US20150048463A1 - Package device for microelectromechanical inertial sensor - Google Patents

Package device for microelectromechanical inertial sensor Download PDF

Info

Publication number
US20150048463A1
US20150048463A1 US13/968,830 US201313968830A US2015048463A1 US 20150048463 A1 US20150048463 A1 US 20150048463A1 US 201313968830 A US201313968830 A US 201313968830A US 2015048463 A1 US2015048463 A1 US 2015048463A1
Authority
US
United States
Prior art keywords
microelectromechanical
inertial sensor
chip
ceramic substrate
package device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/968,830
Inventor
Chien-Wei Chiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TXC Corp
Original Assignee
TXC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TXC Corp filed Critical TXC Corp
Priority to US13/968,830 priority Critical patent/US20150048463A1/en
Assigned to TXC CORPORATION reassignment TXC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHIANG, CHIEN-WEI
Publication of US20150048463A1 publication Critical patent/US20150048463A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Definitions

  • the abovementioned conventional complicated package structure of a microelectromechanical inertial sensor has a higher package cost.
  • the electric connection thereof is realized by a wire-bonding technology.
  • the microelectromechanical chip is verified to operate normally after wire-bonding, the succeeding resin molding process may damage the bonding wires and lower the yield thereof
  • its expensive manufacturing process caused the higher fabrication cost.
  • FIG. 2 schematically shows another conventional package structure of a microelectromechanical inertial sensor
  • the present invention is characterized in that the ceramic substrate has two accommodation spaces where an MEMS chip and an IC chip are respectively mounted, and that the MEMS chip and the IC chip are mounted in a flip-chip technology, and that a metal top cover is used to seal the MEMS chip.
  • the present invention can raise the reliability and yield of the products.
  • a metallic ring 41 and the top cover 42 are arranged on the top of the H-shaped substrate 30 to seal the MEMS chip 36 and keep the upper accommodation space 32 in a highly hermetic state or a vacuum state, whereby the microelectromechanical component 38 is able to operate normally and exempted from interference.
  • the IC chip 44 is arranged inside the lower accommodation space 34 upward from the bottom of the H-shaped substrate 30 in a flip-chip method and electrically connected with the interconnect metal lines by a plurality of second electric-conduction bumps 46 .
  • a plurality of electric-conduction pads 48 is arranged on the perimeter of the bottom surface of the H-shaped substrate 30 .
  • FIG. 7 schematically shows a package device for a microelectromechanical inertial sensor according to another embodiment of the present invention.
  • the package device for a microelectromechanical inertial sensor comprises a H-shaped ceramic substrate 30 , an MEMS chip 36 , a top cover 42 , and an IC chip 44 .
  • the H-shaped ceramic substrate 30 has an upper accommodation space 32 and a lower accommodation space 34 , which are respectively formed on the upper side and lower side of the H-shaped ceramic substrate 30 .
  • the H-shaped ceramic substrate 30 is formed via stacking several layers of substrates having a plurality of interconnect metal lines (not shown in the drawings) thereinside. At least one microelectromechanical component 38 has been fabricated in the MEMS chip 36 beforehand.
  • the MEMS chip 36 is arranged inside the upper accommodation space 32 downward from the top of the H-shaped substrate 30 and electrically connected with the interconnect metal lines by a plurality of first bonding wires 39 .
  • a metallic ring 41 and the top cover 42 are arranged on the top of the H-shaped ceramic substrate 30 to seal the MEMS chip 36 and keep the upper accommodation space 32 in a highly hermetic state or a vacuum state.
  • the IC chip 44 is arranged inside the lower accommodation space 34 upward from the bottom of the H-shaped substrate 30 and electrically connected with the interconnect metal lines by a plurality of second bonding wires 45 .
  • a plurality of electric-conduction pads 48 is arranged on the perimeter of the bottom surface of the H-shaped ceramic substrate 30 .
  • the MEMS chip will be tested and classified after the hermetic or vacuum environment has been established inside the upper accommodation space.
  • the package process will not be continued unless the MEMS chip in the ceramic substrate has been qualified. Therefore, the present invention can decrease the defective rate, raise the yield, and reduce the fabrication cost.

