US20090200667A1 - Ohmic contact film in semiconductor device - Google Patents

Ohmic contact film in semiconductor device Download PDF

Info

Publication number
US20090200667A1
US20090200667A1 US12/426,061 US42606109A US2009200667A1 US 20090200667 A1 US20090200667 A1 US 20090200667A1 US 42606109 A US42606109 A US 42606109A US 2009200667 A1 US2009200667 A1 US 2009200667A1
Authority
US
United States
Prior art keywords
ohmic contact
contact film
chemical element
layer
group chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/426,061
Inventor
Chiung-Chi Tsai
Tzong-Liang Tsai
Yu-Chu Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Huga Optotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huga Optotech Inc filed Critical Huga Optotech Inc
Priority to US12/426,061 priority Critical patent/US20090200667A1/en
Publication of US20090200667A1 publication Critical patent/US20090200667A1/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUGA OPTOTECH INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Definitions

  • the invention relates to an ohmic contact film, and more particularly, to one formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device.
  • Light-emitting diodes can be applied to various kinds of equipment, such as optical display equipment, regulatory signs, telecommunication equipment, and illuminating equipment. Light-emitting diodes, distinct from conventional light sources, are applicable to different industries.
  • the radiating principle of the light-emitting diodes is that the bonding of electrons and holes in the light-emitting layer of P-type and N-type semiconductors forms photons to generate light on forward bias. Because the P-type GaN semiconductor is hard to be doped, the contact of P-type GaN semiconductor and conductive layer produces higher resistance and consequently decreases the efficiency of P-type GaN semiconductor.
  • Taiwanese Patent No. 459,407 provides a proposal to reduce the contact resistance between a P-type GaN semiconductor layer and a conductive layer.
  • FIG. 1 illustrates a light-emitting diode structure having an n+ type reverse tunneling layer.
  • the light-emitting diode structure includes an insulated sapphire substrate 11 , a GaN buffer layer 12 , an N-type GaN contact layer 13 , an N-type AlGaN constraint layer 14 , an InGaN light-emitting layer 15 , a P-type AlGaN constraint layer 16 , a P-type GaN contact layer 17 , an n+ type reverse tunneling layer 18 , a transparent conductive layer 19 , a first electrode 21 , and a second electrode 22 .
  • the GaN buffer layer 12 is formed on the insulated sapphire substrate 11 .
  • An N-type GaN contact layer 13 is formed on the GaN buffer layer 12 such that a partial area of the N-type GaN contact layer 13 is exposed.
  • the first electrode 21 is formed on the exposed partial area of the N-type GaN contact layer 13 .
  • the N-type AlGaN constraint layer 14 is formed on the N-type GaN contact layer 13 .
  • the InGaN light-emitting layer 15 is formed on the N-type AlGaN constraint layer 14 .
  • the P-type AlGaN constraint layer 16 is formed on the InGaN light-emitting layer 15 .
  • the P-type GaN contact layer 17 is formed on the P-type AlGaN constraint layer 16 .
  • the n+ type reverse tunneling layer 18 is formed on the P-type GaN contact layer 17 .
  • the transparent conductive layer 19 is formed on the n+ type reverse tunneling layer 18 such that a partial area of the n+ type reverse tunneling layer 18 is exposed.
  • the second electrode 22 is formed on the exposed partial area of the n+ type reverse tunneling layer 18 and contacts the transparent conductive layer 19 .
  • the light-emitting diode improves the ohmic contact between the P-type GaN contact layer 17 and the transparent conductive layer 19 by adding an n+ type reverse tunneling layer 18 between them.
  • the finished products of light-emitting diodes are not stable and have a higher production cost as well.
  • a scope of the invention is to provide an ohmic contact film capable of improving the ohmic contact between the doped semiconductor material layer and the conductive material layer.
  • a semiconductor light-emitting device with the ohmic contact film has an easier manufacturing process; it also increases the stability for production and consequently has lower cost for production.
  • a scope of the invention is to provide an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device.
  • the composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula M x N y , where M represents the II group chemical element, N represents the V group chemical element, 1 ⁇ x ⁇ 3, 1 ⁇ y ⁇ 3, and x and y are molar numbers.
  • M x N y the general formula M x N y
  • M represents the II group chemical element
  • N represents the V group chemical element
  • 1 ⁇ x ⁇ 3, 1 ⁇ y ⁇ 3 1 ⁇ y ⁇ 3
  • x and y are molar numbers.
  • an ohmic contact film is provided.
  • composition of the ohmic contact film is represented by the general formula M x Q z N y , where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1 ⁇ x ⁇ 3, 1 ⁇ y ⁇ 3, 1 ⁇ z ⁇ 3, and x, y and z are molar numbers.
  • FIG. 1 illustrates a light-emitting diode structure having an n+ type reverse tunneling layer.
  • FIG. 2 is the schematic sectional view of the ohmic contact film according to a preferred embodiment of the invention.
  • FIG. 3 is the drawing of the I-V test conducted for semiconductor light-emitting devices with and without the ohmic contact film.
  • FIG. 2 is the schematic sectional view of the ohmic contact film 32 according to a preferred embodiment of the invention.
  • the ohmic contact film 32 is formed between a doped semiconductor material layer 30 and a conductive material layer 34 of a semiconductor device.
  • the semiconductor device can be a semiconductor light-emitting device.
  • the dopant type of the doped semiconductor material layer 30 can be N-type or P-type.
  • the conductive material layer 34 can be Ni/Au, ITO, CTO, TiWN, In 2 O 3 , SnO 2 , CdO, ZnO, CuGaO 2 , or SrCu 2 O 2 .
  • the composition of the ohmic contact film 32 is represented by the general formula M x N y , where M represents the II group chemical element, N represents the V group chemical element, 1 ⁇ x ⁇ 3, 1 ⁇ y ⁇ 3, and x and y are molar numbers.
  • the II group chemical element in the ohmic contact film 32 can be Zn, Be, Mg, Ca, Sr, Ba, or Ra.
  • the V group chemical element in the ohmic contact film 32 can be N, P, As, Sb, or Bi.
  • the ohmic contact film 32 is formed at a temperature ranging from 400° C. to 1100° C.
  • the thickness of the ohmic contact film 32 is in a range of from 0.5 Angstroms to 500 Angstroms.
  • Table 1 shows the results of a contact resistance test of a combination structure with and without the ohmic contact film 32 .
  • the combination structure includes a doped semiconductor material layer 30 of P-type GaN and a conductive material layer 34 of ITO.
  • the ohmic contact film 32 formed between the P-type GaN and the ITO, has the composition of MgN, where Mg is selected from the II group chemical element, and N is selected from the V group chemical element.
  • MgN Mg is selected from the II group chemical element
  • N is selected from the V group chemical element.
  • the combination structure with MgN as the ohmic contact film 32 has a contact resistance lower than that without MgN by about an order. Therefore, the ohmic contact film 32 of MgN indeed improves the ohmic contact between the P-type GaN and the ITO.
  • FIG. 3 is the drawing of an I-V test conducted for semiconductor light-emitting devices with and without the ohmic contact film 32 .
  • the ohmic contact film 32 included in the semiconductor light-emitting device, is prepared by the reaction between ammonia and Mg, and the composition of the ohmic contact film 32 is Mg 3 N 2 .
  • the semiconductor light-emitting device with Mg 3 N 2 as the ohmic contact film 32 has a lower resistance value than that without Mg 3 N 2 .
  • the composition of the ohmic contact film 32 in FIG. 2 is represented by the general formula M x Q z N y , where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1 ⁇ x ⁇ 3, 1 ⁇ y ⁇ 3, 1 ⁇ z ⁇ 3, and x, y and z are molar numbers.
  • the II group chemical element in the ohmic contact film 32 can be Zn, Be, Mg, Ca, Sr, Ba, or Ra.
  • the IV group chemical element in the ohmic contact film 32 can be C, Si, Ge, Si, or Pb.
  • the V group chemical element in the ohmic contact film 32 can be N, P, As, Sb, or Bi.
  • the composition of the ohmic contact film 32 can be MgSiN 2 .
  • the ohmic contact film according to the invention is capable of improving the ohmic contact between the doped semiconductor material layer and the conductive material layer.
  • the semiconductor light-emitting device with the ohmic contact film has an easier manufacturing process; it also increases the stability for production and consequently has lower cost for production.
  • the ohmic contact film provided by the invention is certainly applicable to other type of semiconductor devices not described in the specification.

Abstract

The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.

Description

  • This application is a Division of currently pending application U.S. Ser. No. 11/797,851, entitled “OHMIC CONTACT FILM IN SEMICONDUCTOR DEVICE” and filed on May 8, 2007
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to an ohmic contact film, and more particularly, to one formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device.
  • 2. Description of the Prior Art
  • Light-emitting diodes can be applied to various kinds of equipment, such as optical display equipment, regulatory signs, telecommunication equipment, and illuminating equipment. Light-emitting diodes, distinct from conventional light sources, are applicable to different industries.
  • The radiating principle of the light-emitting diodes is that the bonding of electrons and holes in the light-emitting layer of P-type and N-type semiconductors forms photons to generate light on forward bias. Because the P-type GaN semiconductor is hard to be doped, the contact of P-type GaN semiconductor and conductive layer produces higher resistance and consequently decreases the efficiency of P-type GaN semiconductor.
  • Taiwanese Patent No. 459,407 provides a proposal to reduce the contact resistance between a P-type GaN semiconductor layer and a conductive layer. Referring to FIG. 1, FIG. 1 illustrates a light-emitting diode structure having an n+ type reverse tunneling layer. The light-emitting diode structure includes an insulated sapphire substrate 11, a GaN buffer layer 12, an N-type GaN contact layer 13, an N-type AlGaN constraint layer 14, an InGaN light-emitting layer 15, a P-type AlGaN constraint layer 16, a P-type GaN contact layer 17, an n+ type reverse tunneling layer 18, a transparent conductive layer 19, a first electrode 21, and a second electrode 22. The GaN buffer layer 12 is formed on the insulated sapphire substrate 11. An N-type GaN contact layer 13 is formed on the GaN buffer layer 12 such that a partial area of the N-type GaN contact layer 13 is exposed. The first electrode 21 is formed on the exposed partial area of the N-type GaN contact layer 13. The N-type AlGaN constraint layer 14 is formed on the N-type GaN contact layer 13. The InGaN light-emitting layer 15 is formed on the N-type AlGaN constraint layer 14. The P-type AlGaN constraint layer 16 is formed on the InGaN light-emitting layer 15. The P-type GaN contact layer 17 is formed on the P-type AlGaN constraint layer 16. The n+ type reverse tunneling layer 18 is formed on the P-type GaN contact layer 17. The transparent conductive layer 19 is formed on the n+ type reverse tunneling layer 18 such that a partial area of the n+ type reverse tunneling layer 18 is exposed. The second electrode 22 is formed on the exposed partial area of the n+ type reverse tunneling layer 18 and contacts the transparent conductive layer 19.
  • The light-emitting diode improves the ohmic contact between the P-type GaN contact layer 17 and the transparent conductive layer 19 by adding an n+ type reverse tunneling layer 18 between them.
  • However, due to a complex manufacturing process and difficult control of the n+ type reverse tunneling layer 18, the finished products of light-emitting diodes are not stable and have a higher production cost as well.
  • Accordingly, a scope of the invention is to provide an ohmic contact film capable of improving the ohmic contact between the doped semiconductor material layer and the conductive material layer. Compared to the prior art, a semiconductor light-emitting device with the ohmic contact film has an easier manufacturing process; it also increases the stability for production and consequently has lower cost for production.
    • SUMMARY OF THE INVENTION
  • A scope of the invention is to provide an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers. According to another preferred embodiment of the invention, an ohmic contact film is provided. The composition of the ohmic contact film is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x, y and z are molar numbers.
  • The advantage and spirit of the invention may be understood by the following recitations together with the appended drawings.
    • BRIEF DESCRIPTION OF THE APPENDED DRAWINGS
  • FIG. 1 illustrates a light-emitting diode structure having an n+ type reverse tunneling layer.
  • FIG. 2 is the schematic sectional view of the ohmic contact film according to a preferred embodiment of the invention.
  • FIG. 3 is the drawing of the I-V test conducted for semiconductor light-emitting devices with and without the ohmic contact film.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • Referring to FIG. 2, FIG. 2 is the schematic sectional view of the ohmic contact film 32 according to a preferred embodiment of the invention. The ohmic contact film 32 is formed between a doped semiconductor material layer 30 and a conductive material layer 34 of a semiconductor device. In practical application, the semiconductor device can be a semiconductor light-emitting device. The dopant type of the doped semiconductor material layer 30 can be N-type or P-type. The conductive material layer 34 can be Ni/Au, ITO, CTO, TiWN, In2O3, SnO2, CdO, ZnO, CuGaO2, or SrCu2O2.
  • The composition of the ohmic contact film 32 is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers. In practical application, the II group chemical element in the ohmic contact film 32 can be Zn, Be, Mg, Ca, Sr, Ba, or Ra. The V group chemical element in the ohmic contact film 32 can be N, P, As, Sb, or Bi.
  • In this embodiment, the ohmic contact film 32 is formed at a temperature ranging from 400° C. to 1100° C. The thickness of the ohmic contact film 32 is in a range of from 0.5 Angstroms to 500 Angstroms.
  • Refer to Table 1. Table 1 shows the results of a contact resistance test of a combination structure with and without the ohmic contact film 32. The combination structure includes a doped semiconductor material layer 30 of P-type GaN and a conductive material layer 34 of ITO. The ohmic contact film 32, formed between the P-type GaN and the ITO, has the composition of MgN, where Mg is selected from the II group chemical element, and N is selected from the V group chemical element. As shown in Table 1, the combination structure with MgN as the ohmic contact film 32 has a contact resistance lower than that without MgN by about an order. Therefore, the ohmic contact film 32 of MgN indeed improves the ohmic contact between the P-type GaN and the ITO.
  • TABLE 1
    combination structure of P-type GaN and ITO
    contact resistance
    with MgN ohmic contact film 1.56 × 10−3 ohm-cm2
    without MgN ohmic contact film  2.5 × 10−2 ohm-cm2
  • The calculation result in “Ferromagnetism in tetrahedrally coordinated compounds of I/II-V elements: Ab initiocalculations” of PHYSICAL REVIEW B 73 (2006) reveals that possible combinations of the II group chemical element and the V group chemical element have similar magnetic and electronic properties. It is found that all II-V compounds have a tendency toward a ferromagnetic ground state. On aspect of technology, it is believed that the ohmic contact film 32 according to the invention can be composed of other possible II-V compounds not mentioned in the specification of the invention.
  • Refer to FIG. 3. FIG. 3 is the drawing of an I-V test conducted for semiconductor light-emitting devices with and without the ohmic contact film 32. The ohmic contact film 32, included in the semiconductor light-emitting device, is prepared by the reaction between ammonia and Mg, and the composition of the ohmic contact film 32 is Mg3N2. As shown in FIG. 3, the semiconductor light-emitting device with Mg3N2 as the ohmic contact film 32 has a lower resistance value than that without Mg3N2.
  • According to another preferred embodiment of the invention, the composition of the ohmic contact film 32 in FIG. 2 is represented by the general formula MxQzNy, where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x, y and z are molar numbers.
  • In practical application, the II group chemical element in the ohmic contact film 32 can be Zn, Be, Mg, Ca, Sr, Ba, or Ra. The IV group chemical element in the ohmic contact film 32 can be C, Si, Ge, Si, or Pb. The V group chemical element in the ohmic contact film 32 can be N, P, As, Sb, or Bi.
  • The experimental result, according to “Ab initio band structure calculations of Mg3N2 and MgSiN2” of Condens. Matter 11, J. Phys (1999), proves that the energy gap of Mg3N2 is about 2.8 eV, while that of MgSiN2 is about 4.8 eV. Because the energy gap width of Mg3N2 and MgSiN2 is similar to that of InGaN, it is helpful to decrease the resistance value between the P-type GaN semiconductor material layer and the conductive material layer. Therefore, in the embodiment, the composition of the ohmic contact film 32 can be MgSiN2.
  • The ohmic contact film according to the invention is capable of improving the ohmic contact between the doped semiconductor material layer and the conductive material layer. Compared to the prior art, the semiconductor light-emitting device with the ohmic contact film has an easier manufacturing process; it also increases the stability for production and consequently has lower cost for production. Moreover, from the technical viewpoint, the ohmic contact film provided by the invention is certainly applicable to other type of semiconductor devices not described in the specification.
  • With the example and explanations above, the features and spirits of the invention will be hopefully well described. Those skilled in the art will readily observe that numerous modifications and alterations of the device may be made while retaining the teaching of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (6)

1. An ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device, the composition of said ohmic contact film being represented by the general formula:
MxQzNy, and
wherein M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
2. The ohmic contact film of claim 1, wherein the II group chemical element in said ohmic contact film is one selected from the group consisting of Zn, Be, Mg, Ca, Sr, Ba, and Ra, the IV group chemical element is one selected from the group consisting of C, Si, Ge, Si, and Pb, and the V group chemical element in said ohmic contact film is one selected from the group consisting of N, P, As, Sb, and Bi.
3. The ohmic contact layer of claim 1, wherein said ohmic contact film is formed at a temperature ranging from 400° C. to 1100° C.
4. The ohmic contact film of claim 1, wherein the thickness of said ohmic contact film is in a range of from 0.5 Angstroms to 500 Angstroms.
5. The ohmic contact film of claim 1, wherein the dopant type of the doped semiconductor material layer is N-type or P-type.
6. The ohmic contact film of claim 1, wherein the conductive material layer is formed of a material selected from the group consisting of Ni/Au, ITO, CTO, TiWN, In2O3, SnO2, CdO, ZnO, CuGaO2, and SrCu2O2.
US12/426,061 2006-07-28 2009-04-17 Ohmic contact film in semiconductor device Abandoned US20090200667A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/426,061 US20090200667A1 (en) 2006-07-28 2009-04-17 Ohmic contact film in semiconductor device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW095127869 2006-07-28
TW095127869A TWI306316B (en) 2006-07-28 2006-07-28 Semiconductor light emitting device and method of fabricating the same
US11/797,851 US20080023835A1 (en) 2006-07-28 2007-05-08 Ohmic contact film in semiconductor device
US12/426,061 US20090200667A1 (en) 2006-07-28 2009-04-17 Ohmic contact film in semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/797,851 Division US20080023835A1 (en) 2006-07-28 2007-05-08 Ohmic contact film in semiconductor device

Publications (1)

Publication Number Publication Date
US20090200667A1 true US20090200667A1 (en) 2009-08-13

Family

ID=38859552

Family Applications (4)

Application Number Title Priority Date Filing Date
US11/797,851 Abandoned US20080023835A1 (en) 2006-07-28 2007-05-08 Ohmic contact film in semiconductor device
US11/798,873 Expired - Fee Related US7659557B2 (en) 2006-07-28 2007-05-17 Semiconductor light-emitting device and method of fabricating the same
US12/246,339 Abandoned US20090029497A1 (en) 2006-07-28 2008-10-06 Semiconductor light-emitting device and method of fabricating the same
US12/426,061 Abandoned US20090200667A1 (en) 2006-07-28 2009-04-17 Ohmic contact film in semiconductor device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
US11/797,851 Abandoned US20080023835A1 (en) 2006-07-28 2007-05-08 Ohmic contact film in semiconductor device
US11/798,873 Expired - Fee Related US7659557B2 (en) 2006-07-28 2007-05-17 Semiconductor light-emitting device and method of fabricating the same
US12/246,339 Abandoned US20090029497A1 (en) 2006-07-28 2008-10-06 Semiconductor light-emitting device and method of fabricating the same

Country Status (5)

Country Link
US (4) US20080023835A1 (en)
JP (1) JP2008034803A (en)
KR (1) KR100903821B1 (en)
DE (1) DE102007022921A1 (en)
TW (1) TWI306316B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331233B2 (en) 2011-12-20 2016-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI306316B (en) * 2006-07-28 2009-02-11 Huga Optotech Inc Semiconductor light emitting device and method of fabricating the same
TWI398962B (en) * 2008-03-27 2013-06-11 Epistar Corp Gan semiconductor device
KR101020958B1 (en) * 2008-11-17 2011-03-09 엘지이노텍 주식회사 Method for manufacturing a gallium oxide substrate, light emitting device and method for fabricating the same
TWI380481B (en) * 2009-01-13 2012-12-21 Huga Optotech Inc Light-emitting diode with high light-emitting efficiency
CN102356477A (en) 2009-04-09 2012-02-15 松下电器产业株式会社 Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device
US8129574B2 (en) * 2009-08-31 2012-03-06 Honeywell International Inc. Hydrogenation process for fluorocarbons
CA2811401C (en) 2009-10-28 2017-10-03 Magnetation, Inc. Magnetic separator
CN102648535A (en) * 2009-12-09 2012-08-22 松下电器产业株式会社 Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting device
WO2012145658A1 (en) 2011-04-20 2012-10-26 Magnetation, Inc. Iron ore separation device
US9401397B1 (en) 2015-05-11 2016-07-26 International Business Machines Corporation Reduction of defect induced leakage in III-V semiconductor devices
US11119962B2 (en) * 2017-04-25 2021-09-14 Realtek Semiconductor Corp. Apparatus and method for multiplexing data transport by switching different data protocols through a common bond pad

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738771A (en) * 1994-05-30 1998-04-14 Canon Kabushiki Kaisha Thin film forming apparatus
US6492966B1 (en) * 1982-09-17 2002-12-10 Alton O. Christensen Integrally fabricated gated pixel elements and control circuitry for flat-panel displays
US20060181197A1 (en) * 2004-07-01 2006-08-17 Kumio Nago Electroluminescent device and display
US7659557B2 (en) * 2006-07-28 2010-02-09 Huga Optotech Inc. Semiconductor light-emitting device and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6181723B1 (en) * 1997-05-07 2001-01-30 Sharp Kabushiki Kaisha Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same
US20040079947A1 (en) * 2002-10-26 2004-04-29 Wen-How Lan Light-emitting diode with low resistance layer
KR100571818B1 (en) * 2003-10-08 2006-04-17 삼성전자주식회사 light emitting device and method of manufacturing the same
KR100571819B1 (en) * 2003-10-16 2006-04-17 삼성전자주식회사 light emitting device and method of manufacturing the same using p-type conductive transparent oxide thin film electrode
JP2006032665A (en) 2004-07-16 2006-02-02 Hitachi Cable Ltd Light emitting diode
KR100568308B1 (en) * 2004-08-10 2006-04-05 삼성전기주식회사 Gallium nitride based semiconductor light emitting diode and method of producing the same
TWI241036B (en) * 2004-08-18 2005-10-01 Formosa Epitaxy Inc GaN LED structure with enhanced light emitting luminance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492966B1 (en) * 1982-09-17 2002-12-10 Alton O. Christensen Integrally fabricated gated pixel elements and control circuitry for flat-panel displays
US5738771A (en) * 1994-05-30 1998-04-14 Canon Kabushiki Kaisha Thin film forming apparatus
US20060181197A1 (en) * 2004-07-01 2006-08-17 Kumio Nago Electroluminescent device and display
US7659557B2 (en) * 2006-07-28 2010-02-09 Huga Optotech Inc. Semiconductor light-emitting device and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9331233B2 (en) 2011-12-20 2016-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structure

Also Published As

Publication number Publication date
JP2008034803A (en) 2008-02-14
TWI306316B (en) 2009-02-11
US20080023709A1 (en) 2008-01-31
US7659557B2 (en) 2010-02-09
DE102007022921A1 (en) 2008-01-31
US20090029497A1 (en) 2009-01-29
KR20080011061A (en) 2008-01-31
TW200807746A (en) 2008-02-01
KR100903821B1 (en) 2009-06-25
US20080023835A1 (en) 2008-01-31

Similar Documents

Publication Publication Date Title
US20090200667A1 (en) Ohmic contact film in semiconductor device
KR100730082B1 (en) Nitride semiconductor light emitting device
US6847052B2 (en) Light-emitting diode device geometry
KR101438811B1 (en) Semiconductor light emitting device and fabrication method thereof
EP3240050B1 (en) Light emitting diode and light emitting diode array comprising same
KR101766719B1 (en) Light emitting diode and Light emitting device comprising the same
US20020179914A1 (en) Group III-V element-based LED having flip-chip structure and ESD protection capacity
US9000460B2 (en) Semiconductor light emitting device
CN102983129A (en) Light emitting device
US20090179221A1 (en) Semiconductor light emitting device
US20070096143A1 (en) Nitride semiconductor light emitting device and method for manufacturing the same
CN107810563B (en) Ultraviolet light emitting diode, light emitting diode package and lighting device
CN104112757A (en) Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system
US9812614B2 (en) Light-emitting device
KR101916020B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
US10535795B2 (en) Ultraviolet light emitting element and lighting system having a quantum barrier structure for improved light emission efficiency
CN102544290A (en) Nitirde semiconductor light emitting diode
KR20130018072A (en) Light emitting device, method for fabricating the same, and light emitting device package
KR20120051969A (en) Light emitting device
US11244932B2 (en) Display apparatus
CN111987196A (en) Semiconductor device with a plurality of semiconductor chips
KR100946102B1 (en) Nitride Semiconductor Light Emitting Device
CN112242441A (en) High electron mobility transistor
KR100721160B1 (en) Nitride semiconductor device
KR102416413B1 (en) Micro light emitting device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: EPISTAR CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HUGA OPTOTECH INC.;REEL/FRAME:040350/0699

Effective date: 20160923