US20070262366A1 - Cmos image sensor and method of manufacturing same - Google Patents
Cmos image sensor and method of manufacturing same Download PDFInfo
- Publication number
- US20070262366A1 US20070262366A1 US11/782,085 US78208507A US2007262366A1 US 20070262366 A1 US20070262366 A1 US 20070262366A1 US 78208507 A US78208507 A US 78208507A US 2007262366 A1 US2007262366 A1 US 2007262366A1
- Authority
- US
- United States
- Prior art keywords
- transparent optical
- image sensor
- inner lens
- cmos image
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 106
- 238000009413 insulation Methods 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 5
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 5
- 230000000295 complement effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229920000620 organic polymer Polymers 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 18
- 238000005530 etching Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 10
- 230000000149 penetrating effect Effects 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- -1 silicon oxide nitride Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Definitions
- the present invention relates generally to a complementary metal oxide semiconductor (CMOS) sensor and a method for manufacturing the same. More particularly, the invention relates to a CMOS sensor having an inner lens located in a planarized insulation layer thereof and a method of manufacturing the same.
- CMOS complementary metal oxide semiconductor
- CMOS image sensors are commonly used in various digital imaging applications such as digital cameras and the like.
- a typical CMOS image sensor includes a light sensing block receiving incident light and a logic block converting the incident light into electrical signals.
- CMOS image sensors provide various advantages over competing digital imaging technologies. For example, CMOS image sensors are relatively power efficient and they are readily integrated with other devices on a single chip.
- CMOS image sensor technology has improved in a number of ways.
- the optical sensitivity of CMOS image sensors has been improved by increasing a fill factor thereof.
- Fill factor is a ratio representing the relative amount of a CMOS image sensor occupied by the light sensing block.
- the fill factor is generally limited by the amount of space on the sensor occupied by the logic block. Hence, the fill factor can be increased by reducing the size of the logic block.
- One way to improve the optical sensitivity of a CMOS image sensor includes placing a micro lens on the light sensing block to concentrate incident light thereon.
- a micro lens is placed on the light sensing block to concentrate incident light thereon.
- One problem with the micro lens is that its effectiveness is limited by properties of an optical path between the micro lens and the light sensing block.
- CMOS image sensors providing improved optical sensitivity and associated methods of manufacture are needed.
- a CMOS image sensor is provided. According to other embodiments of the invention, a method of manufacturing a CMOS image sensor is provided.
- the CMOS image sensor provides increased optical sensitivity by concentrating incident light on a photodiode through an optical path including an inner lens between a micro lens and the photodiode.
- CMOS image sensor comprises a substrate having a photodiode region and a transistor region, a photodiode formed on the photodiode region of the substrate, a plurality of transistors formed on the transistor region of the substrate, a planarized insulation layer covering the photodiode and the plurality of transistors, an intermetal insulation layer formed on the planarized insulation layer, and a metal wire layer formed on the transistor region, the metal wire layer penetrating the intermetal insulation layer.
- the CMOS image sensor further comprises an inner lens formed on the planarized insulation layer, the inner lens being formed opposite the photodiode as part of the intermetal insulation layer, and a transparent optical region covering the inner lens and penetrating the intermetal insulation layer on the photodiode region.
- the transparent optical region is preferably formed of a different material from the intermetal insulation layer.
- a method of manufacturing a CMOS image sensor comprises forming a substrate having a photodiode region and a transistor region, forming a photodiode on the photodiode region, forming a transistor on the transistor region, forming a planarized insulation layer covering the photodiode and the transistor, forming an intermetal insulation layer covering the planarized insulation layer, and forming a metal wire layer on the transistor region, the metal wire layer penetrating the intermetal insulation layer.
- the method further comprises forming a cavity penetrating the intermetal insulation layer by removing a portion of the intermetal insulation layer on the photodiode region, forming an inner lens as a part of the intermetal insulation layer in the photodiode region, and forming a transparent optical region on the inner lens by filling the cavity.
- FIG. 1 is a diagram illustrating a pixel sensor of a CMOS image sensor in accordance with an embodiment of the present invention
- FIG. 2 is a cross-sectional view of the pixel sensor shown in FIG. 1 in accordance with one embodiment of the invention
- FIG. 3 is a cross-sectional view of the pixel sensor shown in FIG. 1 in accordance with another embodiment of the invention.
- FIG. 4 is a cross-sectional view of the pixel sensor shown in FIG. 1 in accordance with still another embodiment of the invention.
- FIG. 5 is a cross-sectional view of the pixel sensor shown in FIG. 1 in accordance with still another embodiment of the invention.
- FIGS. 6A through 6D are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with an embodiment of the present invention.
- FIGS. 7A and 7B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with another embodiment of the present invention.
- FIGS. 8A and 8B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention.
- FIGS. 9A and 9B are diagrams of a method for manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention.
- FIG. 1 is a diagram illustrating a pixel sensor of a CMOS image sensor in accordance with an embodiment of the present invention.
- the CMOS image sensor typically comprises an array of pixel sensors formed on a pixel array region of a semiconductor substrate.
- a pixel sensor 10 comprises a photodiode region 20 and a transistor region 30 .
- Pixel sensor 10 receives light through a photodiode PD formed in photodiode region 20 .
- the light received by photodiode PD is converted into electrical signals and transferred to transistors in transistor region 30 .
- Transistor region 30 includes a transfer transistor Tx transferring electric charges generated by photodiode PD to a floating diffusion region FD, a reset transistor Rx periodically resetting electric charges stored in floating diffusion region FD, a drive transistor Dx functioning as a source follower buffer amplifier for buffering a signal corresponding to electric charges in the floating diffusion region, and a select transistor Sx as a switch used to select pixel sensor 10 .
- pixel sensor 10 comprises one photodiode and four metal oxide semiconductor (MOS) transistors Tx, Rx, Dx, and Sx.
- MOS metal oxide semiconductor
- the present invention is not limited to this structure.
- the pixel sensor comprises a transfer transistor and a source follower buffer amplifier in the transistor region, and a photodiode in the photodiode region.
- FIG. 2 is a cross-sectional view of pixel sensor 10 shown in FIG. 1 .
- the view shown in FIG. 2 is taken along a line between points II and II′ in FIG. 1 .
- the pixel sensor comprises a semiconductor substrate 100 having a photodiode region and a transistor region.
- Semiconductor substrate 100 includes an active region defined by an isolation region 102 .
- the photodiode region includes an n-type photodiode 104 and a p+ type hole accumulated device (HAD) region 106 formed on photodiode 104 .
- the transistor region includes a plurality of transistors 110 formed on semiconductor substrate 100 . For simplicity of illustration, however, FIG. 2 shows only one transistor 110 .
- Transistor 110 shown in FIG. 2 is a transfer transistor Tx transferring charge generated at photodiode 104 to a n+ type floating diffusion region 108 .
- Planarized insulation layer 120 comprises an insulation layer 112 formed of a material identical to that forming an insulation spacer 112 a at a sidewall of a gate of transistor 110 .
- planarized insulation layer 120 further comprises an insulation film having a salicide blocking layer (not shown) in the photodiode region.
- the insulation film may comprise, for example, a stacked structure including a medium temperature oxide (MTO) film and silicon nitride film.
- MTO medium temperature oxide
- the salicide blocking layer is used as a mask to cover the photodiode during a salicide process used to form a metal salicide layer on gate, source and drain regions of transistors formed in the transistor region.
- Planarized insulation layer 120 further comprises a capping layer (not shown) formed on transistor 110 .
- the capping layer typically comprises a stacked structure including an undoped silicate glass (USG) film and a SiON film.
- Planarized insulation layer 120 still further comprises a plasma-enhanced tetraethylorthosilicated glass (PE-TEOS) film used as a top layer for planarizing the upper surface of planarized insulation layer 120 .
- PE-TEOS plasma-enhanced tetraethylorthosilicated glass
- Intermetal insulation layer 130 is formed on planarized insulation layer 120 over the photodiode region and the transistor region.
- Intermetal insulation layer 130 includes three sequentially stacked insulation films 132 , 134 , 136 .
- a wire layer 140 including a plurality of metal wire layers 142 , 144 , 146 and 148 is formed inside intermetal insulation layer 130 .
- Metal wire layer 142 is formed on planarized insulation layer 120 by penetrating insulation film 132
- metal wire layer 144 is formed on insulation film 132 by penetrating insulation film 134
- metal wire layer 146 is formed on insulation film 134 by penetrating insulation film 136
- metal wire layer 148 is formed on insulation film 136 .
- wire layer 140 has four (4) layers in the embodiment shown in FIG. 2 , the number of layers in wire layer 140 and the number of corresponding layers in intermetal insulation layer 130 can vary.
- Insulation films 132 , 134 , and 136 each typically comprise a film containing oxide, nitride, or oxide and nitride.
- Wire layer 148 is covered by a passivation layer 150 , which also typically comprises a film containing oxide, nitride, or oxide and nitride.
- An inner lens 160 is formed in the photodiode region opposite photodiode 104 .
- inner lens 160 is a convex lens and is formed on the same plane as metal wire layer 142 .
- Inner lens 160 is formed among the plurality of insulation films 132 , 134 and 136 as part of intermetal insulation layer 130 .
- Inner lens 160 preferably comprises an oxide layer.
- a transparent optical region 170 covering inner lens 160 is formed by penetrating intermetal insulation layer 130 above inner lens 160 .
- Transparent optical region 170 is formed of a different material from intermetal insulation layer 130 .
- transparent optical region 170 is formed of a material having a different refractive index from inner lens 160 .
- Transparent optical region 170 is typically formed of an organic polymer compound.
- it may be formed of CytopTM (Ashahi Glass Company) and a polymethyl methacrylate (PMMA) polymer.
- CytopTM is a fluoro polymer having a ring shape.
- a material having a lower refractive index than inner lens 160 such as CytopTM polymer, is used to form transparent optical region 170 .
- a planarized layer 172 is formed on transparent optical region 170 and metal wire layer 140 .
- a color filter 180 is formed on planarized layer 172 .
- Planarized layer 172 is formed of the same material as transparent optical region 170 .
- a micro lens 190 is formed on color filter 180 facing photodiode 104 .
- Micro lens 190 may be formed of a TMR type resin (Tokyo Ohka Kogyo, Co.) or a MFR type resin (Japan Synthetic Rubber Corporation).
- a transparent optical path is provided in the pixel sensor by forming convex inner lens 160 as a part of intermetal insulation layer 130 and forming transparent optical region 170 on inner lens 160 of a different material from intermetal insulation layer 130 .
- transparent optical region 170 is formed of a material having a lower refractive index than inner lens 160 .
- the pixel sensor shown in FIG. 2 is able to concentrate light on photodiode 104 through inner lens 160 .
- FIG. 3 is a diagram of pixel sensor 10 in accordance with another embodiment of the present invention.
- the pixel sensor shown in FIG. 3 has the same structure as the pixel sensor shown in FIG. 2 , except that a transparent optical liner 262 is included between inner lens 160 and transparent optical region 170 .
- Transparent optical liner 262 is formed along the upper surface of inner lens 160 with the same convex contour as inner lens 160 .
- Transparent optical liner 262 is preferably formed using silicon nitride, silicon oxide-nitride, or an organic polymer compound. Transparent optical liner 262 is typically formed of a material having a different refractive index from inner lens 160 and transparent optical region 170 . Preferably, transparent optical liner 262 is formed of a material having lower refractive index than inner lens 160 , and a higher refractive index than transparent optical region 170 . For example, where inner lens 160 is formed of an oxide film, transparent optical liner 262 is formed of a CytopTM type polymer.
- the pixel sensor includes inner lens 160 , transparent optical liner 262 on inner lens 160 and transparent optical region 170 on transparent optical liner 262 .
- Transparent optical liner 262 and transparent optical region 170 are preferably formed of a material having a lower refractive index than inner lens 160 and transparent optical region 170 is preferably formed with a material having lower refractive index than transparent optical liner 262 .
- a CMOS image sensor having the pixel sensor shown in FIG. 3 provides concentrated light on photodiode 104 .
- Transparent optical liner 262 between inner lens 160 and transparent optical region 170 improves the optical sensitivity of the sensor by concentrating incident light on photodiode 104 .
- FIG. 4 is a cross-sectional view of the pixel sensor shown in FIG. 1 according to still another embodiment of the invention.
- the pixel sensor shown in FIG. 4 has the same structure as the pixel sensor shown in FIG. 2 , except that inner lens 160 in FIG. 2 is replaced by an inner lens 360 in FIG. 4 .
- Inner lens 360 shown in FIG. 4 is a concave lens.
- the pixel sensor shown in FIG. 4 provides a transparent optical path by forming a concave inner lens 360 among insulation films 132 , 134 , and 136 as a part of intermetal insulation layer 130 and forming transparent optical region 170 on inner lens 360 using a different material from intermetal insulation layer 130 .
- Transparent optical region 170 is preferably formed of a material having a higher refractive index than inner lens 360 .
- FIG. 5 is a diagram of a pixel sensor in accordance with still another embodiment of the present invention.
- the pixel sensor shown in FIG. 5 has the same structure as the pixel sensor shown in FIG. 4 , except for a transparent optical liner 462 formed between inner lens 360 and transparent optical region 170 .
- Transparent optical liner 462 is formed with a concave shape on an upper surface of inner lens 360 .
- Transparent optical liner 462 is preferably formed of silicon nitride, silicon oxide-nitride, or an organic polymer compound.
- transparent optical liner 462 is preferably formed of a material having a different refractive index from inner lens 360 and transparent optical region 170 .
- transparent optical liner 462 is formed of a material having a higher refractive index than inner lens 360 and a lower refractive index than transparent optical region 170 .
- transparent optical liner 462 is formed of silicon nitride, silicon oxide nitride, or a PMMA type polymer.
- the pixel sensor shown in FIG. 5 provides efficiently concentrated light on photodiode 104 by forming transparent optical liner 462 between inner lens 360 and transparent optical region 170 .
- FIGS. 6A through 6D are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with an embodiment of the present invention.
- a semiconductor substrate 100 having a photodiode region and a transistor region is formed.
- An isolation region 102 is formed on semiconductor substrate 100 , thereby defining an active region in semiconductor substrate 100 .
- an “n” type photodiode 104 is formed in the photodiode region on the surface of semiconductor substrate 100 .
- a p+ type HAD region 106 is formed on the “n” type photodiode 104 , and a plurality of transistors are formed in the transistor region.
- FIG. 6A shows only a single transistor 110 .
- Insulation spacer 112 a is formed at a sidewall of a gate 110 a of transistor 110 .
- Insulation spacer 112 a is formed by forming an insulation layer 112 to cover the photodiode region and the transistor region after gate 110 a is formed in the transistor region.
- a mask pattern such as a photoresist pattern (not shown) is formed on insulation layer 112 to cover the photodiode region. Using the mask pattern, insulation layer 112 is etched back to form insulation spacer 112 a at the sidewall of gate 110 a .
- insulation layer 112 is exposed by removing the photoresist pattern, insulation layers are stacked on insulation layer 112 and transistor 110 in the both the photodiode region and the transistor region, thereby forming a planarized insulation layer 120 on insulation layer 112 and transistor 110 .
- an intermetal insulation layer 130 is formed to cover planarized insulation layer 120 in the photodiode region and the transistor region, and a metal wire layer 140 is formed in intermetal insulation layer 130 .
- Intermetal insulation layer 130 comprises a plurality of stacked insulation films 132 , 134 , and 136 and metal wire layer 140 comprises a plurality of metal wire layers 142 , 144 , 146 , and 148 formed between insulation films 132 , 134 , and 136 .
- a passivation layer 150 is formed on intermetal insulation layer 130 and metal wire layer 148 .
- Passivation layer 150 has a stacked structure including an oxide layer of 1500 ⁇ thickness and a nitride layer of 2000 ⁇ thickness.
- a photoresist pattern 152 is formed on passivation layer 150 , thereby exposing a portion of passivation layer 150 in the photodiode region.
- Passivation layer 150 and intermetal insulation layer 130 are then etched by plasma etching using photoresist pattern 152 as an etching mask, thereby forming a cavity 154 in intermetal insulation layer 130 .
- cavity 154 may be formed by plasma etching method using an etching gas including of C 4 F 8 , O 2 , or Ar.
- etching gas including of C 4 F 8 , O 2 , or Ar.
- a “Unity85DD” device manufactured by Tokyo Electronics (TEL) may be used for the plasma etching.
- a bottom surface 154 a of cavity 154 has a predetermined curvature forming an inner lens 160 .
- the profile of bottom surface 154 a in cavity 154 is controlled by adjusting a ratio of O 2 gas to C 4 F 8 gas in the etching gas.
- bottom surface 154 a of cavity 154 is made convex by increasing the relative amount of O 2 gas in the etching gas.
- bottom surface 154 a of cavity 154 is made concave by increasing the relative amount of C 4 F 8 gas in the etching gas. Accordingly, in the embodiment shown in FIG. 6B , the O 2 content in the etching gas used to form cavity 154 is relatively high. As a result, bottom surface 154 a is convex.
- sccm standard cubic centimeters per minute
- the cavity 154 is formed by plasma etching using an etching gas comprising CF 4 , CH 2 F 2 , CO and O 2 , an etching gas comprising C 5 F 8 , O 2 and Ar, or an etching gas comprising CF 4 , CH 2 F 2 , O 2 or CO.
- a parallel flat plate type plasma etching device such as “Unity85SS” from Tokyo Electronics (TEL) is used.
- the profile of bottom surface 154 a of cavity 154 is controlled by adjusting the ratio of O 2 gas to carbon gas in the etching gas. That is, bottom surface 154 a of cavity 154 is made convex by increasing the relative concentration of O 2 gas in the etching gas. Bottom surface 154 a of cavity 154 is made concave by increasing the relative concentration of carbon gas.
- Cavity 154 is often formed to have a tapered sidewall 154 b .
- Tapered sidewall 154 b is typically formed by adding a carbon-rich gas such as CO, CH 2 F 2 , CHF 3 , or CH 3 F to the etching gas.
- the plasma etching is carried out with an RF power of about 1700W and a pressure of about 42 mT.
- the plasma etching may be carried out under various different conditions. For example, where a distance between a top electrode and a bottom electrode in the device is about 30 mm, the plasma etching may be carried out with an RF power of about 1500Ws to 1700Wb and a pressure of about 30 mT. Alternatively, the plasma etching may be carried out with an RF power of about 2000Ws and 1900Wb and a pressure of about 30 mT, or an RF power of about 1000Ws and 300Wb and a pressure of about 30 mT.
- Transparent optical region 170 fills cavity 154 , and planarized layer 172 covers metal wire layer 140 in the transistor region.
- Transparent optical region 170 and planarized layer 172 are formed by spin coating.
- Transparent optical region 170 is typically formed of an organic polymer compound such CytopTM or a PMMA polymer.
- CytopTM is used to form transparent optical region 170 .
- CytopTM has a lower refractive index than the oxide film used to form intermetal insulation layer 130 .
- the oxide film has a refractive index of about 1.45 and CytopTM has a refractive index of about 1.34.
- a color filter 180 is formed on planarized layer 172 and a micro lens 190 is formed on color filter 180 above photodiode 104 .
- FIGS. 7A and 7B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with another embodiment of the present invention.
- cavity 154 is formed according to the method described with reference to FIGS. 6A and 6B .
- photoresist pattern 152 is removed and a transparent optical liner 262 is formed to a predetermined thickness on bottom surface 154 a and sidewall 154 b of cavity 154 .
- Various properties of transparent optical liner 262 were explained previously with reference to FIG. 3 .
- a transparent optical region 170 and a planarized layer 172 are formed by coating a transparent optical material on transparent optical liner 262 according to the method explained with reference to FIG. 6C .
- color filter 180 and micro lens 190 are formed on planarized layer 172 according to the method explained with reference to FIG. 6D .
- FIGS. 8A and 8B are diagrams of illustrating a method of manufacturing a CMOS image sensor in accordance with yet another embodiment of the present invention.
- cavity 154 is formed using the same method described previously with reference to FIGS. 6A through 6D .
- the relative concentration of O 2 gas in the etching gas is controlled to give the bottom surface 154 a a concave shape.
- photoresist pattern 152 is removed. After photoresist pattern 152 is removed, transparent optical region 170 and planarized layer 172 are formed inside cavity 154 and on passivation layer 150 by depositing a transparent optical material. Color filter 180 and micro lens 190 are formed on planarized layer 172 .
- FIGS. 9A and 9B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention.
- cavity 154 is formed using methods previously described in relation to FIGS. 6A through 6D .
- photo-resist pattern 152 is removed using the method explained with reference to FIG. 8A .
- a transparent optical liner 462 is formed to a predetermined thickness on bottom surface 154 a and sidewall 154 b of cavity 154 .
- transparent optical region 170 and planarized layer 172 are formed on transparent optical liner 462 by depositing a transparent optical material according to the method described with reference to FIG. 6C . Then, color filter 180 and micro lens 190 are formed on planarized layer 172 using the method explained with reference to FIG. 6D .
- a CMOS image sensor includes a pixel sensor having a convex or concave lens as a part of intermetal insulation layer between the photodiode and the micro lens.
- the pixel sensor provides a transparent optical path by forming a transparent optical region penetrating an intermetal insulation layer and formed on the inner lens.
- the transparent optical region is formed of a transparent optical material which is different from a material used to form the intermetal insulation layer. Accordingly, the CMOS image sensor provides effective light concentration on the photodiode.
- the CMOS image sensor provides high optical sensitivity by concentrating light, using a transparent optical liner placed between the inner lens and the transparent optical region.
Abstract
Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.
Description
- This is a divisional of application Ser. No. 11/207,759, filed on Aug. 22, 2005, which is incorporated herein by reference in its entirety.
- 1. Field of the Invention
- The present invention relates generally to a complementary metal oxide semiconductor (CMOS) sensor and a method for manufacturing the same. More particularly, the invention relates to a CMOS sensor having an inner lens located in a planarized insulation layer thereof and a method of manufacturing the same.
- 2. Description of the Related Art
- Complementary metal oxide semiconductor (CMOS) image sensors are commonly used in various digital imaging applications such as digital cameras and the like. A typical CMOS image sensor includes a light sensing block receiving incident light and a logic block converting the incident light into electrical signals.
- CMOS image sensors provide various advantages over competing digital imaging technologies. For example, CMOS image sensors are relatively power efficient and they are readily integrated with other devices on a single chip.
- In recent years, CMOS image sensor technology has improved in a number of ways. For example, the optical sensitivity of CMOS image sensors has been improved by increasing a fill factor thereof. Fill factor is a ratio representing the relative amount of a CMOS image sensor occupied by the light sensing block. The fill factor is generally limited by the amount of space on the sensor occupied by the logic block. Hence, the fill factor can be increased by reducing the size of the logic block.
- Although the typical size of the logic block in CMOS image sensors has decreased over the years, the corresponding increase in optical sensitivity has been somewhat limited by a corresponding increase in the resolution of the CMOS image sensors. In other words, although the logic blocks have become smaller, modern devices now incorporate more of the logic blocks. As a result, additional measures are needed to improve the optical sensitivity of the CMOS image sensors.
- One way to improve the optical sensitivity of a CMOS image sensor includes placing a micro lens on the light sensing block to concentrate incident light thereon. One problem with the micro lens, however, is that its effectiveness is limited by properties of an optical path between the micro lens and the light sensing block.
- Various devices and methods have been introduced to improve the concentration of incident light on the light sensing block through the micro lens. Many of these techniques have focused on modifying the optical path between the micro lens and a photodiode in the image sensing block. For example, a dual lens structure is disclosed in U.S. Pat. No. 5,796,154 and a semiconductor array imaging device is disclosed in U.S. Pat. No. 6,171,885. Unfortunately, the above mentioned conventional devices require complicated and expensive fabrication processes.
- In order to overcome at least these problems, new CMOS image sensors providing improved optical sensitivity and associated methods of manufacture are needed.
- According to some embodiments of the invention, a CMOS image sensor is provided. According to other embodiments of the invention, a method of manufacturing a CMOS image sensor is provided. The CMOS image sensor provides increased optical sensitivity by concentrating incident light on a photodiode through an optical path including an inner lens between a micro lens and the photodiode.
- According to one embodiment of the invention, CMOS image sensor comprises a substrate having a photodiode region and a transistor region, a photodiode formed on the photodiode region of the substrate, a plurality of transistors formed on the transistor region of the substrate, a planarized insulation layer covering the photodiode and the plurality of transistors, an intermetal insulation layer formed on the planarized insulation layer, and a metal wire layer formed on the transistor region, the metal wire layer penetrating the intermetal insulation layer. The CMOS image sensor further comprises an inner lens formed on the planarized insulation layer, the inner lens being formed opposite the photodiode as part of the intermetal insulation layer, and a transparent optical region covering the inner lens and penetrating the intermetal insulation layer on the photodiode region. The transparent optical region is preferably formed of a different material from the intermetal insulation layer.
- According to another embodiment of the invention, a method of manufacturing a CMOS image sensor comprises forming a substrate having a photodiode region and a transistor region, forming a photodiode on the photodiode region, forming a transistor on the transistor region, forming a planarized insulation layer covering the photodiode and the transistor, forming an intermetal insulation layer covering the planarized insulation layer, and forming a metal wire layer on the transistor region, the metal wire layer penetrating the intermetal insulation layer. The method further comprises forming a cavity penetrating the intermetal insulation layer by removing a portion of the intermetal insulation layer on the photodiode region, forming an inner lens as a part of the intermetal insulation layer in the photodiode region, and forming a transparent optical region on the inner lens by filling the cavity.
- The invention is described below in relation to several embodiments illustrated in the accompanying drawings. Throughout the drawings like reference numbers indicate like exemplary elements, components, or steps. In the drawings:
-
FIG. 1 is a diagram illustrating a pixel sensor of a CMOS image sensor in accordance with an embodiment of the present invention; -
FIG. 2 is a cross-sectional view of the pixel sensor shown inFIG. 1 in accordance with one embodiment of the invention; -
FIG. 3 is a cross-sectional view of the pixel sensor shown inFIG. 1 in accordance with another embodiment of the invention; -
FIG. 4 is a cross-sectional view of the pixel sensor shown inFIG. 1 in accordance with still another embodiment of the invention; -
FIG. 5 is a cross-sectional view of the pixel sensor shown inFIG. 1 in accordance with still another embodiment of the invention; -
FIGS. 6A through 6D are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with an embodiment of the present invention; -
FIGS. 7A and 7B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with another embodiment of the present invention; -
FIGS. 8A and 8B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention; and, -
FIGS. 9A and 9B are diagrams of a method for manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention. - Exemplary embodiments of the invention are described below with reference to the corresponding drawings. These embodiments are presented as teaching examples. The actual scope of the invention is defined by the claims that follow.
-
FIG. 1 is a diagram illustrating a pixel sensor of a CMOS image sensor in accordance with an embodiment of the present invention. The CMOS image sensor typically comprises an array of pixel sensors formed on a pixel array region of a semiconductor substrate. - Referring to
FIG. 1 , apixel sensor 10 comprises aphotodiode region 20 and atransistor region 30.Pixel sensor 10 receives light through a photodiode PD formed inphotodiode region 20. The light received by photodiode PD is converted into electrical signals and transferred to transistors intransistor region 30. -
Transistor region 30 includes a transfer transistor Tx transferring electric charges generated by photodiode PD to a floating diffusion region FD, a reset transistor Rx periodically resetting electric charges stored in floating diffusion region FD, a drive transistor Dx functioning as a source follower buffer amplifier for buffering a signal corresponding to electric charges in the floating diffusion region, and a select transistor Sx as a switch used to selectpixel sensor 10. - In the embodiment shown in
FIG. 1 ,pixel sensor 10 comprises one photodiode and four metal oxide semiconductor (MOS) transistors Tx, Rx, Dx, and Sx. However, the present invention is not limited to this structure. For example, in a different embodiment, the pixel sensor comprises a transfer transistor and a source follower buffer amplifier in the transistor region, and a photodiode in the photodiode region. -
FIG. 2 is a cross-sectional view ofpixel sensor 10 shown inFIG. 1 . The view shown inFIG. 2 is taken along a line between points II and II′ inFIG. 1 . - Referring to
FIG. 2 , the pixel sensor comprises asemiconductor substrate 100 having a photodiode region and a transistor region.Semiconductor substrate 100 includes an active region defined by anisolation region 102. - The photodiode region includes an n-
type photodiode 104 and a p+ type hole accumulated device (HAD)region 106 formed onphotodiode 104. The transistor region includes a plurality oftransistors 110 formed onsemiconductor substrate 100. For simplicity of illustration, however,FIG. 2 shows only onetransistor 110.Transistor 110 shown inFIG. 2 is a transfer transistor Tx transferring charge generated atphotodiode 104 to a n+ type floatingdiffusion region 108. -
Photodiode 104 andtransistor 110 are covered by aplanarized insulation layer 120.Planarized insulation layer 120 comprises aninsulation layer 112 formed of a material identical to that forming aninsulation spacer 112 a at a sidewall of a gate oftransistor 110. - In selected embodiments of the invention,
planarized insulation layer 120 further comprises an insulation film having a salicide blocking layer (not shown) in the photodiode region. The insulation film may comprise, for example, a stacked structure including a medium temperature oxide (MTO) film and silicon nitride film. The salicide blocking layer is used as a mask to cover the photodiode during a salicide process used to form a metal salicide layer on gate, source and drain regions of transistors formed in the transistor region. -
Planarized insulation layer 120 further comprises a capping layer (not shown) formed ontransistor 110. The capping layer typically comprises a stacked structure including an undoped silicate glass (USG) film and a SiON film.Planarized insulation layer 120 still further comprises a plasma-enhanced tetraethylorthosilicated glass (PE-TEOS) film used as a top layer for planarizing the upper surface ofplanarized insulation layer 120. - An
intermetal insulation layer 130 is formed onplanarized insulation layer 120 over the photodiode region and the transistor region.Intermetal insulation layer 130 includes three sequentiallystacked insulation films - A
wire layer 140 including a plurality of metal wire layers 142, 144, 146 and 148 is formed insideintermetal insulation layer 130.Metal wire layer 142 is formed onplanarized insulation layer 120 by penetratinginsulation film 132,metal wire layer 144 is formed oninsulation film 132 by penetratinginsulation film 134,metal wire layer 146 is formed oninsulation film 134 by penetratinginsulation film 136, andmetal wire layer 148 is formed oninsulation film 136. - Although
wire layer 140 has four (4) layers in the embodiment shown inFIG. 2 , the number of layers inwire layer 140 and the number of corresponding layers inintermetal insulation layer 130 can vary. -
Insulation films Wire layer 148 is covered by apassivation layer 150, which also typically comprises a film containing oxide, nitride, or oxide and nitride. - An
inner lens 160 is formed in the photodiode region oppositephotodiode 104. Preferably,inner lens 160 is a convex lens and is formed on the same plane asmetal wire layer 142.Inner lens 160 is formed among the plurality ofinsulation films intermetal insulation layer 130.Inner lens 160 preferably comprises an oxide layer. - A transparent
optical region 170 coveringinner lens 160 is formed by penetratingintermetal insulation layer 130 aboveinner lens 160. Transparentoptical region 170 is formed of a different material fromintermetal insulation layer 130. Preferably, transparentoptical region 170 is formed of a material having a different refractive index frominner lens 160. - Transparent
optical region 170 is typically formed of an organic polymer compound. For example, it may be formed of Cytop™ (Ashahi Glass Company) and a polymethyl methacrylate (PMMA) polymer. Cytop™ is a fluoro polymer having a ring shape. Preferably, a material having a lower refractive index thaninner lens 160, such as Cytop™ polymer, is used to form transparentoptical region 170. - A
planarized layer 172 is formed on transparentoptical region 170 andmetal wire layer 140. Acolor filter 180 is formed onplanarized layer 172.Planarized layer 172 is formed of the same material as transparentoptical region 170. - A
micro lens 190 is formed oncolor filter 180 facingphotodiode 104.Micro lens 190 may be formed of a TMR type resin (Tokyo Ohka Kogyo, Co.) or a MFR type resin (Japan Synthetic Rubber Corporation). - In accordance with the embodiment of the invention shown in
FIG. 2 , a transparent optical path is provided in the pixel sensor by forming convexinner lens 160 as a part ofintermetal insulation layer 130 and forming transparentoptical region 170 oninner lens 160 of a different material fromintermetal insulation layer 130. In particular, transparentoptical region 170 is formed of a material having a lower refractive index thaninner lens 160. The pixel sensor shown inFIG. 2 is able to concentrate light onphotodiode 104 throughinner lens 160. -
FIG. 3 is a diagram ofpixel sensor 10 in accordance with another embodiment of the present invention. The pixel sensor shown inFIG. 3 has the same structure as the pixel sensor shown inFIG. 2 , except that a transparentoptical liner 262 is included betweeninner lens 160 and transparentoptical region 170. - Transparent
optical liner 262 is formed along the upper surface ofinner lens 160 with the same convex contour asinner lens 160. - Transparent
optical liner 262 is preferably formed using silicon nitride, silicon oxide-nitride, or an organic polymer compound. Transparentoptical liner 262 is typically formed of a material having a different refractive index frominner lens 160 and transparentoptical region 170. Preferably, transparentoptical liner 262 is formed of a material having lower refractive index thaninner lens 160, and a higher refractive index than transparentoptical region 170. For example, whereinner lens 160 is formed of an oxide film, transparentoptical liner 262 is formed of a Cytop™ type polymer. - In accordance with the embodiment of the invention shown in
FIG. 3 , the pixel sensor includesinner lens 160, transparentoptical liner 262 oninner lens 160 and transparentoptical region 170 on transparentoptical liner 262. Transparentoptical liner 262 and transparentoptical region 170 are preferably formed of a material having a lower refractive index thaninner lens 160 and transparentoptical region 170 is preferably formed with a material having lower refractive index than transparentoptical liner 262. Accordingly, a CMOS image sensor having the pixel sensor shown inFIG. 3 provides concentrated light onphotodiode 104. Transparentoptical liner 262 betweeninner lens 160 and transparentoptical region 170 improves the optical sensitivity of the sensor by concentrating incident light onphotodiode 104. -
FIG. 4 is a cross-sectional view of the pixel sensor shown inFIG. 1 according to still another embodiment of the invention. The pixel sensor shown inFIG. 4 has the same structure as the pixel sensor shown inFIG. 2 , except thatinner lens 160 inFIG. 2 is replaced by aninner lens 360 inFIG. 4 .Inner lens 360 shown inFIG. 4 is a concave lens. - The pixel sensor shown in
FIG. 4 provides a transparent optical path by forming a concaveinner lens 360 amonginsulation films intermetal insulation layer 130 and forming transparentoptical region 170 oninner lens 360 using a different material fromintermetal insulation layer 130. Transparentoptical region 170 is preferably formed of a material having a higher refractive index thaninner lens 360. -
FIG. 5 is a diagram of a pixel sensor in accordance with still another embodiment of the present invention. The pixel sensor shown inFIG. 5 has the same structure as the pixel sensor shown inFIG. 4 , except for a transparentoptical liner 462 formed betweeninner lens 360 and transparentoptical region 170. - Transparent
optical liner 462 is formed with a concave shape on an upper surface ofinner lens 360. Transparentoptical liner 462 is preferably formed of silicon nitride, silicon oxide-nitride, or an organic polymer compound. In addition, transparentoptical liner 462 is preferably formed of a material having a different refractive index frominner lens 360 and transparentoptical region 170. Preferably, transparentoptical liner 462 is formed of a material having a higher refractive index thaninner lens 360 and a lower refractive index than transparentoptical region 170. For example, whereinner lens 360 is formed of an oxide film, transparentoptical liner 462 is formed of silicon nitride, silicon oxide nitride, or a PMMA type polymer. - The pixel sensor shown in
FIG. 5 provides efficiently concentrated light onphotodiode 104 by forming transparentoptical liner 462 betweeninner lens 360 and transparentoptical region 170. -
FIGS. 6A through 6D are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with an embodiment of the present invention. - Referring to
FIG. 6A , asemiconductor substrate 100 having a photodiode region and a transistor region is formed. Anisolation region 102 is formed onsemiconductor substrate 100, thereby defining an active region insemiconductor substrate 100. Then, an “n”type photodiode 104 is formed in the photodiode region on the surface ofsemiconductor substrate 100. Next, a p+ type HADregion 106 is formed on the “n”type photodiode 104, and a plurality of transistors are formed in the transistor region. For simplicity of illustration,FIG. 6A shows only asingle transistor 110. - An
insulation spacer 112 a is formed at a sidewall of agate 110 a oftransistor 110.Insulation spacer 112 a is formed by forming aninsulation layer 112 to cover the photodiode region and the transistor region aftergate 110 a is formed in the transistor region. Afterinsulation layer 112 is formed, a mask pattern such as a photoresist pattern (not shown) is formed oninsulation layer 112 to cover the photodiode region. Using the mask pattern,insulation layer 112 is etched back toform insulation spacer 112 a at the sidewall ofgate 110 a. Afterinsulation layer 112 is exposed by removing the photoresist pattern, insulation layers are stacked oninsulation layer 112 andtransistor 110 in the both the photodiode region and the transistor region, thereby forming aplanarized insulation layer 120 oninsulation layer 112 andtransistor 110. - After forming
planarized insulation layer 120, anintermetal insulation layer 130 is formed to coverplanarized insulation layer 120 in the photodiode region and the transistor region, and ametal wire layer 140 is formed inintermetal insulation layer 130.Intermetal insulation layer 130 comprises a plurality of stackedinsulation films metal wire layer 140 comprises a plurality of metal wire layers 142, 144, 146, and 148 formed betweeninsulation films - A
passivation layer 150 is formed onintermetal insulation layer 130 andmetal wire layer 148.Passivation layer 150 has a stacked structure including an oxide layer of 1500 Å thickness and a nitride layer of 2000 Å thickness. - Referring to
FIG. 6B , aphotoresist pattern 152 is formed onpassivation layer 150, thereby exposing a portion ofpassivation layer 150 in the photodiode region.Passivation layer 150 andintermetal insulation layer 130 are then etched by plasma etching usingphotoresist pattern 152 as an etching mask, thereby forming acavity 154 inintermetal insulation layer 130. - Where a target etching region of
intermetal insulation layer 130 is formed of only an oxide film,cavity 154 may be formed by plasma etching method using an etching gas including of C4F8, O2, or Ar. For example, a “Unity85DD” device manufactured by Tokyo Electronics (TEL) may be used for the plasma etching. - A
bottom surface 154 a ofcavity 154 has a predetermined curvature forming aninner lens 160. The profile ofbottom surface 154 a incavity 154 is controlled by adjusting a ratio of O2 gas to C4F8 gas in the etching gas. For example,bottom surface 154 a ofcavity 154 is made convex by increasing the relative amount of O2 gas in the etching gas. On the other hand,bottom surface 154 a ofcavity 154 is made concave by increasing the relative amount of C4F8 gas in the etching gas. Accordingly, in the embodiment shown inFIG. 6B , the O2 content in the etching gas used to formcavity 154 is relatively high. As a result,bottom surface 154 a is convex. For example, about 18 standard cubic centimeters per minute (sccm) of C4F8 gas and about 10 sccm of O2 gas are used to form a planarized bottom surface ofcavity 154. For aconvex bottom surface 154 a, less than 18 sccm of C4F8 and more than 10 sccm of O2 are used. - Where the target etching region of
intermetal insulation layer 130 is formed of a compound film including an oxide film and a nitride film, thecavity 154 is formed by plasma etching using an etching gas comprising CF4, CH2F2, CO and O2, an etching gas comprising C5F8, O2 and Ar, or an etching gas comprising CF4, CH2F2, O2 or CO. For the plasma etching, a parallel flat plate type plasma etching device such as “Unity85SS” from Tokyo Electronics (TEL) is used. The profile ofbottom surface 154 a ofcavity 154 is controlled by adjusting the ratio of O2 gas to carbon gas in the etching gas. That is,bottom surface 154 a ofcavity 154 is made convex by increasing the relative concentration of O2 gas in the etching gas.Bottom surface 154 a ofcavity 154 is made concave by increasing the relative concentration of carbon gas. -
Cavity 154 is often formed to have a taperedsidewall 154 b.Tapered sidewall 154 b is typically formed by adding a carbon-rich gas such as CO, CH2F2, CHF3, or CH3F to the etching gas. - Where a “Unity85DD” etching device is used to form
cavity 154, the plasma etching is carried out with an RF power of about 1700W and a pressure of about 42 mT. - Where a “Unity85SS” etching device is used to form
cavity 154, the plasma etching may be carried out under various different conditions. For example, where a distance between a top electrode and a bottom electrode in the device is about 30 mm, the plasma etching may be carried out with an RF power of about 1500Ws to 1700Wb and a pressure of about 30 mT. Alternatively, the plasma etching may be carried out with an RF power of about 2000Ws and 1900Wb and a pressure of about 30 mT, or an RF power of about 1000Ws and 300Wb and a pressure of about 30 mT. - Referring to
FIG. 6C ,photoresist pattern 152 is removed. Then, a transparent optical material is coated inside ofcavity 154 and onpassivation layer 150 to form a transparentoptical region 170 and aplanarized layer 172. Transparentoptical region 170 fillscavity 154, andplanarized layer 172 coversmetal wire layer 140 in the transistor region. Transparentoptical region 170 andplanarized layer 172 are formed by spin coating. Transparentoptical region 170 is typically formed of an organic polymer compound such Cytop™ or a PMMA polymer. For example, whereinner lens 160 includes an oxide film formed by chemical vapor deposition, Cytop™ is used to form transparentoptical region 170. Cytop™ has a lower refractive index than the oxide film used to formintermetal insulation layer 130. The oxide film has a refractive index of about 1.45 and Cytop™ has a refractive index of about 1.34. - Referring to
FIG. 6D , acolor filter 180 is formed onplanarized layer 172 and amicro lens 190 is formed oncolor filter 180 abovephotodiode 104. -
FIGS. 7A and 7B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with another embodiment of the present invention. - Referring to
FIG. 7A ,cavity 154 is formed according to the method described with reference toFIGS. 6A and 6B . Oncecavity 154 is formed,photoresist pattern 152 is removed and a transparentoptical liner 262 is formed to a predetermined thickness onbottom surface 154 a andsidewall 154 b ofcavity 154. Various properties of transparentoptical liner 262 were explained previously with reference toFIG. 3 . - Referring to
FIG. 7B , a transparentoptical region 170 and aplanarized layer 172 are formed by coating a transparent optical material on transparentoptical liner 262 according to the method explained with reference toFIG. 6C . Once planarizedlayer 172 is formed,color filter 180 andmicro lens 190 are formed onplanarized layer 172 according to the method explained with reference toFIG. 6D . -
FIGS. 8A and 8B are diagrams of illustrating a method of manufacturing a CMOS image sensor in accordance with yet another embodiment of the present invention. - As shown in
FIG. 8A ,cavity 154 is formed using the same method described previously with reference toFIGS. 6A through 6D . When forming thecavity 154, the relative concentration of O2 gas in the etching gas is controlled to give thebottom surface 154 a a concave shape. - Referring to
FIG. 8B ,photoresist pattern 152 is removed. Afterphotoresist pattern 152 is removed, transparentoptical region 170 andplanarized layer 172 are formed insidecavity 154 and onpassivation layer 150 by depositing a transparent optical material.Color filter 180 andmicro lens 190 are formed onplanarized layer 172. -
FIGS. 9A and 9B are diagrams illustrating a method of manufacturing a CMOS image sensor in accordance with still another embodiment of the present invention. - Referring
FIG. 9A ,cavity 154 is formed using methods previously described in relation toFIGS. 6A through 6D . Oncecavity 154 is formed, photo-resistpattern 152 is removed using the method explained with reference toFIG. 8A . Next, a transparentoptical liner 462 is formed to a predetermined thickness onbottom surface 154 a andsidewall 154 b ofcavity 154. - Referring to
FIG. 9B , transparentoptical region 170 andplanarized layer 172 are formed on transparentoptical liner 462 by depositing a transparent optical material according to the method described with reference toFIG. 6C . Then,color filter 180 andmicro lens 190 are formed onplanarized layer 172 using the method explained with reference toFIG. 6D . - As mentioned above, a CMOS image sensor according to embodiments of the present invention includes a pixel sensor having a convex or concave lens as a part of intermetal insulation layer between the photodiode and the micro lens. The pixel sensor provides a transparent optical path by forming a transparent optical region penetrating an intermetal insulation layer and formed on the inner lens. The transparent optical region is formed of a transparent optical material which is different from a material used to form the intermetal insulation layer. Accordingly, the CMOS image sensor provides effective light concentration on the photodiode. In addition, the CMOS image sensor provides high optical sensitivity by concentrating light, using a transparent optical liner placed between the inner lens and the transparent optical region.
- The foregoing exemplary embodiments are teaching examples. Those of ordinary skill in the art will understand that various changes in form and details may be made to the exemplary embodiments without departing from the scope of the present invention which is defined by the following claims.
Claims (21)
1. A complementary metal oxide semiconductor (CMOS) image sensor, comprising:
a substrate having a photodiode region and a transistor region;
a photodiode formed in the photodiode region;
a transistor formed in the transistor region;
a planarized insulation layer covering the photodiode and the plurality of transistors;
an intermetal insulation layer formed from a first material on the planarized insulation layer;
a metal wire layer formed on the transistor region at least partially within the intermetal insulation layer;
an inner lens formed on the planarized insulation layer over the photodiode as part of the intermetal insulation layer; and,
a transparent optical region formed from a second material different from the first material and formed at least partially within the intermetal insulation layer over the inner lens.
2. The CMOS image sensor of claim 1 , wherein the inner lens is a convex lens.
3. The CMOS image sensor of claim 1 , wherein the inner lens is a concave lens.
4. The CMOS image sensor of claim 1 , wherein the intermetal insulation layer comprises a film formed from at least one material selected from a group consisting of an oxide and a nitride.
5. The CMOS image sensor of claim 4 , wherein the inner lens is formed from an oxide film.
6. The CMOS image sensor of claim 1 , wherein the transparent optical region is formed from a material having a different refractive index from that of the inner lens.
7. The CMOS image sensor of claim 6 , wherein the inner lens is a convex lens and the transparent optical region is formed of a material having a lower refractive index than the inner lens.
8. The CMOS image sensor of claim 6 , wherein the inner lens is a concave lens and the transparent optical region is formed of a material having a higher refractive index than the inner lens.
9. The CMOS image sensor of claim 6 , wherein the inner lens is formed of an oxide film and the transparent optical region is formed of an organic polymer compound.
10. The CMOS image sensor of claim 1 , further comprising:
a transparent optical liner formed between the inner lens and the transparent optical region.
11. The CMOS image sensor of claim 10 , where in the transparent optical liner is formed of a material having a different refractive index from the inner lens and the transparent optical region.
12. The CMOS image sensor of claim 11 , wherein the transparent optical liner is formed of a silicon nitride, a silicon oxide-nitride, or an organic polymer compound.
13. The CMOS image sensor of claim 10 , wherein the inner lens is formed of an oxide film, the transparent optical liner is formed of a silicon nitride, a silicon oxide-nitride, or an organic polymer compound, and the transparent optical region is formed of an organic polymer compound.
14. The CMOS image sensor of claim 10 , wherein the inner lens is a convex lens and the transparent optical liner is formed with a convex shape on an upper surface of the inner lens.
15. The CMOS image sensor of claim 14 , wherein the transparent optical liner has lower refractive index than the inner lens and the transparent optical region has a lower refractive index than the transparent optical liner.
16. The CMOS image sensor of claim 10 , wherein the inner lens is a concave lens and the transparent optical liner is formed with a concave shape on an upper surface of the inner lens.
17. The CMOS image sensor of claim 16 , wherein the transparent optical liner has a higher refractive index than the inner lens and the transparent optical region has a higher refractive index than the transparent optical liner.
18. The CMOS image sensor of claim 18 , wherein the inner lens is formed on a common plane with the metal wire layer.
19. The CMOS image sensor of claim 1 , further comprising:
a color filter formed on the transparent optical region; and,
a micro lens formed on the color filter and opposite the photodiode.
20. The CMOS image sensor of claim 19 , further comprising a planarized layer covering the metal wire layer and the transparent optical region;
wherein the color filter is formed on the planarized layer.
21. The CMOS image sensor of claim 20 , wherein the planarized layer is formed of the same material as the transparent optical region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/782,085 US20070262366A1 (en) | 2004-09-11 | 2007-07-24 | Cmos image sensor and method of manufacturing same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0072819 | 2004-09-11 | ||
KR1020040072819A KR100652379B1 (en) | 2004-09-11 | 2004-09-11 | CMOS image sensor and manufacturing method thereof |
US11/207,759 US7262073B2 (en) | 2004-09-11 | 2005-08-22 | CMOS image sensor and method of manufacturing same |
US11/782,085 US20070262366A1 (en) | 2004-09-11 | 2007-07-24 | Cmos image sensor and method of manufacturing same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/207,759 Division US7262073B2 (en) | 2004-09-11 | 2005-08-22 | CMOS image sensor and method of manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070262366A1 true US20070262366A1 (en) | 2007-11-15 |
Family
ID=36159687
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/207,759 Expired - Fee Related US7262073B2 (en) | 2004-09-11 | 2005-08-22 | CMOS image sensor and method of manufacturing same |
US11/782,085 Abandoned US20070262366A1 (en) | 2004-09-11 | 2007-07-24 | Cmos image sensor and method of manufacturing same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/207,759 Expired - Fee Related US7262073B2 (en) | 2004-09-11 | 2005-08-22 | CMOS image sensor and method of manufacturing same |
Country Status (4)
Country | Link |
---|---|
US (2) | US7262073B2 (en) |
JP (1) | JP5013391B2 (en) |
KR (1) | KR100652379B1 (en) |
CN (1) | CN1747178B (en) |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080135732A1 (en) * | 2006-12-08 | 2008-06-12 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
US20080251707A1 (en) * | 2001-10-23 | 2008-10-16 | Tessera North America | Optical chassis, camera having an optical chassis, and associated methods |
US20100059842A1 (en) * | 2008-09-05 | 2010-03-11 | Ha-Kyu Choi | Image sensor and manufacturing method thereof |
US20100187403A1 (en) * | 2009-01-29 | 2010-07-29 | Sony Corporation | Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus |
US20100200738A1 (en) * | 2007-10-03 | 2010-08-12 | Canon Kabushiki Kaisha | Photoelectric conversion device and imaging system |
US20100230728A1 (en) * | 2006-08-31 | 2010-09-16 | Canon Kabushiki Kaisha | Manufacturing method of photoelectric conversion device |
US20100272393A1 (en) * | 2001-10-23 | 2010-10-28 | Tessera North America, Inc. | Wafer based optical chassis and associated methods |
US20100314704A1 (en) * | 2009-06-10 | 2010-12-16 | Sony Corporation | Solid-state imaging device and method for making the same, and imaging apparatus |
US20100320552A1 (en) * | 2009-06-19 | 2010-12-23 | Pixart Imaging Inc. | CMOS Image Sensor |
US20110001206A1 (en) * | 2009-07-06 | 2011-01-06 | PixArt Imaging Incorporation, R.O.C. | Image sensor device and method for making same |
US20120018833A1 (en) * | 2010-07-21 | 2012-01-26 | Samsung Electronics Co., Ltd. | Light-Guiding Structure, Image Sensor Including The Light-Guiding Structure, And Processor-Based System Including The Image Sensor |
US20120068289A1 (en) * | 2010-03-24 | 2012-03-22 | Sionyx, Inc. | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods |
CN103219343A (en) * | 2012-01-23 | 2013-07-24 | 奥普蒂兹公司 | Multi-layer polymer lens and method of making same |
US8704331B2 (en) | 2009-05-12 | 2014-04-22 | Pixart Imaging Inc., R.O.C. | MEMS integrated chip with cross-area interconnection |
US20150372049A1 (en) * | 2014-06-23 | 2015-12-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US9673250B2 (en) | 2013-06-29 | 2017-06-06 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9741761B2 (en) | 2010-04-21 | 2017-08-22 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
US9762830B2 (en) | 2013-02-15 | 2017-09-12 | Sionyx, Llc | High dynamic range CMOS image sensor having anti-blooming properties and associated methods |
US9806115B2 (en) | 2016-03-24 | 2017-10-31 | SK Hynix Inc. | Image sensor with inner light-condensing scheme |
US9905599B2 (en) | 2012-03-22 | 2018-02-27 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US10741399B2 (en) | 2004-09-24 | 2020-08-11 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
WO2022050897A3 (en) * | 2020-08-27 | 2022-07-07 | Compoundtek Pte. Ltd. | Semiconductor device and fabricating method therefor |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4682568B2 (en) * | 2004-09-16 | 2011-05-11 | ソニー株式会社 | Manufacturing method of solid-state imaging device |
KR100672730B1 (en) * | 2005-07-15 | 2007-01-24 | 동부일렉트로닉스 주식회사 | CMOS image sensor and method for manufacturing the same |
KR100731128B1 (en) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Method for manufacturing cmos image sensor |
JP4953635B2 (en) * | 2006-01-06 | 2012-06-13 | キヤノン株式会社 | Manufacturing method of solid-state imaging device |
US20070200055A1 (en) * | 2006-02-24 | 2007-08-30 | Tower Semiconductor Ltd. | Via wave guide with cone-like light concentrator for image sensing devices |
US7358583B2 (en) | 2006-02-24 | 2008-04-15 | Tower Semiconductor Ltd. | Via wave guide with curved light concentrator for image sensing devices |
JP2008034627A (en) * | 2006-07-28 | 2008-02-14 | Fujifilm Corp | Photodiode, and making method thereof |
KR100763232B1 (en) * | 2006-09-20 | 2007-10-04 | 삼성전자주식회사 | Method of fabricating image sensor |
KR100937654B1 (en) * | 2006-12-12 | 2010-01-19 | 동부일렉트로닉스 주식회사 | Image Sensor and Method of Manufaturing Thereof |
US7803647B2 (en) * | 2007-02-08 | 2010-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical transmission improvement on multi-dielectric structure in advance CMOS imager |
US8183510B2 (en) * | 2008-02-12 | 2012-05-22 | Omnivision Technologies, Inc. | Image sensor with buried self aligned focusing element |
US7589306B2 (en) * | 2008-02-12 | 2009-09-15 | Omnivision Technologies, Inc. | Image sensor with buried self aligned focusing element |
JP5408954B2 (en) * | 2008-10-17 | 2014-02-05 | キヤノン株式会社 | Imaging apparatus and imaging system |
KR101545638B1 (en) | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | Image sensor and fabricating method thereof device comprising the image sensor and fabricating method thereof |
KR20100079739A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Image sensor and method for manufacturing the sensor |
JP5434252B2 (en) * | 2009-05-14 | 2014-03-05 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
JP2011023409A (en) * | 2009-07-13 | 2011-02-03 | Panasonic Corp | Solid-state imaging device |
US8314469B2 (en) | 2009-09-04 | 2012-11-20 | United Microelectronics Corp. | Image sensor structure with different pitches or shapes of microlenses |
KR101832119B1 (en) * | 2010-02-19 | 2018-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
US20120018831A1 (en) * | 2010-07-20 | 2012-01-26 | Himax Imaging, Inc. | Light pipe fabrication with improved sensitivity |
US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
US20130010165A1 (en) | 2011-07-05 | 2013-01-10 | United Microelectronics Corp. | Optical micro structure, method for fabricating the same and applications thereof |
US9312292B2 (en) | 2011-10-26 | 2016-04-12 | United Microelectronics Corp. | Back side illumination image sensor and manufacturing method thereof |
US8318579B1 (en) | 2011-12-01 | 2012-11-27 | United Microelectronics Corp. | Method for fabricating semiconductor device |
CN102522415A (en) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | CMOS (complementary metal oxide semiconductor) image sensor and manufacturing method thereof |
US8815102B2 (en) | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
JP6021439B2 (en) | 2012-05-25 | 2016-11-09 | キヤノン株式会社 | Solid-state imaging device |
US9401441B2 (en) | 2012-06-14 | 2016-07-26 | United Microelectronics Corporation | Back-illuminated image sensor with dishing depression surface |
US8779344B2 (en) | 2012-07-11 | 2014-07-15 | United Microelectronics Corp. | Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically |
US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
US9279923B2 (en) | 2013-03-26 | 2016-03-08 | United Microelectronics Corporation | Color filter layer and method of fabricating the same |
US9537040B2 (en) | 2013-05-09 | 2017-01-03 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof |
US9129876B2 (en) | 2013-05-28 | 2015-09-08 | United Microelectronics Corp. | Image sensor and process thereof |
US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
US9841319B2 (en) | 2013-11-19 | 2017-12-12 | United Microelectronics Corp. | Light detecting device |
JP6300564B2 (en) * | 2014-02-18 | 2018-03-28 | キヤノン株式会社 | Solid-state imaging device and manufacturing method thereof |
US9582312B1 (en) * | 2015-02-04 | 2017-02-28 | Amazon Technologies, Inc. | Execution context trace for asynchronous tasks |
WO2018088281A1 (en) * | 2016-11-14 | 2018-05-17 | パナソニック・タワージャズセミコンダクター株式会社 | Solid-state imaging device and manufacturing method for same |
US9935146B1 (en) | 2016-12-19 | 2018-04-03 | Semiconductor Components Industries, Llc | Phase detection pixels with optical structures |
JP2019091817A (en) * | 2017-11-15 | 2019-06-13 | シャープ株式会社 | Solid-state imaging device and method of manufacturing the same |
KR102541294B1 (en) * | 2018-03-26 | 2023-06-12 | 에스케이하이닉스 주식회사 | Image Sensor Including a Phase-Difference Detection Pixel Having a Lining Layer |
KR102507207B1 (en) * | 2018-04-11 | 2023-03-09 | 에스케이하이닉스 주식회사 | Image Sensor Including A Passing Filter Having A Lower Refractive Index |
US11069729B2 (en) * | 2018-05-01 | 2021-07-20 | Canon Kabushiki Kaisha | Photoelectric conversion device, and equipment |
TWI672806B (en) * | 2018-06-22 | 2019-09-21 | 晶相光電股份有限公司 | Global shutter cmos image sensor and method for forming the same |
US10763297B1 (en) * | 2019-05-31 | 2020-09-01 | Int Tech Co., Ltd. | Optical sensor |
US20230411540A1 (en) * | 2022-06-16 | 2023-12-21 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of making |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371397A (en) * | 1992-10-09 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Solid-state imaging array including focusing elements |
US20020005471A1 (en) * | 2000-04-21 | 2002-01-17 | Ryoji Suzuki | Solid-state pickup element and method for producing the same |
US20040012707A1 (en) * | 1997-09-29 | 2004-01-22 | Takashi Fukusho | Solid-state image pickup device |
US20040140564A1 (en) * | 2003-01-16 | 2004-07-22 | Soo-Geun Lee | Structure of a CMOS image sensor and method for fabricating the same |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2841037B2 (en) | 1995-07-26 | 1998-12-24 | エルジイ・セミコン・カンパニイ・リミテッド | Manufacturing method of CCD solid-state imaging device |
KR0172849B1 (en) | 1995-08-02 | 1999-02-01 | 문정환 | Solid state image sensing device and manufacturing method thereof |
JP2000164839A (en) * | 1998-11-25 | 2000-06-16 | Sony Corp | Solid camera device |
JP2001094086A (en) * | 1999-09-22 | 2001-04-06 | Canon Inc | Photoelectric converter and fabrication method thereof |
JP2002064193A (en) * | 2000-08-22 | 2002-02-28 | Sony Corp | Solid-state imaging device and manufacturing method thereof |
JP2002151670A (en) * | 2000-08-30 | 2002-05-24 | Sony Corp | Solid-state image pickup device and manufacturing method |
JP2002110953A (en) * | 2000-10-04 | 2002-04-12 | Toshiba Corp | Solid-state imaging device |
JP2003007988A (en) * | 2001-06-19 | 2003-01-10 | Sharp Corp | Solid-state imaging device and method of manufacturing the same |
JP2003332548A (en) | 2002-05-16 | 2003-11-21 | Fuji Film Microdevices Co Ltd | Solid-state image pickup element and method of manufacturing the same |
JP4443865B2 (en) * | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | Solid-state imaging device and manufacturing method thereof |
JP4120543B2 (en) * | 2002-12-25 | 2008-07-16 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
JP4549195B2 (en) * | 2005-01-19 | 2010-09-22 | キヤノン株式会社 | Solid-state imaging device and manufacturing method thereof |
-
2004
- 2004-09-11 KR KR1020040072819A patent/KR100652379B1/en not_active IP Right Cessation
-
2005
- 2005-08-22 US US11/207,759 patent/US7262073B2/en not_active Expired - Fee Related
- 2005-09-09 JP JP2005262834A patent/JP5013391B2/en not_active Expired - Fee Related
- 2005-09-12 CN CN2005101038384A patent/CN1747178B/en not_active Expired - Fee Related
-
2007
- 2007-07-24 US US11/782,085 patent/US20070262366A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371397A (en) * | 1992-10-09 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Solid-state imaging array including focusing elements |
US20040012707A1 (en) * | 1997-09-29 | 2004-01-22 | Takashi Fukusho | Solid-state image pickup device |
US20020005471A1 (en) * | 2000-04-21 | 2002-01-17 | Ryoji Suzuki | Solid-state pickup element and method for producing the same |
US20040140564A1 (en) * | 2003-01-16 | 2004-07-22 | Soo-Geun Lee | Structure of a CMOS image sensor and method for fabricating the same |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US20100272393A1 (en) * | 2001-10-23 | 2010-10-28 | Tessera North America, Inc. | Wafer based optical chassis and associated methods |
US20080251707A1 (en) * | 2001-10-23 | 2008-10-16 | Tessera North America | Optical chassis, camera having an optical chassis, and associated methods |
US7961989B2 (en) * | 2001-10-23 | 2011-06-14 | Tessera North America, Inc. | Optical chassis, camera having an optical chassis, and associated methods |
US8233757B2 (en) * | 2001-10-23 | 2012-07-31 | Digitaloptics Corporation East | Wafer based optical chassis and associated methods |
US10741399B2 (en) | 2004-09-24 | 2020-08-11 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US20100230728A1 (en) * | 2006-08-31 | 2010-09-16 | Canon Kabushiki Kaisha | Manufacturing method of photoelectric conversion device |
US7842988B2 (en) * | 2006-08-31 | 2010-11-30 | Canon Kabushiki Kaisha | Manufacturing method of photoelectric conversion device |
US8525098B2 (en) | 2006-12-08 | 2013-09-03 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
US8003929B2 (en) | 2006-12-08 | 2011-08-23 | Sony Corporation | Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera |
US20080135732A1 (en) * | 2006-12-08 | 2008-06-12 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
US8981275B2 (en) | 2006-12-08 | 2015-03-17 | Sony Corporation | Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera |
US20100025571A1 (en) * | 2006-12-08 | 2010-02-04 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
US7973271B2 (en) * | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
US20100200738A1 (en) * | 2007-10-03 | 2010-08-12 | Canon Kabushiki Kaisha | Photoelectric conversion device and imaging system |
US8872086B2 (en) * | 2007-10-03 | 2014-10-28 | Canon Kabushiki Kaisha | Photoelectric conversion device and imaging system |
US20100059842A1 (en) * | 2008-09-05 | 2010-03-11 | Ha-Kyu Choi | Image sensor and manufacturing method thereof |
US20100187403A1 (en) * | 2009-01-29 | 2010-07-29 | Sony Corporation | Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus |
US8704156B2 (en) | 2009-01-29 | 2014-04-22 | Sony Corporation | Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus |
US8530812B2 (en) * | 2009-01-29 | 2013-09-10 | Sony Corporation | Solid-state image pickup apparatus, electronic apparatus, and method of manufacturing a solid-state image pickup apparatus |
US8729660B2 (en) | 2009-05-12 | 2014-05-20 | Pixart Imaging Inc. | MEMS integrated chip with cross-area interconnection |
US8704331B2 (en) | 2009-05-12 | 2014-04-22 | Pixart Imaging Inc., R.O.C. | MEMS integrated chip with cross-area interconnection |
US8384173B2 (en) * | 2009-06-10 | 2013-02-26 | Sony Corporation | Solid-state imaging device and method for making the same, and imaging apparatus |
US20100314704A1 (en) * | 2009-06-10 | 2010-12-16 | Sony Corporation | Solid-state imaging device and method for making the same, and imaging apparatus |
US20100320552A1 (en) * | 2009-06-19 | 2010-12-23 | Pixart Imaging Inc. | CMOS Image Sensor |
US8324700B2 (en) | 2009-07-06 | 2012-12-04 | Pixart Imaging Incorporation | Image sensor device and method for making same |
US20110001206A1 (en) * | 2009-07-06 | 2011-01-06 | PixArt Imaging Incorporation, R.O.C. | Image sensor device and method for making same |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US10361232B2 (en) | 2009-09-17 | 2019-07-23 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US20120068289A1 (en) * | 2010-03-24 | 2012-03-22 | Sionyx, Inc. | Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods |
US10229951B2 (en) | 2010-04-21 | 2019-03-12 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9741761B2 (en) | 2010-04-21 | 2017-08-22 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
US10505054B2 (en) | 2010-06-18 | 2019-12-10 | Sionyx, Llc | High speed photosensitive devices and associated methods |
US8785992B2 (en) * | 2010-07-21 | 2014-07-22 | Samsung Electronics Co., Ltd. | Light-guiding structure, image sensor including the light-guiding structure, and processor-based system including the image sensor |
US20120018833A1 (en) * | 2010-07-21 | 2012-01-26 | Samsung Electronics Co., Ltd. | Light-Guiding Structure, Image Sensor Including The Light-Guiding Structure, And Processor-Based System Including The Image Sensor |
US9666636B2 (en) | 2011-06-09 | 2017-05-30 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US10269861B2 (en) | 2011-06-09 | 2019-04-23 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
CN103219343A (en) * | 2012-01-23 | 2013-07-24 | 奥普蒂兹公司 | Multi-layer polymer lens and method of making same |
US10224359B2 (en) | 2012-03-22 | 2019-03-05 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
US9905599B2 (en) | 2012-03-22 | 2018-02-27 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
US9762830B2 (en) | 2013-02-15 | 2017-09-12 | Sionyx, Llc | High dynamic range CMOS image sensor having anti-blooming properties and associated methods |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9673250B2 (en) | 2013-06-29 | 2017-06-06 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US10347682B2 (en) | 2013-06-29 | 2019-07-09 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US11069737B2 (en) | 2013-06-29 | 2021-07-20 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US20150372049A1 (en) * | 2014-06-23 | 2015-12-24 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
US9806115B2 (en) | 2016-03-24 | 2017-10-31 | SK Hynix Inc. | Image sensor with inner light-condensing scheme |
WO2022050897A3 (en) * | 2020-08-27 | 2022-07-07 | Compoundtek Pte. Ltd. | Semiconductor device and fabricating method therefor |
Also Published As
Publication number | Publication date |
---|---|
CN1747178B (en) | 2010-11-10 |
CN1747178A (en) | 2006-03-15 |
US20060054946A1 (en) | 2006-03-16 |
JP2006080533A (en) | 2006-03-23 |
KR100652379B1 (en) | 2006-12-01 |
KR20060023897A (en) | 2006-03-15 |
US7262073B2 (en) | 2007-08-28 |
JP5013391B2 (en) | 2012-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7262073B2 (en) | CMOS image sensor and method of manufacturing same | |
US7612395B2 (en) | CMOS image sensors | |
US7332368B2 (en) | Light guide for image sensor | |
US20180047778A1 (en) | Photoelectric conversion device and method for producing photoelectric conversion device | |
US6903395B2 (en) | Semiconductor device including interlayer lens | |
TWI399849B (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
US9859323B1 (en) | Complementary metal-oxide-semiconductor (CMOS) image sensor | |
US6737719B1 (en) | Image sensor having combination color filter and concave-shaped micro-lenses | |
US8013370B2 (en) | Solid-state imaging device | |
US20090101947A1 (en) | Image sensor device and fabrication method thereof | |
US8852987B2 (en) | Method of manufacturing image pickup device | |
US9391227B2 (en) | Manufacturing method of semiconductor device | |
US7972890B2 (en) | Methods of manufacturing image sensors | |
US20060148123A1 (en) | Method for fabricating CMOS image sensor | |
JP4967291B2 (en) | Method for manufacturing solid-state imaging device | |
US20090166692A1 (en) | Cmos image sensor and method for manufacturing the same | |
US20070099371A1 (en) | CMOS image sensor and manufacturing method thereof | |
US20040082096A1 (en) | Method for forming an image sensor having concave-shaped micro-lenses | |
US20070166868A1 (en) | Method of fabricating an image sensor | |
US20040080006A1 (en) | Image sensor having concave-shaped micro-lenses | |
US20240021654A1 (en) | Method for forming photoelectric conversion region of image sensing device | |
KR100817077B1 (en) | Method of fabricating cmos image sensor | |
JP2006114592A (en) | Solid-state image pick-up device | |
KR20110002994A (en) | Image sensor and fabricating method thereof | |
US20080157134A1 (en) | Cmos image sensor and fabricating method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |