US20100056031A1 - Polishing Pad - Google Patents

Polishing Pad Download PDF

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Publication number
US20100056031A1
US20100056031A1 US12/326,938 US32693808A US2010056031A1 US 20100056031 A1 US20100056031 A1 US 20100056031A1 US 32693808 A US32693808 A US 32693808A US 2010056031 A1 US2010056031 A1 US 2010056031A1
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US
United States
Prior art keywords
polishing pad
polishing
groove
groove bottom
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/326,938
Inventor
Allen Chiu
Shao-Yu Chen
Yu-Lung Jeng
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BESTAC ADVANCED MATERIAL Co Ltd
Original Assignee
BESTAC ADVANCED MATERIAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BESTAC ADVANCED MATERIAL Co Ltd filed Critical BESTAC ADVANCED MATERIAL Co Ltd
Assigned to BESTAC ADVANCED MATERIAL CO., LTD. reassignment BESTAC ADVANCED MATERIAL CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, Shao-yu, CHIU, ALLEN, JENG, YU-LUNG
Publication of US20100056031A1 publication Critical patent/US20100056031A1/en
Abandoned legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Abstract

The present invention provides a polishing pad, and is more particularly related to a polishing pad, the width of groove bottom of polishing surface of which is 0 mm. The polishing pad includes a polishing surface on which comprises a plurality of grooves, wherein each groove includes a groove opening and a groove bottom, the characteristic of which being that the width of groove bottom of polishing surface is 0 mm. Therefore, when the polishing step is performed, it is not easy for polishing particles suspended in the slurry to deposit on the groove bottom and the deposits can be prevented from scratching the concerned work piece to avoid damage of work piece.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention is related to a polishing pad, and more particularly, to a polishing pad, the width of groove bottom of polishing surface of which is 0 mm.
  • 2. Description of the Prior Art
  • Electrical chips are formed by deposition of various laminate materials, for example, a silicon wafer is one of the substrates of laminate materials. Whenever a new laminate is deposited, a polishing or scratching step is often needed for removing excessive laminate materials to planarize the chip or to achieve other purposes. Such process of polishing is generally called chemical mechanical polishing (CMP). Since chips are formed by deposition of different thin film laminates, the CMP step needs to be performed for multiple times for evenly removing excessive laminate materials from the surface of a chip to achieve the purpose of planarization.
  • And usually when the CMP step is performed, chemical slurry is led in between the chip and the polishing pad for generating chemical reaction between the deposited thin film laminates and the chemical slurry or for generating mechanical reaction between the deposited thin film laminates and the particles in the chemical slurry to remove part of excessive thin film laminates on the surface of chip. However, the slurry existing between the polishing pad and the chip makes it easy for the polishing pad and the chip to become fully attached to each other, which thus causes disappearance of the force of friction between the polishing pad and the chip. Therefore, in order to achieve better polishing effect with the CMP step, the most common practice at present is to install groove on the surface of the polishing pad not only for increasing force of friction between the polishing pad and the chip but also for ensuring that the slurry is evenly distributed on the surface of the polishing pad and for letting polishing particles suspended in the slurry and the scraps to flow out through the groove.
  • However, in the common practice, when groove is installed on the surface of the polishing pad, there will be near-90-degree right-angle indentations on the bottom of the groove, as shown in FIG. 1. Therefore when the CMP step is performed, it is easy for the polishing particles in the slurry or the scraps produced by the polishing process to deposit in the corners of indentations without flowing out. The residual polishing particles or deposits will form larger particles and lead to scratching or damaging of surface of the polished object.
  • SUMMARY OF THE INVENTION
  • In order to solve the problems as described above, one objective of the present invention is to provide a polishing pad, the width of groove bottom of polishing surface of which is 0 mm to prevent the concerned work piece from being scratched and thus damaged by larger particles formed by polishing particles suspended in the slurry or scraps produced after polishing depositing on the bottom of groove.
  • Another objective of the present invention is to provide a polishing pad, the design of bottom of groove of polishing surface of which facilitates the flow of the slurry.
  • Still another objective of the present invention is to provide a polishing pad, the groove of which ensures that the slurry is evenly distributed on the polishing surface.
  • According to the above objectives, the present invention provides a polishing pad, the width of bottom of groove of polishing surface of which is 0 mm. The polishing pad includes a polishing surface on which comprises a plurality of grooves, wherein each groove includes a groove opening and a groove bottom, the characteristic of which being that the width of groove bottom of polishing surface is 0 mm. Therefore, when the polishing step is performed, it is not easy for polishing particles suspended in the slurry to deposit on the groove bottom and the deposits can be prevented from scratching the concerned work piece to avoid damage of work piece.
  • Therefore, with the design of width of groove bottom being 0 mm of the polishing pad provided by the present invention, not only can the deposition of polishing particles or scraps produced after polishing on the bottom of groove that may lead to scratching and damaging of work piece be prevented, but the flow of slurry can also be facilitated since the design of groove bottom prevents too much slurry from accumulating in the groove and thus achieves better polishing effect.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The invention as well as a preferred mode of use, further objectives and advantages thereof will best be understood by reference to the following detailed description of illustrative embodiments when read in conjunction with the accompanying drawings, wherein:
  • FIG. 1 is a sectional view of a polishing pad (prior art);
  • FIG. 2 is a front view of a polishing pad;
  • FIG. 3A is a sectional view of groove of a polishing pad;
  • FIG. 3B is a sectional view of groove of a polishing pad;
  • FIG. 3C is a sectional view of groove of a polishing pad; and
  • FIG. 3D is a sectional view of groove of a polishing pad.
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The present invention discloses a polishing pad, and more particularly, a polishing pad with the width of groove bottom of polishing surface of which being 0 mm. In the present invention, some details for manufacturing or processing polishing pad are achieved by applying conventional art, and therefore are not completely depicted in below description. And the drawings referred to in the following are not made according to the actual related sizes, the function of which is only to express and illustrate characteristics of the present invention.
  • FIG. 2 is a view of a preferred embodiment of polishing pad of the present invention. The polishing pad 20 includes a polishing surface 21 and a plurality of grooves 22 are disposed on the polishing surface 21, wherein each groove 22 includes a groove opening 221 and a groove bottom 222, as shown in FIG. 3A taken along section line a-a′ in FIG. 2, the characteristic of which being that the width of groove bottom 222 of polishing surface 21 is 0 mm.
  • FIG. 3A is a view of a preferred embodiment of groove of polishing pad according to the present invention. Between the groove opening 221 and the groove bottom 222 of the polishing pad 20 comprises at least one section 223, and the width of groove opening 221 and the width of groove bottom 222 are different, wherein between each section 223 comprises a bend to form an included angle. Thus part of section 223 can be a plane surface perpendicular to the groove bottom 222, and part of section 223 can be an inclined plane that is not perpendicular to the groove bottom 222.
  • FIG. 3B is a view of another preferred embodiment of groove of polishing pad according to the present invention. Between the groove opening 221 and the groove bottom 222 of the polishing pad 20 comprises at least one section 223, and the width of groove opening 221 and the width of groove bottom 222 are different, wherein the section 223 is V-shaped and is thus an inclined plane that is not perpendicular to the groove bottom 222.
  • FIG. 3C is a view of still another preferred embodiment of groove of polishing pad according to the present invention. Between the groove opening 221 and the groove bottom 222 of the polishing pad 20 comprises at least one section 223, and the width of groove opening and the width of groove bottom are different, wherein between the polishing surface 21 and the section 223 comprises a bent to form an included angle A1, degree of angle A1 being between 90 to 120 degrees.
  • FIG. 3D is a view of yet another preferred embodiment of groove of polishing pad according to the present invention. Between the groove opening 221 and the groove bottom 222 of the polishing pad 20 comprises at least one section 223, and the width of groove opening and the width of groove bottom are different, wherein the section 223 is U-shaped and the curved groove bottom thus facilitates the flow of slurry.
  • The present invention further provides still another preferred embodiment of groove of a polishing pad. Between the groove opening and the groove bottom of the polishing pad comprises at least one section, and the width of groove opening 221 and the width of groove bottom 222 are different, wherein the section is an irregular curved surface.
  • The aforementioned polishing pad can further include a connecting surface for being connected to a polishing surface of another polishing pad to form a two-layer polishing pad.
  • With the design of width of groove bottom of the polishing pad provided by the present invention being 0 mm, not only can the polishing particles or scraps produced after polishing be prevented from depositing on the groove bottom and thus leading to scrap and damage of work piece by the deposits, but the design of groove bottom also facilitates the flow of slurry so that excessive amount of slurry will not accumulate in the groove and better polishing effect can be achieved.
  • What are described above are only preferred embodiments of the present invention and are not for limiting the scope of the present invention; and the above description can be understood and put into practice by those who are skilled in the art. Therefore any equivalent modifications and arrangements made without departing from the spirit disclosed by the present invention should be encompassed by the appended claims accorded with the broadest interpretation.

Claims (12)

1. A polishing pad, said polishing pad including a polishing surface, said polishing surface comprising a plurality of grooves on it, wherein said each groove includes a groove opening and a groove bottom, the characteristic of said polishing pad being in that width of said groove bottom of said polishing surface is 0 mm.
2. The polishing pad according to claim 1, wherein between said groove opening and said groove bottom of said polishing pad comprises at least one section.
3. The polishing pad according to claim 2, wherein said section is V-shaped.
4. The polishing pad according to claim 2, wherein said section is U-shaped.
5. The polishing pad according to claim 2, wherein between each said section comprises a bend to form an included angle.
6. The polishing pad according to claim 2, wherein between said polishing surface and said section comprises a bend to form an included angle.
7. The polishing pad according to claim 6, wherein degree of said included angle is about 90˜120 degrees.
8. The polishing pad according to claim 2, wherein said section is a plane surface perpendicular to said groove bottom.
9. The polishing pad according to claim 2, wherein said section is an inclined plane not perpendicular to said groove bottom.
10. The polishing pad according to claim 2, wherein said section is an irregular curved surface.
11. The polishing pad according to claim 1, wherein width of said groove opening and width of said groove bottom of said polishing pad are different.
12. The polishing pad according to claim 1, wherein said polishing pad further includes a connecting surface for being connected to polishing surface of another polishing pad.
US12/326,938 2008-08-29 2008-12-03 Polishing Pad Abandoned US20100056031A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW097215520 2008-08-29
TW097215520U TWM352127U (en) 2008-08-29 2008-08-29 Polishing pad

Publications (1)

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US20100056031A1 true US20100056031A1 (en) 2010-03-04

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US12/326,938 Abandoned US20100056031A1 (en) 2008-08-29 2008-12-03 Polishing Pad

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US (1) US20100056031A1 (en)
TW (1) TWM352127U (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012077427A1 (en) * 2010-12-07 2012-06-14 旭硝子株式会社 Grinder
US20140030958A1 (en) * 2012-07-30 2014-01-30 GLOBAL FOUNDRIES Singapore Pte. Ltd. Single grooved polishing pad
US20140141704A1 (en) * 2011-07-15 2014-05-22 Toray Industries, Inc. Polishing pad
US20140154962A1 (en) * 2011-07-15 2014-06-05 Toray Industries, Inc. Polishing pad
US20140378035A1 (en) * 2011-09-15 2014-12-25 Toray Industries, Inc. Polishing pad
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
JP2016034689A (en) * 2014-08-04 2016-03-17 日本電気硝子株式会社 Polishing pad
US9315530B2 (en) 2010-09-01 2016-04-19 Novartis Ag Adsorption of immunopotentiators to insoluble metal salts
US9375471B2 (en) 2012-03-08 2016-06-28 Glaxosmithkline Biologicals Sa Adjuvanted formulations of booster vaccines
US20180043499A1 (en) * 2016-08-11 2018-02-15 Chien-Hung SUNG Chemical mechanical polishing pad and method for manufacturing the same
US9950062B2 (en) 2009-09-02 2018-04-24 Glaxosmithkline Biologicals Sa Compounds and compositions as TLR activity modulators
JP2019098480A (en) * 2017-12-05 2019-06-24 日本電気硝子株式会社 Polishing pad
US10603369B2 (en) 2011-03-02 2020-03-31 Glaxosmithkline Biologicals Sa Combination vaccines with lower doses of antigen and/or adjuvant
JP2021049624A (en) * 2019-09-26 2021-04-01 日本電気硝子株式会社 Polishing pad and polishing method

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US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5287663A (en) * 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5302233A (en) * 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
US5329734A (en) * 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
US5441598A (en) * 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5690540A (en) * 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5882251A (en) * 1997-08-19 1999-03-16 Lsi Logic Corporation Chemical mechanical polishing pad slurry distribution grooves
US6001001A (en) * 1997-06-10 1999-12-14 Texas Instruments Incorporated Apparatus and method for chemical mechanical polishing of a wafer
US6089966A (en) * 1997-11-25 2000-07-18 Arai; Hatsuyuki Surface polishing pad
US6120366A (en) * 1998-12-29 2000-09-19 United Microelectronics Corp. Chemical-mechanical polishing pad
US6203407B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US20040014413A1 (en) * 2002-06-03 2004-01-22 Jsr Corporation Polishing pad and multi-layer polishing pad
US20040053570A1 (en) * 2002-09-13 2004-03-18 Markus Naujok Novel finishing pad design for multidirectional use
US6783436B1 (en) * 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US7097550B2 (en) * 2004-05-24 2006-08-29 Jsr Corporation Chemical mechanical polishing pad
US20070072526A1 (en) * 2005-09-28 2007-03-29 Diamex International Corporation. Polishing system
US20070180778A1 (en) * 2004-03-23 2007-08-09 Cabot Microelectronics Corporation CMP Porous Pad with Component-Filled Pores
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
US7357703B2 (en) * 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method

Patent Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5212910A (en) * 1991-07-09 1993-05-25 Intel Corporation Composite polishing pad for semiconductor process
US5287663A (en) * 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US6439989B1 (en) * 1992-08-19 2002-08-27 Rodel Holdings Inc. Polymeric polishing pad having continuously regenerated work surface
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5302233A (en) * 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
US5329734A (en) * 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
US5441598A (en) * 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5690540A (en) * 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6001001A (en) * 1997-06-10 1999-12-14 Texas Instruments Incorporated Apparatus and method for chemical mechanical polishing of a wafer
US5882251A (en) * 1997-08-19 1999-03-16 Lsi Logic Corporation Chemical mechanical polishing pad slurry distribution grooves
US6089966A (en) * 1997-11-25 2000-07-18 Arai; Hatsuyuki Surface polishing pad
US6203407B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6120366A (en) * 1998-12-29 2000-09-19 United Microelectronics Corp. Chemical-mechanical polishing pad
US20040014413A1 (en) * 2002-06-03 2004-01-22 Jsr Corporation Polishing pad and multi-layer polishing pad
US20040053570A1 (en) * 2002-09-13 2004-03-18 Markus Naujok Novel finishing pad design for multidirectional use
US6783436B1 (en) * 2003-04-29 2004-08-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with optimized grooves and method of forming same
US20070180778A1 (en) * 2004-03-23 2007-08-09 Cabot Microelectronics Corporation CMP Porous Pad with Component-Filled Pores
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
US7097550B2 (en) * 2004-05-24 2006-08-29 Jsr Corporation Chemical mechanical polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20080139684A1 (en) * 2004-10-27 2008-06-12 Ppg Industries Ohio, Inc. Process for preparing a polyurethane urea polishing pad
US20070072526A1 (en) * 2005-09-28 2007-03-29 Diamex International Corporation. Polishing system
US7357703B2 (en) * 2005-12-28 2008-04-15 Jsr Corporation Chemical mechanical polishing pad and chemical mechanical polishing method

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
US9950062B2 (en) 2009-09-02 2018-04-24 Glaxosmithkline Biologicals Sa Compounds and compositions as TLR activity modulators
US10098949B2 (en) 2010-09-01 2018-10-16 Glaxosmithkline Biologicals S.A. Adsorption of immunopotentiators to insoluble metal salts
US9315530B2 (en) 2010-09-01 2016-04-19 Novartis Ag Adsorption of immunopotentiators to insoluble metal salts
WO2012077427A1 (en) * 2010-12-07 2012-06-14 旭硝子株式会社 Grinder
US10603369B2 (en) 2011-03-02 2020-03-31 Glaxosmithkline Biologicals Sa Combination vaccines with lower doses of antigen and/or adjuvant
US20140154962A1 (en) * 2011-07-15 2014-06-05 Toray Industries, Inc. Polishing pad
US9114501B2 (en) * 2011-07-15 2015-08-25 Toray Industries, Inc. Polishing pad
US20140141704A1 (en) * 2011-07-15 2014-05-22 Toray Industries, Inc. Polishing pad
US20140378035A1 (en) * 2011-09-15 2014-12-25 Toray Industries, Inc. Polishing pad
US9375471B2 (en) 2012-03-08 2016-06-28 Glaxosmithkline Biologicals Sa Adjuvanted formulations of booster vaccines
US10842868B2 (en) 2012-03-08 2020-11-24 Glaxosmithkline Biologicals Sa Adjuvanted formulations of booster vaccines
US9931399B2 (en) 2012-03-08 2018-04-03 Glaxosmithkline Biologicals Sa Adjuvanted formulations of booster vaccines
US9421669B2 (en) * 2012-07-30 2016-08-23 Globalfoundries Singapore Pte. Ltd. Single grooved polishing pad
US20140030958A1 (en) * 2012-07-30 2014-01-30 GLOBAL FOUNDRIES Singapore Pte. Ltd. Single grooved polishing pad
JP2016034689A (en) * 2014-08-04 2016-03-17 日本電気硝子株式会社 Polishing pad
US20180043499A1 (en) * 2016-08-11 2018-02-15 Chien-Hung SUNG Chemical mechanical polishing pad and method for manufacturing the same
US10239183B2 (en) * 2016-08-11 2019-03-26 Slh Technology Co., Ltd. Chemical mechanical polishing pad and method for manufacturing the same
JP2019098480A (en) * 2017-12-05 2019-06-24 日本電気硝子株式会社 Polishing pad
JP7087365B2 (en) 2017-12-05 2022-06-21 日本電気硝子株式会社 Polishing pad
JP2021049624A (en) * 2019-09-26 2021-04-01 日本電気硝子株式会社 Polishing pad and polishing method
JP7351170B2 (en) 2019-09-26 2023-09-27 日本電気硝子株式会社 Polishing pad and polishing method

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Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIU, ALLEN;CHEN, SHAO-YU;JENG, YU-LUNG;SIGNING DATES FROM 20081121 TO 20081125;REEL/FRAME:021917/0697

STCB Information on status: application discontinuation

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