US20070181149A1 - Single wafer backside wet clean - Google Patents
Single wafer backside wet clean Download PDFInfo
- Publication number
- US20070181149A1 US20070181149A1 US11/689,283 US68928307A US2007181149A1 US 20070181149 A1 US20070181149 A1 US 20070181149A1 US 68928307 A US68928307 A US 68928307A US 2007181149 A1 US2007181149 A1 US 2007181149A1
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- United States
- Prior art keywords
- platter
- substrate
- backside
- top side
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000004140 cleaning Methods 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims abstract description 30
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 230000002209 hydrophobic effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 81
- 239000000126 substance Substances 0.000 description 34
- 238000011109 contamination Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the present invention relates to the field of cleaning of a substrate surface and more particularly to the backside cleaning of a single semiconductor wafer.
- particle removal is essential.
- most particle removal processes focus on the device side of a wafer as contamination left on the device side can cause a malfunctioning device.
- removing backside particles from a wafer is just as important.
- Contamination left on the non-device side (backside) can also cause a number of problems.
- Backside contamination can cause the photolithography step on the front side to be out of focus.
- Contamination on the backside can cause contamination of the processing tools, which in turn can contaminate the front side of the wafer.
- metallic contamination on the backside when present during a high temperature operation, can diffuse through the silicon wafer and contaminate the device side of the wafer and cause device defects.
- Particles can be removed by chemical means or by mechanical means.
- particles are usually removed by both a combination of mechanical means and chemical means.
- the current state of the art is spray processing to clean the non-device side of a wafer.
- a batch process that places a number of wafers into a bath filled with a liquid may be used.
- high frequency (megasonic) irradiation may be applied to the liquid to enhance the cleaning process.
- hydrophobic wafers tend to repel liquids. Consequently, backside cleaning of hydrophobic wafers with conventional methods of cleaning has not been effective or efficient.
- a method for cleaning a backside of a substrate that includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing the top side of the platter in a spaced apart relation, thus defining a gap therebetween and flowing a liquid through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.
- a method for cleaning a backside of a substrate that includes placing the substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is spaced apart from the top side of the platter forming a gap between the backside of the substrate and the top side of the platter and filling the gap with a cleaning liquid provided through the platter.
- a method for cleaning a backside of a substrate that includes placing the substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is facing the top side of the platter in a horizontal orientation. Then the backside of the substrate is spaced approximately 3.0 to 4.0 millimeters from the top side of the platter. Subsequently, a cleaning liquid is flowed through the platter into continuous contact with the entire backside of the substrate and the top side of the platter.
- FIG. 1 is a sectional view of one embodiment of a wafer cleaning chamber
- FIG. 2 is a partial sectional view of one embodiment of a center-section of a platter and a wafer having a flow of liquids therebetween;
- FIG. 3 is a top plan view of one embodiment of a wafer holding bracket
- FIG. 4 is a perspective view of the platter having a wafer disposed on a bracket.
- FIG. 5 is a flow diagram of one embodiment of a sequence for cleaning the backside of a wafer.
- a suitable process chamber includes the process chamber disclosed in U.S. application Ser. No. 09/891,849, filed on Jun. 25, 2001, which is incorporated by reference. Additional suitable process chambers include the TEMPESTTM family of chambers available from Applied Materials, Inc., of Santa Clara, Calif. It is contemplated that other systems, including those available from other manufacturers may be utilized.
- FIG. 1 is a sectional view of one embodiment of a single wafer cleaning chamber 100 .
- the chamber 100 is configured to expose a non-device side 114 of a wafer 106 to cleaning, rinsing and drying chemicals.
- the non-device side 114 of the wafer 106 is facing towards a through hole (feed port) 142 for exposure to cleaning chemicals provided from a chemical source 112 , while a device side 116 of the wafer 106 is facing away from feed port 142 .
- a platter 108 to initiate a wafer process cycle, a platter 108 translates along an axis 145 a distance downward and a rotatable wafer holding bracket (bracket) 148 moves to a position to receive the wafer 106 .
