US20090139704A1 - Heat sink device - Google Patents

Heat sink device Download PDF

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Publication number
US20090139704A1
US20090139704A1 US11/910,460 US91046006A US2009139704A1 US 20090139704 A1 US20090139704 A1 US 20090139704A1 US 91046006 A US91046006 A US 91046006A US 2009139704 A1 US2009139704 A1 US 2009139704A1
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United States
Prior art keywords
insulating substrate
heat radiator
stress relaxation
relaxation member
aluminum plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US11/910,460
Inventor
Kota Otoshi
Eiji Kono
Hidehito Kubo
Masahiko Kimbara
Yuichi Furukawa
Shinobu Yamauchi
Ryoichi Hoshino
Nobuhiro Wakabayashi
Shintaro Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Resonac Holdings Corp
Original Assignee
Toyota Industries Corp
Showa Denko KK
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Publication date
Application filed by Toyota Industries Corp, Showa Denko KK filed Critical Toyota Industries Corp
Assigned to SHOWA DENKO K.K., KABUSHIKI KAISHA TOYOTA JIDOSHOKKI reassignment SHOWA DENKO K.K. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIMBARA, MASAHIKO, KONO, EIJI, KUBO, HIDEHITO, OTOSHI, KOTA, FURUKAWA, YUICHI, HOSHINO, RYOICHI, NAKAGAWA, SHINTARO, WAKABAYASHI, NOBUHIRO, YAMAUCHI, SHINOBU
Publication of US20090139704A1 publication Critical patent/US20090139704A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0364Conductor shape
    • H05K2201/0373Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09681Mesh conductors, e.g. as a ground plane
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/0969Apertured conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007Surface contacts, e.g. bumps
    • H05K3/4015Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a heat radiator, and more particularly to a heat radiator which includes an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate and which radiates, from the heat sink, heat generated from a heat-generating-element, such as a semiconductor device, mounted on the insulating substrate.
  • a heat radiator which includes an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate and which radiates, from the heat sink, heat generated from a heat-generating-element, such as a semiconductor device, mounted on the insulating substrate.
  • aluminum as used herein and in the appended claims encompasses aluminum alloys in addition to pure aluminum, except for the case where “pure aluminum” is specified.
  • the semiconductor device In a power module which uses a semiconductor device, such as an IGBT (Insulated Gate Bipolar Transistor), the semiconductor device must be held at a predetermined temperature or lower by means of efficiently radiating heat generated therefrom.
  • a heat radiator is used.
  • the heat radiator includes an insulating substrate which is formed of a ceramic, such as Al 2 O 3 or AlN, and whose first side serves as a heat-generating-element-mounting side, and a heat sink which is formed of a high-thermal-conduction metal, such as aluminum or copper (including copper alloys; hereinafter, the same is applied), and is soldered to a second side of the insulating substrate.
  • a semiconductor device is soldered to the heat-generating-element-mounting side of the insulating substrate of the heat radiator, thereby forming the power module.
  • a power module used in, for example, a hybrid car must maintain the heat radiation performance of a heat radiator over a long term.
  • the above-mentioned conventional heat radiator involves the following problem. Under some working conditions, thermal stress arises from a difference in thermal expansion coefficient between the insulating substrate and the heat sink and causes cracking in the insulating substrate, cracking in a solder layer which bonds the insulating substrate and the heat sink together, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Such cracking or warpage impairs heat radiation performance.
  • a proposed heat radiator in which the above problem is solved includes an insulating substrate whose first side serves as a heat-generating-element-mounting side, a heat radiation member which is soldered to a second side of the insulating substrate, and a heat sink which is screwed on the heat radiation member.
  • the heat radiation member includes a pair of platelike heat-radiation-member bodies formed of a high-thermal-conduction material, such as aluminum or copper, and a low-thermal-expansion material, such as an Invar alloy, intervening between the platelike heat-radiation-member bodies.
  • the heat radiator described in Patent Document 1 must use the heat radiation member formed of a high-thermal-conduction material and a low-thermal-expansion material; thus, material cost is increased. Furthermore, since the heat radiation member and the heat sink are merely screwed together, thermal conduction therebetween is insufficient, resulting in a failure to provide sufficient heat radiation performance.
  • Patent Document 1 Japanese Patent Application Laid-Open (kokai) No. 2004-153075
  • An object of the present invention is to solve the above problem and to provide a heat radiator whose material cost is low and which exhibits excellent heat radiation performance.
  • the present invention comprises the following modes.
  • a heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
  • a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the second side of the insulating substrate and the heat sink, and the stress relaxation member is metal-bonded to the insulating substrate and to the heat sink.
  • a heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
  • a metal layer is formed on a side of the insulating substrate opposite the heat-generating-element-mounting side; a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the metal layer and the heat sink; and the stress relaxation member is metal-bonded to the metal layer of the insulating substrate and to the heat sink.
  • non-angular refers to a shape which does not have a mathematically defined acute angle, obtuse angle, or right angle; for example, a circle, an ellipse, an elongated circle, or a substantially polygonal shape whose corners are rounded.
  • circumle-equivalent diameter refers to the diameter of a circle whose area is equal to that of a shape in question.
  • the through holes have a circle-equivalent diameter of 1 mm to 4 mm, for the following reason. If the circle-equivalent diameter of the through holes is too small, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the circle-equivalent diameter of the through holes is too large, thermal conductivity may drop.
  • the through holes may be filled with a brazing material, with the potential result that the stress relaxation member is not deformed at all even when thermal stress arises in the heat radiator.
  • the percentage of the total area of all of the through holes to the area of one side of the aluminum plate is 3% to 50%, for the following reason. If the percentage is too low, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the percentage is too high, thermal conductivity may drop.
  • the openings of the recesses have a circle-equivalent diameter of 1 mm to 4 mm, for the following reason. If the circle-equivalent diameter of the openings of the recesses is too small, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the circle-equivalent diameter of the openings of the recesses is too large, thermal conductivity may drop.
  • the recesses may be filled with a brazing material, with the potential result that the stress relaxation member is not deformed at all even when thermal stress arises in the heat radiator.
  • the percentage of the total area of openings of all of the through holes to the area of the side of the aluminum plate on which the recesses are formed is 3% to 50%, for the following reason. If the percentage is too low, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the percentage is too high, thermal conductivity may drop.
  • the aluminum plate used to form the stress relaxation member has a thickness of 0.3 mm to 3 mm, for the following reason. If the aluminum plate is too thin, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the aluminum plate is too thick, thermal conductivity may drop.
  • the thickness of the corrugate aluminum plate is 0.05 mm to 1 mm, for the following reason. If the corrugate aluminum plate is too thin, difficulty is involved in processing for obtaining the corrugate aluminum plate, and buckling may arise. If the corrugate aluminum plate is too thick, difficulty is involved in processing for obtaining the corrugate aluminum plate. In either case, difficulty is involved in finishing for obtaining a predetermined shape.
  • a power module comprising a heat radiator according to any one of pars. 1) to 23), and a semiconductor device mounted on the insulating substrate of the heat radiator.
  • the stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the insulating substrate and the heat sink, and the stress relaxation member is metal-bonded to the insulating substrate and to the heat sink.
  • excellent thermal conductivity is established between the insulating substrate and the heat sink, thereby improving heat radiation performance for radiating heat generated by a semiconductor device mounted on the insulating substrate.
  • the stress relaxation member is deformed by the effect of the stress-absorbing space; thus, the thermal stress is relaxed, thereby preventing cracking in the insulating substrate, cracking in a bond zone between the insulating substrate and the stress relaxation member, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Accordingly, heat radiation performance is maintained over a long term. Also, use of the stress relaxation member described in any one of pars. 6) to 20) lowers cost of the stress relaxation member, thereby lowering material cost for the heat radiator.
  • the stress relaxation member is brazed to the insulating substrate and to the heat sink.
  • bonding of the stress relaxation member and the insulating substrate and bonding of the stress relaxation member and the heat sink can be performed simultaneously, thereby improving workability in fabrication of the heat radiator.
  • the heat radiator described in Patent Document 1 after the insulating substrate and the heat radiation member are soldered together, the heat radiation member and the heat sink must be screwed together; therefore, workability in fabrication of the heat radiator is poor.
  • the metal layer is formed on a side of the insulating substrate opposite the heat-generating-element-mounting side; the stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the metal layer and the heat sink; and the stress relaxation member is metal-bonded to the metal layer of the insulating substrate and to the heat sink.
  • excellent thermal conductivity is established between the insulating substrate and the heat sink, thereby improving heat radiation performance for radiating heat generated by a semiconductor device mounted on the insulating substrate.
  • the stress relaxation member is deformed by the effect of the stress-absorbing space; thus, the thermal stress is relaxed, thereby preventing cracking in the insulating substrate, cracking in a bond zone between the metal layer of the insulating substrate and the stress relaxation member, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Accordingly, heat radiation performance is maintained over a long term. Also, use of the stress relaxation member described in any one of pars. 6) to 20) lowers cost of the stress relaxation member, thereby lowering material cost for the heat radiator.
  • the stress relaxation member is brazed to the metal layer of the insulating substrate and to the heat sink.
  • bonding of the stress relaxation member and the metal layer of the insulating substrate and bonding of the stress relaxation member and the heat sink can be performed simultaneously, thereby improving workability in fabrication of the heat radiator.
  • the heat radiator described in Patent Document 1 after the insulating substrate and the heat radiation member are soldered together, the heat radiation member and the heat sink must be screwed together; therefore, workability in fabrication of the heat radiator is poor.
  • the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of the through holes; thus, thermal stress is relaxed.
  • the heat radiator of par. 7 exhibits excellent thermal-stress relaxation effect. A largest thermal stress or strain is likely to arise in a perimetric portion of the insulating substrate of the heat radiator. However, by virtue of the configuration of par. 7), a portion of the aluminum plate corresponding to the perimetric portion of the insulating substrate is apt to be deformed by the effect of the through holes, thereby relaxing the thermal stress.
  • the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of the recesses, thereby relaxing the thermal stress.
  • the heat radiator of par. 11 exhibits excellent thermal-stress relaxation effect. A largest thermal stress or strain is likely to arise in a perimetric portion of the insulating substrate of the heat radiator. However, by virtue of the configuration of par. 11), a portion of the aluminum plate corresponding to the perimetric portion of the insulating substrate is apt to be deformed by the effect of the recesses, thereby relaxing the thermal stress.
  • the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of recesses and through holes, thereby relaxing the thermal stress.
  • the stress relaxation member is deformed by the effect of the stress-absorbing spaces of the corrugate aluminum plate, thereby relaxing the thermal stress.
  • the cutout portion enhances the thermal-stress relaxation effect.
  • the spaces between the adjacent corrugate aluminum plates enhance the thermal-stress relaxation effect.
  • the thermal-stress relaxation effect is enhanced in different directions.
  • wettability of a molten brazing material on the stress relaxation member becomes excellent when the stress relaxation member and the insulating substrate or the metal layer of the insulating substrate are to be brazed together and when the stress relaxation member and the heat sink are to be brazed together, thereby improving brazing workability. Furthermore, when brazing heat causes a drop in the strength of the stress relaxation member and generation of thermal stress in the heat radiator, the stress relaxation member is apt to be deformed, thereby yielding excellent stress relaxation effect.
  • FIG. 1 The upper and lower sides of FIG. 1 will be referred to as “upper” and “lower,” respectively.
  • like features or parts are denoted by like reference numerals, and repeated description thereof is omitted.
  • FIG. 1 shows a portion of a power module which uses a heat radiator of a first embodiment of the present invention.
  • FIG. 2 shows a stress relaxation member.
  • the power module includes a heat radiator ( 1 ) and a semiconductor device ( 2 ); for example, an IGBT, mounted on the heat radiator ( 1 ).
  • the heat radiator ( 1 ) includes an insulating substrate ( 3 ) which is formed of a ceramic and whose upper side serves as a heat-generating-element-mounting side; a stress relaxation member ( 4 ) bonded to the lower side of the insulating substrate ( 3 ); and a heat sink ( 5 ) bonded to the lower side of the stress relaxation member ( 4 ).
  • the insulating substrate ( 3 ) may be formed of any ceramic so long as it satisfies requirements for insulating characteristics, thermal conductivity, and mechanical strength. For example, Al 2 O 3 or AlN is used to form the insulating substrate ( 3 ).
  • a circuit layer ( 6 ) is formed on the upper surface of the insulating substrate ( 3 ), and the semiconductor device ( 2 ) is soldered onto the circuit layer ( 6 ). The solder layer is not shown.
  • the circuit layer ( 6 ) is formed of a metal having excellent electrical conductivity, such as aluminum or copper.
  • the circuit layer ( 6 ) is formed of a pure aluminum having high purity, which exhibits high electrical conductivity, high deformability, and excellent solderability in relation to a semiconductor device.
  • a metal layer ( 7 ) is formed on the lower surface of the insulating substrate ( 3 ).
  • the stress relaxation member ( 4 ) is brazed to the metal layer ( 7 ).
  • the brazing-material layer is not shown.
  • the metal layer ( 7 ) is formed of a metal having excellent thermal conductivity, such as aluminum or copper.
  • the metal layer ( 7 ) is formed of a pure aluminum having high purity, which exhibits high thermal conductivity, high deformability, and excellent wettability in relation to a molten brazing material.
  • the insulating substrate ( 3 ), the circuit layer ( 6 ), and the metal layer ( 7 ) constitute a power module substrate ( 8 ).
  • the stress relaxation member ( 4 ) is formed of a high-thermal-conduction material and has stress-absorbing spaces. As shown in FIG. 2 , the stress relaxation member ( 4 ) is formed of an aluminum plate ( 10 ) in which a plurality of non-angular holes; herein, circular through holes ( 9 ), are formed in a staggered arrangement, and the through holes ( 9 ) serve as stress-absorbing spaces.
  • the circular through holes ( 9 ) are formed in at least a portion of the aluminum plate ( 10 ) which corresponds to a perimetric portion of the insulating substrate ( 3 ); i.e., in the entire region of the aluminum plate ( 10 ), including a perimetric portion corresponding to the perimetric portion of the insulating substrate ( 3 ).
  • the aluminum plate ( 10 ) is formed of a pure aluminum having a purity of 99% or higher, desirably 99.5% or higher, which exhibits high thermal conductivity, high deformability induced by a drop in strength caused by brazing heat, and excellent wettability in relation to a molten brazing material.
  • the thickness of the aluminum plate ( 10 ) is preferably 0.3 mm to 3 mm, more preferably 0.3 mm to 1.5 mm.
  • the circle-equivalent diameter of the through holes ( 9 ) (here, the diameter of the through holes ( 9 ), because the through holes ( 9 ) are circular) is preferably 1 mm to 4 mm.
  • the percentage of the total area of all of the through holes ( 9 ) to the area of one side of the aluminum plate ( 10 ) is 3% to 50%.
  • the heat sink ( 5 ) assumes a flat, hollow shape in which a plurality of cooling-fluid channels ( 11 ) are formed in parallel, and is formed of aluminum, which exhibits excellent thermal conductivity and is light.
  • a cooling fluid may be either liquid or gas.
  • the stress relaxation member ( 4 ) is formed of an aluminum brazing sheet which is composed of a core formed of pure aluminum, and aluminum brazing-material layers covering respective opposite sides of the core.
  • Examples of an aluminum brazing-material include an Al—Si alloy and an Al—Si—Mg alloy.
  • the thickness of the aluminum brazing-material layer is about 10 ⁇ m to 200 ⁇ m. When the thickness is too small, lack of supply of the brazing material arises, potentially causing defective brazing. When the thickness is too large, excess supply of the brazing material arises, potentially causing generation of voids and a drop in thermal conductivity.
  • the power module substrate ( 8 ), the stress relaxation member ( 4 ), and the heat sink ( 5 ) are arranged in layers and restrained together by use of an appropriate jig to thereby apply an appropriate load to bond surfaces.
  • the resultant assembly is heated to 570° C. to 600° C. in a vacuum or an inert gas atmosphere.
  • brazing of the stress relaxation member ( 4 ) and the metal layer ( 7 ) of the power module substrate ( 8 ) and brazing of the stress relaxation member ( 4 ) and the heat sink ( 5 ) are performed simultaneously.
  • brazing of the stress relaxation member ( 4 ) and the metal layer ( 7 ) of the power module substrate ( 8 ) and brazing of the stress relaxation member ( 4 ) and the heat sink ( 5 ) may be performed as follows.
  • the stress relaxation member ( 4 ) is formed of a bare material of the above-mentioned pure aluminum.
  • the power module substrate ( 8 ), the stress relaxation member ( 4 ), and the heat sink ( 5 ) are arranged in layers.
  • a sheetlike aluminum brazing-material of, for example, an Al—Si alloy or an Al—Si—Mg alloy intervenes between the stress relaxation member ( 4 ) and the metal layer ( 7 ) of the power module substrate ( 8 ) and between the stress relaxation member ( 4 ) and the heat sink ( 5 ).
  • the thickness of the sheetlike aluminum brazing-material is about 10 ⁇ m to 200 ⁇ m. When the thickness is too small, lack of supply of the brazing material arises, potentially causing defective brazing. When the thickness is too large, excess supply of the brazing material arises, potentially causing generation of voids and a drop in thermal conductivity.
  • brazing is performed as in the above-mentioned case of use of the aluminum brazing sheet.
  • brazing of the stress relaxation member ( 4 ) and the metal layer ( 7 ) of the power module substrate ( 8 ) and brazing of the stress relaxation member ( 4 ) and the heat sink ( 5 ) are performed simultaneously.
  • FIG. 3 shows a second embodiment of the heat radiator according to the present invention.
  • the metal layer ( 7 ) is not formed on the lower surface of the insulating substrate ( 3 ) of the power module substrate ( 8 ); i.e., the stress relaxation member ( 4 ) is directly brazed to the insulating substrate ( 3 ). This brazing is performed in a manner similar to that of the first embodiment described above.
  • FIGS. 4 to 21 show modified embodiments of the stress relaxation member.
  • a stress relaxation member ( 20 ) shown in FIG. 4 is formed of the aluminum plate ( 10 ) in which a plurality of rectangular through holes ( 21 ) are formed in a staggered arrangement, and the through holes ( 21 ) serve as stress-absorbing spaces.
  • the through holes ( 21 ) are formed in at least a portion of the aluminum plate ( 10 ) which corresponds to a perimetric portion of the insulating substrate ( 3 ); i.e., in the entire region of the aluminum plate ( 10 ), including a perimetric portion corresponding to the perimetric portion of the insulating substrate ( 3 ).
  • the percentage of the total area of all of the through holes ( 21 ) to the area of one side of the aluminum plate ( 10 ) is 3% to 50%.
  • a stress relaxation member ( 22 ) shown in FIG. 5 is formed of the aluminum plate ( 10 ) in which a plurality of the circular through holes ( 9 ) are formed only in a perimetric portion; i.e., in a portion corresponding to a perimetric portion of the insulating substrate ( 3 ). Also, in this case, preferably, as in the case of the stress relaxation member ( 4 ) shown in FIG. 2 , the percentage of the total area of all of the through holes ( 9 ) to the area of one side of the aluminum plate ( 10 ) is 3% to 50%.
  • a stress relaxation member ( 23 ) shown in FIG. 6 is formed of the aluminum plate ( 10 ) in which a plurality of the circular through holes ( 9 ) are formed in two inner and outer rows only in a perimetric portion; i.e., in a portion corresponding to a perimetric portion of the insulating substrate ( 3 ). Also, in this case, preferably, as in the case of the stress relaxation member ( 4 ) shown in FIG. 2 , the percentage of the total area of all of the through holes ( 9 ) to the area of one side of the aluminum plate ( 10 ) is 3% to 50%.
  • the rectangular through holes ( 21 ) may be formed in place of the circular through holes ( 9 ). In either case, the through holes ( 9 ) and ( 21 ) serve as stress-absorbing spaces.
  • a stress relaxation member ( 25 ) shown in FIG. 7 is formed of the aluminum plate ( 10 ) in which a plurality of spherical recesses ( 26 ) are formed in a staggered arrangement on one side, and the recesses ( 26 ) serve as stress-absorbing spaces.
  • a stress relaxation member ( 30 ) shown in FIG. 8 is formed of the aluminum plate ( 10 ) in which a plurality of the spherical recesses ( 26 ) are formed in vertical and horizontal rows on opposite sides, and the recesses ( 26 ) serve as stress-absorbing spaces.
  • the recesses ( 26 ) formed on one side of the aluminum plate ( 10 ) differ from the recesses ( 26 ) formed on the other side in position as viewed in plane.
  • a stress relaxation member ( 31 ) shown in FIG. 9 is formed of the aluminum plate ( 10 ) in which a plurality of truncated-cone-shaped recesses ( 32 ) are formed in a staggered arrangement on one side, and the recesses ( 32 ) serve as stress-absorbing spaces.
  • a stress relaxation member ( 34 ) shown in FIG. 10 is formed of the aluminum plate ( 10 ) in which a plurality of the truncated-cone-shaped recesses ( 32 ) are formed in vertical and horizontal rows on opposite sides, and the recesses ( 32 ) serve as stress-absorbing spaces.
  • the recesses ( 32 ) formed on one side of the aluminum plate ( 10 ) differ from the recesses ( 32 ) formed on the other side in position as viewed in plane.
  • the recesses ( 26 ) and ( 32 ) are formed in the entire region of the aluminum plate ( 10 ), including at least a perimetric portion corresponding to a perimetric portion of the insulating substrate ( 3 ).
  • the recesses ( 26 ) and ( 32 ) may be formed only in the perimetric portion corresponding to the perimetric portion of the insulating substrate ( 3 ).
  • the recesses ( 26 ) and ( 32 ) preferably have a circle-equivalent diameter; i.e., a diameter, of 1 mm to 4 mm.
  • the percentage of the total area of openings of all of the recesses ( 26 ) or ( 32 ) to an area of the side of the aluminum plate ( 10 ) on which the recesses ( 26 ) or ( 32 ) are formed is 3% to 50%.
  • a stress relaxation member ( 36 ) shown in FIG. 11 is formed of the aluminum plate ( 10 ) in which a plurality of quadrangular-pyramid-shaped recesses ( 37 ) are formed in a staggered arrangement on one side, and the recesses ( 37 ) serve as stress-absorbing spaces.
  • a stress relaxation member ( 38 ) shown in FIG. 12 is formed of the aluminum plate ( 10 ) in which a plurality of the quadrangular-pyramid-shaped recesses ( 37 ) are formed in vertical and horizontal rows on opposite sides, and the recesses ( 37 ) serve as stress-absorbing spaces.
  • the recesses ( 37 ) formed on one side of the aluminum plate ( 10 ) differ from the recesses ( 37 ) formed on the other side in position as viewed in plane.
  • a stress relaxation member ( 40 ) shown in FIG. 13 is formed of the aluminum plate ( 10 ) in which a plurality of rectangular-parallelepiped-shaped recesses ( 41 ) are formed in vertical and horizontal rows on one side, and the recesses ( 41 ) serve as stress-absorbing spaces.
  • the adjacent recesses ( 41 ) in each of the vertical rows are arranged such that their longitudinal directions are oriented 90 degrees different from each other.
  • the adjacent recesses ( 41 ) in each of the horizontal rows are arranged such that their longitudinal directions are oriented 90 degrees different from each other.
  • a stress relaxation member ( 42 ) shown in FIG. 14 is formed of the aluminum plate ( 10 ) in which a plurality of the rectangular-parallelepiped-shaped recesses ( 41 ) are formed in a staggered arrangement on opposite sides, and the recesses ( 41 ) serve as stress-absorbing spaces.
  • the recesses ( 41 ) formed on one side of the aluminum plate ( 10 ) differ from the recesses ( 41 ) formed on the other side in position as viewed in plane.
  • the recesses ( 41 ) formed on a first side of the aluminum plate ( 10 ) are arranged such that their longitudinal directions are oriented in the same direction, and the recesses ( 41 ) formed on a second side of the aluminum plate ( 10 ) are arranged such that their longitudinal directions are oriented perpendicularly to those of the recesses ( 41 ) formed on the first side.
  • a stress relaxation member ( 45 ) shown in FIG. 15 is formed of the aluminum plate ( 10 ) in which a plurality of through holes ( 46 ) and ( 47 ) are formed, and the through holes ( 46 ) and ( 47 ) serve as stress-absorbing spaces.
  • a plurality of slit-like through holes ( 46 ) are formed on a plurality of diagonal lines which are in parallel with one another and intersect with two sides that define each of the corner portions, while the slit-like through holes ( 46 ) are spaced apart from one another along the diagonal lines.
  • a plurality of arcuate through holes ( 47 ) are formed on a plurality of concentric circles while being circumferentially spaced apart from one another. Also, in this stress relaxation member ( 45 ), preferably, the percentage of the total area of all of the through holes ( 46 ) and ( 47 ) to the area of one side of the aluminum plate ( 10 ) is 3% to 50%.
  • a stress relaxation member ( 50 ) shown in FIG. 16 is formed of the aluminum plate ( 10 ) in which a plurality of groove-like recesses ( 51 ) are formed on one side, and the recesses ( 51 ) serve as stress-absorbing spaces. Some recesses ( 51 ) assume the form of connected letter Vs, and other recesses ( 51 ) assume the form of a letter V.
  • a stress relaxation member ( 53 ) shown in FIG. 17 is formed of the aluminum plate ( 10 ) in which a plurality of V-groove-like recesses ( 54 ) and ( 55 ) are formed on opposite sides, and the recesses ( 54 ) and ( 55 ) serve as stress-absorbing spaces.
  • the recesses ( 54 ) formed on a first side of the aluminum plate ( 10 ) extend along the longitudinal direction of the aluminum plate ( 10 ) and are spaced apart from one another in the lateral direction of the aluminum plate ( 10 ).
  • the recesses ( 55 ) formed on a second side of the aluminum plate ( 10 ) extend along the lateral direction of the aluminum plate ( 10 ) and are spaced apart from one another in the longitudinal direction of the aluminum plate ( 10 ).
  • the total of the depth of the recesses ( 54 ) formed on the first side of the aluminum plate ( 10 ) and the depth of the recesses ( 55 ) formed on the second side of the aluminum plate ( 10 ) is less than the thickness of the aluminum plate ( 10 ).
  • a stress relaxation member ( 57 ) shown in FIG. 18 is formed of the aluminum plate ( 10 ) in which a plurality of V-groove-like recesses ( 58 ) and ( 59 ) are formed on opposite sides and in which a plurality of through holes ( 60 ) are formed, and the recesses ( 58 ) and ( 59 ) and the through holes ( 60 ) serve as stress-absorbing spaces.
  • the recesses ( 58 ) formed on a first side of the aluminum plate ( 10 ) extend along the longitudinal direction of the aluminum plate ( 10 ) and are spaced apart from one another in the lateral direction of the aluminum plate ( 10 ).
  • the recesses ( 59 ) formed on a second side of the aluminum plate ( 10 ) extend along the lateral direction of the aluminum plate ( 10 ) and are spaced apart from one another in the longitudinal direction of the aluminum plate ( 10 ).
  • the total of the depth of the recesses ( 58 ) formed on the first side of the aluminum plate ( 10 ) and the depth of the recesses ( 59 ) formed on the second side of the aluminum plate ( 10 ) is greater than the thickness of the aluminum plate ( 10 ), whereby the through holes ( 60 ) are formed at intersections of the recesses ( 58 ) and ( 59 ).
  • the aluminum plate ( 10 ) used to form the stress relaxation members shown in FIGS. 4 to 18 is identical with that used to form the stress relaxation member ( 4 ) shown in FIG. 2 .
  • Each of the stress relaxation members shown in FIGS. 4 to 18 is brazed to the power module substrate ( 8 ) and to the heat sink ( 5 ) in a manner similar to that of the first and second embodiments.
  • a stress relaxation member ( 63 ) shown in FIG. 19 is formed of a corrugate aluminum plate ( 67 ) which includes wave crest portions ( 64 ), wave trough portions ( 65 ), and connection portions ( 66 ) each connecting the wave crest portion ( 64 ) and the wave trough portion ( 65 ), and spaces present between the adjacent connection portions ( 66 ) serve as stress-absorbing spaces.
  • a stress relaxation member ( 70 ) shown in FIG. 20 is configured as follows.
  • a plurality of the cutout portions ( 68 ) are formed at the wave crest portions ( 64 ), the wave trough portions ( 65 ), and the connection portions ( 66 ) of the corrugate aluminum plate ( 67 ) similar to that of FIG. 19 , in such a manner as to extend in a direction perpendicular to the longitudinal direction of the wave crest portions ( 64 ) and the wave trough portions ( 65 ) and to be juxtaposed to one another in the lateral direction of the corrugate aluminum plate ( 67 ). Accordingly, the corrugate aluminum plate ( 67 ) is divided into a plurality of portions except for its opposite end portions.
  • a stress relaxation member ( 72 ) shown in FIG. 21 is configured as follows.
  • a plurality of; herein, two, corrugate aluminum plates ( 67 ) in which no cutout is formed are disposed in the longitudinal direction of the wave crest portions ( 64 ) and the wave trough portions ( 65 ) while being spaced apart from one another. No particular limitation is imposed on the number of the corrugate aluminum plates ( 67 ).
  • the adjacent corrugate aluminum plates ( 67 ) are disposed such that the wave crest portions ( 64 ) and the wave trough portions ( 65 ) of one corrugate aluminum plate ( 67 ) are shifted from those of the other corrugate aluminum plate ( 67 ) in the lateral direction of the wave crest portions ( 64 ) and the wave trough portions ( 65 ).
  • the stress relaxation member ( 72 ) shown in FIG. 21 may be configured as follows: the adjacent corrugate aluminum plates ( 67 ) are disposed such that the wave crest portions ( 64 ) and the wave trough portions ( 65 ) of one corrugate aluminum plate ( 67 ) coincide with those of the other corrugate aluminum plate ( 67 ) with respect to the lateral direction of the wave crest portions ( 64 ) and the wave trough portions ( 65 ).
  • the thickness of the corrugate aluminum plate ( 67 ) is preferably 0.05 mm to 1 mm.
  • the corrugate aluminum plate ( 67 ) is formed of a pure aluminum having a purity of 99% or higher, desirably 99.5% or higher, which exhibits high thermal conductivity and high deformability induced by a drop in strength caused by brazing heat.
  • each of the stress relaxation members ( 63 ), ( 70 ), and ( 72 ) shown in FIGS. 19 to 21 is brazed to the power module substrate ( 8 ) and to the heat sink ( 5 ).
  • the heat radiator of the present invention includes an insulating substrate whose first side serves as a heat-generating-element-mounting side and a heat sink fixed to a second side of the insulating substrate, and is preferably used for radiating, from the heat sink, heat generated from a heat-generating-element, such as a semiconductor device, mounted on the insulating substrate.
  • FIG. 1 Vertical sectional view of a portion of a power module which uses a heat radiator, showing a first embodiment of a heat radiator according to the present invention.
  • FIG. 2 Perspective view showing a stress relaxation member used in the heat radiator of FIG. 1 .
  • FIG. 3 View equivalent to FIG. 1 , showing a second embodiment of the heat radiator according to the present invention.
  • FIG. 4 Perspective view showing a first modified embodiment of the stress relaxation member.
  • FIG. 5 Partially cutaway perspective view showing a second modified embodiment of the stress relaxation member.
  • FIG. 6 Partially cutaway perspective view showing a third modified embodiment of the stress relaxation member.
  • FIG. 7 Partially cutaway perspective view showing a fourth modified embodiment of the stress relaxation member.
  • FIG. 8 Partially cutaway perspective view showing a fifth modified embodiment of the stress relaxation member.
  • FIG. 9 Partially cutaway perspective view showing a sixth modified embodiment of the stress relaxation member.
  • FIG. 10 Partially cutaway perspective view showing a seventh modified embodiment of the stress relaxation member.
  • FIG. 11 Partially cutaway perspective view showing an eighth modified embodiment of the stress relaxation member.
  • FIG. 12 Partially cutaway perspective view showing a ninth modified embodiment of the stress relaxation member.
  • FIG. 13 Perspective view showing a tenth modified embodiment of the stress relaxation member.
  • FIG. 14 Perspective view showing an eleventh modified embodiment of the stress relaxation member.
  • FIG. 15 Perspective view showing a twelfth modified embodiment of the stress relaxation member.
  • FIG. 16 Perspective view showing a thirteenth modified embodiment of the stress relaxation member.
  • FIG. 17 Perspective view showing a fourteenth modified embodiment of the stress relaxation member.
  • FIG. 18 Perspective view showing a fifteenth modified embodiment of the stress relaxation member.
  • FIG. 19 Perspective view showing a sixteenth modified embodiment of the stress relaxation member.
  • FIG. 20 Perspective view showing a seventeenth modified embodiment of the stress relaxation member.
  • FIG. 21 Perspective view showing an eighteenth modified embodiment of the stress relaxation member.

Abstract

A heat radiator 1 includes an insulating substrate 3 whose first side serves as a heat-generating-element-mounting side, and a heat sink 5 fixed to a second side of the insulating substrate 3. A metal layer 7 is formed on a side of the insulating substrate 3 opposite the heat-generating-element-mounting side. A stress relaxation member 4 intervenes between the metal layer 7 of the insulating substrate 3 and the heat sink 5. The stress relaxation member 4 is formed of an aluminum plate 10 having a plurality of through holes 9 formed therein, and the through holes 9 serve as stress-absorbing spaces. The stress relaxation member 4 is brazed to the metal layer 7 of the insulating substrate 3 and to the heat sink 5. This heat radiator 1 is low in material cost and exhibits excellent heat radiation performance.

Description

    TECHNICAL FIELD
  • The present invention relates to a heat radiator, and more particularly to a heat radiator which includes an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate and which radiates, from the heat sink, heat generated from a heat-generating-element, such as a semiconductor device, mounted on the insulating substrate.
  • The term “aluminum” as used herein and in the appended claims encompasses aluminum alloys in addition to pure aluminum, except for the case where “pure aluminum” is specified.
  • BACKGROUND ART
  • In a power module which uses a semiconductor device, such as an IGBT (Insulated Gate Bipolar Transistor), the semiconductor device must be held at a predetermined temperature or lower by means of efficiently radiating heat generated therefrom. Conventionally, in order to meet the requirement, a heat radiator is used. The heat radiator includes an insulating substrate which is formed of a ceramic, such as Al2O3 or AlN, and whose first side serves as a heat-generating-element-mounting side, and a heat sink which is formed of a high-thermal-conduction metal, such as aluminum or copper (including copper alloys; hereinafter, the same is applied), and is soldered to a second side of the insulating substrate. A semiconductor device is soldered to the heat-generating-element-mounting side of the insulating substrate of the heat radiator, thereby forming the power module.
