US20130260574A1 - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
- Publication number
- US20130260574A1 US20130260574A1 US13/853,016 US201313853016A US2013260574A1 US 20130260574 A1 US20130260574 A1 US 20130260574A1 US 201313853016 A US201313853016 A US 201313853016A US 2013260574 A1 US2013260574 A1 US 2013260574A1
- Authority
- US
- United States
- Prior art keywords
- substrate
- processing liquid
- chamber
- processing
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate.
Description
- The present invention relates to a substrate processing apparatus for and a substrate processing method of processing substrates.
- In a process of manufacturing a semiconductor substrate (hereinafter, referred to simply as a “substrate”) , conventionally, various processings are performed on a substrate by using a substrate processing apparatus. By supplying a processing liquid onto a substrate having a surface on which a resist pattern is formed, for example, a processing such as etching or the like is performed on the surface of the substrate. Further, after the etching is finished, a process of removing the resist from the substrate and a process of cleaning the substrate are also performed.
- Japanese Patent Application Laid-Open No. 2008-85150 (Document 1) relates to a method of cleaning a substrate on which a fine pattern is formed. In a cleaning device shown in
Document 1, the inside of a sealed cover in which a substrate is placed is vacuumed to degas the substrate, and the wettability of a surface of the substrate can be thereby improved. Subsequently, a processing liquid is supplied into the sealed cover and the whole of the substrate is immersed in the processing liquid. Then, after bringing the inside of the sealed cover back to normal pressure and removing the sealed cover, rotation of the substrate is started and a cleaning process and the like are performed while the processing liquid is supplied onto the substrate. In the cleaning device, by improving the wettability of the surface of the substrate, a cleaning solution can be brought into good contact with a recessed portion of the fine pattern. Further, in the cleaning device, by increasing pressure in a state where the substrate is immersed in the cleaning solution, the cleaning solution can be infiltrated into the recessed portion of the fine pattern. - Japanese Patent Application Laid-Open No. 2005-191251 (Document 2) discloses an apparatus in which by supplying vapor or the like to a wafer placed in a pressurized chamber in a pressurized atmosphere, moisture is infiltrated into an unnecessary substance on an upper surface of a wafer, and then the unnecessary substance on the upper surface is removed by supplying hot water or the like under normal pressure or in a reduced pressure atmosphere. Further, in a semiconductor wafer developing device disclosed in Japanese Patent Application Laid-Open No. 6-283413 (Document 3), after bringing a processing chamber in which a semiconductor wafer is contained into a reduced pressure atmosphere, by opening a developer supply valve, the processing chamber is filled with the developer. Then, the semiconductor wafer is immersed in the developer and the semiconductor wafer is thereby developed.
- In a film formation device disclosed in Patent Publication No. 3099053 (Document 4), a process gas supply part is provided above a wafer in a chamber and an infrared lamp is provided below the wafer. Then, after bringing the inside of the chamber into a vacuum atmosphere, by supplying a process gas while heating the wafer, a thin film is formed on a surface of the wafer. Further, in an apparatus disclosed in Japanese Patent Application Laid-Open No. 9-246156 (Document 5), after rinsing a developer or the like on a wafer by using a rinse liquid, the wafer is dried while being rotated at high speed in a reduced pressure atmosphere.
- On the other hand, a semiconductor manufacturing apparatus disclosed in Japanese Patent Application Laid-Open No. 3-22428 (Document 6) uniformizes the amount of processing liquid to be dropped between a center portion of a substrate and a peripheral portion thereof by linearly moving a processing liquid discharge nozzle for dropping a processing liquid toward the substrate in a radial direction above the substrate being rotated.
- In the case where a processing liquid is supplied onto a substrate and a predetermined processing is thereby performed on a main surface of the substrate, in order to shorten the time required for the processing and uniformize the quality of the processing entirely on the main surface of the substrate, it is preferable that the time from when the supply of the processing liquid is started until the main surface is coated with the processing liquid should be as short as possible.
- The present invention is intended for a substrate processing apparatus for processing a substrate, and it is an object of the present invention to perform coating of a main surface of a substrate with a processing liquid in a short time.
- The substrate processing apparatus according to the present invention includes a substrate holding part for holding a substrate with a main surface thereof directed upward, a processing liquid supply part for supplying a processing liquid onto a center portion of the main surface of the substrate, a substrate rotating mechanism for rotating the substrate together with the substrate holding part, a chamber for containing the substrate holding part in an internal space thereof, a pressure changing part for changing pressure in the internal space of the chamber, and a control part for controlling the processing liquid supply part, the substrate rotating mechanism, and the pressure changing part to bring the internal space of the chamber into a reduced pressure atmosphere and supply the processing liquid onto the main surface of the substrate while rotating the substrate in the reduced pressure atmosphere, to thereby coat the main surface of the substrate with the processing liquid. By the substrate processing apparatus of the present invention, it is possible to perform coating of the main surface of the substrate with the processing liquid in a short time.
- In a preferred embodiment of the present invention, a pattern is formed on the main surface of the substrate, and the control part controls the processing liquid supply part, the substrate rotating mechanism, and the pressure changing part, after the main surface of the substrate is coated with the processing liquid, to increase pressure in the internal space of the chamber and continuously supply the processing liquid onto the main surface of the substrate while rotating the substrate, to thereby perform a predetermined processing.
- Preferably, the predetermined processing is performed in a pressurized atmosphere.
- Further, the number of revolutions of the substrate in performing the predetermined processing on the substrate is smaller than that of the substrate in coating the main surface of the substrate with the processing liquid.
- In another preferred embodiment of the present invention, the substrate processing apparatus further includes a processing liquid discharge part for sucking the processing liquid overflown from the main surface of the substrate near an edge of the substrate to discharge the processing liquid to the outside of the chamber.
- In still another preferred embodiment of the present invention, the supply of the processing liquid from the processing liquid supply part in the reduced pressure atmosphere of the internal space of the chamber is performed by a pressure difference between the internal space and the outside of the chamber.
- In yet another preferred embodiment of the present invention, the substrate processing apparatus further includes another processing liquid supply part for supplying another processing liquid onto the center portion of the main surface of the substrate, and in the substrate processing apparatus of the present invention, the control part controls the processing liquid supply part, the other processing liquid supply part, the substrate rotating mechanism, and the pressure changing part to stop the supply of the processing liquid and bring the internal space of the chamber into the reduced pressure atmosphere, and then supply the other processing liquid onto the main surface of the substrate coated with the processing liquid to replace the processing liquid with the other processing liquid while rotating the substrate, to thereby coat the main surface of the substrate with the other processing liquid.
- Preferably, a pattern is formed on the main surface of the substrate, and the control part controls the other processing liquid supply part, the substrate rotating mechanism, and the pressure changing part, after the main surface of the substrate is coated with the other processing liquid, to increase pressure in the internal space of the chamber and continuously supply the other processing liquid onto the main surface of the substrate while rotating the substrate, to thereby perform another processing.
- More preferably, the other processing is performed in a pressurized atmosphere.
- In a further preferred embodiment of the present invention, the substrate processing apparatus further includes a heating part for heating the substrate, and in the substrate processing apparatus of the present invention, the control part controls the pressure changing part and the heating part to bring the internal space of the chamber into the reduced pressure atmosphere and heat the substrate in the reduced pressure atmosphere.
- Preferably, the heating part emits light toward the substrate, to thereby heat the substrate.
- In a still further preferred embodiment of the present invention, the control part controls the pressure changing part and the substrate rotating mechanism to bring the internal space of the chamber into the reduced pressure atmosphere and rotate the substrate in the reduced pressure atmosphere, to thereby dry the substrate.
- In a yet further preferred embodiment of the present invention, the processing liquid is an etching solution.
- The present invention is also intended for a substrate processing method of processing a substrate.
- These and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
-
FIG. 1 is a view showing a configuration of a substrate processing apparatus in accordance with a first preferred embodiment of the present invention; -
FIG. 2 is a flowchart showing an operation flow of substrate processing; -
FIG. 3 is a timing chart of the substrate processing; -
FIG. 4 is a view showing a configuration of a substrate processing apparatus in accordance with a second preferred embodiment of the present invention; -
FIG. 5 is a flowchart showing an operation flow of substrate processing; and -
FIG. 6 is a timing chart of the substrate processing. -
FIG. 1 is a view showing a configuration of asubstrate processing apparatus 1 in accordance with the first preferred embodiment of the present invention. Thesubstrate processing apparatus 1 is a single-substrate processing apparatus for supplying a processing liquid to a semiconductor substrate 9 (hereinafter, referred to simply as a “substrate 9”) having a substantially disk-like shape to process substrates one by one. - The
substrate processing apparatus 1 includes asubstrate holding part 2, a first processingliquid supply part 3, a second processingliquid supply part 4, asubstrate rotating mechanism 5, agas supply part 61, asuction part 62, achamber 7, aheating part 8, and acontrol part 11.FIG. 1 is a cross section showing thesubstrate holding part 2, thesubstrate rotating mechanism 5, and thechamber 7. - The
chamber 7 has a substantially disk-like chamber bottom 71, a substantiallycylindrical chamber sidewall 72 fixed to a periphery of the chamber bottom 71, a substantially disk-like chamber cover 73 closing an upper opening of thechamber sidewall 72. Thechamber cover 73 is vertically movable, and thesubstrate 9 is loaded/unloaded into/from thechamber 7 with thechamber cover 73 moved upward, being away from thechamber sidewall 72. When thechamber cover 73 is pressed onto an upper portion of thechamber sidewall 72, aninternal space 70 of thechamber 7, which is a sealed space, is formed. The chamber bottom 71 and thechamber cover 73 are translucent members formed of quartz or the like. - An
upper pipe 75 is provided at a center portion of thechamber cover 73 and an upper pipe 78 having an annular cross section is provided around theupper pipe 75. The first processingliquid supply part 3 and the second processingliquid supply part 4 are connected to theupper pipe 75 through anupper changeover valve 751, and thegas supply part 61 is connected to the upper pipe 78. Alower center pipe 76 is provided at a center portion of the chamber bottom 71. The first processingliquid supply part 3 and the second processingliquid supply part 4 are connected to thelower center pipe 76 through alower changeover valve 761. A plurality of lowerperipheral pipes 77 are provided in a peripheral portion of the chamber bottom 71 at regular pitches in a circumferential direction. Thesuction part 62 is connected to the plurality of lowerperipheral pipes 77 through avalve 621. - The
substrate rotating mechanism 5 is a so-called hollow motor and includes astator 51 disposed inside thechamber sidewall 72 in the circumferential direction and a substantiallyannular rotor 52 disposed inside thestator 51 in theinternal space 70 of thechamber 7. Therotor 52 is supported by a magnetic force exerted between therotor 52 and thestator 51 without coming into contact with thestator 51 or thechamber sidewall 72 and rotated about a vertical central axis. - The
substrate holding part 2 is a substantially annular disk-like member fixed to an inner peripheral surface of therotor 52 of thesubstrate rotating mechanism 5 and contained in theinternal space 70 of thechamber 7 together with therotor 52. Thesubstrate 9 is placed on thesubstrate holding part 2 with a main surface 91 (hereinafter, referred to as an “upper surface 91”) thereof on which a fine pattern is formed directed upward, to be thereby held by thesubstrate holding part 2. In other words, thesubstrate holding part 2 comes into contact with alower surface 92 of thesubstrate 9, to thereby hold thesubstrate 9. Thesubstrate holding part 2 may be formed of, for example, a plurality of convex portions protruding from the inner peripheral surface of therotor 52 inward in the radial direction. In thesubstrate processing apparatus 1, thecontrol part 11 controls the substraterotating mechanism 5 to rotate thesubstrate 9 together with thesubstrate holding part 2 and therotor 52 in a horizontal position about the central axis passing through the center of thesubstrate 9 and being perpendicular to theupper surface 91 of thesubstrate 9. - The first processing
liquid supply part 3 includes a firstprocessing liquid pipe 31 for connecting afirst pooling part 30 for pooling a first processing liquid therein and theupper pipe 75 and apump 32 provided on the firstprocessing liquid pipe 31. The second processing liquid supply part 4 (i.e. anothrer processing liquid supply part) includes a secondprocessing liquid pipe 41 for connecting asecond pooling part 40 for pooling a second processing liquid (i.e. anothrer processing liquid) therein and theupper pipe 75 and apump 42 provided on the secondprocessing liquid pipe 41. Thegas supply part 61 includes agas pipe 611 for connecting agas source 610 and the upper pipe 78, and apump 612 and avalve 613 which are provided on thegas pipe 611. Theupper pipe 75, thelower center pipe 76, theupper changeover valve 751, and thelower changeover valve 761 which are described above are shared by the first processingliquid supply part 3 and the second processingliquid supply part 4. - In the
substrate processing apparatus 1, thecontrol part 11 controls thepump 32 of the first processingliquid supply part 3, theupper changeover valve 751, and thelower changeover valve 761 to supply the first processing liquid onto a center portion of theupper surface 91 of thesubstrate 9 from theupper pipe 75 and supply the first processing liquid onto a center portion of thelower surface 92 of thesubstrate 9 from thelower center pipe 76. Further, thecontrol part 11 controls thepump 42 of the second processingliquid supply part 4, theupper changeover valve 751, and thelower changeover valve 761 to supply the second processing liquid onto the center portion of theupper surface 91 of thesubstrate 9 from theupper pipe 75 and supply the second processing liquid onto the center portion of thelower surface 92 of thesubstrate 9 from thelower center pipe 76. In this preferred embodiment, the first processing liquid is an etching solution such as hydrofluoric acid, a tetramethylammonium hydroxide solution, or the like, and the second processing liquid is deionized water (DIW). - In the
substrate processing apparatus 1, thecontrol part 11 controls thepump 612 and thevalve 613 of thegas supply part 61 to supply gas into theinternal space 70 of thechamber 7 from the upper pipe 78. In this preferred embodiment, nitrogen gas (N2) is supplied into thechamber 7 by thegas supply part 61. - The
suction part 62 performs suction near an edge of thesubstrate 9 through the plurality of lowerperipheral pipes 77. This suction causes the gas in theinternal space 70 of thechamber 7 to be discharged to the outside of thechamber 7. In thesubstrate processing apparatus 1, thecontrol part 11 controls thegas supply part 61 and thesuction part 62 to change the pressure in theinternal space 70 of thechamber 7. Specifically, by supplying gas into thechamber 7 from thegas supply part 61 with thevalve 621 between thesuction part 62 and the lowerperipheral pipe 77 closed, the pressure in theinternal space 70 of thechamber 7 increases to be higher than the normal pressure, (atmospheric pressure) and theinternal space 70 is brought into a pressurized atmosphere. Further, by discharging the gas from thechamber 7 by thesuction part 62 with thevalve 613 of thegas supply part 61 closed, the pressure in theinternal space 70 decreases to be lower than the normal pressure, and theinternal space 70 is brought into a reduced pressure atmosphere. Thus, thegas supply part 61 and thesuction part 62 serve as a pressure changing part for changing the pressure in theinternal space 70 of thechamber 7. - The
suction part 62 performs suction near the edge of thesubstrate 9 through the plurality of lowerperipheral pipes 77, to thereby discharge the processing liquids supplied into thechamber 7 by the first processingliquid supply part 3 and the second processingliquid supply part 4. Thus, thesuction part 62 also serves as a processing liquid discharge part. - The
heating part 8 includeslamps 81 provided in an upper portion and a lower portion of thechamber 7. Thelamp 81 emits light toward thesubstrate 9 through thechamber cover 73 and the chamber bottom 71, to thereby heat thesubstrate 9. -
FIG. 2 is a flowchart showing an operation flow of processing thesubstrate 9 in thesubstrate processing apparatus 1.FIG. 3 is a timing chart of processing thesubstrate 9. InFIG. 3 , aline 101 represents the pressure in thechamber 7, aline 102 represents the amount of first processing liquid supplied from the first processingliquid supply part 3, aline 103 represents the amount of second processing liquid supplied from the second processingliquid supply part 4, and aline 104 represents ON/OFF of thelamp 81 of theheating part 8. - In the
substrate processing apparatus 1, first, thesubstrate 9 is loaded into thechamber 7 and held by thesubstrate holding part 2, and thechamber cover 73 closes the upper opening of thechamber sidewall 72, to thereby hermetically seal thechamber 7. After thechamber 7 is hermetically sealed, thecontrol part 11 controls the substraterotating mechanism 5 to start rotation of the substrate 9 (Step S11). - Subsequently, the
control part 11 controls theheating part 8 and thesuction part 62 to light thelamp 81 and discharge the gas from thechamber 7. Then, with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere, theheating part 8 heats thesubstrate 9 for a predetermined time period (Step S12). The pressure in theinternal space 70 of thechamber 7 which is in the reduced pressure atmosphere should be preferably set lower than the normal pressure, and not lower than about 15 kPa. - Next, the
control part 11 controls the first processingliquid supply part 3 to continuously supply the first processing liquid from theupper pipe 75 onto theupper surface 91 of thesubstrate 9 being rotated in thechamber 7 in the reduced pressure atmosphere. The first processing liquid supplied onto the center portion of theupper surface 91 of thesubstrate 9 is spread toward the peripheral portion by the rotation of thesubstrate 9, and the entireupper surface 91 is thereby coated with the first processing liquid (Step S13). The first processing liquid overflown from theupper surface 91 of thesubstrate 9 is sucked by thesuction part 62 which is controlled by thecontrol part 11, to be thereby discharged to the outside of thechamber 7. Further, the first processing liquid is also supplied from thelower center pipe 76 onto the center portion of thelower surface 92 of thesubstrate 9 and spread toward the peripheral portion by the rotation of thesubstrate 9. - After the
upper surface 91 of thesubstrate 9 is coated with the first processing liquid, thecontrol part 11 controls thegas supply part 61 to increase the pressure in theinternal space 70 of thechamber 7 to a predetermined pressure higher than the normal pressure, (preferably higher than the normal pressure, and not higher than a pressure higher than the normal pressure by about 0.1 MPa). Further, thecontrol part 11 controls the first processingliquid supply part 3 and the substraterotating mechanism 5 to reduce the amount of first processing liquid (hereinafter, referred to as “flow rate”) supplied from the first processingliquid supply part 3 per unit time and reduce the number of revolution (i.e. decrease the rotating speed) of thesubstrate 9. As indicated by the two-dot chain line inFIG. 3 , while the pressure in theinternal space 70 increases, the supply of the first processing liquid may be stopped. When theinternal space 70 of thechamber 7 is brought into a predetermined pressurized atmosphere, the first processing liquid which is an etching solution is continuously supplied at a flow rate lower than that in Step S13 onto theupper surface 91 of thesubstrate 9 being rotated at a number of revolution less than that in Step S13 (i.e. at a rotating speed lower than that in Step S13) and an etching process is thereby performed for a predetermined time period (Step S14). - Subsequently, the
control part 11 controls thesuction part 62 to reduce the pressure in theinternal space 70 of thechamber 7 to a predetermined pressure lower than the normal pressure (preferably lower than the normal pressure, and not lower than about 15 kPa). Then, the supply of the first processing liquid from the first processingliquid supply part 3 is stopped, and thelamp 81 is extinguished and theheating part 8 stops heating thesubstrate 9. - Next, the
control part 11 controls the second processingliquid supply part 4 to continuously supply the second processing liquid from theupper pipe 75 onto theupper surface 91 of thesubstrate 9 being rotated in thechamber 7 in the reduced pressure atmosphere. The second processing liquid supplied onto the center portion of theupper surface 91 of thesubstrate 9 which is coated with the first processing liquid is spread toward the peripheral portion by the rotation of thesubstrate 9, and the first processing liquid on theupper surface 91 is pushed away from the edge of thesubstrate 9 to the outside thereof. Then, the first processing liquid on theupper surface 91 of thesubstrate 9 is replaced with the second processing liquid and the entireupper surface 91 is thereby coated with the second processing liquid (Step S15). The first processing liquid and the second processing liquid overflown from theupper surface 91 of thesubstrate 9 are sucked by thesuction part 62, to be thereby discharged to the outside of thechamber 7. Further, the second processing liquid is also supplied from thelower center pipe 76 onto the center portion of thelower surface 92 of thesubstrate 9 and spread toward the peripheral portion by the rotation of thesubstrate 9. - After the coating of the
upper surface 91 of thesubstrate 9 with the second processing liquid is finished, thecontrol part 11 controls thegas supply part 61 to increase the pressure in theinternal space 70 of thechamber 7 to a predetermined pressure higher than the normal pressure (preferably higher than the normal pressure, and not higher than a pressure higher than the normal pressure by about 0.1 MPa). While the pressure in theinternal space 70 increases and also after theinternal space 70 is brought into a predetermined pressurized atmosphere, the supply of the second processing liquid from the second processingliquid supply part 4 continues. Then, the second processing liquid which is deionized water is continuously supplied onto theupper surface 91 of thesubstrate 9 being rotated in theinternal space 70 in the pressurized atmosphere and a rinse process is performed for a predetermined time period (Step S16). - After the rinse process is finished, the supply of the second processing liquid from the second processing
liquid supply part 4 is stopped, and thecontrol part 11 controls thesuction part 62 to reduce the pressure in thechamber 70 of thechamber 7 to a predetermined pressure lower than the normal pressure (preferably lower than the normal pressure, and not lower than about 15 kPa). Then, with theinternal space 70 brought into a predetermined reduced pressure atmosphere, thecontrol part 11 controls the substraterotating mechanism 5 to increase the number of revolution of thesubstrate 9, and with high-speed rotation of thesubstrate 9, the second processing liquid is removed from thesubstrate 9 and a process of drying thesubstrate 9 is thereby performed (Step S17). While the drying process is performed on thesubstrate 9 under reduced pressure, the second processing liquid removed from thesubstrate 9 is sucked by thesuction part 62 and discharged to the outside of thechamber 7. As indicated by the two-dot chain line inFIG. 3 , while the drying process is performed on thesubstrate 9 under reduced pressure, thesubstrate 9 may be heated by theheating part 8 concurrently. This can promote drying of thesubstrate 9. - After the drying of the
substrate 9 is finished, the rotation of thesubstrate 9 is stopped (Step S18), and theinternal space 70 of thechamber 7 is bought back to normal pressure. After that, thechamber cover 73 is separated from thechamber sidewall 72, and thesubstrate 9 is unloaded from thechamber 7. - As discussed above, in the
substrate processing apparatus 1, thesubstrate 9 is heated by theheating part 8 with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere in Step S12. This suppresses the movement of the heat from thesubstrate 9 to the ambient gas and thesubstrate 9 can be heated in a shorter time as compared with under normal pressure. Further, since theheating part 8 includes thelamp 81 for heating thesubstrate 9 by emitting light toward thesubstrate 9, it is possible to simplify the configuration of thechamber 7 and the inside of thechamber 7. - In Step S13, with the
internal space 70 of thechamber 7 brought into the reduced pressure atmosphere, the first processing liquid is supplied onto theupper surface 91 of thesubstrate 9 while thesubstrate 9 is rotated, and therefore the first processing liquid can be quickly spread from the center portion to the peripheral portion on theupper surface 91 of thesubstrate 9. Theupper surface 91 of thesubstrate 9 can be thereby coated with the first processing liquid in a shorter time as compared with under normal pressure. Further, since thesuction part 62 sucks the first processing liquid from the vicinity of the edge of thesubstrate 9, the movement speed of the first processing liquid on theupper surface 91 of thesubstrate 9 can be increased. As a result, the coating of theupper surface 91 of thesubstrate 9 with the first processing liquid can be performed in a still shorter time, and the time required for the processing of thesubstrate 9 can be shortened. - In Step S13, as discussed above, since the amount of gas existing in a gap between fine patterns (hereinafter, referred to as a “pattern gap”) on the
substrate 9 decreases as compared with under normal pressure by bringing theinternal space 70 of thechamber 7 into the reduced pressure atmosphere, the first processing liquid supplied on theupper surface 91 of thesubstrate 9 can easily enter the pattern gap. It is thereby possible to appropriately perform an etching process in the pattern gap. Further, after theupper surface 91 of thesubstrate 9 is coated with the first processing liquid, by increasing the pressure in theinternal space 70 of thechamber 7, the first processing liquid is squeezed into the pattern gap. As a result, it is possible to cause the first processing liquid to more easily enter the pattern gap. Further, since the pressure in theinternal space 70 of thechamber 7 is increased to a pressure higher than the normal pressure and theinternal space 70 is thereby brought into the pressurized atmosphere, it is possible to cause the first processing liquid to much more easily enter the pattern gap. - In Step S14, with the
internal space 70 of thechamber 7 brought into the pressurized atmosphere, the first processing liquid is continuously supplied onto theupper surface 91 of thesubstrate 9 while thesubstrate 9 is rotated, and the etching process is thereby performed. This suppresses vaporization of the first processing liquid on thesubstrate 9 as compared with under normal pressure, and further suppresses a decrease in the temperature of thesubstrate 9 due to the heat of vaporization as it goes from the center portion of thesubstrate 9 toward the peripheral portion thereof As a result, it is possible to improve the uniformity in the temperature of theupper surface 91 of thesubstrate 9 being subjected to the etching process using the first processing liquid and improve the uniformity of etching over the entireupper surface 91 of thesubstrate 9. Further, the uniformity of etching over the entirelower surface 92 of thesubstrate 9 can be also improved. - As discussed above, the number of revolution of the
substrate 9 in the etching process performed on thesubstrate 9 in Step S14 is smaller than that of thesubstrate 9 in the process of coating theupper surface 91 of thesubstrate 9 with the first processing liquid in Step S13. This further suppresses vaporization of the first processing liquid from thesubstrate 9 and it is thereby possible to further improve the uniformity in the temperature of theupper surface 91 of thesubstrate 9 being subjected to the etching process. As a result, it is possible to further improve the uniformity of etching over the entireupper surface 91 of thesubstrate 9. - In Step S15, with the
internal space 70 of thechamber 7 brought into the reduced pressure atmosphere, the second processing liquid is supplied onto theupper surface 91 of thesubstrate 9 while thesubstrate 9 is rotated, and therefore the second processing liquid can be quickly spread from the center portion to the peripheral portion on theupper surface 91 of thesubstrate 9. The replacement of first processing liquid with the second processing liquid and the coating of theupper surface 91 of thesubstrate 9 with the second processing liquid can be performed in a shorter time as compared with under normal pressure. Further, since thesuction part 62 sucks the first processing liquid and the second processing liquid from the vicinity of the edge of thesubstrate 9, the replacement of the first processing liquid with the second processing liquid and the coating of theupper surface 91 of thesubstrate 9 with the second processing liquid can be performed in a still shorter time. - In the
substrate processing apparatus 1, as discussed above, after theupper surface 91 of thesubstrate 9 is coated with the second processing liquid, by increasing the pressure in theinternal space 70 of thechamber 7, the second processing liquid is squeezed into the pattern gap. As a result, the second processing liquid can easily enter the pattern gap and it is therefore possible to more reliably replace the first processing liquid with the second processing liquid. Further, since the pressure in theinternal space 70 of thechamber 7 is increased to a pressure higher than the normal pressure and theinternal space 70 is brought into the pressurized atmosphere, it is possible to cause the second processing liquid to much more easily enter the pattern gap. - In Step S16, with the
internal space 70 of thechamber 7 brought into the pressurized atmosphere, the second processing liquid is continuously supplied onto theupper surface 91 of thesubstrate 9 while thesubstrate 9 is rotated, and the rinse process is thereby performed. This suppresses vaporization of the second processing liquid on thesubstrate 9 as compared with under normal pressure, and further suppresses a decrease in the temperature of thesubstrate 9 due to the heat of vaporization as it goes from the center portion of thesubstrate 9 toward the peripheral portion thereof As a result, it is possible to improve the uniformity in the temperature of theupper surface 91 of thesubstrate 9 being subjected to the rinse process using the second processing liquid. Further, it is also possible to improve the uniformity of rinsing over the entirelower surface 92 of thesubstrate 9. - In Step S17, with the
internal space 70 of thechamber 7 brought into the reduced pressure atmosphere, the drying process is performed on thesubstrate 9 while thesubstrate 9 is rotated. It is thereby possible to perform the drying of thesubstrate 9 in a shorter time as compared with under normal pressure. - Next, discussion will be made on a substrate processing apparatus in accordance with the second preferred embodiment of the present invention.
FIG. 4 is a view showing a configuration of a substrate processing apparatus 1 a in accordance with the second preferred embodiment. In the substrate processing apparatus 1 a, the first processingliquid supply part 3 does not include thepump 32 and the second processingliquid supply part 4 does not include thepump 42. The configuration of the substrate processing apparatus 1 a other than the above is the same as that of thesubstrate processing apparatus 1 shown inFIG. 1 , and in the following discussion, constituent elements identical to those of thesubstrate processing apparatus 1 are represented by the same reference signs. -
FIG. 5 is a flowchart showing an operation flow of processing thesubstrate 9 in the substrate processing apparatus 1 a.FIG. 6 is a timing chart of processing thesubstrate 9. InFIG. 6 , like inFIG. 3 ,lines 101 to 104 represent the pressure in thechamber 7, the amount (i.e. the flow rate) of first processing liquid supplied from the first processingliquid supply part 3, the amount of second processing liquid supplied from the second processingliquid supply part 4, and ON/OFF of thelamp 81 of theheating part 8, respectively. - In the substrate processing apparatus 1 a, first, the
substrate 9 is loaded into thechamber 7, held by thesubstrate holding part 2, and started to rotate by the substrate rotating mechanism 5 (Step S21). Subsequently, with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere by thesuction part 62, theheating part 8 heats the substrate 9 (Step S22). - Next, the
control part 11 controls theupper changeover valve 751 and thelower changeover valve 761 to connect the first poolingpart 30 for pooling the first processing liquid therein and theinternal space 70 of thechamber 7. Thefirst pooling part 30 is open to the air, and by the pressure difference between theinternal space 70 in the reduced pressure atmosphere and the first poolingpart 30, the first processing liquid pooled in the first poolingpart 30 is continuously supplied onto the respective center portions of theupper surface 91 and thelower surface 92 of thesubstrate 9 through theupper pipe 75 and thelower center pipe 76. In other words, the supply of the first processing liquid from the first processingliquid supply part 3 is performed by the pressure difference between theinternal space 70 of thechamber 7 in the reduced pressure atmosphere and the outside of thechamber 7. The first processing liquid supplied onto the center portion of theupper surface 91 of thesubstrate 9 is spread toward the peripheral portion by the rotation of thesubstrate 9 and the entireupper surface 91 is coated with the first processing liquid (Step S23). The first processing liquid overflown from theupper surface 91 of thesubstrate 9 is sucked by thesuction part 62 controlled by thecontrol part 11 and discharged to the outside of thechamber 7. Further, the first processing liquid supplied onto the center portion of thelower surface 92 of thesubstrate 9 is also spread toward the peripheral portion by the rotation of thesubstrate 9. - After the coating of the
upper surface 91 of thesubstrate 9 with the first processing liquid is finished, thecontrol part 11 controls the degree of opening of theupper changeover valve 751 and thelower changeover valve 761 to reduce the flow rate of the first processing liquid supplied from the first processingliquid supply part 3. Further, thecontrol part 11 controls the substraterotating mechanism 5 to also reduce the number of revolution of thesubstrate 9. Then, the first processing liquid which is an etching solution is continuously supplied at a flow rate lower than that in Step S23 onto theupper surface 91 of thesubstrate 9 being rotated at a number of revolution less than that in Step S23 and an etching process is thereby performed for a predetermined time period in the reduced pressure atmosphere (Step S24). - After the etching process is finished, the
upper changeover valve 751 and thelower changeover valve 761 are controlled to connect thesecond pooling part 40 for pooling the second processing liquid therein and theinternal space 70 of thechamber 7. The supply of the first processing liquid is thereby stopped. Further, the heating of thesubstrate 9 by theheating part 8 is also stopped. Thesecond pooling part 40 is open to the air, and by the pressure difference between theinternal space 70 in the reduced pressure atmosphere and thesecond pooling part 40, the second processing liquid pooled in thesecond pooling part 40 is continuously supplied onto the respective center portions of theupper surface 91 and thelower surface 92 of thesubstrate 9 through theupper pipe 75 and thelower center pipe 76. In other words, the supply of the second processing liquid from the second processingliquid supply part 4 is performed by the pressure difference between theinternal space 70 of thechamber 7 in the reduced pressure atmosphere and the outside of thechamber 7. - The second processing liquid supplied onto the center portion of the
upper surface 91 of thesubstrate 9 is spread toward the peripheral portion by the rotation of thesubstrate 9, and the first processing liquid on theupper surface 91 of thesubstrate 9 is replaced with the second processing liquid and the entireupper surface 91 is thereby coated with the second processing liquid (Step S25). The first processing liquid and the second processing liquid overflown from theupper surface 91 of thesubstrate 9 are sucked by thesuction part 62, to be thereby discharged to the outside of thechamber 7. Further, the second processing liquid supplied onto the center portion of thelower surface 92 of thesubstrate 9 is also spread toward the peripheral portion by the rotation of thesubstrate 9. After that, the supply of the second processing liquid continues in theinternal space 70 in the reduced pressure atmosphere and a rinse process is performed for a predetermined time period (Step S26). - After the rinse process is finished, the supply of the second processing liquid from the second processing
liquid supply part 4 is stopped. Then, the number of revolution of thesubstrate 9 is increased, and with high-speed rotation of thesubstrate 9 in the reduced pressure atmosphere, the second processing liquid is removed from thesubstrate 9 and a process of drying thesubstrate 9 is thereby performed (Step S27). While the drying process is performed on thesubstrate 9 under reduced pressure, the second processing liquid removed from thesubstrate 9 is sucked by thesuction part 62 and discharged to the outside of thechamber 7. As indicated by the two-dot chain line inFIG. 6 , while the drying process is performed on thesubstrate 9 under reduced pressure, thesubstrate 9 may be heated by theheating part 8 concurrently. This can promote drying of thesubstrate 9. - After the drying of the
substrate 9 is finished, the rotation of thesubstrate 9 is stopped (Step S28), and theinternal space 70 of thechamber 7 is bought back to normal pressure by thegas supply part 61. After that, thechamber cover 73 is separated from thechamber sidewall 72, and thesubstrate 9 is unloaded from thechamber 7. - As discussed above, in the substrate processing apparatus 1 a, like in the first preferred embodiment, since the first processing liquid is supplied onto the
upper surface 91 of thesubstrate 9 with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere in Step S23, theupper surface 91 of thesubstrate 9 can be thereby coated with the first processing liquid in a shorter time as compared with under normal pressure. Further, since the second processing liquid is supplied onto theupper surface 91 of thesubstrate 9 with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere in Step S25, the replacement of first processing liquid with the second processing liquid and the coating of theupper surface 91 of thesubstrate 9 with the second processing liquid can be performed in a shorter time as compared with under normal pressure. - In the substrate processing apparatus 1 a, the supply of the first processing liquid from the first processing
liquid supply part 3 is performed by the pressure difference between theinternal space 70 of thechamber 7 in the reduced pressure atmosphere and the outside of thechamber 7. With this operation, the pump may be omitted from the first processingliquid supply part 3 and it is thereby possible to simplify the configuration of the substrate processing apparatus 1 a. Further, the supply of the second processing liquid from the second processingliquid supply part 4 is also performed by the pressure difference between theinternal space 70 of thechamber 7 in the reduced pressure atmosphere and the outside of thechamber 7. With this operation, the pump may be omitted from the second processingliquid supply part 4 and it is thereby possible to further simplify the configuration of the substrate processing apparatus 1 a. - The above-discussed preferred embodiments allow various variations.
- In the
substrate processing apparatus 1 of the first preferred embodiment, the etching process in Step S14 and the rinse process in Step S16 may be performed, for example, with theinternal space 70 of thechamber 7 brought to normal pressure. - In the
substrate processing apparatuses 1 and 1 a, after the rinse process (Steps S16 and S26) is finished, isopropyl alcohol (IPA) is supplied onto theupper surface 91 and thelower surface 92 of thesubstrate 9, and the drying process (Steps S17 and S27) may be performed after replacing the second processing liquid on thesubstrate 9 with the IPA. In the case where the IPA replacement is performed, it is preferable that the IPA should be supplied onto thesubstrate 9 with theinternal space 70 of thechamber 7 brought into the reduced pressure atmosphere. With this pressure reduction, like the replacement of the first processing liquid with the second processing liquid (Steps S15 and S25), the replacement of the second processing liquid with the IPA and the coating of theupper surface 91 of thesubstrate 9 with the IPA can be performed in a shorter time as compared with under normal pressure. Further, since thesuction part 62 sucks the second processing liquid and the IPA from the vicinity of the edge of thesubstrate 9, the replacement of the second processing liquid with the IPA and the coating of theupper surface 91 of thesubstrate 9 with the IPA can be performed in a still shorter time. - The first processing liquid and the second processing liquid are not necessarily limited to an etching solution and deionized water, respectively, but various other processing liquids may be used as the first processing liquid and the second processing liquid to perform various processings on the
substrate 9. The supply of the first processing liquid and the second processing liquid onto thelower surface 92 may be omitted. Further, in thesubstrate processing apparatus 1 and 1 a, the second processingliquid supply part 4 may be omitted and only the processing of thesubstrate 9, using the first processing liquid, may be performed. - The
heating part 8 is not limited to one which emits light toward thesubstrate 9 to heat thesubstrate 9. For example, a heater such as an electrically heated wire or the like may be provided as theheating part 8 inside the chamber bottom 71 and thechamber cover 73. Further, instead of thesuction part 62, a gas suction part for sucking gas in thechamber 7 and a processing liquid suction part for sucking the processing liquid in thechamber 7 may be provided separately. - In the
substrate processing apparatus 1 and 1 a, the processing may be performed on various kinds of substrates other than the semiconductor substrate. The configuration of thechamber 7 may be changed as appropriate in accordance with the shape of a substrate to be processed. - The configurations in the above-discussed preferred embodiments and variations may be combined as appropriate only if those do not conflict with one another.
- While the invention has been shown and described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is therefore understood that numerous modifications and variations can be devised without departing from the scope of the invention. This application claims priority benefit under 35 U.S.C. Section 119 of Japanese Patent Application No. 2012-073601 filed in the Japan Patent Office on Mar. 28, 2012, the entire disclosure of which is incorporated herein by reference.
- 1, 1 a Substrate processing apparatus
- 2 Substrate holding part
- 3 First processing liquid supply part
- 4 Second processing liquid supply part
- 5 Substrate rotating mechanism
- 7 Chamber
- 8 Heating part
- 9 Substrate
- 11 Control part
- 61 Gas supply part
- 62 Suction part
- 70 Internal space
- 91 Upper surface (of Substrate)
- S11 to S18, S21 to S28 Step
Claims (22)
1. A substrate processing apparatus for processing a substrate, comprising:
a substrate holding part for holding a substrate with a main surface thereof directed upward;
a processing liquid supply part for supplying a processing liquid onto a center portion of said main surface of said substrate;
a substrate rotating mechanism for rotating said substrate together with said substrate holding part;
a chamber for containing said substrate holding part in an internal space thereof;
a pressure changing part for changing pressure in said internal space of said chamber; and
a control part for controlling said processing liquid supply part, said substrate rotating mechanism, and said pressure changing part to bring said internal space of said chamber into a reduced pressure atmosphere and supply said processing liquid onto said main surface of said substrate while rotating said substrate in said reduced pressure atmosphere, to thereby coat said main surface of said substrate with said processing liquid.
2. The substrate processing apparatus according to claim 1 , wherein
a pattern is formed on said main surface of said substrate, and
said control part controls said processing liquid supply part, said substrate rotating mechanism, and said pressure changing part, after said main surface of said substrate is coated with said processing liquid, to increase pressure in said internal space of said chamber and continuously supply said processing liquid onto said main surface of said substrate while rotating said substrate, to thereby perform a predetermined processing.
3. The substrate processing apparatus according to claim 2 , wherein
said predetermined processing is performed in a pressurized atmosphere.
4. The substrate processing apparatus according to claim 2 , wherein
the number of revolutions of said substrate in performing said predetermined processing on said substrate is smaller than that of said substrate in coating said main surface of said substrate with said processing liquid.
5. The substrate processing apparatus according to claim 1 , further comprising:
a processing liquid discharge part for sucking said processing liquid overflown from said main surface of said substrate near an edge of said substrate to discharge said processing liquid to the outside of said chamber.
6. The substrate processing apparatus according to claim 1 , wherein
the supply of said processing liquid from said processing liquid supply part in said reduced pressure atmosphere of said internal space of said chamber is performed by a pressure difference between said internal space and the outside of said chamber.
7. The substrate processing apparatus according to claim 1 , further comprising:
another processing liquid supply part for supplying another processing liquid onto said center portion of said main surface of said substrate,
wherein said control part controls said processing liquid supply part, said another processing liquid supply part, said substrate rotating mechanism, and said pressure changing part to stop the supply of said processing liquid and bring said internal space of said chamber into said reduced pressure atmosphere, and then supply said another processing liquid onto said main surface of said substrate coated with said processing liquid to replace said processing liquid with said another processing liquid while rotating said substrate, to thereby coat said main surface of said substrate with said another processing liquid.
8. The substrate processing apparatus according to claim 7 , wherein
a pattern is formed on said main surface of said substrate, and
said control part controls said another processing liquid supply part, said substrate rotating mechanism, and said pressure changing part, after said main surface of said substrate is coated with said another processing liquid, to increase pressure in said internal space of said chamber and continuously supply said another processing liquid onto said main surface of said substrate while rotating said substrate, to thereby perform another processing.
9. The substrate processing apparatus according to claim 8 , wherein
said another processing is performed in a pressurized atmosphere.
10. The substrate processing apparatus according to claim 1 , further comprising:
a heating part for heating said substrate,
wherein said control part controls said pressure changing part and said heating part to bring said internal space of said chamber into said reduced pressure atmosphere and heat said substrate in said reduced pressure atmosphere.
11. The substrate processing apparatus according to claim 10 , wherein
said heating part emits light toward said substrate, to thereby heat said substrate.
12. The substrate processing apparatus according to claim 1 , wherein
said control part controls said pressure changing part and said substrate rotating mechanism to bring said internal space of said chamber into said reduced pressure atmosphere and rotate said substrate in said reduced pressure atmosphere, to thereby dry said substrate.
13. The substrate processing apparatus according to claim 1 , wherein
said processing liquid is an etching solution.
14. A substrate processing method of processing a substrate, comprising the steps of:
a) holding a substrate with a main surface thereof directed upward in an internal space of a chamber; and
b) bringing said internal space of said chamber into a reduced pressure atmosphere and supplying a processing liquid onto a center portion of said main surface of said substrate while rotating said substrate in said reduced pressure atmosphere, to thereby coat said main surface of said substrate with said processing liquid.
15. The substrate processing method according to claim 14 , wherein
a pattern is formed on said main surface of said substrate, and
said substrate processing method further comprising the step of:
c) increasing pressure in said internal space of said chamber and continuously supplying said processing liquid onto said main surface of said substrate coated with said processing liquid while rotating said substrate, to thereby perform a predetermined processing after said step b).
16. The substrate processing method according to claim 15 , wherein
said predetermined processing is performed in a pressurized atmosphere in said step c).
17. The substrate processing method according to claim 15 , wherein
the number of revolutions of said substrate in said step c) is smaller than that of said substrate in said step b).
18. The substrate processing method according to claim 14 , further comprising the step of:
d) stopping the supply of said processing liquid and bringing said internal space of said chamber into said reduced pressure atmosphere, and then supplying another processing liquid onto said main surface of said substrate coated with said processing liquid to replace said processing liquid with said another processing liquid while rotating said substrate, to thereby coat said main surface of said substrate with said another processing liquid after said step c).
19. The substrate processing method according to claim 18 , wherein
a pattern is formed on said main surface of said substrate, and
said substrate processing method further comprising the step of:
e) increasing pressure in said internal space of said chamber and continuously supplying said another processing liquid onto said main surface of said substrate coated with said another processing liquid while rotating said substrate, to thereby perform another processing after said step d).
20. The substrate processing method according to claim 19 , wherein
said another processing is performed in a pressurized atmosphere in said step e).
21. The substrate processing method according to claim 14 , further comprising the step of:
f) bringing said internal space of said chamber into said reduced pressure atmosphere and heating said substrate in said reduced pressure atmosphere before said step b).
22. The substrate processing method according to claim 14 , further comprising the step of:
g) bringing said internal space of said chamber into said reduced pressure atmosphere and drying said substrate while rotating said substrate in said reduced pressure atmosphere after said step b).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/854,949 US9640382B2 (en) | 2012-03-28 | 2015-09-15 | Substrate processing apparatus and substrate processing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-073601 | 2012-03-28 | ||
JP2012073601A JP5889691B2 (en) | 2012-03-28 | 2012-03-28 | Substrate processing apparatus and substrate processing method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/854,949 Division US9640382B2 (en) | 2012-03-28 | 2015-09-15 | Substrate processing apparatus and substrate processing method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20130260574A1 true US20130260574A1 (en) | 2013-10-03 |
Family
ID=49235594
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/853,016 Abandoned US20130260574A1 (en) | 2012-03-28 | 2013-03-28 | Substrate processing apparatus and substrate processing method |
US14/854,949 Active US9640382B2 (en) | 2012-03-28 | 2015-09-15 | Substrate processing apparatus and substrate processing method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/854,949 Active US9640382B2 (en) | 2012-03-28 | 2015-09-15 | Substrate processing apparatus and substrate processing method |
Country Status (5)
Country | Link |
---|---|
US (2) | US20130260574A1 (en) |
JP (1) | JP5889691B2 (en) |
KR (5) | KR101513794B1 (en) |
CN (1) | CN103367202B (en) |
TW (1) | TWI520250B (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9640382B2 (en) | 2012-03-28 | 2017-05-02 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US10029332B2 (en) | 2014-09-04 | 2018-07-24 | Samsung Electronics Co., Ltd. | Spot heater and device for cleaning wafer using the same |
TWI631609B (en) * | 2016-02-25 | 2018-08-01 | 芝浦機械電子裝置股份有限公司 | Substrate processing device, substrate processing method, and substrate manufacturing method |
US10103020B2 (en) | 2014-03-13 | 2018-10-16 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
US10804121B2 (en) | 2016-02-25 | 2020-10-13 | Shibaura Mechatronics Corporation | Substrate treatment apparatus, substrate treatment method, and method for manufacturing substrate |
US20210132637A1 (en) * | 2019-11-04 | 2021-05-06 | Tokyo Electron Limited | Methods and systems to monitor, control, and synchronize dispense systems |
US11217441B2 (en) * | 2014-03-25 | 2022-01-04 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US20220108897A1 (en) * | 2019-04-23 | 2022-04-07 | Zeus Co., Ltd. | Etching device |
US11804387B2 (en) | 2015-03-27 | 2023-10-31 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5926086B2 (en) * | 2012-03-28 | 2016-05-25 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
JP6270270B2 (en) * | 2014-03-17 | 2018-01-31 | 株式会社Screenホールディングス | Substrate processing method and substrate processing apparatus |
JP6118758B2 (en) * | 2014-05-01 | 2017-04-19 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program |
US10490426B2 (en) | 2014-08-26 | 2019-11-26 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
US10095889B2 (en) * | 2016-03-04 | 2018-10-09 | Altera Corporation | Techniques for protecting security features of integrated circuits |
JP6739285B2 (en) * | 2016-08-24 | 2020-08-12 | 東京エレクトロン株式会社 | Substrate processing equipment |
DE102017212887A1 (en) | 2017-07-26 | 2019-01-31 | Gebr. Schmid Gmbh | Method, device and system for printed circuit board production |
CN107333398B (en) * | 2017-08-30 | 2019-07-30 | 深圳市博敏兴电子有限公司 | Large scale circuit board etching method and apparatus |
JP6554516B2 (en) * | 2017-08-31 | 2019-07-31 | 東京応化工業株式会社 | Substrate heating apparatus, substrate processing system, and substrate heating method |
KR102156427B1 (en) | 2019-02-26 | 2020-09-16 | 아우토리브 디벨롭먼트 아베 | Airbag apparatus of vehicle |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4871417A (en) * | 1986-07-04 | 1989-10-03 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for surface treating of substrates |
US5678116A (en) * | 1994-04-06 | 1997-10-14 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for drying a substrate having a resist film with a miniaturized pattern |
US6793769B2 (en) * | 2001-10-30 | 2004-09-21 | Dainippon Screen Mfg. Co. Ltd. | Substrate processing apparatus |
US20080006302A1 (en) * | 2006-07-06 | 2008-01-10 | Hiroyuki Araki | Substrate treatment method and substrate treatment apparatus |
US20130260570A1 (en) * | 2012-03-28 | 2013-10-03 | Dainippon Screen Mfg. Co., Ltd | Substrate processing apparatus and substrate processing method |
US20140041689A1 (en) * | 2012-08-09 | 2014-02-13 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20140060423A1 (en) * | 2012-08-31 | 2014-03-06 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0322428A (en) | 1989-06-19 | 1991-01-30 | Nec Kyushu Ltd | Manufacturing apparatus for semiconductor device |
JPH0574754A (en) * | 1991-09-13 | 1993-03-26 | Nec Kyushu Ltd | Etching system |
JP2906103B2 (en) | 1993-03-26 | 1999-06-14 | 東京エレクトロン株式会社 | Processing equipment |
JPH0786128A (en) * | 1993-09-13 | 1995-03-31 | Fujitsu Ltd | Formation of electrical characteristic film and spin coater therefor |
JP3099053B2 (en) | 1993-10-15 | 2000-10-16 | 東京エレクトロン株式会社 | Vacuum equipment |
JPH09246156A (en) | 1996-03-08 | 1997-09-19 | Hitachi Ltd | Method and apparatus for development of resist |
KR100488753B1 (en) | 2001-07-23 | 2005-05-11 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate treating method and apparatus |
JP4942263B2 (en) | 2001-08-31 | 2012-05-30 | ラムリサーチ株式会社 | Cleaning device |
US6706641B2 (en) | 2001-09-13 | 2004-03-16 | Micell Technologies, Inc. | Spray member and method for using the same |
JP2003168638A (en) * | 2001-11-29 | 2003-06-13 | Matsushita Electric Ind Co Ltd | Method of manufacturing electronic device and spin coater |
JP4543617B2 (en) | 2002-04-22 | 2010-09-15 | セイコーエプソン株式会社 | Active matrix substrate manufacturing method, electro-optical device manufacturing method, electronic device manufacturing method, active matrix substrate manufacturing device, electro-optical device manufacturing device, and electric device manufacturing device |
JP2004122074A (en) * | 2002-10-07 | 2004-04-22 | Matsushita Electric Ind Co Ltd | Substrate washing method, substrate washing device, and production method of electronic device |
JP4037291B2 (en) * | 2003-03-11 | 2008-01-23 | 松下電器産業株式会社 | Semiconductor device manufacturing method and manufacturing apparatus |
JP2005150332A (en) | 2003-11-14 | 2005-06-09 | Sony Corp | Etching method |
JP2005191251A (en) * | 2003-12-25 | 2005-07-14 | Aqua Science Kk | Device and method for object processing |
JP4542869B2 (en) * | 2004-10-19 | 2010-09-15 | 東京エレクトロン株式会社 | Processing method and computer program for implementing the processing method |
JP2008085150A (en) * | 2006-09-28 | 2008-04-10 | Kurita Water Ind Ltd | Cleaning method |
KR101074460B1 (en) | 2009-07-31 | 2011-10-18 | 세메스 주식회사 | Apparatus and method for treating substrate |
JP2012012647A (en) | 2010-06-30 | 2012-01-19 | Tokyo Electron Ltd | Metal-film forming device |
JP5648053B2 (en) * | 2010-06-30 | 2015-01-07 | セントラル硝子株式会社 | Chemical solution for forming wafer pattern protective film, method for preparing chemical solution, and wafer processing method |
JP5889691B2 (en) | 2012-03-28 | 2016-03-22 | 株式会社Screenホールディングス | Substrate processing apparatus and substrate processing method |
-
2012
- 2012-03-28 JP JP2012073601A patent/JP5889691B2/en active Active
-
2013
- 2013-03-14 CN CN201310081025.4A patent/CN103367202B/en active Active
- 2013-03-15 KR KR1020130027821A patent/KR101513794B1/en active IP Right Grant
- 2013-03-25 TW TW102110465A patent/TWI520250B/en active
- 2013-03-28 US US13/853,016 patent/US20130260574A1/en not_active Abandoned
-
2014
- 2014-11-03 KR KR1020140151091A patent/KR101540188B1/en active IP Right Grant
- 2014-11-03 KR KR1020140151092A patent/KR101546633B1/en active IP Right Grant
- 2014-11-03 KR KR1020140151089A patent/KR101546632B1/en active IP Right Grant
- 2014-11-03 KR KR1020140151087A patent/KR101546631B1/en active IP Right Grant
-
2015
- 2015-09-15 US US14/854,949 patent/US9640382B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4871417A (en) * | 1986-07-04 | 1989-10-03 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for surface treating of substrates |
US5678116A (en) * | 1994-04-06 | 1997-10-14 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for drying a substrate having a resist film with a miniaturized pattern |
US6793769B2 (en) * | 2001-10-30 | 2004-09-21 | Dainippon Screen Mfg. Co. Ltd. | Substrate processing apparatus |
US20080006302A1 (en) * | 2006-07-06 | 2008-01-10 | Hiroyuki Araki | Substrate treatment method and substrate treatment apparatus |
US20130260570A1 (en) * | 2012-03-28 | 2013-10-03 | Dainippon Screen Mfg. Co., Ltd | Substrate processing apparatus and substrate processing method |
US20140041689A1 (en) * | 2012-08-09 | 2014-02-13 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method |
US20140060423A1 (en) * | 2012-08-31 | 2014-03-06 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9640382B2 (en) | 2012-03-28 | 2017-05-02 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus and substrate processing method |
US10103020B2 (en) | 2014-03-13 | 2018-10-16 | SCREEN Holdings Co., Ltd. | Substrate processing apparatus |
US11217441B2 (en) * | 2014-03-25 | 2022-01-04 | SCREEN Holdings Co., Ltd. | Substrate treatment method and substrate treatment apparatus |
US10029332B2 (en) | 2014-09-04 | 2018-07-24 | Samsung Electronics Co., Ltd. | Spot heater and device for cleaning wafer using the same |
US10576582B2 (en) | 2014-09-04 | 2020-03-03 | Samsung Electronics Co., Ltd. | Spot heater and device for cleaning wafer using the same |
US11804387B2 (en) | 2015-03-27 | 2023-10-31 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method |
TWI631609B (en) * | 2016-02-25 | 2018-08-01 | 芝浦機械電子裝置股份有限公司 | Substrate processing device, substrate processing method, and substrate manufacturing method |
US10804121B2 (en) | 2016-02-25 | 2020-10-13 | Shibaura Mechatronics Corporation | Substrate treatment apparatus, substrate treatment method, and method for manufacturing substrate |
US20220108897A1 (en) * | 2019-04-23 | 2022-04-07 | Zeus Co., Ltd. | Etching device |
US20210132637A1 (en) * | 2019-11-04 | 2021-05-06 | Tokyo Electron Limited | Methods and systems to monitor, control, and synchronize dispense systems |
Also Published As
Publication number | Publication date |
---|---|
US20160005592A1 (en) | 2016-01-07 |
KR101546631B1 (en) | 2015-08-21 |
CN103367202B (en) | 2016-08-17 |
KR20130111303A (en) | 2013-10-10 |
JP2013207042A (en) | 2013-10-07 |
KR20140144164A (en) | 2014-12-18 |
KR101546633B1 (en) | 2015-08-21 |
KR20140144163A (en) | 2014-12-18 |
KR101540188B1 (en) | 2015-07-28 |
KR20140144161A (en) | 2014-12-18 |
KR20140144162A (en) | 2014-12-18 |
KR101513794B1 (en) | 2015-04-20 |
TWI520250B (en) | 2016-02-01 |
KR101546632B1 (en) | 2015-08-21 |
CN103367202A (en) | 2013-10-23 |
TW201351538A (en) | 2013-12-16 |
JP5889691B2 (en) | 2016-03-22 |
US9640382B2 (en) | 2017-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9640382B2 (en) | Substrate processing apparatus and substrate processing method | |
US9997378B2 (en) | Substrate processing apparatus and substrate processing method | |
US9307653B2 (en) | Substrate cleaning method, substrate cleaning apparatus and storage medium for cleaning substrate | |
US11621176B2 (en) | Substrate processing apparatus | |
US20140273498A1 (en) | Substrate processing apparatus and substrate processing method | |
US20140041689A1 (en) | Substrate processing apparatus and substrate processing method | |
US20150162224A1 (en) | Substrate treatment method and substrate treatment apparatus | |
WO2014129259A1 (en) | Film-forming method, computer storage medium, and film-forming system | |
US10903092B2 (en) | Substrate processing apparatus and substrate processing method | |
US20140227883A1 (en) | Substrate processing apparatus and substrate processing method | |
TW201934211A (en) | Substrate processing method and substrate processing apparatus | |
JP2013149934A (en) | Substrate processing method and substrate processing apparatus | |
JP2004186419A (en) | Reduced pressure drying apparatus, applying film formation equipment, and method for reduced pressure drying | |
JP2003332213A (en) | Wet processing device and method | |
WO2012073377A1 (en) | Spin-coat device | |
JP2018164118A (en) | Substrate processing apparatus and substrate processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: DAINIPPON SCREEN MFG. CO., LTD, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MASUHARA, HIROFUMI;ARAI, KENICHIRO;MIYAGI, MASAHIRO;AND OTHERS;SIGNING DATES FROM 20130520 TO 20130531;REEL/FRAME:030627/0015 |
|
AS | Assignment |
Owner name: SCREEN HOLDINGS CO., LTD., JAPAN Free format text: CHANGE OF NAME;ASSIGNOR:DAINIPPON SCREEN MFG. CO., LTD.;REEL/FRAME:035132/0773 Effective date: 20141001 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |