US20130193594A1 - Gas delivery system - Google Patents
Gas delivery system Download PDFInfo
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- US20130193594A1 US20130193594A1 US13/802,830 US201313802830A US2013193594A1 US 20130193594 A1 US20130193594 A1 US 20130193594A1 US 201313802830 A US201313802830 A US 201313802830A US 2013193594 A1 US2013193594 A1 US 2013193594A1
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- United States
- Prior art keywords
- gas
- flow
- bubbler
- precursor
- flow pipe
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- B01F3/04099—
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/02—Energy absorbers; Noise absorbers
- F16L55/027—Throttle passages
- F16L55/02736—Throttle passages using transversal baffles defining a tortuous path
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
- F16L53/30—Heating of pipes or pipe systems
- F16L53/35—Ohmic-resistance heating
- F16L53/38—Ohmic-resistance heating using elongate electric heating elements, e.g. wires or ribbons
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/02—Energy absorbers; Noise absorbers
- F16L55/027—Throttle passages
- F16L55/02772—Throttle passages using spirally or helically shaped channels
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
A gas flow bubbler system for delivering a precursor gas to a production chamber, the bubbler system comprising: a bubbler for containing precursor molecules in a liquid phase; a cyclone separator for removing aerosol particles from the precursor gas; and a tube through which precursor gas generated in the bubbler flows to the cyclone separator.
Description
- This application is a divisional application of U.S. patent application Ser. No. 13/608,259, which claims benefit under 35 U.S.C. 119(e) of U.S.
Provisional Application 61/532,115 filed Sep. 8, 2011, the disclosure of which is incorporated herein by reference. - Embodiments of the invention relate to gas flow.
- Various thin layer deposition processes such as atomic layer deposition (ALD) and the many different epitaxial deposition techniques, such as chemical vapor deposition (CVD), hydride vapor phase epitaxial (HVPE) processes to name a few of the large family of deposition techniques used in manufacturing semiconductor devices are known. The processes are generally performed in device referred to as a reactor. The reactor has a production chamber in which a substrate having a surface on which a layer of a desired material is to be formed is supported by a pedestal in a region of the production chamber referred to as a “growth zone”. A gas delivery system in communication with the production chamber delivers precursor gases to the growth zone where they react and/or decompose under conditions of temperature and pressure that facilitate deposition of the desired material on the substrate surface. The reactor comprises various heating elements and pumps that are controlled to maintain regions of the production chamber and growth zone at desired temperatures and pressures.
- The gas delivery system typically comprises a system of delivery flow pipes, pumps, and valves that are controlled to transport the precursor gases from their sources outside the reactor to the production chamber at desired flow rates and partial pressures. Excess quantities of precursor gases delivered to the production chamber are removed from the production chamber after delivery to the growth zone by an exhaust system. The exhaust system may comprise an exhaust flow pipe that delivers the excess precursor gases to an abatement unit, which removes toxic gas components from the excess gases before the excess gases are released to the atmosphere.
- The various thin layer production processes may often be complex processes in which the quality of a deposited layer of a material is sensitively dependent on temperature, pressure and flow rates of the precursor gases used to form the layer. Generally, temperature of a precursor gas has to be maintained within an operating range of temperatures limited by lower and upper bound operating temperatures for the gas to function as required in a given deposition process. The range may be relatively small and in some instances the lower bound operating temperature may be a temperature below which the precursor gas forms an aerosol of liquid or solid particles and an upper bound operating temperature may be a temperature above which the gas undergoes pyrolysis and decomposes.
- Change in gas temperature to above an advantageous upper bound operating temperature or below an advantageous lower bound operating temperature may be caused by Joule-Thomson cooling or heating as the precursor gas undergoes pressure changes in flowing through the flow pipes pumps and valves of the gas delivery system from a source to the growth zone.
- An embodiment of the invention relates to providing a gas flow system that maintains temperature of a gas flowing along a flow path of the system to within a desired temperature range. Optionally the gas flow system is a gas flow system that delivers a precursor gas to a reactor.
- In an embodiment of the invention, the gas flow system comprises at least one flow pipe, in which the gas flows that has a wall configured to provide enhanced contact with the gas so that energy transfer between the wall and molecules of the gas that collide with the wall contributes advantageously to maintaining temperature of the gas within a desired operating temperature range. Contact of a gas with a wall or feature of the gas flow system refers to a frequency of collisions of molecules of the gas with the wall or feature. A flow pipe configured in accordance with an embodiment of the invention to provide desired contact with the gas, that is a desired frequency of collisions between gas molecules and the flow pipe wall, may be referred to as a “contact flow pipe”.
- In an embodiment of the invention, the contact flow pipe may have a cross section area that increases gradually along its length to provide slow change in pressure of the gas, so that contact between the gas and the wall maintains the gas within a desired temperature range. Optionally, the contact flow pipe may be serpentine to provide enhanced contact between aerosol particles that may be carried by the precursor gas and the wall of the contact flow pipe. The enhanced contact operates to increase a probability that the aerosols will evaporate or be sublimated and removed from the precursor gas. Additionally or alternatively, to provide enhanced contact, the contact flow pipe may be configured so that a cross section of the flow pipe has a circumference equal to or greater than about five times that of a circle having a same area as the cross section. Optionally, the contact flow pipe may have a cross section area that increases gradually along the length of the flow pipe to provide enhanced contact between the gas and the wall
- Optionally, a region of the wall of the flow pipe is maintained at a temperature for which energy transfer between the wall and molecules of the gas that collide with the wall is advantageous for maintaining the temperature of the gas within the desired temperature operating range. The wall temperature may be determined to cause vaporization of aerosol particles of the gas that collide with the wall.
- The contact flow pipe may comprise protuberances that contact the gas. In an embodiment of the invention, the protuberances are maintained at a temperature for which energy transfer between the protuberances and molecules of the gas that collide with the protuberances is advantageous for maintaining the temperature of the gas within the desired temperature operating range and/or for vaporizing or sublimating aerosol particles of the gas. Optionally, the protuberances are fin shaped, and may have an orientation that imparts a desired flow direction to the flowing gas. Optionally, the fin shaped protuberances impart a helical, rotary, or turbulent flow to the gas. Hereinafter helical or rotary flow may be referred to as rotary flow.
- The gas flow system may comprise an energy source, such as an electromagnetic or acoustic energy source, that is controllable to add energy to the gas to maintain the gas at a desired temperature. In an embodiment of the invention, the gas flow system comprises a temperature sensor that acquires measurements of the temperature of the gas and a controller that controls temperature of the wall or the energy source responsive to the acquired measurements.
- In an embodiment of the invention, changes in pressure of a first gas flowing in the flow system in a region of the flow path are moderated to maintain temperature of the first gas within a desired operating range by providing the region with a second gas at a pressure that moderates a rate and magnitude of expansion of the first gas.
- In the discussion, unless otherwise stated, adjectives such as “substantially” and “about” modifying a condition or relationship characteristic of a feature or features of an embodiment of the invention, are understood to mean that the condition or characteristic is defined to within tolerances that are acceptable for operation of the embodiment for an application for which it is intended
- This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
- Non-limiting examples of embodiments of the invention are described below with reference to figures attached hereto that are listed following this paragraph. Identical features that appear in more than one figure are generally labeled with a same label in all the figures in which they appear. A label labeling an icon representing a given feature of an embodiment of the invention in a figure may be used to reference the given feature. Dimensions of features shown in the figures are chosen for convenience and clarity of presentation and are not necessarily shown to scale.
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FIG. 1 schematically shows a gas flow system comprising a serpentine contact flow pipe for transporting a gas that is advantageous for maintaining a desired temperature of the gas in accordance with an embodiment of the invention; -
FIG. 2 schematically shows a production chamber of a reactor that may be coupled to the gas flow system shown inFIG. 1 for which gas passing through the production chamber has a flow pattern characterized by a substantially constant cross section, in accordance with an embodiment of the invention; -
FIG. 3 schematically shows a production chamber of a reactor that may be coupled to the gas flow system shown inFIG. 1 for which flow of gas in the production chamber is controlled by gas pressure, in accordance with an embodiment of the invention; -
FIG. 4 schematically shows a coil contact flow pipe, for transporting a gas that is advantageous for maintaining a desired temperature of the gas in accordance with an embodiment of the invention; -
FIG. 5 schematically shows an enhanced surface area contact flow pipe for transporting a gas that is advantageous for maintaining a desired temperature of the gas in accordance with an embodiment of the invention; -
FIG. 6 schematically shows a contact flow pipe having active elements for controlling temperature of a gas flowing in the contact flow pipe in accordance with an embodiment of the invention; and -
FIG. 7 schematically shows a gas flow system comprising a bubbler for transporting a precursor gas configured to reduce aerosols in the precursor gas flow, in accordance with an embodiment of the invention. -
FIG. 1 schematically shows agas flow system 20 comprising a serpentinecontact flow pipe 22 having awall 24 for delivering a gas, optionally to aproduction chamber 26 of a reactor (not shown inFIG. 1 ), that is advantageous for maintaining a desired temperature of the gas, in accordance with an embodiment of the invention. An axis ofcontact flow pipe 22 along a midline of the lumen defined bywall 24 ofcontact flow pipe 22 is represented by a dashed line “S”. Only a portion of the production chamber is shown. The gas is assumed to be a precursor gas optionally mixed with a suitable carrier gas that is to be delivered to the production chamber so that it flows over asurface 51 of asubstrate 50 to form a layer (not shown) of a desired material onsurface 51.Substrate 50 is supported on apedestal 27 located in the production chamber. Theproduction chamber 26 has a conical flow disperser 28 into which the precursor gas enters upon exit fromcontact flow pipe 22 via aninlet aperture 29 offlow dispenser 28.Flow disperser 28 is configured to facilitate radial flow of the precursor gas that entersproduction chamber 26 so that it flows oversubstrate 50 in directions indicted byflow arrows 99. For convenience of presentation, unless indicated otherwise, a mixture of a precursor gas and a carrier gas is referred to as a precursor gas or a gas. - The precursor gas is provided by a source (not shown) of the precursor gas so that it flows into
contact flow pipe 22 at an optionally relativelysmall inlet aperture 31 having dimensions that match an outlet aperture of the source. Flow of precursor gas intocontact flow pipe 22 atinlet aperture 31 is schematically indicated by aflow arrow 100.Contact flow pipe 22 functions as a spatial adapter that transports the precursor gas from the relativelysmall inlet aperture 31 to a relativelylarge outlet aperture 32 that has dimensions adapted to dimensions and flow requirements ofproduction chamber 26. - For example,
substrate 50 shown inFIG. 1 may be a 300 mm diameter silicon semiconductor wafer, and whereasinlet aperture 31 may advantageously be 2 to 10 mm in diameter,outlet aperture 32 may advantageously be 10-50 mm in diameter to matchinlet aperture 29 offlow disperser 28. Some reactor chambers are configured for processing more than one substrate at a time and for such multi-substrate productionchamber outlet aperture 32 may advantageously be larger than 50 mm. In flowing fromaperture 31 toaperture 32 volume of the precursor gas in general changes and undergoes expansion. - Changes in gas volume are usually accompanied by corresponding changes in temperature as a result of a Joule-Thomson effect. Generally, with expansion a gas undergoes cooling as kinetic energy of the gas is converted to potential energy in overcoming van-der-Waals attractive forces. In some situations a gas may be heated as it expands as a result of conversion of internal energy of gas molecules to kinetic energy of the gas molecules.
Contact flow pipe 22 in accordance with an embodiment of the invention is configured to moderate changes in temperature of the precursor gas as it flows from relativelysmall inlet aperture 31 to relativelylarge outlet aperture 32 and undergoes increase in volume. - In an embodiment of the invention a ratio “ROI” of area of
outlet aperture 32 divided by area ofinlet aperture 31 is greater than or equal to about 2. Optionally, ROI is greater than or equal to about 5. In some embodiments of the invention ROI is greater than or equal to about 10. To moderate temperature change for acontact flow pipe 22 having a given ROI, increase in cross section area ofcontact flow pipe 22 with distance along the flow pipe is constrained by an upper bound constraint. If “A” is the cross sectional area of the flow pipe at any given point along the contact flow pipe, the constraint may be (1/A)∂A/∂s≦K, where ∂A/∂s is the first derivative of A with respect to displacement “s” along axis S. In an embodiment of the invention K is less than or equal to 0.25 Optionally K is less than or equal to about 0.10. In an embodiment K is less than 0.05. - Constraining rate of increase in cross sectional area of
contact flow pipe 22 in accordance with an embodiment of the invention may provide sufficient frequency of collisions of molecules of precursor gas withwall 24 ofcontact flow pipe 22 so that energy exchange between the wall and gas provides a desired moderation of gas temperature due to volume expansion and pressure decline. - Additionally or alternatively, in an embodiment,
contact flow pipe 22 may be configured sufficiently serpentine so that aerosol particles that may be carried by the gas, because of their relatively large inertia, collide with greater frequency withwall 24 ofcontact flow pipe 22. The greater frequency of collision tends to evaporate or sublimate the aerosol particles and reduce their possible deleterious effects on processes that take place inproduction chamber 26 in forming the layer of desired material onsubstrate 50. - Let a measure of a degree to which
flow pipe 22 is serpentine be referred to as a serpentine index (SI). SI may be defined as an integral of an absolute value of changes in angle of direction that an “imaginary”unit vector 60 tangent to axis S ofcontact flow pipe 22 undergoes as anorigin 61 of the vector moves along the axis from theinlet aperture 31 to theoutlet aperture 32. - Increasing SI tends to increase a number of times aerosol particles carried by a precursor gas flowing in
contact flow pipe 22 collides with and exchanges energy withwall 24 of thecontact flow pipe 22. The increased number of collisions enhances a probability that the aerosol particles will evaporate or be sublimated before they reachproduction chamber 26. In an embodiment of the invention SI is greater than or about equal to about 180°. Optionally SI is greater than or about equal to 360°. Optionally SI is greater than or equal to about 720°. Inspection ofFIG. 1 indicates that SI forcontact flow pipe 22 is equal to 630°. - In some embodiments of the invention,
contact flow pipe 22 comprises mixingfins 80 that are optionally relatively thin, stave shaped deflectors that protrude inward from the wall ofcontact flow pipe 22 towards the axis S of the flow pipe. Mixingfins 80 tend to deflect flow of gas molecules and introduce turbulence into flow of the precursor gas that homogenizes gas temperature. Mixingfins 80 also aid in removing aerosol particles from the gas by transferring energy to aerosol particles that collide with the fins and increasing a probability that the aerosol particles evaporate or are sublimated. Flow directions and turbulence introduced by mixingfins 80 is indicated byarrows 101 representing flow of the gas in the vicinity of the mixing fins. - In an embodiment,
contact flow pipe 22 comprises “cyclone”fins 81 located nearexit aperture 32 of the contact flow pipe, shown magnified in aninset 90.Cyclone fins 81 introduce relatively smooth rotary flow into the precursor gas as it exitscontact flow pipe 22 and entersproduction chamber 26. The rotary flow of the precursor gas is schematically indicated bycurly flow arrows 102 aids in generating radial flow, indicated byflow arrows 99 of the precursor gas oversubstrate 50 after it entersproduction chamber 26 -
Production chamber 26 in an embodiment of the invention is a uniform flow production chamber. A uniform flow production chamber is configured so that precursor gas that enters the chamber from a gas flow system, such asgas flow system 20, flows with a substantially a same area cross section at all regions along its flow path through the production chamber. As a result, a uniform production chamber in accordance with an embodiment of the invention tends to prevent the formation of aerosols in the precursor gas as a result of a change in gas volume and concomitant drop in gas temperature. -
