US20090011527A1 - Producing a surface-mountable radiation emitting component - Google Patents
Producing a surface-mountable radiation emitting component Download PDFInfo
- Publication number
- US20090011527A1 US20090011527A1 US12/211,256 US21125608A US2009011527A1 US 20090011527 A1 US20090011527 A1 US 20090011527A1 US 21125608 A US21125608 A US 21125608A US 2009011527 A1 US2009011527 A1 US 2009011527A1
- Authority
- US
- United States
- Prior art keywords
- molding material
- leadframe
- conversion material
- resin
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
- H05K3/3426—Leaded components characterised by the leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- WO 98/12757 describes a wavelength-converting potting compound for an electroluminescent component having a body which emits ultraviolet, blue or green light and is based on a transparent epoxy resin and to which a phosphor, in particular an inorganic luminescent pigment powder comprising luminescent pigments from the group consisting of the phosphors, has been added.
- a preferred embodiment described is a white light source wherein a radiation-emitting semiconductor LED based on GaAlN, having an emission maximum between 420 nm and 460 nm, is used together with a phosphor which is chosen so that a blue radiation emitted by the semiconductor body is converted into complementary wavelength ranges, in particular blue and yellow, or into additive color triplets, e.g.
- published international application WO 98/54929 discloses a semiconductor element emitting visible light and having a UV/blue LED which is arranged in a depression in a support body whose surface has a light-reflecting layer and is filled with a transparent material which surrounds the LED on its light exit sides.
- the transparent material has a refractive index which is lower than the refractive index of the optically active region of the LED.
- a pre-housed component is first produced by surrounding a prefabricated leadframe with a suitable plastics material by injection molding.
- the plastics material forms the housing of the component.
- the component has, at the top, a depression into which leadframe connections are introduced from two opposite sides, onto one of which connections a semiconductor LED is adhesively bonded and electrically contacted.
- a potting compound to which the phosphor has been added, as a rule a transparent epoxy resin, is then introduced into this depression.
- a molding material encasing the leadframe and the radiation-emitting chip and having a shape defining a mounting surface of the component, the mounting surface extending at a first predetermined angle relative to a main emission direction of the component;
- a method for producing a surface-mountable, radiation-emitting component comprising the following steps:
- the radiation-emitting chip may be a light-emitting diode chip such as, for example, a semiconductor LED or a semiconductor laser. Preferably, this chip emits electromagnetic radiation in the ultraviolet or blue spectral range.
- the main emission direction may also be arranged perpendicular to the mounting surface so that the first predetermined angle is 90°.
- a similar configuration having a first predetermined angle between 70° and 90° is likewise possible.
- a parallel or approximately parallel configuration of the connection surfaces of the leadframe relative to the mounting surfaces with a second predetermined angle between O° and 20° is advantageous. Said angle ranges do not of course restrict the invention.
- a further advantage of a component which has a radiation-emitting chip mounted on a leadframe and is surrounded by a molding material is a very compact design and very little space requirement of the component in combination with good heat removal. Very tightly packed modules with a multiplicity of such components can thus be realized with such components.
- the molding material is preferably resin-based, in particular formed from a prereacted resin.
- the molding material is particularly preferably prepared by mixing and blending a radiation-permeable plastics compression molding material with a conversion material.
- passages or lateral recesses are provided in the leadframe. These passages or recesses are filled by the plastics compression molding material, resulting in mechanically stable anchoring of the leadframe in the plastics compression molding material.
- the component has a top surface parallel to the mounting surface. This permits the use of the component in so-called pick & place processes, preferably in combination with automatic equipping apparatuses.
- the component is sucked on a surface by a suction arm, transported to its intended equipping location and mounted there. This requires as a rule parallel and flat suction and mounting surfaces.
- An advantageous further development of the invention comprises shaping the covering in such a way that the component is bounded in the emission direction by a curved surface.
- the covering thus simultaneously performs the function of an optical element, for example of a lens.
- an optical element for example of a lens.
- both focusing and extension of the emission characteristic can be achieved.
- the invention is suitable as a white light source or as a colored light source, it being possible for color location and color saturation to be freely established within wide limits when suitable conversion materials are used. Owing to a certain proportion of white light, the optical impression of an unsaturated emission color may be evoked in the case of a colored light source.
- the invention is not restricted to the visible optical spectral range.
- the radiation-emitting chip and/or the conversion element can also be provided for ultraviolet or infrared radiation emission.
- mixed-“color” infrared or ultraviolet radiation i.e. infrared or ultraviolet radiation having two or more spectral components, can be produced.
- the component advantageously dispenses with the formation of a depression and the use of two different materials and instead envisages the use of a single transparent molding material which is optionally first mixed with the conversion material and then shaped, preferably injection molded, around the leadframe.
- the cured molding material thus simultaneously serves as a component housing and as a transparent conversion material matrix.
- the production process is considerably simplified since the housing is formed in a single shaping process, in particular an injection molding process.
- the molding material may serve as the matrix for the conversion material.
- a component is produced which has improved stability properties since the problem of adhesion between two surrounding materials, such as, for example, a basic housing body and an encapsulation, which moreover, may have different coefficients of thermal expansion, no longer occurs.
- the color locations are established in a reproducible and specific manner within narrow limits by virtue of the fact that the sedimentation of the conversion materials during storage and processing, in particular through rapid curing steps, is very substantially ruled out.
- the quality of the conversion materials is increased by simple process steps with simpler metering possibilities in the resin preparation, mixing and metering.
- the plastics compression molding material as a starting material, may be a commercially available compression molding material and substantially comprises, for example, an epoxy-cresol novolak or conventional epoxy resin systems with an anhydride or a conventional phenol curing system.
- the conversion material dispersed in the plastics compression molding material may be an inorganic luminescent pigment powder which contains phosphors of the general formula A 3 B 5 X 12 :M.
- particles from the group consisting of the Ce-doped garnets may be used as luminescent pigments, Ce-doped yttrium aluminum garnet (Y 3 Al 5 O 12 Ce) being mentioned in particular.
- Further possible phosphors are sulfide- and oxysulfide-based host lattices, aluminates, borates, etc., having metal centers appropriately excitable in the short-wave range. Organometallic phosphor systems may also be used.
- the luminescent pigments may also contain a plurality of different phosphors and the conversion material may contain a plurality of different luminescent pigments.
- the phosphor can also be formed by soluble and sparingly soluble organic dyes and phosphor mixtures.
- an adhesion promoter preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material.
- an adhesion promoter preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material.
- 3-glycidyloxypropyltrimethoxysilane or further derivatives based on trialkoxysilane can be used as adhesion promoters.
- Monofunctional and polyfunctional polar agents having carboxyl, carboxylic ester, ether and alcohol groups can be used for modifying the phosphor surfaces. This improves the wettability of the high-energy phosphor surfaces and hence the compatibility and dispersing during the processing with the molding material.
- a mold release agent or lubricant can be mixed with the plastics compression molding material before the mixing with the conversion material.
- Such mold release agents facilitate the removal of the cured molding material from the mold.
- a solid wax-based mold release agent or a metal soap with long-chain carboxylic acids, in particular stearates, can be used as such a mold release agent.
- glass particles are added to the molding material as a filler.
- the glass transition temperature T, of the molding material is thus increased.
- the glass transition temperature of the molding material limits the temperature range permissible for the component since exceeding the glass transition temperature may lead to flow of the molding material and consequently to stresses and defects in the radiation-emitting chip and wire connections attached thereto.
- the addition of glass particles to the molding material advantageously increases the temperature range permissible for the component.
- the component can be operated at a higher operating current and more radiation can be produced.
- a further advantage is a reduction of the coefficient of thermal expansion of the molding material, which coefficient is therefore better adapted to the coefficient of thermal expansion of the leadframe, so that the thermal stability of the component is further increased.
- the mean particle size of the glass particles is preferably less than 100 ⁇ m, particularly preferably less than 50 ⁇ m. Inter alia, the risk of blockage of the often narrow feed channels of an injection mold is thus reduced.
- FIG. 1 is a schematic sectional view of a first embodiment of a component according to the invention
- the mounting surface is parallel to the plane of the section.
- the leadframe 10 is flat throughout and is approximately perpendicular to the mounting surface so that the second predetermined angle is about 90° within the manufacturing tolerances.
- the leadframe connections 11 , 12 project, in a main extension direction of the mounting plane 13 determined by the mounting surface 6 , out of the covering of the component and extend, a distance away from the covering, in the direction of the mounting plane 13 .
- the positioning of the component is thus determined solely by the mounting surface 6 , with the result that mechanical stresses between leadframe 10 and covering are avoided.
- the slight distance of the leadframe connections 11 , 12 from the mounting plane 13 reduces the risk that the leadframe connections 11 , 12 , which project beyond the mounting plane 13 , for example owing to manufacturing tolerances in the encapsulation with molding material, lead to bending of the leadframe connections 11 , 12 or tilting of the component during mounting.
- the component is bounded by a curved surface which is partly cylindrical in the case shown, the cylinder axis being oriented approximately parallel to the longitudinal axis of the leadframe.
- the curved surface may also be formed spherically as part of a sphere surface or aspherically. Furthermore, both a convex surface and a concave surface are possible.
- the semiconductor LED 1 is preferably based on GaN, InGaN, AlGaN or AlInGaN. However, it may alternatively also be based on the material system ZnS/ZnSe or on another material system suitable for this spectral range.
- the embodiment of a component according to the invention shown in FIG. 4 , is provided with a main emission direction 7 arranged perpendicular to the mounting plane 6 .
- the first predetermined angle here is about 90°.
- the leadframe 10 has two S-shaped bends, the leadframe connections projecting laterally from the molding material 3 , and the connection surfaces of the leadframe connections being in the mounting plane 13 determined by the mounting surface 6 .
- the second predetermined angle here is thus O°.
- a radiation-emitting chip 1 in the form of a semiconductor LED is fastened, for example soldered or adhesively bonded by an electrically conductive bond, on one part of the two-part leadframe 10 .
- a wire connection 2 is led to the other part of the leadframe.
- leadframe 10 and semiconductor LED are surrounded by a radiation-permeable molding material comprising conversion material.
- a transparent plastics compression molding material 3 is injection-molded onto the leadframe connections 11 and 12 in a suitable injection-molding apparatus.
- a multiplicity of leadframes each having radiation-emitting chips mounted thereon, can also be encapsulated in a cohesive covering and subsequently divided into individual components, for example by breaking, sawing or a laser cutting method by means of a water jet.
- the prefabrication of the leadframe 10 and the surrounding by injection molding with the molding material consisting of the plastics compression molding material 3 , the phosphor particles 4 and optionally further fillers are effected in such a way that the leadframe sections 11 and 12 are led horizontally out of the molding material.
- the finished component can be soldered to a circuit board at the connection surfaces of the leadframe connections 11 and 12 , which connection surfaces are perpendicular to the mounting surface.
- a component suitable for SMT (surface mounting technology) is thus produced.
- Nitto NT 360-10.000 (with internal mold release agent)
- compression molding materials in rod or tablet form facilitates the metering and increases the accuracy thereof compared with a compression molding material present in powder form.
- a compression molding material present in the form of a powder or in another modification can of course also be used in the invention.
- a compression molding material present in the form of a powder could also first be brought into rod or tablet form for more exact metering and then be further processed.
- phosphors which are described in the above-mentioned international publications WO 97/50132 and WO 98/12757 may be present as conversion materials.
- an inorganic luminescent pigment powder comprising phosphors having the general formula A 3 B 5 X 12 :M can be used. These are, for example, garnets doped with rare earths, in particular Ce.
- A′ 3 B′ 5 O 12 :M′ have proven to be efficient phosphors (provided that they are not unstable under the customary production and operating conditions).
- A′ is at least one element from the group consisting of Y, Lu, Sc, La, Gd, Tb and Sm
- B′ is at least one element from the group consisting of Al, Ga and In
- M′ is at least one element from the group consisting of Ce and Pr, preferably Ce.
- Al can be at least partly replaced by Ga or In. Said phosphors are to be understood by way of example and not as restricting the general formula A 3 B 5 X 12 :M.
- the conversion properties can be further improved by removing the dust fraction, i.e. for example particles having a particle diameter of less than 2 ⁇ m, preferably less than 1 ⁇ m, from the phosphor powder.
- the dust fraction i.e. for example particles having a particle diameter of less than 2 ⁇ m, preferably less than 1 ⁇ m
- the pure transmission at a wavelength of 500 nm in the case of a typical plastics matrix having a thickness of 400 ⁇ m and a phosphor concentration of 3.5% by weight with a mean phosphor particle size of 2 ⁇ m is an order of magnitude of 1,000 greater than for a particle size of 1 ⁇ m and further increases sharply with increasing particle size. For shorter wavelengths, particle sizes of 1 ⁇ m or less have a greater effect.
- an adhesion promoter such as 3-glycidyloxy-propyltrimethoxysilane, for example having the product designation A-187 from Hüls AG, can also be used.
- This adhesion promoter can be added to the phosphor in concentrations of up to 3% by weight directly after the drying process and can be mixed therewith overnight at room temperature.
- the method according to the invention has been described on the basis of an SMD (surfacemounted design), but it can also be realized in the case of a so-called radial diode.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
- This application is a divisional of U.S. patent application Ser. No. 10/747,703, filed Dec. 29, 2003, which is a continuation of International Application No. PCT/DE02/01514, filed Apr. 25, 2002, which claims the benefit of priority under 35 U.S.C. § 119 of German Patent Application No. DE 101 31 698.4, filed Jun. 29, 2001. The disclosure of each prior application is incorporated herein by reference.
- The invention relates to a surface-mountable radiation-emitting component and a process for its production.
- German published patent application DE 38 04 293 discloses a white light source based on a semiconductor LED. Described therein is a configuration which has electroluminescence or a laser diode and wherein the emission spectrum emitted by the diode is shifted toward greater wavelengths by means of a plastics element to which a phosphorescent, light-converting organic dye has been added. The light emitted by the configuration thus has a color differing from that of the light emitted by the light-emitting diode. Depending on the type of dye added in the plastic, light-emitting diode configurations which luminesce in different colors can be produced using one and the same light-emitting diode type.
- WO 98/12757 describes a wavelength-converting potting compound for an electroluminescent component having a body which emits ultraviolet, blue or green light and is based on a transparent epoxy resin and to which a phosphor, in particular an inorganic luminescent pigment powder comprising luminescent pigments from the group consisting of the phosphors, has been added. A preferred embodiment described is a white light source wherein a radiation-emitting semiconductor LED based on GaAlN, having an emission maximum between 420 nm and 460 nm, is used together with a phosphor which is chosen so that a blue radiation emitted by the semiconductor body is converted into complementary wavelength ranges, in particular blue and yellow, or into additive color triplets, e.g. blue, green and red. Here, the yellow or the green and the red light is 20 produced by the phosphors. The hue (hue in the CIE color table) of white light produced in this manner can be varied by a suitable choice of the phosphor or phosphors with regard to mixing and concentration.
- Similarly, published international application WO 98/54929 discloses a semiconductor element emitting visible light and having a UV/blue LED which is arranged in a depression in a support body whose surface has a light-reflecting layer and is filled with a transparent material which surrounds the LED on its light exit sides. For improving the light output, the transparent material has a refractive index which is lower than the refractive index of the optically active region of the LED.
- In these prior art designs, a pre-housed component is first produced by surrounding a prefabricated leadframe with a suitable plastics material by injection molding. The plastics material forms the housing of the component. The component has, at the top, a depression into which leadframe connections are introduced from two opposite sides, onto one of which connections a semiconductor LED is adhesively bonded and electrically contacted. A potting compound to which the phosphor has been added, as a rule a transparent epoxy resin, is then introduced into this depression.
- The advantage of the prior designs is that very directed emission can be achieved by virtue of the fact that the side walls formed by the plastics housing can be in the form of inclined reflectors. In the applications wherein, however, such directed emission is not absolutely essential or is achievable in another way, the production process is relatively complicated and multistage, since the housing plastic and potting compound are formed from two different materials and have to be shaped in separate process steps. In addition, the problem of sufficient and thermally stable adhesion between the potting compound and the housing plastic always has to be solved. In practice, this constantly leads to problems, particularly with the use of high light powers.
- In many potential applications for light-emitting diodes, such as, for example, in display elements in the automobile dashboard area, lighting in aircraft and automobiles and in full-color LED displays, there is increasingly a need for light-emitting diode configurations by means of which multicolored light, in particular white light, can be produced. As large an area of the color space as possible should be covered with regard to the color of the light produced. There is often a need for lighting and display elements which emit light having an exactly predetermined color location and an exactly predetermined color saturation.
- It is accordingly an object of the invention to provide a surface-mountable radiation emitter component and a corresponding production method which overcome the abovementioned disadvantages of the heretofore-known devices and methods of this general type.
- With the foregoing and other objects in view there is provided, in accordance with the invention, a surface-mountable radiation-emitting component with a commonly encased leadframe and a radiation-emitting chip. The component comprises:
- a leadframe and a radiation-emitting chip mounted on the leadframe;
- a molding material encasing the leadframe and the radiation-emitting chip and having a shape defining a mounting surface of the component, the mounting surface extending at a first predetermined angle relative to a main emission direction of the component;
- the leadframe having leadframe connections protruding out of the molding material and having connection surfaces enclosing a second predetermined angle with the mounting surface.
- With the above and other objects in view there is also provided, in accordance with the invention, a method for producing a surface-mountable, radiation-emitting component, the method which comprises the following steps:
- mounting a radiation-emitting chip on a leadframe;
- preparing a molding material from a resin powder prereacted with curing agent, and optionally added further fillers; and
- encasing the leadframe and the radiation-emitting chip with the molding material.
- Accordingly, the invention describes a surface-mountable radiation-emitting component having a radiation-emitting chip which is mounted on a leadframe, the leadframe and the radiation-emitting chip being surrounded by a molding material which is shaped in such a way that the component has a mounting surface which is arranged at a first predetermined angle relative to a main emission direction of the component. The leadframe has leadframe connections which lead out from the molding material and have connection surfaces which are arranged at a second predetermined angle relative to the mounting surface.
- The radiation-emitting chip may be a light-emitting diode chip such as, for example, a semiconductor LED or a semiconductor laser. Preferably, this chip emits electromagnetic radiation in the ultraviolet or blue spectral range.
- In a preferred embodiment of the invention, the main emission direction and the mounting surface are arranged parallel so that the first angle is O°. The component is in the form of a so-called lateral emitter which emits predominantly parallel to the mounting surface or, in the installed state, to a support plate, for example a circuit board, on which the component is fastened. Such an emission characteristic is advantageous, particularly for lateral light input into a display to be illuminated, for example an LCD display, and permits a very flat design. The leadframe is preferably arranged so that the connection surfaces of the leadframe connections are perpendicular to the mounting surface or are arranged at approximately a right angle to the mounting surface, so that the second predetermined angle is 90° or, for example, is between 70° and 90°. Furthermore, the first predetermined angle may also be, for example, between O° and 20°, so that the component emits laterally without the main emission direction being oriented parallel to the mounting surface.
- Alternatively, the main emission direction may also be arranged perpendicular to the mounting surface so that the first predetermined angle is 90°. A similar configuration having a first predetermined angle between 70° and 90° is likewise possible. In this case, a parallel or approximately parallel configuration of the connection surfaces of the leadframe relative to the mounting surfaces with a second predetermined angle between O° and 20° is advantageous. Said angle ranges do not of course restrict the invention.
- A further advantage of a component which has a radiation-emitting chip mounted on a leadframe and is surrounded by a molding material is a very compact design and very little space requirement of the component in combination with good heat removal. Very tightly packed modules with a multiplicity of such components can thus be realized with such components.
- The molding material is preferably resin-based, in particular formed from a prereacted resin. The molding material is particularly preferably prepared by mixing and blending a radiation-permeable plastics compression molding material with a conversion material.
- In a preferred embodiment, the leadframe connections led out laterally extend up to the mounting plane determined by the mounting surface or to the vicinity thereof. This ensures that a support plate having corresponding conductor track structures can simultaneously serve for electric supply to the component. The leadframe connections may also end a slight distance away from the mounting plane. Contact points produced on the support plate, for example solder contact surfaces, are as a rule slightly dome-shaped and thus compensate the distance between the leadframe connections and a support plate.
- Preferably, the leadframe as a whole is flat. This simplifies the production since no additional bends have to be made. In addition, mechanical stresses which might occur as a result of such bends are avoided. Furthermore, a flat leadframe is a planar, exactly defined mounting platform for mounting the radiation-emitting chip. This facilitates the automatic equipping and contacting with these chips. In particular, the optical recognition and control systems used for this may be confused by non-plane-parallel mounting surfaces, as may occur in prebent leadframes, for example as a result of bending tolerances. This leads to malfunctions, which are reduced in the case of flat leadframes.
- Furthermore, it is advantageous to provide passages or lateral recesses in the leadframe. These passages or recesses are filled by the plastics compression molding material, resulting in mechanically stable anchoring of the leadframe in the plastics compression molding material.
- In a particularly preferred embodiment, the component has a top surface parallel to the mounting surface. This permits the use of the component in so-called pick & place processes, preferably in combination with automatic equipping apparatuses. The component is sucked on a surface by a suction arm, transported to its intended equipping location and mounted there. This requires as a rule parallel and flat suction and mounting surfaces.
- An advantageous further development of the invention comprises shaping the covering in such a way that the component is bounded in the emission direction by a curved surface. The covering thus simultaneously performs the function of an optical element, for example of a lens. Depending on the curvature and direction of curvature, both focusing and extension of the emission characteristic can be achieved. Depending on the matching of the conversion material with the radiation produced by the radiation-emitting chip, the invention is suitable as a white light source or as a colored light source, it being possible for color location and color saturation to be freely established within wide limits when suitable conversion materials are used. Owing to a certain proportion of white light, the optical impression of an unsaturated emission color may be evoked in the case of a colored light source.
- However, the invention is not restricted to the visible optical spectral range. The radiation-emitting chip and/or the conversion element can also be provided for ultraviolet or infrared radiation emission. Thus, for example, mixed-“color” infrared or ultraviolet radiation, i.e. infrared or ultraviolet radiation having two or more spectral components, can be produced.
- With regard to shaping, the component advantageously dispenses with the formation of a depression and the use of two different materials and instead envisages the use of a single transparent molding material which is optionally first mixed with the conversion material and then shaped, preferably injection molded, around the leadframe. The cured molding material thus simultaneously serves as a component housing and as a transparent conversion material matrix. Thus, on the one hand, the production process is considerably simplified since the housing is formed in a single shaping process, in particular an injection molding process. At the same time, the molding material may serve as the matrix for the conversion material.
- Furthermore, a component is produced which has improved stability properties since the problem of adhesion between two surrounding materials, such as, for example, a basic housing body and an encapsulation, which moreover, may have different coefficients of thermal expansion, no longer occurs.
- The color locations are established in a reproducible and specific manner within narrow limits by virtue of the fact that the sedimentation of the conversion materials during storage and processing, in particular through rapid curing steps, is very substantially ruled out. The quality of the conversion materials is increased by simple process steps with simpler metering possibilities in the resin preparation, mixing and metering.
- The use of only a single material for the housing form and the conversion material matrix results in latitude for further miniaturization. This additional miniaturization potential can be utilized for the use of these components in mobile electronic product systems, for example as a white light source. Increased light yields through greater utilization of the lateral emission in special installation situations with further degrees of freedom of design or straightforward lateral light output possibilities extend the functionality.
- The plastics compression molding material, as a starting material, may be a commercially available compression molding material and substantially comprises, for example, an epoxy-cresol novolak or conventional epoxy resin systems with an anhydride or a conventional phenol curing system.
- The conversion material dispersed in the plastics compression molding material may be an inorganic luminescent pigment powder which contains phosphors of the general formula A3B5X12:M. In particular, particles from the group consisting of the Ce-doped garnets may be used as luminescent pigments, Ce-doped yttrium aluminum garnet (Y3Al5O12Ce) being mentioned in particular. Further possible phosphors are sulfide- and oxysulfide-based host lattices, aluminates, borates, etc., having metal centers appropriately excitable in the short-wave range. Organometallic phosphor systems may also be used. The luminescent pigments may also contain a plurality of different phosphors and the conversion material may contain a plurality of different luminescent pigments.
- The phosphor can also be formed by soluble and sparingly soluble organic dyes and phosphor mixtures.
- Furthermore, an adhesion promoter, preferably in liquid form, can be mixed with the preferably predried conversion material in order to improve the adhesion of the conversion material with the plastics compression molding material. Particularly when inorganic luminescent pigments are used, 3-glycidyloxypropyltrimethoxysilane or further derivatives based on trialkoxysilane can be used as adhesion promoters.
- Monofunctional and polyfunctional polar agents having carboxyl, carboxylic ester, ether and alcohol groups, such as, for example, diethylene glycol monomethyl ether, can be used for modifying the phosphor surfaces. This improves the wettability of the high-energy phosphor surfaces and hence the compatibility and dispersing during the processing with the molding material.
- Furthermore, a mold release agent or lubricant can be mixed with the plastics compression molding material before the mixing with the conversion material. Such mold release agents facilitate the removal of the cured molding material from the mold. A solid wax-based mold release agent or a metal soap with long-chain carboxylic acids, in particular stearates, can be used as such a mold release agent.
- For example, inorganic fillers, by means of which the refractive index of the molding material can be increased, may be admixed as further fillers, with the result that the light yield of the component can be increased. For example, TiO2, ZrO2, α-Al2O3 or another metal oxide may be used as such fillers.
- In an advantageous embodiment of the invention, glass particles, so-called glass fillers, are added to the molding material as a filler. The glass transition temperature T, of the molding material is thus increased. The glass transition temperature of the molding material limits the temperature range permissible for the component since exceeding the glass transition temperature may lead to flow of the molding material and consequently to stresses and defects in the radiation-emitting chip and wire connections attached thereto. The addition of glass particles to the molding material advantageously increases the temperature range permissible for the component. Furthermore, the component can be operated at a higher operating current and more radiation can be produced. A further advantage is a reduction of the coefficient of thermal expansion of the molding material, which coefficient is therefore better adapted to the coefficient of thermal expansion of the leadframe, so that the thermal stability of the component is further increased.
- As a result of the addition of glass particles, the refractive index of the molding material is furthermore increased so that the refractive index jump between the radiation-emitting chip and the molding material is smaller and advantageously the radiation output is greater.
- Finally, the water absorption of the molding material is reduced by the addition of glass particles. This advantageously leads to an improved thermal load capacity of the component. In particular, the risk of damage to or of bursting of the component during soldering in, owing to an excessively high water content (so-called popcorn effect), is advantageously reduced.
- The mean particle size of the glass particles is preferably less than 100 μm, particularly preferably less than 50 μm. Inter alia, the risk of blockage of the often narrow feed channels of an injection mold is thus reduced.
- The proportion of glass particles in the molding material may be 90% by weight or more and is preferably between 10% by weight and 50% by weight. In the last-mentioned range, the molding material is distinguished both by high transparency and by a high. glass transition temperature.
- Preferably, the conversion material and optionally the further fillers are mixed by first mixing them coarsely and then milling the mixture in a mill, with the result that a very fine, homogeneous powder is obtained.
- The mixed molding material may therefore contain the following constituents (in % by weight):
-
- a) plastics compression molding material ≧60%
- b) conversion material >0 and ≦40%
- C) adhesion promoter ≧0 and ≦3%
- d) mold release agent ≧0 and ≦2%
- e) surface modifier ≧2 0 and ≦5%
- f) antioxidant ≧0 and ≦5% (e.g. based on phosphite or based on sterically hindered phenols)
- g) UV light stabilizer ≧0 and ≦2%
- h) glass particles ≧0 and ≦80%.
- Other features which are considered as characteristic for the invention are set forth in the appended claims.
- Although the invention is illustrated and described herein as embodied in a surface-mountable radiation-emitting component and process for its production, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims.
- The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
-
FIG. 1 is a schematic sectional view of a first embodiment of a component according to the invention; -
FIG. 2 is a schematic sectional view of a second embodiment of a component according to the invention; -
FIG. 3 is a schematic perspective view of a third embodiment of a component according to the invention; and -
FIG. 4 is a schematic perspective view of a fourth embodiment of a component according to the invention. - Referring now to the figures of the drawing in detail and first, particularly, to
FIG. 1 thereof, there is shown an embodiment of a component according to the invention in a cross section that is taken along a longitudinal axis of aleadframe 10. - In an originally one-piece and
cohesive leadframe 10, twoleadframe connections - On one
leadframe connection 12, a completely processed semiconductor LED 1 having an electrically conductive connecting means, such as conductive silver or the like, is adhesively bonded or soldered on the inside end section of the leadframe connection, so that the n-side or p-side of the semiconductor LED 1 is connected to theleadframe terminal 12. The opposite p-conducting or n-conducting contact side is connected by a bond wire 2 to the end section of theother leadframe connection 11. - The component is surrounded by a plastics
compression molding material 3, into which aconversion material 4 in the form of phosphor particles can preferably be introduced. This will be explained in more detail below. - In the illustrated component, the mounting surface is parallel to the plane of the section. The
leadframe 10 is flat throughout and is approximately perpendicular to the mounting surface so that the second predetermined angle is about 90° within the manufacturing tolerances. - This design permits both economical manufacture of the leadframe, for example by punching out of a metal sheet or of a foil without additional bends, and a very small space requirement of the component. The emission takes place predominantly perpendicular to the
leadframe 10, so that a main emission direction 7 is approximately parallel to the mounting surface, and the first predetermined angle is O° within the manufacturing tolerances. -
FIG. 2 shows a schematic sectional view of a further embodiment of a component according to the invention. The plane of the section is once again along a longitudinal axis of theleadframe 10. and is oriented perpendicular to the plane of the section chosen inFIG. 1 . - Here, the
leadframe 10 has lateral recesses 5. Theserecesses 5 are filled with the surrounding plastics compression molding material, thus forming a type of toothed system between theleadframe 10 and the covering. This toothed system ensures mechanically stable anchoring of the leadframe in the covering. For this purpose, it would also be possible to form non-illustrated passages in theleadframe 10. - The
leadframe connections plane 13 determined by the mountingsurface 6, out of the covering of the component and extend, a distance away from the covering, in the direction of the mountingplane 13. A small gap which is bridged during contacting, for example by solder contacts, is formed between the mountingplane 13 and theleadframe connections surface 6, with the result that mechanical stresses betweenleadframe 10 and covering are avoided. Furthermore, the slight distance of theleadframe connections plane 13 reduces the risk that theleadframe connections plane 13, for example owing to manufacturing tolerances in the encapsulation with molding material, lead to bending of theleadframe connections -
FIG. 3 shows a perspective view of a further embodiment of a component according to the invention on asupport 8, for example a circuit board. The emission takes place substantially parallel to the main surface of the support, on which the component rests with the mountingsurface 6. On either side of the leadframe connections, the component is bounded byinclined surfaces - In the emission direction 7, the component is bounded by a curved surface which is partly cylindrical in the case shown, the cylinder axis being oriented approximately parallel to the longitudinal axis of the leadframe. The curved surface may also be formed spherically as part of a sphere surface or aspherically. Furthermore, both a convex surface and a concave surface are possible.
- As a result of this shape, a lens effect and hence focusing of the emitted radiation are achieved.
- In the embodiment, the semiconductor LED 1 has an emission spectrum which is in the ultraviolet or blue spectral range. For the production of mixed-color or white light, an emission of the semiconductor LED in the ultraviolet or blue spectral range is particularly advantageous since conversion to longer wavelengths is as a rule substantially more efficient than a conversion from longer to shorter wavelengths. Since the ultraviolet or blue spectral range is at the short wave end of the optically visible range, efficient conversion to a majority of the visible wavelengths is possible from there by means of suitable conversion materials.
- The semiconductor LED 1 is preferably based on GaN, InGaN, AlGaN or AlInGaN. However, it may alternatively also be based on the material system ZnS/ZnSe or on another material system suitable for this spectral range.
- In contrast to the embodiments described so far, the embodiment of a component according to the invention, shown in
FIG. 4 , is provided with a main emission direction 7 arranged perpendicular to the mountingplane 6. The first predetermined angle here is about 90°. Theleadframe 10 has two S-shaped bends, the leadframe connections projecting laterally from themolding material 3, and the connection surfaces of the leadframe connections being in the mountingplane 13 determined by the mountingsurface 6. The second predetermined angle here is thus O°. - A radiation-emitting chip 1 in the form of a semiconductor LED is fastened, for example soldered or adhesively bonded by an electrically conductive bond, on one part of the two-
part leadframe 10. A wire connection 2 is led to the other part of the leadframe. As in the other embodiments,leadframe 10 and semiconductor LED are surrounded by a radiation-permeable molding material comprising conversion material. - In an embodiment of the production method according to the invention, after mounting and contacting of the semiconductor LED 1, a transparent plastics
compression molding material 3 is injection-molded onto theleadframe connections - Preferably, the leadframe with the semiconductor LED is surrounded with the plastics compression molding material by molding by means of an injection molding or injection compression molding process. For this purpose, a subregion of the
leadframe 10 with premounted semiconductor LED 1 is introduced into an injection mold, and the plasticsinjection molding material 3 is liquefied and is injected into the injection mold. It is advantageous to preheat the leadframe (10) prior to the injection molding. - In a variant of this process, a multiplicity of leadframes, each having radiation-emitting chips mounted thereon, can also be encapsulated in a cohesive covering and subsequently divided into individual components, for example by breaking, sawing or a laser cutting method by means of a water jet.
- Phosphor particles which consist of a phosphor by means of which at least partial wavelength conversion of the light radiation emitted by the semiconductor LED 1 is brought about are embedded as
conversion material 4 in this plasticscompression molding material 3. This wavelength conversion produces an emission spectrum which gives the optical impression of multi-colored light or white light. - The prefabrication of the
leadframe 10 and the surrounding by injection molding with the molding material consisting of the plasticscompression molding material 3, thephosphor particles 4 and optionally further fillers are effected in such a way that theleadframe sections - The finished component can be soldered to a circuit board at the connection surfaces of the
leadframe connections - The preparation of the molding material formed by the plastics
compression molding material 3, thephosphor particles - Prereacted, storage-stable and radiation-stable transparent compression molding materials which comprise commercial epoxy-cresol novolaks with phenolic curing agents and whose total chlorine content is below 1500 ppm can be used as starting materials for the plastics compression molding material. Preferably, these compression molding materials contain an internal mold release agent or lubricant, which facilitates the removal of the cured molding material from the injection mold. The presence of such an internal mold release agent is, however, not absolutely essential. For example, the following commercially available compression molding materials from Nitto and Sumitomo may therefore be used:
- Nitto NT-600 (without internal mold release agent)
- Nitto NT-300H-10.000 (with internal mold release agent)
- Nitto NT.300S-10.000 (with internal mold release agent)
- Nitto NT 360-10.000 (with internal mold release agent)
- Sumitomo EME 700L (without internal mold release agent)
- These compression molding materials are supplied as standard in rod or tablet form.
- The use of compression molding materials in rod or tablet form facilitates the metering and increases the accuracy thereof compared with a compression molding material present in powder form. However, a compression molding material present in the form of a powder or in another modification can of course also be used in the invention. Furthermore, a compression molding material present in the form of a powder could also first be brought into rod or tablet form for more exact metering and then be further processed.
- All phosphors which are described in the above-mentioned international publications WO 97/50132 and WO 98/12757 may be present as conversion materials. In particular, an inorganic luminescent pigment powder comprising phosphors having the general formula A3B5X12:M can be used. These are, for example, garnets doped with rare earths, in particular Ce.
- Compounds that satisfy the formula A′3B′5O12:M′ have proven to be efficient phosphors (provided that they are not unstable under the customary production and operating conditions). Therein, A′ is at least one element from the group consisting of Y, Lu, Sc, La, Gd, Tb and Sm; B′ is at least one element from the group consisting of Al, Ga and In; and M′ is at least one element from the group consisting of Ce and Pr, preferably Ce. The compounds YAG:Ce (Y3Al5O12:Ce), TAG:Ce (Tb3Al5O12:Ce), TbYAG:Ce ((TbxY1−x)3 Al5O12:Ce, 0≦x≦1), GdYAG:Ce ((GdxY1−x)3Al5O12:Ce3+, 0≦x≦1) and GdTbYAG:Ce ((GdxTbyY1−x−y)3Al5O12:Ce3+, 0≦x≦1, 0≦y≦1) and mixtures based thereon have proven to be particularly efficient phosphors. Al can be at least partly replaced by Ga or In. Said phosphors are to be understood by way of example and not as restricting the general formula A3B5X12:M.
- The compounds SrS:Ce3+, Na, SrS:ce3+, Cl, SrS:CeCl3, CaS:Ce3+ and SrS:Ce3+ are furthermore suitable as a phosphor. Moreover, sulfide- and oxysulfide-based host lattices and aluminates, borates, alkaline earth metal sulfides, thiogallates or orthosilicates, etc. having metal centers appropriately excitable in the short-wave range or organometallic phosphor systems can also be used. Furthermore, soluble or sparingly soluble organic dyes and phosphor mixtures can be used.
- Regarding the particle size of the phosphor particles, a mean particle diameter between 2 μm and 20 μm, preferably approximately between 4 μm and 10 μm, particularly preferably between 5 μm and 6 μm, is advantageous. The conversion properties can be further improved by removing the dust fraction, i.e. for example particles having a particle diameter of less than 2 μm, preferably less than 1 μm, from the phosphor powder. With decreasing particle diameter, the scatter of the radiation at the particles increases and the conversion efficiency decreases, so that it is advantageous to separate off the phosphor particles having a comparatively small particle diameter.
- Thus, for example, experiments have shown that milling the phosphor, which produces a particle size d50 of substantially less than 5 μm, results in a volume fraction of up to 30% of particles having a particle size less than 1 μm. Regardless of the difference in refractive index compared with the surrounding matrix, for example a plastics matrix, particles having a size of less than 1 μm lead to strong light scattering and thus adversely affect the transmission and the transparency of the matrix.
- According to simulation calculations, the pure transmission at a wavelength of 500 nm in the case of a typical plastics matrix having a thickness of 400 μm and a phosphor concentration of 3.5% by weight with a mean phosphor particle size of 2 μm is an order of magnitude of 1,000 greater than for a particle size of 1 μm and further increases sharply with increasing particle size. For shorter wavelengths, particle sizes of 1 μm or less have a greater effect.
- In particular, particles of the luminescent pigment YAG:Ce are distinguished by particular conversion efficiency. A conversion material based thereon is known by the product designation L175 from Osram of Germany. An experiment on mixing with a compression molding material was carried out with this conversion material, a compression molding material of the type Nitto NT-300 H1O.OOO with an internal mold release agent being used. As preparation for the experiment, the conversion material L175 was predried at 200° C. for about 8 h. Thereafter, a surface modifier having the designation diethylene glycol monomethyl ether was mixed in liquid form with the predried converter (0.1% by weight, based on weight of compression molding material). This mixture was sealed airtight in a glass vessel and left to stand overnight. Directly before processing, the conversion material was mixed with the compression molding material of the abovementioned type. The compression molding material had been milled beforehand in a mill (for example a ball mill) in powder form. The mixing ratio was 20% by weight of conversion material/DEGME mixture and 80% by weight of Nitto NT 300H-10.000. After the coarse mixing of the mixture by stirring, the mixture was thoroughly mixed and milled again in a mill (for example a ball mill) and very fine powder was thus produced.
- An injection molding experiment was then carried out with this molding material on the apparatus of the type FICO Brilliant 100. The already appropriately prefabricated
leadframes 10 were preheated at 150° C. prior to the injection molding, and the following machine parameters were set for the injection molding: -
- mold temp: 150° C.
- injection time: 22.4 s
- injection pressure: 73-82 bar (depending, inter alia, on the amount of material set)
- curing time: 120 s
- As a result, it was possible to achieve a very homogeneous, cured molding material which was distinguished by excellent freedom from bubbles and shrink holes. In general, it was found that milling of the compression molding material to very fine powder prior to mixing gave better results with regard to freedom from bubbles and shrink holes than with the use of a coarser-particled residual material powder.
- In addition, an adhesion promoter, such as 3-glycidyloxy-propyltrimethoxysilane, for example having the product designation A-187 from Hüls AG, can also be used. This adhesion promoter can be added to the phosphor in concentrations of up to 3% by weight directly after the drying process and can be mixed therewith overnight at room temperature.
- According to an embodiment, the method according to the invention has been described on the basis of an SMD (surfacemounted design), but it can also be realized in the case of a so-called radial diode.
- The explanation of the invention with reference to the embodiments described does not of course represent any restriction of the invention to these embodiments. In particular, individual features of the embodiments can also be combined in a form other than the form described. Likewise, production processes described are not restricted to surfacemountable components, laterally emitting components or components which contain a conversion material.
Claims (43)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/211,256 US20090011527A1 (en) | 2001-06-29 | 2008-09-16 | Producing a surface-mountable radiation emitting component |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10131698A DE10131698A1 (en) | 2001-06-29 | 2001-06-29 | Surface-mountable radiation-emitting component and method for its production |
DEDE10131698.4 | 2001-06-29 | ||
PCT/DE2002/001514 WO2003005458A1 (en) | 2001-06-29 | 2002-04-25 | Surface-mountable, radiation-emitting component and method for the production thereof |
US10/747,703 US7436002B2 (en) | 2001-06-29 | 2003-12-29 | Surface-mountable radiation-emitting component |
US12/211,256 US20090011527A1 (en) | 2001-06-29 | 2008-09-16 | Producing a surface-mountable radiation emitting component |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/747,703 Division US7436002B2 (en) | 2001-06-29 | 2003-12-29 | Surface-mountable radiation-emitting component |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090011527A1 true US20090011527A1 (en) | 2009-01-08 |
Family
ID=7690112
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/747,703 Expired - Fee Related US7436002B2 (en) | 2001-06-29 | 2003-12-29 | Surface-mountable radiation-emitting component |
US12/211,256 Abandoned US20090011527A1 (en) | 2001-06-29 | 2008-09-16 | Producing a surface-mountable radiation emitting component |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/747,703 Expired - Fee Related US7436002B2 (en) | 2001-06-29 | 2003-12-29 | Surface-mountable radiation-emitting component |
Country Status (7)
Country | Link |
---|---|
US (2) | US7436002B2 (en) |
EP (1) | EP1399978B1 (en) |
JP (1) | JP2004534405A (en) |
CN (2) | CN101420006B (en) |
DE (1) | DE10131698A1 (en) |
TW (1) | TWI338378B (en) |
WO (1) | WO2003005458A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080197376A1 (en) * | 2005-02-28 | 2008-08-21 | Braune Bert | Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component |
US20130001597A1 (en) * | 2011-06-28 | 2013-01-03 | Osram Sylvania Inc. | Lighting Device Having a Color Tunable Wavelength Converter |
US10340426B2 (en) * | 2017-07-06 | 2019-07-02 | Epistar Corporation | Phosphor and illumination device utilizing the same |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101556985B (en) | 2003-04-30 | 2017-06-09 | 克利公司 | High powered light emitter encapsulation with compact optical element |
DE10326755A1 (en) * | 2003-06-13 | 2006-01-26 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Discharge lamp with dual band phosphor |
US7462983B2 (en) * | 2003-06-27 | 2008-12-09 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | White light emitting device |
JP2005026302A (en) * | 2003-06-30 | 2005-01-27 | Shin Etsu Handotai Co Ltd | Luminescent module |
DE102004001312B4 (en) * | 2003-07-25 | 2010-09-30 | Seoul Semiconductor Co., Ltd. | Chip light-emitting diode and method for its production |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
JP4370158B2 (en) | 2003-12-24 | 2009-11-25 | シャープ株式会社 | Optical coupler and electronic device using the same |
DE10361801A1 (en) * | 2003-12-30 | 2005-08-04 | Osram Opto Semiconductors Gmbh | Radiation emitting and/or radiation receiving semiconductor element with a semiconductor chip useful in LED technology, and in reaction-flow processes and surface mounting technology (SMT) |
JP4181515B2 (en) * | 2004-02-25 | 2008-11-19 | シャープ株式会社 | Optical semiconductor device and electronic device using the same |
US7488990B2 (en) * | 2004-04-02 | 2009-02-10 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Using multiple types of phosphor in combination with a light emitting device |
US7348220B2 (en) * | 2004-04-30 | 2008-03-25 | Sumitomo Bakelite Co., Ltd. | Resin-encapsulated type semiconductor packages, and production method and apparatus therefor |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
JP2006024645A (en) * | 2004-07-06 | 2006-01-26 | Rohm Co Ltd | Semiconductor light emitting device |
JP4348267B2 (en) * | 2004-09-22 | 2009-10-21 | シャープ株式会社 | Optical semiconductor device, optical communication device, and electronic equipment |
US20060061261A1 (en) * | 2004-09-22 | 2006-03-23 | Kun-Chui Lee | White light emitting device |
US8324641B2 (en) * | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US8816369B2 (en) | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
CN100382342C (en) * | 2004-11-09 | 2008-04-16 | 金利精密工业股份有限公司 | Light-emitting diode support and producing method thereof |
US7501659B2 (en) * | 2005-04-12 | 2009-03-10 | Japan Cash Machine Co., Ltd. | LED device and optical detector therewith for bill validator |
CN100403563C (en) * | 2005-04-18 | 2008-07-16 | 光宝科技股份有限公司 | LED with white light and fluorescent powder concerned and preparation thereof |
CN100485893C (en) * | 2005-09-09 | 2009-05-06 | 鸿富锦精密工业(深圳)有限公司 | Producing process for video sensing chip packaging and structure |
JP2007165811A (en) | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | Light emitting device |
KR20080106402A (en) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Separate optical device for directing light from an led |
US7675145B2 (en) * | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
JP2009538536A (en) | 2006-05-26 | 2009-11-05 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Solid state light emitting device and method of manufacturing the same |
KR100904152B1 (en) * | 2006-06-30 | 2009-06-25 | 서울반도체 주식회사 | Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method |
EP3624560A1 (en) * | 2006-08-23 | 2020-03-18 | IDEAL Industries Lighting LLC | Lighting device and lighting method |
WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
EP2095018A1 (en) | 2006-12-04 | 2009-09-02 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
US9310026B2 (en) | 2006-12-04 | 2016-04-12 | Cree, Inc. | Lighting assembly and lighting method |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9196799B2 (en) * | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
JP5122172B2 (en) * | 2007-03-30 | 2013-01-16 | ローム株式会社 | Semiconductor light emitting device |
WO2009012287A1 (en) | 2007-07-17 | 2009-01-22 | Cree Led Lighting Solutions, Inc. | Optical elements with internal optical features and methods of fabricating same |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
JP5392084B2 (en) * | 2007-09-06 | 2014-01-22 | 株式会社ニコン | Light emitting diode element and method for manufacturing the same |
TWI492412B (en) * | 2007-09-07 | 2015-07-11 | Cree Inc | Wafer level phosphor coating method and devices fabricated utilizing method |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
US8075165B2 (en) | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US8368112B2 (en) * | 2009-01-14 | 2013-02-05 | Cree Huizhou Opto Limited | Aligned multiple emitter package |
TWI483418B (en) * | 2009-04-09 | 2015-05-01 | Lextar Electronics Corp | Packaging process of a light emitting diode |
TWI370216B (en) * | 2009-06-29 | 2012-08-11 | Lextar Electronics Corp | Led lighting device |
JP5496570B2 (en) * | 2009-08-05 | 2014-05-21 | シャープ株式会社 | Light emitting device |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
JP5347953B2 (en) * | 2009-12-28 | 2013-11-20 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
JP5383611B2 (en) * | 2010-01-29 | 2014-01-08 | 株式会社東芝 | LED package |
JP5052630B2 (en) * | 2010-01-29 | 2012-10-17 | 株式会社東芝 | Surface mount diode and method for manufacturing the same |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
JP6009471B2 (en) | 2011-03-08 | 2016-10-19 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Luminescence products, light sources and lighting fixtures |
JP5545601B2 (en) * | 2011-11-07 | 2014-07-09 | 信越化学工業株式会社 | Phosphor highly-filled wavelength conversion sheet, method for manufacturing light-emitting semiconductor device using the same, and light-emitting semiconductor device |
US8564004B2 (en) | 2011-11-29 | 2013-10-22 | Cree, Inc. | Complex primary optics with intermediate elements |
WO2013115379A1 (en) * | 2012-02-02 | 2013-08-08 | シチズンホールディングス株式会社 | Semiconductor light emitting device and fabrication method for same |
DE102012201616A1 (en) * | 2012-02-03 | 2013-08-08 | Tridonic Jennersdorf Gmbh | Plastic carrier for use with lead frame for light emitting diode chip of light emitting diode module, has mechanical connection for mounting optical elements, and insulation displacement contact for contacting light emitting diode chips |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
DE102012207563A1 (en) * | 2012-05-07 | 2013-11-07 | Osram Gmbh | Lamp device i.e. incandescent lamp retrofitlamp, for illuminating room, has plate-like lamp modules including semiconductor light sources, and curved printed circuit board accommodated between upper and lower layers of multi-layer retainer |
DE102012207566A1 (en) * | 2012-05-07 | 2013-11-07 | Osram Gmbh | Lighting device e.g. floor lamp has upper layer and bottom layer that are attached over specific side of semiconductor light source in light radiation pattern |
JP5431536B2 (en) * | 2012-06-21 | 2014-03-05 | ローム株式会社 | Semiconductor light emitting device |
KR101886157B1 (en) * | 2012-08-23 | 2018-08-08 | 엘지이노텍 주식회사 | Light emitting deviceand lighting system |
US8890196B2 (en) * | 2013-03-14 | 2014-11-18 | Goldeneye, Inc. | Lightweight self-cooling light sources |
KR102135352B1 (en) * | 2013-08-20 | 2020-07-17 | 엘지전자 주식회사 | Display |
JP5646708B2 (en) * | 2013-08-22 | 2014-12-24 | ローム株式会社 | Semiconductor device |
JP5646784B2 (en) * | 2014-06-13 | 2014-12-24 | ローム株式会社 | Semiconductor light emitting device |
JP5689558B2 (en) * | 2014-08-28 | 2015-03-25 | ローム株式会社 | Semiconductor light emitting device |
JP5878226B2 (en) * | 2014-11-19 | 2016-03-08 | ローム株式会社 | Semiconductor light emitting device |
CN108540086A (en) * | 2018-01-18 | 2018-09-14 | 浙江人和光伏科技有限公司 | A kind of conductive module of solar battery connecting box |
Citations (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3935501A (en) * | 1975-02-13 | 1976-01-27 | Digital Components Corporation | Micro-miniature light source assemblage and mounting means therefor |
US4160308A (en) * | 1976-02-02 | 1979-07-10 | Fairchild Camera And Instrument Corporation | Optically coupled isolator device and method of making same |
US4287105A (en) * | 1980-01-14 | 1981-09-01 | Plaskon Products, Inc. | Flash resistant epoxy encapsulating composition and process for preparing same |
US4334035A (en) * | 1981-03-19 | 1982-06-08 | Mitsubishi Petrochemical Co., Ltd. | Unsaturated polyester resin composition |
US4412135A (en) * | 1979-03-23 | 1983-10-25 | Sharp Kabushiki Kaisha | Photo coupler device molding including filler particles |
US4712017A (en) * | 1984-10-16 | 1987-12-08 | Kabushiki Kaisha Toshiba | Photocoupler device having reflecting surface enhance signal transmission |
US4872765A (en) * | 1983-04-20 | 1989-10-10 | The United States Of America As Represented By The Secretary Of The Army | Dual mode quartz thermometric sensing device |
US5035483A (en) * | 1989-05-31 | 1991-07-30 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
US5107327A (en) * | 1990-07-16 | 1992-04-21 | Nitto Denko Corporation | Photosemiconductor device and epoxy resin composition for use in molding photosemiconductor |
US5137940A (en) * | 1989-02-09 | 1992-08-11 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin compositions |
US5145889A (en) * | 1988-12-23 | 1992-09-08 | Kabushiki Kaisha Toshiba | Acid anhydride-cured epoxy resin encapsulant with triorganothiophosphite |
US5436492A (en) * | 1992-06-23 | 1995-07-25 | Sony Corporation | Charge-coupled device image sensor |
US5530566A (en) * | 1992-09-24 | 1996-06-25 | Kent State University | Polymer dispersed ferroelectric smectic liquid crystal formed by inducing a force during phase separation |
US5635327A (en) * | 1992-12-28 | 1997-06-03 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor and process for preparing the same |
US5682066A (en) * | 1996-08-12 | 1997-10-28 | Motorola, Inc. | Microelectronic assembly including a transparent encapsulant |
US5770867A (en) * | 1995-02-14 | 1998-06-23 | Sharp Kabushiki Kaisha | Photocoupler device with light-transmissive resin including fillers and a producing process thereof |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US5792822A (en) * | 1994-06-24 | 1998-08-11 | Seiko Epson Corporation | Transparent plastic material, optical article based on the material, and production method thereof |
US5906459A (en) * | 1996-06-20 | 1999-05-25 | Societe Nationale D'etude Et De Construction De Moteurs D'aviation "Snecma" | Laser-assisted milling process |
US5942770A (en) * | 1997-04-14 | 1999-08-24 | Rohm, Co., Ltd. | Light-emitting diode chip component and a light-emitting device |
US5981979A (en) * | 1996-11-29 | 1999-11-09 | Siemens Aktiengesellschaft | Radiation-emitting semiconductor component |
US6025067A (en) * | 1995-03-08 | 2000-02-15 | Fay; John Nicholas | Soft elastomeric composite composition |
US6051848A (en) * | 1998-03-02 | 2000-04-18 | Motorola, Inc. | Optical device packages containing an optical transmitter die |
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US6197416B1 (en) * | 1998-09-17 | 2001-03-06 | Eastman Kodak Company | Transmission imaging display material with biaxially oriented polyolefin sheet |
US6197413B1 (en) * | 1997-07-04 | 2001-03-06 | L'oreal | Article made of plastics material, a method of manufacture, and a molding composition |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US20020028527A1 (en) * | 1999-01-11 | 2002-03-07 | Toshihide Maeda | Composite light-emitting device, semicon ductor light-emitting unit and method for fabricating the unit |
US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
US20020072137A1 (en) * | 2000-12-09 | 2002-06-13 | Ih Teng Yul | Optosemiconductor device and the method for its manufacture |
US20020097579A1 (en) * | 2001-01-24 | 2002-07-25 | Stalions Drake Charles | Semiconductor light emitting device |
US6432745B1 (en) * | 1993-09-30 | 2002-08-13 | Siemens Aktiengesellschaft | Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof |
US20020158565A1 (en) * | 2001-04-27 | 2002-10-31 | Setlur Anant Achyut | Phosphor blends for generating white light from near-UV/blue light-emitting devices |
US6476930B1 (en) * | 1998-12-04 | 2002-11-05 | Ricoh Corporation | Output processing and merging of hybrid electronic documents |
US20020195935A1 (en) * | 1999-12-30 | 2002-12-26 | Harald Jager | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
US6555958B1 (en) * | 2000-05-15 | 2003-04-29 | General Electric Company | Phosphor for down converting ultraviolet light of LEDs to blue-green light |
US6576930B2 (en) * | 1996-06-26 | 2003-06-10 | Osram Opto Semiconductors Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US20030156424A1 (en) * | 2001-09-26 | 2003-08-21 | Grutze Glen A. | Gobo projector for a vehicle |
US20030168720A1 (en) * | 2002-03-06 | 2003-09-11 | Nichia Corporation | Semiconductor device and manufacturing method for same |
US20030168670A1 (en) * | 1999-03-15 | 2003-09-11 | Roberts John K. | Method of making radiation emitter devices |
US6624491B2 (en) * | 1998-06-30 | 2003-09-23 | Osram Opto Semiconductors Gmbh & Co. | Diode housing |
US20040026709A1 (en) * | 2000-04-26 | 2004-02-12 | Stefan Bader | Gan-based light emitting-diode chip and a method for producing a luminescent diode component |
US20040046242A1 (en) * | 2002-09-05 | 2004-03-11 | Hideo Asakawa | Semiconductor device and an optical device using the semiconductor device |
US20040075100A1 (en) * | 2001-04-10 | 2004-04-22 | Georg Bogner | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
US20040084681A1 (en) * | 1998-09-04 | 2004-05-06 | Roberts John K. | Radiation emitter device having an integral micro-groove lens |
US20040094757A1 (en) * | 2002-05-06 | 2004-05-20 | Bert Braune | Light emitting diode with wavelength conversion |
US20040124758A1 (en) * | 2000-07-28 | 2004-07-01 | Osram Opto Semiconductors Gmbh | Luminescene conversion based light emitting diode and phosphors for wave length conversion |
US6800373B2 (en) * | 2002-10-07 | 2004-10-05 | General Electric Company | Epoxy resin compositions, solid state devices encapsulated therewith and method |
US6809471B2 (en) * | 2002-06-28 | 2004-10-26 | General Electric Company | Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same |
US20040257797A1 (en) * | 2003-06-18 | 2004-12-23 | Yoshinobu Suehiro | Light emitting device |
US6888864B1 (en) * | 1999-09-24 | 2005-05-03 | Sharp Kabushiki Kaisha | Semiconductor laser device, optical transmission device, optical transmission system, electronic device, control device, connector, communication device, and optical transmission method and data transmission and reception method |
US6900511B2 (en) * | 2002-06-28 | 2005-05-31 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing it |
US6906459B2 (en) * | 1999-12-28 | 2005-06-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US20050162069A1 (en) * | 2000-12-28 | 2005-07-28 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20050245018A1 (en) * | 2001-10-31 | 2005-11-03 | Georg Bogner | Optoelectronic component |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57169281A (en) * | 1981-04-10 | 1982-10-18 | Mitsubishi Electric Corp | Semiconductor device |
JPH0429580Y2 (en) * | 1986-02-28 | 1992-07-17 | ||
US4672765A (en) * | 1986-05-23 | 1987-06-16 | Lutz Erno B | Illuminated fish attraction device |
DE3804293A1 (en) | 1988-02-12 | 1989-08-24 | Philips Patentverwaltung | Arrangement containing an electroluminescent or laser diode |
JPH03270083A (en) * | 1990-03-19 | 1991-12-02 | Hitachi Ltd | Light emitting diode package |
JPH0665473A (en) * | 1992-08-19 | 1994-03-08 | Denki Kagaku Kogyo Kk | Filler for optically functional element sealing resin and resin composition using the same |
JPH06204569A (en) * | 1992-12-28 | 1994-07-22 | Casio Comput Co Ltd | Structure of light-emitting diode |
JP3308078B2 (en) * | 1993-12-14 | 2002-07-29 | ローム株式会社 | Resin-sealed semiconductor device |
JPH08176407A (en) | 1994-12-22 | 1996-07-09 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
JP2913577B2 (en) * | 1995-04-13 | 1999-06-28 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
DE19803936A1 (en) | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Expansion-compensated optoelectronic semiconductor component, in particular UV-emitting light-emitting diode and method for its production |
JP3908383B2 (en) * | 1998-05-29 | 2007-04-25 | ローム株式会社 | Semiconductor device |
JPH11346005A (en) * | 1998-05-29 | 1999-12-14 | Rohm Co Ltd | Optical semiconductor device |
JP2907286B1 (en) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
JP2000077720A (en) * | 1998-08-31 | 2000-03-14 | Sanyo Electric Co Ltd | Optical semiconductor device |
-
2001
- 2001-06-29 DE DE10131698A patent/DE10131698A1/en not_active Withdrawn
-
2002
- 2002-04-25 WO PCT/DE2002/001514 patent/WO2003005458A1/en active Application Filing
- 2002-04-25 JP JP2003511322A patent/JP2004534405A/en active Pending
- 2002-04-25 CN CN2008101744530A patent/CN101420006B/en not_active Expired - Fee Related
- 2002-04-25 CN CNB028170849A patent/CN100524849C/en not_active Expired - Fee Related
- 2002-04-25 EP EP02782430.9A patent/EP1399978B1/en not_active Expired - Lifetime
- 2002-06-20 TW TW091113479A patent/TWI338378B/en not_active IP Right Cessation
-
2003
- 2003-12-29 US US10/747,703 patent/US7436002B2/en not_active Expired - Fee Related
-
2008
- 2008-09-16 US US12/211,256 patent/US20090011527A1/en not_active Abandoned
Patent Citations (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3935501A (en) * | 1975-02-13 | 1976-01-27 | Digital Components Corporation | Micro-miniature light source assemblage and mounting means therefor |
US4160308A (en) * | 1976-02-02 | 1979-07-10 | Fairchild Camera And Instrument Corporation | Optically coupled isolator device and method of making same |
US4412135A (en) * | 1979-03-23 | 1983-10-25 | Sharp Kabushiki Kaisha | Photo coupler device molding including filler particles |
US4287105A (en) * | 1980-01-14 | 1981-09-01 | Plaskon Products, Inc. | Flash resistant epoxy encapsulating composition and process for preparing same |
US4334035A (en) * | 1981-03-19 | 1982-06-08 | Mitsubishi Petrochemical Co., Ltd. | Unsaturated polyester resin composition |
US4872765A (en) * | 1983-04-20 | 1989-10-10 | The United States Of America As Represented By The Secretary Of The Army | Dual mode quartz thermometric sensing device |
US4712017A (en) * | 1984-10-16 | 1987-12-08 | Kabushiki Kaisha Toshiba | Photocoupler device having reflecting surface enhance signal transmission |
US5145889A (en) * | 1988-12-23 | 1992-09-08 | Kabushiki Kaisha Toshiba | Acid anhydride-cured epoxy resin encapsulant with triorganothiophosphite |
US5137940A (en) * | 1989-02-09 | 1992-08-11 | Shin-Etsu Chemical Co., Ltd. | Semiconductor encapsulating epoxy resin compositions |
US5035483A (en) * | 1989-05-31 | 1991-07-30 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
US5107327A (en) * | 1990-07-16 | 1992-04-21 | Nitto Denko Corporation | Photosemiconductor device and epoxy resin composition for use in molding photosemiconductor |
US5436492A (en) * | 1992-06-23 | 1995-07-25 | Sony Corporation | Charge-coupled device image sensor |
US5530566A (en) * | 1992-09-24 | 1996-06-25 | Kent State University | Polymer dispersed ferroelectric smectic liquid crystal formed by inducing a force during phase separation |
US5635327A (en) * | 1992-12-28 | 1997-06-03 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor and process for preparing the same |
US6432745B1 (en) * | 1993-09-30 | 2002-08-13 | Siemens Aktiengesellschaft | Two-pole SMT miniature housing for semiconductor components and method for the manufacture thereof |
US5792822A (en) * | 1994-06-24 | 1998-08-11 | Seiko Epson Corporation | Transparent plastic material, optical article based on the material, and production method thereof |
US5770867A (en) * | 1995-02-14 | 1998-06-23 | Sharp Kabushiki Kaisha | Photocoupler device with light-transmissive resin including fillers and a producing process thereof |
US6025067A (en) * | 1995-03-08 | 2000-02-15 | Fay; John Nicholas | Soft elastomeric composite composition |
US5906459A (en) * | 1996-06-20 | 1999-05-25 | Societe Nationale D'etude Et De Construction De Moteurs D'aviation "Snecma" | Laser-assisted milling process |
US6812500B2 (en) * | 1996-06-26 | 2004-11-02 | Osram Opto Semiconductors Gmbh & Co. Ohg. | Light-radiating semiconductor component with a luminescence conversion element |
US6576930B2 (en) * | 1996-06-26 | 2003-06-10 | Osram Opto Semiconductors Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US5777433A (en) * | 1996-07-11 | 1998-07-07 | Hewlett-Packard Company | High refractive index package material and a light emitting device encapsulated with such material |
US5682066A (en) * | 1996-08-12 | 1997-10-28 | Motorola, Inc. | Microelectronic assembly including a transparent encapsulant |
US6245259B1 (en) * | 1996-09-20 | 2001-06-12 | Osram Opto Semiconductors, Gmbh & Co. Ohg | Wavelength-converting casting composition and light-emitting semiconductor component |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US6277301B1 (en) * | 1996-09-20 | 2001-08-21 | Osram Opto Semiconductor, Gmbh & Co. Ohg | Method of producing a wavelength-converting casting composition |
US5981979A (en) * | 1996-11-29 | 1999-11-09 | Siemens Aktiengesellschaft | Radiation-emitting semiconductor component |
US6054716A (en) * | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US5942770A (en) * | 1997-04-14 | 1999-08-24 | Rohm, Co., Ltd. | Light-emitting diode chip component and a light-emitting device |
US6197413B1 (en) * | 1997-07-04 | 2001-03-06 | L'oreal | Article made of plastics material, a method of manufacture, and a molding composition |
US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6051848A (en) * | 1998-03-02 | 2000-04-18 | Motorola, Inc. | Optical device packages containing an optical transmitter die |
US6624491B2 (en) * | 1998-06-30 | 2003-09-23 | Osram Opto Semiconductors Gmbh & Co. | Diode housing |
US20040084681A1 (en) * | 1998-09-04 | 2004-05-06 | Roberts John K. | Radiation emitter device having an integral micro-groove lens |
US6197416B1 (en) * | 1998-09-17 | 2001-03-06 | Eastman Kodak Company | Transmission imaging display material with biaxially oriented polyolefin sheet |
US6476930B1 (en) * | 1998-12-04 | 2002-11-05 | Ricoh Corporation | Output processing and merging of hybrid electronic documents |
US20020028527A1 (en) * | 1999-01-11 | 2002-03-07 | Toshihide Maeda | Composite light-emitting device, semicon ductor light-emitting unit and method for fabricating the unit |
US20030168670A1 (en) * | 1999-03-15 | 2003-09-11 | Roberts John K. | Method of making radiation emitter devices |
US20050133810A1 (en) * | 1999-03-15 | 2005-06-23 | Roberts John K. | Opto-electronic assembly having an encapsulant with at least two different functional zones |
US6888864B1 (en) * | 1999-09-24 | 2005-05-03 | Sharp Kabushiki Kaisha | Semiconductor laser device, optical transmission device, optical transmission system, electronic device, control device, connector, communication device, and optical transmission method and data transmission and reception method |
US6906459B2 (en) * | 1999-12-28 | 2005-06-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US7098588B2 (en) * | 1999-12-30 | 2006-08-29 | Osram Opto Semiconductors Gmbh | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
US20020195935A1 (en) * | 1999-12-30 | 2002-12-26 | Harald Jager | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
US7534634B2 (en) * | 1999-12-30 | 2009-05-19 | Osram Gmbh | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source |
US20040026709A1 (en) * | 2000-04-26 | 2004-02-12 | Stefan Bader | Gan-based light emitting-diode chip and a method for producing a luminescent diode component |
US6555958B1 (en) * | 2000-05-15 | 2003-04-29 | General Electric Company | Phosphor for down converting ultraviolet light of LEDs to blue-green light |
US20040124758A1 (en) * | 2000-07-28 | 2004-07-01 | Osram Opto Semiconductors Gmbh | Luminescene conversion based light emitting diode and phosphors for wave length conversion |
US20020072137A1 (en) * | 2000-12-09 | 2002-06-13 | Ih Teng Yul | Optosemiconductor device and the method for its manufacture |
US20050162069A1 (en) * | 2000-12-28 | 2005-07-28 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20020097579A1 (en) * | 2001-01-24 | 2002-07-25 | Stalions Drake Charles | Semiconductor light emitting device |
US20040075100A1 (en) * | 2001-04-10 | 2004-04-22 | Georg Bogner | Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component |
US20020158565A1 (en) * | 2001-04-27 | 2002-10-31 | Setlur Anant Achyut | Phosphor blends for generating white light from near-UV/blue light-emitting devices |
US20030156424A1 (en) * | 2001-09-26 | 2003-08-21 | Grutze Glen A. | Gobo projector for a vehicle |
US20050245018A1 (en) * | 2001-10-31 | 2005-11-03 | Georg Bogner | Optoelectronic component |
US20030168720A1 (en) * | 2002-03-06 | 2003-09-11 | Nichia Corporation | Semiconductor device and manufacturing method for same |
US20040094757A1 (en) * | 2002-05-06 | 2004-05-20 | Bert Braune | Light emitting diode with wavelength conversion |
US6809471B2 (en) * | 2002-06-28 | 2004-10-26 | General Electric Company | Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same |
US6900511B2 (en) * | 2002-06-28 | 2005-05-31 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing it |
US20040046242A1 (en) * | 2002-09-05 | 2004-03-11 | Hideo Asakawa | Semiconductor device and an optical device using the semiconductor device |
US6800373B2 (en) * | 2002-10-07 | 2004-10-05 | General Electric Company | Epoxy resin compositions, solid state devices encapsulated therewith and method |
US20040257797A1 (en) * | 2003-06-18 | 2004-12-23 | Yoshinobu Suehiro | Light emitting device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080197376A1 (en) * | 2005-02-28 | 2008-08-21 | Braune Bert | Method for Producing an Optical, Radiation-Emitting Component and Optical, Radiation-Emitting Component |
US8247263B2 (en) * | 2005-02-28 | 2012-08-21 | Osram Opto Semiconductors Gmbh | Method for producing an optical, radiation-emitting component and optical, radiation-emitting component |
US20130001597A1 (en) * | 2011-06-28 | 2013-01-03 | Osram Sylvania Inc. | Lighting Device Having a Color Tunable Wavelength Converter |
US10340426B2 (en) * | 2017-07-06 | 2019-07-02 | Epistar Corporation | Phosphor and illumination device utilizing the same |
Also Published As
Publication number | Publication date |
---|---|
DE10131698A1 (en) | 2003-01-30 |
EP1399978A1 (en) | 2004-03-24 |
CN100524849C (en) | 2009-08-05 |
CN101420006B (en) | 2012-08-29 |
EP1399978B1 (en) | 2015-06-24 |
US7436002B2 (en) | 2008-10-14 |
CN1550047A (en) | 2004-11-24 |
JP2004534405A (en) | 2004-11-11 |
CN101420006A (en) | 2009-04-29 |
TWI338378B (en) | 2011-03-01 |
US20040188697A1 (en) | 2004-09-30 |
WO2003005458A1 (en) | 2003-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7436002B2 (en) | Surface-mountable radiation-emitting component | |
US7534634B2 (en) | Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source | |
US20210336094A1 (en) | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body | |
US7709852B2 (en) | Wavelength-converting casting composition and light-emitting semiconductor component | |
US6613247B1 (en) | Wavelength-converting casting composition and white light-emitting semiconductor component | |
US7045956B2 (en) | Light emitting diode with wavelength conversion | |
US7319245B2 (en) | Radiation emitting semiconductor component with luminescent conversion element | |
JP4269709B2 (en) | Light emitting device and manufacturing method thereof | |
US7151283B2 (en) | Light-radiating semiconductor component with a luminescence conversion element | |
JP3428597B2 (en) | Optical semiconductor device and method of manufacturing the same | |
US8476655B2 (en) | Electromagnetic-radiation-emitting optoelectronic component and method for producing an optoelectronic component | |
US20070138484A1 (en) | Light-emitting device and method of manufacturing the same | |
JP3417415B1 (en) | Epoxy resin composition, method for producing the same, and optical semiconductor device using the same | |
KR100821684B1 (en) | A white LED device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BRUNNER, HERBERT;HOHN, KLAUS;JAGER, HARALD;AND OTHERS;REEL/FRAME:021843/0552;SIGNING DATES FROM 20040831 TO 20040923 Owner name: OSRAM GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OSRAM OTO SEMICONDUCTORS GMBH;REEL/FRAME:021843/0333 Effective date: 20050811 |
|
AS | Assignment |
Owner name: OSRAM GMBH, GERMANY Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNORS NAME PREVIOUSLY RECORDED ON REEL 021843 FRAME 0333;ASSIGNOR:OSRAM OPTO SEMICONDUCTORS GMBH;REEL/FRAME:021884/0572 Effective date: 20050811 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |