic devices and methods for making the same
US6949389B2 (en) * 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
NL1020635C2 (en) 2002-05-21 2003-11-24 Otb Group Bv Method for manufacturing a polymeric OLED.
NL1020634C2 (en) * 2002-05-21 2003-11-24 Otb Group Bv Method for passivating a semiconductor substrate.
US6743524B2 (en) * 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
KR100477745B1 (en) 2002-05-23 2005-03-18 삼성에스디아이 주식회사 Encapsulation method of organic electro luminescence device and organic electro luminescence panel using the same
DE10230607A1 (en) 2002-07-08 2004-02-05 Abb Patent Gmbh Method for monitoring a measuring device, in particular a flow measuring device, and a measuring device itself
JP4130555B2 (en) 2002-07-18 2008-08-06 住友精密工業株式会社 Gas humidifier
US6734625B2 (en) * 2002-07-30 2004-05-11 Xerox Corporation Organic light emitting device (OLED) with multiple capping layers passivation region on an electrode
US6710542B2 (en) * 2002-08-03 2004-03-23 Agilent Technologies, Inc. Organic light emitting device with improved moisture seal
US6818291B2 (en) 2002-08-17 2004-11-16 3M Innovative Properties Company Durable transparent EMI shielding film
TWI236862B (en) 2002-09-03 2005-07-21 Au Optronics Corp Package for OLED device
US20040229051A1 (en) 2003-05-15 2004-11-18 General Electric Company Multilayer coating package on flexible substrates for electro-optical devices
US7015640B2 (en) * 2002-09-11 2006-03-21 General Electric Company Diffusion barrier coatings having graded compositions and devices incorporating the same
US7056584B2 (en) * 2002-10-11 2006-06-06 General Electric Company Bond layer for coatings on plastic substrates
JP3953404B2 (en) * 2002-10-21 2007-08-08 インターナショナル・ビジネス・マシーンズ・コーポレーション ORGANIC ELECTROLUMINESCENCE ELEMENT, METHOD FOR PRODUCING THE ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE
US20040099926A1 (en) 2002-11-22 2004-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same
US7086918B2 (en) * 2002-12-11 2006-08-08 Applied Materials, Inc. Low temperature process for passivation applications
US7338820B2 (en) * 2002-12-19 2008-03-04 3M Innovative Properties Company Laser patterning of encapsulated organic light emitting diodes
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
NL1022269C2 (en) 2002-12-24 2004-06-25 Otb Group Bv Method for manufacturing an organic electroluminescent display device, substrate for use in such a method, as well as an organic electroluminescent display device obtained with the method.
JP2004224815A (en) 2003-01-20 2004-08-12 Fuji Photo Film Co Ltd Gas-barrier laminated film and its manufacturing method
JP4138672B2 (en) * 2003-03-27 2008-08-27 セイコーエプソン株式会社 Manufacturing method of electro-optical device
JP4491196B2 (en) 2003-03-31 2010-06-30 富士フイルム株式会社 GAS BARRIER LAMINATED FILM, PROCESS FOR PRODUCING THE SAME, AND SUBSTRATE AND IMAGE DISPLAY DEVICE USING THE FILM
US7018713B2 (en) * 2003-04-02 2006-03-28 3M Innovative Properties Company Flexible high-temperature ultrabarrier
US7029765B2 (en) * 2003-04-22 2006-04-18 Universal Display Corporation Organic light emitting devices having reduced pixel shrinkage
ITMI20031281A1 (en) 2003-06-24 2004-12-25 Whirlpool Co DOMESTIC REFRIGERANT APPLIANCE WITH REMOVABLE SHELF SUPPORTS.
NL1024090C2 (en) 2003-08-12 2005-02-15 Otb Group Bv Method for applying a thin film barrier layer assembly to a microstructured device, as well as a device provided with such a thin film barrier layer assembly.
US6998648B2 (en) * 2003-08-25 2006-02-14 Universal Display Corporation Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant
US7282244B2 (en) * 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
US7635525B2 (en) * 2003-09-30 2009-12-22 Fujifilm Corporation Gas barrier laminate film and method for producing the same
US7297414B2 (en) * 2003-09-30 2007-11-20 Fujifilm Corporation Gas barrier film and method for producing the same
US7052355B2 (en) * 2003-10-30 2006-05-30 General Electric Company Organic electro-optic device and method for making the same
US20050093437A1 (en) * 2003-10-31 2005-05-05 Ouyang Michael X. OLED structures with strain relief, antireflection and barrier layers
US7271534B2 (en) 2003-11-04 2007-09-18 3M Innovative Properties Company Segmented organic light emitting device
US7432124B2 (en) * 2003-11-04 2008-10-07 3M Innovative Properties Company Method of making an organic light emitting device
GB0327093D0 (en) 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
US7075103B2 (en) * 2003-12-19 2006-07-11 General Electric Company Multilayer device and method of making
US7792489B2 (en) 2003-12-26 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, electronic appliance, and method for manufacturing light emitting device
JP2005251671A (en) * 2004-03-08 2005-09-15 Fuji Photo Film Co Ltd Display device
US20050238846A1 (en) 2004-03-10 2005-10-27 Fuji Photo Film Co., Ltd. Gas barrier laminate film, method for producing the same and image display device utilizing the film
US20050212419A1 (en) 2004-03-23 2005-09-29 Eastman Kodak Company Encapsulating oled devices
US7033850B2 (en) * 2004-06-30 2006-04-25 Eastman Kodak Company Roll-to-sheet manufacture of OLED materials
US20060063015A1 (en) * 2004-09-23 2006-03-23 3M Innovative Properties Company Protected polymeric film
US7342356B2 (en) 2004-09-23 2008-03-11 3M Innovative Properties Company Organic electroluminescent device having protective structure with boron oxide layer and inorganic barrier layer
US20060198986A1 (en) 2005-03-01 2006-09-07 Keckeisen Michael S Multilayer packaging with peelable coupon
JP2006294780A (en) 2005-04-08 2006-10-26 Toppan Printing Co Ltd Solar cell modules and back seat therefor
EP1719808A3 (en) 2005-05-06 2007-05-30 Eastman Chemical Company Pressure sensitive adhesive laminates
EP1857270B1 (en) 2006-05-17 2013-04-17 Curwood, Inc. Myoglobin blooming agent, films, packages and methods for packaging
US8084102B2 (en) 2007-02-06 2011-12-27 Sion Power Corporation Methods for co-flash evaporation of polymerizable monomers and non-polymerizable carrier solvent/salt mixtures/solutions
NL1033860C2 (en) 2007-05-16 2008-11-18 Otb Group Bv Method for applying a thin film encapsulation layer assembly to an organic device and an organic device provided with a thin film encapsulation layer assembly preferably applied by such a method.
EP2153699B1 (en) 2007-05-18 2016-07-13 Henkel AG & Co. KGaA Organic electronic devices protected by elastomeric laminating adhesive
CN102084515A (en) 2007-05-24 2011-06-01 皇家飞利浦电子股份有限公司 Encapsulation for an electronic thin film device

Patent Citations (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496427A (en) * 1966-01-13 1970-02-17 Gen Electric Semiconductor device with composite encapsulation
US3661117A (en) * 1969-12-03 1972-05-09 Stanford Research Inst Apparatus for depositing thin lines
US4843036A (en) * 1987-06-29 1989-06-27 Eastman Kodak Company Method for encapsulating electronic devices
US5578141A (en) * 1993-07-01 1996-11-26 Canon Kabushiki Kaisha Solar cell module having excellent weather resistance
US5736207A (en) * 1994-10-27 1998-04-07 Schott Glaswerke Vessel of plastic having a barrier coating and a method of producing the vessel
US5821138A (en) * 1995-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding
US6264747B1 (en) * 1995-03-20 2001-07-24 3M Innovative Properties Company Apparatus for forming multicolor interference coating
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5861658A (en) * 1996-10-03 1999-01-19 International Business Machines Corporation Inorganic seal for encapsulation of an organic layer and method for making the same
US6004660A (en) * 1998-03-12 1999-12-21 E.I. Du Pont De Nemours And Company Oxygen barrier composite film structure
US6137221A (en) * 1998-07-08 2000-10-24 Agilent Technologies, Inc. Organic electroluminescent device with full color characteristics
US6268695B1 (en) * 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