FIG. 2 schematically shows a uniformflow production chamber 200 of a reactor (not shown) in accordance with an embodiment of the invention.Production chamber 200 is optionally substantially rotationally symmetric about an axis ofrotation 201 of the production chamber. Precursor gas optionally mixed with an inert carrier gas enters the production chamber through aninlet aperture 202 having an area, substantially equal to an outlet aperture of a gas flow system, such asoutlet aperture 32 ofgas flow system 20 that delivers the precursor gas to the production chamber. Frominlet aperture 202, the precursor gas flows radially in aregion 204 over asubstrate 50 supported on apedestal 27 towards aperimeter 206 of the pedestal.Region 204 is bounded optionally by asurface 208 of aconical flow disperser 210 and substantially asurface 212 ofpedestal 27. Radial flow of the precursor gas is indicated byflow arrows 103. At the perimeter, after flowing oversubstrate 50 excess precursor gas flows “downwards” in directions indicated byflow arrows 104 into aregion 212 from which the excess gas exhausts via anexit aperture 214 optionally to an abatement unit (not shown).Region 212 is optionally bounded by asurface 216 that is substantially a mirror image surface ofsurface 208. - Let “A” represent area of
inlet aperture 202, “Ro” represent radius of the aperture, “Rp” radius of the perimeter ofpedestal 27 and “RC” radius ofproduction chamber 200. In accordance with an embodiment, to provide constant cross section flow oversubstrate 50 in directions indicated byflow arrows 103, height H ofsurface 208 at radius R≧Ro substantially satisfies an expression H=A/2σR. To match flow cross section atperimeter 206 in direction offlow arrows 104 to flow cross section of radial flow indicated byflow arrows 103 oversubstrate 50, RC and Rp may substantially satisfy an expression A=π(RC+Rp)(RC−Rp). -
FIG. 3 schematically shows a cross section of aproduction chamber 300 coupled to anexhaust system 302 that evacuates excess precursor gas after the precursor gas has entered aregion 304 ofproduction chamber 300 and passed oversubstrate 50, in accordance with an embodiment of the invention.Substrate 50 is supported by apedestal 27 mounted on apedestal stem 306 optionally journaled in astem socket 307. The pedestal and substrate may be raised and lowered inproduction chamber 300 by raising and lowering the stem pedestal relative to stemsocket 307 to enable insertion and removal ofsubstrate 50 via aslit valve 317.Production chamber 300 is substantially rotationally symmetric about anaxis 301. -
Exhaust system 302 comprises anexhaust manifold 310, optionally rotationally symmetric with respect toaxis 301 that communicates with aregion 312 ofproduction chamber 300 via a slit or plurality ofholes 314 in awall 315 of the production chamber. Precursor gas after passing oversubstrate 50 exits fromregion 304 ofproduction chamber 300 and intoregion 312 and fromregion 312 intomanifold 310 via the holes or slit. The precursor gas is evacuated from the manifold to anabatement unit 318 comprised in the exhaust system by avacuum pump 320 that maintainsregion 312 at a pressure less than pressure inregion 304 and pressure in aregion 314 belowpedestal 27.Flow barriers 322 operate to limit a rate at which precursor gas flows fromregion 304 into, and expands inregion 312 andexhaust manifold 310.Flow barriers 324 operate to limit flow of gas betweenregions 312 ofproduction chamber 300 andregion 314 belowpedestal 27. - In an embodiment of the invention a gas, referred to as an inert gas, that does not participate or affect reactions involving the precursor gas in
region 304 ofproduction chamber 300, is introduced via aninlet 324 intoregion 314 of the production chamber. Pressure of the inert gas functions to limit leakage of precursor gas intoregion 314 and to control and moderate a pressure differential betweenregions regions region 304 and flows and expands intoregion 312 andmanifold 310 and as a result temperature changes in the gas that may be generated by a Joule-Thomson effect. -
FIG. 4 schematically shows another serpentine gascontact flow pipe 400 in accordance with an embodiment of the invention. Contactgas flow pipe 400 has aninlet aperture 401, at least onepipe coil 402, and anoutlet aperture 403 having a diameter suitable for matching to an inlet aperture of a production chamber of a reactor such as production chamber 26 (FIG. 1 ).Contact flow pipe 400 has a pipe axis indicted by a dashed line “S” that passes through centers of cross sections of the contact flow pipe. Whereascontact flow pipe 400 is shown as having a circular cross section, practice of embodiments of the invention is not limited to a coil contact flow pipe having a circular cross section. A coil contact flow pipe, as well as other contact flow pipes, in accordance with an embodiment of the invention may for example, have an elliptical, rectangular, triangular, or irregular cross section. A coil contact flow pipe in accordance with an embodiment of the invention, may also have a shape of a spiral curve, such as by way of example a logarithmic or equiangular spiral, for which the coils of the spiral lie substantially in a plane. - By way of example, in
FIG. 4 contact flow pipe 400 comprises fivepipe coils 402 but is not limited to five pipe coils and may have less or more than five coils. A distance L betweeninlet aperture 401 andoutlet aperture 403 is shown inFIG. 4 . For convenience of visualization,contact flow pipe 400 is shown relative to a Cartesian coordinate system having x, y and z axes. - In an embodiment of the invention
contact flow pipe 400 has a percent rate of change in cross section area A with distance “s” along S that satisfies the constraint discussed above, (1/A)∂A/∂s≦K. For the exemplary fivepipe coils 402 comprised incontact flow pipe 400, the contact flow pipe has a serpentine index SI substantially equal to 1,800°. -
FIG. 5 schematically shows anothercontact flow pipe 500 in accordance with an embodiment of the invention.Contact flow pipe 500 has an axis S, and comprises a relatively small areacircular inlet aperture 501 and a relatively large areacircular outlet aperture 502.Contact flow pipe 500 may haveregions region 512, the cross section ofcontact flow pipe 500 morphs from having a substantially circular shape nearinlet aperture 501 to a noncircularshape cross section 520 inregions 513, . . . , 516. By way of example, thenoncircular cross sections 520 are rectangular. Optionally, the area ofcross sections 520 increases with proximity of the cross sections tooutlet 502 inregions region 515. Inregion 516contact flow pipe 500 may morph to a pipe shape having a relatively large circular cross section substantially equal to that ofoutlet aperture 502. - In accordance with an embodiment of the invention, a circumference of each
cross section 520 is substantially larger than a circumference of a circle having a same area as thecross section 520. Let “CR” represent a ratio of the circumference of across section 520 to a circumference of a circle having a same area as the cross section. In an embodiment of the invention CR is greater than or about equal to 5. Optionally, CR is greater than or about equal to 10. In some embodiments of the invention CR is greater than or about equal to 25. - For a given cross section area of a gas flow pipe, molecules of a gas flowing in a pipe having a cross section with a greater circumference collide more frequently with the pipe wall than gas flowing in a pipe having a cross section of smaller circumference. By providing
contact flow pipe 500 withcross sections 520 having a relatively large CR a precursor gas flowing incontact flow pipe 500 may experience an enhanced frequency of collisions with the wall of the contact flow pipe sufficient to moderate changes in temperature of the gas due to changes in volume of the gas. - A
graph 550 shows acurve 551 that illustrates, in accordance with an embodiment of the invention, a hypothetical dependence of temperature T of a gas flowing frominlet aperture 501 tooutlet aperture 502 ofcontact flow pipe 500 as a function of s along axis S of the contact flow pipe. By way of example, it is assumed that it is advantageous that the gas remain in a range of temperatures between a temperature lower bound TLB and a temperature upper bound TUB and that the walls ofcontact flow pipe 500 are maintained at a suitable temperature between TLB and TUB, and optionally near TUB. - Following entry into
contact flow pipe 500 atinlet aperture 501, the volume of the gas expands in regions 512-514 and temperature of the gas decreases as indicated bycurve 551. However, because of the relatively large value of CR forcross sections 520 in regions 512-514 in accordance with an embodiment of the invention, it is expected that the decrease in temperature is smaller than might obtain for a conventional gas flow pipe. Inregion 515, the volume of the gas is substantially constant and by way of example is assumed to remain substantially constant inregion 516. However, because of the increased interaction of the gas with the walls ofcontact flow pipe 500 resulting from a relatively large value CR forcross section 520 inregions contact flow pipe 500. -
FIG. 6 schematically shows a gascontact flow pipe 600 having awall 602 and active elements for controlling temperature of a precursor gas flowing in the contact flow pipe, in accordance with an embodiment of the invention.Contact flow pipe 600 is optionally coupled to agas disperser 603 through which a precursor gas exits the contact flow pipe to flow over asubstrate 50. -
Contact flow pipe 600 is optionally serpentine and comprisestemperature control elements 604 coupled towall 602 that are controllable by a controller (not shown) to maintain a desired temperature of the wall. Optionally,contact flow pipe 600 comprisestemperature sensors 608 configured to acquire measurements of temperature of a precursor gas flowing in the contact flow pipe. In an embodiment, thecontroller controlling elements 604 controls the elements responsive to temperature measurements acquired bysensors 608. Temperature control elements may be controllable to heat and/orcool wall 602 and may for example comprise a Peltier device. - Optionally,
contact flow pipe 600 comprisestemperature control fins 610 that may be heated and/or cooled to control temperature of gas flowing in the contact flow pipe. Heating or cooling of a fin may be accomplished by a suitable heating and/or cooing element or device, such as by way of example,temperature control elements 604, thermally coupled to the fin or housed inside the fin. In an embodiment of the inventioncontact flow pipe 600 comprisescyclone fins 612 that introduce rotary flow to a gas flowing in the contact flow pipe. Optionally,cyclone fins 612 may be heated and/or cooled to control temperature of a gas flowing in the contact flow pipe. - In an embodiment of the invention, contact flow pipe comprises an
energy transmission window 614 thru which a source of electromagnetic or acoustic energy may be transmitted from outside the contact flow pipe to a gas flowing in the contact flow pipe. For example,energy transfer window 614 may comprise a thin dielectric window through which electromagnetic energy may be transmitted intocontact flow pipe 600. Optionally, the window comprises a microwave antenna on a side of the window facing the lumen ofcontact flow pipe 600 and a conductive contacts for connecting a microwave power source to the antenna on a side of the window facing away from the lumen. -
FIG. 7 schematically shows a gasflow bubbler system 700 comprising abubbler 702 for delivering a precursor gas contained inbubbler 702 as a liquid 704 to a production chamber (not shown) and acyclone separator 720 for removing aerosols in the precursor gas, in accordance with an embodiment of the invention. -
Bubbler system 700 optionally comprises a heater (not shown) that heats liquid 704 to generate precursor gas and abubbler inlet pipe 705. An inert carrier gas is introduced viainlet pipe 705 to flow throughliquid precursor 704 and form bubbles 706 in the liquid precursor that acquire precursor gas generated in the liquid precursor by the heater.Bubbles 706 of carrier gas and precursor flow leave liquid 704 to flow as a gas in a direction indicated byflow arrows 107 that leaves the bubbler via anexit pipe 707 and optionally arotary flow unit 708 comprisingcyclone fins 709.Optionally exit pipe 707 androtary flow unit 708 are coupled toheaters 710.Heaters 710 heat thegas leaving bubbler 702 to remove aerosol particles in the gas.Cyclone fins 709 inrotary flow unit 708 impart rotary flow to the gas that operates to spin aerosol particles in the gas to the walls of the rotary gas flow unit and flow pipes downstream of the rotary gas flow unit. In collisions of the aerosol particles with the walls andcyclone fins 709 the aerosol particles tend to pick up energy that evaporates and/or sublimates the aerosol particles. - After passing through
exit pipe 707 androtary flow unit 708 the gas of carrier and precursor molecules flows through a bridgingpipe 712 coupled tocyclone separator 720.Cyclone separator 720 is substantially rotationally symmetric about anaxis 721 and comprises afunnel 722.Bridging pipe 712 is positioned so that gas flowing though bridgingpipe 712 enters and flows off center fromaxis 721 to generate rotational flow of the entering gas relative to the axis. Centrifugal forces generated by the rotational flow of the gas causes aerosol particles carried by the gas to impact the wall offunnel 722 and drip back toprecursor liquid 704 inbubbler 702 via adrip pipe 714. Carrier and precursor molecules in the gas are reflected upwards to exit the cyclone separator via a delivery pipe through which the gas, relatively free of aerosol particles flows towards the production chamber. Flow of carrier and precursor gas incyclone separator 720 is schematically indicated by a curledflow arrow 110. Dripping of aerosol particles toliquid 704 is indicated by anarrow 111 and is facilitated optionally by apump 724 which aspirates gas fromcyclone separator 720 tobubbler 702. - It is noted whereas in the above, a bubbler is used to provide a precursor in a gas phase a sublimation precursor gas generator can be used in place of a bubbler to generate a precursor in a gas phase.
- In the description and claims of the present application, each of the verbs, “comprise” “include” and “have”, and conjugates thereof, are used to indicate that the object or objects of the verb are not necessarily a complete listing of components, elements or parts of the subject or subjects of the verb.
- Descriptions of embodiments of the invention in the present application are provided by way of example and are not intended to limit the scope of the invention. The described embodiments comprise different features, not all of which are required in all embodiments of the invention. Some embodiments utilize only some of the features or possible combinations of the features. Variations of embodiments of the invention that are described, and embodiments of the invention comprising different combinations of features noted in the described embodiments, will occur to persons of the art. The scope of the invention is limited only by the claims.
Claims (7)
1. A gas flow bubbler system for delivering a precursor gas to a production chamber, the bubbler system comprising:
a bubbler for containing precursor molecules in a liquid phase;
a cyclone separator for removing aerosol particles from the precursor gas; and
a tube through which precursor gas generated in the bubbler flows to the cyclone separator.
2. A gas flow bubbler system according to claim 1 and comprising a rotary flow unit through which gas from the bubbler flows on its way to the cyclone separator.
3. A gas flow bubbler system according to claim 2 wherein the rotary flow unit comprises cyclone fins that impart rotary flow to the gas.
4. A gas flow bubbler system according to claim 2 wherein the rotary flow unit is coupled to a heater that heats gas flowing through the rotary flow unit.
5. A gas flow bubbler system according to claim 1 wherein the cyclone separator has a central axis and the tube through which the precursor gas flows to the cyclone separator is positioned so that the precursor gas flows into the cyclone separator off center of the central axis.
6. A gas flow bubbler system according to claim 1 wherein the cyclone separator is coupled to the bubbler so that aerosol particles removed from the precursor gas by the cyclone separator are returned to the bubbler.
7. A gas flow bubbler system according to claim 6 and comprising a pump which aspirates gas from the cyclone separator to the bubbler.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US13/802,830 US20130193594A1 (en) | 2011-09-08 | 2013-03-14 | Gas delivery system |
Applications Claiming Priority (3)
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US201161532115P | 2011-09-08 | 2011-09-08 | |
US13/608,259 US8485230B2 (en) | 2011-09-08 | 2012-09-10 | Gas delivery system |
US13/802,830 US20130193594A1 (en) | 2011-09-08 | 2013-03-14 | Gas delivery system |
Related Parent Applications (1)
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US13/608,259 Division US8485230B2 (en) | 2011-09-08 | 2012-09-10 | Gas delivery system |
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US13/608,259 Active US8485230B2 (en) | 2011-09-08 | 2012-09-10 | Gas delivery system |
US13/802,830 Abandoned US20130193594A1 (en) | 2011-09-08 | 2013-03-14 | Gas delivery system |
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US13/608,259 Active US8485230B2 (en) | 2011-09-08 | 2012-09-10 | Gas delivery system |
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JP6306356B2 (en) * | 2014-01-27 | 2018-04-04 | 有限会社コンタミネーション・コントロール・サービス | Rotating flow generator, piping system including the same, semiconductor manufacturing apparatus and heat exchanger |
DE102014106523A1 (en) * | 2014-05-09 | 2015-11-12 | Aixtron Se | Apparatus and method for supplying a CVD or PVD coating device with a process gas mixture |
JP6371738B2 (en) * | 2015-05-28 | 2018-08-08 | 株式会社東芝 | Deposition equipment |
US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
KR101899678B1 (en) * | 2016-12-21 | 2018-09-17 | 주식회사 포스코 | Filter unit and coating apparatus having thereof |
DE102018106751A1 (en) * | 2017-07-31 | 2019-01-31 | Taiwan Semiconductor Manufacturing Co. Ltd. | AUTOMATED INSPECTION TOOL |
CN107740072A (en) * | 2017-12-04 | 2018-02-27 | 京东方科技集团股份有限公司 | Gas mixer and method and the CVD equipment including the gas mixer |
DE102018213276A1 (en) * | 2018-08-08 | 2020-02-13 | Contitech Mgw Gmbh | Device for regulating the swirl of a fluid flowing in a pipeline |
CN111375245A (en) * | 2018-12-31 | 2020-07-07 | 中国石油化工股份有限公司 | Pipe assembly for connecting gas-liquid cyclone separator and downstream gas phase pipeline |
US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
KR20210048408A (en) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor deposition reactor manifolds |
DE102019129176A1 (en) * | 2019-10-29 | 2021-04-29 | Apeva Se | Method and device for depositing organic layers |
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US8485230B2 (en) | 2013-07-16 |
US20130061759A1 (en) | 2013-03-14 |
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