US20090154128A1 - Wiring substrate and semiconductor device - Google Patents
Wiring substrate and semiconductor device Download PDFInfo
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- US20090154128A1 US20090154128A1 US12/331,673 US33167308A US2009154128A1 US 20090154128 A1 US20090154128 A1 US 20090154128A1 US 33167308 A US33167308 A US 33167308A US 2009154128 A1 US2009154128 A1 US 2009154128A1
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- wiring substrate
- semiconductor element
- dam
- distance
- underfill resin
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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Definitions
- the present invention relates to a wiring substrate and a semiconductor device. More particularly, the present invention relates to a wiring substrate including a wiring substrate main body, a wiring pattern having connection portions to which a semiconductor element is flip-chip bonded, a solder resist from which the connection portions are exposed, and a dam provided on the solder resist to block a underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body, and a semiconductor device having the wiring substrate.
- a semiconductor device there is a semiconductor device including a wiring substrate main body, a wiring pattern having connection portions to which a semiconductor element is flip-chip bonded, a solder resist from which the connection portions are exposed, an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body, and a dam provided on the solder resist to block the underfill resin (see FIG. 1 ).
- FIG. 1 is a plan view of a semiconductor device of the related art.
- FIG. 2 is a sectional view of the semiconductor device shown in FIG. 1 .
- a semiconductor device 200 of the related art includes a wiring substrate 201 , a semiconductor element 202 , an underfill resin 203 , and external connection terminals 204 .
- the wiring substrate 201 has a wiring substrate main body 211 having a semiconductor element mounting area J in which the semiconductor element 202 is mounted, a wiring pattern 212 , internal connection pads 214 , a solder resist 216 , a dam 217 , and external connection pads 219 .
- the wiring substrate main body 211 is constructed by a plurality of insulating layers, vias and wirings formed in a plurality of insulating layers, and the like.
- the vias and the wirings provided on the wiring substrate main body 211 electrically connect the wiring pattern 212 , the internal connection pads 214 , and the external connection pads 219 .
- the wiring pattern 212 is provided on a portion of an upper surface 211 A of the wiring substrate main body 211 corresponding to the semiconductor element mounting area J.
- the wiring pattern 212 has connection portions 222 to which a bump 209 is connected respectively.
- the internal connection pads 214 are provided in an area of the upper surface 211 A of the wiring substrate main body 211 , which is positioned outside the semiconductor element mounting area J.
- the internal connection pads 214 are the pads that are electrically connected to a wiring substrate 206 , on which an electronic component 207 is mounted, via an internal connection terminal 208 .
- the solder resist 216 is provided on the upper surface 211 A of the wiring substrate main body 211 .
- the solder resist 216 has opening portions 224 , from which an upper surface of the internal connection pad 214 respectively, and an opening portion 225 , which is formed to have a size substantially equal to the semiconductor element mounting area J when viewed from the top.
- the opening portion 225 is provided so as to penetrate a portion of the solder resist 216 corresponding to the semiconductor element mounting area J. Accordingly, the opening portion 225 exposes the wiring pattern 212 in the portion arranged in the semiconductor element mounting area J.
- the dam 217 is provided on the solder resist 216 so as to surround the semiconductor element mounting area J.
- the shape of the dam 217 is a frame.
- the dam 217 blocks the underfill resin 203 such that, when the underfill resin 203 provided in a clearance between the wiring substrate 201 and the semiconductor element 202 is formed, the underfill resin 203 does not flow out to the internal connection pads 214 .
- a distance M between an inner wall of the opening portion 225 of the solder resist 216 or an end portion of semiconductor element 202 and an inner wall of the dam 217 is set constant around a whole circumstance of the dam 217 .
- the distance M can be set to 1.1 mm to 1.5 mm, for example.
- a height of the dam 217 M can be set to 20 ⁇ m, for example.
- the external connection pads 219 are provided on a lower surface 211 B of the wiring substrate main body 211 .
- the external connection pads 219 are used to provide the external connection terminals 204 , which are connected to a mounting substrate (not shown) such as a mother board, or the like, respectively.
- the semiconductor element 202 is flip-chip bonded to the connection portions 222 .
- the semiconductor element 202 is electrically connected to the connection portions 222 via the bumps 209 provided on electrode pads 226 of the semiconductor element 202 , respectively. Lower ends of the bumps 209 are connected to the connection portions 222 .
- the underfill resin 203 prevents deterioration of reliability of the wiring pattern 212 . That is, the underfill resin 203 improves a joining strength of connection portions between the bumps 209 and the connection portions 222 , and also suppresses a occurrence of corrosion of the wiring pattern 212 .
- the underfill resin 203 is formed as follows. First, nozzles (not shown) for feeding the under fill resin are arranged so as to oppose to a groove 231 .
- the groove 231 is formed at underfill resin feeding area K and between an outer peripheral end of the semiconductor element 202 and an inner wall of the dam 217 (also see FIG. 1 ).
- the underfill resin is fed from the nozzles while moving the nozzles as shown in allows N shown in FIG. 1 .
- fed underfill resin spreads over an interior of the inner circumference of the dam 217 , reaches to an opposite corner of a corner where the underfill resin feeding area K and thus the underfill resin 203 is formed.
- the external connection terminals 204 are provided on lower surfaces of the external connection pads 219 .
- the external connection terminals 204 are the terminals that are connected to the mounting substrate (not shown) such as the mother board, or the like (see Japanese Patent Unexamined Publication JP-A-2006-351559, for example).
- FIG. 3 is a plan view explaining the problem arisen in the semiconductor device of the related art
- FIG. 4 is a sectional view of the semiconductor device shown in FIG. 3 .
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 200 shown in FIG. 1 and FIG. 2 of the related art.
- the semiconductor device 200 of the related art when a size of the surface of the semiconductor element 202 is increased (concretely, when a size of the semiconductor element 202 when viewed from the top is more than 10 mm square), an area P in which the underfill resin 203 is not filled is formed.
- the area P is in a clearance between a corner portion 202 B of the semiconductor element 202 and the wiring substrate 201 , which is positioned on the opposite side to a corner portion 202 A of the semiconductor element 202 surrounded with the underfill resin feeding area K,. Therefore, the wiring pattern 212 provided on the portion corresponding to this area P is not covered with the underfill resin 203 . As a result, corrosion, electromigration and etc. are caused and thus reliability of the wiring pattern 212 is lowered.
- the present invention has been made in view of the above problems, and it is an object of the present invention to provide a wiring substrate capable of improving reliability of a wiring pattern to which a semiconductor element is flip-chip bonded, and a semiconductor device.
- a wiring substrate comprising:
- a wiring substrate main body having a semiconductor element mounting area in which a semiconductor element is mounted
- a wiring pattern provided on a first surface of the wiring substrate main body at a portion corresponding to the semiconductor element mounting area, and having connection portions to which the semiconductor element is flip-chip bonded;
- solder resist provided on the first surface of the wiring substrate main body, and having an opening portion whose size is substantially equal to the semiconductor element mounting area, when viewed from a top;
- a dam provided on an upper surface of the solder resist so as to surround the semiconductor element mounting area, for blocking an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body;
- the distance between the inner wall of the opening portion of the solder resist and the inner wall of the dam partially varied. Therefore, when the underfill resin is to be formed in the clearance between the semiconductor element and the wiring substrate main body, a flowing direction of the underfill resin can be controlled by the inner wall of the dam. As a result, the wiring pattern located in the area where the underfill resin is hardly formed can be covered with the underfill resin with good precision, and thus reliability of the wiring pattern to which the semiconductor element is flip-chip bonded can be improved.
- a semiconductor device which includes the above described wiring substrate; the semiconductor element that is flip-chip bonded to the connection portions; and the underfill resin provided in the clearance between the semiconductor element and the wiring substrate.
- the flowing direction of the underfill resin can be controlled by the inner wall of the dam.
- the wiring pattern located in the area where the underfill resin is hardly formed can be covered with the underfill resin with good precision, and thus reliability of the wiring pattern to which the semiconductor element is flip-chip bonded can be improved.
- FIG. 1 is a plan view of a semiconductor device of the related art
- FIG. 2 is a sectional view of the semiconductor device shown in FIG. 1 ;
- FIG. 3 is a plan view explaining the problem arisen in the semiconductor device of the related art
- FIG. 4 is a sectional view of the semiconductor device shown in FIG. 3 ;
- FIG. 5 is a plan view of a semiconductor device according to a first embodiment of the present invention.
- FIG. 6 is a sectional view of the semiconductor device shown in FIG. 5 ;
- FIG. 7 is a plan view of a semiconductor device according to a modification of the first embodiment of the present invention.
- FIG. 8 is a plan view of a semiconductor device according to a second embodiment of the present invention.
- FIG. 9 is a plan view of a semiconductor device according to a third embodiment of the present invention.
- FIG. 10 is a plan view of a semiconductor device according to a fourth embodiment of the present invention.
- FIG. 11 is a plan view of a semiconductor device according to a fifth embodiment of the present invention.
- FIG. 12 is a plan view of a semiconductor device according to a sixth embodiment of the present invention.
- FIG. 13 is a plan view of a semiconductor device according to a seventh embodiment of the present invention.
- FIG. 5 is a plan view of a semiconductor device according to a first embodiment of the present invention
- FIG. 6 is a sectional view of the semiconductor device shown in FIG. 5 .
- a semiconductor device 10 of the first embodiment includes a wiring substrate 11 , a semiconductor element 12 , an underfill resin 13 , and an external connection terminal 14 .
- the wiring substrate 11 has a wiring substrate main body 31 having a semiconductor element mounting area A in which the semiconductor element 12 is mounted, a wiring pattern 33 , internal connection pads 34 , a solder resist 35 , a dam 37 , and external connection pads 38 .
- the wiring substrate main body 31 includes a plurality of insulating layers (for example, resin layers), and vias and wirings formed in a plurality of insulating layers, and the like.
- the vias and the wirings provided on the wiring substrate main body 31 electrically connect the wiring substrate main body 31 , the internal connection pads 34 , and the external connection pads 38 .
- a coreless substrate, a build-up substrate with core having a core substrate, or the like can be employed as the wiring substrate main body 31 .
- the wiring pattern 33 is provided on a portion of an upper surface 31 A (first surface) of the wiring substrate main body 31 corresponding to the semiconductor element mounting area A.
- the wiring pattern 33 has connection portions 41 to which bumps 16 provided on electrode pads 56 of the semiconductor element 12 are connected.
- the wiring pattern 33 is electrically connected to the internal connection pads 34 and the external connection pads 38 by vias and wirings (not shown) provided in the wiring substrate main body 31 .
- the wiring pattern 33 is exposed from an opening portion 43 in the solder resist 35 , described later, prior to a state that the underfill resin 13 is formed.
- a patterned metal film can be used as the wiring pattern 33 .
- the internal connection pads 34 are provided on the upper surface 31 A of the wiring substrate main body 31 , which is positioned outside the semiconductor element mounting area A. Upper surfaces of the internal connection pad 34 are exposed from opening portions 44 in the solder resist 35 , described later. On the internal connection pads 34 , an internal connection terminal 18 (e.g., conductive ball (e.g., a solder ball, a solder in which a core ball is provided, or the like)) or a conductive post (e.g., Cu post, or the like) is formed respectively.
- the internal connection pads 34 electrically connect a semiconductor device 20 , which is loaded on the semiconductor device 10 , and the semiconductor device 10 via the internal connection terminals 18 .
- the patterned metal film (concretely, e.g., Cu film) can be used.
- the Cu film for example, a Ni/Au laminated film laminated in a order of a Ni layer and an Au layer may be provided on the internal connection pad 34 .
- the semiconductor device 20 has a wiring substrate 21 (another wiring substrate) having pads 22 , 23 and internal connection pads 25 , and electronic components 27 , 28 .
- the pads 22 , 23 are provided on an upper surface side of the wiring substrate 21 .
- the pads 22 are connected to the electronic component 27 .
- the pads 23 are connected to the electronic component 28 .
- the pads 22 , 23 are electrically connected to the internal connection pads 25 .
- the internal connection pads 25 are provided on the lower surface of the wiring substrate 21 (surface of the wiring substrate 21 opposing to the semiconductor device 10 ).
- the internal connection pads 25 are electrically connected to the semiconductor device 10 via the internal connection terminals 18 .
- As the wiring substrate 21 for example, a coreless substrate, a build-up substrate with core, or the like can be employed.
- the electronic component 27 is mounted on the pads 22 .
- As the electronic component 27 for example, a semiconductor element can be used.
- the electronic component 28 is mounted on the pads 23 .
- As the electronic component 28 for example, a chip resistor, a chip capacitor, a chip inductor, or the like can be employed. In this case, another semiconductor device constructed similarly to the semiconductor device 10 may be stacked on the semiconductor device 10 .
- the solder resist 35 is provided on the upper surface 31 A of the wiring substrate main body 31 .
- the solder resist 35 has the opening portion 43 that is shaped to have the substantially same size (area) as the semiconductor element mounting area A when viewed from the top, and the opening portions 44 that exposes the upper surfaces of the internal connection pads 34 respectively.
- the opening portion 43 exposes the portion of the wiring pattern 33 corresponding to the semiconductor element mounting area A prior to a state that the underfill resin 13 is formed.
- a thickness of the solder resist 35 on the wiring pattern 33 and the internal connection pads 34 can be set to 10 ⁇ m, for example.
- the solder resist 35 can be formed by the printing method, for example.
- the dam 37 is provided on an upper surface 35 A of the solder resist 35 so as to surround the semiconductor element mounting area A.
- the dam 37 prevents the underfill resin 13 from flowing out on the internal connection pads 34 (to block the underfill resin 13 ) when the underfill resin 13 provided in the clearance between the wiring substrate 11 and the semiconductor element 12 is formed.
- a groove portion 45 is formed between a side surface 12 - 1 of the semiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of the dam 37 opposing to the side surface 12 - 1 of the semiconductor device 12 .
- a part of this groove portion 45 corresponds to an underfill resin feeding area B from which the underfill resin 13 is fed.
- a distance D 1 (first distance) is defined between the inner wall of the portion of the dam 37 opposing to the side surface 12 - 1 of the semiconductor device 12 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 .
- This distance D 1 is set to a distance over which an underfill resin feeding nozzle (not shown) can feed the underfill resin 13 to the groove portion 45 when the underfill resin 13 is formed.
- the distance D 1 can be set to 0.7 mm to 2.5 mm, for example.
- a groove portion 46 is formed between a side surface 12 - 2 of the semiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of the dam 37 opposing to the side surface 12 - 2 of the semiconductor device 12 .
- a part of this groove portion 46 corresponds to the underfill resin feeding area B from which the underfill resin 13 is fed.
- a distance D 2 (first distance) is defined between the inner wall of the portion of the dam 37 opposing to the side surface 12 - 2 of the semiconductor device 12 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 .
- This distance D 2 is set to a distance over which the underfill resin feeding nozzle (not shown) can feed the underfill resin 13 to the groove portion 46 when the underfill resin 13 is formed.
- the distance D 2 is set to a distance that is substantially equal to the distance D 1 .
- the distance D 2 can be set to 0.7 mm to 2.5 mm, for example.
- a groove portion 47 is formed between a side surface 12 - 3 of the semiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of the dam 37 opposing to the side surface 12 - 3 of the semiconductor device 12 .
- This groove portion 47 has a first groove portion 48 and a second groove portion 49 .
- the first groove portion 48 is formed such that a width of the first groove portion 48 is narrowed continuously as a position goes from a corner 12 B of the semiconductor device 12 toward a corner 12 C of the semiconductor device 12 .
- the corner 12 B is defined between the side surface 12 - 2 of the semiconductor device 12 and the side surface 12 - 3 of the semiconductor device 12 .
- the corner 12 C is defined between the side surface 12 - 3 of the semiconductor device 12 and a side surface 12 - 4 of the semiconductor device 12 .
- a part of the inner wall of the portion of the dam 37 constituting the first groove portion 48 is formed like such a taper shape, when viewed from the top, that the inner wall approaches to the side surface 12 - 3 of the semiconductor device 12 from the corner 12 B to the corner 12 C.
- distance (second distance) between the inner wall of the portion of the dam 37 constituting the first groove portion 48 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is made continuously smaller.
- a distance D 3 of the portion which is largest can be set to 0.7 mm to 2.5 mm, for example, and a distance D 4 of the portion which is smallest can be set to 0.2 mm, for example.
- the second groove portion 49 is integrated with the first groove portion 48 .
- a width of the second groove portion 49 is narrower than widths of the groove portions 45 , 46 , is substantially constant.
- a distance D 5 (second distance) is defined between the inner wall of the portion of the dam 37 constituting the second groove portion 49 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 . This distance D 5 can be set to 0.2 mm, for example.
- a groove portion 51 is defined between the side surface 12 - 4 of the semiconductor device 12 that is shaped into a quadrangle when viewed from the top, and the inner wall of the portion of the dam 37 opposing to the side surface 12 - 4 of the semiconductor device 12 .
- This groove portion 51 has a first groove portion 52 and a second groove portion 53 .
- the first groove portion 52 is constructed such that a groove width of the first groove portion 52 is narrowed continuously as a position goes from a corner 12 D of the semiconductor device 12 toward the corner 12 C of the semiconductor device 12 .
- the corner 12 D is defined between the side surface 12 - 1 of the semiconductor device 12 and the side surface 12 - 4 of the semiconductor device 12 .
- the corner 12 C is defined between the side surface 12 - 3 of the semiconductor device 12 and the side surface 12 - 4 of the semiconductor device 12 .
- the inner wall of the portion of the dam 37 constituting the first groove portion 52 is formed like such a taper shape, when viewed from the top, that the inner wall comes close to the side surface 12 - 4 of the semiconductor device 12 from the corner 12 D to the corner 12 C.
- distance (second distance) between the inner wall of the portion of the dam 37 constituting the first groove portion 52 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is made continuously smaller.
- a distance D 6 of the portion which is largest can be set to 0.7 mm to 2.5 mm, for example, and a distance D 7 of the portion which is smallest can be set to 0.2 mm, for example.
- the second groove portion 53 is integrated with the first groove portion 52 .
- a width of the second groove portion 53 is narrower than widths of the groove portions 45 , 46 , and is substantially constant.
- a distance D 8 (second distance) is defined between the inner wall of the portion of the dam 37 constituting the second groove portion 53 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 . This distance D 8 can be set to 0.2 mm, for example.
- the dam 37 constructed has a shape such that the distance between the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 and the inner wall of the dam 37 is partially varied.
- a height of the dam 37 can be set to 20 ⁇ m, for example.
- the solder resist can be employed, for example.
- the dam 37 can be formed by the screen printing method, for example.
- distances D 1 , D 2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the dam 37 is set smaller than distances D 5 , D 8 (second distance) from the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B to the inner wall of the dam 37 .
- the distance between the inner wall of the opening portion 43 of the solder resist 35 and the inner wall of the dam 37 is partially varied.
- the flowing direction of the fed underfill resin 13 can be controlled by the inner wall of the dam 37 such that the underfill resin 13 is directed to the clearance between the semiconductor element 12 and the wiring substrate 11 and sufficiently reaches to the corner 12 C which is opposing corner of the corner 12 A where the underfill resin feeding area B is formed.
- the portion of the wiring pattern 33 exposed from the opening portion 43 can be covered with the underfill resin 13 with good precision, and thus reliability of the wiring pattern 33 to which the semiconductor element 12 is flip-chip bonded can be improved.
- distance (second distance) between the inner wall of the portion of the dam 37 constituting the first groove portions 48 , 52 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is made continuously smaller. Therefore, the flowing direction of the underfill resin 13 can be controlled such that the underfill resin 13 is directed to an area of the wiring pattern 33 , which is located near the corner 12 C of the semiconductor element 12 (a corner positioned on the opposite side to a corner 12 A between the side surface 12 - 1 of the semiconductor element 12 and the side surface 12 - 2 of the semiconductor element 12 ) and in which it was difficult to form the underfill resin 13 in the related art. As a result, reliability of the wiring pattern 33 can be further improved.
- the external connection pads 38 are provided on a lower surface 31 B of the wiring substrate main body 31 .
- the external connection pads 38 are electrically connected to the wiring pattern 33 and the internal connection pads 34 via vias and wiring (not shown) provided in the wiring substrate main body 31 .
- the external connection pads 38 used to provide the external connection terminal 14 respectively.
- the patterned metal film e.g., Cu film
- the patterned metal film can be employed as the external connection pads 38 .
- distances D 1 , D 2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the dam 37 is set smaller than distances D 5 , D 8 (second distance) between the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B and the inner wall of the dam 37 (distance between the inner wall of the opening 43 of the solder resist 35 and the inner wall of the dam 37 is partially varied).
- the flowing direction of the underfill resin 13 can be controlled by the inner wall of the dam 37 such that the underfill resin 13 is directed to the clearance between the semiconductor element 12 and the wiring substrate 11 .
- the portion of the wiring pattern 33 exposed from the opening portion 43 can be covered with the underfill resin 13 with good precision, and thus reliability of the wiring pattern 33 to which the semiconductor element 12 is flip-chip bonded can be improved.
- distance (second distance) between the inner wall of the portion of the dam 37 constituting the first groove portions 48 , 52 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is made continuously smaller. Therefore, the flowing direction of the underfill resin 13 can be controlled such that the underfill resin 13 is directed to an area of the wiring pattern 33 , which is located near the corner 12 C of the semiconductor element 12 (a corner positioned on the opposite side to a corner 12 A between the side surface 12 - 1 of the semiconductor element 12 and the side surface 12 - 2 of the semiconductor element 12 ) and in which it was difficult to form the underfill resin 13 in the related art. As a result, reliability of the wiring pattern 33 can be further improved.
- the above configuration is effective for the case where an outer shape size of the semiconductor element 12 when viewed from the top is large (the case where an outer shape size of the semiconductor element 12 when viewed from the top is more than 10 mm square).
- the semiconductor element 12 has the electrode pads 56 on which the bumps 16 are provided.
- the semiconductor element 12 is flip-chip bonded to the connection portions 41 of the wiring pattern 33 .
- the semiconductor element 12 is electrically connected to the wiring substrate 11 via the bumps 16 .
- An outer shape size of the semiconductor element 12 when viewed from the top is more than 10 mm square, for example.
- the bumps 16 are fixed to the connection portions 41 by a solder.
- a solder bump, an Au bump, or the like can be employed as the bumps 16 , for example, a solder bump, an Au bump, or the like can be employed.
- the underfill resin 13 is provided so as to fill the clearance between the wiring substrate 11 and the semiconductor element 12 that is flip-chip bonded to the wiring substrate 11 .
- the underfill resin 13 covers the portion of the wiring pattern 33 exposed from the opening portion 43 and seals the bumps 16 .
- the underfill resin 13 is fed to the clearance between the wiring substrate 11 and the semiconductor element 12 through portions of the groove portions 45 , 46 corresponding to the underfill resin feeding area B.
- an underfill resin feeding nozzle (not shown) is arranged to oppose to the portions of the groove portions 45 , 46 corresponding to the underfill resin feeding area B, and then the resin serving as the underfill resin 13 is fed while moving the underfill resin feeding nozzle (not shown) as shown in allows C.
- an epoxy resin can be employed as the material of the underfill resin 13 .
- the external connection terminals 14 are provided on the lower surfaces of the external connection pads 38 respectively.
- the external connection terminals 14 connect (mount) the semiconductor device 10 to the pads (not shown) of the mounting substrate such as the mother board, or the like.
- a solder ball can be employed as the external connection terminal 14 .
- distances D 1 , D 2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the dam 37 is set smaller than distances D 5 , D 8 (second distance) between the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B and the inner wall of the dam 37 . That is, distance between the inner wall of the opening portion 43 of the solder resist 35 and the inner wall of the dam 37 is partially varied.
- the flowing direction of the underfill resin 13 can be controlled by the inner wall of the dam 37 such that the underfill resin 13 is directed to the clearance between the semiconductor element 12 and the wiring substrate 11 .
- the portion of the wiring pattern 33 exposed from the opening portion 43 can be covered with the underfill resin 13 with good precision, and thus reliability of the wiring pattern 33 to which the semiconductor element 12 is flip-chip bonded can be improved.
- distance (second distance) between the inner wall of the portion of the dam 37 constituting the first groove portions 48 , 52 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is made continuously smaller. Therefore, the flowing direction of the underfill resin 13 can be controlled such that the underfill resin 13 is directed to an area of the wiring pattern 33 , which is located near the corner 12 C of the semiconductor element 12 (a corner positioned on the opposite side to a corner 12 A between the side surface 12 - 1 of the semiconductor element 12 and the side surface 12 - 2 of the semiconductor element 12 ) and in which it was difficult to form the underfill resin 13 in the related art. As a result, reliability of the wiring pattern 33 can be further improved.
- the above configuration is effective for the case where an outer shape size of the semiconductor element 12 when viewed from the top is large (the case where an outer shape size of the semiconductor element 12 when viewed from the top is more than 10 mm square).
- FIG. 7 is a plan view of a semiconductor device according to a modification of the first embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 10 in the first embodiment.
- a semiconductor device 60 according to a modification of the first embodiment is similar to the semiconductor device 10 , except that a notched portion 61 is provided on the dam 37 provided on the semiconductor device 10 in the first embodiment.
- the notched portion 61 is formed on the inner wall of the portion of the dam 37 opposing to the corner 12 C of the semiconductor element 12 , which is positioned on the opposite side to the corner 12 A of the semiconductor element 12 opposing to the underfill resin feeding area B.
- the notched portion 61 is formed on the inner wall of the portion of the dam 37 opposing to the corner 12 C of the semiconductor element 12 , which is positioned on the opposite side to the corner 12 A of the semiconductor element 12 opposing to the underfill resin feeding area B. Therefore, when the underfill resin 13 is formed in the clearance between the semiconductor element 12 and the wiring substrate 11 , the extra underfill resin 13 can be stored in the notched portion 61 . As a result, such a situation can be prevented that the extra underfill resin 13 gets over the dam 37 and flows out onto the internal connection pads 34 .
- the semiconductor device 60 according to the modification of the first embodiment can achieve the similar advantages as those of the semiconductor device 10 in the first embodiment.
- FIG. 8 is a plan view of a semiconductor device according to a second embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 10 in the first embodiment.
- a semiconductor device 70 according to the second embodiment is similar to the semiconductor device 10 , except that a dam 71 is provided instead of the dam 37 provided on the semiconductor device 10 in the first embodiment.
- the dam 71 is similar to the dam 37 , except that a shape of the portion of the dam 37 (see FIG. 5 ) forming the first groove portions 48 , 52 is modified into the shape constituting the second groove portions 49 , 53 explained in the first embodiment. That is, the semiconductor device 70 does not have the first groove portions 48 , 52 whose groove width is narrowed continuously.
- the semiconductor device 70 according to the second embodiment can achieve the similar advantages as those of the semiconductor device 10 in the first embodiment, too.
- FIG. 9 is a plan view of a semiconductor device according to a third embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 70 in the second embodiment.
- a semiconductor device 80 according to the third embodiment is similar to the semiconductor device 70 , except that a dam 81 is provided instead of the dam 71 provided on the semiconductor device 70 in the second embodiment.
- the dam 81 is similar to the dam 71 (see FIG. 8 ), except that a projection portion 83 and a projection portion 84 are provided.
- the projection portion 83 is provided on the portion that is positioned near the corner 12 B and opposes to the side surface of the semiconductor element 12 .
- the projection portion 84 is provided on the portion that is positioned near the corner 12 D and opposes to the side surface of the semiconductor element 12 .
- the projection portion 83 has a first projection portion 86 and a second projection portion 87 .
- the first projection portion 86 is provided more closely to the corner 12 A side of the semiconductor element 12 than the second projection portion 87 .
- Distance D 9 (second distance) between a side surface 86 A of the first projection portion 86 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is set smaller than distance D 1 (first distance). Concretely, when the distance D 1 is 1 mm, the distance D 9 can be set to 0.5 mm, for example.
- the second projection portion 87 is provided more closely to the corner 12 D side of the semiconductor element 12 than the first projection portion 86 .
- the second projection portion 87 is made integral with the first projection portion 86 .
- Distance D 10 (second distance) between a side surface 87 A of the second projection portion 87 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is set smaller than distance D 1 (first distance). Concretely, when the distance D 1 is 1 mm, the distance D 10 can be set to 0.2 mm, for example.
- the projection portion 83 is provided to stepwisely reduce distances D 9 , D 10 (second distances) between the side surfaces 86 A, 87 A of the projection portion 83 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 .
- the projection portion 84 has a first projection portion 88 and a second projection portion 89 .
- the first projection portion 88 is provided more closely to the corner 12 A side of the semiconductor element 12 than the second projection portion 89 .
- Distance D 11 (second distance) between a side surface 88 A of the first projection portion 88 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is set smaller than distance D 2 (first distance). Concretely, when the distance D 2 is 1 mm, the distance D 11 can be set to 0.5 mm, for example.
- the second projection portion 89 is provided more closely to the corner 12 B side of the semiconductor element 12 than the first projection portion 88 .
- the second projection portion 89 is made integral with the first projection portion 88 .
- Distance D 12 (second distance) between a side surface 89 A of the second projection portion 89 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 is set smaller than distance D 2 (first distance). Concretely, when the distance D 2 is 1 mm, the distance D 12 can be set to 0.2 mm, for example.
- the projection portion 84 is provided to stepwisely reduce distances D 11 , D 12 (second distances) between the side surfaces 88 A, 89 A of the projection portion 84 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the opening portion 43 .
- controlling performance of the flowing direction of the underfill resin 13 can be improved by providing the projection portions 83 , 84 to the dam 81 . Therefore, the wiring pattern 33 can be covered with the underfill resin 13 with high precision, and thus reliability of the wiring pattern 33 can be further improved.
- the semiconductor device 80 according to the present embodiment can achieve the similar advantages as those of the semiconductor device 70 in the second embodiment.
- FIG. 10 is a plan view of a semiconductor device according to a fourth embodiment of the present invention.
- a reference symbol E denotes an area which is provided between the semiconductor element 12 and the wiring substrate 11 and to which the underfill resin 13 is fed (referred to as an “underfill resin feeding area E” hereinafter).
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 70 in the second embodiment.
- a semiconductor device 95 according to the fourth embodiment is similar to the semiconductor device 70 , except that a dam 96 is provided instead of the dam 71 provided on the semiconductor device 70 in the second embodiment.
- the dam 96 is similar to the dam 71 , except that an inner wall of the portion of the dam 96 opposing to the side surface 12 - 2 of the semiconductor element 12 is positioned closer to the side surface 12 - 2 of the semiconductor element 12 such that the groove portion 53 provided in the dam 71 is formed instead of the groove portion 46 provided in the dam 71 (see FIG. 8 ), a projection portion 97 is provided on the portion that is positioned near the corner 12 A and opposes to the side surface 12 - 4 of the semiconductor element 12 , and a projection portion 98 is provided on the portion that is positioned near the corner 12 D and opposes to the side surface 12 - 4 of the semiconductor element 12 .
- the projection portion 97 makes distance D 13 (second distance) between the side wall of the portion of the solder resist 35 corresponding to areas except the underfill resin feeding area E and an inner wall 97 A of the projection portion 97 smaller than the distance D 1 (first distance).
- the distance D 13 can be set to 0.2 mm, for example.
- a side wall of the portion of the projection portion 97 opposing to the projection portion 98 is formed like a taper shape, when viewed from the top, to guide the underfill resin 13 to a clearance between the semiconductor element 12 and the wiring substrate 11 .
- the projection portion 98 makes distance D 14 (second distance) between the side wall of the portion of the solder resist 35 corresponding to areas except the underfill resin feeding area E and an inner wall 98 A of the projection portion 98 smaller than the distance D 1 (first distance).
- the distance D 14 can be set to 0.2 mm, for example.
- a side wall of the portion of the projection portion 98 opposing to the projection portion 97 is formed like a taper shape, when viewed from the top, to guide the underfill resin 13 to a clearance between the semiconductor element 12 and the wiring substrate 11 .
- the semiconductor device 95 according to the fourth embodiment can achieve the similar advantages as those of the semiconductor device 70 in the second embodiment.
- FIG. 11 is a plan view of a semiconductor device according to a fifth embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 95 in the fourth embodiment.
- a semiconductor device 105 according to the fifth embodiment is similar to the semiconductor device 95 , except that a dam 106 is provided instead of the dam 96 provided on the semiconductor device 95 in the fourth embodiment.
- the dam 106 is similar to the dam 96 , except that the projection portions 97 , 98 provided on the dam 96 (see FIG. 10 ) are removed from the constituent elements.
- the semiconductor device 105 according to the fifth embodiment can achieve the similar advantages as those of the semiconductor device 95 in the fourth embodiment.
- FIG. 12 is a plan view of a semiconductor device according to a sixth embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 10 in the first embodiment.
- a semiconductor device 110 according to the sixth embodiment is similar to the semiconductor device 10 , except that the solder resist 35 is provided on the configuration of the semiconductor device 10 in the first embodiment to cover the portion of the wiring pattern 33 corresponding to the semiconductor element mounting area A except the connection portions 41 .
- the solder resist 35 is provided so as to cover the portion of the wiring pattern 33 corresponding to the semiconductor element mounting area A except the connection portions 41 . Therefore, a flow rate of the underfill resin 13 flowing through the clearance between the semiconductor element 12 and the wiring substrate 11 can be increased.
- the semiconductor device 110 according to the sixth embodiment can achieve the similar advantages as those of the semiconductor device 10 in the first embodiment.
- dam 71 , 81 , 96 , 106 explained in the second to fifth embodiments may be provided in place of the dam 37 provided on the semiconductor device 110 .
- the notched portion 61 shown in FIG. 7 may be provided on the dam 37 , 71 , 81 , 96 , 106 provided on the semiconductor device 110 .
- FIG. 13 is a plan view of a semiconductor device according to a seventh embodiment of the present invention.
- the same reference symbols are affixed to the same constituent portions as those of the semiconductor device 10 in the first embodiment.
- a semiconductor device 120 according to the seventh embodiment is similar to the semiconductor device 10 , except that a semiconductor element 121 in which the electrode pads 56 are arranged as peripheral electrodes and a wiring substrate 122 are provided instead of the semiconductor element 12 and the wiring substrate 11 provided on the semiconductor device 10 of the first embodiment.
- the wiring substrate 122 is similar to the wiring substrate 11 (see FIG. 6 ), except that the connection portions 41 are arranged on the upper surface 31 A of the portion of the wiring substrate main body 31 opposing to the electrode pads 56 provided on the semiconductor element 121 .
- dam 71 , 81 , 96 , 106 explained in the second to fifth embodiments may be provided in place of the dam 37 provided on the semiconductor device 120 .
- the notched portion 61 shown in FIG. 7 may be provided on the dam 37 , 71 , 81 , 96 , 106 provided on the semiconductor device 120 .
- the dam 37 , 71 , 81 , 96 , 106 explained in the first to fifth embodiments may be provided on the semiconductor device having the wiring substrate to which the internal connection pad 34 is not provided.
- the present invention is applicable to the wiring substrate including the wiring substrate main body, the wiring pattern having connection portions to which the semiconductor element is flip-chip bonded, the solder resist from which the connection portions are exposed, and the dam provided on the solder resist and provided in the clearance between the semiconductor element and the wiring substrate main body to block the underfill resin, and the semiconductor device using the same.
Abstract
A wiring substrate 11 includes a wiring substrate main body 31 having a semiconductor element mounting area A, a wiring pattern 33 provided on an upper surface 31A of the wiring substrate main body 31 at a portion corresponding to the semiconductor element mounting area A, a solder resist 35 provided on the upper surface 31A of the wiring substrate main body 31 and having an opening portion 43 whose size is substantially equal to the semiconductor element mounting area A when viewed from a top, and a dam 37 provided on the solder resist 35 to block an underfill resin 13 provided in a clearance between the semiconductor element 12 and the wiring substrate main body 31. A distance between an inner wall of the opening portion 43 of the solder resist 35 and an inner wall of the dam 37 is partially varied.
Description
- 1. Field of the Invention
- The present invention relates to a wiring substrate and a semiconductor device. More particularly, the present invention relates to a wiring substrate including a wiring substrate main body, a wiring pattern having connection portions to which a semiconductor element is flip-chip bonded, a solder resist from which the connection portions are exposed, and a dam provided on the solder resist to block a underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body, and a semiconductor device having the wiring substrate.
- 2. Description of Related Art
- As a semiconductor device, there is a semiconductor device including a wiring substrate main body, a wiring pattern having connection portions to which a semiconductor element is flip-chip bonded, a solder resist from which the connection portions are exposed, an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body, and a dam provided on the solder resist to block the underfill resin (see
FIG. 1 ). -
FIG. 1 is a plan view of a semiconductor device of the related art.FIG. 2 is a sectional view of the semiconductor device shown inFIG. 1 . - Referring to
FIG. 1 andFIG. 2 , asemiconductor device 200 of the related art includes awiring substrate 201, asemiconductor element 202, anunderfill resin 203, andexternal connection terminals 204. - The
wiring substrate 201 has a wiring substratemain body 211 having a semiconductor element mounting area J in which thesemiconductor element 202 is mounted, awiring pattern 212,internal connection pads 214, asolder resist 216, adam 217, andexternal connection pads 219. - The wiring substrate
main body 211 is constructed by a plurality of insulating layers, vias and wirings formed in a plurality of insulating layers, and the like. The vias and the wirings provided on the wiring substratemain body 211 electrically connect thewiring pattern 212, theinternal connection pads 214, and theexternal connection pads 219. - The
wiring pattern 212 is provided on a portion of anupper surface 211A of the wiring substratemain body 211 corresponding to the semiconductor element mounting area J. Thewiring pattern 212 hasconnection portions 222 to which abump 209 is connected respectively. - The
internal connection pads 214 are provided in an area of theupper surface 211A of the wiring substratemain body 211, which is positioned outside the semiconductor element mounting area J. Theinternal connection pads 214 are the pads that are electrically connected to awiring substrate 206, on which anelectronic component 207 is mounted, via aninternal connection terminal 208. - The
solder resist 216 is provided on theupper surface 211A of the wiring substratemain body 211. The solder resist 216 hasopening portions 224, from which an upper surface of theinternal connection pad 214 respectively, and anopening portion 225, which is formed to have a size substantially equal to the semiconductor element mounting area J when viewed from the top. Theopening portion 225 is provided so as to penetrate a portion of the solder resist 216 corresponding to the semiconductor element mounting area J. Accordingly, theopening portion 225 exposes thewiring pattern 212 in the portion arranged in the semiconductor element mounting area J. - The
dam 217 is provided on thesolder resist 216 so as to surround the semiconductor element mounting area J. The shape of thedam 217 is a frame. Thedam 217 blocks theunderfill resin 203 such that, when theunderfill resin 203 provided in a clearance between thewiring substrate 201 and thesemiconductor element 202 is formed, theunderfill resin 203 does not flow out to theinternal connection pads 214. A distance M between an inner wall of theopening portion 225 of the solder resist 216 or an end portion ofsemiconductor element 202 and an inner wall of thedam 217 is set constant around a whole circumstance of thedam 217. The distance M can be set to 1.1 mm to 1.5 mm, for example. Also, a height of the dam 217 M can be set to 20 μm, for example. - The
external connection pads 219 are provided on alower surface 211B of the wiring substratemain body 211. Theexternal connection pads 219 are used to provide theexternal connection terminals 204, which are connected to a mounting substrate (not shown) such as a mother board, or the like, respectively. - The
semiconductor element 202 is flip-chip bonded to theconnection portions 222. Concretely, thesemiconductor element 202 is electrically connected to theconnection portions 222 via thebumps 209 provided onelectrode pads 226 of thesemiconductor element 202, respectively. Lower ends of thebumps 209 are connected to theconnection portions 222. - The
underfill resin 203 prevents deterioration of reliability of thewiring pattern 212. That is, theunderfill resin 203 improves a joining strength of connection portions between thebumps 209 and theconnection portions 222, and also suppresses a occurrence of corrosion of thewiring pattern 212. - After the
semiconductor element 202 is mounted on thewiring substrate 201, theunderfill resin 203 is formed as follows. First, nozzles (not shown) for feeding the under fill resin are arranged so as to oppose to agroove 231. Here, thegroove 231 is formed at underfill resin feeding area K and between an outer peripheral end of thesemiconductor element 202 and an inner wall of the dam 217 (also seeFIG. 1 ). Then, the underfill resin is fed from the nozzles while moving the nozzles as shown in allows N shown inFIG. 1 . Thus fed underfill resin spreads over an interior of the inner circumference of thedam 217, reaches to an opposite corner of a corner where the underfill resin feeding area K and thus theunderfill resin 203 is formed. - The
external connection terminals 204 are provided on lower surfaces of theexternal connection pads 219. Theexternal connection terminals 204 are the terminals that are connected to the mounting substrate (not shown) such as the mother board, or the like (see Japanese Patent Unexamined Publication JP-A-2006-351559, for example). -
FIG. 3 is a plan view explaining the problem arisen in the semiconductor device of the related art, andFIG. 4 is a sectional view of the semiconductor device shown inFIG. 3 . InFIG. 3 andFIG. 4 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 200 shown inFIG. 1 andFIG. 2 of the related art. - In the
semiconductor device 200 of the related art, when a size of the surface of thesemiconductor element 202 is increased (concretely, when a size of thesemiconductor element 202 when viewed from the top is more than 10 mm square), an area P in which theunderfill resin 203 is not filled is formed. The area P is in a clearance between acorner portion 202B of thesemiconductor element 202 and thewiring substrate 201, which is positioned on the opposite side to acorner portion 202A of thesemiconductor element 202 surrounded with the underfill resin feeding area K,. Therefore, thewiring pattern 212 provided on the portion corresponding to this area P is not covered with theunderfill resin 203. As a result, corrosion, electromigration and etc. are caused and thus reliability of thewiring pattern 212 is lowered. - Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a wiring substrate capable of improving reliability of a wiring pattern to which a semiconductor element is flip-chip bonded, and a semiconductor device.
- According to an aspect of the present invention, there is provided a wiring substrate, comprising:
- a wiring substrate main body having a semiconductor element mounting area in which a semiconductor element is mounted;
- a wiring pattern provided on a first surface of the wiring substrate main body at a portion corresponding to the semiconductor element mounting area, and having connection portions to which the semiconductor element is flip-chip bonded;
- a solder resist provided on the first surface of the wiring substrate main body, and having an opening portion whose size is substantially equal to the semiconductor element mounting area, when viewed from a top; and
- a dam provided on an upper surface of the solder resist so as to surround the semiconductor element mounting area, for blocking an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body;
- wherein a distance between an inner wall of the opening portion of the solder resist and an inner wall of the dam is partially varied.
- According to the present invention, the distance between the inner wall of the opening portion of the solder resist and the inner wall of the dam partially varied. Therefore, when the underfill resin is to be formed in the clearance between the semiconductor element and the wiring substrate main body, a flowing direction of the underfill resin can be controlled by the inner wall of the dam. As a result, the wiring pattern located in the area where the underfill resin is hardly formed can be covered with the underfill resin with good precision, and thus reliability of the wiring pattern to which the semiconductor element is flip-chip bonded can be improved.
- According to another aspect of the present invention, there is provided a semiconductor device, which includes the above described wiring substrate; the semiconductor element that is flip-chip bonded to the connection portions; and the underfill resin provided in the clearance between the semiconductor element and the wiring substrate.
- According to the present invention, when forming the underfill resin in the clearance between the semiconductor element and the wiring substrate main body, the flowing direction of the underfill resin can be controlled by the inner wall of the dam. As a result, the wiring pattern located in the area where the underfill resin is hardly formed can be covered with the underfill resin with good precision, and thus reliability of the wiring pattern to which the semiconductor element is flip-chip bonded can be improved.
- According to the present invention, reliability of the wiring patterns to which the semiconductor element is flip-chip bonded can be improved.
-
FIG. 1 is a plan view of a semiconductor device of the related art; -
FIG. 2 is a sectional view of the semiconductor device shown inFIG. 1 ; -
FIG. 3 is a plan view explaining the problem arisen in the semiconductor device of the related art; -
FIG. 4 is a sectional view of the semiconductor device shown inFIG. 3 ; -
FIG. 5 is a plan view of a semiconductor device according to a first embodiment of the present invention; -
FIG. 6 is a sectional view of the semiconductor device shown inFIG. 5 ; -
FIG. 7 is a plan view of a semiconductor device according to a modification of the first embodiment of the present invention; -
FIG. 8 is a plan view of a semiconductor device according to a second embodiment of the present invention; -
FIG. 9 is a plan view of a semiconductor device according to a third embodiment of the present invention; -
FIG. 10 is a plan view of a semiconductor device according to a fourth embodiment of the present invention; -
FIG. 11 is a plan view of a semiconductor device according to a fifth embodiment of the present invention; -
FIG. 12 is a plan view of a semiconductor device according to a sixth embodiment of the present invention; and -
FIG. 13 is a plan view of a semiconductor device according to a seventh embodiment of the present invention. - Next, embodiments of the present invention will be explained with reference to the drawings hereinafter.
-
FIG. 5 is a plan view of a semiconductor device according to a first embodiment of the present invention, andFIG. 6 is a sectional view of the semiconductor device shown inFIG. 5 . - By reference to
FIG. 5 andFIG. 6 , asemiconductor device 10 of the first embodiment includes awiring substrate 11, asemiconductor element 12, anunderfill resin 13, and anexternal connection terminal 14. - The
wiring substrate 11 has a wiring substratemain body 31 having a semiconductor element mounting area A in which thesemiconductor element 12 is mounted, awiring pattern 33,internal connection pads 34, a solder resist 35, adam 37, andexternal connection pads 38. - The wiring substrate
main body 31 includes a plurality of insulating layers (for example, resin layers), and vias and wirings formed in a plurality of insulating layers, and the like. The vias and the wirings provided on the wiring substratemain body 31 electrically connect the wiring substratemain body 31, theinternal connection pads 34, and theexternal connection pads 38. As the wiring substratemain body 31, for example, a coreless substrate, a build-up substrate with core having a core substrate, or the like can be employed. - The
wiring pattern 33 is provided on a portion of anupper surface 31A (first surface) of the wiring substratemain body 31 corresponding to the semiconductor element mounting area A. Thewiring pattern 33 hasconnection portions 41 to which bumps 16 provided onelectrode pads 56 of thesemiconductor element 12 are connected. Thewiring pattern 33 is electrically connected to theinternal connection pads 34 and theexternal connection pads 38 by vias and wirings (not shown) provided in the wiring substratemain body 31. Thewiring pattern 33 is exposed from an openingportion 43 in the solder resist 35, described later, prior to a state that theunderfill resin 13 is formed. As thewiring pattern 33, for example, a patterned metal film (concretely, e.g., Cu film) can be used. - The
internal connection pads 34 are provided on theupper surface 31A of the wiring substratemain body 31, which is positioned outside the semiconductor element mounting area A. Upper surfaces of theinternal connection pad 34 are exposed from openingportions 44 in the solder resist 35, described later. On theinternal connection pads 34, an internal connection terminal 18 (e.g., conductive ball (e.g., a solder ball, a solder in which a core ball is provided, or the like)) or a conductive post (e.g., Cu post, or the like) is formed respectively. Theinternal connection pads 34 electrically connect asemiconductor device 20, which is loaded on thesemiconductor device 10, and thesemiconductor device 10 via theinternal connection terminals 18. As theinternal connection pad 34, for example, the patterned metal film (concretely, e.g., Cu film) can be used. When the Cu film is used as theinternal connection pad 34, for example, a Ni/Au laminated film laminated in a order of a Ni layer and an Au layer may be provided on theinternal connection pad 34. - Next, a configuration of the
semiconductor device 20 mounted on thesemiconductor device 10 will be explained hereunder. Thesemiconductor device 20 has a wiring substrate 21 (another wiring substrate) havingpads internal connection pads 25, andelectronic components pads pads 22 are connected to theelectronic component 27. Thepads 23 are connected to theelectronic component 28. Thepads internal connection pads 25. - The
internal connection pads 25 are provided on the lower surface of the wiring substrate 21 (surface of the wiring substrate 21 opposing to the semiconductor device 10). Theinternal connection pads 25 are electrically connected to thesemiconductor device 10 via theinternal connection terminals 18. As the wiring substrate 21, for example, a coreless substrate, a build-up substrate with core, or the like can be employed. Theelectronic component 27 is mounted on thepads 22. As theelectronic component 27, for example, a semiconductor element can be used. Theelectronic component 28 is mounted on thepads 23. As theelectronic component 28, for example, a chip resistor, a chip capacitor, a chip inductor, or the like can be employed. In this case, another semiconductor device constructed similarly to thesemiconductor device 10 may be stacked on thesemiconductor device 10. - The solder resist 35 is provided on the
upper surface 31A of the wiring substratemain body 31. The solder resist 35 has the openingportion 43 that is shaped to have the substantially same size (area) as the semiconductor element mounting area A when viewed from the top, and the openingportions 44 that exposes the upper surfaces of theinternal connection pads 34 respectively. The openingportion 43 exposes the portion of thewiring pattern 33 corresponding to the semiconductor element mounting area A prior to a state that theunderfill resin 13 is formed. When thicknesses of thewiring pattern 33 and theinternal connection pads 34 are 15 μm respectively, a thickness of the solder resist 35 on thewiring pattern 33 and theinternal connection pads 34 can be set to 10 μm, for example. The solder resist 35 can be formed by the printing method, for example. - The
dam 37 is provided on anupper surface 35A of the solder resist 35 so as to surround the semiconductor element mounting area A. Thedam 37 prevents theunderfill resin 13 from flowing out on the internal connection pads 34 (to block the underfill resin 13) when theunderfill resin 13 provided in the clearance between thewiring substrate 11 and thesemiconductor element 12 is formed. - A
groove portion 45 is formed between a side surface 12-1 of thesemiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of thedam 37 opposing to the side surface 12-1 of thesemiconductor device 12. A part of thisgroove portion 45 corresponds to an underfill resin feeding area B from which theunderfill resin 13 is fed. A distance D1 (first distance) is defined between the inner wall of the portion of thedam 37 opposing to the side surface 12-1 of thesemiconductor device 12 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. This distance D1 is set to a distance over which an underfill resin feeding nozzle (not shown) can feed theunderfill resin 13 to thegroove portion 45 when theunderfill resin 13 is formed. Concretely, the distance D1 can be set to 0.7 mm to 2.5 mm, for example. - Similarly, a
groove portion 46 is formed between a side surface 12-2 of thesemiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of thedam 37 opposing to the side surface 12-2 of thesemiconductor device 12. A part of thisgroove portion 46 corresponds to the underfill resin feeding area B from which theunderfill resin 13 is fed. A distance D2 (first distance) is defined between the inner wall of the portion of thedam 37 opposing to the side surface 12-2 of thesemiconductor device 12 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. This distance D2 is set to a distance over which the underfill resin feeding nozzle (not shown) can feed theunderfill resin 13 to thegroove portion 46 when theunderfill resin 13 is formed. The distance D2 is set to a distance that is substantially equal to the distance D1. Concretely, the distance D2 can be set to 0.7 mm to 2.5 mm, for example. - A
groove portion 47 is formed between a side surface 12-3 of thesemiconductor device 12 that is shaped into a quadrangle when viewed from the top, and an inner wall of a portion of thedam 37 opposing to the side surface 12-3 of thesemiconductor device 12. Thisgroove portion 47 has afirst groove portion 48 and asecond groove portion 49. - The
first groove portion 48 is formed such that a width of thefirst groove portion 48 is narrowed continuously as a position goes from acorner 12B of thesemiconductor device 12 toward acorner 12C of thesemiconductor device 12. Thecorner 12B is defined between the side surface 12-2 of thesemiconductor device 12 and the side surface 12-3 of thesemiconductor device 12. Thecorner 12C is defined between the side surface 12-3 of thesemiconductor device 12 and a side surface 12-4 of thesemiconductor device 12. - In other words, a part of the inner wall of the portion of the
dam 37 constituting thefirst groove portion 48 is formed like such a taper shape, when viewed from the top, that the inner wall approaches to the side surface 12-3 of thesemiconductor device 12 from thecorner 12B to thecorner 12C. - Thus, distance (second distance) between the inner wall of the portion of the
dam 37 constituting thefirst groove portion 48 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is made continuously smaller. Concretely, within thefirst groove portion 47, a distance D3 of the portion which is largest can be set to 0.7 mm to 2.5 mm, for example, and a distance D4 of the portion which is smallest can be set to 0.2 mm, for example. - The
second groove portion 49 is integrated with thefirst groove portion 48. A width of thesecond groove portion 49 is narrower than widths of thegroove portions dam 37 constituting thesecond groove portion 49 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. This distance D5 can be set to 0.2 mm, for example. - Similar to the
groove portion 47, agroove portion 51 is defined between the side surface 12-4 of thesemiconductor device 12 that is shaped into a quadrangle when viewed from the top, and the inner wall of the portion of thedam 37 opposing to the side surface 12-4 of thesemiconductor device 12. Thisgroove portion 51 has afirst groove portion 52 and asecond groove portion 53. - Similarly to the
first groove portion 48 of thegroove portion 47, thefirst groove portion 52 is constructed such that a groove width of thefirst groove portion 52 is narrowed continuously as a position goes from acorner 12D of thesemiconductor device 12 toward thecorner 12C of thesemiconductor device 12. Thecorner 12D is defined between the side surface 12-1 of thesemiconductor device 12 and the side surface 12-4 of thesemiconductor device 12. Thecorner 12C is defined between the side surface 12-3 of thesemiconductor device 12 and the side surface 12-4 of thesemiconductor device 12. - In other words, the inner wall of the portion of the
dam 37 constituting thefirst groove portion 52 is formed like such a taper shape, when viewed from the top, that the inner wall comes close to the side surface 12-4 of thesemiconductor device 12 from thecorner 12D to thecorner 12C. - Thus, distance (second distance) between the inner wall of the portion of the
dam 37 constituting thefirst groove portion 52 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is made continuously smaller. Concretely, within the groovefirst groove portion 52, a distance D6 of the portion which is largest can be set to 0.7 mm to 2.5 mm, for example, and a distance D7 of the portion which is smallest can be set to 0.2 mm, for example. - The
second groove portion 53 is integrated with thefirst groove portion 52. A width of thesecond groove portion 53 is narrower than widths of thegroove portions dam 37 constituting thesecond groove portion 53 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. This distance D8 can be set to 0.2 mm, for example. - The
dam 37 constructed has a shape such that the distance between the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 and the inner wall of thedam 37 is partially varied. A height of thedam 37 can be set to 20 μm, for example. Also, as the material of thedam 37, the solder resist can be employed, for example. When the solder resist is employed as the material of thedam 37, thedam 37 can be formed by the screen printing method, for example. - In this manner, distances D1, D2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the
dam 37 is set smaller than distances D5, D8 (second distance) from the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B to the inner wall of thedam 37. In other words, the distance between the inner wall of the openingportion 43 of the solder resist 35 and the inner wall of thedam 37 is partially varied. - Therefore, when forming the
underfill resin 13 in the clearance between thewiring substrate 11 and thesemiconductor element 12 that is flip-chip bonded to thewiring substrate 11, the flowing direction of the fedunderfill resin 13 can be controlled by the inner wall of thedam 37 such that theunderfill resin 13 is directed to the clearance between thesemiconductor element 12 and thewiring substrate 11 and sufficiently reaches to thecorner 12C which is opposing corner of thecorner 12A where the underfill resin feeding area B is formed. As a result, the portion of thewiring pattern 33 exposed from the openingportion 43 can be covered with theunderfill resin 13 with good precision, and thus reliability of thewiring pattern 33 to which thesemiconductor element 12 is flip-chip bonded can be improved. - Also, distance (second distance) between the inner wall of the portion of the
dam 37 constituting thefirst groove portions portion 43 is made continuously smaller. Therefore, the flowing direction of theunderfill resin 13 can be controlled such that theunderfill resin 13 is directed to an area of thewiring pattern 33, which is located near thecorner 12C of the semiconductor element 12 (a corner positioned on the opposite side to acorner 12A between the side surface 12-1 of thesemiconductor element 12 and the side surface 12-2 of the semiconductor element 12) and in which it was difficult to form theunderfill resin 13 in the related art. As a result, reliability of thewiring pattern 33 can be further improved. - The
external connection pads 38 are provided on alower surface 31B of the wiring substratemain body 31. Theexternal connection pads 38 are electrically connected to thewiring pattern 33 and theinternal connection pads 34 via vias and wiring (not shown) provided in the wiring substratemain body 31. Theexternal connection pads 38 used to provide theexternal connection terminal 14 respectively. As theexternal connection pads 38, for example, the patterned metal film (e.g., Cu film) can be employed. - According to the wiring substrate of the present embodiment, distances D1, D2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the
dam 37 is set smaller than distances D5, D8 (second distance) between the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B and the inner wall of the dam 37 (distance between the inner wall of theopening 43 of the solder resist 35 and the inner wall of thedam 37 is partially varied). Therefore, when forming theunderfill resin 13 in the clearance between thewiring substrate 11 and thesemiconductor element 12 that is flip-chip bonded to thewiring substrate 11, the flowing direction of theunderfill resin 13 can be controlled by the inner wall of thedam 37 such that theunderfill resin 13 is directed to the clearance between thesemiconductor element 12 and thewiring substrate 11. As a result, the portion of thewiring pattern 33 exposed from the openingportion 43 can be covered with theunderfill resin 13 with good precision, and thus reliability of thewiring pattern 33 to which thesemiconductor element 12 is flip-chip bonded can be improved. - Also, distance (second distance) between the inner wall of the portion of the
dam 37 constituting thefirst groove portions portion 43 is made continuously smaller. Therefore, the flowing direction of theunderfill resin 13 can be controlled such that theunderfill resin 13 is directed to an area of thewiring pattern 33, which is located near thecorner 12C of the semiconductor element 12 (a corner positioned on the opposite side to acorner 12A between the side surface 12-1 of thesemiconductor element 12 and the side surface 12-2 of the semiconductor element 12) and in which it was difficult to form theunderfill resin 13 in the related art. As a result, reliability of thewiring pattern 33 can be further improved. In particular, the above configuration is effective for the case where an outer shape size of thesemiconductor element 12 when viewed from the top is large (the case where an outer shape size of thesemiconductor element 12 when viewed from the top is more than 10 mm square). - The
semiconductor element 12 has theelectrode pads 56 on which thebumps 16 are provided. Thesemiconductor element 12 is flip-chip bonded to theconnection portions 41 of thewiring pattern 33. Thesemiconductor element 12 is electrically connected to thewiring substrate 11 via thebumps 16. An outer shape size of thesemiconductor element 12 when viewed from the top is more than 10 mm square, for example. Thebumps 16 are fixed to theconnection portions 41 by a solder. As thebumps 16, for example, a solder bump, an Au bump, or the like can be employed. - The
underfill resin 13 is provided so as to fill the clearance between thewiring substrate 11 and thesemiconductor element 12 that is flip-chip bonded to thewiring substrate 11. Theunderfill resin 13 covers the portion of thewiring pattern 33 exposed from the openingportion 43 and seals thebumps 16. Theunderfill resin 13 is fed to the clearance between thewiring substrate 11 and thesemiconductor element 12 through portions of thegroove portions groove portions underfill resin 13 is fed while moving the underfill resin feeding nozzle (not shown) as shown in allows C. As the material of theunderfill resin 13, for example, an epoxy resin can be employed. - The
external connection terminals 14 are provided on the lower surfaces of theexternal connection pads 38 respectively. Theexternal connection terminals 14 connect (mount) thesemiconductor device 10 to the pads (not shown) of the mounting substrate such as the mother board, or the like. As theexternal connection terminal 14, for example, a solder ball can be employed. - According to the semiconductor device of the present embodiment, distances D1, D2 (first distance) between the side wall of the portion of the solder resist 35 corresponding to the underfill resin feeding area B and the inner wall of the
dam 37 is set smaller than distances D5, D8 (second distance) between the side wall of the portion of the solder resist 35 not corresponding to the underfill resin feeding area B and the inner wall of thedam 37. That is, distance between the inner wall of the openingportion 43 of the solder resist 35 and the inner wall of thedam 37 is partially varied. Therefore, when forming theunderfill resin 13 in the clearance between thewiring substrate 11 and thesemiconductor element 12 that is flip-chip bonded to thewiring substrate 11, the flowing direction of theunderfill resin 13 can be controlled by the inner wall of thedam 37 such that theunderfill resin 13 is directed to the clearance between thesemiconductor element 12 and thewiring substrate 11. As a result, the portion of thewiring pattern 33 exposed from the openingportion 43 can be covered with theunderfill resin 13 with good precision, and thus reliability of thewiring pattern 33 to which thesemiconductor element 12 is flip-chip bonded can be improved. - Also, distance (second distance) between the inner wall of the portion of the
dam 37 constituting thefirst groove portions portion 43 is made continuously smaller. Therefore, the flowing direction of theunderfill resin 13 can be controlled such that theunderfill resin 13 is directed to an area of thewiring pattern 33, which is located near thecorner 12C of the semiconductor element 12 (a corner positioned on the opposite side to acorner 12A between the side surface 12-1 of thesemiconductor element 12 and the side surface 12-2 of the semiconductor element 12) and in which it was difficult to form theunderfill resin 13 in the related art. As a result, reliability of thewiring pattern 33 can be further improved. In particular, the above configuration is effective for the case where an outer shape size of thesemiconductor element 12 when viewed from the top is large (the case where an outer shape size of thesemiconductor element 12 when viewed from the top is more than 10 mm square). -
FIG. 7 is a plan view of a semiconductor device according to a modification of the first embodiment of the present invention. InFIG. 7 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 10 in the first embodiment. - By reference to
FIG. 7 , asemiconductor device 60 according to a modification of the first embodiment is similar to thesemiconductor device 10, except that a notchedportion 61 is provided on thedam 37 provided on thesemiconductor device 10 in the first embodiment. - The notched
portion 61 is formed on the inner wall of the portion of thedam 37 opposing to thecorner 12C of thesemiconductor element 12, which is positioned on the opposite side to thecorner 12A of thesemiconductor element 12 opposing to the underfill resin feeding area B. - In this manner, the notched
portion 61 is formed on the inner wall of the portion of thedam 37 opposing to thecorner 12C of thesemiconductor element 12, which is positioned on the opposite side to thecorner 12A of thesemiconductor element 12 opposing to the underfill resin feeding area B. Therefore, when theunderfill resin 13 is formed in the clearance between thesemiconductor element 12 and thewiring substrate 11, theextra underfill resin 13 can be stored in the notchedportion 61. As a result, such a situation can be prevented that theextra underfill resin 13 gets over thedam 37 and flows out onto theinternal connection pads 34. - In this case, the
semiconductor device 60 according to the modification of the first embodiment can achieve the similar advantages as those of thesemiconductor device 10 in the first embodiment. -
FIG. 8 is a plan view of a semiconductor device according to a second embodiment of the present invention. InFIG. 8 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 10 in the first embodiment. - By reference to
FIG. 8 , asemiconductor device 70 according to the second embodiment is similar to thesemiconductor device 10, except that adam 71 is provided instead of thedam 37 provided on thesemiconductor device 10 in the first embodiment. - The
dam 71 is similar to thedam 37, except that a shape of the portion of the dam 37 (seeFIG. 5 ) forming thefirst groove portions second groove portions semiconductor device 70 does not have thefirst groove portions - In this case, the
semiconductor device 70 according to the second embodiment can achieve the similar advantages as those of thesemiconductor device 10 in the first embodiment, too. -
FIG. 9 is a plan view of a semiconductor device according to a third embodiment of the present invention. InFIG. 9 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 70 in the second embodiment. - By reference to
FIG. 9 , asemiconductor device 80 according to the third embodiment is similar to thesemiconductor device 70, except that adam 81 is provided instead of thedam 71 provided on thesemiconductor device 70 in the second embodiment. - The
dam 81 is similar to the dam 71 (seeFIG. 8 ), except that aprojection portion 83 and aprojection portion 84 are provided. Theprojection portion 83 is provided on the portion that is positioned near thecorner 12B and opposes to the side surface of thesemiconductor element 12. Theprojection portion 84 is provided on the portion that is positioned near thecorner 12D and opposes to the side surface of thesemiconductor element 12. - The
projection portion 83 has afirst projection portion 86 and asecond projection portion 87. Thefirst projection portion 86 is provided more closely to thecorner 12A side of thesemiconductor element 12 than thesecond projection portion 87. Distance D9 (second distance) between aside surface 86A of thefirst projection portion 86 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is set smaller than distance D1 (first distance). Concretely, when the distance D1 is 1 mm, the distance D9 can be set to 0.5 mm, for example. - The
second projection portion 87 is provided more closely to thecorner 12D side of thesemiconductor element 12 than thefirst projection portion 86. Thesecond projection portion 87 is made integral with thefirst projection portion 86. Distance D10 (second distance) between aside surface 87A of thesecond projection portion 87 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is set smaller than distance D1 (first distance). Concretely, when the distance D1 is 1 mm, the distance D10 can be set to 0.2 mm, for example. - The
projection portion 83 is provided to stepwisely reduce distances D9, D10 (second distances) between the side surfaces 86A, 87A of theprojection portion 83 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. - The
projection portion 84 has afirst projection portion 88 and asecond projection portion 89. Thefirst projection portion 88 is provided more closely to thecorner 12A side of thesemiconductor element 12 than thesecond projection portion 89. Distance D11 (second distance) between aside surface 88A of thefirst projection portion 88 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is set smaller than distance D2 (first distance). Concretely, when the distance D2 is 1 mm, the distance D11 can be set to 0.5 mm, for example. - The
second projection portion 89 is provided more closely to thecorner 12B side of thesemiconductor element 12 than thefirst projection portion 88. Thesecond projection portion 89 is made integral with thefirst projection portion 88. Distance D12 (second distance) between aside surface 89A of thesecond projection portion 89 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43 is set smaller than distance D2 (first distance). Concretely, when the distance D2 is 1 mm, the distance D12 can be set to 0.2 mm, for example. - The
projection portion 84 is provided to stepwisely reduce distances D11, D12 (second distances) between the side surfaces 88A, 89A of theprojection portion 84 and the side wall of the portion of the solder resist 35 corresponding to the side surface of the openingportion 43. - According to the semiconductor device of the present embodiment, controlling performance of the flowing direction of the
underfill resin 13 can be improved by providing theprojection portions dam 81. Therefore, thewiring pattern 33 can be covered with theunderfill resin 13 with high precision, and thus reliability of thewiring pattern 33 can be further improved. - Also, the
semiconductor device 80 according to the present embodiment can achieve the similar advantages as those of thesemiconductor device 70 in the second embodiment. -
FIG. 10 is a plan view of a semiconductor device according to a fourth embodiment of the present invention. InFIG. 10 , a reference symbol E denotes an area which is provided between thesemiconductor element 12 and thewiring substrate 11 and to which theunderfill resin 13 is fed (referred to as an “underfill resin feeding area E” hereinafter). Also, inFIG. 10 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 70 in the second embodiment. - By reference to
FIG. 10 , asemiconductor device 95 according to the fourth embodiment is similar to thesemiconductor device 70, except that adam 96 is provided instead of thedam 71 provided on thesemiconductor device 70 in the second embodiment. - The
dam 96 is similar to thedam 71, except that an inner wall of the portion of thedam 96 opposing to the side surface 12-2 of thesemiconductor element 12 is positioned closer to the side surface 12-2 of thesemiconductor element 12 such that thegroove portion 53 provided in thedam 71 is formed instead of thegroove portion 46 provided in the dam 71 (seeFIG. 8 ), aprojection portion 97 is provided on the portion that is positioned near thecorner 12A and opposes to the side surface 12-4 of thesemiconductor element 12, and aprojection portion 98 is provided on the portion that is positioned near thecorner 12D and opposes to the side surface 12-4 of thesemiconductor element 12. - The
projection portion 97 makes distance D13 (second distance) between the side wall of the portion of the solder resist 35 corresponding to areas except the underfill resin feeding area E and aninner wall 97A of theprojection portion 97 smaller than the distance D1 (first distance). Concretely, when the distance D1 is 1 mm, the distance D13 can be set to 0.2 mm, for example. A side wall of the portion of theprojection portion 97 opposing to theprojection portion 98 is formed like a taper shape, when viewed from the top, to guide theunderfill resin 13 to a clearance between thesemiconductor element 12 and thewiring substrate 11. - The
projection portion 98 makes distance D14 (second distance) between the side wall of the portion of the solder resist 35 corresponding to areas except the underfill resin feeding area E and aninner wall 98A of theprojection portion 98 smaller than the distance D1 (first distance). Concretely, when the distance D1 is 1 mm, the distance D14 can be set to 0.2 mm, for example. A side wall of the portion of theprojection portion 98 opposing to theprojection portion 97 is formed like a taper shape, when viewed from the top, to guide theunderfill resin 13 to a clearance between thesemiconductor element 12 and thewiring substrate 11. - In this case, the
semiconductor device 95 according to the fourth embodiment can achieve the similar advantages as those of thesemiconductor device 70 in the second embodiment. -
FIG. 11 is a plan view of a semiconductor device according to a fifth embodiment of the present invention. InFIG. 11 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 95 in the fourth embodiment. - By reference to
FIG. 11 , asemiconductor device 105 according to the fifth embodiment is similar to thesemiconductor device 95, except that adam 106 is provided instead of thedam 96 provided on thesemiconductor device 95 in the fourth embodiment. - The
dam 106 is similar to thedam 96, except that theprojection portions FIG. 10 ) are removed from the constituent elements. - In this case, the
semiconductor device 105 according to the fifth embodiment can achieve the similar advantages as those of thesemiconductor device 95 in the fourth embodiment. -
FIG. 12 is a plan view of a semiconductor device according to a sixth embodiment of the present invention. InFIG. 12 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 10 in the first embodiment. - By reference to
FIG. 12 , asemiconductor device 110 according to the sixth embodiment is similar to thesemiconductor device 10, except that the solder resist 35 is provided on the configuration of thesemiconductor device 10 in the first embodiment to cover the portion of thewiring pattern 33 corresponding to the semiconductor element mounting area A except theconnection portions 41. - In this manner, the solder resist 35 is provided so as to cover the portion of the
wiring pattern 33 corresponding to the semiconductor element mounting area A except theconnection portions 41. Therefore, a flow rate of theunderfill resin 13 flowing through the clearance between thesemiconductor element 12 and thewiring substrate 11 can be increased. - In this case, the
semiconductor device 110 according to the sixth embodiment can achieve the similar advantages as those of thesemiconductor device 10 in the first embodiment. - Also, the
dam dam 37 provided on thesemiconductor device 110. Also, the notchedportion 61 shown inFIG. 7 may be provided on thedam semiconductor device 110. -
FIG. 13 is a plan view of a semiconductor device according to a seventh embodiment of the present invention. InFIG. 13 , the same reference symbols are affixed to the same constituent portions as those of thesemiconductor device 10 in the first embodiment. - By reference to
FIG. 13 , asemiconductor device 120 according to the seventh embodiment is similar to thesemiconductor device 10, except that asemiconductor element 121 in which theelectrode pads 56 are arranged as peripheral electrodes and awiring substrate 122 are provided instead of thesemiconductor element 12 and thewiring substrate 11 provided on thesemiconductor device 10 of the first embodiment. - The
wiring substrate 122 is similar to the wiring substrate 11 (seeFIG. 6 ), except that theconnection portions 41 are arranged on theupper surface 31A of the portion of the wiring substratemain body 31 opposing to theelectrode pads 56 provided on thesemiconductor element 121. - In this fashion, even when the
dam 37 explained in the first embodiment is provided on thesemiconductor device 120 having thesemiconductor element 121 in which theelectrode pads 56 are arranged as peripheral electrodes, the similar advantages to those of thesemiconductor device 10 in the first embodiment can be achieved. - Also, the
dam dam 37 provided on thesemiconductor device 120. Also, the notchedportion 61 shown inFIG. 7 may be provided on thedam semiconductor device 120. - With the above, the preferred embodiments of the present invention are described in detail. But the present invention is not limited to the particular embodiments. Various variations and modifications can be applied within a range of a gist of the invention set forth in claims.
- For example, the
dam internal connection pad 34 is not provided. - The present invention is applicable to the wiring substrate including the wiring substrate main body, the wiring pattern having connection portions to which the semiconductor element is flip-chip bonded, the solder resist from which the connection portions are exposed, and the dam provided on the solder resist and provided in the clearance between the semiconductor element and the wiring substrate main body to block the underfill resin, and the semiconductor device using the same.
- While the invention has been described in connection with the exemplary embodiments, it will be obvious to those skilled in the art that various changes and modifications may be made therein without departing from the present invention, and it is aimed, therefore, to cover in the appended claim all such changes and modifications as fall within the true spirit and scope of the present invention.
Claims (10)
1. A wiring substrate, comprising:
a wiring substrate main body having a semiconductor element mounting area in which a semiconductor element is mounted;
a wiring pattern provided on a first surface of the wiring substrate main body at a portion corresponding to the semiconductor element mounting area, and having connection portions to which the semiconductor element is flip-chip bonded;
a solder resist provided on the first surface of the wiring substrate main body, and having an opening portion whose size is substantially equal to the semiconductor element mounting area, when viewed from a top; and
a dam provided on an upper surface of the solder resist so as to surround the semiconductor element mounting area, for blocking an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body,
wherein a distance between an inner wall of the opening portion of the solder resist and an inner wall of the dam is partially varied.
2. The wiring substrate according to claim 1 , wherein
an underfill resin feeding area, from which the underfill resin is fed, is defined at a portion of a clearance between the semiconductor element and the wiring substrate main body,
a first distance is defined between the inner wall of the opening portion of the solder resist and the inner wall of the dam in the underfill resin feeding area,
a second distance is defined between the inner wall of the opening portion of the solder resist and the inner wall of the dam in are area other than the underfill resin feeding area,
the first distance is larger than the second distance.
3. The wiring substrate according to claim 2 , wherein the second distance is decreased stepwisely or continuously.
4. The wiring substrate according to claim 1 , further comprising:
a pad to which another wiring substrate is mounted and which is provided on the wiring substrate main body at a position outside the dam.
5. The wiring substrate according to claim 4 , further comprising:
an external connection pad which is electrically connected to the wiring pattern and is provided on a second surface of the wiring substrate main body, wherein
the second surface is positioned on an opposite side to the first surface.
6. A semiconductor device, comprising: a wiring substrate, comprising:
a wiring substrate main body having a semiconductor element mounting area in which a semiconductor element is mounted;
a wiring pattern provided on a first surface of the wiring substrate main body at a portion corresponding to the semiconductor element mounting area, and having connection portions to which the semiconductor element is flip-chip bonded;
a solder resist provided on the first surface of the wiring substrate main body and having an opening portion whose size is substantially equal to the semiconductor element mounting area, when viewed from a top; and
a dam provided on an upper surface of the solder resist so as to surround the semiconductor element mounting area, for blocking an underfill resin provided in a clearance between the semiconductor element and the wiring substrate main body,
wherein a distance between an inner wall of the opening portion of the solder resist and an inner wall of the dam is partially varied;
the semiconductor element flip-chip bonded to the connection portions; and
the underfill resin provided in a clearance between the semiconductor element and the wiring substrate.
7. The wiring substrate according to claim 6 , wherein
an underfill resin feeding area, from which the underfill resin is fed, is defined at a portion of a clearance between the semiconductor element and the wiring substrate main body,
a first distance is defined between the inner wall of the opening portion of the solder resist and the inner wall of the dam in the underfill resin feeding area,
a second distance is defined between the inner wall of the opening portion of the solder resist and the inner wall of the dam in are area other than the underfill resin feeding area,
the first distance is larger than the second distance.
8. The wiring substrate according to claim 7 , wherein the second distance is decreased stepwisely or continuously.
9. The wiring substrate according to claim 6 , further comprising:
a pad to which another wiring substrate is mounted and which is provided on the wiring substrate main body at a position outside the dam.
10. The wiring substrate according to claim 9 , further comprising:
an external connection pad which is electrically connected to the wiring pattern and is provided on a second surface of the wiring substrate main body, wherein
the second surface is positioned on an opposite side to the first surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US13/356,919 US8693211B2 (en) | 2007-12-12 | 2012-01-24 | Wiring substrate and semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2007321081A JP5162226B2 (en) | 2007-12-12 | 2007-12-12 | Wiring substrate and semiconductor device |
JP2007-321081 | 2007-12-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US13/356,919 Division US8693211B2 (en) | 2007-12-12 | 2012-01-24 | Wiring substrate and semiconductor device |
Publications (1)
Publication Number | Publication Date |
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US20090154128A1 true US20090154128A1 (en) | 2009-06-18 |
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Family Applications (2)
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US12/331,673 Abandoned US20090154128A1 (en) | 2007-12-12 | 2008-12-10 | Wiring substrate and semiconductor device |
US13/356,919 Active 2029-04-18 US8693211B2 (en) | 2007-12-12 | 2012-01-24 | Wiring substrate and semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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US13/356,919 Active 2029-04-18 US8693211B2 (en) | 2007-12-12 | 2012-01-24 | Wiring substrate and semiconductor device |
Country Status (3)
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US (2) | US20090154128A1 (en) |
JP (1) | JP5162226B2 (en) |
KR (1) | KR101578175B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US20120120624A1 (en) | 2012-05-17 |
JP2009147007A (en) | 2009-07-02 |
KR101578175B1 (en) | 2015-12-16 |
JP5162226B2 (en) | 2013-03-13 |
US8693211B2 (en) | 2014-04-08 |
KR20090063117A (en) | 2009-06-17 |
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