- a robot arm (not shown) holding the wafer 106 enters the interior of a chamber body 160 of the chamber 100 through an access door 158 and the wafer 106 is placed on the bracket 148 .
- the platter 108 is then raised so as to position the wafer 106 in a spaced apart relation above the platter 108 .
- platter 108 is circular, those skilled in the art will recognize that the geometry of platter 108 may be any geometry substantially similar in size to substrate 106 .
- the wafer 106 resting in the bracket 148 in the process position, is parallel to the platter 108 and spaced a distance from the platter 108 , thereby creating a gap 102 .
- the platter 108 is flat where it faces the wafer 106 and therefore, the distance separating the platter 108 and the wafer 106 is uniform.
- the gap 102 between the wafer 106 and the platter 108 is set such that a liquid flowing through the gap 102 may contact both the platter 108 and backside of the substrate 106 .
- the distance across the gap 102 may be directly correlated to the viscosity of a liquid, such as the cleaning chemicals provided from the chemical source 112 , used to clean the non-device side 114 of the wafer 106 .
- the distance across gap 102 may be in the range of approximately 0.5-10.0 millimeters (mm) and preferably between 3.0-4.0 mm.
- the wafer 106 when positioned in the bracket 148 can rest on three or more vertical support posts (posts) 110 of the bracket 148 .
- the posts 110 can contain an elastomer pad (shown in FIG. 3 ) to contact the wafer 106 directly.
- the wafer 106 may be rotated while cleaning chemicals are dispensed from below to contact the non-device side 114 of the wafer 106 .
- Cleaning chemicals may be any type of chemicals used to clean wafers in semiconductor chip fabrication, such as for example, isopropyl alcohol, hydrofluoric acid, standard clean-1 solution (hydrogen peroxide, ammonium hydroxide and water), de-ionized water, any combination thereof or any other suitable cleaning fluids.
- a tube 128 connects the chemical source 112 to the platter 108 .
- the platter 108 has a feed port 142 through which cleaning chemicals delivered through the tube 128 are provided to the non-device side 114 of the wafer 106 .
- feed port 142 may have a plurality of holes.
- the platter 108 may be made of any porous material, such as for example, a sponge-like material.
- platter 108 may be a static plate or a plate with megasonics, as disclosed in U.S. Patent Publication No. 2002/0029788, which is hereby incorporated by reference in its entirety.
- a nozzle 117 may be positioned above the wafer surface over the outer half of the wafer 106 .
- the nozzle 117 can apply a stream of inert gas 113 , such as Nitrogen (N 2 ) or additional cleaning fluids.
- Cleaning chemicals placed between the wafer 106 and the platter 108 can be maintained in position by natural forces such as capillary action and surface tension.
- a volume defined within the gap 102 and bounded at an edge 115 of the wafer 106 is substantially filled by the cleaning chemicals provided between the wafer 106 and the platter 108 . Consequently, the cleaning chemicals are in continuous contact with the entire non-device side 114 of the wafer 106 and a top side of the platter 108 .
- full immersion of the wafer non-device side 114 is simulated.
- a chemical flow rate required to maintain the cleaning chemicals against the non-device side 114 can be reduced during processing, resulting in less chemicals used for each process.
- the reduction in chemicals also allows for economic use of single use chemicals.
- the wafer rotation may be stopped allowing the wafer 106 to remain still while the cleaning chemicals contact the non-device side 114 of the wafer 106 .
- the wafer 106 can be rotated, however, to wet out the non-device side 114 of the wafer 106 initially with the cleaning chemicals as well as for the rinse and dry cycles.
- the wafer 106 may also be oscillated or vibrated.
- FIG. 2 is an illustration of one embodiment of the center section of the platter 108 and the wafer 106 having a flow of cleaning chemicals therebetween.
- the platter 108 has a topside 217 and a bottom side 219 .
- the platter topside 217 faces the non-device side 114 of the wafer 106 .