  • A power module used in, for example, a hybrid car must maintain the heat radiation performance of a heat radiator over a long term. The above-mentioned conventional heat radiator involves the following problem. Under some working conditions, thermal stress arises from a difference in thermal expansion coefficient between the insulating substrate and the heat sink and causes cracking in the insulating substrate, cracking in a solder layer which bonds the insulating substrate and the heat sink together, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Such cracking or warpage impairs heat radiation performance.
  • A proposed heat radiator in which the above problem is solved includes an insulating substrate whose first side serves as a heat-generating-element-mounting side, a heat radiation member which is soldered to a second side of the insulating substrate, and a heat sink which is screwed on the heat radiation member. The heat radiation member includes a pair of platelike heat-radiation-member bodies formed of a high-thermal-conduction material, such as aluminum or copper, and a low-thermal-expansion material, such as an Invar alloy, intervening between the platelike heat-radiation-member bodies. (Refer to Patent Document 1)
  • However, the heat radiator described in Patent Document 1 must use the heat radiation member formed of a high-thermal-conduction material and a low-thermal-expansion material; thus, material cost is increased. Furthermore, since the heat radiation member and the heat sink are merely screwed together, thermal conduction therebetween is insufficient, resulting in a failure to provide sufficient heat radiation performance.
  • Patent Document 1: Japanese Patent Application Laid-Open (kokai) No. 2004-153075
  • DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
  • An object of the present invention is to solve the above problem and to provide a heat radiator whose material cost is low and which exhibits excellent heat radiation performance.
  • Means for solving the Problems
  • To achieve the above object, the present invention comprises the following modes.
  • 1) A heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
  • wherein a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the second side of the insulating substrate and the heat sink, and the stress relaxation member is metal-bonded to the insulating substrate and to the heat sink.
  • 2) A heat radiator according to par. 1), wherein the stress relaxation member is brazed to the insulating substrate and to the heat sink.
  • 3) A heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
  • wherein a metal layer is formed on a side of the insulating substrate opposite the heat-generating-element-mounting side; a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the metal layer and the heat sink; and the stress relaxation member is metal-bonded to the metal layer of the insulating substrate and to the heat sink.
  • 4) A heat radiator according to par. 3), wherein the stress relaxation member is brazed to the metal layer of the insulating substrate and to the heat sink.
  • 5) A heat radiator according to any one of pars. 1) to 4), wherein the insulating substrate is formed of a ceramic.
  • 6) A heat radiator according to any one of pars. 1) to 5), wherein the stress relaxation member is formed of an aluminum plate having a plurality of through holes formed therein, and the through holes serve as the stress-absorbing spaces.
  • 7) A heat radiator according to par. 6), wherein the through holes are formed in at least a portion of the aluminum plate which corresponds to a perimetric portion of the insulating substrate.
  • 8) A heat radiator according to par. 6) or 7), wherein the through holes are of a non-angular shape and have a circle-equivalent diameter of 1 mm to 4 mm.
  • The term “non-angular” as used herein and in the appended claims refers to a shape which does not have a mathematically defined acute angle, obtuse angle, or right angle; for example, a circle, an ellipse, an elongated circle, or a substantially polygonal shape whose corners are rounded. The term “circle-equivalent diameter” as used herein and in the appended claims refers to the diameter of a circle whose area is equal to that of a shape in question.
  • In the heat radiator of par. 8), the through holes have a circle-equivalent diameter of 1 mm to 4 mm, for the following reason. If the circle-equivalent diameter of the through holes is too small, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the circle-equivalent diameter of the through holes is too large, thermal conductivity may drop. Particularly, in the case where the stress relaxation member is brazed to the insulating substrate and to the heat sink, if the circle-equivalent diameter is too small, the through holes may be filled with a brazing material, with the potential result that the stress relaxation member is not deformed at all even when thermal stress arises in the heat radiator.
  • 9) A heat radiator according to any one of pars. 6) to 8), wherein a percentage of a total area of all of the through holes to an area of one side of the aluminum plate is 3% to 50%.
  • In the heat radiator of par. 9), the percentage of the total area of all of the through holes to the area of one side of the aluminum plate is 3% to 50%, for the following reason. If the percentage is too low, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the percentage is too high, thermal conductivity may drop.
  • 10) A heat radiator according to any one of pars. 1) to 5), wherein the stress relaxation member is formed of an aluminum plate having a plurality of recesses formed on at least either side, and the recesses serve as the stress-absorbing spaces.
  • 11) A heat radiator according to par. 10), wherein the recesses are formed on at least a portion of the aluminum plate which corresponds to a perimetric portion of the insulating substrate.
  • 12) A heat radiator according to par. 10) or 11), wherein the openings of the recesses are of a non-angular shape and have a circle-equivalent diameter of 1 mm to 4 mm.
  • In the heat radiator of par. 12), the openings of the recesses have a circle-equivalent diameter of 1 mm to 4 mm, for the following reason. If the circle-equivalent diameter of the openings of the recesses is too small, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the circle-equivalent diameter of the openings of the recesses is too large, thermal conductivity may drop. Particularly, in the case where the stress relaxation member is brazed to the insulating substrate and to the heat sink, if the circle-equivalent diameter is too small, the recesses may be filled with a brazing material, with the potential result that the stress relaxation member is not deformed at all even when thermal stress arises in the heat radiator.
  • 13) A heat radiator according to any one of pars. 10) to 12), wherein a percentage of a total area of openings of all of the recesses to an area of a side of the aluminum plate on which the recesses are formed is 3% to 50%.
  • In the heat radiator of par. 13), the percentage of the total area of openings of all of the through holes to the area of the side of the aluminum plate on which the recesses are formed is 3% to 50%, for the following reason. If the percentage is too low, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the percentage is too high, thermal conductivity may drop.
  • 14) A heat radiator according to any one of pars. 1) to 5), wherein the stress relaxation member is formed of an aluminum plate having a plurality of recesses formed on at least either side and a plurality of through holes formed therein, and the recesses and through holes serve as the stress-absorbing spaces.
  • 15) A heat radiator according to any one of pars. 6) to 14), wherein the aluminum plate used to form the stress relaxation member has a thickness of 0.3 mm to 3 mm.
  • In the heat radiator of par. 15), the aluminum plate used to form the stress relaxation member has a thickness of 0.3 mm to 3 mm, for the following reason. If the aluminum plate is too thin, deformation of the stress relaxation member may become insufficient when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, with the potential result that the stress relaxation member fails to exhibit sufficient stress-relaxing performance. If the aluminum plate is too thick, thermal conductivity may drop.
  • 16) A heat radiator according to any one of pars. 1) to 5), wherein the stress relaxation member is formed of a corrugate aluminum plate comprising wave crest portions, wave trough portions, and connection portions each connecting the wave crest portion and the wave trough portion, and spaces present between the adjacent connection portions serve as the stress-absorbing spaces.
  • 17) A heat radiator according to par. 16), wherein a thickness of the corrugate aluminum plate is 0.05 mm to 1 mm. In the heat radiator of par. 17), the thickness of the corrugate aluminum plate is 0.05 mm to 1 mm, for the following reason. If the corrugate aluminum plate is too thin, difficulty is involved in processing for obtaining the corrugate aluminum plate, and buckling may arise. If the corrugate aluminum plate is too thick, difficulty is involved in processing for obtaining the corrugate aluminum plate. In either case, difficulty is involved in finishing for obtaining a predetermined shape.
  • 18) A heat radiator according to par. 16) or 17), wherein at least one cutout portion extending in a direction perpendicular to a longitudinal direction of the wave crest portions and the wave trough portions is formed at the wave crest portions, the wave trough portions, and the connection portions of the corrugate aluminum plate.
  • 19) A heat radiator according to par. 16) or 17), wherein a plurality of the corrugate aluminum plates are disposed in a longitudinal direction of the wave crest portions and the wave trough portions while being spaced apart from one another.
  • 20) A heat radiator according to par. 19), wherein the adjacent corrugate aluminum plates are disposed such that the wave crest portions and the wave trough portions of one corrugate aluminum plate are shifted from those of the other corrugate aluminum plate in a lateral direction of the wave crest portions and the wave trough portions. 21) A heat radiator according to any one of pars. 6) to 20), wherein the aluminum plate is formed of pure aluminum having a purity of 99% or higher.
  • 22) A heat radiator according to any one of pars. 6) to 21), wherein the stress relaxation member is formed of a brazing sheet which comprises a core, and brazing-material layers covering respective opposite sides of the core, and the stress relaxation member is brazed to the insulating substrate or the metal layer of the insulating substrate and to the heat sink by use of the brazing-material layers of the brazing sheet.
  • 23) A heat radiator according to any one of pars. 6) to 21), wherein the stress relaxation member is brazed to the insulating substrate or the metal layer of the insulating substrate and to the heat sink by use of a sheetlike brazing material.
  • 24) A power module comprising a heat radiator according to any one of pars. 1) to 23), and a semiconductor device mounted on the insulating substrate of the heat radiator.
  • Effects of the Invention
  • According to the heat radiator of par. 1), the stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the insulating substrate and the heat sink, and the stress relaxation member is metal-bonded to the insulating substrate and to the heat sink. Thus, excellent thermal conductivity is established between the insulating substrate and the heat sink, thereby improving heat radiation performance for radiating heat generated by a semiconductor device mounted on the insulating substrate. Furthermore, even when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, the stress relaxation member is deformed by the effect of the stress-absorbing space; thus, the thermal stress is relaxed, thereby preventing cracking in the insulating substrate, cracking in a bond zone between the insulating substrate and the stress relaxation member, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Accordingly, heat radiation performance is maintained over a long term. Also, use of the stress relaxation member described in any one of pars. 6) to 20) lowers cost of the stress relaxation member, thereby lowering material cost for the heat radiator.
  • According to the heat radiator of par. 2), the stress relaxation member is brazed to the insulating substrate and to the heat sink. Thus, bonding of the stress relaxation member and the insulating substrate and bonding of the stress relaxation member and the heat sink can be performed simultaneously, thereby improving workability in fabrication of the heat radiator. According to the heat radiator described in Patent Document 1, after the insulating substrate and the heat radiation member are soldered together, the heat radiation member and the heat sink must be screwed together; therefore, workability in fabrication of the heat radiator is poor.
  • According to the heat radiator of par. 3), the metal layer is formed on a side of the insulating substrate opposite the heat-generating-element-mounting side; the stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the metal layer and the heat sink; and the stress relaxation member is metal-bonded to the metal layer of the insulating substrate and to the heat sink. Thus, excellent thermal conductivity is established between the insulating substrate and the heat sink, thereby improving heat radiation performance for radiating heat generated by a semiconductor device mounted on the insulating substrate. Furthermore, even when thermal stress arises in the heat radiator from a difference in thermal expansion coefficient between the insulating substrate and the heat sink, the stress relaxation member is deformed by the effect of the stress-absorbing space; thus, the thermal stress is relaxed, thereby preventing cracking in the insulating substrate, cracking in a bond zone between the metal layer of the insulating substrate and the stress relaxation member, or warpage of a bond surface of the heat sink bonded to the insulating substrate. Accordingly, heat radiation performance is maintained over a long term. Also, use of the stress relaxation member described in any one of pars. 6) to 20) lowers cost of the stress relaxation member, thereby lowering material cost for the heat radiator.
  • According to the heat radiator of par. 4), the stress relaxation member is brazed to the metal layer of the insulating substrate and to the heat sink. Thus, bonding of the stress relaxation member and the metal layer of the insulating substrate and bonding of the stress relaxation member and the heat sink can be performed simultaneously, thereby improving workability in fabrication of the heat radiator. According to the heat radiator described in Patent Document 1, after the insulating substrate and the heat radiation member are soldered together, the heat radiation member and the heat sink must be screwed together; therefore, workability in fabrication of the heat radiator is poor.
  • With the heat radiator of any one of pars. 6) to 20), cost of the stress relaxation member is lowered, thereby lowering material cost for the heat radiator.
  • According to the heat radiator of any one of pars. 6) to 9), the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of the through holes; thus, thermal stress is relaxed.
  • The heat radiator of par. 7) exhibits excellent thermal-stress relaxation effect. A largest thermal stress or strain is likely to arise in a perimetric portion of the insulating substrate of the heat radiator. However, by virtue of the configuration of par. 7), a portion of the aluminum plate corresponding to the perimetric portion of the insulating substrate is apt to be deformed by the effect of the through holes, thereby relaxing the thermal stress.
  • According to the heat radiator of par. 10), the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of the recesses, thereby relaxing the thermal stress.
  • The heat radiator of par. 11) exhibits excellent thermal-stress relaxation effect. A largest thermal stress or strain is likely to arise in a perimetric portion of the insulating substrate of the heat radiator. However, by virtue of the configuration of par. 11), a portion of the aluminum plate corresponding to the perimetric portion of the insulating substrate is apt to be deformed by the effect of the recesses, thereby relaxing the thermal stress.
  • According to the heat radiator of par. 14), the stress relaxation member is deformed by the effect of the stress-absorbing spaces in the form of recesses and through holes, thereby relaxing the thermal stress.
  • According to the heat radiator of par. 16) or 17), the stress relaxation member is deformed by the effect of the stress-absorbing spaces of the corrugate aluminum plate, thereby relaxing the thermal stress.
  • According to the heat radiator of par. 18), the cutout portion enhances the thermal-stress relaxation effect.
  • According to the heat radiator of par. 19), the spaces between the adjacent corrugate aluminum plates enhance the thermal-stress relaxation effect.
  • According to the heat radiator of par. 20), the thermal-stress relaxation effect is enhanced in different directions.
  • According to the heat radiator of par. 21), wettability of a molten brazing material on the stress relaxation member becomes excellent when the stress relaxation member and the insulating substrate or the metal layer of the insulating substrate are to be brazed together and when the stress relaxation member and the heat sink are to be brazed together, thereby improving brazing workability. Furthermore, when brazing heat causes a drop in the strength of the stress relaxation member and generation of thermal stress in the heat radiator, the stress relaxation member is apt to be deformed, thereby yielding excellent stress relaxation effect.
  • BEST MODE FOR CARRYING OUT THE INVENTION
  • Embodiments of the present invention will next be described with reference to the drawings. The upper and lower sides of FIG. 1 will be referred to as “upper” and “lower,” respectively. In all the drawings, like features or parts are denoted by like reference numerals, and repeated description thereof is omitted.
  • FIG. 1 shows a portion of a power module which uses a heat radiator of a first embodiment of the present invention. FIG. 2 shows a stress relaxation member.
  • In FIG. 1, the power module includes a heat radiator (1) and a semiconductor device (2); for example, an IGBT, mounted on the heat radiator (1).
  • The heat radiator (1) includes an insulating substrate (3) which is formed of a ceramic and whose upper side serves as a heat-generating-element-mounting side; a stress relaxation member (4) bonded to the lower side of the insulating substrate (3); and a heat sink (5) bonded to the lower side of the stress relaxation member (4).
  • The insulating substrate (3) may be formed of any ceramic so long as it satisfies requirements for insulating characteristics, thermal conductivity, and mechanical strength. For example, Al2O3 or AlN is used to form the insulating substrate (3). A circuit layer (6) is formed on the upper surface of the insulating substrate (3), and the semiconductor device (2) is soldered onto the circuit layer (6). The solder layer is not shown. The circuit layer (6) is formed of a metal having excellent electrical conductivity, such as aluminum or copper. Preferably, the circuit layer (6) is formed of a pure aluminum having high purity, which exhibits high electrical conductivity, high deformability, and excellent solderability in relation to a semiconductor device. A metal layer (7) is formed on the lower surface of the insulating substrate (3). The stress relaxation member (4) is brazed to the metal layer (7). The brazing-material layer is not shown. Preferably, the metal layer (7) is formed of a metal having excellent thermal conductivity, such as aluminum or copper. Preferably, the metal layer (7) is formed of a pure aluminum having high purity, which exhibits high thermal conductivity, high deformability, and excellent wettability in relation to a molten brazing material. The insulating substrate (3), the circuit layer (6), and the metal layer (7) constitute a power module substrate (8).
  • The stress relaxation member (4) is formed of a high-thermal-conduction material and has stress-absorbing spaces. As shown in FIG. 2, the stress relaxation member (4) is formed of an aluminum plate (10) in which a plurality of non-angular holes; herein, circular through holes (9), are formed in a staggered arrangement, and the through holes (9) serve as stress-absorbing spaces. The circular through holes (9) are formed in at least a portion of the aluminum plate (10) which corresponds to a perimetric portion of the insulating substrate (3); i.e., in the entire region of the aluminum plate (10), including a perimetric portion corresponding to the perimetric portion of the insulating substrate (3). Preferably, the aluminum plate (10) is formed of a pure aluminum having a purity of 99% or higher, desirably 99.5% or higher, which exhibits high thermal conductivity, high deformability induced by a drop in strength caused by brazing heat, and excellent wettability in relation to a molten brazing material. The thickness of the aluminum plate (10) is preferably 0.3 mm to 3 mm, more preferably 0.3 mm to 1.5 mm. The circle-equivalent diameter of the through holes (9) (here, the diameter of the through holes (9), because the through holes (9) are circular) is preferably 1 mm to 4 mm. Preferably, the percentage of the total area of all of the through holes (9) to the area of one side of the aluminum plate (10) is 3% to 50%.
  • Preferably, the heat sink (5) assumes a flat, hollow shape in which a plurality of cooling-fluid channels (11) are formed in parallel, and is formed of aluminum, which exhibits excellent thermal conductivity and is light. A cooling fluid may be either liquid or gas.
  • Brazing between the stress relaxation member (4) and the metal layer (7) of the power module substrate (8) and brazing between the stress relaxation member (4) and the heat sink (5) are performed, for example, as follows. The stress relaxation member (4) is formed of an aluminum brazing sheet which is composed of a core formed of pure aluminum, and aluminum brazing-material layers covering respective opposite sides of the core. Examples of an aluminum brazing-material include an Al—Si alloy and an Al—Si—Mg alloy. Preferably, the thickness of the aluminum brazing-material layer is about 10 μm to 200 μm. When the thickness is too small, lack of supply of the brazing material arises, potentially causing defective brazing. When the thickness is too large, excess supply of the brazing material arises, potentially causing generation of voids and a drop in thermal conductivity.
  • Next, the power module substrate (8), the stress relaxation member (4), and the heat sink (5) are arranged in layers and restrained together by use of an appropriate jig to thereby apply an appropriate load to bond surfaces. The resultant assembly is heated to 570° C. to 600° C. in a vacuum or an inert gas atmosphere. Thus, brazing of the stress relaxation member (4) and the metal layer (7) of the power module substrate (8) and brazing of the stress relaxation member (4) and the heat sink (5) are performed simultaneously.
  • Alternatively, brazing of the stress relaxation member (4) and the metal layer (7) of the power module substrate (8) and brazing of the stress relaxation member (4) and the heat sink (5) may performed as follows. The stress relaxation member (4) is formed of a bare material of the above-mentioned pure aluminum. The power module substrate (8), the stress relaxation member (4), and the heat sink (5) are arranged in layers. In this arrangement, a sheetlike aluminum brazing-material of, for example, an Al—Si alloy or an Al—Si—Mg alloy intervenes between the stress relaxation member (4) and the metal layer (7) of the power module substrate (8) and between the stress relaxation member (4) and the heat sink (5). Preferably, the thickness of the sheetlike aluminum brazing-material is about 10 μm to 200 μm. When the thickness is too small, lack of supply of the brazing material arises, potentially causing defective brazing. When the thickness is too large, excess supply of the brazing material arises, potentially causing generation of voids and a drop in thermal conductivity. Subsequently, brazing is performed as in the above-mentioned case of use of the aluminum brazing sheet. Thus, brazing of the stress relaxation member (4) and the metal layer (7) of the power module substrate (8) and brazing of the stress relaxation member (4) and the heat sink (5) are performed simultaneously.
  • FIG. 3 shows a second embodiment of the heat radiator according to the present invention.
  • In the case of a heat radiator (15) shown in FIG. 3, the metal layer (7) is not formed on the lower surface of the insulating substrate (3) of the power module substrate (8); i.e., the stress relaxation member (4) is directly brazed to the insulating substrate (3). This brazing is performed in a manner similar to that of the first embodiment described above.
  • FIGS. 4 to 21 show modified embodiments of the stress relaxation member.
  • A stress relaxation member (20) shown in FIG. 4 is formed of the aluminum plate (10) in which a plurality of rectangular through holes (21) are formed in a staggered arrangement, and the through holes (21) serve as stress-absorbing spaces. The through holes (21) are formed in at least a portion of the aluminum plate (10) which corresponds to a perimetric portion of the insulating substrate (3); i.e., in the entire region of the aluminum plate (10), including a perimetric portion corresponding to the perimetric portion of the insulating substrate (3). Preferably, as in the case of the stress relaxation member (4) shown in FIG. 2, the percentage of the total area of all of the through holes (21) to the area of one side of the aluminum plate (10) is 3% to 50%.
  • A stress relaxation member (22) shown in FIG. 5 is formed of the aluminum plate (10) in which a plurality of the circular through holes (9) are formed only in a perimetric portion; i.e., in a portion corresponding to a perimetric portion of the insulating substrate (3). Also, in this case, preferably, as in the case of the stress relaxation member (4) shown in FIG. 2, the percentage of the total area of all of the through holes (9) to the area of one side of the aluminum plate (10) is 3% to 50%.
  • A stress relaxation member (23) shown in FIG. 6 is formed of the aluminum plate (10) in which a plurality of the circular through holes (9) are formed in two inner and outer rows only in a perimetric portion; i.e., in a portion corresponding to a perimetric portion of the insulating substrate (3). Also, in this case, preferably, as in the case of the stress relaxation member (4) shown in FIG. 2, the percentage of the total area of all of the through holes (9) to the area of one side of the aluminum plate (10) is 3% to 50%.
  • In the stress relaxation members (22) and (23) shown in FIGS. 5 and 6, respectively, the rectangular through holes (21) may be formed in place of the circular through holes (9). In either case, the through holes (9) and (21) serve as stress-absorbing spaces.
  • A stress relaxation member (25) shown in FIG. 7 is formed of the aluminum plate (10) in which a plurality of spherical recesses (26) are formed in a staggered arrangement on one side, and the recesses (26) serve as stress-absorbing spaces.
  • A stress relaxation member (30) shown in FIG. 8 is formed of the aluminum plate (10) in which a plurality of the spherical recesses (26) are formed in vertical and horizontal rows on opposite sides, and the recesses (26) serve as stress-absorbing spaces. The recesses (26) formed on one side of the aluminum plate (10) differ from the recesses (26) formed on the other side in position as viewed in plane.
  • A stress relaxation member (31) shown in FIG. 9 is formed of the aluminum plate (10) in which a plurality of truncated-cone-shaped recesses (32) are formed in a staggered arrangement on one side, and the recesses (32) serve as stress-absorbing spaces.
  • A stress relaxation member (34) shown in FIG. 10 is formed of the aluminum plate (10) in which a plurality of the truncated-cone-shaped recesses (32) are formed in vertical and horizontal rows on opposite sides, and the recesses (32) serve as stress-absorbing spaces. The recesses (32) formed on one side of the aluminum plate (10) differ from the recesses (32) formed on the other side in position as viewed in plane.
  • In the stress relaxation members (25), (30), (31), and (34) shown in FIGS. 7 to 10, respectively, the recesses (26) and (32) are formed in the entire region of the aluminum plate (10), including at least a perimetric portion corresponding to a perimetric portion of the insulating substrate (3). However, as in the case of the stress relaxation members (22) and (23) shown in FIGS. 5 and 6, respectively, the recesses (26) and (32) may be formed only in the perimetric portion corresponding to the perimetric portion of the insulating substrate (3). In the stress relaxation members (25), (30), (31), and (34) shown in FIGS. 7 to 10, respectively, since the openings of the recesses (26) and (32) are circular, the recesses (26) and (32) preferably have a circle-equivalent diameter; i.e., a diameter, of 1 mm to 4 mm. Preferably, the percentage of the total area of openings of all of the recesses (26) or (32) to an area of the side of the aluminum plate (10) on which the recesses (26) or (32) are formed is 3% to 50%.
  • A stress relaxation member (36) shown in FIG. 11 is formed of the aluminum plate (10) in which a plurality of quadrangular-pyramid-shaped recesses (37) are formed in a staggered arrangement on one side, and the recesses (37) serve as stress-absorbing spaces.
  • A stress relaxation member (38) shown in FIG. 12 is formed of the aluminum plate (10) in which a plurality of the quadrangular-pyramid-shaped recesses (37) are formed in vertical and horizontal rows on opposite sides, and the recesses (37) serve as stress-absorbing spaces. The recesses (37) formed on one side of the aluminum plate (10) differ from the recesses (37) formed on the other side in position as viewed in plane.
  • A stress relaxation member (40) shown in FIG. 13 is formed of the aluminum plate (10) in which a plurality of rectangular-parallelepiped-shaped recesses (41) are formed in vertical and horizontal rows on one side, and the recesses (41) serve as stress-absorbing spaces. Herein, the adjacent recesses (41) in each of the vertical rows are arranged such that their longitudinal directions are oriented 90 degrees different from each other. Similarly, the adjacent recesses (41) in each of the horizontal rows are arranged such that their longitudinal directions are oriented 90 degrees different from each other.
  • A stress relaxation member (42) shown in FIG. 14 is formed of the aluminum plate (10) in which a plurality of the rectangular-parallelepiped-shaped recesses (41) are formed in a staggered arrangement on opposite sides, and the recesses (41) serve as stress-absorbing spaces. The recesses (41) formed on one side of the aluminum plate (10) differ from the recesses (41) formed on the other side in position as viewed in plane. Also, the recesses (41) formed on a first side of the aluminum plate (10) are arranged such that their longitudinal directions are oriented in the same direction, and the recesses (41) formed on a second side of the aluminum plate (10) are arranged such that their longitudinal directions are oriented perpendicularly to those of the recesses (41) formed on the first side.
  • A stress relaxation member (45) shown in FIG. 15 is formed of the aluminum plate (10) in which a plurality of through holes (46) and (47) are formed, and the through holes (46) and (47) serve as stress-absorbing spaces. In four corner portions of the aluminum plate (10), a plurality of slit-like through holes (46) are formed on a plurality of diagonal lines which are in parallel with one another and intersect with two sides that define each of the corner portions, while the slit-like through holes (46) are spaced apart from one another along the diagonal lines. In a portion of the aluminum plate (10) other than the four corner portions, a plurality of arcuate through holes (47) are formed on a plurality of concentric circles while being circumferentially spaced apart from one another. Also, in this stress relaxation member (45), preferably, the percentage of the total area of all of the through holes (46) and (47) to the area of one side of the aluminum plate (10) is 3% to 50%.
  • A stress relaxation member (50) shown in FIG. 16 is formed of the aluminum plate (10) in which a plurality of groove-like recesses (51) are formed on one side, and the recesses (51) serve as stress-absorbing spaces. Some recesses (51) assume the form of connected letter Vs, and other recesses (51) assume the form of a letter V.
  • A stress relaxation member (53) shown in FIG. 17 is formed of the aluminum plate (10) in which a plurality of V-groove-like recesses (54) and (55) are formed on opposite sides, and the recesses (54) and (55) serve as stress-absorbing spaces. The recesses (54) formed on a first side of the aluminum plate (10) extend along the longitudinal direction of the aluminum plate (10) and are spaced apart from one another in the lateral direction of the aluminum plate (10). The recesses (55) formed on a second side of the aluminum plate (10) extend along the lateral direction of the aluminum plate (10) and are spaced apart from one another in the longitudinal direction of the aluminum plate (10). The total of the depth of the recesses (54) formed on the first side of the aluminum plate (10) and the depth of the recesses (55) formed on the second side of the aluminum plate (10) is less than the thickness of the aluminum plate (10).
  • A stress relaxation member (57) shown in FIG. 18 is formed of the aluminum plate (10) in which a plurality of V-groove-like recesses (58) and (59) are formed on opposite sides and in which a plurality of through holes (60) are formed, and the recesses (58) and (59) and the through holes (60) serve as stress-absorbing spaces. The recesses (58) formed on a first side of the aluminum plate (10) extend along the longitudinal direction of the aluminum plate (10) and are spaced apart from one another in the lateral direction of the aluminum plate (10). The recesses (59) formed on a second side of the aluminum plate (10) extend along the lateral direction of the aluminum plate (10) and are spaced apart from one another in the longitudinal direction of the aluminum plate (10). The total of the depth of the recesses (58) formed on the first side of the aluminum plate (10) and the depth of the recesses (59) formed on the second side of the aluminum plate (10) is greater than the thickness of the aluminum plate (10), whereby the through holes (60) are formed at intersections of the recesses (58) and (59).
  • The aluminum plate (10) used to form the stress relaxation members shown in FIGS. 4 to 18 is identical with that used to form the stress relaxation member (4) shown in FIG. 2. Each of the stress relaxation members shown in FIGS. 4 to 18 is brazed to the power module substrate (8) and to the heat sink (5) in a manner similar to that of the first and second embodiments.
  • A stress relaxation member (63) shown in FIG. 19 is formed of a corrugate aluminum plate (67) which includes wave crest portions (64), wave trough portions (65), and connection portions (66) each connecting the wave crest portion (64) and the wave trough portion (65), and spaces present between the adjacent connection portions (66) serve as stress-absorbing spaces. A cutout portion (68) which extends at a laterally central portion of the corrugate aluminum plate (67) in a direction perpendicular to the longitudinal direction of the wave crest portions (64) and the wave trough portions (65) is formed at the wave crest portions (64), the wave trough portions (65), and the connection portions (66). Accordingly, the corrugate aluminum plate (67) is divided into two portions except for its opposite end portions.
  • A stress relaxation member (70) shown in FIG. 20 is configured as follows. A plurality of the cutout portions (68) are formed at the wave crest portions (64), the wave trough portions (65), and the connection portions (66) of the corrugate aluminum plate (67) similar to that of FIG. 19, in such a manner as to extend in a direction perpendicular to the longitudinal direction of the wave crest portions (64) and the wave trough portions (65) and to be juxtaposed to one another in the lateral direction of the corrugate aluminum plate (67). Accordingly, the corrugate aluminum plate (67) is divided into a plurality of portions except for its opposite end portions.
  • A stress relaxation member (72) shown in FIG. 21 is configured as follows. A plurality of; herein, two, corrugate aluminum plates (67) in which no cutout is formed are disposed in the longitudinal direction of the wave crest portions (64) and the wave trough portions (65) while being spaced apart from one another. No particular limitation is imposed on the number of the corrugate aluminum plates (67). The adjacent corrugate aluminum plates (67) are disposed such that the wave crest portions (64) and the wave trough portions (65) of one corrugate aluminum plate (67) are shifted from those of the other corrugate aluminum plate (67) in the lateral direction of the wave crest portions (64) and the wave trough portions (65).
  • In some cases, the stress relaxation member (72) shown in FIG. 21 may be configured as follows: the adjacent corrugate aluminum plates (67) are disposed such that the wave crest portions (64) and the wave trough portions (65) of one corrugate aluminum plate (67) coincide with those of the other corrugate aluminum plate (67) with respect to the lateral direction of the wave crest portions (64) and the wave trough portions (65).
  • In the stress relaxation members (63), (70), and (72) shown in FIGS. 19 to 21, respectively, the thickness of the corrugate aluminum plate (67) is preferably 0.05 mm to 1 mm. As in the case of the stress relaxation member (4) shown in FIG. 2, preferably, the corrugate aluminum plate (67) is formed of a pure aluminum having a purity of 99% or higher, desirably 99.5% or higher, which exhibits high thermal conductivity and high deformability induced by a drop in strength caused by brazing heat. As in the case of the above-described first and second embodiments, each of the stress relaxation members (63), (70), and (72) shown in FIGS. 19 to 21 is brazed to the power module substrate (8) and to the heat sink (5).
  • INDUSTRIAL APPLICABILITY
  • The heat radiator of the present invention includes an insulating substrate whose first side serves as a heat-generating-element-mounting side and a heat sink fixed to a second side of the insulating substrate, and is preferably used for radiating, from the heat sink, heat generated from a heat-generating-element, such as a semiconductor device, mounted on the insulating substrate.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 Vertical sectional view of a portion of a power module which uses a heat radiator, showing a first embodiment of a heat radiator according to the present invention.
  • FIG. 2 Perspective view showing a stress relaxation member used in the heat radiator of FIG. 1.
  • FIG. 3 View equivalent to FIG. 1, showing a second embodiment of the heat radiator according to the present invention.
  • FIG. 4 Perspective view showing a first modified embodiment of the stress relaxation member.
  • FIG. 5 Partially cutaway perspective view showing a second modified embodiment of the stress relaxation member.
  • FIG. 6 Partially cutaway perspective view showing a third modified embodiment of the stress relaxation member.
  • FIG. 7 Partially cutaway perspective view showing a fourth modified embodiment of the stress relaxation member.
  • FIG. 8 Partially cutaway perspective view showing a fifth modified embodiment of the stress relaxation member.
  • FIG. 9 Partially cutaway perspective view showing a sixth modified embodiment of the stress relaxation member.
  • FIG. 10 Partially cutaway perspective view showing a seventh modified embodiment of the stress relaxation member.
  • FIG. 11 Partially cutaway perspective view showing an eighth modified embodiment of the stress relaxation member.
  • FIG. 12 Partially cutaway perspective view showing a ninth modified embodiment of the stress relaxation member.
  • FIG. 13 Perspective view showing a tenth modified embodiment of the stress relaxation member.
  • FIG. 14 Perspective view showing an eleventh modified embodiment of the stress relaxation member.
  • FIG. 15 Perspective view showing a twelfth modified embodiment of the stress relaxation member.
  • FIG. 16 Perspective view showing a thirteenth modified embodiment of the stress relaxation member.
  • FIG. 17 Perspective view showing a fourteenth modified embodiment of the stress relaxation member.
  • FIG. 18 Perspective view showing a fifteenth modified embodiment of the stress relaxation member.
  • FIG. 19 Perspective view showing a sixteenth modified embodiment of the stress relaxation member.
  • FIG. 20 Perspective view showing a seventeenth modified embodiment of the stress relaxation member.
  • FIG. 21 Perspective view showing an eighteenth modified embodiment of the stress relaxation member.

Claims (24)

1. A heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
wherein a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the insulating substrate and the heat sink, and the stress relaxation member is metal-bonded to the insulating substrate and to the heat sink.
2. A heat radiator according to claim 1, wherein the stress relaxation member is brazed to the insulating substrate and to the heat sink.
3. A heat radiator comprising an insulating substrate whose first side serves as a heat-generating-element-mounting side, and a heat sink fixed to a second side of the insulating substrate;
wherein a metal layer is formed on a side of the insulating substrate opposite the heat-generating-element-mounting side; a stress relaxation member formed of a high-thermal-conduction material and having a stress-absorbing space intervenes between the metal layer and the heat sink; and the stress relaxation member is metal-bonded to the metal layer of the insulating substrate and to the heat sink.
4. A heat radiator according to claim 3, wherein the stress relaxation member is brazed to the metal layer of the insulating substrate and to the heat sink.
5. A heat radiator according to claim 1, wherein the insulating substrate is formed of a ceramic.
6. A heat radiator according to claim 1, wherein the stress relaxation member is formed of an aluminum plate having a plurality of through holes formed therein, and the through holes serve as the stress-absorbing spaces.
7. A heat radiator according to claim 6, wherein the through holes are formed in at least a portion of the aluminum plate which corresponds to a perimetric portion of the insulating substrate.
8. A heat radiator according to claim 6, wherein the through holes are of a non-angular shape and have a circle-equivalent diameter of 1 mm to 4 mm.
9. A heat radiator according to claim 6, wherein a percentage of a total area of all of the through holes to an area of one side of the aluminum plate is 3% to 50%.
10. A heat radiator according to claim 3, wherein the stress relaxation member is formed of an aluminum plate having a plurality of recesses formed on at least either side, and the recesses serve as the stress-absorbing spaces.
11. A heat radiator according to claim 10, wherein the recesses are formed on at least a portion of the aluminum plate which corresponds to a perimetric portion of the insulating substrate.
12. A heat radiator according to claim 10, wherein openings of the recesses are of a non-angular shape and have a circle-equivalent diameter of 1 mm to 4 mm.
13. A heat radiator according to claim 10, wherein a percentage of a total area of openings of all of the recesses to an area of a side of the aluminum plate on which the recesses are formed is 3% to 50%.
14. A heat radiator according to claim 1, wherein the stress relaxation member is formed of an aluminum plate having a plurality of recesses formed on at least either side and a plurality of through holes formed therein, and the recesses and through holes serve as the stress-absorbing spaces.
15. A heat radiator according to claim 6, wherein a thickness of the aluminum plate used to form the stress relaxation member is 0.3 mm to 3 mm.
16. A heat radiator according to claim 1, wherein the stress relaxation member is formed of a corrugate aluminum plate comprising wave crest portions, wave trough portions, and connection portions each connecting the wave crest portion and the wave trough portion, and spaces present between the adjacent connection portions serve as the stress-absorbing spaces.
17. A heat radiator according to claim 16, wherein a thickness of the corrugate aluminum plate is 0.05 mm to 1 mm.
18. A heat radiator according to claim 16, wherein at least one cutout portion extending in a direction perpendicular to a longitudinal direction of the wave crest portions and the wave trough portions is formed at the wave crest portions, the wave trough portions, and the connection portions of the corrugate aluminum plate.
19. A heat radiator according to claim 16, wherein a plurality of the corrugate aluminum plates are disposed in a longitudinal direction of the wave crest portions and the wave trough portions while being spaced apart from one another.
20. A heat radiator according to claim 19, wherein the adjacent corrugate aluminum plates are disposed such that the wave crest portions and the wave trough portions of one corrugate aluminum plate are shifted from those of the other corrugate aluminum plate in a lateral direction of the wave crest portions and the wave trough portions.
21. A heat radiator according to claim 6, wherein the aluminum plate is formed of pure aluminum having a purity of 99% or higher.
22. A heat radiator according to claim 6, wherein the stress relaxation member is formed of a brazing sheet which comprises a core, and brazing-material layers covering respective opposite sides of the core, and the stress relaxation member is brazed to the insulating substrate or the metal layer of the insulating substrate and to the heat sink by use of the brazing-material layers of the brazing sheet.
23. A heat radiator according to claim 6, wherein the stress relaxation member is brazed to the insulating substrate or the metal layer of the insulating substrate and to the heat sink by use of a sheetlike brazing material.
24. A power module comprising a heat radiator according to claim 1, and a semiconductor device mounted on the insulating substrate of the heat radiator.
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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080291636A1 (en) * 2007-05-25 2008-11-27 Shogo Mori Semiconductor device
US20090147479A1 (en) * 2007-11-21 2009-06-11 Shogo Mori Heat dissipation apparatus
US20100002399A1 (en) * 2008-07-04 2010-01-07 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
US20100091463A1 (en) * 2007-04-27 2010-04-15 Isabell Buresch Cooling body
US20100326631A1 (en) * 2009-06-26 2010-12-30 Foxconn Technology Co., Ltd. Plate-type heat pipe
US20110061849A1 (en) * 2009-09-16 2011-03-17 Esw Gmbh Device for cooling semi-conductors
US20120262883A1 (en) * 2011-04-18 2012-10-18 Showa Denko K. K. Heat radiator and manufacturing method thereof
US20120281167A1 (en) * 2011-05-06 2012-11-08 Funai Electric Co., Ltd. Radiator Plate
US20130056176A1 (en) * 2011-08-26 2013-03-07 Mikros Manufacturing, Inc. Heat Exchanger with Controlled Coefficient of Thermal Expansion
US20140000106A1 (en) * 2009-05-15 2014-01-02 Tong Hsing Electronic Industries, Ltd. Circuit board module and method of making the same
US20140361425A1 (en) * 2010-06-30 2014-12-11 Denso Corporation Semiconductor device including cooler
US8933557B2 (en) 2009-08-10 2015-01-13 Fuji Electric Co., Ltd. Semiconductor module and cooling unit
US20150167595A1 (en) * 2013-12-16 2015-06-18 Hyundai Motor Company Cooling system for diesel engine having turbocharger
US20150289375A1 (en) * 2012-11-01 2015-10-08 Kabushiki Kaisha Toyota Jidoshokki Module for facilitating positioning of electronic components
US9379038B2 (en) 2010-04-28 2016-06-28 Kabushiki Kaisha Toyota Jidoshokki Heat dissipation device and semiconductor device
US20160229689A1 (en) * 2015-02-11 2016-08-11 Analog Devices, Inc. Packaged Microchip with Patterned Interposer
US20160273842A1 (en) * 2015-03-16 2016-09-22 Dana Canada Corporation Heat exchangers with plates having surface patterns for enhancing flatness and methods for manufacturing same
JP2017120888A (en) * 2015-12-24 2017-07-06 アイシン精機株式会社 Insulation substrate
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device
US10490482B1 (en) * 2018-12-05 2019-11-26 Toyota Motor Engineering & Manufacturing North America, Inc. Cooling devices including jet cooling with an intermediate mesh and methods for using the same
US10510640B2 (en) 2015-01-26 2019-12-17 Miitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
US10741995B2 (en) * 2016-09-27 2020-08-11 Jenoptik Optical Systems Gmbh Optical and optoelectronic assembly and method for the production thereof
CN112318790A (en) * 2020-09-09 2021-02-05 西安近代化学研究所 Vulcanization molding process for high-viscosity silicon-based heat insulation layer
CN112438003A (en) * 2018-07-13 2021-03-02 Abb瑞士股份有限公司 Heat sink for high-voltage switchgear
US20210074605A1 (en) * 2019-09-10 2021-03-11 Aptiv Technologies Limited Heat exchanger for electronics
US20220192048A1 (en) * 2019-12-06 2022-06-16 Sungrow Power Supply Co.,Ltd. Radiator and electrical device
WO2022171500A1 (en) * 2021-02-10 2022-08-18 Vitesco Technologies GmbH Electronic assembly having at least one first electronic component and a second electronic component

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4604954B2 (en) * 2005-10-13 2011-01-05 株式会社デンソー Insulation structure of semiconductor module
WO2007105580A1 (en) * 2006-03-13 2007-09-20 Kabushiki Kaisha Toyota Jidoshokki Base for power module
JP5064111B2 (en) * 2006-06-28 2012-10-31 株式会社ティラド Composite heat dissipation plate, method for manufacturing the same, and thermal stress relaxation plate used therefor
KR100798474B1 (en) 2006-11-22 2008-01-28 한국표준과학연구원 Semiconductor chip with dopped conducting layer and metal layer
JP4752785B2 (en) * 2007-02-15 2011-08-17 三菱マテリアル株式会社 Manufacturing method of power module substrate with heat sink
JP2008294279A (en) 2007-05-25 2008-12-04 Showa Denko Kk Semiconductor device
JP4945319B2 (en) 2007-05-25 2012-06-06 昭和電工株式会社 Semiconductor device
JP2008294281A (en) * 2007-05-25 2008-12-04 Showa Denko Kk Semiconductor device and manufacturing method therefor
JP5070014B2 (en) * 2007-11-21 2012-11-07 株式会社豊田自動織機 Heat dissipation device
JP4832419B2 (en) * 2007-12-25 2011-12-07 トヨタ自動車株式会社 Semiconductor module
JP5011088B2 (en) * 2007-12-26 2012-08-29 日新製鋼株式会社 Heat dissipation device and power module
KR101463075B1 (en) * 2008-02-04 2014-11-20 페어차일드코리아반도체 주식회사 Heat sink package
JP4380774B2 (en) * 2008-03-19 2009-12-09 トヨタ自動車株式会社 Power module
TWI501360B (en) * 2008-04-17 2015-09-21 Samsung Electronics Co Ltd Tape for heat dissipating member, chip on film type semiconductor package including heat dissipating member, and electronic apparatus including the same
JP4989552B2 (en) 2008-05-08 2012-08-01 トヨタ自動車株式会社 Electronic components
JP5227681B2 (en) * 2008-07-11 2013-07-03 株式会社豊田自動織機 Semiconductor device
JP5114323B2 (en) * 2008-07-04 2013-01-09 株式会社豊田自動織機 Semiconductor device
JP5114324B2 (en) * 2008-07-07 2013-01-09 株式会社豊田自動織機 Semiconductor device
EP2166569A1 (en) * 2008-09-22 2010-03-24 ABB Schweiz AG Cooling device for a power component
JP2010171279A (en) * 2009-01-23 2010-08-05 Toyota Motor Corp Heat radiator
JP5261214B2 (en) * 2009-01-29 2013-08-14 住友軽金属工業株式会社 Method for manufacturing aluminum clad material for heat generating component cooling device
DE102009000514A1 (en) 2009-01-30 2010-08-26 Robert Bosch Gmbh Composite component and method for producing a composite component
EP2442358A4 (en) * 2009-06-10 2014-04-16 Toyota Motor Co Ltd Semiconductor device
JP2011023545A (en) * 2009-07-15 2011-02-03 Nisshin Steel Co Ltd Heat dissipation structure and power module
DE112010004589T5 (en) * 2009-11-27 2013-01-24 Showa Denko K.K. Laminate and manufacturing method therefor
JP5515947B2 (en) * 2010-03-29 2014-06-11 株式会社豊田自動織機 Cooling system
US20110240280A1 (en) * 2010-03-31 2011-10-06 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy brazing sheet and heat exchanger
JP2011228563A (en) * 2010-04-22 2011-11-10 Showa Denko Kk Method of brazing insulating laminate material
JP5613452B2 (en) * 2010-05-19 2014-10-22 昭和電工株式会社 Brazing method for insulating laminates
US8587116B2 (en) 2010-09-30 2013-11-19 Infineon Technologies Ag Semiconductor module comprising an insert
JP5671351B2 (en) * 2011-01-12 2015-02-18 昭和電工株式会社 Manufacturing method of electronic device mounting substrate
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DE102012208767A1 (en) * 2011-06-17 2012-12-20 Robert Bosch Gmbh Electronic circuit with loss of heat emitting components
JP2013038123A (en) * 2011-08-04 2013-02-21 Showa Denko Kk Method for manufacturing insulation circuit board
JP2013115201A (en) * 2011-11-28 2013-06-10 Toyota Industries Corp Semiconductor device
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JP2014072314A (en) * 2012-09-28 2014-04-21 Toyota Industries Corp Semiconductor device and semiconductor device manufacturing method
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JP6197329B2 (en) * 2013-03-28 2017-09-20 三菱マテリアル株式会社 Power module and method of manufacturing thermal interface plate
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DE102013218826A1 (en) * 2013-09-19 2015-03-19 Siemens Aktiengesellschaft heatsink
JP6316219B2 (en) * 2015-01-22 2018-04-25 三菱電機株式会社 Power semiconductor module
JP6549502B2 (en) * 2016-02-26 2019-07-24 京セラ株式会社 Heat dissipation substrate, semiconductor package and semiconductor module using the same
DE102017203217A1 (en) * 2017-02-28 2018-08-30 Robert Bosch Gmbh Contact configuration
JP6974499B2 (en) * 2017-11-28 2021-12-01 京セラ株式会社 Substrate for mounting electronic devices, electronic devices and electronic modules
CN108337862B (en) * 2018-03-02 2019-09-06 惠州市博宇科技有限公司 A kind of new energy electric motor vehicle special-purpose aluminum substrate
JP7367309B2 (en) * 2019-02-08 2023-10-24 富士電機株式会社 Semiconductor module, semiconductor device, and method for manufacturing semiconductor device
JP2020141023A (en) * 2019-02-27 2020-09-03 株式会社 日立パワーデバイス Semiconductor device

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109317A (en) * 1989-11-07 1992-04-28 Hitachi, Ltd. Mounting mechanism for mounting heat sink on multi-chip module
JPH05299549A (en) * 1992-04-20 1993-11-12 Hitachi Ltd Heat transfer cooling device
US5988488A (en) * 1997-09-02 1999-11-23 Mcdonnell Douglas Corporation Process of bonding copper and tungsten
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
US20030030141A1 (en) * 2000-01-31 2003-02-13 Ngk Insulators, Ltd. Laminated radiation member, power semiconductor apparatus, and method for producing the same
US20030056981A1 (en) * 2001-09-27 2003-03-27 Kyocera Corporation Ceramic circuit board and method for manufacturing the same
US20030102553A1 (en) * 2001-02-22 2003-06-05 Shuhei Ishikawa Member for electronic circuit, method for manufacturing the member, and electronic part
US6756019B1 (en) * 1998-02-24 2004-06-29 Caliper Technologies Corp. Microfluidic devices and systems incorporating cover layers
US20040190251A1 (en) * 2003-03-31 2004-09-30 Ravi Prasher Two-phase cooling utilizing microchannel heat exchangers and channeled heat sink
US20050117302A1 (en) * 2001-11-29 2005-06-02 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
US7215549B2 (en) * 2003-08-26 2007-05-08 Samsung Sdi Co., Ltd. Plasma display device
US20090200065A1 (en) * 2005-07-07 2009-08-13 Kabushiki Kaisha Toyota Jidoshokki Heat dissipation device and power module
US20100002399A1 (en) * 2008-07-04 2010-01-07 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2675173B2 (en) * 1990-03-02 1997-11-12 株式会社日立製作所 Electronic device cooling system
JP3401089B2 (en) * 1994-09-09 2003-04-28 京セラ株式会社 Package for storing semiconductor elements
JP3346657B2 (en) * 1994-09-09 2002-11-18 京セラ株式会社 Package for storing semiconductor elements
JPH10189845A (en) * 1996-12-25 1998-07-21 Denso Corp Heat sink for semiconductor device
JP2000236050A (en) * 1999-02-12 2000-08-29 Sony Corp Heat radiator, electronic apparatus and spacer for heat radiator
JP4649027B2 (en) * 1999-09-28 2011-03-09 株式会社東芝 Ceramic circuit board
JP2002237556A (en) * 2001-02-09 2002-08-23 Mitsubishi Electric Corp Power semiconductor device
US20020185726A1 (en) * 2001-06-06 2002-12-12 North Mark T. Heat pipe thermal management of high potential electronic chip packages
JP4969738B2 (en) * 2001-06-28 2012-07-04 株式会社東芝 Ceramic circuit board and semiconductor module using the same
JP3793562B2 (en) * 2001-09-27 2006-07-05 京セラ株式会社 Ceramic circuit board
JP2004153075A (en) 2002-10-31 2004-05-27 Mitsubishi Materials Corp Substrate for power module and power module
JP4044449B2 (en) * 2003-01-30 2008-02-06 株式会社住友金属エレクトロデバイス Power module substrate
DE10337640A1 (en) * 2003-08-16 2005-03-17 Semikron Elektronik Gmbh Power semiconductor module for fitting on a heat sink has a casing, power semiconductor components and an insulating substrate with metal layers on both sides

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109317A (en) * 1989-11-07 1992-04-28 Hitachi, Ltd. Mounting mechanism for mounting heat sink on multi-chip module
JPH05299549A (en) * 1992-04-20 1993-11-12 Hitachi Ltd Heat transfer cooling device
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
US5988488A (en) * 1997-09-02 1999-11-23 Mcdonnell Douglas Corporation Process of bonding copper and tungsten
US6756019B1 (en) * 1998-02-24 2004-06-29 Caliper Technologies Corp. Microfluidic devices and systems incorporating cover layers
US20030030141A1 (en) * 2000-01-31 2003-02-13 Ngk Insulators, Ltd. Laminated radiation member, power semiconductor apparatus, and method for producing the same
US20030102553A1 (en) * 2001-02-22 2003-06-05 Shuhei Ishikawa Member for electronic circuit, method for manufacturing the member, and electronic part
US20030056981A1 (en) * 2001-09-27 2003-03-27 Kyocera Corporation Ceramic circuit board and method for manufacturing the same
US20050117302A1 (en) * 2001-11-29 2005-06-02 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
US7355853B2 (en) * 2001-11-29 2008-04-08 Denki Kagaku Kogyo Kabushiki Kaisha Module structure and module comprising it
US20040190251A1 (en) * 2003-03-31 2004-09-30 Ravi Prasher Two-phase cooling utilizing microchannel heat exchangers and channeled heat sink
US7215549B2 (en) * 2003-08-26 2007-05-08 Samsung Sdi Co., Ltd. Plasma display device
US20090200065A1 (en) * 2005-07-07 2009-08-13 Kabushiki Kaisha Toyota Jidoshokki Heat dissipation device and power module
US20100002399A1 (en) * 2008-07-04 2010-01-07 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Machine Translation of JP05-299549, pages 1-7 *
Machine Translation of JP2002-237556, pages 1-8. *

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100091463A1 (en) * 2007-04-27 2010-04-15 Isabell Buresch Cooling body
US20080291636A1 (en) * 2007-05-25 2008-11-27 Shogo Mori Semiconductor device
US7813135B2 (en) * 2007-05-25 2010-10-12 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
US20090147479A1 (en) * 2007-11-21 2009-06-11 Shogo Mori Heat dissipation apparatus
US20100002399A1 (en) * 2008-07-04 2010-01-07 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
US8958208B2 (en) 2008-07-04 2015-02-17 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
US8472193B2 (en) * 2008-07-04 2013-06-25 Kabushiki Kaisha Toyota Jidoshokki Semiconductor device
US8898892B2 (en) * 2009-05-15 2014-12-02 Tong Hsing Electronic Industries, Ltd. Method of making circuit board module
US20140000106A1 (en) * 2009-05-15 2014-01-02 Tong Hsing Electronic Industries, Ltd. Circuit board module and method of making the same
US20100326631A1 (en) * 2009-06-26 2010-12-30 Foxconn Technology Co., Ltd. Plate-type heat pipe
US8933557B2 (en) 2009-08-10 2015-01-13 Fuji Electric Co., Ltd. Semiconductor module and cooling unit
US20110061849A1 (en) * 2009-09-16 2011-03-17 Esw Gmbh Device for cooling semi-conductors
US9379038B2 (en) 2010-04-28 2016-06-28 Kabushiki Kaisha Toyota Jidoshokki Heat dissipation device and semiconductor device
US20140361425A1 (en) * 2010-06-30 2014-12-11 Denso Corporation Semiconductor device including cooler
US9070666B2 (en) * 2010-06-30 2015-06-30 Denso Corporation Semiconductor device including cooler
US20120262883A1 (en) * 2011-04-18 2012-10-18 Showa Denko K. K. Heat radiator and manufacturing method thereof
DE102012206047B4 (en) * 2011-04-18 2016-05-12 Showa Denko K.K. Semiconductor device and manufacturing method therefor
US8995129B2 (en) * 2011-04-18 2015-03-31 Kabushiki Kaisha Toyota Jidoshokki Heat radiator and manufacturing method thereof
US20120281167A1 (en) * 2011-05-06 2012-11-08 Funai Electric Co., Ltd. Radiator Plate
US20130056176A1 (en) * 2011-08-26 2013-03-07 Mikros Manufacturing, Inc. Heat Exchanger with Controlled Coefficient of Thermal Expansion
US20150289375A1 (en) * 2012-11-01 2015-10-08 Kabushiki Kaisha Toyota Jidoshokki Module for facilitating positioning of electronic components
US9917031B2 (en) 2013-09-30 2018-03-13 Fuji Electric Co., Ltd. Semiconductor device, and method for assembling semiconductor device
US9464599B2 (en) * 2013-12-16 2016-10-11 Hyundai Motor Company Cooling system for diesel engine having turbocharger
US20150167595A1 (en) * 2013-12-16 2015-06-18 Hyundai Motor Company Cooling system for diesel engine having turbocharger
US10510640B2 (en) 2015-01-26 2019-12-17 Miitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
US20160229689A1 (en) * 2015-02-11 2016-08-11 Analog Devices, Inc. Packaged Microchip with Patterned Interposer
US20160273842A1 (en) * 2015-03-16 2016-09-22 Dana Canada Corporation Heat exchangers with plates having surface patterns for enhancing flatness and methods for manufacturing same
US10744603B2 (en) * 2015-03-16 2020-08-18 Dana Canada Corporation Heat exchangers with plates having surface patterns for enhancing flatness and methods for manufacturing same
JP2017120888A (en) * 2015-12-24 2017-07-06 アイシン精機株式会社 Insulation substrate
US10741995B2 (en) * 2016-09-27 2020-08-11 Jenoptik Optical Systems Gmbh Optical and optoelectronic assembly and method for the production thereof
US11521807B2 (en) * 2018-07-13 2022-12-06 Abb Schweiz Ag Heat sink for a high voltage switchgear
CN112438003A (en) * 2018-07-13 2021-03-02 Abb瑞士股份有限公司 Heat sink for high-voltage switchgear
US10490482B1 (en) * 2018-12-05 2019-11-26 Toyota Motor Engineering & Manufacturing North America, Inc. Cooling devices including jet cooling with an intermediate mesh and methods for using the same
US11217505B2 (en) * 2019-09-10 2022-01-04 Aptiv Technologies Limited Heat exchanger for electronics
US20210074605A1 (en) * 2019-09-10 2021-03-11 Aptiv Technologies Limited Heat exchanger for electronics
US20220192048A1 (en) * 2019-12-06 2022-06-16 Sungrow Power Supply Co.,Ltd. Radiator and electrical device
CN112318790A (en) * 2020-09-09 2021-02-05 西安近代化学研究所 Vulcanization molding process for high-viscosity silicon-based heat insulation layer
WO2022171500A1 (en) * 2021-02-10 2022-08-18 Vitesco Technologies GmbH Electronic assembly having at least one first electronic component and a second electronic component

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