US6387732B1 (en) * 1999-06-18 2002-05-14 Micron Technology, Inc. Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby
US6660409B1 (en) * 1999-09-16 2003-12-09 Panasonic Communications Co., Ltd Electronic device and process for producing the same
US20050202646A1 (en) * 1999-10-25 2005-09-15 Burrows Paul E. Method for edge sealing barrier films
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US7166007B2 (en) * 1999-12-17 2007-01-23 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
US20010044035A1 (en) * 2000-03-21 2001-11-22 Seika Epson Corporation Organic EL element and method of manufacturing the same
US20020015818A1 (en) * 2000-05-08 2002-02-07 Futaba Denshi Kogyo Kabushiki Kaisha Organic EL element
US7255823B1 (en) * 2000-09-06 2007-08-14 Institute Of Materials Research And Engineering Encapsulation for oled devices
US6827788B2 (en) * 2000-12-27 2004-12-07 Anelva Corporation Substrate processing device and through-chamber
US20030045021A1 (en) * 2001-08-30 2003-03-06 Tomonori Akai Production method for organic electroluminescent device
US6737753B2 (en) * 2001-09-28 2004-05-18 Osram Opto Semiconductor Gmbh Barrier stack
US6803245B2 (en) * 2001-09-28 2004-10-12 Osram Opto Semiconductors Gmbh Procedure for encapsulation of electronic devices
US20030117068A1 (en) * 2001-12-20 2003-06-26 Stephen Forrest Organic optoelectronic device structures
US20030134487A1 (en) * 2002-01-15 2003-07-17 International Business Machines Corporation Method of forming a planar polymer transistor using substrate bonding techniques
US7221093B2 (en) * 2002-06-10 2007-05-22 Institute Of Materials Research And Engineering Patterning of electrodes in OLED devices
US6994933B1 (en) * 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
US7122418B2 (en) * 2002-10-04 2006-10-17 Au Optronics Corporation Method of fabricating organic light emitting diode device
US20040187999A1 (en) * 2002-12-27 2004-09-30 Wilkinson Matthew C. Method for encapsulation of light emitting polymer devices and apparatus made by same
US20050115603A1 (en) * 2003-11-28 2005-06-02 Sharp Kabushiki Kaisha Solar cell module edge face sealing member and solar cell module employing same
US20050224935A1 (en) * 2004-04-02 2005-10-13 Marc Schaepkens Organic electronic packages having hermetically sealed edges and methods of manufacturing such packages
US7183197B2 (en) * 2004-06-25 2007-02-27 Applied Materials, Inc. Water-barrier performance of an encapsulating film
US20060001040A1 (en) * 2004-06-30 2006-01-05 General Electric Company High integrity protective coatings
US20060132461A1 (en) * 2004-11-08 2006-06-22 Kyodo Printing Co., Ltd. Flexible display and manufacturing method thereof
US20080032076A1 (en) * 2004-12-27 2008-02-07 Cfs Kempten Gmbh Shrinkable Multilayered Film Comprising a Release Layer
US20060291034A1 (en) * 2005-06-23 2006-12-28 E Ink Corporation Edge seals for, and processes for assembly of, electro-optic displays
US7621794B2 (en) * 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US20090258235A1 (en) * 2008-04-14 2009-10-15 Tomomi Tateishi Barrier laminate, barrier film substrate and device

Cited By (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8415660B2 (en) 2001-06-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8134149B2 (en) 2001-06-20 2012-03-13 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device
US7728326B2 (en) 2001-06-20 2010-06-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
US7420208B2 (en) 2001-06-20 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9178168B2 (en) 2001-06-20 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. White light emitting device
US9166180B2 (en) 2001-06-20 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having an organic light emitting diode that emits white light
US20080303408A1 (en) * 2001-06-20 2008-12-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8822982B2 (en) 2001-06-20 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
US20110233557A1 (en) * 2001-06-20 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7952101B2 (en) 2001-06-20 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9276224B2 (en) 2001-06-20 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device having dual flexible substrates
US9839940B2 (en) 2002-04-15 2017-12-12 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US7675074B2 (en) 2002-05-15 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device including a lamination layer
US9118025B2 (en) 2002-05-15 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8476623B2 (en) 2002-05-15 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8129715B2 (en) 2002-05-15 2012-03-06 Semiconductor Energy Labratory Co., Ltd. Light emitting device
US20100156287A1 (en) * 2002-05-15 2010-06-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8659012B2 (en) 2002-05-15 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US9634296B2 (en) 2002-08-09 2017-04-25 Sapurast Research Llc Thin film battery on an integrated circuit or circuit board and method thereof
US9793523B2 (en) 2002-08-09 2017-10-17 Sapurast Research Llc Electrochemical apparatus with barrier layer protected substrate
US8535396B2 (en) 2002-08-09 2013-09-17 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US8636876B2 (en) 2004-12-08 2014-01-28 R. Ernest Demaray Deposition of LiCoO2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US8062708B2 (en) 2006-09-29 2011-11-22 Infinite Power Solutions, Inc. Masking of and material constraint for depositing battery layers on flexible substrates
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US10950821B2 (en) 2007-01-26 2021-03-16 Samsung Display Co., Ltd. Method of encapsulating an environmentally sensitive device
US20080305360A1 (en) * 2007-06-05 2008-12-11 Dong-Won Han Organic light emitting device and method of manufacturing the same
EP2184727A1 (en) * 2007-07-31 2010-05-12 Sumitomo Chemical Company, Limited Substrate having barrier layer, display element and display element manufacturing method
US9012017B2 (en) 2007-07-31 2015-04-21 Sumitomo Chemical Company, Limited Barrier layer-attached substrate, display component, and method for manufacturing display component
WO2009017032A1 (en) 2007-07-31 2009-02-05 Sumitomo Chemical Company, Limited Substrate having barrier layer, display element and display element manufacturing method
EP2184727A4 (en) * 2007-07-31 2011-11-23 Sumitomo Chemical Co Substrate having barrier layer, display element and display element manufacturing method
US20100196679A1 (en) * 2007-07-31 2010-08-05 Sumitomo Chemcial Company Limited Barrier layer-attached substrate, display component, and method for manufacturing display component
US20100224859A1 (en) * 2007-10-16 2010-09-09 Hcf Partners, Lp Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots
US8168318B2 (en) 2007-10-25 2012-05-01 Applied Materials, Inc. Method for high volume manufacturing of thin film batteries
US20090148764A1 (en) * 2007-10-25 2009-06-11 Applied Materials, Inc. Method for high volume manufacturing of thin film batteries
TWI396315B (en) * 2007-10-25 2013-05-11 Applied Materials Inc Method for high volume manufacturing of thin film batteries
WO2009055529A1 (en) * 2007-10-25 2009-04-30 Applied Materials, Inc. Method for high volume manufacturing of thin film batteries
WO2009061704A2 (en) * 2007-11-06 2009-05-14 Hcf Partners, L.P. Atomic layer deposition encapsulation
WO2009061704A3 (en) * 2007-11-06 2009-08-20 Hcf Partners L P Atomic layer deposition encapsulation
US20100297474A1 (en) * 2007-11-06 2010-11-25 Hcf Partners, Lp. Atomic Layer Deposition Process
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
US8518581B2 (en) 2008-01-11 2013-08-27 Inifinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
US9786873B2 (en) 2008-01-11 2017-10-10 Sapurast Research Llc Thin film encapsulation for thin film batteries and other devices
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
WO2009134211A1 (en) * 2008-04-29 2009-11-05 Agency For Science, Technology And Research Inorganic graded barrier film and methods for their manufacture
US10745795B2 (en) 2008-04-29 2020-08-18 Agency For Science, Technology And Research Inorganic graded barrier film and methods for their manufacture
US20110151173A1 (en) * 2008-04-29 2011-06-23 Agency For Science, Technology And Research Inorganic graded barrier film and methods for their manufacture
KR101385262B1 (en) * 2008-04-29 2014-04-16 에이전시 포 사이언스, 테크놀로지 앤드 리서치 Inorganic graded barrier film and methods for their manufacture
WO2010011390A2 (en) * 2008-05-07 2010-01-28 The Trustees Of Princeton University Hybrid layers for use in coatings on electronic devices or other articles
US20110114994A1 (en) * 2008-05-07 2011-05-19 Prashant Mandlik Hybrid layers for use in coatings on electronic devices or other articles
US8592253B2 (en) 2008-05-07 2013-11-26 The Trustees Of Princeton University Hybrid layers for use in coatings on electronic devices or other articles
US9882167B2 (en) 2008-05-07 2018-01-30 The Trustees Of Princeton University Hybrid layers for use in coatings on electronic devices or other articles
WO2010011390A3 (en) * 2008-05-07 2010-06-24 The Trustees Of Princeton University Hybrid layers for use in coatings on electronic devices or other articles
US8906523B2 (en) 2008-08-11 2014-12-09 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US20100031997A1 (en) * 2008-08-11 2010-02-11 Basol Bulent M Flexible thin film photovoltaic modules and manufacturing the same
US8260203B2 (en) 2008-09-12 2012-09-04 Infinite Power Solutions, Inc. Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
US20100090655A1 (en) * 2008-10-08 2010-04-15 Keating Joseph A Environmentally-Powered Wireless Sensor Module
US9184410B2 (en) 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9362530B2 (en) 2008-12-22 2016-06-07 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9337446B2 (en) 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
WO2010078405A1 (en) * 2008-12-30 2010-07-08 Vitex Systems, Inc. Method of making an edge-sealed, encapsulated environmentally sensitive device
TWI490953B (en) * 2008-12-30 2015-07-01 Samsung Display Co Ltd Edge-sealed, encapsulated environmentally sensitive device and method of making the same
US9444062B2 (en) * 2009-03-24 2016-09-13 Osram Oled Gmbh Thin-layer encapsulation for an optoelectronic component, method for the production thereof, and optoelectronic component
US20120132953A1 (en) * 2009-03-24 2012-05-31 Dirk Becker Thin-Layer Encapsulation for an Optoelectronic Component, Method for the Production Thereof, and Optoelectronic Component
US8599572B2 (en) 2009-09-01 2013-12-03 Infinite Power Solutions, Inc. Printed circuit board with integrated thin film battery
US9532453B2 (en) 2009-09-01 2016-12-27 Sapurast Research Llc Printed circuit board with integrated thin film battery
US20110212304A1 (en) * 2009-12-31 2011-09-01 Samsung Mobile Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US8624487B2 (en) 2009-12-31 2014-01-07 Samsung Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US8987758B2 (en) 2009-12-31 2015-03-24 Samsung Display Co., Ltd. Barrier film composite and display apparatus including the barrier film composite
US8963423B2 (en) 2009-12-31 2015-02-24 Samsung Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, method of manufacturing barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US9412970B2 (en) 2009-12-31 2016-08-09 Samsung Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US20110198620A1 (en) * 2009-12-31 2011-08-18 Samsung Mobile Display Co., Ltd. Barrier film composite and display apparatus including the barrier film composite
US20110210344A1 (en) * 2009-12-31 2011-09-01 Samsung Mobile Display Co., Ltd. Barrier film composite, display apparatus including the barrier film composite, and method of manufacturing display apparatus including the barrier film composite
US10680277B2 (en) 2010-06-07 2020-06-09 Sapurast Research Llc Rechargeable, high-density electrochemical device
TWI581445B (en) * 2011-08-04 2017-05-01 3M新設資產公司 Barrier assemblies
TWI581446B (en) * 2011-08-04 2017-05-01 3M新設資產公司 Method of making delamination resistant assemblies
US9614113B2 (en) 2011-08-04 2017-04-04 3M Innovative Properties Company Edge protected barrier assemblies
CN103733726A (en) * 2011-08-04 2014-04-16 3M创新有限公司 Edge protected barrier assemblies
CN103718649A (en) * 2011-08-04 2014-04-09 3M创新有限公司 Edge protected barrier assemblies
US10038112B2 (en) 2011-08-04 2018-07-31 3M Innovative Properties Company Edge protected barrier assemblies
CN103733725A (en) * 2011-08-04 2014-04-16 3M创新有限公司 Barrier assemblies
CN103427040A (en) * 2012-05-23 2013-12-04 海洋王照明科技股份有限公司 Organic electroluminescent device and production method thereof
US9995154B2 (en) * 2013-12-19 2018-06-12 Robert Bosch Gmbh Method for producing a rotor wheel and a rotor
US20150176416A1 (en) * 2013-12-19 2015-06-25 Robert Bosch Gmbh Method for Producing a Rotor Wheel and a Rotor
US10217961B2 (en) 2015-12-22 2019-02-26 Samsung Display Co., Ltd. Method of manufacturing display apparatus and display apparatus manufactured using the same
US10699947B2 (en) 2015-12-22 2020-06-30 Samsung Display Co., Ltd. Method of manufacturing display apparatus and display apparatus manufactured using the same

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US20050202646A1 (en) 2005-09-15

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