US20100162821A1 - Mems device and method for fabricating the same - Google Patents
Mems device and method for fabricating the same Download PDFInfo
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- US20100162821A1 US20100162821A1 US12/621,048 US62104809A US2010162821A1 US 20100162821 A1 US20100162821 A1 US 20100162821A1 US 62104809 A US62104809 A US 62104809A US 2010162821 A1 US2010162821 A1 US 2010162821A1
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- hole
- holes
- grouping
- shape
- air gap
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
Definitions
- the present invention relates to devices, such as sensors, using MEMS (Micro Electro Mechanical Systems) techniques, and methods for fabricating the same.
- MEMS Micro Electro Mechanical Systems
- MEMS Microwave Activated Sensor Analysis
- MEMS devices include, as their major components, a substrate having a through hole, a diaphragm provided on the top surface of the substrate, a fixed film provided over the diaphragm with an air gap interposed therebetween and having a hole grouping composed of holes, and a supporting layer interposed between the diaphragm and the fixed film.
- FIG. 23 is a plan view illustrating the configuration of a fixed film in a conventional MEMS device.
- a hole grouping 201 G in which all holes 201 are arranged in a lattice pattern, is formed in a fixed film 200 .
- a square shape is formed in the lattice (see the dotted lines shown in FIG. 23 ).
- one known technique for forming an air gap and a supporting layer is to form these elements by using a hole grouping.
- a hole grouping there is a known technique in the art in which, for example, an etchant is supplied through the holes of a hole grouping to permeate part of a sacrificial layer interposed between a diaphragm and a fixed film, and the part of the sacrificial layer having the permeating etchant therein is removed, thereby forming an air gap in the sacrificial layer, and forming a supporting layer out of the remaining part of the sacrificial layer.
- the air gap is formed so that its shape in plan view is defined along the outermost holes of the hole grouping.
- the supporting layer is formed so that the inner side surfaces thereof form a shape along the outermost holes of the hole grouping.
- the air gap is formed so that its shape in plan view is defined along the outermost holes 201 of the hole grouping 201 G as set forth above. Therefore, as shown in FIG. 24 , the air gap 300 is formed so as to have nonuniform corner portions C 300 in its shape in plan view.
- the supporting layer is formed so that the inner side surfaces thereof form a shape having nonuniform corner portions.
- the present inventor who focused on the supporting layer formation method, found that the supporting layer is formed using the hole grouping, and thus is formed so that the inner side surfaces thereof have a shape defined along the outermost holes of the hole grouping.
- the present inventor also found that when the inner side surfaces of the supporting layer have a nonuniform shape, stress is concentrated, and thus cracks occur in the part of the fixed film that is in contact with the supporting layer.
- a MEMS device includes: a substrate having a through hole; a first film provided on a top surface of the substrate with a bottom surface of the first film exposed in the through hole; a second film provided over the first film with an air gap interposed therebetween, and having a hole grouping including holes each in communication with the air gap; and a supporting layer interposed between the first and second films and having the air gap formed therein.
- Outermost holes of the hole grouping are located at regular intervals along a shape of an opening of the through hole at an upper open end.
- the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions (in other words, the supporting layer is formed so that the inner side surfaces thereof have a uniform shape). This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer.
- the term “corresponding portions” means corner portions along the quadrilateral shapes, and when the openings of the holes have, e.g., a circular shape, curved portions along the circular shapes.
- the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thereby preventing the second film from sticking to the first film.
- inner side surfaces of the supporting layer preferably form a shape having uniform corresponding portions, which are uniformly located corresponding to the respective outermost holes of the hole grouping.
- the holes of the hole grouping are preferably arranged in a lattice pattern.
- the holes of the hole grouping are uniformly arranged in the second film.
- holes of the hole grouping other than the outermost holes are preferably arranged in a lattice pattern.
- the holes of the hole grouping other than the outermost holes are uniformly arranged in the second film.
- the shape of the opening of the through hole at the upper open end is preferably quadrilateral, hexagonal, octagonal, circular, or elliptical.
- a method for fabricating a MEMS device includes the steps of: (a) forming a first film on a top surface of a substrate; (b) forming a second film over the first film with a sacrificial layer interposed therebetween; (c) forming, in the second film, a hole grouping including holes each passing through the second film; (d) forming, in the substrate, a through hole exposing a bottom surface of the first film, after the step (c) is performed; and (e) removing, using the hole grouping, parts of the sacrificial layer corresponding to the respective holes of the hole grouping, thereby forming an air gap in the sacrificial layer and forming a supporting layer out of a remaining part of the sacrificial layer, after the step (d) is performed.
- the hole grouping is formed so that outermost holes thereof are located at regular intervals along a shape of an opening of the through hole at an upper open end; and in the step (e), the supporting layer is formed so that inner side surfaces thereof form a shape along the outermost holes of the hole grouping.
- the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end. Consequently, the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions. This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer.
- stress specifically, e.g., tensile stress or the like applied to the second film
- the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thus preventing the second film from sticking to the first film in the process step of forming the air gap and the supporting layer.
- an etchant or an etching gas is preferably supplied to the parts of the sacrificial layer through the holes of the hole grouping, thereby removing those parts.
- the hole grouping is preferably formed so that the holes thereof are arranged in a lattice pattern.
- the holes of the hole grouping are uniformly arranged in the second film, thus enabling an etchant or etching gas to uniformly permeate the parts of the sacrificial layer in the process step of forming the air gap and the supporting layer.
- the hole grouping is preferably formed so that holes thereof other than the outermost holes are arranged in a lattice pattern.
- the holes of the hole grouping other than the outermost holes are uniformly arranged in the second film, thus enabling an etchant or etching gas to uniformly permeate the parts of the sacrificial layer in the process step of forming the air gap and the supporting layer.
- the through hole is preferably formed so that the shape of the opening at the upper open end is quadrilateral, hexagonal, octagonal, circular, or elliptical.
- the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions. This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer.
- the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thus preventing the second film from sticking to the first film in the process step of forming the air gap and the supporting layer.
- FIGS. 1A-1C sequentially show process steps of a method for fabricating a MEMS device according to a first embodiment of the present invention, illustrating how major components thereof are formed.
- FIGS. 2A and 2B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIGS. 3A and 3B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIG. 4 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the first embodiment of the present invention.
- FIG. 5 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first embodiment of the present invention.
- FIG. 6A is a plan view illustrating the configuration of the air gap and the supporting layer in the MEMS device of the first embodiment of the present invention
- FIG. 6B is a plan view illustrating the configuration of the holes, the air gap, and the supporting layer in the MEMS device of the first embodiment of the present invention.
- FIG. 7 is a plan view illustrating the configuration of holes, an air gap, and a supporting layer in a MEMS device according to a comparative example.
- FIGS. 8A-8C sequentially show process steps of a method for fabricating a MEMS device according to a first modified example of the first embodiment of the present invention, illustrating how major components thereof are formed.
- FIGS. 9A and 9B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIGS. 10A and 10B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIG. 11 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the first modified example of the first embodiment of the present invention.
- FIG. 12 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first modified example of the first embodiment of the present invention.
- FIGS. 13A-13C sequentially show process steps of a method for fabricating a MEMS device according to a second modified example of the first embodiment of the present invention, illustrating how major components thereof are formed.
- FIGS. 14A and 14B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIGS. 15A and 15B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIG. 16 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the second modified example of the first embodiment of the present invention.
- FIGS. 17A-17C sequentially show process steps of a method for fabricating a MEMS device according to a second embodiment of the present invention, illustrating how major components thereof are formed.
- FIGS. 18A and 18B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed.
- FIGS. 19A and 19B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed.
- FIG. 20 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the second embodiment of the present invention.
- FIG. 21 illustrates the configuration of a MEMS device according to a modified example of the second embodiment of the present invention.
- FIG. 22 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the modified example of the second embodiment of the present invention.
- FIG. 23 is a plan view illustrating the configuration of a fixed film in a conventional MEMS device.
- FIG. 24 is a plan view illustrating the configuration of an air gap in the conventional MEMS device.
- the following describes a MEMS device according to a first embodiment of the present invention with reference to FIGS. 1A to 1C , 2 A and 2 B, 3 A and 3 B, 4 , 5 , 6 A and 6 B, and 7 .
- FIGS. 1A to 3B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed.
- the plan views shown in the upper sections are as seen from above the top surface of a substrate
- the cross-sectional views shown the middle sections are taken along the lines Ia-Ia to IIIb-IIIb respectively
- the plan views shown in the lower sections are as seen from the bottom surface of the substrate.
- the top surface of the substrate means the side of the substrate where a diaphragm is formed
- the bottom surface of the substrate means the side facing the side where the diaphragm is formed.
- a substrate 10 having a (110) crystal face, and having a rhombic shape in plan view there is provided a substrate 10 having a (110) crystal face, and having a rhombic shape in plan view.
- the substrate 10 may be made of silicon, for example.
- a diaphragm 11 having a rhombic shape in plan view, is formed on the top surface of the substrate 10 .
- the diaphragm 11 needs to function as a vibrating electrode.
- the diaphragm 11 a single-layer film of a conductive film or a multilayer film composed of a conductive film and an insulating film.
- the conductive film include a polysilicon film and a metal film, such as an aluminum film.
- the insulating film include a silicon oxide film and a silicon nitride film.
- a sacrificial layer 12 having a rhombic shape in plan view, is formed on the diaphragm 11 .
- the sacrificial layer 12 is partially removed in a later process step to form an air gap (see the reference numeral 16 in FIG. 3B ).
- the remaining part of the sacrificial layer 12 that has not been removed serves as a supporting layer (see the reference numeral 17 in FIG. 3B ) for supporting a fixed film (see the reference numeral 13 in FIG. 3B ).
- the thickness of the sacrificial layer 12 is set to a desired air gap height (in other words, a desired supporting layer height), e.g., 4 ⁇ m.
- an insulating film is preferably used as the sacrificial layer 12 .
- the insulating film may be a silicon oxide film, for example.
- the fixed film 13 having a rhombic shape in plan view, is formed on the sacrificial layer 12 .
- the fixed film 13 which needs to function as a fixed electrode, is formed with tensile stress applied thereto.
- a single-layer film of a conductive film or a multilayer film composed of a conductive film and an insulating film is preferably used.
- the conductive film include a polysilicon film and a metal film, such as an aluminum film.
- the insulating film include a silicon oxide film and a silicon nitride film. In this way, the fixed film 13 is formed over the diaphragm 11 with the sacrificial layer 12 interposed therebetween.
- holes 14 are formed through the fixed film 13 , each exposing the top surface of the sacrificial layer 12 , thereby forming a hole grouping 14 G, composed of the holes 14 , in the fixed film 13 .
- the hole grouping 14 G is formed in such a manner that the outermost holes 14 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the open end that is located at the same level as the substrate top surface (hereinafter referred to as the “upper open end”; see the reference numeral 15 u in FIG. 3A ).
- the hole grouping 14 G is also formed so that the holes 14 thereof are arranged in a lattice pattern.
- the hole grouping means the set of all holes formed in the fixed film.
- a thin film (not shown) having an opening pattern is formed on the bottom surface of the substrate 10 .
- the substrate 10 is wet etched using an etchant, which is an alkaline chemical solution, such as, KOH (potassium hydroxide) or TMAH (tetramethyl ammonium hydroxide, (CH 3 ) 4 NOH), for example.
- an alkaline chemical solution such as, KOH (potassium hydroxide) or TMAH (tetramethyl ammonium hydroxide, (CH 3 ) 4 NOH)
- the through hole 15 is formed so that its opening has a rhombic shape at the open end 15 l located at the same level as the substrate bottom surface (hereinafter referred to as the “lower open end”), and has a hexagonal shape at the upper open end 15 u . Then, the thin film is removed.
- an etchant for example, an acid chemical solution, such as HF (hydrofluoric acid)
- HF hydrofluoric acid
- the etchant spreads outwardly from each hole 14 of the hole grouping 14 G to permeate parts of the sacrificial layer 12 . Consequently, the parts of the sacrificial layer 12 in which the etchant has permeated are removed, thereby forming the air gap 16 in the sacrificial layer 12 , and forming the supporting layer 17 out of the remaining part of the sacrificial layer 12 .
- the parts of the sacrificial layer 12 corresponding to the respective holes 14 of the hole grouping 14 G are removed using the hole grouping 14 G, thereby forming the air gap 16 and the supporting layer 17 .
- the air gap 16 is formed so that its shape in plan view is defined along the outermost holes 14 of the hole grouping 14 G
- the supporting layer 17 is formed so that its inner side surfaces form a shape along the outermost holes 14 of the hole grouping 14 G.
- the parts of the sacrificial layer corresponding to the respective holes of the hole grouping include (1) parts of the sacrificial layer located directly under the respective holes of the hole grouping, and (2) parts of the sacrificial layer located under the outer edges of the respective holes.
- the MEMS device according to this embodiment is fabricated.
- the MEMS device includes: the substrate 10 having the through hole 15 ; the diaphragm (first film) 11 provided on the top surface of the substrate 10 with the bottom surface of the diaphragm 11 partially exposed in the through hole 15 ; the fixed film (second film) 13 provided over the diaphragm 11 with the air gap 16 interposed therebetween and having the hole grouping 14 G composed of the holes 14 each in communication with the air gap 16 ; and the supporting layer 17 interposed between the diaphragm 11 and the fixed film 13 and having the air gap 16 formed therein.
- FIG. 4 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap 16 , and the supporting layer 17 in the MEMS device according to the first embodiment of the present invention.
- the number of holes 14 of the hole grouping 14 G shown in FIG. 4 differs from that in FIG. 3B , the number of holes 14 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- the through hole with the opening having a hexagonal shape at the upper open end 15 u , the supporting layer 17 with the air gap 16 formed therein, and the hole grouping 14 G are located in that order in the direction from the bottom surface to the top surface of the substrate.
- the air gap 16 is formed using the hole grouping 14 G, specifically, by removing the parts of the sacrificial layer 12 corresponding to the respective holes 14 of the hole grouping 14 G. Consequently, as shown in FIG. 4 , the detailed shape of the air gap 16 in plan view is defined along the outermost holes 14 of the hole grouping 14 G, and has uniform curved portions corresponding to the respective outermost holes 14 . On the other hand, the general shape of the air gap 16 in plan view is hexagonal as shown in FIG. 4 (see the reference numeral 16 o ).
- the shape formed by the inner side surfaces of the supporting layer 17 is defined along the outermost holes 14 of the hole grouping 14 G, and has uniform curved portions (corresponding portions) corresponding to the respective outermost holes 14 , because the supporting layer 17 is formed of the remaining part of the sacrificial layer 12 that has not been removed.
- the general shape of the air gap 16 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upper open end 15 u as shown in FIG. 4 .
- the outermost holes 14 of the hole grouping 14 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 15 u (in other words, along the general shape of the air gap 16 in plan view) as shown in FIG. 4 . Also, as shown in FIG. 4 , the holes 14 of the hole grouping 14 G are arranged in a lattice pattern.
- the through hole 15 is formed so as to correspond to the air gap 16 with the diaphragm 11 interposed therebetween.
- the area of the opening of the through hole at the upper open end 15 u is smaller than that of the opening of the air gap 16 as shown in FIG. 4 .
- the top surface of the part of the diaphragm 11 exposed in the through hole 15 is entirely exposed in the air gap 16 .
- FIG. 5 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first embodiment of the present invention.
- FIG. 5 shows the same configuration as FIG. 4 .
- the illustration of the holes of the hole grouping other than the four adjacent holes, the detailed illustration of the air gap, and the illustration of the supporting layer are omitted for simplicity of illustration.
- the shape formed in the lattice by connecting the center points of the four adjacent holes 14 a to 14 d in the hole grouping 14 G is a rhombic shape satisfying:
- first, second, third, and fourth sides of the shape of the opening of the through hole at the upper open end 15 u extend in the first-, second-, third-, and fourth-side directions D 1 , D 2 , D 3 , and D 4 , respectively.
- the holes 14 a and 14 b are located adjacent to each other in the first-side direction D 1
- the holes 14 b and 14 c are located adjacent to each other in the second-side direction D 2
- the holes 14 c and 14 d are located adjacent to each other in the third-side direction D 3
- the holes 14 d and 14 a are located adjacent to each other in the fourth-side direction D 4 .
- the MEMS device of this embodiment when sound pressure, air pressure, or the like, for example, travels to the diaphragm 11 through the holes 14 of the hole grouping 14 G, the part of the diaphragm 11 exposed in the through hole 15 vibrates. This vibration causes the distance between the diaphragm 11 and the fixed film 13 (the height of the air gap 16 ) to vary slightly, so that the capacity of the capacitor composed of the diaphragm 11 and the fixed film 13 changes.
- the MEMS device of this embodiment functions as various kinds of sensors.
- the MEMS device When reading capacity change due to sound pressure, the MEMS device functions as a sonic sensor.
- the MEMS device When reading capacity change due to air pressure, the MEMS device functions as a pressure sensor.
- the MEMS device When reading capacity change resulting from change in acceleration, the MEMS device functions as an acceleration sensor (in this case, the holes 14 function as holes through which air passes.
- FIG. 6A is a plan view illustrating the configuration of the air gap and the supporting layer in the MEMS device of the first embodiment of the present invention. However, in FIG. 6A , only a schematic diagram of the air gap is shown, and a detailed illustration thereof is omitted.
- FIG. 6B is a plan view illustrating the configuration of the holes, the air gap, and the supporting layer in the MEMS device of the first embodiment of the present invention. Specifically, FIG. 6B is a magnified plan view of an area R shown in FIG. 6A .
- FIG. 7 is a plan view illustrating the configuration of holes, an air gap, and a supporting layer in a MEMS device according to the comparative example.
- the number of holes 14 shown in FIG. 6B differs from that in FIG. 4
- the number of holes 14 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- This embodiment and the comparative example differ in their configuration in the following respects.
- FIG. 6B when the center points of four adjacent holes 14 in the hole grouping are connected, a rhombic shape is formed in the lattice.
- the outermost holes 14 of the hole grouping are located at regular intervals as shown in FIG. 6B (see the interval W) along the shape of the opening of the through hole at the upper open end 15 u as shown in FIG. 4 .
- the outermost holes 104 of the hole grouping are not located at regular intervals (see the intervals Wl and Ws), and, although not shown, those outermost holes 104 are not located along the shape of the opening of a through hole at the upper open end.
- the outermost holes of the hole grouping means those holes that contribute to the determination of the shape formed by the inner side surfaces of the supporting layer (in other words, the shape of the air gap in plan view).
- this embodiment and the comparative example differ in the arrangement of the holes 14 , 104 of the hole grouping.
- the outermost holes 14 of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the detailed shape of the air gap 16 in plan view has uniform curved portions corresponding to the respective outermost holes 14 of the hole grouping.
- the detailed shape of the air gap 106 in plan view has nonuniform curved portions corresponding to the respective outermost holes 104 of the hole grouping.
- the shape formed by the inner side surfaces of the supporting layer 17 has uniform curved portions
- the shape formed by the inner side surfaces of the supporting layer 107 has nonuniform curved portions.
- stress specifically, e.g., tensile stress or the like applied to the fixed film
- the shape formed by the inner side surfaces of the supporting layer 107 has the nonuniform curved portions
- stress is concentrated in the part of the fixed film that is in contact with the supporting layer 107 .
- those parts being in contact with intersection points I 107 are subjected to higher stress than the part being in contact with the other part of the supporting layer 107 . This causes concentration of stress in the parts of the fixed film that are in contact with the intersection points I 107 .
- the outermost holes 14 of the hole grouping 14 G are located at regular intervals along the shape of the opening of the through hole 15 at the upper open end 15 u . Consequently, the supporting layer 17 is formed so that its inner side surfaces form a shape having uniform curved portions (in other words, the supporting layer 17 is formed so that its inner side surfaces form a shape having uniformly spaced intersection points (the term “intersection points” as used herein means points at which curved portions meet)).
- the fixed film 13 can be formed with higher tensile stress being applied thereto. This prevents the fixed film 13 from sticking to the diaphragm 11 in the process step of forming the air gap and the supporting layer.
- the holes 14 of the hole grouping 14 G which are arranged in a lattice pattern, are uniformly arranged in the fixed film 13 , allowing an etchant to uniformly permeate parts of the sacrificial layer 12 in the process step of forming the air gap and the supporting layer.
- the area of the opening of the through hole 15 at the upper open end 15 u is formed smaller than that of the opening of the air gap 16 , the top surface of the part of the diaphragm 11 exposed in the through hole 15 is entirely exposed in the air gap 16 , thereby allowing the entire part of the diaphragm 11 exposed in the through hole 15 to vibrate.
- an etchant is supplied to parts of the sacrificial layer 12 through the holes 14 of the hole grouping 14 G to remove those parts (specifically, the parts of the sacrificial layer 12 corresponding to the respective holes 14 of the hole grouping 14 G are removed by a wet-etching process).
- the present invention is not limited to this.
- One example of an alternative approach may be to use an etching gas, which is a mixture of a gas containing anhydrous hydrofluoric acid and a gas containing methyl alcohol, or which is a gas containing xenon difluoride, and supply the etching gas to parts of the sacrificial layer through the holes of the hole grouping to remove those parts (specifically, the parts of the sacrificial layer corresponding to the respective holes of the hole grouping may be removed by a dry-etching process).
- Another example of an alternative approach may be a combined use of dry etching and wet etching for removal of the parts of the sacrificial layer corresponding to the respective holes of the hole grouping.
- the outermost holes 14 of the hole grouping 14 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 15 u , and the holes 14 of the hole grouping 14 G are arranged in a lattice pattern.
- the present invention is not limited to this specific example.
- the holes of the hole grouping other than the outermost holes may be arranged in a lattice pattern, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the inner holes of the hole grouping may be arranged randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the inner holes are arranged so as to not to create a situation where the parts of the sacrificial layer that should be removed remain to cause a failure of proper formation of the air gap.
- the outermost holes 14 of the hole grouping 14 G are located at the same regular intervals along all six sides of the shape (i.e., the hexagonal shape) of the opening of the through hole at the upper open end 15 u as shown in FIG. 4 .
- the present invention is not limited to this.
- the outermost holes along each side of the hexagonal shape may be located at regular intervals specifically determined for that side.
- the following describes a MEMS device according to a first modified example of the first embodiment of the present invention with reference to FIGS. 8A to 8C , 9 A and 9 B, 10 A and 10 B, 11 , and 12 .
- FIGS. 8A to 10B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- FIGS. 8A to 10B the plan views shown in the upper sections are as seen from above the top surface of a substrate, the cross-sectional views shown in the middle sections are taken along the lines VIIIa-VIIIa to Xb-Xb, respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate.
- FIGS. 8A to 10B the plan views shown in the upper sections are as seen from above the top surface of a substrate, the cross-sectional views shown in the middle sections are taken along the lines VIIIa-VIIIa to Xb-Xb, respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate.
- process steps shown in FIGS. 8A to 9A are sequentially performed in the same manner as the process steps shown in FIGS. 1A to 2A in the first embodiment, thereby obtaining the configuration shown in FIG. 9A (i.e., obtaining a configuration similar to that shown in FIG. 2A in the first embodiment).
- holes 24 are formed through the fixed film 13 , each exposing the top surface of the sacrificial layer 12 , thereby forming a hole grouping 24 G, composed of the holes 24 , in the fixed film 13 .
- the hole grouping 24 G is formed in such a manner that the outermost holes 24 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end.
- the hole grouping 24 G is also formed so that the holes 24 thereof are arranged in a lattice pattern.
- a through hole 25 is formed through the substrate 10 to expose the bottom surface of the diaphragm 11 .
- the through hole 25 is formed so that its opening has a rhombic shape at the upper and lower open ends.
- parts of the sacrificial layer 12 corresponding to the respective holes 24 of the hole grouping 24 G are removed using the hole grouping 24 G, thereby forming an air gap 26 in the sacrificial layer 12 , and forming a supporting layer 27 out of the remaining part of the sacrificial layer 12 .
- the MEMS device according to this modified example is fabricated.
- the MEMS device includes: the substrate 10 having the through hole 25 ; the diaphragm 11 provided on the top surface of the substrate 10 with the bottom surface of the diaphragm 11 partially exposed in the through hole 25 ; the fixed film 13 provided over the diaphragm 11 with the air gap 26 interposed therebetween and having the hole grouping 24 G composed of the holes 24 each in communication with the air gap 26 ; and the supporting layer 27 interposed between the diaphragm 11 and the fixed film 13 and having the air gap 26 formed therein.
- FIG. 11 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the first modified example of the first embodiment of the present invention.
- the number of holes 24 in the hole grouping 24 G shown in FIG. 11 differs from that in FIG. 10B , the number of holes 24 shown in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- the through hole with the opening having a rhombic shape at the upper open end 25 u , the supporting layer 27 with the air gap 26 formed therein, and the hole grouping 24 G are located in that order in the direction from the bottom surface to the top surface of the substrate.
- the air gap 26 is formed using the hole grouping 24 G, specifically, by removing the parts of the sacrificial layer 12 corresponding to the respective holes 24 of the hole grouping 24 G. Consequently, as shown in FIG. 11 , the detailed shape of the air gap 26 in plan view is defined along the outermost holes 24 of the hole grouping 24 G, and has uniform curved portions corresponding to the respective outermost holes 24 . On the other hand, the general shape of the air gap 26 in plan view is rhombic as shown in FIG. 11 (see the reference numeral 26 o ).
- the shape formed by the inner side surfaces of the supporting layer 27 is defined along the outermost holes 24 of the hole grouping 24 G, and has uniform curved portions corresponding to the respective outermost holes 24 , because the supporting layer 27 is formed of the remaining part of the sacrificial layer 12 that has not been removed.
- the general shape of the air gap 26 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upper open end 25 u as shown in FIG. 11 .
- the outermost holes 24 of the hole grouping 24 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 25 u (in other words, along the general shape of the air gap 26 in plan view) as shown in FIG. 11 . Also, as shown in FIG. 11 , the holes 24 of the hole grouping 24 G are arranged in a lattice pattern.
- the through hole 25 is formed so as to correspond to the air gap 26 with the diaphragm 11 interposed therebetween.
- the area of the opening of the through hole at the upper open end 25 u is smaller than that of the opening of the air gap 26 as shown in FIG. 11 .
- the top surface of the part of the diaphragm 11 exposed in the through hole 25 is entirely exposed in the air gap 26 .
- FIG. 12 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first modified example of the first embodiment of the present invention.
- FIG. 12 shows the same configuration as FIG. 11 .
- the illustration of the holes of the hole grouping other than the four adjacent holes, the detailed illustration of the air gap, and the illustration of the supporting layer are omitted for simplicity of illustration.
- the shape formed in the lattice by connecting the center points of the four adjacent holes 24 a to 24 d in the hole grouping 24 G is a rhombic shape satisfying:
- first, second, third, and fourth sides of the shape of the opening of the through hole at the upper open end 25 u extend in first-, second-, third-, and fourth-side directions D 1 , D 2 , D 3 , and D 4 , respectively.
- the holes 24 a and 24 b are located adjacent to each other in the first-side direction D 1
- the holes 24 b and 24 c are located adjacent to each other in the second-side direction D 2
- the holes 24 c and 24 d are located adjacent to each other in the third-side direction D 3
- the holes 24 d and 24 a are located adjacent to each other in the fourth-side direction D 4 .
- the shape of the opening of the through hole at the upper open end 25 u is rhombic as shown in FIG. 11 , however, the present invention is not limited to this.
- the opening of the through hole may have a quadrilateral shape, such as a rectangular or square shape, at the upper open end.
- the outermost holes 24 of the hole grouping 24 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 25 u , and the holes 24 of the hole grouping 24 G are arranged in a lattice pattern.
- the present invention is not limited to this.
- the inner holes of the hole grouping may be arranged in a lattice pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the outermost holes 24 of the hole grouping 24 G are located at the same regular intervals along all four sides of the shape (i.e., the rhombic shape) of the opening of the through hole at the upper open end 25 u as shown in FIG. 11 .
- the present invention is not limited to this.
- the outermost holes along each side of the rhombic shape may be located at regular intervals specifically determined for that side.
- a substrate having a rhombic shape in plan view is used as the substrate 10 .
- the present invention is not limited to this.
- a substrate having a rectangular or square shape in plan view may also be used.
- the following describes a MEMS device according to a second modified example of the first embodiment of the present invention with reference to FIGS. 13A to 13C , 14 A and 14 B, 15 A and 15 B, and 16 .
- FIGS. 13A to 15B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed.
- the plan views shown in the upper sections are as seen from above the top surface of a substrate
- the cross-sectional views shown in the middle sections are taken along the lines XIIIa-XIIIa to XVb-XVb, respectively
- the plan views shown in the lower sections are as seen from the bottom surface of the substrate.
- the components in this modified example are made of the same materials as those in the first embodiment.
- a substrate 30 having a (110) crystal face, and having a square shape in plan view.
- a diaphragm 31 having a square shape in plan view, is formed on the top surface of the substrate 30 .
- a sacrificial layer 32 having a square shape in plan view, is formed on the diaphragm 31 .
- a fixed film 33 having a square shape in plan view, is formed on the sacrificial layer 32 .
- holes 34 are formed through the fixed film 33 , each exposing the top surface of the sacrificial layer 32 , thereby forming a hole grouping 34 G, composed of the holes 34 , in the fixed film 33 .
- the hole grouping 34 G is formed in such a manner that the outermost holes 34 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end.
- the hole grouping 34 G is formed so that the holes 34 thereof other than the outermost holes 34 (hereinafter referred to as “inner holes 34 of the hole grouping 34 G”) are arranged in a lattice pattern.
- a through hole 35 is formed through the substrate 30 to expose the bottom surface of the diaphragm 31 .
- the through hole 35 is formed so that its opening has an octagonal shape at the upper and lower open ends.
- parts of the sacrificial layer 32 corresponding to the respective holes 34 of the hole grouping 34 G are removed using the hole grouping 34 G, thereby forming an air gap 36 in the sacrificial layer 32 , and forming a supporting layer 37 out of the remaining part of the sacrificial layer 32 .
- the MEMS device according to this modified example is fabricated.
- the MEMS device includes: the substrate 30 having the through hole 35 ; the diaphragm 31 provided on the top surface of the substrate 30 with the bottom surface of the diaphragm 31 partially exposed in the through hole 35 ; the fixed film 33 provided over the diaphragm 31 with the air gap 36 interposed therebetween and having the hole grouping 34 G composed of the holes 34 each in communication with the air gap 36 ; and the supporting layer 37 interposed between the diaphragm 31 and the fixed film 33 and having the air gap 36 formed therein.
- FIG. 16 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the second modified example of the first embodiment of the present invention.
- the number of holes 34 in the hole grouping 34 G shown in FIG. 16 differs from that in FIG. 15B , the number of holes 34 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- the through hole with the opening having an octagonal shape at the upper open end 35 u , the supporting layer 37 with the air gap 36 formed therein, and the hole grouping 34 G are located in that order in the direction from the bottom surface to the top surface of the substrate.
- the air gap 36 is formed using the hole grouping 34 G, specifically, by removing the parts of the sacrificial layer 32 corresponding to the respective holes 34 of the hole grouping 34 G. Consequently, as shown in FIG. 16 , the detailed shape of the air gap 36 in plan view is defined along the outermost holes 34 of the hole grouping 34 G, and thus has uniform curved portions corresponding to the respective outermost holes 34 . On the other hand, the general shape of the air gap 36 in plan view is octagonal as shown in FIG. 16 (see the reference numeral 36 o ).
- the shape formed by the inner side surfaces of the supporting layer 37 is defined along the outermost holes 34 of the hole grouping 34 G, and has uniform curved portions corresponding to the respective outermost holes 34 , because the supporting layer 37 is formed of the remaining part of the sacrificial layer 32 that has not been removed.
- the general shape of the air gap 36 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upper open end 35 u as shown in FIG. 16 .
- the outermost holes 34 of the hole grouping 34 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 35 u (in other words, along the general shape of the air gap 36 in plan view) as shown in FIG. 16 .
- the inner holes 34 of the hole grouping 34 G i.e., the holes 34 of the hole grouping 34 G other than the outermost holes 34
- the inner holes 34 of the hole grouping 34 G are arranged in a lattice pattern. When the center points of four adjacent holes of the inner holes 34 are connected, a rhombic shape (or a square shape) is formed in the lattice.
- the through hole 35 is formed so as to correspond to the air gap 36 with the diaphragm 31 interposed therebetween.
- the area of the opening of the through hole at the upper open end 35 u is smaller than that of the opening of the air gap 36 as shown in FIG. 16 .
- the top surface of the part of the diaphragm 31 exposed in the through hole 35 is entirely exposed in the air gap 36 .
- the outermost holes 34 of the hole grouping 34 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 35 u , and the inner holes 34 are arranged in a lattice pattern.
- the present invention is not limited to this.
- the holes of the hole grouping may be arranged in a lattice pattern, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Another example of an alternative approach may be as follows: the inner holes of the hole grouping may be arranged randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- the outermost holes 34 of the hole grouping 34 G are located at the same regular intervals along all eight sides of the shape (i.e., the octagonal shape) of the opening of the through hole at the upper open end 35 u as shown in FIG. 16 .
- the present invention is not limited to this.
- the outermost holes along each side of the octagonal shape may be located at regular intervals specifically determined for that side.
- a substrate having a square shape in plan view is used as the substrate 30 .
- the present invention is not limited to this.
- a substrate having a rectangular, rhombic, or some other shape in plan view may also be used.
- FIGS. 17A to 19B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed.
- the plan views shown in the upper sections are as seen from the top surface of a substrate
- the cross-sectional views shown in the middle sections are taken along the lines XVIIa-XVIIa to XIXb-XIXb, respectively
- the plan views shown in the lower sections are as seen from the bottom surface of the substrate.
- process steps shown in FIGS. 17A to 18A are sequentially performed in the same manner as the process steps shown in FIGS. 13A to 14A in the second modified example of the first embodiment, thereby obtaining the configuration shown in FIG. 18A (i.e., obtaining a configuration similar to that shown in FIG. 14A in the second modified example of the first embodiment).
- holes 44 are formed through the fixed film 33 , each exposing the top surface of the sacrificial layer 32 , thereby forming a hole grouping 44 G, composed of the holes 44 , in the fixed film 33 .
- the hole grouping 44 G is formed in such a manner that the outermost holes 44 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end.
- the hole grouping 44 G is also formed so that the holes 44 thereof other than the outermost holes 44 (hereinafter referred to as “inner holes 44 of the hole grouping 44 G”) are arranged in a lattice pattern.
- a through hole 45 is formed through the substrate 30 to expose the bottom surface of the diaphragm 31 .
- the through hole 45 is formed so that the opening thereof has a circular shape at the upper and lower open ends.
- parts of the sacrificial layer 32 corresponding to the respective holes 44 of the hole grouping 44 G are removed using the hole grouping 44 G, thereby forming an air gap 46 in the sacrificial layer 32 , and forming a supporting layer 47 out of the remaining part of the sacrificial layer 32 .
- the MEMS device according to this embodiment is fabricated.
- the MEMS device includes: the substrate 30 having the through hole 45 ; the diaphragm 31 provided on the top surface of the substrate 30 with the bottom surface of the diaphragm 31 partially exposed in the through hole 45 ; the fixed film 33 provided over the diaphragm 31 with the air gap 46 interposed therebetween and having the hole grouping 44 G composed of the holes 44 each in communication with the air gap 46 ; and the supporting layer 47 interposed between the diaphragm 31 and the fixed film 33 and having the air gap 46 formed therein.
- FIG. 20 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap 46 , and the supporting layer 47 in the MEMS device according to the second embodiment of the present invention.
- the number of holes 44 in the hole grouping 44 G shown in FIG. 20 differs from that in FIG. 19B , the number of holes 44 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- the through hole with the opening having a circular shape at the upper open end 45 u , the supporting layer 47 with the air gap 46 formed therein, and the hole grouping 44 G are located in that order in the direction from the bottom surface to the top surface of the substrate.
- the air gap 46 is formed using the hole grouping 44 G, specifically, by removing the parts of the sacrificial layer 32 corresponding to the respective holes 44 of the hole grouping 44 G.
- the detailed shape of the air gap 46 in plan view is defined along the outermost holes 44 of the hole grouping 44 G, and has uniform curved portions corresponding to the respective outermost holes 44 .
- the general shape of the air gap 46 in plan view is circular as shown in FIG. 20 (see the reference numeral 46 o ).
- the shape formed by the inner side surfaces of the supporting layer 47 is defined along the outermost holes 44 of the hole grouping 44 G, and has uniform curved portions corresponding to the respective outermost holes 44 , because the supporting layer 47 is formed of the remaining part of the sacrificial layer 32 that has not been removed.
- the general shape of the air gap 46 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upper open end 45 u as shown in FIG. 20 .
- the outermost holes 44 of the hole grouping 44 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 45 u (in other words, along the general shape of the air gap 46 in plan view) as shown in FIG. 20 .
- the inner holes 44 of the hole grouping 44 G i.e., the holes 44 of the hole grouping 44 G other than the outermost holes 44
- the inner holes 44 of the hole grouping 44 G are arranged in a lattice pattern.
- a rhombic shape or a square shape
- the through hole 45 is formed so as to correspond to the air gap 46 with the diaphragm 31 interposed therebetween.
- the area of the opening of the through hole at the upper open end 45 u is smaller than that of the opening of the air gap 46 .
- the top surface of the part of the diaphragm 31 that is exposed in the through hole 45 is entirely exposed in the air gap 46 .
- the outermost holes 44 of the hole grouping 44 G are located at regular intervals along the shape of the opening of the through hole 45 at the upper open end 45 u .
- the supporting layer 47 is formed so that its inner side surfaces form a shape having uniform curved portions (in other words, the supporting layer 47 is formed so that its inner side surfaces form a shape having uniformly spaced intersection points). This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the fixed film 33 ) and resulting cracks in specific locations (specifically, e.g., at specific intersection points or the like) in the part of the fixed film 33 that is in contact with the supporting layer 47 .
- the fixed film 33 can be formed with higher tensile stress being applied thereto. This prevents the fixed film 33 from sticking to the diaphragm 31 in the process step of forming the air gap and the supporting layer.
- the inner holes 44 of the hole grouping 44 G which are arranged in a lattice pattern, are arranged uniformly in the fixed film 33 , thereby allowing an etchant to uniformly permeate parts of the sacrificial layer 32 in the process step of forming the air gap and the supporting layer.
- the area of the opening of the through hole 45 at the upper open end 45 u is formed smaller than that of the opening of the air gap 46 , the top surface of the part of the diaphragm 31 exposed in the through hole 45 is entirely exposed in the air gap 46 , enabling the entire part of the diaphragm 31 exposed in the through hole 45 to vibrate.
- the outermost holes 44 of the hole grouping 44 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 45 u , and the inner holes 44 are arranged in a lattice pattern.
- the present invention is not limited to this.
- the inner holes of the hole grouping may be arranged in a concentric circle pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- FIG. 21 illustrates the configuration of the MEMS device according to the modified example of the second embodiment of the present invention.
- the plan view shown in the upper section is as seen from above the top surface of a substrate
- the cross-sectional view shown in the middle section is taken along the line XXI-XXI
- the plan view shown in the lower section is as seen from the bottom surface of the substrate.
- the same components as those of the second embodiment shown in FIG. 19B are identified by the same reference numerals.
- the description already provided in the second embodiment will not be repeated as appropriate in order to avoid duplication.
- the MEMS device includes: a substrate 30 having a through hole 55 ; a diaphragm 31 provided on the top surface of the substrate 30 with the bottom surface of the diaphragm 31 partially exposed in the through hole 55 ; a fixed film 33 provided over the diaphragm 31 with an air gap 56 interposed therebetween and having a hole grouping 54 G composed of holes 54 each in communication with the air gap 56 ; and a supporting layer 57 interposed between the diaphragm 31 and the fixed film 33 and having the air gap 56 formed therein.
- FIG. 22 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the modified example of the second embodiment of the present invention.
- the number of holes 54 in the hole grouping 54 G shown in FIG. 22 differs from that in FIG. 21
- the number of holes 54 shown in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number.
- the through hole with an opening having an elliptical shape at the upper open end 55 u , the supporting layer 57 with the air gap 56 formed therein, and the hole grouping 54 G are located in that order in the direction from the bottom surface to the top surface of the substrate.
- the detailed shape of the air gap 56 in plan view is defined along the outermost holes 54 of the hole grouping 54 G, and has uniform curved portions corresponding to the respective outermost holes 54 as shown in FIG. 22 .
- the general shape of the air gap 56 in plan view is elliptical as shown in FIG. 22 (see the reference numeral 56 o ).
- the shape formed by the inner side surfaces of the supporting layer 57 is defined along the outermost holes 54 of the hole grouping 54 G, and has uniform curved portions corresponding to the respective outermost holes 54 .
- the general shape of the air gap 56 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upper open end 55 u.
- the outermost holes 54 of the hole grouping 54 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 55 u (in other words, along the general shape of the air gap 56 in plan view) as shown in FIG. 22 .
- the inner holes 54 of the hole grouping 54 G i.e., the holes 54 of the hole grouping 54 G other than the outermost holes 54
- the inner holes 54 of the hole grouping 54 G are arranged in a lattice pattern.
- a rhombic shape or a square shape
- the through hole 55 is formed so as to correspond to the air gap 56 with the diaphragm 31 interposed therebetween.
- the area of the opening of the through hole at the upper open end 55 u is smaller than that of the opening of the air gap 56 .
- the top surface of the part of the diaphragm 31 exposed in the through hole 55 is entirely exposed in the air gap 56 .
- the outermost holes 54 of the hole grouping 54 G are located at regular intervals along the shape of the opening of the through hole at the upper open end 55 u , and the inner holes 54 are arranged in a lattice pattern.
- the present invention is not limited to this.
- the inner holes of the hole grouping may be arranged in a concentric ellipse pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- a substrate having a square shape in plan view is used as the substrate 30 .
- the present invention is not limited to this.
- a substrate having a rectangular, rhombic, or some other shape in plan view may also be used.
- the diaphragm 11 , 31 is provided directly on the top surface of the substrate 10 , 30 .
- the present invention is not limited to this.
- the diaphragm may be provided over the top surface of the substrate with a supporting member made of, e.g., an insulating film interposed therebetween.
- the present invention capable of preventing cracks in fixed films, is applicable to MEMS devices including fixed films and methods for fabricating the same.
Abstract
Description
- The disclosure of Japanese Patent Application No. 2008-335032 filed on Dec. 26, 2008 including specification, drawings and claims is incorporated herein by reference in its entirety.
- The present invention relates to devices, such as sensors, using MEMS (Micro Electro Mechanical Systems) techniques, and methods for fabricating the same.
- A technique called MEMS has recently seen progress in the art, which utilizes miniature processing techniques used in the fabrication of semiconductor LSI (Large Scale Integration) circuits. Using MEMS techniques, various miniature components, such as acceleration sensors, pressure sensors, and sonic sensors, have been proposed, and commercialization thereof has started.
- Devices using MEMS techniques (hereinafter referred to as “MEMS devices”) include, as their major components, a substrate having a through hole, a diaphragm provided on the top surface of the substrate, a fixed film provided over the diaphragm with an air gap interposed therebetween and having a hole grouping composed of holes, and a supporting layer interposed between the diaphragm and the fixed film.
- The configuration of a fixed film having a hole grouping composed of holes will be described below with reference to
FIG. 23 (see, for example, Patent Document 1: Japanese Unexamined Patent Application Publication No. 2004-506394).FIG. 23 is a plan view illustrating the configuration of a fixed film in a conventional MEMS device. - As shown in
FIG. 23 , a hole grouping 201G, in which allholes 201 are arranged in a lattice pattern, is formed in afixed film 200. When the center points of fouradjacent holes 201 in the hole grouping 201G are connected, a square shape is formed in the lattice (see the dotted lines shown inFIG. 23 ). - In MEMS device fabrication methods, one known technique for forming an air gap and a supporting layer is to form these elements by using a hole grouping. Specifically, there is a known technique in the art in which, for example, an etchant is supplied through the holes of a hole grouping to permeate part of a sacrificial layer interposed between a diaphragm and a fixed film, and the part of the sacrificial layer having the permeating etchant therein is removed, thereby forming an air gap in the sacrificial layer, and forming a supporting layer out of the remaining part of the sacrificial layer.
- In this technique, the air gap is formed so that its shape in plan view is defined along the outermost holes of the hole grouping. In other words, the supporting layer is formed so that the inner side surfaces thereof form a shape along the outermost holes of the hole grouping.
- More specifically, for example, in the MEMS device including the fixed film shown in
FIG. 23 , the air gap is formed so that its shape in plan view is defined along theoutermost holes 201 of the hole grouping 201G as set forth above. Therefore, as shown inFIG. 24 , theair gap 300 is formed so as to have nonuniform corner portions C300 in its shape in plan view. In other words, the supporting layer is formed so that the inner side surfaces thereof form a shape having nonuniform corner portions. - Thus, in the part of the fixed film that is in contact with the supporting layer, those parts being in contact with the nonuniform corner portions are subjected to higher stress than the part being in contact with the other part of the supporting layer. Consequently, stress is concentrated in the parts of the fixed film being in contact with the corner portions, and cracks occur in those parts of the fixed film where stress is concentrated.
- In this way, the present inventor, who focused on the supporting layer formation method, found that the supporting layer is formed using the hole grouping, and thus is formed so that the inner side surfaces thereof have a shape defined along the outermost holes of the hole grouping. The present inventor also found that when the inner side surfaces of the supporting layer have a nonuniform shape, stress is concentrated, and thus cracks occur in the part of the fixed film that is in contact with the supporting layer.
- In view of the above, it is an object of the present invention to prevent cracks in fixed films in MEMS devices.
- In order to achieve the object, a MEMS device according to a first aspect of the present invention includes: a substrate having a through hole; a first film provided on a top surface of the substrate with a bottom surface of the first film exposed in the through hole; a second film provided over the first film with an air gap interposed therebetween, and having a hole grouping including holes each in communication with the air gap; and a supporting layer interposed between the first and second films and having the air gap formed therein. Outermost holes of the hole grouping are located at regular intervals along a shape of an opening of the through hole at an upper open end.
- In the MEMS device according to the first aspect of the present invention, the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end. Thus, the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions (in other words, the supporting layer is formed so that the inner side surfaces thereof have a uniform shape). This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer. Here, when the openings of the holes have, e.g., a quadrilateral shape, the term “corresponding portions” means corner portions along the quadrilateral shapes, and when the openings of the holes have, e.g., a circular shape, curved portions along the circular shapes.
- At the same time, it is also possible to prevent concentration of stress and resulting cracks in the inner side surfaces of the supporting layer, because the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions.
- In addition, the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thereby preventing the second film from sticking to the first film.
- In the MEMS device according to the first aspect of the present invention, inner side surfaces of the supporting layer preferably form a shape having uniform corresponding portions, which are uniformly located corresponding to the respective outermost holes of the hole grouping.
- In the MEMS device according to the first aspect of the present invention, the holes of the hole grouping are preferably arranged in a lattice pattern.
- Then, the holes of the hole grouping are uniformly arranged in the second film.
- In the MEMS device according to the first aspect of the present invention, holes of the hole grouping other than the outermost holes are preferably arranged in a lattice pattern.
- Then, the holes of the hole grouping other than the outermost holes are uniformly arranged in the second film.
- In the MEMS device according to the first aspect of the present invention, the shape of the opening of the through hole at the upper open end is preferably quadrilateral, hexagonal, octagonal, circular, or elliptical.
- In order to achieve the above-described object, a method for fabricating a MEMS device according to a second aspect of the present invention includes the steps of: (a) forming a first film on a top surface of a substrate; (b) forming a second film over the first film with a sacrificial layer interposed therebetween; (c) forming, in the second film, a hole grouping including holes each passing through the second film; (d) forming, in the substrate, a through hole exposing a bottom surface of the first film, after the step (c) is performed; and (e) removing, using the hole grouping, parts of the sacrificial layer corresponding to the respective holes of the hole grouping, thereby forming an air gap in the sacrificial layer and forming a supporting layer out of a remaining part of the sacrificial layer, after the step (d) is performed. In the step (c), the hole grouping is formed so that outermost holes thereof are located at regular intervals along a shape of an opening of the through hole at an upper open end; and in the step (e), the supporting layer is formed so that inner side surfaces thereof form a shape along the outermost holes of the hole grouping.
- In the method for fabricating a MEMS device according to the second aspect of the present invention, the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end. Consequently, the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions. This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer.
- At the same time, it is also possible to prevent concentration of stress and resulting cracks in the inner side surfaces of the supporting layer, because the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions.
- In addition, the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thus preventing the second film from sticking to the first film in the process step of forming the air gap and the supporting layer.
- In the method for fabricating a MEMS device according to the second aspect of the present invention, in the step (e), an etchant or an etching gas is preferably supplied to the parts of the sacrificial layer through the holes of the hole grouping, thereby removing those parts.
- In the method for fabricating a MEMS device according to the second aspect of the present invention, in the step (c), the hole grouping is preferably formed so that the holes thereof are arranged in a lattice pattern.
- Then, the holes of the hole grouping are uniformly arranged in the second film, thus enabling an etchant or etching gas to uniformly permeate the parts of the sacrificial layer in the process step of forming the air gap and the supporting layer.
- In the method for fabricating a MEMS device according to the second aspect of the present invention, in the step (c), the hole grouping is preferably formed so that holes thereof other than the outermost holes are arranged in a lattice pattern.
- Then, the holes of the hole grouping other than the outermost holes are uniformly arranged in the second film, thus enabling an etchant or etching gas to uniformly permeate the parts of the sacrificial layer in the process step of forming the air gap and the supporting layer.
- In the method for fabricating a MEMS device according to the second aspect of the present invention, in the step (d), the through hole is preferably formed so that the shape of the opening at the upper open end is quadrilateral, hexagonal, octagonal, circular, or elliptical.
- It will be appreciated that the characteristics described above may be combined in any noncontradictory manner as appropriate. Also, even when multiple effects are expected in each characteristic, all of those effects need not necessarily be produced.
- As set forth above, in the MEMS device and fabrication method therefor according to the first and second aspects of the present invention, the outermost holes of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end. Thus, the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions. This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the second film) and resulting cracks in the part of the second film that is in contact with the supporting layer.
- At the same time, it is also possible to prevent concentration of stress and resulting cracks in the inner side surfaces of the supporting layer, because the supporting layer is formed so that the inner side surfaces thereof form a shape having uniform corresponding portions.
- In addition, the prevention of cracks in the second film allows the second film to be formed with higher tensile stress being applied thereto, thus preventing the second film from sticking to the first film in the process step of forming the air gap and the supporting layer.
-
FIGS. 1A-1C sequentially show process steps of a method for fabricating a MEMS device according to a first embodiment of the present invention, illustrating how major components thereof are formed. -
FIGS. 2A and 2B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIGS. 3A and 3B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIG. 4 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the first embodiment of the present invention. -
FIG. 5 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first embodiment of the present invention. -
FIG. 6A is a plan view illustrating the configuration of the air gap and the supporting layer in the MEMS device of the first embodiment of the present invention, andFIG. 6B is a plan view illustrating the configuration of the holes, the air gap, and the supporting layer in the MEMS device of the first embodiment of the present invention. -
FIG. 7 is a plan view illustrating the configuration of holes, an air gap, and a supporting layer in a MEMS device according to a comparative example. -
FIGS. 8A-8C sequentially show process steps of a method for fabricating a MEMS device according to a first modified example of the first embodiment of the present invention, illustrating how major components thereof are formed. -
FIGS. 9A and 9B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIGS. 10A and 10B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIG. 11 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the first modified example of the first embodiment of the present invention. -
FIG. 12 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first modified example of the first embodiment of the present invention. -
FIGS. 13A-13C sequentially show process steps of a method for fabricating a MEMS device according to a second modified example of the first embodiment of the present invention, illustrating how major components thereof are formed. -
FIGS. 14A and 14B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIGS. 15A and 15B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. -
FIG. 16 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the second modified example of the first embodiment of the present invention. -
FIGS. 17A-17C sequentially show process steps of a method for fabricating a MEMS device according to a second embodiment of the present invention, illustrating how major components thereof are formed. -
FIGS. 18A and 18B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed. -
FIGS. 19A and 19B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed. -
FIG. 20 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the second embodiment of the present invention. -
FIG. 21 illustrates the configuration of a MEMS device according to a modified example of the second embodiment of the present invention. -
FIG. 22 is a plan view illustrating the configuration of a hole grouping, the upper open end of a through hole, an air gap, and a supporting layer in the MEMS device according to the modified example of the second embodiment of the present invention. -
FIG. 23 is a plan view illustrating the configuration of a fixed film in a conventional MEMS device. -
FIG. 24 is a plan view illustrating the configuration of an air gap in the conventional MEMS device. - The embodiments of the present invention will be described hereinafter with reference to the accompanying drawings.
- The following describes a MEMS device according to a first embodiment of the present invention with reference to
FIGS. 1A to 1C , 2A and 2B, 3A and 3B, 4, 5, 6A and 6B, and 7. - A method for fabricating the MEMS device according to the first embodiment of the present invention will be described below with reference to
FIGS. 1A to 3B .FIGS. 1A to 3B sequentially show process steps of the method for fabricating the MEMS device according to the first embodiment of the present invention, illustrating how the major components thereof are formed. To be specific, inFIGS. 1A to 3B , the plan views shown in the upper sections are as seen from above the top surface of a substrate, the cross-sectional views shown the middle sections are taken along the lines Ia-Ia to IIIb-IIIb respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate. Herein, “the top surface of the substrate” means the side of the substrate where a diaphragm is formed, and “the bottom surface of the substrate” means the side facing the side where the diaphragm is formed. - First, as shown in
FIG. 1A , there is provided asubstrate 10 having a (110) crystal face, and having a rhombic shape in plan view. Thesubstrate 10 may be made of silicon, for example. - Next, as shown in
FIG. 1B , adiaphragm 11, having a rhombic shape in plan view, is formed on the top surface of thesubstrate 10. Thediaphragm 11 needs to function as a vibrating electrode. Thus, it is preferable to use, as thediaphragm 11, a single-layer film of a conductive film or a multilayer film composed of a conductive film and an insulating film. Examples of the conductive film include a polysilicon film and a metal film, such as an aluminum film. Examples of the insulating film include a silicon oxide film and a silicon nitride film. - Subsequently, as shown in
FIG. 1C , asacrificial layer 12, having a rhombic shape in plan view, is formed on thediaphragm 11. Thesacrificial layer 12 is partially removed in a later process step to form an air gap (see thereference numeral 16 inFIG. 3B ). The remaining part of thesacrificial layer 12 that has not been removed serves as a supporting layer (see thereference numeral 17 inFIG. 3B ) for supporting a fixed film (see thereference numeral 13 inFIG. 3B ). In this embodiment, the thickness of thesacrificial layer 12 is set to a desired air gap height (in other words, a desired supporting layer height), e.g., 4 μm. As thesacrificial layer 12, an insulating film is preferably used. The insulating film may be a silicon oxide film, for example. - Then, as shown in
FIG. 2A , the fixedfilm 13, having a rhombic shape in plan view, is formed on thesacrificial layer 12. The fixedfilm 13, which needs to function as a fixed electrode, is formed with tensile stress applied thereto. As the fixedfilm 13, a single-layer film of a conductive film or a multilayer film composed of a conductive film and an insulating film is preferably used. Examples of the conductive film include a polysilicon film and a metal film, such as an aluminum film. Examples of the insulating film include a silicon oxide film and a silicon nitride film. In this way, the fixedfilm 13 is formed over thediaphragm 11 with thesacrificial layer 12 interposed therebetween. - Next, as shown in
FIG. 2B , holes 14 are formed through the fixedfilm 13, each exposing the top surface of thesacrificial layer 12, thereby forming ahole grouping 14G, composed of theholes 14, in the fixedfilm 13. In this process step, thehole grouping 14G is formed in such a manner that theoutermost holes 14 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the open end that is located at the same level as the substrate top surface (hereinafter referred to as the “upper open end”; see thereference numeral 15 u inFIG. 3A ). Thehole grouping 14G is also formed so that theholes 14 thereof are arranged in a lattice pattern. Here, “the hole grouping” means the set of all holes formed in the fixed film. - Next, as shown in
FIG. 3A , a thin film (not shown) having an opening pattern is formed on the bottom surface of thesubstrate 10. Then, with the thin film used as a mask, thesubstrate 10 is wet etched using an etchant, which is an alkaline chemical solution, such as, KOH (potassium hydroxide) or TMAH (tetramethyl ammonium hydroxide, (CH3)4NOH), for example. As a result, a throughhole 15, in which the bottom surface of thediaphragm 11 is exposed, is formed through thesubstrate 10. In this process step, as can be seen from the plan view shown in the lower section ofFIG. 3A , the throughhole 15 is formed so that its opening has a rhombic shape at the open end 15 l located at the same level as the substrate bottom surface (hereinafter referred to as the “lower open end”), and has a hexagonal shape at the upperopen end 15 u. Then, the thin film is removed. - Subsequently, as shown in
FIG. 3B , an etchant, for example, an acid chemical solution, such as HF (hydrofluoric acid), is supplied through theholes 14 of thehole grouping 14G so as to permeate parts of thesacrificial layer 12. The etchant spreads outwardly from eachhole 14 of thehole grouping 14G to permeate parts of thesacrificial layer 12. Consequently, the parts of thesacrificial layer 12 in which the etchant has permeated are removed, thereby forming theair gap 16 in thesacrificial layer 12, and forming the supportinglayer 17 out of the remaining part of thesacrificial layer 12. In this way, the parts of thesacrificial layer 12 corresponding to therespective holes 14 of thehole grouping 14G are removed using thehole grouping 14G, thereby forming theair gap 16 and the supportinglayer 17. In this process step, theair gap 16 is formed so that its shape in plan view is defined along theoutermost holes 14 of thehole grouping 14G, and the supportinglayer 17 is formed so that its inner side surfaces form a shape along theoutermost holes 14 of thehole grouping 14G. Here, “the parts of the sacrificial layer corresponding to the respective holes of the hole grouping” include (1) parts of the sacrificial layer located directly under the respective holes of the hole grouping, and (2) parts of the sacrificial layer located under the outer edges of the respective holes. - In this manner, the MEMS device according to this embodiment is fabricated.
- The configuration of the MEMS device according to the first embodiment of the present invention will be described below with reference to
FIG. 3B . - As shown in
FIG. 3B , the MEMS device according to this embodiment includes: thesubstrate 10 having the throughhole 15; the diaphragm (first film) 11 provided on the top surface of thesubstrate 10 with the bottom surface of thediaphragm 11 partially exposed in the throughhole 15; the fixed film (second film) 13 provided over thediaphragm 11 with theair gap 16 interposed therebetween and having thehole grouping 14G composed of theholes 14 each in communication with theair gap 16; and the supportinglayer 17 interposed between thediaphragm 11 and the fixedfilm 13 and having theair gap 16 formed therein. - Now, the configuration of the
hole grouping 14G, the upperopen end 15 u of the throughhole 15, theair gap 16, and the supportinglayer 17 will be discussed with reference toFIG. 4 .FIG. 4 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the first embodiment of the present invention. Although the number ofholes 14 of thehole grouping 14G shown inFIG. 4 differs from that inFIG. 3B , the number ofholes 14 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - As shown in
FIG. 4 , the through hole with the opening having a hexagonal shape at the upperopen end 15 u, the supportinglayer 17 with theair gap 16 formed therein, and thehole grouping 14G are located in that order in the direction from the bottom surface to the top surface of the substrate. - In this embodiment, the
air gap 16 is formed using thehole grouping 14G, specifically, by removing the parts of thesacrificial layer 12 corresponding to therespective holes 14 of thehole grouping 14G. Consequently, as shown inFIG. 4 , the detailed shape of theair gap 16 in plan view is defined along theoutermost holes 14 of thehole grouping 14G, and has uniform curved portions corresponding to the respectiveoutermost holes 14. On the other hand, the general shape of theair gap 16 in plan view is hexagonal as shown inFIG. 4 (see the reference numeral 16 o). - In other words, the shape formed by the inner side surfaces of the supporting
layer 17 is defined along theoutermost holes 14 of thehole grouping 14G, and has uniform curved portions (corresponding portions) corresponding to the respectiveoutermost holes 14, because the supportinglayer 17 is formed of the remaining part of thesacrificial layer 12 that has not been removed. - Furthermore, since the
air gap 16 is formed using thehole grouping 14G, the general shape of theair gap 16 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upperopen end 15 u as shown inFIG. 4 . - The
outermost holes 14 of thehole grouping 14G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 15 u (in other words, along the general shape of theair gap 16 in plan view) as shown inFIG. 4 . Also, as shown inFIG. 4 , theholes 14 of thehole grouping 14G are arranged in a lattice pattern. - As shown in
FIG. 3B , the throughhole 15 is formed so as to correspond to theair gap 16 with thediaphragm 11 interposed therebetween. The area of the opening of the through hole at the upperopen end 15 u is smaller than that of the opening of theair gap 16 as shown inFIG. 4 . Thus, the top surface of the part of thediaphragm 11 exposed in the throughhole 15 is entirely exposed in theair gap 16. - Now, the configuration of the
hole grouping 14G will be discussed with reference toFIG. 5 .FIG. 5 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first embodiment of the present invention.FIG. 5 shows the same configuration asFIG. 4 . However, inFIG. 5 , the illustration of the holes of the hole grouping other than the four adjacent holes, the detailed illustration of the air gap, and the illustration of the supporting layer are omitted for simplicity of illustration. - As shown in
FIG. 5 , when the center points of the fouradjacent holes 14 a to 14 d in thehole grouping 14G are connected, a rhombic shape is formed in the lattice. - When the opening of the through hole at the upper
open end 15 u has a hexagonal shape satisfying: - the interior angle A1, A4=x°, and
- the interior angle A2, A3, A5, A6=180°−0.5x°,
- then the shape formed in the lattice by connecting the center points of the four
adjacent holes 14 a to 14 d in thehole grouping 14G is a rhombic shape satisfying: - the interior angle A14 a, A14 c=x°, and
- the interior angle A14 b, A14 d=180°−x°.
- As shown in
FIG. 5 , it is assumed that the first, second, third, and fourth sides of the shape of the opening of the through hole at the upperopen end 15 u extend in the first-, second-, third-, and fourth-side directions D1, D2, D3, and D4, respectively. In this case, of the fouradjacent holes 14 a to 14 d, theholes holes holes holes - The following describes functions of the MEMS device of this embodiment.
- In the MEMS device of this embodiment, when sound pressure, air pressure, or the like, for example, travels to the
diaphragm 11 through theholes 14 of thehole grouping 14G, the part of thediaphragm 11 exposed in the throughhole 15 vibrates. This vibration causes the distance between thediaphragm 11 and the fixed film 13 (the height of the air gap 16) to vary slightly, so that the capacity of the capacitor composed of thediaphragm 11 and the fixedfilm 13 changes. By reading this capacity change, the MEMS device of this embodiment functions as various kinds of sensors. When reading capacity change due to sound pressure, the MEMS device functions as a sonic sensor. When reading capacity change due to air pressure, the MEMS device functions as a pressure sensor. When reading capacity change resulting from change in acceleration, the MEMS device functions as an acceleration sensor (in this case, theholes 14 function as holes through which air passes. - Now, in order to effectively describe effects of this embodiment, a description will be made by referring to this embodiment and a comparative example.
FIG. 6A is a plan view illustrating the configuration of the air gap and the supporting layer in the MEMS device of the first embodiment of the present invention. However, inFIG. 6A , only a schematic diagram of the air gap is shown, and a detailed illustration thereof is omitted.FIG. 6B is a plan view illustrating the configuration of the holes, the air gap, and the supporting layer in the MEMS device of the first embodiment of the present invention. Specifically,FIG. 6B is a magnified plan view of an area R shown inFIG. 6A .FIG. 7 is a plan view illustrating the configuration of holes, an air gap, and a supporting layer in a MEMS device according to the comparative example. Although the number ofholes 14 shown inFIG. 6B differs from that inFIG. 4 , the number ofholes 14 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - This embodiment and the comparative example differ in their configuration in the following respects.
- In this embodiment, as shown in
FIG. 6B , when the center points of fouradjacent holes 14 in the hole grouping are connected, a rhombic shape is formed in the lattice. Theoutermost holes 14 of the hole grouping are located at regular intervals as shown inFIG. 6B (see the interval W) along the shape of the opening of the through hole at the upperopen end 15 u as shown inFIG. 4 . - On the other hand, in the comparative example, as shown in
FIG. 7 , when the center points of fouradjacent holes 104 in the hole grouping are connected, a square shape is formed in the lattice. Theoutermost holes 104 of the hole grouping are not located at regular intervals (see the intervals Wl and Ws), and, although not shown, thoseoutermost holes 104 are not located along the shape of the opening of a through hole at the upper open end. As can be seen fromFIGS. 6B and 7 , “the outermost holes of the hole grouping” means those holes that contribute to the determination of the shape formed by the inner side surfaces of the supporting layer (in other words, the shape of the air gap in plan view). - In this way, this embodiment and the comparative example differ in the arrangement of the
holes - In this embodiment, the
outermost holes 14 of the hole grouping are located at regular intervals along the shape of the opening of the through hole at the upper open end. Hence, as shown inFIG. 6B , the detailed shape of theair gap 16 in plan view has uniform curved portions corresponding to the respectiveoutermost holes 14 of the hole grouping. On the other hand, in the comparative example, as shown inFIG. 7 , the detailed shape of theair gap 106 in plan view has nonuniform curved portions corresponding to the respectiveoutermost holes 104 of the hole grouping. In other words, in this embodiment, the shape formed by the inner side surfaces of the supportinglayer 17 has uniform curved portions, while in the comparative example, the shape formed by the inner side surfaces of the supportinglayer 107 has nonuniform curved portions. - Therefore, in this embodiment, in which the shape formed by the inner side surfaces of the supporting
layer 17 has the uniform curved portions, stress (specifically, e.g., tensile stress or the like applied to the fixed film) is not concentrated in the part of the fixed film that is in contact with the supportinglayer 17. In contrast, in the comparative example, in which the shape formed by the inner side surfaces of the supportinglayer 107 has the nonuniform curved portions, stress is concentrated in the part of the fixed film that is in contact with the supportinglayer 107. To be specific, for example, in the part of the fixed film that is in contact with the supportinglayer 107, those parts being in contact with intersection points I107 (seeFIG. 7 ) are subjected to higher stress than the part being in contact with the other part of the supportinglayer 107. This causes concentration of stress in the parts of the fixed film that are in contact with the intersection points I107. - In this embodiment, the
outermost holes 14 of thehole grouping 14G are located at regular intervals along the shape of the opening of the throughhole 15 at the upperopen end 15 u. Consequently, the supportinglayer 17 is formed so that its inner side surfaces form a shape having uniform curved portions (in other words, the supportinglayer 17 is formed so that its inner side surfaces form a shape having uniformly spaced intersection points (the term “intersection points” as used herein means points at which curved portions meet)). This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the fixed film 13) and resulting cracks in specific locations (specifically, e.g., at specific intersection points or the like) in the part of the fixedfilm 13 that is in contact with the supportinglayer 17. - At the same time, it is also possible to prevent concentration of stress and resulting cracks in specific locations (specifically, e.g., at specific intersection points or the like) in the inner side surfaces of the supporting
layer 17, because the supportinglayer 17 is formed so that the inner side surfaces thereof form a shape having the uniform curved portions. - In addition, as set forth above, since cracks are prevented in the fixed
film 13, the fixedfilm 13 can be formed with higher tensile stress being applied thereto. This prevents the fixedfilm 13 from sticking to thediaphragm 11 in the process step of forming the air gap and the supporting layer. - Furthermore, the
holes 14 of thehole grouping 14G, which are arranged in a lattice pattern, are uniformly arranged in the fixedfilm 13, allowing an etchant to uniformly permeate parts of thesacrificial layer 12 in the process step of forming the air gap and the supporting layer. - Moreover, since the area of the opening of the through
hole 15 at the upperopen end 15 u is formed smaller than that of the opening of theair gap 16, the top surface of the part of thediaphragm 11 exposed in the throughhole 15 is entirely exposed in theair gap 16, thereby allowing the entire part of thediaphragm 11 exposed in the throughhole 15 to vibrate. - In the specific example described in this embodiment, an etchant is supplied to parts of the
sacrificial layer 12 through theholes 14 of thehole grouping 14G to remove those parts (specifically, the parts of thesacrificial layer 12 corresponding to therespective holes 14 of thehole grouping 14G are removed by a wet-etching process). However, the present invention is not limited to this. - One example of an alternative approach may be to use an etching gas, which is a mixture of a gas containing anhydrous hydrofluoric acid and a gas containing methyl alcohol, or which is a gas containing xenon difluoride, and supply the etching gas to parts of the sacrificial layer through the holes of the hole grouping to remove those parts (specifically, the parts of the sacrificial layer corresponding to the respective holes of the hole grouping may be removed by a dry-etching process). Another example of an alternative approach may be a combined use of dry etching and wet etching for removal of the parts of the sacrificial layer corresponding to the respective holes of the hole grouping.
- Furthermore, in the specific example described in this embodiment, as shown in
FIG. 4 , theoutermost holes 14 of thehole grouping 14G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 15 u, and theholes 14 of thehole grouping 14G are arranged in a lattice pattern. However, the present invention is not limited to this specific example. - One example of an alternative approach may be as follows: the holes of the hole grouping other than the outermost holes (hereinafter referred to as “inner holes of the hole grouping”) may be arranged in a lattice pattern, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Another example of an alternative approach may be as follows: the inner holes of the hole grouping may be arranged randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end. In this case, however, the inner holes are arranged so as to not to create a situation where the parts of the sacrificial layer that should be removed remain to cause a failure of proper formation of the air gap.
- Furthermore, in the specific example described in this embodiment, in order to achieve the object of the present invention effectively, the
outermost holes 14 of thehole grouping 14G are located at the same regular intervals along all six sides of the shape (i.e., the hexagonal shape) of the opening of the through hole at the upperopen end 15 u as shown inFIG. 4 . However, the present invention is not limited to this. For example, in the hole grouping, the outermost holes along each side of the hexagonal shape may be located at regular intervals specifically determined for that side. - The following describes a MEMS device according to a first modified example of the first embodiment of the present invention with reference to
FIGS. 8A to 8C , 9A and 9B, 10A and 10B, 11, and 12. - A method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention will be described below with reference to
FIGS. 8A to 10B .FIGS. 8A to 10B sequentially show process steps of the method for fabricating the MEMS device according to the first modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. To be specific, inFIGS. 8A to 10B , the plan views shown in the upper sections are as seen from above the top surface of a substrate, the cross-sectional views shown in the middle sections are taken along the lines VIIIa-VIIIa to Xb-Xb, respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate. InFIGS. 8A to 10B , the same components as those of the first embodiment shown inFIGS. 1A to 3B are identified by the same reference numerals. Thus, in this modified example, the description already provided in the first embodiment will not be repeated as appropriate in order to avoid duplication. - First, process steps shown in
FIGS. 8A to 9A are sequentially performed in the same manner as the process steps shown inFIGS. 1A to 2A in the first embodiment, thereby obtaining the configuration shown inFIG. 9A (i.e., obtaining a configuration similar to that shown inFIG. 2A in the first embodiment). - Next, as shown in
FIG. 9B , holes 24 are formed through the fixedfilm 13, each exposing the top surface of thesacrificial layer 12, thereby forming ahole grouping 24G, composed of theholes 24, in the fixedfilm 13. In this process step, thehole grouping 24G is formed in such a manner that theoutermost holes 24 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end. Thehole grouping 24G is also formed so that theholes 24 thereof are arranged in a lattice pattern. - Then, as shown in
FIG. 10A , in a manner similar to that shown inFIG. 3A in the first embodiment, a throughhole 25 is formed through thesubstrate 10 to expose the bottom surface of thediaphragm 11. In this process step, as can be seen from the plan view shown in the lower section ofFIG. 10A , the throughhole 25 is formed so that its opening has a rhombic shape at the upper and lower open ends. - Subsequently, as shown in
FIG. 10B , in a manner similar to that shown inFIG. 3B in the first embodiment, parts of thesacrificial layer 12 corresponding to therespective holes 24 of thehole grouping 24G are removed using thehole grouping 24G, thereby forming anair gap 26 in thesacrificial layer 12, and forming a supportinglayer 27 out of the remaining part of thesacrificial layer 12. - In this way, the MEMS device according to this modified example is fabricated.
- The configuration of the MEMS device according to the first modified example of the first embodiment of the present invention will be described below with reference to
FIG. 10B . - As shown in
FIG. 10B , the MEMS device according to this modified example includes: thesubstrate 10 having the throughhole 25; thediaphragm 11 provided on the top surface of thesubstrate 10 with the bottom surface of thediaphragm 11 partially exposed in the throughhole 25; the fixedfilm 13 provided over thediaphragm 11 with theair gap 26 interposed therebetween and having thehole grouping 24G composed of theholes 24 each in communication with theair gap 26; and the supportinglayer 27 interposed between thediaphragm 11 and the fixedfilm 13 and having theair gap 26 formed therein. - Now, the configuration of the
hole grouping 24G, the upper open end of the throughhole 25, theair gap 26, and the supportinglayer 27 will be discussed with reference toFIG. 11 .FIG. 11 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the first modified example of the first embodiment of the present invention. Although the number ofholes 24 in thehole grouping 24G shown inFIG. 11 differs from that inFIG. 10B , the number ofholes 24 shown in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - As shown in
FIG. 11 , the through hole with the opening having a rhombic shape at the upperopen end 25 u, the supportinglayer 27 with theair gap 26 formed therein, and thehole grouping 24G are located in that order in the direction from the bottom surface to the top surface of the substrate. - The
air gap 26 is formed using thehole grouping 24G, specifically, by removing the parts of thesacrificial layer 12 corresponding to therespective holes 24 of thehole grouping 24G. Consequently, as shown inFIG. 11 , the detailed shape of theair gap 26 in plan view is defined along theoutermost holes 24 of thehole grouping 24G, and has uniform curved portions corresponding to the respectiveoutermost holes 24. On the other hand, the general shape of theair gap 26 in plan view is rhombic as shown inFIG. 11 (see the reference numeral 26 o). - In other words, the shape formed by the inner side surfaces of the supporting
layer 27 is defined along theoutermost holes 24 of thehole grouping 24G, and has uniform curved portions corresponding to the respectiveoutermost holes 24, because the supportinglayer 27 is formed of the remaining part of thesacrificial layer 12 that has not been removed. - Furthermore, since the
air gap 26 is formed using thehole grouping 24G, the general shape of theair gap 26 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upperopen end 25 u as shown inFIG. 11 . - The
outermost holes 24 of thehole grouping 24G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 25 u (in other words, along the general shape of theair gap 26 in plan view) as shown inFIG. 11 . Also, as shown inFIG. 11 , theholes 24 of thehole grouping 24G are arranged in a lattice pattern. - As shown in
FIG. 10B , the throughhole 25 is formed so as to correspond to theair gap 26 with thediaphragm 11 interposed therebetween. The area of the opening of the through hole at the upperopen end 25 u is smaller than that of the opening of theair gap 26 as shown inFIG. 11 . Thus, the top surface of the part of thediaphragm 11 exposed in the throughhole 25 is entirely exposed in theair gap 26. - Now, the configuration of the
hole grouping 24G will be described with reference toFIG. 12 .FIG. 12 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, and the air gap in the MEMS device according to the first modified example of the first embodiment of the present invention.FIG. 12 shows the same configuration asFIG. 11 . However, inFIG. 12 , the illustration of the holes of the hole grouping other than the four adjacent holes, the detailed illustration of the air gap, and the illustration of the supporting layer are omitted for simplicity of illustration. - As shown in
FIG. 12 , when the center points of the fouradjacent holes 24 a to 24 d in thehole grouping 24G are connected, a rhombic shape is formed in the lattice. - When the shape of the opening of the through hole at the upper
open end 25 u is a rhombic shape satisfying: - the interior angle A1, A3=x°, and
- the interior angle A2, A4=180°−x°,
- then the shape formed in the lattice by connecting the center points of the four
adjacent holes 24 a to 24 d in thehole grouping 24G is a rhombic shape satisfying: - the interior angle A24 a, A24 c=x°, and
- the interior angle A24 b, A24 d=180°−x°.
- As shown in
FIG. 12 , it is assumed that first, second, third, and fourth sides of the shape of the opening of the through hole at the upperopen end 25 u extend in first-, second-, third-, and fourth-side directions D1, D2, D3, and D4, respectively. In this case, of the fouradjacent holes 24 a to 24 d, theholes holes holes holes - In this modified example, effects similar to those of the first embodiment are achievable.
- In the specific example described in this modified example, the shape of the opening of the through hole at the upper
open end 25 u is rhombic as shown inFIG. 11 , however, the present invention is not limited to this. For example, the opening of the through hole may have a quadrilateral shape, such as a rectangular or square shape, at the upper open end. - Furthermore, in the specific example described in this modified example, as shown in
FIG. 11 , theoutermost holes 24 of thehole grouping 24G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 25 u, and theholes 24 of thehole grouping 24G are arranged in a lattice pattern. However, the present invention is not limited to this. - For example, the inner holes of the hole grouping may be arranged in a lattice pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Moreover, in the specific example described in this modified example, in order to achieve the object of the present invention effectively, the
outermost holes 24 of thehole grouping 24G are located at the same regular intervals along all four sides of the shape (i.e., the rhombic shape) of the opening of the through hole at the upperopen end 25 u as shown inFIG. 11 . However, the present invention is not limited to this. For example, in the hole grouping, the outermost holes along each side of the rhombic shape may be located at regular intervals specifically determined for that side. - Also, in the specific examples described in the first embodiment and the first modified example thereof, a substrate having a rhombic shape in plan view is used as the
substrate 10. However, the present invention is not limited to this. For example, a substrate having a rectangular or square shape in plan view may also be used. - The following describes a MEMS device according to a second modified example of the first embodiment of the present invention with reference to
FIGS. 13A to 13C , 14A and 14B, 15A and 15B, and 16. - A method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention will be described below with reference to
FIGS. 13A to 15B .FIGS. 13A to 15B sequentially show process steps of the method for fabricating the MEMS device according to the second modified example of the first embodiment of the present invention, illustrating how the major components thereof are formed. To be specific, inFIGS. 13A to 15B , the plan views shown in the upper sections are as seen from above the top surface of a substrate, the cross-sectional views shown in the middle sections are taken along the lines XIIIa-XIIIa to XVb-XVb, respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate. The components in this modified example are made of the same materials as those in the first embodiment. - First, as shown in
FIG. 13A , there is provided asubstrate 30 having a (110) crystal face, and having a square shape in plan view. - Next, as shown in
FIG. 13B , adiaphragm 31, having a square shape in plan view, is formed on the top surface of thesubstrate 30. - Then, as shown in
FIG. 13C , asacrificial layer 32, having a square shape in plan view, is formed on thediaphragm 31. - Subsequently, as shown in
FIG. 14A , a fixedfilm 33, having a square shape in plan view, is formed on thesacrificial layer 32. - Then, as shown in
FIG. 14B , holes 34 are formed through the fixedfilm 33, each exposing the top surface of thesacrificial layer 32, thereby forming ahole grouping 34G, composed of theholes 34, in the fixedfilm 33. In this process step, thehole grouping 34G is formed in such a manner that theoutermost holes 34 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end. Also, in this process, thehole grouping 34G is formed so that theholes 34 thereof other than the outermost holes 34 (hereinafter referred to as “inner holes 34 of thehole grouping 34G”) are arranged in a lattice pattern. - Then, as shown in
FIG. 15A , in a manner similar to that shown inFIG. 3A in the first embodiment, a throughhole 35 is formed through thesubstrate 30 to expose the bottom surface of thediaphragm 31. In this process step, as can be seen from the plan view shown in the lower section ofFIG. 15A , the throughhole 35 is formed so that its opening has an octagonal shape at the upper and lower open ends. - Subsequently, as shown in
FIG. 15B , in a manner similar to that shown inFIG. 3B in the first embodiment, parts of thesacrificial layer 32 corresponding to therespective holes 34 of thehole grouping 34G are removed using thehole grouping 34G, thereby forming anair gap 36 in thesacrificial layer 32, and forming a supportinglayer 37 out of the remaining part of thesacrificial layer 32. - In this way, the MEMS device according to this modified example is fabricated.
- The configuration of the MEMS device according to the second modified example of the first embodiment of the present invention will be described below with reference to
FIG. 15B . - As shown in
FIG. 15B , the MEMS device according to this modified example includes: thesubstrate 30 having the throughhole 35; thediaphragm 31 provided on the top surface of thesubstrate 30 with the bottom surface of thediaphragm 31 partially exposed in the throughhole 35; the fixedfilm 33 provided over thediaphragm 31 with theair gap 36 interposed therebetween and having thehole grouping 34G composed of theholes 34 each in communication with theair gap 36; and the supportinglayer 37 interposed between thediaphragm 31 and the fixedfilm 33 and having theair gap 36 formed therein. - Now, the configuration of the
hole grouping 34G, the upper open end of the throughhole 35, theair gap 36, and the supportinglayer 37 will be discussed with reference toFIG. 16 .FIG. 16 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the second modified example of the first embodiment of the present invention. Although the number ofholes 34 in thehole grouping 34G shown inFIG. 16 differs from that inFIG. 15B , the number ofholes 34 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - As shown in
FIG. 16 , the through hole with the opening having an octagonal shape at the upperopen end 35 u, the supportinglayer 37 with theair gap 36 formed therein, and thehole grouping 34G are located in that order in the direction from the bottom surface to the top surface of the substrate. - The
air gap 36 is formed using thehole grouping 34G, specifically, by removing the parts of thesacrificial layer 32 corresponding to therespective holes 34 of thehole grouping 34G. Consequently, as shown inFIG. 16 , the detailed shape of theair gap 36 in plan view is defined along theoutermost holes 34 of thehole grouping 34G, and thus has uniform curved portions corresponding to the respectiveoutermost holes 34. On the other hand, the general shape of theair gap 36 in plan view is octagonal as shown inFIG. 16 (see the reference numeral 36 o). - In other words, the shape formed by the inner side surfaces of the supporting
layer 37 is defined along theoutermost holes 34 of thehole grouping 34G, and has uniform curved portions corresponding to the respectiveoutermost holes 34, because the supportinglayer 37 is formed of the remaining part of thesacrificial layer 32 that has not been removed. - Furthermore, since the
air gap 36 is formed using thehole grouping 34G, the general shape of theair gap 36 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upperopen end 35 u as shown inFIG. 16 . - The
outermost holes 34 of thehole grouping 34G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 35 u (in other words, along the general shape of theair gap 36 in plan view) as shown inFIG. 16 . Also, as shown inFIG. 16 , theinner holes 34 of thehole grouping 34G (i.e., theholes 34 of thehole grouping 34G other than the outermost holes 34) are arranged in a lattice pattern. When the center points of four adjacent holes of theinner holes 34 are connected, a rhombic shape (or a square shape) is formed in the lattice. - As shown in
FIG. 15B , the throughhole 35 is formed so as to correspond to theair gap 36 with thediaphragm 31 interposed therebetween. The area of the opening of the through hole at the upperopen end 35 u is smaller than that of the opening of theair gap 36 as shown inFIG. 16 . Thus, the top surface of the part of thediaphragm 31 exposed in the throughhole 35 is entirely exposed in theair gap 36. - In this modified example, effects similar to those of the first embodiment are achievable.
- In the specific example described in this modified example, as shown in
FIG. 16 , theoutermost holes 34 of thehole grouping 34G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 35 u, and theinner holes 34 are arranged in a lattice pattern. However, the present invention is not limited to this. - One example of an alternative approach may be as follows: the holes of the hole grouping may be arranged in a lattice pattern, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Another example of an alternative approach may be as follows: the inner holes of the hole grouping may be arranged randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Furthermore, in the specific example described in this modified example, in order to achieve the object of the present invention effectively, the
outermost holes 34 of thehole grouping 34G are located at the same regular intervals along all eight sides of the shape (i.e., the octagonal shape) of the opening of the through hole at the upperopen end 35 u as shown inFIG. 16 . However, the present invention is not limited to this. For example, in the hole grouping, the outermost holes along each side of the octagonal shape may be located at regular intervals specifically determined for that side. - Also, in the specific example described in this modified example, a substrate having a square shape in plan view is used as the
substrate 30. However, the present invention is not limited to this. For example, a substrate having a rectangular, rhombic, or some other shape in plan view may also be used. - The following describes a MEMS device according to a second embodiment of the present invention with reference to
FIGS. 17A to 17C , 18A and 18B, 19A and 19B, and 20. - A method for fabricating the MEMS device according to the second embodiment of the present invention will be described below with reference to
FIGS. 17A to 19B .FIGS. 17A to 19B sequentially show process steps of the method for fabricating the MEMS device according to the second embodiment of the present invention, illustrating how the major components thereof are formed. To be specific, inFIGS. 17A to 19B , the plan views shown in the upper sections are as seen from the top surface of a substrate, the cross-sectional views shown in the middle sections are taken along the lines XVIIa-XVIIa to XIXb-XIXb, respectively, and the plan views shown in the lower sections are as seen from the bottom surface of the substrate. InFIGS. 17A to 19B , the same components as those of the second modified example of the first embodiment shown inFIGS. 13A to 15B are identified by the same reference numerals. Thus, in this embodiment, the description already provided in the second modified example of the first embodiment will not be repeated as appropriate in order to avoid duplication. - First, process steps shown in
FIGS. 17A to 18A are sequentially performed in the same manner as the process steps shown inFIGS. 13A to 14A in the second modified example of the first embodiment, thereby obtaining the configuration shown inFIG. 18A (i.e., obtaining a configuration similar to that shown inFIG. 14A in the second modified example of the first embodiment). - Next, as shown in
FIG. 18B , holes 44 are formed through the fixedfilm 33, each exposing the top surface of thesacrificial layer 32, thereby forming ahole grouping 44G, composed of theholes 44, in the fixedfilm 33. In this process step, thehole grouping 44G is formed in such a manner that theoutermost holes 44 thereof are located at regular intervals along the shape of the opening of a through hole (which is to be formed in a subsequent process step) at the upper open end. Thehole grouping 44G is also formed so that theholes 44 thereof other than the outermost holes 44 (hereinafter referred to as “inner holes 44 of thehole grouping 44G”) are arranged in a lattice pattern. - Then, as shown in
FIG. 19A , in a manner similar to that shown inFIG. 3A in the first embodiment, a throughhole 45 is formed through thesubstrate 30 to expose the bottom surface of thediaphragm 31. In this process step, as can be seen from the plan view shown in the lower section ofFIG. 19A , the throughhole 45 is formed so that the opening thereof has a circular shape at the upper and lower open ends. - Subsequently, as shown in
FIG. 19B , in a manner similar to that shown inFIG. 3B in the first embodiment, parts of thesacrificial layer 32 corresponding to therespective holes 44 of thehole grouping 44G are removed using thehole grouping 44G, thereby forming anair gap 46 in thesacrificial layer 32, and forming a supportinglayer 47 out of the remaining part of thesacrificial layer 32. - In this way, the MEMS device according to this embodiment is fabricated.
- The configuration of the MEMS device according to the second embodiment of the present invention will be described below with reference to
FIG. 19B . - As shown in
FIG. 19B , the MEMS device according to this embodiment includes: thesubstrate 30 having the throughhole 45; thediaphragm 31 provided on the top surface of thesubstrate 30 with the bottom surface of thediaphragm 31 partially exposed in the throughhole 45; the fixedfilm 33 provided over thediaphragm 31 with theair gap 46 interposed therebetween and having thehole grouping 44G composed of theholes 44 each in communication with theair gap 46; and the supportinglayer 47 interposed between thediaphragm 31 and the fixedfilm 33 and having theair gap 46 formed therein. - Now, the configuration of the
hole grouping 44G, the upper open end of the throughhole 45, theair gap 46, and the supportinglayer 47 will be discussed with reference toFIG. 20 .FIG. 20 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the second embodiment of the present invention. Although the number ofholes 44 in thehole grouping 44G shown inFIG. 20 differs from that inFIG. 19B , the number ofholes 44 in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - As shown in
FIG. 20 , the through hole with the opening having a circular shape at the upperopen end 45 u, the supportinglayer 47 with theair gap 46 formed therein, and thehole grouping 44G are located in that order in the direction from the bottom surface to the top surface of the substrate. - The
air gap 46 is formed using thehole grouping 44G, specifically, by removing the parts of thesacrificial layer 32 corresponding to therespective holes 44 of thehole grouping 44G. Hence, as shown inFIG. 20 , the detailed shape of theair gap 46 in plan view is defined along theoutermost holes 44 of thehole grouping 44G, and has uniform curved portions corresponding to the respectiveoutermost holes 44. On the other hand, the general shape of theair gap 46 in plan view is circular as shown inFIG. 20 (see the reference numeral 46 o). - In other words, the shape formed by the inner side surfaces of the supporting
layer 47 is defined along theoutermost holes 44 of thehole grouping 44G, and has uniform curved portions corresponding to the respectiveoutermost holes 44, because the supportinglayer 47 is formed of the remaining part of thesacrificial layer 32 that has not been removed. - Furthermore, since the
air gap 46 is formed using thehole grouping 44G, the general shape of theair gap 46 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upperopen end 45 u as shown inFIG. 20 . - The
outermost holes 44 of thehole grouping 44G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 45 u (in other words, along the general shape of theair gap 46 in plan view) as shown inFIG. 20 . Also, as shown inFIG. 20 , theinner holes 44 of thehole grouping 44G (i.e., theholes 44 of thehole grouping 44G other than the outermost holes 44) are arranged in a lattice pattern. When the center points of four adjacent holes of theinner holes 44 are connected, a rhombic shape (or a square shape) is formed in the lattice. - As shown in
FIG. 19B , the throughhole 45 is formed so as to correspond to theair gap 46 with thediaphragm 31 interposed therebetween. As shown inFIG. 20 , the area of the opening of the through hole at the upperopen end 45 u is smaller than that of the opening of theair gap 46. Thus, the top surface of the part of thediaphragm 31 that is exposed in the throughhole 45 is entirely exposed in theair gap 46. - In this embodiment, the
outermost holes 44 of thehole grouping 44G are located at regular intervals along the shape of the opening of the throughhole 45 at the upperopen end 45 u. Thus, the supportinglayer 47 is formed so that its inner side surfaces form a shape having uniform curved portions (in other words, the supportinglayer 47 is formed so that its inner side surfaces form a shape having uniformly spaced intersection points). This prevents concentration of stress (specifically, e.g., tensile stress or the like applied to the fixed film 33) and resulting cracks in specific locations (specifically, e.g., at specific intersection points or the like) in the part of the fixedfilm 33 that is in contact with the supportinglayer 47. - At the same time, it is also possible to prevent concentration of stress and resulting cracks in specific locations (specifically, e.g., at specific intersection points or the like) in the inner side surfaces of the supporting
layer 47, because the supportinglayer 47 is formed so that its inner side surfaces form a shape having the uniform curved portions. - In addition, as set forth above, since cracks are prevented in the fixed
film 33, the fixedfilm 33 can be formed with higher tensile stress being applied thereto. This prevents the fixedfilm 33 from sticking to thediaphragm 31 in the process step of forming the air gap and the supporting layer. - Furthermore, the
inner holes 44 of thehole grouping 44G, which are arranged in a lattice pattern, are arranged uniformly in the fixedfilm 33, thereby allowing an etchant to uniformly permeate parts of thesacrificial layer 32 in the process step of forming the air gap and the supporting layer. - Moreover, since the area of the opening of the through
hole 45 at the upperopen end 45 u is formed smaller than that of the opening of theair gap 46, the top surface of the part of thediaphragm 31 exposed in the throughhole 45 is entirely exposed in theair gap 46, enabling the entire part of thediaphragm 31 exposed in the throughhole 45 to vibrate. - In the specific example described in this embodiment, as shown in
FIG. 20 , theoutermost holes 44 of thehole grouping 44G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 45 u, and theinner holes 44 are arranged in a lattice pattern. However, the present invention is not limited to this. - For example, the inner holes of the hole grouping may be arranged in a concentric circle pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- The following describes a MEMS device according to a modified example of the second embodiment of the present invention with reference to
FIGS. 21 and 22 . - The configuration of the MEMS device according to the modified example of the second embodiment of the present invention will be described below with reference to
FIG. 21 .FIG. 21 illustrates the configuration of the MEMS device according to the modified example of the second embodiment of the present invention. To be specific, inFIG. 21 , the plan view shown in the upper section is as seen from above the top surface of a substrate, the cross-sectional view shown in the middle section is taken along the line XXI-XXI, and the plan view shown in the lower section is as seen from the bottom surface of the substrate. InFIG. 21 , the same components as those of the second embodiment shown inFIG. 19B are identified by the same reference numerals. Thus, in this modified example, the description already provided in the second embodiment will not be repeated as appropriate in order to avoid duplication. - As shown in
FIG. 21 , the MEMS device according to this modified example includes: asubstrate 30 having a throughhole 55; adiaphragm 31 provided on the top surface of thesubstrate 30 with the bottom surface of thediaphragm 31 partially exposed in the throughhole 55; a fixedfilm 33 provided over thediaphragm 31 with anair gap 56 interposed therebetween and having ahole grouping 54G composed ofholes 54 each in communication with theair gap 56; and a supportinglayer 57 interposed between thediaphragm 31 and the fixedfilm 33 and having theair gap 56 formed therein. - Now, the configuration of the
hole grouping 54G, the upper open end of the throughhole 55, theair gap 56, and the supportinglayer 57 will be discussed with reference toFIG. 22 .FIG. 22 is a plan view illustrating the configuration of the hole grouping, the upper open end of the through hole, the air gap, and the supporting layer in the MEMS device according to the modified example of the second embodiment of the present invention. Although the number ofholes 54 in thehole grouping 54G shown inFIG. 22 differs from that inFIG. 21 , the number ofholes 54 shown in each figure is provided only as an optimum number for simplicity of illustration, and differs from the actual number. - As shown in
FIG. 22 , the through hole with an opening having an elliptical shape at the upperopen end 55 u, the supportinglayer 57 with theair gap 56 formed therein, and thehole grouping 54G are located in that order in the direction from the bottom surface to the top surface of the substrate. - The detailed shape of the
air gap 56 in plan view is defined along theoutermost holes 54 of thehole grouping 54G, and has uniform curved portions corresponding to the respectiveoutermost holes 54 as shown inFIG. 22 . On the other hand, the general shape of theair gap 56 in plan view is elliptical as shown inFIG. 22 (see the reference numeral 56 o). - The shape formed by the inner side surfaces of the supporting
layer 57 is defined along theoutermost holes 54 of thehole grouping 54G, and has uniform curved portions corresponding to the respectiveoutermost holes 54. - As shown in
FIG. 22 , the general shape of theair gap 56 in plan view is similar to, but larger than, the shape of the opening of the through hole at the upperopen end 55 u. - The
outermost holes 54 of thehole grouping 54G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 55 u (in other words, along the general shape of theair gap 56 in plan view) as shown inFIG. 22 . Also, as shown inFIG. 22 , theinner holes 54 of thehole grouping 54G (i.e., theholes 54 of thehole grouping 54G other than the outermost holes 54) are arranged in a lattice pattern. When the center points of four adjacent holes of theinner holes 54 are connected, a rhombic shape (or a square shape) is formed in the lattice. - As shown in
FIG. 21 , the throughhole 55 is formed so as to correspond to theair gap 56 with thediaphragm 31 interposed therebetween. As shown inFIG. 22 , the area of the opening of the through hole at the upperopen end 55 u is smaller than that of the opening of theair gap 56. Thus, the top surface of the part of thediaphragm 31 exposed in the throughhole 55 is entirely exposed in theair gap 56. - In this modified example, effects similar to those of the second embodiment are achievable.
- In the specific example described in this modified example, as shown in
FIG. 22 , theoutermost holes 54 of thehole grouping 54G are located at regular intervals along the shape of the opening of the through hole at the upperopen end 55 u, and theinner holes 54 are arranged in a lattice pattern. However, the present invention is not limited to this. - For example, the inner holes of the hole grouping may be arranged in a concentric ellipse pattern or randomly, while the outermost holes are located at regular intervals along the shape of the opening of the through hole at the upper open end.
- Also, in the specific examples described in the second embodiment and the modified example thereof, a substrate having a square shape in plan view is used as the
substrate 30. However, the present invention is not limited to this. For example, a substrate having a rectangular, rhombic, or some other shape in plan view may also be used. - Moreover, in the specific examples described in the first embodiment and the first and second modified examples thereof and in the second embodiment and the modified example thereof, the
diaphragm substrate - As set forth above, the present invention, capable of preventing cracks in fixed films, is applicable to MEMS devices including fixed films and methods for fabricating the same.
Claims (10)
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