US20120073871A1 - Multi-layered substrate - Google Patents
Multi-layered substrate Download PDFInfo
- Publication number
- US20120073871A1 US20120073871A1 US13/307,996 US201113307996A US2012073871A1 US 20120073871 A1 US20120073871 A1 US 20120073871A1 US 201113307996 A US201113307996 A US 201113307996A US 2012073871 A1 US2012073871 A1 US 2012073871A1
- Authority
- US
- United States
- Prior art keywords
- layer
- patterned
- hole
- base
- sided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0097—Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1536—Temporarily stacked PCBs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
Definitions
- the present invention relates to a chip package structure and a fabricating method thereof. More particularly, the present invention relates to a multi-layered substrate.
- the board on chip (BOC) packaging concept which uses a board substrate mounted above the silicon chip(s) as the lead-on-chip (LOC) technology, has been developed for high frequency applications.
- the BOC substrates or certain window ball grid array (BGA) substrates are essentially single-sided substrates i.e. circuit patterns and fiducials are only located on one side of the substrates.
- BGA window ball grid array
- the present invention is directed to a fabrication method of a multi-layered substrate, which is capable of doubling the productivity or yield and is compatible with the present manufacturing processes.
- the present invention is also directed to a fabrication method of fabricating a multi-layered substrate structure, which can provide single-sided or double-sided substrate structure.
- the present invention directs to a method of fabricating a multi-layered substrate by providing a double-sided lamination structure having at least a core structure and first and second laminate structures stacked over both surfaces of the core structure.
- the core structure functions as the temporary carrier for carrying the first and second laminate structures through the double-sided processing procedures.
- the laminate structure can be either a single-clad laminate having a metal layer at one side or a double-clad laminate having two metal layers respectively at both sides.
- first and second laminate structures are single-clad laminates
- first and second laminate structures are single-clad laminates
- single-sided substrates are obtained by separating the first and second laminate structures from the core structure.
- first and second laminate structures are double-clad laminates
- the first and second laminate structures are separated from the core structure, turned inversely and re-laminated to a carrier for further processing.
- the metal layer at the other side of the first/second laminate structure can be either removed or further patterned to provide single-sided substrates or double-sided substrates.
- the fabrication method may further comprise forming a plurality of plated-through holes in the double-sided lamination structure by drilling and plating.
- the fabrication method may further comprise performing a surface plating process to form a Ni/Au layer located on the metal layer that is not covered by the mask layer.
- the present invention further provides a multi-layered substrate structure.
- the substrate structure includes a base having a top surface, a bottom surface, and at least a through-hole passing through the base, patterned first and second metal layers formed respectively on the bottom surface and the top surface of the base, a first plating layer covering a sidewall of the through-hole and the bottom surface surrounding a bottom opening of the through hole, and a second plating layer covering the first plating layer and the top surface surrounding the top opening of the through hole.
- the multi-layered substrate structure has the plated-through holes with double plating layers, which reinforces the plated-through holes for better electrical performances.
- FIG. 1 is flow chart of process steps for fabricating a substrate according to an embodiment of the present invention.
- FIGS. 2A-2G are cross-sectional views showing the substrate according to the fabricating process steps of an embodiment in the present invention.
- FIG. 3 is flow chart of process steps for fabricating a multi-layered substrate according to another embodiment of the present invention.
- FIGS. 4A-4G are cross-sectional views showing the multi-layered substrate according to the fabricating process steps of another embodiment in the present invention.
- FIG. 5 shows a cross-sectional view of an example of the double-sided substrate structure of the present invention.
- first”, “second” and the like are used in the present invention to describe each element, region, layer, and/or part, such words are not intended to restrict the element, the region, the layer, and/or the part, but shall be considered to distinguish one element, region, layer, or part from another. Therefore, under the circumstance of without departing from the teaching of the present invention, the first element, region, layer, or part can also be called the second element, region, layer, or part.
- FIG. 1 is flow chart of process steps for fabricating a substrate according to an embodiment of the present invention.
- FIGS. 2A-2G are cross-sectional views showing the substrate according to the fabricating process steps of an embodiment in the present invention.
- a double-sided lamination structure 100 which has a first metal layer 106 a and a first passivation or dielectric layer 104 a disposed on a top surface 102 a of the core structure 102 and a second metal layer 106 b and a second passivation layer 104 b disposed on a bottom surface 102 b of the core structure 102 .
- the material of the first and the second metal layers 106 a , 106 b may be copper formed by electroplating or copper foil lamination, for example.
- the first and second passivation layers may be formed from the same or different resin materials, for example.
- the core structure 102 may be a release film or a peelable mask film, for example.
- the release film may be made of a Teflon-based material (such as Tedlar® film), and has very limited adhesion toward the passivation layer. If the release film is used, adhesive resin may be applied on the corners or the borders of the release film for enhancing the adhesion. If the peelable mask film is employed, the peelable mask film should achieve sufficient adhesion with the passivation layer during processing and remain peelable at the end of processing. For example, the peelable mask film can be applied on the borders (shaped as the picture frame) of the passivation layers.
- a drilling process is performed by, for example, mechanical drilling or laser drilling to form through holes passing through the double-sided lamination structure 100 .
- an optional plating process is performed to electroplate the sidewalls of the through holes so as to form plated-through holes 108 .
- the plating step may also be used to reinforce the Cu foil only.
- Step 14 & FIG. 2C after first and second patterned photoresist layers 110 a , 110 b are respectively formed on the first and second metal layers 106 a , 106 b , the first and second metal layers 106 a , 106 b are patterned, using the first and second patterned photoresist layers 110 a , 110 b as the etching masks.
- first and second mask layers 112 a , 112 b are respectively formed on the first and second passivation layers 104 a , 104 b and partially covering the first and second metal layers 106 a , 106 b .
- the first and second mask layers may be solder mask layers, for example.
- Step 18 & FIG. 2E a surface plating process is performed to form a nickel/gold layer 114 a/b on the exposed surfaces of the first and second metal layers 106 a , 106 b respectively.
- a punching/routing process may be performed to cut bond channels into the substrates to form a BOC type substrate.
- the strips may be cut from the panel or the border frame of the double-sided lamination structure 100 may be cut off
- Step 22 & FIG. 2G a separating process is performed to the double-sided lamination structure 100 , so that two single-sided substrate structures 120 a , 120 b are obtained.
- the first single-sided substrate structure 120 a including the first passivation layer 104 a , the patterned first metal layer 106 a , the first mask layer 112 a and the first nickel/gold layer 114 a , is detached from the top surface 102 a and separated from the core structure 102 .
- the second single-sided substrate structure 120 b including the second passivation layer 104 b , the patterned second metal layer 106 b , the second mask layer 112 b and the second nickel/gold layer 114 b , is detached from the bottom surface 102 b and separated from the core structure 102 . If strips were punched/routed out of the panel, then the separating process forms individual strips. If only the border was cut off, then individual panels are formed which need to be cut into strips in a later process step.
- metal layers and passivation layers can be stacked on both surfaces of the temporary carrier as the double-sided lamination structure, and both sides of the lamination structure can be processed and then separated to provide single-sided substrates.
- the single-sided substrates are detached from the temporary carrier, the bottom surface or the blank backside of the single-sided substrates is protected by the temporary carrier and turns out to be a pretty smooth surface, having a roughness R z ⁇ 5 um, for example. That is, the bottom surface or the blank backside of the single-sided substrates is significantly smoother than the conventional backside where copper has been etched or polished.
- FIG. 3 is flow chart of process steps for fabricating a multi-layered substrate according to another embodiment of the present invention.
- FIGS. 4A-4G are cross-sectional views showing the multi-layered substrate according to the fabricating process steps of another embodiment in the present invention.
- a double-sided lamination structure 300 which has a first laminate structure 310 a disposed on a top surface 302 a of the core structure 302 and a second laminate structure 310 b disposed on a bottom surface 302 b of the core 302 structure.
- the first laminate structure 310 a includes a first metal layer 306 a , a second metal layer 308 a and a first passivation layer 304 a sandwiched there-between
- the second laminate structure 310 b includes a third metal layer 306 b , a fourth metal layer 308 b and a second passivation layer 304 b sandwiched there-between.
- the first and second laminate structures 310 a , 310 b may be copper clad laminates (CCL), and the material of the metal layers may be copper formed by electroplating or copper foil lamination, for example.
- the first and second passivation layers 304 a , 304 b may be formed from the same or different resin materials, for example.
- the core structure 302 may be a release film or a peelable mask film, for example.
- the double-sided lamination structure 300 can be formed by joining the core structure 302 with two laminate structures 310 a , 31% in sequence or simultaneously, for example.
- the release film may be made of a Teflon-based material (such as Tedlar® film), and has very limited adhesion toward the passivation layer or the metal layer. If the release film is employed as the core structure 302 , adhesive resin may be applied on the corners or the borders of the release film for enhancing the adhesion. If the peelable mask film is employed as the core structure 302 , it is preferred to choose the size or the shape of the peelable mask film for achieving sufficient adhesion and remaining peelable at the end of processing. For example, the peelable mask film can be applied on the borders (shaped as the picture frame) of one or both of the laminate structures 310 a , 310 b.
- the core structure 302 ′ of the lamination structure 300 ′ is an aluminum layer and the lamination structure 300 ′ can be formed by laminating and pressing the metal layers and the passivation layers to both surfaces of the aluminum layer sequentially or simultaneously, for example.
- Such lamination structure 300 ′ can be obtained through direct lamination or be commercially available.
- adhesive resin is usually applied on the borders (shaped as the picture frame) of one or both of the laminate structures 310 a , 310 b.
- Step 32 & FIG. 4B a drilling process and a plating process are performed to form plated-through holes 310 passing through the double-sided lamination structure 300 ( 300 ′).
- Step 34 & FIG. 4C after first and second patterned photoresist layers 312 a , 312 b are respectively formed on the second and fourth metal layers 308 a , 308 b , the second and fourth metal layers 308 a , 308 b are patterned, using the first and second patterned photoresist layers 312 a , 312 b as the etching masks.
- first and second mask layers 314 a , 314 b are respectively formed on the first and second passivation layers 304 a , 304 b and partially covering the second and fourth metal layers 308 a , 308 b .