- the platter 108 may be able to translate along rotational axis 145 to increase the distance across the gap 102 during wafer rinse and/or dry cycles.
- the robot arm (not shown) can place the wafer 106 in the bracket 148 such that the wafer device side 116 is facing up and away from the platter 108 . When placed in the bracket 148 , the wafer 106 can be centered over, and held substantially parallel to, the platter 108 to create the gap 102 .
- the distance across the gap 102 may be approximately between 3.0-4.0 mm, but may fall within a larger range of approximately 0.5-10.0 mm.
- Positioned beneath the platter 108 can be an electric motor (not shown) for rotating the bracket 148 .
- a through hole (not shown) can exist in the electric motor through which wiring may be passed from the platter 108 as well as a tube 128 for transferring cleaning chemicals from the chemical source 112 to the feed port 142 .
- bracket 148 rotates wafer 106 while the cleaning chemicals are applied from below such that the chemicals are in simultaneous and continuous contact with the platter 108 and the entire non-device side 114 of the wafer 106 .
- the cleaning chemicals substantially fill the volume created by the gap 102 to the edge 115 of the wafer 106 .
- the wafer 106 may be rotated at a selected revolution per minute (rpm) about an axis 145 that runs through the pivot point of the bracket 148 . Additionally, to optimize any particular cycle, the wafer spin rate may be stopped or varied by changing the power setting.
- the bracket 148 powered by the motor (not shown), can rotate the wafer 106 during cleaning operations at an rpm of approximately between 0-1000 rpm and during the dry and rinse cycles at an rpm of greater than 250 rpm, wherein a range of approximately between 250-6000 rpm is preferable.
- FIG. 3 illustrates a top plan view of one embodiment of the rotatable wafer holding bracket 148 .
- FIG. 4 illustrates a perspective view of the bracket 148 holding the wafer 106 . Both views will be discussed simultaneously for the purpose of clarity.
- the wafer 106 (shown in dashed line) can be held in place by the bracket 148 to position the wafer 106 parallel to and near the platter (not shown for clarity).
- the bracket 148 can hold the wafer 106 by gravity at four points 409 and 409 ′ along the edge 115 such that the device side 116 and the non-device side 114 of wafer 106 are clear of the bracket structure and fully exposed to cleaning/rinsing liquids.
- the number of contact points 409 and 409 ′ between the bracket 148 and the wafer 106 may be at least three.
- the portion of the bracket 148 in contact with the wafer 106 can be made with an elastomeric material such as a plastic or rubber to friction grip the wafer 106 during the start and stop phases of rotation.
- the contact points are O-rings that are positioned at the ends of bracket support posts (posts) 411 .
- FIG. 5 is a flow diagram illustrating one embodiment of a method 500 for cleaning the backside of a substrate.
- the method 500 is described in conjunction with chamber 100 of FIG. 1 , as an example for clarity, but one skilled in the art will recognize that method 500 may be practiced on other systems.
- the method 500 begins at step 510 by placing the substrate 106 in the chamber 100 .
- Substrate 106 such as a semiconductor wafer, is placed on bracket 148 at a distance from the platter 108 . In one embodiment, the substrate 106 is placed horizontally and parallel to the platter 108 .
- step 520 the height of bracket 148 is adjusted such that the substrate 106 may be set at an appropriate distance from platter 108 .
- the distance between the non-device side 114 of substrate 106 and the top side of platter 108 form the gap 102 .
- the appropriate distance across the gap 102 may be set in response to the viscosity of the cleaning chemicals.
- the distance across the gap 102 may be in the range of 0.5-10.0 mm and more preferably in the range of 3.0-4.0 mm.
- the method 500 proceeds by flowing a liquid, such as cleaning chemicals provided by chemical source 112 , through platter 108 to fill gap 102 .
- a liquid such as cleaning chemicals provided by chemical source 112
- the distance across the gap 102 measured from the non-device side 114 of substrate 106 to the top side of platter 108 , is such that the flow of liquid through platter 108 substantially fills the volume created by gap 102 to the edge 115 of the substrate 106 .
- the liquid is in continuous contact with the entire non-device side 114 of the substrate 106 and the top side of platter 108 .
- the non-device side 114 of the substrate 106 is cleaned by simulating full immersion of the substrate 106 .
- Such a result is advantageous for certain substrates such as, for example, hydrophobic wafers that tend to repel liquids away from the wafer surface, and because less cleaning fluids are required compared to full immersion techniques.
- the bracket 148 holding the substrate may be rotated while flowing liquid through platter 108 .
- Rotating bracket 148 helps to achieve more uniform coverage of the liquid on the non-device side 114 of substrate 106 .
Abstract
A method and apparatus for cleaning a backside of a substrate is disclosed. The method includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween. Subsequently, a liquid is flowed through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.
Description
- This application is a continuation-in-part of U.S. patent application Ser. No. 09/891,849, filed on Jun. 25, 2001, which is a continuation-in-part of U.S. patent application Ser. No. 09/603,792, filed on Jun. 26, 2000, both of which are hereby incorporated by reference in their entireties. Priority to both U.S. patent application Ser. Nos. 09/891,849 and 09/603,792 are claimed.
- 1. Field of the Invention
- The present invention relates to the field of cleaning of a substrate surface and more particularly to the backside cleaning of a single semiconductor wafer.
- 2. Background of the Related Art
- In semiconductor substrate (wafer, substrate or other workpeice) cleaning, particle removal is essential. Generally, most particle removal processes focus on the device side of a wafer as contamination left on the device side can cause a malfunctioning device. However, removing backside particles from a wafer is just as important. Contamination left on the non-device side (backside) can also cause a number of problems. Backside contamination can cause the photolithography step on the front side to be out of focus. Contamination on the backside can cause contamination of the processing tools, which in turn can contaminate the front side of the wafer. Additionally, metallic contamination on the backside, when present during a high temperature operation, can diffuse through the silicon wafer and contaminate the device side of the wafer and cause device defects.
- Particles can be removed by chemical means or by mechanical means. In current state of the art, particles are usually removed by both a combination of mechanical means and chemical means. The current state of the art is spray processing to clean the non-device side of a wafer. Alternatively, a batch process that places a number of wafers into a bath filled with a liquid may be used. Optionally, high frequency (megasonic) irradiation may be applied to the liquid to enhance the cleaning process.
- In addition, some semiconductor device fabrications utilize hydrophobic wafers. Hydrophobic wafers tend to repel liquids. Consequently, backside cleaning of hydrophobic wafers with conventional methods of cleaning has not been effective or efficient. Currently, there are no effective single wafer cleaning techniques that are able to sufficiently clean both sides of a hydrophobic wafer simultaneously.
- Therefore, there remains a need for a more effective and efficient process suitable for a single wafer back-side cleaning.
- Methods are disclosed for cleaning a backside of a substrate in a single substrate cleaning tool. In one embodiment, a method is provided for cleaning a backside of a substrate that includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing the top side of the platter in a spaced apart relation, thus defining a gap therebetween and flowing a liquid through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.
- In another embodiment, a method is provided for cleaning a backside of a substrate that includes placing the substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is spaced apart from the top side of the platter forming a gap between the backside of the substrate and the top side of the platter and filling the gap with a cleaning liquid provided through the platter.
- In another embodiment, a method is provided for cleaning a backside of a substrate that includes placing the substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is facing the top side of the platter in a horizontal orientation. Then the backside of the substrate is spaced approximately 3.0 to 4.0 millimeters from the top side of the platter. Subsequently, a cleaning liquid is flowed through the platter into continuous contact with the entire backside of the substrate and the top side of the platter.
- So that the manner in which the above recited aspects of the invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
- It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a sectional view of one embodiment of a wafer cleaning chamber; -
FIG. 2 is a partial sectional view of one embodiment of a center-section of a platter and a wafer having a flow of liquids therebetween; -
FIG. 3 is a top plan view of one embodiment of a wafer holding bracket; -
FIG. 4 is a perspective view of the platter having a wafer disposed on a bracket; and -
FIG. 5 is a flow diagram of one embodiment of a sequence for cleaning the backside of a wafer. - To facilitate understanding, identical reference numerals have been used, wherever possible, to designate identical elements that are common to the figures. It is contemplated that features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
- Aspects of the invention will be described below in reference to a process chamber that can process either or both a top and bottom side of a single substrate or wafer in chip processing. It is to be noted, that hereinafter substrate and wafer may be used interchangeably. A suitable process chamber includes the process chamber disclosed in U.S. application Ser. No. 09/891,849, filed on Jun. 25, 2001, which is incorporated by reference. Additional suitable process chambers include the TEMPEST™ family of chambers available from Applied Materials, Inc., of Santa Clara, Calif. It is contemplated that other systems, including those available from other manufacturers may be utilized.
-
FIG. 1 is a sectional view of one embodiment of a singlewafer cleaning chamber 100. Thechamber 100 is configured to expose anon-device side 114 of awafer 106 to cleaning, rinsing and drying chemicals. In one embodiment, thenon-device side 114 of thewafer 106 is facing towards a through hole (feed port) 142 for exposure to cleaning chemicals provided from achemical source 112, while adevice side 116 of thewafer 106 is facing away fromfeed port 142. - In one embodiment, to initiate a wafer process cycle, a
platter 108 translates along an axis 145 a distance downward and a rotatable wafer holding bracket (bracket) 148 moves to a position to receive thewafer 106. A robot arm (not shown) holding thewafer 106 enters the interior of achamber body 160 of thechamber 100 through anaccess door 158 and thewafer 106 is placed on thebracket 148. Theplatter 108 is then raised so as to position thewafer 106 in a spaced apart relation above theplatter 108. Although in the presentexemplary embodiment platter 108 is circular, those skilled in the art will recognize that the geometry ofplatter 108 may be any geometry substantially similar in size tosubstrate 106. - In one embodiment, the
wafer 106, resting in thebracket 148 in the process position, is parallel to theplatter 108 and spaced a distance from theplatter 108, thereby creating agap 102. Theplatter 108 is flat where it faces thewafer 106 and therefore, the distance separating theplatter 108 and thewafer 106 is uniform. Thegap 102 between thewafer 106 and theplatter 108 is set such that a liquid flowing through thegap 102 may contact both theplatter 108 and backside of thesubstrate 106. In one embodiment, the distance across thegap 102 may be directly correlated to the viscosity of a liquid, such as the cleaning chemicals provided from thechemical source 112, used to clean thenon-device side 114 of thewafer 106. The distance acrossgap 102 may be in the range of approximately 0.5-10.0 millimeters (mm) and preferably between 3.0-4.0 mm. - In one embodiment, the
wafer 106 when positioned in thebracket 148 can rest on three or more vertical support posts (posts) 110 of thebracket 148. Theposts 110 can contain an elastomer pad (shown inFIG. 3 ) to contact thewafer 106 directly. Thewafer 106 may be rotated while cleaning chemicals are dispensed from below to contact thenon-device side 114 of thewafer 106. Cleaning chemicals may be any type of chemicals used to clean wafers in semiconductor chip fabrication, such as for example, isopropyl alcohol, hydrofluoric acid, standard clean-1 solution (hydrogen peroxide, ammonium hydroxide and water), de-ionized water, any combination thereof or any other suitable cleaning fluids. - A
tube 128 connects thechemical source 112 to theplatter 108. Theplatter 108 has afeed port 142 through which cleaning chemicals delivered through thetube 128 are provided to thenon-device side 114 of thewafer 106. Although only a single hole infeed port 142 is shown in the present embodiment,platter 108 may have a plurality of holes. Moreover, theplatter 108 may be made of any porous material, such as for example, a sponge-like material. In addition,platter 108 may be a static plate or a plate with megasonics, as disclosed in U.S. Patent Publication No. 2002/0029788, which is hereby incorporated by reference in its entirety. - In addition, a
nozzle 117 may be positioned above the wafer surface over the outer half of thewafer 106. Thenozzle 117 can apply a stream ofinert gas 113, such as Nitrogen (N2) or additional cleaning fluids. - Cleaning chemicals placed between the
wafer 106 and theplatter 108 can be maintained in position by natural forces such as capillary action and surface tension. A volume defined within thegap 102 and bounded at anedge 115 of thewafer 106 is substantially filled by the cleaning chemicals provided between thewafer 106 and theplatter 108. Consequently, the cleaning chemicals are in continuous contact with the entirenon-device side 114 of thewafer 106 and a top side of theplatter 108. Thus, full immersion of thewafer non-device side 114 is simulated. - Furthermore, a chemical flow rate required to maintain the cleaning chemicals against the
non-device side 114 can be reduced during processing, resulting in less chemicals used for each process. The reduction in chemicals also allows for economic use of single use chemicals. During the cleaning portion of the process, the wafer rotation may be stopped allowing thewafer 106 to remain still while the cleaning chemicals contact thenon-device side 114 of thewafer 106. Thewafer 106 can be rotated, however, to wet out thenon-device side 114 of thewafer 106 initially with the cleaning chemicals as well as for the rinse and dry cycles. Thewafer 106 may also be oscillated or vibrated. -
FIG. 2 is an illustration of one embodiment of the center section of theplatter 108 and thewafer 106 having a flow of cleaning chemicals therebetween. Theplatter 108 has a topside 217 and abottom side 219. Theplatter topside 217 faces thenon-device side 114 of thewafer 106. Theplatter 108 may be able to translate alongrotational axis 145 to increase the distance across thegap 102 during wafer rinse and/or dry cycles. The robot arm (not shown) can place thewafer 106 in thebracket 148 such that thewafer device side 116 is facing up and away from theplatter 108. When placed in thebracket 148, thewafer 106 can be centered over, and held substantially parallel to, theplatter 108 to create thegap 102. The distance across thegap 102 may be approximately between 3.0-4.0 mm, but may fall within a larger range of approximately 0.5-10.0 mm. Positioned beneath theplatter 108 can be an electric motor (not shown) for rotating thebracket 148. A through hole (not shown) can exist in the electric motor through which wiring may be passed from theplatter 108 as well as atube 128 for transferring cleaning chemicals from thechemical source 112 to thefeed port 142. - In one exemplary embodiment of the present method,
bracket 148 rotateswafer 106 while the cleaning chemicals are applied from below such that the chemicals are in simultaneous and continuous contact with theplatter 108 and the entirenon-device side 114 of thewafer 106. As depicted byarrows 202, the cleaning chemicals substantially fill the volume created by thegap 102 to theedge 115 of thewafer 106. - During the cleaning, rinse and dry cycles, the
wafer 106 may be rotated at a selected revolution per minute (rpm) about anaxis 145 that runs through the pivot point of thebracket 148. Additionally, to optimize any particular cycle, the wafer spin rate may be stopped or varied by changing the power setting. In one embodiment, thebracket 148, powered by the motor (not shown), can rotate thewafer 106 during cleaning operations at an rpm of approximately between 0-1000 rpm and during the dry and rinse cycles at an rpm of greater than 250 rpm, wherein a range of approximately between 250-6000 rpm is preferable. -
FIG. 3 illustrates a top plan view of one embodiment of the rotatablewafer holding bracket 148.FIG. 4 illustrates a perspective view of thebracket 148 holding thewafer 106. Both views will be discussed simultaneously for the purpose of clarity. The wafer 106 (shown in dashed line) can be held in place by thebracket 148 to position thewafer 106 parallel to and near the platter (not shown for clarity). Initially, thebracket 148 can hold thewafer 106 by gravity at fourpoints edge 115 such that thedevice side 116 and thenon-device side 114 ofwafer 106 are clear of the bracket structure and fully exposed to cleaning/rinsing liquids. The number of contact points 409 and 409′ between thebracket 148 and thewafer 106 may be at least three. The portion of thebracket 148 in contact with thewafer 106 can be made with an elastomeric material such as a plastic or rubber to friction grip thewafer 106 during the start and stop phases of rotation. In one embodiment, the contact points are O-rings that are positioned at the ends of bracket support posts (posts) 411. -
FIG. 5 is a flow diagram illustrating one embodiment of amethod 500 for cleaning the backside of a substrate. Themethod 500 is described in conjunction withchamber 100 ofFIG. 1 , as an example for clarity, but one skilled in the art will recognize thatmethod 500 may be practiced on other systems. Themethod 500 begins atstep 510 by placing thesubstrate 106 in thechamber 100.Substrate 106, such as a semiconductor wafer, is placed onbracket 148 at a distance from theplatter 108. In one embodiment, thesubstrate 106 is placed horizontally and parallel to theplatter 108. - Once the
substrate 106 is properly placed inchamber 100, the process proceeds to step 520 where the height ofbracket 148 is adjusted such that thesubstrate 106 may be set at an appropriate distance fromplatter 108. The distance between thenon-device side 114 ofsubstrate 106 and the top side ofplatter 108 form thegap 102. - As discussed above in an exemplary embodiment, the appropriate distance across the
gap 102 may be set in response to the viscosity of the cleaning chemicals. The higher the viscosity of the cleaning chemicals, a larger distance across thegap 102 may be used. Likewise, the lower the viscosity of the cleaning chemicals, a shorter distance across thegap 102 must be used. Using a 300 mm substrate and typical backside wafer cleaning chemicals such as, for example, isopropyl alcohol, standard clean-1 (i.e. hydrogen peroxide, ammonium hydroxide and water), de-ionized water, or any combination thereof, the distance across thegap 102 may be in the range of 0.5-10.0 mm and more preferably in the range of 3.0-4.0 mm. - At
step 530, themethod 500 proceeds by flowing a liquid, such as cleaning chemicals provided bychemical source 112, throughplatter 108 to fillgap 102. As discussed above, the distance across thegap 102, measured from thenon-device side 114 ofsubstrate 106 to the top side ofplatter 108, is such that the flow of liquid throughplatter 108 substantially fills the volume created bygap 102 to theedge 115 of thesubstrate 106. By filling the volume created bygap 102 to theedge 115 of thesubstrate 106 with liquid, the liquid is in continuous contact with the entirenon-device side 114 of thesubstrate 106 and the top side ofplatter 108. As a result, thenon-device side 114 of thesubstrate 106 is cleaned by simulating full immersion of thesubstrate 106. Such a result is advantageous for certain substrates such as, for example, hydrophobic wafers that tend to repel liquids away from the wafer surface, and because less cleaning fluids are required compared to full immersion techniques. - At
step 540, thebracket 148 holding the substrate may be rotated while flowing liquid throughplatter 108.Rotating bracket 148 helps to achieve more uniform coverage of the liquid on thenon-device side 114 ofsubstrate 106. - While the foregoing is directed to the exemplary aspects of the invention, other and further aspects of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (21)
1. A method for cleaning a backside of a substrate, comprising:
placing a substrate parallel to a platter, wherein a backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween; and
flowing a liquid through the platter and into continuous contact with the top side of the platter and the entire backside of the substrate.
2. The method of claim 1 , further comprising:
holding the substrate in a bracket above the platter; and
rotating the bracket while simultaneously performing the flowing step.
3. The method of claim 1 , wherein the placing step further comprises placing the substrate parallel to the platter in a horizontal orientation.
4. The method of claim 1 , wherein the substrate comprises a hydrophobic semiconductor wafer.
5. The method of claim 1 , wherein the platter comprises a porous material.
6. The method of claim 1 further comprising setting a distance across the gap in response to a viscosity of the liquid.
7. The method of claim 1 , wherein a distance across the gap defined between the backside of the substrate and the top side of the platter is approximately 3.0 to 4.0 millimeters.
8. The method of claim 1 , wherein the liquid comprises at least one of isopropyl alcohol, hydrogen peroxide, ammonium hydroxide, water or de-ionized water.
9. A method for cleaning a backside of a substrate, comprising:
placing a substrate parallel to a platter having a top side and a bottom side, wherein a backside of the substrate is spaced apart from the top side of the platter, thereby forming a gap between the backside of the substrate and the top side of the platter; and
filling the gap with a cleaning liquid provided through the platter.
10. The method of claim 9 , further comprising:
rotating the substrate while the cleaning liquid is in the gap.
11. The method of claim 9 , wherein the placing step further comprises placing the substrate in a horizontal orientation above the platter.
12. The method of claim 9 , wherein the substrate comprises a hydrophobic semiconductor wafer.
13. The method of claim 9 , wherein the platter comprises a porous material.
14. The method of claim 9 further comprising setting a distance across the gap in response to a viscosity of the cleaning liquid.
15. The method of claim 9 , wherein a distance across the gap between the backside of the substrate and the top side of the platter is approximately 3.0 to 4.0 millimeters.
16. The method of claim 9 , wherein the cleaning liquid comprises at least one of isopropyl alcohol, hydrogen peroxide, ammonium hydroxide, water or de-ionized water.
17. A method for cleaning a backside of a substrate, comprising:
placing a substrate parallel to a platter having a top side and a bottom side, wherein the backside of the substrate is facing the top side of the platter in a horizontal orientation;
spacing the backside of the substrate approximately 3.0 to 4.0 millimeters from the top side of the platter; and
flowing a cleaning liquid through the platter into continuous contact with the entire backside of the substrate and the top side of the platter.
18. The method of claim 17 , further comprising:
rotating the substrate while flowing the cleaning liquid into contact with the substrate.
19. The method of claim 18 , further comprising:
stopping the flow of cleaning liquid.
20. The method of claim 19 , further comprising:
increasing a rotating speed of the substrate after stopping the flow of cleaning liquid.
21. The method of claim 20 , further comprising:
increasing the spacing between the substrate and the top side of the platter after stopping the flow of cleaning liquid.
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US20080236615A1 (en) * | 2007-03-28 | 2008-10-02 | Mimken Victor B | Method of processing wafers in a sequential fashion |
US8734593B2 (en) * | 2010-03-30 | 2014-05-27 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
US9576787B2 (en) | 2010-03-30 | 2017-02-21 | SCREEN Holdings Co., Ltd. | Substrate treatment method |
US11508610B2 (en) | 2018-04-19 | 2022-11-22 | Applied Materials, Inc. | Substrate support with edge seal |
Also Published As
Publication number | Publication date |
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WO2002001613A2 (en) | 2002-01-03 |
WO2002001613A3 (en) | 2002-08-22 |
JP2004515053A (en) | 2004-05-20 |
US20060260659A1 (en) | 2006-11-23 |
US20060266392A1 (en) | 2006-11-30 |
EP1295314A2 (en) | 2003-03-26 |
US20060278253A1 (en) | 2006-12-14 |
US20060266393A1 (en) | 2006-11-30 |
US7819985B2 (en) | 2010-10-26 |
US20060260643A1 (en) | 2006-11-23 |
US20080047582A1 (en) | 2008-02-28 |
WO2002001613A8 (en) | 2003-10-23 |
US20060260660A1 (en) | 2006-11-23 |
US20060260642A1 (en) | 2006-11-23 |
US20060266387A1 (en) | 2006-11-30 |
US20080083436A1 (en) | 2008-04-10 |
US20080083437A1 (en) | 2008-04-10 |
US20060260644A1 (en) | 2006-11-23 |
AU2001270205A1 (en) | 2002-01-08 |
US20060260661A1 (en) | 2006-11-23 |
US7334588B2 (en) | 2008-02-26 |
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