Abstract

A package device for a microelectromechanical inertial sensor comprises a ceramic substrate having an upper accommodation space and a lower accommodation and having a plurality of interconnect metal lines thereinside; a microelectromechanical system (MEMS) chip mounted inside the upper accommodation of the ceramic substrate and electrically connected with the interconnect metal lines; a top cover arranged on the ceramic substrate and sealing the upper accommodation space; and an integrated circuit (IC) chip mounted inside the lower accommodation space and electrically connected with the interconnect metal lines. The present invention can improve the reliability of components, increase the yield and decrease the fabrication cost.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a package structure for a sensor, particularly to a package device for a microelectromechanical inertial sensor.
  • 2. Description of the Related Art
  • In semiconductor industry, the micromaching technology is used to fabricate various micro sensors and micro actuators. Further, the micro sensor or micro actuator may be integrated with a micro electronic circuit to form MEMS (microelectromechanical system). The fabrication of MEMS components involves many fields of technologies. However, most MEMS components, such as inertial sensors, contain a floating structure fabricated by the micromachining technology and only having few support points to increase sensitivity.
  • Refer to FIG. 1 for a conventional package structure of a microelectromechanical inertial sensor. In the conventional package structure of a microelectromechanical inertial sensor, an IC (Integrated Circuit) chip 12 is arranged on a substrate 10. The IC chip 12 is electrically connected with the wiring of the substrate 10 by a plurality of bonding wires 14. A microelectromechanical chip 16 having a microelectromechanical component 18 is arranged on the IC chip 12 and electrically connected with the IC chip 12 by a plurality of bonding wires 20. A silicon top cover 22 covers the microelectromechanical chip 16 and hermetic seals the microelectromechanical component 18. Then, a sealing resin 24 wraps the IC chip 12, the microelectromechanical chip 16, the silicon top cover 22, and the bonding wires 14 and 20. Thereby is completed the package structure of the microelectromechanical inertial sensor.
  • Refer to FIG. 2 for another conventional package structure of a microelectromechanical inertial sensor. In the package structure of the microelectromechanical inertial sensor, an IC (Integrated Circuit) chip 54 is arranged on a substrate 50 and mounted in a groove 52 of the substrate 50. The IC chip 54 is electrically connected with the wiring of the substrate 50 by a plurality of flip-chip bumps 56. A microelectromechanical chip 58 having a microelectromechanical component 60 is arranged on the IC chip 54 and electrically connected with the IC chip 54 by a plurality of bonding wires 62. A silicon cover 61 hermetic seals the microelectromechanical component 60 and a top cover covers the microelectromechanical chip 58 and covers the microelectromechanical chip 58, the IC chip 54, bumps 56, and the bonding wires 62. Thereby is completed the package structure of the microelectromechanical inertial sensor.
  • Refer to FIG. 3 for further another conventional package structure of a microelectromechanical inertial sensor. In the package structure of the microelectromechanical inertial sensor, a microelectromechanical and IC (Integrated Circuit) chip 64 having a microelectromechanical component 65 is arranged on a substrate 66 and mounted in a groove 68 of the substrate 66. The chip 64 is electrically connected with the wiring of the substrate 66 by a plurality of bonding wires 70. A top cover 72 covers the chip 64 and hermetic seals the chip 64, and the bonding wires 62. Thereby is completed the package structure of the microelectromechanical inertial sensor.
  • However, the abovementioned conventional complicated package structure of a microelectromechanical inertial sensor has a higher package cost. The electric connection thereof is realized by a wire-bonding technology. Although the microelectromechanical chip is verified to operate normally after wire-bonding, the succeeding resin molding process may damage the bonding wires and lower the yield thereof Furthermore, in order to reduce the cost of packaging and design special integrated process, its expensive manufacturing process caused the higher fabrication cost.
  • Accordingly, the present invention proposes a novel package device for a microelectromechanical inertial sensor to overcome the problems (such as the high defective rate) of the conventional microelectromechanical package technology without increasing the fabrication cost.
    • SUMMARY OF THE INVENTION
  • The primary objective of the present invention is to provide a package device for a microelectromechanical inertial sensor to raise the reliability and yield of the products and lower the fabrication cost thereof.
  • Another objective of the present invention is to provide a package device for a microelectromechanical inertial sensor, wherein the IC chip is mounted after the test of the MEMS chip so as to decrease the defective rate of the products.
  • To achieve the abovementioned objectives, the present invention proposes a package device for a microelectromechanical inertial sensor, which comprises a ceramic substrate, an MEMS chip, a top cover, and an IC chip. The ceramic substrate is a high-temperature or low-temperature co-fired multilayer ceramic substrate. The ceramic substrate has an upper accommodation space and a lower accommodation space. The ceramic substrate also has a plurality of interconnect metal lines thereinside. The MEMS chip has microelectromechanical components and is mounted in the upper accommodation space and electrically connected with the ceramic substrate. The IC chip is mounted in the lower accommodation space and electrically connected with the ceramic substrate . The MEMS chip is electrically connected with the IC chip by the interconnect metal lines of the ceramic substrate. The top cover and a metallic ring are arranged on the ceramic substrate to seal the MEMS components and keep the upper accommodation space in an hermetic state or a vacuum state. Compared with the resin-based package, the ceramic substrate-based package has lower residual stress and higher yield.
  • In one embodiment, the ceramic substrate is an H-shaped substrate; the MEMS chip is mounted in the upper accommodation space thereof, and the IC chip is mounted in the lower accommodation space thereof.
  • Below, embodiments are described in detail in cooperation with the attached drawings to make easily understood the objectives, technical contents, characteristics and accomplishments of the present invention.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 schematically shows a conventional package structure of a microelectromechanical inertial sensor;
  • FIG. 2 schematically shows another conventional package structure of a microelectromechanical inertial sensor;
  • FIG. 3 schematically shows a further another conventional package structure of a microelectromechanical inertial sensor;
  • FIG. 4 schematically shows a package device for a microelectromechanical inertial sensor according to one embodiment of the present invention;
  • FIG. 5 shows a perspective exploded view of the package device shown in FIG. 4.
  • FIG. 6 schematically shows electric-conduction pads arranged on the bottom surface of the ceramic substrate according to one embodiment of the present invention; and
  • FIG. 7 schematically shows a package device for a microelectromechanical inertial sensor according to another embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The present invention is characterized in that the ceramic substrate has two accommodation spaces where an MEMS chip and an IC chip are respectively mounted, and that the MEMS chip and the IC chip are mounted in a flip-chip technology, and that a metal top cover is used to seal the MEMS chip. Thereby, the present invention can raise the reliability and yield of the products.
  • Refer to FIG. 4 and FIG. 5. FIG. 4 schematically shows a package device for a microelectromechanical inertial sensor according to one embodiment of the present invention. FIG. 5 shows a perspective exploded view of the package device shown in FIG. 4. In the embodiment shown in FIG. 4 and FIG. 5, the package device for a microelectromechanical inertial sensor comprises a ceramic substrate, an MEMS chip 36, a top cover 42, and an IC chip 44. The ceramic substrate is a high-temperature or low-temperature co-fired multilayer ceramic substrate. In this embodiment, the ceramic substrate is exemplified by an H-shaped substrate 30. The H-shaped substrate 30 has an upper accommodation space 32 and a lower accommodation space 34, which are respectively formed on the upper side and lower side of the H-shaped substrate 30. In this embodiment, the H-shaped substrate 30 is formed via stacking several layers of substrates having a plurality of interconnect metal lines (not shown in the drawings) thereinside. At least one microelectromechanical component 38 has been fabricated in the MEMS chip 36 beforehand. The MEMS chip 36 is arranged inside the upper accommodation space 32 downward from the top of the H-shaped substrate 30 in a flip-chip method and electrically connected with the interconnect metal lines by a plurality of first electric-conduction bumps 40. A metallic ring 41 and the top cover 42 (preferably made of a metallic material) are arranged on the top of the H-shaped substrate 30 to seal the MEMS chip 36 and keep the upper accommodation space 32 in a highly hermetic state or a vacuum state, whereby the microelectromechanical component 38 is able to operate normally and exempted from interference. The IC chip 44 is arranged inside the lower accommodation space 34 upward from the bottom of the H-shaped substrate 30 in a flip-chip method and electrically connected with the interconnect metal lines by a plurality of second electric-conduction bumps 46. A plurality of electric-conduction pads 48 is arranged on the perimeter of the bottom surface of the H-shaped substrate 30. In the present invention, the H-shaped substrate 30 may be designed to have different quantities and different distribution patterns of the electric-conduction pads 48 according to different requirements. For example, there are six electric-conduction pads 48 in the embodiment shown in FIG. 6. However, the present invention is not limited by the embodiment shown in FIG. 6. The electric-conduction pads 48 are electrically connected with the interconnect metal lines, functioning as contact points to the external printed circuit board for signal communication.
  • In addition to the abovementioned embodiment, electrically connection structures have other forms in other embodiments. Refer to FIG. 7. FIG. 7 schematically shows a package device for a microelectromechanical inertial sensor according to another embodiment of the present invention.
  • In the embodiment shown in FIG. 7, the package device for a microelectromechanical inertial sensor comprises a H-shaped ceramic substrate 30, an MEMS chip 36, a top cover 42, and an IC chip 44. Similarly, the H-shaped ceramic substrate 30 has an upper accommodation space 32 and a lower accommodation space 34, which are respectively formed on the upper side and lower side of the H-shaped ceramic substrate 30. In this embodiment, the H-shaped ceramic substrate 30 is formed via stacking several layers of substrates having a plurality of interconnect metal lines (not shown in the drawings) thereinside. At least one microelectromechanical component 38 has been fabricated in the MEMS chip 36 beforehand. The MEMS chip 36 is arranged inside the upper accommodation space 32 downward from the top of the H-shaped substrate 30 and electrically connected with the interconnect metal lines by a plurality of first bonding wires 39. A metallic ring 41 and the top cover 42 are arranged on the top of the H-shaped ceramic substrate 30 to seal the MEMS chip 36 and keep the upper accommodation space 32 in a highly hermetic state or a vacuum state. The IC chip 44 is arranged inside the lower accommodation space 34 upward from the bottom of the H-shaped substrate 30 and electrically connected with the interconnect metal lines by a plurality of second bonding wires 45. A plurality of electric-conduction pads 48 is arranged on the perimeter of the bottom surface of the H-shaped ceramic substrate 30. In the present invention, the MEMS chip will be tested and classified after the hermetic or vacuum environment has been established inside the upper accommodation space. The package process will not be continued unless the MEMS chip in the ceramic substrate has been qualified. Therefore, the present invention can decrease the defective rate, raise the yield, and reduce the fabrication cost.
  • The embodiments described above are to demonstrate the technical thought and characteristics of the present invention to enable the persons skilled in the art to understand, make, and use the present invention. However, these embodiments are not intended to limit the scope of the present invention. Any equivalent modification or variation according to the spirit of the present invention is to be also included within the scope of the present invention.

Claims (10)

What is claimed is:
1. A package device for a microelectromechanical inertial sensor, comprising
a ceramic substrate having an upper accommodation space and a lower accommodation and having a plurality of interconnect metal lines thereinside;
a microelectromechanical system (MEMS) chip having at least one microelectromechanical component, mounted inside said upper accommodation of said ceramic substrate and electrically connected with said interconnect metal lines;
a top cover arranged on said ceramic substrate and sealing said upper accommodation space; and
an integrated circuit (IC) chip mounted inside said lower accommodation space and electrically connected with said interconnect metal lines.
2. The package device for a microelectromechanical inertial sensor according to claim 1, wherein said ceramic substrate is an H-shaped substrate, and wherein said MEMS chip is mounted in said upper accommodation space in a flip-chip method, and wherein said IC chip is mounted in said lower accommodation space in a flip-chip method.
3. The package device for a microelectromechanical inertial sensor according to claim 2, wherein said ceramic substrate is formed via stacking a plurality of layers of substrates.
4. The package device for a microelectromechanical inertial sensor according to claim 2, wherein said microelectromechanical system (MEMS) chip electrically connected with said interconnect metal lines by a plurality of first electric-conduction bumps or first bonding wires.
5. The package device for a microelectromechanical inertial sensor according to claim 4, wherein said integrated circuit (IC) chip mounted inside said lower accommodation space and electrically connected with said interconnect metal lines by a plurality of second electric-conduction bumps or second bonding wires.
6. The package device for a microelectromechanical inertial sensor according to claim 1, wherein said top cover is a metallic top cover.
7. The package device for a microelectromechanical inertial sensor according to claim 1, wherein said upper accommodation space is hermetic sealed to have a vacuum state.
8. The package device for a microelectromechanical inertial sensor according to claim 1 further comprising a plurality of electric-conduction pads arranged on a bottom surface of said ceramic substrate and electrically connected with said interconnect metal lines to function as contact points for external communication.
9. The package device for a microelectromechanical inertial sensor according to claim 1, wherein said ceramic substrate is made of a high-temperature co-fired multilayer ceramic or a low-temperature co-fired multilayer ceramic.
10. The package device for a microelectromechanical inertial sensor according to claim 6, wherein a metallic ring is arranged between said ceramic substrate and said top cover.
US13/968,830 2013-08-16 2013-08-16 Package device for microelectromechanical inertial sensor Abandoned US20150048463A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/968,830 US20150048463A1 (en) 2013-08-16 2013-08-16 Package device for microelectromechanical inertial sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/968,830 US20150048463A1 (en) 2013-08-16 2013-08-16 Package device for microelectromechanical inertial sensor

Publications (1)

Publication Number Publication Date
US20150048463A1 true US20150048463A1 (en) 2015-02-19

Family

ID=52466237

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/968,830 Abandoned US20150048463A1 (en) 2013-08-16 2013-08-16 Package device for microelectromechanical inertial sensor

Country Status (1)

Country Link
US (1) US20150048463A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220288599A1 (en) * 2019-08-23 2022-09-15 Bühler AG Roller with a sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US20060220210A1 (en) * 2005-03-31 2006-10-05 Stats Chippac Ltd. Semiconductor assembly including chip scale package and second substrate and having exposed substrate surfaces on upper and lower sides
US20090151972A1 (en) * 2004-05-28 2009-06-18 Stellar Microdevices, Inc. Cold weld hermetic mems package and method of manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US20090151972A1 (en) * 2004-05-28 2009-06-18 Stellar Microdevices, Inc. Cold weld hermetic mems package and method of manufacture
US20060220210A1 (en) * 2005-03-31 2006-10-05 Stats Chippac Ltd. Semiconductor assembly including chip scale package and second substrate and having exposed substrate surfaces on upper and lower sides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220288599A1 (en) * 2019-08-23 2022-09-15 Bühler AG Roller with a sensor

Similar Documents

Publication Publication Date Title
US10041847B2 (en) Various stress free sensor packages using wafer level supporting die and air gap technique
US8154119B2 (en) Compliant spring interposer for wafer level three dimensional (3D) integration and method of manufacturing
US9663350B2 (en) Stress isolated differential pressure sensor
US20160159642A1 (en) Stress isolated mems device with asic as cap
CN101799344B (en) Packaging structure of silicon pressure sensor
US10435290B2 (en) Wafer level package for a MEMS sensor device and corresponding manufacturing process
US20140130595A1 (en) Monolithic sensor package
TWI518844B (en) Package structure and manufacturing method thereof
US9533878B2 (en) Low stress compact device packages
CN105217562A (en) Micro mechanical sensor device
US9726689B1 (en) Wafer level micro-electro-mechanical systems package with accelerometer and gyroscope
US9725309B2 (en) Micromechanical sensor device and corresponding manufacturing method
US9073750B2 (en) Manufacturing method of micro-electro-mechanical system device and micro-electro-mechanical system device made thereby
US20150048463A1 (en) Package device for microelectromechanical inertial sensor
US20150217991A1 (en) Mems device with split pad package
EP2994412B1 (en) A microelectromechanical device and a method of manufacturing
US20150183637A1 (en) Compact electronic package with mems ic and related methods
US9362257B2 (en) Mirco-electro-mechanical system module and manufacturing method thereof
TWI677058B (en) Chip packages and methods for forming the same
CN110104606A (en) A kind of encapsulating structure of MEMS infrared sensor
US20160054352A1 (en) Multi-axis sensor and method for manufacturing the same
WO2017208642A1 (en) Resin package

Legal Events

Date Code Title Description
AS Assignment

Owner name: TXC CORPORATION, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHIANG, CHIEN-WEI;REEL/FRAME:031201/0054

Effective date: 20130801

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION