US20080289764A1 - End point detection electrode system and etch station - Google Patents

End point detection electrode system and etch station Download PDF

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Publication number
US20080289764A1
US20080289764A1 US11/753,650 US75365007A US2008289764A1 US 20080289764 A1 US20080289764 A1 US 20080289764A1 US 75365007 A US75365007 A US 75365007A US 2008289764 A1 US2008289764 A1 US 2008289764A1
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metal electrode
electrode
inches
approximately
end point
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US11/753,650
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Erik D. Berridge
Kirk G. Berridge
Camille P. Bowne
David A. Drotar
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International Business Machines Corp
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International Business Machines Corp
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Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BERRIDGE, ERIK D., BERRIDGE, KIRK G., BOWNE, CAMILLE P., DROTAR, DAVID A.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Definitions

  • the disclosure relates generally to integrated chip (IC) fabrication, and more particularly, to an end point detection electrode system.
  • process endpoint control has been achieved by monitoring one or more electrical properties (e.g., impedance) in the liquid bath medium in which the wet process is conducted.
  • electrical properties e.g., impedance
  • the change of such electrical property(ies) is correlated to the actual state of the wafer(s) being processed such that the process can be terminated or altered when a target electrical property value and/or rate of change is achieved. Examples of such processes are described in U.S. Pat. Nos.
  • One electrode system used in the above patents includes two linear and parallel electrodes. While the known technique provides some process control, it can be difficult to interpret the electrical signal corresponding to the monitored electrical property using the current electrode systems. For example, current IC chip fabrication techniques use a large variety of etch recipes and function at such small dimensions that current electrode systems are inadequate. In particular, current electrode systems do not provide a signal of adequate amplitude, and may be too sensitive to wafer orientation, and part-to-part variation to produce reliable monitoring feedback. These problems can lead to operator and/or machine error in interpreting when to stop the wet process of interest such that the ideal manufacturing result is not achieved, e.g., over-etching or under-etching occurs.
  • the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode.
  • a first aspect of the disclosure provides an end point detection electrode system comprising: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second Mu-metal electrode surrounding the first Mu-metal electrode.
  • a second aspect of the disclosure provides an etch station comprising: a wet etchant bath; an end point detection electrode system including: an insulative mount, a first Mu-metal electrode coupled to the insulative mount, and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode; and means for monitoring an electrical characteristic between the first Mu-metal electrode and the second Mu-metal electrode and controlling the etching process based on the monitoring.
  • FIG. 1 shows one embodiment of an end point electrode system according to the disclosure.
  • FIG. 2 shows one embodiment of an etch station including the end point electrode system of FIG. 1 .
  • End point detection electrode system 100 may include an insulative mount 102 , which may be coupled to a mechanism (not shown) for moving electrode system 100 into and out of wet etchant bath 104 ( FIG. 2 ).
  • Insulative mount 102 may include any insulative material, but, in one embodiment, includes polyvinyl chloride (PVC).
  • a first Mu-metal electrode 110 is coupled to insulative mount 102
  • a second Mu-metal electrode 112 is also coupled to insulative mount 102 .
  • Each electrode 110 , 112 may be coupled in any fashion, e.g., embedding in insulative mount 102 , adhesive, etc.
  • “Mu metal” may include, for example, any highly magnetic permeable material, which makes it effective at screening static or low-frequency magnetic fields.
  • Mu-metal may include, for example, a nickel-iron-copper-molybdenum alloy (e.g., with 75% nickel, 15% iron, plus copper and molybdenum) that has a very high magnetic permeability.
  • second Mu-metal electrode 112 surrounds first Mu-metal electrode 110 .
  • first Mu-metal electrode 110 is substantially circular
  • second Mu-metal electrode 112 is substantially O-shaped.
  • the disclosure is not limited to circular or O-shaped electrodes.
  • First and second Mu-metal electrodes 110 , 112 may be substantially coaxial.
  • electrode system 100 is sized so as to accommodate a 300 mm wafer 120 ( FIG.2 ).
  • first Mu-metal electrode 110 may have a diameter D 1 of approximately 1.8 inches to approximately 2.2 inches, and preferably approximately 2 inches, with “approximately” in the range of ⁇ 0.1 inches.
  • Second Mu-metal electrode 112 may have an inner diameter D 2 of approximately 3.8 inches to approximately 4.2 inches and an outer diameter D 3 of approximately 4.8 inches to approximately 5.2 inches, with “approximately” in the range of ⁇ 0.1 inches.
  • Electrode system 100 is less susceptible to wafer orientation and part-to-part variation and exhibits improved signal amplitude, i.e., it is less sensitive to noise. As a result, electrode system 100 provides improved processing, reduced cycle time and less chemical usage.
  • FIG. 2 shows one embodiment of an etch station 200 according to one embodiment of the disclosure.
  • Etch station 200 includes a wet etchant bath 104 , which may include any wet etching liquid now known or later developed.
  • End station 200 includes an end point detection electrode system 100 , as described above.
  • end station 200 may also include any now known or later developed system(s) 130 , 132 for monitoring an electrical characteristic between first Mu-metal electrode 110 and second Mu-metal electrode 112 and for controlling the etching process based on the monitoring.
  • Systems 130 , 132 may include, for example, computerized analysis systems to determine factors such as end point detection, etch rate, average etch rate, etc., and/or robotic controllers to control movement and etching of wafer 120 and/or electrode system 100 .
  • the systems and etch stations as described above are used in the fabrication of integrated circuit chips.
  • the resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form.
  • the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections).
  • the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product.
  • the end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.

Abstract

An end point detection electrode system and an etch station including the electrode system are disclosed. In one embodiment, the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode.

Description

    BACKGROUND
  • 1. Technical Field
  • The disclosure relates generally to integrated chip (IC) fabrication, and more particularly, to an end point detection electrode system.
  • 2. Background Art
  • As integrated circuit devices increase in device density and the size of wafers used in integrated circuit manufacturing increase in size, there is a continued need for more precise manufacturing process control.
  • In wet processes (e.g., wet etching) used in some stages of integrated circuit manufacture, process endpoint control has been achieved by monitoring one or more electrical properties (e.g., impedance) in the liquid bath medium in which the wet process is conducted. The change of such electrical property(ies) is correlated to the actual state of the wafer(s) being processed such that the process can be terminated or altered when a target electrical property value and/or rate of change is achieved. Examples of such processes are described in U.S. Pat. Nos. 5,338,390; 5,445,705; 5,451,289; 5,456,788; 5,480,511; 5,501,766; 5,516,399; 5,788,801; and 6,843,880, the disclosures of which are incorporated herein by reference.
  • One electrode system used in the above patents includes two linear and parallel electrodes. While the known technique provides some process control, it can be difficult to interpret the electrical signal corresponding to the monitored electrical property using the current electrode systems. For example, current IC chip fabrication techniques use a large variety of etch recipes and function at such small dimensions that current electrode systems are inadequate. In particular, current electrode systems do not provide a signal of adequate amplitude, and may be too sensitive to wafer orientation, and part-to-part variation to produce reliable monitoring feedback. These problems can lead to operator and/or machine error in interpreting when to stop the wet process of interest such that the ideal manufacturing result is not achieved, e.g., over-etching or under-etching occurs.
    • SUMMARY
  • An end point detection electrode system and an etch station including the electrode system are disclosed. In one embodiment, the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode.
  • A first aspect of the disclosure provides an end point detection electrode system comprising: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second Mu-metal electrode surrounding the first Mu-metal electrode.
  • A second aspect of the disclosure provides an etch station comprising: a wet etchant bath; an end point detection electrode system including: an insulative mount, a first Mu-metal electrode coupled to the insulative mount, and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode; and means for monitoring an electrical characteristic between the first Mu-metal electrode and the second Mu-metal electrode and controlling the etching process based on the monitoring.
  • The illustrative aspects of the present disclosure are designed to solve the problems herein described and/or other problems not discussed.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • These and other features of this disclosure will be more readily understood from the following detailed description of the various aspects of the disclosure taken in conjunction with the accompanying drawings that depict various embodiments of the disclosure, in which:
  • FIG. 1 shows one embodiment of an end point electrode system according to the disclosure.
  • FIG. 2 shows one embodiment of an etch station including the end point electrode system of FIG. 1.
    •
  • It is noted that the drawings of the disclosure are not to scale. The drawings are intended to depict only typical aspects of the disclosure, and therefore should not be considered as limiting the scope of the disclosure. In the drawings, like numbering represents like elements between the drawings.
    • DETAILED DESCRIPTION
  • Referring to FIG. 1, one embodiment of an end point detection electrode system 100 according to the disclosure is shown. End point detection electrode system 100 (hereinafter “electrode system 100”) may include an insulative mount 102, which may be coupled to a mechanism (not shown) for moving electrode system 100 into and out of wet etchant bath 104 (FIG. 2). Insulative mount 102 may include any insulative material, but, in one embodiment, includes polyvinyl chloride (PVC).
  • A first Mu-metal electrode 110 is coupled to insulative mount 102, and a second Mu-metal electrode 112 is also coupled to insulative mount 102. Each electrode 110, 112 may be coupled in any fashion, e.g., embedding in insulative mount 102, adhesive, etc. “Mu metal” may include, for example, any highly magnetic permeable material, which makes it effective at screening static or low-frequency magnetic fields. In one embodiment, Mu-metal may include, for example, a nickel-iron-copper-molybdenum alloy (e.g., with 75% nickel, 15% iron, plus copper and molybdenum) that has a very high magnetic permeability. Other formulations of Mu-metal may also be employed within the scope of the disclosure. As illustrated, second Mu-metal electrode 112 surrounds first Mu-metal electrode 110. In one embodiment, first Mu-metal electrode 110 is substantially circular, and second Mu-metal electrode 112 is substantially O-shaped. However, the disclosure is not limited to circular or O-shaped electrodes. First and second Mu- metal electrodes 110, 112 may be substantially coaxial.
  • Although a variety of dimensions may be employed, in one embodiment, electrode system 100 is sized so as to accommodate a 300 mm wafer 120 (FIG.2). In this case, first Mu-metal electrode 110 may have a diameter D1 of approximately 1.8 inches to approximately 2.2 inches, and preferably approximately 2 inches, with “approximately” in the range of ±0.1 inches. Second Mu-metal electrode 112 may have an inner diameter D2 of approximately 3.8 inches to approximately 4.2 inches and an outer diameter D3 of approximately 4.8 inches to approximately 5.2 inches, with “approximately” in the range of ±0.1 inches.
  • Electrode system 100 is less susceptible to wafer orientation and part-to-part variation and exhibits improved signal amplitude, i.e., it is less sensitive to noise. As a result, electrode system 100 provides improved processing, reduced cycle time and less chemical usage.
  • FIG. 2 shows one embodiment of an etch station 200 according to one embodiment of the disclosure. Etch station 200 includes a wet etchant bath 104, which may include any wet etching liquid now known or later developed. End station 200 includes an end point detection electrode system 100, as described above. As understood, end station 200 may also include any now known or later developed system(s) 130, 132 for monitoring an electrical characteristic between first Mu-metal electrode 110 and second Mu-metal electrode 112 and for controlling the etching process based on the monitoring. Systems 130, 132 may include, for example, computerized analysis systems to determine factors such as end point detection, etch rate, average etch rate, etc., and/or robotic controllers to control movement and etching of wafer 120 and/or electrode system 100.
  • The systems and etch stations as described above are used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
  • The foregoing description of various aspects of the disclosure has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure to the precise form disclosed, and obviously, many modifications and variations are possible. Such modifications and variations that may be apparent to a person skilled in the art are intended to be included within the scope of the disclosure as defined by the accompanying claims.

Claims (6)

1. An end point detection electrode system comprising:
an insulative mount;
a first Mu-metal electrode coupled to the insulative mount; and
a second Mu-metal electrode coupled to the insulative mount, the second Mu-metal electrode surrounding the first Mu-metal electrode.
2. The system of claim 1, wherein the insulative mount includes polyvinyl chloride (PVC).
3. The system of claim 1, wherein the first Mu-metal electrode is substantially circular, and the second Mu-metal electrode is substantially O-shaped.
4. The system of claim 3, wherein the first Mu-metal electrode has a diameter of approximately 1.8 inches to approximately 2.2 inches, and the second Mu-metal electrode has an inner diameter of approximately 3.8 inches to approximately 4.2 inches and an outer diameter of approximately 4.8 inches to approximately 5.2 inches.
5. The system of claim 1, wherein the first and second Mu-metal electrodes are substantially coaxial.
6. An etch station comprising:
a wet etchant bath;
an end point detection electrode system including:
an insulative mount, a first Mu-metal electrode coupled to the insulative mount, and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode; and
means for monitoring an electrical characteristic between the first Mu-metal electrode and the second Mu-metal electrode and controlling the etching process based on the monitoring.
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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338390A (en) * 1992-12-04 1994-08-16 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching process
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5451289A (en) * 1994-06-30 1995-09-19 International Business Machines Corporation Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5516399A (en) * 1994-06-30 1996-05-14 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US6251238B1 (en) * 1999-07-07 2001-06-26 Technic Inc. Anode having separately excitable sections to compensate for non-uniform plating deposition across the surface of a wafer due to seed layer resistance
US6468617B1 (en) * 1993-07-20 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6843880B2 (en) * 2002-05-24 2005-01-18 International Business Machines Corporation Enhanced endpoint detection for wet etch process control
US7357850B2 (en) * 1998-07-10 2008-04-15 Semitool, Inc. Electroplating apparatus with segmented anode array

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338390A (en) * 1992-12-04 1994-08-16 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching process
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US6468617B1 (en) * 1993-07-20 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5451289A (en) * 1994-06-30 1995-09-19 International Business Machines Corporation Fixture for in-situ noncontact monitoring of wet chemical etching with passive wafer restraint
US5456788A (en) * 1994-06-30 1995-10-10 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5516399A (en) * 1994-06-30 1996-05-14 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching
US7357850B2 (en) * 1998-07-10 2008-04-15 Semitool, Inc. Electroplating apparatus with segmented anode array
US6251238B1 (en) * 1999-07-07 2001-06-26 Technic Inc. Anode having separately excitable sections to compensate for non-uniform plating deposition across the surface of a wafer due to seed layer resistance
US6843880B2 (en) * 2002-05-24 2005-01-18 International Business Machines Corporation Enhanced endpoint detection for wet etch process control

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