- the first and second mask layers may be solder mask layers, for example.
- Step 38 & FIG. 4E a surface plating process is performed to form a nickel/gold layer 316 a/b on the exposed surfaces of the second and fourth metal layers 308 a , 308 b respectively.
- a protective layer (not shown) may be further formed over both surfaces of the double-sided lamination structure 300 ( 300 ′).
- Step 40 a punching/routing process may be optionally performed to cut off the border frame of the double-sided lamination structure 300 ( 300 ′).
- the first and second laminate structures 310 a , 310 b are detached from the top and bottom surfaces 302 a , 302 b of the core structure 302 ( 302 ′).
- the lamination structure 300 as the border frame is punched off, it is easy to separate the first and second laminate structures 310 a , 310 b from the core structure 302 by peeling with or without using an exatco knife blade, for example.
- the laminate structures 310 a , 310 b can be straightforwardly peeled apart.
- the separating process may require more force by using radius drums to peel the laminate structures 310 a , 310 b from the aluminum layer.
- the first and second laminate structures 310 a , 310 b are re-laminated together.
- the first and second laminate structures 310 a , 310 b are laminated to a carrier film 320 , the first and third metal layers 306 a , 306 b of the first and second laminate structures 310 a , 310 b become the external layers (i.e. face the outside).
- the carrier film 320 can be a peelable film, for example.
- the obtained first and second laminate structures 310 a , 310 b can be further processed to remove the first and third metal layers 306 a , 306 b .
- PTH plating may be optional.
- the first and third metal layers 306 a , 306 b of the obtained first and second laminate structures 310 a , 310 b can be further processed following the above described Steps 32 - 42 .
- FIG. 5 shows a cross-sectional view of an example of the double-sided substrate structure of the present invention.
- the double-sided substrate structure 500 includes two patterned metal layers 506 , 508 respectively disposed on both surfaces of the base 504 and mask layers 505 , 507 over the patterned metal layers 506 , 508 .
- the resultant plated-through hole 510 has a first plating layer 512 a covering the sidewall of the through hole and the surface surrounding the bottom opening of the through hole and a second plating layer 512 b covering the first plating layer and the surface surrounding the top opening of the through hole. It can reinforce the corners of the plated-through holes and increase the total thickness of the plating layers.
- the material of the first and second plating layer can be copper or copper alloys, for example.
- copper clad laminates can be stacked on both surfaces of the aluminum carrier, the release film, or the peelable mask film as the lamination structure, and the lamination structure can be processed and separated to provide pseudo single-sided substrates.
- the pseudo single-sided substrates can be re-laminated and processed (the other side) to provide single-sided or double-sided substrates.
- the fabrication process of the present invention can efficiently provide single-sided substrates or double-sided substrates based on the currently standard two-layer manufacturing technology. Furthermore, the productivity can be practically doubled without wasting the processing materials or the production line.
Abstract
The present invention directs to double-sided multi-layered substrate a base, at least a through-hole passing through the base, patterned first and second metal layers formed on the two opposite surfaces of the base, and first and second plating layers. The first plating layer covers a sidewall of the through-hole and the bottom surface surrounding a bottom opening of the through hole. The second plating layer covers the first plating layer and the top surface surrounding a top opening of the through hole.
Description
- This application is a divisional of and claims the priority benefit of an application Ser. No. 12/199,149, filed on Aug. 27, 2008. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
- 1. Field of the Invention
- The present invention relates to a chip package structure and a fabricating method thereof. More particularly, the present invention relates to a multi-layered substrate.
- 2. Description of Related Art
- The board on chip (BOC) packaging concept, which uses a board substrate mounted above the silicon chip(s) as the lead-on-chip (LOC) technology, has been developed for high frequency applications. The BOC substrates or certain window ball grid array (BGA) substrates are essentially single-sided substrates i.e. circuit patterns and fiducials are only located on one side of the substrates. At present, rather wasteful approaches are employed to fabricate these single-sided substrates, as the dummy side of the substrates went through the similar processing steps and then removed. Therefore, not only the raw materials and processing chemicals are wasted but also the efforts spent on the dummy side become futile.
- It is desirable to develop suitable manufacturing procedure for such substrate using the present manufacturing line.
- Accordingly, the present invention is directed to a fabrication method of a multi-layered substrate, which is capable of doubling the productivity or yield and is compatible with the present manufacturing processes.
- The present invention is also directed to a fabrication method of fabricating a multi-layered substrate structure, which can provide single-sided or double-sided substrate structure.
- As embodied and broadly described herein, the present invention directs to a method of fabricating a multi-layered substrate by providing a double-sided lamination structure having at least a core structure and first and second laminate structures stacked over both surfaces of the core structure. The core structure functions as the temporary carrier for carrying the first and second laminate structures through the double-sided processing procedures.
- The laminate structure can be either a single-clad laminate having a metal layer at one side or a double-clad laminate having two metal layers respectively at both sides.
- As embodied and broadly described herein, when the first and second laminate structures are single-clad laminates, after the two outermost metal layers of the double-sided lamination structure are patterned and protected with mask layers, single-sided substrates are obtained by separating the first and second laminate structures from the core structure.
- As embodied and broadly described herein, when the first and second laminate structures are double-clad laminates, after the two outermost metal layers of the double-sided lamination structure are patterned and protected with mask layers, the first and second laminate structures are separated from the core structure, turned inversely and re-laminated to a carrier for further processing. The metal layer at the other side of the first/second laminate structure can be either removed or further patterned to provide single-sided substrates or double-sided substrates.
- In an embodiment of the present invention, the fabrication method may further comprise forming a plurality of plated-through holes in the double-sided lamination structure by drilling and plating.
- In an embodiment of the present invention, the fabrication method may further comprise performing a surface plating process to form a Ni/Au layer located on the metal layer that is not covered by the mask layer.
- The present invention further provides a multi-layered substrate structure. The substrate structure includes a base having a top surface, a bottom surface, and at least a through-hole passing through the base, patterned first and second metal layers formed respectively on the bottom surface and the top surface of the base, a first plating layer covering a sidewall of the through-hole and the bottom surface surrounding a bottom opening of the through hole, and a second plating layer covering the first plating layer and the top surface surrounding the top opening of the through hole.
- In the present invention, the multi-layered substrate structure has the plated-through holes with double plating layers, which reinforces the plated-through holes for better electrical performances.
- In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
-
FIG. 1 is flow chart of process steps for fabricating a substrate according to an embodiment of the present invention. -
FIGS. 2A-2G are cross-sectional views showing the substrate according to the fabricating process steps of an embodiment in the present invention. -
FIG. 3 is flow chart of process steps for fabricating a multi-layered substrate according to another embodiment of the present invention. -
FIGS. 4A-4G are cross-sectional views showing the multi-layered substrate according to the fabricating process steps of another embodiment in the present invention. -
FIG. 5 shows a cross-sectional view of an example of the double-sided substrate structure of the present invention. - The present invention is described below in detail with reference to the accompanying drawings, and the embodiments of the present invention are shown in the accompanying drawings. However, the present invention can also be implemented in a plurality of different forms, so it should not be interpreted as being limited in the following embodiments. Actually, the following embodiments are intended to demonstrate and illustrate the present invention in a more detailed and completed way, and to fully convey the scope of the present invention to those of ordinary skill in the art. In the accompanying drawings, in order to be specific, the size and relative size of each layer and each region may be exaggeratedly depicted.
- It should be known that although “first”, “second” and the like are used in the present invention to describe each element, region, layer, and/or part, such words are not intended to restrict the element, the region, the layer, and/or the part, but shall be considered to distinguish one element, region, layer, or part from another. Therefore, under the circumstance of without departing from the teaching of the present invention, the first element, region, layer, or part can also be called the second element, region, layer, or part.
- In addition, “under”, “on”, and similar words for indicating the relative space position are used in the present invention to illustrate the relationship between a certain element or feature and another element or feature in the drawings. It should be known that, beside those relative space words for indicating the directions depicted in the drawings, if the element in the drawing is inverted, the element described as “under” another element or feature becomes “on” another element or feature.
-
FIG. 1 is flow chart of process steps for fabricating a substrate according to an embodiment of the present invention.FIGS. 2A-2G are cross-sectional views showing the substrate according to the fabricating process steps of an embodiment in the present invention. - Firstly, in
Step 10 &FIG. 2A , a double-sided lamination structure 100 is provided, which has afirst metal layer 106 a and a first passivation ordielectric layer 104 a disposed on atop surface 102 a of thecore structure 102 and asecond metal layer 106 b and asecond passivation layer 104 b disposed on abottom surface 102 b of thecore structure 102. The material of the first and thesecond metal layers core structure 102 may be a release film or a peelable mask film, for example. The release film may be made of a Teflon-based material (such as Tedlar® film), and has very limited adhesion toward the passivation layer. If the release film is used, adhesive resin may be applied on the corners or the borders of the release film for enhancing the adhesion. If the peelable mask film is employed, the peelable mask film should achieve sufficient adhesion with the passivation layer during processing and remain peelable at the end of processing. For example, the peelable mask film can be applied on the borders (shaped as the picture frame) of the passivation layers. - In
Step 12 &FIG. 2B , a drilling process is performed by, for example, mechanical drilling or laser drilling to form through holes passing through the double-sidedlamination structure 100. Then, an optional plating process is performed to electroplate the sidewalls of the through holes so as to form plated-throughholes 108. The plating step may also be used to reinforce the Cu foil only. - In
Step 14 &FIG. 2C , after first and second patterned photoresist layers 110 a, 110 b are respectively formed on the first andsecond metal layers second metal layers - In
Step 16 &FIG. 2D , after removing the remained first and second patterned photoresist layers 110 a, 110 b, first and second mask layers 112 a, 112 b are respectively formed on the first and second passivation layers 104 a, 104 b and partially covering the first andsecond metal layers - In
Step 18 &FIG. 2E , a surface plating process is performed to form a nickel/gold layer 114 a/b on the exposed surfaces of the first andsecond metal layers - In
Step 20 &FIG. 2F , a punching/routing process may be performed to cut bond channels into the substrates to form a BOC type substrate. In the same pass or in a separate punching/routing pass, the strips may be cut from the panel or the border frame of the double-sided lamination structure 100 may be cut off - In
Step 22 &FIG. 2G a separating process is performed to the double-sided lamination structure 100, so that two single-sided substrate structures sided substrate structure 120 a, including thefirst passivation layer 104 a, the patternedfirst metal layer 106 a, thefirst mask layer 112 a and the first nickel/gold layer 114 a, is detached from thetop surface 102 a and separated from thecore structure 102. Similarly, the second single-sided substrate structure 120 b, including thesecond passivation layer 104 b, the patternedsecond metal layer 106 b, thesecond mask layer 112 b and the second nickel/gold layer 114 b, is detached from thebottom surface 102 b and separated from thecore structure 102. If strips were punched/routed out of the panel, then the separating process forms individual strips. If only the border was cut off, then individual panels are formed which need to be cut into strips in a later process step. - According to the fabrication process of the present invention, metal layers and passivation layers can be stacked on both surfaces of the temporary carrier as the double-sided lamination structure, and both sides of the lamination structure can be processed and then separated to provide single-sided substrates. As the single-sided substrates are detached from the temporary carrier, the bottom surface or the blank backside of the single-sided substrates is protected by the temporary carrier and turns out to be a pretty smooth surface, having a roughness Rz≦5 um, for example. That is, the bottom surface or the blank backside of the single-sided substrates is significantly smoother than the conventional backside where copper has been etched or polished.
-
FIG. 3 is flow chart of process steps for fabricating a multi-layered substrate according to another embodiment of the present invention.FIGS. 4A-4G are cross-sectional views showing the multi-layered substrate according to the fabricating process steps of another embodiment in the present invention. - Firstly, in
Step 30 &FIG. 4A , a double-sided lamination structure 300 is provided, which has afirst laminate structure 310 a disposed on atop surface 302 a of thecore structure 302 and asecond laminate structure 310 b disposed on abottom surface 302 b of the core 302 structure. Thefirst laminate structure 310 a includes afirst metal layer 306 a, asecond metal layer 308 a and afirst passivation layer 304 a sandwiched there-between, while thesecond laminate structure 310 b includes athird metal layer 306 b, afourth metal layer 308 b and asecond passivation layer 304 b sandwiched there-between. The first and secondlaminate structures core structure 302 may be a release film or a peelable mask film, for example. - The double-
sided lamination structure 300 can be formed by joining thecore structure 302 with twolaminate structures 310 a, 31% in sequence or simultaneously, for example. The release film may be made of a Teflon-based material (such as Tedlar® film), and has very limited adhesion toward the passivation layer or the metal layer. If the release film is employed as thecore structure 302, adhesive resin may be applied on the corners or the borders of the release film for enhancing the adhesion. If the peelable mask film is employed as thecore structure 302, it is preferred to choose the size or the shape of the peelable mask film for achieving sufficient adhesion and remaining peelable at the end of processing. For example, the peelable mask film can be applied on the borders (shaped as the picture frame) of one or both of thelaminate structures - Alternatively, as shown in FIG. 4A′, the
core structure 302′ of thelamination structure 300′ is an aluminum layer and thelamination structure 300′ can be formed by laminating and pressing the metal layers and the passivation layers to both surfaces of the aluminum layer sequentially or simultaneously, for example.Such lamination structure 300′ can be obtained through direct lamination or be commercially available. For the commerciallyavailable lamination structure 300′, adhesive resin is usually applied on the borders (shaped as the picture frame) of one or both of thelaminate structures - In
Step 32 &FIG. 4B , a drilling process and a plating process are performed to form plated-throughholes 310 passing through the double-sided lamination structure 300 (300′). - In
Step 34 &FIG. 4C , after first and second patterned photoresist layers 312 a, 312 b are respectively formed on the second and fourth metal layers 308 a, 308 b, the second and fourth metal layers 308 a, 308 b are patterned, using the first and second patterned photoresist layers 312 a, 312 b as the etching masks. - In
Step 36 &FIG. 4D , after removing the remained first and second patterned photoresist layers 312 a, 312 b, first and second mask layers 314 a, 314 b are respectively formed on the first and second passivation layers 304 a, 304 b and partially covering the second and fourth metal layers 308 a, 308 b. The first and second mask layers may be solder mask layers, for example. - In
Step 38 &FIG. 4E , a surface plating process is performed to form a nickel/gold layer 316 a/b on the exposed surfaces of the second and fourth metal layers 308 a, 308 b respectively. Optionally, a protective layer (not shown) may be further formed over both surfaces of the double-sided lamination structure 300 (300′). - In
Step 40, a punching/routing process may be optionally performed to cut off the border frame of the double-sided lamination structure 300 (300′). - In
Step 42 &FIG. 4F , the first and secondlaminate structures bottom surfaces lamination structure 300, as the border frame is punched off, it is easy to separate the first and secondlaminate structures core structure 302 by peeling with or without using an exatco knife blade, for example. For the commerciallyavailable lamination structure 300′, as the border frame is removed along with the adhesive resin frame, thelaminate structures lamination structure 300′, the separating process may require more force by using radius drums to peel thelaminate structures - In
Step 44 &FIG. 4G , the first and secondlaminate structures laminate structures third metal layers laminate structures - If the single-sided substrate structure is desired, the obtained first and second
laminate structures third metal layers - If the double-sided substrate structure is desired, the first and
third metal layers laminate structures -
FIG. 5 shows a cross-sectional view of an example of the double-sided substrate structure of the present invention. The double-sided substrate structure 500 includes two patternedmetal layers base 504 andmask layers metal layers - If considering following the above steps to process both metal layers of the structure 500, it is optional to perform the drilling and plating process twice or just once. If the plated-through
holes 510 are drilled twice and plated twice during processing, the resultant plated-throughhole 510 has afirst plating layer 512 a covering the sidewall of the through hole and the surface surrounding the bottom opening of the through hole and asecond plating layer 512 b covering the first plating layer and the surface surrounding the top opening of the through hole. It can reinforce the corners of the plated-through holes and increase the total thickness of the plating layers. The material of the first and second plating layer can be copper or copper alloys, for example. - According to the fabrication process of the present invention, copper clad laminates can be stacked on both surfaces of the aluminum carrier, the release film, or the peelable mask film as the lamination structure, and the lamination structure can be processed and separated to provide pseudo single-sided substrates. In addition, the pseudo single-sided substrates can be re-laminated and processed (the other side) to provide single-sided or double-sided substrates.
- To sum up, the fabrication process of the present invention can efficiently provide single-sided substrates or double-sided substrates based on the currently standard two-layer manufacturing technology. Furthermore, the productivity can be practically doubled without wasting the processing materials or the production line.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (12)
1. A multi-layered substrate structure, comprising:
a base having a top surface, a bottom surface, and at least a through-hole passing through the base;
a patterned first metal layer formed on the bottom surface of the base;
a patterned second metal layer formed on the top surface of the base;
a first plating layer covering a sidewall of the through-hole and the bottom surface surrounding a bottom opening of the through hole; and
a second plating layer covering the first plating layer and the top surface surrounding a top opening of the through hole.
2. The structure as claimed in claim 1 , further comprising a solder mask layer over the patterned first metal layer.
3. The structure as claimed in claim 1 , further comprising a solder mask layer over the patterned second metal layer.
4. The structure as claimed in claim 1 , wherein the patterned first metal layer comprises a copper layer and a Ni/Au layer located on the copper layer.
5. The structure as claimed in claim 1 , wherein the patterned second metal layer comprises a copper layer and a Ni/Au layer located on the copper layer.
6. The structure as claimed in claim 1 , wherein a material of the base is a resin material.
7. A multi-layered substrate structure, comprising:
a base having a top surface, a bottom surface, and at least a through-hole passing through the base;
a patterned first metal layer formed on the bottom surface of the base;
a patterned second metal layer formed on the top surface of the base;
a first plating layer having a first portion covering an sidewall of the through-hole entirely and a second portion covering the bottom surface surrounding a bottom opening of the through hole; and
a second plating layer having a third portion covering the entire first portion of the first plating layer and a fourth portion covering the top surface surrounding a top opening of the through hole, wherein the entire sidewall of the through-hole is covered by the first and third portions and corners of the through-hole are covered by both of the first and second plating layers.
8. The structure as claimed in claim 7 , further comprising a solder mask layer over the patterned first metal layer.
9. The structure as claimed in claim 7 , further comprising a solder mask layer over the patterned second metal layer.
10. The structure as claimed in claim 7 , wherein the patterned first metal layer comprises a copper layer and a Ni/Au layer located on the copper layer.
11. The structure as claimed in claim 7 , wherein the patterned second metal layer comprises a copper layer and a Ni/Au layer located on the copper layer.
12. The structure as claimed in claim 7 , wherein a material of the base is a resin material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/307,996 US20120073871A1 (en) | 2008-08-27 | 2011-11-30 | Multi-layered substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/199,149 US8104171B2 (en) | 2008-08-27 | 2008-08-27 | Method of fabricating multi-layered substrate |
US13/307,996 US20120073871A1 (en) | 2008-08-27 | 2011-11-30 | Multi-layered substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/199,149 Division US8104171B2 (en) | 2008-08-27 | 2008-08-27 | Method of fabricating multi-layered substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
US20120073871A1 true US20120073871A1 (en) | 2012-03-29 |
Family
ID=41725872
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/199,149 Active 2030-10-05 US8104171B2 (en) | 2008-08-27 | 2008-08-27 | Method of fabricating multi-layered substrate |
US13/307,996 Abandoned US20120073871A1 (en) | 2008-08-27 | 2011-11-30 | Multi-layered substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/199,149 Active 2030-10-05 US8104171B2 (en) | 2008-08-27 | 2008-08-27 | Method of fabricating multi-layered substrate |
Country Status (3)
Country | Link |
---|---|
US (2) | US8104171B2 (en) |
CN (1) | CN101673688B (en) |
TW (1) | TWI389613B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8987896B2 (en) * | 2009-12-16 | 2015-03-24 | Intel Corporation | High-density inter-package connections for ultra-thin package-on-package structures, and processes of forming same |
TWI400025B (en) * | 2009-12-29 | 2013-06-21 | Subtron Technology Co Ltd | Circuit substrate and manufacturing method thereof |
CN101937855B (en) * | 2010-08-10 | 2012-09-26 | 日月光半导体制造股份有限公司 | Manufacture method for buried capsulation structure of component and capsulation structure thereof |
US8945329B2 (en) * | 2011-06-24 | 2015-02-03 | Ibiden Co., Ltd. | Printed wiring board and method for manufacturing printed wiring board |
TWI500128B (en) * | 2011-12-06 | 2015-09-11 | Unimicron Technology Corp | Package substrate formed with support body and method of forming same |
DE202016102266U1 (en) * | 2016-04-28 | 2017-07-31 | Reinz-Dichtungs-Gmbh | Hydraulic system control panel |
JP6711229B2 (en) | 2016-09-30 | 2020-06-17 | 日亜化学工業株式会社 | Printed circuit board manufacturing method and light emitting device manufacturing method |
CN108848616B (en) * | 2018-08-01 | 2020-11-24 | 西安微电子技术研究所 | Structure for forming circuit board adhesive film and adhesive film forming method |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5218761A (en) * | 1991-04-08 | 1993-06-15 | Nec Corporation | Process for manufacturing printed wiring boards |
US5252195A (en) * | 1990-08-20 | 1993-10-12 | Mitsubishi Rayon Company Ltd. | Process for producing a printed wiring board |
US5442144A (en) * | 1993-08-26 | 1995-08-15 | International Business Machines Corporation | Multilayered circuit board |
US5689091A (en) * | 1996-09-19 | 1997-11-18 | Vlsi Technology, Inc. | Multi-layer substrate structure |
US6249053B1 (en) * | 1998-02-16 | 2001-06-19 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US6495394B1 (en) * | 1999-02-16 | 2002-12-17 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US20040002187A1 (en) * | 2002-06-27 | 2004-01-01 | Block Bruce A. | Enhanced on-chip decoupling capacitors and method of making same |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US20060019467A1 (en) * | 2004-07-23 | 2006-01-26 | In-Young Lee | Methods of fabricating integrated circuit chips for multi-chip packaging and wafers and chips formed thereby |
US20070181993A1 (en) * | 2006-02-06 | 2007-08-09 | Samsung Electronics Co., Ltd. | Printed circuit board including reinforced copper plated film and method of fabricating the same |
US20070199736A1 (en) * | 2006-02-27 | 2007-08-30 | Advanced Semiconductor Engineering, Inc. | Substrate with multilayer plated through hole and method for forming the multilayer plated through hole |
US20080036085A1 (en) * | 2006-05-10 | 2008-02-14 | Samsung Electronics Co., Ltd. | Circuit board including solder ball land having hole and semiconductor package having the circuit board |
US20090288873A1 (en) * | 2008-05-23 | 2009-11-26 | Shinko Electric Inudustries Co., Ltd. | Wiring board and method of manufacturing the same |
US20090321126A1 (en) * | 2008-06-27 | 2009-12-31 | Qualcomm Incorporated | Concentric Vias In Electronic Substrate |
US20100148210A1 (en) * | 2008-12-11 | 2010-06-17 | Huang Tien-Hao | Package structure for chip and method for forming the same |
US20100155962A1 (en) * | 2008-11-27 | 2010-06-24 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20100294543A1 (en) * | 2009-05-21 | 2010-11-25 | Young Ho Sohn | Heat dissipating substrate and method of manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1924775B2 (en) * | 1969-05-14 | 1971-06-09 | METHOD OF MANUFACTURING A CIRCUIT BOARD | |
US5509200A (en) * | 1994-11-21 | 1996-04-23 | International Business Machines Corporation | Method of making laminar stackable circuit board structure |
US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
KR100333627B1 (en) * | 2000-04-11 | 2002-04-22 | 구자홍 | Multi layer PCB and making method the same |
US7164197B2 (en) * | 2003-06-19 | 2007-01-16 | 3M Innovative Properties Company | Dielectric composite material |
CN1568129A (en) | 2003-06-24 | 2005-01-19 | 日月光半导体制造股份有限公司 | Circuit substrate and manufacturing method thereof |
KR100674319B1 (en) * | 2004-12-02 | 2007-01-24 | 삼성전기주식회사 | Manufacturing method of printed circuit board having thin core layer |
JP4897281B2 (en) | 2005-12-07 | 2012-03-14 | 新光電気工業株式会社 | Wiring board manufacturing method and electronic component mounting structure manufacturing method |
-
2008
- 2008-08-27 US US12/199,149 patent/US8104171B2/en active Active
-
2009
- 2009-07-23 TW TW098124901A patent/TWI389613B/en active
- 2009-08-27 CN CN200910171341.4A patent/CN101673688B/en active Active
-
2011
- 2011-11-30 US US13/307,996 patent/US20120073871A1/en not_active Abandoned
Patent Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252195A (en) * | 1990-08-20 | 1993-10-12 | Mitsubishi Rayon Company Ltd. | Process for producing a printed wiring board |
US5218761A (en) * | 1991-04-08 | 1993-06-15 | Nec Corporation | Process for manufacturing printed wiring boards |
US5442144A (en) * | 1993-08-26 | 1995-08-15 | International Business Machines Corporation | Multilayered circuit board |
US5689091A (en) * | 1996-09-19 | 1997-11-18 | Vlsi Technology, Inc. | Multi-layer substrate structure |
US6249053B1 (en) * | 1998-02-16 | 2001-06-19 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US20030036229A1 (en) * | 1998-02-16 | 2003-02-20 | Yoshikazu Nakata | Chip package and method for manufacturing the same |
US6495394B1 (en) * | 1999-02-16 | 2002-12-17 | Sumitomo Metal (Smi) Electronics Devices Inc. | Chip package and method for manufacturing the same |
US20080296731A1 (en) * | 2002-06-27 | 2008-12-04 | Block Bruce A | Enhanced on-chip decoupling capacitors and method of making same |
US20040002187A1 (en) * | 2002-06-27 | 2004-01-01 | Block Bruce A. | Enhanced on-chip decoupling capacitors and method of making same |
US20050259380A1 (en) * | 2002-06-27 | 2005-11-24 | Block Bruce A | Enhanced on-chip decoupling capacitors and method of making same |
US20040188744A1 (en) * | 2002-06-27 | 2004-09-30 | Block Bruce A. | Enhanced on-chip decoupling capacitors and method of making same |
US20050275750A1 (en) * | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
US20060019467A1 (en) * | 2004-07-23 | 2006-01-26 | In-Young Lee | Methods of fabricating integrated circuit chips for multi-chip packaging and wafers and chips formed thereby |
US20070181993A1 (en) * | 2006-02-06 | 2007-08-09 | Samsung Electronics Co., Ltd. | Printed circuit board including reinforced copper plated film and method of fabricating the same |
US20070199736A1 (en) * | 2006-02-27 | 2007-08-30 | Advanced Semiconductor Engineering, Inc. | Substrate with multilayer plated through hole and method for forming the multilayer plated through hole |
US20080036085A1 (en) * | 2006-05-10 | 2008-02-14 | Samsung Electronics Co., Ltd. | Circuit board including solder ball land having hole and semiconductor package having the circuit board |
US20090288873A1 (en) * | 2008-05-23 | 2009-11-26 | Shinko Electric Inudustries Co., Ltd. | Wiring board and method of manufacturing the same |
US20090321126A1 (en) * | 2008-06-27 | 2009-12-31 | Qualcomm Incorporated | Concentric Vias In Electronic Substrate |
US8273995B2 (en) * | 2008-06-27 | 2012-09-25 | Qualcomm Incorporated | Concentric vias in electronic substrate |
US20100155962A1 (en) * | 2008-11-27 | 2010-06-24 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US20100148210A1 (en) * | 2008-12-11 | 2010-06-17 | Huang Tien-Hao | Package structure for chip and method for forming the same |
US20100294543A1 (en) * | 2009-05-21 | 2010-11-25 | Young Ho Sohn | Heat dissipating substrate and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN101673688B (en) | 2011-08-03 |
TWI389613B (en) | 2013-03-11 |
US20100055392A1 (en) | 2010-03-04 |
US8104171B2 (en) | 2012-01-31 |
TW201010541A (en) | 2010-03-01 |
CN101673688A (en) | 2010-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20120073871A1 (en) | Multi-layered substrate | |
US7597929B2 (en) | Method of manufacturing a wiring substrate | |
US8445790B2 (en) | Coreless substrate having filled via pad and method of manufacturing the same | |
US20120279630A1 (en) | Manufacturing method of circuit substrate | |
JP2011199077A (en) | Method of manufacturing multilayer wiring board | |
JP2007335698A (en) | Manufacturing method of wiring board | |
KR20070120014A (en) | Process for producing circuit board | |
KR100897668B1 (en) | Fabricating Method of Printed Circuit Board using the Carrier | |
US10123413B2 (en) | Package substrate and manufacturing method thereof | |
JP2006049660A (en) | Manufacturing method of printed wiring board | |
JP2010050351A (en) | Method of manufacturing wiring substrate | |
JP2004047528A (en) | Semiconductor substrate and its producing method | |
JP2010016335A (en) | Metal laminate plate and manufacturing method thereof | |
US20150303073A1 (en) | Method of fabricating a packaging substrate | |
KR101441466B1 (en) | Ultra-thin package board and manufacturing method thereof | |
KR100366411B1 (en) | Multi layer PCB and making method the same | |
JP2000252411A (en) | Stacked semiconductor device and its manufacture | |
KR20090101404A (en) | Method of manufacturing coreless printed circuit board | |
WO2014109357A1 (en) | Method for producing wiring board and laminate with supporting material | |
US11178774B1 (en) | Method for manufacturing circuit board | |
JP4503698B2 (en) | Wiring board manufacturing method | |
KR20120036044A (en) | Method of manufacturing a chip-embedded multi-level printed circuit board | |
KR20140008184A (en) | Manufacturing method for printed circuit board | |
KR100861612B1 (en) | Fabricating method of printed circuit board using the carrier | |
KR100873673B1 (en) | Method of fabricating multi-layered printed circuit board with a metal bump and pcb manufactured thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |