US20080067662A1 - Modularized Die Stacking System and Method - Google Patents
Modularized Die Stacking System and Method Download PDFInfo
- Publication number
- US20080067662A1 US20080067662A1 US11/941,718 US94171807A US2008067662A1 US 20080067662 A1 US20080067662 A1 US 20080067662A1 US 94171807 A US94171807 A US 94171807A US 2008067662 A1 US2008067662 A1 US 2008067662A1
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/05—Flexible printed circuits [FPCs]
- H05K2201/056—Folded around rigid support or component
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10689—Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
- H05K3/363—Assembling flexible printed circuits with other printed circuits by soldering
Definitions
- the present invention relates to aggregating integrated circuits and, in particular, to stacking integrated circuits.
- a variety of techniques are used to stack integrated circuits. Some methods require special packages, while other techniques stack conventional packages and still others stack multiple die within a single package. In some stacks, the leads of the packaged integrated circuits are used to create a stack, while in other systems, added structures such as rails provide all or part of the interconnection between packages. In still other techniques, flexible conductors with certain characteristics are used to selectively interconnect packaged integrated circuits. In yet other methods, one IC is connected to another within a single plastic body from which leads or contacts emerge.
- the predominant package configuration employed during the past decade has encapsulated an integrated circuit (IC) in a plastic surround typically having a rectangular configuration.
- IC integrated circuit
- the enveloped integrated circuit is connected to the application environment through leads emergent from the edge periphery of the plastic encapsulation.
- Such “leaded packages” have been the constituent elements most commonly employed by techniques for stacking packaged integrated circuits.
- Leaded packages play an important role in electronics, but efforts to miniaturize electronic components and assemblies have driven development of technologies that preserve circuit board surface area. Because leaded packages have leads emergent from peripheral sides of the package, leaded packages occupy more than a minimal amount of circuit board surface area. Consequently, alternatives to leaded packages have recently gained market share.
- CSP chip scale packaging
- CSP CSP leads or contacts do not typically extend beyond the outline perimeter of the package.
- the absence of “leads” on package sides renders most stacking techniques devised for leaded packages inapplicable for CSP stacking.
- CSP has enabled reductions in size and weight parameters for many applications.
- micro ball grid array for flash and SRAM and wirebond on tape or rigid laminate CSPs for SRAM or EEPROM have been employed in a variety of applications.
- CSP is a broad category including a variety of packages from near chip scale to die-sized packages such as the die sized ball grid array (DSBGA) recently described in proposed JEDEC standard 95-1 for DSBGA.
- DSBGA die sized ball grid array
- CSP technologies that aggregate integrated circuits in CSP technology have recently been developed. For example, Sharp, Hitachi, Mitsubishi and Intel support what are called the S-CSP specifications for flash and SRAM applications.
- the assignee of the present invention has developed previous systems for aggregating micro-BGA packages in space saving topologies.
- the assignee of the present invention has systems for stacking BGA packages on a DIMM in a RAMBUS environment.
- U.S. Pat. No. 6,262,895 B1 to Forthun (the “Forthun patent”) purports to disclose a technique for stacking chip scale packaged ICs.
- the Forthun patent discloses a “package” that exhibits a flex circuit wrapped partially about a CSP.
- the flex circuit is said to have pad arrays on upper and lower surfaces of the flex.
- the flex circuit of the Forthun “package” has a pad array on its upper surface and a pad array centrally located upon its lower surface. On the lower surface of the flex there are third and fourth arrays on opposite sides from the central lower surface pad array.
- a CSP contacts the pad array located on the upper surface of the flex circuit. As described in the Forthun patent, the contacts on the lower surface of the CSP are pushed through “slits” in the upper surface pads and advanced through the flex to protrude from the pads of the lower surface array and, therefore, the bottom surface of the package. Thus, the contacts of the CSP serve as the contacts for the package.
- the sides of the flex are partially wrapped about the CSP to adjacently place the third and fourth pad arrays above the upper major surface of the CSP to create from the combination of the third and fourth pad arrays, a fifth pad array for connection to another such package.
- a stacked module of CSPs created with the described packages will exhibit a flex circuit wrapped about each CSP in the module.
- the bad die problem is significant.
- Native as well as processing-acquired defects can lead to unacceptably high failure rates for stacks created by aggregating IC elements before testing the constituent members of the assembly.
- stacking techniques employ one or more unpackaged die, there is typically not an opportunity for adequate preassembly test before the constituent ICs of the assembly are aggregated. Then, testing typically reveals bad stacks, it does not prevent their assembly and consequent waste of resources.
- the present invention integrates an IC die and a flexible circuit structure into an integrated lower stack element that can be stacked with either further integrated lower stack element iterations or with pre-packaged ICs in any of a variety of package types.
- the present invention can be used to advantage where size minimization, thermal efficiency and or test before stacking are significant concerns.
- the present invention may be employed to stack similar or dissimilar integrated circuits and may be used to create modularized systems.
- an IC die is integrated with flex circuitry to create an integrated lower stack element.
- a die is positioned above the surface of portions of a pair of flex circuits. Connection is made between the die and the flex circuitry.
- a protective layer such as a molded plastic, for example, is formed to create a body that protects the flex-connected die and its connection to the flex. Connective elements are placed along the flex circuits to create an array of module contacts along the second side of the flex circuitry. Portions of the pair of flex circuits are positioned above the body to create an integrated lower stack element.
- the integrated lower stack element may be stacked either with further iterations of the integrated lower stack element or with pre-packaged ICS to create a multi-element stacked circuit module.
- the present invention may be employed to advantage in numerous configurations and combinations in modules provided for high-density memories or high capacity computing.
- FIG. 1 is an elevation view of module 10 devised in accordance with a preferred embodiment of the present invention.
- FIG. 2 depicts an exemplar connection of an integrated circuit die to one of two flex circuits in a preferred embodiment of the present invention.
- FIG. 3 depicts an elevation view of an integrated lower stack element in accordance with a preferred embodiment of the present invention.
- FIG. 4 depicts an exemplar integration of a die in a flip-chip configuration with flex circuitry in accordance with a preferred embodiment of the present invention.
- FIG. 5 depicts an exemplar construction details of an integrated lower stack element in accordance with a preferred embodiment of the present invention.
- FIG. 6 depicts an exemplar construction details of an integrated lower stack element in accordance with another preferred embodiment of the present invention.
- FIG. 7 depicts an exemplar conductive layer in a preferred flex circuitry employed in a preferred embodiment of the present invention.
- FIG. 1 is an elevation view of module 10 devised in accordance with a preferred embodiment of the present invention.
- Module 10 is comprised of integrated lower stack element 12 and upper IC element 14 .
- Upper IC element 14 that is depicted in FIG. 1 may be any of a variety of types and configurations of CSP such as, for example, those that are die-sized, as well those that are near chip-scale as well as the variety of ball grid array packages known in the art.
- Typical CSPs such as, for example, ball-grid-array (“BGA”), micro-ball-grid array (“ ⁇ BGA”), and fine-pitch ball grid array (“FBGA”) packages have an array of connective contacts embodied, for example, as leads, bumps, solder balls, or balls that extend from a lower surface of a plastic casing in any of several patterns and pitches. An external portion of the connective contacts is often finished with a ball of solder.
- upper IC element 14 is depicted as a CSP of a particular profile known to those in the art, but it should be understood that the figures are exemplary only.
- Upper IC element 14 need not be limited to traditional CSP packaging and as those of skill recognize the opportunity, the present invention is adaptable to future package configurations.
- the present invention is advantageously employed with memory circuits but may be employed to advantage with logic and computing circuits even where the constituent elements of module 10 are dissimilar.
- Upper IC element 14 is shown with upper IC contacts 19 .
- Integrated lower stack element 12 is shown with die 16 and connections 20 that connect die 16 to flex circuits 18 .
- Protective surround 22 is disposed to protect connections 20 and die 16 .
- protective surround 22 is a plastic surround.
- a body 23 is formed having lateral sides 21 and an upper surface 25 .
- Protective body 23 will, in a preferred embodiment, surround portions of die 16 that would otherwise be exposed to potential environmental damage.
- FIG. 2 depicts an exemplar connection of an integrated circuit die 16 to one of two flex circuits 18 in a preferred embodiment of the present invention to create a die-flex combination.
- a die-flex combination in accordance with the present invention may be devised in a variety of particular manners including using one or two flex circuits to provide connection to die 16 , as well as using flex circuitry having one or more conductive layers.
- the flex circuitry will articulate connective structures such as flex contacts and traces that will later be described.
- die pads 24 on die 16 are connected to flex attachments 26 of flex 18 by connections 20 which, in the illustrated exemplar, are wire bonding connections.
- Die pads 24 are just one type of die connective site that may be employed in the present invention. Other die connective sites such as flip-chip, tab and connective rings, balls, or pads may be employed. Die connective sites may also be construed to include combinations of such structures to provide a connective site for the die. Wire bonding is well known in the art and those of skill will appreciate that many other methods may be used to provide connections 20 between die 16 and the flex circuitry employed for the invention. For example, tab or flip-chip or other attachment techniques known in the art can be profitably used to implement connections 20 . Those of skill will also appreciate that die pads 24 of die 16 can be arranged in a variety of configurations across the IC. As is known in the art, through die pads 24 , die 16 expresses data and instructions as well as ground and voltage connections.
- Flex 18 may be configured to interconnect to die 16 with other connective configurations.
- flex attachments 26 may be placed on the side of flex circuits 18 opposite that shown in FIG. 2 to place the flex attachments 26 immediately adjacent to the surface of die 16 to provide direct connection between die 16 and flex circuitry 18 .
- two flex circuits 18 are employed but implementations of the invention can be devised using one flex circuit 18 .
- FIG. 3 depicts an elevation view of an integrated lower stack element 12 before its assembly into a module 10 .
- Die 16 is placed adjacent to flex circuits 18 and fixed in place with adhesive 28 .
- adhesive 28 A variety of adhesive methods are known in the art and, in a preferred embodiment, an adhesive is used that has thermally conductive properties.
- portions of flex circuits 18 A and 18 B are fixed to die 16 by adhesive 28 which may be a liquid or tape adhesive or may be placed in discrete locations across the package.
- adhesive 28 is thermally conductive.
- Adhesives that include a flux are used to advantage in some steps of assembly of module 10 .
- Layer 28 may also be a thermally conductive medium or body to encourage heat flow.
- module contacts 30 are fixed along flex circuits 18 A and 18 B opposite the side of the flex circuits nearest to which die 16 is adjacent.
- the shown preferred module contacts 30 are familiar to those in the art and may be comprised of eutectic, lead-free, solid copper, or other conductive materials.
- Other contact implementing structures may be used to create module contacts 30 as long as the conductive layer or layers of the flex circuitry can be connected to module contacts 30 to allow conveyance of the signals conducted in flex circuits 18 to be transmitted to an environment external to integrated lower stack element 12 .
- Balls are well understood, but other techniques and structures such as connective rings, built-up pads, or even leads may be placed along flex circuits 18 to create module contacts 30 to convey signals from module 10 to an external environment. Any of the standard JEDEC patterns may be implemented with module contacts 30 as well as custom arrays of module contacts for specialized applications.
- FIG. 4 depicts the integration of die 16 devised in a flip-chip configuration with two flex circuits 18 A and 18 B in accordance with a preferred embodiment of the present invention. Those of skill will understand that the depiction of FIG. 4 is not drawn to scale. Die 16 exhibits die pads 24 along a lower surface of the die. Attached to die pads 24 are die connectors 32 which, in the depicted embodiment, are flip-chip balls or connectors. As shown, flex circuits 18 A and 18 B have module contacts 30 .
- Any flexible or conformable substrate with a conductive pattern may be used as a flex circuit in the invention.
- the preferred flex circuitry will employ more than one conductive layer, but the invention may be implemented with flex circuitry that has only a single conductive layer.
- flex circuit 18 is preferably a multi-layer flexible circuit structure that has at least two conductive layers. This is particularly appropriate where frequencies to be encountered are higher.
- the conductive layers are metal such as copper alloy 110 although any conductive material may be employed in this role.
- the use of plural conductive layers provides advantages such as the creation of a distributed capacitance across module 10 intended to reduce noise or bounce effects that can, particularly at higher frequencies, degrade signal integrity, as those of skill in the art will recognize.
- the entire flex circuit may be flexible or, as those of skill in the art will recognize, a PCB structure made flexible in certain areas to allow conformability around body 23 and rigid in other areas for planarity along surfaces may be employed as an alternative flex circuitry in the present invention.
- structures known as rigid-flex may be employed.
- Flex circuits 18 A and 18 B shown in FIG. 4 are comprised of multiple layers. Depicted flex circuits 18 A and 18 B have a first outer surface 36 and a second outer surface 38 . The depicted preferred flex circuits 18 A and 18 B have two conductive layers interior to first and second outer surfaces 36 and 38 . In the depicted preferred embodiment, first conductive layer 40 and second conductive layer 42 are interior to first and second outer surfaces 36 and 38 , respectively. Intermediate support layer 44 lies between first conductive layer 40 and second conductive layer 42 . There may be more than one intermediate layer, but an intermediate layer of polyimide is preferred. Preferably, the intermediate layer provides mechanical support for the flex circuitry.
- a flex circuit 18 may be devised for use in the present invention that lacks first outer surface 36 and/or second outer surface 38 .
- first conductive layer 40 will be on the surface of the particular flex circuit 18 .
- die connectors 32 pass through windows 46 to reach first conductive layer 40 .
- module contacts 30 pass through windows 48 in second outer surface 38 to reach second conductive layer 42 .
- first conductive layer 40 is employed as a ground plane, while second conductive layer 42 provides the functions of being a signal conduction layer and a voltage conduction layer.
- second conductive layer 42 is employed to implement signal connections between integrated lower stack element 12 and upper IC element 14
- first conductive layer 40 is employed to implement ground connections between integrated lower stack element 12 and upper IC element 14 .
- first and second conductive layers may be reversed. This may be implemented by flex layer design or by attendant use of interconnections.
- thermal management is typically related to conductive layer materials and mass as well as the proximity between the die and the conductive layer.
- first and second conductive layers 40 and 42 may be implemented with vias such as the via indicated in FIG. 4 by reference 50 .
- vias such as the via indicated in FIG. 4 by reference 50 .
- appropriate connections may be implemented by any of several well-known techniques such as plated holes or solid lines or wires.
- the connections need not literally be implemented with vias.
- traces are delineated in conductive layers to convey, where needed, signals between selected module contacts 30 and particular die connectors 32 in the case of flip-chip style die 16 or between module contacts 30 and flex connectors 26 in the case where wire-bond connections 20 are implemented or between upper and lower flex contacts as will be described herein.
- traces can be implemented in a variety of configurations and manners and where die connectors are positioned coincident with module contact placement, trace use is minimized.
- a via 50 may be used to directly connect a selected die connector 32 to a selected module contact 30 without intermediate lateral conveyance between the two through a trace.
- a via 50 may be used to directly connect a selected die connector 32 to a selected module contact 30 without intermediate lateral conveyance between the two through a trace.
- a single conductive layer flex circuitry is employed in an embodiment, there will be no need for a via if a die connector 32 is positioned coincident with a module contact 30 to implement connection through a lower flex contact 62 such as is depicted in FIG. 5 .
- FIG. 5 illustrates an exemplar construction of an integrated lower stack element 12 in accordance with an alternative preferred embodiment of the present invention that employs flex circuitry having a single conductive layer.
- die 16 is appended to flex circuits 18 A and 18 B with adhesive 28 .
- the depicted embodiment also exhibits optional inter-flex connective 51 that passes through the part of protective surround 22 that lies between flex circuit 18 A and flex circuit 18 B.
- the inter-flex connective may consist of one or more wires or other connective structures such as may be implemented in wire bond, lead frame or other form.
- die 16 is connected to flex circuits 18 A and 18 B through die pads 24 and die connectors 32 .
- Flex circuits 18 A and 18 B are depicted with first and second outer layers 36 and 38 , respectively.
- Support layer 54 provides structure for flex circuits 18 A and 18 B and conductive layer 52 provides conductivity between die connectors 32 and module contacts 30 .
- Conductive layer 52 also provides conductivity between integrated lower stack element 12 and added elements such as another integrated lower stack element 12 or upper IC element 14 that may be aggregated to create module 10 .
- conductive layer 52 is disposed closer to module contacts 30 than is support layer 54 . This relative placement is preferred but not required.
- support layer 54 provides a support function similar to that provided by intermediate layer 44 in multi-layer flex circuitry embodiments such as those earlier described herein.
- Demarcation gap 56 depicted in FIG. 5 provides selective isolation of lower flex contact 62 of conductive layer 52 from areas of conductive layer 52 that may provide other functions or other interconnections between different ones of die connectors 32 and module contacts 30 or other interconnections to other elements of module 10 .
- flex circuits 18 A and 18 B are shown as having one conductive layer (i.e., layer 52 ). Therefore, in the depicted alternative embodiment, that one conductive layer 52 is intended to provide interconnectivity functions for module 10 . Consequently, particular interconnection features should be isolated from each other to allow rational connections to be implemented in module 10 where conductive layer structures are used.
- demarcation gap 56 is merely exemplary and assorted gaps and traces may be used in conductive layer 52 just as they may (but need not necessarily) be used in conductive layers in multi-conductive layer flex embodiments to provide rational interconnectivity features for module 10 .
- the present invention may be implemented with a flex circuitry that exhibits a dedicated connective network of individual traces and/or interconnections.
- a signal may be conveyed from die 16 through die pad 24 though die connector 32 through lower flex contact 62 at conductive layer 52 to module contact 30 .
- Such connection paths may convey voltage, ground or data or instruction signal connections in and out of die 16 .
- lower flex contacts 62 provide connection between die 16 and module contacts 30 as well as participating in selected connections between die 16 and the circuit of upper IC element 14 .
- a set of flex contacts such as those identified in later FIG. 7 as upper flex contacts with respect to a second conductive layer 42 shown in FIG. 7 , may, in the single conductive layer embodiment of FIG. 5 , participate in the connection between the circuit of upper IC element 14 and the flex circuitry employed in the particular embodiment.
- FIG. 6 depicts an alternative preferred embodiment of the present invention.
- die 16 is disposed above first outer surface 36 while die connective sites which, in this instance, are die pads 24 are connected to lower flex contacts 62 at the level of conductive layer 52 with wire bond connections 20 through windows 46 .
- Body 23 is formed about the depicted die-flex combination and, in the preferred embodiment, is formed employing protective surround 22 .
- Module contacts 30 are connected to the lower flex contacts 62 to express the appropriate set of signals emanating from die 16 .
- FIG. 6 depicts an alternative preferred embodiment of the present invention.
- die 16 is disposed above first outer surface 36 while die connective sites which, in this instance, are die pads 24 are connected to lower flex contacts 62 at the level of conductive layer 52 with wire bond connections 20 through windows 46 .
- Body 23 is formed about the depicted die-flex combination and, in the preferred embodiment, is formed employing protective surround 22 .
- Module contacts 30 are connected to the lower flex contacts 62 to express the appropriate set of signals emanating from
- a set of upper contacts are articulated in the conductive layer 52 to provide connective facility for an upper IC element 14 or another integrated lower stack element 12 .
- traces 64 may be employed to provide connections between those upper flex contacts and the lower flex contacts and appropriate module contacts 30 .
- module contacts 30 may be connected only to an upper element in a particular module 10 .
- FIG. 7 illustrates an exemplar second conductive layer 42 as may be implemented in flex circuits 18 A and 18 B of a preferred embodiment. Also shown is a depiction of die 16 and its underside 17 . Identified in FIG. 7 are upper flex contacts 60 and lower flex contacts 62 that are at the level of second conductive layer 42 of flex circuits 18 A and 18 B. Upper flex contacts 60 and lower flex contacts 62 are conductive material and, preferably, are solid metal. Only some of upper flex contacts 60 and lower flex contacts 62 are identified with reference numerals in FIG. 7 to preserve clarity of the view.
- Each of flex circuits 18 A and 18 B in the depicted preferred embodiment have both upper flex contacts 60 and lower flex contacts 62 .
- some embodiments may exhibit only lower or only upper flex contacts in flex circuits 18 A or 18 B.
- lower flex contacts 62 are employed with module contacts 30 to provide connective facility for integrated lower stack element 12 in module 10 .
- module contacts 30 are connected to lower flex contacts 62 as shown in exemplar fashion in FIG. 4 and in FIG. 5 in which figure a trace 64 is shown in the connective path between via 50 and lower flex contact 62 .
- traces between selected upper and lower flex contacts provide a connective path between upper IC element 14 and integrated lower stack element 12 and/or directly to module contacts 30 .
- interconnection of respective contacts of upper IC element 14 and integrated lower stack element 12 will also preferably provide a thermal path between the two elements 12 and 14 to assist in moderation of thermal gradients through module 10 .
- intermediate layer 44 that, in a preferred embodiment, is a polyimide. Placement of such an intermediate layer between ground-conductive first conductive layer 40 and signal/voltage conductive second conductive layer 42 provides, in the combination, a distributed capacitance that assists in mitigation of ground bounce phenomena to improve high frequency performance of module 10 .
- FIG. 7 depicted are various types of upper flex contacts 60 , various types of lower flex contacts 62 , and traces 64 .
- Lower flex contacts 62 A are connected to corresponding selected upper flex contacts 60 A with signal traces 64 .
- signal traces 64 To enhance the clarity of the view, only exemplar individual flex contacts 62 A and 60 A and traces 64 are literally identified in FIG. 7 .
- signal traces 64 may be devised to exhibit path routes determined to provide substantially equal signal lengths between corresponding flex contacts 60 A and 62 A.
- path routes determined to provide substantially equal signal lengths between corresponding flex contacts 60 A and 62 A.
- VDD plane 66 may be in one or more delineated sections but, preferably is contiguous per flex circuit 18 . Further, other embodiments may lack VDD plane 66 .
- Lower flex contacts 62 B and upper flex contacts 60 B provide connection to VDD plane 66 .
- upper flex contacts 60 B and lower flex contacts 62 B selectively connect upper IC element 14 and integrated lower stack element 12 , respectively, to VDD plane 66 .
- Lower flex contacts 62 that are connected to first conductive layer 40 by vias 50 are identified as lower flex contacts 62 C. To enhance the clarity of the view, only exemplar individual lower flex contacts 62 C are literally identified in FIG. 7 .
- Upper flex contacts 60 that are connected to first conductive layer 40 by vias 50 are identified as upper flex contacts 60 C.
- module 10 will exhibit an array of module contacts 30 that has a greater number of contacts than the constituent elements of module 10 individually exhibit.
- some of the module contacts 30 may contact lower flex contacts 62 that do not make contact with one of the die contacts 24 of integrated lower stack element 12 but are connected to upper IC contacts 19 of upper IC element 14 . This allows module 10 to express a wider datapath than that expressed by constituent integrated lower stack element 12 or upper IC element 14 .
- a module contact 30 may also be in contact with a lower flex contact 62 to provide a location through which different levels of constituent elements of the module may be enabled when no unused contacts are available or convenient for that purpose.
- first conductive layer 40 becomes, on the part of flex 18 disposed above upper surface 23 of integrated lower stack element 12 , the lower-most conductive layer of flex 18 from the perspective of upper IC element 14 .
- those upper IC element contacts 19 of upper IC element 14 that provide ground (VSS) connections are connected to the first conductive layer 40 .
- First conductive layer 40 lies beneath, however, second conductive layer 42 in that part of flex 18 that is wrapped above lower stack element 12 .
- those upper flex contacts 60 that are in contact with ground-conveying upper IC element contacts 25 of upper IC element 14 have vias that route through intermediate layer 44 to reach first conductive layer 40 .
- These vias may preferably be “on-pad” or coincident with the flex contact 60 to which they are connected.
- module 10 expresses a datapath that is wider than that of the constituent circuits of either integrated lower stack element 12 or upper IC element 14 or where differential enablement of the respective elements of module 10 is desired as those skilled in the field will understand.
Abstract
An IC die and a flexible circuit structure are integrated into a lower stack element that can be stacked with either further integrated lower stack element iterations or with pre-packaged ICs in any of a variety of package types. A die is positioned above the surface of portions of a pair of flex circuits. Connection is made between the die and the flex circuitry. A protective layer is formed to protect the flex-connected die and its connection to the flex. Connective elements are placed along the flex circuitry to create an array of module contacts along the second side of the flex circuitry. The flex circuitry is positioned above the body-protected die to create an integrated lower stack element. The integrated lower stack element may be stacked either with iterations of the integrated lower stack element or with a pre-packaged IC to create a multi-element stacked circuit module.
Description
- This application is a continuation of U.S. application Ser. No. 10/435,192, filed May 9, 2003, which is a continuation-in-part of U.S. application Ser. No. 10/005,581, filed Oct. 26, 2001, now U.S. Pat. No. 6,576,992, both of which are hereby incorporated by reference for all purposes.
- The present invention relates to aggregating integrated circuits and, in particular, to stacking integrated circuits.
- A variety of techniques are used to stack integrated circuits. Some methods require special packages, while other techniques stack conventional packages and still others stack multiple die within a single package. In some stacks, the leads of the packaged integrated circuits are used to create a stack, while in other systems, added structures such as rails provide all or part of the interconnection between packages. In still other techniques, flexible conductors with certain characteristics are used to selectively interconnect packaged integrated circuits. In yet other methods, one IC is connected to another within a single plastic body from which leads or contacts emerge.
- The predominant package configuration employed during the past decade has encapsulated an integrated circuit (IC) in a plastic surround typically having a rectangular configuration. The enveloped integrated circuit is connected to the application environment through leads emergent from the edge periphery of the plastic encapsulation. Such “leaded packages” have been the constituent elements most commonly employed by techniques for stacking packaged integrated circuits.
- Leaded packages play an important role in electronics, but efforts to miniaturize electronic components and assemblies have driven development of technologies that preserve circuit board surface area. Because leaded packages have leads emergent from peripheral sides of the package, leaded packages occupy more than a minimal amount of circuit board surface area. Consequently, alternatives to leaded packages have recently gained market share.
- One family of alternative packages is identified generally by the term “chip scale packaging” or CSP. CSP refers generally to packages that provide connection to an integrated circuit through a set of contacts (often embodied as “bumps” or “balls”) arrayed across a major surface of the package. Instead of leads emergent from a peripheral side of the package, contacts are placed on a major surface and typically emerge from the planar bottom surface of the package.
- The goal of CSP is to occupy as little area as possible and, preferably, approximately the area of the encapsulated IC. Therefore, CSP leads or contacts do not typically extend beyond the outline perimeter of the package. The absence of “leads” on package sides renders most stacking techniques devised for leaded packages inapplicable for CSP stacking.
- CSP has enabled reductions in size and weight parameters for many applications. For example, micro ball grid array for flash and SRAM and wirebond on tape or rigid laminate CSPs for SRAM or EEPROM have been employed in a variety of applications. CSP is a broad category including a variety of packages from near chip scale to die-sized packages such as the die sized ball grid array (DSBGA) recently described in proposed JEDEC standard 95-1 for DSBGA. To meet the continuing demands for cost and form factor reduction with increasing memory capacities, CSP technologies that aggregate integrated circuits in CSP technology have recently been developed. For example, Sharp, Hitachi, Mitsubishi and Intel support what are called the S-CSP specifications for flash and SRAM applications. Those S-CSP specifications describe, however, stacking multiple die within a single chip scale package and do not describe stacking integrated circuits that are individually modularized in plastic, either as BGA's or other common CSP packages. Stacking integrated circuits within a single package requires specialized technology that includes reformulation of package internals and significant expense with possible supply chain vulnerabilities.
- There are several known techniques for stacking packages articulated in chip scale technology. For example, the assignee of the present invention has developed previous systems for aggregating micro-BGA packages in space saving topologies. The assignee of the present invention has systems for stacking BGA packages on a DIMM in a RAMBUS environment.
- In U.S. Pat. No. 6,205,654 B1 owned by the assignee of the present invention, a system for stacking ball grid array packages that employs lead carriers to extend connectable points out from the packages is described. Other known techniques add structures to a stack of BGA-packaged ICs. Still others aggregate CSPs on a DIMM with angular placement of the packages. Such techniques provide alternatives, but require topologies of added cost and complexity.
- U.S. Pat. No. 6,262,895 B1 to Forthun (the “Forthun patent”) purports to disclose a technique for stacking chip scale packaged ICs. The Forthun patent discloses a “package” that exhibits a flex circuit wrapped partially about a CSP. The flex circuit is said to have pad arrays on upper and lower surfaces of the flex.
- The flex circuit of the Forthun “package” has a pad array on its upper surface and a pad array centrally located upon its lower surface. On the lower surface of the flex there are third and fourth arrays on opposite sides from the central lower surface pad array. To create the package of Forthun, a CSP contacts the pad array located on the upper surface of the flex circuit. As described in the Forthun patent, the contacts on the lower surface of the CSP are pushed through “slits” in the upper surface pads and advanced through the flex to protrude from the pads of the lower surface array and, therefore, the bottom surface of the package. Thus, the contacts of the CSP serve as the contacts for the package. The sides of the flex are partially wrapped about the CSP to adjacently place the third and fourth pad arrays above the upper major surface of the CSP to create from the combination of the third and fourth pad arrays, a fifth pad array for connection to another such package. Thus, as described in the Forthun disclosure, a stacked module of CSPs created with the described packages will exhibit a flex circuit wrapped about each CSP in the module.
- The previous known methods for stacking CSPs apparently have various deficiencies including complex structural arrangements and thermal or high frequency performance issues. To increase dissipation of heat generated by constituent CSPs, the thermal gradient between the lower CSP and upper CSP in a CSP stack or module should be minimized. Prior art solutions to CSP stacking do not, however, address thermal gradient minimization in disclosed constructions.
- In other applications, module height concerns impact the utility of known solutions in integrated circuit aggregation. In some stacking solutions, the bad die problem is significant. Indigenous as well as processing-acquired defects can lead to unacceptably high failure rates for stacks created by aggregating IC elements before testing the constituent members of the assembly. For example, where stacking techniques employ one or more unpackaged die, there is typically not an opportunity for adequate preassembly test before the constituent ICs of the assembly are aggregated. Then, testing typically reveals bad stacks, it does not prevent their assembly and consequent waste of resources.
- What is needed, therefore, is a technique and system for stacking integrated circuits using a technology that provides a thermally efficient, reliable structure that performs well at higher frequencies, but does not add excessive height to the stack yet allows pre-stacking test of constituent stack elements with production at reasonable cost with readily understood and managed materials and methods.
- The present invention integrates an IC die and a flexible circuit structure into an integrated lower stack element that can be stacked with either further integrated lower stack element iterations or with pre-packaged ICs in any of a variety of package types. The present invention can be used to advantage where size minimization, thermal efficiency and or test before stacking are significant concerns. The present invention may be employed to stack similar or dissimilar integrated circuits and may be used to create modularized systems.
- In the present invention, an IC die is integrated with flex circuitry to create an integrated lower stack element. In a preferred embodiment, a die is positioned above the surface of portions of a pair of flex circuits. Connection is made between the die and the flex circuitry. A protective layer such as a molded plastic, for example, is formed to create a body that protects the flex-connected die and its connection to the flex. Connective elements are placed along the flex circuits to create an array of module contacts along the second side of the flex circuitry. Portions of the pair of flex circuits are positioned above the body to create an integrated lower stack element. The integrated lower stack element may be stacked either with further iterations of the integrated lower stack element or with pre-packaged ICS to create a multi-element stacked circuit module. The present invention may be employed to advantage in numerous configurations and combinations in modules provided for high-density memories or high capacity computing.
-
FIG. 1 is an elevation view ofmodule 10 devised in accordance with a preferred embodiment of the present invention. -
FIG. 2 depicts an exemplar connection of an integrated circuit die to one of two flex circuits in a preferred embodiment of the present invention. -
FIG. 3 depicts an elevation view of an integrated lower stack element in accordance with a preferred embodiment of the present invention. -
FIG. 4 depicts an exemplar integration of a die in a flip-chip configuration with flex circuitry in accordance with a preferred embodiment of the present invention. -
FIG. 5 depicts an exemplar construction details of an integrated lower stack element in accordance with a preferred embodiment of the present invention. -
FIG. 6 depicts an exemplar construction details of an integrated lower stack element in accordance with another preferred embodiment of the present invention. -
FIG. 7 depicts an exemplar conductive layer in a preferred flex circuitry employed in a preferred embodiment of the present invention. -
FIG. 1 is an elevation view ofmodule 10 devised in accordance with a preferred embodiment of the present invention.Module 10 is comprised of integratedlower stack element 12 andupper IC element 14. -
Upper IC element 14 that is depicted inFIG. 1 may be any of a variety of types and configurations of CSP such as, for example, those that are die-sized, as well those that are near chip-scale as well as the variety of ball grid array packages known in the art. Typical CSPs, such as, for example, ball-grid-array (“BGA”), micro-ball-grid array (“μBGA”), and fine-pitch ball grid array (“FBGA”) packages have an array of connective contacts embodied, for example, as leads, bumps, solder balls, or balls that extend from a lower surface of a plastic casing in any of several patterns and pitches. An external portion of the connective contacts is often finished with a ball of solder. Collectively, these will be known herein as chip scale packaged integrated circuits (CSPs) and preferred embodiments will be described in terms of CSPs, but the particular configurations used in the explanatory figures are not, however, to be construed as limiting. For example, in the elevation view ofFIG. 1 ,upper IC element 14 is depicted as a CSP of a particular profile known to those in the art, but it should be understood that the figures are exemplary only.Upper IC element 14 need not be limited to traditional CSP packaging and as those of skill recognize the opportunity, the present invention is adaptable to future package configurations. The present invention is advantageously employed with memory circuits but may be employed to advantage with logic and computing circuits even where the constituent elements ofmodule 10 are dissimilar.Upper IC element 14 is shown withupper IC contacts 19. - Integrated
lower stack element 12 is shown withdie 16 andconnections 20 that connect die 16 to flexcircuits 18.Protective surround 22 is disposed to protectconnections 20 and die 16. In a preferred embodiment,protective surround 22 is a plastic surround. As aprotective surround 22 is formed aboutdie 16, abody 23 is formed havinglateral sides 21 and anupper surface 25.Protective body 23 will, in a preferred embodiment, surround portions of die 16 that would otherwise be exposed to potential environmental damage. -
FIG. 2 depicts an exemplar connection of an integrated circuit die 16 to one of twoflex circuits 18 in a preferred embodiment of the present invention to create a die-flex combination. As the present description continues, those of skill will recognize that a die-flex combination in accordance with the present invention may be devised in a variety of particular manners including using one or two flex circuits to provide connection to die 16, as well as using flex circuitry having one or more conductive layers. Preferably, the flex circuitry will articulate connective structures such as flex contacts and traces that will later be described. - As shown in
FIG. 2 , diepads 24 on die 16 are connected to flexattachments 26 offlex 18 byconnections 20 which, in the illustrated exemplar, are wire bonding connections. Diepads 24 are just one type of die connective site that may be employed in the present invention. Other die connective sites such as flip-chip, tab and connective rings, balls, or pads may be employed. Die connective sites may also be construed to include combinations of such structures to provide a connective site for the die. Wire bonding is well known in the art and those of skill will appreciate that many other methods may be used to provideconnections 20 betweendie 16 and the flex circuitry employed for the invention. For example, tab or flip-chip or other attachment techniques known in the art can be profitably used to implementconnections 20. Those of skill will also appreciate that diepads 24 ofdie 16 can be arranged in a variety of configurations across the IC. As is known in the art, through diepads 24, die 16 expresses data and instructions as well as ground and voltage connections. -
Flex 18 may be configured to interconnect to die 16 with other connective configurations. For example, as a variant on the flip-chip connectivity scheme,flex attachments 26 may be placed on the side offlex circuits 18 opposite that shown inFIG. 2 to place theflex attachments 26 immediately adjacent to the surface ofdie 16 to provide direct connection betweendie 16 andflex circuitry 18. It should also be understood that in the preferred embodiment shown inFIG. 1 , twoflex circuits 18 are employed but implementations of the invention can be devised using oneflex circuit 18. -
FIG. 3 depicts an elevation view of an integratedlower stack element 12 before its assembly into amodule 10.Die 16 is placed adjacent to flexcircuits 18 and fixed in place withadhesive 28. A variety of adhesive methods are known in the art and, in a preferred embodiment, an adhesive is used that has thermally conductive properties. - With reference to
FIG. 4 , in a preferred embodiment, portions offlex circuits module 10.Layer 28 may also be a thermally conductive medium or body to encourage heat flow. - As shown in this preferred embodiment,
module contacts 30 are fixed alongflex circuits preferred module contacts 30 are familiar to those in the art and may be comprised of eutectic, lead-free, solid copper, or other conductive materials. Other contact implementing structures may be used to createmodule contacts 30 as long as the conductive layer or layers of the flex circuitry can be connected tomodule contacts 30 to allow conveyance of the signals conducted inflex circuits 18 to be transmitted to an environment external to integratedlower stack element 12. Balls are well understood, but other techniques and structures such as connective rings, built-up pads, or even leads may be placed alongflex circuits 18 to createmodule contacts 30 to convey signals frommodule 10 to an external environment. Any of the standard JEDEC patterns may be implemented withmodule contacts 30 as well as custom arrays of module contacts for specialized applications. -
FIG. 4 depicts the integration ofdie 16 devised in a flip-chip configuration with twoflex circuits FIG. 4 is not drawn to scale. Die 16 exhibits diepads 24 along a lower surface of the die. Attached to diepads 24 aredie connectors 32 which, in the depicted embodiment, are flip-chip balls or connectors. As shown,flex circuits module contacts 30. - Any flexible or conformable substrate with a conductive pattern may be used as a flex circuit in the invention. The preferred flex circuitry will employ more than one conductive layer, but the invention may be implemented with flex circuitry that has only a single conductive layer.
- Even though single conductive layer flex circuitry may readily be used in the invention,
flex circuit 18 is preferably a multi-layer flexible circuit structure that has at least two conductive layers. This is particularly appropriate where frequencies to be encountered are higher. Preferably, the conductive layers are metal such as copper alloy 110 although any conductive material may be employed in this role. The use of plural conductive layers provides advantages such as the creation of a distributed capacitance acrossmodule 10 intended to reduce noise or bounce effects that can, particularly at higher frequencies, degrade signal integrity, as those of skill in the art will recognize. - The entire flex circuit may be flexible or, as those of skill in the art will recognize, a PCB structure made flexible in certain areas to allow conformability around
body 23 and rigid in other areas for planarity along surfaces may be employed as an alternative flex circuitry in the present invention. For example, structures known as rigid-flex may be employed. -
Flex circuits FIG. 4 are comprised of multiple layers. Depictedflex circuits outer surface 36 and a secondouter surface 38. The depictedpreferred flex circuits outer surfaces conductive layer 40 and secondconductive layer 42 are interior to first and secondouter surfaces conductive layer 40 and secondconductive layer 42. There may be more than one intermediate layer, but an intermediate layer of polyimide is preferred. Preferably, the intermediate layer provides mechanical support for the flex circuitry. - It should be understood that in some embodiments of the invention, there will be fewer layers employed in
flex circuit 18. For example, aflex circuit 18 may be devised for use in the present invention that lacks firstouter surface 36 and/or secondouter surface 38. In such a case, firstconductive layer 40 will be on the surface of theparticular flex circuit 18. Where there is a first outer surface, to make contact with firstconductive layer 40 as shown inFIG. 4 , dieconnectors 32 pass throughwindows 46 to reach firstconductive layer 40. Similarly, where there is a secondouter surface 38,module contacts 30 pass throughwindows 48 in secondouter surface 38 to reach secondconductive layer 42. - In a preferred embodiment, first
conductive layer 40 is employed as a ground plane, while secondconductive layer 42 provides the functions of being a signal conduction layer and a voltage conduction layer. Thus, secondconductive layer 42 is employed to implement signal connections between integratedlower stack element 12 andupper IC element 14, while firstconductive layer 40 is employed to implement ground connections between integratedlower stack element 12 andupper IC element 14. Those of skill will note that roles of the first and second conductive layers may be reversed. This may be implemented by flex layer design or by attendant use of interconnections. As is understood, thermal management is typically related to conductive layer materials and mass as well as the proximity between the die and the conductive layer. - Selective connections between first and second
conductive layers FIG. 4 byreference 50. There are, however, many other alternative methods to provide any needed connections between the conductive layers. For example, appropriate connections may be implemented by any of several well-known techniques such as plated holes or solid lines or wires. Thus, the connections need not literally be implemented with vias. - As will be illustrated in later figures, traces are delineated in conductive layers to convey, where needed, signals between selected
module contacts 30 andparticular die connectors 32 in the case of flip-chip style die 16 or betweenmodule contacts 30 andflex connectors 26 in the case where wire-bond connections 20 are implemented or between upper and lower flex contacts as will be described herein. Those of skill will recognize that traces can be implemented in a variety of configurations and manners and where die connectors are positioned coincident with module contact placement, trace use is minimized. For example, in some cases, if the die connectors 32 (illustrated as flip-chip connectors) are placed appropriately on die 16, a via 50 may be used to directly connect a selecteddie connector 32 to a selectedmodule contact 30 without intermediate lateral conveyance between the two through a trace. Where a single conductive layer flex circuitry is employed in an embodiment, there will be no need for a via if adie connector 32 is positioned coincident with amodule contact 30 to implement connection through alower flex contact 62 such as is depicted inFIG. 5 . -
FIG. 5 illustrates an exemplar construction of an integratedlower stack element 12 in accordance with an alternative preferred embodiment of the present invention that employs flex circuitry having a single conductive layer. As shown, die 16 is appended to flexcircuits protective surround 22 that lies betweenflex circuit 18A andflex circuit 18B. The inter-flex connective may consist of one or more wires or other connective structures such as may be implemented in wire bond, lead frame or other form. - As those of skill will recognize, die 16 is connected to flex
circuits die pads 24 and dieconnectors 32.Flex circuits outer layers Support layer 54 provides structure forflex circuits conductive layer 52 provides conductivity betweendie connectors 32 andmodule contacts 30.Conductive layer 52 also provides conductivity between integratedlower stack element 12 and added elements such as another integratedlower stack element 12 orupper IC element 14 that may be aggregated to createmodule 10. - Those of skill will recognize that in the depicted embodiment,
conductive layer 52 is disposed closer tomodule contacts 30 than issupport layer 54. This relative placement is preferred but not required. Such persons will also recognize thatsupport layer 54 provides a support function similar to that provided by intermediate layer 44 in multi-layer flex circuitry embodiments such as those earlier described herein. -
Demarcation gap 56 depicted inFIG. 5 provides selective isolation oflower flex contact 62 ofconductive layer 52 from areas ofconductive layer 52 that may provide other functions or other interconnections between different ones ofdie connectors 32 andmodule contacts 30 or other interconnections to other elements ofmodule 10. For example, in the embodiment ofFIG. 5 ,flex circuits conductive layer 52 is intended to provide interconnectivity functions formodule 10. Consequently, particular interconnection features should be isolated from each other to allow rational connections to be implemented inmodule 10 where conductive layer structures are used. This is depicted bydemarcation gap 56, but those of skill will understand thatdemarcation gap 56 is merely exemplary and assorted gaps and traces may be used inconductive layer 52 just as they may (but need not necessarily) be used in conductive layers in multi-conductive layer flex embodiments to provide rational interconnectivity features formodule 10. However, as those of skill will recognize, the present invention may be implemented with a flex circuitry that exhibits a dedicated connective network of individual traces and/or interconnections. - With continuing reference to
FIG. 5 , a signal may be conveyed from die 16 throughdie pad 24 thoughdie connector 32 throughlower flex contact 62 atconductive layer 52 tomodule contact 30. Such connection paths may convey voltage, ground or data or instruction signal connections in and out ofdie 16. - In the depicted embodiment of
FIG. 5 ,lower flex contacts 62 provide connection betweendie 16 andmodule contacts 30 as well as participating in selected connections betweendie 16 and the circuit ofupper IC element 14. However, in addition, a set of flex contacts such as those identified in laterFIG. 7 as upper flex contacts with respect to a secondconductive layer 42 shown inFIG. 7 , may, in the single conductive layer embodiment ofFIG. 5 , participate in the connection between the circuit ofupper IC element 14 and the flex circuitry employed in the particular embodiment. -
FIG. 6 depicts an alternative preferred embodiment of the present invention. In the embodiment as depicted inFIG. 6 , die 16 is disposed above firstouter surface 36 while die connective sites which, in this instance, aredie pads 24 are connected tolower flex contacts 62 at the level ofconductive layer 52 withwire bond connections 20 throughwindows 46.Body 23 is formed about the depicted die-flex combination and, in the preferred embodiment, is formed employingprotective surround 22.Module contacts 30 are connected to thelower flex contacts 62 to express the appropriate set of signals emanating fromdie 16. As those of skill will understand as to the preferred embodiment ofFIG. 6 , when integratedlower stack element 12 is incorporated into amodule 10, a set of upper contacts are articulated in theconductive layer 52 to provide connective facility for anupper IC element 14 or another integratedlower stack element 12. Further, traces 64 may be employed to provide connections between those upper flex contacts and the lower flex contacts andappropriate module contacts 30. Those of skill will recognize that in some instances, there may bemodule contacts 30 that are connected only to an upper element in aparticular module 10. -
FIG. 7 illustrates an exemplar secondconductive layer 42 as may be implemented inflex circuits die 16 and its underside 17. Identified inFIG. 7 areupper flex contacts 60 andlower flex contacts 62 that are at the level of secondconductive layer 42 offlex circuits Upper flex contacts 60 andlower flex contacts 62 are conductive material and, preferably, are solid metal. Only some ofupper flex contacts 60 andlower flex contacts 62 are identified with reference numerals inFIG. 7 to preserve clarity of the view. - Each of
flex circuits upper flex contacts 60 andlower flex contacts 62. Depending upon the contact pattern ofdie 16 andupper IC element 14, some embodiments may exhibit only lower or only upper flex contacts inflex circuits - In the preferred embodiment depicted in
FIG. 7 ,lower flex contacts 62 are employed withmodule contacts 30 to provide connective facility for integratedlower stack element 12 inmodule 10. Thus, in a preferred embodiment,module contacts 30 are connected tolower flex contacts 62 as shown in exemplar fashion inFIG. 4 and inFIG. 5 in which figure atrace 64 is shown in the connective path between via 50 andlower flex contact 62. However, as those of skill will recognize, traces between selected upper and lower flex contacts provide a connective path betweenupper IC element 14 and integratedlower stack element 12 and/or directly tomodule contacts 30. - As those of skill will recognize, interconnection of respective contacts of
upper IC element 14 and integratedlower stack element 12 will also preferably provide a thermal path between the twoelements module 10. Those of skill will notice that between first and secondconductive layers conductive layer 40 and signal/voltage conductive secondconductive layer 42 provides, in the combination, a distributed capacitance that assists in mitigation of ground bounce phenomena to improve high frequency performance ofmodule 10. - With continuing reference to
FIG. 7 , depicted are various types ofupper flex contacts 60, various types oflower flex contacts 62, and traces 64.Lower flex contacts 62A are connected to corresponding selectedupper flex contacts 60A with signal traces 64. To enhance the clarity of the view, only exemplarindividual flex contacts FIG. 7 . - To improve high frequency performance, signal traces 64 may be devised to exhibit path routes determined to provide substantially equal signal lengths between
corresponding flex contacts - As shown in the depicted preferred embodiment of
FIG. 7 , traces 64 are separated from the larger surface area of secondconductive layer 42 that is identified asVDD plane 66.VDD plane 66 may be in one or more delineated sections but, preferably is contiguous perflex circuit 18. Further, other embodiments may lackVDD plane 66. -
Lower flex contacts 62B andupper flex contacts 60B provide connection toVDD plane 66. In a preferred embodiment,upper flex contacts 60B andlower flex contacts 62B selectively connectupper IC element 14 and integratedlower stack element 12, respectively, toVDD plane 66. -
Lower flex contacts 62 that are connected to firstconductive layer 40 byvias 50 are identified aslower flex contacts 62C. To enhance the clarity of the view, only exemplar individuallower flex contacts 62C are literally identified inFIG. 7 .Upper flex contacts 60 that are connected to firstconductive layer 40 byvias 50 are identified asupper flex contacts 60C. - In some embodiments, as shown in incorporated U.S. patent application Ser. No. 10/005,581,
module 10 will exhibit an array ofmodule contacts 30 that has a greater number of contacts than the constituent elements ofmodule 10 individually exhibit. In such embodiments, some of themodule contacts 30 may contactlower flex contacts 62 that do not make contact with one of thedie contacts 24 of integratedlower stack element 12 but are connected toupper IC contacts 19 ofupper IC element 14. This allowsmodule 10 to express a wider datapath than that expressed by constituent integratedlower stack element 12 orupper IC element 14. - A
module contact 30 may also be in contact with alower flex contact 62 to provide a location through which different levels of constituent elements of the module may be enabled when no unused contacts are available or convenient for that purpose. - Those of skill will recognize that as
flex circuitry 18 is partially wrapped aboutlateral side 21 of integratedlower stack element 12, firstconductive layer 40 becomes, on the part offlex 18 disposed aboveupper surface 23 of integratedlower stack element 12, the lower-most conductive layer offlex 18 from the perspective ofupper IC element 14. In the depicted embodiment, those upperIC element contacts 19 ofupper IC element 14 that provide ground (VSS) connections are connected to the firstconductive layer 40. Firstconductive layer 40 lies beneath, however, secondconductive layer 42 in that part offlex 18 that is wrapped abovelower stack element 12. Consequently, in the depicted preferred embodiment, thoseupper flex contacts 60 that are in contact with ground-conveying upperIC element contacts 25 ofupper IC element 14 have vias that route through intermediate layer 44 to reach firstconductive layer 40. These vias may preferably be “on-pad” or coincident with theflex contact 60 to which they are connected. - As those of skill will recognize, there may be embodiments of the present invention that may profitably employ off-pad vias such as are described in previously cited U.S. application Ser. No. 10/005,581, filed Oct. 26, 2001, (the “'581 application) pending, which is incorporated by reference herein.
- Those of skill who refer to the '581 application will note that the figures in that application will be instructive in teaching details concerning a flex circuitry construction for preferred embodiments of the present invention. Further, as those of skill will recognize, the details on location and relationships between upper and lower flex contacts as described in the '581 application are useful to preferred embodiments of the present invention as modified to fit the particulars of the considered embodiment. Further, alternative embodiments depicted in the '581 application are instructive in understanding alternatives available for embodiments of the present invention. For example, the '581 application provides teachings that are descriptive of features that may be employed to advantage in preferred embodiments in accordance with the present invention where
module 10 expresses a datapath that is wider than that of the constituent circuits of either integratedlower stack element 12 orupper IC element 14 or where differential enablement of the respective elements ofmodule 10 is desired as those skilled in the field will understand. - Although the present invention has been described in detail, it will be apparent to those skilled in the art that the invention may be embodied in a variety of specific forms and that various changes, substitutions and alterations can be made without departing from the spirit and scope of the invention. The described embodiments are only illustrative and not restrictive and the scope of the invention is, therefore, indicated by the following claims.
Claims (40)
1. A circuit module comprising:
an upper IC element;
an integrated lower stack element comprising:
an integrated circuit die;
first and second flex circuits, disposed adjacent to and connected with the integrated circuit die to create a die-flex combination; and
a protective structure molded to the die-flex combination to create a body having an upper surface above which are placed portions of the first and second flex circuits; and
the upper IC element and the integrated lower stack element being in stacked conjunction with the upper IC element being disposed above the integrated lower stack element and the upper IC element and integrated lower stack element being connected through the first and second flex circuits.
2. The circuit module of claim 1 in which the first and second flex circuits each have first and second conductive layers.
3. The circuit module of claim 2 in which the connection of the upper IC element and integrated lower stack element through the first and second flex circuits is implemented through interconnections articulated at the first and second conductive layers of the first and second flex circuits.
4. The circuit module of claim 2 in which at least one of the first and second conductive layers of the first and second flex circuits have demarked upper and lower flex contacts.
5. An integrated lower stack element comprising:
an integrated circuit die;
first and second flex circuits, disposed adjacent to and connected with the integrated circuit die to create a die-flex combination; and
a protective structure molded to the die-flex combination to create a body having an upper surface above which are placed portions of the first and second flex circuits.
6. The integrated lower stack element of claim 5 in which the first and second flex circuits are connected with the integrated circuit die through wire bonds.
7. The integrated lower stack element of claim 5 in which the first and second flex circuits are connected with the integrated circuit die through flip-chip connections.
8. The integrated lower stack element of claim 5 further comprising a set of module contacts disposed along the first and second flex circuits.
9. The integrated lower stack element of claim 5 in which the first and second flex circuits each have first and second conductive layers.
10. A circuit module comprising:
(a) an integrated lower stack element comprising;
an integrated circuit die having a plurality of die connective sites;
a flexible circuit having first and second conductive layers, the flexible circuit being disposed in part beneath and affixed to and connected with the integrated circuit die to form a die-flex combination; and
a protective structure set about the die-flex combination to cover at least a portion of the die and at least a portion of the flexible circuit and create a body having an upper surface above which are placed portions of the flexible circuit; and
(b) an upper IC element having a plurality of upper IC contacts, the upper IC element being disposed in stacked conjunction with the integrated lower stack element, the upper IC element and integrated lower stack element being connected through the flexible circuit.
11. The circuit module of claim 10 in which a data signal connection between the upper IC element and the integrated lower stack element is implemented at the second conductive layer of the flex circuit.
12. The circuit module of claim 10 in which a data signal connection between the upper IC element and the integrated lower stack element is implemented at the first conductive layer of the flex circuit.
13. The circuit module of claim 10 in which:
a data set of the plurality of upper IC contacts expresses an n-bit datapath;
a data set of the plurality of die connective sites expresses an n-bit datapath; and
a set of module contacts expresses a 2n-bit datapath that combines the n-bit datapath of the data set of the plurality of upper IC contacts and the n-bit datapath of the data set of the plurality of die connective sites.
14. The circuit module of claim 10 in which the second conductive layer comprises at least one demarked voltage plane and a voltage set of upper flex contacts and a voltage set of lower flex contacts that connect voltage conductive die connective sites and voltage conductive upper IC contacts to one of the at least one voltage planes.
15. A flex circuit connecting an upper IC element and an integrated circuit die in a circuit module, the flex circuit comprising:
first and second outer layers; and
first and second conductive layers, between which there is an intermediate layer, the first and second conductive layers and the intermediate layer being interior to the first and second outer layers, the second conductive layer having demarked first and second flex contacts, the first flex contacts being accessible through first windows through the second outer layer and the second flex contacts being accessible through second windows through the first outer layer, the first conductive layer, and the intermediate layer, the first flex contacts in electrical connection with the upper IC element and the second flex contacts in electrical connection with the integrated circuit die;
wherein the flex circuit is disposed in part beneath and is combined with the integrated circuit die to form a die-flex combination and wherein a protective structure is set about the die-flex combination to cover at least a portion of the die and at least a portion of the flex circuit, the protective structure having an upper surface above which are placed portions of the flex circuit.
16. The flex circuit of claim 15 in which the second flex contacts are accessible through module windows through the second outer layer.
17. The flex circuit of claim 15 in which the first and second conductive layers are metal.
18. The flex circuit of claim 15 in which selected ones of the first flex contacts are connected to selected ones of the second flex contacts.
19. The flex circuit of claim 15 in which selected ones of the first flex contacts and selected ones of the second flex contacts are connected to the first conductive layer.
20. The flex circuit of claim 17 in which the metal of the first and second conductive layers is alloy 110.
21. The flex circuit of claim 18 in which the connected selected ones of the first and second flex contacts are connected with traces.
22. The flex circuit of claim 15 in which selected ones of the first flex contacts and selected ones of the second flex contacts are connected to the first conductive layer with vias.
23. A circuit module that employs the flex circuit of claim 15 to connect selected die contacts of an integrated circuit die to selected contacts of an upper IC element.
24. A circuit module comprising:
a first flex circuit devised in accordance with claim 15;
a second flex circuit devised in accordance with claim 15;
an integrated circuit die having a plurality of die connective sites, a set of the plurality of die connective sites of the integrated circuit die being in electrical communication with the first flex contacts of each of the first and second flex circuits;
an upper IC element having a plurality of upper IC contacts, a set of the plurality of upper IC contacts of the upper IC element being in electrical communication with the second flex contacts of each of the first and second flex circuits; and
a set of module contacts in electrical communication with the second flex contacts.
25. The circuit module of claim 24 in which the first and second flex circuits are connected through an inter-flex circuit connective.
26. A circuit module comprising:
a first flex circuit devised in accordance with claim 15;
a second flex circuit devised in accordance with claim 15;
an integrated circuit having a plurality of die connective sites, a set of the plurality of die connective sites, the die contacts of the integrated being in electrical communication with the second flex contacts of each of the first and second flex circuits;
an upper IC element having a plurality of upper IC contacts, a set of the plurality of upper IC contacts of the upper IC element being in electrical communication with the first flex contacts of each of the first and second flex circuits; and
a set of module contacts in electrical communication with the first flex contacts.
27. The circuit module of claims 24 or 26 in which for the first and second flex circuits, the first conductive layer conveys ground, and the second conductive layer conveys voltage in a voltage plane and the intermediate layer is insulative to create a distributed capacitor in the first and second flex circuits.
28. A circuit module comprising:
a first CSP having first and second lateral sides and upper and lower major surfaces and a set of CSP contacts along the lower major surface;
an integrated circuit die having a set of die connective sites connected to a pair of flex circuits;
each of which pair of flex circuits having a first conductive layer and a second conductive layer, both said conductive layers being interior to first and second outer layers, and demarcated at the second conductive layer of each flex circuit there being upper and lower flex contacts, the upper flex contacts being connected to the set of CSP contacts of the first CSP and the lower flex contacts being connected to the die connective sites of the integrated circuit die and a set of module contacts.
29. The circuit module of claim 28 in which:
a chip-enable module contact is connected to an enable lower flex contact that is connected to a chip select CSP contact of the first CSP.
30. The circuit module of claim 29 in which the connection between the enable lower flex contact and the chip select CSP contact of the first CSP is through an enable connection at the first conductive layer.
31. The circuit module of claim 28 in which a body having first and second lateral sides and an upper major surface is set about the integrated circuit die and a first one of the flex circuit pair is partially wrapped about the first lateral side of said body and a second one of the flex circuit pair is partially wrapped about the second lateral side of said body to dispose the upper flex contacts above the upper major surface of said body and beneath the lower major surface of the first CSP.
32. The circuit module of claim 31 in which the first CSP expresses an n-bit datapath and the integrated circuit die expresses an n-bit datapath, each of the flex circuits of the flex circuit pair having supplemental lower flex contacts which, in combination with the lower flex contacts, provide connection for the set of module contacts and a set of supplemental module contacts to express a 2n-bit module datapath that combines the n-bit datapath expressed by the first CSP and the n-bit datapath expressed by the integrated circuit die.
33. A circuit module comprising:
a first CSP having first and second major surfaces with a plurality of CSP contacts along the first major surface;
an integrated lower stack element in accordance with claim 5 , the first CSP being disposed above the integrated lower stack element;
each of the pair of flex circuits of the integrated lower stack element having an outer layer and an inner layer and first and second conductive layers between which conductive layers there is an intermediate layer, the second conductive layer having demarked a plurality of upper and lower flex contacts and a voltage plane, a first set of said plurality of upper and lower flex contacts being connected to the voltage plane, a second set of said plurality of upper and lower flex contacts being connected to the first conductive layer, and a third set of said plurality of upper and lower flex contacts being comprised of selected ones of upper flex contacts that are connected to corresponding selected ones of lower flex contacts, the plurality of CSP contacts of the first CSP being in contact with the upper flex contacts; and
a set of module contacts in contact with the lower flex contacts.
34. The circuit module of claim 33 in which the first CSP and the integrated circuit die of the integrated lower stack element are memory circuits.
35. The circuit module of claim 33 in which the second set of said plurality of upper and lower flex contacts is connected to the first conductive layer with vias that pass through the intermediate layer.
36. The circuit module of claim 35 in which the second set of said plurality of upper and lower flex contacts is comprised of upper flex contacts connected to the first conductive layer with on-pad vias.
37. The circuit module of claim 35 in which the second set of said plurality of upper and lower flex contacts is comprised of lower flex contacts connected to the first conductive layer with off-pad vias.
38. The circuit module of claim 1 mounted on a board.
39. The circuit module of claims 33 or 34 in which between the first CSP and the integrated lower stack element there is a thermally conductive layer.
40. A method for assembling a circuit module, the method comprising the steps of:
acquiring an integrated circuit die;
acquiring a flex circuit devised in accordance with claim 15;
disposing an adhesive on a selected area of the first outer surface of the flex circuit;
adhering the flex circuit to the integrated circuit die;
forming a connection between the flex circuit and the integrated circuit die;
protecting the integrated circuit die and the connection formed between the flex circuit and the integrated circuit die with a protective layer to form a body;
disposing a portion of the flex circuit above the body;
acquiring a CSP;
connecting the CSP to the flex circuit.
Priority Applications (1)
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US11/941,718 US20080067662A1 (en) | 2001-10-26 | 2007-11-16 | Modularized Die Stacking System and Method |
Applications Claiming Priority (3)
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US10/005,581 US6576992B1 (en) | 2001-10-26 | 2001-10-26 | Chip scale stacking system and method |
US10/435,192 US7485951B2 (en) | 2001-10-26 | 2003-05-09 | Modularized die stacking system and method |
US11/941,718 US20080067662A1 (en) | 2001-10-26 | 2007-11-16 | Modularized Die Stacking System and Method |
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US10/435,192 Continuation US7485951B2 (en) | 2001-10-26 | 2003-05-09 | Modularized die stacking system and method |
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US20080067662A1 true US20080067662A1 (en) | 2008-03-20 |
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US11/941,718 Abandoned US20080067662A1 (en) | 2001-10-26 | 2007-11-16 | Modularized Die Stacking System and Method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100025835A1 (en) * | 2008-08-01 | 2010-02-04 | Oh Jihoon | Integrated circuit package stacking system |
US20120326304A1 (en) * | 2011-06-24 | 2012-12-27 | Warren Robert W | Externally Wire Bondable Chip Scale Package in a System-in-Package Module |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001237280A (en) * | 2000-02-22 | 2001-08-31 | Nec Corp | Tape carrier type semiconductor device and flexible film connection board |
KR100699823B1 (en) * | 2003-08-05 | 2007-03-27 | 삼성전자주식회사 | Low cost type flexible film package module and method for fabricating thereof |
US8324725B2 (en) * | 2004-09-27 | 2012-12-04 | Formfactor, Inc. | Stacked die module |
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US20080203552A1 (en) * | 2005-02-15 | 2008-08-28 | Unisemicon Co., Ltd. | Stacked Package and Method of Fabricating the Same |
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JP5090362B2 (en) * | 2006-10-11 | 2012-12-05 | 株式会社図研 | Electric information processing apparatus in CAD system, electric information processing method and program in CAD system |
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JP5642473B2 (en) * | 2010-09-22 | 2014-12-17 | セイコーインスツル株式会社 | BGA semiconductor package and manufacturing method thereof |
KR101796116B1 (en) | 2010-10-20 | 2017-11-10 | 삼성전자 주식회사 | Semiconductor device, memory module and memory system having the same and operating method thereof |
US20230137998A1 (en) * | 2021-11-03 | 2023-05-04 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing electronic devices |
Citations (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3372310A (en) * | 1965-04-30 | 1968-03-05 | Radiation Inc | Universal modular packages for integrated circuits |
US3718842A (en) * | 1972-04-21 | 1973-02-27 | Texas Instruments Inc | Liquid crystal display mounting structure |
US4079511A (en) * | 1976-07-30 | 1978-03-21 | Amp Incorporated | Method for packaging hermetically sealed integrated circuit chips on lead frames |
US4429349A (en) * | 1980-09-30 | 1984-01-31 | Burroughs Corporation | Coil connector |
US4437235A (en) * | 1980-12-29 | 1984-03-20 | Honeywell Information Systems Inc. | Integrated circuit package |
US4567543A (en) * | 1983-02-15 | 1986-01-28 | Motorola, Inc. | Double-sided flexible electronic circuit module |
US4645944A (en) * | 1983-09-05 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | MOS register for selecting among various data inputs |
US4722691A (en) * | 1986-02-03 | 1988-02-02 | General Motors Corporation | Header assembly for a printed circuit board |
US4724611A (en) * | 1985-08-23 | 1988-02-16 | Nec Corporation | Method for producing semiconductor module |
US4727513A (en) * | 1983-09-02 | 1988-02-23 | Wang Laboratories, Inc. | Signal in-line memory module |
US4733461A (en) * | 1984-12-28 | 1988-03-29 | Micro Co., Ltd. | Method of stacking printed circuit boards |
US4891789A (en) * | 1988-03-03 | 1990-01-02 | Bull Hn Information Systems, Inc. | Surface mounted multilayer memory printed circuit board |
US4903169A (en) * | 1986-04-03 | 1990-02-20 | Matsushita Electric Industrial Co., Ltd. | Shielded high frequency apparatus having partitioned shield case, and method of manufacture thereof |
US4911643A (en) * | 1988-10-11 | 1990-03-27 | Beta Phase, Inc. | High density and high signal integrity connector |
US4982265A (en) * | 1987-06-24 | 1991-01-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
US4983533A (en) * | 1987-10-28 | 1991-01-08 | Irvine Sensors Corporation | High-density electronic modules - process and product |
US4985703A (en) * | 1988-02-03 | 1991-01-15 | Nec Corporation | Analog multiplexer |
US4992850A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded simm module |
US4992849A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded board multiple integrated circuit module |
US5081067A (en) * | 1989-02-10 | 1992-01-14 | Fujitsu Limited | Ceramic package type semiconductor device and method of assembling the same |
US5099393A (en) * | 1991-03-25 | 1992-03-24 | International Business Machines Corporation | Electronic package for high density applications |
US5191404A (en) * | 1989-12-20 | 1993-03-02 | Digital Equipment Corporation | High density memory array packaging |
US5198965A (en) * | 1991-12-18 | 1993-03-30 | International Business Machines Corporation | Free form packaging of specific functions within a computer system |
US5198888A (en) * | 1987-12-28 | 1993-03-30 | Hitachi, Ltd. | Semiconductor stacked device |
US5276418A (en) * | 1988-11-16 | 1994-01-04 | Motorola, Inc. | Flexible substrate electronic assembly |
US5279029A (en) * | 1990-08-01 | 1994-01-18 | Staktek Corporation | Ultra high density integrated circuit packages method |
US5281852A (en) * | 1991-12-10 | 1994-01-25 | Normington Peter J C | Semiconductor device including stacked die |
US5289062A (en) * | 1991-03-18 | 1994-02-22 | Quality Semiconductor, Inc. | Fast transmission gate switch |
US5289346A (en) * | 1991-02-26 | 1994-02-22 | Microelectronics And Computer Technology Corporation | Peripheral to area adapter with protective bumper for an integrated circuit chip |
US5384690A (en) * | 1993-07-27 | 1995-01-24 | International Business Machines Corporation | Flex laminate package for a parallel processor |
US5386341A (en) * | 1993-11-01 | 1995-01-31 | Motorola, Inc. | Flexible substrate folded in a U-shape with a rigidizer plate located in the notch of the U-shape |
US5394300A (en) * | 1992-09-04 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Thin multilayered IC memory card |
US5394010A (en) * | 1991-03-13 | 1995-02-28 | Kabushiki Kaisha Toshiba | Semiconductor assembly having laminated semiconductor devices |
US5394303A (en) * | 1992-09-11 | 1995-02-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5396573A (en) * | 1993-08-03 | 1995-03-07 | International Business Machines Corporation | Pluggable connectors for connecting large numbers of electrical and/or optical cables to a module through a seal |
US5397916A (en) * | 1991-12-10 | 1995-03-14 | Normington; Peter J. C. | Semiconductor device including stacked die |
US5484959A (en) * | 1992-12-11 | 1996-01-16 | Staktek Corporation | High density lead-on-package fabrication method and apparatus |
US5491612A (en) * | 1995-02-21 | 1996-02-13 | Fairchild Space And Defense Corporation | Three-dimensional modular assembly of integrated circuits |
US5493476A (en) * | 1994-03-07 | 1996-02-20 | Staktek Corporation | Bus communication system for stacked high density integrated circuit packages with bifurcated distal lead ends |
US5592364A (en) * | 1995-01-24 | 1997-01-07 | Staktek Corporation | High density integrated circuit module with complex electrical interconnect rails |
US5594275A (en) * | 1993-11-18 | 1997-01-14 | Samsung Electronics Co., Ltd. | J-leaded semiconductor package having a plurality of stacked ball grid array packages |
US5600178A (en) * | 1993-10-08 | 1997-02-04 | Texas Instruments Incorporated | Semiconductor package having interdigitated leads |
US5708297A (en) * | 1992-09-16 | 1998-01-13 | Clayton; James E. | Thin multichip module |
US5714802A (en) * | 1991-06-18 | 1998-02-03 | Micron Technology, Inc. | High-density electronic module |
US5717556A (en) * | 1995-04-26 | 1998-02-10 | Nec Corporation | Printed-wiring board having plural parallel-connected interconnections |
US5869353A (en) * | 1997-11-17 | 1999-02-09 | Dense-Pac Microsystems, Inc. | Modular panel stacking process |
US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
US6013948A (en) * | 1995-11-27 | 2000-01-11 | Micron Technology, Inc. | Stackable chip scale semiconductor package with mating contacts on opposed surfaces |
US6014316A (en) * | 1997-06-13 | 2000-01-11 | Irvine Sensors Corporation | IC stack utilizing BGA contacts |
US6021048A (en) * | 1998-02-17 | 2000-02-01 | Smith; Gary W. | High speed memory module |
US6025642A (en) * | 1995-08-17 | 2000-02-15 | Staktek Corporation | Ultra high density integrated circuit packages |
US6028365A (en) * | 1998-03-30 | 2000-02-22 | Micron Technology, Inc. | Integrated circuit package and method of fabrication |
US6028352A (en) * | 1997-06-13 | 2000-02-22 | Irvine Sensors Corporation | IC stack utilizing secondary leadframes |
US6172874B1 (en) * | 1998-04-06 | 2001-01-09 | Silicon Graphics, Inc. | System for stacking of integrated circuit packages |
US6178093B1 (en) * | 1996-06-28 | 2001-01-23 | International Business Machines Corporation | Information handling system with circuit assembly having holes filled with filler material |
US6180881B1 (en) * | 1998-05-05 | 2001-01-30 | Harlan Ruben Isaak | Chip stack and method of making same |
US6186106B1 (en) * | 1997-12-29 | 2001-02-13 | Visteon Global Technologies, Inc. | Apparatus for routing electrical signals in an engine |
US6187652B1 (en) * | 1998-09-14 | 2001-02-13 | Fujitsu Limited | Method of fabrication of multiple-layer high density substrate |
US20020001216A1 (en) * | 1996-02-26 | 2002-01-03 | Toshio Sugano | Semiconductor device and process for manufacturing the same |
US6336262B1 (en) * | 1996-10-31 | 2002-01-08 | International Business Machines Corporation | Process of forming a capacitor with multi-level interconnection technology |
US20020006032A1 (en) * | 2000-05-23 | 2002-01-17 | Chris Karabatsos | Low-profile registered DIMM |
US6343020B1 (en) * | 1998-12-28 | 2002-01-29 | Foxconn Precision Components Co., Ltd. | Memory module |
US6347394B1 (en) * | 1998-11-04 | 2002-02-12 | Micron Technology, Inc. | Buffering circuit embedded in an integrated circuit device module used for buffering clocks and other input signals |
US6349050B1 (en) * | 2000-10-10 | 2002-02-19 | Rambus, Inc. | Methods and systems for reducing heat flux in memory systems |
US6351029B1 (en) * | 1999-05-05 | 2002-02-26 | Harlan R. Isaak | Stackable flex circuit chip package and method of making same |
US20030002262A1 (en) * | 2001-07-02 | 2003-01-02 | Martin Benisek | Electronic printed circuit board having a plurality of identically designed, housing-encapsulated semiconductor memories |
US6504104B2 (en) * | 1997-12-10 | 2003-01-07 | Siemens Aktiengesellschaft | Flexible wiring for the transformation of a substrate with edge contacts into a ball grid array |
US6509639B1 (en) * | 2001-07-27 | 2003-01-21 | Charles W. C. Lin | Three-dimensional stacked semiconductor package |
US20030016710A1 (en) * | 2001-07-19 | 2003-01-23 | Satoshi Komoto | Semiconductor laser device including light receiving element for receiving monitoring laser beam |
US20030020153A1 (en) * | 2001-07-24 | 2003-01-30 | Ted Bruce | Chip stack with differing chip package types |
US6514793B2 (en) * | 1999-05-05 | 2003-02-04 | Dpac Technologies Corp. | Stackable flex circuit IC package and method of making same |
US20030026155A1 (en) * | 2001-08-01 | 2003-02-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory module and register buffer device for use in the same |
US6522018B1 (en) * | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
US6521530B2 (en) * | 1998-11-13 | 2003-02-18 | Fujitsu Limited | Composite interposer and method for producing a composite interposer |
US20030035328A1 (en) * | 2001-08-08 | 2003-02-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device shiftable to test mode in module as well as semiconductor memory module using the same |
US6526549B1 (en) * | 2000-09-14 | 2003-02-25 | Sun Microsystems, Inc. | Hierarchical parasitic capacitance extraction for ultra large scale integrated circuits |
US20040000708A1 (en) * | 2001-10-26 | 2004-01-01 | Staktek Group, L.P. | Memory expansion and chip scale stacking system and method |
US6673651B2 (en) * | 1999-07-01 | 2004-01-06 | Oki Electric Industry Co., Ltd. | Method of manufacturing semiconductor device including semiconductor elements mounted on base plate |
US20040004281A1 (en) * | 2002-07-03 | 2004-01-08 | Jin-Chuan Bai | Semiconductor package with heat sink |
US6677670B2 (en) * | 2000-04-25 | 2004-01-13 | Seiko Epson Corporation | Semiconductor device |
US20040012991A1 (en) * | 2002-07-18 | 2004-01-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory module |
US6683377B1 (en) * | 2000-05-30 | 2004-01-27 | Amkor Technology, Inc. | Multi-stacked memory package |
US20040021211A1 (en) * | 2002-08-05 | 2004-02-05 | Tessera, Inc. | Microelectronic adaptors, assemblies and methods |
US6690584B2 (en) * | 2000-08-14 | 2004-02-10 | Fujitsu Limited | Information-processing device having a crossbar-board connected to back panels on different sides |
US6689634B1 (en) * | 1999-09-22 | 2004-02-10 | Texas Instruments Incorporated | Modeling technique for selectively depopulating electrical contacts from a foot print of a grid array (BGA or LGA) package to increase device reliability |
US20040031972A1 (en) * | 2001-10-09 | 2004-02-19 | Tessera, Inc. | Stacked packages |
US6838761B2 (en) * | 2002-09-17 | 2005-01-04 | Chippac, Inc. | Semiconductor multi-package module having wire bond interconnect between stacked packages and having electrical shield |
US6839266B1 (en) * | 1999-09-14 | 2005-01-04 | Rambus Inc. | Memory module with offset data lines and bit line swizzle configuration |
US6841868B2 (en) * | 1996-10-08 | 2005-01-11 | Micron Technology, Inc. | Memory modules including capacity for additional memory |
US6841855B2 (en) * | 2003-04-28 | 2005-01-11 | Intel Corporation | Electronic package having a flexible substrate with ends connected to one another |
US20050018495A1 (en) * | 2004-01-29 | 2005-01-27 | Netlist, Inc. | Arrangement of integrated circuits in a memory module |
US6849949B1 (en) * | 1999-09-27 | 2005-02-01 | Samsung Electronics Co., Ltd. | Thin stacked package |
US20050035440A1 (en) * | 2001-08-22 | 2005-02-17 | Tessera, Inc. | Stacked chip assembly with stiffening layer |
US6858910B2 (en) * | 2000-01-26 | 2005-02-22 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
US20050040508A1 (en) * | 2003-08-22 | 2005-02-24 | Jong-Joo Lee | Area array type package stack and manufacturing method thereof |
US6984885B1 (en) * | 2000-02-10 | 2006-01-10 | Renesas Technology Corp. | Semiconductor device having densely stacked semiconductor chips |
US6998704B2 (en) * | 2002-08-30 | 2006-02-14 | Nec Corporation | Semiconductor device and method for manufacturing the same, circuit board, electronic apparatus, and semiconductor device manufacturing apparatus |
US7180167B2 (en) * | 2001-10-26 | 2007-02-20 | Staktek Group L. P. | Low profile stacking system and method |
Family Cites Families (143)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3411122A (en) | 1966-01-13 | 1968-11-12 | Ibm | Electrical resistance element and method of fabricating |
US3436604A (en) | 1966-04-25 | 1969-04-01 | Texas Instruments Inc | Complex integrated circuit array and method for fabricating same |
US3654394A (en) | 1969-07-08 | 1972-04-04 | Gordon Eng Co | Field effect transistor switch, particularly for multiplexing |
US3772776A (en) | 1969-12-03 | 1973-11-20 | Thomas & Betts Corp | Method of interconnecting memory plane boards |
US3727064A (en) | 1971-03-17 | 1973-04-10 | Monsanto Co | Opto-isolator devices and method for the fabrication thereof |
US3746934A (en) | 1971-05-06 | 1973-07-17 | Siemens Ag | Stack arrangement of semiconductor chips |
US3766439A (en) | 1972-01-12 | 1973-10-16 | Gen Electric | Electronic module using flexible printed circuit board with heat sink means |
US3806767A (en) | 1973-03-15 | 1974-04-23 | Tek Wave Inc | Interboard connector |
US3983547A (en) | 1974-06-27 | 1976-09-28 | International Business Machines - Ibm | Three-dimensional bubble device |
US4103318A (en) | 1977-05-06 | 1978-07-25 | Ford Motor Company | Electronic multichip module |
US4288841A (en) | 1979-09-20 | 1981-09-08 | Bell Telephone Laboratories, Incorporated | Double cavity semiconductor chip carrier |
US4381421A (en) | 1980-07-01 | 1983-04-26 | Tektronix, Inc. | Electromagnetic shield for electronic equipment |
US4398235A (en) | 1980-09-11 | 1983-08-09 | General Motors Corporation | Vertical integrated circuit package integration |
JPS57181146A (en) | 1981-04-30 | 1982-11-08 | Hitachi Ltd | Resin-sealed semiconductor device |
US4513368A (en) | 1981-05-22 | 1985-04-23 | Data General Corporation | Digital data processing system having object-based logical memory addressing and self-structuring modular memory |
US4406508A (en) | 1981-07-02 | 1983-09-27 | Thomas & Betts Corporation | Dual-in-line package assembly |
US4420794A (en) | 1981-09-10 | 1983-12-13 | Research, Incorporated | Integrated circuit switch |
US4466183A (en) * | 1982-05-03 | 1984-08-21 | National Semiconductor Corporation | Integrated circuit packaging process |
US4712129A (en) | 1983-12-12 | 1987-12-08 | Texas Instruments Incorporated | Integrated circuit device with textured bar cover |
KR890004820B1 (en) | 1984-03-28 | 1989-11-27 | 인터내셔널 비지네스 머신즈 코포레이션 | Stacked double density memory module using industry standard memory chips |
US4587596A (en) | 1984-04-09 | 1986-05-06 | Amp Incorporated | High density mother/daughter circuit board connector |
DE3675321D1 (en) | 1985-08-16 | 1990-12-06 | Dai Ichi Seiko Co Ltd | SEMICONDUCTOR ARRANGEMENT WITH PACK OF PIN PLUG TYPE. |
US4696525A (en) | 1985-12-13 | 1987-09-29 | Amp Incorporated | Socket for stacking integrated circuit packages |
US4763188A (en) * | 1986-08-08 | 1988-08-09 | Thomas Johnson | Packaging system for multiple semiconductor devices |
US4839717A (en) | 1986-12-19 | 1989-06-13 | Fairchild Semiconductor Corporation | Ceramic package for high frequency semiconductor devices |
US4821007A (en) | 1987-02-06 | 1989-04-11 | Tektronix, Inc. | Strip line circuit component and method of manufacture |
US5159535A (en) | 1987-03-11 | 1992-10-27 | International Business Machines Corporation | Method and apparatus for mounting a flexible film semiconductor chip carrier on a circuitized substrate |
US4862249A (en) | 1987-04-17 | 1989-08-29 | Xoc Devices, Inc. | Packaging system for stacking integrated circuits |
IT1214254B (en) | 1987-09-23 | 1990-01-10 | Sgs Microelettonica S P A | SEMICONDUCTOR DEVICE IN PLASTIC OR CERAMIC CONTAINER WITH "CHIPS" FIXED ON BOTH SIDES OF THE CENTRAL ISLAND OF THE "FRAME". |
US5016138A (en) | 1987-10-27 | 1991-05-14 | Woodman John K | Three dimensional integrated circuit package |
US4833568A (en) | 1988-01-29 | 1989-05-23 | Berhold G Mark | Three-dimensional circuit component assembly and method corresponding thereto |
US5138434A (en) | 1991-01-22 | 1992-08-11 | Micron Technology, Inc. | Packaging for semiconductor logic devices |
US4956694A (en) | 1988-11-04 | 1990-09-11 | Dense-Pac Microsystems, Inc. | Integrated circuit chip stacking |
EP0388157B1 (en) | 1989-03-15 | 1994-02-16 | Ngk Insulators, Ltd. | Ceramic lid for sealing semiconductor element and method of sealing a semiconductor element in a ceramic package |
JP2647194B2 (en) | 1989-04-17 | 1997-08-27 | 住友電気工業株式会社 | Semiconductor package sealing method |
US4953060A (en) | 1989-05-05 | 1990-08-28 | Ncr Corporation | Stackable integrated circuit chip package with improved heat removal |
US5104820A (en) | 1989-07-07 | 1992-04-14 | Irvine Sensors Corporation | Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting |
US5057903A (en) | 1989-07-17 | 1991-10-15 | Microelectronics And Computer Technology Corporation | Thermal heat sink encapsulated integrated circuit |
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US5068708A (en) | 1989-10-02 | 1991-11-26 | Advanced Micro Devices, Inc. | Ground plane for plastic encapsulated integrated circuit die packages |
US5012323A (en) | 1989-11-20 | 1991-04-30 | Micron Technology, Inc. | Double-die semiconductor package having a back-bonded die and a face-bonded die interconnected on a single leadframe |
US5229641A (en) | 1989-11-25 | 1993-07-20 | Hitachi Maxell, Ltd. | Semiconductor card and manufacturing method therefor |
US5041902A (en) | 1989-12-14 | 1991-08-20 | Motorola, Inc. | Molded electronic package with compression structures |
JPH03227541A (en) | 1990-02-01 | 1991-10-08 | Hitachi Ltd | Semiconductor device |
US5041015A (en) | 1990-03-30 | 1991-08-20 | Cal Flex, Inc. | Electrical jumper assembly |
US5345205A (en) | 1990-04-05 | 1994-09-06 | General Electric Company | Compact high density interconnected microwave system |
US5261068A (en) | 1990-05-25 | 1993-11-09 | Dell Usa L.P. | Dual path memory retrieval system for an interleaved dynamic RAM memory unit |
US5050039A (en) | 1990-06-26 | 1991-09-17 | Digital Equipment Corporation | Multiple circuit chip mounting and cooling arrangement |
US5377077A (en) | 1990-08-01 | 1994-12-27 | Staktek Corporation | Ultra high density integrated circuit packages method and apparatus |
US5148265A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
JP3242101B2 (en) | 1990-10-05 | 2001-12-25 | 三菱電機株式会社 | Semiconductor integrated circuit |
JPH04162556A (en) | 1990-10-25 | 1992-06-08 | Mitsubishi Electric Corp | Lead frame and its manufacturing |
US5117282A (en) | 1990-10-29 | 1992-05-26 | Harris Corporation | Stacked configuration for integrated circuit devices |
US5219794A (en) | 1991-03-14 | 1993-06-15 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of fabricating same |
US5158912A (en) | 1991-04-09 | 1992-10-27 | Digital Equipment Corporation | Integral heatsink semiconductor package |
US5138430A (en) | 1991-06-06 | 1992-08-11 | International Business Machines Corporation | High performance versatile thermally enhanced IC chip mounting |
JPH0513666A (en) | 1991-06-29 | 1993-01-22 | Sony Corp | Complex semiconductor device |
US5214307A (en) | 1991-07-08 | 1993-05-25 | Micron Technology, Inc. | Lead frame for semiconductor devices having improved adhesive bond line control |
US5311401A (en) | 1991-07-09 | 1994-05-10 | Hughes Aircraft Company | Stacked chip assembly and manufacturing method therefor |
US5252857A (en) | 1991-08-05 | 1993-10-12 | International Business Machines Corporation | Stacked DCA memory chips |
JP2967621B2 (en) | 1991-08-27 | 1999-10-25 | 日本電気株式会社 | Method of manufacturing package for semiconductor device |
US5168926A (en) | 1991-09-25 | 1992-12-08 | Intel Corporation | Heat sink design integrating interface material |
US5241454A (en) | 1992-01-22 | 1993-08-31 | International Business Machines Corporation | Mutlilayered flexible circuit package |
US5262927A (en) | 1992-02-07 | 1993-11-16 | Lsi Logic Corporation | Partially-molded, PCB chip carrier package |
US5224023A (en) | 1992-02-10 | 1993-06-29 | Smith Gary W | Foldable electronic assembly module |
US5243133A (en) | 1992-02-18 | 1993-09-07 | International Business Machines, Inc. | Ceramic chip carrier with lead frame or edge clip |
US5222014A (en) | 1992-03-02 | 1993-06-22 | Motorola, Inc. | Three-dimensional multi-chip pad array carrier |
US5229916A (en) | 1992-03-04 | 1993-07-20 | International Business Machines Corporation | Chip edge interconnect overlay element |
US5259770A (en) | 1992-03-19 | 1993-11-09 | Amp Incorporated | Impedance controlled elastomeric connector |
US5361228A (en) | 1992-04-30 | 1994-11-01 | Fuji Photo Film Co., Ltd. | IC memory card system having a common data and address bus |
MY109101A (en) * | 1992-05-25 | 1996-12-31 | Hitachi Ltd | Thin type semiconductor device, module structure using the device and method of mounting the device on board |
US5247423A (en) | 1992-05-26 | 1993-09-21 | Motorola, Inc. | Stacking three dimensional leadless multi-chip module and method for making the same |
JPH07501906A (en) * | 1992-06-02 | 1995-02-23 | アジレント・テクノロジーズ・インク | Computer-aided design method and apparatus for multilevel interconnect technology |
US5343366A (en) | 1992-06-24 | 1994-08-30 | International Business Machines Corporation | Packages for stacked integrated circuit chip cubes |
US5729894A (en) * | 1992-07-21 | 1998-03-24 | Lsi Logic Corporation | Method of assembling ball bump grid array semiconductor packages |
US5402006A (en) | 1992-11-10 | 1995-03-28 | Texas Instruments Incorporated | Semiconductor device with enhanced adhesion between heat spreader and leads and plastic mold compound |
US5313097A (en) | 1992-11-16 | 1994-05-17 | International Business Machines, Corp. | High density memory module |
US5375041A (en) | 1992-12-02 | 1994-12-20 | Intel Corporation | Ra-tab array bump tab tape based I.C. package |
US5347428A (en) | 1992-12-03 | 1994-09-13 | Irvine Sensors Corporation | Module comprising IC memory stack dedicated to and structurally combined with an IC microprocessor chip |
US5337388A (en) | 1993-08-03 | 1994-08-09 | International Business Machines Corporation | Matrix of pluggable connectors for connecting large numbers of clustered electrical and/or opticcal cables to a module |
US5502333A (en) * | 1994-03-30 | 1996-03-26 | International Business Machines Corporation | Semiconductor stack structures and fabrication/sparing methods utilizing programmable spare circuit |
JPH088389A (en) * | 1994-04-20 | 1996-01-12 | Fujitsu Ltd | Semiconductor device and semiconductor device unit |
JPH07312469A (en) * | 1994-05-16 | 1995-11-28 | Nippon Mektron Ltd | Structure of bent part of multilayer flexible circuit board |
US5509197A (en) * | 1994-06-10 | 1996-04-23 | Xetel Corporation | Method of making substrate edge connector |
JPH0846136A (en) * | 1994-07-26 | 1996-02-16 | Fujitsu Ltd | Semiconductor device |
US5922061A (en) * | 1995-10-20 | 1999-07-13 | Iq Systems | Methods and apparatus for implementing high speed data communications |
US6002167A (en) * | 1995-09-22 | 1999-12-14 | Hitachi Cable, Ltd. | Semiconductor device having lead on chip structure |
KR0184076B1 (en) * | 1995-11-28 | 1999-03-20 | 김광호 | Three-dimensional stacked package |
US5646446A (en) * | 1995-12-22 | 1997-07-08 | Fairchild Space And Defense Corporation | Three-dimensional flexible assembly of integrated circuits |
JP2810647B2 (en) * | 1996-04-30 | 1998-10-15 | 山一電機株式会社 | IC package |
US6247228B1 (en) * | 1996-08-12 | 2001-06-19 | Tessera, Inc. | Electrical connection with inwardly deformable contacts |
JP3695893B2 (en) * | 1996-12-03 | 2005-09-14 | 沖電気工業株式会社 | Semiconductor device, manufacturing method and mounting method thereof |
US7149095B2 (en) * | 1996-12-13 | 2006-12-12 | Tessera, Inc. | Stacked microelectronic assemblies |
US6225688B1 (en) * | 1997-12-11 | 2001-05-01 | Tessera, Inc. | Stacked microelectronic assembly and method therefor |
JP3455040B2 (en) * | 1996-12-16 | 2003-10-06 | 株式会社日立製作所 | Source clock synchronous memory system and memory unit |
JP3011233B2 (en) * | 1997-05-02 | 2000-02-21 | 日本電気株式会社 | Semiconductor package and its semiconductor mounting structure |
US6208521B1 (en) * | 1997-05-19 | 2001-03-27 | Nitto Denko Corporation | Film carrier and laminate type mounting structure using same |
US5986209A (en) * | 1997-07-09 | 1999-11-16 | Micron Technology, Inc. | Package stack via bottom leaded plastic (BLP) packaging |
JPH1197619A (en) * | 1997-07-25 | 1999-04-09 | Oki Electric Ind Co Ltd | Semiconductor device, manufacture thereof and mounting thereof |
US6040624A (en) * | 1997-10-02 | 2000-03-21 | Motorola, Inc. | Semiconductor device package and method |
US6097087A (en) * | 1997-10-31 | 2000-08-01 | Micron Technology, Inc. | Semiconductor package including flex circuit, interconnects and dense array external contacts |
US6329709B1 (en) * | 1998-05-11 | 2001-12-11 | Micron Technology, Inc. | Interconnections for a semiconductor device |
US6300679B1 (en) * | 1998-06-01 | 2001-10-09 | Semiconductor Components Industries, Llc | Flexible substrate for packaging a semiconductor component |
JP3842444B2 (en) * | 1998-07-24 | 2006-11-08 | 富士通株式会社 | Manufacturing method of semiconductor device |
JP2000068444A (en) * | 1998-08-26 | 2000-03-03 | Mitsubishi Electric Corp | Semiconductor device |
DE69938582T2 (en) * | 1998-09-09 | 2009-06-04 | Seiko Epson Corp. | SEMICONDUCTOR ELEMENT, ITS MANUFACTURE, PCB AND ELECTRONIC APPARATUS |
US6360935B1 (en) * | 1999-01-26 | 2002-03-26 | Board Of Regents Of The University Of Texas System | Apparatus and method for assessing solderability |
US6222737B1 (en) * | 1999-04-23 | 2001-04-24 | Dense-Pac Microsystems, Inc. | Universal package and method of forming the same |
JP2000353767A (en) * | 1999-05-14 | 2000-12-19 | Universal Instr Corp | Board for mounting electronic component, package, mounting method, and method for housing integrated circuit chip in package |
US6376769B1 (en) * | 1999-05-18 | 2002-04-23 | Amerasia International Technology, Inc. | High-density electronic package, and method for making same |
TW409377B (en) * | 1999-05-21 | 2000-10-21 | Siliconware Precision Industries Co Ltd | Small scale ball grid array package |
DE19933265A1 (en) * | 1999-07-15 | 2001-02-01 | Siemens Ag | TSOP memory chip package assembly |
US6675469B1 (en) * | 1999-08-11 | 2004-01-13 | Tessera, Inc. | Vapor phase connection techniques |
US6572387B2 (en) * | 1999-09-24 | 2003-06-03 | Staktek Group, L.P. | Flexible circuit connector for stacked chip module |
CN1230046C (en) * | 1999-10-01 | 2005-11-30 | 精工爱普生株式会社 | Wiring board, semiconductor device and method of producing, testing and packaging the same, and circuit board and electronic equipment |
US6441476B1 (en) * | 2000-10-18 | 2002-08-27 | Seiko Epson Corporation | Flexible tape carrier with external terminals formed on interposers |
DE19954888C2 (en) * | 1999-11-15 | 2002-01-10 | Infineon Technologies Ag | Packaging for a semiconductor chip |
US6262895B1 (en) * | 2000-01-13 | 2001-07-17 | John A. Forthun | Stackable chip package with flex carrier |
JP2001203319A (en) * | 2000-01-18 | 2001-07-27 | Sony Corp | Laminated semiconductor device |
US6528870B2 (en) * | 2000-01-28 | 2003-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having a plurality of stacked wiring boards |
JP2001217388A (en) * | 2000-02-01 | 2001-08-10 | Sony Corp | Electronic device and method for manufacturing the same |
US6444921B1 (en) * | 2000-02-03 | 2002-09-03 | Fujitsu Limited | Reduced stress and zero stress interposers for integrated-circuit chips, multichip substrates, and the like |
US6552910B1 (en) * | 2000-06-28 | 2003-04-22 | Micron Technology, Inc. | Stacked-die assemblies with a plurality of microelectronic devices and methods of manufacture |
US6560117B2 (en) * | 2000-06-28 | 2003-05-06 | Micron Technology, Inc. | Packaged microelectronic die assemblies and methods of manufacture |
JP3390412B2 (en) * | 2000-08-07 | 2003-03-24 | 株式会社キャットアイ | head lamp |
AU2002254027A1 (en) * | 2001-02-27 | 2002-09-12 | Chippac, Inc. | Tape ball grid array semiconductor package structure and assembly process |
JP3560333B2 (en) * | 2001-03-08 | 2004-09-02 | 独立行政法人 科学技術振興機構 | Metal nanowire and method for producing the same |
US6884653B2 (en) * | 2001-03-21 | 2005-04-26 | Micron Technology, Inc. | Folded interposer |
US6910268B2 (en) * | 2001-03-27 | 2005-06-28 | Formfactor, Inc. | Method for fabricating an IC interconnect system including an in-street integrated circuit wafer via |
US6707684B1 (en) * | 2001-04-02 | 2004-03-16 | Advanced Micro Devices, Inc. | Method and apparatus for direct connection between two integrated circuits via a connector |
US7115986B2 (en) * | 2001-05-02 | 2006-10-03 | Micron Technology, Inc. | Flexible ball grid array chip scale packages |
US6532162B2 (en) * | 2001-05-26 | 2003-03-11 | Intel Corporation | Reference plane of integrated circuit packages |
US6927471B2 (en) * | 2001-09-07 | 2005-08-09 | Peter C. Salmon | Electronic system modules and method of fabrication |
KR20030029743A (en) * | 2001-10-10 | 2003-04-16 | 삼성전자주식회사 | Stack package using flexible double wiring substrate |
US6620651B2 (en) * | 2001-10-23 | 2003-09-16 | National Starch And Chemical Investment Holding Corporation | Adhesive wafers for die attach application |
SG121707A1 (en) * | 2002-03-04 | 2006-05-26 | Micron Technology Inc | Method and apparatus for flip-chip packaging providing testing capability |
US6590282B1 (en) * | 2002-04-12 | 2003-07-08 | Industrial Technology Research Institute | Stacked semiconductor package formed on a substrate and method for fabrication |
US6707148B1 (en) * | 2002-05-21 | 2004-03-16 | National Semiconductor Corporation | Bumped integrated circuits for optical applications |
US6600222B1 (en) * | 2002-07-17 | 2003-07-29 | Intel Corporation | Stacked microelectronic packages |
US7246431B2 (en) * | 2002-09-06 | 2007-07-24 | Tessera, Inc. | Methods of making microelectronic packages including folded substrates |
US6869825B2 (en) * | 2002-12-31 | 2005-03-22 | Intel Corporation | Folded BGA package design with shortened communication paths and more electrical routing flexibility |
US6879047B1 (en) * | 2003-02-19 | 2005-04-12 | Amkor Technology, Inc. | Stacking structure for semiconductor devices using a folded over flexible substrate and method therefor |
DE10319984B4 (en) * | 2003-05-05 | 2009-09-03 | Qimonda Ag | Device for cooling memory modules |
-
2003
- 2003-05-09 US US10/435,192 patent/US7485951B2/en not_active Expired - Lifetime
-
2007
- 2007-11-16 US US11/941,718 patent/US20080067662A1/en not_active Abandoned
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3372310A (en) * | 1965-04-30 | 1968-03-05 | Radiation Inc | Universal modular packages for integrated circuits |
US3718842A (en) * | 1972-04-21 | 1973-02-27 | Texas Instruments Inc | Liquid crystal display mounting structure |
US4079511A (en) * | 1976-07-30 | 1978-03-21 | Amp Incorporated | Method for packaging hermetically sealed integrated circuit chips on lead frames |
US4429349A (en) * | 1980-09-30 | 1984-01-31 | Burroughs Corporation | Coil connector |
US4437235A (en) * | 1980-12-29 | 1984-03-20 | Honeywell Information Systems Inc. | Integrated circuit package |
US4567543A (en) * | 1983-02-15 | 1986-01-28 | Motorola, Inc. | Double-sided flexible electronic circuit module |
US4727513A (en) * | 1983-09-02 | 1988-02-23 | Wang Laboratories, Inc. | Signal in-line memory module |
US4645944A (en) * | 1983-09-05 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | MOS register for selecting among various data inputs |
US4733461A (en) * | 1984-12-28 | 1988-03-29 | Micro Co., Ltd. | Method of stacking printed circuit boards |
US4724611A (en) * | 1985-08-23 | 1988-02-16 | Nec Corporation | Method for producing semiconductor module |
US4722691A (en) * | 1986-02-03 | 1988-02-02 | General Motors Corporation | Header assembly for a printed circuit board |
US4903169A (en) * | 1986-04-03 | 1990-02-20 | Matsushita Electric Industrial Co., Ltd. | Shielded high frequency apparatus having partitioned shield case, and method of manufacture thereof |
US4982265A (en) * | 1987-06-24 | 1991-01-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
US4983533A (en) * | 1987-10-28 | 1991-01-08 | Irvine Sensors Corporation | High-density electronic modules - process and product |
US5198888A (en) * | 1987-12-28 | 1993-03-30 | Hitachi, Ltd. | Semiconductor stacked device |
US4985703A (en) * | 1988-02-03 | 1991-01-15 | Nec Corporation | Analog multiplexer |
US4891789A (en) * | 1988-03-03 | 1990-01-02 | Bull Hn Information Systems, Inc. | Surface mounted multilayer memory printed circuit board |
US4911643A (en) * | 1988-10-11 | 1990-03-27 | Beta Phase, Inc. | High density and high signal integrity connector |
US5276418A (en) * | 1988-11-16 | 1994-01-04 | Motorola, Inc. | Flexible substrate electronic assembly |
US5081067A (en) * | 1989-02-10 | 1992-01-14 | Fujitsu Limited | Ceramic package type semiconductor device and method of assembling the same |
US4992849A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded board multiple integrated circuit module |
US4992850A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded simm module |
US5191404A (en) * | 1989-12-20 | 1993-03-02 | Digital Equipment Corporation | High density memory array packaging |
US5279029A (en) * | 1990-08-01 | 1994-01-18 | Staktek Corporation | Ultra high density integrated circuit packages method |
US5289346A (en) * | 1991-02-26 | 1994-02-22 | Microelectronics And Computer Technology Corporation | Peripheral to area adapter with protective bumper for an integrated circuit chip |
US5394010A (en) * | 1991-03-13 | 1995-02-28 | Kabushiki Kaisha Toshiba | Semiconductor assembly having laminated semiconductor devices |
US5289062A (en) * | 1991-03-18 | 1994-02-22 | Quality Semiconductor, Inc. | Fast transmission gate switch |
US5099393A (en) * | 1991-03-25 | 1992-03-24 | International Business Machines Corporation | Electronic package for high density applications |
US5714802A (en) * | 1991-06-18 | 1998-02-03 | Micron Technology, Inc. | High-density electronic module |
US5397916A (en) * | 1991-12-10 | 1995-03-14 | Normington; Peter J. C. | Semiconductor device including stacked die |
US5281852A (en) * | 1991-12-10 | 1994-01-25 | Normington Peter J C | Semiconductor device including stacked die |
US5198965A (en) * | 1991-12-18 | 1993-03-30 | International Business Machines Corporation | Free form packaging of specific functions within a computer system |
US5394300A (en) * | 1992-09-04 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Thin multilayered IC memory card |
US5394303A (en) * | 1992-09-11 | 1995-02-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5708297A (en) * | 1992-09-16 | 1998-01-13 | Clayton; James E. | Thin multichip module |
US5484959A (en) * | 1992-12-11 | 1996-01-16 | Staktek Corporation | High density lead-on-package fabrication method and apparatus |
US5384690A (en) * | 1993-07-27 | 1995-01-24 | International Business Machines Corporation | Flex laminate package for a parallel processor |
US5396573A (en) * | 1993-08-03 | 1995-03-07 | International Business Machines Corporation | Pluggable connectors for connecting large numbers of electrical and/or optical cables to a module through a seal |
US5600178A (en) * | 1993-10-08 | 1997-02-04 | Texas Instruments Incorporated | Semiconductor package having interdigitated leads |
US5386341A (en) * | 1993-11-01 | 1995-01-31 | Motorola, Inc. | Flexible substrate folded in a U-shape with a rigidizer plate located in the notch of the U-shape |
US5594275A (en) * | 1993-11-18 | 1997-01-14 | Samsung Electronics Co., Ltd. | J-leaded semiconductor package having a plurality of stacked ball grid array packages |
US5493476A (en) * | 1994-03-07 | 1996-02-20 | Staktek Corporation | Bus communication system for stacked high density integrated circuit packages with bifurcated distal lead ends |
US5592364A (en) * | 1995-01-24 | 1997-01-07 | Staktek Corporation | High density integrated circuit module with complex electrical interconnect rails |
US5491612A (en) * | 1995-02-21 | 1996-02-13 | Fairchild Space And Defense Corporation | Three-dimensional modular assembly of integrated circuits |
US5717556A (en) * | 1995-04-26 | 1998-02-10 | Nec Corporation | Printed-wiring board having plural parallel-connected interconnections |
US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
US6025642A (en) * | 1995-08-17 | 2000-02-15 | Staktek Corporation | Ultra high density integrated circuit packages |
US6013948A (en) * | 1995-11-27 | 2000-01-11 | Micron Technology, Inc. | Stackable chip scale semiconductor package with mating contacts on opposed surfaces |
US20020001216A1 (en) * | 1996-02-26 | 2002-01-03 | Toshio Sugano | Semiconductor device and process for manufacturing the same |
US6178093B1 (en) * | 1996-06-28 | 2001-01-23 | International Business Machines Corporation | Information handling system with circuit assembly having holes filled with filler material |
US6841868B2 (en) * | 1996-10-08 | 2005-01-11 | Micron Technology, Inc. | Memory modules including capacity for additional memory |
US6336262B1 (en) * | 1996-10-31 | 2002-01-08 | International Business Machines Corporation | Process of forming a capacitor with multi-level interconnection technology |
US6014316A (en) * | 1997-06-13 | 2000-01-11 | Irvine Sensors Corporation | IC stack utilizing BGA contacts |
US6028352A (en) * | 1997-06-13 | 2000-02-22 | Irvine Sensors Corporation | IC stack utilizing secondary leadframes |
US5869353A (en) * | 1997-11-17 | 1999-02-09 | Dense-Pac Microsystems, Inc. | Modular panel stacking process |
US6504104B2 (en) * | 1997-12-10 | 2003-01-07 | Siemens Aktiengesellschaft | Flexible wiring for the transformation of a substrate with edge contacts into a ball grid array |
US6186106B1 (en) * | 1997-12-29 | 2001-02-13 | Visteon Global Technologies, Inc. | Apparatus for routing electrical signals in an engine |
US6021048A (en) * | 1998-02-17 | 2000-02-01 | Smith; Gary W. | High speed memory module |
US6028365A (en) * | 1998-03-30 | 2000-02-22 | Micron Technology, Inc. | Integrated circuit package and method of fabrication |
US6172874B1 (en) * | 1998-04-06 | 2001-01-09 | Silicon Graphics, Inc. | System for stacking of integrated circuit packages |
US6180881B1 (en) * | 1998-05-05 | 2001-01-30 | Harlan Ruben Isaak | Chip stack and method of making same |
US6187652B1 (en) * | 1998-09-14 | 2001-02-13 | Fujitsu Limited | Method of fabrication of multiple-layer high density substrate |
US6347394B1 (en) * | 1998-11-04 | 2002-02-12 | Micron Technology, Inc. | Buffering circuit embedded in an integrated circuit device module used for buffering clocks and other input signals |
US6521530B2 (en) * | 1998-11-13 | 2003-02-18 | Fujitsu Limited | Composite interposer and method for producing a composite interposer |
US6343020B1 (en) * | 1998-12-28 | 2002-01-29 | Foxconn Precision Components Co., Ltd. | Memory module |
US6351029B1 (en) * | 1999-05-05 | 2002-02-26 | Harlan R. Isaak | Stackable flex circuit chip package and method of making same |
US6514793B2 (en) * | 1999-05-05 | 2003-02-04 | Dpac Technologies Corp. | Stackable flex circuit IC package and method of making same |
US6673651B2 (en) * | 1999-07-01 | 2004-01-06 | Oki Electric Industry Co., Ltd. | Method of manufacturing semiconductor device including semiconductor elements mounted on base plate |
US6839266B1 (en) * | 1999-09-14 | 2005-01-04 | Rambus Inc. | Memory module with offset data lines and bit line swizzle configuration |
US6689634B1 (en) * | 1999-09-22 | 2004-02-10 | Texas Instruments Incorporated | Modeling technique for selectively depopulating electrical contacts from a foot print of a grid array (BGA or LGA) package to increase device reliability |
US6849949B1 (en) * | 1999-09-27 | 2005-02-01 | Samsung Electronics Co., Ltd. | Thin stacked package |
US6858910B2 (en) * | 2000-01-26 | 2005-02-22 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
US6984885B1 (en) * | 2000-02-10 | 2006-01-10 | Renesas Technology Corp. | Semiconductor device having densely stacked semiconductor chips |
US6677670B2 (en) * | 2000-04-25 | 2004-01-13 | Seiko Epson Corporation | Semiconductor device |
US6522018B1 (en) * | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
US20020006032A1 (en) * | 2000-05-23 | 2002-01-17 | Chris Karabatsos | Low-profile registered DIMM |
US6683377B1 (en) * | 2000-05-30 | 2004-01-27 | Amkor Technology, Inc. | Multi-stacked memory package |
US6690584B2 (en) * | 2000-08-14 | 2004-02-10 | Fujitsu Limited | Information-processing device having a crossbar-board connected to back panels on different sides |
US6526549B1 (en) * | 2000-09-14 | 2003-02-25 | Sun Microsystems, Inc. | Hierarchical parasitic capacitance extraction for ultra large scale integrated circuits |
US6349050B1 (en) * | 2000-10-10 | 2002-02-19 | Rambus, Inc. | Methods and systems for reducing heat flux in memory systems |
US20030002262A1 (en) * | 2001-07-02 | 2003-01-02 | Martin Benisek | Electronic printed circuit board having a plurality of identically designed, housing-encapsulated semiconductor memories |
US6850414B2 (en) * | 2001-07-02 | 2005-02-01 | Infineon Technologies Ag | Electronic printed circuit board having a plurality of identically designed, housing-encapsulated semiconductor memories |
US20030016710A1 (en) * | 2001-07-19 | 2003-01-23 | Satoshi Komoto | Semiconductor laser device including light receiving element for receiving monitoring laser beam |
US20030020153A1 (en) * | 2001-07-24 | 2003-01-30 | Ted Bruce | Chip stack with differing chip package types |
US6509639B1 (en) * | 2001-07-27 | 2003-01-21 | Charles W. C. Lin | Three-dimensional stacked semiconductor package |
US20030026155A1 (en) * | 2001-08-01 | 2003-02-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory module and register buffer device for use in the same |
US20030035328A1 (en) * | 2001-08-08 | 2003-02-20 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device shiftable to test mode in module as well as semiconductor memory module using the same |
US20050035440A1 (en) * | 2001-08-22 | 2005-02-17 | Tessera, Inc. | Stacked chip assembly with stiffening layer |
US20040031972A1 (en) * | 2001-10-09 | 2004-02-19 | Tessera, Inc. | Stacked packages |
US7180167B2 (en) * | 2001-10-26 | 2007-02-20 | Staktek Group L. P. | Low profile stacking system and method |
US20040000708A1 (en) * | 2001-10-26 | 2004-01-01 | Staktek Group, L.P. | Memory expansion and chip scale stacking system and method |
US20040004281A1 (en) * | 2002-07-03 | 2004-01-08 | Jin-Chuan Bai | Semiconductor package with heat sink |
US20040012991A1 (en) * | 2002-07-18 | 2004-01-22 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory module |
US20040021211A1 (en) * | 2002-08-05 | 2004-02-05 | Tessera, Inc. | Microelectronic adaptors, assemblies and methods |
US6998704B2 (en) * | 2002-08-30 | 2006-02-14 | Nec Corporation | Semiconductor device and method for manufacturing the same, circuit board, electronic apparatus, and semiconductor device manufacturing apparatus |
US6838761B2 (en) * | 2002-09-17 | 2005-01-04 | Chippac, Inc. | Semiconductor multi-package module having wire bond interconnect between stacked packages and having electrical shield |
US6841855B2 (en) * | 2003-04-28 | 2005-01-11 | Intel Corporation | Electronic package having a flexible substrate with ends connected to one another |
US20050040508A1 (en) * | 2003-08-22 | 2005-02-24 | Jong-Joo Lee | Area array type package stack and manufacturing method thereof |
US20050018495A1 (en) * | 2004-01-29 | 2005-01-27 | Netlist, Inc. | Arrangement of integrated circuits in a memory module |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100025835A1 (en) * | 2008-08-01 | 2010-02-04 | Oh Jihoon | Integrated circuit package stacking system |
US8004093B2 (en) * | 2008-08-01 | 2011-08-23 | Stats Chippac Ltd. | Integrated circuit package stacking system |
US20120326304A1 (en) * | 2011-06-24 | 2012-12-27 | Warren Robert W | Externally Wire Bondable Chip Scale Package in a System-in-Package Module |
Also Published As
Publication number | Publication date |
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US7485951B2 (en) | 2009-02-03 |
US20040000707A1 (en) | 2004-01-01 |
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AS | Assignment |
Owner name: STAKTEK GROUP L.P., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ROPER, DAVID L.;HART, CURTIS;WILDER, JAMES;AND OTHERS;REEL/FRAME:020130/0638;SIGNING DATES FROM 20030423 TO 20030508 |
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